CN108942639A - A kind of feedback of making technology parameter - Google Patents
A kind of feedback of making technology parameter Download PDFInfo
- Publication number
- CN108942639A CN108942639A CN201810596414.3A CN201810596414A CN108942639A CN 108942639 A CN108942639 A CN 108942639A CN 201810596414 A CN201810596414 A CN 201810596414A CN 108942639 A CN108942639 A CN 108942639A
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- wafer
- ground
- control equipment
- grinding
- equipment
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/005—Control means for lapping machines or devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67276—Production flow monitoring, e.g. for increasing throughput
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Automation & Control Theory (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The present invention provides a kind of feedbacks of making technology parameter, are applied to chemical mechanical milling tech, comprising: obtain the first product information of a wafer to be ground and be sent to automated procedures control equipment；Advanced technologies control equipment obtains the milling time of wafer to be ground according to the first product information and a normal abrasive rate processing and feeds back to automated procedures control equipment；Automated procedures control equipment and generate regulating command chemical-mechanical grinding device according to milling time, and the milling time of wafer to be ground is adjusted according to regulating command；After the completion of current grinding wafer to be ground, the measuring value of the thickness of metal film of the wafer after the completion of being ground；Advanced technologies control equipment and handle acquisition grinding rate according to measuring value, configure normal abrasive rate for the grinding rate that processing obtains.The beneficial effect of its technical solution is, can effectively solve to lead to metal film offset issue, to reach requirement of the advanced technologies to metal film grinding making technology.
Description
Technical field
The present invention relates to technical field of semiconductor preparation more particularly to a kind of feedbacks of making technology parameter.
Background technique
In the production of technical field of semiconductors, (chemical mechanical polish, CMP chemical machinery is ground CMP
Mill) it is one of very important processing step.This technique realizes advanced process development and logical design is smooth to crystal column surface
The requirement for height of degree realizes the accurate duplication of figure, realizes the superposition of more metal layers, to substantially increase device
Performance.
Since the grinding efficiency (i.e. unit time grind off thickness of metal film) of chemical-mechanical grinding device can be with added
Work handles the increase of bulk article, that is, wafer quantity and reduces, and will lead to even if under same operating condition, post-processing is in batches
The thickness of metal film of product is thicker than what is processed before, so that film thickness value is gradually deviated from the requirement of technique.
In order to solve this problem, existing general micro- using operating condition progress of the feedback system to downstream product
It adjusts, i.e., the film thickness value of product is measured respectively before and after CMP process, through film thickness difference and product in the actual grinding on CMP
Between calculate the current grinding efficiency of equipment.When later batch product needs to carry out CMP working process, feedback system by adjusting
Parameter in operating condition changes milling time, so that the film thickness value of later batch product after processing is completed is unlikely to too to deviate
The requirement of technique.
In the actual production process, with the continuous development of semiconductor technology, the requirement that technique grinds CMP copper is not yet
Disconnected raising.
The deviation that technologic high request not only embodies between product film thickness after processing and technique requirement film thickness will be use up can
Can it is small, the film thickness deviation being also embodied in bulk article between individual products is small as far as possible.And it is based on bulk article institute
In the feedback of progress and the above-mentioned solution of adjustment, have the following defects,
Since preceding batch products carry out film thickness value measurement in CMP process again after processing is completed, it will cause before measuring completion
The multiple batch products processed into CMP process are unable to get reasonable adjustment, so that the film thickness deviation of technique requirement be not achieved.
Due to feedback system adjustment be batch products operating condition, rather than individual products, this can make individual products
Between film thickness deviation be unable to improve.
Summary of the invention
For the above problem existing for grinding technics is executed to the single wafer in batch wafer in the prior art, now provide
A kind of feedback control for aiming to solve the problem that between wafer each in wafer batch individual existing difference and leading to metal film offset issue
Method.
Specific technical solution is as follows:
A kind of feedback of making technology parameter is applied to chemical mechanical milling tech, wherein provides a chemistry
Mechanical grinding device, the chemical-mechanical grinding device carry out grinding processing procedure to the wafer being put into；
The automated procedures control equipment being connect with the chemical-mechanical grinding device；
The advanced technologies connecting with automated procedures control equipment control equipment；
The manufacture connecting with automated procedures control equipment executes equipment, and the manufacture executes equipment and puts to basis
Enter the wafer batch in the chemical-mechanical grinding device, generates the processing parameter of the wafer of corresponding batch and transmission
To the chemical-mechanical grinding device；
The feedback includes:
Step S1, untreated wafer to be ground is judged whether there is in current wafer batch；
If it is not, the wafer-process in current wafer batch is completed, exit；
Step S2, the first product information of the wafer to be ground of acquisition one of sequence and it is sent to automated procedures control
Equipment；
Step S3, first product information is sent to the advanced technologies and controlled by the described automated procedures control equipment
Equipment；
Step S4, the described advanced technologies control equipment is according to first product information and a normal abrasive rate processing
It obtains the milling time of the wafer to be ground and feeds back to the automated procedures control equipment；
Step S5, the described automated procedures control equipment generates a regulating command according to the milling time and is sent to institute
Chemical-mechanical grinding device is stated, the chemical-mechanical grinding device adjusts grinding for the wafer to be ground according to the regulating command
Time consuming；
Step S6, after the completion of the current grinding wafer to be ground, to the metal of the wafer after the completion of grinding
Film thickness is measured to obtain measuring value, and the measuring value is fed back to the advanced technologies and controls equipment；
Step S7, the described advanced technologies control equipment is handled according to the measuring value obtains grinding rate, by the processing
The grinding rate of acquisition is configured to return step S1 after the normal abrasive rate.
Preferably, after executing the step S7, if the wafer of current batch needs to reprocess, wafer is without exiting institute
It states manufacture and executes equipment, the automated procedures generate milling time according to the measuring value of wafer, and according to the grinding
Time generates the regulating command and is sent to the chemical-mechanical grinding device, then the manufacture executes equipment and generates corresponding batch
The making technology parameter of secondary wafer；
The manufacture execute equipment generate corresponding batch wafer making technology parameter method the following steps are included:
Step A1, obtain be put into the wafer of present lot in the chemical-mechanical grinding device the second product information it is concurrent
It send to the automated procedures and controls equipment；
Step A2, second product information is sent to the manufacture execution and set by the described automated procedures control equipment
Standby, the manufacture executes equipment and generates making technology corresponding with the wafer of present lot according to second product information
Parameter is simultaneously sent to the automated procedures control equipment；
Step A3, the making technology parameter is sent to the chemical mechanical grinding by the described automated procedures control equipment
Equipment is to execute grinding processing procedure to each of present lot wafer.
It preferably, include that the wafer is not grinding it in first product information of the wafer to be ground of acquisition
The measuring value of the preceding thickness of metal film.
Preferably, when the wafer to be ground be present lot wafer in first wafer when, the grinding rate then from
It is obtained in the preset processing parameter.
Preferably, the method for the processing acquisition grinding rate includes:
The advanced technologies control equipment according to including in first product information of the wafer to be ground
Wafer do not grind before the thickness of metal film measuring value, the measuring value of the thickness of metal film after milled processed with
And the milling time of the wafer to be ground, processing obtain the grinding rate of the wafer to be ground.
Preferably, the metal film of the wafer to be ground is copper film.
It preferably, further include marker in first product information, the marker is to indicate the crystalline substance to be ground
Whether circle is to grind for the first time；
When the wafer to be ground be it is non-grind for the first time when, advanced technologies control equipment controls the chemical machinery and grinds
Mill equipment carries out regrinding technique to the equipment to be ground.
Above-mentioned technical proposal have the following advantages that or the utility model has the advantages that can in effective solution grinding technics data feedback it is too late
When and between wafer each in wafer batch individual existing difference leads to metal film offset issue, to reach advanced technologies pair
The requirement of metal film grinding making technology.
Detailed description of the invention
With reference to appended attached drawing, more fully to describe the embodiment of the present invention.However, appended attached drawing be merely to illustrate and
It illustrates, and is not meant to limit the scope of the invention.
Fig. 1 is a kind of flow chart of the feedback embodiment of making technology parameter of the present invention；
Fig. 2 is that it is raw to execute equipment about manufacture in a kind of feedback embodiment of making technology parameter of the present invention
At the flow chart of the method for the making technology parameter of corresponding batch wafer.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, those of ordinary skill in the art without creative labor it is obtained it is all its
His embodiment, shall fall within the protection scope of the present invention.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
The present invention will be further explained below with reference to the attached drawings and specific examples, but not as the limitation of the invention.
It include a kind of feedback of making technology parameter in technical solution of the present invention.
A kind of feedback of making technology parameter is applied to chemical mechanical milling tech, wherein provides a chemistry
Mechanical grinding device, chemical-mechanical grinding device carry out grinding processing procedure to the wafer being put into；
The automated procedures control equipment being connect with chemical-mechanical grinding device；
The advanced technologies connecting with automated procedures control equipment control equipment；
The manufacture connecting with automated procedures control equipment executes equipment, and manufacture executes equipment and is put into chemical machine to basis
Wafer batch in tool milling apparatus, generation correspond to the processing parameter of the wafer of batch and are sent to chemical mechanical grinding and set
It is standby；
As shown in Figure 1, feedback includes:
Step S1, untreated wafer to be ground is judged whether there is in current wafer batch；
If it is not, the wafer-process in current wafer batch is completed, exit；
Step S2, the first product information of the wafer to be ground of acquisition one of sequence and be sent to automated procedures control set
It is standby；
Step S3, the first product information is sent to advanced technologies control equipment by automated procedures control equipment；
Step S4, advanced technologies control equipment is obtained according to the first product information and a normal abrasive rate processing wait grind
It grinds the milling time of wafer and feeds back to automated procedures control equipment；
Step S5, automated procedures control equipment generates a regulating command and is sent to chemical machinery and grinds according to milling time
Equipment is ground, chemical-mechanical grinding device adjusts the milling time of wafer to be ground according to regulating command；
Step S6, after the completion of current grinding wafer to be ground, to the thickness of metal film of the wafer after the completion of grinding into
Row measures to obtain measuring value, and measuring value is fed back to advanced technologies control equipment；
Step S7, advanced technologies control equipment is handled according to measuring value obtains grinding rate, the grinding speed that processing is obtained
Rate is configured to return step S1 after normal abrasive rate.
For in the prior art, between each batch wafer in existing imeliness problem and batch between each wafer by
Difference between individual leads to thickness of metal film existing offset issue after milling.
In the present invention, by the product information to each wafer feedback in batch wafer, and then according to a upper wafer
Grinding rate generates the milling time that grinding is executed to current wafer, to execute milled processed, Ke Yiyou to current wafer
Existing difference causes thickness of metal film to grind existing offset issue between wafer individual in the solution present lot of effect, gram
Having taken to be limited in the prior art existing for the method for the wafer feedback and adjustment that carry out as unit of batch can not solve
The problem of metal film deviation present in grinding between body.
It is brilliant if the wafer of current batch needs to reprocess after executing step S7 in a kind of preferably embodiment
Circle executes equipment without exiting manufacture, and automated procedures generate milling time according to the measuring value of wafer, and according to milling time
It generates regulating command and is sent to chemical-mechanical grinding device, then manufacture and execute the making technology that equipment generates corresponding batch wafer
Parameter；
As shown in Fig. 2, it includes following step that manufacture, which executes the method that equipment generates the making technology parameter of corresponding batch wafer,
It is rapid:
Step A1, acquisition is put into the second product information of the wafer of present lot in chemical-mechanical grinding device (CMP) simultaneously
It is sent to automated procedures control equipment (EAP)；
Step A2, the second product information is sent to manufacture and executes equipment (MES) by automated procedures control equipment (EAP),
Manufacture executes equipment and generates making technology parameter corresponding with the wafer of present lot according to the second product information and be sent to certainly
Dynamicization program control facility；
Step A3, automated procedures control equipment and making technology parameter are sent to chemical-mechanical grinding device to current
Each wafer in batch executes grinding processing procedure.
It include that wafer is not being ground in a kind of preferably embodiment, in the first product information of the wafer to be ground of acquisition
The measuring value of thickness of metal film before mill.
In a kind of preferably embodiment, when wafer to be ground is the first wafer in present lot wafer, grinding
Rate is then obtained from preset processing parameter.
In a kind of preferably embodiment, the method that processing obtains grinding rate includes:
Before advanced technologies control equipment is not ground according to the wafer for including in the first product information of wafer to be ground
The measuring value of thickness of metal film, the measuring value of the thickness of metal film after milled processed and the milling time of wafer to be ground,
Processing obtains the grinding rate of wafer to be ground.
In a kind of preferably embodiment, the metal film of wafer to be ground is copper film.
It further include marker in the first product information, marker is to indicate wait grind in a kind of preferably embodiment
Grind whether wafer is to grind for the first time；
When wafer to be ground be it is non-grind for the first time when, advanced technologies control equipment control chemical-mechanical grinding device is treated and is ground
Mill equipment carries out regrinding technique.
The foregoing is merely preferred embodiments of the present invention, are not intended to limit embodiments of the present invention and protection model
It encloses, to those skilled in the art, should can appreciate that all with made by description of the invention and diagramatic content
Equivalent replacement and obviously change obtained scheme, should all be included within the scope of the present invention.
Claims (7)
1. a kind of feedback of making technology parameter is applied to chemical mechanical milling tech, which is characterized in that provide one
Chemical-mechanical grinding device, the chemical-mechanical grinding device carry out grinding processing procedure to the wafer being put into；
The automated procedures control equipment being connect with the chemical-mechanical grinding device；
The advanced technologies connecting with automated procedures control equipment control equipment；
The manufacture connecting with automated procedures control equipment executes equipment, and the manufacture executes equipment and is put into institute to basis
The wafer batch in chemical-mechanical grinding device is stated, the processing parameter of the wafer of corresponding batch is generated and is sent to institute
State chemical-mechanical grinding device；
The feedback includes:
Step S1, untreated wafer to be ground is judged whether there is in current wafer batch；
If it is not, the wafer-process in current wafer batch is completed, exit；
Step S2, the first product information of the acquisition one of the sequence wafer to be ground and it is sent to automated procedures control
Equipment；
Step S3, first product information is sent to the advanced technologies control and set by the described automated procedures control equipment
It is standby；
Step S4, the described advanced technologies control equipment is obtained according to first product information and a normal abrasive rate processing
The milling time of the wafer to be ground simultaneously feeds back to the automated procedures control equipment；
Step S5, the described automated procedures control equipment generates a regulating command according to the milling time and is sent to describedization
Mechanical grinding device is learned, when the chemical-mechanical grinding device adjusts the grinding of the wafer to be ground according to the regulating command
Between；
Step S6, after the completion of the current grinding wafer to be ground, to the metal film thickness of the wafer after the completion of grinding
Degree is measured to obtain measuring value, and the measuring value is fed back to the advanced technologies and controls equipment；
Step S7, the described advanced technologies control equipment is handled according to the measuring value obtains grinding rate, and the processing is obtained
Grinding rate be configured to return step S1 after the normal abrasive rate.
2. feedback according to claim 1, which is characterized in that after executing the step S7, if current
The wafer of batch needs to reprocess, and wafer is without exiting manufacture execution equipment, and the automated procedures are according to the institute of wafer
It states measuring value and generates milling time, and generate the regulating command according to the milling time and be sent to the chemical machinery and grind
Equipment is ground, then the manufacture executes the making technology parameter that equipment generates corresponding batch wafer；
The manufacture execute equipment generate corresponding batch wafer making technology parameter method the following steps are included:
Step A1, it obtains and is put into the second product information of the wafer of present lot in the chemical-mechanical grinding device and is sent to
The automated procedures control equipment；
Step A2, second product information is sent to the manufacture and executes equipment, institute by the described automated procedures control equipment
It states manufacture and executes equipment according to second product information generation making technology parameter corresponding with the wafer of present lot
And it is sent to the automated procedures control equipment；
Step A3, the making technology parameter is sent to the chemical-mechanical grinding device by the described automated procedures control equipment
To execute grinding processing procedure to each of present lot wafer.
3. feedback according to claim 1, which is characterized in that described the of the wafer to be ground of acquisition
It include the measuring value of the thickness of metal film of the wafer before not grinding in one product information.
4. feedback according to claim 1, which is characterized in that when the wafer to be ground is that present lot is brilliant
When first wafer in circle, the grinding rate is then obtained from the preset processing parameter.
5. feedback according to claim 1, which is characterized in that processing obtains the method packet of the grinding rate
It includes:
The advanced technologies control equipment is according to the wafer for including in first product information of the wafer to be ground
The measuring value of the thickness of metal film before not grinding, the measuring value of the thickness of metal film after milled processed and institute
The milling time of wafer to be ground is stated, processing obtains the grinding rate of the wafer to be ground.
6. feedback according to claim 1, which is characterized in that the metal film of the wafer to be ground is
Copper film.
7. feedback according to claim 1, which is characterized in that further include mark in first product information
Position, the marker is to indicate whether the wafer to be ground is to grind for the first time；
When the wafer to be ground be it is non-grind for the first time when, advanced technologies control equipment controls the chemical mechanical grinding and sets
It is standby that regrinding technique is carried out to the equipment to be ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201810596414.3A CN108942639A (en) | 2018-06-11 | 2018-06-11 | A kind of feedback of making technology parameter |
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| CN201810596414.3A CN108942639A (en) | 2018-06-11 | 2018-06-11 | A kind of feedback of making technology parameter |
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Family
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| CN201810596414.3A Pending CN108942639A (en) | 2018-06-11 | 2018-06-11 | A kind of feedback of making technology parameter |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112233975A (en) * | 2020-09-04 | 2021-01-15 | 北京烁科精微电子装备有限公司 | Grinding time control method, device and equipment and readable storage medium |
| CN113070808A (en) * | 2021-04-27 | 2021-07-06 | 华虹半导体(无锡)有限公司 | Grinding control method of chemical mechanical grinding process |
| CN113524019A (en) * | 2021-07-27 | 2021-10-22 | 福建北电新材料科技有限公司 | Chemical mechanical polishing method |
| CN113561050A (en) * | 2021-07-22 | 2021-10-29 | 北京烁科精微电子装备有限公司 | Method, device and system for controlling wafer transmission time |
| CN113611625A (en) * | 2021-07-30 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | Method for monitoring tungsten residues on edge of wafer in tungsten CMP process |
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| CN113611625A (en) * | 2021-07-30 | 2021-11-05 | 上海华虹宏力半导体制造有限公司 | Method for monitoring tungsten residues on edge of wafer in tungsten CMP process |
| CN113611625B (en) * | 2021-07-30 | 2024-02-02 | 上海华虹宏力半导体制造有限公司 | Method for monitoring edge tungsten residue in tungsten CMP process |
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Application publication date: 20181207 |