WO2024009775A1 - Dispositif de traitement de substrat et procédé de traitement de substrat - Google Patents

Dispositif de traitement de substrat et procédé de traitement de substrat Download PDF

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Publication number
WO2024009775A1
WO2024009775A1 PCT/JP2023/022971 JP2023022971W WO2024009775A1 WO 2024009775 A1 WO2024009775 A1 WO 2024009775A1 JP 2023022971 W JP2023022971 W JP 2023022971W WO 2024009775 A1 WO2024009775 A1 WO 2024009775A1
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WIPO (PCT)
Prior art keywords
substrate
section
unit
liquid
suction
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PCT/JP2023/022971
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English (en)
Japanese (ja)
Inventor
宗久 児玉
孝彬 若松
弘 財前
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東京エレクトロン株式会社
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Publication of WO2024009775A1 publication Critical patent/WO2024009775A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/06—Work supports, e.g. adjustable steadies
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B55/00—Safety devices for grinding or polishing machines; Accessories fitted to grinding or polishing machines for keeping tools or parts of the machine in good working condition
    • B24B55/06—Dust extraction equipment on grinding or polishing machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Definitions

  • the substrate grinding system described in Patent Document 1 includes a grinding device that grinds a substrate, and a cleaning device that cleans the substrate after being ground by the grinding device.
  • the grinding device has a chuck that suctions and holds the substrate. The substrate is ground while being held by the chuck.
  • a substrate processing apparatus includes a substrate suction section that suctions a substrate, a supply section that supplies fluid to the inside of the substrate suction section, and a suction section that suctions the fluid from inside the substrate suction section. , a first transport section that holds the substrate from a side opposite to the substrate suction section, and a control section that controls the supply section, the suction section, and the first transport section.
  • the control unit is configured to control the substrate suctioned by the substrate suction unit to be held by the first transport unit from the side opposite to the substrate suction unit, and control to supply a liquid into the inside of the substrate suction unit; control to separate the substrate from the substrate adsorption unit by a set distance by moving the first transport unit a predetermined distance; and control to separate the substrate from the substrate adsorption unit by a set distance; Control is performed to suck the remaining liquid into the inside of the substrate suction section.
  • FIG. 1 is a plan view showing a substrate processing apparatus according to one embodiment.
  • FIG. 2 is a cross-sectional view taken along line II-II in FIG.
  • FIG. 3 is a flowchart illustrating a substrate processing method according to one embodiment.
  • FIG. 4 is a cross-sectional view showing a substrate holding mechanism according to one embodiment.
  • FIG. 5 is a flowchart showing an example of step S102.
  • FIG. 6(A) is a sectional view showing an example of step S204
  • FIG. 6(B) is a sectional view showing an example of step S205
  • FIG. 6(C) is a sectional view showing an example of step S207.
  • FIG. 6(D) is a sectional view showing an example of the first stage of step S208, and FIG.
  • FIG. 6(E) is a sectional view showing an example of the second stage of step S208.
  • FIG. 7 is a sectional view showing an example of a cleaning section, and is a sectional view showing an example of a state in which a substrate is held by a substrate holding section.
  • FIG. 8 is a cross-sectional view showing an example of a cleaning section, and is a cross-sectional view showing an example of a state in which a substrate is held by a pair of suction pads.
  • FIG. 9 is a sectional view showing an example of the standby section.
  • the same or corresponding configurations are denoted by the same reference numerals, and the description thereof may be omitted.
  • the X-axis direction, Y-axis direction, and Z-axis direction are directions perpendicular to each other.
  • the X-axis direction and the Y-axis direction are horizontal, and the Z-axis direction is vertical.
  • the substrate processing apparatus 1 processes a substrate W and cleans the processed substrate W.
  • the substrate processing apparatus 1 includes, for example, a loading/unloading block 2, a cleaning block 3, and a processing block 5.
  • the loading/unloading block 2, the cleaning block 3, and the processing block 5 are arranged in this order from the X-axis negative direction side to the X-axis positive direction side.
  • the loading/unloading block 2 includes a loading section 21 on which the cassette C is placed.
  • the cassette C accommodates a plurality of substrates W.
  • the substrate W includes a semiconductor substrate such as a silicon wafer or a compound semiconductor wafer.
  • the substrate W may further include a device layer formed on the surface of the semiconductor substrate.
  • the device layer includes, for example, electronic circuitry.
  • the substrate W may include a glass substrate instead of a semiconductor substrate.
  • the cleaning block 3 includes, for example, cleaning sections 31A and 31B for cleaning the substrate W after processing, etching sections 32A and 32B for etching the substrate W after cleaning, a reversing section 34 for reversing the substrate W, and a reversing section 34 for reversing the substrate W. and a transition unit 35 for relaying. Further, the cleaning block 3 includes a second transport section 36 and a third transport section 37.
  • the second transport section 36 transports the substrate W between a plurality of devices adjacent to the second transport section 36 .
  • the second transport section 36 has a transport arm that holds the substrate W.
  • the transport arm can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate about the vertical axis.
  • the third transport section 37 transports the substrate W between a plurality of devices adjacent to the third transport section 37 .
  • the third transport section 37 has a transport arm that holds the substrate W.
  • the transport arm can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate about the vertical axis.
  • the processing block 5 includes a processing section 50 that processes the substrate W.
  • the processing unit 50 grinds the substrate W, for example. Grinding includes polishing.
  • the processing section 50 includes, for example, four holding sections 52A, 52B, 52C, and 52D that hold the substrate W, and two tool drive sections 53A and 53B that drive the tool D pressed against the substrate W.
  • the tool drive units 53A and 53B rotate the tool D and move it up and down.
  • the processing section 50 may further include a rotary table 51 that is rotated about the rotation center line R1.
  • the four holding parts 52A to 52D are rotated together with the rotary table 51.
  • the four holding parts 52A to 52D are provided at intervals around the rotation center line R1 of the rotary table 51, and are rotated simultaneously about the rotation center line R1.
  • the four holding parts 52A to 52D are independently rotated about their respective rotation center lines R2.
  • the two holding parts 52A and 52C are arranged symmetrically about the rotation center line R1 of the rotary table 51.
  • Each holding unit 52A, 52C moves between a first loading/unloading position A3 where the substrate W is loaded/unloaded by the first transport unit 54 and a first processing position A1 where the substrate W is processed by one tool driving unit 53A. do.
  • the two holding parts 52A and 52C move between the first loading/unloading position A3 and the first processing position A1 every time the rotary table 51 rotates 180 degrees.
  • the nozzle 59 (see FIG. 2) supplies a processing liquid such as water to the upper surface of the substrate W during processing of the substrate W.
  • the other two holding parts 52B and 52D are arranged symmetrically about the rotation center line R1 of the rotary table 51.
  • Each holding unit 52B, 52D moves between a second loading/unloading position A0 where the substrate W is loaded/unloaded by the first transport unit 54 and a second processing position A2 where the substrate W is processed by another tool driving unit 53B. do.
  • the other two holding parts 52B and 52D move between the second loading/unloading position A0 and the second processing position A2 every time the rotary table 51 rotates 180 degrees.
  • a nozzle (not shown) supplies a processing liquid such as water to the upper surface of the substrate W during processing of the substrate W.
  • the first loading/unloading position A3, the second loading/unloading position A0, the first processing position A1, and the second processing position A2 are arranged counterclockwise in this order.
  • the holding portion 52A, the holding portion 52B, the holding portion 52C, and the holding portion 52D are arranged in this order at a pitch of 90° counterclockwise.
  • the positions of the first carry-in/out position A3 and the second carry-in/out position A0 may be reversed, and the positions of the first processing position A1 and second processing position A2 may also be reversed.
  • the first loading/unloading position A3, the second loading/unloading position A0, the first processing position A1, and the second processing position A2 are arranged in this order clockwise.
  • the holding portion 52A, the holding portion 52B, the holding portion 52C, and the holding portion 52D are arranged in this order at a pitch of 90 degrees clockwise.
  • the number of holding parts is not limited to four.
  • the number of tool drive units is also not limited to two.
  • the rotary table 51 may not be provided.
  • a slide table may be provided instead of the rotary table 51.
  • the processing block 5 includes a first transport section 54 that transports the substrate W inside the processing block 5.
  • the first transport section 54 includes a suction pad that holds the substrate W.
  • the suction pad can move in the horizontal direction (both the X-axis direction and the Y-axis direction) and the vertical direction, and can rotate about the vertical axis.
  • the processing block 5 includes standby sections 57A, 57B, and 57C (see FIG. 2) in which the substrate W is temporarily placed on standby.
  • the standby parts 57A, 57B, and 57C relay the substrates W between the first transport part 54 and the second transport part 36.
  • the standby parts 57A and 57B relay the substrate W from the second transport part 36 to the first transport part 54.
  • the standby section 57C relays the substrate W from the first transport section 54 to the second transport section 36.
  • the standby sections 57A and 57B also serve as alignment sections that adjust the center position of the substrate W.
  • the alignment section aligns the center position of the substrate W to a desired position using a guide or the like.
  • the alignment unit may detect the center position of the substrate W using an optical system or the like. Further, the alignment unit may also detect the crystal orientation of the substrate W using an optical system or the like, and specifically may also detect a notch representing the crystal orientation of the substrate W.
  • the crystal orientation of the substrate W can be aligned to a desired orientation in the rotating coordinate system that rotates together with each of the holding parts 52A to 52D.
  • the processing block 5 may include an inversion section 58 (see FIG. 2) that inverts the substrate W.
  • the reversing section 58, the standby section 57C, the standby section 57B, and the standby section 57A are stacked in this order from top to bottom. Note that the order of lamination is not particularly limited.
  • the reversing section 58 also serves as a standby section that temporarily waits the substrate W on the transport path of the substrate W from the processing section 50 to the cleaning section 31A.
  • the reversing unit 58 relays the substrate W from the first transport unit 54 to the second transport unit 36. Note that although the reversing section 58 also serves as a standby section, the reversing section 58 and the standby section may be provided separately.
  • the substrate processing apparatus 1 further includes a control section 9.
  • the control unit 9 is, for example, a computer, and includes a calculation unit 91 such as a CPU (Central Processing Unit), and a storage unit 92 such as a memory.
  • the storage unit 92 stores programs that control various processes executed in the substrate processing apparatus 1.
  • the control unit 9 controls the operation of the substrate processing apparatus 1 by causing the calculation unit 91 to execute a program stored in the storage unit 92.
  • a unit control section that controls the operation of the unit may be provided for each unit constituting the substrate processing apparatus 1, and a system control section may be provided that centrally controls a plurality of unit control sections.
  • the control section 9 may be composed of a unit control section and a system control section.
  • the substrate processing method includes steps S101 to S110 shown in FIG. 3, for example. Steps S101 to S110 are performed under the control of the control section 9. Note that the substrate processing method may not include all the steps shown in FIG. 3, or may include steps not shown in FIG. 3.
  • the third transport section 37 takes out the substrate W from the cassette C and transports it to the transition section 35.
  • the second transport section 36 takes out the substrate W from the transition section 35 and transports it to the standby section 57A.
  • the substrate W has a first main surface and a second main surface facing oppositely to each other, and is transported with the first main surface facing upward.
  • the standby unit 57A adjusts the center position of the substrate W (step S101).
  • the first transport section 54 takes out the substrate W from the standby section 57A and transports it to the holding section (for example, the holding section 52C) located at the first loading/unloading position A3.
  • the substrate W is placed on the holding portion 52C with the first main surface facing upward.
  • the center of the substrate W and the rotation center line R2 of the holding portion 52C are aligned.
  • the rotary table 51 is rotated 180 degrees, and the holding section 52C is moved from the first carry-in/out position A3 to the first processing position A1.
  • the tool driving unit 53A drives the tool D to grind the first main surface of the substrate W (step S102). Thereafter, the rotary table 51 is rotated 180 degrees, and the holding part 52C is moved from the first processing position A1 to the first loading/unloading position A3. Subsequently, the first transport section 54 takes out the substrate W from the holding section 52C located at the first loading/unloading position A3, and transports it to the reversing section 58.
  • the reversing unit 58 reverses the substrate W (step S103).
  • the substrate W is turned upside down so that the first main surface faces downward and the second main surface faces upward.
  • the second transport section 36 takes out the substrate W from the reversing section 58 and transports it to the cleaning section 31A.
  • the cleaning unit 31A cleans the first main surface of the substrate W (step S104). Particles such as processing waste can be removed by the cleaning section 31A.
  • the cleaning unit 31A scrubs and cleans the substrate W, for example.
  • the cleaning unit 31A may clean not only the first main surface of the substrate W but also the second main surface.
  • the second transport section 36 takes out the substrate W from the cleaning section 31A and transports it to the standby section 57B.
  • the standby unit 57B adjusts the center position of the substrate W (step S105).
  • the first transport section 54 takes out the substrate W from the standby section 57B and transports it to the holding section (for example, the holding section 52D) located at the second loading/unloading position A0.
  • the substrate W is placed on the holding portion 52D with the second main surface facing upward.
  • the center of the substrate W and the rotation center line R2 of the holding part 52D are aligned.
  • the rotary table 51 is rotated 180 degrees, and the holding part 52D is moved from the second loading/unloading position A0 to the second processing position A2.
  • the tool driving unit 53B drives the tool D to grind the second main surface of the substrate W (step S106).
  • the rotary table 51 is rotated 180 degrees, and the holding part 52D is moved from the second processing position A2 to the second carry-in/out position A0.
  • the first transport section 54 takes out the substrate W from the holding section 52D located at the second carry-in/out position A0, and transports it to the standby section 57C.
  • the second transport section 36 takes out the substrate W from the standby section 57C and transports it to the cleaning section 31B.
  • the cleaning unit 31B cleans the second main surface of the substrate W (step S107). Particles such as processing waste can be removed by the cleaning section 31B.
  • the cleaning unit 31B scrubs and cleans the substrate W, for example.
  • the cleaning unit 31B may clean not only the second main surface of the substrate W but also the first main surface.
  • the third transport section 37 takes out the substrate W from the cleaning section 31B and transports it to the etching section 32B.
  • the etching unit 32B etches the second main surface of the substrate W (step S108). Machining marks on the second main surface can be removed by the etching portion 32B.
  • the third transport section 37 takes out the substrate W from the etching section 32B and transports it to the reversing section 34.
  • the reversing unit 34 reverses the substrate W (step S109).
  • the substrate W is turned upside down so that the first main surface faces upward and the second main surface faces downward.
  • the third transport section 37 takes out the substrate W from the reversing section 34 and transports it to the etching section 32A.
  • the etching unit 32A etches the first main surface of the substrate W (step S110). Machining marks on the first main surface can be removed by the etched portion 32A. After drying the substrate W, the third transport section 37 takes out the substrate W from the etching section 32A and stores it in a cassette C. After that, the current process ends.
  • the substrate processing apparatus 1 may simultaneously perform a plurality of processes at a plurality of positions in order to improve throughput. For example, the substrate processing apparatus 1 simultaneously processes the substrate W at each of the first processing position A1 and the second processing position A2. During this time, the substrate processing apparatus 1 performs, for example, spray cleaning of the substrate W, measurement of the thickness distribution of the substrate W, unloading of the substrate W, and cleaning of the substrate W at the first loading/unloading position A3 and the second loading/unloading position A0. Cleaning of the suction surface (upper surface), loading of the substrate W, etc. are performed in this order.
  • the substrate processing apparatus 1 rotates the rotary table 51 by 180 degrees. Subsequently, the substrate processing apparatus 1 simultaneously processes the substrate W again at each of the first processing position A1 and the second processing position A2. During this time, the substrate processing apparatus 1 again performs spray cleaning of the substrate W, measurement of the thickness distribution of the substrate W, transport of the substrate W, and operation of the holding unit at each of the first loading/unloading position A3 and the second loading/unloading position A0. Cleaning of the substrate suction surface (upper surface), loading of the substrate W, etc. are performed in this order.
  • the processing unit 50 of this embodiment is a grinding unit that grinds the substrate W
  • the processing section 50 may be a cutting section that cuts the substrate W protected by a protection member, a cutting section that cuts the substrate W, or the like.
  • a grinding section a grindstone or the like is used as the tool D.
  • a cutting section a blade or the like is used as the tool D.
  • an end mill or the like is used as the tool D.
  • the substrate holding mechanism 60 is used in the processing section 50.
  • the substrate holding mechanism 60 includes, for example, a substrate suction section 61, a suction section 62, and a supply section 63.
  • the substrate suction unit 61 suctions the substrate W.
  • the substrate suction unit 61 is, for example, a vacuum chuck, and includes a porous body 611 that vacuum suctions the substrate W, and a holding table 612 that holds the porous body 611.
  • the porous body 611 has an adsorption surface that adsorbs the substrate W.
  • the substrate adsorption section 61 is used, for example, as the holding sections 52A to 52D shown in FIG. 1, although it is not particularly limited.
  • the suction unit 62 sucks fluid from inside the substrate suction unit 61.
  • the suction unit 62 includes a valve that switches between suctioning and stopping fluid suction under the control of the control unit 9 .
  • the valve is connected to a source of fluid suction.
  • the suction unit 62 does not include a suction source, but may include a suction source.
  • a valve may be provided for each type of fluid, or a common valve may be provided.
  • the suction unit 62 sucks gas from inside the porous body 611, for example. As a result, the pressure of the porous body 611 is reduced to lower than atmospheric pressure, and the porous body 611 vacuum-adsorbs the substrate W. Thereafter, when the suction unit 62 stops sucking gas and the pressure of the porous body 611 returns to atmospheric pressure, the vacuum suction force disappears.
  • the substrate suction unit 61 is not limited to a vacuum chuck, and may be, for example, an electrostatic chuck.
  • the electrostatic chuck has an insulating substrate and electrodes (not shown).
  • An electrostatic adsorption force is generated by a charge supply unit (not shown) supplying charges to the electrodes.
  • the electrostatic adsorption force disappears as a charge discharging section (not shown) discharges the charge from the electrode.
  • the substrate W When processing the substrate W, the substrate W is sucked by the substrate suction unit 61.
  • a processing liquid such as water is supplied to the substrate W for purposes such as reducing frictional resistance, cooling, and preventing adhesion of processing debris.
  • the processing liquid enters between the substrate suction part 61 and the substrate W.
  • the supply section 63 supplies the liquid L into the substrate adsorption section 61 to remove the substrate W, and presses the substrate W with the pressure of the liquid L (FIGS. 6(B) and 6(C)). )reference).
  • the liquid L is, for example, water.
  • the supply unit 63 may supply a mixed fluid of liquid L and gas into the substrate adsorption unit 61, or may push the substrate W with the pressure of the mixed fluid.
  • the gas is, for example, air.
  • the supply unit 63 pushes the substrate W with the pressure of the liquid L, for example, by supplying the liquid L into the inside of the porous body 611.
  • the substrate suction unit 61 is an electrostatic chuck
  • a plurality of holes may be formed in the suction surface of the electrostatic chuck, and the supply unit 63 may supply the liquid L to the holes.
  • the pressure of the liquid L can push the substrate W.
  • the substrate W is peeled off from the substrate suction unit 61 by the pressure of the liquid L and transferred from the substrate suction unit 61 to the first transport unit 54. Utilizing the pressure of the liquid L is particularly effective when grinding the substrate W.
  • the tool D presses the substrate W against the substrate suction part 61. This is because, as a result, the substrate W comes into close contact with the substrate adsorption section 61.
  • the suction unit 62 sucks the liquid L remaining between the substrate suction unit 61 and the substrate W into the inside of the substrate suction unit 61 (see FIGS. 6(D) and 6(E)). Thereby, after the substrate W is pushed by the pressure of the liquid L in order to remove the substrate W from the substrate suction part 61, the amount of the liquid L remaining on the substrate W can be reduced. It is possible to suppress the liquid L from scattering inside the substrate processing apparatus 1 due to subsequent transportation of the substrate W.
  • the suction unit 62 In order to reduce the amount of liquid L remaining on the substrate W, it is also possible to use a sponge roller or the like instead of the suction unit 62.
  • the sponge roller is provided next to the substrate suction unit 61, and removes the liquid L remaining on the substrate W during the transport path of the substrate W. According to this embodiment, since the liquid L is removed from the substrate W above the substrate suction unit 61, there is no need to secure a dedicated space in the middle of the transport path of the substrate W. Furthermore, according to this embodiment, it is possible to save the effort of cleaning the sponge roller.
  • step S102 in FIG. 3 will be described with reference to FIGS. 5 and 6.
  • Step S106 in FIG. 3 is performed in the same manner as step S102, so the explanation will be omitted.
  • step S102 includes steps S201 to S209, for example. Steps S201 to S209 are performed under the control of the control section 9.
  • the first transport section 54 carries the substrate W into the processing section 50 (step S201). Subsequently, the substrate suction section 61 in the processing section 50 suctions the substrate W (step S202). Thereafter, the first conveyance section 54 exits the processing section 50. With the substrate suction unit 61 suctioning the substrate W, the processing unit 50 processes the substrate W (step S203).
  • the first transport section 54 enters the processing section 50 and is placed on the substrate W as shown in FIG. 6(A). After that, the first transport section 54 holds the substrate W from the side opposite to the substrate suction section 61 (for example, from the upper side) (step S204).
  • the first transport section 54 includes a suction pad 54a that suctions the substrate W, for example.
  • the suction pad 54a only needs to suction the center portion of the upper surface of the substrate W, and does not need to suction the outer peripheral portion of the upper surface of the substrate W.
  • the substrate suction section 61 suctions the substrate W so that the substrate W does not shift when the first transport section 54 suctions the substrate W. Both the substrate suction section 61 and the first transport section 54 suction the substrate W. Thereafter, the suction section 62 stops sucking the gas, and the substrate suction section 61 stops suctioning the substrate W. Then, only the first transport section 54 attracts the substrate W. Note that the first transport section 54 may hold the substrate W with a mechanical chuck instead of the suction pad 54a.
  • the supply unit 63 supplies the liquid L to the inside of the substrate suction unit 61, and pushes the substrate W upward with the pressure of the liquid L (step S205).
  • the first transport section 54 presses the substrate W from the side opposite to the substrate suction section 61 to prevent the substrate W from being blown away.
  • the liquid L leaks out laterally from between the substrate suction part 61 and the substrate W.
  • control unit 9 determines whether the substrate W is held in the first transport unit 54 (step S206). For example, when the first transport unit 54 vacuum-chucks the substrate W, the pressure sensor 82 detects the pressure representing the vacuum suction force. The control unit 9 makes the determination based on the detected value of the pressure sensor 82. If the substrate W is vacuum-adsorbed by the first transfer unit 54 and there is no vacuum leak, the pressure will be below the threshold value.
  • step S206 if it is determined in step S206 that the substrate W is not held in the first transport unit 54, the processes from step S204 onward are performed again, for example. Alternatively, the processing of the substrate W may be interrupted and maintenance of the substrate processing apparatus 1 may be performed.
  • step S206 If it is determined in step S206 that the substrate W is held by the first transport section 54, the first transport section 54 is raised as shown in FIG. 6(C). As a result, the substrate W is separated from the substrate adsorption section 61 (step S207). A gap is formed between the substrate adsorption section 61 and the substrate W. The size of the gap is equal to the amount of rise of the substrate W. The larger the amount of rise of the substrate W is, the larger the gap is.
  • step S208 the substrate W is raised by a set distance D0, and the substrate W is separated from the substrate suction unit 61 by a set distance D0.
  • the space between the substrate W and the substrate adsorption section 61 is filled with a film of the liquid L.
  • the set distance D0 is determined in consideration of the suction time of the liquid L in step S208 and the like. The larger the set distance D0 is, the larger the remaining amount of liquid L is, the longer the liquid L suction time becomes, and the throughput decreases. However, if the set distance D0 is too small, there is a risk that the substrate W may come into contact with the substrate suction section 61 due to the suction force.
  • the suction unit 62 sucks the liquid L remaining between the substrate suction unit 61 and the substrate W into the inside of the substrate suction unit 61. Thereby, the amount of liquid L remaining on the substrate W can be reduced. Splashing of the liquid L due to subsequent transportation of the substrate W can be suppressed, and the inside of the substrate processing apparatus 1 can be kept clean. As shown in FIG. 6E, a small amount of liquid L may remain on the substrate W.
  • the first transport section 54 moves in the horizontal direction while holding the substrate W, exits the processing section 50, and carries out the substrate W from the processing section 50 (step S209).
  • the cleaning step includes rotating the substrate suction unit 61 while supplying the liquid L to the inside of the substrate suction unit 61.
  • a cleaning step is performed after the substrate W is separated from the substrate suction unit 61 so that the substrate suction unit 61 and the substrate W do not rub against each other by rotating the substrate suction unit 61. Therefore, the cleaning step is performed after the start of step S207.
  • the liquid L may be supplied to the inside of the substrate suction section 61, or a mixed fluid of liquid L and gas may be supplied to the inside of the substrate suction section 61.
  • the size of the gap formed between the substrate suction unit 61 and the substrate W in the cleaning step may be larger, smaller, or the same as the size D0 of the gap formed in step S208. But that's fine.
  • the cleaning step includes rotating the substrate suction unit 61 while supplying the liquid L to the inside of the substrate suction unit 61.
  • the liquid L flows from the inside in the radial direction of the substrate W to the outside in the radial direction due to centrifugal force while contacting both the substrate suction part 61 and the substrate W.
  • step S208 is performed.
  • the substrate suction unit 61 may be rotated, but it is preferable that the substrate suction unit 61 is not rotated. In the latter case, generation of centrifugal force can be prevented. If centrifugal force is not generated, the liquid L is likely to be drawn from the radially outer side to the radially inner side of the substrate W while contacting both the substrate W and the substrate suction part 61.
  • the cleaning section 31B includes, for example, a substrate holding section 311 that holds the substrate W, a rotation mechanism 312 that rotates the substrate holding section 311, a ring cover 314 that surrounds the periphery of the substrate W, and a friction section 315 that contacts the substrate W. , a moving part 316 that moves the friction part 315, a lower nozzle 317 that supplies cleaning liquid to the lower surface of the substrate W, and an upper nozzle 318 that supplies the cleaning liquid to the upper surface of the substrate W.
  • the substrate holding unit 311 holds the substrate W horizontally from below, for example.
  • the substrate holding unit 311 attracts the first region of the substrate W.
  • the first region is, for example, the center of the lower surface of the substrate W.
  • the rotation mechanism 312 rotates the substrate W by rotating the substrate holding part 311.
  • the ring cover 314 suppresses the scattering of the cleaning liquid shaken off from the rotating substrate W.
  • a pair of suction pads 313 (only one is shown in FIGS. 7 and 8) are provided inside the ring cover 314, sandwiching the substrate holding part 311 in the Y-axis direction.
  • the pair of suction pads 313 and the ring cover 314 are integrated, and are movable in the X-axis direction and the Z-axis direction simultaneously, for example, but are immovable in the Y-axis direction.
  • the friction part 315 contacts the lower surface of the substrate W, for example, and rubs the lower surface of the substrate W.
  • the friction part 315 is a brush or a sponge.
  • the friction section 315 is rotated by a motor 319 and moved in the Y-axis direction by a moving section 316 .
  • the rotation mechanism 312 rotates the substrate W, and the moving section 316 moves the friction section 315 in the Y-axis direction. let As a result, the area outside the first area on the lower surface of the substrate W is scrub-cleaned.
  • a drive unit moves the pair of suction pads 313 and the ring cover 314 in the X-axis direction, and the moving unit 316 The friction portion 315 is moved in the Y-axis direction. As a result, the first region of the lower surface of the substrate W is scrub-cleaned.
  • the substrate holding section 311 and the pair of suction pads 313 sequentially hold the substrate W, so that the friction section 315 can scrub the entire lower surface of the substrate W.
  • the friction part 315 is arranged below the substrate W in this embodiment, it may be arranged above the substrate W, and the upper surface of the substrate W may be scrubbed.
  • the friction portions 315 may be arranged on both the upper and lower sides of the substrate W.
  • the substrate W is transported from the processing section 50 to the cleaning sections 31A and 31B in a wet state with the liquid supplied by the processing section 50.
  • the reason why the substrate W is transported while wet with liquid is that if the substrate W dries before cleaning, processing debris will firmly adhere to the substrate W, making it difficult to remove the processing debris by cleaning. Because it will be.
  • the liquid contaminated with processing waste is brought into the cleaning parts 31A, 31B.
  • the liquid contaminated with processing waste adheres to the substrate holding parts 311 of the cleaning parts 31A and 31B, thereby staining the substrate holding parts 311. Thereafter, the substrate W held by the substrate holder 311 is adversely affected.
  • the standby section 57C includes a liquid removal section 70 that removes the liquid from the first region of the substrate W. As described above, the standby section 57C temporarily waits the substrate W wet with the liquid supplied in the processing section 50 in the middle of the substrate W transport path from the processing section 50 to the cleaning section 31B. be.
  • the standby section 57C includes, for example, a plurality of support pins 571 that support the outer periphery of the substrate W, and a horizontal plate 572 on which the support pins 571 are erected.
  • the plurality of support pins 571 support the substrate W horizontally.
  • a gap is formed between the substrate W and the horizontal plate 572, and at least a portion of the liquid removal section 70 is disposed in the gap.
  • the liquid removal unit 70 dries the first region of the substrate W.
  • the first region of the substrate W is a region with which the substrate holding section 311 of the cleaning section 31B comes into contact.
  • By drying the first region of the substrate W it is possible to suppress the liquid contaminated with processing waste from adhering to the substrate holding part 311 of the cleaning part 31B, and it is possible to suppress the substrate holding part 311 from becoming dirty. Therefore, the cleaning section 31B can be kept clean.
  • the first region of the substrate W is, for example, the center of the bottom surface of the substrate W. Since the center of the lower surface of the substrate W is an area where hardly any processing debris accumulates compared to not only the upper surface of the substrate W but also the outer periphery of the lower surface of the substrate W, there is no problem even if it is dried before cleaning. Note that since the upper surface of the substrate W is processed, processing debris tends to accumulate thereon, and processing debris that has come around from the upper surface of the substrate W can accumulate on the outer periphery of the lower surface of the substrate W.
  • the liquid removal unit 70 only needs to remove the liquid from a part of the substrate W, and does not need to remove the liquid from the entire substrate W.
  • the liquid removal unit 70 only needs to remove the liquid from the center of the lower surface of the substrate W, and does not need to remove the liquid from the outer periphery of the lower surface of the substrate W. Thereby, processing debris can be prevented from firmly adhering to the substrate W before cleaning, and processing debris can be easily removed by cleaning.
  • the liquid removal section 70 includes, for example, a gas discharge section 71 that discharges gas toward the first region of the substrate W. By adjusting the gas discharge direction, gas discharge flow rate, etc., the area where the gas hits the substrate W can be adjusted, and the area of the substrate W from which liquid is removed can be adjusted.
  • the gas discharge section 71 includes a nozzle 711 that discharges gas.
  • the nozzle 711 is erected vertically, for example, and discharges gas directly upward.
  • the discharged gas is, for example, air.
  • the gas to be discharged may be any dry gas, and may be an inert gas such as nitrogen gas. Although the number of nozzles 711 is one in this embodiment, it may be plural.
  • the gas discharged from the nozzle 711 hits the center of the lower surface of the substrate W, it flows radially along the lower surface of the substrate W, gradually decelerating, and gradually reaching atmospheric pressure.
  • the Bernoulli effect operates in the gap between the nozzle 711 and the substrate W, a negative pressure is generated at the center of the lower surface of the substrate W, and the substrate W is sucked by the negative pressure. Therefore, the substrate W is stably supported.
  • the gas discharge section 71 may discharge a cleaning liquid such as water before discharging the gas.
  • the cleaning liquid and gas are discharged through the same nozzle 711.
  • the first region of the substrate W can be cleaned with a cleaning liquid before drying with the gas. Therefore, it is possible to further suppress processing debris from adhering to the substrate holding section 311 of the cleaning section 31B.
  • the liquid removal unit 70 has a supply line 73 that supplies gas and cleaning liquid to the nozzle 711.
  • the supply line 73 has a common line 731 and a plurality of branch lines 732 and 733.
  • a common line 731 connects the nozzle 711 and the plurality of branch lines 732 and 733. Note that the supply line 73 may supply only gas to the nozzle 711.
  • a branch line 732 connects the common line 731 and the gas supply source 74.
  • An on-off valve 75 is provided in the middle of the branch line 732. When the on-off valve 75 opens the flow path of the branch line 732, the nozzle 711 discharges gas. When the on-off valve 75 closes the flow path of the branch line 732, the nozzle 711 stops discharging gas.
  • a branch line 733 connects the common line 731 and the cleaning liquid supply source 76.
  • An on-off valve 77 is provided in the middle of the branch line 733. When the on-off valve 77 opens the flow path of the branch line 733, the nozzle 711 discharges the cleaning liquid. When the on-off valve 77 closes the flow path of the branch line 733, the nozzle 711 stops discharging the cleaning liquid.
  • the liquid removal unit 70 may include an air volume amplification unit 72 that amplifies the air volume hitting the substrate W by drawing gas around the gas discharge unit 71 into the flow of gas discharged from the gas discharge unit 71 using the Coanda effect. .
  • an air volume amplification unit 72 that amplifies the air volume hitting the substrate W by drawing gas around the gas discharge unit 71 into the flow of gas discharged from the gas discharge unit 71 using the Coanda effect.
  • the air volume amplification section 72 has, for example, an annular section 721 that surrounds the entire circumference of the gas discharge section 71.
  • the annular portion 721 allows gas to be taken in from the entire periphery of the gas discharge portion 71 .
  • the annular portion 721 preferably has an annular shape. Gas can be evenly taken in from the entire surrounding area around the gas discharge part 71. Note that the annular portion 721 may have a rectangular ring shape.
  • the gas discharge part 71 may protrude more toward the substrate W than the air volume amplification part 72, and may protrude above the air volume amplification part 72, for example.
  • the nozzle 711 of the gas discharge section 71 may protrude further toward the substrate W than the annular portion 721 of the air volume amplifying section 72, and may protrude upward than the annular portion 721, for example.
  • the nozzle 711 protrudes more toward the substrate W than the annular portion 721, the gas discharged from the nozzle 711 easily passes between the annular portion 721 and the substrate W. Therefore, the flow rate of the gas that spreads radially along the lower surface of the substrate W can be increased. A wide area of the substrate W can be dried with a small discharge flow rate of gas. Furthermore, floating of the substrate W due to gas discharge can be suppressed.
  • the air volume amplification section 72 has an intake port 722 between the annular section 721 and the horizontal plate 572 to take in the surrounding gas.
  • the area of the intake port 722 is, for example, equal to the product of the height of the gap between the annular portion 721 and the horizontal plate 572 and the outer circumference length of the annular portion 721.
  • the air volume amplifying section 72 has an air outlet 723 on the surface of the annular section 721 facing the substrate W that blows out gas toward the substrate W.
  • the area of the air outlet 723 is, for example, the area of an opening formed in the surface of the annular portion 721 that faces the substrate W.
  • the area of the intake port 722 may be larger than the area of the air outlet 723. Thereby, a large amount of gas can be taken in from around the air volume amplifying section 72, and the amount of air hitting the substrate W can be further amplified.
  • the annular portion 721 may have a tapered surface 724 at the air outlet 723 that widens toward the substrate W (for example, upward).
  • the gas flow can be smoothly bent along the tapered surface 724, suppressing the generation of vortices and suppressing gas stagnation.
  • the annular portion 721 has an opening 725 on a surface opposite to the surface facing the substrate W (for example, the bottom surface).
  • the annular portion 721 may have a tapered surface (not shown) in the opening 725 that widens toward the side opposite to the substrate W (for example, toward the bottom).
  • the liquid removing section 70 is provided in a waiting section 57C that temporarily waits the substrate W in the middle of the transport path of the substrate W from the processing section 50 to the cleaning section 31B. It may be provided in a standby section (for example, the reversing section 58) that temporarily waits the substrate W on the transport path of the substrate W to the section 31A. Note that, as described above, the reversing section 58 and the standby section may be provided separately.
  • the liquid removal unit 70 removes the liquid L adhering to the substrate W in the standby unit. This not only prevents the liquid L from scattering into the interior of the substrate processing apparatus 1, but also prevents the substrate holding parts 311 of the cleaning parts 31A and 31B from getting dirty.
  • Control section 54 First transport section 61
  • Suction section 63 Supply section L Liquid W Substrate

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

L'invention concerne un dispositif de traitement de substrat comprenant : une unité de serrage de substrat qui serre un substrat ; une unité d'alimentation qui fournit un fluide à l'intérieur de l'unité de serrage de substrat ; une unité d'aspiration qui aspire le fluide depuis l'intérieur de l'unité de serrage de substrat ; une première unité de transport qui maintient le substrat à partir du côté opposé à l'unité de serrage de substrat ; et une unité de commande qui commande l'unité d'alimentation, l'unité d'aspiration et la première unité de transport. L'unité de commande effectue : une commande pour maintenir le substrat qui est serré par l'unité de serrage de substrat avec la première unité de transport à partir du côté opposé à l'unité de serrage de substrat ; une commande pour déplacer la première unité de transport d'une distance définie de façon à séparer le substrat de l'unité de serrage de substrat par la distance définie ; et une commande pour aspirer, vers l'intérieur de l'unité de serrage de substrat, le liquide qui reste entre l'unité de serrage de substrat et le substrat, dans un état dans lequel le substrat est séparé de l'unité de serrage de substrat par la distance définie.
PCT/JP2023/022971 2022-07-04 2023-06-21 Dispositif de traitement de substrat et procédé de traitement de substrat WO2024009775A1 (fr)

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JP2022-108009 2022-07-04

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267540A (ja) * 1991-02-22 1992-09-24 Shibayama Kikai Kk チャック機構における半導体ウエハの取外し方法
JP2009253244A (ja) * 2008-04-11 2009-10-29 Disco Abrasive Syst Ltd ウエーハの搬出方法
JP2011091246A (ja) * 2009-10-23 2011-05-06 Disco Abrasive Syst Ltd 板状ワーク着脱方法及び加工装置
JP2015115574A (ja) * 2013-12-16 2015-06-22 株式会社東京精密 ウェーハ搬送システム
JP2016127195A (ja) * 2015-01-07 2016-07-11 株式会社ディスコ ウエーハの研削方法
JP2016221668A (ja) * 2015-06-01 2016-12-28 株式会社荏原製作所 処理対象物を保持するためのテーブルおよび該テーブルを有する処理装置
JP2019055436A (ja) * 2017-09-20 2019-04-11 株式会社ディスコ 被加工物保持装置及び被加工物脱着方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04267540A (ja) * 1991-02-22 1992-09-24 Shibayama Kikai Kk チャック機構における半導体ウエハの取外し方法
JP2009253244A (ja) * 2008-04-11 2009-10-29 Disco Abrasive Syst Ltd ウエーハの搬出方法
JP2011091246A (ja) * 2009-10-23 2011-05-06 Disco Abrasive Syst Ltd 板状ワーク着脱方法及び加工装置
JP2015115574A (ja) * 2013-12-16 2015-06-22 株式会社東京精密 ウェーハ搬送システム
JP2016127195A (ja) * 2015-01-07 2016-07-11 株式会社ディスコ ウエーハの研削方法
JP2016221668A (ja) * 2015-06-01 2016-12-28 株式会社荏原製作所 処理対象物を保持するためのテーブルおよび該テーブルを有する処理装置
JP2019055436A (ja) * 2017-09-20 2019-04-11 株式会社ディスコ 被加工物保持装置及び被加工物脱着方法

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