WO2023248895A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

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Publication number
WO2023248895A1
WO2023248895A1 PCT/JP2023/022089 JP2023022089W WO2023248895A1 WO 2023248895 A1 WO2023248895 A1 WO 2023248895A1 JP 2023022089 W JP2023022089 W JP 2023022089W WO 2023248895 A1 WO2023248895 A1 WO 2023248895A1
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WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
substrate
emitting device
heat sink
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2023/022089
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English (en)
French (fr)
Japanese (ja)
Inventor
和則 富士
晃輝 坂本
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to JP2024528914A priority Critical patent/JPWO2023248895A1/ja
Publication of WO2023248895A1 publication Critical patent/WO2023248895A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/02208—Mountings; Housings characterised by the shape of the housings
    • H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/022—Mountings; Housings
    • H01S5/023—Mount members, e.g. sub-mount members
    • H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management

Definitions

  • the present disclosure relates to a semiconductor light emitting device.
  • a semiconductor light emitting device is known to have a configuration including a semiconductor light emitting element and a drive circuit element that drives the semiconductor light emitting element (see, for example, Patent Document 1).
  • Such semiconductor light emitting devices are widely used as light source devices installed in various electronic devices.
  • a semiconductor light emitting device includes a base, a conductive heat sink provided upright on the base, a first substrate and a second substrate attached to the heat sink so as to be spaced apart from each other, and
  • the semiconductor light emitting device includes a semiconductor light emitting device mounted on one substrate, and a drive circuit device mounted on the second substrate and configured to drive the semiconductor light emitting device.
  • a semiconductor light emitting device includes a base, a conductive heat sink provided upright on the base, a substrate attached to the heat sink, and a semiconductor light emitting device directly attached to the heat sink at a position different from the substrate.
  • the semiconductor light emitting device includes a semiconductor light emitting device attached to the semiconductor light emitting device, and a drive circuit device mounted at least partially on the substrate and configured to drive the semiconductor light emitting device.
  • the thermal influence caused by the semiconductor light emitting element of the drive circuit element can be reduced.
  • FIG. 1 is a perspective view of a semiconductor light emitting device according to a first embodiment.
  • FIG. 2 is a perspective view of the semiconductor light emitting device of FIG. 1 with the cap removed.
  • FIG. 3 is a cross-sectional view schematically showing the semiconductor light emitting device of FIG. 4 is a perspective view schematically showing the stem of the semiconductor light emitting device of FIG. 2.
  • FIG. 5 is a perspective view schematically showing the stem seen from the opposite side from FIG. 4.
  • FIG. FIG. 6 is an enlarged view of the switching element in FIG. 3 and its surroundings.
  • 7 is a side view schematically showing the semiconductor light emitting device of FIG. 2.
  • FIG. FIG. 8 is a cross-sectional view of the semiconductor light emitting device taken along line F8-F8 shown in FIG. FIG.
  • FIG. 9 is a front view of the first and second substrates attached to the heat sink of the semiconductor light emitting device.
  • FIG. 10 is a back view of the first substrate and second substrate of FIG. 9.
  • FIG. 11 is a circuit diagram of a laser system including the semiconductor light emitting device of the first embodiment.
  • FIG. 12 is a perspective view schematically showing a perspective structure of a semiconductor light emitting unit including a semiconductor light emitting device.
  • FIG. 13 is a side view of the semiconductor light emitting unit of FIG. 12.
  • FIG. 14 is an enlarged view of the cap cover portion of FIG. 13 and its surroundings.
  • FIG. 15 is a perspective view schematically showing a perspective structure of a semiconductor light emitting unit of a comparative example.
  • FIG. 12 is a perspective view schematically showing a perspective structure of a semiconductor light emitting unit including a semiconductor light emitting device.
  • FIG. 13 is a side view of the semiconductor light emitting unit of FIG. 12.
  • FIG. 14 is an enlarged view of the cap
  • FIG. 16 is a cross-sectional view of a semiconductor light emitting device of a comparative example.
  • FIG. 17 is a graph showing the thermal conduction analysis results of the semiconductor light emitting unit of the comparative example.
  • FIG. 18 is a graph showing the thermal conduction analysis results of the semiconductor light emitting unit of the first embodiment.
  • FIG. 19 is a graph showing the results of heat conduction analysis when the material of the heat sink is changed for the semiconductor light emitting unit of the first embodiment.
  • FIG. 20 is a graph showing the results of heat conduction analysis when the volume of the heat sink is changed for the semiconductor light emitting unit of the first embodiment.
  • FIG. 21 is a graph showing the results of thermal conduction analysis of a semiconductor light emitting unit including a semiconductor light emitting device of a comparative example.
  • FIG. 22 is a perspective view of the semiconductor light emitting device of the second embodiment with the cap removed.
  • FIG. 23 is an enlarged view of the switching element and its surroundings of the semiconductor light emitting device of FIG. 22.
  • FIG. 24 is a front view of the first and second substrates attached to the heat sink of the semiconductor light emitting device.
  • FIG. 25 is a back view of the first substrate and second substrate of FIG. 24.
  • FIG. 26 is a perspective view of the semiconductor light emitting device of the third embodiment with the cap removed.
  • FIG. 27 is an enlarged view of the switching element and its surroundings of the semiconductor light emitting device of FIG. 26.
  • FIG. 28 is a front view of the first and second substrates attached to the heat sink of the semiconductor light emitting device.
  • FIG. 29 is a back view of the first substrate and second substrate of FIG. 28.
  • FIG. 30 is a perspective view of the semiconductor light emitting device of the fourth embodiment with the cap removed.
  • FIG. 31 is a cross-sectional view schematically showing the cross-sectional structures of a heat sink, a light emitting unit, and a drive unit in the semiconductor light emitting device of FIG. 30.
  • FIG. 32 is a perspective view of the semiconductor light emitting device of the fifth embodiment with the cap removed.
  • FIG. 33 is a cross-sectional view schematically showing the cross-sectional structures of a heat sink, a light emitting unit, and a drive unit in the semiconductor light emitting device of FIG. 32.
  • FIG. 34 is a perspective view of the semiconductor light emitting device of the sixth embodiment with the cap removed.
  • FIG. 35 is a cross-sectional view schematically showing the cross-sectional structure of a heat sink, a light emitting unit, and a drive unit in the semiconductor light emitting device of FIG. 34.
  • FIG. 36 is a perspective view of a modified semiconductor light emitting device with the cap removed.
  • FIG. 37 is an enlarged side view showing the side structure of the cap cover part and the surrounding area of the semiconductor light emitting unit of the modified example.
  • FIG. 38 is an enlarged front view showing the front structure of the cap cover part and its surroundings with respect to the semiconductor light emitting unit of FIG. 37.
  • FIG. 1 shows a perspective structure of a semiconductor light emitting device 10.
  • FIG. 2 shows a perspective structure of the semiconductor light emitting device 10 of FIG. 1 with a cap 50, which will be described later, removed.
  • the semiconductor light emitting device 10 shown in FIG. 1 can be used, for example, in a laser system as LiDAR (Light Detection and Ranging, Laser Imaging Detection and Ranging), which is an example of three-dimensional distance measurement. Note that the semiconductor light emitting device 10 may be used in a laser system for two-dimensional distance measurement.
  • LiDAR Light Detection and Ranging, Laser Imaging Detection and Ranging
  • the semiconductor light emitting device 10 includes a stem 20, a light emitting unit 30 and a drive unit 40 attached to the stem 20, and a cap 50 surrounding the light emitting unit 30 and the drive unit 40.
  • the semiconductor light emitting device 10 is a CAN package type semiconductor laser.
  • the stem 20 includes a flat base 21, a conductive heat sink 22 erected on the base 21, and a plurality of (four in this embodiment) lead pins 23A to 23A, which constitute external terminals. 23D. Both the light emitting unit 30 and the driving unit 40 are attached to the heat sink 22.
  • the thickness direction of the base 21 will be referred to as the z direction, and two mutually orthogonal directions among the directions orthogonal to the z direction will be referred to as the x direction and the y direction.
  • the light emitting unit 30 includes a first substrate 31 and a semiconductor light emitting element 32 mounted on the first substrate 31.
  • the first substrate 31 is attached to the heat sink 22.
  • a semiconductor laser is used as the semiconductor light emitting device 32.
  • mounting means joining with a conductive joining material such as solder paste or silver (Ag) paste.
  • component A is mounted on component B means that component A is directly attached to component B using a conductive bonding material.
  • the drive unit 40 includes a second substrate 41 and a drive circuit element 42 mounted on the second substrate 41.
  • the second substrate 41 is attached to the heat sink 22 at a position spaced apart from the first substrate 31. More specifically, the second substrate 41 is attached to a portion of the heat sink 22 that is closer to the base 21 than the first substrate 31 is.
  • the second substrate 41 is spaced apart from the protrusion 26 of the heat sink 22 in the z direction. Note that an intermediate member different from the second substrate 41 and the heat sink 22 may be interposed between the second substrate 41 and the heat sink 22.
  • the drive circuit element 42 includes a switching element 43 and a plurality of (four in this embodiment) capacitors 44.
  • the switching element 43 is individually electrically connected to the four light emitting parts 32A (see FIG. 6) by four wires W1.
  • the switching element 43 is individually electrically connected to the lead pins 23A and 23B by wires W2 and W3.
  • the second substrate 41 is electrically connected to the lead pins 23C by wires W4.
  • the cap 50 covers the heat sink 22, the first substrate 31, the second substrate 41, the semiconductor light emitting element 32, and the drive circuit element 42.
  • the cap 50 is formed into a cylindrical shape.
  • the cap 50 is made of, for example, a light-shielding material.
  • An example of a light blocking material is iron (Fe).
  • the cap 50 has a top plate portion 52 having an opening 53 and a cylindrical portion 51 with the top plate portion 52 provided at one end.
  • the cylinder portion 51 has a cylindrical shape.
  • the top plate portion 52 covers one end of the cylindrical portion 51 in the z direction.
  • the opening 53 is configured to allow light from the semiconductor light emitting element 32 to pass through the top plate 52 and be emitted.
  • the cap 50 has a transparent plate 54 that closes the opening 53.
  • the transparent plate 54 is a flat plate made of transparent resin or glass.
  • the transparent plate 54 is attached to the inner surface of the top plate portion 52.
  • the cap 50 has an opening 53 that opens in one direction and a side surface that faces in a direction that intersects with the one direction.
  • one direction in which the opening 53 opens is the z direction.
  • the side surface of the cap 50 is the outer circumferential surface of the cylindrical portion 51.
  • the outer circumferential surface of the cylindrical portion 51 faces in a direction intersecting the z direction. Therefore, in this embodiment, the direction that intersects with one direction is the direction that intersects with the z direction.
  • the outer circumferential surface of the cylindrical portion 51 faces in a direction perpendicular to the z direction. Note that the directions described here are changed depending on the arrangement of the semiconductor light emitting device 10. That is, if the opening 53 opens not in the z direction but in the y direction, for example, one direction is the y direction, and a direction intersecting the one direction is a direction intersecting the y direction.
  • the semiconductor light emitting device 10 current is supplied to the semiconductor light emitting element 32 via the lead pins 23A to 23D and the switching element 43. Thereby, the laser light emitted from the semiconductor light emitting element 32 passes in the z direction, that is, through the opening 53 of the cap 50.
  • the base 21 and the heat sink 22 are integrally formed. Therefore, in this embodiment, the base 21 is also formed of a conductive material.
  • the base 21 and the heat sink 22 are made of, for example, copper (Cu), Cu alloy, Fe, Fe alloy, aluminum (Al), Al alloy, or the like. Note that the base 21 and the heat sink 22 may be formed separately.
  • the stem 20 is constructed by joining together the separately formed base 21 and heat sink 22. Further, the material forming the base 21 and the material forming the heat sink 22 may be different from each other.
  • the shape of the base 21 when viewed from the z direction is approximately circular.
  • the diameter of the base 21 is about 5.6 mm
  • the thickness of the base 21 is about 1.2 mm.
  • the base 21 includes a base surface 21s and a base back surface 21r facing oppositely to each other in the z direction.
  • the z direction can be said to be the thickness direction of the base 21. Note that the diameter and thickness of the base 21 can be changed arbitrarily.
  • the heat sink 22 is erected in a direction perpendicular to the base surface 21s of the base 21. That is, the heat sink 22 extends in the thickness direction of the base 21. Therefore, the z direction can be said to be the direction in which the heat sink 22 is erected.
  • the heat sink 22 is provided at a position offset from the center of the base 21 in the y direction.
  • the heat sink 22 extends from the base surface 21s of the base 21 in the z direction.
  • the z direction can be said to be the direction in which the heat sink 22 is erected.
  • the height of the heat sink 22 from the base surface 21s of the base 21 is approximately 4.45 mm.
  • the shape of the heat sink 22 when viewed from the z direction is approximately fan-shaped.
  • a surface of the heat sink 22 on the center side of the base 21 is a mounting surface 24 to which the light emitting unit 30 and the drive unit 40 (see FIG. 3) are mounted.
  • the mounting surface 24 includes a flat surface along the z direction and the x direction.
  • the heat sink 22 includes, as the mounting surfaces 24, a first mounting surface 24A to which the light emitting unit 30 is attached, and a second mounting surface 24B to which the drive unit 40 is attached.
  • the first mounting surface 24A is formed closer to the tip of the heat sink 22 than the second mounting surface 24B.
  • the first mounting surface 24A is a surface that is continuous with the distal end surface 22a of the heat sink 22.
  • Both the first mounting surface 24A and the second mounting surface 24B are flat surfaces along the xz plane.
  • the second mounting surface 24B is formed at a position closer to the base 21 than the tip of the heat sink 22.
  • the area of the first mounting surface 24A is smaller than the area of the second mounting surface 24B.
  • the heat sink 22 includes a stepped portion 25 such that the position of the first mounting surface 24A and the position of the second mounting surface 24B are different from each other in the y direction. That is, the first mounting surface 24A protrudes from the second mounting surface 24B in the thickness direction perpendicular to the direction in which the heat sink 22 is erected (z direction).
  • the y direction can be said to be the thickness direction of the heat sink 22.
  • the tip of the heat sink 22 projects closer to the center of the base 21 in the y direction than the portion of the heat sink 22 that is closer to the base 21 than the tip of the heat sink 22 .
  • the heat sink 22 has a protrusion 26 that includes the first mounting surface 24A. The protrusion 26 protrudes in the y direction with respect to the second mounting surface 24B.
  • the lead pins 23A, 23B, and 23C penetrate the base 21 in its thickness direction (z direction). More specifically, lead pin 23A is inserted into through hole 21A, lead pin 23B is inserted into through hole 21B, and lead pin 23C is inserted into through hole 21C. Between the lead pin 23A and the inner circumferential surface forming the through hole 21A, between the lead pin 23B and the inner circumferential surface forming the through hole 21B, and between the lead pin 23C and the inner circumferential surface forming the through hole 21C. is filled with an insulating material 27 that insulates the lead pins 23A, 23B, and 23C from the base 21.
  • the insulating material 27 is made of, for example, an insulating resin material or glass.
  • the lead pin 23D protrudes from the base back surface 21r of the base 21 in the z direction, but does not protrude from the base surface 21s (see FIG. 4) in the z direction.
  • the lead pin 23D is fixed at a position overlapping the heat sink 22 when viewed from the z direction.
  • the lead pin 23D includes a terminal portion 29D.
  • the terminal portion 29D is a portion of the lead pin 23D that protrudes from the back surface 21r of the base in the z direction, and constitutes an external terminal that is electrically connected to the circuit board when the semiconductor light emitting device 10 is mounted on the circuit board.
  • a connecting portion 29DA having a larger diameter than the tip of the terminal portion 29D is provided at the end of the terminal portion 29D of the lead pin 23D on the base back surface 21r side of the base 21.
  • the connecting portion 29DA is formed, for example, in a flat plate shape.
  • the connecting portion 29DA is fixed to the base 21.
  • the lead pin 23D is electrically connected to the base 21. Since the base 21 is electrically connected to the heat sink 22, the lead pin 23D is electrically connected to the heat sink 22.
  • FIG. 6 shows an enlarged front structure of the light emitting unit 30 and the drive unit 40 of the semiconductor light emitting device 10.
  • FIG. 7 shows the side structure of the switching element 43 of FIG. 2 and its surroundings.
  • FIG. 8 shows cross-sectional structures of the heat sink 22, the light emitting unit 30, and the drive unit 40.
  • FIG. 9 shows the front structure of the first substrate 31 and the second substrate 41 attached to the heat sink 22.
  • FIG. 10 shows the backside structure of each of the first substrate 31 and the second substrate 41.
  • wires W1 to W4 are omitted for ease of understanding.
  • the first substrate 31 is attached to the first attachment surface 24A of the heat sink 22. More specifically, the first substrate 31 is bonded to the first mounting surface 24A using a conductive bonding material such as solder paste or silver (Ag) paste. In this embodiment, the first substrate 31 is bonded to the first mounting surface 24A using Ag paste.
  • the first substrate 31 is formed in a rectangular shape, with the x direction being the longitudinal direction and the z direction being the lateral direction, when viewed from the y direction.
  • the linear expansion coefficient of the heat sink 22 is 16.5 ⁇ 10 ⁇ 6 (1/K)
  • the first base material 31A is made of alumina
  • the first The linear expansion coefficient of the substrate 31 is 7.2 ⁇ 10 ⁇ 6 (1/K)
  • the semiconductor light emitting device 32 is made of gallium arsenide (GaAs)
  • the linear expansion coefficient of the semiconductor light emitting device 32 is 5.4 ⁇ 10 ⁇ 6 (1/K).
  • the first base material 31A has a high heat transfer coefficient and a coefficient of linear expansion close to that of the semiconductor light emitting element 32.
  • the first substrate 31 includes a first substrate front surface 31s and a first substrate back surface 31r facing oppositely to each other in the y direction.
  • the first substrate surface 31s faces the same side as the first mounting surface 24A, and the first substrate back surface 31r faces the first mounting surface 24A.
  • the semiconductor light emitting device 32 is mounted on the first substrate surface 31s.
  • the first substrate surface 31s is constituted by the base material surface of the first base material 31A.
  • the first substrate back surface 31r is constituted by the back surface of the first base material 31A.
  • the thickness TB1 of the first substrate 31 is, for example, 0.1 mm or more and 0.4 mm or less. Further, the thickness TB1 of the first substrate 31 can be defined by the distance between the first substrate surface 31s and the first substrate back surface 31r of the first substrate 31 in the y direction. The thickness TB2 of the second substrate 41 can be defined by the distance in the y direction between a second substrate surface 41s and a second substrate back surface 41r, which will be described later, of the second substrate 41.
  • the first substrate 31 includes a plurality of (four in this embodiment) through holes 34.
  • Each through hole 34 is formed of a conductive material.
  • each through hole 34 is formed of a material containing Cu.
  • the plurality of through holes 34 are arranged in a line in the x direction while being aligned with each other in the z direction. That is, the plurality of through holes 34 are arranged in a line in the longitudinal direction of the first substrate 31. Each through hole 34 penetrates the first substrate 31 in its thickness direction (y direction). Each through hole 34 is connected to both the front side wiring 33s and the back side wiring 33r. Thereby, the front side wiring 33s and the back side wiring 33r are electrically connected by each through hole 34.
  • the semiconductor light emitting element 32 is formed in a rectangular shape, when viewed from the y direction, the x direction is the longitudinal direction, and the z direction is the lateral direction.
  • Each light emitting section 32A is formed in a rectangular shape, with the z direction being the longitudinal direction and the x direction being the lateral direction, when viewed from the y direction. It can also be said that the plurality of light emitting sections 32A are arranged in the longitudinal direction of the semiconductor light emitting element 32.
  • the semiconductor light emitting element 32 has an element front surface 32s and an element rear surface 32r facing oppositely to each other in the y direction.
  • the element surface 32s faces the same side as the first substrate surface 31s
  • the element back surface 32r faces the same side as the first substrate back surface 31r. Therefore, the element back surface 32r is bonded to the front surface wiring 33s via a conductive bonding material.
  • a conductive bonding material For example, Ag paste is used as the conductive bonding material.
  • the semiconductor light emitting device 32 includes an anode electrode 36 and a cathode electrode 37.
  • the anode electrode 36 is formed on the element surface 32s.
  • the cathode electrode 37 is formed on the back surface 32r of the element. Thereby, the cathode electrode 37 is electrically connected to the front side wiring 33s via the conductive bonding material.
  • the front side wiring 33s is electrically connected to the back side wiring 33r via the through hole 34, and the back side wiring 33r is electrically connected to the first mounting surface 24A via a conductive bonding material. Therefore, the cathode electrode 37 is electrically connected to the heat sink 22.
  • the semiconductor light emitting element 32 has a light emitting surface 32a that emits light in the z direction.
  • the light emitting surface 32a faces the same side as the distal end surface 22a of the heat sink 22.
  • the light emitting surface 32a is arranged at a position overlapping with the opening 53 of the cap 50 (see FIG. 1).
  • the second substrate 41 is formed in a rectangular shape, when viewed from the y direction, the x direction is the longitudinal direction, and the z direction is the lateral direction.
  • the size of the second substrate 41 in the x direction is larger than the size of the first substrate 31 in the x direction, and the size of the second substrate 41 in the z direction is larger than the size of the first substrate 31 in the z direction.
  • the second substrate 41 is spaced apart from the base surface 21s of the base 21 in the z direction.
  • the second board 41 is arranged closer to the first mounting surface 24A of the second mounting surface 24B. More specifically, the center of the second substrate 41 in the z direction is located closer to the first mounting surface 24A than the center of the second mounting surface 24B in the z direction.
  • the second board 41 is arranged at the center of the second mounting surface 24B in the x direction. When viewed from the y direction, it can be said that the distance between the second board 41 and the first mounting surface 24A in the z direction is shorter than the distance between the second board 41 and the base surface 21s of the base 21 in the z direction. .
  • the length of the second board 41 in the x direction is shorter than the length of the second mounting surface 24B in the x direction. In one example, the length of the second substrate 41 in the x direction is greater than 1/2 of the length of the second mounting surface 24B in the x direction.
  • the thickness of the second substrate 41 is, for example, 0.1 mm or more and 0.4 mm or less.
  • the second substrate 41 includes a second substrate front surface 41s and a second substrate back surface 41r facing oppositely to each other in the y direction.
  • the second board surface 41s faces the same side as the second mounting surface 24B, and the second board back surface 41r faces the second mounting surface 24B.
  • the drive circuit element 42 is mounted on the second substrate surface 41s.
  • the second substrate surface 41s is constituted by the base material surface of the second base material 41A.
  • the second substrate back surface 41r is constituted by the base material back surface of the second base material 41A.
  • the second board 41 is attached to the second mounting surface 24B such that the second board surface 41s is at the same position as the first mounting surface 24A in the y direction. . That is, the distance DB between the second mounting surface 24B and the second board surface 41s of the second board 41 in the y direction, and the distance DH between the second mounting surface 24B and the first mounting surface 24A in the y direction. are equal to each other.
  • the difference between distance DB and distance DH is, for example, within 10% of distance DH, it can be said that distance DB and distance DH are equal to each other.
  • the second substrate surface 41s is at the same position as the first mounting surface 24A in the y direction.
  • the second substrate 41 includes a front-side wiring 45s formed on a second substrate surface 41s, and a front-side resist layer 46s covering the front-side wiring 45s.
  • the front side wiring 45s is formed in a rectangular shape that is one size smaller than the second substrate surface 41s, as shown by the broken line in FIG.
  • the front side resist layer 46s is formed of an insulating material.
  • the front side resist layer 46s is formed over the entire second substrate surface 41s.
  • the front side resist layer 46s has a switching element opening 46a, a plurality (in this embodiment, two) of capacitor openings 46b, and a wire opening 46c.
  • the switching element opening 46a, each capacitor opening 46b, and the wire opening 46c expose the front-side wiring 45s from the front-side resist layer 46s.
  • the plurality of through holes 47 are arranged in a grid pattern. Each through hole 47 penetrates the second substrate 41 in its thickness direction (y direction). Each through hole 47 is connected to the front side wiring 45s.
  • a heat dissipating material 48 is provided inside each through hole 47. More specifically, the heat dissipating material 48 is provided so as to fill the inside of each through hole 47 .
  • the heat dissipating material 48 is made of, for example, a metal material.
  • the heat dissipating material 48 is formed of a material containing Cu. That is, the heat dissipating material 48 may be formed of the same material as the through hole 47. Note that the heat dissipation material 48 may be formed of a different material from that of the through hole 47.
  • the heat dissipating material 48 may be formed of a material having higher thermal conductivity than the second substrate 41. In one example, the heat dissipation material 48 may be formed of an insulating material such as ceramic.
  • the second substrate 41 has a backside resist layer 46r that covers the second substrate backside 41r.
  • the back side resist layer 46r covers each through hole 47 and the heat dissipation material 48.
  • the backside resist layer 46r is formed over the entire second substrate backside 41r.
  • the back side resist layer 46r is formed of an insulating material. Therefore, the second substrate 41 is electrically insulated from the heat sink 22.
  • a switching element 43 and a plurality of capacitors 44 are each mounted as the drive circuit element 42 on the second substrate surface 41s.
  • the switching element 43 is arranged within the switching element opening 46a. Therefore, the switching element 43 is mounted on the front side wiring 45s (see FIG. 9). More specifically, the switching element 43 is bonded to the front side wiring 45s using a conductive bonding material such as solder paste or Ag paste. It can also be said that the switching element 43 is arranged at the center of the second substrate surface 41s in the x direction.
  • the semiconductor light emitting device 32 and the switching device 43 are arranged apart from each other in the z direction.
  • the switching element 43 is formed into a flat plate shape. As shown in FIG. 7, the thickness TS of the switching element 43 is thicker than the thickness TL of the semiconductor light emitting element 32.
  • the shape of the switching element 43 viewed from the y direction is rectangular. In this embodiment, the shape of the switching element 43 when viewed from the y direction is a square. Note that the shape of the switching element 43 viewed from the y direction can be arbitrarily changed. In one example, the shape of the switching element 43 viewed from the y direction may be a rectangular shape in which the z direction is the longitudinal direction and the x direction is the lateral direction.
  • the size of the switching element 43 in the x direction is larger than the size of the semiconductor light emitting element 32 in the x direction.
  • the size of the switching element 43 in the x direction is smaller than twice the size of the semiconductor light emitting device 32 in the x direction.
  • the size of the switching element 43 in the y direction is larger than the size of the semiconductor light emitting element 32 in the y direction.
  • the size of the switching element 43 in the y direction is more than twice the size of the semiconductor light emitting element 32 in the y direction, and less than four times the size of the semiconductor light emitting device 32 in the y direction.
  • the source electrode 43S and the anode electrode 36 of the semiconductor light emitting element 32 are connected by a plurality of wires W1. Thereby, the source electrode 43S and the anode electrode 36 are electrically connected. Further, the source electrode 43S and the connecting portion 28A of the lead pin 23A are connected by one wire W2. Thereby, the source electrode 43S and the lead pin 23A are electrically connected. The gate electrode 43G and the connecting portion 28B of the lead pin 23B are connected by one wire W3. Further, the front side wiring 45s exposed from the wire opening 46c and the connection portion 28C of the lead pin 23C are connected by one wire W4. Thereby, the front side wiring 45s and the lead pin 23C are electrically connected.
  • the plurality of capacitors 44 are electronic components that cooperate with the switching element 43 to supply current to the semiconductor light emitting element 32. As shown in FIG. 2, each capacitor 44 is formed into a substantially rectangular parallelepiped shape. As shown in FIG. 6, the capacitor 44 has a rectangular shape when viewed from the y direction, with the z direction being the longitudinal direction and the x direction being the lateral direction. The plurality of capacitors 44 are arranged spaced apart from each other in the x direction. For this reason, the plurality of capacitors 44 are arranged so that the arrangement direction thereof is the short side direction of the capacitors 44.
  • the first electrode 44A of each capacitor 44 is bonded to the first mounting surface 24A using a conductive bonding material such as solder paste or Ag paste. Thereby, the first electrode 44A of each capacitor 44 is electrically connected to the heat sink 22. Since the cathode electrode 37 (see FIG. 8) of the semiconductor light emitting element 32 is electrically connected to the heat sink 22, it can be said that the first electrode 44A is electrically connected to the cathode electrode 37 via the heat sink 22.
  • the drain electrode 43D of the switching element 43 is electrically connected to the front side wiring 45s.
  • the anode electrode of diode D is electrically connected to the heat sink 22 (see FIG. 6) via lead pin 23D, for example, and the cathode electrode of diode D is electrically connected to source electrode 43S via lead pin 23A and wire W2. has been done.
  • the heat sink 22 is electrically connected to the cathode electrode 37 of the semiconductor light emitting element 32.
  • the source electrode 43S of the switching element 43 is electrically connected to the anode electrode 36 of the semiconductor light emitting element 32 by a wire W1. Therefore, the diode D is connected in antiparallel to the semiconductor light emitting element 32.
  • the semiconductor light emitting unit 100 includes a semiconductor light emitting device 10 and a heat sink 110 that radiates heat from the semiconductor light emitting device 10.
  • the semiconductor light emitting unit 100 further includes a circuit board 120 electrically connected to the semiconductor light emitting device 10.
  • the heat dissipation body 110 includes a heat dissipation base 130 and a cap cover section 140 that stands up from the heat dissipation base 130.
  • the heat sink 110 is made of a material containing, for example, stainless steel, Fe, Al, or Cu.
  • the base side surface 133 and the base side surface 134 are spaced apart from each other in the x direction.
  • Each of the base side surface 133 and the base side surface 134 is a flat surface extending along the yz plane.
  • the base side surface 135 and the base side surface 136 are spaced apart from each other in the z direction.
  • Each of the base side surface 135 and the base side surface 136 is a flat surface extending along the xy plane.
  • the cap cover portion 140 extends from the base surface 131 of the heat dissipation base 130 in the y direction. That is, the base surface 131 is a surface on which the cap cover portion 140 is erected.
  • the cap cover part 140 is formed into a flat plate shape with the z direction being the thickness direction.
  • the size of the cap cover part 140 in the x direction is smaller than the size of the heat dissipation base 130 in the x direction.
  • the cap cover part 140 has a first cover surface 141 and a second cover surface 142 facing oppositely to each other in the z direction.
  • the first cover surface 141 faces the same side as the base side surface 135, and the second cover surface 142 faces the same side as the base side surface 136. As shown in FIG. 13, in this embodiment, the first cover surface 141 is flush with the base side surface 135.
  • the cap cover part 140 has a through hole 143 that penetrates in the thickness direction (z direction).
  • the through hole 143 is circular when viewed from the z direction.
  • the inner diameter of the through hole 143 is equal to the outer diameter of the cap 50 of the semiconductor light emitting device 10.
  • the circuit board 120 is placed on the base surface 131 of the heat dissipation base 130.
  • the circuit board 120 is spaced apart from the base surface 131 of the heat dissipation base 130 on the side opposite to the base back surface 132 in the thickness direction (y direction) of the heat dissipation base 130 .
  • a gap is formed between circuit board 120 and base surface 131 in the y direction.
  • the circuit board 120 is formed into a flat plate shape with the thickness direction being in the y direction.
  • the circuit board 120 is arranged closer to the base side surface 135 than the base side surface 136 in the z direction.
  • the circuit board 120 is placed adjacent to the cap cover part 140.
  • Circuit board 120 is arranged parallel to base surface 131 of heat dissipation base 130 . As shown in FIG. 12, the size of the circuit board 120 in the x direction is larger than the size of the cap cover part 140 in the x direction.
  • the circuit board 120 for example, at least one of a diode D, a resistive element R, and a driver circuit PM of the laser system LS shown in FIG. 11 may be mounted.
  • the circuit board 120 includes a diode D, a resistance element R, and a driver circuit PM, respectively.
  • the semiconductor light emitting device 10 is attached to a cap cover section 140. More specifically, the cap cover portion 140 is connected to the side surface of the cap 50 (the outer peripheral surface of the cylindrical portion 51) of the semiconductor light emitting device 10 in a heat transferable manner.
  • the cap 50 is press-fitted into the through hole 143 of the cap cover part 140 from the second cover surface 142 side so that the cap cover part 140 is connected to the side surface of the cap 50 in a heat transferable manner.
  • the cap 50 may be loosely fitted into the through hole 143 so that the cap cover portion 140 is connected to the side surface of the cap 50 in a heat transferable manner. That is, the cap 50 may be inserted into the through hole 143 in a range where heat from the side surface of the cap 50 is transmitted to the cap cover part 140.
  • the side surface of the cap 50 is connected to the cap cover part 140 in a heat-transferable manner with the opening 53 facing in a direction intersecting the thickness direction (y direction) of the heat dissipation base part 130.
  • the side surface of the cap 50 is connected to the cap cover part 140 in a heat transferable manner with the opening part 53 facing in a direction perpendicular to the thickness direction (y direction) of the heat dissipation base part 130. More specifically, when the cap 50 is press-fitted into the through hole 143, the top plate portion 52 of the cap 50 faces the z direction. That is, the opening 53 formed in the top plate portion 52 opens toward the z direction.
  • the semiconductor light emitting unit 100 is configured such that the opening 53 (see FIG. 1) of the cap 50 faces sideways (z direction). Therefore, the semiconductor light emitting device 32 emits light in the z direction.
  • the inner surface of the through hole 143 is connected to the entire circumference of the side surface of the cap 50 so as to allow heat transfer. More specifically, the inner surface forming the through hole 143 covers the entire circumference of the side surface of the cap 50. That is, the entire circumference of the side surface of the cap 50 is press-fitted into the inner surface forming the through hole 143. Therefore, the side surface of the cap 50 is in contact with the inner surface forming the through hole 143 over its entire circumference.
  • the semiconductor light emitting device 10 is attached to the cap cover part 140 so that its thickness direction intersects with the thickness direction of the heat dissipation base part 130.
  • the semiconductor light emitting device 10 is attached to the cap cover part 140 so that its thickness direction is perpendicular to the thickness direction of the heat dissipation base part 130.
  • the base 21 is in contact with the cap cover part 140.
  • the entire surface of the base surface 21s of the base 21 exposed from the cap 50 is in contact with the second cover surface 142 of the cap cover section 140.
  • the side surface of the cap 50 is connected to the cap cover section 140 in a heat transferable manner, and the base 21 is connected to the cap cover section 140. Connected for heat transfer.
  • the thickness TCC of the cap cover portion 140 is thicker than the height dimension HCP of the cap 50. Therefore, the top plate portion 52 of the cap 50 is arranged closer to the second cover surface 142 with respect to the first cover surface 141 of the cap cover portion 140.
  • the thickness TCC of the cap cover part 140 can be defined by the distance between the first cover surface 141 and the second cover surface 142 in the z direction.
  • the height dimension HCP of the cap 50 can be defined by the distance between the base surface 21s of the base 21 and the top plate portion 52 of the cap 50 in the z direction.
  • An opening cover member 150 may be attached to the cap cover portion 140.
  • the opening cover member 150 is bonded to the first cover surface 141 of the cap cover portion 140 with an adhesive or the like.
  • the opening cover member 150 covers the through hole 143.
  • the opening cover member 150 is formed into a cylindrical shape with a bottom.
  • a bottom portion 151 of the opening cover member 150 is provided at a position away from the first cover surface 141.
  • An opening 152 is formed in this bottom portion 151 .
  • the opening 152 is formed at a position overlapping the through hole 143 when viewed from the z direction.
  • One or more lenses can be accommodated within the aperture cover member 150. Thereby, light from the semiconductor light emitting device 10 passes through the through hole 143 and the lens in the aperture cover member 150, and exits from the aperture 152 in the z direction.
  • the plurality of lead pins 23A to 23D of the semiconductor light emitting device 10 are mounted on the circuit board 120.
  • the lead pins 23A to 23D are mounted on an end portion of the circuit board 120 adjacent to the cap cover portion 140 in the z direction.
  • Each of the lead pins 23A to 23D is inserted into the circuit board 120 in the y direction by being bent.
  • the portions of each of the lead pins 23A to 23D inserted into the circuit board 120 are joined to the circuit board 120 with a conductive joining member such as solder paste.
  • each of the terminal portions 29A to 29D of the lead pins 23A to 23D includes a first portion extending in the z direction from the base 21, a second portion extending in the y direction and mounted on the circuit board 120, and a first portion. and a bent portion formed between the first portion and the second portion.
  • the thickness TCC of the cap cover portion 140 and the height dimension HCP of the cap 50 can be changed arbitrarily.
  • the thickness TCC of the cap cover portion 140 and the height dimension HCP of the cap 50 may be equal to each other.
  • the thickness TCC of the cap cover portion 140 may be thinner than the height dimension HCP of the cap 50.
  • the circuit board 120 is placed at a position overlapping the base 21 when viewed from the z direction.
  • the circuit board 120 is arranged at a position closer to the heat dissipation base 130 than the center of the base 21 in the y direction.
  • FIG. 15 shows a perspective structure of a semiconductor light emitting unit 100X of a comparative example.
  • the semiconductor light emitting unit 100X of the comparative example is mounted on the circuit board 120 such that the thickness direction of the circuit board 120 is the same as the light emission direction. Therefore, in the semiconductor light emitting unit 100X of the comparative example, each lead pin 23A to 23D is mounted in a through hole (not shown) formed in the circuit board 120 without being bent. Note that the semiconductor light emitting unit 100X of the comparative example includes the semiconductor light emitting device 10X of the comparative example shown in FIG.
  • FIG. 16 shows an example of the internal structure of a semiconductor light emitting device 10X of a comparative example.
  • the semiconductor light emitting device 10X of the comparative example is different from the semiconductor light emitting device 10 of the present embodiment in that the first substrate 31 is omitted and the semiconductor light emitting element 32 is mounted on the second substrate 41, and the semiconductor light emitting device 10X is different from the heat sink 22.
  • the main difference is that the stepped portion 25 is omitted.
  • components of the semiconductor light emitting device 10X of the comparative example that are common to the semiconductor light emitting device 10 of this embodiment are given the same reference numerals, and the explanation thereof will be omitted.
  • the main difference between the heat sink 22X in the semiconductor light emitting device 10X of the comparative example and the heat sink 22 (see FIG. 2) of the semiconductor light emitting device 10 of the present embodiment is that it does not have a stepped portion 25 (protruding portion 26). different.
  • the heat sink 22X has a mounting surface 24X. Since the heat sink 22X does not have the stepped portion 25, the mounting surface 24X is a flat surface along the xz plane.
  • the second substrate 41 is bonded to the mounting surface 24X using a conductive bonding material. On the second substrate surface 41s of the second substrate 41, a semiconductor light emitting element 32, a switching element 43, and four capacitors 44 are mounted.
  • the semiconductor light emitting element 32 is arranged closer to the tip surface 22a of the heat sink 22 than the switching element 43 is.
  • the semiconductor light emitting element 32 is arranged at a position overlapping the switching element 43 when viewed from the z direction. Similar to the semiconductor light emitting device 10 of the first embodiment, the four capacitors 44 are arranged two by two in the x direction with respect to the switching element 43.
  • the second substrate 41 includes first surface-side wiring and second surface-side wiring.
  • the first surface-side wiring and the second surface-side wiring are spaced apart from each other in the z direction.
  • the first surface-side wiring is arranged closer to the tip end surface 22a of the heat sink 22 with respect to the second surface-side wiring.
  • the semiconductor light emitting device 32 and the first electrodes 44A of each capacitor 44 are mounted on the first surface side wiring. Therefore, the cathode electrode 37 (see FIG. 8) of the semiconductor light emitting device 32 and the first electrode 44A of each capacitor 44 are electrically connected via the first surface side wiring.
  • the switching element 43 and the second electrode 44B of each capacitor 44 are mounted on the second surface side wiring. Therefore, the drain electrode 43D (see FIG. 8) of the switching element 43 and the second electrode 44B of each capacitor 44 are electrically connected via the second surface wiring.
  • FIG. 17 shows the heat transfer coefficient and semiconductor light emission of the semiconductor light emitting unit 100X of the comparative example when the frequency of the control signal that drives the switching element 43, that is, the switching frequency of the switching element 43, is changed to 10 kHz, 50 kHz, 100 kHz, and 200 kHz. The relationship with the temperature of the element 32 is shown.
  • FIG. 18 shows the relationship between the heat transfer coefficient of the semiconductor light emitting unit 100 of this embodiment and the temperature of the semiconductor light emitting element 32 when the switching frequency of the switching element 43 is changed to 10 kHz, 50 kHz, 100 kHz, and 200 kHz. .
  • FIGS. 17 and 18 a graph where the switching frequency of the switching element 43 is 10 kHz is shown by a two-dot chain line, a graph where the switching frequency is 50 kHz is shown with a one-dot chain line, a graph where the switching frequency is 100 kHz is shown with a broken line, and a graph where the switching frequency is 200 kHz is shown with a solid line. .
  • the semiconductor light emitting unit 100X of the comparative example when the switching frequencies of the switching element 43 are set to 50 kHz, 100 kHz, and 200 kHz in natural air cooling, the temperature of the semiconductor light emitting element 32 exceeds 100°C. Therefore, depending on the allowable temperature limit of the semiconductor light emitting element 32, the semiconductor light emitting unit 100X of the comparative example may not be able to allow the switching frequency of the switching element 43 to be 50 kHz or more in natural air cooling.
  • the heat radiation path of the semiconductor light emitting device 10X of the comparative example is mainly a path through which heat is transferred from the lead pins 23A to 23D to the circuit board 120, so that it is difficult for the semiconductor light emitting device 10X of the comparative example to radiate heat.
  • the semiconductor light emitting unit 100 of this embodiment even when the switching frequency of the switching element 43 is set to 200 kHz in natural air cooling, the temperature of the semiconductor light emitting element 32 is less than 60°C (50°C degree). Therefore, in the semiconductor light emitting unit 100 of this embodiment, it is possible to allow the switching frequency of the switching element 43 to be 200 kHz in natural air cooling. In this way, the semiconductor light emitting unit 100 of this embodiment has higher heat dissipation performance than the semiconductor light emitting unit 100X of the comparative example.
  • the semiconductor light emitting unit 100 of this embodiment has more heat radiation paths than the semiconductor light emitting unit 100X of the comparative example, it is considered that the semiconductor light emitting element 32 can easily radiate heat. Furthermore, since the thermal conductivity of the first substrate 31 is higher than that of the second substrate 41, it is considered that the heat of the semiconductor light emitting element 32 is easily transferred from the first substrate 31 to the heat sink 22. Therefore, the semiconductor light emitting unit 100 of this embodiment can make the switching frequency of the switching element 43 higher than that of the semiconductor light emitting unit 100X of the comparative example.
  • the graph in FIG. 19 shows the results of heat conduction analysis for natural air cooling, forced air cooling, and water cooling.
  • the ranges of heat transfer coefficients for natural air cooling, forced air cooling, and water cooling are similar to the graphs in FIGS. 17 and 18.
  • the pulse width of the control signal that turns on the switching element 43 is 2 nS
  • the peak optical output of the semiconductor light emitting element 32 is 500 W.
  • the temperature of Cu, Al, Fe, and stainless steel is approximately 40° C., so there is almost no temperature difference in the semiconductor light emitting element 32 between Cu, which has the highest thermal conductivity, and stainless steel, which has the lowest thermal conductivity. Further, in Cu, Al, and Fe, the temperature of the semiconductor light emitting device 32 does not vary greatly. Since the temperature of Fe in natural air cooling is approximately 70° C., any one of Cu, Al, and Fe can be used as the material constituting the heat sink 110 in natural air cooling. In forced air cooling and water cooling, stainless steel can also be used as a material constituting the heat sink 110.
  • FIG. 20 shows the relationship between the volume of the heat sink 110 (heat sink base 130) and the temperature of the semiconductor light emitting element 32.
  • Al is used as the material constituting the heat sink 110.
  • the heat transfer coefficient is changed to 5W/m 2 /K, 10W/m 2 /K, 100W/m 2 /K, and 1000W/m 2 /K, and the heat radiator 110 is It shows the temperature of the semiconductor light emitting element 32 when the volume is changed.
  • heat transfer coefficients of 5 W/m 2 /K and 10 W/m 2 /K correspond to natural air cooling
  • heat transfer coefficients of 100 W/m 2 /K correspond to forced air cooling.
  • a coefficient of 1000 W/m 2 /K corresponds to water cooling.
  • the graph with two-dot chain line is the case when the heat transfer coefficient is 1000 W/m 2 /K
  • the graph with one-dot chain line is the case when the heat transfer coefficient is 100 W/m 2 /K
  • the broken line is the graph when the heat transfer coefficient is 100 W/m 2 /K.
  • the graph with a solid line corresponds to a case where the heat transfer coefficient is 10 W/m 2 /K
  • the graph with a solid line corresponds to a case where the heat transfer coefficient is 5 W/m 2 /K.
  • the temperature of the semiconductor light emitting element 32 gradually increases as the volume decreases.
  • the volume of the heat radiating body 110 is 30000 mm 3 or more.
  • the thermal conductivity is, for example, 50 W/mK or more, even if the volume of the heat dissipation body 110 (heat dissipation base 130) is in the range of less than 30000 mm 3 , the semiconductor light emitting element It is considered that the temperature of No. 32 can be lower than 100°C.
  • FIG. 21 shows the results of heat conduction analysis when the semiconductor light emitting device 10X of the comparative example is applied to the semiconductor light emitting unit 100.
  • the heat conduction analysis results when the semiconductor light emitting device 10 of this embodiment is applied to the semiconductor light emitting unit 100 are shown in FIG. 18 as described above.
  • FIG. 21 shows the relationship between the heat transfer coefficient and the temperature of the semiconductor light emitting element 32 when the switching frequency of the switching element 43 is changed to 10 kHz, 50 kHz, 100 kHz, and 200 kHz.
  • the temperature of the semiconductor light emitting element 32 when the switching frequency of the switching element 43 is 10 kHz is almost the same between the semiconductor light emitting device 10X of the comparative example and the semiconductor light emitting device 10 of the present embodiment.
  • the switching frequency of the switching element 43 increases to 50 kHz, 100 kHz, and 200 kHz, the degree to which the temperature of the semiconductor light emitting element 32 in the semiconductor light emitting device 10 of this embodiment becomes lower than that of the semiconductor light emitting device 10X of the comparative example increases. .
  • the temperature of the semiconductor light emitting element 32 in the semiconductor light emitting device 10X of the comparative example is about 90°C
  • the temperature of the semiconductor light emitting element 32 becomes less than 60°C (approximately 50°C).
  • the temperature of the semiconductor light emitting element 32 in the semiconductor light emitting device 10 of this embodiment is lower by nearly 40 degrees Celsius than in the semiconductor light emitting device 10X of the comparative example.
  • the semiconductor light emitting device 10 includes a base 21 , a conductive heat sink 22 erected on the base 21 , and a first substrate 31 and a second substrate 41 attached to the heat sink 22 so as to be spaced apart from each other. , a semiconductor light emitting device 32 mounted on a first substrate 31, and a drive circuit element 42 mounted on a second substrate 41 and driving the semiconductor light emitting device 32.
  • the first substrate 31 on which the semiconductor light emitting element 32 is mounted and the second substrate 41 on which the drive circuit element 42 is mounted are attached to the heat sink 22 so as to be spaced apart from each other. Heat from the element 32 is transmitted to the heat sink 22 via the first substrate 31. In other words, the heat of the semiconductor light emitting device 32 is less likely to be transferred to the second substrate 41. Therefore, it is possible to suppress the heat of the semiconductor light emitting element 32 from affecting the drive circuit element 42.
  • the heat transfer coefficient of the first substrate 31 is higher than that of the second substrate 41. According to this configuration, the heat of the semiconductor light emitting element 32 is easily transmitted to the heat sink 22 via the first substrate 31. Therefore, the heat dissipation performance of the semiconductor light emitting device 10 can be improved.
  • the first substrate 31 is formed of aluminum nitride, alumina, copper-tungsten alloy, copper-aluminum nitride-copper, copper-diamond alloy, or silver-diamond alloy.
  • the heat of the semiconductor light emitting element 32 is easily transmitted to the heat sink 22 via the first substrate 31, and the semiconductor light emitting element 32 is caused to emit light due to the difference in linear expansion coefficient between the first substrate 31 and the semiconductor light emitting element 32. It is possible to reduce the force applied to the element 32 at the same time.
  • the drive circuit element 42 includes a capacitor 44 having a first electrode 44A and a second electrode 44B.
  • the first electrode 44A of the capacitor 44 is mounted on the first mounting surface 24A of the heat sink 22, and the second electrode 44B of the capacitor 44 is mounted on the second substrate 41.
  • the first electrode 44A of the capacitor 44 since the first electrode 44A of the capacitor 44 is mounted on the first mounting surface 24A of the heat sink 22, the first electrode 44A can emit semiconductor light through the first mounting surface 24A and the first substrate 31. It is electrically connected to the element 32. Therefore, compared to the case where the first electrode 44A of the capacitor 44 is mounted on the second substrate 41, the conductive path between the first electrode 44A and the semiconductor light emitting element 32 can be made shorter.
  • the second substrate 41 includes a second substrate surface 41s on which the drive circuit element 42 is mounted.
  • the first mounting surface 24A and the second substrate surface 41s are at the same position.
  • the capacitor 44 arranged so as to straddle the z-direction between the first mounting surface 24A and the second board surface 41s is largely tilted in the y-direction with respect to the z-direction when viewed from the x-direction. Instead, it can be mounted on the first mounting surface 24A and the second substrate surface 41s.
  • the first mounting surface 24A is configured as a flat surface in which the first region where the light emitting unit 30 is mounted and the second region where the capacitor 44 is mounted are flush with each other. According to this configuration, compared to a configuration in which a step is formed between the first region and the second region, the conductive path between the first electrode 44A of the capacitor 44 and the cathode electrode 37 of the semiconductor light emitting element 32 is can be shortened.
  • the semiconductor light emitting device 32 has a plurality of light emitting parts 32A. According to this configuration, the light intensity of the semiconductor light emitting element 32 can be increased since it has a plurality of light emitting parts 32A.
  • the semiconductor light emitting device 10 of this embodiment includes the first substrate 31 on which the semiconductor light emitting element 32 is mounted, the heat of the semiconductor light emitting element 32 is difficult to be transferred to the second substrate 41. Therefore, it is possible to both increase the light intensity of the semiconductor light emitting element 32 and suppressing the influence of the heat of the semiconductor light emitting element 32 on the drive circuit element 42.
  • the heat of the semiconductor light emitting element 32 is easily transmitted to the heat sink 22 via the first substrate 31. Therefore, it is possible to suppress the temperature of the semiconductor light emitting element 32 from becoming excessively high.
  • the first electrode 44A of the capacitor 44 When viewed from the x direction, the first electrode 44A of the capacitor 44 is placed at a position overlapping the first substrate 31 (semiconductor light emitting device 32). According to this configuration, the first electrode 44A and the first The conductive path between the substrate 31 (semiconductor light emitting device 32) can be shortened.
  • the through hole 34 is provided in the first substrate 31 at a position overlapping the semiconductor light emitting element 32. According to this configuration, the conductive path between the semiconductor light emitting element 32 and the heat sink 22 can be shortened.
  • the cap cover part 140 is configured to be connected to the side surface of the cap 50 in a heat transferable manner, and the cap cover part 140 includes a through hole 143 into which the cap 50 is press-fitted. According to this configuration, the heat of the semiconductor light emitting element 32 is efficiently transmitted from the cap 50 to the cap cover section 140. Therefore, it is possible to further suppress the temperature of the semiconductor light emitting element 32 from increasing excessively due to, for example, the switching element 43 being driven at a high frequency.
  • the circuit board 120 is arranged at a position adjacent to the cap cover part 140.
  • the plurality of lead pins 23A to 23D of the semiconductor light emitting device 10 are mounted on an end portion of the circuit board 120 adjacent to the cap cover portion 140.
  • the base 21 of the semiconductor light emitting device 10 and the circuit board 120 can be brought close to each other, and the lead pins 23A to 23D can be mounted on the circuit board 120 near the base 21. Therefore, the lengths of the terminal portions 29A to 29D of the lead pins 23A to 23D can be shortened.
  • the semiconductor light emitting device 10 of the second embodiment will be described with reference to FIGS. 22 to 25.
  • the semiconductor light emitting device 10 of this embodiment differs from the semiconductor light emitting device 10 of the first embodiment mainly in the configuration of the heat sink 22, the configuration of the second substrate 41, and the mounting manner of the capacitor 44.
  • the same reference numerals are given to the same components as in the first embodiment, and the description thereof will be omitted.
  • a recess 49 is formed at the end of the second substrate 41 and is recessed from the end.
  • the recess 49 is open toward the distal end surface 22a when viewed from the y direction. More specifically, the recess 49 is recessed from the second substrate side surface 41a toward the second substrate side surface 41b.
  • the recess 49 is formed in the center of the second substrate 41 in the x direction.
  • a region RG is formed by the recess 49 .
  • Region RG is a region surrounded by three second substrate side surfaces of second substrate 41 that constitute recess 49 . As shown in FIG. 23, the region RG has a rectangular shape when viewed from the y direction, with the x direction being the longitudinal direction and the z direction being the lateral direction.
  • the first surface-side wiring 61 is formed closer to the second substrate side surface 41b than the recess 49.
  • the first surface-side wiring 61 has a rectangular shape, when viewed from the y direction, the x direction is the longitudinal direction, and the z direction is the lateral direction.
  • the first surface-side wiring 61 is formed over most of the portion of the second substrate 41 that is closer to the second substrate side surface 41b than the recess 49.
  • each second surface-side wiring 62 When viewed from the x direction, each second surface-side wiring 62 is arranged at a position partially overlapping with the first substrate 31. In this embodiment, each second surface-side wiring 62 is disposed with respect to the first substrate 31 so as to be shifted to the side opposite to the tip surface 22a.
  • the second substrate 41 has a plurality of (six in this embodiment) first through holes 63 and a plurality (six in this embodiment) of second through holes 64.
  • Each first through hole 63 and each second through hole 64 penetrates the second substrate 41 in its thickness direction (y direction).
  • Each first through hole 63 and each second through hole 64 are formed of a conductive material.
  • each first through hole 63 and each second through hole 64 are formed of a material containing Cu.
  • the plurality of first through holes 63 are provided in the second substrate 41 closer to the second substrate side surface 41b than the recess 49 and at the center in the x direction.
  • the 16 first through holes 63 are arranged in a grid pattern, with four in the x direction and four in the z direction. Each first through hole 63 is electrically connected to the first surface side wiring 61.
  • a first heat dissipating material 65 is provided inside each first through hole 63. More specifically, the first heat dissipating material 65 is provided so as to fill the inside of each first through hole 63.
  • the first heat dissipating material 65 is made of, for example, a metal material.
  • the first heat dissipating material 65 is formed of a material containing Cu. That is, the first heat dissipating material 65 may be formed of the same material as the first through hole 63.
  • the plurality of second through holes 64 are formed at positions overlapping with the second surface-side wiring 62 when viewed from the y direction.
  • the plurality of second through holes 64 are formed closer to the second substrate side surface 41 a than the first surface side wiring 61 of the second substrate 41 .
  • three second through holes 64 are arranged on each side of the recess 49 in the x direction.
  • the plurality of second through holes 64 are aligned in the z direction and spaced apart from each other in the x direction.
  • Each second through hole 64 is electrically connected to the second front side wiring 62.
  • a second heat dissipation material 66 is provided inside each second through hole 64. More specifically, the second heat dissipating material 66 is provided so as to fill the inside of each second through hole 64 .
  • the second heat dissipating material 66 is made of, for example, a metal material.
  • the second heat dissipating material 66 is formed of a material containing Cu. That is, the second heat dissipating material 66 may be formed of the same material as the second through hole 64.
  • each of the first through holes 63 and the second through holes 64 can be changed arbitrarily.
  • the materials constituting the first heat radiating material 65 and the second heat radiating material 66 can be changed arbitrarily.
  • the first heat dissipating material 65 may be formed of a material different from that of the first through hole 63.
  • the second heat dissipating material 66 may be formed of a different material from that of the second through hole 64.
  • each of the first heat radiating material 65 and the second heat radiating material 66 may be formed of an insulating material.
  • the second substrate 41 has a front-side resist layer 67 that covers a part of the first front-side wiring 61 and a part of the second front-side wiring 62.
  • the front side resist layer 67 is formed of an insulating material.
  • the front side resist layer 67 has a switching element opening 67a, a plurality of (two in this embodiment) first capacitor openings 67b, and a plurality (two in this embodiment) of second capacitor openings. 67c, and a wire opening 67d.
  • the switching element opening 67a, each of the second capacitor openings 67c, and the wire opening 67d expose the first front-side wiring 61 from the front-side resist layer 67.
  • Each first capacitor opening 67b exposes the second surface-side wiring 62 from the surface-side resist layer 67.
  • the switching element opening 67a is formed at a position overlapping the recess 49 when viewed from the z direction.
  • the switching element opening 67a exposes each first through hole 63 and each first heat dissipation material 65.
  • the second capacitor opening 67c is formed distributed on both sides of the switching element opening 67a in the x direction.
  • the two second capacitor openings 67c are formed to be aligned with each other in the z-direction and spaced apart from each other in the x-direction.
  • the two second capacitor openings 67c are arranged at positions overlapping with the switching element openings 67a when viewed from the x direction.
  • the wire opening 67d is formed closer to the second substrate side surface 41b than the second capacitor opening 67c.
  • the wire opening 67d is arranged on one side in the x direction with respect to the switching element opening 67a.
  • the first capacitor opening 67b is formed closer to the second substrate side surface 41a than the switching element opening 67a.
  • the first capacitor openings 67b are formed distributed on both sides of the recess 49 in the x direction.
  • the two first capacitor openings 67b are formed to be aligned with each other in the z-direction and spaced apart from each other in the x-direction.
  • the two first capacitor openings 67b are formed at the same position in the x direction with respect to the two corresponding second capacitor openings 67c.
  • the switching element 43 is arranged within the switching element opening 67a. More specifically, the switching element 43 is bonded to the first surface wiring 61 exposed through the switching element opening 67a using a conductive bonding material. Thereby, the drain electrode 43D (see FIG. 8) of the switching element 43 is electrically connected to the first surface wiring 61.
  • the four capacitors 44 are dispersed and arranged two each on both sides of the recess 49 in the x direction.
  • the first electrode 44A of the capacitor 44 is arranged at a position overlapping the first capacitor opening 67b when viewed from the y direction.
  • the first electrode 44A is bonded to the second surface wiring 62 exposed through the first capacitor opening 67b using a conductive bonding material.
  • the first electrode 44A is electrically connected to the second surface wiring 62.
  • the second electrode 44B of the capacitor 44 is arranged at a position overlapping the second capacitor opening 67c when viewed from the y direction.
  • the second electrode 44B is bonded to the first surface wiring 61 exposed through the second capacitor opening 67c using a conductive bonding material.
  • the second electrode 44B is electrically connected to the first surface wiring 61. It can also be said that the second electrode 44B is electrically connected to the drain electrode 43D of the switching element 43. In this way, both the first electrode 44A and the second electrode 44B of each capacitor 44 are mounted on the second substrate 41.
  • the arrangement relationship between the switching element 43 and the four capacitors 44 can be said to be the same as in the first embodiment. Further, the circuit configuration of the semiconductor light emitting device 10 of this embodiment is the same as that of the first embodiment.
  • the second substrate 41 has two backside wirings 68, a first backside resist layer 69A, and a second backside resist layer 69B.
  • the two back side wirings 68 are formed in a distributed manner on both sides of the recess 49 in the x direction of the second substrate 41 .
  • Each back side wiring 68 is arranged at a position overlapping with the second front side wiring 62 (see FIG. 24) corresponding to the back side wiring 68 when viewed from the y direction.
  • the two back side wirings 68 are arranged to be aligned with each other in the z direction and spaced apart from each other in the x direction.
  • the back side wiring 68 is arranged at a position overlapping the recess 49 when viewed from the x direction.
  • the back side wiring 68 has a rectangular shape with the x direction being the longitudinal direction and the z direction being the lateral direction.
  • Each back side wiring 68 is electrically connected to a plurality of second through holes 64. Therefore, the back side wiring 68 and the second front side wiring 62, which are arranged at positions overlapping with each other when viewed from the y direction, are electrically connected by the plurality of second through holes 64.
  • the first back side resist layer 69A is formed closer to the second substrate side surface 41b than the recess 49.
  • the first back side resist layer 69A has a rectangular shape when viewed from the y direction, with the x direction being the longitudinal direction and the z direction being the lateral direction.
  • the first back side resist layer 69A is formed over most of the portion of the second substrate 41 that is closer to the second substrate side surface 41b than the recess 49.
  • the first back side resist layer 69A is arranged at a position overlapping the first front side wiring 61 when viewed from the y direction. Therefore, the first back side resist layer 69A covers the plurality of first through holes 63 and the plurality of first heat dissipating materials 65.
  • the second back side resist layer 69B has an opening 69BA.
  • the opening 69BA exposes the back side wiring 68, the second through hole 64, and the second heat dissipation material 66.
  • the first electrode 44A is electrically connected to the semiconductor light emitting element 32 via the second through hole 64, the back side wiring 68, and the first substrate 31.
  • the backside wiring 68 corresponds to a "pad electrically connected to a heat sink.”
  • the light emitting unit 30 when viewed from the y direction, the light emitting unit 30 is arranged so that at least a portion thereof enters the region RG while being separated from the second substrate 41. Therefore, when viewed from the y direction, the first substrate 31 can be said to be arranged such that at least a portion thereof enters the region RG while being separated from the second substrate 41. In this embodiment, the light emitting unit 30 is arranged so that a part of it enters the region RG when viewed from the y direction. For this reason, in this embodiment, the first substrate 31 is arranged so that a portion thereof enters the region RG.
  • the first substrate 31 includes a portion that protrudes toward the tip end surface 22a of the heat sink 22 with respect to the second substrate side surface 41a of the second substrate 41.
  • the distance G1 between the first substrate 31 and the tip surface 22a in the z direction is smaller than the distance G2 between the first substrate 31 and the bottom surface of the recess 49 of the second substrate 41 in the z direction.
  • the configurations of the first substrate 31 and the semiconductor light emitting device 32 are similar to those in the first embodiment. Therefore, the cathode electrode 37 (see FIG. 8) of the semiconductor light emitting device 32 is electrically connected to the heat sink 22. Further, the positional relationship of the first substrate 31 and the semiconductor light emitting device 32 with respect to the switching element 43 and the capacitor 44 is the same as in the first embodiment.
  • the semiconductor light emitting element 32 is arranged at the same position as the switching element 43 in the x direction, the semiconductor light emitting element 32 is arranged at a position overlapping with the switching element 43 when viewed from the z direction.
  • a recess 49 is formed at the end of the second substrate 41, recessed from the end.
  • the first substrate 31 is spaced apart from the second substrate 41 and is arranged so that at least a portion thereof enters the region RG formed by the recess 49 .
  • the drive circuit element 42 includes a capacitor 44 having a first electrode 44A and a second electrode 44B. Both the first electrode 44A and the second electrode 44B of the capacitor 44 are mounted on the second substrate 41.
  • the second substrate 41 includes a second through hole 64 that electrically connects the first electrode 44A of the capacitor 44 and the heat sink 22.
  • the conductive path between the first electrode 44A and the heat sink 22 can be shortened compared to a configuration in which the first electrode 44A of the capacitor 44 and the heat sink 22 are electrically connected, for example, by a wire. can.
  • the diameter of the second through hole 64 tends to be larger than the diameter of the wire. Therefore, inductance can be reduced by making the diameter of the second through hole 64 larger than the diameter of the wire.
  • the first electrode 44A of each capacitor 44 is arranged closer to the switching element 43 than the first mounting surface 24A of the heat sink 22. That is, the first electrode 44A is arranged closer to the switching element 43 than the first substrate 31 (semiconductor light emitting element 32).
  • the second electrode 44B of each capacitor 44 is arranged at a position overlapping the switching element 43 when viewed from the x direction. In this way, each capacitor 44 is entirely disposed closer to the switching element 43 with respect to the semiconductor light emitting element 32. In other words, the entire semiconductor light emitting element 32 is arranged closer to the tip surface 22a of the heat sink 22 than each capacitor 44 is.
  • the second substrate 41 has front side wiring 71 and connection wiring 72.
  • the front side wiring 71 and the connection wiring 72 are formed on the second substrate surface 41s of the second substrate 41. Both the front side wiring 71 and the connection wiring 72 are formed of copper foil, for example.
  • the front side wiring 71 is arranged closer to the base 21 (see FIG. 26) of the second substrate 41. When viewed from the y direction, the front side wiring 71 has a rectangular shape with the x direction being the longitudinal direction and the z direction being the lateral direction.
  • the second substrate 41 has a plurality of (16 in this embodiment) through holes 73.
  • Each through hole 73 penetrates the second substrate 41 in its thickness direction (y direction).
  • Through hole 73 is formed of a conductive material.
  • each through hole 73 is formed of a material containing Cu.
  • the plurality of through holes 73 are provided in the second substrate 41 closer to the base 21 (see FIG. 26) than the connection wiring 72 and at the center in the x direction.
  • the 16 through holes 73 are arranged in a grid pattern, with four in the x direction and four in the z direction. Each through hole 73 is electrically connected to the front side wiring 71.
  • a heat dissipating material 74 is provided inside each through hole 73. More specifically, the heat dissipating material 74 is provided so as to fill the inside of each through hole 73.
  • the heat dissipating material 74 is made of, for example, a metal material.
  • the heat dissipating material 74 is formed of a material containing Cu. That is, the heat dissipating material 74 may be formed of the same material as the through hole 73.
  • the switching element opening 75a is formed at a position overlapping the central portion of the front-side wiring 71 in the x-direction when viewed from the z-direction.
  • the switching element opening 75a exposes the front side wiring 71, the plurality of through holes 73, and the heat dissipation material 74.
  • the two second capacitor openings 75c are formed distributed on both sides of the switching element opening 75a in the x direction.
  • the two second capacitor openings 75c are formed to be aligned with each other in the z-direction and spaced apart from each other in the x-direction.
  • Each of the second capacitor openings 75c is formed at the end closer to the connection wire 72 of both ends of the front surface wiring 71 in the z direction.
  • the two first capacitor openings 75b are formed closer to the first mounting surface 24A than the switching element opening 75a.
  • the two first capacitor openings 75b are arranged closer to the first mounting surface 24A than the second capacitor opening 75c.
  • the two first capacitor openings 75b are formed distributed on both sides of the switching element opening 75a in the x direction.
  • the two first capacitor openings 75b are formed to be aligned with each other in the z-direction and spaced apart from each other in the x-direction.
  • the two first capacitor openings 75b are formed at the same position in the x direction with respect to the two corresponding second capacitor openings 75c.
  • a part of the second wire opening 75e closer to the switching element opening 75a overlaps with the first capacitor opening 75b when viewed from the x direction.
  • the size of the second wire opening 75e in the x direction is larger than the size of the semiconductor light emitting element 32 (first substrate 31) in the x direction.
  • the first mounting surface 24A of the heat sink 22 and the connection wiring 72 are connected by a wire W5.
  • the first end of the wire W5 is joined to the first attachment surface 24A, and the second end of the wire W5 is connected to the connection wiring 72 exposed through the second wire opening 75e of the front side resist layer 75. It is joined.
  • the wires W5 are arranged on both sides of the four wires W1 connecting the semiconductor light emitting element 32 and the switching element 43 in the x direction.
  • the wires W5 are arranged on both sides of the semiconductor light emitting device 32 in the x direction, separated from the semiconductor light emitting device 32, when viewed from the y direction.
  • the wire W5 is arranged between the semiconductor light emitting element 32 (first substrate 31) and the capacitor 44 in the x direction when viewed from the y direction. Note that the number of wires W5 can be changed arbitrarily.
  • the second back side resist layer 77 is arranged closer to the tip end surface 22a of the heat sink 22 than the first back side resist layer 76 of the second substrate 41.
  • the second back side resist layer 77 is spaced apart from the first back side resist layer 76 in the z direction.
  • the second back side resist layer 77 is arranged at a position overlapping the connection wiring 72 (see FIG. 28) when viewed from the y direction.
  • the size of the second back side resist layer 77 in the z direction is smaller than the size of the first back side resist layer 76 in the z direction.
  • the first back side resist layer 76 and the second back side resist layer 77 may be configured as a back side resist layer formed integrally. In this case, the back side resist layer may be formed over the entire second substrate back surface 41r of the second substrate 41, for example.
  • the light emitting unit 30 is attached to the first attachment surface 24A.
  • the attachment position of the light emitting unit 30 to the heat sink 22 is the same as in the first embodiment.
  • the configuration of the light emitting unit 30 is the same as that in the first embodiment. That is, the cathode electrode 37 (see FIG. 8) of the semiconductor light emitting device 32 is electrically connected to the heat sink 22. Therefore, the first electrode 44A of the capacitor 44 is electrically connected to the cathode electrode 37 via the connection wiring 72, the wire W5, and the heat sink 22. Note that the circuit configuration of the semiconductor light emitting device 10 of this embodiment is the same as that of the first embodiment.
  • connection wiring 72 and the first mounting surface 24A of the heat sink 22 are connected by the wire W5, but the electrical connection mode between the connection wiring 72 and the first mounting surface 24A is not limited to this.
  • connection wiring 72 and the first mounting surface 24A may be electrically connected by a connection member such as a clip or a ribbon instead of the wire W5.
  • the first electrode 44A The conductive path between the semiconductor light emitting device 32 and the semiconductor light emitting device 32 can be shortened. Further, the connection structure between the connection wiring 72 and the heat sink 22 can be simplified.
  • FIG. 30 shows a perspective structure inside the semiconductor light emitting device 10 of this embodiment.
  • the cap 50 is omitted from the semiconductor light emitting device 10 in FIG. 30.
  • the connection structure between the cap 50 and the wires W1 to W4 is the same as in the first embodiment.
  • FIG. 31 shows a cross-sectional structure of the heat sink 22, the light emitting unit 30, and the drive unit 40 in the semiconductor light emitting device 10 of FIG. 30, taken along the yz plane.
  • wires W1 to W4 are omitted in FIG. 31.
  • the heat sink 22 is formed of a material whose linear expansion coefficient is closer to that of the semiconductor light emitting element 32 than in the first embodiment.
  • the heat sink 22 may be formed of a different material from the base 21.
  • the heat sink 22 is made of a material having a smaller coefficient of linear expansion than Cu.
  • the heat sink 22 may be formed of a material containing Fe.
  • the heat sink 22 may be made of, for example, Fe or an alloy of Fe and nickel (Ni). Note that the material constituting the heat sink 22 can be changed arbitrarily.
  • the semiconductor light emitting device 10 includes a base 21 , a conductive heat sink 22 erected on the base 21 , a second substrate 41 attached to the heat sink 22 , and a second substrate 41 of the heat sink 22 .
  • the semiconductor light emitting device 32 includes semiconductor light emitting devices 32 directly attached to different positions, and a drive circuit device 42 that is at least partially mounted on the second substrate 41 and drives the semiconductor light emitting devices 32.
  • the semiconductor light emitting device 32 is directly attached to the heat sink 22 without using the first substrate 31 (see FIG. 2). Therefore, the heat of the semiconductor light emitting element 32 is easily transmitted to the heat sink 22.
  • a semiconductor light emitting device 10 according to a fifth embodiment will be described with reference to FIGS. 32 and 33.
  • the semiconductor light emitting device 10 of this embodiment differs from the semiconductor light emitting device 10 of the second embodiment mainly in that the first substrate 31 is omitted.
  • the same reference numerals are given to the same components as in the first embodiment, and the description thereof will be omitted.
  • the semiconductor light emitting element 32 is arranged so that at least a portion thereof enters the region RG while being separated from the second substrate 41. In this embodiment, a portion of the semiconductor light emitting element 32 enters the region RG.
  • FIG. 34 shows a perspective structure inside the semiconductor light emitting device 10 of this embodiment.
  • the cap 50 is omitted from the semiconductor light emitting device 10 in FIG. 34.
  • the connection structure between the cap 50 and the wires W1 to W5 is the same as in the third embodiment.
  • FIG. 35 shows a cross-sectional structure of the heat sink 22, the light emitting unit 30, and the drive unit 40 in the semiconductor light emitting device 10 of FIG. 34, taken along the yz plane.
  • wires W1 to W5 are omitted in FIG. 35.
  • the heat sink 22 is formed of a material whose linear expansion coefficient is closer to that of the semiconductor light emitting element 32 than in the third embodiment.
  • the heat sink 22 may be formed of a different material from the base 21.
  • the heat sink 22 is made of a material having a smaller coefficient of linear expansion than Cu.
  • the heat sink 22 may be formed of a material containing Fe.
  • the heat sink 22 may be made of, for example, Fe or an alloy of Fe and nickel (Ni). Note that the material constituting the heat sink 22 can be changed arbitrarily. According to the semiconductor light emitting device 10 of this embodiment, the same effect as (4-1) of the fourth embodiment can be obtained.
  • the position of the first mounting surface 24A of the heat sink 22 in the y direction with respect to the second mounting surface 24B can be changed arbitrarily.
  • the position of the first mounting surface 24A with respect to the second mounting surface 24B in the y direction may be different from the position of the second substrate surface 41s of the second board 41 with respect to the second mounting surface 24B in the y direction. That is, the first mounting surface 24A may be arranged closer to the second mounting surface 24B than the second substrate surface 41s in the y direction. Further, the first mounting surface 24A may be arranged further away from the second mounting surface 24B than the second substrate surface 41s in the y direction.
  • the first mounting surface 24A is such that the first area where the light emitting unit 30 is mounted and the second area where the capacitor 44 is mounted are flush with each other.
  • the position of the first region in the y direction with respect to the second mounting surface 24B and the position of the second region with respect to the second mounting surface 24B in the y direction may be different from each other.
  • the first region may be arranged closer to the second mounting surface 24B than the second region in the y direction. In this case, the position of the second region in the y direction with respect to the second mounting surface 24B may be the same as the position of the second substrate surface 41s of the second substrate 41 with respect to the second mounting surface 24B in the y direction.
  • the protrusion 26 may be omitted from the heat sink 22. That is, the heat sinks 22 of the second and fifth embodiments may be used.
  • the configuration of the mounting surface 24 of the heat sink 22 can be arbitrarily changed.
  • the mounting surface 24 includes a first region where the light emitting unit 30 is mounted and a second region where the drive unit 40 is mounted. The first region may protrude in the y direction with respect to the second region. That is, the first region may be located closer to the second substrate surface 41s of the second substrate 41 than the second region.
  • the length of the first substrate 31 in the x direction can be changed arbitrarily.
  • the first substrate 31 may extend to a position overlapping each capacitor 44 when viewed from the z direction.
  • the protrusion 26 (see FIG. 7) may be omitted from the heat sink 22.
  • Heat sink 22 includes a mounting surface 24 as in the second embodiment. Both the first substrate 31 and the second substrate 41 are attached to the mounting surface 24.
  • the position of the first board surface 31s of the first board 31 in the y direction with respect to the mounting surface 24 and the position of the second board surface 41s of the second board 41 with respect to the mounting surface 24 in the y direction are the same. You can.
  • the first electrode 44A of each capacitor 44 is mounted on the first substrate surface 31s of the first substrate 31.
  • the second electrode 44B of each capacitor 44 is mounted on the second substrate surface 41s of the second substrate 41.
  • connection wiring 72 includes a first wiring that is electrically connected to the first electrodes 44A of two capacitors 44 arranged on one side in the x direction with respect to the switching element 43, and It may also include a second wiring electrically connected to the first electrodes 44A of the two capacitors 44 arranged on the other side in the x direction.
  • the first wiring and the second wiring are spaced apart from each other in the x direction.
  • a plurality of wires W5 are provided so as to be connected to each of the first wiring and the second wiring.
  • the first substrate 31 may extend to a position where it overlaps at least one of the plurality of capacitors 44 when viewed from the z direction.
  • each of the materials constituting the first substrate 31 and the materials constituting the second substrate 41 can be changed arbitrarily.
  • the second substrate 41 may be made of a material with high heat transfer coefficient, such as alumina. In this case, the heat transfer coefficient of the first substrate 31 may be equal to the heat transfer coefficient of the second substrate 41.
  • the first substrate 31 may be a glass epoxy substrate similarly to the second substrate 41.
  • the first substrate 31 may have a through hole 34 and a heat dissipation material 35.
  • the heat of the semiconductor light emitting element 32 is more easily transmitted to the heat sink 22 than to the second substrate 41 due to the through hole 34 and the heat dissipation material 35 . Therefore, the influence of the heat of the semiconductor light emitting element 32 on the drive circuit element 42 can be reduced.
  • the through holes 47 and the heat dissipation material 48 may be omitted from the second substrate 41.
  • the back side resist layer 46r first back side resist layers 69A, 76 and second back side resist layers 69B, 77
  • the back side resist layer 46r may be omitted from the second substrate 41.
  • the recess 49 may be omitted from the second substrate 41. That is, the second substrate 41 may have a rectangular shape when viewed from the y direction, with the x direction being the longitudinal direction and the z direction being the lateral direction. In this case, the light emitting unit 30 is arranged closer to the tip surface 22a of the heat sink 22 than the second substrate 41 is.
  • the configuration of the drive circuit element 42 can be changed arbitrarily.
  • the number of capacitors 44 may be two, or five or more. Further, either the capacitor 44 or the switching element 43 may be omitted.
  • drive circuit element 42 includes switching element 43 .
  • the capacitor 44 is provided outside the semiconductor light emitting device 10.
  • the capacitor 44 may be arranged on one side of the switching element 43 in the x direction.
  • the switching element 43 may be a horizontally structured MOSFET.
  • a source electrode 43S, a drain electrode 43D, and a gate electrode 43G are formed on the switching element surface 43s of the switching element 43.
  • the drive circuit element 42 may include at least one of the diode D and the resistance element R of the laser system LS.
  • the diode D when the drive circuit element 42 includes a diode D, the diode D may be mounted on the second substrate surface 41s of the second substrate 41, for example.
  • the drive circuit element 42 includes a resistance element R the resistance element R may be mounted on the second substrate surface 41s of the second substrate 41, for example.
  • the drive circuit element 42 includes both the diode D and the resistance element R, each of the diode D and the resistance element R may be mounted on the second substrate surface 41s of the second substrate 41, for example.
  • the end portion of the cylindrical portion 51 on the side that contacts the base 21 may have a flange portion.
  • the flange portion is formed, for example, over the entire circumference of the cylindrical portion 51.
  • the transparent plate 54 may be omitted.
  • the cylindrical part 51 and the top plate part 52 of the cap 50 may be formed separately. In this case, the cylindrical portion 51 and the top plate portion 52 are joined to each other by adhesive or welding.
  • the inner surface of the through hole 143 of the cap cover portion 140 of the heat sink 110 and the cap 50 of the semiconductor light emitting device 10 may be in partial contact in the circumferential direction of the cap 50.
  • the through hole 143 of the cap cover part 140 may have an opening that does not cover the cap 50 in the circumferential direction of the cap 50.
  • the diameter of the through hole 143 of the cap cover part 140 may be larger than the outer diameter of the cap 50. That is, the cap 50 may be inserted into the through hole 143.
  • a heat radiating member 160 is interposed between the cylindrical portion 51 of the cap 50 and the inner surface forming the through hole 143.
  • the heat dissipation member 160 may be made of, for example, a known thermally conductive compound or a heat conductive sheet (heat dissipation sheet).
  • FIG. 38 is a view seen from the first cover surface 141 of the cap cover part 140 with the opening cover member 150 (see FIG. 37) omitted.
  • the heat radiating member 160 may be interposed between the cylindrical portion 51 of the cap 50 and the inner surface of the through hole 143 over the entire circumference of the cylindrical portion 51 of the cap 50.
  • the heat of the semiconductor light emitting device 10 is easily transmitted from the cap 50 to the cap cover part 140 via the heat radiating member 160. Thereby, it is possible to suppress the temperature of the semiconductor light emitting device 10 from becoming excessively high.
  • the heat radiating member 160 is interposed between the cylindrical portion 51 of the cap 50 and the inner surface of the through hole 143 over the entire circumference of the cylindrical portion 51 of the cap 50, so that the heat of the semiconductor light emitting device 10 is transferred to the cap 50. This makes it easier for the heat to be transmitted to the cap cover part 140 via the heat radiating member 160.
  • heat radiating member 160 may be provided partially in the circumferential direction of the cylindrical portion 51 of the cap 50. Further, the heat radiation member 160 may be partially provided in the height direction (z direction) of the cylindrical portion 51 of the cap 50.
  • the base 21 and the cap cover part 140 of the semiconductor light emitting device 10 may be separated from each other.
  • the opening cover member 150 may be omitted from the semiconductor light emitting unit 100.
  • the circuit board 120 may be arranged so as to be in contact with the heat dissipation base 130.
  • the heat dissipation base 130 may have, for example, an accommodation recess that accommodates the terminal portions 29A to 29D of the plurality of lead pins 23A to 23D of the semiconductor light emitting device 10.
  • the terminal portions 29A to 29D can be separated from the heat dissipation base 130 by the accommodation recess.
  • the semiconductor light emitting unit 100 may include the semiconductor light emitting device 10X shown in FIG. 16. Since the configuration of the cap 50 and the base 21 is the same as that of the semiconductor light emitting unit 100 of the first embodiment, the effects (1-14) to (1-19) of the first embodiment can also be obtained with this configuration. . In this manner, in the semiconductor light emitting unit 100, the semiconductor light emitting element 32 does not need to be mounted on a substrate (first substrate 31) different from the second substrate 41.
  • a and B should be understood to mean “A only, or B only, or both A and B.”
  • the term “on” includes the meanings of “on” and “above” unless the context clearly dictates otherwise. Therefore, the expression “A is formed on B” means that in each of the above embodiments, A can be placed directly on B by contacting B, but as a modification, A can be placed directly on B without contacting B. It is contemplated that it may be placed above the. That is, the term “on” does not exclude structures in which other members are formed between A and B.
  • the z direction used in this disclosure does not necessarily have to be the vertical direction, nor does it need to completely coincide with the vertical direction. Therefore, various structures according to the present disclosure are not limited to "up” and “down” in the z direction described herein to be “up” and “down” in the vertical direction.
  • the x direction may be a vertical direction
  • the y direction may be a vertical direction.
  • the first substrate (31) includes a first base material (31A),
  • the difference between the linear expansion coefficient of the first base material (31A) and the linear expansion coefficient of the semiconductor light emitting element (32) is the linear expansion coefficient of the heat sink (22) and the linear expansion coefficient of the semiconductor light emitting element (32).
  • the semiconductor light emitting device according to appendix A1 or A2 wherein the difference is smaller than the difference between the semiconductor light emitting device and the semiconductor light emitting device according to appendix A1 or A2.
  • the semiconductor light emitting device (32) includes an anode electrode (36) and a cathode electrode (37), The semiconductor light emitting device according to any one of appendices A1 to A7, wherein the first substrate (31) includes a through hole (34) that electrically connects the cathode electrode (36) and the heat sink (22). .
  • the second substrate (41) includes a substrate surface (41s) on which the drive circuit element (42) is mounted,
  • Appendix A10 The semiconductor light emitting device according to any one of Appendices A1 to A5, wherein the heat sink (22) includes a mounting surface (24) to which both the first substrate (31) and the second substrate (41) are attached. .
  • a recess (49) recessed from the end is formed at the end of the second substrate (41),
  • the first substrate (31) is spaced apart from the second substrate (41) and is arranged so that at least a portion thereof enters a region (RG) formed by the recess (49).
  • the drive circuit element (42) includes a capacitor (44) having a first electrode (44A) and a second electrode (44B), Both the first electrode (44A) and the second electrode (44B) of the capacitor (44) are mounted on the second substrate (41),
  • connection wiring (72) and the heat sink (22) are connected by a wire (W5).
  • Appendix A16 The semiconductor light emitting device according to any one of appendices A1 to A15, wherein the semiconductor light emitting element (32) has a plurality of light emitting parts (32A).
  • [Appendix A17] a cap attached to the base (21) and covering the heat sink (22), the first substrate (31), the second substrate (41), the semiconductor light emitting element (32), and the drive circuit element (42); Further comprising (50), The semiconductor light emitting device according to any one of appendices A1 to A16, wherein the cap (50) has an opening (53) that can emit light from the semiconductor light emitting element (32).
  • Appendix A19 The semiconductor light emitting device according to appendix A18, wherein the semiconductor light emitting element (32) is bonded to the heat sink (22) with a conductive bonding material.
  • Appendix A20 The semiconductor light emitting device according to appendix A18 or A19, wherein the drive circuit element (42) includes a switching element (43) and a capacitor (44).
  • the heat sink (22) is a second mounting surface (24B) to which the board (41) is attached; a first mounting surface (24A) formed closer to the tip of the heat sink (22) than the second mounting surface (24B) and to which the semiconductor light emitting element is directly attached; The first mounting surface (24A) protrudes from the second mounting surface (24B) in the thickness direction (y direction) orthogonal to the direction in which the heat sink is erected (z direction).
  • the semiconductor light emitting device according to any one of the above.
  • the drive circuit element (42) includes a capacitor (44) having a first electrode (44A) and a second electrode (44B), The first electrode (44A) of the capacitor (44) is mounted on the first mounting surface (24A), The semiconductor light emitting device according to appendix A21, wherein the second electrode (44B) of the capacitor (44) is mounted on the substrate (41).
  • the substrate (41) includes a substrate surface (41s) on which the drive circuit element (42) is mounted,
  • a recess (49) recessed from the end is formed at the end of the substrate (41),
  • the semiconductor light emitting element (32) is arranged so that at least a portion thereof enters a region (RG) formed by the recess (49) while being separated from the substrate (41).
  • the drive circuit element (42) includes a capacitor (44) having a first electrode (44A) and a second electrode (44B), Both the first electrode (44A) and the second electrode (44B) of the capacitor (44) are mounted on the substrate (41), The semiconductor light emitting device according to appendix A24 or A25, wherein the substrate (41) includes a through hole (64) that electrically connects the first electrode (44A) of the capacitor (44) and the heat sink (22). .
  • the substrate (41) includes a pad (68) electrically connected to the heat sink (22),
  • the first electrode (44A) of the capacitor (44) is electrically connected to the semiconductor light emitting element (32) via the through hole (64), the pad (68), and the heat sink (22).
  • the semiconductor light emitting device according to Appendix A26.
  • the drive circuit element (42) is a switching element (43); a capacitor (44) having a first electrode (44A) and a second electrode (44B);
  • the semiconductor light emitting element (32) and the switching element (43) are arranged to be spaced apart from each other in the direction in which the heat sink (22) is erected (z direction), A portion of the substrate (41) between the semiconductor light emitting element (32) and the switching element (43) in the upright direction (z direction) is provided with a portion for electrically connecting to the heat sink (22).
  • connection wiring (72) is provided, The semiconductor light emitting device according to any one of appendices A18 to A23, wherein the first electrode (44A) of the capacitor (44) is mounted on the connection wiring (72).
  • connection wiring (72) and the heat sink (22) are connected by a wire (W5).
  • Appendix A30 The semiconductor light emitting device according to any one of appendices A18 to A29, wherein the semiconductor light emitting element (32) has a plurality of light emitting parts (32A).
  • Appendix A31 further comprising a cap (50) attached to the base (21) and covering the heat sink (22), the substrate (41), the semiconductor light emitting element (32), and the drive circuit element (42),
  • the semiconductor light emitting device according to any one of appendices A18 to A30, wherein the cap (50) has an opening (53) through which light from the semiconductor light emitting element (32) can be emitted.
  • Appendix A32 The semiconductor light emitting device according to appendix A8, wherein the first substrate (31) includes a heat dissipating material (35) provided in the through hole (34).
  • a semiconductor light emitting device (10) according to any one of Appendices A1 to A32, A semiconductor light emitting unit (100) comprising: a heat radiator (110) to which the semiconductor light emitting device (10) is attached.
  • the semiconductor light emitting device (10) has an opening (53) that opens in one direction, and a side surface facing in a direction intersecting the one direction, and the semiconductor light emitting device (32) and the drive circuit element (42). )
  • the heat sink (110) is a plate-shaped heat dissipation base (130);
  • the cap (50) stands upright from the heat dissipation base (130), with the opening (53) facing a direction (z direction) intersecting the thickness direction (y direction) of the heat dissipation base (130).
  • a cap cover part (140) connected to the side surface of the cap cover part (140) in a heat transferable manner;
  • the semiconductor light emitting unit according to appendix A34.
  • the heat dissipation base (130) includes a base surface (131) on which the cap cover part (140) is erected,
  • the semiconductor light emitting unit includes a circuit board (120) arranged parallel to the base surface (131) of the heat dissipation base (130),
  • the semiconductor light emitting device (10) includes a plurality of lead pins protruding from the base (21) toward the side opposite to the cap (50) in the thickness direction (z direction) of the plate-shaped base (21). (23A to 23D),
  • the semiconductor light emitting device (10) is arranged in the cap cover part (140) so that the thickness direction (z direction) of the base (21) intersects the thickness direction (y direction) of the heat dissipation base (130).
  • the semiconductor light emitting unit according to appendix A35, wherein the semiconductor light emitting unit is mounted on the circuit board (120) with each of the plurality of lead pins (23A to 23D) bent.
  • the cap cover part (140) is connected to a side surface of the cap (50) in a heat transfer manner, and the cap cover part (140) includes a through hole (143) into which the cap (50) is press-fitted.
  • the semiconductor light emitting unit according to appendix A35 or A36.
  • the cap cover part (140) includes a through hole (143) into which the cap (50) is inserted, The cap cover part (140) is connected to the side surface of the cap (50) in a heat transferable manner, and a heat dissipation member (160) is provided between the inner surface forming the through hole (143) and the side surface of the cap. ) is present in the semiconductor light emitting unit according to appendix A35 or A36.
  • Appendix A39 The semiconductor light emitting unit according to appendix A37 or A38, wherein the inner surface forming the through hole (143) is connected to the side surface of the cap (50) over the entire circumference in a heat transferable manner.
  • Appendix A42 The semiconductor light emitting unit according to any one of appendices A35 to A41, wherein the cap cover portion (140) is in contact with the base (21).
  • the semiconductor light emitting device (10) includes: a semiconductor light emitting device (32); a cap (50) having an opening (53) opening in one direction and a side surface facing in a direction intersecting the one direction, and covering the semiconductor light emitting element (32);
  • the heat sink (110) is a plate-shaped heat dissipation base (130);
  • the cap (50) stands upright from the heat dissipation base (130), with the opening (53) facing a direction (z direction) intersecting the thickness direction (y direction) of the heat dissipation base (130).
  • a cap cover part (140) connected to the side surface of the cap cover part (140) in a heat transferable manner;
  • the cap cover part (140) is connected to a side surface of the cap (50) in a heat transfer manner, and the cap cover part (140) includes a through hole (143) into which the cap (50) is press-fitted.
  • the semiconductor light emitting device (10) includes a drive circuit element (42) configured to drive the semiconductor light emitting element (32), The semiconductor light emitting unit according to any one of appendices B1 to B11, wherein the cap (50) covers the drive circuit element (42).
  • Second Capacitor opening 75d ...First wire opening 75e...Second wire opening 76...First back side resist layer 77...Second back side resist layer 100...Semiconductor light emitting unit 100X...Semiconductor light emitting unit of comparative example 110 ...Heat dissipation body 120...Circuit board 130...Heat dissipation base 131...Base surface 132...Base back surface 133-136...Base side surface 140...Cap cover section 141...First cover surface 142...Second cover surface 143...Through hole 150...Opening cover Member 151... Bottom 152... Opening 160... Heat dissipation member LS... Laser system D... Diode R... Resistance element DV... Driving power supply PM...
  • Driver circuit RG Area W1 to W5... Wire DB... Second mounting surface and second substrate Distance between the two substrate surfaces in the y direction DH...Distance between the second mounting surface and the first mounting surface in the y direction G1...Distance between the first substrate and the tip surface of the heat sink G2...First substrate Distance between and the bottom of the concave part of the second board HB...Height of the second board from the mounting surface HC1...Height of the capacitor from the first mounting surface HC2...Height of the capacitor from the surface of the second board HCP ...Height dimension of the cap HL1...Height of the semiconductor light emitting element from the first mounting surface HL2...Height of the semiconductor light emitting element from the mounting surface HR...Depth of the recess HS...Height of the switching element from the second substrate surface LR...

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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Led Device Packages (AREA)
PCT/JP2023/022089 2022-06-20 2023-06-14 半導体発光装置 Ceased WO2023248895A1 (ja)

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Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895884A (ja) * 1981-12-01 1983-06-07 Canon Inc レ−ザユニツト
JPS5925292A (ja) * 1982-07-30 1984-02-09 Fujitsu Ltd 半導体レ−ザ装置
JP2001007403A (ja) * 1999-06-23 2001-01-12 Nec Corp 並列伝送型光モジュールおよびその製造方法
JP2004006450A (ja) * 2002-03-28 2004-01-08 Sumitomo Electric Ind Ltd Ｌｄ（レーザーダイオード）モジュール用パッケージおよびレーザーダイオードモジュール
JP2005033019A (ja) * 2003-07-04 2005-02-03 Sumitomo Electric Ind Ltd 発光モジュール
JP2005079542A (ja) * 2003-09-03 2005-03-24 Tdk Corp 半導体レーザ駆動回路および光ヘッド
WO2013150616A1 (ja) * 2012-04-04 2013-10-10 三菱電機株式会社 半導体パッケージ
JP2013236010A (ja) * 2012-05-10 2013-11-21 Mitsubishi Electric Corp 半導体装置
JP2016092260A (ja) * 2014-11-06 2016-05-23 住友電気工業株式会社 発光モジュール
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5895884A (ja) * 1981-12-01 1983-06-07 Canon Inc レ−ザユニツト
JPS5925292A (ja) * 1982-07-30 1984-02-09 Fujitsu Ltd 半導体レ−ザ装置
JP2001007403A (ja) * 1999-06-23 2001-01-12 Nec Corp 並列伝送型光モジュールおよびその製造方法
JP2004006450A (ja) * 2002-03-28 2004-01-08 Sumitomo Electric Ind Ltd Ｌｄ（レーザーダイオード）モジュール用パッケージおよびレーザーダイオードモジュール
JP2005033019A (ja) * 2003-07-04 2005-02-03 Sumitomo Electric Ind Ltd 発光モジュール
JP2005079542A (ja) * 2003-09-03 2005-03-24 Tdk Corp 半導体レーザ駆動回路および光ヘッド
WO2013150616A1 (ja) * 2012-04-04 2013-10-10 三菱電機株式会社 半導体パッケージ
JP2013236010A (ja) * 2012-05-10 2013-11-21 Mitsubishi Electric Corp 半導体装置
JP2016092260A (ja) * 2014-11-06 2016-05-23 住友電気工業株式会社 発光モジュール
US20180278011A1 (en) * 2017-03-23 2018-09-27 Infineon Technologies Ag Laser diode module

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