WO2023149154A1 - 固体撮像素子、電子機器 - Google Patents

固体撮像素子、電子機器 Download PDF

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Publication number
WO2023149154A1
WO2023149154A1 PCT/JP2023/000103 JP2023000103W WO2023149154A1 WO 2023149154 A1 WO2023149154 A1 WO 2023149154A1 JP 2023000103 W JP2023000103 W JP 2023000103W WO 2023149154 A1 WO2023149154 A1 WO 2023149154A1
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WIPO (PCT)
Prior art keywords
light
solid
imaging device
state imaging
gap
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Ceased
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PCT/JP2023/000103
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English (en)
French (fr)
Japanese (ja)
Inventor
博高 沓掛
了 高橋
光祐 尾崎
雅史 大浦
卓 森山
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Priority to JP2023578427A priority Critical patent/JPWO2023149154A1/ja
Priority to US18/727,183 priority patent/US20250113637A1/en
Priority to EP23749471.1A priority patent/EP4475188A4/en
Priority to CN202380015411.5A priority patent/CN118435353A/zh
Priority to DE112023000807.8T priority patent/DE112023000807T5/de
Priority to KR1020247026518A priority patent/KR20240138083A/ko
Publication of WO2023149154A1 publication Critical patent/WO2023149154A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Definitions

  • This technology relates to a technology of a solid-state imaging device and an electronic device configured by arranging a plurality of sound pixels.
  • a solid-state imaging device configured by arranging a plurality of pixels for receiving incident light and performing photoelectric conversion to generate an image signal is widely used.
  • an image signal of a color image can be obtained by arranging a color filter that transmits incident light of a predetermined wavelength for each pixel.
  • a solid-state imaging device with color filters when light incident on a pixel passes through a pixel boundary and enters an adjacent pixel, color mixture occurs, resulting in deterioration of image quality.
  • Patent Document 1 below discloses a technique of forming a gap between color filters.
  • the air gap has a lower refractive index than the color filter, it is possible to obtain the effect of preventing color mixture by reflecting incident light from adjacent pixels back to the original pixel.
  • Patent Document 1 Although it is possible to prevent color mixture, there arises a problem that incident light is reflected at the upper part of the gap and flare occurs.
  • This technology was developed in view of such problems, and aims to improve light sensitivity and reduce noise caused by color mixture and reflection.
  • a solid-state imaging device includes a photoelectric conversion unit that performs photoelectric conversion, and a color filter that is formed on a light incident side of the photoelectric conversion unit and selectively transmits light received by the photoelectric conversion unit. , between the color filters, a gap and a light-shielding film are formed on the light incident side of the gap. As a result, gaps are formed between the color filters, and light entering from the side surfaces of the gaps is totally reflected. The light shielding film above the gap blocks the light incident on the boundary portion of the color filter from above.
  • An electronic device includes an optical system element into which light is incident, a solid-state imaging element that receives the light incident from the optical system element and outputs a pixel signal according to the amount of received light, and a signal corresponding to the pixel signal.
  • a signal processing unit that performs processing, the solid-state imaging device includes a photoelectric conversion unit that performs photoelectric conversion; and a light-shielding film formed on the light incident side of the air gap between the color filters.
  • FIG. 1 is a cross-sectional view of a solid-state imaging device according to a first embodiment
  • FIG. It is a figure for demonstrating the incident light which injects into a solid-state image sensor, its reflected light, and transmitted light.
  • FIG. 11 is a diagram for explaining the manufacturing process of the solid-state imaging device shown together with FIGS. 4 to 10, and shows a state in which a wiring layer and a photodiode are formed on a semiconductor substrate;
  • FIG. 3 is a diagram showing a state in which an insulating layer is formed on the back surface side of a semiconductor substrate; It is a figure which shows the state by which the color filter was formed in the back surface side of the insulating layer.
  • FIG. 4 is a diagram showing a state in which a resist is applied between color filters and on the upper surface side; It is a figure which shows the state which is irradiating light to the resist. It is a figure which shows the state which removed the resist and formed the light shielding film.
  • FIG. 10 is a diagram showing a state in which an on-chip lens is attached to the rear surface side of the color filter and the light shielding film; It is a figure which shows the solid-state image sensor as a prior art example.
  • FIG. 10 is a diagram showing a simulation result of suppression of color mixture based on incident light
  • FIG. 10 is a diagram showing how parallel light along an optical axis is incident from above a light shielding film in the solid-state imaging device of the present technology
  • FIG. 5 is a diagram showing simulation results of flare suppression effects based on incident light.
  • FIG. 10 is a diagram showing a solid-state imaging device as another conventional example; It is a figure which shows a mode that the incident light injects from the upper part of a light shielding film in the solid-state image sensor of this technique.
  • FIG. 10 is a cross-sectional view of a solid-state imaging device having forward tapered voids according to a second embodiment
  • FIG. 10 is a cross-sectional view of a solid-state imaging device having an inversely tapered void according to a second embodiment
  • It is a figure for demonstrating the relationship between image height and the taper shape of a space
  • It is a figure for demonstrating the example of arrangement
  • FIG. 10 is a diagram for explaining an example in which the forward tapered shape of the voids differs for each type of color filter;
  • FIG. 10 is a diagram for explaining an example in which the reverse tapered shape of voids differs for each type of color filter;
  • FIG. 10 is a diagram for explaining an example in which the corners of the gap are rounded;
  • FIG. 11 is a cross-sectional view of a solid-state imaging device having a metal film according to a third embodiment; It is a figure for demonstrating the state in which incident light is interrupted
  • FIGS. 30 to 33 are diagrams for explaining the manufacturing process of the solid-state imaging device according to the second embodiment, and this diagram shows a state in which a film-like metal layer is formed on the back side of the insulating layer. It is a figure which shows. It is a figure which shows the state by which the resist was apply
  • FIG. 10 is a diagram showing a state in which a metal film is formed by partially removing the metal film by etching; It is a figure which shows the state by which the color filter was arrange
  • FIG. 12 is a diagram showing a state in which a resist is applied so as to cover the color filters in the procedure of the manufacturing method according to the fourth embodiment;
  • FIG. 11 is a cross-sectional view of a solid-state imaging device having a light shielding film according to a fourth embodiment; It is a functional block diagram of an imaging device as an electronic device to which the solid-state imaging device of the present technology is applied.
  • the solid-state imaging device 1 includes a pixel array section 2 , a vertical driving section 3 , a system control section 4 , a column processing section 5 , a horizontal driving section 6 and a signal processing section 7 .
  • the pixel array section 2 has a plurality of pixels Px arranged two-dimensionally in rows and columns. Each pixel Px has a photodiode PD as a photoelectric conversion unit.
  • the row direction refers to the horizontal arrangement direction of the pixels Px
  • the column direction refers to the vertical arrangement direction of the pixels Px.
  • the row direction is the horizontal direction
  • the column direction is the vertical direction.
  • a direction perpendicular to the row direction and the column direction is referred to as an optical axis direction.
  • the pixel array section 2 is provided with a first pixel Px1 arranged at a position with a low image height and a second pixel Px2 arranged at a position with a high image height.
  • the second pixel Px2 is arranged on the outer peripheral side of the first pixel Px1 so as to surround the first pixel Px1.
  • first pixel Px1 and the second pixel Px2 will be referred to as pixels Px when they are described without distinction.
  • a row drive line 8 is wired along the row direction for each pixel row with respect to the matrix-like pixel arrangement, and a vertical signal line 9 is arranged along the column direction for each pixel column. Wired.
  • the row drive line 8 transmits a drive signal for driving when reading a signal from the pixel Px.
  • One end of the row drive line 8 is connected to an output terminal corresponding to each row of the vertical drive section 3 .
  • the system control unit 4 includes a timing generator that generates various timing signals, and controls the vertical driving unit 3, the column processing unit 5, the horizontal driving unit 6, and the like based on the various timing signals generated by the timing generator. drive control.
  • the vertical drive unit 3 is composed of shift registers, address decoders, etc., and drives the pixels Px of the pixel array unit 2 all at once or in units of rows. That is, the vertical drive section 3 constitutes a drive control section that controls the operation of each pixel Px of the pixel array section 2 together with the system control section 4 that controls the vertical drive section 3 .
  • a signal is input to the column processor 5 through the corresponding vertical signal line 9 .
  • the column processing unit 5 performs predetermined signal processing on the detection signal read from each pixel Px through the vertical signal line 9, and temporarily holds the detection signal after the signal processing. Specifically, the column processing unit 5 performs noise removal processing, A/D (Analog to Digital) conversion processing, and the like as signal processing.
  • the horizontal driving section 6 is composed of a shift register, an address decoder, etc., and selects unit circuits corresponding to the pixel columns of the column processing section 5 in order. By the selective scanning by the horizontal driving section 6, detection signals that have undergone signal processing for each unit circuit in the column processing section 5 are sequentially output.
  • the signal processing unit 7 has at least an arithmetic processing function, performs various signal processing on the detection signal output from the column processing unit 5, and outputs the processed signal.
  • the signal processing unit 7 may perform only buffering, or may perform black level adjustment, column variation correction, various digital signal processing, and the like.
  • the pixel Px is formed by layering a wiring layer 11 formed on the side opposite to the light incident side (for example, the front side) of the semiconductor substrate 10 and a filter layer 12 formed on the light incident side (for example, the back side). Become.
  • the semiconductor substrate 10 is made of silicon (Si) with a thickness of, for example, about 1 ⁇ m to 6 ⁇ m. Inside the semiconductor substrate 10, a photodiode PD serving as a photoelectric conversion portion is formed substantially in the center of the pixel Px.
  • a photodiode PD as a photoelectric conversion portion is configured by a pn junction formed by an n-type semiconductor region and a p-type well region.
  • the wiring layer 11 has wirings 11b laminated in a plurality of layers in the optical axis direction inside an insulating portion 11a made of an insulating material.
  • the wirings 11b arranged in different layers are appropriately electrically connected to each other through through-hole vias (not shown) or the like.
  • Various transistors such as a transfer transistor are driven via the wiring 11b formed in the wiring layer 11.
  • Color filters 13 are arranged on the filter layer 12 .
  • a color filter 13R that transmits only red light
  • a color filter 13G that transmits only green light
  • a color filter 13B that transmits only blue light.
  • Each color filter 13 forms, for example, a Bayer array.
  • the color filter 13 may include a color filter 13C that transmits only cyan light, a color filter 13M that transmits only magenta light, and a color filter 13Y that transmits only yellow light.
  • a color filter 13 for white pixels or the like is also conceivable.
  • a gap 14 and a light shielding film 15 formed on the light incident side of the gap 14 are provided between the color filters 13 in the filter layer 12 .
  • the void 14 has a lower refractive index than the color filter 13 , thereby providing a function of guiding incident light to the semiconductor substrate 10 .
  • the void 14 is formed in a shape surrounding the color filter 13 .
  • the light shielding film 15 is, for example, a black organic film formed of a negative resist. As a result, the light can be suitably blocked, and the effect of suppressing color mixture can be enhanced. In addition, by suppressing the reflection of incident light by the light shielding film 15, it is possible to obtain the effect of suppressing the occurrence of flare. Specifically, it will be described later.
  • the light shielding film 15 is not limited to black, and may be an organic film having light shielding properties or wavelength selectivity.
  • the light shielding film 15 when the light source irradiates light other than blue light, by forming the light shielding film 15 with a negative resist that allows only blue light to pass through, the incident light does not pass through the light shielding film 15, thereby suppressing color mixture. can.
  • the light-shielding film 15 is provided to shield light that would otherwise enter the adjacent pixel Px through the gap 14, thereby obtaining an effect of preventing color mixture.
  • the light shielding film 15 functions as an antireflection film that absorbs incident light, it is possible to prevent the occurrence of flare.
  • the insulating layer 16 functions as a protective film that protects the semiconductor substrate 10 and has a function of preventing diffusion of contaminants from the color filter 13 to the semiconductor substrate 10 .
  • the insulating layer 16 is composed of an insulator such as SiO2, for example.
  • the pixel Px has an on-chip lens 17 on the light incident side of the filter layer 12 .
  • the on-chip lens 17 is formed, for example, for each pixel Px on a planarization film (not shown) formed on the light incident side of the color filter 13 .
  • the on-chip lens 17 has a function of efficiently condensing incident light onto the photodiode PD.
  • the on-chip lens 17 is formed in a hemispherical shape from an inorganic material such as SiN or an organic material such as acrylic resin. Although not shown, the on-chip lens 17 is offset in the direction of the center of the optical axis as the image height of the pixel Px increases, so that a higher light collection efficiency can be obtained. can.
  • the angle of light incident on the pixel Px varies depending on the arrangement position of the pixel Px. Specifically, incident light substantially parallel to the optical axis is incident on the first pixel Px1 arranged at a position with a low image height. On the other hand, the angle of incident light with respect to the optical axis increases as the image height of the second pixel Px2 arranged at a position with a higher image height increases.
  • incident light L1 is light incident on the side surface of the gap 14 (the boundary with the color filter 13).
  • the incident light L1 is reflected at the boundary between the color filter 13 and the air gap 14 (reflected light L3 in FIG. 3), and thus is received by the original photodiode PD. As a result, the light receiving sensitivity is improved. Also, if the incident light L1 travels straight without being reflected at the boundary between the color filter 13 and the gap 14 (transmitted light L4 in FIG. 3), it is received by the photodiode PD of the adjacent pixel Px, which should not be received. In this case, color mixture occurs in which the incident light L1 is detected as a noise component.
  • the incident light L2 is incident on the light shielding film 15 formed on the light incident side of the air gap 14 . If the incident light L2 is reflected at the boundary between the on-chip lens 17 and the filter layer 12 (reflected light L5 in FIG. 3), it causes flare. Also, if the incident light L2 goes straight without being reflected at the boundary between the on-chip lens 17 and the filter layer 12 (transmitted light L6 in FIG. 3), it does not pass through the color filter 13 and is received by the photodiode PD. . In this case, the incident light L2 will be detected as a noise component.
  • the light shielding film 15 By forming the light shielding film 15 above the air gap 14, the reflection and transmission of the light incident between the pixels Px such as the incident light L2 is suppressed, thereby suppressing the occurrence of flare and noise components. can be done.
  • the same effect can be obtained by forming the light shielding film 15 under the gap 14, that is, on the side opposite to the light incident side. Since it is possible to absorb the incident light L2 at a point before it causes a strong reflection or the like, it is more suitable for suppressing the generation of noise or the like.
  • a well region, an n-type semiconductor region, and the like are formed in the semiconductor substrate 10, and the wiring layer 11 is formed (see FIG. 4).
  • an insulating layer 16 is formed on the back side of the semiconductor substrate 10 (see FIG. 5). Formation of the insulating layer 16 can be achieved by using, for example, CVD (Chemical Vapor Deposition).
  • the color filter 13 is arranged on the back side of the insulating layer 16 (see FIG. 6).
  • the color filters 13 are arranged adjacent to each other with a gap therebetween.
  • a resist 18 is applied so as to enter the gaps between the color filters 13 and cover the back surfaces of the color filters 13 (see FIG. 7). At this time, the resist 18 is applied so that the height of the surface of the resist 18 in the gap between the color filters 13 coincides with the height of the surface of the color filter 13 .
  • the resist 18 may be thinly applied to the surface of the color filter 13 so that the resist 18 in the gap portion is formed in the concave portion.
  • a reticle 19 having openings is used to irradiate only the resist 18 that has entered the gaps between the color filters 13 (see FIG. 8).
  • a curing phenomenon occurs only in the vicinity of the surface irradiated with light.
  • the cured resist 18 remains as the light shielding film 15 (see FIG. 9).
  • the reticle 19 also has openings that allow light to be applied to pixel regions (for example, dummy pixel regions) and wiring regions arranged in the outer periphery of the pixel array section 2 .
  • the light-shielding film 15 is also formed in the dummy pixel area and the wiring area, so that the incident light is less likely to be reflected in the area outside the effective pixel area of the pixel array section 2, and the occurrence of flare is more strongly prevented. can do.
  • the on-chip lens 17 is arranged on the back surface of the color filter 13 (see FIG. 10).
  • FIG. 11 shows the configuration of a solid-state imaging device 500 as a conventional example.
  • the solid-state imaging device 500 only gaps 14 are formed between the color filters 13.
  • the structure is such that the light shielding film 15 is removed from the solid-state imaging device 1 of the first embodiment.
  • the incident light L2 is, as shown in FIG. 12, incident with an inclination of 20 degrees ( ⁇ in the figure) with respect to the optical axis.
  • the output of the pixel PxA, into which the transmitted light L6 is incident when the incident light L2 is incident, and the output of the adjacent pixel PxB are used. Specifically, by multiplying the value obtained by dividing the output of the pixel PxA by the output of the pixel PxB by 100, the light amount of the transmitted light L6 is estimated.
  • FIG. 13 shows simulation results. As shown in the figure, the value calculated for the solid-state imaging device 500 that does not have the light shielding film 15 is slightly less than 35%. On the other hand, the value calculated for the solid-state imaging device 1 having the light shielding film 15 is slightly less than 33%. Therefore, it can be seen that the solid-state imaging device 1 according to the present embodiment has a higher effect of suppressing color mixture.
  • the incident light L2 is parallel to the optical axis as shown in FIG.
  • the simulation result is obtained by multiplying the value obtained by dividing the light amount of the reflected light L5 by the light amount of the incident light L2 by 100.
  • FIG. 15 shows simulation results. As shown in the figure, the value calculated for the solid-state imaging device 500 that does not have the light shielding film 15 is 3.6% or more. On the other hand, the value calculated for the solid-state imaging device 1 having the light shielding film 15 is a little over 3.4%. Therefore, it can be seen that the solid-state imaging device 1 according to the present embodiment has a smaller component of the reflected light L5 and effectively suppresses the flare.
  • the configuration of the solid-state imaging device 600 is shown in FIG. In the solid-state imaging device 500, the gaps between the color filters 13 are formed only by the black negative resist 601. As shown in FIG.
  • the incident light L1 is incident with an inclination of 20 degrees (.theta. in the drawing) with respect to the optical axis.
  • the output of the pixel PxB, on which the reflected light L3 that is reflected in the gap 14 when the incident light L1 is incident is incident is divided by the light amount of the incident light L1, and the result is multiplied by 100.
  • FIG. 18 shows simulation results. As shown in the figure, the value calculated for the solid-state imaging device 600 in which the air gap 14 is not formed is slightly less than 71%. On the other hand, the value calculated for the solid-state imaging device 1 in which the void 14 is formed is a little over 75%. Therefore, it can be seen that the solid-state imaging device 1 in the first embodiment has more components of the reflected light L3, and the utilization efficiency of the incident light L1 is improved. Moreover, since the reflectance is high, the component of the transmitted light L4 to the adjacent pixel PxA is reduced, and a high color mixture suppression effect can be obtained.
  • the gap 14 has a tapered shape.
  • tapered shape includes both a forward tapered shape and a reverse tapered shape when viewed from the light incident side.
  • FIG. 19 shows an example of the forward tapered void 14 .
  • the forward tapered air gap 14 is configured such that the incident light L1 incident on the side surface of the air gap 14 is reflected toward the photodiode PD that is to receive the incident light L1. (reflected light L3).
  • the photodiode PD can receive the incident light L1 that is difficult to enter the photodiode PD, thereby improving the light utilization efficiency and the light receiving sensitivity.
  • FIG. 20 shows an example of an inversely tapered void 14 .
  • the inversely tapered air gap 14 reflects incident light L1 incident on the side surface of the air gap 14, which is light angled with respect to the optical axis, toward the photodiode PD that should receive the incident light L1. (reflected light L3).
  • reflected light L3 As a result, light that would otherwise enter the photodiode PD of the adjacent pixel Px as transmitted light L4 that travels straight without being reflected at the boundary between the color filter 13 and the air gap 14 is caused to enter the photodiode PD of the original pixel Px. It is possible to suppress color mixture and improve sensitivity.
  • the air gap 14 has an inverse tapered shape, it is easy to cause total reflection even if the angle formed with respect to the optical axis is increased, and it is possible to suppress color mixture and improve sensitivity.
  • the forward tapered voids 14 and the reverse tapered voids 14 may be mixedly arranged on the same solid-state imaging device 1A.
  • the pixel Px located near the center of the optical axis that is, the pixel Px arranged near the center of the pixel array (or the first pixel Px1, the pixel Px arranged at a position where the image height is low)
  • the gap 14 is formed in a forward tapered shape, and the pixel Px at a position away from the center of the optical axis, that is, the pixel Px arranged at the outer peripheral part of the pixel array (or the second pixel Px2, arranged at a position with a high image height).
  • the gap 14 for the pixel Px may be formed in a reverse tapered shape.
  • Pixels Px having the forward tapered void 14 and the pixel Px having the reverse tapered void 14 may be mixedly arranged in one solid-state imaging device 1A.
  • the pixel Px having the gap 14 shown in the first embodiment is arranged between the pixel Px having the forward tapered gap 14 and the pixel Px having the reverse tapered gap 14, good.
  • the pixel Px (the third pixel Px3) arranged at a position with an intermediate image height is not exposed to incident light substantially parallel to the optical axis, and incident light having a slight angle to the optical axis is incident. be done.
  • the straight-shaped air gap 14 for such incident light, the light reflected at the boundary with the color filter 13 is more likely to be collected at the approximate center of the photodiode PD, so that the sensitivity can be preferably improved. be able to.
  • oblique incident light incident light with a shallow incident angle
  • incident light with a large angle with respect to the optical axis is incident on the pixel Px (second pixel Px2) arranged at a position with a high image height. Since the air gap 14 is formed in an inverse tapered shape, the light incident on the side surface of the air gap 14 is easily reflected back to the original pixel Px. Therefore, it is possible to improve the light-receiving sensitivity of the pixel Px and prevent color mixture.
  • the original pixel Px can be moved to the original pixel Px according to the arrangement position of the pixel Px.
  • An air gap 14 having a shape that easily reflects incident light is appropriately formed. Therefore, it is possible to improve the light receiving sensitivity and prevent color mixture.
  • one of the shapes of the void 14 arranged at the boundary between the third pixel Px3 and the second pixel Px2 is a straight shape and the other is a reverse tapered shape.
  • a region where the first pixel Px1 is arranged is defined as a first area Ar1, a region where the second pixel Px2 is arranged is defined as a second area Ar2, and a region where the third pixel Px3 is arranged is defined as a third area Ar3.
  • the example shown in FIG. 22 is an example in which a first area Ar1, a third area Ar3, and a second area Ar2 are arranged in order from the one closer to the center of the optical axis, which is the same as the arrangement example shown in FIG. By arranging them in this manner, an appropriate air gap 14 is provided according to the angle of incident light with respect to the optical axis, thereby preventing color mixture and improving sensitivity.
  • the example shown in FIG. 23 is an example in which the first area Ar1 and the second area Ar2 are arranged in order from the one closer to the center of the optical axis.
  • the example shown in FIG. 24 is an example in which the first area Ar1 and the third area Ar3 are arranged in order from the one closer to the center of the optical axis.
  • first area Ar1, the second area Ar2, and the third area Ar3 in FIGS. 22, 23, and 24 are rectangular areas, they are not limited to this, and may be substantially circular areas or substantially elliptical areas. may be defined as the region of
  • the cross-sectional shape of the gap 14 at the boundary between the first area Ar1 and the second area Ar2 is substantially parallelogram.
  • the tapered shape (including straight shape) of the gap 14 may be changed for each type of color filter 13 . This is because the longer the wavelength of the incident light, the less likely total reflection occurs at the boundary between the gap 14 and the color filter 13 .
  • FIG. 25 shows an example of the shape of the gaps 14 provided corresponding to the color filters 13R, 13G, and 13B arranged in the first area Ar1.
  • FIG. 25 shows that the color filters 13R, 13G, and 13B are arranged in the same pixel row for convenience of explanation, in the solid-state imaging device 1A, the color filters 13R and the color filters 13G and the pixel row where the color filter 13G and the color filter 13B are arranged.
  • the angle formed by the boundary between the color filter 13R and the air gap 14 and the direction of the optical axis is assumed to be ⁇ 1.
  • the angle between the boundary between the color filter 13G and the air gap 14 and the optical axis direction is ⁇ 2
  • the angle between the boundary between the color filter 13B and the air gap 14 and the optical axis direction is ⁇ 3.
  • the tapered shape of the air gap 14 is formed so that ⁇ 1 ⁇ 2 ⁇ 3 is established. That is, the angle of the tapered shape formed as the boundary between the color filter 13B and the gap 14 is maximized.
  • the incident light L1 collimated to the optical axis is incident on the side surface of the air gap 14 so that the incident angle of the color filter 13G is larger than that of the color filter 13R, and the color filter 13G is larger than the color filter 13G. 13B is made larger. Therefore, since the incident light L1 is reflected at an appropriate angle according to the wavelength of light, it is possible to more appropriately improve the light receiving sensitivity.
  • FIG. 26 shows an example of the shape of the gaps 14 provided corresponding to the color filters 13R, 13G, and 13B arranged in the second area Ar2.
  • the incident light L1 is assumed to be light inclined by 20 degrees with respect to the optical axis.
  • the angle formed by the boundary between the color filter 13R and the gap 14 and the incident light L1 is assumed to be ⁇ 4.
  • the angle between the boundary between the color filter 13G and the gap 14 and the incident light L1 is ⁇ 5
  • the angle between the boundary between the color filter 13B and the gap 14 and the incident light L1 is ⁇ 6.
  • the tapered shape of the air gap 14 is formed so that ⁇ 4 ⁇ 5 ⁇ 6 is established. That is, the angle of the tapered shape formed as the boundary between the color filter 13R and the gap 14 is maximized.
  • the incident angle of the color filter 13G is larger than that of the color filter 13R, and the angle of incidence is greater than that of the color filter 13G.
  • the color filter 13B is made larger. Therefore, since the incident light L1 is reflected at an appropriate angle according to the wavelength of light, it is possible to more appropriately improve the light receiving sensitivity.
  • the tapered shape of the gap 14 may have straight corners as shown in the drawings so far, but may have rounded corners in consideration of ease of manufacture. .
  • the corners 20 of the air gap 14, specifically, the corners 20 of the boundary portion of the insulating layer 16 in the air gap 14, are rounded.
  • the processing for forming the corners 20 to have an acute angle is not required. Manufacturing can be done.
  • the degree of difficulty in manufacturing the solid-state imaging device 1A can be lowered, and the cost of the manufacturing apparatus can be reduced.
  • the light used for forming the light shielding film 15 and the color filter 13 is, for example, i-line (spectral line of mercury with a wavelength of 365 nm).
  • i-line spectral line of mercury with a wavelength of 365 nm.
  • a solid-state imaging device 1B according to the third embodiment has a metal film 21 formed between an air gap 14 and an insulating layer 16 .
  • Fig. 28 shows the specific structure.
  • the solid-state imaging device 1B is formed by stacking a semiconductor substrate 10, a wiring layer 11, a filter layer 12, and an on-chip lens 17, and an insulating layer 16 is formed between the semiconductor substrate 10 and the filter layer 12.
  • Color filters 13 are spaced apart from each other in the filter layer 12 . In the space between the color filters 13 , a gap 14 , a light shielding film 15 provided on the light incident side of the gap 14 , and It has a light shielding film 15 and a metal film 21 provided on the opposite side.
  • the incident light L1 is totally reflected by the side surface of the air gap 14 and enters the photodiode PD of the pixel Px that should receive the incident light L1. However, part of the incident light L1 may travel straight toward the photodiode PD of the adjacent pixel Px. This is because the boundary between the air gap 14 and the color filter 13 may not be perfectly straight.
  • the metal film 21 plays a role of absorbing the incident light L1 traveling straight. As a result, the incident light L1 is prevented from being received by the pixel Px adjacent to the pixel Px that should originally be received, and color mixture can be further suppressed.
  • the incident light L2 is absorbed by the light shielding film 15 to reduce the component of the reflected light L5, thereby suppressing the occurrence of flare.
  • part of the incident light L2 may travel straight through the light shielding film 15 and be received by the photodiode PD without passing through the color filter 13 . This is because the thickness of the light shielding film 15 may not be completely uniform.
  • the metal film 21 plays a role of absorbing the incident light L2 traveling straight.
  • the incident light L2 is prevented from being received by the photodiode PD, and color mixture and noise components can be suppressed more effectively.
  • the metal film 21 is made of, for example, tungsten (W). Also, the metal film 21 may have a multi-layered structure, in which case tungsten may be placed on the gap 14 side and titanium (Ti), titanium nitride (TiN), or the like may be placed on the insulating layer 16 side. good. Alternatively, a single layer of titanium or titanium nitride may be used. The layer of titanium or titanium nitride is, for example, a layer provided to improve adhesion with the insulating layer 16 . If the metal film 21 is composed of a single layer of tungsten, titanium, or titanium nitride, it is possible to reduce the number of manufacturing processes and the cost.
  • a method for manufacturing the solid-state imaging device 1B will be described with reference to the attached drawings. Note that the steps up to the intermediate steps are the same as those of the solid-state imaging device 1 in the first embodiment, so description thereof will be omitted.
  • the metal layer 22 in the form of a metal film is formed on the surface of the insulating layer 16. (See Figure 30).
  • a resist 23 is applied to the portion where the metal film 21 is arranged, that is, the portion other than the arrangement region of the color filter 13 (see FIG. 31).
  • the metal film 21 is etched using the resist 23 as a mask (see FIG. 32).
  • the metal layer 22 in the region where the color filter 13 is arranged can be removed by dry etching to leave only the portion to be formed as the metal film 21 .
  • the color filter 13 is placed on the portion where the metal layer 22 has been removed (see FIG. 33).
  • the subsequent steps are the same as the steps shown in FIGS. 7 to 10, except that the metal film 21 is formed, so description thereof will be omitted.
  • a solid-state imaging device 1C according to the fourth embodiment has a light shielding film 15C formed so as to extend to the layer where the on-chip lens 17 is formed.
  • FIG. 1 The light-shielding film 15 ⁇ /b>C has a shape in which the end on the light incident side extends to the light incident side instead of the surface position of the color filter 13 . That is, the upper end portion 24 of the light shielding film 15C is arranged on the light incident side of the boundary between the on-chip lens 17 and the color filter 13 .
  • a method for manufacturing the solid-state imaging device 1C will be described. 4 to 6 are the same as those in the above example, so description thereof will be omitted. Subsequently, as shown in FIG. 34, a resist 18 is applied so that the upper end portion 24 of the light shielding film 15C extends toward the light incident side from the end portion of the color filter 13 on the light incident side.
  • a reticle 19 is used to partially harden the resist 18 to form a light shielding film 15C (see FIG. 8). After that, instead of leaving the light shielding film 15 so as to be flush with the color filter 13 as shown in FIG. Thus, the light shielding film 15C shown in FIG. 35 is formed.
  • the light-shielding film 15C By forming the light-shielding film 15C to extend toward the on-chip lens 17 side from the color filter 13, it is possible to obtain the effect of suppressing color mixture between the on-chip lenses 17, so that the light incident on the photodiode PD becomes more monochromatic. of light can be obtained, and a high effect of suppressing color mixture can be obtained as a whole.
  • the solid-state imaging device 1 (1A, 1B, 1C) described above is used in various devices.
  • An imaging device 100 including the solid-state imaging device 1 will be described as an example.
  • the imaging apparatus 100 includes a lens system 101, solid-state imaging devices 1 (1A, 1B, 1C), an image processing unit 103, a buffer memory 104, a recording control unit 105, a display unit 106, and a camera control unit 107. , a memory unit 108 , an operation unit 109 , a driver unit 110 , a communication unit 111 and a power supply unit 112 .
  • the lens system 101 includes various lenses such as an incident end lens, a zoom lens, a focus lens, and a condenser lens, as well as a lens and an iris ( It is configured with an iris mechanism that controls exposure by adjusting the opening amount of a diaphragm, and a shutter unit such as a focal plane shutter.
  • the lens system 101 is an optical system element into which light is incident, and is appropriately arranged in a lens barrel (not shown) or inside the housing of the imaging apparatus 100 .
  • the solid-state imaging device 1 (1A, 1B, 1C) is configured with a pixel array section 2.
  • the solid-state imaging device 1 receives light incident from the lens system 101 and outputs pixel signals corresponding to the amount of received light.
  • the solid-state imaging device 1 is configured with a signal processing section 7 that generates captured image signals as digital data based on pixel signals obtained from the pixel array section 2 (see FIG. 1).
  • the captured image signal is output to the image processing unit 103 and camera control unit 107 .
  • the image processing unit 103 is configured as an image processing processor such as a DSP (Digital Signal Processor).
  • the image processing unit 103 performs various kinds of signal processing on the digital signal (captured image signal) output from the solid-state imaging device 1, that is, RAW image data.
  • the image processing unit 103 performs lens correction, noise reduction, synchronization processing, YC generation processing, color reproduction/sharpness processing, and the like.
  • color separation processing is performed so that the image data for each pixel has all color components of R (red), G (green), and B (blue).
  • demosaic processing is performed as color separation processing.
  • a luminance (Y) signal and a color (C) signal are generated (separated) from R, G, and B image data.
  • processing for adjusting gradation, saturation, tone, contrast, etc. is performed as so-called image creation.
  • the image processing unit 103 performs the above-described signal processing, generally called development processing, to generate image data in a predetermined format.
  • resolution conversion and file formation processing may be performed.
  • file forming process for example, compression encoding for recording and communication, formatting, generation and addition of metadata are performed on the image data to generate a file for recording and communication.
  • still image files are generated in formats such as JPEG (Joint Photographic Experts Group), TIFF (Tagged Image File Format), GIF (Graphics Interchange Format), and HEIF (High Efficiency Image File Format). It is also conceivable to generate an image file in the MP4 format, which is used for recording MPEG-4 compliant moving images and audio. Note that the image processing unit 103 may generate an image file of RAW image data that has not been developed.
  • the buffer memory 104 is formed of, for example, a D-RAM (Dynamic Random Access Memory).
  • the buffer memory 104 is used for temporary storage of image data during the above-described development processing and the like performed by the image processing unit 103 .
  • the buffer memory 104 may be a memory chip separate from the image processing unit 103 or may be configured as an internal memory area of a DSP or the like that constitutes the image processing unit 103 .
  • the recording control unit 105 performs recording and reproduction on a recording medium such as a non-volatile memory.
  • the recording control unit 105 performs processing for recording image files such as moving image data and still image data on a recording medium, for example.
  • Various actual forms of the recording control unit 105 are conceivable.
  • the recording control unit 105 may be configured by including a flash memory incorporated in the imaging device 100 and its writing circuit and reading circuit.
  • the recording control unit 105 may be configured by a card recording/reproducing unit that performs recording/reproducing access to a recording medium detachable from the imaging apparatus 100, such as a memory card (portable flash memory or the like).
  • the recording control unit 105 may be implemented as an HDD (Hard Disk Drive) or the like as a form incorporated in the imaging apparatus 100 .
  • HDD Hard Disk Drive
  • a display unit 106 is a display unit that provides various displays to the user, and includes a rear monitor provided on the rear surface of the camera housing and an EVF (Electric Viewfinder) monitor provided on the top of the housing.
  • the display unit 106 executes various displays on the display screen based on instructions from the camera control unit 107 .
  • the display unit 106 displays a reproduced image of image data read from the recording medium by the recording control unit 105 .
  • the display unit 106 is supplied with image data (captured image data) of a captured image whose resolution has been converted for display by the image processing unit 103. Display may be performed based on image data.
  • a so-called through image (monitoring image of the subject), which is an image captured while confirming the composition or recording a moving image, is displayed.
  • the display unit 106 displays various operation menus, icons, messages, etc., that is, as a GUI (Graphical User Interface) on the screen based on an instruction from the camera control unit 107 .
  • GUI Graphic User Interface
  • the camera control unit 107 is configured by a microcomputer having a CPU (Central Processing Unit).
  • the memory unit 108 stores data and the like used by the camera control unit 107 for processing.
  • a ROM Read Only Memory
  • RAM Random Access Memory
  • flash memory and the like are comprehensively illustrated.
  • the memory unit 108 may be a memory area built into the microcomputer chip as the camera control unit 107, or may be configured by a separate memory chip.
  • a camera control unit 107 controls the entire imaging apparatus 100 by executing a program stored in the ROM of the memory unit 108, flash memory, or the like.
  • the camera control unit 107 controls the shutter speed of the solid-state imaging device 1, instructs various signal processing in the image processing unit 103, performs an imaging operation and an image recording operation in response to a user's operation, reproduces a recorded image file, It controls the operation of each unit necessary for controlling the zoom lens, focus lens, iris mechanism, etc. as the lens system 101 .
  • the camera control unit 107 also performs processing for detecting operation information from the operation unit 109 as user interface operations, and display control of each display unit such as the rear monitor and the EVF monitor 5a.
  • the camera control unit 107 also controls the communication operation with an external device by the communication unit 111 .
  • a RAM in the memory unit 108 is used as a work area for the CPU of the camera control unit 107 to perform various data processing, and is used for temporary storage of data, programs, and the like.
  • the ROM and flash memory (non-volatile memory) in the memory unit 108 are used to store an OS (Operating System) for the CPU to control each unit and content files such as image files.
  • the ROM and flash memory in the memory unit 108 are used to store application programs for various operations of the camera control unit 107 and image processing unit 103, firmware, various setting information, and the like.
  • the operation unit 109 includes operators provided at various locations on the camera housing, a rear monitor equipped with a touch panel function, and the like.
  • the driver unit 110 includes, for example, a motor driver for the zoom lens drive motor, a motor driver for the focus lens drive motor, a motor driver for the iris mechanism motor, and the like. These motor drivers apply drive currents according to instructions from the camera control unit 107 to the corresponding drivers to move the focus lens and the zoom lens, open and close the aperture blades of the iris mechanism, and the like.
  • the communication unit 111 is a communication module for performing wired communication and wireless communication.
  • the power supply unit 112 generates a power supply voltage (Vcc) necessary for each unit from, for example, a battery housed inside the camera housing, and supplies it as an operating voltage.
  • Vcc power supply voltage
  • the power supply unit 112 may include a circuit for charging the battery and a circuit for generating the power supply voltage Vcc using a DC voltage converted by an AC adapter connected to a commercial AC power supply as a power source. good.
  • the imaging device 100 including the solid-state imaging device 1 it is possible to improve the sensitivity of the imaging device 100 and generate image data (image file, etc.) with noise suppressed.
  • the configuration having the metal film 21 described in the third embodiment and the configuration having the light shielding film 15C described in the fourth embodiment can also be applied to the solid-state imaging device ( 1, 1A, 1B, 1C).
  • the above-described color filter 13 and the structures therebetween can be applied.
  • the back-illuminated solid-state imaging device 1 was taken as an example, but the present technology is also applicable to a front-illuminated solid-state imaging device.
  • the solid-state imaging device 1 (1A, 1B, 1C) includes a photoelectric conversion section (photodiode PD) that performs photoelectric conversion, and light that is formed on the light incident side of the photoelectric conversion section and received by the photoelectric conversion section. and color filters 13 (13R, 13G, 13B) that selectively transmit light, and a gap 14 and a light shielding film 15 (15C) formed on the light incident side of the gap 14 between the color filters 13. is.
  • the light shielding film 15 above the air gap 14 blocks the light incident on the boundary portion of the color filter 13 from above.
  • the light shielding film 15 (15C) in the solid-state imaging device 1 (1A, 1B, 1C) may be formed of a black negative resist (resist 18).
  • resist 18 a black negative resist
  • the light can be suitably blocked, and the effect of suppressing color mixture can be enhanced.
  • the light shielding film 15 (15C) in the solid-state imaging device 1 (1A, 1B, 1C) is formed of a negative resist (resist 18) having light shielding properties or wavelength selectivity.
  • the light-shielding film 15 may be a negative resist having wavelength selectivity instead of a negative resist having a light-shielding property.
  • the light source irradiates light other than blue light
  • the light shielding film 15 by forming the light shielding film 15 with a negative resist that allows only blue light to pass through, the light to be received does not pass through the light shielding film 15, thereby suppressing color mixture. can be done.
  • voids 14 in solid-state imaging device 1 may be tapered.
  • tapered shape includes both forward tapered shape and reverse tapered shape.
  • the tapered shape of the gap 14 in the solid-state imaging device 1 (1A, 1B, 1C) is forward tapered when viewed from the light incident side. good too.
  • Light substantially parallel to the optical axis is incident on the pixel Px arranged at a position where the image height is low. , 13G, 13B) can be appropriately guided to the photoelectric conversion portion (photodiode PD).
  • the photoelectric conversion portion photodiode PD
  • the tapered shape of the gap 14 in the solid-state imaging device 1 (1A, 1B, 1C) is a reverse tapered shape when viewed from the light incident side. good too.
  • the pixel Px arranged at a position where the image height is high light oblique to the optical axis is incident. The reflected light is likely to be reflected back to the original pixel Px. Therefore, it is possible to improve the light-receiving sensitivity of the pixel Px and prevent color mixture.
  • a first gap having a forward tapered shape when viewed from the light incident side (Gap 14 shown in FIG. 19) and a second gap (Gap 14 shown in FIG. 20) having an inversely tapered shape when viewed from the light incident side are provided. It may be arranged at a position away from the high center. Thereby, the gap 14 having a shape that easily reflects the incident light to the original pixel Px is appropriately formed according to the arrangement position of the pixel Px. Therefore, it is possible to improve the light receiving sensitivity and prevent color mixture.
  • the tapered shape of the gap 14 in the solid-state imaging device 1 (1A, 1B, 1C) is formed such that the corners 20 are rounded. may be This eliminates the need for processing for forming the corners 20 at an acute angle, so that the solid-state imaging device 1 can be manufactured without increasing the number of man-hours for forming the gaps 14 . Moreover, it becomes possible to reduce the cost of the manufacturing apparatus for manufacturing the solid-state imaging device 1 .
  • the metal film 21 is formed between the gap 14 and the photoelectric conversion portion (photodiode PD) in the solid-state imaging device 1 (1A, 1B, 1C).
  • photoelectric conversion portion photodiode PD
  • the metal film 21 is formed between the gap 14 and the photoelectric conversion portion (photodiode PD) in the solid-state imaging device 1 (1A, 1B, 1C).
  • the color filter 13 (13R, 13G, 13B) is arranged on the light incident side.
  • the on-chip lens 17 may be provided, and the upper end portion 24 of the light shielding film 15C may be arranged on the light incident side of the boundary between the on-chip lens 17 and the color filter 13 .
  • color mixing between the on-chip lenses 17 can be suppressed, and a high color mixing effect can be obtained as a whole.
  • the imaging apparatus 100 as an electronic device includes an optical system element (lens system 101) into which light is incident, and receives the light incident from the optical system element and measures the amount of received light. and a solid-state imaging device 1 (1A, 1B, 1C) that outputs pixel signals corresponding to the solid-state imaging device. and a signal processing unit 7 for performing signal processing on pixel signals. , a gap 14 and a light-shielding film 15 (15C) are formed on the light incident side of the gap 14.
  • FIG. As such an imaging device 100, various types of electronic devices such as a smartphone having a camera function can be conceived as well as cameras.
  • This technology> (1) a photoelectric conversion unit that performs photoelectric conversion; a color filter that is formed on the light incident side of the photoelectric conversion unit and selectively transmits light received by the photoelectric conversion unit; A solid-state imaging device, wherein a gap and a light-shielding film are formed on a light incident side of the gap between the color filters. (2) The solid-state imaging device according to (1), wherein the light shielding film is formed of a black negative resist. (3) The solid-state imaging device according to any one of (1) to (2) above, wherein the light shielding film is formed of a negative resist having light shielding properties or wavelength selectivity. (4) The solid-state imaging device according to any one of (1) to (3), wherein at least part of the gap is tapered.
  • the solid-state imaging device according to (4), wherein the tapered shape is a forward tapered shape when viewed from the light incident side.
  • the solid-state imaging device according to (4), wherein the tapered shape is a reverse tapered shape when viewed from the light incident side.
  • As the gap a first gap having a forward tapered shape when viewed from the light incident side and a second gap having a reverse tapered shape when viewed from the light incident side are provided, The solid-state imaging device according to (4) above, wherein the second gap is arranged at a position farther from the center of image height than the first gap.
  • the solid-state imaging device is a photoelectric conversion unit that performs photoelectric conversion; a color filter that is formed on the light incident side of the photoelectric conversion unit and selectively transmits light received by the photoelectric conversion unit; a signal processing unit that performs signal processing on the pixel signal;
  • An electronic device comprising: an air gap and a light-shielding film formed on a light incident side of the air gap between the color filters.

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  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
PCT/JP2023/000103 2022-02-03 2023-01-05 固体撮像素子、電子機器 Ceased WO2023149154A1 (ja)

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US18/727,183 US20250113637A1 (en) 2022-02-03 2023-01-05 Solid-state imaging element and electronic device
EP23749471.1A EP4475188A4 (en) 2022-02-03 2023-01-05 SOLID-STATE IMAGING ELEMENT AND ELECTRONIC DEVICE
CN202380015411.5A CN118435353A (zh) 2022-02-03 2023-01-05 固态成像元件和电子设备
DE112023000807.8T DE112023000807T5 (de) 2022-02-03 2023-01-05 Festkörperbildgebungselement und elektronische einrichtung
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US20250113637A1 (en) 2025-04-03
DE112023000807T5 (de) 2024-11-28
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EP4475188A4 (en) 2025-08-27
KR20240138083A (ko) 2024-09-20

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