WO2023226643A1 - Procédé et système de production de tranche de silicium à commande automatique en temps réel, support et dispositif - Google Patents

Procédé et système de production de tranche de silicium à commande automatique en temps réel, support et dispositif Download PDF

Info

Publication number
WO2023226643A1
WO2023226643A1 PCT/CN2023/089673 CN2023089673W WO2023226643A1 WO 2023226643 A1 WO2023226643 A1 WO 2023226643A1 CN 2023089673 W CN2023089673 W CN 2023089673W WO 2023226643 A1 WO2023226643 A1 WO 2023226643A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon wafer
silicon
command
robot
target
Prior art date
Application number
PCT/CN2023/089673
Other languages
English (en)
Chinese (zh)
Inventor
徐志群
孙彬
付明全
周禹
马伟萍
薄千顷
Original Assignee
高景太阳能股份有限公司
广东金湾高景太阳能科技有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 高景太阳能股份有限公司, 广东金湾高景太阳能科技有限公司 filed Critical 高景太阳能股份有限公司
Publication of WO2023226643A1 publication Critical patent/WO2023226643A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
    • B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0633—Grinders for cutting-off using a cutting wire
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0675—Grinders for cutting-off methods therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/06—Grinders for cutting-off
    • B24B27/0683—Accessories therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B28—WORKING CEMENT, CLAY, OR STONE
    • B28D—WORKING STONE OR STONE-LIKE MATERIALS
    • B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
    • B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
    • B28D5/0082—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for supporting, holding, feeding, conveying or discharging work
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02008—Multistep processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of photovoltaic cutting technology, and more specifically, to a real-time automatic control silicon wafer production method, system, medium and equipment.
  • Single crystal silicon is a relatively active non-metallic element and an important component of crystal materials. It is at the forefront of the development of new materials.
  • the main purpose of monocrystalline silicon wafers is to make solar cells and use photovoltaic power generation and heating.
  • Monocrystalline silicon solar cells are also the fastest developed type of solar cell at present. Its composition and production process have been finalized, and its products have been widely used in daily life, space and some special ground facilities. Because solar energy has many advantages such as cleanliness, environmental protection, and convenience, solar energy utilization technology has made great progress in research and development, commercial production, and market development in the past thirty years, and has become one of the world's emerging industries with rapid and stable development.
  • the existing technology mainly used human power to produce single crystal silicon wafers.
  • the efficiency was low, the accuracy was not high, and human errors often occurred.
  • the present invention proposes a real-time automatic control silicon wafer production method, system, media and equipment.
  • the monocrystalline silicon wafers can be improved. production efficiency and reliability.
  • a real-time automatic control silicon wafer production method is provided.
  • the real-time automatically controlled silicon wafer production method includes:
  • the robot After the robot receives the stick-sticking completion command, the robot automatically carries out transportation and cutting. After completing the silicon wafer cutting, it issues a slicing completion command;
  • the robot After the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through the degumming machine and issues the command to complete the degumming;
  • the robot After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafers through the arranging machine and forms them into the second target degummed silicon wafers, and issues the command to complete the arrangement;
  • the robot After the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through the cleaning machine to form a cleaned silicon wafer, and issues a silicon wafer cleaning completion command;
  • the robot After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse.
  • the robot is used to position the silicon rod, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue a command to complete the stick sticking, Specifically include:
  • the robot automatically uses glue to adhere the dovetail base and the silicon rod, and collects the current value of the glue thickness
  • the machine According to the position of the silicon rod, the target value of the glue coating speed and the given value of the glue feeding speed, the machine The human automatically adjusts the glue feeding process, completes the fixation of the silicon rod, and issues the command to complete the stick sticking;
  • X is the position of the silicon rod
  • Cx is the initial position coordinate
  • Fx is the placement position coordinate
  • V ref K T (H ref -H d )+A T ,
  • V ref is the given value of the glue feeding speed
  • H ref is the preset given value of glue coating thickness
  • H d is the current value of the glue coating thickness
  • K T is the glue coating coefficient
  • a T is The glue coating constant
  • J is the glue coating uniformity
  • V is the glue coating speed collected in real time
  • max is the maximum value function per unit time
  • V 0 is the initial value of the glue coating speed
  • Y is the glue overflow amount
  • V is the glue coating speed collected in real time
  • P is the preset glue feeding correction coefficient
  • G is the preset glue feeding constant
  • V p arg max(k 1 Jk 2 Y)
  • V p is the target value of the glue coating speed
  • Y is the glue coating overflow amount
  • arg max (k 1 Jk 2 Y) is the calculated value of k 1 Jk 2 Y corresponding to the entire glue coating speed
  • k 1 is the preset first gluing coefficient
  • k 2 is the preset second gluing coefficient.
  • the robot automatically transports and cuts the silicon wafer, and after completing the silicon wafer cutting, issues a slicing completion command, which specifically includes:
  • the robot After the robot receives the stick-gluing command, it waits according to the preset time interval and then automatically Issue a command to move the silicon rod;
  • the robot After the robot receives the command to move the silicon rod, the robot delivers the silicon rod to the slicing workshop according to the preset route;
  • the silicon rod is cut into several silicon wafers of preset thickness using the back and forth grinding of diamond on the diamond wire;
  • W is the target cutting position
  • M is the preset thickness
  • the robot preferably, after the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through a degumming machine and issues a command to complete the degumming, specifically including:
  • the robot After the robot receives the command to complete the slicing, the robot sends the cut silicon rods to the degumming machine;
  • the silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;
  • the first target degummed silicon wafers are arranged by a arranging machine and formed into a second target degummed silicon wafer, Issue the command to complete the arrangement, including:
  • the robot After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafers into the slot through the arranging machine;
  • the second target degummed silicon wafer is cleaned by a cleaning machine to form a cleaned silicon wafer, and the silicon wafer cleaning is issued.
  • Complete the command including:
  • the robot After the robot receives the order to complete the arrangement, it puts the second target degummed silicon wafer and the card slot into the cleaning machine;
  • the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse, specifically including:
  • the robot After the robot obtains the silicon wafer cleaning completion command, it automatically performs abnormal analysis on the cleaning completed silicon wafer to obtain the silicon rod positioning accuracy and silicon rod abnormality category;
  • Robots are used to automatically package the silicon rods according to the abnormal categories and transport them to the warehouse;
  • Z k is the quality level
  • D is the positioning accuracy of the silicon rod
  • B is the abnormal category of the silicon rod
  • T K is the operating speed adjustment coefficient
  • Z k is the quality level
  • k 0 is the preset actual value
  • c 0 is the preset real-time correction index.
  • a real-time automatic control silicon wafer production system is provided.
  • the real-time automatically controlled silicon wafer production system includes:
  • the dipping module is used to position the silicon rod through the robot, obtain the position of the silicon rod, and set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue the stick sticking command;
  • the slicing module is used to automatically transport and cut the robot after receiving the stick stick command, and after completing the silicon wafer cutting, issue the slicing command;
  • the degumming module is used to form the first target degummed silicon wafer through the degumming machine after the robot receives the command to complete the slicing, and issue the command to complete the degumming;
  • the wafer arrangement module is used to arrange the first target degummed silicon wafers through the arranging machine after the robot receives the degumming completion command, and form the second target degumming silicon wafers, and issue the completion arrangement command;
  • a cleaning module used to clean the second target degummed silicon wafer through a cleaning machine after the robot receives the completion arrangement command, form a cleaned silicon wafer, and issue a silicon wafer cleaning completion command;
  • the package inspection module is used to automatically complete the classification and quality analysis of all silicon wafers through the robot after the robot obtains the silicon wafer cleaning completion command, and then packages and transports them to the warehouse.
  • a computer-readable storage medium on which computer program instructions are stored, and when the computer program instructions are executed by a processor, the computer program instructions implement any one of the first aspects of the embodiment of the present invention. method described.
  • an electronic device including a memory and a processor, the memory being used to store one or more computer program instructions, wherein the one or more computer program instructions are processed by the The processor is executed to implement the method described in any one of the first aspects of the embodiments of the present invention.
  • a robot-based monocrystalline silicon production method and system which improves production efficiency and reduces human costs by automatically completing the control of materials and equipment in multiple production processes. Probability of error.
  • a robot execution method for online monocrystalline silicon quality control is provided, which can automatically control the current production process online.
  • Figure 1 is a flow chart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention.
  • Figure 2 is a real-time automatic control silicon wafer production method according to an embodiment of the present invention, in which a robot is used to position the silicon rod, obtain the position of the silicon rod, and set the glue coating speed target value to automatically glue and adhere the silicon rod. , the flow chart of issuing the sticky stick command.
  • Figure 3 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot receives the stick stick command, the robot automatically transports and cuts the silicon wafer. After completing the silicon wafer cutting, it sends a complete slicing command. Flowchart of the command.
  • Figure 4 is a flowchart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention, in which after the robot receives the completion slicing command, it forms the first target degumming silicon wafer through the degumming machine and issues the completion degumming command. picture.
  • Figure 5 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention.
  • the robot After the robot receives the degumming completion command, it arranges the first target degummed silicon wafers through the arranging machine. And form the second target degumming silicon wafer, and issue the flow chart to complete the arrangement command.
  • Figure 6 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention.
  • the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through a cleaning machine to complete the cleaning process.
  • Silicon wafer flow chart for issuing silicon wafer cleaning completion command.
  • Figure 7 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them. Flow chart to warehouse.
  • Figure 8 is a structural diagram of a real-time automatic controlled silicon wafer production system according to an embodiment of the present invention.
  • Figure 9 is a structural diagram of an electronic device in one embodiment of the present invention.
  • Single crystal silicon is a relatively active non-metallic element and an important component of crystal materials. It is at the forefront of the development of new materials.
  • the main purpose of monocrystalline silicon wafers is to make solar cells and use photovoltaic power generation and heating.
  • Monocrystalline silicon solar cells are also the fastest developed type of solar cell at present. Its composition and production process have been finalized, and its products have been widely used in daily life, space and some special ground facilities. Because solar energy has many advantages such as cleanliness, environmental protection, and convenience, solar energy utilization technology has made great progress in research and development, commercial production, and market development in the past thirty years, and has become one of the world's emerging industries with rapid and stable development.
  • the existing technology mainly used human power to produce single crystal silicon wafers.
  • the efficiency was low, the accuracy was not high, and human errors often occurred.
  • a real-time automatic control silicon wafer production method, system, medium and equipment are provided. This solution improves the production efficiency and reliability of monocrystalline silicon wafers through automatic control of the online monocrystalline silicon wafer production process, combined with automatic robot identification and judgment.
  • a real-time automatic control silicon wafer production method is provided.
  • Figure 1 is a flow chart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention.
  • the real-time automatically controlled silicon wafer production method includes:
  • the robot After the robot receives the stick-gluing completion command, the robot automatically carries out transportation and cutting. After completing the silicon wafer cutting, it issues a slicing completion command;
  • the robot After the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through the degumming machine and issues the command to complete the degumming;
  • the robot After the robot receives the command to complete the degumming, it arranges the first target degummed silicon wafers through the arranging machine and forms them into the second target degummed silicon wafers, and issues the command to complete the arrangement;
  • the robot After the robot receives the arrangement completion command, it cleans the second target degummed silicon wafer through the cleaning machine to form a cleaned silicon wafer, and issues a silicon wafer cleaning completion command;
  • the robot After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse.
  • Figure 2 is a real-time automatic control silicon wafer production method according to an embodiment of the present invention, in which a robot is used to position the silicon rod, obtain the position of the silicon rod, and set the glue coating speed target value to automatically glue and adhere the silicon rod. , the flow chart of issuing the sticky stick command.
  • the robot automatically carries out transportation and cutting, and after completing the silicon wafer cutting, a completion slicing command is issued. , specifically including:
  • the initial position coordinates of the silicon rod are the initially marked installation position of the gluing equipment, which is generally the side of the gluing equipment closest to the robot. Therefore, from the perspective of the robot, there will be an initial position coordinate and a placement position coordinate.
  • the placement position coordinate is a preset placement position after the actual movement.
  • the robot automatically uses glue to adhere the dovetail base and the silicon rod, and collects the current value of the glue thickness
  • the dovetail base is the base of the glue coating equipment and is used for adhesion with the silicon rod.
  • the gluing coefficient and gluing constant are a number set based on experience and are positive integers.
  • X is the position of the silicon rod
  • Cx is the initial position coordinate
  • Fx is the placement position coordinate
  • V ref K T (H ref -H d )+A T ,
  • V ref is the given value of the glue feeding speed
  • H ref is the preset given value of glue coating thickness
  • H d is the current value of the glue coating thickness
  • K T is the glue coating coefficient
  • a T is The glue coating constant
  • J is the glue coating uniformity
  • V is the glue coating speed collected in real time
  • max is the maximum value function per unit time
  • V 0 is the initial value of the glue coating speed
  • Y is the glue overflow amount
  • V is the glue coating speed collected in real time
  • P is the preset glue feeding correction coefficient
  • G is the preset glue feeding constant
  • V p arg max(k 1 Jk 2 Y)
  • V p is the target value of the glue coating speed
  • Y is the glue coating overflow amount
  • arg max (k 1 Jk 2 Y) is the calculated value of k 1 Jk 2 Y corresponding to the entire glue coating speed
  • k 1 is the preset first gluing coefficient
  • k 2 is the preset second gluing coefficient.
  • the initial value of the gluing speed is a preset speed, but the entire gluing process is dynamic, so the gluing speed will be fine-tuned during the process.
  • the preset glue feeding correction coefficient is the coefficient set for the glue coating process control. It is generally 1. When the glue coating speed needs to be adjusted quickly, the preset glue feeding correction coefficient will be greater than 1, and the preset glue feeding correction coefficient will be the smallest. The value can be set to 0, and the preset glue supply constant is generally set according to the parameters recommended by the manufacturer of the glue coating equipment.
  • the adaptive control of the entire glue feeding process is completed, and efficient and accurate silicon rod sticking is achieved through the robot.
  • the process can be started accurately and the specific stick position is recorded.
  • k 1 is the preset first gluing coefficient
  • k 2 is the preset second gluing coefficient.
  • the initial values are set to 0.5. During the gluing process, they can be adjusted to control the amount of glue overflow and The degree of concern between the uniformity of glue application.
  • Figure 3 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot receives the stick stick command, the robot automatically transports and cuts the silicon wafer. After completing the silicon wafer cutting, it sends a complete slicing command. Flowchart of the command.
  • the robot automatically carries out transportation and cutting, and after completing the silicon wafer cutting, a completion slicing command is issued. , specifically including:
  • the robot After the robot receives the stick-sticking command, it waits at a preset time interval and then automatically issues a moving silicon stick command;
  • the robot After the robot receives the command to move the silicon rod, the robot delivers the silicon rod to the slicing workshop according to the preset route;
  • W is the target cutting position
  • M is the preset thickness
  • automatic robots are used for automatic transportation and automatic spraying, and automatic cutting is performed in conjunction with preset cutting positions to form multiple standard thin silicon wafers with uniform thickness.
  • the preset thickness is The required thickness when cutting is preset before cutting. There is no dynamic adjustment during each cutting process. The entire process is not realized manually, with high efficiency and high accuracy.
  • Figure 4 is a flowchart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention, in which after the robot receives the completion slicing command, it forms the first target degumming silicon wafer through the degumming machine and issues the completion degumming command. picture.
  • the first target degumming silicon wafer is formed by a degumming machine, and a completion degumming command is issued, specifically including :
  • the silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;
  • the cut silicon rod is sent to the degumming machine, and the silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid, and the silicon wafer is pre-cleaned.
  • the process is all performed by robots.
  • Figure 5 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention.
  • the robot After the robot receives the degumming completion command, it arranges the first target degummed silicon wafers through the arranging machine and forms a The second target degummes the silicon wafer and issues the flow chart to complete the arrangement command.
  • the robot receives the completed After the degumming command is generated, the first target degummed silicon wafers are arranged through the arranging machine and formed into the second target degummed silicon wafers, and an order to complete the arrangement is issued, which specifically includes:
  • the robot After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafer into the card slot through the arranging machine;
  • the degummed silicon wafers are arranged into the card slot through a wafer arrangement machine, so that the silicon wafers are placed at equidistant intervals.
  • Figure 6 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention.
  • the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through a cleaning machine to complete the cleaning process.
  • Silicon wafer flow chart for issuing silicon wafer cleaning completion command.
  • the second target degummed silicon wafer is cleaned by a cleaning machine to form a cleaned silicon wafer.
  • wafer issue a silicon wafer cleaning completion command, including:
  • the silicon wafer and the card slot are passed through a cleaning machine to remove and clean the oxide layer and impurities on the surface of the silicon wafer.
  • the process requires cleaning with a cleaning agent and ultrasonic cleaning.
  • Figure 7 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention. After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality of all silicon wafers. Quantity analysis, packaging and transportation to the warehouse flow chart.
  • the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to Warehouse, specifically including:
  • Z k is the quality level
  • D is the positioning accuracy of the silicon rod
  • B is the abnormal category of the silicon rod
  • T K is the running speed adjustment coefficient
  • Z k is the quality level
  • k 0 is the preset real-time correction coefficient
  • c 0 is the preset real-time correction index.
  • the entire silicon wafer production process can be automatically corrected during operation. , and then adjust the operating speed of silicon wafers produced through robot automation while ensuring quality; specifically, k 0 is the preset real-time correction coefficient, and its initial value is 1.
  • k 0 is the preset real-time correction coefficient
  • its initial value is 1.
  • a real-time automatic control silicon wafer production system is provided.
  • Figure 8 is a structural diagram of a real-time automatic controlled silicon wafer production system according to an embodiment of the present invention.
  • the real-time automatically controlled silicon wafer production system includes:
  • the stick dipping module 801 is used to position the silicon rod through a robot, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue a command to complete the stick sticking;
  • the slicing module 802 is used to automatically transport and cut through the robot after the robot receives the stick-gluing command. After completing the silicon wafer cutting, issue the slicing command;
  • the degumming module 803 is used to form the first target degummed silicon wafer through the degumming machine after the robot receives the complete slicing command, and issue a complete degumming command;
  • the wafer arrangement module 804 is used to arrange the first target degummed silicon wafer through the arranging machine after the robot receives the complete degumming command, and form it into the second target degummed silicon wafer, and issue the completion arrangement command;
  • the cleaning module 805 is used to clean the second target degummed silicon wafer through the cleaning machine after the robot receives the completion arrangement command, form a cleaned silicon wafer, and issue a silicon wafer cleaning completion command;
  • the package inspection module 806 is used to automatically complete the classification and quality analysis of all silicon wafers through the robot after the robot obtains the silicon wafer cleaning completion command, and package and transport them to the warehouse.
  • a real-time automatic control system for producing silicon rods into silicon wafers is provided, which automatically controls the entire silicon wafer production process through real-time robots to improve production efficiency.
  • dip stick module 801 includes:
  • the silicon rod placement unit obtains the initial position coordinates of the silicon rod and automatically moves the silicon rod to the preset placement position coordinates through the robot;
  • a silicon rod position unit that uses a first calculation formula to calculate the position of the silicon rod according to the initial position coordinates and the placement position coordinates;
  • the glue coating and collection unit automatically uses glue to adhere the dovetail base and the silicon rod through a robot, and collects Set the current value of glue thickness;
  • the glue feeding speed calculation unit sets the glue coating coefficient and glue coating constant, and calculates the glue feeding speed given value through the second calculation formula
  • the glue coating uniformity calculation unit calculates the glue coating uniformity through the third calculation formula
  • the glue overflow calculation unit calculates the glue overflow through the fourth calculation formula
  • the glue coating speed target value calculation unit calculates the glue coating speed target value through the fifth calculation formula
  • the completion sticking stick command sending unit performs automatic glue feeding process adjustment of the robot according to the position of the silicon rod, the glue coating speed target value and the glue feeding speed given value, completes the fixation of the silicon rod, and issues the completion stick sticking command. Order;
  • X is the position of the silicon rod
  • Cx is the initial position coordinate
  • Fx is the placement position coordinate
  • V ref K T (H ref -H d )+A T ,
  • V ref is the given value of the glue feeding speed
  • H ref is the preset given value of glue coating thickness
  • H d is the current value of the glue coating thickness
  • K T is the glue coating coefficient
  • a T is The glue coating constant
  • J is the glue coating uniformity
  • V is the glue coating speed collected in real time
  • max is the maximum value function per unit time
  • V 0 is the initial value of the glue coating speed
  • Y is the glue overflow amount
  • V is the glue coating speed collected in real time
  • P is the preset glue feeding correction coefficient
  • G is the preset glue feeding constant
  • V p arg max(k 1 Jk 2 Y)
  • V p is the target value of the glue coating speed
  • Y is the glue coating overflow amount
  • arg max (k 1 Jk 2 Y) is the calculated value of k 1 Jk 2 Y corresponding to the entire glue coating speed
  • k 1 is the preset first gluing coefficient
  • k 2 is the preset second gluing coefficient.
  • the slicing module 802 includes:
  • the moving silicon rod command issuing unit after the robot receives the stick sticking command, waits according to the preset time interval and then automatically issues the moving silicon rod command;
  • the silicon rod distribution unit after the robot receives the command to move the silicon rod, distributes the silicon rod to the slicing workshop through the robot according to the preset route;
  • An automatic spray cleaning unit is used to automatically spray and clean the silicon rods in the slicing workshop;
  • the target cutting position calculation unit uses the sixth calculation formula to calculate the target cutting position of the cleaned silicon rod
  • the silicon wafer generation unit with a preset thickness cuts the silicon rod into several silicon wafers with a preset thickness by using the back and forth grinding of diamonds on a diamond wire according to the target cutting position;
  • the silicon wafer issuing unit with a preset thickness issues the slicing completion command after completing the silicon wafer cutting
  • W is the target cutting position
  • M is the preset thickness
  • the degumming module 803 includes:
  • the silicon rod is sent to the degumming unit. After the robot receives the slicing completion command, the cut silicon rod is sent to the degumming machine through the robot;
  • the degumming silicon wafer generation unit separates the silicon wafer from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;
  • a first target degummed silicon wafer generating unit cleans the degummed silicon wafer to form the first target degummed silicon wafer;
  • the degumming completion command issuing unit issues the degumming completion command.
  • the sheet arrangement module 804 includes:
  • the silicon wafers are arranged in a card slot unit. After the robot receives the command to complete degumming, the first target degummed silicon wafers are arranged into the card slot through the arranging machine;
  • An equal-spaced placement unit uses the chip arranger to place the first target degummed silicon wafers at equal intervals
  • the second target degummed silicon wafer generating unit cleans the first target degummed silicon wafers placed at equal intervals to form the second target degummed silicon wafer;
  • the completion arrangement command issuing unit issues the completion arrangement command.
  • the cleaning module 805 includes:
  • the degumming silicon wafer cleaning unit cleans the second target degumming silicon wafer through cleaning agent and ultrasonic waves;
  • a drying unit dries the cleaned second target degummed silicon wafer to obtain the cleaned silicon wafer;
  • the silicon wafer cleaning completion command issuing unit issues the silicon wafer cleaning completion command.
  • the package inspection module 806 includes:
  • the silicon rod abnormality distinguishing unit after the robot obtains the silicon wafer cleaning completion command, automatically performs abnormality analysis on the cleaning completed silicon wafer to obtain the silicon rod positioning accuracy and silicon rod abnormality category;
  • the quality grade calculation unit uses the seventh calculation formula to calculate the quality grade of the silicon wafer
  • the real-time correction index setting unit sets the preset real-time correction coefficient and the preset real-time correction index
  • the operating speed adjustment coefficient calculation unit uses the eighth calculation formula to calculate the operating speed adjustment coefficient according to the quality level
  • An action speed adjustment unit is used to adjust the action speed of the robot during transportation according to the operating speed adjustment coefficient
  • the transfer warehouse unit uses robots to automatically pack and transfer the silicon rods according to the abnormal category. to the warehouse;
  • Z k is the quality level
  • D is the positioning accuracy of the silicon rod
  • B is the abnormal category of the silicon rod
  • T K is the running speed adjustment coefficient
  • Z k is the quality level
  • k 0 is the preset real-time correction coefficient
  • c 0 is the preset real-time correction index.
  • a computer-readable storage medium on which computer program instructions are stored, and when the computer program instructions are executed by a processor, the computer program instructions implement any one of the first aspects of the embodiment of the present invention. method described.
  • FIG. 9 is a structural diagram of an electronic device in one embodiment of the present invention.
  • the electronic equipment shown in Figure 9 is a universal real-time automatic silicon wafer production control device, which includes a universal computer hardware structure, which at least includes a processor 901 and a memory 902.
  • the processor 901 and the memory 902 are connected by a bus 903.
  • Memory 902 is adapted to store instructions or programs executable by processor 901.
  • the processor 901 may be an independent microprocessor or a collection of one or more microprocessors.
  • the processor 901 executes the instructions stored in the memory 902 to execute the method flow of the embodiment of the present invention as described above to process data and control other devices.
  • the bus 903 connects the above-mentioned plurality of components together while connecting the above-mentioned components to the display controller 904 and the display device and the input/output (I/O) device 905.
  • Input/output (I/O) device 905 may be a mouse, keyboard, modem, network interface, touch input device, motion sensing input device, printer, and other devices known in the art.
  • input/output devices 905 are connected to the system through an input/output (I/O) controller 906 .
  • a robot-based single crystal silicon production method and system are provided. Automatically complete the control of materials and equipment in multiple production processes, improve production efficiency and reduce the probability of human errors.
  • a robot execution method for online monocrystalline silicon quality control is provided, which can automatically control the current production process online.
  • embodiments of the present invention may be provided as methods, systems, or computer program products.
  • the invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects.
  • the invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, magnetic disk storage, optical storage, etc.) embodying computer-usable program code therein.
  • These computer program instructions may also be stored in a computer-readable memory that causes a computer or other programmable data processing apparatus to operate in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including the instruction means, the instructions
  • the device implements the functions specified in a process or processes of the flowchart and/or a block or blocks of the block diagram.
  • These computer program instructions may also be loaded onto a computer or other programmable data processing device, causing a series of operating steps to be performed on the computer or other programmable device to produce computer-implemented processing, thereby executing on the computer or other programmable device.
  • Instructions provide steps for implementing the functions specified in a process or processes of a flowchart diagram and/or a block or blocks of a block diagram.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

La présente invention concerne un procédé et un système de production de tranche de silicium à commande automatique en temps réel, un support et un dispositif. La solution consiste : à positionner des tiges de silicium au moyen d'un robot pour obtenir des positions des tiges de silicium, et à régler une valeur cible de vitesse d'application de gomme pour appliquer de la gomme et faire adhérer automatiquement les tiges de silicium ; à réaliser de manière automatique le transport et e la coupe au moyen du robot pour achever la coupe de tranche de silicium ; à former des premières tranches de silicium dégommées cibles au moyen d'une machine de dégommage ; à disposer les premières tranches de silicium dégommées cibles au moyen d'une machine d'agencement de tranches, et à former des secondes tranches de silicium dégommées cibles ; à nettoyer les secondes tranches de silicium dégommées cibles au moyen d'une machine de nettoyage pour former des tranches de silicium nettoyées, puis à émettre une instruction d'achèvement de nettoyage de tranche de silicium ; et après l'obtention par le robot de l'instruction d'achèvement de nettoyage de tranche de silicium, à achever de manière automatique une classification et une analyse de qualité de toutes les tranches de silicium au moyen du robot, et à emballer et à transporter les tranches de silicium vers un entrepôt. La solution améliore l'efficacité de production et la fiabilité de tranches de silicium monocristallin en combinant une commande automatique en ligne du processus de production des tranches de silicium monocristallin avec une reconnaissance et une détermination automatiques du robot.
PCT/CN2023/089673 2022-05-26 2023-04-21 Procédé et système de production de tranche de silicium à commande automatique en temps réel, support et dispositif WO2023226643A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN202210579840.2A CN114670352B (zh) 2022-05-26 2022-05-26 一种实时自动控制的硅片生产方法、系统、介质及设备
CN202210579840.2 2022-05-26

Publications (1)

Publication Number Publication Date
WO2023226643A1 true WO2023226643A1 (fr) 2023-11-30

Family

ID=82080319

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2023/089673 WO2023226643A1 (fr) 2022-05-26 2023-04-21 Procédé et système de production de tranche de silicium à commande automatique en temps réel, support et dispositif

Country Status (2)

Country Link
CN (1) CN114670352B (fr)
WO (1) WO2023226643A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114670352B (zh) * 2022-05-26 2022-08-12 广东高景太阳能科技有限公司 一种实时自动控制的硅片生产方法、系统、介质及设备

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001054181A2 (fr) * 2000-01-22 2001-07-26 Ted Albert Loxley Procede et dispositif de nettoyage de tranches de silicium
CN106696103A (zh) * 2016-12-16 2017-05-24 苏州阿特斯阳光电力科技有限公司 粘棒方法及切割铸造多晶硅棒的方法
CN107738370A (zh) * 2017-10-27 2018-02-27 四川永祥硅材料有限公司 一种多晶硅片制备工艺
CN109454642A (zh) * 2018-12-27 2019-03-12 南京埃克里得视觉技术有限公司 基于三维视觉的机器人涂胶轨迹自动生产方法
CN110518092A (zh) * 2019-08-13 2019-11-29 安徽晶天新能源科技有限责任公司 一种太阳能电池片用硅片生产加工工艺
CN215969501U (zh) * 2021-01-07 2022-03-08 银川隆基光伏科技有限公司 一种硅片脱胶系统及生产系统
CN114529547A (zh) * 2022-04-24 2022-05-24 常州捷仕特机器人科技有限公司 一种机器人涂胶工作站的涂胶质量检测系统及方法
CN114670352A (zh) * 2022-05-26 2022-06-28 广东高景太阳能科技有限公司 一种实时自动控制的硅片生产方法、系统、介质及设备

Family Cites Families (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0720145A (ja) * 1993-06-30 1995-01-24 Sanyo Electric Co Ltd 半導体加速度センサの製造方法
DE10303459A1 (de) * 2003-01-29 2004-08-19 Infineon Technologies Ag Verfahren und Vorrichtung zum Kontrollieren des Randes eines scheibenförmigen Gegenstandes
DE102010008233A1 (de) * 2010-02-11 2011-08-11 Schmid Technology GmbH, 68723 Vorrichtung und Verfahren zum Transport von Substraten
CN102390094A (zh) * 2011-08-07 2012-03-28 江西金葵能源科技有限公司 一种使用金刚石线切割的太阳能级硅晶片及其切割方法
CN103186049A (zh) * 2011-12-30 2013-07-03 北大方正集团有限公司 一种涂胶显影机及其使用方法
CN102744796A (zh) * 2012-06-20 2012-10-24 常州天合光能有限公司 硅锭切片质量监控系统及监测方法
CN102825670A (zh) * 2012-09-17 2012-12-19 金坛正信光伏电子有限公司 一种太阳能硅棒的切片方法
CN103831253B (zh) * 2014-02-17 2017-01-04 南京航空航天大学 基于dsp机器视觉的太阳能硅片表面检测装置及方法
CN104441282B (zh) * 2014-10-31 2017-02-01 内蒙古中环光伏材料有限公司 一种应用低颗粒电镀金刚线切割硅片的方法
CN106696104B (zh) * 2016-12-16 2019-08-30 苏州阿特斯阳光电力科技有限公司 粘棒方法及切割铸造多晶硅棒的方法
CN107263750B (zh) * 2017-08-07 2020-01-10 苏州赛万玉山智能科技有限公司 太阳能硅片的切割方法及三维结构太阳能硅片
CN107457921A (zh) * 2017-08-24 2017-12-12 天津市环欧半导体材料技术有限公司 一种硅片制备工艺
CN108097533B (zh) * 2017-12-21 2021-01-26 重庆超硅半导体有限公司 一种集成电路用单晶硅棒自动涂胶粘接方法
CN108537808B (zh) * 2018-04-08 2019-02-22 易思维（天津）科技有限公司 一种基于机器人示教点信息的涂胶在线检测方法
CN113113509A (zh) * 2021-04-07 2021-07-13 安徽晶天新能源科技有限责任公司 一种太阳能硅片加工用涂胶质量分点式检测工艺
CN113514471A (zh) * 2021-07-09 2021-10-19 武汉华臻志创科技有限公司 一种涂胶效果图像检测方法
CN113878738A (zh) * 2021-10-29 2022-01-04 王会娜 一种半导体单晶硅棒切片用线切割机气体处理机构
CN114392961A (zh) * 2021-12-13 2022-04-26 广东金湾高景太阳能科技有限公司 一种硅片线切割加工用清洗工艺
CN114311355B (zh) * 2022-03-14 2022-05-27 广东高景太阳能科技有限公司 一种单晶硅片的生产方法及单晶硅片

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001054181A2 (fr) * 2000-01-22 2001-07-26 Ted Albert Loxley Procede et dispositif de nettoyage de tranches de silicium
CN106696103A (zh) * 2016-12-16 2017-05-24 苏州阿特斯阳光电力科技有限公司 粘棒方法及切割铸造多晶硅棒的方法
CN107738370A (zh) * 2017-10-27 2018-02-27 四川永祥硅材料有限公司 一种多晶硅片制备工艺
CN109454642A (zh) * 2018-12-27 2019-03-12 南京埃克里得视觉技术有限公司 基于三维视觉的机器人涂胶轨迹自动生产方法
CN110518092A (zh) * 2019-08-13 2019-11-29 安徽晶天新能源科技有限责任公司 一种太阳能电池片用硅片生产加工工艺
CN215969501U (zh) * 2021-01-07 2022-03-08 银川隆基光伏科技有限公司 一种硅片脱胶系统及生产系统
CN114529547A (zh) * 2022-04-24 2022-05-24 常州捷仕特机器人科技有限公司 一种机器人涂胶工作站的涂胶质量检测系统及方法
CN114670352A (zh) * 2022-05-26 2022-06-28 广东高景太阳能科技有限公司 一种实时自动控制的硅片生产方法、系统、介质及设备

Also Published As

Publication number Publication date
CN114670352A (zh) 2022-06-28
CN114670352B (zh) 2022-08-12

Similar Documents

Publication Publication Date Title
WO2023226643A1 (fr) Procédé et système de production de tranche de silicium à commande automatique en temps réel, support et dispositif
CN107301473B (zh) 基于改进遗传算法的同类平行机批调度方法及系统
JP5535032B2 (ja) 部品装着システム、部品装着設定装置、部品装着設定プログラム、及び部品装着方法
CN201068341Y (zh) 石英晶片全自动装片机
CN1131813A (zh) 一种生产半导体片的方法
CN108097533B (zh) 一种集成电路用单晶硅棒自动涂胶粘接方法
CN111229679A (zh) 晶圆清洗设备的控制方法、控制装置及晶圆清洗设备
Angra et al. Comparison and evaluation of job selection dispatching rules for integrated scheduling of multi-load automatic guided vehicles serving in variable sized flexible manufacturing system layouts: A simulation study
CN104318022A (zh) 一种预测工件表面粗糙度并提高切削效率的方法
CN108942639A (zh) 一种制程工艺参数的反馈控制方法
CN110116353A (zh) 一种叶片前后缘机器人砂带磨抛步长优化方法
Singh et al. Experimental investigation for performance assessment of scheduling policies in semiconductor wafer fabrication—a simulation approach
CN106802825A (zh) 一种基于实时系统的动态任务调度方法与系统
CN115794506B (zh) 一种晶片调度方法和一种电子设备
CN201174046Y (zh) 切削制程的可预先修正切削路径系统
CN110850830B (zh) 自动工艺处理的槽式设备及其配方调度方法
CN110147078B (zh) 一种无故障rgv智能系统二道工序加工动态调度方法
CN107392384A (zh) 一种基于带有释放时间流水车间的双代理问题的下界求解方法
CN103579058B (zh) 一种多批次连续运行的方法
CN103439893B (zh) 设备装载端口的预约使用控制方法
US10579051B2 (en) Oil mist concentration management apparatus, oil mist management system, and oil mist management method
CN117852839B (zh) 一种医用玻璃瓶的生产效率调控方法、设备及介质
JPS62173155A (ja) 投入制御最適化方式
CN107399463B (zh) 基于周转箱循环式直角坐标机器人抓取条烟分拣系统
JP2005018266A (ja) 並列分散処理システム、ｎｃデータ作成方法及びｎｃデータ作成プログラム

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23810717

Country of ref document: EP

Kind code of ref document: A1