WO2023226643A1 - Real-time automatic control silicon wafer production method and system, medium, and device - Google Patents

Abstract

The present invention provides a real-time automatic control silicon wafer production method and system, a medium, and a device. The solution comprises: positioning silicon rods by means of a robot to obtain positions of the silicon rods, and setting a gumming speed target value to automatically gum and adhere the silicon rods; automatically performing transportation and cutting by means of the robot to complete silicon wafer cutting; forming first target degummed silicon wafers by means of a degumming machine; arranging the first target degummed silicon wafers by means of a wafer arranging machine, and forming second target degummed silicon wafers; cleaning the second target degummed silicon wafers by means of a cleaning machine to form cleaned silicon wafers, and then issuing a silicon wafer cleaning completion command; and after the robot obtains the silicon wafer cleaning completion command, automatically completing classification and quality analysis of all the silicon wafers by means of the robot, and packaging and transporting the silicon wafers to a warehouse. The solution improves the production efficiency and reliability of monocrystalline silicon wafers by combining online automatic control of the production process of the monocrystalline silicon wafers with automatic recognition and determination of the robot.

Description

A real-time automatic control silicon wafer production method, system, media and equipment Technical field

The present invention relates to the field of photovoltaic cutting technology, and more specifically, to a real-time automatic control silicon wafer production method, system, medium and equipment.

Background technique

Single crystal silicon is a relatively active non-metallic element and an important component of crystal materials. It is at the forefront of the development of new materials. The main purpose of monocrystalline silicon wafers is to make solar cells and use photovoltaic power generation and heating. Monocrystalline silicon solar cells are also the fastest developed type of solar cell at present. Its composition and production process have been finalized, and its products have been widely used in daily life, space and some special ground facilities. Because solar energy has many advantages such as cleanliness, environmental protection, and convenience, solar energy utilization technology has made great progress in research and development, commercial production, and market development in the past thirty years, and has become one of the world's emerging industries with rapid and stable development.

Before the technology of the present invention, the existing technology mainly used human power to produce single crystal silicon wafers. The efficiency was low, the accuracy was not high, and human errors often occurred.

Contents of the invention

In view of the above problems, the present invention proposes a real-time automatic control silicon wafer production method, system, media and equipment. Through the automatic control of the online monocrystalline silicon wafer production process, combined with automatic robot identification and judgment, the monocrystalline silicon wafers can be improved. production efficiency and reliability.

According to a first aspect of the embodiment of the present invention, a real-time automatic control silicon wafer production method is provided.

In one or more embodiments, preferably, the real-time automatically controlled silicon wafer production method includes:

Use the robot to position the silicon rod, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue the command to complete the sticking;

After the robot receives the stick-sticking completion command, the robot automatically carries out transportation and cutting. After completing the silicon wafer cutting, it issues a slicing completion command;

After the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through the degumming machine and issues the command to complete the degumming;

After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafers through the arranging machine and forms them into the second target degummed silicon wafers, and issues the command to complete the arrangement;

After the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through the cleaning machine to form a cleaned silicon wafer, and issues a silicon wafer cleaning completion command;

After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse.

In one or more embodiments, preferably, the robot is used to position the silicon rod, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue a command to complete the stick sticking, Specifically include:

Obtain the initial position coordinates of the silicon rod, and automatically move the silicon rod to the preset placement position coordinates through the robot;

Calculate the position of the silicon rod using a first calculation formula according to the initial position coordinates and the placement position coordinates;

The robot automatically uses glue to adhere the dovetail base and the silicon rod, and collects the current value of the glue thickness;

Set the glue coating coefficient and glue coating constant, and calculate the glue feeding speed given value through the second calculation formula;

Calculate the glue coating uniformity through the third calculation formula;

Calculate the amount of glue overflow through the fourth calculation formula;

Calculate the target value of the glue coating speed through the fifth calculation formula;

According to the position of the silicon rod, the target value of the glue coating speed and the given value of the glue feeding speed, the machine The human automatically adjusts the glue feeding process, completes the fixation of the silicon rod, and issues the command to complete the stick sticking;

The first calculation formula is:
X=Fx-Cx,

Wherein, X is the position of the silicon rod, Cx is the initial position coordinate, and Fx is the placement position coordinate;

The second calculation formula is:
V _ref =K _T (H _ref -H _d )+A _T ,

Among them, V _ref is the given value of the glue feeding speed, H _ref is the preset given value of glue coating thickness, H _d is the current value of the glue coating thickness, K _T is the glue coating coefficient, and A _T is The glue coating constant;

The third calculation formula is:
J=max(|VV ₀ |),

Among them, J is the glue coating uniformity, V is the glue coating speed collected in real time, max is the maximum value function per unit time, and V ₀ is the initial value of the glue coating speed;

The fourth calculation formula is:
Y=P(VV _ref )-G,

Among them, Y is the glue overflow amount, V is the glue coating speed collected in real time, P is the preset glue feeding correction coefficient, and G is the preset glue feeding constant;

The fifth calculation formula is:
V _p =arg max(k ₁ Jk ₂ Y),

Among them, V _p is the target value of the glue coating speed, Y is the glue coating overflow amount, arg max (k ₁ Jk ₂ Y) is the calculated value of k ₁ Jk ₂ Y corresponding to the entire glue coating speed, k ₁ is the preset first gluing coefficient; k ₂ is the preset second gluing coefficient.

In one or more embodiments, preferably, after the robot receives the stick stick completion command, the robot automatically transports and cuts the silicon wafer, and after completing the silicon wafer cutting, issues a slicing completion command, which specifically includes:

After the robot receives the stick-gluing command, it waits according to the preset time interval and then automatically Issue a command to move the silicon rod;

After the robot receives the command to move the silicon rod, the robot delivers the silicon rod to the slicing workshop according to the preset route;

Automatically spray and clean the silicon rods in the slicing workshop;

Use the sixth calculation formula to calculate the target cutting position of the cleaned silicon rod;

According to the target cutting position, the silicon rod is cut into several silicon wafers of preset thickness using the back and forth grinding of diamond on the diamond wire;

After completing the silicon wafer cutting, issue the complete slicing command;

The sixth calculation formula is:
W＝M+X，

Wherein, W is the target cutting position, and M is the preset thickness.

In one or more embodiments, preferably, after the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through a degumming machine and issues a command to complete the degumming, specifically including:

After the robot receives the command to complete the slicing, the robot sends the cut silicon rods to the degumming machine;

The silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;

Clean the degummed silicon wafer to form the first target degummed silicon wafer;

Issue the complete ungluing command.

In one or more embodiments, preferably, after the robot receives the command to complete degumming, the first target degummed silicon wafers are arranged by a arranging machine and formed into a second target degummed silicon wafer, Issue the command to complete the arrangement, including:

After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafers into the slot through the arranging machine;

Place the first target degummed silicon wafers at equal intervals through the wafer arrangement machine;

Clean the first target degummed silicon wafers placed at equal intervals to form the second target degummed silicon wafer;

Issue the complete alignment command.

In one or more embodiments, preferably, after the robot receives the completion arrangement command, the second target degummed silicon wafer is cleaned by a cleaning machine to form a cleaned silicon wafer, and the silicon wafer cleaning is issued. Complete the command, including:

After the robot receives the order to complete the arrangement, it puts the second target degummed silicon wafer and the card slot into the cleaning machine;

Clean the second target degummed silicon wafer through cleaning agent and ultrasonic waves;

Drying the cleaned second target degummed silicon wafer to obtain the cleaned silicon wafer;

Issue the silicon wafer cleaning completion command.

In one or more embodiments, preferably, after the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse, specifically including:

After the robot obtains the silicon wafer cleaning completion command, it automatically performs abnormal analysis on the cleaning completed silicon wafer to obtain the silicon rod positioning accuracy and silicon rod abnormality category;

Use the seventh calculation formula to calculate the quality grade of the silicon wafer;

Set the preset real-time correction coefficient and the preset real-time correction index;

According to the quality level, use the eighth calculation formula to calculate the operating speed adjustment coefficient;

Adjust the action speed of the robot during the handling process according to the operating speed adjustment coefficient;

Robots are used to automatically package the silicon rods according to the abnormal categories and transport them to the warehouse;

The seventh calculation formula is:
_Zk =D+B,

Among them, Z _k is the quality level, D is the positioning accuracy of the silicon rod, and B is the abnormal category of the silicon rod;

The eighth calculation formula is:
T _K =k ₀ Z _k +c ₀ ,

Among them, T _K is the operating speed adjustment coefficient, Z _k is the quality level, and k ₀ is the preset actual value. real-time correction coefficient, c ₀ is the preset real-time correction index.

According to a second aspect of the embodiment of the present invention, a real-time automatic control silicon wafer production system is provided.

In one or more embodiments, preferably, the real-time automatically controlled silicon wafer production system includes:

The dipping module is used to position the silicon rod through the robot, obtain the position of the silicon rod, and set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue the stick sticking command;

The slicing module is used to automatically transport and cut the robot after receiving the stick stick command, and after completing the silicon wafer cutting, issue the slicing command;

The degumming module is used to form the first target degummed silicon wafer through the degumming machine after the robot receives the command to complete the slicing, and issue the command to complete the degumming;

The wafer arrangement module is used to arrange the first target degummed silicon wafers through the arranging machine after the robot receives the degumming completion command, and form the second target degumming silicon wafers, and issue the completion arrangement command;

A cleaning module, used to clean the second target degummed silicon wafer through a cleaning machine after the robot receives the completion arrangement command, form a cleaned silicon wafer, and issue a silicon wafer cleaning completion command;

The package inspection module is used to automatically complete the classification and quality analysis of all silicon wafers through the robot after the robot obtains the silicon wafer cleaning completion command, and then packages and transports them to the warehouse.

According to a third aspect of the embodiment of the present invention, there is provided a computer-readable storage medium on which computer program instructions are stored, and when the computer program instructions are executed by a processor, the computer program instructions implement any one of the first aspects of the embodiment of the present invention. method described.

According to a fourth aspect of an embodiment of the present invention, an electronic device is provided, including a memory and a processor, the memory being used to store one or more computer program instructions, wherein the one or more computer program instructions are processed by the The processor is executed to implement the method described in any one of the first aspects of the embodiments of the present invention.

The technical solutions provided by the embodiments of the present invention may include the following beneficial effects:

In the embodiment of the present invention, a robot-based monocrystalline silicon production method and system are provided, which improves production efficiency and reduces human costs by automatically completing the control of materials and equipment in multiple production processes. Probability of error.

In the embodiment of the present invention, a robot execution method for online monocrystalline silicon quality control is provided, which can automatically control the current production process online.

Additional features and advantages of the invention will be set forth in the description which follows, and in part will be apparent from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention may be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.

The technical solution of the present invention will be further described in detail below through the accompanying drawings and examples.

Description of the drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below. Obviously, the drawings in the following description are only some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained based on these drawings without exerting creative efforts.

Figure 1 is a flow chart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention.

Figure 2 is a real-time automatic control silicon wafer production method according to an embodiment of the present invention, in which a robot is used to position the silicon rod, obtain the position of the silicon rod, and set the glue coating speed target value to automatically glue and adhere the silicon rod. , the flow chart of issuing the sticky stick command.

Figure 3 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot receives the stick stick command, the robot automatically transports and cuts the silicon wafer. After completing the silicon wafer cutting, it sends a complete slicing command. Flowchart of the command.

Figure 4 is a flowchart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention, in which after the robot receives the completion slicing command, it forms the first target degumming silicon wafer through the degumming machine and issues the completion degumming command. picture.

Figure 5 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention. After the robot receives the degumming completion command, it arranges the first target degummed silicon wafers through the arranging machine. And form the second target degumming silicon wafer, and issue the flow chart to complete the arrangement command.

Figure 6 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention. After the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through a cleaning machine to complete the cleaning process. Silicon wafer, flow chart for issuing silicon wafer cleaning completion command.

Figure 7 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them. Flow chart to warehouse.

Figure 8 is a structural diagram of a real-time automatic controlled silicon wafer production system according to an embodiment of the present invention.

Figure 9 is a structural diagram of an electronic device in one embodiment of the present invention.

Detailed ways

Some of the processes described in the specification and claims of the present invention and the above-mentioned drawings contain multiple operations that appear in a specific order, but it should be clearly understood that these operations may not be performed in the order in which they appear herein. Execution or parallel execution, the sequence numbers of operations, such as 101, 102, etc., are only used to distinguish different operations. The sequence numbers themselves do not represent any execution order. Additionally, these processes may include more or fewer operations, and the operations may be performed sequentially or in parallel. It should be noted that the descriptions such as "first" and "second" in this article are used to distinguish different messages, devices, modules, etc., and do not represent the order, nor do they limit "first" and "second" are different types.

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making creative efforts fall within the scope of protection of the present invention.

Single crystal silicon is a relatively active non-metallic element and an important component of crystal materials. It is at the forefront of the development of new materials. The main purpose of monocrystalline silicon wafers is to make solar cells and use photovoltaic power generation and heating. Monocrystalline silicon solar cells are also the fastest developed type of solar cell at present. Its composition and production process have been finalized, and its products have been widely used in daily life, space and some special ground facilities. Because solar energy has many advantages such as cleanliness, environmental protection, and convenience, solar energy utilization technology has made great progress in research and development, commercial production, and market development in the past thirty years, and has become one of the world's emerging industries with rapid and stable development.

Before the technology of the present invention, the existing technology mainly used human power to produce single crystal silicon wafers. The efficiency was low, the accuracy was not high, and human errors often occurred.

In embodiments of the present invention, a real-time automatic control silicon wafer production method, system, medium and equipment are provided. This solution improves the production efficiency and reliability of monocrystalline silicon wafers through automatic control of the online monocrystalline silicon wafer production process, combined with automatic robot identification and judgment.

According to a first aspect of the embodiment of the present invention, a real-time automatic control silicon wafer production method is provided.

Figure 1 is a flow chart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention.

In one or more embodiments, preferably, the real-time automatically controlled silicon wafer production method includes:

S101. Use the robot to position the silicon rod, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue the completion stick sticking command;

S102. After the robot receives the stick-gluing completion command, the robot automatically carries out transportation and cutting. After completing the silicon wafer cutting, it issues a slicing completion command;

S103. After the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through the degumming machine and issues the command to complete the degumming;

S104. After the robot receives the command to complete the degumming, it arranges the first target degummed silicon wafers through the arranging machine and forms them into the second target degummed silicon wafers, and issues the command to complete the arrangement;

S105. After the robot receives the arrangement completion command, it cleans the second target degummed silicon wafer through the cleaning machine to form a cleaned silicon wafer, and issues a silicon wafer cleaning completion command;

S106. After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse.

In the embodiments of the present invention, problems such as low precision and easy misoperation when manual production is used in the past are solved. Efficient and reliable silicon wafer production is achieved through automatic process control. During the specific execution process, All the robot commands are executed and the equipment is transported and operated. The robot runs according to a fixed action path, and after the robot obtains the corresponding execution command, it continues to run to the next position in the action path. Throughout the action path, Degumming machines, wafer arranging machines and cleaning machines are placed for degumming, arranging and cleaning of silicon wafers. After the robot reaches the designated position in the action path, it starts the corresponding steps or processes and completes the entire operation process.

Figure 2 is a real-time automatic control silicon wafer production method according to an embodiment of the present invention, in which a robot is used to position the silicon rod, obtain the position of the silicon rod, and set the glue coating speed target value to automatically glue and adhere the silicon rod. , the flow chart of issuing the sticky stick command.

As shown in Figure 2, in one or more embodiments, preferably, after the robot receives the stick stick completion command, the robot automatically carries out transportation and cutting, and after completing the silicon wafer cutting, a completion slicing command is issued. , specifically including:

S201. Obtain the initial position coordinates of the silicon rod, and automatically move the silicon rod to the preset placement position coordinates through the robot;

Among them, the initial position coordinates of the silicon rod are the initially marked installation position of the gluing equipment, which is generally the side of the gluing equipment closest to the robot. Therefore, from the perspective of the robot, there will be an initial position coordinate and a placement position coordinate. The placement position coordinate is a preset placement position after the actual movement.

S202. Calculate the position of the silicon rod using the first calculation formula according to the initial position coordinates and the placement position coordinates;

S203. The robot automatically uses glue to adhere the dovetail base and the silicon rod, and collects the current value of the glue thickness;

Among them, the dovetail base is the base of the glue coating equipment and is used for adhesion with the silicon rod.

S204. Set the glue coating coefficient and glue coating constant, and calculate the glue feeding speed given value through the second calculation formula;

Among them, the gluing coefficient and gluing constant are a number set based on experience and are positive integers.

S205. Calculate the glue coating uniformity through the third calculation formula;

S206. Calculate the glue overflow amount through the fourth calculation formula;

S207. Calculate the target value of the glue coating speed through the fifth calculation formula;

S208. Adjust the robot's automatic glue feeding process according to the position of the silicon rod, the glue coating speed target value and the glue feeding speed given value, complete the fixation of the silicon rod, and issue the stick stick completion command;

The first calculation formula is:
X=Fx-Cx,

Wherein, X is the position of the silicon rod, Cx is the initial position coordinate, and Fx is the placement position coordinate;

The second calculation formula is:
V _ref =K _T (H _ref -H _d )+A _T ,

Among them, V _ref is the given value of the glue feeding speed, H _ref is the preset given value of glue coating thickness, H _d is the current value of the glue coating thickness, K _T is the glue coating coefficient, and A _T is The glue coating constant;

The third calculation formula is:
J=max(|VV ₀ |),

Among them, J is the glue coating uniformity, V is the glue coating speed collected in real time, max is the maximum value function per unit time, and V ₀ is the initial value of the glue coating speed;

The fourth calculation formula is:
Y=P(VV _ref )-G,

Among them, Y is the glue overflow amount, V is the glue coating speed collected in real time, P is the preset glue feeding correction coefficient, and G is the preset glue feeding constant;

The fifth calculation formula is:
V _p =arg max(k ₁ Jk ₂ Y),

Among them, V _p is the target value of the glue coating speed, Y is the glue coating overflow amount, arg max (k ₁ Jk ₂ Y) is the calculated value of k ₁ Jk ₂ Y corresponding to the entire glue coating speed, k ₁ is the preset first gluing coefficient; k ₂ is the preset second gluing coefficient.

In the embodiment of the present invention, in order to ensure the thickness, uniformity and overflow amount of the glue coating process and improve the safety of silicon rod cutting, a method of automatically controlling the real-time glue coating speed and glue supply amount is adopted. Among them, the initial value of the gluing speed is a preset speed, but the entire gluing process is dynamic, so the gluing speed will be fine-tuned during the process. The preset glue feeding correction coefficient is the coefficient set for the glue coating process control. It is generally 1. When the glue coating speed needs to be adjusted quickly, the preset glue feeding correction coefficient will be greater than 1, and the preset glue feeding correction coefficient will be the smallest. The value can be set to 0, and the preset glue supply constant is generally set according to the parameters recommended by the manufacturer of the glue coating equipment. Combined with the specific second calculation formula, the third calculation formula, the fourth calculation formula and the fifth calculation formula, the adaptive control of the entire glue feeding process is completed, and efficient and accurate silicon rod sticking is achieved through the robot. In addition, in order to enable subsequent The process can be started accurately and the specific stick position is recorded.

Among them, k ₁ is the preset first gluing coefficient; k ₂ is the preset second gluing coefficient. The initial values are set to 0.5. During the gluing process, they can be adjusted to control the amount of glue overflow and The degree of concern between the uniformity of glue application.

Figure 3 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot receives the stick stick command, the robot automatically transports and cuts the silicon wafer. After completing the silicon wafer cutting, it sends a complete slicing command. Flowchart of the command.

As shown in Figure 3, in one or more embodiments, preferably, after the robot receives the stick stick completion command, the robot automatically carries out transportation and cutting, and after completing the silicon wafer cutting, a completion slicing command is issued. , specifically including:

S301. After the robot receives the stick-sticking command, it waits at a preset time interval and then automatically issues a moving silicon stick command;

S302. After the robot receives the command to move the silicon rod, the robot delivers the silicon rod to the slicing workshop according to the preset route;

S303. Automatically spray and clean the silicon rods in the slicing workshop;

S304. Use the sixth calculation formula to calculate the target cutting position of the cleaned silicon rod;

S305. According to the target cutting position, use the back and forth walking grinding of diamond on the diamond wire to cut the silicon rod into several silicon wafers of preset thickness;

S306. After completing the silicon wafer cutting, issue the completion slicing command;

The sixth calculation formula is:
W＝M+X，

Wherein, W is the target cutting position, and M is the preset thickness.

In the embodiment of the present invention, automatic robots are used for automatic transportation and automatic spraying, and automatic cutting is performed in conjunction with preset cutting positions to form multiple standard thin silicon wafers with uniform thickness. The preset thickness is The required thickness when cutting is preset before cutting. There is no dynamic adjustment during each cutting process. The entire process is not realized manually, with high efficiency and high accuracy.

Figure 4 is a flowchart of a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention, in which after the robot receives the completion slicing command, it forms the first target degumming silicon wafer through the degumming machine and issues the completion degumming command. picture.

As shown in Figure 4, in one or more embodiments, preferably, after the robot receives the completion slicing command, the first target degumming silicon wafer is formed by a degumming machine, and a completion degumming command is issued, specifically including :

S401. After the robot receives the command to complete the slicing, the robot sends the cut silicon rod to the degumming machine;

S402. The silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;

S403. Clean the degummed silicon wafer to form the first target degummed silicon wafer;

S404. Issue the command to complete degumming.

In the embodiment of the present invention, after the cutting is completed, the cut silicon rod is sent to the degumming machine, and the silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid, and the silicon wafer is pre-cleaned. The process is all performed by robots.

Figure 5 shows a real-time automatic controlled silicon wafer production method according to an embodiment of the present invention. After the robot receives the degumming completion command, it arranges the first target degummed silicon wafers through the arranging machine and forms a The second target degummes the silicon wafer and issues the flow chart to complete the arrangement command.

As shown in Figure 5, in one or more embodiments, preferably, the robot receives the completed After the degumming command is generated, the first target degummed silicon wafers are arranged through the arranging machine and formed into the second target degummed silicon wafers, and an order to complete the arrangement is issued, which specifically includes:

S501. After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafer into the card slot through the arranging machine;

S502. Place the first target degummed silicon wafers at equal intervals through the chip arrangement machine;

S503. Clean the first target degummed silicon wafers placed at equal intervals to form the second target degummed silicon wafer;

S504. Issue the completion arrangement command.

In the embodiment of the present invention, the degummed silicon wafers are arranged into the card slot through a wafer arrangement machine, so that the silicon wafers are placed at equidistant intervals.

Figure 6 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention. After the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through a cleaning machine to complete the cleaning process. Silicon wafer, flow chart for issuing silicon wafer cleaning completion command.

As shown in Figure 6, in one or more embodiments, preferably, after the robot receives the completion arrangement command, the second target degummed silicon wafer is cleaned by a cleaning machine to form a cleaned silicon wafer. wafer, issue a silicon wafer cleaning completion command, including:

S601. After the robot receives the completion arrangement command, put the second target degummed silicon wafer and the card slot into the cleaning machine;

S602. Clean the second target degummed silicon wafer through cleaning agent and ultrasonic waves;

S603. Dry the cleaned second target degummed silicon wafer to obtain the cleaned silicon wafer;

S604. Issue the silicon wafer cleaning completion command.

In the embodiment of the present invention, the silicon wafer and the card slot are passed through a cleaning machine to remove and clean the oxide layer and impurities on the surface of the silicon wafer. The process requires cleaning with a cleaning agent and ultrasonic cleaning.

Figure 7 shows a real-time automatic control silicon wafer production method according to an embodiment of the present invention. After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality of all silicon wafers. Quantity analysis, packaging and transportation to the warehouse flow chart.

As shown in Figure 7, in one or more embodiments, preferably, after the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to Warehouse, specifically including:

S701. After the robot obtains the silicon wafer cleaning completion command, it automatically performs an abnormality analysis on the cleaning completed silicon wafer to obtain the silicon rod positioning accuracy and silicon rod abnormality category;

S702. Calculate the quality grade of the silicon wafer using the seventh calculation formula;

S703. Set the preset real-time correction coefficient and the preset real-time correction index;

S704. According to the quality level, use the eighth calculation formula to calculate the operating speed adjustment coefficient;

S705. Adjust the action speed of the robot during the transportation process according to the operating speed adjustment coefficient;

S706. Automatically package the silicon rod according to the abnormal category of the silicon rod through the robot and transport it to the warehouse;

The seventh calculation formula is:
_Zk =D+B,

Among them, Z _k is the quality level, D is the positioning accuracy of the silicon rod, and B is the abnormal category of the silicon rod;

The eighth calculation formula is:
T _K =k ₀ Z _k +c ₀ ,

Wherein, T _K is the running speed adjustment coefficient, Z _k is the quality level, k ₀ is the preset real-time correction coefficient, and c ₀ is the preset real-time correction index.

In the embodiment of the present invention, by automatically analyzing the current quality level and abnormal categories of silicon rods, automatically classifying and packaging, and adjusting the operating processes of all robots, the entire silicon wafer production process can be automatically corrected during operation. , and then adjust the operating speed of silicon wafers produced through robot automation while ensuring quality; specifically, k ₀ is the preset real-time correction coefficient, and its initial value is 1. When it is necessary to increase the quality control of the robot, the The preset real-time correction coefficient increases, but the maximum value does not exceed 2. The minimum value of the preset real-time correction coefficient is 0; c ₀ is the preset real-time correction index, and its initial value is 0. The initial value is 0. When modification is needed, set it directly on the robot.

According to a second aspect of the embodiment of the present invention, a real-time automatic control silicon wafer production system is provided.

Figure 8 is a structural diagram of a real-time automatic controlled silicon wafer production system according to an embodiment of the present invention.

In one or more embodiments, preferably, the real-time automatically controlled silicon wafer production system includes:

The stick dipping module 801 is used to position the silicon rod through a robot, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue a command to complete the stick sticking;

The slicing module 802 is used to automatically transport and cut through the robot after the robot receives the stick-gluing command. After completing the silicon wafer cutting, issue the slicing command;

The degumming module 803 is used to form the first target degummed silicon wafer through the degumming machine after the robot receives the complete slicing command, and issue a complete degumming command;

The wafer arrangement module 804 is used to arrange the first target degummed silicon wafer through the arranging machine after the robot receives the complete degumming command, and form it into the second target degummed silicon wafer, and issue the completion arrangement command;

The cleaning module 805 is used to clean the second target degummed silicon wafer through the cleaning machine after the robot receives the completion arrangement command, form a cleaned silicon wafer, and issue a silicon wafer cleaning completion command;

The package inspection module 806 is used to automatically complete the classification and quality analysis of all silicon wafers through the robot after the robot obtains the silicon wafer cleaning completion command, and package and transport them to the warehouse.

In an embodiment of the present invention, a real-time automatic control system for producing silicon rods into silicon wafers is provided, which automatically controls the entire silicon wafer production process through real-time robots to improve production efficiency.

Further, the dip stick module 801 includes:

The silicon rod placement unit obtains the initial position coordinates of the silicon rod and automatically moves the silicon rod to the preset placement position coordinates through the robot;

A silicon rod position unit that uses a first calculation formula to calculate the position of the silicon rod according to the initial position coordinates and the placement position coordinates;

The glue coating and collection unit automatically uses glue to adhere the dovetail base and the silicon rod through a robot, and collects Set the current value of glue thickness;

The glue feeding speed calculation unit sets the glue coating coefficient and glue coating constant, and calculates the glue feeding speed given value through the second calculation formula;

The glue coating uniformity calculation unit calculates the glue coating uniformity through the third calculation formula;

The glue overflow calculation unit calculates the glue overflow through the fourth calculation formula;

The glue coating speed target value calculation unit calculates the glue coating speed target value through the fifth calculation formula;

The completion sticking stick command sending unit performs automatic glue feeding process adjustment of the robot according to the position of the silicon rod, the glue coating speed target value and the glue feeding speed given value, completes the fixation of the silicon rod, and issues the completion stick sticking command. Order;

The first calculation formula is:
X=Fx-Cx,

Wherein, X is the position of the silicon rod, Cx is the initial position coordinate, and Fx is the placement position coordinate;

The second calculation formula is:
V _ref =K _T (H _ref -H _d )+A _T ,

Among them, V _ref is the given value of the glue feeding speed, H _ref is the preset given value of glue coating thickness, H _d is the current value of the glue coating thickness, K _T is the glue coating coefficient, and A _T is The glue coating constant;

The third calculation formula is:
J=max(|VV ₀ |),

Among them, J is the glue coating uniformity, V is the glue coating speed collected in real time, max is the maximum value function per unit time, and V ₀ is the initial value of the glue coating speed;

The fourth calculation formula is:
Y=P(VV _ref )-G,

Among them, Y is the glue overflow amount, V is the glue coating speed collected in real time, P is the preset glue feeding correction coefficient, and G is the preset glue feeding constant;

The fifth calculation formula is:
V _p =arg max(k ₁ Jk ₂ Y),

Among them, V _p is the target value of the glue coating speed, Y is the glue coating overflow amount, arg max (k ₁ Jk ₂ Y) is the calculated value of k ₁ Jk ₂ Y corresponding to the entire glue coating speed, k ₁ is the preset first gluing coefficient; k ₂ is the preset second gluing coefficient.

Further, the slicing module 802 includes:

The moving silicon rod command issuing unit, after the robot receives the stick sticking command, waits according to the preset time interval and then automatically issues the moving silicon rod command;

The silicon rod distribution unit, after the robot receives the command to move the silicon rod, distributes the silicon rod to the slicing workshop through the robot according to the preset route;

An automatic spray cleaning unit is used to automatically spray and clean the silicon rods in the slicing workshop;

The target cutting position calculation unit uses the sixth calculation formula to calculate the target cutting position of the cleaned silicon rod;

The silicon wafer generation unit with a preset thickness cuts the silicon rod into several silicon wafers with a preset thickness by using the back and forth grinding of diamonds on a diamond wire according to the target cutting position;

The silicon wafer issuing unit with a preset thickness issues the slicing completion command after completing the silicon wafer cutting;

The sixth calculation formula is:
W＝M+X，

Wherein, W is the target cutting position, and M is the preset thickness.

Further, the degumming module 803 includes:

The silicon rod is sent to the degumming unit. After the robot receives the slicing completion command, the cut silicon rod is sent to the degumming machine through the robot;

The degumming silicon wafer generation unit separates the silicon wafer from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;

A first target degummed silicon wafer generating unit cleans the degummed silicon wafer to form the first target degummed silicon wafer;

The degumming completion command issuing unit issues the degumming completion command.

Further, the sheet arrangement module 804 includes:

The silicon wafers are arranged in a card slot unit. After the robot receives the command to complete degumming, the first target degummed silicon wafers are arranged into the card slot through the arranging machine;

An equal-spaced placement unit uses the chip arranger to place the first target degummed silicon wafers at equal intervals;

The second target degummed silicon wafer generating unit cleans the first target degummed silicon wafers placed at equal intervals to form the second target degummed silicon wafer;

The completion arrangement command issuing unit issues the completion arrangement command.

Further, the cleaning module 805 includes:

Prepare the cleaning unit, and after the robot receives the completion arrangement command, put the second target degummed silicon wafer and the card slot into the cleaning machine;

The degumming silicon wafer cleaning unit cleans the second target degumming silicon wafer through cleaning agent and ultrasonic waves;

A drying unit dries the cleaned second target degummed silicon wafer to obtain the cleaned silicon wafer;

The silicon wafer cleaning completion command issuing unit issues the silicon wafer cleaning completion command.

Further, the package inspection module 806 includes:

The silicon rod abnormality distinguishing unit, after the robot obtains the silicon wafer cleaning completion command, automatically performs abnormality analysis on the cleaning completed silicon wafer to obtain the silicon rod positioning accuracy and silicon rod abnormality category;

The quality grade calculation unit uses the seventh calculation formula to calculate the quality grade of the silicon wafer;

The real-time correction index setting unit sets the preset real-time correction coefficient and the preset real-time correction index;

The operating speed adjustment coefficient calculation unit uses the eighth calculation formula to calculate the operating speed adjustment coefficient according to the quality level;

An action speed adjustment unit is used to adjust the action speed of the robot during transportation according to the operating speed adjustment coefficient;

The transfer warehouse unit uses robots to automatically pack and transfer the silicon rods according to the abnormal category. to the warehouse;

The seventh calculation formula is:
_Zk =D+B,

Among them, Z _k is the quality level, D is the positioning accuracy of the silicon rod, and B is the abnormal category of the silicon rod;

The eighth calculation formula is:
T _K =k ₀ Z _k +c ₀ ,

Wherein, T _K is the running speed adjustment coefficient, Z _k is the quality level, k ₀ is the preset real-time correction coefficient, and c ₀ is the preset real-time correction index.

According to a third aspect of the embodiment of the present invention, there is provided a computer-readable storage medium on which computer program instructions are stored, and when the computer program instructions are executed by a processor, the computer program instructions implement any one of the first aspects of the embodiment of the present invention. method described.

According to a fourth aspect of embodiments of the present invention, an electronic device is provided. Figure 9 is a structural diagram of an electronic device in one embodiment of the present invention. The electronic equipment shown in Figure 9 is a universal real-time automatic silicon wafer production control device, which includes a universal computer hardware structure, which at least includes a processor 901 and a memory 902. The processor 901 and the memory 902 are connected by a bus 903. Memory 902 is adapted to store instructions or programs executable by processor 901. The processor 901 may be an independent microprocessor or a collection of one or more microprocessors. Thus, the processor 901 executes the instructions stored in the memory 902 to execute the method flow of the embodiment of the present invention as described above to process data and control other devices. The bus 903 connects the above-mentioned plurality of components together while connecting the above-mentioned components to the display controller 904 and the display device and the input/output (I/O) device 905. Input/output (I/O) device 905 may be a mouse, keyboard, modem, network interface, touch input device, motion sensing input device, printer, and other devices known in the art. Typically, input/output devices 905 are connected to the system through an input/output (I/O) controller 906 .

The technical solutions provided by the embodiments of the present invention may include the following beneficial effects:

In the embodiment of the present invention, a robot-based single crystal silicon production method and system are provided. Automatically complete the control of materials and equipment in multiple production processes, improve production efficiency and reduce the probability of human errors.

In the embodiment of the present invention, a robot execution method for online monocrystalline silicon quality control is provided, which can automatically control the current production process online.

Those skilled in the art will appreciate that embodiments of the present invention may be provided as methods, systems, or computer program products. Thus, the invention may take the form of an entirely hardware embodiment, an entirely software embodiment, or an embodiment combining software and hardware aspects. Furthermore, the invention may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, magnetic disk storage, optical storage, etc.) embodying computer-usable program code therein.

The invention is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the invention. It will be understood that each process and/or block in the flowchart illustrations and/or block diagrams, and combinations of processes and/or blocks in the flowchart illustrations and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing device to produce a machine, such that the instructions executed by the processor of the computer or other programmable data processing device produce a use A device for realizing the functions specified in one process or multiple processes of the flowchart and/or one block or multiple blocks of the block diagram.

These computer program instructions may also be stored in a computer-readable memory that causes a computer or other programmable data processing apparatus to operate in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including the instruction means, the instructions The device implements the functions specified in a process or processes of the flowchart and/or a block or blocks of the block diagram.

These computer program instructions may also be loaded onto a computer or other programmable data processing device, causing a series of operating steps to be performed on the computer or other programmable device to produce computer-implemented processing, thereby executing on the computer or other programmable device. Instructions provide steps for implementing the functions specified in a process or processes of a flowchart diagram and/or a block or blocks of a block diagram.

Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the invention. In this way, if these modifications and variations of the present invention fall within the claims and claims of the present invention, Within the scope of equivalent technologies, the present invention is also intended to include these changes and modifications.

Claims (10)

1. A real-time automatic control silicon wafer production method, characterized in that the method includes:

   Use the robot to position the silicon rod, obtain the position of the silicon rod, set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue the command to complete the sticking;

   After the robot receives the stick-sticking completion command, the robot automatically carries out transportation and cutting. After completing the silicon wafer cutting, it issues a slicing completion command;

   After the robot receives the command to complete the slicing, it forms the first target degummed silicon wafer through the degumming machine and issues the command to complete the degumming;

   After the robot receives the command to complete degumming, it arranges the first target degummed silicon wafers through the arranging machine and forms them into the second target degummed silicon wafers, and issues the command to complete the arrangement;

   After the robot receives the completion arrangement command, it cleans the second target degummed silicon wafer through the cleaning machine to form a cleaned silicon wafer, and issues a silicon wafer cleaning completion command;

   After the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, and packages and transports them to the warehouse.
2. A real-time automatic control silicon wafer production method as claimed in claim 1, characterized in that the robot is used to position the silicon rod, obtain the position of the silicon rod, and set the glue coating speed target value to automatically coat the silicon rod. Glue and adhesion, issue commands to complete the sticky stick, including:

   Obtain the initial position coordinates of the silicon rod, and automatically move the silicon rod to the preset placement position coordinates through the robot;

   Calculate the position of the silicon rod using a first calculation formula according to the initial position coordinates and the placement position coordinates;

   The robot automatically uses glue to adhere the dovetail base and the silicon rod, and collects the current value of the glue thickness;

   Set the glue coating coefficient and glue coating constant, and calculate the glue feeding speed given value through the second calculation formula;

   Calculate the glue coating uniformity through the third calculation formula;

   Calculate the amount of glue overflow through the fourth calculation formula;

   Calculate the target value of the glue coating speed through the fifth calculation formula;

   According to the position of the silicon rod, the glue coating speed target value and the glue feeding speed given value, the robot automatically adjusts the glue feeding process, completes the fixation of the silicon rod, and issues the stick stick completion command;

   The first calculation formula is:
   X=Fx-Cx,

   Wherein, X is the position of the silicon rod, Cx is the initial position coordinate, and Fx is the placement position coordinate;

   The second calculation formula is:
   V _ref =K _T (H _ref -H _d )+A _T ,

   Among them, V _ref is the given value of the glue feeding speed, H _ref is the preset given value of glue coating thickness, H _d is the current value of the glue coating thickness, K _T is the glue coating coefficient, and A _T is The glue coating constant;

   The third calculation formula is:
   J=max(|VV ₀ |),

   Among them, J is the glue coating uniformity, V is the glue coating speed collected in real time, max is the maximum value function per unit time, and V ₀ is the initial value of the glue coating speed;

   The fourth calculation formula is:
   Y=P(VV _ref )-G,

   Among them, Y is the glue overflow amount, V is the glue coating speed collected in real time, P is the preset glue feeding correction coefficient, and G is the preset glue feeding constant;

   The fifth calculation formula is:
   V _p =arg max(k ₁ Jk ₂ Y),

   Among them, V _p is the target value of the glue coating speed, Y is the glue coating overflow amount, arg max (k ₁ Jk ₂ Y) is the calculated value of k ₁ Jk ₂ Y corresponding to the entire glue coating speed, k ₁ is the preset first gluing coefficient; k ₂ is the preset second gluing coefficient.
3. A real-time automatic control silicon wafer production method as claimed in claim 1, characterized in that: After the robot receives the stick-sticking command, the robot automatically transports and cuts the silicon wafer. After completing the silicon wafer cutting, it issues a slicing command, which specifically includes:

   After the robot receives the stick-sticking command, it waits according to the preset time interval and then automatically issues a moving silicon stick command;

   After the robot receives the command to move the silicon rod, the robot delivers the silicon rod to the slicing workshop according to the preset route;

   Automatically spray and clean the silicon rods in the slicing workshop;

   Use the sixth calculation formula to calculate the target cutting position of the cleaned silicon rod;

   According to the target cutting position, the silicon rod is cut into several silicon wafers of preset thickness using the back and forth grinding of diamond on the diamond wire;

   After completing the silicon wafer cutting, issue the complete slicing command;

   The sixth calculation formula is:
   W＝M+X，

   Wherein, W is the target cutting position, and M is the preset thickness.
4. A real-time automatic control silicon wafer production method as claimed in claim 1, characterized in that, after the robot receives the completion slicing command, it forms the first target degumming silicon wafer through the degumming machine and issues a completion degumming command. Commands, specifically include:

   After the robot receives the command to complete the slicing, the robot sends the cut silicon rods to the degumming machine;

   The silicon wafer is separated from the glue layer through the heating of the degumming machine, ultrasound and the action of lactic acid to form a degummed silicon wafer;

   Clean the degummed silicon wafer to form the first target degummed silicon wafer;

   Issue the complete ungluing command.
5. A real-time automatic control silicon wafer production method as claimed in claim 1, characterized in that, after the robot receives the degumming completion command, the first target degummed silicon wafers are arranged by a wafer arranger, And it is formed as the second target degummed silicon wafer, and a command to complete the arrangement is issued, specifically including:

   After the robot receives the command to complete degumming, the first target is degummed through the sequencer. The silicon wafer is arranged into the card slot;

   Place the first target degummed silicon wafers at equal intervals through the wafer arrangement machine;

   Clean the first target degummed silicon wafers placed at equal intervals to form the second target degummed silicon wafer;

   Issue the complete alignment command.
6. A real-time automatic control silicon wafer production method as claimed in claim 1, characterized in that, after the robot receives the completion arrangement command, the second target degummed silicon wafer is cleaned by a cleaning machine, Form the cleaning completion silicon wafer and issue the silicon wafer cleaning completion command, which includes:

   After the robot receives the order to complete the arrangement, it puts the second target degummed silicon wafer and the card slot into the cleaning machine;

   Clean the second target degummed silicon wafer through cleaning agent and ultrasonic waves;

   Drying the cleaned second target degummed silicon wafer to obtain the cleaned silicon wafer;

   Issue the silicon wafer cleaning completion command.
7. A real-time automatic control silicon wafer production method as claimed in claim 1, characterized in that, after the robot obtains the silicon wafer cleaning completion command, the robot automatically completes the classification and quality analysis of all silicon wafers, And packaged and transported to the warehouse, including:

   After the robot obtains the silicon wafer cleaning completion command, it automatically performs abnormal analysis on the cleaning completed silicon wafer to obtain the silicon rod positioning accuracy and silicon rod abnormality category;

   Use the seventh calculation formula to calculate the quality grade of the silicon wafer;

   Set the preset real-time correction coefficient and the preset real-time correction index;

   According to the quality level, use the eighth calculation formula to calculate the operating speed adjustment coefficient;

   Adjust the action speed of the robot during the handling process according to the operating speed adjustment coefficient;

   Robots are used to automatically package the silicon rods according to the abnormal categories and transport them to the warehouse;

   The seventh calculation formula is:
   _Zk =D+B,

   Among them, _Zk is the quality level, D is the positioning accuracy of the silicon rod, and B is the abnormality type of the silicon rod. Don't;

   The eighth calculation formula is:
   T _K =k ₀ Z _k +c ₀ ,

   Wherein, T _K is the running speed adjustment coefficient, Z _k is the quality level, k ₀ is the preset real-time correction coefficient, and c ₀ is the preset real-time correction index.
8. A real-time automatic control silicon wafer production system, characterized in that the system includes:

   The dipping module is used to position the silicon rod through the robot, obtain the position of the silicon rod, and set the glue coating speed target value, automatically glue and adhere the silicon rod, and issue the stick sticking command;

   The slicing module is used to automatically transport and cut the robot after receiving the stick stick command, and after completing the silicon wafer cutting, issue the slicing command;

   The degumming module is used to form the first target degummed silicon wafer through the degumming machine after the robot receives the command to complete the slicing, and issue the command to complete the degumming;

   The wafer arrangement module is used to arrange the first target degummed silicon wafers through the arranging machine after the robot receives the degumming completion command, and form the second target degumming silicon wafers, and issue the completion arrangement command;

   A cleaning module, used to clean the second target degummed silicon wafer through a cleaning machine after the robot receives the completion arrangement command, form a cleaned silicon wafer, and issue a silicon wafer cleaning completion command;

   The package inspection module is used to automatically complete the classification and quality analysis of all silicon wafers through the robot after the robot obtains the silicon wafer cleaning completion command, and then packages and transports them to the warehouse.
9. A computer-readable storage medium on which computer program instructions are stored, characterized in that, when executed by a processor, the computer program instructions implement the method according to any one of claims 1-7.
10. An electronic device, including a memory and a processor, characterized in that the memory is used to store one or more computer program instructions, wherein the one or more computer program instructions are executed by the processor to implement the rights The method described in any one of claims 1-7.