CN113113509A - Glue coating quality point-division detection process for solar silicon wafer processing - Google Patents
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- 238000001514 detection method Methods 0.000 title claims abstract description 173
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 92
- 239000010703 silicon Substances 0.000 title claims abstract description 92
- 238000000034 method Methods 0.000 title claims abstract description 59
- 230000008569 process Effects 0.000 title claims abstract description 45
- 239000003292 glue Substances 0.000 title claims abstract description 36
- 238000012545 processing Methods 0.000 title claims abstract description 27
- 239000011248 coating agent Substances 0.000 title claims abstract description 6
- 238000000576 coating method Methods 0.000 title claims abstract description 6
- 235000012431 wafers Nutrition 0.000 claims abstract description 87
- 239000000084 colloidal system Substances 0.000 claims abstract description 22
- 230000000694 effects Effects 0.000 claims abstract description 17
- 238000010073 coating (rubber) Methods 0.000 claims abstract description 9
- 238000001816 cooling Methods 0.000 claims abstract description 7
- 238000012360 testing method Methods 0.000 claims abstract description 7
- 230000008859 change Effects 0.000 claims description 12
- 238000003825 pressing Methods 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 230000001105 regulatory effect Effects 0.000 claims description 9
- 230000000007 visual effect Effects 0.000 claims description 8
- 210000000078 claw Anatomy 0.000 claims description 4
- 230000007246 mechanism Effects 0.000 claims description 4
- 238000007789 sealing Methods 0.000 claims description 3
- 238000004880 explosion Methods 0.000 claims description 2
- 238000004026 adhesive bonding Methods 0.000 abstract description 7
- 238000005070 sampling Methods 0.000 abstract description 3
- 210000004027 cell Anatomy 0.000 description 7
- 239000000463 material Substances 0.000 description 4
- 229910021419 crystalline silicon Inorganic materials 0.000 description 3
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000011179 visual inspection Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 210000002858 crystal cell Anatomy 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000007710 freezing Methods 0.000 description 1
- 230000008014 freezing Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000004321 preservation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The invention discloses a glue coating quality point-division detection process for processing a solar silicon wafer, which comprises the following steps: the method comprises the following steps: through carrying out the rubber coating to solar wafer to guarantee conveyor and carry out stable transport to the silicon chip, and the in-process of carrying cools off solar wafer through cooling device, step two: performing point-by-point detection on the solar silicon wafer after gluing, calculating and recording the average value of the detection result, and ensuring that the average value of the detection result of the silicon wafer is within the normal average value, and performing the third step: regulate and control the environment that wholly detects, adjust through atmospheric pressure, temperature and humidity to the testing environment is inside to the convenient whole numerical value that detects out the colloid changes, step four: and sorting the detected silicon wafers to finish the integral detection. According to the gluing quality point-dividing type detection process for processing the solar silicon wafer, the stability and the strength of the glue body in different environments are detected, multi-point sampling and contrast detection are carried out, and the overall good detection effect is ensured.
Description
Technical Field
The invention relates to the technical field of solar silicon wafer processing, in particular to a gluing quality point-division detection process for solar silicon wafer processing.
Background
The solar energy is inexhaustible renewable energy which is also clean energy, does not produce any environmental pollution and is effectively utilized by human beings; solar photovoltaic utilization is one of the most attractive projects in the research field with the fastest development and the most active development in recent years, and therefore, solar cells are researched and developed, mainly based on semiconductor materials, the solar cells are manufactured according to the working principle that photoelectric materials absorb light energy and then generate photoelectron conversion reaction, and the solar cells are divided into crystalline silicon and amorphous silicon according to different materials, wherein the crystalline silicon cells can be divided into single crystal cells and polycrystalline cells, the efficiency of the single crystal silicon is higher than that of the crystalline silicon, the silicon is the most ideal solar cell material, and the main reason that the solar cells mainly take silicon materials is also adopted.
But the rubber coating quality of solar energy silicon chip is inconvenient to carry out the branch point formula and detects, lead to whole in the in-process that detects the condition that appears lou examining easily, the holistic detection effect has been reduced, and whole in the in-process that detects, inconvenient temperature to in detecting is adjusted, lead to holistic detection data not complete enough, the holistic detection effect has been reduced, and not detecting under multiple environment can lead to whole use the appearance problem under different environment, the holistic shaping effect has been reduced, whole practicality has been reduced.
Disclosure of Invention
The invention aims to provide a gluing quality point-dividing type detection process for processing a solar silicon wafer, and aims to solve the problems that the gluing quality of the solar silicon wafer is inconvenient to detect in a point-dividing manner in the background technology, so that the condition of missed detection is easy to occur in the whole detection process, the whole detection effect is reduced, the temperature in the detection process is inconvenient to adjust in the whole detection process, the whole detection data is incomplete, the whole detection effect is reduced, the whole detection process is not carried out in various environments, the problem of the use of the whole under different environments is caused, the whole forming effect is reduced, and the whole practicability is reduced.
In order to achieve the purpose, the invention provides the following technical scheme: a glue coating quality point-division detection process for processing a solar silicon wafer comprises the following steps:
the method comprises the following steps: through carrying out the rubber coating to solar wafer to guarantee conveyor and carry out stable transport to the silicon chip, and cool off solar wafer through cooling device in the in-process of carrying, guarantee that the glue in the silicon chip outside keeps dry, guarantee that the glue that condenses can be by abundant detection, guarantee whole normal detection effect.
Step two: the method comprises the steps of carrying out point-by-point detection on the glued solar silicon wafers, moving the dried solar silicon wafers to a feeding position, sorting the solar silicon wafers through a feeding robot, ensuring that each solar silicon wafer is fully detected, simultaneously setting a comparison detection group, detecting the surfaces of the glued solar silicon wafers through a visual detection robot, detecting cracks generated in the whole processing process, pressurizing the surfaces of the whole bodies through a pressing device, detecting stress values after the whole bodies are integrally formed, detecting the strength of the whole bodies, recording data obtained by the whole body detection through a recording device, conveniently comparing the whole bodies with normal values, respectively carrying out point-by-point detection on four corners and middle positions in the detection process, calculating and recording the average value of the detection results, ensuring that the average value of the detection results of the silicon wafers is within the normal average value, and the numerical values of all points are ensured to be in the average value, so that the integral detection result is ensured.
Step three: the environment that detects wholly is regulated and control, adjusts through atmospheric pressure, temperature and humidity to the testing environment is inside to the convenient whole numerical value that detects out the colloid under different environment changes, and records the whole through recorder, conveniently reachs the situation of change of colloid under the different temperatures, and compares the numerical value that will change with the relative value, thereby conveniently detects out unqualified rubber coating silicon chip.
Step four: and sorting the detected silicon wafers, comparing the detection result of the silicon wafers with a standard value, taking the silicon wafers within the normal value as qualified products, and collecting and processing the unqualified products, thereby finishing the integral detection.
Preferably, the cooling device in the first step is a belt-type freeze dryer, the belt-type freeze dryer is a conveyor belt fixing clamp structure, and the temperature inside the belt-type freeze dryer is kept constant.
Preferably, the sorting robot in the second step is of a structure with claws, the claws of the sorting robot are matched with the shapes and sizes of the silicon wafers, and the sorting robot and the comparison detection group are correspondingly distributed with two groups.
Preferably, the whole comparison detection group in the second step is a box body with a sealing structure, the visual detection robots in the comparison detection group are distributed correspondingly to the comparison detection group, and the visual detection robot is a mobile structure with horizontal adjustment.
Preferably, the pressing device in the second step is a pressure cylinder with a pressure value display mechanism, and the pressing device continuously presses the colloid in the detection process, and the pressing is kept for 5N/min to 200N.
Preferably, the same variables are used for detecting the four corners and the middle position of the silicon wafer in the second step, at least two times of detection are required for performing point-based detection on the four corners and the middle position of the silicon wafer, and the average value of the detection results is an average value calculated for multiple times (calculated according to the detection times).
Preferably, the air pressure, the temperature and the humidity in the third step are respectively controlled by a humidifier, a refrigerator (a heating machine) and an air pressure regulator, the humidifier, the refrigerator (the heating machine) and the air pressure regulator are all fixed inside the comparison detection group, and corresponding anti-fog, anti-high temperature and anti-explosion structures are arranged inside the comparison detection group.
Preferably, the air pressure adjustment in the third step is increased or decreased at a speed of 0.02Pa/min, and the air pressure adjustment is different in value between two control detection groups, and the air pressure adjustment is normal air pressure inside one control detection group and is variable air pressure inside the other group.
Preferably, the temperature inside the third step is controlled by two temperatures per minute, the highest temperature is 80 ℃, the lowest temperature is-10 ℃, the values of the temperature regulation in the two control detection groups are different, the temperature regulation in one control detection group is normal temperature, and the temperature regulation in the other control detection group is variable temperature.
Preferably, the humidity control in step three is performed such that the entire body is continuously humidified until the humidity reaches 70% relative humidity, and the humidity control is performed at a normal temperature in one control test group and at a variable humidity in the other control test group, with the values of the humidity control in the two control test groups being different.
Compared with the prior art, the invention has the beneficial effects that: the gluing quality point-dividing detection process for processing the solar silicon wafer respectively carries out point-dividing detection on four corners and the middle position of the silicon wafer and calculates and records the average value of the detection result, thereby conveniently carrying out full multi-point detection on the whole body and ensuring the good detection result of the whole body, simultaneously respectively detecting the forming condition of the surface of the whole body and the stability and the strength after the whole body is formed by a vision detection robot and a pressing device, conveniently obtaining the best glued silicon wafer integrally, respectively adjusting the variable in the whole detection process by a humidifier, a refrigerator (a heating machine) and an air pressure regulator, conveniently detecting the service condition and the service life of the glue formed integrally under different environments, conveniently detecting the whole body, and arranging two groups of comparison experiment groups to conveniently detect the preservation condition of the glue under normal environment and different environments integrally, convenient whole in-service use that carries out, and carry out the record to the data of whole style of appearance gained, conveniently contrast and calculate to can finely tune the rubber coating flow through unqualified data after guaranteeing, guarantee whole good shaping effect, this technology is through the stability and the intensity that detect colloid under the different environment, and carry out multiple spot sample and contrast and detect, guarantee whole good detection effect, thereby increased whole practicality.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The invention provides a technical scheme that: a glue coating quality point-division detection process for processing a solar silicon wafer comprises the following steps:
the method comprises the following steps: through carrying out the rubber coating to solar wafer to guarantee conveyor and carry out stable transport to the silicon chip, and cool off solar wafer through cooling device in the in-process of carrying, guarantee that the glue in the silicon chip outside keeps dry, guarantee that the glue that condenses can be by abundant detection, guarantee whole normal detection effect.
Step two: the method comprises the steps of carrying out point-by-point detection on the glued solar silicon wafers, moving the dried solar silicon wafers to a feeding position, sorting the solar silicon wafers through a feeding robot, ensuring that each solar silicon wafer is fully detected, simultaneously setting a comparison detection group, detecting the surfaces of the glued solar silicon wafers through a visual detection robot, detecting cracks generated in the whole processing process, pressurizing the surfaces of the whole bodies through a pressing device, detecting stress values after the whole bodies are integrally formed, detecting the strength of the whole bodies, recording data obtained by the whole body detection through a recording device, conveniently comparing the whole bodies with normal values, respectively carrying out point-by-point detection on four corners and middle positions in the detection process, calculating and recording the average value of the detection results, ensuring that the average value of the detection results of the silicon wafers is within the normal average value, and the numerical values of all points are ensured to be in the average value, so that the integral detection result is ensured.
Step three: the environment that detects wholly is regulated and control, adjusts through atmospheric pressure, temperature and humidity to the testing environment is inside to the convenient whole numerical value that detects out the colloid under different environment changes, and records the whole through recorder, conveniently reachs the situation of change of colloid under the different temperatures, and compares the numerical value that will change with the relative value, thereby conveniently detects out unqualified rubber coating silicon chip.
Step four: and sorting the detected silicon wafers, comparing the detection result of the silicon wafers with a standard value, taking the silicon wafers within the normal value as qualified products, and collecting and processing the unqualified products, thereby finishing the integral detection.
Further, the cooling device in the first step adopts a belt type freeze dryer, the freeze belt type freeze dryer is of a conveying belt fixing clamp structure, the temperature inside the belt type freeze dryer keeps constant, the whole drying gluing silicon wafer can be conveniently and completely detected, and the whole good forming effect is guaranteed.
Furthermore, the sorting robot in the step two is of a structure with a clamping jaw, the clamping jaw of the sorting robot is matched with the silicon wafer in shape and size, the sorting robot and the comparison detection group are correspondingly distributed with two groups, the sorting robot with the clamping jaw structure is convenient to clamp and feed the silicon wafer, and overall detection is convenient.
Furthermore, the whole box that is taken seal structure of contrast detection group in the step two, and contrast detection group's inside visual inspection robot corresponds the distribution with contrast detection group to visual inspection robot is for taking the portable structure of level (l) ing, conveniently wholly drives visual inspection robot and carries out abundant detection to the surface of colloid, has increased holistic detection effect.
Further, the pressing device in the step two is a pressure cylinder with a pressure numerical value display mechanism, the colloid is continuously pressed in the detection process of the pressing device, the colloid is pressed for 5N/min till 200N, the forming state of the colloid is detected, meanwhile, the silicon wafer is prevented from being integrally pressed, and therefore the whole body can be conveniently and integrally subjected to sufficient detection.
Furthermore, the same variables are adopted for detecting the four corners and the middle position of the silicon wafer in the second step, at least two times of detection are needed for point-based detection of the four corners and the middle position of the silicon wafer, and the average value of the detection results is an average value calculated for multiple times (calculated according to the detection times), so that the average value of multiple-point multiple-sampling is ensured, the integral optimal value is conveniently calculated integrally, and more accurate data is conveniently obtained integrally.
Further, atmospheric pressure, temperature and humidity all control through humidifier, refrigerator (heating machine) and air pressure regulator respectively in step three, and humidifier, refrigerator (heating machine) and air pressure regulator all fix inside the contrast detection group to contrast detection group is inside all to be provided with corresponding antifog, high temperature resistant and explosion-proof structure, conveniently adjust holistic variable through humidifier, refrigerator (heating machine) and air pressure regulator, guarantees whole good variable control effect.
Furthermore, the air pressure in the third step is adjusted to be increased or decreased at the speed of 0.02Pa/min, the values of the air pressure adjustment in the two groups of comparison detection groups are different, the normal air pressure is adjusted in one group of comparison detection group, the variable air pressure is adjusted in the other group, and the change of the internal data of the colloid under different air pressures is conveniently detected integrally.
Further, the temperature of step three inside is regulated and control through the temperature of two degrees per minute, and the highest temperature is 80 degrees, and the minimum temperature is-10 degrees, and temperature regulation is different at two sets of contrast detection group's numerical value to temperature regulation is normal temperature at a set of contrast detection group inside, is the change temperature at another internal portion of group, makes things convenient for the change of whole detection colloid internal data under different temperatures.
Further, the humidity regulation inside the step three is that the humidity regulation is continuously carried out to the whole body until the humidity becomes 70% of relative humidity, and the humidity regulation is different at the numerical value of two groups of contrast detection groups, and the humidity regulation is normal temperature inside one group of contrast detection groups, and is changed humidity inside the other group, so that the whole body detection is convenient to change the data inside the colloid under different humidities.
The invention firstly glues the solar silicon wafer, ensures the stable conveying of the silicon wafer by a conveying device, cools the solar silicon wafer by a freezing belt type dryer with a fixed clamp structure on a conveying belt in the conveying process, ensures the glue on the outer side of the silicon wafer to be dry, ensures the condensed glue to be fully detected, ensures the overall normal detection effect, then carries out point-by-point detection on the glued solar silicon wafer, moves the dried solar silicon wafer to a feeding position, sorts the solar silicon wafer by a feeding robot, ensures each solar silicon wafer to be fully detected, simultaneously sets a contrast detection group which is a box body with a sealing structure integrally, detects the surface of the glued solar silicon wafer by a visual detection robot, and detects cracks generated in the overall processing process, the vision detection robot is a mobile structure with horizontal adjustment, the vision detection robot is conveniently and integrally driven to fully detect the surface of the colloid, the integral detection effect is improved, the surface of the whole body is pressurized through a pressure cylinder with a pressure numerical value display mechanism, the colloid is pressurized and kept for 5N/min to 200N, the molding state of the colloid is detected, the stress numerical value after the integral molding is detected, the integral strength is detected, the data obtained by the integral detection is recorded through a recording device, the integral is convenient to compare with normal numerical values, the four corners and the middle positions of the silicon wafer are respectively detected in a point division mode in the detection process, the average value of the detection result is calculated and recorded, the average value of the detection result is the average value obtained by measuring and calculating (according to the detection times), the average value of multiple-point sampling and averaging are ensured, ensuring that the average value of the silicon wafer detection results is within the normal average value and ensuring that the numerical values of all points are within the average value, thereby ensuring the integral detection results, then regulating and controlling the environment of the integral detection, ensuring that the internal regulation of two groups of detection devices is different, one is kept at the normal level and the other is regulated, regulating the air pressure, the temperature and the humidity inside the detection environment through a humidifier, a refrigerator (a heating machine) and an air pressure regulator, thereby facilitating the integral detection of the numerical value change of colloid under different environments (the air pressure regulation is increased or decreased at the speed of 0.02Pa/min, the temperature is regulated and controlled through the temperature of two degrees per minute, the highest temperature is 80 ℃, the lowest temperature is 10 ℃ below zero, the humidity regulation is that the internal part of the integral body is continuously humidified until the humidity is changed into 70 percent relative humidity), and recording the integral detection results through a recording, the change condition of the colloid under different temperatures is conveniently obtained, the changed numerical value is compared with the relative value, so that unqualified glued silicon wafers are conveniently detected, the detected silicon wafers are sorted at last, the detection result of the silicon wafers is compared with the standard numerical value, the silicon wafers within the normal numerical value are qualified products, the unqualified products are collected and processed, and the whole detection is completed.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (10)
1. A glue coating quality point-division detection process for processing a solar silicon wafer is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: through carrying out the rubber coating to solar wafer to guarantee conveyor and carry out stable transport to the silicon chip, and cool off solar wafer through cooling device in the in-process of carrying, guarantee that the glue in the silicon chip outside keeps dry, guarantee that the glue that condenses can be by abundant detection, guarantee whole normal detection effect.
Step two: the method comprises the steps of carrying out point-by-point detection on the glued solar silicon wafers, moving the dried solar silicon wafers to a feeding position, sorting the solar silicon wafers through a feeding robot, ensuring that each solar silicon wafer is fully detected, simultaneously setting a comparison detection group, detecting the surfaces of the glued solar silicon wafers through a visual detection robot, detecting cracks generated in the whole processing process, pressurizing the surfaces of the whole bodies through a pressing device, detecting stress values after the whole bodies are integrally formed, detecting the strength of the whole bodies, recording data obtained by the whole body detection through a recording device, conveniently comparing the whole bodies with normal values, respectively carrying out point-by-point detection on four corners and middle positions in the detection process, calculating and recording the average value of the detection results, ensuring that the average value of the detection results of the silicon wafers is within the normal average value, and the numerical values of all points are ensured to be in the average value, so that the integral detection result is ensured.
Step three: the environment that detects wholly is regulated and control, adjusts through atmospheric pressure, temperature and humidity to the testing environment is inside to the convenient whole numerical value that detects out the colloid under different environment changes, and records the whole through recorder, conveniently reachs the situation of change of colloid under the different temperatures, and compares the numerical value that will change with the relative value, thereby conveniently detects out unqualified rubber coating silicon chip.
Step four: and sorting the detected silicon wafers, comparing the detection result of the silicon wafers with a standard value, taking the silicon wafers within the normal value as qualified products, and collecting and processing the unqualified products, thereby finishing the integral detection.
2. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and the cooling device in the first step adopts a belt type freeze dryer which is of a structure with a fixed clamp on a conveying belt, and the temperature in the belt type freeze dryer is kept constant.
3. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and the sorting robot in the second step is of a structure with claws, the claws of the sorting robot are matched with the shapes and sizes of the silicon wafers, and the sorting robot and the comparison detection groups are correspondingly distributed in two groups.
4. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and the contrast detection group in the second step is integrally a box body with a sealing structure, the visual detection robots in the contrast detection group are correspondingly distributed with the contrast detection group, and the visual detection robots are of a mobile structure with horizontal adjustment.
5. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and the pressing device in the second step is a pressure cylinder with a pressure numerical value display mechanism, and the colloid is continuously pressed in the detection process of the pressing device, and the pressing is kept for 5N/min till 200N.
6. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: in the second step, the same variables are adopted for detecting the four corners and the middle position of the silicon wafer, at least two times of detection are needed for performing point-based detection on the four corners and the middle position of the silicon wafer, and the average value of the detection results is an average value calculated for multiple times (calculated according to the detection times).
7. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and in the third step, the air pressure, the temperature and the humidity are respectively controlled by a humidifier, a refrigerator (a heating machine) and an air pressure regulator, the humidifier, the refrigerator (the heating machine) and the air pressure regulator are all fixed inside the comparison detection group, and corresponding anti-fog, anti-high temperature and anti-explosion structures are arranged inside the comparison detection group.
8. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and the air pressure in the third step is adjusted to rise or fall at the speed of 0.02Pa/min, the values of the air pressure in the two groups of comparison detection groups are different, the air pressure is adjusted to be normal air pressure in one group of comparison detection group, and the air pressure in the other group is changed.
9. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and regulating the temperature in the third step by using two temperatures per minute, wherein the highest temperature is 80 ℃, the lowest temperature is minus 10 ℃, the values of the temperature regulation in two groups of contrast detection groups are different, the temperature regulation in one group of contrast detection groups is normal temperature, and the temperature regulation in the other group is variable temperature.
10. The glue quality point-division detection process for processing the solar silicon wafer as claimed in claim 1, wherein the glue quality point-division detection process comprises the following steps: and step three, when the humidity in the whole body is continuously humidified until the humidity is 70% of the relative humidity, the values of the humidity in the two groups of control detection groups are different, the temperature in one group of control detection groups is normal, and the humidity in the other group of control detection groups is changed.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| CN115254666A (en) * | 2022-07-21 | 2022-11-01 | 安徽瑞联节能科技股份有限公司 | Online detection system is used in rock wool board production |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| CN114670352B (en) * | 2022-05-26 | 2022-08-12 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| CN115254666A (en) * | 2022-07-21 | 2022-11-01 | 安徽瑞联节能科技股份有限公司 | Online detection system is used in rock wool board production |
| CN115254666B (en) * | 2022-07-21 | 2024-07-16 | 安徽瑞联节能科技股份有限公司 | Rock wool board production is with online detecting system |
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