WO2023282210A1 - 露光装置、露光方法およびフラットパネルディスプレイの製造方法、ならびに露光データ作成方法 - Google Patents

露光装置、露光方法およびフラットパネルディスプレイの製造方法、ならびに露光データ作成方法 Download PDF

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WO2023282210A1
WO2023282210A1 PCT/JP2022/026496 JP2022026496W WO2023282210A1 WO 2023282210 A1 WO2023282210 A1 WO 2023282210A1 JP 2022026496 W JP2022026496 W JP 2022026496W WO 2023282210 A1 WO2023282210 A1 WO 2023282210A1
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Prior art keywords
exposure
light
optical system
exposure target
projection optical
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PCT/JP2022/026496
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English (en)
French (fr)
Japanese (ja)
Inventor
正紀 加藤
仁 水野
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株式会社ニコン
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Priority to JP2023533108A priority Critical patent/JPWO2023282210A1/ja
Priority to KR1020247000251A priority patent/KR20240017069A/ko
Priority to CN202280047260.7A priority patent/CN117597632A/zh
Publication of WO2023282210A1 publication Critical patent/WO2023282210A1/ja

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B26/00—Optical devices or arrangements for the control of light using movable or deformable optical elements
    • G02B26/08—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light
    • G02B26/0816—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements
    • G02B26/0833—Optical devices or arrangements for the control of light using movable or deformable optical elements for controlling the direction of light by means of one or more reflecting elements the reflecting element being a micromechanical device, e.g. a MEMS mirror, DMD
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70358—Scanning exposure, i.e. relative movement of patterned beam and workpiece during imaging
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display

Definitions

  • the present invention relates to an exposure apparatus, an exposure method, a flat panel display manufacturing method, and an exposure data creation method.
  • This application claims priority based on Japanese Patent Application No. 2021-111848 filed on July 5, 2021, the content of which is incorporated herein.
  • an exposure apparatus that irradiates a substrate with illumination light through an optical system
  • light modulated by a spatial light modulator is passed through a projection optical system, and an image of this light is projected onto a resist coated on the substrate.
  • An exposure apparatus that forms an image and performs exposure is known (see, for example, Patent Document 1).
  • a plurality of spatial light modulators having a plurality of elements, an illumination optical system for illuminating the plurality of spatial light modulators with pulsed light, and light emitted from the spatial light modulators a stage on which the exposure target is placed; a first state in which the plurality of elements guide the pulsed light to the projection optical system; and a control unit for switching to a second state in which the stage is not guided to the optical system, wherein the stage moves the exposure target in a predetermined scanning direction while overlapping the scanning exposure field by the plurality of the projection optical systems.
  • the light irradiated onto the exposure object scans the exposure object, and the control unit switches the plurality of elements between the first state and the second state in the exposure, and
  • the number of the pulsed light beams irradiated via the projection optical system onto the overlapping portion where exposure is performed in an overlapped manner is such that the projection optical system is applied to the non-overlap portion where exposure is performed without overlapping on the exposure object.
  • An exposure apparatus is provided that controls the plurality of elements to be greater than the number of the pulsed lights irradiated through the exposure apparatus.
  • a method of exposing an object to be exposed using the above-described exposure apparatus wherein the stage overlaps the scanning exposure field by a plurality of the projection optical systems, and the exposure is performed.
  • the light irradiating the object to be exposed scans the object to be exposed.
  • the number of the pulsed lights irradiated via the projection optical system to the overlapping portion exposed on the exposure target is changed to the non-overlap exposure target on the exposure target without overlap.
  • An exposure method is provided in which the plurality of elements are controlled so that the number of the pulsed lights irradiated onto the wrap portion via the projection optical system is greater than the number of the pulsed lights.
  • a method of manufacturing a flat panel display including exposing an exposure target by the exposure method described above and developing the exposed exposure target.
  • a plurality of spatial light modulators having a plurality of elements, an illumination optical system for illuminating the plurality of spatial light modulators with pulsed light, and light emitted from the spatial light modulators a stage on which the exposure target is placed; a first state in which the plurality of elements guide the pulsed light to the projection optical system; and a control unit for switching to a second state in which the stage is not guided to the optical system, wherein the stage moves the exposure target in a predetermined scanning direction while overlapping the scanning exposure field by the plurality of the projection optical systems.
  • an exposure data creation method for creating exposure data for controlling the plurality of elements so that the number of the pulsed lights irradiated through the device is larger than the number of the pulsed lights.
  • FIG. 1 is a diagram showing an overview of an external configuration of an exposure apparatus according to a first embodiment
  • FIG. 3 is a diagram showing an overview of the configurations of an illumination module and a projection module
  • It is a figure which shows the outline
  • 4 is a diagram showing an overview of the configuration of an optical modulation section
  • FIG. 4 is a diagram showing the outline of the configuration of the light modulating section, and showing the ON state of the mirror in the center of the paper.
  • FIG. 4 is a diagram showing the outline of the configuration of the light modulating section, and showing the OFF state of the mirror in the center of the paper.
  • (A) shows the exposure fields of two projection modules
  • (B) is a diagram showing an exposure region formed on an exposure target.
  • FIG. 10 is a diagram schematically showing an arrangement example of rectangular projection areas of spatial light modulators projected onto a substrate of an exposure apparatus according to a second embodiment;
  • FIG. 10 is a diagram showing a state of joint exposure (normal exposure mode) using only two projection areas in FIG. 9;
  • FIG. 10 is a diagram schematically showing an arrangement example of rectangular projection areas of spatial light modulators projected onto a substrate of an exposure apparatus according to a second embodiment;
  • FIG. 10 is a diagram showing a state of joint exposure (normal exposure mode) using only two projection areas in FIG. 9;
  • FIG. 10 is a diagram showing a state of joint exposure (normal exposure mode) using only two projection areas in FIG. 9;
  • FIG. 10 is a diagram schematically showing an example of a special exposure mode for a negative resist
  • FIG. 11 is a diagram showing an example of distribution in the Y direction of the cumulative number of ON-state mirrors that are exposed in the spliced region in a modified example
  • (A) is a diagram showing an example of distribution in normal exposure mode
  • (B) is a diagram showing an example of distribution in special exposure mode.
  • (A) is a diagram showing an exposure region formed on an exposure target when the exposure target is exposed according to the third embodiment.
  • (B) is a diagram showing an exposure region formed on an exposure target.
  • C is a graph showing the integrated number of pulses by scanning exposure. It is a figure which shows typically an example of the exposure mode of the exposure apparatus which concerns on 4th Embodiment.
  • FIG. 1 is a diagram showing an overview of the external configuration of an exposure apparatus 1 according to the first embodiment.
  • the exposure apparatus 1 is an apparatus that irradiates an exposure target with modulated light.
  • the exposure apparatus 1 is a step-and-scan projection exposure apparatus that exposes rectangular glass substrates used in electronic devices such as liquid crystal displays (flat panel displays). is a so-called scanner.
  • the glass substrate, which is the object to be exposed may have at least one side length or diagonal length of 500 mm or more.
  • the glass substrate, which is the object to be exposed may be a substrate for a flat panel display.
  • An exposure target (for example, a substrate for a flat panel display) exposed by the exposure apparatus 1 is developed and provided as a product.
  • a resist eg, negative resist
  • the apparatus main body of the exposure apparatus 1 is configured similarly to the apparatus main body disclosed in US Patent Application Publication No. 2008/0030702, for example.
  • the exposure apparatus 1 includes a base 11, an anti-vibration table 12, a main column 13, a stage 14, an optical surface plate 15, an illumination module 16, a projection module 17 (projection optical system), a light source unit 18, an optical fiber 19, and an optical modulator 20. (not shown in FIG. 1) and a control unit 21 .
  • the direction parallel to the optical axis direction of the projection module 17 that irradiates the light modulated by the light modulation section 20 onto the exposure object is defined as the Z-axis direction
  • the direction of a predetermined plane orthogonal to the Z-axis is defined as the X-axis direction
  • the X-axis direction and the Y-axis direction are directions orthogonal (intersecting) each other.
  • the X-axis direction is the scanning movement direction of the exposure object (substrate) 23 and the Y-axis direction is the stepping direction of the exposure object (substrate) 23 .
  • the base 11 is the base of the exposure apparatus 1 and is installed on the anti-vibration table 12 .
  • the base 11 supports a stage 14 on which an object to be exposed is placed so as to be movable in the X-axis direction and the Y-axis direction.
  • the stage 14 supports the exposure target.
  • the stage 14 is for positioning the exposure object with high precision with respect to a plurality of partial images of the circuit pattern projected via the projection module 17 in scanning exposure.
  • the stage 14 drives the object to be exposed in directions of six degrees of freedom (the above-described X-, Y-, and Z-axis directions and rotational directions about the respective axes).
  • the stage 14 is moved at a predetermined constant speed in the X-axis direction during scanning exposure, and is step-moved in the Y-axis direction when changing the exposure target area on the exposure object. A plurality of exposure target areas are formed on the exposure target.
  • the stage 14 relatively moves the object to be exposed and the projection module 17 in the scanning direction.
  • the exposure apparatus 1 is capable of exposing a plurality of exposure target areas on one exposure target.
  • a stage device such as that disclosed in US Patent Application Publication No. 2012/0057140 can be used.
  • the stage device is a so-called coarse and fine movement stage device including, for example, a gantry type two-dimensional coarse movement stage and a fine movement stage that is finely driven with respect to the two-dimensional coarse movement stage.
  • the coarse movement stage can move the exposure object in directions of three degrees of freedom in the horizontal plane
  • the fine movement stage can finely move the exposure object in directions of six degrees of freedom.
  • the main column 13 supports the optical surface plate 15 above the stage 14 (in the positive direction of the Z axis).
  • the optical platen 15 supports the illumination module 16 , the projection module 17 and the light modulation section 20 .
  • FIG. 2 is a diagram showing the outline of the configuration of the lighting module 16, the projection module 17, and the light modulating section 20.
  • the illumination module 16 is arranged above the optical surface plate 15 and connected to the light source unit 18 via the optical fiber 19 .
  • the lighting modules 16 include a first lighting module 16A, a second lighting module 16B, a third lighting module 16C and a fourth lighting module 16D.
  • the first lighting module 16A to the fourth lighting module 16D are not distinguished, they are collectively referred to as the lighting module 16.
  • FIG. 1 when the first lighting module 16A to the fourth lighting module 16D are not distinguished, they are collectively referred to as the lighting module 16.
  • Each of the first lighting module 16A to the fourth lighting module 16D converts the light emitted from the light source unit 18 via the optical fiber 19 into a first light modulating section 20A, a second light modulating section 20B, and a third light modulating section. The light is guided to each of 20C and the fourth optical modulation section 20D. The lighting module 16 illuminates the light modulating section 20 .
  • the light modulation unit 20 is controlled based on drawing data (digital data such as a two-dimensional bitmap format) of a circuit pattern to be transferred to a substrate 23 as an exposure object, and is controlled by an illumination module.
  • the spatial intensity distribution of illumination light from 16 is dynamically modulated according to the pattern to be exposed.
  • the modulated light modulated by the light modulating section 20 is guided to the projection module 17 .
  • the first optical modulating section 20A to the fourth optical modulating section 20D are arranged at different positions on the XY plane. In the following description, when the first optical modulation section 20A to the fourth optical modulation section 20D are not distinguished, they are collectively referred to as the optical modulation section 20.
  • the projection module 17 is arranged below the optical surface plate 15 and irradiates the substrate 23 (having a photosensitive layer on its surface) placed on the stage 14 with the modulated light modulated by the light modulation section 20 .
  • the projection module 17 forms an image on the substrate 23 with the light modulated by the light modulation unit 20 (image of light intensity distribution according to the pattern), and exposes the photosensitive layer (photoresist) of the substrate 23 .
  • the projection module 17 projects the image of the dynamically variable pattern generated by the light modulating section 20 onto the substrate 23 .
  • the projection module 17 includes first projection modules 17A to A fourth projection module 17D is included. In the following description, when the first projection module 17A to the fourth projection module 17D are not distinguished, they are collectively referred to as the projection module 17.
  • a unit composed of the first illumination module 16A, the first light modulation section 20A, and the first projection module 17A is called a first exposure module.
  • a unit composed of the second illumination module 16B, the second light modulation section 20B, and the second projection module 17B is called a second exposure module.
  • Each exposure module is provided at a mutually different position on the XY plane, and can expose a pattern at a different position of the exposure target placed on the stage 14 .
  • the stage 14 can scan-expose the entire surface of the exposure target or the entire surface of the exposure target area by moving relative to the exposure module in the X-axis direction, which is the scanning direction. 1, the first illumination module 16A, the first projection module 17A, and the first exposure module 20A in FIG.
  • a plurality of the second exposure modules of the second illumination module 16B, the second projection module 17B, and the second light modulation section 20B in FIG. 2 are arranged side by side in the Y-axis direction.
  • a plurality of third exposure modules including the third illumination module 16C, the third projection module 17C, and the third light modulation section 20C in FIG. 2 are arranged side by side in the Y-axis direction.
  • a plurality of fourth exposure modules including the fourth illumination module 16D, the fourth projection module 17D, and the fourth light modulation section 20D in FIG. 2 are arranged side by side in the Y-axis direction.
  • the illumination module 16 is also called an illumination system.
  • the illumination module 16 (illumination system) illuminates a spatial light modulator 201 (spatial light modulation element) of the light modulation section 20, which will be described later.
  • the projection module 17 is also called a projection unit.
  • the projection module 17 (projection section) may be a one-to-one system that projects the image of the pattern on the light modulation section 20 at one-to-one magnification, or may be an enlargement system or a reduction system.
  • the projection module 17 is preferably made of one or two kinds of glass materials (especially quartz or fluorite).
  • a pair of light source units 18 (light source unit R18R, light source unit L18L) is provided.
  • the light source unit 18 a light source unit using a laser with high coherence as a light source, a light source unit using a light source such as a semiconductor laser type UV-LD, and a light source unit using a lens relay type retarder can be adopted.
  • Examples of the light source 18a included in the light source unit 18 include lamps and laser diodes that emit light with wavelengths of 405 nm and 365 nm.
  • the light source unit 18 may include a light distribution system that supplies illumination light (pulse light) with approximately the same illuminance to each optical fiber 19 .
  • the light source unit 18 outputs an ultraviolet pulse having a peak intensity at a specific wavelength within the ultraviolet wavelength range (300 to 436 nm) and an extremely short emission time of, for example, within several tens of picoseconds at a frequency of 100 kHz or higher.
  • a possible fiber amplifier laser light source can also be utilized.
  • the exposure apparatus 1 includes a position measuring unit (not shown) composed of an interferometer, an encoder, etc., in addition to the units described above, and measures the relative position of the stage 14 with respect to the optical surface plate 15 .
  • the exposure apparatus 1 includes an AF (Auto Focus) section 42 that measures the position of the stage 14 or the substrate 23 on the stage 14 in the Z-axis direction, in addition to the above-described sections. Furthermore, when the exposure apparatus 1 exposes a pattern (base layer) that has already been exposed on the substrate 23 so that another pattern is superimposed thereon, the alignment pattern formed on the base layer is used to align the relative positions of the respective patterns.
  • An alignment unit 41 is provided to measure the position of the mark.
  • the AF unit 42 and/or the alignment unit 41 may have a TTL (Through the lens) configuration for measurement via the projection module 17 .
  • FIG. 3 is a diagram showing the outline of the configuration of the exposure module. Taking the first exposure module as an example, an example of specific configurations of the illumination module 16, the light modulation section 20, and the projection module 17 will be described.
  • the illumination module 16 includes a module shutter 161 and an illumination optical system 162.
  • the module shutter 161 switches whether or not to guide the pulsed light supplied from the optical fiber 19 at a predetermined intensity and at a predetermined cycle to the illumination optical system 162 .
  • the illumination optical system 162 emits pulsed light supplied from the optical fiber 19 to the light modulation section 20 via a collimator lens 162A, a fly-eye lens 162C, a condenser lens 162E, and the like, so that the light modulation section 20 is almost Illuminate evenly.
  • the fly-eye lens 162 ⁇ /b>C wavefront-divides the pulsed light incident on the fly-eye lens 162 ⁇ /b>C, and the condenser lens 162 ⁇ /b>E superimposes the wavefront-divided light onto the light modulation section 20 .
  • the illumination optical system 162 may have a rod integrator instead of the fly-eye lens 162C.
  • the illumination optical system 162 of this embodiment further includes a variable neutral density filter 162B, a variable aperture stop 162D and a plane mirror 162F.
  • the variable neutral density filter 162B attenuates the illuminance of the illumination light (pulse light) incident on the fly-eye lens 162C to adjust the exposure amount.
  • the variable aperture stop 162D changes the illumination ⁇ by adjusting the size (diameter) of a substantially circular light source image formed on the exit surface side of the fly-eye lens 162C.
  • the plane mirror 162F reflects the illumination light (pulse light) from the condenser lens 162E so that the light modulation section 20 is obliquely illuminated.
  • the light modulation unit 20 includes a spatial light modulator (SLM) 201 that functions as a variable mask that changes the pattern of the spatial intensity distribution of the reflected light of the illumination light at high speed based on drawing data, and an off light.
  • SLM spatial light modulator
  • An absorbing plate 202 is provided.
  • the spatial light modulator 201 is a digital mirror device (digital micromirror device, DMD).
  • the spatial light modulator 201 can spatially and temporally modulate the illumination light.
  • FIG. 4 is a diagram showing an overview of the configuration of the spatial light modulator 201 of this embodiment. Description will be made using a three-dimensional orthogonal coordinate system of Xm-axis, Ym-axis, and Zm-axis in FIG.
  • the spatial light modulator 201 comprises a plurality of micromirrors 203 (mirrors) arranged on the XmYm plane.
  • the micromirrors 203 constitute elements (pixels) of the spatial light modulator 201 .
  • the micromirror 203 can change the tilt angle around the Xm axis and around the Ym axis. For example, as shown in FIG. 5, the micromirror 203 is turned on (first state) by tilting around the Ym axis.
  • the micromirror 203 is turned off (second state) by tilting around the Xm axis as shown in FIG.
  • Micromirrors 203 in the ON state guide the pulsed light to projection module 17 .
  • a micromirror 203 in the off state does not direct pulsed light to the projection module 17 .
  • the spatial light modulator 201 controls the direction in which incident light is reflected for each micromirror (element) by switching the tilt direction of the micromirror 203 for each micromirror 203 .
  • the digital micromirror device of the spatial light modulator 201 has a pixel count of about 4 Mpixels, and can switch the on state and off state of the micromirror 203 at a period of about 10 kHz.
  • a plurality of elements of the spatial light modulator 201 are individually controlled at predetermined time intervals.
  • the element is the micromirror 203
  • the predetermined time interval is the period (for example, period 10 kHz) at which the micromirror 203 is switched between the ON state and the OFF state.
  • the off-light absorption plate 202 absorbs light (off-light) emitted (reflected) from the elements of the spatial light modulator 201 that are turned off. Light emitted from the ON-state elements of the spatial light modulator 201 is guided to the projection module 17 .
  • the projection module 17 projects the light emitted from the ON-state elements of the spatial light modulator 201 onto the exposure object.
  • the projection module 17 includes a magnification adjustment section 171 and a focus adjustment section 172 .
  • Light modulated by the spatial light modulator 201 enters the magnification adjustment unit 171 .
  • the magnification adjustment unit 171 adjusts the magnification of the imaging plane 163 of the modulated light emitted from the spatial light modulator 201 by driving some lenses in the optical axis direction.
  • Imaging plane 163 is the imaging plane (best focus plane) produced by projection module 17 that is conjugate with the overall reflective surface of spatial light modulator 201 .
  • the magnification adjustment unit 171 adjusts the magnification of the image on the surface of the substrate 23 as the exposure target.
  • the focus adjustment unit 172 drives the entire lens group in the optical axis direction so that the modulated light emitted from the spatial light modulator 201 forms an image on the surface of the substrate 23 measured by the AF unit 42 described above. Then, adjust the imaging position, that is, the focus.
  • the projection module 17 projects only the light image emitted from the turned-on element of the spatial light modulator 201 onto the surface of the exposure object. Therefore, the projection module 17 can project and expose the surface of the substrate 23 with the image of the pattern formed by the ON elements of the spatial light modulator 201 . That is, the projection module 17 can form a spatially modulated image of the variable mask on the surface of the substrate 23 .
  • the spatial light modulator 201 can switch the micromirror 203 between the ON state and the OFF state at a predetermined period (frequency) as described above, the projection module 17 can generate temporally modulated modulated light (i.e.
  • modulated light in which the light and dark shape (light distribution) in the XY plane of the imaging light flux that is reflected by the spatial light modulator 201 and enters the projection module 17 changes rapidly with time is formed on the surface of the substrate 23. can do.
  • the numerical aperture (NA) on the substrate 23 side of the imaging light flux reflected by the micromirrors in the ON state of the spatial light modulator 201 is adjusted (limited) to adjust the resolution and the depth of focus DOF.
  • a variable aperture stop 173 is provided for use in varying the .
  • the variable aperture stop 162D and the variable aperture stop 173 are optically substantially conjugate.
  • the spatial light modulator 201 is illuminated with pulsed light supplied at a predetermined cycle. Therefore, the spatial light modulator 201 is driven with a cycle that is an integral multiple of the cycle of the pulsed light. For example, where Tm is the period of the driving frequency (10 kHz) of the micromirrors of the spatial light modulator 201 and Tp is the period of the pulsed light, Tm/Tp is set to be an integer.
  • the projection module 17 irradiates the substrate 23 with pulsed light modulated by the spatial light modulator 201 .
  • a pattern is formed on the substrate 23 by an aggregate of pulsed light.
  • a plurality of pulsed lights (its center position) guided to the exposure object by the projection module 17 are guided to different positions on the substrate 23 .
  • the Xm-axis is parallel to the X-axis and the Ym-axis is parallel to the Y-axis.
  • the micromirror 203 in the ON state tilts with respect to the X-axis direction, which is the scanning direction.
  • the Ym axis is also called the first tilt axis T1.
  • the plurality of micromirrors 203 rotate around the first tilt axis T1 (Ym axis), and the plurality of micromirrors 203 adjust their tilts with respect to the scanning direction to turn on. , to emit light to the projection module 17 .
  • the plurality of micromirrors 203 are arranged linearly in the scanning direction, and the plurality of micromirrors 203 are also arranged in the direction of the first tilt axis T1.
  • control unit 21 is configured by, for example, a computer having an arithmetic unit such as a CPU and a storage unit.
  • the computer controls each part of the exposure apparatus 1 according to a program that controls each part that operates in exposure processing.
  • the controller 21 controls operations of the illumination module 16, the light modulator 20, the projection module 17, and the stage 14, for example.
  • the controller 21 switches the plurality of micromirrors 203 between an ON state (first state) and an OFF state (second state).
  • the storage unit is configured using a computer-readable storage medium device such as memory.
  • the storage unit stores various information regarding exposure processing.
  • the storage unit stores, for example, information about the exposure pattern in the exposure process (including recipe information such as target exposure amount and scanning speed in addition to drawing data).
  • the storage unit stores information input via the communication unit or the input unit, for example.
  • the communication unit includes a communication interface for connecting the exposure apparatus to an external device.
  • the input unit includes input devices such as a mouse, keyboard, and touch panel. The input unit receives input of various information for the exposure apparatus.
  • the stage 14 relatively moves the substrate 23 in a predetermined scanning direction with respect to the exposure module.
  • the light emitted by the exposure module scans the substrate 23 based on the information on the exposure pattern stored in the storage unit, and a predetermined exposure pattern is formed.
  • FIG. 7 is a diagram showing the exposure fields of view PIa and PIb of two adjacent projection modules 17 on the substrate 23 .
  • the exposure fields PIa and PIb are rectangular.
  • the long side directions of the exposure fields PIa and PIb are inclined with respect to the X direction and the Y direction.
  • the exposure fields of view PIa and PIb have shapes similar to the shape of the entire region where many micromirrors of the spatial light modulator 201 are arranged.
  • a central area PIac is an area of the exposure visual field PIa in which two long sides overlap in the X direction.
  • the edge area on the -Y side that is not included in the central area PIac is referred to as a first edge area PIa1.
  • a +Y-side end region of the exposure field PIa that is not included in the central region PIac is referred to as a second end region PIa2.
  • a central area PIbc is an area where two long sides of the exposure field PIb overlap in the X direction.
  • the edge area on the -Y side that is not included in the central area PIbc is referred to as a first edge area PIb1.
  • a +Y-side end region of the exposure visual field PIb that is not included in the central region PIbc is referred to as a second end region PIb2.
  • the Y-direction lengths of the central regions PIac and PIbc of the exposure fields PIa and PIb are both the width Ws.
  • Each of the first end regions PIa1, PIb1 and the second end regions PIa2, PIb2 has a width Wo.
  • the X-direction positions of the first end region PIa1 and the second end region PIb2 substantially match.
  • the shape and position of the exposure fields PIa and PIb are set by setting the arrangement of the exposure modules, the diaphragm, and the like.
  • FIG. 7 is a diagram showing an exposure area formed on the substrate 23 when the exposure target is scanned in the X direction by the stage 14 and exposed by the exposure visual fields PIa and PIb.
  • a scanning exposure area SIa exposed by the exposure field PIa and a scanning exposure area SIb exposed by the exposure field PIb are formed.
  • the scanning exposure areas SIa and SIb are obtained by extending the exposure visual fields PIa and PIb in the X direction by scanning exposure in the X direction.
  • the non-scanning direction end portions of the scanning exposure regions SIa and SIb overlap the non-scanning direction end portions of the adjacent scanning exposure regions SIa and SIb.
  • the exposed area by the first end area PIa1 and the exposed area by the second end area PIb2 match.
  • a "non-scanning direction" is a direction that intersects the scanning direction.
  • FIG. 7C is a graph showing the amount of exposure on the substrate 23 exposed by scanning exposure in the X direction.
  • the vertical axis of the graph is the amount of exposure.
  • the amount of exposure is a value that indicates the amount of exposure in the "overlap area” relative to the amount of exposure on the object to be exposed in the "non-overlap area", which will be described later.
  • the horizontal axis is the coordinate in the Y direction.
  • the amount of light E on the object to be exposed is a constant value E1.
  • the exposure amount E in the portion exposed by one of the scanning exposure fields SIa and SIb (hereinafter also referred to as “non-overlapping portion”) Sa and Sb
  • the exposure amount E in the portion Oa where the two are overlapped and exposed (hereinafter also referred to as “overlap portion”) has a value of E1. Therefore, the amount of light E in the non-overlapping portions Sa and Sb is equal to the amount of light E in the overlapping portion Oa.
  • the non-overlapping portions Sa and Sb are regions exposed without overlapping.
  • FIG. 7 is a graph showing the integrated illuminance (integrated exposure amount) of the light irradiated to the exposure object by the scanning exposure in the X direction.
  • the vertical axis of the graph is the integrated illuminance.
  • the integrated illuminance is the total sum of (pulse) light applied to the exposure object in each of the "non-overlap area" and the "overlap area”. That is, the greater the number of pulses, the greater the integrated illuminance, and the less the number of pulses, the smaller the integrated illuminance.
  • the horizontal axis is the coordinate in the Y direction. As shown in FIG.
  • the integrated illuminance in the overlapping portion Oa is higher than the integrated illuminance in the non-overlapping portions Sa and Sb.
  • the amount of exposure E in the non-overlapping portions Sa and Sb and the amount of exposure E in the overlapping portion Oa are equal.
  • the control unit 21 controls the ON state and OFF state of the micromirror 203 of the spatial light modulator 201 in regions corresponding to the regions of the exposure visual fields PIa and PIb (first end region PIa1 and second end region PIb2). More specifically, the control unit 21 controls the plurality of micromirrors 203 so that the number of pulsed lights irradiated to the overlapping portion Oa is greater than the number of pulsed lights irradiated to the non-overlapping portions Sa and Sb. do.
  • the number of ON-state micromirrors 203 per unit area in the overlapping portion Oa can be greater than the number of ON-state micromirrors 203 per unit area in the non-overlapping portions Sa and Sb.
  • the integrated illuminance in the overlapping portion Oa can be made higher than the integrated illuminance in the non-overlapping portions Sa and Sb.
  • the control unit 21 controls the plurality of micromirrors 203 so that the number of pulsed lights irradiated on the overlapping portion Oa is greater than the number of pulsed lights irradiated on the non-overlapping portions Sa and Sb. to control.
  • the amount of exposure E in the non-overlapping portions Sa and Sb and the amount of exposure E in the overlapping portion Oa are equal. Therefore, the non-overlapping portions Sa, Sb and the overlapping portion Oa can be prevented from being uneven in the amount of exposure.
  • the plurality of micromirrors 203 are arranged so that the number of pulsed lights irradiated on the overlapping portion Oa is greater than the number of pulsed lights irradiated on the non-overlapping portions Sa and Sb. to control.
  • the amount of exposure E in the non-overlapping portions Sa and Sb and the amount of exposure E in the overlapping portion Oa are equal. Therefore, the non-overlapping portions Sa, Sb and the overlapping portion Oa can be prevented from being uneven in the amount of exposure.
  • the exposure apparatus 1 may include a master clock (oscillator that generates a master clock) (not shown) that serves as a reference for synchronization.
  • a master clock oscillator that generates a master clock
  • devices such as the stage 14, the illumination module 16, the projection module 17, and the light modulation section 20 may be driven based on the master clock.
  • the control unit 21 can control the timing of pulse emission of the light source 18 and the operation of each device on the basis of the master clock. By referring to the master clock, the operation timing of each device is appropriately adjusted individually, and the relationship of operation timings among a plurality of devices is appropriately set.
  • FIGS. 8A-8B show a comparative embodiment.
  • FIG. 8A is a diagram showing exposure fields PIa and PIb of two adjacent projection modules 17.
  • FIG. 8B is a diagram showing an exposure area formed on the substrate 23 when exposed through the exposure fields PIa and PIb.
  • FIG. 8C is a graph showing the amount of exposure by scanning exposure in the X direction.
  • D of FIG. 8 is a graph showing the integrated illuminance of light applied to the substrate 23 by scanning exposure in the X direction.
  • the integrated illuminance in the overlapping portion Oa is equal to the integrated illuminance in the non-overlapping portions Sa and Sb.
  • the photosensitivity E in the overlapping portion Oa is lower than the photosensitivity E2 in the non-overlapping portions Sa and Sb.
  • the photosensitivity is lowered in the overlapping portion Oa.
  • the non-overlapping portions Sa, Sb and the overlapping portion Oa have a large bias in the amount of exposure.
  • the number of pulsed lights irradiated to the overlapping portion Oa is equal to the number of pulsed lights irradiated to the non-overlapping portions Sa and Sb.
  • the first end region PIa1 and the second end region PIb2 are substantially aligned in the X direction.
  • the positional relationship with the two-end region PIb2 is not limited to the illustrated example.
  • the integrated illuminance in the overlapping portion can be adjusted. For example, when the exposure field of view PIa and the exposure field of view PIb are close to each other, the integrated illuminance in the overlapping portion increases.
  • the configuration of the light shielding member is not particularly limited, but is disclosed in WO 2020/145044, WO 2020/203002, WO 2020/203003, WO 2020/203111, and WO 2020/138497.
  • a light-shielding member such as a light-shielding member or a light-reducing filter can be used.
  • the light shielding member can shield the light irradiated to the central regions PIac and PIbc of the exposure fields PIa and PIb (see (A) of FIG. 7). Thereby, the integrated illuminance of the central regions PIac and PIbc can be made lower than those of the first end region PIa1 and the second end region PIb2.
  • the position of the edge portion of the scanning exposure field may shift in the widening direction. If the number of ON-state micromirrors is adjusted at a position near the center of the scanning exposure field, such positional deviation is less likely to occur. Taking this into consideration, it is preferable to select the micromirrors to be turned on. Adjusting the number of micromirrors that are in the ON state evenly on both edge portions of the scanning exposure field may facilitate the suppression of positional deviation. Misalignment may be intentionally introduced by adjusting the number of micromirrors that are turned on unevenly at both edges of the scanning exposure field.
  • the exposure apparatus 1 can manufacture an electronic device such as a liquid crystal display (flat panel display) using the exposure method described above.
  • FIG. 9 is a diagram schematically showing an arrangement example of rectangular projection areas PIa and PIb of the spatial light modulator 201 projected onto the substrate 23 by each of the projection modules 17A and 17B shown in FIG.
  • An example of an exposure apparatus 1 and an exposure method according to the second embodiment will be described with reference to this figure.
  • the same reference numerals may be given to the same configurations as in the first embodiment, and the description thereof may be omitted.
  • the projection modules 17C and 17D other than the projection modules 17A and 17B are not shown in FIG. 9, the projection modules 17C and 17D are similar to the projection modules 17A and 17B.
  • the centers Axa and Axb of the projection fields 17a and 17b are assumed to be the optical axis positions of the projection modules 17A and 17B, respectively, and coincide with the centers of the exposure fields (hereinafter also referred to as projection regions) PIa and PIb.
  • the projection area PIa and the projection area PIb are arranged with an angle of ⁇ p in the XY plane parallel to the surface of the substrate 23, and are arranged with a predetermined gap in the Y direction. Splice exposure is performed by scanning and exposing the substrate 23 in the X direction so that the ends of the projection regions PIa and PIb in the Y direction overlap each other.
  • the portion where the projection areas PIa and PIb overlap is referred to as a joint area (joint portion) PIw
  • the non-overlapping portions are referred to as non-joint areas PIac and PIbc.
  • Wo be the width of the spliced region PIw
  • Ws be the width of the non-spliced regions PIac and PIbc.
  • the angle ⁇ p is determined by the dimensions and arrangement pitch of the micromirrors on the spatial light modulator 201, the drawing accuracy (drawing resolution) of the pattern line width projected onto the substrate 23 via the projection module 17, and the like. It is generally within 10 degrees.
  • the width Wo of the joint area PIw in the Y direction can slightly shift each spatial light modulator 201 in the XY directions. , Wo>Dx ⁇ sin ⁇ p in consideration of the adjustment range in the case of micro-rotation within the XY plane.
  • FIG. 10 is a diagram showing a state of joint exposure (normal exposure mode) using only the two projection areas PIa and PIb in FIG.
  • the black points (dots) inside each of the projection areas PIa and PIb in FIG. 10 show examples of the arrangement of the micromirrors that are turned on.
  • the line A plurality of micromirrors located on each of L1 and L2 are selected and sequentially turned on (dots) in synchronization with the scanning movement position of the substrate 23 and the cycle of the pulsed light. Therefore, a plurality of dots on one line L1 or L2 are pulse-exposed on the same point on the substrate 23 in the X direction.
  • the number of ON-state micromirrors (the number of dots) positioned on the lines L1 and L2 in the non-splice area Ws is determined according to the target exposure amount.
  • the integrated number (pulse number) Nt of the micromirrors in the ON state is determined corresponding to the target exposure amount.
  • the above is the same for each position of the lines L6 and L7 in the non-joining area Ws in the adjacent projection area PIa, and the integrated number (number of pulses) of the micromirrors in the ON state is set to be Nt.
  • the portion in the Y direction where the integrated number is zero is the area where the micromirrors are set to the OFF state and no exposure is performed (non-exposure portion on the drawing data).
  • the integrated number of ON-state micromirrors (dots) positioned on each of the lines L3, L4, and L5 passing through the joint region Wo in FIG. 10 is also set to be Nt corresponding to the target exposure amount.
  • Wo>Dx ⁇ sin ⁇ p is set.
  • the joint region Wo is overexposed. Therefore, in the normal exposure mode, the number of dots positioned on each of the lines L3, L4, and L5 in the joint region Wo on the projection region PIa side, and the number of dots on the lines LL3 and L4 in the joint region Wo on the projection region PIb side. , L5 and the number of dots positioned on each of them is set to be the integrated number (number of pulses) Nt.
  • the micromirror of the spatial light modulator 201 corresponds to the number of pixels (3840 ⁇ 1920) of the 4K screen, depending on the illuminance of the illumination light and the angle ⁇ p, the line L1,
  • the integrated number Nt of the ON-state micromirrors (dots) on L2, L6, and L7 is desirably 30 or more, preferably 50 or more.
  • the size of one dot on the substrate 23 is about 1 ⁇ m.
  • some photoresists for example, negative resists, even if the same exposure amount (accumulated number Nt) is given to the spliced region Wo as to the non-spliced region Ws, the exposure dose is insufficient after resist development. (variation in line width due to non-linearity of photosensitive characteristics, etc.).
  • FIG. 11 is a diagram schematically showing an example of a special exposure mode for negative resist.
  • the projection areas PIa and PIb and the lines L1 to L7 in FIG. 11 are the same as in FIG. 10, and the patterns exposed in the projection areas PIa and PIb are also the same as in FIG. As described with reference to FIG. 10, Wo>Dx ⁇ sin ⁇ p is set.
  • the drawing pattern data for driving the mirrors of the DMD is created such that the integrated number with (the number of micromirrors in the ON state) is greater than the number Nt corresponding to the target exposure amount.
  • the dots indicated by arrows are added to the dots in FIG.
  • How much the number of dots (the number of micromirrors in the ON state) should be increased in the spliced region PIw, that is, how much the amount of exposure applied to the spliced region PIw should be increased depends on the type of negative resist and the resist layer. It can be obtained by preliminary test exposure, etc., taking into consideration the thickness, etc.
  • the cumulative number Np at the center position (on line L4) in the width direction of the joint region PIw is greater than Nt and reaches the maximum value.
  • the exposure apparatus 1 of this type is required to have an error of several percent or less, preferably 2% or less, with respect to the target exposure amount. If the cumulative number Nt (see FIGS. 10 and 11) for obtaining the target exposure amount is set to 50, the increase or decrease of one of the dots results in an error of ⁇ 2%. Therefore, it is desirable that the integrated number Nt corresponding to the target exposure amount is as large as possible, but the drawing pattern data may increase accordingly. Also, this means that the integrated number Nt can be adjusted relatively freely with respect to the position in the Y direction. It is also possible to finely adjust the exposure amount by making the above differences.
  • FIG. 12 is a diagram showing a modification of the Y-direction distribution of the cumulative number of ON-state mirrors (dots) exposed in the spliced region PIw.
  • 12A and 12B show the illuminance of illumination light projected on the spatial light modulator 201 that generates the left projection area PIb and the spatial light modulator 201 that generates the right projection area PIa. Schematically shows correspondence when a difference occurs.
  • 12A corresponds to the normal exposure mode of FIG. 10
  • FIG. 12B corresponds to the special exposure mode of FIG.
  • the left projection area PIb has a higher illuminance than the right projection area PIa. Therefore, the integrated number Nt1 of ON-state mirrors required to obtain the target exposure amount on the projection area PIb side is less than the integrated number Nt2 of ON-state mirrors required to obtain the target exposure amount on the projection area PIa side. is set to be less. Then, as shown in FIG. 12A, the integrated number in the joint region PIw is set so as to linearly change between Nt1 and Nt2 according to the position in the Y direction.
  • (B) of FIG. 12 also shows a case in which there is a difference in illuminance between the left and right sides, and in the joint region PIw, the number of integrated pieces is set to be larger than the linear change in (A). be done.
  • This modification is used when the illuminance of illumination light to the spatial light modulators 201 cannot be precisely aligned among a large number of exposure modules, or when the reflected light intensity from the spatial light modulators 201 is precisely aligned between modules. It can be applied when the exposure apparatus is no longer available, and the operation time for stable operation of the exposure apparatus can be extended.
  • the number of micromirrors in the ON state is adjusted at the edge portion of the pattern existing in the splice region PIw shown in FIG. position may shift in the Y direction (line width widens).
  • the additional ON-state micromirrors are selected to be located inside the edge of the projected pattern in the ON state. As a result, it is possible to suppress the positional deviation of the pattern existing in the splicing region PIw and the fluctuation of the line width.
  • both edges in the Y direction of the pattern existing in the joint region PIw are slightly widened. Micromirrors corresponding to both edge portions can be intentionally added and turned on so as to do so.
  • FIG. 13A is a diagram showing an exposure region formed on an exposure target when the exposure target (substrate 23) according to the third embodiment is exposed.
  • (B) is a diagram showing an exposure region formed on an exposure target.
  • (C) is a graph showing the integrated number of pulses by scanning exposure.
  • An example of an exposure apparatus 1 and an exposure method according to the third embodiment will be described with reference to this figure. In the following description, the same reference numerals may be given to the same configurations as in the first embodiment, and the description thereof may be omitted.
  • FIG. 7 shows an example of exposing the overlapping portion Oa using two projection modules 17 adjacent in a direction intersecting the scanning direction (for example, the Y direction). An example is shown in which two projection modules 17 (for example, 17b and 17d) adjacent in direction are used to make the integrated pulse number in the overlapping portion Oa higher than the integrated pulse number in the non-overlapping portions Sa and Sb.
  • FIG. 13 shows the exposure regions formed on the exposure object when the exposure object is scanned in the X direction by the stage 14 and exposed by the exposure visual fields PIa and PIb. As shown in FIG. 13A, a scanning exposure area SIa exposed by the exposure field PIa and a scanning exposure area SIb exposed by the exposure field PIb are formed on the exposure object.
  • the scanning exposure areas SIa and SIb are obtained by extending the exposure visual fields PIa and PIb in the X direction by scanning exposure in the X direction.
  • the scanning-direction end of the scanning exposure region SIa overlaps the scanning-direction end of the adjacent scanning exposure region SIb.
  • the non-overlapping portions Sa and Sb are areas exposed only in the scanning exposure area SIa or only in the scanning exposure area SIb without the scanning exposure area SIa and the scanning exposure area SIb overlapping.
  • the number of integrated pulses in the overlapping portion Oa can be made higher than the number of integrated pulses in the non-overlapping portions Sa and Sb.
  • the scanning exposure area SIa and the scanning exposure area SIb can have an overlapping portion Oa in the non-scanning direction. As a result, the moving distance of the stage 14 in the scanning direction can be reduced while keeping the line width of the negative resist at a predetermined amount.
  • the stage 14 scans the exposure object in the +X direction to form the scanning exposure area SIa
  • the stage 14 is moved in the -X direction by an amount corresponding to the overlapping portion Oa, and then the exposure object can be scanned in the +X direction by the stage 14 to form the scanning exposure area SIb.
  • the scanning exposure area SIa and the scanning exposure area SIb are formed by scanning the exposure object in the same direction.
  • the scanning direction of the exposure object may be reversed from the scanning direction of the exposure object when forming the scanning exposure region SIb.
  • the width of the overlapping portion Oa in the scanning direction can be changed. For example, if the width is increased, it is possible to average and reduce the effects of stage movement errors that may occur during scanning exposure. If the width is shortened, the exposure time of the overlapping portion Oa can be shortened, and the overall distance traveled by the stage can be shortened.
  • the horizontal axis indicates the position of the exposure object in the scanning direction.
  • the vertical axis is the integrated pulse number.
  • the integrated pulse number can be monotonically changed (monotonously increased or monotonously decreased).
  • the integrated pulse number can be monotonously changed (monotonously increased or monotonously decreased).
  • the monotonous change includes not only linear monotonous change as shown in FIG. 13C, but also nonlinear monotonous change.
  • the resist has non-linear photosensitivity, it is particularly effective to non-linearly change the cumulative number of pulses when exposing the overlapping portion Oa.
  • FIG. 14 is a diagram schematically showing an example of exposure modes of an exposure apparatus according to the fourth embodiment.
  • An example of an exposure apparatus 1 and an exposure method according to the fourth embodiment will be described with reference to this figure.
  • the same reference numerals may be given to the same configurations as in the first embodiment, and the description thereof may be omitted.
  • the number of integrated pulsed lights irradiated to the overlapping portion Oa can be made larger than the number of integrated pulsed lights irradiated to the non-overlapping portions Sa and Sb. That is, the number of micromirrors that can be used for exposing the overlapping portion Oa can be made larger than the number of micromirrors that can be used for exposing the non-overlapping portions Sa, Sb.
  • the exposure length (that is, the number of pulses) is increased or the number of pulses is decreased to relatively increase the substantial integrated illuminance in the overlapping portion, but the integrated illuminance in the overlapping portion is
  • the adjustment method is not limited to this.
  • a method of correcting the line width to the design value based on the actual exposure result is also conceivable. In this case, it is possible to set the line width of the negative resist to a predetermined amount by adding or deleting pulses near the edge of the line that is actually exposed.
  • the line width of the pattern to be exposed is changed by increasing or decreasing the number of pulses in the vicinity of the pattern so that the shape and line width of the pattern formed by the negative resist in the overlapping portion and the non-overlapping portion are substantially the same. Correction and shape correction by increasing or decreasing the number of pulses to places other than the pattern edge portion may be corrected from the exposure result.
  • the exposure method of the embodiment includes the following aspects. Increase or decrease the number of pulses in the vicinity of the exposure pattern in the non-overlapping portion, the overlapping portion, or both so that the line width and shape of the exposure pattern in the non-overlapping portion and the overlapping portion are approximately the same, or in the vicinity of the pattern
  • the resist formed on the exposure target is, for example, a negative resist in which the light-irradiated portion is formed by photoreaction after development.
  • the exposure data creation method of the embodiment includes the following aspects. Increase or decrease the number of pulses in the vicinity of the exposure pattern in the non-overlapping portion, the overlapping portion, or both so that the line width and shape of the exposure pattern in the non-overlapping portion and the overlapping portion are approximately the same, or in the vicinity of the pattern A method of creating exposure data that increases or decreases the number of internal pulses.
  • the resist formed on the exposure target is, for example, a negative resist in which the light-irradiated portion is formed by photoreaction after development.

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
PCT/JP2022/026496 2021-07-05 2022-07-01 露光装置、露光方法およびフラットパネルディスプレイの製造方法、ならびに露光データ作成方法 WO2023282210A1 (ja)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066371A1 (ja) * 2003-01-23 2004-08-05 Nikon Corporation 露光装置
JP2009169189A (ja) * 2008-01-17 2009-07-30 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2011059716A (ja) * 2004-11-08 2011-03-24 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2019028084A (ja) * 2017-07-25 2019-02-21 凸版印刷株式会社 露光装置

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JP2005266779A (ja) 2004-02-18 2005-09-29 Fuji Photo Film Co Ltd 露光装置及び方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004066371A1 (ja) * 2003-01-23 2004-08-05 Nikon Corporation 露光装置
JP2011059716A (ja) * 2004-11-08 2011-03-24 Asml Netherlands Bv リソグラフィ装置およびデバイス製造方法
JP2009169189A (ja) * 2008-01-17 2009-07-30 Nikon Corp 露光方法及び装置、並びにデバイス製造方法
JP2019028084A (ja) * 2017-07-25 2019-02-21 凸版印刷株式会社 露光装置

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