KR20050015950A - 마이크로일렉트로닉스의 박리 및 세정 조성물 - Google Patents
마이크로일렉트로닉스의 박리 및 세정 조성물Info
- Publication number
- KR20050015950A KR20050015950A KR1020030093993A KR20030093993A KR20050015950A KR 20050015950 A KR20050015950 A KR 20050015950A KR 1020030093993 A KR1020030093993 A KR 1020030093993A KR 20030093993 A KR20030093993 A KR 20030093993A KR 20050015950 A KR20050015950 A KR 20050015950A
- Authority
- KR
- South Korea
- Prior art keywords
- acid
- component
- group
- composition
- pyrrolidinone
- Prior art date
Links
- 238000004140 cleaning Methods 0.000 title claims abstract description 56
- 239000000203 mixture Substances 0.000 title claims abstract description 56
- 238000004377 microelectronic Methods 0.000 title claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000002253 acid Substances 0.000 claims abstract description 38
- 150000001412 amines Chemical class 0.000 claims abstract description 27
- 238000005260 corrosion Methods 0.000 claims abstract description 27
- 230000007797 corrosion Effects 0.000 claims abstract description 27
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 23
- 150000001875 compounds Chemical class 0.000 claims abstract description 19
- 239000006184 cosolvent Substances 0.000 claims abstract description 16
- 230000000269 nucleophilic effect Effects 0.000 claims abstract description 15
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 claims abstract description 13
- 239000007864 aqueous solution Substances 0.000 claims abstract description 10
- 150000002009 diols Chemical class 0.000 claims abstract description 9
- 229920005862 polyol Polymers 0.000 claims abstract description 7
- 150000003077 polyols Chemical class 0.000 claims abstract description 7
- 125000003277 amino group Chemical group 0.000 claims abstract description 6
- 230000002378 acidificating effect Effects 0.000 claims abstract description 5
- 238000010494 dissociation reaction Methods 0.000 claims abstract description 5
- 230000005593 dissociations Effects 0.000 claims abstract description 5
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 39
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 38
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 claims description 30
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 claims description 27
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 18
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 claims description 15
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 15
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 claims description 12
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 claims description 12
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- -1 glycol ethers Chemical class 0.000 claims description 7
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 claims description 6
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 150000002191 fatty alcohols Chemical class 0.000 claims description 6
- TVZISJTYELEYPI-UHFFFAOYSA-N hypodiphosphoric acid Chemical compound OP(O)(=O)P(O)(O)=O TVZISJTYELEYPI-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 6
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 claims description 6
- HXKKHQJGJAFBHI-UHFFFAOYSA-N 1-aminopropan-2-ol Chemical group CC(O)CN HXKKHQJGJAFBHI-UHFFFAOYSA-N 0.000 claims description 5
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 claims description 5
- DUWWHGPELOTTOE-UHFFFAOYSA-N n-(5-chloro-2,4-dimethoxyphenyl)-3-oxobutanamide Chemical compound COC1=CC(OC)=C(NC(=O)CC(C)=O)C=C1Cl DUWWHGPELOTTOE-UHFFFAOYSA-N 0.000 claims description 5
- 235000019260 propionic acid Nutrition 0.000 claims description 5
- 239000002904 solvent Substances 0.000 claims description 5
- ZFPGARUNNKGOBB-UHFFFAOYSA-N 1-Ethyl-2-pyrrolidinone Chemical compound CCN1CCCC1=O ZFPGARUNNKGOBB-UHFFFAOYSA-N 0.000 claims description 4
- 238000004090 dissolution Methods 0.000 claims description 4
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 4
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 claims description 3
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 claims description 3
- DCALJVULAGICIX-UHFFFAOYSA-N 1-propylpyrrolidin-2-one Chemical compound CCCN1CCCC1=O DCALJVULAGICIX-UHFFFAOYSA-N 0.000 claims description 3
- GIAFURWZWWWBQT-UHFFFAOYSA-N 2-(2-aminoethoxy)ethanol Chemical compound NCCOCCO GIAFURWZWWWBQT-UHFFFAOYSA-N 0.000 claims description 3
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 claims description 3
- 229910052779 Neodymium Inorganic materials 0.000 claims description 3
- 239000002202 Polyethylene glycol Substances 0.000 claims description 3
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 claims description 3
- LHIJANUOQQMGNT-UHFFFAOYSA-N aminoethylethanolamine Chemical compound NCCNCCO LHIJANUOQQMGNT-UHFFFAOYSA-N 0.000 claims description 3
- DLDJFQGPPSQZKI-UHFFFAOYSA-N but-2-yne-1,4-diol Chemical compound OCC#CCO DLDJFQGPPSQZKI-UHFFFAOYSA-N 0.000 claims description 3
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 3
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 claims description 3
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 claims description 3
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 3
- 229920001223 polyethylene glycol Polymers 0.000 claims description 3
- 229920000166 polytrimethylene carbonate Polymers 0.000 claims description 3
- HNJBEVLQSNELDL-UHFFFAOYSA-N pyrrolidin-2-one Chemical group O=C1CCCN1 HNJBEVLQSNELDL-UHFFFAOYSA-N 0.000 claims description 3
- 150000003457 sulfones Chemical class 0.000 claims description 3
- ZIBGPFATKBEMQZ-UHFFFAOYSA-N triethylene glycol Chemical compound OCCOCCOCCO ZIBGPFATKBEMQZ-UHFFFAOYSA-N 0.000 claims description 3
- WLJVXDMOQOGPHL-PPJXEINESA-N 2-phenylacetic acid Chemical compound O[14C](=O)CC1=CC=CC=C1 WLJVXDMOQOGPHL-PPJXEINESA-N 0.000 claims 4
- LCGLNKUTAGEVQW-UHFFFAOYSA-N Dimethyl ether Chemical compound COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 claims 4
- KSLKTPSTRFKAJS-UHFFFAOYSA-N 2-methoxyethanol;2-(2-methoxyethoxy)ethanol Chemical compound COCCO.COCCOCCO KSLKTPSTRFKAJS-UHFFFAOYSA-N 0.000 claims 2
- QUSNBJAOOMFDIB-UHFFFAOYSA-N Ethylamine Chemical compound CCN QUSNBJAOOMFDIB-UHFFFAOYSA-N 0.000 claims 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 claims 2
- 239000003960 organic solvent Substances 0.000 claims 2
- 125000004066 1-hydroxyethyl group Chemical group [H]OC([H])([*])C([H])([H])[H] 0.000 claims 1
- RPNUMPOLZDHAAY-UHFFFAOYSA-N Diethylenetriamine Chemical compound NCCNCCN RPNUMPOLZDHAAY-UHFFFAOYSA-N 0.000 claims 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 abstract 1
- 238000005406 washing Methods 0.000 description 26
- 239000000243 solution Substances 0.000 description 24
- 241000220259 Raphanus Species 0.000 description 14
- 235000006140 Raphanus sativus var sativus Nutrition 0.000 description 14
- 239000002585 base Substances 0.000 description 13
- 229960000583 acetic acid Drugs 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 239000010408 film Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 6
- 150000002739 metals Chemical class 0.000 description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 4
- 125000004432 carbon atom Chemical group C* 0.000 description 4
- 239000012362 glacial acetic acid Substances 0.000 description 4
- 229910052750 molybdenum Inorganic materials 0.000 description 4
- 239000011733 molybdenum Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 150000007513 acids Chemical class 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000012085 test solution Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
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- 239000011521 glass Substances 0.000 description 2
- 150000007522 mineralic acids Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009972 noncorrosive effect Effects 0.000 description 2
- LCPDWSOZIOUXRV-UHFFFAOYSA-N phenoxyacetic acid Chemical compound OC(=O)COC1=CC=CC=C1 LCPDWSOZIOUXRV-UHFFFAOYSA-N 0.000 description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 2
- 238000001226 reprecipitation Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- DGVVWUTYPXICAM-UHFFFAOYSA-N β‐Mercaptoethanol Chemical compound OCCS DGVVWUTYPXICAM-UHFFFAOYSA-N 0.000 description 2
- ORTVZLZNOYNASJ-UPHRSURJSA-N (z)-but-2-ene-1,4-diol Chemical compound OC\C=C/CO ORTVZLZNOYNASJ-UPHRSURJSA-N 0.000 description 1
- LEEANUDEDHYDTG-UHFFFAOYSA-N 1,2-dimethoxypropane Chemical compound COCC(C)OC LEEANUDEDHYDTG-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZCDDAQJNJWLCLL-UHFFFAOYSA-N 2-ethylthiolane 1,1-dioxide Chemical compound CCC1CCCS1(=O)=O ZCDDAQJNJWLCLL-UHFFFAOYSA-N 0.000 description 1
- PPDFQRAASCRJAH-UHFFFAOYSA-N 2-methylthiolane 1,1-dioxide Chemical compound CC1CCCS1(=O)=O PPDFQRAASCRJAH-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
- 150000001735 carboxylic acids Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 239000011538 cleaning material Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 239000003599 detergent Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- UWJJYHHHVWZFEP-UHFFFAOYSA-N pentane-1,1-diol Chemical compound CCCCC(O)O UWJJYHHHVWZFEP-UHFFFAOYSA-N 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000003495 polar organic solvent Substances 0.000 description 1
- ULWHHBHJGPPBCO-UHFFFAOYSA-N propane-1,1-diol Chemical compound CCC(O)O ULWHHBHJGPPBCO-UHFFFAOYSA-N 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 150000003462 sulfoxides Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 239000000725 suspension Substances 0.000 description 1
- 238000010998 test method Methods 0.000 description 1
- HWCKGOZZJDHMNC-UHFFFAOYSA-M tetraethylammonium bromide Chemical compound [Br-].CC[N+](CC)(CC)CC HWCKGOZZJDHMNC-UHFFFAOYSA-M 0.000 description 1
- NBOMNTLFRHMDEZ-UHFFFAOYSA-N thiosalicylic acid Chemical compound OC(=O)C1=CC=CC=C1S NBOMNTLFRHMDEZ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/50—Solvents
- C11D7/5004—Organic solvents
- C11D7/5013—Organic solvents containing nitrogen
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/02—Inorganic compounds
- C11D7/04—Water-soluble compounds
- C11D7/08—Acids
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/261—Alcohols; Phenols
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/263—Ethers
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/26—Organic compounds containing oxygen
- C11D7/265—Carboxylic acids or salts thereof
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3218—Alkanolamines or alkanolimines
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3263—Amides or imides
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/32—Organic compounds containing nitrogen
- C11D7/3281—Heterocyclic compounds
-
- C—CHEMISTRY; METALLURGY
- C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
- C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
- C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
- C11D7/22—Organic compounds
- C11D7/34—Organic compounds containing sulfur
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/426—Stripping or agents therefor using liquids only containing organic halogen compounds; containing organic sulfonic acids or salts thereof; containing sulfoxides
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Abstract
Description
혼합물(산의 양) | 등가 몰비산/아민 | pH 5% 용액 | 세정(3 분,70℃) | Al/Nd 부식(5% 용액,30℃) |
14.3% 초산 | 0.765 | 9.4 | 세정 | 무 |
15.1% 초산 | 0.82 | 9.29 | 세정 | 무 |
16.1% 초산 | 0.88 | 9.06 | 세정 | 무 |
17.1% 초산 | 0.94 | 8.65 | 세정 | 무 |
17.9% 초산 | 1 | 6.63 | 세정 | 무 |
18.1% 초산 | 1.02 | 6.34 | 세정 | 무 |
혼합물(부가된 산) | 등가 몰비산/아민 | pH 5% 용액 | 세정(3 분, 70℃) | Al/Nd 부식(5% 용액, 30℃) |
13.8% 하이포아인산 | 0.8 | 9.21 | 세정 | 무 |
22.5% 말론산 | 0.8 | 4.77 | 세정 | 약간 |
부가된 산 | 등가 몰비산/아민 | pH 5% 용액 | 세정(3 분,70℃) | Al/Nd 부식(5% 용액,30℃) |
프로필렌 글리콜 | 0.8 | 9.39 | 세정 | 약간 |
2-메틸-2,4-펜탄디올 | 0.8 | 9.37 | 세정 | 무 |
글리세롤 | 0.8 | 9.38 | 세정 | 무 |
2-부틴-1,4-디올 | 0.8 | 9.37 | 세정 | 미세 |
이소프로판올 | 0.8 | 6.9 | 세정 | 무 |
2-(2-부톡시에톡시)-에탄올 | 0.8 | 9.12 | 세정 | 무 |
혼합물(%NMP/%EG) | 등가 몰비산/아민 | pH 5% 용액 | 세정(3 분, 70℃) | 세정(3 분, 70℃) | Al/Nd 부식(5% 용액, 30℃) |
100%/10% | 0.765 | 9.24 | 세정 | 재침전 | 무 |
57%/43% | 0.765 | 9.4 | 세정 | 세정 | 무 |
43%/53% | 0.765 | 9.41 | 세정 | 세정 | 미세 |
0%/100% | 0.765 | 9.43 | 세정 | 재침전 | 약간 |
혼합물(부가된 산) | 등가 몰비산/아민 | pH 5% 용액 | 세정(3 분,70℃) | Al/Nd 부식(5% 용액,30℃) |
아민 없음 | 해당 없음 | 2.48 | 불완전 | 무 |
Claims (26)
- (a)친핵성 아민,(b)세기가 수용액에서 해리상수, pKa,로 표현되며 그 값이 약 1.2에서 약 8 사이인 중약산 또는 약산,(c)지방성 알콜, 디올, 폴리올, 또는 글리콜 에테르로 이루어진 그룹에서 선택된 화합물과,(d)유기 공동 용제,를 포함하여 이루어지며, 상기 약산 성분 (b)의 양은 아민그룹에 대한 산성 그룹의 등가 몰 비율이 0.75보다 크고 화합물의 pH는 약 pH4.5에서 9.5 사이가 되는마이크로일렉트로닉스 기판 세정용 조성물.
- 제 1 항에 있어서, 상기 조성물의 총중량에 대한 중량%로, 약 1% 에서 약 50% 사이의 성분 (a), 약 10% 에서 약 80% 사이의 성분 (c), 그리고 약 20% 에서 약 80% 사이의 성분 (d)를 포함하여 구성되는 조성물.
- 제 1 항에 있어서, 상기 친핵성 아민 성분은 1-아미노-2-프로판올, 2-(2-아미노에톡시)에탄올, 2-아미노에탄올, 2-(2-아미노에틸아미노)에탄올, 2-(2-아미노에틸아미노)에틸아민, 디에탄올아민, 트리에탄올아민으로 이루어진 그룹에서 선택된 적어도 하나 이상의 아민임을 특징으로 하는 조성물.
- 제 1 항에 있어서, 상기 성분 (c)는 이소프로판올, 부탄올, 에틸렌 글리콜, 디에틸렌 글리콜, 트리에틸렌 글리콜, 폴리에틸렌 글리콜, 프로필렌 글리콜, 디프로필렌 글리콜, 트리프로필렌 글리콜, 1,3-프로판디올, 2-메틸-1,3,-프로판디올, 2-부틴-1,4-디올, 2-메틸-2,4-펜탄디올, 헥산디올, 글리세롤, 에틸렌 글리콜 모노메틸 에테르 디에틸렌 글리콜 모노메틸 에테르, 프로필렌 글리콜 디메틸 에테르와, 2-(2-부톡시에톡시)-에탄올로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 조성물.
- 제 1 항에 있어서, 상기 유기 공동 용제는 용해계수가 약 8에서 15사이임을 특징으로 하는 조성물.
- 제 5 항에 있어서, 상기 공동 용제는 2-피롤리디논, 1-메틸-2-피롤리디논, 1-에틸-2-피롤리디논, 1-프로필-2-피롤리디논, 1-히드록시에틸-2-피롤리디논과, 디알킬 술폰, 디메틸 술폭사이드, 테트라히드로티오펜-1-,1-디옥사이드, 디메틸아세트아미드 및 디메틸포름아미드로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 조성물.
- 제 6 항에 있어서, 상기 용제는 술포란과 1-메틸-2-피롤리디논으로 이루어진 그룹에서 선택되고, 상기 친핵성 아민은 모노에탄올아민과 1-아미노-2-프로판올으로 이루어진 그룹에서 선택되며, 상기 성분 (c)는 에틸렌 글리콜, 프로필렌 글리콜, 2-메틸-2,4-펜탄디올, 글리세롤, 2-부틴-1,디올, 이소프로파놀과 2-(2-부톡시에톡시)에탄올로 이루어진 그룹에서 선택됨을 특징으로 하는 조성물.
- 제 1 항에 있어서, 상기 산 성분 (b)는 적어도 하나의 산의 pKa 값이 2에서 5사이임을 특징으로 하는 조성물.
- 제 7 항에 있어서, 상기 산 성분 (b)는 적어도 하나의 산의 pKa 값이 2에서 5사이임을 특징으로 하는 조성물.
- 제 1 항에 있어서, 상기 성분 (b)는 아세트산, 프로판산, 말론산, 페닐아세트산, 하이포아인산으로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 조성물.
- 제 7 항에 있어서, 상기 성분 (b)는 아세트산, 프로판산, 말론산, 페닐아세트산, 하이포아인산으로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 조성물.
- 제 1 항에 있어서, 상기 친핵성 아민은 모노에탄올아민으로 이루어지고, 유기 용제는 1-메틸-2-피롤리디논으로 이루어지며, 성분 (c)는 에틸렌 글리콜, 성분 (b)의 산은 아세트산임을 특징으로 하는 조성물.
- 마이크로일렉트로닉스 기판에 어떠한 심각한 금속 부식도 발생시키지 않는 세정 및, 금속과 포토레지스트 고분자 물질을 함유하는 기판을 위한 공정과, 기판을 세정하는 데 충분한 시간동안 세정 화합물로 이루어진 세정 조성물을 기판과 접촉시키는 것으로 이루어진 공정으로, 상기 세정 조성물은(a)친핵성 아민,(b)세기가 수용액에서 해리상수 pKa로 표현되며 그 값이 약 1.2에서 약 8 사이인 중약산 또는 약산,(c)지방성 알콜, 디올, 폴리올, 또는 글리콜 에테르로 이루어진 그룹에서 선택된 화합물과,(d)유기 공동 용제,를 포함하여 구성되며, 상기 약산 성분 (b)의 양은 아민그룹에 대한 산성 그룹의 등가 몰 비율이 0.75보다 크고 화합물의 pH는 약 pH 4.5에서 9.5 사이가 됨을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 세정 조성물은 조성물의 총중량에 대한 중량%로 1%에서 약 50%의 성분 (a) 약 10%에서 약 80%의 성분 (c) 약 20%에서 약 80%의 성분 (d)를 포함하여 구성되는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 친핵성 아민 성분은 1-아미노-2-프로판올, 2-(2-아미노에톡시)에탄올, 2-아미노에탄올, 2-(2-아미노에틸아미노)에탄올, 2-(2-아미노에틸아미노)에틸아민, 디에탄올아민, 트리에탄올아민으로 이루어진 그룹에서 선택된 적어도 하나 이상의 아민임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 성분 (c)는 이소프로판올, 부탄올, 에틸렌 글리콜, 디에틸렌 글리콜, 트리에틸렌 글리콜, 폴리에틸렌 글리콜, 프로필렌 글리콜, 디프로필렌 글리콜, 트리프로필렌 글리콜, 1,3-프로판디올, 2-메틸-1,3,-프로판디올, 2-부틴-1,4-디올, 2-메틸-2,4-펜탄디올, 헥산디올, 글리세롤, 에틸렌 글리콜 모노메틸 에테르 디에틸렌 글리콜 모노메틸 에테르, 프로필렌 글리콜 디메틸 에테르와, 2-(2-부톡시에톡시)-에탄올로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 유기 공동 용제는 용해계수가 약 8에서 15사이인 공동 용제임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 17 항에 있어서, 공동 용제는 2-피롤리디논, 1-메틸-2-피롤리디논, 1-에틸-2-피롤리디논, 1-프로필-2-피롤리디논, 1-히드록시에틸-2-피롤리디논과, 디알킬 술폰, 디메틸 술폭사이드, 테트라히드로티오펜-1-,1-디옥사이드, 디메틸아세트아미드 및 디메틸포름아미드로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 18 항에 있어서, 상기 용제는 술포란과 1-메틸-2-피롤리디논으로 이루어진 그룹에서 선택되고, 친핵성 염기는 모노에탄올아민과 1-아미노-2-프로판올으로 이루어진 그룹에서 선택되며, 성분 (c)는 에틸렌 글리콜, 프로필렌 글리콜, 2-메틸-2,4-펜탄디올, 글리세롤, 2-부틴-1,디올, 이소프로파놀과 2-(2-부톡시에톡시)에탄올로 이루어진 그룹에서 선택됨을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 산 성분 (b)는 적어도 하나의 산의 pKa 값이 2에서 5사이임을 특징으로 마이크로일렉트로닉스기판의 세정공정.
- 제 19 항에 있어서, 상기 산 성분 (b)는 적어도 하나의 산의 pKa 값이 2에서 5사이임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 성분 (b)는 아세트산, 프로판산, 말론산, 페닐아세트산, 하이포아인산으로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 19 항에 있어서, 상기 성분 (b)는 아세트산, 프로판산, 말론산, 페닐아세트산, 하이포아인산으로 이루어진 그룹에서 선택된 적어도 하나 이상의 화합물임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 친핵성 아민은 모노에탄올아민으로 이루어지고 유기 용제는 1-메틸-2-피롤리디논으로 이루어지며, 성분 (c)는 에틸렌 글리콜, 성분 (b)의 산은 아세트산임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 13 항에 있어서, 상기 마이크로일렉트로닉스 기판이 평판 디스플레이를 위한 기판임을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
- 제 25 항에 있어서, 상기 기판이 알루미늄/네오디늄 막을 가짐을 특징으로 하는 마이크로일렉트로닉스기판의 세정공정.
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US49308903P | 2003-08-06 | 2003-08-06 | |
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US10/670,141 | 2003-09-24 | ||
US10/670,141 US20050032657A1 (en) | 2003-08-06 | 2003-09-24 | Stripping and cleaning compositions for microelectronics |
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JP (1) | JP3892848B2 (ko) |
KR (1) | KR100856112B1 (ko) |
CN (1) | CN1580221B (ko) |
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CA (1) | CA2452053C (ko) |
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ZA (1) | ZA200309116B (ko) |
Cited By (2)
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TWI297102B (en) * | 2001-08-03 | 2008-05-21 | Nec Electronics Corp | Removing composition |
JP3797541B2 (ja) * | 2001-08-31 | 2006-07-19 | 東京応化工業株式会社 | ホトレジスト用剥離液 |
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US6677286B1 (en) * | 2002-07-10 | 2004-01-13 | Air Products And Chemicals, Inc. | Compositions for removing etching residue and use thereof |
KR100862988B1 (ko) * | 2002-09-30 | 2008-10-13 | 주식회사 동진쎄미켐 | 포토레지스트 리무버 조성물 |
KR100511083B1 (ko) * | 2002-11-07 | 2005-08-30 | 동우 화인켐 주식회사 | 포토레지스트 및 폴리머 박리액 조성물 및 이를 이용한반도체소자의 박리, 세정방법 |
GB2401604A (en) * | 2003-05-10 | 2004-11-17 | Reckitt Benckiser Nv | Water-softening product |
-
2003
- 2003-09-24 US US10/670,141 patent/US20050032657A1/en not_active Abandoned
- 2003-11-20 IL IL158973A patent/IL158973A/en not_active IP Right Cessation
- 2003-11-21 NO NO20035186A patent/NO20035186L/no not_active Application Discontinuation
- 2003-11-24 ZA ZA200309116A patent/ZA200309116B/xx unknown
- 2003-11-24 SG SG200307188A patent/SG118216A1/en unknown
- 2003-11-24 MY MYPI20034519A patent/MY145450A/en unknown
- 2003-11-24 EP EP03257383.4A patent/EP1519234B1/en not_active Expired - Lifetime
- 2003-11-26 YU YU93703A patent/YU93703A/sh unknown
- 2003-11-28 CN CN2003101254539A patent/CN1580221B/zh not_active Expired - Lifetime
- 2003-12-04 BR BR0305409-8A patent/BR0305409A/pt not_active Application Discontinuation
- 2003-12-04 CA CA2452053A patent/CA2452053C/en not_active Expired - Fee Related
- 2003-12-17 JP JP2003419498A patent/JP3892848B2/ja not_active Expired - Fee Related
- 2003-12-19 KR KR1020030093993A patent/KR100856112B1/ko active IP Right Grant
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7658803B2 (en) | 2005-12-06 | 2010-02-09 | Samsung Electronics Co., Ltd. | Manufacturing and cleansing of thin film transistor panels |
US8389454B2 (en) | 2005-12-06 | 2013-03-05 | Samsung Display Co., Ltd. | Manufacturing and cleansing of thin film transistor panels |
KR101359919B1 (ko) * | 2007-11-01 | 2014-02-11 | 주식회사 동진쎄미켐 | 포토레지스트 박리 조성물, 이를 사용한 포토레지스트 박리방법 및 표시 장치의 제조 방법 |
Also Published As
Publication number | Publication date |
---|---|
MY145450A (en) | 2012-02-15 |
YU93703A (sh) | 2006-08-17 |
BR0305409A (pt) | 2005-05-17 |
CN1580221A (zh) | 2005-02-16 |
US20050032657A1 (en) | 2005-02-10 |
EP1519234A3 (en) | 2005-11-30 |
NO20035186L (no) | 2005-02-07 |
IL158973A (en) | 2006-08-01 |
PL363900A1 (en) | 2005-02-07 |
JP3892848B2 (ja) | 2007-03-14 |
JP2005055859A (ja) | 2005-03-03 |
NO20035186D0 (no) | 2003-11-21 |
CA2452053C (en) | 2010-02-16 |
SG118216A1 (en) | 2006-01-27 |
ZA200309116B (en) | 2004-08-27 |
IL158973A0 (en) | 2004-05-12 |
EP1519234B1 (en) | 2015-04-01 |
CA2452053A1 (en) | 2005-02-06 |
EP1519234A2 (en) | 2005-03-30 |
CN1580221B (zh) | 2013-09-11 |
KR100856112B1 (ko) | 2008-09-03 |
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