CN105058605A - Wire cutting machine and wire cutting method of semiconductor crystal bar - Google Patents
Wire cutting machine and wire cutting method of semiconductor crystal bar Download PDFInfo
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- CN105058605A CN105058605A CN201510463152.XA CN201510463152A CN105058605A CN 105058605 A CN105058605 A CN 105058605A CN 201510463152 A CN201510463152 A CN 201510463152A CN 105058605 A CN105058605 A CN 105058605A
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Abstract
The invention relates to the technical field of grain manufacturing of refrigeration parts, and in particular to a wire cutting machine and a wire cutting method of a semiconductor crystal bar. The wire cutting machine comprises a wire cutting machine body, the wire cutting machine body is provided with a rack, and a clamp is arranged on the rack. A cutting wire passes through a station, a small chamber arranged on the rack is arranged around the station, heating devices are arranged around the small chamber, and the beneficial effect of being capable of meeting several special production needs better is achieved. The wire cutting method of the semiconductor crystal bar is achieved by carrying out wire cutting on the crystal bar on the wire cutting machine. The wire cutting machine comprises the wire cutting machine body, the wire cutting machine body is provided with the rack, and the clamp is arranged on the rack. The station is arranged in front of the clamp, the small chamber arranged on the rack is arranged around the station, and the heating devices are arranged around the small chamber. When the crystal bar is cut, the temperature of the crystal bar and the small chamber ranges from 80 DEG C to 90 DEG C, and the beneficial effects of being lower in cost of produced grains, higher in percent of pass and better in product quality are achieved.
Description
Technical field
The present invention relates to the crystal grain manufacturing technology field of cooling component, particularly relate to a kind of wire cutting machine, also relate to the wire cutting method of semiconductor crystal bar.
Background technology
Semiconductor refrigeration member comprises porcelain plate and semiconductor grain, and semiconductor grain is welded on porcelain plate, and crystal grain is the structure of cuboid, and it is that semiconductor crystal bar cutting on line machine forms through Linear cut.
In prior art, wire cutting machine does not have heater, and the parts for processing at room temperature carry out, and can not meet the needs that some are produced.
In addition, in prior art, crystal bar cutting on line machine cuts, generally carries out at normal temperatures, the crystal grain that such cutting mode is produced has that yield rate is lower, the shortcoming of inferior quality, adds production cost, have impact on semiconductor refrigeration member productivity ratio and product quality.
Summary of the invention
Object of the present invention is exactly for above-mentioned shortcoming, provides a kind of wire cutting machine meeting some need of productions, also provides a kind of wire cutting method reducing production cost, improve product qualified rate, the better semiconductor crystal bar of cut quality.
Wire cutting machine technical scheme of the present invention is achieved in that a kind of wire cutting machine, comprise wire cutting machine body, wire cutting machine body has frame, frame is provided with jig, it is station before jig, also have line of cut through station, it is characterized in that: be provided with rack-mounted cell around described station, around cell, have heater.
Say further, described cell is also provided with spray equipment.
Say further, described cell is also provided with protective gas conveying device.
The technical scheme of the wire cutting method of semiconductor crystal bar of the present invention is achieved in that a kind of wire cutting method of semiconductor crystal bar, it is cut by the enterprising line of crystal bar cutting on line machine and forms, described wire cutting machine comprises wire cutting machine body, wire cutting machine body has frame, frame is provided with jig, it is station before jig, also has line of cut through station, it is characterized in that: around described station, be provided with rack-mounted cell, have heater around cell, during cutting crystal bar, the temperature of crystal bar and cell is 80-90 DEG C.
Preferably, described temperature is 85 DEG C.
Preferably, on crystal bar, glycerine or kerosene is coated with when cutting crystal bar.
Preferably, carbon dioxide is had when cutting crystal bar around crystal bar.
The invention has the beneficial effects as follows:
Such wire cutting machine can meet the needs of some need of productions, and described cell is also provided with spray equipment, and described cell is also provided with protective gas conveying device, has the advantage that more can meet some production special requirements;
The wire cutting method of such semiconductor crystal bar has that the crystal grain cost produced is lower, qualification rate is higher, the better advantage of product quality; Described temperature is 85 DEG C, is coated with glycerine or kerosene when cutting crystal bar on crystal bar, having carbon dioxide, having the advantage of better effects if when cutting crystal bar around crystal bar.
Accompanying drawing explanation
Fig. 1 is the structural representation of a kind of wire cutting machine of the present invention.
Wherein: 1, frame 2, jig 3, station 4, line of cut 5, cell 6, heater 7, spray equipment 8, air transporting arrangement.
Detailed description of the invention
Below in conjunction with drawings and Examples, the invention will be further described.
As shown in Figure 1, a kind of wire cutting machine, comprise wire cutting machine body, wire cutting machine body has frame 1, frame is provided with jig 2, is station 3 before jig, also has line of cut 4 through station, it is characterized in that: be provided with rack-mounted cell 5 around described station, around cell, have heater 6.
Say further, described cell is also provided with spray equipment 7.
Say further, described cell is also provided with protective gas conveying device 8.
When using this wire cutting machine, can be stuck on jig by processing component, heating devices heat, processing component is having uniform temperature and is cutting at stable temperature; Further, this wire cutting machine there is also mounted spray equipment, can meet when cutting, and sprays some liquid as required, be more conducive to cutting on the parts of processing; Further, this wire cutting machine there is also mounted protective gas conveying device, and can meet when cutting, workpiece operation in required protective gas environment, what such as have can filling CO 2, argon gas, methane etc., obtains better effect.
In order to the wire cutting method of this wire cutting machine is better described, below in conjunction with embodiment further instruction.
Following examples use identical crystal bar, cut at identical wire cutting machine, make identical crystal grain.
Embodiment 1
Crystal bar cutting on line machine cuts, temperature room temperature 25 DEG C.
The qualification rate of product is 85%, and the edges and corners of qualified products---crystal grain are jagged, has sintering dizzy at crystal grain outer surface.
Embodiment 2
Crystal bar cutting on line machine cuts, utilizes the cell on wire cutting machine, little indoor are provided with heater, crystal bar and cell are all remained on 80 DEG C, cuts crystal bar.
The qualification rate of product is 91%, and the edges and corners of qualified products---crystal grain are jagged, and crystal grain has sintering dizzy outside.
Embodiment 3
Crystal bar cutting on line machine cuts, utilizes the cell on wire cutting machine, little indoor are provided with heater, crystal bar and cell are all remained on 90 DEG C, cuts crystal bar.
The qualification rate of product is 95%, and the edges and corners of qualified products---crystal grain are jagged, and crystal grain has sintering dizzy outside.
Embodiment 4
Crystal bar cutting on line machine cuts, utilizes the cell on wire cutting machine, little indoor are provided with heater, crystal bar and cell are all remained on 85 DEG C, cuts crystal bar.
The qualification rate of product is 97%, and the edges and corners of qualified products---crystal grain are jagged, and crystal grain has sintering dizzy outside.
Repeat the above embodiments, or on crystal bar, be coated with glycerine or kerosene when cutting crystal bar, or have carbon dioxide when cutting crystal bar around crystal bar.
Burr reduces, and crystal grain outer surface has sintering dizzy, and the minimizing that sintering is dizzy proves that the phenomenon that crystal grain composition changes reduces.
On crystal bar, be coated with glycerine or kerosene when cutting crystal bar simultaneously, and have carbon dioxide when cutting crystal bar around crystal bar.Burr reduces, crystal grain outer surface has sintering dizzy minimizing better effects if.
The foregoing is only some embodiments of the present invention, inventor has also done many similar experiments, lead to the same conclusion, aborning, the semiconductor refrigeration member that such welding crystal grain is produced significantly improves, the quality problems caused because of snapping only have 1%, than the raising 3 percentage points of directly welding.
Claims (8)
1. a wire cutting machine, comprises wire cutting machine body, and wire cutting machine body has frame, frame is provided with jig, is station before jig, also has line of cut through station, it is characterized in that: be provided with rack-mounted cell around described station, around cell, have heater.
2. wire cutting machine according to claim 1, is characterized in that: described cell is also provided with spray equipment.
3. wire cutting machine according to claim 1 and 2, is characterized in that: described cell is also provided with protective gas conveying device.
4. the wire cutting method of a semiconductor crystal bar, it is cut by the enterprising line of crystal bar cutting on line machine and forms, described wire cutting machine comprises wire cutting machine body, wire cutting machine body has frame, and frame is provided with jig, is station before jig, also has line of cut through station, it is characterized in that: be provided with rack-mounted cell around described station, have heater around cell, during cutting crystal bar, the temperature of crystal bar and cell is 80-90 DEG C.
5. the wire cutting method of semiconductor crystal bar according to claim 4, is characterized in that: described temperature is 85 DEG C.
6. the wire cutting method of the semiconductor crystal bar according to claim 4 or 5, is characterized in that: on crystal bar, be coated with glycerine or kerosene when cutting crystal bar.
7. the wire cutting method of the semiconductor crystal bar according to claim 4 or 5, is characterized in that:, there is carbon dioxide when cutting crystal bar around crystal bar.
8. the wire cutting method of semiconductor crystal bar according to claim 6, is characterized in that: have carbon dioxide when cutting crystal bar around crystal bar.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510463152.XA CN105058605B (en) | 2015-08-02 | 2015-08-02 | A kind of wire cutting method of wire cutting machine and semiconductor crystal bar |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510463152.XA CN105058605B (en) | 2015-08-02 | 2015-08-02 | A kind of wire cutting method of wire cutting machine and semiconductor crystal bar |
Publications (2)
| Publication Number | Publication Date |
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| CN105058605A true CN105058605A (en) | 2015-11-18 |
| CN105058605B CN105058605B (en) | 2017-08-29 |
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| CN201510463152.XA Active CN105058605B (en) | 2015-08-02 | 2015-08-02 | A kind of wire cutting method of wire cutting machine and semiconductor crystal bar |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040255924A1 (en) * | 2001-10-17 | 2004-12-23 | Sadahiko Kondo | Cutting method using wire saw, wire saw device, and method of manufacturing rare-earth magnet |
| CN1780717A (en) * | 2003-10-27 | 2006-05-31 | 三菱电机株式会社 | Multi-wire saw |
| CN101489746A (en) * | 2006-07-20 | 2009-07-22 | 田北技研株式会社 | Cutting device |
| CN101508151A (en) * | 2009-04-07 | 2009-08-19 | 宝鸡宝色特种金属有限责任公司 | Polysilicon rod thermodynamics breaking technique and device |
| CN102390094A (en) * | 2011-08-07 | 2012-03-28 | 江西金葵能源科技有限公司 | Solar-grade silicon wafer being cut by diamond wire and cutting method thereof |
| CN202241644U (en) * | 2011-09-18 | 2012-05-30 | 周文敏 | Microprocessor control crystal line cutting machine |
| CN202592556U (en) * | 2012-05-10 | 2012-12-12 | 江苏聚能硅业有限公司 | Silicon rod cutting machine utilizing recycled sand |
| US20130248500A1 (en) * | 2010-11-29 | 2013-09-26 | Yuri Georgievich Shreter | Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane |
| CN204819977U (en) * | 2015-08-02 | 2015-12-02 | 河南鸿昌电子有限公司 | Wire cut electrical discharge machining |
-
2015
- 2015-08-02 CN CN201510463152.XA patent/CN105058605B/en active Active
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040255924A1 (en) * | 2001-10-17 | 2004-12-23 | Sadahiko Kondo | Cutting method using wire saw, wire saw device, and method of manufacturing rare-earth magnet |
| CN1780717A (en) * | 2003-10-27 | 2006-05-31 | 三菱电机株式会社 | Multi-wire saw |
| CN101489746A (en) * | 2006-07-20 | 2009-07-22 | 田北技研株式会社 | Cutting device |
| CN101508151A (en) * | 2009-04-07 | 2009-08-19 | 宝鸡宝色特种金属有限责任公司 | Polysilicon rod thermodynamics breaking technique and device |
| US20130248500A1 (en) * | 2010-11-29 | 2013-09-26 | Yuri Georgievich Shreter | Method of Separating Surface Layer of Semiconductor Crystal Using a Laser Beam Perpendicular to the Separating Plane |
| CN102390094A (en) * | 2011-08-07 | 2012-03-28 | 江西金葵能源科技有限公司 | Solar-grade silicon wafer being cut by diamond wire and cutting method thereof |
| CN202241644U (en) * | 2011-09-18 | 2012-05-30 | 周文敏 | Microprocessor control crystal line cutting machine |
| CN202592556U (en) * | 2012-05-10 | 2012-12-12 | 江苏聚能硅业有限公司 | Silicon rod cutting machine utilizing recycled sand |
| CN204819977U (en) * | 2015-08-02 | 2015-12-02 | 河南鸿昌电子有限公司 | Wire cut electrical discharge machining |
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| Publication number | Publication date |
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| CN105058605B (en) | 2017-08-29 |
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