FR2285719A1 - Transistor a effet de champ a grille flottante isolee - Google Patents

Transistor a effet de champ a grille flottante isolee

Info

Publication number
FR2285719A1
FR2285719A1 FR7528362A FR7528362A FR2285719A1 FR 2285719 A1 FR2285719 A1 FR 2285719A1 FR 7528362 A FR7528362 A FR 7528362A FR 7528362 A FR7528362 A FR 7528362A FR 2285719 A1 FR2285719 A1 FR 2285719A1
Authority
FR
France
Prior art keywords
field effect
effect transistor
floating grid
grid field
insulated floating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7528362A
Other languages
English (en)
French (fr)
Other versions
FR2285719B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE2445079A external-priority patent/DE2445079C3/de
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2285719A1 publication Critical patent/FR2285719A1/fr
Application granted granted Critical
Publication of FR2285719B1 publication Critical patent/FR2285719B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H10D30/684—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection
    • H10D30/685—Floating-gate IGFETs having only two programming levels programmed by hot carrier injection from the channel
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0416—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a single floating gate transistor and no select transistor, e.g. UV EPROM
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Thin Film Transistor (AREA)
FR7528362A 1974-09-20 1975-09-16 Transistor a effet de champ a grille flottante isolee Granted FR2285719A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2445079A DE2445079C3 (de) 1974-09-20 1974-09-20 Speicher-Feldeffekttransistor

Publications (2)

Publication Number Publication Date
FR2285719A1 true FR2285719A1 (fr) 1976-04-16
FR2285719B1 FR2285719B1 (enrdf_load_stackoverflow) 1979-03-23

Family

ID=5926358

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7528362A Granted FR2285719A1 (fr) 1974-09-20 1975-09-16 Transistor a effet de champ a grille flottante isolee

Country Status (10)

Country Link
JP (1) JPS5528554B2 (enrdf_load_stackoverflow)
AT (1) AT376845B (enrdf_load_stackoverflow)
BE (1) BE833632A (enrdf_load_stackoverflow)
CH (1) CH591763A5 (enrdf_load_stackoverflow)
DK (1) DK141545C (enrdf_load_stackoverflow)
FR (1) FR2285719A1 (enrdf_load_stackoverflow)
GB (1) GB1483555A (enrdf_load_stackoverflow)
IT (1) IT1042654B (enrdf_load_stackoverflow)
NL (1) NL163373C (enrdf_load_stackoverflow)
SE (1) SE402186B (enrdf_load_stackoverflow)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5857750A (ja) * 1981-10-01 1983-04-06 Seiko Instr & Electronics Ltd 不揮発性半導体メモリ
JPS5887877A (ja) * 1981-11-19 1983-05-25 Sanyo Electric Co Ltd 半導体不揮発性メモリ
JPH06252392A (ja) * 1993-03-01 1994-09-09 Nec Corp 電界効果トランジスタ
KR0149571B1 (ko) * 1995-05-04 1998-10-01 김주용 반도체 소자의 트랜지스터 구조
JP2016006894A (ja) * 2015-08-03 2016-01-14 スパンション エルエルシー 半導体装置およびその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1071383A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Field-effect semiconductor devices
US3745426A (en) * 1970-06-01 1973-07-10 Rca Corp Insulated gate field-effect transistor with variable gain
US3660819A (en) * 1970-06-15 1972-05-02 Intel Corp Floating gate transistor and method for charging and discharging same
AU461729B2 (en) * 1971-01-14 1975-06-05 Rca Corporation Charge coupled circuits
NL7212151A (enrdf_load_stackoverflow) * 1972-09-07 1974-03-11

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Also Published As

Publication number Publication date
DK423275A (da) 1976-03-21
NL7510942A (nl) 1976-03-23
GB1483555A (en) 1977-08-24
JPS5157291A (enrdf_load_stackoverflow) 1976-05-19
BE833632A (fr) 1976-03-19
DK141545B (da) 1980-04-14
DK141545C (da) 1980-09-29
SE7510483L (sv) 1976-03-22
CH591763A5 (enrdf_load_stackoverflow) 1977-09-30
JPS5528554B2 (enrdf_load_stackoverflow) 1980-07-29
NL163373C (nl) 1980-08-15
ATA629275A (de) 1984-05-15
FR2285719B1 (enrdf_load_stackoverflow) 1979-03-23
AT376845B (de) 1985-01-10
IT1042654B (it) 1980-01-30
SE402186B (sv) 1978-06-19

Similar Documents

Publication Publication Date Title
BE824058A (fr) Champ operatoire
FR2293908A1 (fr) Champ operatoire
FR2293909A1 (fr) Champ operatoire
FR2284988A1 (fr) Transistor a effet de champ a grille isolee et procede de fabrication
SE7513205L (sv) Borsthallaranordning
FR2323233A1 (fr) Circuit integre a transistors a effet de champ a grille isolee
AR214387A1 (es) Un dispositivo de direccionamiento flotante
SE406136B (sv) Mis-felteffekttransistordon
SE431262B (sv) Elektrisk styranordning
FR2285719A1 (fr) Transistor a effet de champ a grille flottante isolee
NL190712C (nl) Videobandinrichting.
IT1006453B (it) Dispositivo getter perfezionato
AT326995B (de) Flotiervorrichtung
IT1043128B (it) Dispositivo semiconduttore
BE767882A (fr) Transistor a effet de champ a grille isolee
IT1044307B (it) Dispositivo semiconduttore
SE395086B (sv) Elektrisk genomforingsanordning
AT337410B (de) Luftungseinrichtung
IT1033942B (it) Dispositivo guardafilo
SE7512350L (sv) Elektisk anordning
SE408717B (sv) Galvaniseringsanordning
FR2284194A1 (fr) Transistor a effet de champ vertical
DK338975A (da) Pelenedramningsindretning
IT1049937B (it) Dispositivi elettro magnetici
BE770898A (fr) Transistor integre a effet de champ et a grille isolee

Legal Events

Date Code Title Description
ST Notification of lapse