CN102390094A - Solar-grade silicon wafer being cut by diamond wire and cutting method thereof - Google Patents
Solar-grade silicon wafer being cut by diamond wire and cutting method thereof Download PDFInfo
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- CN102390094A CN102390094A CN2011102575461A CN201110257546A CN102390094A CN 102390094 A CN102390094 A CN 102390094A CN 2011102575461 A CN2011102575461 A CN 2011102575461A CN 201110257546 A CN201110257546 A CN 201110257546A CN 102390094 A CN102390094 A CN 102390094A
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Abstract
The invention discloses a solar-grade silicon wafer being cut by a diamond wire and a cutting method thereof. A mono-crystalline silicon square rod is cut by a diamond wire. The cutting method comprises the following steps that: the mono-crystalline silicon square rod which is formed by squaring, grinding and sharpening a mono-crystalline silicon circular rod, the mono-crystalline silicon square rod is fixed on a resin strip through an adhesive bar, the resin strip is fixed on an adhesive plate, then the adhesive plate and the mono-crystalline silicon square rod are collectively placed into a working cabin to be preheated, cutting liquid is circulated in the working cabin to work, then the diamond cutting is performed, the cut mono-crystalline silicon wafer is inversely arranged on a degumming device to degum, and the mono-crystalline silicon wafer is washed by ultrasonic and then is centrifugally dehydrated. Due to the adoption of the cutting method, the photoelectric conversion efficiency and the cutting efficiency of the mono-crystalline silicon wafer can be improved, a silicon wafer with the thickness of 140 to 200 micrometers can be produced, the qualification rate of the product can reach more than 98 percent; and silicon powder is recyclable, so valuable silicon resource can be saved, and the environment-friendly production can be really realized during the production process.
Description
Technical field
The present invention relates to a kind of solar level list silicon wafer and cutting process method thereof that uses the diamond wire cutting.
Background technology
Solar monocrystalline silicon slice is used for solar cell, and silicon single crystal rod is processed into silicon chip through wire cutting machine.At present; Generally adopt the multi-line cutting machine of NTC, MB and HTC to carry out cutting processing on the market; The cutting condition: line cutting steel wire diameter 150um, the slot pitch of offering on the home roll is 340um, the solar monocrystalline silicon slice thickness that such processing conditions processes is in the scope of 200 ± 20mm; Monolithic consumption line amount 1.06m, silica flour waste 40%.
At present, the expensive major obstacle that remains restriction photovoltaic generation large-scale application at the silicon chip production link, requires enterprise to enhance productivity, reduce processing loss, silicon chip sheet, improves electricity conversion, reduces the influence to environment simultaneously again.Some application in silicon chip production, have been obtained like the diamond wire cutting technique; It is mainly used in the evolution of silicon single crystal rod; But with the technology that diamond wire cuts silicon chip, still be in research and development and small serial production stage at present, traditional cutting technique is still adopted in the silicon wafer cutting.The tradition cutting technique adopts carborundum joined and forms the free type mortar in the cutting liquid and carry out the line cutting; In cutting process, because carborundum is in free state in cutting liquid, self is also in motion when moving with line of cut; Thereby on the silicon chip face of cutting, can produce the cut channel of cloud diindyl formula; Make silicon chip surface have a large amount of loss layers, reduced the electricity conversion of monocrystalline silicon piece, also performance has following not enough problem simultaneously:
1, adopt the cutting of free type mortar, cutting cost is high; Cutting back mortar is difficult to reclaim, and is big to ambient influnence;
2, in cutting process, will cause the waste of 40% silica flour, and use traditional handicraft can't carry out silica flour and reclaim;
3, cutting efficiency is low, and single cut needs 7-8 hour, and cutting efficiency is lower.
Summary of the invention
The objective of the invention is to, the problems referred to above to existing multi-line cutting machine processing solar monocrystalline silicon slice technology exists adopt the diamond wire cutting technique; Under the prerequisite that guarantees cutting effect; Reduce cutting cost, promote cutting efficiency, reduce influence degree environment.
The present invention realizes through such technical scheme; It is the square of fillet or chamfering that said silicon wafer is four jiaos, has the straight line stria of rule on the said silicon wafer surface, and the process of said use diamond wire cutting solar level list silicon wafer is: earlier the monocrystalline silicon pole is glued rod through the monocrystalline silicon square rod that forms after evolution, grinding and the attrition process; Through sticking rod the monocrystalline silicon square rod is fixed on the resin streak; Resin streak is fixed on the sizing plate, again the sizing plate is put into work chamber together with the monocrystalline silicon square rod, cutting liquid preheating and in the work chamber periodic duty; Then use diamond wire to cut into monocrystalline silicon piece; Monocrystalline silicon piece is inverted on the degumming equipment comes unstuck, clean with ultrasonic wave again, dry again to make and form.
The special-purpose cutting of said diamond wire liquid is stirred through the stirring at low speed cylinder by the antifoaming agent of the emulsifying agent of the antirust agent of 19～59% polyethylene glycol, 40.5～80.5% pure water, 0.05～0.2%wt, 0.05～0.2%wt and 0.3～0.5%wt and mixed in 2 hours.
The method of the invention concrete steps are:
(1) sticking rod: silicon single crystal rod is before bonding; The silicon single crystal rod surface is handled; Use absolute ethyl alcohol wiping silicon single crystal rod gluing of surfaces, bonding agent uses American AB glue, connects material and uses resin streak; In the process of adhesive curing, use the 5-10kg compression weight that silicon single crystal rod is pressurizeed, discharge unnecessary glue and make its curing; Be 0.5-3 hour pressing time, through sticking rod the monocrystalline silicon square rod is fixed on the resin streak, and resin streak is fixed on the sizing plate, solidifies after 6 hours, again the sizing plate is put into the work chamber incised together with the monocrystalline silicon square rod,
(2) cutting preheating: with the heating that in the cutting work chamber, circulates of the special-purpose cutting of diamond wire liquid, and the speed of use 300-500m/min carries out diamond wire and back and forth trys out, makes cutting environment reach stability state before the cutting, and be 2 hours heat time heating time;
(3) cutting: cutting technique is set, and uses diameter 138-150um diamond wire, under the pre-tension effect of 22-25N, and diamond wire speed 1000-1400 m/min, the workbench decrease speed is at 0.6-1.5mm/min;
(4) blanking: after the silicon single crystal rod cutting finishes, close the diamond wire cutting fluid and supply with, open the cutting hatch door; Full-automatic lifting workbench at a slow speed; Silicon chip fully and after the disengaging of diamond line, with pick up speed lifting workbench, workbench resets to initial point; Use special-purpose truck down to take off whole blanking process safety, controlled crystal bar;
(5) remove photoresist: monocrystalline silicon piece is hung by the feet on degumming equipment, carry out coming unstuck in 15-20 minute;
(6) clean: use ultrasonic cleaning, monocrystalline silicon piece is thrown up and down in rinse bath and is moved in the cleaning process, carries out the cleaning of monocrystalline silicon sheet surface, then puts into drier and dries.
The silicon chip leading indicator that is cut into by the diamond wire cutting technique is following:
(1) silicon wafer thickness and permissible variation:
Table 1 silicon wafer thickness, thickness deviation and geometric parameter
Unit: um
(2) diameter and permissible variation:
The accurate square diamond wire cutting of table 2 silicon for solar cell single-chip size
Unit: mm
(3) silicon chip surface quality:
The accurate square diamond wire cutting of table 3 silicon for solar cell single-chip surface quality
(4) unit for electrical property parameters of silicon chip, crystal orientation index such as depart from reference to relevant national standard.
The present invention adopts the diamond wire cutting machine to carry out the monocrystalline silicon piece cutting, has following positive effect:
1, because diamond particles continues to stick to the diamond wire surface; The diamond wire silicon single crystal rod surface that rubs fast; Utilize the rigid characteristic and the sharp water caltrop of diamond particles that silicon rod is progressively cut; There are a large amount of regular strias in the monocrystalline silicon sheet surface of cutting, has increased the extinction area, has improved the electricity conversion of monocrystalline silicon piece;
2, the diamond wire cutting speed is fast, is 2.5 times of traditional cutting equipment;
3, can produce the silicon chip that thickness is 140-200um, product percent of pass reaches more than 98%;
4, the silica flour of cutting generation can be recycled, and has practiced thrift valuable silicon resource.
5, changed the problem of traditional free mortar cutting high pollution, highly energy-consuming, production process really realizes green production.
The specific embodiment
Understand the present invention for clearer, describe the present invention in detail in conjunction with embodiment:
Used diamond steel wire is diameter 150um, and used sheave slot pitch is 345um, diamond wire cutting machine model Takatori MWS4450D; Raw material is 125 * 125mm solar energy single crystal square rod, below for using the diamond wire cutting machine to carry out the production method and the concrete technology of monocrystalline silicon piece cutting:
(1) sticking rod: silicon single crystal rod is before bonding; The silicon single crystal rod surface is handled; Use absolute ethyl alcohol wiping silicon single crystal rod gluing of surfaces, bonding agent uses American AB glue, connects material and uses resin streak; In the process of adhesive curing, use the 5-10kg compression weight that silicon single crystal rod is pressurizeed, discharge unnecessary glue; Be 0.5-3 hour pressing time, and silicon single crystal rod is fixed on the resin streak, through sticking rod the monocrystalline silicon square rod is fixed on the resin streak, and resin streak is fixed on the sizing plate, and bonding processing is put into the work chamber incised with the sizing plate together with the monocrystalline silicon square rod after 6 hours again,
(2) cutting preheating, in the cutting work chamber, to circulate and be heated to temperature be the 25-40 degree to the special-purpose cutting of diamond wire liquid before the cutting, and use the speed of 350m/min to carry out steel wire and back and forth try out, makes cutting environment reach stability state.Be 2 hours preheating time.
(3) cutting: cutting technique is set, and uses diameter 150um diamond wire, under the pre-tension effect of 25N, and linear velocity 1000-1400m/min, the workbench decrease speed is at 0.6-1.5mm/min,
(5) blanking: after silicon single crystal rod cutting finishes, close cutting fluid and supply with, open the cutting hatch door, confirm whether silicon single crystal rod cuts fully, starts lifting button at a slow speed, whether the affirmation diamond wire clamp.Monocrystalline silicon piece fully and after the diamond wire disengaging, by the rapid uplift button, workbench resets to initial point, and using monocrystalline silicon piece down, truck takes off;
(6) remove photoresist: monocrystalline silicon piece is hung by the feet on degumming equipment, carry out coming unstuck in 15-20 minute;
(7) clean: the method for using ultrasonic cleaning; Each station ultrasonic cleaning time is 5 minutes; Silicon chip is thrown movingly in rinse bath up and down in the cleaning process, carries out the cleaning of monocrystalline silicon sheet surface, and the drier of then putting into temperature and be 100-140 ℃ dries 5-10 minute.
The silicon chip leading indicator that is cut into by the diamond wire cutting technique is following:
(1) silicon wafer thickness and permissible variation
Table 4 silicon wafer thickness, thickness deviation and geometric parameter
Unit: um
(2) monocrystalline silicon sheet surface quality:
The accurate square diamond wire cutting of table 5 silicon for solar cell single-chip surface quality
Claims (2)
1. a solar level silicon wafer and cutting method thereof of using diamond wire cutting, it is the square of fillet or chamfering that said silicon wafer is four jiaos, has the stria of straight line on the said silicon wafer surface; It adopts diamond wire that single silicon wafer square rod is cut; It is characterized in that: said cutting method is: single silicon wafer pole glues rod through the monocrystalline silicon square rod that forms after evolution, grinding and the attrition process, through sticking rod the monocrystalline silicon square rod is fixed on the resin streak, and resin streak is fixed on the sizing plate; Again the sizing plate is put into work chamber together with the monocrystalline silicon square rod; Preheating also makes cutting liquid in the work chamber periodic duty, then carries out diamond cut, the monocrystalline silicon piece that cuts is inverted on the degumming equipment comes unstuck; Clean with ultrasonic wave again, dry manufacturing again and form.
2. a kind of solar level silicon wafer and cutting method thereof of using the diamond wire cutting according to claim 1, it is characterized in that: said cutting method concrete steps are:
(1) sticking rod: silicon single crystal rod is before bonding; The silicon single crystal rod surface is handled; Use absolute ethyl alcohol wiping silicon single crystal rod gluing of surfaces, bonding agent uses American AB glue, connects material and uses resin streak; In the process of adhesive curing, use the 5-10kg compression weight that silicon single crystal rod is pressurizeed, discharge unnecessary glue and make its curing; Be 0.5-3 hour pressing time, through sticking rod the monocrystalline silicon square rod is fixed on the resin streak, and resin streak is fixed on the sizing plate, solidifies after 6 hours, again the sizing plate is put into the work chamber incised together with the monocrystalline silicon square rod,
(2) cutting preheating, with the heating that in the cutting work chamber, circulates of the special-purpose cutting of diamond wire liquid, and the speed of use 300-500m/min carries out diamond wire and back and forth trys out, makes cutting environment reach stability state before the cutting, and be 2 hours heat time heating time,
(3) cutting: cutting technique is set, and uses diameter 138-150um diamond wire, under the pre-tension effect of 22-25N, and diamond wire speed 1000-1400m/min, the workbench decrease speed is at 0.6-1.5mm/min,
(4) blanking: after the silicon single crystal rod cutting finishes, close the diamond wire cutting fluid, monocrystalline silicon piece is taken off,
(5) remove photoresist: the monocrystalline silicon piece after the cutting-out is hung by the feet on degumming equipment, came unstuck in 15-20 minute to finish,
(6) clean: use ultrasonic cleaning, monocrystalline silicon piece is thrown up and down in rinse bath and is moved in the cleaning process, carries out the cleaning of monocrystalline silicon sheet surface, then puts into drier and dries.
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Cited By (22)
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|---|---|---|---|---|
| CN103331828A (en) * | 2013-05-31 | 2013-10-02 | 阳光硅谷电子科技有限公司 | Cutting technique of oversized-diameter silicon rod |
| CN103934909A (en) * | 2014-03-19 | 2014-07-23 | 阳光硅谷电子科技有限公司 | Process adopting extra-fine steel wire to cut silicon rod |
| CN103991140A (en) * | 2014-04-28 | 2014-08-20 | 阳光硅谷电子科技有限公司 | Diamond wire-electrode cutting technology for silicon rod |
| CN104191533A (en) * | 2014-09-04 | 2014-12-10 | 无锡尚品太阳能电力科技有限公司 | Silicon wafer reciprocating cutting technology |
| CN104441283A (en) * | 2014-10-30 | 2015-03-25 | 内蒙古中环光伏材料有限公司 | Method for wire-electrode cutting on silicon wafer using electroplated diamond with diameter Phi of 80 micrometers |
| CN104441282A (en) * | 2014-10-31 | 2015-03-25 | 内蒙古中环光伏材料有限公司 | Method for cutting silicon wafer through low-particle electroplating gold wire |
| CN105058605A (en) * | 2015-08-02 | 2015-11-18 | 河南鸿昌电子有限公司 | Wire cutting machine and wire cutting method of semiconductor crystal bar |
| CN106938503A (en) * | 2017-03-17 | 2017-07-11 | 浙江好亚能源股份有限公司 | Crystal bar dicing method |
| CN107030907A (en) * | 2017-03-17 | 2017-08-11 | 浙江好亚能源股份有限公司 | The processing method of polysilicon chip |
| CN107053503A (en) * | 2016-11-21 | 2017-08-18 | 宁晋松宫电子材料有限公司 | A kind of silicon section residual plate method |
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
| CN107214869A (en) * | 2017-07-20 | 2017-09-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN107881560A (en) * | 2017-11-24 | 2018-04-06 | 苏州阿特斯阳光电力科技有限公司 | A kind of preprocess method of crystalline silicon rod |
| CN108262647A (en) * | 2018-01-23 | 2018-07-10 | 滁州英诺信电器有限公司 | A kind of cutting method of photoelectric material |
| CN109435079A (en) * | 2018-09-17 | 2019-03-08 | 无锡斯贝尔磁性材料有限公司 | A kind of diamond wire saw method |
| CN109664425A (en) * | 2019-02-01 | 2019-04-23 | 江苏吉星新材料有限公司 | A kind of lower machine method after sapphire substrate sheet slice |
| CN110385606A (en) * | 2019-08-01 | 2019-10-29 | 西安奕斯伟硅片技术有限公司 | A kind of processing method and dicing method of silicon crystal bar |
| CN111497045A (en) * | 2020-04-24 | 2020-08-07 | 江苏晶科天晟能源有限公司 | Optimized production process of solar monocrystalline silicon wafer |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112792870A (en) * | 2020-12-21 | 2021-05-14 | 易智强 | Drainage stick cutting equipment for experiments |
| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| TWI786740B (en) * | 2020-07-27 | 2022-12-11 | 環球晶圓股份有限公司 | Crystal ingot cutting device and crystal ingot cutting method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103331828A (en) * | 2013-05-31 | 2013-10-02 | 阳光硅谷电子科技有限公司 | Cutting technique of oversized-diameter silicon rod |
| CN103934909A (en) * | 2014-03-19 | 2014-07-23 | 阳光硅谷电子科技有限公司 | Process adopting extra-fine steel wire to cut silicon rod |
| CN103991140A (en) * | 2014-04-28 | 2014-08-20 | 阳光硅谷电子科技有限公司 | Diamond wire-electrode cutting technology for silicon rod |
| CN104191533A (en) * | 2014-09-04 | 2014-12-10 | 无锡尚品太阳能电力科技有限公司 | Silicon wafer reciprocating cutting technology |
| CN104441283A (en) * | 2014-10-30 | 2015-03-25 | 内蒙古中环光伏材料有限公司 | Method for wire-electrode cutting on silicon wafer using electroplated diamond with diameter Phi of 80 micrometers |
| CN104441282B (en) * | 2014-10-31 | 2017-02-01 | 内蒙古中环光伏材料有限公司 | Method for cutting silicon wafer through low-particle electroplating gold wire |
| CN104441282A (en) * | 2014-10-31 | 2015-03-25 | 内蒙古中环光伏材料有限公司 | Method for cutting silicon wafer through low-particle electroplating gold wire |
| CN105058605A (en) * | 2015-08-02 | 2015-11-18 | 河南鸿昌电子有限公司 | Wire cutting machine and wire cutting method of semiconductor crystal bar |
| CN107053503A (en) * | 2016-11-21 | 2017-08-18 | 宁晋松宫电子材料有限公司 | A kind of silicon section residual plate method |
| CN107053503B (en) * | 2016-11-21 | 2019-03-15 | 宁晋松宫电子材料有限公司 | A kind of silicon slice residual plate method |
| CN106938503A (en) * | 2017-03-17 | 2017-07-11 | 浙江好亚能源股份有限公司 | Crystal bar dicing method |
| CN107030907A (en) * | 2017-03-17 | 2017-08-11 | 浙江好亚能源股份有限公司 | The processing method of polysilicon chip |
| CN107116711A (en) * | 2017-05-15 | 2017-09-01 | 南通综艺新材料有限公司 | One kind carries out silicon ingot cutting technique using new steel wire and solvent |
| CN107214869A (en) * | 2017-07-20 | 2017-09-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN107214869B (en) * | 2017-07-20 | 2019-11-29 | 阜宁协鑫光伏科技有限公司 | Method for cutting silicon chips |
| CN107881560A (en) * | 2017-11-24 | 2018-04-06 | 苏州阿特斯阳光电力科技有限公司 | A kind of preprocess method of crystalline silicon rod |
| CN108262647A (en) * | 2018-01-23 | 2018-07-10 | 滁州英诺信电器有限公司 | A kind of cutting method of photoelectric material |
| CN109435079A (en) * | 2018-09-17 | 2019-03-08 | 无锡斯贝尔磁性材料有限公司 | A kind of diamond wire saw method |
| CN109664425A (en) * | 2019-02-01 | 2019-04-23 | 江苏吉星新材料有限公司 | A kind of lower machine method after sapphire substrate sheet slice |
| CN110385606A (en) * | 2019-08-01 | 2019-10-29 | 西安奕斯伟硅片技术有限公司 | A kind of processing method and dicing method of silicon crystal bar |
| CN111497045A (en) * | 2020-04-24 | 2020-08-07 | 江苏晶科天晟能源有限公司 | Optimized production process of solar monocrystalline silicon wafer |
| TWI786740B (en) * | 2020-07-27 | 2022-12-11 | 環球晶圓股份有限公司 | Crystal ingot cutting device and crystal ingot cutting method |
| CN112078038A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112078038B (en) * | 2020-07-30 | 2022-07-22 | 乐山高测新能源科技有限公司 | Cutting method of silicon wafer with thickness of below 140 microns |
| CN112792870A (en) * | 2020-12-21 | 2021-05-14 | 易智强 | Drainage stick cutting equipment for experiments |
| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| CN114670352B (en) * | 2022-05-26 | 2022-08-12 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
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Application publication date: 20120328 |