JP2013236010A - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP2013236010A JP2013236010A JP2012108513A JP2012108513A JP2013236010A JP 2013236010 A JP2013236010 A JP 2013236010A JP 2012108513 A JP2012108513 A JP 2012108513A JP 2012108513 A JP2012108513 A JP 2012108513A JP 2013236010 A JP2013236010 A JP 2013236010A
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- H01S5/024—Arrangements for thermal management
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Abstract
【解決手段】本願の発明に係る半導体装置は、GaAs、InP、又はGaNで形成された基板を有する半導体素子と、Cuと炭素材の複合材料、又はAlと炭素材の複合材料で形成され、該半導体素子にはんだ付けされた素子固定部品と、を備えたことを特徴とする。
【選択図】図1
Description
図1は、本発明の実施の形態1に係る半導体装置の断面図である。本発明の実施の形態1に係る半導体装置10はCANパッケージで形成されている。半導体装置10は、ステム12を有している。ステム12の上には放熱ブロック14が接続されている。放熱ブロック14は、例えばCuやFeなどの放熱性の高い材料で形成されている。
図3は、本発明の実施の形態2に係る半導体装置の断面図である。実施の形態1との相違点を中心に説明する。本発明の実施の形態2に係る半導体装置は、素子固定部品22のCu(又はAl)がAu層20、24のAuと相互拡散しないようにバリアメタル層60、62を有することを特徴とする。
図4は、本発明の実施の形態3に係る半導体装置の断面図である。実施の形態1との相違点を中心に説明する。本発明の実施の形態3に係る半導体装置は、素子固定部品110にステム12を固定したことを特徴とする。
図6は、本発明の実施の形態4に係る半導体装置の断面図である。実施の形態1との相違点を中心に説明する。本発明の実施の形態4に係る半導体装置は、素子固定部品112及び、素子固定部品112に接続されたステム114を有する。そして、ステム114を複合材料で形成したことを特徴とする。
図8は、本発明の実施の形態5に係る半導体装置の断面図である。実施の形態4との相違点を中心に説明する。本発明の実施の形態5に係る半導体装置は、ステム114の表面に鉄層120を形成したことを特徴とする。そして、キャップ44は鉄層120と溶接されてステム114に固定されている。
図10は、本発明の実施の形態6に係る半導体装置の断面図である。フレーム200は、フレーム部200aとリード部200bを有している。フレーム200の上には樹脂モールド202が形成されている。フレーム部200aには素子固定部品204が固定されている。素子固定部品204は実施の形態1の素子固定部品22と同じ材料で形成されている。素子固定部品204の上にははんだを介して半導体素子30が接続されている。
Claims (9)
- GaAs、InP、又はGaNで形成された基板を有する半導体素子と、
Cuと炭素材の複合材料、又はAlと炭素材の複合材料で形成され、前記半導体素子にはんだ付けされた素子固定部品と、を備えたことを特徴とする半導体装置。 - 前記複合材料は、Cuと炭素繊維を焼結させたもの又はAlと炭素繊維を焼結させたものであることを特徴とする請求項1に記載の半導体装置。
- 前記素子固定部品の表面に、Ti又はPtで形成されたバリアメタル層と、
前記バリアメタル層の表面に形成されたAu層と、を備え、
前記はんだは前記Au層と前記半導体素子の間に形成されたことを特徴とする請求項1又は2に記載の半導体装置。 - 前記素子固定部品と接続された放熱ブロックと、
前記放熱ブロックと接続されたステムと、
前記ステムに固定され、前記半導体素子、前記素子固定部品、及び前記放熱ブロックを覆うキャップと、を備えたことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。 - 前記素子固定部品と接続されたステムと、
前記ステムに固定され、前記半導体素子及び前記素子固定部品を覆うキャップと、を備えたことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。 - 前記ステムを前記素子固定部品と同じ材料で形成したことを特徴とする請求項4又は5に記載の半導体装置。
- 前記ステムと前記素子固定部品とを同じ材料で一体形成したことを特徴とする請求項5に記載の半導体装置。
- 前記ステムの表面に形成された鉄層を備え、
前記キャップは前記鉄層と溶接されて前記ステムに固定されたことを特徴とする請求項6又は7に記載の半導体装置。 - 前記素子固定部品に固定されたフレームを備えたことを特徴とする請求項1乃至3のいずれか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2012108513A JP2013236010A (ja) | 2012-05-10 | 2012-05-10 | 半導体装置 |
US13/742,459 US20130299843A1 (en) | 2012-05-10 | 2013-01-16 | Semiconductor device |
US14/482,422 US9041197B2 (en) | 2012-05-10 | 2014-09-10 | Semiconductor device |
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JP2012108513A JP2013236010A (ja) | 2012-05-10 | 2012-05-10 | 半導体装置 |
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JP2013236010A true JP2013236010A (ja) | 2013-11-21 |
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JP2012108513A Pending JP2013236010A (ja) | 2012-05-10 | 2012-05-10 | 半導体装置 |
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JP (1) | JP2013236010A (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2021090062A (ja) * | 2015-05-20 | 2021-06-10 | 日亜化学工業株式会社 | 発光装置 |
JP6906721B1 (ja) * | 2020-08-12 | 2021-07-21 | 三菱電機株式会社 | 半導体レーザ装置 |
US11149917B2 (en) | 2015-05-20 | 2021-10-19 | Nichia Corporation | Light-emitting device |
WO2023248895A1 (ja) * | 2022-06-20 | 2023-12-28 | ローム株式会社 | 半導体発光装置 |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2019532497A (ja) * | 2016-08-30 | 2019-11-07 | テラダイオード, インコーポレーテッド | カーボンナノチューブを利用した高出力レーザパッケージング |
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- 2012-05-10 JP JP2012108513A patent/JP2013236010A/ja active Pending
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2013
- 2013-01-16 US US13/742,459 patent/US20130299843A1/en not_active Abandoned
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2014
- 2014-09-10 US US14/482,422 patent/US9041197B2/en not_active Expired - Fee Related
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JPS5723252A (en) * | 1980-07-17 | 1982-02-06 | Nec Home Electronics Ltd | Manufacture for silver-brazed structure |
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Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2021090062A (ja) * | 2015-05-20 | 2021-06-10 | 日亜化学工業株式会社 | 発光装置 |
US11149917B2 (en) | 2015-05-20 | 2021-10-19 | Nichia Corporation | Light-emitting device |
US11428382B2 (en) | 2015-05-20 | 2022-08-30 | Nichia Corporation | Light-emitting device |
US11655958B2 (en) | 2015-05-20 | 2023-05-23 | Nichia Corporation | Light-emitting device |
US11892155B2 (en) | 2015-05-20 | 2024-02-06 | Nichia Corporation | Light-emitting device |
JP6906721B1 (ja) * | 2020-08-12 | 2021-07-21 | 三菱電機株式会社 | 半導体レーザ装置 |
WO2022034653A1 (ja) * | 2020-08-12 | 2022-02-17 | 三菱電機株式会社 | 半導体レーザ装置 |
US11699890B2 (en) | 2020-08-12 | 2023-07-11 | Mitsubishi Electric Corporation | Semiconductor laser machine |
WO2023248895A1 (ja) * | 2022-06-20 | 2023-12-28 | ローム株式会社 | 半導体発光装置 |
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US20140374770A1 (en) | 2014-12-25 |
US9041197B2 (en) | 2015-05-26 |
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