CN102825670A - Method for slicing solar silicon rod - Google Patents
Method for slicing solar silicon rod Download PDFInfo
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- CN102825670A CN102825670A CN 201210344465 CN201210344465A CN102825670A CN 102825670 A CN102825670 A CN 102825670A CN 201210344465 CN201210344465 CN 201210344465 CN 201210344465 A CN201210344465 A CN 201210344465A CN 102825670 A CN102825670 A CN 102825670A
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Abstract
The invention relates to a method for slicing a solar silicon rod. The method comprises the following steps: a, cutting off; b, silicon rod bonding; c, slicing; d, degumming; e, barreling; f, flat grinding; g, polishing; h, rod sticking; i, cutting; j, flushing; k, glue scraping; l, slice inserting; m, cleaning; n, drying; and o, package inspecting. By adopting the process flow, the method for slicing the solar silicon rod can effectively improve the finished product rate of the cut silicon slices, avoids the influence on the silicon rod in the cutting process, and effectively improves slicing efficiency.
Description
Technical field
The present invention relates to the solar silicon wafers machining technology, especially a kind of dicing method of solar energy silicon rod.
Background technology
When being cut into the sheet silicon chip, adopt the solar energy silicon rod wire to cut mostly; After basic silicon chip shape has machined when silicon rod is being cut to mucilage glue surface; Because causing polysilicon chip to be expanded to the rear and front end of polycrystalline silicon rod with glue friction generates high temperature, wire forms a fan-shaped shape when in the end receiving the wire bow in the high-speed motion process; The change of this shape can cause silicon chip to collapse the limit phenomenon to be increased, and directly influences the yield rate of silicon rod, and it is in the silicon chip slicing processes; The glue of silicon chip surface is difficult to remove, thereby influences the quality of silicon chip.
Summary of the invention
The technical problem that the present invention will solve is: in order to overcome the above-mentioned middle problem that exists, a kind of dicing method of solar energy silicon rod is provided, it adopts this kind technological process, can improve the yield rate of silicon chip effectively.
The technical solution adopted for the present invention to solve the technical problems is: a kind of dicing method of solar energy silicon rod, and concrete steps are following:
A. cut off: the long rod that crystal pulling is drawn is cut into pole;
B. silicon rod is bonding: satisfactory silicon rod is selected in (1); (2) after being fastened on the adhering machine through anchor clamps silicon rod, silicon rod is heated, the silicon rod to once heated after heating finishes cools off;
C. section: the silicon rod after the bonding end placed vertically after compressing silicon rod through press strip on the butt machine silicon rod is cut into slices;
D. come unstuck: the silicon rod after will cutting into slices is put into the pond of coming unstuck and is soaked, and soaks the back and takes out silicon rod, removes the glue on silicon rod surface;
E. barreling: the silicon rod that will take off glue is polished through tumbling mill;
F. plain grinding;
G. polishing;
H. sticking rod: the round as a ball good crystal bar of will cutting into slices solidifies after being placed on and being bonded in crystal bar on the glass backing plate with glue in the environment of constant temperature, constant humidity;
I. cutting: bonding silicon rod is cut into slices through slicer;
J. flushing: the silicon chip after section finishes washes with clear water;
K. frictioning: the silicon chip after will washing carries out frictioning to be handled;
L. inserted sheet: the silicon chip behind the frictioning is plugged on the silicon wafer carrier;
M. clean: the silicon chip on the silicon wafer carrier is put into cleaning machine clean;
N. dry: cleaned silicon chip is put into the drier drying of heating;
O. test package: the packing of testing of the silicon chip after will drying, thus form finished product.
Be 5～10min heat time heating time among the b, and be 10～20min cool time.
For can be more convenient to operate in the process of coming unstuck, soak time be 5min among the d.
More firm for crystal bar is bonded on the glass backing plate, setting time was greater than 8 hours among the h.
The invention has the beneficial effects as follows: the dicing method of described solar energy silicon rod, adopt this technological process, can effectively make the silicon chip yield rate that cuts out, avoided in the operation cutting process, causing the influence of silicon rod, improved the operating efficiency of section effectively.
The specific embodiment
Combine the present invention to do further detailed explanation now.
Embodiment:
The dicing method of solar energy silicon rod shown in the present, concrete steps are following:
A. cut off: the long rod that crystal pulling is drawn is cut into the pole about 300mm according to the unit production requirement;
B. silicon rod is bonding: (1) selects diameter more than 153mm and do not have a deformity, the silicon rod of length more than 200mm; (2) the silicon rod silicon rod is put into reposefully the anchor clamps of adhering machine, tightened anchor clamps (note: four contact-making surfaces of anchor clamps must be separated fully with silicon rod and touch), the chassis adhering machine support of packing into, the bolt of screwing on (not tightening); Move silicon rod clamper, make the silicon rod end face touch the chassis,, tighten the chassis bolt four jiaos of alignment on the brilliant line of silicon rod and chassis; Withdraw from silicon rod clamper, put down heating plate, promote anchor clamps, Gui Bang ﹑ heating plate and chassis are held out against, and the locking fixture track bolt.Earlier by left heat button, heat the chassis during heating, general selection of time 15～20 minutes is then by right heat button; The heating silicon rod, general selection of time 5～10 clocks were opened the preheating of glue rifle in 5 minutes in advance, and heating finishes; Unclamp the anchor clamps track bolt, move anchor clamps, put on heating plate, spread upon the chassis end face equably with glue small of the stock glue; After smearing, enforce silicon rod clamper, silicon rod is contacted fully, the locking fixture track bolt with the chassis; Stamp glue with the junction on glue small of the stock silicon rod and chassis again; Open blower fan and make air outlet aim at the junction cooling on silicon rod and chassis, the general time is 10～20 minutes;
C. section: the workbench speed of moving up and down is generally 0.15mm/s; Saw band speed of service 16-17m/s; Place bonding four intact silicon rods vertically on the workbench of butt machine, make the chassis put into the pallet of butt machine platform stably, pass the chassis with press strip; And with the locked press strip of bolt, this moment, silicon rod can not rock; Shut protective door then;
D. come unstuck: in the pond of coming unstuck, inject half Chi Shui and open heater switch, the general water temperature autumn and winter are controlled at 95 ℃, and spring and summer is controlled at about 80 ℃; Peel off flaw-piece to the silicon rod that takes out from the butt machine; Put into the pond of coming unstuck that has heated, general about 5 minutes, glue began to soften; Take out silicon rod this moment, remove the glue on silicon rod and the chassis with the alcohol perching knife; Put the hot water in the pond of anhydrating, the back that finishes gets into next procedure: barreling;
E. barreling: be placed on the silicon rod carriage in the middle of tumbling mill two anchor clamps, be placed on the silicon rod that has taken off glue on the carriage, tighten anchor clamps with special spanner, take out carriage, the four paws of anchor clamps will be close on the silicon rod, and it is loosening not allow any one side; With the depth of parallelism between dial gauge calibration silicon rod and emery wheel, make the error ﹤ 5s at silicon rod two ends then, this procedure is very important; Need operative employee's patience to adjust exactly, the silicon rod chamfering that grinds if the two ends error is bigger than normal is uneven, causes unnecessary loss; After silicon rod was adjusted, the move left and right bistrique made bistrique apart from the about 1-2mm of silicon rod; The crawl silicon rod measures the maximum gauge of silicon rod with slide calliper rule; Load onto protective cover, get into the automatic barreling picture of touch-screen, the maximum gauge+2mm of input silicon rod blank; By round as a ball startup, barreling begins automatically, and after barreling finished automatically, whether qualified with slide calliper rule inspection silicon rod diameter, the hand rotation anchor clamps made a planar horizontal of silicon rod vertical, fill in carriage, unclamps and withdraws from anchor clamps, takes off silicon rod; Barreling finishes;
F. plain grinding;
G. polishing;
H. sticking rod: the round as a ball good crystal bar of will cutting into slices solidifies after being placed on and being bonded in crystal bar on the glass backing plate with glue in the environment of constant temperature, constant humidity, carries out cutting action after solidifying more than eight hours;
I. cutting: bonding silicon rod is cut into slices through slicer;
J. flushing: the silicon chip after section finishes washes with clear water;
K. frictioning: the silicon chip after will washing carries out frictioning to be handled;
L. inserted sheet: the silicon chip behind the frictioning is plugged on the silicon wafer carrier;
M. clean: the silicon chip on the silicon wafer carrier is put into cleaning machine clean;
N. dry: cleaned silicon chip is put into the drier drying of heating;
O. test package: the packing of testing of the silicon chip after will drying, thus form finished product, and then sell.
With above-mentioned foundation desirable embodiment of the present invention is enlightenment, and through above-mentioned description, the related work personnel can carry out various change and modification fully in the scope that does not depart from this invention technological thought.The technical scope of this invention is not limited to the content on the specification, must confirm its technical scope according to the claim scope.
Claims (4)
1. the dicing method of a solar energy silicon rod is characterized in that concrete steps are following:
A. cut off: the long rod that crystal pulling is drawn is cut into pole;
B. silicon rod is bonding: satisfactory silicon rod is selected in (1); (2) after being fastened on the adhering machine through anchor clamps silicon rod, silicon rod is heated, the silicon rod to once heated after heating finishes cools off;
C. section: the silicon rod after the bonding end placed vertically after compressing silicon rod through press strip on the butt machine silicon rod is cut into slices;
D. come unstuck: the silicon rod after will cutting into slices is put into the pond of coming unstuck and is soaked, and soaks the back and takes out silicon rod, removes the glue on silicon rod surface;
E. barreling: the silicon rod that will take off glue is polished through tumbling mill;
F. plain grinding;
G. polishing;
H. sticking rod: the round as a ball good crystal bar of will cutting into slices solidifies after being placed on and being bonded in crystal bar on the glass backing plate with glue in the environment of constant temperature, constant humidity;
I. cutting: bonding silicon rod is cut into slices through slicer;
J. flushing: the silicon chip after section finishes washes with clear water;
K. frictioning: the silicon chip after will washing carries out frictioning to be handled;
L. inserted sheet: the silicon chip behind the frictioning is plugged on the silicon wafer carrier;
M. clean: the silicon chip on the silicon wafer carrier is put into cleaning machine clean;
N. dry: cleaned silicon chip is put into the drier drying of heating;
O. test package: the packing of testing of the silicon chip after will drying, thus form finished product.
2. the dicing method of solar energy silicon rod according to claim 1 is characterized in that: be 5～10min heat time heating time among the b, and be 10～20min cool time.
3. the dicing method of solar energy silicon rod according to claim 1 is characterized in that: soak time is 5min among the d.
4. the dicing method of solar energy silicon rod according to claim 1 is characterized in that: setting time was greater than 8 hours among the h.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210344465 CN102825670A (en) | 2012-09-17 | 2012-09-17 | Method for slicing solar silicon rod |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201210344465 CN102825670A (en) | 2012-09-17 | 2012-09-17 | Method for slicing solar silicon rod |
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| CN102825670A true CN102825670A (en) | 2012-12-19 |
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| CN 201210344465 Pending CN102825670A (en) | 2012-09-17 | 2012-09-17 | Method for slicing solar silicon rod |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104015268A (en) * | 2013-09-24 | 2014-09-03 | 中磁科技股份有限公司 | NdFeB permanent magnetic material processing method and device |
| CN105965706A (en) * | 2016-05-24 | 2016-09-28 | 浙江海顺新能源有限公司 | Solar grade crystal silicon slicing technique |
| CN106182478A (en) * | 2016-08-24 | 2016-12-07 | 安徽正田能源科技有限公司 | A kind of cutting technique of single gold silicon silicon body |
| CN106670047A (en) * | 2016-11-23 | 2017-05-17 | 阜宁协鑫光伏科技有限公司 | Production method of automatic rod bonding assembly line |
| CN106680272A (en) * | 2016-07-14 | 2017-05-17 | 宜特(上海)检测技术有限公司 | Slicing method of section polishing instrument |
| CN107738370A (en) * | 2017-10-27 | 2018-02-27 | 四川永祥硅材料有限公司 | A kind of polysilicon chip preparation technology |
| CN108262647A (en) * | 2018-01-23 | 2018-07-10 | 滁州英诺信电器有限公司 | A kind of cutting method of photoelectric material |
| CN111452236A (en) * | 2020-04-16 | 2020-07-28 | 西安奕斯伟硅片技术有限公司 | Crystal bar bonding method and crystal bar bonding device |
| CN111730771A (en) * | 2020-06-09 | 2020-10-02 | 安徽利锋机械科技有限公司 | Wafer cutting machine |
| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
-
2012
- 2012-09-17 CN CN 201210344465 patent/CN102825670A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104015268A (en) * | 2013-09-24 | 2014-09-03 | 中磁科技股份有限公司 | NdFeB permanent magnetic material processing method and device |
| CN105965706A (en) * | 2016-05-24 | 2016-09-28 | 浙江海顺新能源有限公司 | Solar grade crystal silicon slicing technique |
| CN106680272B (en) * | 2016-07-14 | 2019-06-28 | 宜特(上海)检测技术有限公司 | The dicing method of Cross section polishing instrument |
| CN106680272A (en) * | 2016-07-14 | 2017-05-17 | 宜特(上海)检测技术有限公司 | Slicing method of section polishing instrument |
| CN106182478A (en) * | 2016-08-24 | 2016-12-07 | 安徽正田能源科技有限公司 | A kind of cutting technique of single gold silicon silicon body |
| CN106670047A (en) * | 2016-11-23 | 2017-05-17 | 阜宁协鑫光伏科技有限公司 | Production method of automatic rod bonding assembly line |
| CN107738370A (en) * | 2017-10-27 | 2018-02-27 | 四川永祥硅材料有限公司 | A kind of polysilicon chip preparation technology |
| CN108262647A (en) * | 2018-01-23 | 2018-07-10 | 滁州英诺信电器有限公司 | A kind of cutting method of photoelectric material |
| CN111452236A (en) * | 2020-04-16 | 2020-07-28 | 西安奕斯伟硅片技术有限公司 | Crystal bar bonding method and crystal bar bonding device |
| CN111452236B (en) * | 2020-04-16 | 2022-05-03 | 西安奕斯伟材料科技有限公司 | Crystal bar bonding method and crystal bar bonding device |
| CN111730771A (en) * | 2020-06-09 | 2020-10-02 | 安徽利锋机械科技有限公司 | Wafer cutting machine |
| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| CN114670352B (en) * | 2022-05-26 | 2022-08-12 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
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Application publication date: 20121219 |