WO2023188066A1 - Appareil de montage de composant électronique et procédé de montage de composant électronique - Google Patents

Appareil de montage de composant électronique et procédé de montage de composant électronique Download PDF

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Publication number
WO2023188066A1
WO2023188066A1 PCT/JP2022/015830 JP2022015830W WO2023188066A1 WO 2023188066 A1 WO2023188066 A1 WO 2023188066A1 JP 2022015830 W JP2022015830 W JP 2022015830W WO 2023188066 A1 WO2023188066 A1 WO 2023188066A1
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WO
WIPO (PCT)
Prior art keywords
cover
electronic component
purge gas
holding
holding tool
Prior art date
Application number
PCT/JP2022/015830
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English (en)
Japanese (ja)
Inventor
孝寛 清水
耕平 瀬山
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株式会社新川
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 株式会社新川 filed Critical 株式会社新川
Priority to PCT/JP2022/015830 priority Critical patent/WO2023188066A1/fr
Priority to TW112105219A priority patent/TW202339606A/zh
Publication of WO2023188066A1 publication Critical patent/WO2023188066A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K13/00—Apparatus or processes specially adapted for manufacturing or adjusting assemblages of electric components
    • H05K13/04—Mounting of components, e.g. of leadless components
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering

Definitions

  • the present invention relates to an electronic component mounting apparatus and an electronic component mounting method.
  • Patent Document 1 discloses that when bonding bumps formed on a chip to pads formed on a substrate, a purge gas is locally flowed at least toward the area around the bumps while keeping the gap between the chip and the substrate open. discloses a chip mounting method characterized by bonding bumps to pads in the purge gas atmosphere.
  • the present invention has been made in view of these circumstances, and an object of the present invention is to provide an electronic component mounting apparatus and an electronic component mounting method with improved gas purge efficiency.
  • An electronic component mounting apparatus includes a bonding head that holds an electronic component having a mounting surface and mounts it on a substrate, and the bonding head includes a holding tool having a holding area that holds the electronic component, and a holding tool that has a holding area that holds the electronic component; A cover that surrounds the periphery of the tool and is formed with an opening that opens on the side of the holding area, and a gas outlet that supplies purge gas to the inside of the cover.
  • a purge gas supply path is provided around the circumference.
  • a semi-enclosed space surrounding the electronic component is formed between the board and the cover.
  • purge gas is supplied to the semi-enclosed space, air remaining in the semi-enclosed space is discharged from the gap between the substrate and the cover, and the purge gas concentration in the semi-enclosed space increases.
  • purge gas is isotropically supplied from the periphery to the mounting surface of the electronic component via a purge gas supply path provided over the entire circumference of the holding area between the cover and the holding tool.
  • the cover may have a tip portion that protrudes beyond the holding area of the holding tool.
  • the airtightness of the semi-closed space formed between the substrate and the cover is improved, and the gas purge efficiency can be further improved.
  • the inner diameter of the tip of the cover may be smaller than the inner diameter of the periphery of the holding area of the cover.
  • the direction in which the purge gas flows can be directed toward the mounting surface, and the gas purge efficiency can be further improved.
  • the tip of the cover may be made of a flexible material.
  • the cover can be brought close to the board without avoiding the tip of the cover coming into contact with the board or the electronic components mounted on the board, the board and cover can be easily connected when joining the electronic components and the board. It is possible to improve the airtightness of the semi-enclosed space surrounding the electronic component formed therebetween. Therefore, it is possible to suppress the amount of purge gas flowing out from the semi-enclosed space after gas purge, and it is possible to suppress the flow rate of purge gas that is continuously supplied after gas purge.
  • a slit or a ventilation hole may be formed at the tip of the cover.
  • air remaining in the semi-enclosed space surrounding the electronic component formed between the substrate and the cover when the electronic component and the substrate are bonded can be exhausted through the slit or the ventilation hole.
  • the airtightness of the semi-enclosed space can be adjusted by the design of the slits or ventilation holes.
  • the cover may be configured to be movable relative to the holding tool in the axial direction of the cover.
  • the airtightness of the semi-enclosed space surrounding the electronic component formed between the board and the cover can be adjusted in accordance with the progress of gas purge. For example, at the beginning of the gas purge, the gap between the substrate and the cover can be increased to promote air discharge, thereby speeding up the progress of the gas purge. At the end of the gas purge, heat loss can be suppressed by reducing the gap between the substrate and the cover to suppress the outflow of the purge gas, and by reducing the flow rate of the purge gas. In addition, by starting the supply of purge gas with the cover advanced relative to the holding area of the holding tool before bringing the electronic parts into contact with the board, the purge gas concentration around the electronic parts can be reduced.
  • a semi-sealed space can be formed between the cover and the substrate in a high state, and the time required for gas purging can be shortened.
  • the position of the cover can be adjusted depending on the surface shape of the board and the mounting status of electronic components.
  • An electronic component mounting method is an electronic component mounting method in which an electronic component having a mounting surface is held by a bonding head and mounted on a board, wherein the bonding head is a holder that holds the electronic component.
  • An electronic component mounting method comprising: a holding tool having a holding area; a cover surrounding the holding tool and having an opening opening on the side of the holding area; and a gas outlet for supplying purge gas to the inside of the cover. is a purge gas supply path that is provided around the entire circumference of the holding area between the holding tool holding the electronic parts and the cover by holding the electronic parts with a holding tool and ejecting purge gas from the gas jet port. and mounting the electronic component held by the holding tool on the board while the purge gas is being supplied.
  • a semi-enclosed space surrounding the electronic component is formed between the board and the cover.
  • purge gas is supplied to the semi-enclosed space, air remaining in the semi-enclosed space is discharged from the gap between the substrate and the cover, and the purge gas concentration in the semi-enclosed space increases.
  • purge gas is isotropically supplied from the periphery to the mounting surface of the electronic component via a purge gas supply path provided over the entire circumference of the holding area between the cover and the holding tool.
  • FIG. 1 is a diagram schematically showing the configuration of an electronic component mounting apparatus according to a first embodiment.
  • FIG. 2 is a diagram schematically showing a cross-sectional configuration of the electronic component mounting apparatus shown in FIG. 1 taken along line II-II.
  • 1 is a flowchart schematically showing an electronic component mounting method using the electronic component mounting apparatus according to the first embodiment.
  • 4 is a diagram schematically showing the state of step S120 in FIG. 3.
  • FIG. 4 is a diagram schematically showing the state of step S130 in FIG. 3.
  • FIG. 4 is a diagram schematically showing the state of step S140 in FIG. 3.
  • FIG. 4 is a diagram schematically showing the state of step S150 in FIG. 3.
  • FIG. 7 is a diagram schematically showing the configuration of a bonding head according to a second embodiment.
  • FIG. 7 is a diagram schematically showing the configuration of a bonding head according to a third embodiment. It is a figure which shows roughly the structure of the bonding head based on 4th Embod
  • FIG. 1 is a diagram schematically showing the configuration of an electronic component mounting apparatus according to a first embodiment.
  • FIG. 2 is a diagram schematically showing a cross-sectional structure of the electronic component mounting apparatus shown in FIG. 1 taken along line II-II.
  • the electronic component mounting apparatus 1 is a flip chip bonder that inverts and mounts a semiconductor chip EC on a substrate S.
  • the semiconductor chip EC is an example of an electronic component, but is not limited thereto.
  • the electronic component mounting apparatus 1 is not limited to a flip chip bonder, but may be a die bonder or a surface mounting apparatus.
  • the electronic components mounted by the electronic component mounting apparatus 1 may be IC packages, semiconductor elements such as transistors and diodes, or passive elements such as resistors, capacitors, and inductors.
  • the solder that joins the substrate S and the semiconductor chip EC is provided, for example, on the bump electrodes B of the semiconductor chip EC.
  • Solder may be provided on the electrode pad PD of the substrate S, or may be provided on both the bump electrode B and the electrode pad PD.
  • the electronic component mounting apparatus 1 includes a head unit 100, a control section 10, a pickup unit 20, a transfer unit 30, and a mounting unit 40.
  • the head unit 100 includes a bonding head 110 and a head moving mechanism 150.
  • the bonding head 110 is configured to be able to pick up a semiconductor chip EC having bump electrodes B on its mounting surface.
  • the bonding head 110 includes a holding tool 111, a heating tool 113, a cooling tool 115, a cover C1, a gas outlet P1, and a lifting mechanism 119.
  • the holding tool 111 holds the semiconductor chip EC.
  • the holding tool 111 is, for example, a suction collet having suction holes 112.
  • the holding tool 111 has a holding area 111A that holds the semiconductor chip EC, and is configured to be able to pick up the semiconductor chip EC that is in contact with the holding area 111A.
  • the heating tool 113 is a heating mechanism that heats the holding tool 111, and is, for example, a ceramic heater.
  • the heating tool 113 is configured to specifically raise the temperature of the holding area 111A of the holding tool 111 and to heat the semiconductor chip EC held in the holding area 111A.
  • the heating tool 113 may be equipped with a temperature sensor such as a thermocouple or a resistance temperature detector.
  • the cooling tool 115 is a cooling mechanism that cools the holding tool 111, and is, for example, a cooling channel, a Peltier element, or the like.
  • the cooling tool 115 particularly lowers the temperature of the holding area 111A of the holding tool 111.
  • the cover C1 is provided in a cylindrical shape surrounding the holding tool 111. As shown in FIG. 2, when the holding area 111A of the holding tool 111 is viewed from above, a purge gas supply path R1 is formed between the cover C1 and the holding tool 111 over the entire circumference of the holding area 111A. For example, an isotropic gap is provided between the cover C1 and the holding tool 111.
  • the cover C1 has an opening that opens the holding area 111A side of the holding tool 111. That is, the cover C1 is open on the bump electrode B side of the semiconductor chip EC held by the holding tool 111. The side of the cover C1 opposite to the opening is closed.
  • the cover C1 may be provided with at least one of a slit and a vent for discharging gas.
  • the cover C1 has a tip C11 on the opening side.
  • the tip portion C11 protrudes beyond the holding area 111A of the holding tool 111.
  • the tip portion C11 surrounds, for example, the bump electrode B on the semiconductor chip EC held by the holding tool 111.
  • the bump electrodes B on the semiconductor chip EC held by the holding tool 111 may protrude beyond the tip C11.
  • the gas outlet P1 supplies purge gas GS to the inside of the cover C1.
  • the gas ejection port P1 ejects the purge gas GS toward the purge gas supply path R1.
  • an inert gas such as nitrogen gas or argon gas, a reducing gas, a substitution gas (for example, a gas that can substitute fluorine groups on the surface of the bump electrode B), or the like can be used.
  • the purge gas GS may be any gas that can purge a gas that forms an oxidizing atmosphere, such as air, and form a non-oxidizing atmosphere.
  • the elevating mechanism 119 is an elevating mechanism that raises and lowers the holding tool 111 along a direction (hereinafter referred to as the "vertical direction") perpendicular to the transfer surface of the transfer unit 30 or the mounting surface of the mounting unit 40, and is, for example, an electric cylinder. and actuators.
  • the lifting mechanism 119 raises and lowers the cover C1 together with the holding tool 111 in the vertical direction.
  • the relative position of the cover C1 with respect to the holding area 111A of the holding tool 111 is fixed.
  • the holding tool 111 and the cover C1 may be configured to be movable up and down independently of each other. That is, the relative position of the cover C1 with respect to the holding area 111A of the holding tool 111 may be configured to be changeable.
  • the head moving mechanism 150 is a moving mechanism that moves the head unit 100 along a direction parallel to the transfer surface of the transfer unit 30 or the mounting surface of the mounting unit 40 (hereinafter referred to as "horizontal direction").
  • a robot or robot manipulator is a moving mechanism that moves the head unit 100 along a direction parallel to the transfer surface of the transfer unit 30 or the mounting surface of the mounting unit 40 (hereinafter referred to as "horizontal direction").
  • the control unit 10 controls the lifting mechanism 119 and the head moving mechanism 150 in order to control the vertical and horizontal positions of the holding tool 111 of the bonding head 110. Further, the control unit 10 controls the suction hole 112 of the holding tool 111 to pick up or release the semiconductor chip EC. Further, the control unit 10 controls the heating tool 113 and the cooling tool 115 of the holding tool 111, and adjusts the temperature of the semiconductor chip EC via the holding area 111A. Further, the control unit 10 controls the gas jet port P1 of the holding tool 111, and starts supplying, stops supplying, and adjusts the supply amount of the purge gas GS.
  • control unit 10 causes the semiconductor chip EC to be picked up from the pickup unit 20 and conveyed from the pickup unit 20 to the transfer unit 30.
  • the control unit 10 immerses the bump electrodes B of the semiconductor chip EC in the flux FX stored in the transfer unit 30, and transports the semiconductor chip EC from the transfer unit 30 to the mounting unit 40.
  • the control unit 10 starts supplying the purge gas GS, brings the bump electrodes B of the semiconductor chip EC into contact with the electrode pads PD of the substrate S, and then heats the semiconductor chip EC and mounts it on the substrate S.
  • the control unit 10 may change the supply amount of the purge gas GS before and after bringing the bump electrode B into contact with the electrode pad PD. Specifically, the amount of purge gas GS supplied after bringing bump electrode B into contact with electrode pad PD may be lower than the amount of purge gas GS supplied before bringing bump electrode B into contact with electrode pad PD. Note that when the mounting of the semiconductor chip EC on the substrate S is completed, the control unit 10 moves the bonding head 110 to the pickup unit 20 while cooling the holding tool 111 to prepare for mounting the next semiconductor chip EC. Let it start.
  • the control unit 10 may acquire information regarding the operating status of at least one of the pickup unit 20, the transfer unit 30, and the mounting unit 40, and may control the head unit 100 based on the information. Furthermore, the control section 10 may control at least one of the pickup unit 20, the transfer unit 30, and the mounting unit 40 based on the operating status of the head unit 100.
  • the pickup unit 20 picks up the semiconductor chips EC from the wafer W. Specifically, the pickup unit 20 pushes up the semiconductor chip EC from the wafer W with the push-up mechanism 21, and picks up the pushed up semiconductor chip EC with the pickup head 22. The picked up semiconductor chip EC is reversed by the pickup head 22 and then delivered to the bonding head 110.
  • the pickup unit is not limited to the above, and may be a tray feeder that feeds electronic components such as semiconductor chips EC from a tray containing semiconductor chips EC. At this time, the pickup unit may further include a holding part that holds the tray, a conveyor that transports the tray, an orthogonal robot or a robot manipulator, and the like.
  • the pickup unit may be, for example, a tape feeder.
  • the transfer unit 30 includes a transfer stage 31 that stores flux FX. Flux FX is stored at a uniform depth in the immersion area 33 of the transfer stage 31.
  • the transfer unit 30 includes a flux pod that supplies the flux FX to the immersion area 33 , a squeegee that levels the surface of the flux FX in the immersion area 33 , a temperature adjustment mechanism that adjusts the temperature of the flux FX, and a flux FX pod that supplies the flux FX to the immersion area 33 . It may further include an image analysis device or the like that images the surface of the bump electrode B before or after the transfer process and analyzes the transfer status of the flux FX to the bump electrode B.
  • the semiconductor chip EC is mounted on the substrate S.
  • the mounting unit 40 includes a mounting stage 41 on which the substrate S is placed. Note that the mounting unit 40 may further include a temperature adjustment mechanism that adjusts the temperature of the substrate S to melt the solder, a conveyor that conveys the substrate S, an orthogonal robot, a robot manipulator, and the like.
  • FIG. 3 is a flowchart schematically showing an electronic component mounting method using the electronic component mounting apparatus according to the first embodiment.
  • FIG. 4 is a diagram schematically showing the state of step S120 in FIG. 3.
  • FIG. 5 is a diagram schematically showing the state of step S130 in FIG. 3.
  • FIG. 6 is a diagram schematically showing the state of step S140 in FIG. 3.
  • FIG. 7 is a diagram schematically showing the state of step S150 in FIG. 3.
  • it is the control section 10 that controls each component of the head unit 100.
  • the temperature of the bonding head 110 is controlled to a first temperature (S110).
  • the temperature of the bonding head 110 is the temperature of the holding tool 111 that is controlled using the heating tool 113 or the cooling tool 115, and is the set temperature when heating or cooling the semiconductor chip EC via the holding area 111A.
  • the first temperature is set lower than the melting point of the solder.
  • the first temperature may be set lower than the activation temperature of flux FX. From the viewpoint of shortening the time required for melting the solder in step S170, which will be described later, the first temperature is a temperature that is below the melting point of the solder and at which the flux FX stored in the transfer stage 31 does not vaporize or deteriorate in step S130, which will be described later.
  • the first temperature may be set higher than the activation temperature of flux FX.
  • the first temperature is desirably set at 100°C or higher and 250°C or lower, and more preferably set at 150°C or higher. As an example, the first temperature is about 200°C.
  • the semiconductor chip EC is picked up from the wafer W, inverted, and delivered to the bonding head (S120).
  • the push-up mechanism 21 pushes up the semiconductor chip EC from the stationary wafer W toward the pickup head 22.
  • the bump electrodes B of the semiconductor chip EC are facing upward.
  • the pickup head 22 holds the semiconductor chip EC and inverts it to change the vertical orientation of the semiconductor chip EC.
  • the bump electrodes B of the semiconductor chip EC face downward.
  • the head moving mechanism 150 is controlled to move the bonding head 110 in the horizontal direction to a position overlapping the semiconductor chip EC held by the pickup head 22 in the vertical direction.
  • the lifting mechanism 119 is controlled to lower the holding tool 111 and the cover C1 vertically downward to bring the holding area 111A into contact with the semiconductor chip EC.
  • the suction hole 112 is controlled to attract the semiconductor chip EC to the holding area 111A.
  • the lifting mechanism 119 is controlled to vertically lift the holding tool 111 and the cover C1 while holding the semiconductor chip EC.
  • flux FX is transferred to bump electrode B (S130).
  • the head moving mechanism 150 is controlled to move the bonding head 110 horizontally to a position overlapping the immersion area 33 in the vertical direction.
  • the lifting mechanism 119 is controlled to lower the holding tool 111 and the cover C1 vertically downward, and the bump electrodes B of the semiconductor chip EC are immersed in the flux FX.
  • the lifting mechanism 119 is controlled to lift the holding tool 111 and the cover C1 vertically upward.
  • purge gas GS is started (S140).
  • the head moving mechanism 150 is controlled to move the bonding head 110 in the horizontal direction to a position overlapping the mounting area of the substrate S in the vertical direction.
  • the purge gas GS ejected from the gas ejection port P1 fills the space inside the cover C1, and purges the oxidizing gas from the space through the purge gas supply path R1.
  • the excess amount of the purge gas GS is also discharged through the purge gas supply path R1, thereby suppressing the intrusion of oxidizing gas into the space inside the cover C1.
  • the supply of the purge gas GS may be started before or during the movement of the bonding head 110 to a position overlapping the mounting area of the substrate S in the vertical direction.
  • bump electrode B is brought into contact with electrode pad PD (S150).
  • the lifting mechanism 119 is controlled to lower the holding tool 111 and the cover C1 vertically downward, and the bump electrode B is brought into contact with the electrode pad PD.
  • a semi-enclosed space surrounding the semiconductor chip EC is formed between the substrate S and the cover C1.
  • the gas outlet P1 continues to supply the purge gas GS, and discharges the oxidizing gas remaining in the semi-closed space from the gap between the substrate S and the cover C1.
  • a non-oxidizing atmosphere made of the purge gas GS is formed as the atmosphere of the bump electrode B.
  • step S140 of starting the supply of the purge gas GS may be performed after step S150 of bringing the bump electrode B into contact with the electrode pad PD.
  • the temperature of the bonding head 110 is controlled to a second temperature (S150).
  • the second temperature is higher than the first temperature.
  • the second temperature is set higher than the melting point of the solder.
  • the solder is softened in a non-oxidizing atmosphere consisting of the purge gas GS.
  • the second temperature is appropriately set within a temperature range in which the solder does not deteriorate.
  • the second temperature is desirably set at 250°C or higher and 400°C or lower, and more preferably set at 350°C or lower. As an example, the second temperature is about 300°C.
  • the bonding head 110 is cooled down (S170). By lowering the bonding head 110 to a temperature lower than the melting point of the solder, the solder is cooled and solidified. Thereby, the semiconductor chip EC is soldered to the substrate S.
  • the semiconductor chip EC is released from the holding tool 111 (S180). First, air intake through the suction hole 112 is released, and the semiconductor chip EC is released from the holding area 111A. Next, the lifting mechanism 119 is controlled to lift the holding tool 111 and the cover C1 vertically upward.
  • step S110 the process returns to step S110 again, and the temperature of the bonding head 110 is controlled to the first temperature.
  • step S130 is performed again, flux FX is added to the immersion area 33 of the transfer stage 31, and the surface of the flux FX supplied to the immersion area 33 with a squeegee is leveled.
  • the bonding head 110 includes the holding tool 111 having the holding area 111A that holds the semiconductor chip EC, and the holding tool 111 that surrounds the holding tool 111 and has the holding area 111A.
  • a cover C1 is provided with an opening that opens on the side thereof, and a gas jet port P1 that supplies purge gas GS to the inside of the cover C1.
  • a purge gas supply path R1 is provided throughout.
  • a semi-enclosed space surrounding the semiconductor chip EC is formed between the substrate S and the cover C1.
  • the purge gas GS is isotropically supplied from the periphery to the mounting surface of the semiconductor chip EC via the purge gas supply path R1 provided between the cover C1 and the holding tool 111 over the entire circumference of the holding area 111A. be done.
  • the purge gas GS is supplied only from a specific direction to the mounting surface, it is possible to suppress the air caught in the purge gas GS from remaining around the mounting surface and improve the gas purge efficiency. . Therefore, the flow rate of the purge gas GS can be reduced, and heat loss caused by the purge gas GS taking away heat when the semiconductor chip EC and the substrate S are bonded can be suppressed.
  • the cover C1 has a tip portion C11 that protrudes beyond the holding area 111A of the holding tool 111.
  • the airtightness of the semi-closed space formed between the substrate S and the cover C1 is improved, and the gas purge efficiency can be further improved.
  • the electronic component mounting method using the electronic component mounting apparatus 1 includes holding the semiconductor chip EC by the holding tool 111 and ejecting the purge gas GS from the gas outlet P1.
  • the purge gas GS is supplied to the purge gas supply path R1 provided over the entire circumference of the holding area 111A between the tool 111 and the cover C1, and the semiconductor chip EC held by the holding tool 111 is supplied with the purge gas GS. and mounting it on the substrate S.
  • a semi-enclosed space surrounding the semiconductor chip EC is formed between the substrate S and the cover C1.
  • the purge gas GS is isotropically supplied from the periphery to the mounting surface of the semiconductor chip EC via the purge gas supply path R1 provided between the cover C1 and the holding tool 111 over the entire circumference of the holding area 111A. be done.
  • the purge gas GS is supplied only from a specific direction to the mounting surface, it is possible to suppress the air caught in the purge gas GS from remaining around the mounting surface and improve the gas purge efficiency. . Therefore, the flow rate of the purge gas GS can be reduced, and heat loss caused by the purge gas GS taking away heat when the semiconductor chip EC and the substrate S are bonded can be suppressed.
  • gas outlet P1 is provided vertically downward, it may be provided vertically upward, horizontally inwardly, or horizontally outwardly.
  • gas ejection ports P1 there are two gas ejection ports P1, but there may be one, or a plurality of three or more.
  • FIG. 8 is a diagram schematically showing the configuration of a bonding head according to the second embodiment.
  • the cover C2 according to the second embodiment is provided so that the horizontal dimension becomes smaller toward the tip, and the inner wall of the tip C21 has a tapered shape.
  • the inner diameter of the tip C21 of the cover C2 is smaller than the inner diameter of the periphery of the holding area 111A in the cover C2.
  • the direction in which the purge gas GS flows can be directed toward the bump electrode B, and the gas purge efficiency can be further improved.
  • the inner wall of the tip of the cover is not limited to a tapered shape as long as it is possible to direct the flow direction of the purge gas GS toward the bump electrode B.
  • the inner wall of the tip of the cover may have an inward protrusion, and the tip of the cover may have an L-shape or a T-shape.
  • FIG. 9 is a diagram schematically showing the configuration of a bonding head according to the third embodiment.
  • the tip C31 of the cover C3 according to the third embodiment is made of flexible rubber.
  • the tip C31 is configured to be deformable when it comes into contact with the substrate S or another semiconductor chip EC mounted on the substrate S.
  • the tip C31 is provided with a slit SL extending in the vertical direction.
  • the slit SL is used for discharging gas, and also makes it easy to deform the tip C31.
  • the tip C31 of the cover C3 is made of a flexible material.
  • a slit may be formed in the tip C31 of the cover C3 according to this embodiment.
  • air remaining in the semi-enclosed space surrounding the semiconductor chip EC, which is formed between the substrate S and the cover C3 when the semiconductor chip EC and the substrate S are bonded together, can be exhausted through the slit SL. Moreover, the airtightness of the semi-enclosed space can be adjusted by the design of the slit SL.
  • a ventilation hole may be formed at the tip of the cover instead of a slit.
  • the material forming the tip of the cover is not limited to rubber as long as it is a flexible material.
  • the tip of the cover may be provided with, for example, a sponge such as urethane foam, cloth, or the like.
  • FIG. 10 is a diagram schematically showing the configuration of a bonding head according to the fourth embodiment.
  • the bonding head 410 includes an elevating mechanism 419 that moves the holding tool 111 up and down along the vertical direction, and an elevating mechanism 429 that moves the cover C4 up and down along the vertical direction.
  • the holding tool 111 and the cover C4 can be moved up and down independently.
  • the cover C4 is configured to be movable relative to the holding tool 111 in the axial direction of the cover C4.
  • the airtightness of the semi-hermetic space surrounding the semiconductor chip EC formed between the substrate S and the cover C4 can be adjusted according to the progress of gas purge. For example, at the beginning of the gas purge, the gap between the substrate S and the cover C4 can be increased to promote air discharge, thereby speeding up the progress of the gas purge. At the end of the gas purge, heat loss can be suppressed by reducing the gap between the substrate S and the cover C4 to suppress outflow of the purge gas GS, and by reducing the flow rate of the purge gas GS.
  • the semiconductor chip A semi-sealed space can be formed between the cover C4 and the substrate S in a state where the purge gas GS concentration around the EC is high, and the time required for gas purging can be shortened.
  • the cover C4 With the stage of bringing the semiconductor chip EC into contact with the substrate S, by retracting the cover C4 with respect to the holding area of the holding tool 111, contact between the substrate S and the cover C4 can be suppressed.
  • the position of the cover C4 can be adjusted depending on the surface shape of the substrate S and the mounting situation of the semiconductor chip EC.

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)
  • Die Bonding (AREA)

Abstract

La présente invention concerne un appareil de montage de composant électronique (1) qui comprend une tête de liaison (110) qui maintient un composant électronique (EC) ayant une surface de montage et fixe le composant électronique sur une carte. La tête de liaison (110) comprend : un outil de maintien (111) qui présente une zone de maintien (111A) destinée à maintenir le composant électronique (EC) ; un couvercle (C1) qui entoure la périphérie de l'outil de maintien (111) et présente une partie d'ouverture formée pour ménager une ouverture dans le couvercle (C1) sur le côté plus proche de la zone de maintien (111A) ; et une buse de pulvérisation de gaz (P1) qui fournit un gaz de purge à l'intérieur du couvercle (C1). Un trajet d'alimentation en gaz de purge (R1) est réalisé autour de l'ensemble de la circonférence de la zone de maintien (111A) entre le couvercle (C1) et l'outil de maintien (111).
PCT/JP2022/015830 2022-03-30 2022-03-30 Appareil de montage de composant électronique et procédé de montage de composant électronique WO2023188066A1 (fr)

Priority Applications (2)

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PCT/JP2022/015830 WO2023188066A1 (fr) 2022-03-30 2022-03-30 Appareil de montage de composant électronique et procédé de montage de composant électronique
TW112105219A TW202339606A (zh) 2022-03-30 2023-02-14 電子零件安裝裝置及電子零件安裝方法

Applications Claiming Priority (1)

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PCT/JP2022/015830 WO2023188066A1 (fr) 2022-03-30 2022-03-30 Appareil de montage de composant électronique et procédé de montage de composant électronique

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WO (1) WO2023188066A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6349370A (ja) * 1986-08-18 1988-03-02 Nippon Steel Corp 水中スタツド溶接用シ−ルド部材
JPH09223868A (ja) * 1996-02-19 1997-08-26 Matsushita Electric Ind Co Ltd 部品のボンディング方法とこれに用いる装置、ディスペンサ
US6015083A (en) * 1995-12-29 2000-01-18 Microfab Technologies, Inc. Direct solder bumping of hard to solder substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6349370A (ja) * 1986-08-18 1988-03-02 Nippon Steel Corp 水中スタツド溶接用シ−ルド部材
US6015083A (en) * 1995-12-29 2000-01-18 Microfab Technologies, Inc. Direct solder bumping of hard to solder substrate
JPH09223868A (ja) * 1996-02-19 1997-08-26 Matsushita Electric Ind Co Ltd 部品のボンディング方法とこれに用いる装置、ディスペンサ

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TW202339606A (zh) 2023-10-01

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