WO2023152587A1 - 電子機器 - Google Patents

電子機器 Download PDF

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Publication number
WO2023152587A1
WO2023152587A1 PCT/IB2023/050700 IB2023050700W WO2023152587A1 WO 2023152587 A1 WO2023152587 A1 WO 2023152587A1 IB 2023050700 W IB2023050700 W IB 2023050700W WO 2023152587 A1 WO2023152587 A1 WO 2023152587A1
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WO
WIPO (PCT)
Prior art keywords
layer
light
display
display panel
emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/IB2023/050700
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
楠紘慈
塚本洋介
池田寿雄
初見亮
中村太紀
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to CN202380020564.9A priority Critical patent/CN118661127A/zh
Priority to JP2023579873A priority patent/JPWO2023152587A1/ja
Priority to KR1020247028360A priority patent/KR20240152855A/ko
Priority to US18/835,811 priority patent/US12366759B2/en
Publication of WO2023152587A1 publication Critical patent/WO2023152587A1/ja
Anticipated expiration legal-status Critical
Priority to US19/270,075 priority patent/US20250341729A1/en
Ceased legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/50—OLEDs integrated with light modulating elements, e.g. with electrochromic elements, photochromic elements or liquid crystal elements
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • G02B27/0172—Head mounted characterised by optical features
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/02—Viewing or reading apparatus
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/02—Viewing or reading apparatus
    • G02B27/022—Viewing apparatus
    • G02B27/024—Viewing apparatus comprising a light source, e.g. for viewing photographic slides, X-ray transparancies
    • G02B27/026—Viewing apparatus comprising a light source, e.g. for viewing photographic slides, X-ray transparancies and a display device, e.g. CRT, LCD, for adding markings or signs or to enhance the contrast of the viewed object
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/1006—Beam splitting or combining systems for splitting or combining different wavelengths
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/10—Beam splitting or combining systems
    • G02B27/14—Beam splitting or combining systems operating by reflection only
    • G02B27/144—Beam splitting or combining systems operating by reflection only using partially transparent surfaces without spectral selectivity
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N13/00—Stereoscopic video systems; Multi-view video systems; Details thereof
    • H04N13/30—Image reproducers
    • H04N13/332—Displays for viewing with the aid of special glasses or head-mounted displays [HMD]
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N5/00—Details of television systems
    • H04N5/64—Constructional details of receivers, e.g. cabinets or dust covers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/878—Arrangements for extracting light from the devices comprising reflective means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00—Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/01—Head-up displays
    • G02B27/017—Head mounted
    • G02B2027/0178—Eyeglass type

Definitions

  • One aspect of the present invention relates to an electronic device.
  • one embodiment of the present invention is not limited to the above technical field.
  • a technical field of one embodiment of the invention disclosed in this specification and the like relates to a product, a method, or a manufacturing method.
  • one aspect of the invention relates to a process, machine, manufacture, or composition of matter. Therefore, the technical field of one embodiment of the present invention disclosed in this specification more specifically includes semiconductor devices, display devices, liquid crystal display devices, light-emitting devices, lighting devices, power storage devices, storage devices, imaging devices, and the like. Methods of operation or methods of their manufacture may be mentioned as an example.
  • a semiconductor device in this specification and the like refers to all devices that can function by utilizing semiconductor characteristics.
  • a transistor and a semiconductor circuit are modes of a semiconductor device.
  • Storage devices, display devices, imaging devices, and electronic devices may include semiconductor devices.
  • Goggle-type or spectacle-type devices have been developed as electronic equipment for virtual reality (VR) or augmented reality (AR).
  • VR virtual reality
  • AR augmented reality
  • Display devices that can be applied to the display panel typically include a display device that includes a liquid crystal element, a display device that includes an organic EL (Electro Luminescence) element, a light emitting diode (LED), or the like. .
  • a display device that includes a liquid crystal element
  • a display device that includes an organic EL (Electro Luminescence) element
  • a light emitting diode LED
  • Patent Document 1 describes an example of a display device using an organic EL element.
  • VR-compatible devices such as goggle-type devices are required to eliminate the screen door effect and widen the viewing angle in order to give users a sense of immersion and presence.
  • the screen door effect refers to a problem in which a mesh pattern caused by boundaries between pixels is visible in the display.
  • the relatively large display panel is not easy to increase the pixel density, so the screen door effect is not solved.
  • a microdisplay with a high pixel density can be used for the display panel.
  • the screen door effect can be reduced while widening the viewing angle by configuring the display of the microdisplay to be enlarged by an optical system.
  • the optical system becomes complicated, the whole size increases, and the cost increases.
  • the microdisplay also has a problem of high power consumption for obtaining the required illuminance.
  • an object of one embodiment of the present invention is to provide an electronic device with which the viewing angle can be easily widened and the screen door effect is reduced. Another object is to provide an electronic device that can be manufactured at low cost. Another object is to provide an electronic device with high display quality. Another object is to provide an electronic device with low power consumption. Another object is to provide a novel electronic device.
  • One embodiment of the present invention relates to an electronic device that has high display quality and is compatible with VR and the like.
  • One embodiment of the present invention includes a first display panel, a second display panel, a third display panel, a first half mirror, a second half mirror, a first lens, and a second display panel.
  • a lens the first panel has a first display portion and a second display portion
  • the second display panel has a third display portion
  • a third The display panel has a fourth display section, and displays an image of the first display section transmitted through the first half mirror and an image of the third display section reflected by the first half mirror.
  • One of the left and right eyes visually recognizes the image of the second display portion transmitted through the second half mirror and the image of the fourth display portion reflected by the second half mirror.
  • the electronic device is viewed with the other of the left and right eyes through the second lens.
  • the image of the third display unit and the image of the fourth display unit are displayed in the area corresponding to the central visual field, and the images of the first display unit and the image of the second display unit are displayed in the area corresponding to the peripheral visual field. can be done.
  • Another aspect of the present invention includes a first display panel, a second display panel, a third display panel, a first half mirror, a second half mirror, and a first lens. and a second lens
  • the first panel has a first display section and a second display section, and the first lens faces the first display section the second lens is arranged at a position facing the second display unit;
  • the first half mirror is arranged between the first display unit and the first lens;
  • the half mirror of is arranged between the second display section and the second lens, and the second display panel reflects the image of the third display section by the first half mirror, and the image of the third display section is reflected by the first lens.
  • the third display panel is an electronic device arranged at a position where the image of the fourth display unit is reflected by the second half mirror and is incident on the second lens.
  • the first display panel can be a liquid crystal display device or an organic EL display device having circuits provided on a glass substrate.
  • the second display panel and the third display panel can be organic EL display devices having circuits provided on silicon substrates.
  • a display panel having a higher pixel density than the first display panel can be used for the second display panel and the third display panel.
  • the first display panel, the second display panel, and the third display panel perform black display when writing image data and when holding data, respectively. can perform image display according to signals supplied to each of the display panels at the same timing.
  • an electronic device in which the viewing angle is easily widened and the screen door effect is reduced.
  • an electronic device that can be manufactured at low cost can be provided.
  • an electronic device with high display quality can be provided.
  • an electronic device with low power consumption can be provided.
  • a novel electronic device can be provided.
  • FIG. 1 is a diagram for explaining a display device.
  • 2A to 2C are diagrams for explaining the display device.
  • 3A and 3B are diagrams for explaining the optical paths of the display device.
  • FIG. 3C is a diagram for explaining a composite image.
  • 4A to 4C are diagrams for explaining images to be combined.
  • 5A to 5D are diagrams for explaining the display panel.
  • 6A to 6C are diagrams for explaining the display panel.
  • FIG. 7 is a diagram for explaining an example of a visually recognized image.
  • 8A and 8B are diagrams for explaining image rewriting.
  • FIG. 9 is a diagram for explaining the timing of rewriting an image.
  • 10A to 10C are diagrams for explaining image rewriting.
  • FIG. 11A is a diagram for explaining the timing of rewriting an image.
  • 11B and 11C are diagrams illustrating pixel circuits.
  • 12A to 12C are diagrams for explaining image rewriting.
  • FIG. 13 is a timing chart explaining the operation of the pixel circuit.
  • 14A and 14B are diagrams illustrating a goggle-type electronic device.
  • 15A to 15C are diagrams illustrating configuration examples of the display panel.
  • 16A and 16B are diagrams for explaining a configuration example of a display panel.
  • 17A to 17F are diagrams illustrating configuration examples of pixels.
  • 18A and 18B are diagrams for explaining a configuration example of a display panel.
  • FIG. 19 is a diagram illustrating a configuration example of a display panel.
  • FIG. 20 is a diagram illustrating a configuration example of a display panel.
  • FIG. 21 is a diagram illustrating a configuration example of a display panel.
  • FIG. 22 is a diagram illustrating a configuration example of a display panel.
  • FIG. 23 is a diagram illustrating a configuration example of a display panel.
  • FIG. 24 is a diagram illustrating a configuration example of a display panel.
  • FIG. 25 is a diagram illustrating a configuration example of a display panel.
  • 26A and 26B are diagrams for explaining a configuration example of a display panel.
  • 27A to 27F are diagrams illustrating configuration examples of light-emitting devices.
  • 28A to 28C are diagrams illustrating configuration examples of light-emitting devices.
  • the element may be composed of a plurality of elements as long as there is no functional problem.
  • multiple transistors operating as switches may be connected in series or in parallel.
  • the capacitor may be divided and arranged at a plurality of positions.
  • one conductor may have multiple functions such as wiring, electrode, and terminal, and in this specification, multiple names may be used for the same element. Also, even if the circuit diagram shows that the elements are directly connected, the elements may actually be connected via one or more conductors. In this specification, such a configuration is also included in the category of direct connection.
  • One embodiment of the present invention is a VR-compatible electronic device in which images displayed on a low-pixel-density display panel and a high-pixel-density display panel are combined and viewed.
  • the electronic device has a first display panel with a relatively large screen size and low pixel density, and a second display panel and a third display panel with relatively small screen sizes and high pixel density.
  • pixel density represents the number of pixels per unit area or unit length.
  • a display panel can display a higher-definition image as the pixel density is higher.
  • the pixel density can be expressed, for example, in ppi (pixels per inch) as the number of pixels per inch (unit length).
  • ppi pixels per inch
  • the screen resolution represents the total number of pixels and is commonly referred to as 4K2K or 8K4K or the number of pixels in horizontal ⁇ vertical directions, and is a concept different from pixel density.
  • the human eye has high resolution for visual information entering the fovea and its vicinity (central visual field), but relatively low resolution for visual information entering outside the vicinity of the fovea (peripheral visual field). Therefore, if high-definition image information is placed in the central visual field, even if low-definition image information is placed in the peripheral visual field, the user is less likely to perceive the screen door effect.
  • the central visual field is populated with visual information from a relatively high pixel density second display panel or a third display panel
  • the peripheral visual field is populated with a relatively low pixel density first display. It is configured so that visual information is entered from the panel. With this configuration, the viewing angle can be easily widened and the screen door effect can be reduced, so that it is easy to give the user a sense of immersion and realism.
  • the first display panel has two display portions. By having two display units, one display panel can be used for each of the left and right eyes. Therefore, the number of display panels can be reduced, and the parts cost and power consumption can be reduced.
  • image display timing can be adjusted in the first display panel, the second display panel, and the third display panel, so that the electronic device can have high display quality.
  • FIG. 1 is a perspective view illustrating a display device that can be used for an electronic device of one embodiment of the present invention.
  • 2A shows a plan view (top view) of the display device
  • FIG. 2B shows a right side view
  • FIG. 2C shows a front view.
  • the display device 10 has a display panel 20 , a display panel 30 , a display panel 40 , a half mirror 51 , a half mirror 52 , a lens 61 and a lens 62 .
  • the user can visually recognize the image by bringing his or her eyes closer to the vicinity of the lenses 61 and 62 of the display device 10 .
  • the display panel 20 has a display section 21 and a display section 22 .
  • the display panel 20 is a display panel with a relatively large screen size and low pixel density corresponding to the peripheral vision, and the details will be described later.
  • the lens 61 can be arranged apart from the display panel 20 at a position facing the display section 21 .
  • the lens 62 can be arranged apart from the display panel 20 at a position facing the display section 22 .
  • a convex lens can be used for the lenses 61 and 62 .
  • FIG. 1 and FIGS. 2A to 2C show an example in which biconvex lenses are used as the lenses 61 and 62, the invention is not limited to this.
  • the lenses 61, 62 may consist of one or more plano-convex lenses.
  • the lenses 61 and 62 may be configured by combining a plurality of lenses selected from a biconvex lens, a plano-convex lens, a bi-concave lens, a plano-concave lens, a convex meniscus lens, and a concave meniscus lens.
  • lenses other than the lenses 61 and 62 may be provided.
  • the half mirror 51 can be arranged between the display section 21 and the lens 61 .
  • the half mirror 52 can be arranged between the display section 22 and the lens 62 .
  • An image displayed on the display unit 21 can pass through the half mirror 51 and enter the lens 61 .
  • the image displayed on the display unit 22 can pass through the half mirror 52 and enter the lens 62 .
  • the half mirrors 51 and 52 for example, optical glass having a high visible light transmittance is used as a base, and a surface provided with a metal film or a dielectric film can be used as a reflecting surface. Also, the transmittance and reflectance of the half mirrors 51 and 52 for visible light can be set to, for example, approximately 50%, respectively. In consideration of the brightness of each display panel, the half mirrors 51 and 52 are configured so that the transmittance is higher than the reflectance (transmittance>reflectance), or the reflectance is higher than the transmittance. (transmittance ⁇ reflectance).
  • the display panel 30 has a display section 31 .
  • the display panel 40 has a display section 41 .
  • the display panel 30 can be arranged at a position where an image displayed on the display section 31 is reflected by the reflecting surface 51 r of the half mirror 51 and enters the lens 61 .
  • each element In order to cause the image of the display section 31 to enter the lens 61 facing the display section 21, it is preferable to provide each element at a position that does not interfere with each other.
  • the angle between the reflecting surface 51r of the half mirror 51 and the display surface of the display unit 21 and the angle between the reflecting surface 51r of the half mirror 51 and the display surface of the display unit 31 are 35° or more and 55° or less, preferably Each element can be arranged so as to be 40° or more and 50°. Typically, it is preferable to arrange each element such that the angle is approximately 45°.
  • the display panel 40 can be arranged at a position where an image displayed on the display section 41 is reflected by the reflecting surface 52 r of the half mirror 52 and enters the lens 62 .
  • each element In order to cause the image of the display section 41 to enter the lens 62 facing the display section 22, it is preferable to provide each element at a position that does not interfere with each other.
  • the angle between the reflecting surface 52r of the half mirror 52 and the display surface of the display unit 22 and the angle between the reflecting surface 52r of the half mirror 52 and the display surface of the display unit 41 are 35° or more and 55° or less, preferably Each element can be arranged so as to be 40° or more and 50°. Typically, it is preferable to arrange each element such that the angle is approximately 45°.
  • FIG. 3A is a diagram showing part of an optical path when an image on the display section 22 of the display panel 20 is viewed.
  • FIG. 3B is a diagram showing part of the optical path when an image on the display section 41 of the display panel 40 is viewed.
  • FIGS. 3A and 3B Although images are displayed simultaneously on the display unit 22 and the display unit 41, they are shown separately in FIGS. 3A and 3B for clarity of illustration. Also, the synthesis of the image of the display section 21 of the display panel 20 and the image of the display section 31 of the display panel 30 is the same as the description of FIGS. 3A and 3B, and is omitted here.
  • the image on the display unit 22 is transmitted through the half mirror 52 and enters the lens 62 .
  • the image of the display unit 22 condensed by the lens 62 is incident on the eye 15 and visually recognized.
  • the image on the display unit 22 is also reflected by the half mirror 52, but is not shown here because it does not contribute to visual recognition.
  • the image on the display unit 41 is reflected by the half mirror 52 and enters the lens 62 . Then, the image of the display unit 41 condensed by the lens 62 enters the eye 15 and is visually recognized. The image on the display unit 41 is also transmitted through the half mirror 52, but is not shown here because it does not contribute to visual recognition.
  • FIG. 3C is a diagram schematically showing an image that is synthesized and viewed.
  • a high-definition image 41i displayed by the display unit 41 having a high pixel density is positioned in the area corresponding to the central visual field.
  • a low-definition image 22i displayed on the display unit 22 with a low pixel density is located in the outer peripheral visual field. Since the edge is not clear in the human visual field, the outer periphery of the combined image is indicated by a dashed line here.
  • the electronic device In order to always match the central visual field and the image 41i, it is preferable to provide the electronic device with a head tracking function that detects the position of the user's head and changes the image.
  • the head tracking function minimizes the movement of the eyeball, making it easier for the user's line of sight to focus on the area of the image 41i.
  • high-definition image information can be placed in the central visual field (the fovea and its vicinity of the human eye), and low-definition image information can be placed in the peripheral visual field (outside the vicinity of the fovea).
  • the screen door effect can be reduced.
  • FIGS. 4A to 4C examples of images to be synthesized are shown in FIGS. 4A to 4C.
  • An image 22i displayed on the display unit 22 an image 41i displayed on the display unit 41, and a visually recognized synthetic image are illustrated from the left. Note that the synthesis of the image of the display section 21 of the display panel 20 and the image of the display section 31 of the display panel 30 is the same as the description of FIGS. 4A to 4C, and is omitted here.
  • FIG. 4A is an example in which the illuminance of an area 22c overlapping an image 41i is set lower than that of the surroundings in an image 22i.
  • FIG. 4B is an example in which an area 22d in which no image is displayed is provided in an area overlapping the image 41i in the image 22i.
  • the illuminance of the image 22i and the image 41i can be made substantially the same, and controllability can be improved.
  • FIG. 4C is a combination of FIGS. 4A and 4B, showing an example in which a region 22d is provided in the center of the region 22c.
  • FIG. 5A is a diagram illustrating the display panel 20.
  • the display panel 20 has a display section 21 , a display section 22 , a gate driver 24 and a source driver 25 .
  • the gate driver 24 and the source driver 25 can be provided using a method of mounting an IC package such as TCP (Tape Carrier Package) or COF (Chip On Film), or a COG method (chip on glass). Alternatively, it may be monolithically formed on the same substrate as the pixel circuit.
  • TCP Transmission Carrier Package
  • COF Chip On Film
  • COG Chip on glass
  • the gate driver 24 is a monolithic circuit formed on the same substrate as the pixel circuit, and the source driver 25 is a COF type mounted via an FPC (flexible printed circuit) 26 .
  • FIG. 5A shows an example in which the gate drivers 24 are arranged on both sides of the display section, they may be arranged on one side.
  • the display unit 21 has a configuration in which pixels 21p are arranged in a matrix. Further, the display section 22 has a configuration in which pixels 22p are arranged in a matrix. Each of the pixels 21p and the pixels 22p is electrically connected to the source driver 25 via the wiring 20w. A demultiplexer may be provided between the source driver 25 and the wiring 20w.
  • the gate driver 24 has a drive section for the display section 21 and a drive section for the display section 22, which are electrically connected by a wiring 24w.
  • image data output from the source driver 25 is written in the pixels of the row selected by the gate driver 24 .
  • an image is written from the display section 22 closer to the source driver 25 and then written to the display section 21 .
  • the display panel 20 has two display portions, it operates as one display panel. Therefore, the number of drive circuits such as source drivers can be reduced compared to the case where two display panels are used, and the material cost and mounting cost can be reduced.
  • FIG. 5B is a modification of FIG. 5A, in which pixels 21p in a region 21n of the display portion 21 overlapping the display portion 31 and pixels 22p in a region 22n of the display portion 22 overlapping the display portion 41 are omitted. With this structure, unnecessary display due to crosstalk or the like can be prevented in the regions 21n and 22n, and display quality can be improved. Note that the configuration of FIG. 5B can also be said to be a configuration in which the image 22i shown in FIG. 4B can be displayed by hardware.
  • FIG. 5A and 5B show an example in which two display units are separated, one display unit may be divided into display unit 21 and display unit 22 as shown in FIG. 5C. At this time, a region 20d that displays black at all times while the display panel 20 is performing a display operation may be provided at the boundary between the display unit 21 and the display unit 22 so that display light does not enter each other. . Also, the configuration shown in FIG. 5B in which pixels are omitted can be applied to FIG. 5C.
  • a liquid crystal display device or an organic EL display device formed using a glass substrate can be applied.
  • a pixel circuit, a driver circuit, and the like can be formed using transistors using metal oxide, polycrystalline silicon, or the like as a semiconductor layer. Therefore, even a display panel with a relatively large screen size (for example, about 4 to 8 inches diagonal) can be formed at low cost.
  • a high-definition display is required to reduce the screen door effect in the central field of view. It also requires high speed operation to accommodate writing of image data during a short horizontal period.
  • a display panel formed using a glass substrate there is a limit to increasing the pixel density in consideration of the balance between the size of the display section and the operating speed.
  • the display panel formed using the glass substrate it is preferable to apply the display panel formed using the glass substrate to the peripheral vision where the screen door effect is less noticeable. Also, by using a display panel with a relatively large screen size, it becomes easy to widen the viewing angle without using a complicated optical system. It is an advantage that a display panel formed using an inexpensive glass substrate can be used as the display panel.
  • the display panel 20 preferably has an outer aspect ratio of the display surface of about 2:1 to 3:1.
  • the size of the display unit 21 and the display unit 22 together is preferably about 4 to 8 inches diagonally, more preferably about 5 to 6 inches.
  • the pixel density is preferably 100 ppi or more, more preferably 200 ppi or more, and even more preferably 300 ppi or more, which is smaller than the pixel density of the display panels 30 and 40 .
  • FIG. 5D is a diagram illustrating the display panel 30.
  • the display panel 30 has a display section 31 .
  • the display unit 31 has a configuration in which pixels 31p are arranged in a matrix.
  • the display section 31 has a higher pixel density than the display section 21 .
  • An FPC 36 is electrically connected to the display panel 30 , and image data, operation signals, and power can be supplied via the FPC 36 . Since the display panel 40 also has the same configuration as the display panel 30, the description thereof is omitted here.
  • a liquid crystal display device or an organic EL display device can be used for the display panel 30, but a self-luminous type that does not require a light source is preferable in that a circuit described later can be stacked.
  • the organic EL display device is used. An example using is described.
  • FIG. 6A is a block diagram illustrating the display panel 30.
  • the display panel 30 has a display portion 31 , a circuit 75 and a circuit 76 .
  • the display unit 31 has pixels 31p arranged in the column direction and the row direction.
  • a pixel 31p can have multiple sub-pixels 33 .
  • the sub-pixel 33 has a function of emitting display light.
  • sub-pixel the minimum unit in which an independent operation is performed in one "pixel" is defined as a “sub-pixel” for convenience. "Sub-pixel” may be replaced with “pixel”.
  • the sub-pixel 33 has a light-emitting device (also referred to as a light-emitting element) that emits visible light.
  • a light-emitting device also referred to as a light-emitting element
  • an EL element such as an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode).
  • the light-emitting substance of the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF) material. ), inorganic compounds (such as quantum dot materials), and the like.
  • LEDs such as micro LED (Light Emitting Diode), can also be used as a light emitting device.
  • Circuits 75 and 76 are drivers for driving sub-pixels 33 .
  • the circuit 75 can function as a source driver, and the circuit 76 can function as a gate driver.
  • a shift register circuit or the like can be used for the circuits 75 and 76, for example.
  • the circuit 75 and the circuit 76 may be provided in the layer 81, the display portion 31 may be provided in the layer 82, and the layers 81 and 82 may overlap each other. With such a structure, a display device with a narrow frame can be formed.
  • the display panel can operate at high speed with low power consumption.
  • the display section 31 can be partially driven. For example, partial rewriting of image data on the display unit 31 can be performed. Also, the display unit 31 can be partially operated at different operating frequencies.
  • circuits 75 and 76 shown in FIG. 6B are examples, and can be changed as appropriate. Also, part of the circuit 75 and the circuit 76 can be formed in the same layer as the display section 31 .
  • Layer 81 may also include circuits such as memory circuits, arithmetic circuits, and communication circuits.
  • the circuits 75 and 76 are formed of transistors (hereinafter referred to as Si transistors) having silicon in the channel formation region, and the pixel circuits included in the display portion 31 are provided in the layer 82.
  • Si transistors transistors
  • the pixel circuits included in the display portion 31 are provided in the layer 82.
  • An OS transistor can be formed using a thin film and can be stacked over a Si transistor.
  • a layer 83 provided with an OS transistor may be provided between the layers 81 and 82 as illustrated in FIG. 6C.
  • Part of the pixel circuit included in the display portion 31 can be provided in the layer 83 using an OS transistor.
  • part of the circuits 75 and 76 can be provided with OS transistors.
  • part of circuits such as memory circuits, arithmetic circuits, and communication circuits that can be provided in the layer 82 can be provided with OS transistors.
  • a Si transistor may be provided in the layer 83 .
  • the aspect ratio of the outer shape of the display surface of the display panel 30 and the display panel 40 is about 1:1 to 4:3.
  • the diagonal size of the display section 31 and the display section 41 is preferably about 0.3 to 1.5 inches, more preferably about 0.5 to 1.0 inches.
  • the pixel density is preferably 3000 ppi or more, more preferably 4000 ppi or more, still more preferably 5000 ppi or more, and can be 10000 ppi or less.
  • FIG. 7 is an example of a diagram showing a composite image of an image 21i and an image 31i viewed with one of the left and right eyes, and a composite image of an image 22i and an image 41i viewed with the other of the left and right eyes.
  • the central field of view (the flower portion) can be displayed with high definition images 31i and 41i, and the peripheral field of view can be displayed with low definition images 21i and 22i.
  • the user can feel a stereoscopic effect.
  • the user can obtain a sense of immersion and realism by visually recognizing such an image.
  • FIG. 8A illustrates an image 21i of the display section 21 and an image 31i of the display section 31, and an image 22i of the display section 22 and an image 41i of the display section 41 are superimposed.
  • the display panel 20 operates as one display panel even though it has two display units. Therefore, as indicated by the large arrow in FIG. 8A, rewriting of the image data can proceed in the direction from the image 22i to the image 21i. For example, the image 21i is rewritten after the rewriting of the image 22i is completed. Depending on the specifications of the display panel, the rewriting of the image data may proceed in the direction opposite to that in FIG. 8A, but in any case, the rewriting progresses in one direction.
  • each of the images 31i and 41i can progress rewriting of image data from the right side of the viewed image.
  • rewriting of the image data may proceed from the left side of the visually recognized image.
  • FIG. 8B the direction of rewriting of image data may be changed.
  • the rewriting direction of these image data corresponds to the specification of the display panel or the installation direction of the display panel.
  • the frame frequencies of the display panel 20 and the display panels 30 and 40 may be different or the same. For example, since the resolution of the human eye in the peripheral visual field is lower than that in the central visual field, even if the frame frequency of the display panel 20 is reduced, it is difficult for people to perceive the difference from when the frame frequency is high.
  • the frame frequency of display panel 20 can be made lower than the frame frequency of display panels 30 and 40, and the amount of data communication and power consumption can be reduced.
  • the driving frequencies may be different even if the frame frequencies are the same.
  • FIG. 9 shows a typical example of the timing of image data writing, image display, and black display in a line-sequential method corresponding to the 1st to n-th rows (n is an integer of 3 or more) of the display panel. It is a diagram. Here, black display contributes to the prevention of afterimages, and is also called black insertion. Note that black display may not be performed.
  • FIG. 9 shows that image data is sequentially written from the first row, and image display is immediately performed after the image data is written.
  • FIG. 10A to 10C are diagrams showing display examples. Assume that FIG. 10A shows an image of a certain frame (the upper half is black and the lower half is white), and the next frame switches to a vertically inverted image (FIG. 10C).
  • image data is written in the line-sequential method shown in FIG. assumed to be started at the same time. Also, the writing of image data proceeds in the direction shown in FIG. 8A.
  • FIG. 10B is a diagram showing an image at a point in time when rewriting of image data is in progress.
  • the image 22i is rewritten line by line (the line corresponds to the vertical direction in the figure) from the right side of the image 22i, and at the same time, the images 31i and 41i are also rewritten line by line from the right side.
  • a data retention period is provided between image data writing and image display, and images are displayed in all rows at the same time.
  • an organic EL display device is used for each display panel will be described as an example, but a display device using micro LEDs or a liquid crystal display device can also be used.
  • FIG. 11A shows an example of the timing of image data writing, data retention, image display, and black display in a line-sequential method corresponding to the 1st to n-th rows (n is an integer of 3 or more) of each display panel. It is a diagram.
  • the light-emitting device is turned off to display black.
  • the pixels in all the rows emit light all at once, and turn off all at once after a certain period of time.
  • the black display shown in FIG. 12B is performed without going through the image as shown in FIG. 10B. . Therefore, the user can easily obtain a sense of immersion without seeing partial rewriting of the image.
  • a pixel circuit that can turn off the light emitting device can be used.
  • FIG. 11B is a general pixel circuit used for driving an organic EL element, and has three transistors (transistors M1, M2, M3), one capacitive element C1, and a light emitting device OLED.
  • One of the source and drain of the transistor M1 is electrically connected to the gate of the transistor M2 and one electrode of the capacitor C1.
  • One of the source and drain of the transistor M2 is electrically connected to one of the source and drain of the transistor M3, the other electrode of the capacitive element C1, and one electrode of the light emitting device OLED.
  • the other of the source and the drain of transistor M1 is electrically connected to source line SL, and the gate is electrically connected to gate line GL1.
  • the other of the source and the drain of transistor M2 is electrically connected to anode power supply line Vano.
  • the other of the source and drain of the transistor M3 is electrically connected to the wiring V0, and the gate is electrically connected to the gate line GL2.
  • the other electrode of the light emitting device OLED is electrically connected to the cathode power supply line Vcat.
  • the source line SL can be electrically connected to the source driver.
  • the gate lines GL1 and GL2 can be electrically connected to gate drivers.
  • the anode power line Vano can be a high potential power line.
  • the cathode power supply line Vcat can be a low power supply potential line, and the wiring V0 can be supplied with a constant potential such as 0V, for example.
  • the basic operation of the pixel circuit shown in FIG. 11B is as follows. First, the transistor M1 and the transistor M3 are turned on. At this time, image data is supplied to the gate of the transistor M2. Further, the source of the transistor M2 is reset to the potential of the wiring V0. That is, image data can be written to the gate while the source potential of the transistor M2 is stable.
  • the capacitor C1 functions as a storage capacitor for the potential of the gate of the transistor M2.
  • the transistor M2 becomes conductive and current flows through the light emitting device OLED to emit light.
  • the power supply potential is controlled.
  • the potential of the anode power supply line Vano may be lowered to approximately the potential of the cathode power supply line Vcat during the image data writing period, the data retention period, and the extinguishing period.
  • the potential of the cathode power line Vcat may be raised to about the potential of the anode power line Vano.
  • the light emitting device OLED may be extinguished by writing image data for black display during the extinguishing period.
  • the potential difference between the source and the drain of the transistor M2 becomes extremely small, so that no current flows through the transistor M2 and light emission from the light emitting device OLED can be suppressed. Also, during the image display period, by returning the potential of the anode power line Vano or the potential of the cathode power line Vcat to the original potential, a current flows through the transistor M2 and the light emitting device OLED can emit light.
  • FIG. 11C shows a configuration in which a transistor M4 is added to the pixel circuit shown in FIG. 11B.
  • the transistor M4 functions as a switch for turning on or off the light emitting device OLED.
  • One of the source and drain of the transistor M4 is electrically connected to one of the source and drain of the transistor M2, one of the source and drain of the transistor M3, and the other electrode of the capacitor C1.
  • the other of the source or drain of transistor M4 is electrically connected to one electrode of the light emitting device OLED.
  • a gate of the transistor M4 is electrically connected to the gate line GL3.
  • the gate line GL3 can be electrically connected to a gate driver.
  • FIG. 13 shows signals supplied to gate lines GL1 to GL3 respectively connected to the pixels in the 1st to nth rows.
  • the numbers in parentheses following the symbols are row numbers.
  • the gate line GL1[1] indicates the gate line GL1 connected to the pixels in the first row.
  • the transistors M1 and M3 are rendered non-conductive.
  • the data retention period starts from here.
  • the light emitting device OLED does not emit light because the transistor M4 is non-conductive. That is, a black display is performed.
  • the same operation as that for the 1st row is sequentially performed to write and hold the image data. Note that the data retention period may not be provided in the n-th row.
  • the light emitting device OLED of each pixel can be caused to emit light by signals supplied at the same timing.
  • a light emission period of the light emitting device OLED corresponds to an image display period.
  • FIG. 14A and 14B are diagrams showing an example of a goggle-type device having the display device 10 shown in FIG.
  • a goggle-type device has the display device 10 in a housing 90 and is sometimes called VR goggles, VR headset, VR glasses, or the like.
  • the application is not limited, and it can be used for AR.
  • the display device 10 is incorporated in the housing 90 so that the surfaces of the lenses 61 and 62 are exposed inside.
  • the lens 61 is for the left eye and the lens 62 is for the right eye.
  • the input terminal and the output terminal may be provided on the housing 90 or the band 91 .
  • a video signal from a video output device or the like, or a cable for supplying electric power for charging a battery provided in the housing 90 can be connected to the input terminal.
  • As an output terminal for example, it functions as an audio output terminal, and earphones, headphones, or the like can be connected. Note that the audio output terminal does not need to be provided when the configuration is such that audio data can be output by wireless communication, or when audio is output from an external video output device.
  • a wireless communication module may be provided inside the housing 90 or the band 91 .
  • the wireless communication module performs wireless communication, downloads content to be viewed, and can be stored in the storage module. This allows users to view downloaded content offline whenever they like.
  • a line-of-sight sensor may be provided in the housing 90 .
  • display operation buttons such as power on, power off, sleep, volume adjustment, channel change, menu display, selection, decision, return, etc.
  • operation buttons such as video playback, stop, pause, fast forward, fast rewind Each operation can be performed by recognizing the operation button.
  • the screen door effect can be reduced, and the electronic device can provide a strong three-dimensional effect, a sense of immersion, and a strong sense of reality.
  • the electronic device can have low power consumption and high reliability.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • Display 2 In this embodiment, structural examples of a display panel that can be applied to an electronic device of one embodiment of the present invention will be described.
  • the display panels exemplified below can be applied to the display panel 20, the display panel 30, and the display panel 40 of the first embodiment.
  • a display panel included in an electronic device of one embodiment of the present invention can include a light-emitting device.
  • the display panel has two or more pixels with different emission colors.
  • the pixels each have a light emitting device.
  • Each light-emitting device has a pair of electrodes with an EL layer therebetween.
  • the light-emitting device is preferably an organic EL element (organic electroluminescence element).
  • Two or more light-emitting devices with different emission colors have EL layers each containing a different light-emitting material.
  • a full-color display panel can be realized by having three types of light-emitting devices that respectively emit red (R), green (G), and blue (B) light.
  • the layer profile may be blurred and the edge thickness may be reduced.
  • the thickness of the island-shaped light-emitting layer may vary depending on the location.
  • countermeasures have been taken to artificially increase the definition (also called pixel density) by adopting a special pixel arrangement method such as a pentile arrangement.
  • an island-shaped light-emitting layer means that the light-emitting layer is physically separated from an adjacent light-emitting layer.
  • an EL layer is processed into a fine pattern by photolithography without using a shadow mask such as a fine metal mask (FMM).
  • a shadow mask such as a fine metal mask (FMM).
  • FMM fine metal mask
  • a display panel having high definition and a large aperture ratio, which has been difficult to achieve, can be realized.
  • the EL layers can be separately formed, a display panel with extremely vivid, high contrast, and high display quality can be realized.
  • the EL layer may be processed into a fine pattern using both a metal mask and photolithography.
  • part or all of the EL layer can be physically separated. As a result, it is possible to suppress leakage current between the light emitting devices through a layer (also referred to as a common layer) commonly used between adjacent light emitting devices. As a result, crosstalk due to unintended light emission can be prevented, and a display panel with extremely high contrast can be realized. In particular, a display panel with high current efficiency at low luminance can be realized.
  • One embodiment of the present invention can also be a display panel in which a light-emitting device that emits white light and a color filter are combined.
  • light-emitting devices having the same structure can be applied to light-emitting devices provided in pixels (sub-pixels) that emit light of different colors, and all layers can be common layers. Further, part or all of each EL layer may be separated by a process using photolithography. As a result, leakage current through the common layer is suppressed, and a high-contrast display panel can be realized.
  • an insulating layer that covers at least the side surface of the island-shaped light-emitting layer.
  • the insulating layer may cover part of the top surface of the island-shaped EL layer.
  • a material having barrier properties against water and oxygen is preferably used for the insulating layer.
  • an inorganic insulating film that hardly diffuses water or oxygen can be used. Accordingly, deterioration of the EL layer can be suppressed, and a highly reliable display panel can be realized.
  • the common electrode or the common electrode and the common layer are formed so as to cover the concave portion, a phenomenon in which the common electrode is divided by a step at the end of the EL layer (also referred to as step disconnection) occurs. may insulate. Therefore, it is preferable to adopt a configuration in which a local step located between two adjacent light emitting devices is filled with a resin layer functioning as a planarization film (also called LFP: Local Filling Planarization).
  • the resin layer has a function as a planarizing film.
  • FIG. 15A shows a schematic top view of the display panel 100 of one embodiment of the present invention.
  • the display panel 100 has, on a substrate 101, a plurality of light emitting devices 110R that emit red, a plurality of light emitting devices 110G that emit green, and a plurality of light emitting devices 110B that emit blue.
  • the light emitting region of each light emitting device is labeled with R, G, and B. As shown in FIG.
  • the light emitting device 110R, the light emitting device 110G, and the light emitting device 110B are each arranged in a matrix.
  • FIG. 15A shows a so-called stripe arrangement in which light emitting devices of the same color are arranged in one direction.
  • the arrangement method of the light emitting devices is not limited to this, and an arrangement method such as an S-stripe arrangement, a delta arrangement, a Bayer arrangement, or a zigzag arrangement may be applied, or a pentile arrangement, a diamond arrangement, or the like may be used.
  • the light emitting device 110R, the light emitting device 110G, and the light emitting device 110B for example, an OLED (Organic Light Emitting Diode) or a QLED (Quantum-dot Light Emitting Diode) is preferably used.
  • the light-emitting substance of the EL element include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescence material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF ) materials).
  • a light-emitting substance included in an EL element not only an organic compound but also an inorganic compound (such as a quantum dot material) can be used.
  • connection electrode 111C electrically connected to the common electrode 113.
  • FIG. 111 C of connection electrodes are given the electric potential (for example, anode electric potential or cathode electric potential) for supplying to the common electrode 113.
  • FIG. The connection electrodes 111C are provided outside the display area where the light emitting devices 110R and the like are arranged.
  • connection electrodes can be provided along the outer periphery of a display area.
  • it may be provided along one side of the periphery of the display area, or may be provided over two or more sides of the periphery of the display area. That is, when the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 111C can be strip-shaped (rectangular), L-shaped, U-shaped (square bracket-shaped), square, or the like. .
  • FIG. 15B and 15C are schematic cross-sectional views corresponding to dashed-dotted lines A1-A2 and dashed-dotted lines A3-A4 in FIG. 15A, respectively.
  • FIG. 15B shows a schematic cross-sectional view of light-emitting device 110R, light-emitting device 110G, and light-emitting device 110B
  • FIG. 15C shows a schematic cross-sectional view of connection portion 140 where connection electrode 111C and common electrode 113 are connected. ing.
  • the light emitting device 110R has a pixel electrode 111R, an organic layer 112R, a common layer 114 and a common electrode 113.
  • the light emitting device 110G has a pixel electrode 111G, an organic layer 112G, a common layer 114 and a common electrode 113.
  • the light emitting device 110B has a pixel electrode 111B, an organic layer 112B, a common layer 114 and a common electrode 113.
  • FIG. Common layer 114 and common electrode 113 are provided in common for light emitting device 110R, light emitting device 110G, and light emitting device 110B.
  • the organic layer 112R of the light-emitting device 110R has at least a light-emitting organic compound that emits red light.
  • the organic layer 112G included in the light-emitting device 110G has at least a light-emitting organic compound that emits green light.
  • the organic layer 112B included in the light-emitting device 110B has at least a light-emitting organic compound that emits blue light.
  • Each of the organic layer 112R, the organic layer 112G, and the organic layer 112B can also be called an EL layer and has at least a layer containing a light-emitting substance (light-emitting layer).
  • the light emitting device 110 when describing matters common to the light emitting device 110R, the light emitting device 110G, and the light emitting device 110B, the light emitting device 110 may be referred to. Similarly, when describing common items for structural elements such as the organic layer 112R, the organic layer 112G, and the organic layer 112B, which are distinguished by letters, the symbols omitting the letters may be used. be.
  • Organic layer 112 and common layer 114 can each independently comprise one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.
  • the organic layer 112 may have a layered structure of a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer from the pixel electrode 111 side
  • the common layer 114 may have an electron injection layer.
  • a pixel electrode 111R, a pixel electrode 111G, and a pixel electrode 111B are provided for each light emitting device.
  • the common electrode 113 and the common layer 114 are provided as a continuous layer common to each light emitting device.
  • a conductive film having a property of transmitting visible light is used for one of the pixel electrodes and the common electrode 113, and a conductive film having a reflective property is used for the other.
  • a protective layer 121 is provided on the common electrode 113 to cover the light emitting device 110R, the light emitting device 110G, and the light emitting device 110B.
  • the protective layer 121 has a function of preventing impurities such as water from diffusing into each light-emitting device from above.
  • the end of the pixel electrode 111 preferably has a tapered shape.
  • the organic layer 112 provided along the edge of the pixel electrode 111 can also have a tapered shape.
  • the coverage of the organic layer 112 provided over the end portion of the pixel electrode 111 can be improved.
  • the side surface of the pixel electrode 111 is tapered because foreign matter (eg, dust or particles) in the manufacturing process can be easily removed by cleaning or the like.
  • a tapered shape refers to a shape in which at least a part of the side surface of the structure is inclined with respect to the substrate surface.
  • the organic layer 112 is processed into an island shape using photolithography. Therefore, the organic layer 112 has a shape in which the angle formed by the top surface and the side surface is close to 90 degrees at the end.
  • an organic film formed using FMM (Fine Metal Mask) or the like tends to gradually decrease in thickness closer to the edge. Since it is formed, it becomes a shape in which it is difficult to distinguish between the upper surface and the side surface.
  • An insulating layer 125, a resin layer 126 and a layer 128 are provided between two adjacent light emitting devices.
  • the side surfaces of the organic layers 112 are provided to face each other with the resin layer 126 interposed therebetween.
  • the resin layer 126 is positioned between two adjacent light emitting devices, and is provided so as to fill the ends of each organic layer 112 and the area between the two organic layers 112 .
  • the resin layer 126 has a smooth convex upper surface, and the common layer 114 and the common electrode 113 are provided to cover the upper surface of the resin layer 126 .
  • the resin layer 126 functions as a planarizing film that fills in the steps located between the two adjacent light emitting devices.
  • a phenomenon in which the common electrode 113 is divided by a step at the end of the organic layer 112 (also referred to as step disconnection) occurs, and the common electrode on the organic layer 112 is prevented from being insulated. be able to.
  • the resin layer 126 can also be called LFP (Local Filling Planarization).
  • an insulating layer containing an organic material can be preferably used.
  • acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimideamide resin, silicone resin, siloxane resin, benzocyclobutene-based resin, phenolic resin, and precursors of these resins are applied as the resin layer 126. can do.
  • an organic material such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinylpyrrolidone, polyethylene glycol, polyglycerin, pullulan, water-soluble cellulose, or alcohol-soluble polyamide resin may be used.
  • a photosensitive resin can be used as the resin layer 126 .
  • a photoresist may be used as the photosensitive resin.
  • a positive material or a negative material can be used for the photosensitive resin.
  • the resin layer 126 may contain a material that absorbs visible light.
  • the resin layer 126 itself may be made of a material that absorbs visible light, or the resin layer 126 may contain a pigment that absorbs visible light.
  • a resin that transmits red, blue, or green light and can be used as a color filter that absorbs other light, or a resin that contains carbon black as a pigment and functions as a black matrix, or the like. can be used.
  • the insulating layer 125 is provided in contact with the side surface of the organic layer 112 . Also, the insulating layer 125 is provided to cover the upper end portion of the organic layer 112 . A part of the insulating layer 125 is provided in contact with the upper surface of the substrate 101 .
  • the insulating layer 125 is positioned between the resin layer 126 and the organic layer 112 and functions as a protective film to prevent the resin layer 126 from contacting the organic layer 112 .
  • the organic layer 112 may be dissolved by an organic solvent or the like used when forming the resin layer 126 . Therefore, by providing the insulating layer 125 between the organic layer 112 and the resin layer 126, the side surface of the organic layer 112 can be protected.
  • the insulating layer 125 can be an insulating layer containing an inorganic material.
  • an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, or a nitride oxide insulating film can be used, for example.
  • the insulating layer 125 may have a single-layer structure or a laminated structure.
  • the oxide insulating film includes a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, and an oxide film.
  • a hafnium film, a tantalum oxide film, and the like are included.
  • the nitride insulating film include a silicon nitride film and an aluminum nitride film.
  • As the oxynitride insulating film a silicon oxynitride film, an aluminum oxynitride film, or the like can be given.
  • nitride oxide insulating film a silicon nitride oxide film, an aluminum nitride oxide film, or the like can be given.
  • a metal oxide film such as a hafnium oxide film, or an inorganic insulating film such as a silicon oxide film to the insulating layer 125, pinholes are reduced and the EL layer can be protected.
  • a superior insulating layer 125 can be formed.
  • oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • nitride oxide refers to a material whose composition contains more nitrogen than oxygen. point to the material.
  • silicon oxynitride refers to a material whose composition contains more oxygen than nitrogen
  • silicon nitride oxide refers to a material whose composition contains more nitrogen than oxygen. indicates
  • a sputtering method, a CVD method, a PLD method, an ALD method, or the like can be used to form the insulating layer 125 .
  • the insulating layer 125 is preferably formed by an ALD method with good coverage.
  • a reflective film for example, a metal film containing one or more selected from silver, palladium, copper, titanium, and aluminum
  • a reflective film is provided between the insulating layer 125 and the resin layer 126 so that A configuration may be adopted in which emitted light is reflected by the reflecting film.
  • the light extraction efficiency can be improved.
  • the layer 128 is part of a protective layer (also referred to as a mask layer or a sacrificial layer) for protecting the organic layer 112 when the organic layer 112 is etched.
  • a protective layer also referred to as a mask layer or a sacrificial layer
  • any of the materials that can be used for the insulating layer 125 can be used.
  • an aluminum oxide film, a metal oxide film such as a hafnium oxide film, or an inorganic insulating film such as a silicon oxide film formed by an ALD method has few pinholes, it has an excellent function of protecting the EL layer. It can be suitably used for
  • the protective layer 121 can have, for example, a single-layer structure or a laminated structure including at least an inorganic insulating film.
  • inorganic insulating films include oxide films and nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films.
  • a semiconductor material or a conductive material such as indium gallium oxide, indium zinc oxide, indium tin oxide, or indium gallium zinc oxide may be used for the protective layer 121 .
  • a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 121 .
  • a structure in which an organic insulating film is sandwiched between a pair of inorganic insulating films is preferable.
  • the organic insulating film functions as a planarizing film.
  • the upper surface of the organic insulating film can be flattened, so that the coverage of the inorganic insulating film thereon can be improved, and the barrier property can be enhanced.
  • the upper surface of the protective layer 121 is flat, when a structure (for example, a color filter, an electrode of a touch sensor, or a lens array) is provided above the protective layer 121, an uneven shape due to the structure below may be formed. This is preferable because it can reduce the impact.
  • a structure for example, a color filter, an electrode of a touch sensor, or a lens array
  • FIG. 15C shows a connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected.
  • connection portion 140 an opening is provided in insulating layer 125 and resin layer 126 above connection electrode 111C.
  • the connection electrode 111C and the common electrode 113 are electrically connected through the opening.
  • FIG. 15C shows the connection portion 140 where the connection electrode 111C and the common electrode 113 are electrically connected. good.
  • the common layer 114 is located at the connection portion 140 because the electrical resistivity of the material used for the common layer 114 is sufficiently low and the thickness can be made thin. Often times there are no problems. As a result, the common electrode 113 and the common layer 114 can be formed using the same shielding mask, so the manufacturing cost can be reduced.
  • Configuration example 2 A display panel having a configuration partially different from that of Configuration Example 1 will be described below. It should be noted that the parts common to the above configuration example 1 may be referred to and the description thereof may be omitted.
  • FIG. 16A shows a schematic cross-sectional view of the display panel 100a.
  • the display panel 100a differs from the display panel 100 mainly in that the structure of the light-emitting device is different and that the display panel 100a has a colored layer.
  • the display panel 100a has a light emitting device 110W that provides white light.
  • the light emitting device 110W has a pixel electrode 111, an organic layer 112W, a common layer 114 and a common electrode 113.
  • the organic layer 112W exhibits white light emission.
  • the organic layer 112W can be configured to contain two or more kinds of light-emitting materials whose emission colors are complementary.
  • the organic layer 112W may include a luminescent organic compound that emits red light, a luminescent organic compound that emits green light, and a luminescent organic compound that emits blue light. can.
  • a structure including a light-emitting organic compound that emits blue light and a light-emitting organic compound that emits yellow light may be employed.
  • Each organic layer 112W is separated between two adjacent light emitting devices 110W. As a result, leakage current flowing between adjacent light emitting devices 110W via the organic layer 112W can be suppressed, and crosstalk caused by the leakage current can be suppressed. Therefore, a display panel with high contrast and high color reproducibility can be realized.
  • An insulating layer 122 functioning as a planarization film is provided over the protective layer 121, and a colored layer 116R, a colored layer 116G, and a colored layer 116B are provided over the insulating layer 122.
  • FIG. 1 An insulating layer 122 functioning as a planarization film is provided over the protective layer 121, and a colored layer 116R, a colored layer 116G, and a colored layer 116B are provided over the insulating layer 122.
  • the insulating layer 122 an organic resin film or an inorganic insulating film having a planarized top surface can be used.
  • the insulating layer 122 forms a surface on which the colored layer 116R, the colored layer 116G, and the colored layer 116B are formed. Color purity can be improved. Note that if the thickness of the colored layer 116R or the like is non-uniform, the amount of light absorbed varies depending on the location of the colored layer 116R, which may reduce the color purity.
  • FIG. 16B shows a schematic cross-sectional view of the display panel 100b.
  • the light emitting device 110R has a pixel electrode 111, a conductive layer 115R, an organic layer 112W, and a common electrode 113.
  • the light emitting device 110G has a pixel electrode 111, a conductive layer 115G, an organic layer 112W, and a common electrode 113.
  • the light emitting device 110B has a pixel electrode 111, a conductive layer 115B, an organic layer 112W, and a common electrode 113.
  • Each of the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B has translucency and functions as an optical adjustment layer.
  • a microresonator (microcavity) structure is realized by using a film that reflects visible light for the pixel electrode 111 and using a film that reflects and transmits visible light for the common electrode 113. be able to.
  • the thicknesses of the conductive layer 115R, the conductive layer 115G, and the conductive layer 115B so as to obtain the optimum optical path length, even when the organic layer 112 that emits white light is used, From the light-emitting device 110R, the light-emitting device 110G, and the light-emitting device 110B, light with different wavelengths can be obtained.
  • the colored layers 116R, 116G, and 116B are provided on the optical paths of the light emitting device 110R, the light emitting device 110G, and the light emitting device 110B, respectively, so that light with high color purity can be obtained.
  • an insulating layer 123 is provided to cover the end portions of the pixel electrode 111 and the optical adjustment layer 115 .
  • the insulating layer 123 preferably has tapered ends.
  • the organic layer 112W and the common electrode 113 are each provided in common to each light-emitting device as a continuous film. Such a structure is preferable because the manufacturing process of the display panel can be greatly simplified.
  • the pixel electrode 111 preferably has a nearly vertical shape at its end.
  • a steep slope can be formed on the surface of the insulating layer 123, and a thin portion can be formed in a part of the organic layer 112W covering this portion, or a part of the organic layer 112W can be formed. can be divided. Therefore, it is possible to suppress leakage current through the organic layer 112W generated between adjacent light emitting devices without processing the organic layer 112W using a photolithography method or the like.
  • FIG. 15A A pixel layout different from that in FIG. 15A will be mainly described below. There is no particular limitation on the arrangement of the light-emitting devices (sub-pixels), and various methods can be applied.
  • top surface shapes of sub-pixels include triangles, quadrilaterals (including rectangles and squares), polygons such as pentagons, shapes with rounded corners, ellipses, and circles.
  • the top surface shape of the sub-pixel corresponds to the top surface shape of the light emitting region of the light emitting device.
  • the S-stripe arrangement is applied to the pixel 150 shown in FIG. 17A.
  • the pixel 150 shown in FIG. 17A is composed of three sub-pixels of light emitting devices 110a, 110b, 110c.
  • light emitting device 110a may be a blue light emitting device
  • light emitting device 110b may be a red light emitting device
  • light emitting device 110c may be a green light emitting device.
  • the pixel 150 shown in FIG. 17B includes a light emitting device 110a having a substantially trapezoidal or substantially triangular top shape with rounded corners, a light emitting device 110b having a substantially trapezoidal or substantially triangular top shape with rounded corners, and a substantially square or substantially rectangular shape with rounded corners. and a light emitting device 110c having a substantially hexagonal top shape.
  • the light emitting device 110a has a larger light emitting area than the light emitting device 110b.
  • the shape and size of each light emitting device can be determined independently. For example, more reliable light emitting devices can be made smaller in size.
  • light emitting device 110a may be a green light emitting device
  • light emitting device 110b may be a red light emitting device
  • light emitting device 110c may be a blue light emitting device.
  • FIG. 17C shows an example in which pixels 124a having light emitting devices 110a and 110b and pixels 124b having light emitting devices 110b and 110c are alternately arranged.
  • light emitting device 110a may be a red light emitting device
  • light emitting device 110b may be a green light emitting device
  • light emitting device 110c may be a blue light emitting device.
  • Pixel 124a has two light emitting devices (light emitting devices 110a, 110b) in the top row (first row) and one light emitting device (light emitting device 110c) in the bottom row (second row).
  • Pixel 124b has one light emitting device (light emitting device 110c) in the top row (first row) and two light emitting devices (light emitting devices 110a and 110b) in the bottom row (second row).
  • light emitting device 110a may be a red light emitting device
  • light emitting device 110b may be a green light emitting device
  • light emitting device 110c may be a blue light emitting device.
  • FIG. 17D is an example in which each light emitting device has a substantially rectangular top shape with rounded corners
  • FIG. 17E is an example in which each light emitting device has a circular top shape.
  • FIG. 17F is an example in which light emitting devices of each color are arranged in a zigzag pattern. Specifically, when viewed from above, the positions of the upper sides of two light emitting devices (for example, light emitting device 110a and light emitting device 110b, or light emitting device 110b and light emitting device 110c) aligned in the column direction are displaced.
  • light emitting device 110a may be a red light emitting device
  • light emitting device 110b may be a green light emitting device
  • light emitting device 110c may be a blue light emitting device.
  • the top surface shape of the light emitting device may be polygonal with rounded corners, elliptical, circular, or the like.
  • the EL layer is processed into an island shape using a resist mask.
  • the resist film formed on the EL layer needs to be cured at a temperature lower than the heat resistance temperature of the EL layer. Therefore, curing of the resist film may be insufficient depending on the heat resistance temperature of the EL layer material and the curing temperature of the resist material.
  • a resist film that is insufficiently hardened may take a shape away from the desired shape during processing.
  • the top surface shape of the EL layer may be a polygon with rounded corners, an ellipse, or a circle. For example, when a resist mask having a square top surface is formed, a resist mask having a circular top surface is formed, and the EL layer may have a circular top surface.
  • a technique for correcting the mask pattern in advance so that the design pattern and the transfer pattern match.
  • OPC Optical Proximity Correction
  • a pattern for correction is added to a corner portion of a figure on a mask pattern.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • Embodiment 3 In this embodiment, another configuration example of a display panel that can be applied to display panel 30 and display panel 40 described in Embodiment 1 will be described.
  • the display panel of the present embodiment is a high-definition display panel, and is particularly used for the display unit of VR devices such as head-mounted displays and wearable devices such as glasses-type AR devices that can be worn on the head. is suitable.
  • Display module A perspective view of the display module 280 is shown in FIG. 18A.
  • the display module 280 has a display panel 200A and an FPC 290 .
  • the display panel included in the display module 280 is not limited to the display panel 200A, and may be any one of the display panels 200B to 200F described later.
  • Display module 280 has a substrate 291 and a substrate 292 .
  • the display module 280 has a display section 281 .
  • the display unit 281 is an area for displaying images.
  • FIG. 18B shows a perspective view schematically showing the configuration on the substrate 291 side.
  • a circuit section 282 , a pixel circuit section 283 on the circuit section 282 , and a pixel section 284 on the pixel circuit section 283 are stacked on the substrate 291 .
  • a terminal portion 285 for connecting to the FPC 290 is provided on a portion of the substrate 291 that does not overlap with the pixel portion 284 .
  • the terminal portion 285 and the circuit portion 282 are electrically connected by a wiring portion 286 composed of a plurality of wirings.
  • the pixel section 284 has a plurality of periodically arranged pixels 284a. An enlarged view of one pixel 284a is shown on the right side of FIG. 18B. Pixel 284a has a light emitting device 110R that emits red light, a light emitting device 110G that emits green light, and a light emitting device 110B that emits blue light.
  • the pixel circuit section 283 has a plurality of pixel circuits 283a arranged periodically.
  • One pixel circuit 283a is a circuit that controls light emission of three light emitting devices included in one pixel 284a.
  • One pixel circuit 283a may be provided with three circuits for controlling light emission of one light-emitting device.
  • the pixel circuit 283a can have at least one selection transistor, one current control transistor (driving transistor), and a capacitive element for each light emitting device. At this time, a gate signal is inputted to the gate of the selection transistor, and a source signal is inputted to the source thereof. This realizes an active matrix display panel.
  • the circuit section 282 has a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 .
  • a circuit that drives each pixel circuit 283 a of the pixel circuit section 283 For example, it is preferable to have one or both of a gate line driver circuit and a source line driver circuit.
  • at least one of an arithmetic circuit, a memory circuit, a power supply circuit, and the like may be provided.
  • the transistor provided in the circuit portion 282 may form part of the pixel circuit 283a. That is, the pixel circuit 283a may be configured with the transistor included in the pixel circuit portion 283 and the transistor included in the circuit portion 282.
  • the FPC 290 functions as wiring for externally supplying a video signal, a power supply potential, and the like to the circuit section 282 . Also, an IC may be mounted on the FPC 290 .
  • the aperture ratio (effective display area ratio) of the display portion 281 is can be very high.
  • the aperture ratio of the display section 281 can be 40% or more and less than 100%, preferably 50% or more and 95% or less, more preferably 60% or more and 95% or less.
  • the pixels 284a can be arranged at an extremely high density, and the definition of the display portion 281 can be extremely high.
  • the pixels 284a may be arranged with a resolution of 2000 ppi or more, preferably 3000 ppi or more, more preferably 5000 ppi or more, and still more preferably 6000 ppi or more, and 20000 ppi or less, or 30000 ppi or less. preferable.
  • a display module 280 Since such a display module 280 has extremely high definition, it can be suitably used for equipment for VR such as a head-mounted display, or equipment for glasses-type AR. For example, even in the case of a configuration in which the display portion of the display module 280 is viewed through a lens, the display module 280 has an extremely high-definition display portion 281, so pixels cannot be viewed even if the display portion is enlarged with the lens. , a highly immersive display can be performed. Moreover, the display module 280 is not limited to this, and can be suitably used for electronic equipment having a relatively small display unit. For example, it can be suitably used for a display part of a wearable electronic device such as a wristwatch.
  • Display panel 200A A display panel 200A shown in FIG.
  • Substrate 301 corresponds to substrate 291 in FIGS. 18A and 18B.
  • a transistor 310 has a channel formation region in the substrate 301 .
  • the substrate 301 for example, a semiconductor substrate such as a single crystal silicon substrate can be used.
  • Transistor 310 includes a portion of substrate 301 , conductive layer 311 , low resistance region 312 , insulating layer 313 and insulating layer 314 .
  • the conductive layer 311 functions as a gate electrode.
  • An insulating layer 313 is located between the substrate 301 and the conductive layer 311 and functions as a gate insulating layer.
  • the low-resistance region 312 is a region in which the substrate 301 is doped with impurities and functions as either a source or a drain.
  • the insulating layer 314 is provided to cover the side surface of the conductive layer 311 .
  • a device isolation layer 315 is provided between two adjacent transistors 310 so as to be embedded in the substrate 301 .
  • An insulating layer 261 is provided to cover the transistor 310 and a capacitor 240 is provided over the insulating layer 261 .
  • the capacitor 240 has a conductive layer 241, a conductive layer 245, and an insulating layer 243 positioned therebetween.
  • the conductive layer 241 functions as one electrode of the capacitor 240
  • the conductive layer 245 functions as the other electrode of the capacitor 240
  • the insulating layer 243 functions as the dielectric of the capacitor 240 .
  • the conductive layer 241 is provided over the insulating layer 261 and embedded in the insulating layer 254 .
  • Conductive layer 241 is electrically connected to one of the source or drain of transistor 310 by plug 271 embedded in insulating layer 261 .
  • An insulating layer 243 is provided over the conductive layer 241 .
  • the conductive layer 245 is provided in a region overlapping with the conductive layer 241 with the insulating layer 243 provided therebetween.
  • An insulating layer 255a is provided to cover the capacitor 240, an insulating layer 255b is provided over the insulating layer 255a, and an insulating layer 255c is provided over the insulating layer 255b.
  • An inorganic insulating film can be preferably used for each of the insulating layer 255a, the insulating layer 255b, and the insulating layer 255c.
  • a silicon oxide film is preferably used for the insulating layers 255a and 255c
  • a silicon nitride film is preferably used for the insulating layer 255b.
  • the insulating layer 255b can function as an etching protection film.
  • an example in which the insulating layer 255c is partly etched to form a recess is shown; however, the insulating layer 255c does not have to be provided with the recess.
  • Light emitting device 110R, light emitting device 110G, and light emitting device 110B are provided on insulating layer 255c.
  • Embodiment 1 can be referred to for the configurations of the light emitting device 110R, the light emitting device 110G, and the light emitting device 110B.
  • the light-emitting device is separately manufactured for each emission color, so the change in chromaticity is small between low-luminance light emission and high-luminance light emission.
  • the organic layers 112R, 112G, and 112B are separated from each other, crosstalk between adjacent sub-pixels can be suppressed even in a high-definition display panel. Therefore, a display panel with high definition and high display quality can be realized.
  • An insulating layer 125, a resin layer 126, and a layer 128 are provided in regions between adjacent light emitting devices.
  • the pixel electrode 111R, the pixel electrode 111G, and the pixel electrode 111B of the light-emitting device are composed of the insulating layer 255a, the insulating layer 255b, and the plug 256 embedded in the insulating layer 255c, the conductive layer 241 embedded in the insulating layer 254, and the , is electrically connected to one of the source or drain of the transistor 310 by a plug 271 embedded in the insulating layer 261 .
  • the height of the upper surface of the insulating layer 255c and the height of the upper surface of the plug 256 match or substantially match.
  • Various conductive materials can be used for the plug.
  • a protective layer 121 is provided over the light emitting devices 110R, 110G, and 110B.
  • a substrate 170 is bonded onto the protective layer 121 with an adhesive layer 171 .
  • No insulating layer is provided between two adjacent pixel electrodes 111 to cover the edge of the upper surface of the pixel electrode 111 . Therefore, the interval between adjacent light emitting devices can be made very narrow. Therefore, a high-definition or high-resolution display panel can be obtained.
  • a display panel 200B shown in FIG. 20 has a structure in which a transistor 310A and a transistor 310B each having a channel formed in a semiconductor substrate are stacked.
  • the description of the same parts as those of the previously described display panel may be omitted.
  • the display panel 200B has a structure in which a substrate 301B provided with a transistor 310B, a capacitor 240, and a light emitting device and a substrate 301A provided with a transistor 310A are bonded together.
  • an insulating layer 345 is provided on the lower surface of the substrate 301B, and an insulating layer 346 is provided on the insulating layer 261 provided on the substrate 301A.
  • the insulating layers 345 and 346 are insulating layers that function as protective layers, and can suppress diffusion of impurities into the substrates 301B and 301A.
  • an inorganic insulating film that can be used for the protective layer 121 or the insulating layer 332 can be used.
  • Substrate 301B is provided with a plug 343 penetrating through substrate 301B and insulating layer 345 .
  • an insulating layer 344 functioning as a protective layer to cover the side surface of the plug 343 .
  • the substrate 301B is provided with a conductive layer 342 under the insulating layer 345 .
  • the conductive layer 342 is embedded in the insulating layer 335, and the lower surfaces of the conductive layer 342 and the insulating layer 335 are planarized. Also, the conductive layer 342 is electrically connected to the plug 343 .
  • the conductive layer 341 is provided on the insulating layer 346 on the substrate 301A.
  • the conductive layer 341 is embedded in the insulating layer 336, and the top surfaces of the conductive layer 341 and the insulating layer 336 are planarized.
  • the same conductive material is preferably used for the conductive layers 341 and 342 .
  • a metal film containing an element selected from Al, Cr, Cu, Ta, Ti, Mo, and W, or a metal nitride film (titanium nitride film, molybdenum nitride film, tungsten nitride film) containing the above elements as components etc. can be used.
  • a Cu—Cu (copper-copper) direct bonding technique (a technique for achieving electrical continuity by connecting Cu (copper) pads) can be applied.
  • a display panel 200 ⁇ /b>C shown in FIG. 21 has a configuration in which a conductive layer 341 and a conductive layer 342 are bonded via bumps 347 .
  • the conductive layers 341 and 342 can be electrically connected.
  • the bumps 347 can be formed using a conductive material containing, for example, gold (Au), nickel (Ni), indium (In), tin (Sn), or the like. Also, for example, solder may be used as the bumps 347 . Further, an adhesive layer 348 may be provided between the insulating layer 345 and the insulating layer 346 . Further, when the bump 347 is provided, the insulating layer 335 and the insulating layer 336 may not be provided.
  • Display panel 200D A display panel 200D shown in FIG. 22 is mainly different from the display panel 200A in that the configuration of transistors is different.
  • the transistor 320 is a transistor (OS transistor) in which a metal oxide (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • OS transistor a transistor in which a metal oxide (also referred to as an oxide semiconductor) is applied to a semiconductor layer in which a channel is formed.
  • the transistor 320 has a semiconductor layer 321 , an insulating layer 323 , a conductive layer 324 , a pair of conductive layers 325 , an insulating layer 326 , and a conductive layer 327 .
  • Substrate 331 corresponds to substrate 291 in FIGS. 18A and 18B.
  • An insulating layer 332 is provided over the substrate 331 .
  • the insulating layer 332 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing from the substrate 331 into the transistor 320 and oxygen from the semiconductor layer 321 toward the insulating layer 332 side.
  • a film into which hydrogen or oxygen is less likely to diffuse than a silicon oxide film such as an aluminum oxide film, a hafnium oxide film, or a silicon nitride film, can be used.
  • a conductive layer 327 is provided over the insulating layer 332 and an insulating layer 326 is provided to cover the conductive layer 327 .
  • the conductive layer 327 functions as a first gate electrode of the transistor 320, and part of the insulating layer 326 functions as a first gate insulating layer.
  • An oxide insulating film such as a silicon oxide film is preferably used for at least a portion of the insulating layer 326 that is in contact with the semiconductor layer 321 .
  • the upper surface of the insulating layer 326 is preferably planarized.
  • the semiconductor layer 321 is provided over the insulating layer 326 .
  • the semiconductor layer 321 preferably includes a metal oxide (also referred to as an oxide semiconductor) film exhibiting semiconductor characteristics.
  • a pair of conductive layers 325 is provided on and in contact with the semiconductor layer 321 and functions as a source electrode and a drain electrode.
  • An insulating layer 328 is provided to cover the top and side surfaces of the pair of conductive layers 325 , the side surface of the semiconductor layer 321 , and the like, and the insulating layer 264 is provided over the insulating layer 328 .
  • the insulating layer 328 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the semiconductor layer 321 from the insulating layer 264 or the like and oxygen from leaving the semiconductor layer 321 .
  • an insulating film similar to the insulating layer 332 can be used as the insulating layer 328.
  • An opening reaching the semiconductor layer 321 is provided in the insulating layer 328 and the insulating layer 264 .
  • An insulating layer 323 in contact with the upper surface of the semiconductor layer 321 and a conductive layer 324 are embedded in the opening.
  • the conductive layer 324 functions as a second gate electrode, and the insulating layer 323 functions as a second gate insulating layer.
  • the top surface of the conductive layer 324, the top surface of the insulating layer 323, and the top surface of the insulating layer 264 are planarized so that their heights are the same or substantially the same, and an insulating layer 329 and an insulating layer 265 are provided to cover them. ing.
  • the insulating layers 264 and 265 function as interlayer insulating layers.
  • the insulating layer 329 functions as a barrier layer that prevents impurities such as water or hydrogen from diffusing into the transistor 320 from the insulating layer 265 or the like.
  • an insulating film similar to the insulating layers 328 and 332 can be used.
  • a plug 274 electrically connected to one of the pair of conductive layers 325 is provided so as to be embedded in the insulating layers 265 , 329 and 264 .
  • the plug 274 includes a conductive layer 274a covering the side surfaces of the openings of the insulating layers 265, the insulating layers 329, the insulating layers 264, and the insulating layers 328 and part of the upper surface of the conductive layer 325, and the conductive layer 274a. It is preferable to have a conductive layer 274b in contact with the top surface. At this time, a conductive material into which hydrogen and oxygen are difficult to diffuse is preferably used for the conductive layer 274a.
  • the structure of the transistor included in the display panel of this embodiment there is no particular limitation on the structure of the transistor included in the display panel of this embodiment.
  • a planar transistor, a staggered transistor, an inverted staggered transistor, or the like can be used.
  • the transistor structure may be either a top-gate type or a bottom-gate type.
  • gates may be provided above and below a semiconductor layer in which a channel is formed.
  • a structure in which a semiconductor layer in which a channel is formed is sandwiched between two gates is applied to the transistor 320 .
  • a transistor may be driven by connecting two gates and applying the same signal to them.
  • the threshold voltage of the transistor may be controlled by applying a potential for controlling the threshold voltage to one of the two gates and applying a potential for driving to the other.
  • the crystallinity of the semiconductor material used for the semiconductor layer of the transistor is not particularly limited, either.
  • a semiconductor having a crystalline region in the semiconductor) may be used.
  • a single crystal semiconductor or a crystalline semiconductor is preferably used because deterioration in transistor characteristics can be suppressed.
  • the bandgap of the metal oxide used for the semiconductor layer of the transistor is preferably 2 eV or more, more preferably 2.5 eV or more.
  • the metal oxide preferably comprises at least indium or zinc, more preferably indium and zinc.
  • metal oxides include indium and M (where M is gallium, aluminum, yttrium, tin, silicon, boron, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium). , hafnium, tantalum, tungsten, magnesium, and cobalt) and zinc.
  • the semiconductor layer of the transistor may comprise silicon.
  • silicon examples include amorphous silicon and crystalline silicon (low-temperature polysilicon, monocrystalline silicon, etc.).
  • Metal oxides that can be used in the semiconductor layer include, for example, indium oxide, gallium oxide, and zinc oxide. Also, the metal oxide preferably contains two or three elements selected from indium, the element M, and zinc. Element M includes gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, and magnesium. One or more selected from In particular, the element M is preferably one or more selected from aluminum, gallium, yttrium, and tin.
  • an oxide containing indium, gallium, and zinc is preferably used as the metal oxide used for the semiconductor layer.
  • an oxide containing indium, tin, and zinc also referred to as ITZO (registered trademark)
  • ITZO oxide containing indium, gallium, tin, and zinc
  • oxides containing indium, gallium, tin, and zinc are preferably used.
  • an oxide containing indium, aluminum, and zinc also referred to as IAZO
  • an oxide containing indium, aluminum, gallium, and zinc is preferably used.
  • the atomic ratio of In in the In-M-Zn oxide is preferably equal to or higher than the atomic ratio of M.
  • the semiconductor layer may have two or more metal oxide layers with different compositions.
  • gallium or aluminum it is particularly preferable to use gallium or aluminum as the element M.
  • a stacked structure of one selected from indium oxide, indium gallium oxide, and IGZO and one selected from IAZO, IAGZO, and ITZO (registered trademark) is used.
  • crystalline oxide semiconductors examples include CAAC (c-axis-aligned crystalline)-OS, nc (nanocrystalline)-OS, and the like.
  • OS transistors have much higher field-effect mobility than transistors using amorphous silicon.
  • an OS transistor has extremely low source-drain leakage current (hereinafter also referred to as an off-state current) in an off state, and can retain charge accumulated in a capacitor connected in series with the transistor for a long time. is possible. Further, by using the OS transistor, power consumption of the display panel can be reduced.
  • the amount of current flowing through the light emitting device it is necessary to increase the amount of current flowing through the light emitting device.
  • the OS transistor when the transistor operates in the saturation region, the OS transistor has a smaller change in the source-drain current with respect to the change in the gate-source voltage than the Si transistor. Therefore, by applying an OS transistor as a drive transistor included in a pixel circuit, the current flowing between the source and the drain can be finely determined according to the change in the voltage between the gate and the source. can be controlled. Therefore, it is possible to increase the gradation in the pixel circuit.
  • the OS transistor flows a more stable current (saturation current) than the Si transistor even when the source-drain voltage gradually increases. be able to. Therefore, by using the OS transistor as the driving transistor, a stable current can be supplied to the light-emitting device even when the current-voltage characteristics of the EL device vary, for example. That is, when the OS transistor operates in the saturation region, even if the source-drain voltage is increased, the source-drain current hardly changes, so that the light emission luminance of the light-emitting device can be stabilized.
  • an OS transistor as a driving transistor included in a pixel circuit, it is possible to suppress black floating, increase emission luminance, provide multiple gradations, and suppress variations in light emitting devices. can be planned.
  • a display panel 200E illustrated in FIG. 23 has a structure in which a transistor 320A and a transistor 320B each including an oxide semiconductor as a semiconductor in which a channel is formed are stacked.
  • the display panel 200D can be referred to for the configuration of the transistor 320A, the transistor 320B, and their peripherals.
  • transistors each including an oxide semiconductor are stacked here, the structure is not limited to this.
  • a structure in which three or more transistors are stacked may be employed.
  • a display panel 200F illustrated in FIG. 24 has a structure in which a transistor 310 in which a channel is formed over a substrate 301 and a transistor 320 including a metal oxide in a semiconductor layer in which the channel is formed are stacked.
  • An insulating layer 261 is provided to cover the transistor 310 , and a conductive layer 251 is provided over the insulating layer 261 .
  • An insulating layer 262 is provided to cover the conductive layer 251 , and the conductive layer 252 is provided over the insulating layer 262 .
  • the conductive layers 251 and 252 each function as wiring.
  • An insulating layer 263 and an insulating layer 332 are provided to cover the conductive layer 252 , and the transistor 320 is provided over the insulating layer 332 .
  • An insulating layer 265 is provided to cover the transistor 320 and a capacitor 240 is provided over the insulating layer 265 . Capacitor 240 and transistor 320 are electrically connected by plug 274 .
  • the transistor 320 can be used as a transistor forming a pixel circuit. Further, the transistor 310 can be used as a transistor forming a pixel circuit or a transistor forming a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit. Further, the transistors 310 and 320 can be used as transistors included in various circuits such as an arithmetic circuit and a memory circuit.
  • a display panel 200G illustrated in FIG. 25 has a structure in which a transistor 310 in which a channel is formed over a substrate 301, a transistor 320A including a metal oxide in a semiconductor layer in which the channel is formed, and a transistor 320B are stacked.
  • the transistor 320A can be used as a transistor forming a pixel circuit.
  • the transistor 310 can be used as a transistor that forms a pixel circuit or a transistor that forms a driver circuit (a gate line driver circuit or a source line driver circuit) for driving the pixel circuit.
  • the transistor 320B may be used as a transistor forming a pixel circuit, or may be used as a transistor forming the driver circuit. Further, the transistor 310, the transistor 320A, and the transistor 320B can be used as transistors included in various circuits such as an arithmetic circuit or a memory circuit.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • Embodiment 4 a configuration example of a liquid crystal display device and a configuration example of an organic EL display device that can be applied to the display panel 20 described in Embodiment 1 will be described.
  • 26A and 26B are diagrams showing part of a cross section of a display panel that can be applied to the display panel 20.
  • FIG. 26A and 26B are diagrams showing part of a cross section of a display panel that can be applied to the display panel 20.
  • the display device shown in FIGS. 26A and 26B has electrodes 4015 , and the electrodes 4015 are electrically connected to terminals of the FPC 4018 through an anisotropic conductive layer 4019 . 26A and 26B, the electrode 4015 is electrically connected to the wiring 4014 in openings formed in the insulating layers 4112, 4111, and 4110. In FIGS.
  • the electrode 4015 is formed using the same conductive layer as the first electrode layer 4030
  • the wiring 4014 is formed using the same conductive layer as the source and drain electrodes of the transistors 4010 and 4011 .
  • the display portion 215 and the gate driver 221 provided over the first substrate 4001 include a plurality of transistors.
  • the included transistor 4011 is illustrated. Note that although bottom-gate transistors are illustrated as the transistors 4010 and 4011 in FIGS. 26A and 26B, they may be top-gate transistors.
  • An insulating layer 4112 is provided over the transistor 4010 and the transistor 4011 in FIGS. 26A and 26B.
  • partition walls 4510 are formed over the insulating layer 4112 .
  • the transistors 4010 and 4011 are provided over the insulating layer 4102 .
  • the transistors 4010 and 4011 each have an electrode 4017 formed over the insulating layer 4111 .
  • the electrode 4017 can function as a back gate electrode.
  • the display device illustrated in FIGS. 26A and 26B includes a capacitor 4020 .
  • the capacitor 4020 has an electrode 4021 formed in the same process as the gate electrode of the transistor 4010 and electrodes formed in the same process as the source and drain electrodes. Each electrode overlaps with an insulating layer 4103 interposed therebetween.
  • the capacitance of a capacitor provided in a pixel portion of a display device is set in consideration of leakage current of a transistor provided in the pixel portion and the like so that charge can be held for a predetermined period.
  • the capacitance of the capacitor may be set in consideration of the off-state current of the transistor and the like.
  • FIG. 26A is an example of a liquid crystal display device using a liquid crystal element as a display element.
  • a liquid crystal element 4013 which is a display element includes a first electrode layer 4030, a second electrode layer 4031, and a liquid crystal layer 4008.
  • an insulating layer 4032 and an insulating layer 4033 functioning as alignment films are provided so as to sandwich the liquid crystal layer 4008 therebetween.
  • the second electrode layer 4031 is provided on the second substrate 4006 side, and the first electrode layer 4030 and the second electrode layer 4031 overlap each other with the liquid crystal layer 4008 interposed therebetween.
  • a liquid crystal element to which various modes are applied can be used as the liquid crystal element 4013 .
  • VA Vertical Alignment
  • TN Transmission Nematic
  • IPS In-Plane-Switching
  • ASM Analy Symmetrically aligned Micro-cell
  • OCB Optically Compensated Bend
  • FLC Fluorescence Ctric Liquid Crystal
  • AFLC Anti-Ferroelectric Liquid Crystal
  • ECB Electrodefringence
  • a normally black liquid crystal display device for example, a transmissive liquid crystal display device employing a vertical alignment (VA) mode may be applied to the liquid crystal display device described in this embodiment mode.
  • VA vertical alignment
  • an MVA (Multi-Domain Vertical Alignment) mode a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, or the like can be used.
  • liquid crystal element is an element that controls transmission or non-transmission of light by the optical modulation action of liquid crystal.
  • the optical modulation action of liquid crystals is controlled by electric fields (including lateral, vertical, or oblique electric fields) applied to the liquid crystal.
  • Liquid crystals used in liquid crystal elements include thermotropic liquid crystals, low-molecular liquid crystals, polymer liquid crystals, polymer dispersed liquid crystals (PDLC: Polymer Dispersed Liquid Crystal), polymer network liquid crystals (PNLC: Polymer Network Liquid Crystal), ferroelectric liquid crystals. liquid crystal, antiferroelectric liquid crystal, or the like can be used. These liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase, etc., depending on conditions.
  • FIG. 26A illustrates an example of a liquid crystal display device including a vertical electric field liquid crystal element
  • a liquid crystal display device including a horizontal electric field liquid crystal element can be applied to one embodiment of the present invention.
  • liquid crystal exhibiting a blue phase without using an alignment film may be used.
  • the blue phase is one of the liquid crystal phases, and is a phase that appears immediately before the cholesteric phase transitions to the isotropic phase when the temperature of the cholesteric liquid crystal is increased. Since the blue phase is expressed only in a narrow temperature range, the liquid crystal layer 4008 is made of a liquid crystal composition in which 5% by weight or more of a chiral agent is mixed in order to improve the temperature range.
  • a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response speed and exhibits optical isotropy. Further, a liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent does not require alignment treatment and has a small viewing angle dependency. In addition, since rubbing treatment is not required because an alignment film is not required, electrostatic breakdown caused by rubbing treatment can be prevented, and defects or breakage of the liquid crystal display device during the manufacturing process can be reduced. .
  • a spacer 4035 is a columnar spacer obtained by selectively etching an insulating layer, and is provided to control the distance (cell gap) between the first electrode layer 4030 and the second electrode layer 4031. ing.
  • a spherical spacer may be used.
  • an optical member such as a black matrix (light shielding layer), a colored layer (color filter), a polarizing member, a retardation member, an antireflection member, and the like may be provided as appropriate.
  • an optical member such as a black matrix (light shielding layer), a colored layer (color filter), a polarizing member, a retardation member, an antireflection member, and the like may be provided as appropriate.
  • circularly polarized light by a polarizing substrate and a retardation substrate may be used.
  • a backlight, a sidelight, or the like may be used as the light source.
  • micro LEDs or the like may be used as the backlight and the sidelight.
  • a light-blocking layer 4132, a colored layer 4131, and an insulating layer 4133 are provided between the second substrate 4006 and the second electrode layer 4031.
  • a light-blocking layer 4132, a colored layer 4131, and an insulating layer 4133 are provided between the second substrate 4006 and the second electrode layer 4031.
  • the light shielding layer may be a film containing a resin material, or may be a thin film of an inorganic material such as metal.
  • a laminated film of films containing a material for the colored layer can be used as the light shielding layer.
  • a layered structure of a film containing a material used for a colored layer transmitting light of a certain color and a film containing a material used for a colored layer transmitting light of another color can be used.
  • Materials that can be used for the colored layer include metal materials, resin materials, and resin materials containing pigments or dyes.
  • the light shielding layer and the colored layer can be formed using, for example, an inkjet method.
  • the display device shown in FIGS. 26A and 26B has insulating layers 4111 and 4104 .
  • a light-emitting device can be used as a display element included in the display device.
  • an EL element that utilizes electroluminescence can be applied.
  • An EL element has a layer containing a light-emitting compound (also referred to as an “EL layer”) between a pair of electrodes. When a potential difference larger than the threshold voltage of the EL element is generated between the pair of electrodes, holes are injected into the EL layer from the anode side and electrons are injected from the cathode side. The injected electrons and holes recombine in the EL layer, and the light-emitting substance contained in the EL layer emits light.
  • an organic EL element or an inorganic EL element can be used as the EL element.
  • an LED including a micro LED
  • a compound semiconductor as a light-emitting material is also one of the EL elements, and an LED can also be used.
  • the organic EL element when a voltage is applied, electrons are injected from one electrode and holes are injected from the other electrode into the EL layer. Then, recombination of these carriers (electrons and holes) causes the light-emitting organic compound to form an excited state, and light is emitted when the excited state returns to the ground state. From such a mechanism, such a light-emitting device is called a current-excited light-emitting device.
  • the EL layer includes a substance with a high hole-injection property, a substance with a high hole-transport property, a hole-blocking material, a substance with a high electron-transport property, a substance with a high electron-injection property, and an electron-blocking material.
  • a material, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be included.
  • the EL layer can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • Inorganic EL elements are classified into dispersion type inorganic EL elements and thin film type inorganic EL elements according to the element structure.
  • a dispersion-type inorganic EL device has a light-emitting layer in which particles of a light-emitting material are dispersed in a binder.
  • a thin-film inorganic EL device has a structure in which a light-emitting layer is sandwiched between dielectric layers, which are further sandwiched between electrodes, and the light-emitting mechanism is localized light emission utilizing inner-shell electronic transition of metal ions. Note that an organic EL element is used as a light-emitting device here for explanation.
  • At least one of the pair of electrodes should be transparent in order to extract emitted light.
  • Light-emitting devices have a top emission structure in which light is emitted from the opposite side of the substrate, a bottom emission structure in which light is emitted from the substrate side, and a double emission structure in which light is emitted from both sides. dual emission) structure, and any emission structure light-emitting device can be applied.
  • FIG. 26B is an example of a light-emitting display device (also referred to as an "EL display device") using a light-emitting device as a display element.
  • a light-emitting device 4513 which is a display element is electrically connected to the transistor 4010 provided in the display portion 215 .
  • the light-emitting device 4513 has a stacked structure of the first electrode layer 4030, the light-emitting layer 4511, and the second electrode layer 4031, but is not limited to this structure.
  • the configuration of the light-emitting device 4513 can be changed as appropriate according to the direction of light extracted from the light-emitting device 4513 or the like.
  • the light-emitting device and its peripheral configuration described in Embodiment 2 can be used.
  • a partition 4510 is formed using an organic insulating material or an inorganic insulating material.
  • a photosensitive resin material it is preferable to use a photosensitive resin material, form an opening on the first electrode layer 4030, and form an inclined surface with a continuous curvature on the side surface of the opening.
  • the light-emitting layer 4511 may be composed of a single layer or may be composed of a plurality of stacked layers.
  • the emission color of the light-emitting device 4513 can be white, red, green, blue, cyan, magenta, yellow, or the like, depending on the material forming the light-emitting layer 4511 .
  • a method for realizing color display there is a method in which a light-emitting device 4513 emitting white light and a colored layer are combined, and a method in which a light-emitting device 4513 emitting light in a different color is provided for each pixel.
  • the former method is more productive than the latter method.
  • the latter method is inferior in productivity to the former method because it is necessary to separately form the light-emitting layer 4511 for each pixel.
  • the latter method can obtain an emission color with higher color purity than the former method.
  • the color purity can be further enhanced by providing the light emitting device 4513 with a microcavity structure.
  • the light-emitting layer 4511 may contain an inorganic compound such as quantum dots.
  • quantum dots in the light-emitting layer, it can function as a light-emitting material.
  • a protective layer may be formed over the second electrode layer 4031 and the partition 4510 so that oxygen, hydrogen, moisture, carbon dioxide, or the like does not enter the light-emitting device 4513 .
  • Silicon nitride, silicon oxynitride, aluminum oxide, aluminum nitride, aluminum oxynitride, aluminum oxynitride, DLC (Diamond Like Carbon), or the like can be formed as the protective layer.
  • a space sealed by the first substrate 4001, the second substrate 4006, and the sealant 4005 is sealed with a filler 4514.
  • a protective film laminated film, ultraviolet curable resin film, etc.
  • cover material that has high airtightness and little outgassing so as not to be exposed to the outside air.
  • the filler 4514 in addition to an inert gas such as nitrogen or argon, ultraviolet curing resin or thermosetting resin can be used, and PVC (polyvinyl chloride), acrylic resin, polyimide, epoxy resin, silicone resin, PVB ( polyvinyl butyral) or EVA (ethylene vinyl acetate) can be used. Also, the filler 4514 may contain a desiccant.
  • sealant 4005 a glass material such as glass frit, a curable resin that cures at room temperature such as a two-liquid mixed resin, a photocurable resin, or a thermosetting resin can be used. Further, the sealant 4005 may contain a desiccant.
  • optical films such as polarizing plates, circular polarizing plates (including elliptically polarizing plates), retardation plates ( ⁇ /4 plate, ⁇ /2 plate), color filters, etc. It may be provided as appropriate.
  • an antireflection film may be provided on the polarizing plate or the circularly polarizing plate. For example, anti-glare treatment can be applied to diffuse reflected light by unevenness of the surface and reduce glare.
  • light with high color purity can be extracted by making the light-emitting device into a microcavity structure.
  • the microcavity structure and the color filter it is possible to reduce glare and improve the visibility of the displayed image.
  • first electrode layer and the second electrode layer (also referred to as a pixel electrode layer, a common electrode layer, a counter electrode layer, etc.) that apply a voltage to the display element, the direction of light to be extracted, the location where the electrode layer is provided, and Translucency and reflectivity may be selected according to the pattern structure of the electrode layer.
  • the first electrode layer 4030 and the second electrode layer 4031 are formed of indium oxide containing tungsten oxide, indium zinc oxide containing tungsten oxide, indium oxide containing titanium oxide, indium tin oxide, and indium containing titanium oxide.
  • a light-transmitting conductive material such as tin oxide, indium zinc oxide, or indium tin oxide to which silicon oxide is added can be used.
  • the first electrode layer 4030 and the second electrode layer 4031 are tungsten (W), molybdenum (Mo), zirconium (Zr), hafnium (Hf), vanadium (V), niobium (Nb), and tantalum (Ta). , chromium (Cr), cobalt (Co), nickel (Ni), titanium (Ti), platinum (Pt), aluminum (Al), copper (Cu), silver (Ag) and other metals, or alloys thereof, or It can be formed using one or more metal nitrides.
  • the first electrode layer 4030 and the second electrode layer 4031 can be formed using a conductive composition containing a conductive polymer (also referred to as a conductive polymer).
  • a conductive polymer also referred to as a conductive polymer.
  • a so-called ⁇ -electron conjugated conductive polymer can be used. Examples include polyaniline or derivatives thereof, polypyrrole or derivatives thereof, polythiophene or derivatives thereof, or copolymers or derivatives thereof comprising two or more of aniline, pyrrole and thiophene.
  • the protection circuit is preferably configured using nonlinear elements.
  • a stack structure may be employed in which transistors or capacitors have regions where they overlap in the height direction.
  • a display device with a narrow frame can be obtained by overlapping a plurality of transistors forming a driver circuit.
  • the aperture ratio can be improved by arranging a plurality of transistors, the capacitor element 4020, and the like, which form a pixel circuit, so as to have an overlapping region even partially.
  • the semiconductor layer also has a light-transmitting property, so that the aperture ratio can be further increased.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • a device manufactured using a metal mask or FMM may be referred to as a device with an MM (metal mask) structure.
  • a device manufactured without using a metal mask or FMM may be referred to as a device with an MML (metal maskless) structure.
  • a structure in which at least light-emitting layers are separately formed in light-emitting devices with different emission wavelengths is sometimes referred to as an SBS (side-by-side) structure.
  • SBS side-by-side
  • the material and configuration can be optimized for each light-emitting device, which increases the degree of freedom in selecting the material and configuration, and facilitates improvement in brightness and reliability.
  • holes or electrons are sometimes referred to as “carriers”.
  • the hole injection layer or electron injection layer is referred to as a "carrier injection layer”
  • the hole transport layer or electron transport layer is referred to as a “carrier transport layer”
  • the hole blocking layer or electron blocking layer is referred to as a "carrier It is sometimes called a block layer.
  • the carrier injection layer, the carrier transport layer, and the carrier block layer described above may not be clearly distinguished from each other due to their cross-sectional shape, characteristics, or the like.
  • one layer may serve as two or three functions of the carrier injection layer, the carrier transport layer, and the carrier block layer.
  • a light-emitting device has an EL layer between a pair of electrodes.
  • the EL layer has at least a light-emitting layer.
  • the layers (also referred to as functional layers) included in the EL layer include a light-emitting layer, a carrier-injection layer (hole-injection layer and electron-injection layer), a carrier-transport layer (hole-transport layer and electron-transport layer), and A carrier block layer (a hole block layer and an electron block layer) and the like are included.
  • an OLED Organic Light Emitting Diode
  • a QLED Quadantum-dot Light Emitting Diode
  • the light-emitting substance included in the light-emitting device include a substance that emits fluorescence (fluorescent material), a substance that emits phosphorescence (phosphorescent material), and a substance that exhibits thermally activated delayed fluorescence (thermally activated delayed fluorescence: TADF ) materials), and inorganic compounds (quantum dot materials, etc.).
  • LEDs such as micro LED (Light Emitting Diode), can also be used as a light emitting device.
  • the emission color of the light emitting device can be infrared, red, green, blue, cyan, magenta, yellow, white, or the like.
  • color purity can be enhanced by providing a light-emitting device with a microcavity structure.
  • the light emitting device has an EL layer 763 between a pair of electrodes (lower electrode 761 and upper electrode 762).
  • EL layer 763 can be composed of multiple layers, such as layer 780 , light-emitting layer 771 , and layer 790 .
  • the light-emitting layer 771 includes at least a light-emitting substance (also referred to as a light-emitting material).
  • the layer 780 includes a layer containing a substance with high hole injection property (hole injection layer), a layer containing a substance with high hole transport property (positive hole-transporting layer) and a layer containing a highly electron-blocking substance (electron-blocking layer).
  • the layer 790 includes a layer containing a substance with high electron injection properties (electron injection layer), a layer containing a substance with high electron transport properties (electron transport layer), and a layer containing a substance with high hole blocking properties (positive layer). pore blocking layer).
  • a structure having layer 780, light-emitting layer 771, and layer 790 provided between a pair of electrodes can function as a single light-emitting unit, and the structure of FIG. 27A is referred to herein as a single structure.
  • FIG. 27B is a modification of the EL layer 763 included in the light emitting device shown in FIG. 27A. Specifically, the light-emitting device shown in FIG. It has a top layer 792 and a top electrode 762 on layer 792 .
  • layer 781 is a hole injection layer
  • layer 782 is a hole transport layer
  • layer 791 is an electron transport layer
  • layer 792 is an electron injection layer.
  • the layer 781 is an electron injection layer
  • the layer 782 is an electron transport layer
  • the layer 791 is a hole transport layer
  • the layer 792 is a hole injection layer.
  • FIGS. 27C and 27D a configuration in which a plurality of light-emitting layers (light-emitting layers 771, 772, and 773) are provided between layers 780 and 790 is also a variation of the single structure.
  • FIGS. 27C and 27D show an example having three light-emitting layers, the number of light-emitting layers in a single-structure light-emitting device may be two or four or more.
  • the single structure light emitting device may have a buffer layer between the two light emitting layers.
  • a structure in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series via a charge generation layer 785 (also referred to as an intermediate layer) is used herein.
  • This is called a tandem structure.
  • the tandem structure may also be called a stack structure.
  • FIGS. 27D and 27F are examples in which the display panel has a layer 764 that overlaps the light emitting device.
  • Figure 27D is an example of layer 764 overlapping the light emitting device shown in Figure 27C
  • Figure 27F is an example of layer 764 overlapping the light emitting device shown in Figure 27E.
  • the layer 764 one or both of a color conversion layer and a color filter (colored layer) can be used.
  • the light-emitting layers 771, 772, and 773 may use light-emitting materials that emit the same color of light, or even the same light-emitting materials.
  • the light-emitting layers 771, 772, and 773 may be formed using a light-emitting substance that emits blue light. In sub-pixels that emit blue light, blue light emitted by the light-emitting device can be extracted. In addition, in the sub-pixels that emit red light and the sub-pixels that emit green light, a color conversion layer is provided as layer 764 shown in FIG. and can extract red or green light.
  • a single-structure light-emitting device preferably has a light-emitting layer containing a light-emitting substance that emits blue light and a light-emitting layer containing a light-emitting substance that emits visible light with a longer wavelength than blue.
  • a single-structure light-emitting device has three light-emitting layers, a light-emitting layer having a light-emitting substance that emits red (R) light, a light-emitting layer having a light-emitting substance that emits green (G) light, and a light-emitting layer that emits blue light. It is preferable to have a light-emitting layer having a light-emitting substance (B) that emits light.
  • the stacking order of the light-emitting layers can be R, G, B from the anode side, or R, B, G, etc. from the anode side.
  • a buffer layer may be provided between R and G or B.
  • a light-emitting layer containing a light-emitting substance that emits blue (B) light and a light-emitting layer containing a light-emitting substance that emits yellow light are required.
  • This configuration is sometimes called BY single.
  • a color filter may be provided as layer 764 shown in FIG. 27D.
  • a desired color of light can be obtained by passing the white light through the color filter.
  • a light-emitting device that emits white light preferably contains two or more types of light-emitting substances.
  • two or more light-emitting substances may be selected so that the light emission of each light-emitting substance has a complementary color relationship.
  • the emission color of the first light-emitting layer and the emission color of the second light-emitting layer have a complementary color relationship, it is possible to obtain a light-emitting device that emits white light as a whole. The same applies to light-emitting devices having three or more light-emitting layers.
  • the light-emitting layer 771 and the light-emitting layer 772 may be made of a light-emitting material that emits light of the same color, or may be the same light-emitting material.
  • a light-emitting substance that emits blue light may be used for each of the light-emitting layers 771 and 772 .
  • blue light emitted by the light-emitting device can be extracted.
  • a color conversion layer is provided as layer 764 shown in FIG. and can extract red or green light.
  • the light-emitting device having the configuration shown in FIG. 27E or FIG. 27F is used for the sub-pixel that emits light of each color
  • different light-emitting substances may be used depending on the sub-pixel.
  • a light-emitting substance that emits red light may be used for each of the light-emitting layers 771 and 772 .
  • a light-emitting substance that emits green light may be used for each of the light-emitting layers 771 and 772 .
  • a light-emitting substance that emits blue light may be used for each of the light-emitting layers 771 and 772 . It can be said that the display panel having such a configuration employs a tandem structure light emitting device and has an SBS structure. Therefore, it is possible to have both the merit of the tandem structure and the merit of the SBS structure. As a result, a highly reliable light-emitting device capable of emitting light with high brightness can be realized.
  • light-emitting substances with different emission colors may be used for the light-emitting layer 771 and the light-emitting layer 772 .
  • the light emitted from the light-emitting layer 771 and the light emitted from the light-emitting layer 772 are complementary colors, white light emission is obtained.
  • a color filter may be provided as layer 764 shown in FIG. 27F. A desired color of light can be obtained by passing the white light through the color filter.
  • 27E and 27F show an example in which the light-emitting unit 763a has one light-emitting layer 771 and the light-emitting unit 763b has one light-emitting layer 772, but the present invention is not limited to this.
  • Each of the light-emitting unit 763a and the light-emitting unit 763b may have two or more light-emitting layers.
  • FIG. 27E and FIG. 27F exemplify a light-emitting device having two light-emitting units
  • the present invention is not limited to this.
  • the light emitting device may have three or more light emitting units.
  • FIGS. 28A to 28C the configuration of the light-emitting device shown in FIGS. 28A to 28C can be mentioned.
  • FIG. 28A shows a configuration having three light emitting units.
  • a structure having two light-emitting units may be called a two-stage tandem structure, and a structure having three light-emitting units may be called a three-stage tandem structure.
  • a plurality of light emitting units are connected in series with the charge generation layer 785 interposed therebetween.
  • Light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a
  • light-emitting unit 763b includes layer 780b, light-emitting layer 772, and layer 790b
  • light-emitting unit 763c includes , a layer 780c, a light-emitting layer 773, and a layer 790c.
  • the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 preferably contain light-emitting substances that emit light of the same color.
  • the light-emitting layer 771, the light-emitting layer 772, and the light-emitting layer 773 each include a red (R) light-emitting substance (so-called three-stage tandem structure of R ⁇ R ⁇ R), the light-emitting layer 771, the light-emitting layer 772 and 773 each include a green (G) light-emitting substance (a so-called G ⁇ G ⁇ G three-stage tandem structure), or the light-emitting layers 771, 772, and 773 each include a blue light-emitting substance.
  • a structure (B) including a light-emitting substance (a so-called three-stage tandem structure of B ⁇ B ⁇ B) can be employed.
  • FIG. 28B shows a configuration in which a plurality of light-emitting units (light-emitting unit 763a and light-emitting unit 763b) are connected in series with charge generation layers 785 interposed therebetween.
  • Light-emitting unit 763a includes layer 780a, light-emitting layers 771a, 771b, and 771c, and layer 790a.
  • Light-emitting unit 763b includes layer 780b, light-emitting layers 772a, 772b, and layer 790a. and a light-emitting layer 772c and a layer 790b.
  • the light-emitting layers 771a, 771b, and 771c are configured to emit white light (W) by selecting light-emitting substances having complementary colors.
  • the light-emitting layers 772a, 772b, and 772c light-emitting substances having complementary colors are selected so that white light emission (W) is possible. That is, the configuration shown in FIG. 28C has a two-stage tandem structure of W ⁇ W. Note that there is no particular limitation on the stacking order of the light-emitting substances that are complementary colors of the light-emitting layer 771a, the light-emitting layer 771b, and the light-emitting layer 771c. A practitioner can appropriately select the optimum stacking order. Although not shown, a three-stage tandem structure of W ⁇ W ⁇ W or a tandem structure of four or more stages may be employed.
  • a tandem structure light-emitting device When a tandem structure light-emitting device is used, a two-stage tandem structure of B ⁇ Y having a light-emitting unit that emits yellow (Y) light and a light-emitting unit that emits blue (B) light, red (R) and A two-stage tandem structure of R G ⁇ B having a light emitting unit that emits green (G) light and a light emitting unit that emits blue (B) light, a light emitting unit that emits blue (B) light, and a light emitting unit that emits yellow (B) light.
  • a light-emitting unit having one light-emitting substance and a light-emitting unit having a plurality of light-emitting substances may be combined.
  • a plurality of light-emitting units (light-emitting unit 763a, light-emitting unit 763b, and light-emitting unit 763c) are connected in series with charge generation layer 785 interposed therebetween.
  • Light-emitting unit 763a includes layer 780a, light-emitting layer 771, and layer 790a
  • light-emitting unit 763b includes layer 780b, light-emitting layer 772a, light-emitting layer 772b, light-emitting layer 772c, and layer 790b.
  • the light-emitting unit 763c includes a layer 780c, a light-emitting layer 773, and a layer 790c.
  • the light-emitting unit 763a is a light-emitting unit that emits blue (B) light
  • the light-emitting unit 763b emits red (R), green (G), and yellow-green (YG) light.
  • a three-stage tandem structure of B ⁇ R, G, and YG ⁇ B, in which the light-emitting unit 763c is a light-emitting unit that emits blue (B) light, or the like can be applied.
  • the order of the number of stacked light-emitting units and the colors is as follows: from the anode side, a two-stage structure of B and Y; a two-stage structure of B and light-emitting unit X; a three-stage structure of B, Y, and B; , B, and the order of the number of layers of light-emitting layers and the colors in the light-emitting unit X is, from the anode side, a two-layer structure of R and Y, a two-layer structure of R and G, and a two-layer structure of G and R.
  • a two-layer structure, a three-layer structure of G, R, and G, or a three-layer structure of R, G, and R can be used.
  • another layer may be provided between the two light-emitting layers.
  • the layer 780 and the layer 790 may each independently have a laminated structure composed of two or more layers.
  • light emitting unit 763a has layer 780a, light emitting layer 771 and layer 790a, and light emitting unit 763b has layer 780b, light emitting layer 772 and layer 790b.
  • layers 780a and 780b each comprise one or more of a hole injection layer, a hole transport layer, and an electron blocking layer.
  • layers 790a and 790b each include one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. If the bottom electrode 761 is the cathode and the top electrode 762 is the anode, then layers 780a and 790a would have the opposite arrangement, and layers 780b and 790b would also have the opposite arrangement.
  • layer 780a has a hole-injection layer and a hole-transport layer over the hole-injection layer, and further includes a hole-transport layer. It may have an electron blocking layer on the layer.
  • Layer 790a also has an electron-transporting layer and may also have a hole-blocking layer between the light-emitting layer 771 and the electron-transporting layer.
  • Layer 780b also has a hole transport layer and may also have an electron blocking layer on the hole transport layer.
  • Layer 790b also has an electron-transporting layer, an electron-injecting layer on the electron-transporting layer, and may also have a hole-blocking layer between the light-emitting layer 772 and the electron-transporting layer. If the bottom electrode 761 is the cathode and the top electrode 762 is the anode, for example, layer 780a has an electron injection layer, an electron transport layer on the electron injection layer, and a positive electrode on the electron transport layer. It may have a pore blocking layer. Layer 790a also has a hole-transporting layer and may also have an electron-blocking layer between the light-emitting layer 771 and the hole-transporting layer.
  • Layer 780b also has an electron-transporting layer and may also have a hole-blocking layer on the electron-transporting layer.
  • Layer 790b also has a hole-transporting layer, a hole-injecting layer on the hole-transporting layer, and an electron-blocking layer between the light-emitting layer 772 and the hole-transporting layer. good too.
  • two light-emitting units are stacked with the charge generation layer 785 interposed therebetween.
  • Charge generation layer 785 has at least a charge generation region.
  • the charge-generating layer 785 has a function of injecting electrons into one of the two light-emitting units and holes into the other when a voltage is applied between the pair of electrodes.
  • a conductive film that transmits visible light is used for the electrode on the light extraction side of the lower electrode 761 and the upper electrode 762 .
  • a conductive film that reflects visible light is preferably used for the electrode on the side from which light is not extracted.
  • the display panel has a light-emitting device that emits infrared light
  • a conductive film that transmits visible light and infrared light is used for the electrode on the side from which light is extracted
  • a conductive film is used for the electrode on the side that does not extract light. It is preferable to use a conductive film that reflects visible light and infrared light.
  • a conductive film that transmits visible light may also be used for the electrode on the side from which light is not extracted.
  • the electrode is preferably placed between the reflective layer and the EL layer 763 . That is, the light emitted from the EL layer 763 may be reflected by the reflective layer and extracted from the display panel.
  • metals, alloys, electrically conductive compounds, mixtures thereof, and the like can be appropriately used.
  • specific examples of such materials include aluminum, titanium, chromium, manganese, iron, cobalt, nickel, copper, gallium, zinc, indium, tin, molybdenum, tantalum, tungsten, palladium, gold, platinum, silver, yttrium, Metals such as neodymium, and alloys containing appropriate combinations of these are included.
  • Examples of such materials include indium tin oxide (In—Sn oxide, also referred to as ITO), In—Si—Sn oxide (also referred to as ITSO), indium zinc oxide (In—Zn oxide), and In -W-Zn oxide and the like can be mentioned.
  • Examples of such materials include aluminum-containing alloys (aluminum alloys) such as alloys of aluminum, nickel, and lanthanum (Al-Ni-La), and alloys of silver, palladium and copper (Ag-Pd-Cu, APC Also referred to as).
  • elements belonging to Group 1 or Group 2 of the periodic table of elements not exemplified above e.g., lithium, cesium, calcium, strontium
  • europium e.g., europium
  • rare earth metals such as ytterbium
  • appropriate combinations of these alloy containing, graphene, and the like e.g., graphene, graphene, and the like.
  • the light-emitting device preferably employs a micro-optical resonator (microcavity) structure. Therefore, one of the pair of electrodes included in the light-emitting device is preferably an electrode (semi-transmissive/semi-reflective electrode) that is transparent and reflective to visible light, and the other is an electrode that is reflective to visible light ( reflective electrode). Since the light-emitting device has a microcavity structure, the light emitted from the light-emitting layer can be resonated between both electrodes, and the light emitted from the light-emitting device can be enhanced.
  • microcavity micro-optical resonator
  • the semi-transmissive/semi-reflective electrode has a laminated structure of a conductive layer that can be used as a reflective electrode and a conductive layer that can be used as an electrode that transmits visible light (also referred to as a transparent electrode). can be done.
  • the light transmittance of the transparent electrode is set to 40% or more.
  • an electrode having a transmittance of 40% or more for visible light (light having a wavelength of 400 nm or more and less than 750 nm) as the transparent electrode of the light emitting device.
  • the visible light reflectance of the semi-transmissive/semi-reflective electrode is 10% or more and 95% or less, preferably 30% or more and 80% or less.
  • the visible light reflectance of the reflective electrode is 40% or more and 100% or less, preferably 70% or more and 100% or less.
  • the resistivity of these electrodes is preferably 1 ⁇ 10 ⁇ 2 ⁇ cm or less.
  • a light-emitting device has at least a light-emitting layer. Further, in the light-emitting device, layers other than the light-emitting layer include a substance with high hole-injection property, a substance with high hole-transport property, a hole-blocking material, a substance with high electron-transport property, an electron-blocking material, and a layer with high electron-injection property. A layer containing a substance, a bipolar substance (a substance with high electron-transport properties and high hole-transport properties), or the like may be further included.
  • the light-emitting device has, in addition to the light-emitting layer, one or more of a hole injection layer, a hole transport layer, a hole blocking layer, a charge generation layer, an electron blocking layer, an electron transport layer, and an electron injection layer. can be configured.
  • Either a low-molecular-weight compound or a high-molecular-weight compound can be used in the light-emitting device, and an inorganic compound may be included.
  • Each of the layers constituting the light-emitting device can be formed by a vapor deposition method (including a vacuum vapor deposition method), a transfer method, a printing method, an inkjet method, a coating method, or the like.
  • the emissive layer has one or more emissive materials.
  • a substance emitting light of blue, purple, blue-violet, green, yellow-green, yellow, orange, red, or the like is used as appropriate.
  • a substance that emits near-infrared light can be used as the light-emitting substance.
  • Luminescent materials include fluorescent materials, phosphorescent materials, TADF materials, quantum dot materials, and the like.
  • fluorescent materials include pyrene derivatives, anthracene derivatives, triphenylene derivatives, fluorene derivatives, carbazole derivatives, dibenzothiophene derivatives, dibenzofuran derivatives, dibenzoquinoxaline derivatives, quinoxaline derivatives, pyridine derivatives, pyrimidine derivatives, phenanthrene derivatives, and naphthalene derivatives. mentioned.
  • Examples of phosphorescent materials include organometallic complexes (especially iridium complexes) having a 4H-triazole skeleton, 1H-triazole skeleton, imidazole skeleton, pyrimidine skeleton, pyrazine skeleton, or pyridine skeleton, and phenylpyridine derivatives having an electron-withdrawing group.
  • organometallic complexes especially iridium complexes
  • platinum complexes, rare earth metal complexes, and the like, which serve as ligands, can be mentioned.
  • the light-emitting layer may contain one or more organic compounds (host material, assist material, etc.) in addition to the light-emitting substance (guest material).
  • One or both of a highly hole-transporting substance (hole-transporting material) and a highly electron-transporting substance (electron-transporting material) can be used as the one or more organic compounds.
  • a highly hole-transporting substance hole-transporting material
  • a highly electron-transporting substance electron-transporting material
  • electron-transporting material a material having a high electron-transporting property that can be used for the electron-transporting layer, which will be described later, can be used.
  • Bipolar materials or TADF materials may also be used as one or more organic compounds.
  • the light-emitting layer preferably includes, for example, a phosphorescent material and a combination of a hole-transporting material and an electron-transporting material that easily form an exciplex.
  • ExTET Exciplex-Triplet Energy Transfer
  • a combination that forms an exciplex that emits light that overlaps with the wavelength of the absorption band on the lowest energy side of the light-emitting substance energy transfer becomes smooth and light emission can be efficiently obtained. With this configuration, high efficiency, low-voltage driving, and long life of the light-emitting device can be realized at the same time.
  • the hole-injecting layer is a layer that injects holes from the anode to the hole-transporting layer, and contains a material with high hole-injecting properties.
  • highly hole-injecting materials include aromatic amine compounds and composite materials containing a hole-transporting material and an acceptor material (electron-accepting material).
  • hole-transporting material a material having a high hole-transporting property that can be used for the hole-transporting layer, which will be described later, can be used.
  • oxides of metals belonging to groups 4 to 8 in the periodic table can be used.
  • Specific examples include molybdenum oxide, vanadium oxide, niobium oxide, tantalum oxide, chromium oxide, tungsten oxide, manganese oxide, and rhenium oxide.
  • molybdenum oxide is particularly preferred because it is stable even in the atmosphere, has low hygroscopicity, and is easy to handle.
  • An organic acceptor material containing fluorine can also be used.
  • Organic acceptor materials such as quinodimethane derivatives, chloranil derivatives, and hexaazatriphenylene derivatives can also be used.
  • a material with a high hole-injection property a material containing a hole-transporting material and an oxide of a metal belonging to Groups 4 to 8 in the above-described periodic table (typically molybdenum oxide) is used. may be used.
  • the hole-transporting layer is a layer that transports holes injected from the anode to the light-emitting layer by means of the hole-injecting layer.
  • a hole-transporting layer is a layer containing a hole-transporting material.
  • the hole-transporting material a substance having a hole mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these can be used as long as they have a higher hole-transport property than electron-transport property.
  • hole-transporting materials include ⁇ -electron-rich heteroaromatic compounds (e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.), aromatic amines (compounds having an aromatic amine skeleton), and other highly hole-transporting materials. is preferred.
  • ⁇ -electron-rich heteroaromatic compounds e.g., carbazole derivatives, thiophene derivatives, furan derivatives, etc.
  • aromatic amines compounds having an aromatic amine skeleton
  • other highly hole-transporting materials is preferred.
  • the electron blocking layer is provided in contact with the light emitting layer.
  • the electron blocking layer is a layer containing a material capable of transporting holes and blocking electrons.
  • a material having an electron blocking property can be used among the above hole-transporting materials.
  • the electron blocking layer has hole-transporting properties, it can also be called a hole-transporting layer. Moreover, the layer which has electron blocking property can also be called an electron blocking layer among hole transport layers.
  • the electron-transporting layer is a layer that transports electrons injected from the cathode to the light-emitting layer by the electron-injecting layer.
  • the electron-transporting layer is a layer containing an electron-transporting material.
  • an electron-transporting material a substance having an electron mobility of 1 ⁇ 10 ⁇ 6 cm 2 /Vs or more is preferable. Note that substances other than these substances can be used as long as they have a higher electron-transport property than hole-transport property.
  • electron-transporting materials include metal complexes having a quinoline skeleton, metal complexes having a benzoquinoline skeleton, metal complexes having an oxazole skeleton, metal complexes having a thiazole skeleton, oxadiazole derivatives, triazole derivatives, imidazole derivatives, ⁇ electron deficient including oxazole derivatives, thiazole derivatives, phenanthroline derivatives, quinoline derivatives with quinoline ligands, benzoquinoline derivatives, quinoxaline derivatives, dibenzoquinoxaline derivatives, pyridine derivatives, bipyridine derivatives, pyrimidine derivatives, and other nitrogen-containing heteroaromatic compounds
  • a material having a high electron transport property such as a type heteroaromatic compound can be used.
  • the hole blocking layer is provided in contact with the light emitting layer.
  • the hole-blocking layer is a layer containing a material that has electron-transport properties and can block holes. Among the above electron-transporting materials, materials having hole-blocking properties can be used for the hole-blocking layer.
  • the hole blocking layer has electron transport properties, it can also be called an electron transport layer. Moreover, among the electron transport layers, a layer having hole blocking properties can also be referred to as a hole blocking layer.
  • the electron injection layer is a layer that injects electrons from the cathode into the electron transport layer, and is a layer containing a material with high electron injection properties.
  • Alkali metals, alkaline earth metals, or compounds thereof can be used as materials with high electron injection properties.
  • a composite material containing an electron-transporting material and a donor material (electron-donating material) can also be used as a material with high electron-injecting properties.
  • the LUMO level of the material with high electron injection properties has a small difference (specifically, 0.5 eV or less) from the value of the work function of the material used for the cathode.
  • the electron injection layer includes, for example, lithium, cesium, ytterbium, lithium fluoride (LiF), cesium fluoride (CsF), calcium fluoride (CaF x , X is an arbitrary number), 8-(quinolinolato)lithium (abbreviation: Liq), 2-(2-pyridyl)phenoratritium (abbreviation: LiPP), 2-(2-pyridyl)-3-pyridinolatritium (abbreviation: LiPPy), 4-phenyl-2-(2-pyridyl)pheno Alkali metals such as latolithium (abbreviation: LiPPP), lithium oxide (LiO x ), cesium carbonate, alkaline earth metals, or compounds thereof can be used.
  • the electron injection layer may have a laminated structure of two or more layers. Examples of the laminated structure include a structure in which lithium fluoride is used for the first layer and ytterbium is provided for the second layer.
  • the electron injection layer may have an electron-transporting material.
  • a compound having a lone pair of electrons and an electron-deficient heteroaromatic ring can be used as the electron-transporting material.
  • a compound having at least one of a pyridine ring, diazine ring (pyrimidine ring, pyrazine ring, pyridazine ring), and triazine ring can be used.
  • the lowest unoccupied molecular orbital (LUMO) level of an organic compound having an unshared electron pair is preferably ⁇ 3.6 eV or more and ⁇ 2.3 eV or less.
  • CV cyclic voltammetry
  • photoelectron spectroscopy optical absorption spectroscopy
  • inverse photoemission spectroscopy etc. are used to determine the highest occupied molecular orbital (HOMO) level and LUMO level of an organic compound. can be estimated.
  • BPhen 4,7-diphenyl-1,10-phenanthroline
  • NBPhen 2,9-di(naphthalen-2-yl)-4,7-diphenyl-1,10-phenanthroline
  • mPPhen2P 2,2-(1,3-phenylene)bis(9-phenyl-1,10-phenanthroline)
  • HATNA diquinoxalino[2,3-a:2',3'-c]phenazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-triazine
  • TmPPPyTz 2,4,6-tris[3′-(pyridin-3-yl)biphenyl-3-yl]-1,3,5-
  • the charge generation layer has at least a charge generation region, as described above.
  • the charge generation region preferably contains an acceptor material, for example, preferably contains a hole transport material and an acceptor material applicable to the hole injection layer described above.
  • the charge generation layer preferably has a layer containing a material with high electron injection properties.
  • This layer can also be called an electron injection buffer layer.
  • the electron injection buffer layer is preferably provided between the charge generation region and the electron transport layer. Since the injection barrier between the charge generation region and the electron transport layer can be relaxed by providing the electron injection buffer layer, electrons generated in the charge generation region can be easily injected into the electron transport layer.
  • the electron injection buffer layer preferably contains an alkali metal or an alkaline earth metal, and can be configured to contain, for example, an alkali metal compound or an alkaline earth metal compound.
  • the electron injection buffer layer preferably has an inorganic compound containing an alkali metal and oxygen, or an inorganic compound containing an alkaline earth metal and oxygen. Lithium (Li 2 O), etc.) is more preferred.
  • the above materials applicable to the electron injection layer can be preferably used.
  • the charge generation layer preferably has a layer containing a material with high electron transport properties. Such layers may also be referred to as electron relay layers.
  • the electron relay layer is preferably provided between the charge generation region and the electron injection buffer layer. If the charge generation layer does not have an electron injection buffer layer, the electron relay layer is preferably provided between the charge generation region and the electron transport layer.
  • the electron relay layer has a function of smoothly transferring electrons by preventing interaction between the charge generation region and the electron injection buffer layer (or electron transport layer).
  • a phthalocyanine-based material such as copper (II) phthalocyanine (abbreviation: CuPc), or a metal complex having a metal-oxygen bond and an aromatic ligand.
  • charge generation region the electron injection buffer layer, and the electron relay layer described above may not be clearly distinguishable depending on their cross-sectional shape, characteristics, or the like.
  • the charge generation layer may contain a donor material instead of the acceptor material.
  • the charge-generating layer may have a layer containing an electron-transporting material and a donor material, which are applicable to the electron-injecting layer described above.
  • This embodiment can be implemented by appropriately combining at least part of it with other embodiments described herein.
  • OLED light emitting device
  • SL source line
  • Vano anode power line
  • Vcat cathode power line
  • 10 display device, 15: eye
  • 20d region
  • 20w wiring
  • 30 Display panel, 31i: Image, 31p: Pixel, 31: Display unit, 33: Sub-pixel, 36: FPC
  • 40 Display panel, 41c: Image, 41i: Image, 41: Display unit, 51r : reflective surface, 51: half mirror, 52r: reflective surface, 52: half mirror, 61: lens, 62: lens, 75: circuit, 76: circuit, 81: layer, 82: layer, 83: layer

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