CN102744796A - Silicon ingot slicing quality monitoring system and monitoring method - Google Patents
Silicon ingot slicing quality monitoring system and monitoring method Download PDFInfo
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- CN102744796A CN102744796A CN2012102061886A CN201210206188A CN102744796A CN 102744796 A CN102744796 A CN 102744796A CN 2012102061886 A CN2012102061886 A CN 2012102061886A CN 201210206188 A CN201210206188 A CN 201210206188A CN 102744796 A CN102744796 A CN 102744796A
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Abstract
The invention discloses a silicon ingot slicing quality monitoring system and a monitoring method. The silicon ingot slicing quality monitoring system comprises a slicing device, a detection device for detecting temperature at a crystal bar cutting part, and a control device with a central processing unit. The slicing device comprises an inner wall plate of a slicer. A crystal bar to be cut, a crystal tray for bonding the crystal bar, a pair of guide wheels below the crystal bar and a steel wire net for grinding the crystal bar winded between the guide wheels are arranged on one side of the inner wall plate. The detection device comprises an infrared sensor arranged on the inner wall plate. The infrared sensor is connected with a temperature inductive circuit through a transmission line. The extending direction of a central line of a probe of the infrared sensor is aligned with a middle position of the steel wire net which grinds the end surfaced of the crystal bar. The temperature inductive circuit transmits the collected data to the central processing unit after the data is processed. According to the silicon ingot slicing quality monitoring system and the monitoring method provided by the invention, the slicing process can be effectively controlled, and deficiencies such as crack edge, half piece, and rubber-faced broken piece with unfilled corner generated randomly in the slicing process are reduced, thereby realizing more stable slicing quality and higher slicing benefit.
Description
Technical field
The present invention relates to technical field of solar cell manufacturing, especially a kind of silicon ingot chipping qualities monitoring system and the method for using this system that the silicon ingot chipping qualities is monitored.
Background technology
Main method to single polycrystalline crystal block slicing has two kinds at present: the one, and the single polycrystalline crystal block of diamond dust grinding that structure is utilized structure steel wire high-speed cruising to drive and is suspended among the PEG is realized section; The 2nd, directly utilize the surface to inlay or be coated with the single polycrystalline crystal block realization of the Buddha's warrior attendant line high-speed motion grinding section of the high rigidity material of eka-gold emery.First method is because its technology is relatively stable, and integrated cost has than clear superiority at present, and this dicing method is all adopted in domestic batch process.
First kind of slice process required most important auxilliary material of using usually is that diamond dust and suspension (gather hexylene glycol-PEG200) and steel wire.The quality of auxilliary material amount is the decision chipping qualities directly, and we all have monitoring to auxilliary material usually, and the monitor control index of diamond dust mainly contains: particle size distribution, particle surface be degree and grain shape and hardness etc. totally; The monitor control index of suspension mainly contains: pH value, mean molecule quantity, viscosity, metal ion content, electrical conductivity etc.; The monitor control index of steel wire mainly contains: diameter, ovality and tensile strength etc.On the basis that the main auxilliary material amount of section is monitored and controlled; The stability of chopper and slicer and precision also will directly determine the quality of cutting into slices; But along with the further research of single polycrystalline crystal bar section is concluded and summed up and find; Normal and the stable guaranteed necessary condition of chipping qualities that is merely of the auxilliary material of being monitored at present and each parameter of equipment operation; It is not necessary and sufficient condition; All stable and in control range in all auxilliary material parameters of above monitoring, and each operational factor of being monitored of chopper and slicer itself is all in target zone the time, even chipping qualities still has very big fluctuation after removing human factor and other external factor under the bigger process conditions of relatively stable process window.Such as collapsing limit unfilled corner sheet, crackle half sheet that produces at random in the slicing processes and glue face be difficult to clearly explain cause usually; Can't effectively control more, this just explains that going back some important parameter that influences chipping qualities also fails by effective monitoring control in present slice systems.
Summary of the invention
The technical problem that the present invention will solve is: overcome the deficiency in the prior art; A kind of silicon ingot chipping qualities monitoring system and monitoring method are provided; Effectively control the slice process process; Reduce the crack gage, half sheet, the glue face that produce at random in the slicing processes and collapse defectives such as limit unfilled corner sheet, realize more stable chipping qualities and the section benefit of Geng Gao.
The technical solution adopted for the present invention to solve the technical problems is: a kind of silicon ingot chipping qualities monitoring system; Comprise slicing device, be used to detect the checkout gear of crystal bar cut place temperature and the control device that has central processing unit; Slicing device comprises the inside panel of slicer; Inside panel one side have crystal bar to be cut, the bonding crystal bar the crystalline substance holder, at a pair of guide wheel below the crystal bar and around the steel wire gauze that is used for the grinding crystal bar between the guide wheel; Described checkout gear comprises the infrared ray sensor that is located on the inside panel; Infrared ray sensor is connected with the temperature sense circuit through transmission line, and the midway the when bearing of trend of infrared ray sensor center probe line is aimed at steel wire gauze grinding crystal bar end face is sent to central processing unit after the data of temperature sense circuit with collection.
Further, handle for the crystal bar reflected signal that infrared ray sensor is received, described temperature sense circuit comprises signal amplifier and power amplifier.
Described infrared ray sensor is set with protecting sheathing outward, in case mortar splashes and pollution that infrared ray sensor is produced during the grinding of principal vertical line saw.
A kind of method of using above-mentioned monitoring system the silicon ingot chipping qualities to be carried out Monitoring and Controlling: infrared ray sensor is accepted the infrared ray of cutting crystal bar end face maximum temperature place's reflection; Utilize object its reflectivity different characteristic of infrared ray to different temperatures; The crystal bar reflected signal that infrared ray sensor is received; To the temperature sense circuit, signal amplifier in the temperature sense circuit and power amplifier are sent to central processing unit and carry out data after handling through transmission line; At last send instruction the cutting feed speed of crystal bar is adjusted, to guarantee chipping qualities by the PID master control programme.
The invention has the beneficial effects as follows: the present invention is through increasing by a cover infrared ray temperature-detecting device in the slicing device of single polycrystalline crystal block; The temperature signal of survey crystal block cut place is transferred to central control system; Realize instant the measurement and the control slice process; Thereby realize the boule temp in the control cutting process, finally reach higher chipping qualities, reduce the crack gage, half sheet, the glue face that produce at random in the slicing processes and collapse limit unfilled corner sheet ratio; TTV, the stria of the silicon chip of cutting also have obvious reduction simultaneously, and the silicon chip quality and benefits is significantly improved.
Description of drawings
Below in conjunction with accompanying drawing and embodiment the present invention is further specified.
Fig. 1 is a structural representation of the present invention.
Fig. 2 is the left view of Fig. 1.
Fig. 3 is the change curve of the crystal bar maximum temperature of monitoring.
1. inside panels, 2. crystal bars, 3. brilliant holder 4. guide wheels 5. steel wire gauzes 6. infrared ray sensors 7. transmission lines 8. temperature sense circuit 9. protecting sheathings among the figure
The specific embodiment
Combine accompanying drawing and preferred embodiment that the present invention is further described now.These accompanying drawings are the sketch map of simplification, basic structure of the present invention only is described in a schematic way, so it only show the formation relevant with the present invention.
Like Fig. 1, a kind of silicon ingot chipping qualities monitoring system shown in Figure 2, comprise slicing device, be used to detect the checkout gear of crystal bar cut place temperature and the control device that has central processing unit.
Slicing device, comprise the inside panel 1 of slicer, inside panel 1 one sides have the crystalline substance holder 3 of crystal bar to be cut 2, bonding crystal bar 2, at a pair of guide wheel 4 below the crystal bar 2 and around the steel wire gauze 5 that is used for grinding crystal bar 2 between the guide wheel 4; Checkout gear; Comprise the infrared ray sensor 6 that is located on the inside panel 1; The outer protecting sheathings 9 that are set with of infrared ray sensor 6, mortar splashes and pollution that infrared ray sensor 6 is produced when preventing 5 grindings of steel wire gauze, and infrared ray sensor 6 is connected with temperature sense circuit 8 through transmission line 7; Midway when the bearing of trend of infrared ray sensor 6 center probe lines is aimed at steel wire gauze 5 grinding crystal bars 2 end faces is sent to central processing unit after the data of temperature sense circuit 8 with collection.
A kind of method of using above-mentioned monitoring system the silicon ingot chipping qualities to be carried out Monitoring and Controlling: infrared ray sensor 6 is accepted the infrared ray of cutting crystal bar 2 end face maximum temperature places reflection; Utilize object its reflectivity different characteristic of infrared ray to different temperatures; Crystal bar 2 reflected signals that infrared ray sensor 6 is received; Be transferred to temperature sense circuit 8 through transmission line 7, signal amplifier in temperature sense circuit 8 and power amplifier are sent to central processing unit and carry out data after handling; At last send instruction the cutting feed speed of crystal bar 2 is adjusted, to guarantee chipping qualities by the PID master control programme.
This invention is through increasing by a cover infrared ray temperature-detecting device on chopper and slicer commonly used; Be applicable to all chopper and slicers that the present enterprise of cutting into slices adopts; As: MB264, MB271, HCT-B5, DJZG, NTC-442, PV-800, PV-1000; This monitoring system can be measured the temperature highest zone temperature of crystal bar in the slicing processes immediately; Write down and handle preservation; Simultaneously this temperature is fed back to PID control system; The technological parameter of in time regulating in the control slicing processes (adjusting of technological parameter mainly is linear speed and platform number) is realized better chipping qualities. cutting finishes the back and combines other parameter process daily record and this temperature curve, and the ruuning situation in the analysis slicing processes that just can be more perfect, thus more effectively reach better chipping qualities and benefit through the cutting power (new old sand ratio and particle size distribution) of optimizing suspension characteristics (viscosity density and thermal diffusivity) and diamond dust.Collapse limit unfilled corner sheet ratio thereby reduced the crack gage, half sheet, the glue face that produce at random in the slicing processes, TTV, the stria of the silicon chip of cutting also have obvious reduction simultaneously, and the silicon chip quality is obviously improved, and this further provides assurance for silicon chip at the yield of battery-end.
The temperature and the cutting technique of crystal bar 2 temperature highest zone are closely bound up in the slicing processes, and according to a large amount of test statisticses and summing up experience, the relevance between cutting crystal bar 2 maximum temperatures and the cutting technique relevant parameter can be represented through following formula:
Th=C1*Vt
2+C2*Vt+C3*Vl
2+C4*Vl+C5*Vt*Vl+C6/D。
Wherein, Th is the maximum temperature of crystal bar 2 in the whole slicing processes, and Vt is a maximum stage speed (mm/min) in the whole slicing processes, and Vl is a maximum steel wire speed (m/s) in the whole slicing processes; D is steel wire diameter (mm); C1, C2, C3, C4, C5, C6 are constant, and with cutting machine type and used steel wire diameter, factors such as mortar suspension model and ambient temperature and humidity are relevant.
The core of this invention is its automatic control system; After infrared ray sensor 6 detected crystal bar 2 temperature are greater than desired temperature; The PID central control system is according to the automatic adjusting process parameter of above temperature model (feed speed of cutting crystal bar 2); Make crystal bar 2 maximum temperatures recover normal, thereby guaranteed chipping qualities.
For example: as the crystal bar of testing 2 temperature T h1>during the crystal bar 2 maximum temperature Th of default, this system adjusts control speed of table Vt to Vt1 automatically, and Vt1 is satisfied:
Th1-2=C1*Vt1
2+C2*Vt?1+C3*Vl
2+C4*Vl+C5*Vt1*Vl+C6/D
Following table is the setting value of each parameter value and crystal bar 2 maximum temperatures in the slicing processes under the section board different technology conditions, and the board useful load is for (780 ± 20mm) 156 * 156 polycrystalline, mortar configuration use No. 1200 diamond dust and PEG200 configuration to form, cut into slices, and to consume mortar greater than 6500kg/h, average every cutter be that (300 ± 100) kg, section slurry density are 1.6-1.7g/cm3,0.3mm/min < Vt < 0.5mm/>min, 12m/s < Vl < 14m/>s, 0.1mm < steel wire diameter D < 0.15mm to board recirculation system sand slurry flow.
In the last table constant C 1, C2, C3, C4, C5, C6 be under different technology conditions as under maximum stage speed, maximum line speeds, the steel wire diameter, the crystal bar control point maximum temperature substitution temperature setting program formula that under the state of normal section, a large amount of monitoring of being carried out is obtained: Th=C1*Vt
2+ C2*Vt+C3*Vl
2+ C4*Vl+C5*Vt*Vl+C6/D carries out the quadratic fit gained, and the increase of maximum stage speed Vt and steel wire operation maximum line speeds Vl all can cause the cutting into slices rising of crystal bar maximum temperature, the increase of steel wire diameter can make the reduction of section crystal bar maximum temperature.For example: under Vt=0.35mm/min, Vl=13m/s, steel wire diameter 0.13mm, the highest probe temperature of crystal bar is 62.9 degrees centigrade, and the highest probe temperature of crystal bar rises to 69.2 degrees centigrade when only increasing Vt to 0.4mm/min; The highest probe temperature of crystal bar rises to 64.7 degrees centigrade when only increasing steel wire operation maximum line speeds Vl to 13.5m/s; When steel wire diameter D can reduce section crystal bar maximum temperature to 62.6 degree centigrade when 0.13mm increases to 0.135mm.Above data show that the filleter makes the platform speed of service section crystal bar maximum temperature is had the greatest impact simultaneously.
Fig. 3 is the change curve of crystal bar 2 maximum temperatures that adopt the MB264 slicer and monitored; The maximum temperature upper limit for test section crystal bar of curve 2 expressions of straight line type above among the figure; Below complications curve 1 expression be the maximum temperature of actual test section crystal bar, its process conditions are: useful load is that the size 156*156 polycrystalline, mortar of 790mm formed, cut into slices that to starch flow be that 7000kg/h, hilted broadsword consumption mortar are that 290kg, section slurry density are that 1.65g/cm3, the maximum table speed of cutting into slices Vt=0.4mm/min, maximum steel wire speed are that 12.5m/s, steel wire diameter are by empirical equation: Th=C under these process conditions of 0.12mm. to the board recirculation system sand by No. 1200 diamond dust and PEG200 configuration
1* Vt
2+ C
2* Vt+C
3* Vl
2+ C
4Vl+C
5* Vt*Vl+C
6/ D calculates; Crystal bar 2 maximum temperatures of setting are 68.2 degrees centigrade; Wherein mark " 3 " institute detected crystal bar 2 maximum temperatures in circle place are higher than setting value in figure, and then system is through PID and setting program (target is 1 degree centigrade of downward modulation crystal bar 2 maximum temperature), calculate linear speed remain unchanged need down adjustment original set moment the speed of table by 0.4mm/min to 0.392mm/min; Hold time and to pass through default; Be generally 2min-10min, the back is recovered previous system and is set technology. and this control system shows in the result that MB-264 implements, can significantly reduce the crack gage, half sheet, the glue face that produce in the slicing processes and collapse limit unfilled corner sheet ratio; TTV, the stria of the silicon chip of cutting also have obvious reduction simultaneously, and the silicon chip quality is obviously improved.
The present invention is through increasing by an infrared temperature monitoring of cover and a control system in single polycrystalline crystal block slicing equipment; Realize instant the measurement and the control slice process; Thereby realize crystal bar 2 temperature in the control cutting process, finally reach higher chipping qualities, reduced the crack gage, half sheet, the glue face that produce at random in the slicing processes and collapsed limit unfilled corner sheet ratio; TTV, the stria of the silicon chip of cutting also have obvious reduction simultaneously, and the silicon chip quality and benefits is significantly improved.
The foregoing description only is explanation technical conceive of the present invention and characteristics; Its purpose is to let the personage that is familiar with this technology can understand content of the present invention and implements; Can not limit protection scope of the present invention with this; All equivalences that spirit is done according to the present invention change or modify, and all should be encompassed in protection scope of the present invention.
Claims (4)
1. silicon ingot chipping qualities monitoring system; Comprise slicing device, be used to detect the checkout gear of crystal bar cut place temperature and the control device that has central processing unit (10); Slicing device comprises the inside panel (1) of slicer; Inside panel (1) one side have crystal bar to be cut (2), bonding crystal bar (2) crystalline substance holder (3), be positioned at a pair of guide wheel (4) of crystal bar (2) below and around the steel wire gauze (5) that is used for grinding crystal bar (2) between the guide wheel (4); It is characterized in that: described checkout gear comprises the infrared ray sensor (6) that is located on the inside panel (1); Infrared ray sensor (6) is connected with temperature sense circuit (8) through transmission line (7); Midway when the bearing of trend of infrared ray sensor (6) center probe line is aimed at steel wire gauze (5) grinding crystal bar (2) end face is sent to central processing unit after the data of temperature sense circuit (8) with collection.
2. silicon ingot chipping qualities monitoring system according to claim 1 has signal amplifier (81) and power amplifier (82) in the described temperature sense circuit (8).
3. silicon ingot chipping qualities monitoring system according to claim 1, the outer protecting sheathing (9) that is set with of described infrared ray sensor (6).
4. silicon ingot chipping qualities monitoring and control method; It is characterized in that: infrared ray sensor (6) is accepted the infrared ray of cutting crystal bar (2) end face maximum temperature place's reflection; Utilize object its reflectivity different characteristic of infrared ray to different temperatures; Crystal bar (2) reflected signal that infrared ray sensor (6) is received; Be transferred to temperature sense circuit (8) through transmission line (7), signal amplifier (81) in temperature sense circuit (8) and power amplifier (82) are sent to central processing unit (10) and carry out data after handling; Send instruction by the PID master control programme at last the cutting feed speed of crystal bar (2) is adjusted, to guarantee chipping qualities.
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| CN103707428A (en) * | 2013-12-31 | 2014-04-09 | 镇江市港南电子有限公司 | Monitoring device of silicon wafer collection equipment |
| CN103921358A (en) * | 2014-03-11 | 2014-07-16 | 浙江晶盛机电股份有限公司 | Full-automatic integrated cutting and grinding combined machining device for monocrystalline silicon rods |
| CN105984041A (en) * | 2014-10-29 | 2016-10-05 | 应用材料瑞士有限责任公司 | Wire monitoring system |
| CN105984042A (en) * | 2014-10-29 | 2016-10-05 | 应用材料瑞士有限责任公司 | Wire monitoring system, wire saw device and method for monitoring wire |
| CN106313353A (en) * | 2015-07-03 | 2017-01-11 | 天津职业技术师范大学 | Online monitoring device and method for wire bow of wire mesh of multi-wire sawing machine |
| CN113474137A (en) * | 2020-02-21 | 2021-10-01 | 贝斯荷兰有限公司 | Sawing device and method for forming a saw cut in a semiconductor product |
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| WO2023226313A1 (en) * | 2022-05-26 | 2023-11-30 | 西安奕斯伟材料科技股份有限公司 | Crystal-bar manufacturing management method and crystal-bar manufacturing management system |
| CN117549441A (en) * | 2024-01-11 | 2024-02-13 | 东晶电子金华有限公司 | Quartz crystal processing method |
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| CN114670352A (en) * | 2022-05-26 | 2022-06-28 | 广东高景太阳能科技有限公司 | Real-time automatic control silicon wafer production method, system, medium and equipment |
| WO2023226313A1 (en) * | 2022-05-26 | 2023-11-30 | 西安奕斯伟材料科技股份有限公司 | Crystal-bar manufacturing management method and crystal-bar manufacturing management system |
| CN117549441A (en) * | 2024-01-11 | 2024-02-13 | 东晶电子金华有限公司 | Quartz crystal processing method |
| CN117549441B (en) * | 2024-01-11 | 2024-04-19 | 东晶电子金华有限公司 | Quartz crystal processing method |
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Application publication date: 20121024 |