YU93703A - Kompozicije za skidanje i čišćenje za mikroelektroniku - Google Patents
Kompozicije za skidanje i čišćenje za mikroelektronikuInfo
- Publication number
- YU93703A YU93703A YU93703A YUP93703A YU93703A YU 93703 A YU93703 A YU 93703A YU 93703 A YU93703 A YU 93703A YU P93703 A YUP93703 A YU P93703A YU 93703 A YU93703 A YU 93703A
- Authority
- YU
- Yugoslavia
- Prior art keywords
- compositions
- cleaning
- bases
- alcaline
- aliphatic
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title abstract 7
- 238000004140 cleaning Methods 0.000 title abstract 6
- 238000004377 microelectronic Methods 0.000 title abstract 3
- 239000002253 acid Substances 0.000 abstract 3
- 125000001931 aliphatic group Chemical group 0.000 abstract 2
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 abstract 1
- 150000001412 amines Chemical class 0.000 abstract 1
- 125000003277 amino group Chemical group 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 239000006184 cosolvent Substances 0.000 abstract 1
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 abstract 1
- 238000010494 dissociation reaction Methods 0.000 abstract 1
- 230000005593 dissociations Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 230000000269 nucleophilic effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
- C11D2111/10—Objects to be cleaned
- C11D2111/14—Hard surfaces
- C11D2111/22—Electronic devices, e.g. PCBs or semiconductors
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Wood Science & Technology (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Oil, Petroleum & Natural Gas (AREA)
- Life Sciences & Earth Sciences (AREA)
- Emergency Medicine (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Detergent Compositions (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Cleaning By Liquid Or Steam (AREA)
Abstract
Alkalne kompozicije za ciscenje i postupak za primenu kompozicija za ciscenje na ciscenje mikroelektronskih podloga, posebnoFDP mikroelektronskih podloga, koje su kompozicije u stanju da, u sustini, potpuno ociste takve podloge a da, u sustini, ne izazovu metalnu koroziju metalnih elemenata u tim podlogama. Alkalne kompozicije za ciscenje prema ovom pronalasku obuhvataju: (a) jedan nukleofilni amin, (b) jednu umerenu do slabu kiselinu koja ima jacinu, izrazenu kao "pKa" za konstantu disocijacije u vodenom rastvoru od oko 1,2 do oko 8, (c) jedno jedinjenje birano od jednog alifaticnog alkohola, diola, poliola ili alifaticnog glikol etra, i (d) jedan organski korastvarac koji ima parametar rastvorljivosti od oko 8 do 15. Kompozicije za ciscenje prema ovom pronalasku imace toliku kolicinu slabe kiseline da ce ekvivalentni molski odnos kiselih grupa prema aminskim grupama biti veci od 0,75, a moze se kretati do i preko odnosa jednakog 1, kao, na primer, do odnosa 1,02 ili veceg. pH alkalne kompozicije za ciscenje prema ovom pronalasku bice od oko pH 4,5 do 9,5.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US49308903P | 2003-08-06 | 2003-08-06 |
Publications (1)
Publication Number | Publication Date |
---|---|
YU93703A true YU93703A (sh) | 2006-08-17 |
Family
ID=34062161
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
YU93703A YU93703A (sh) | 2003-08-06 | 2003-11-26 | Kompozicije za skidanje i čišćenje za mikroelektroniku |
Country Status (13)
Country | Link |
---|---|
US (1) | US20050032657A1 (sh) |
EP (1) | EP1519234B1 (sh) |
JP (1) | JP3892848B2 (sh) |
KR (1) | KR100856112B1 (sh) |
CN (1) | CN1580221B (sh) |
BR (1) | BR0305409A (sh) |
CA (1) | CA2452053C (sh) |
IL (1) | IL158973A (sh) |
MY (1) | MY145450A (sh) |
NO (1) | NO20035186L (sh) |
SG (1) | SG118216A1 (sh) |
YU (1) | YU93703A (sh) |
ZA (1) | ZA200309116B (sh) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20060064441A (ko) | 2004-12-08 | 2006-06-13 | 말린크로트 베이커, 인코포레이티드 | 비수성 비부식성 마이크로전자 세정 조성물 |
DE102005041533B3 (de) * | 2005-08-31 | 2007-02-08 | Atotech Deutschland Gmbh | Lösung und Verfahren zum Entfernen von ionischen Verunreinigungen von einem Werkstück |
CN100350030C (zh) * | 2005-09-15 | 2007-11-21 | 山东大学 | 半水基液晶专用清洗剂及其制备工艺 |
KR20070052943A (ko) * | 2005-11-18 | 2007-05-23 | 주식회사 동진쎄미켐 | 포토레지스트 제거용 씬너 조성물 |
KR101152139B1 (ko) | 2005-12-06 | 2012-06-15 | 삼성전자주식회사 | 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법 |
US20070232511A1 (en) * | 2006-03-28 | 2007-10-04 | Matthew Fisher | Cleaning solutions including preservative compounds for post CMP cleaning processes |
US20080125342A1 (en) * | 2006-11-07 | 2008-05-29 | Advanced Technology Materials, Inc. | Formulations for cleaning memory device structures |
CN101177657B (zh) * | 2007-10-18 | 2010-05-26 | 珠海顺泽电子实业有限公司 | 印刷线路板的去膜液添加剂及其生产方法 |
KR101359919B1 (ko) * | 2007-11-01 | 2014-02-11 | 주식회사 동진쎄미켐 | 포토레지스트 박리 조성물, 이를 사용한 포토레지스트 박리방법 및 표시 장치의 제조 방법 |
JP4903242B2 (ja) * | 2008-10-28 | 2012-03-28 | アバントール パフォーマンス マテリアルズ, インコーポレイテッド | 多金属デバイス処理のためのグルコン酸含有フォトレジスト洗浄組成物 |
CN101735903B (zh) * | 2008-11-04 | 2012-02-01 | 江阴市润玛电子材料有限公司 | 一种太阳能光伏专用电子清洗剂 |
US8361237B2 (en) * | 2008-12-17 | 2013-01-29 | Air Products And Chemicals, Inc. | Wet clean compositions for CoWP and porous dielectrics |
KR101579846B1 (ko) * | 2008-12-24 | 2015-12-24 | 주식회사 이엔에프테크놀로지 | 포토레지스트 패턴 제거용 조성물 및 이를 이용한 금속 패턴의 형성 방법 |
KR101089211B1 (ko) * | 2010-12-02 | 2011-12-02 | 엘티씨 (주) | 1차 알칸올 아민을 포함하는 lcd 제조용 포토레지스트 박리액 조성물 |
MY172099A (en) | 2011-10-05 | 2019-11-13 | Avantor Performance Mat Llc | Microelectronic substrate cleaning compositions having copper/azole polymer inhibition |
CN103045388A (zh) * | 2012-12-06 | 2013-04-17 | 青岛海芬海洋生物科技有限公司 | 一种水晶灯清洗剂 |
CN105785725A (zh) * | 2014-12-23 | 2016-07-20 | 安集微电子(上海)有限公司 | 一种光阻残留物清洗液 |
CN105087187A (zh) * | 2015-08-30 | 2015-11-25 | 烟台顺隆化工科技有限公司 | 一种硒污染建筑废物用洗涤剂 |
KR20170111411A (ko) * | 2016-03-28 | 2017-10-12 | 동우 화인켐 주식회사 | 레지스트 박리액 조성물, 및 디스플레이 장치용 플랫 패널의 제조방법 및 그에 의해 제조된 디스플레이 장치용 플랫 패널, 및 디스플레이 장치 |
CN107526255A (zh) * | 2016-06-15 | 2017-12-29 | 东友精细化工有限公司 | 抗蚀剂剥离液组合物 |
CN115961287A (zh) * | 2022-12-28 | 2023-04-14 | 广东红日星实业有限公司 | 一种退膜剂及其制备方法和应用 |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7205265B2 (en) * | 1990-11-05 | 2007-04-17 | Ekc Technology, Inc. | Cleaning compositions and methods of use thereof |
US5308745A (en) * | 1992-11-06 | 1994-05-03 | J. T. Baker Inc. | Alkaline-containing photoresist stripping compositions producing reduced metal corrosion with cross-linked or hardened resist resins |
US5698503A (en) * | 1996-11-08 | 1997-12-16 | Ashland Inc. | Stripping and cleaning composition |
US6268323B1 (en) * | 1997-05-05 | 2001-07-31 | Arch Specialty Chemicals, Inc. | Non-corrosive stripping and cleaning composition |
JPH11282176A (ja) | 1998-03-26 | 1999-10-15 | Toray Fine Chemical Kk | フォトレジスト剥離用組成物 |
MXPA00011391A (es) * | 1998-05-18 | 2005-06-20 | Mallinckrodt Inc | Composiciones alcalinas que contienen silicato para limpiar substratos microelectronicos. |
US6319884B2 (en) * | 1998-06-16 | 2001-11-20 | International Business Machines Corporation | Method for removal of cured polyimide and other polymers |
US6413923B2 (en) * | 1999-11-15 | 2002-07-02 | Arch Specialty Chemicals, Inc. | Non-corrosive cleaning composition for removing plasma etching residues |
US6531436B1 (en) * | 2000-02-25 | 2003-03-11 | Shipley Company, L.L.C. | Polymer removal |
US6455479B1 (en) * | 2000-08-03 | 2002-09-24 | Shipley Company, L.L.C. | Stripping composition |
TW554258B (en) * | 2000-11-30 | 2003-09-21 | Tosoh Corp | Resist stripper |
TWI297102B (en) * | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
JP3797541B2 (ja) * | 2001-08-31 | 2006-07-19 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
KR100518714B1 (ko) * | 2002-02-19 | 2005-10-05 | 주식회사 덕성 | 레지스트 박리액 조성물 |
US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
KR100862988B1 (ko) * | 2002-09-30 | 2008-10-13 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
KR100511083B1 (ko) * | 2002-11-07 | 2005-08-30 | 동우 화인켐 주식회사 | 포토레지스트 및 폴리머 박리액 조성물 및 이를 이용한반도체소자의 박리, 세정방법 |
GB2401604A (en) * | 2003-05-10 | 2004-11-17 | Reckitt Benckiser Nv | Water-softening product |
-
2003
- 2003-09-24 US US10/670,141 patent/US20050032657A1/en not_active Abandoned
- 2003-11-20 IL IL158973A patent/IL158973A/en not_active IP Right Cessation
- 2003-11-21 NO NO20035186A patent/NO20035186L/no not_active Application Discontinuation
- 2003-11-24 MY MYPI20034519A patent/MY145450A/en unknown
- 2003-11-24 ZA ZA200309116A patent/ZA200309116B/xx unknown
- 2003-11-24 EP EP03257383.4A patent/EP1519234B1/en not_active Expired - Lifetime
- 2003-11-24 SG SG200307188A patent/SG118216A1/en unknown
- 2003-11-26 YU YU93703A patent/YU93703A/sh unknown
- 2003-11-28 CN CN2003101254539A patent/CN1580221B/zh not_active Expired - Lifetime
- 2003-12-04 BR BR0305409-8A patent/BR0305409A/pt not_active Application Discontinuation
- 2003-12-04 CA CA2452053A patent/CA2452053C/en not_active Expired - Fee Related
- 2003-12-17 JP JP2003419498A patent/JP3892848B2/ja not_active Expired - Fee Related
- 2003-12-19 KR KR1020030093993A patent/KR100856112B1/ko active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
CN1580221A (zh) | 2005-02-16 |
CN1580221B (zh) | 2013-09-11 |
US20050032657A1 (en) | 2005-02-10 |
EP1519234B1 (en) | 2015-04-01 |
IL158973A (en) | 2006-08-01 |
PL363900A1 (en) | 2005-02-07 |
JP3892848B2 (ja) | 2007-03-14 |
EP1519234A3 (en) | 2005-11-30 |
ZA200309116B (en) | 2004-08-27 |
JP2005055859A (ja) | 2005-03-03 |
KR20050015950A (ko) | 2005-02-21 |
EP1519234A2 (en) | 2005-03-30 |
BR0305409A (pt) | 2005-05-17 |
IL158973A0 (en) | 2004-05-12 |
SG118216A1 (en) | 2006-01-27 |
MY145450A (en) | 2012-02-15 |
CA2452053A1 (en) | 2005-02-06 |
KR100856112B1 (ko) | 2008-09-03 |
CA2452053C (en) | 2010-02-16 |
NO20035186D0 (no) | 2003-11-21 |
NO20035186L (no) | 2005-02-07 |
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