DE112023000807T5 - Festkörperbildgebungselement und elektronische einrichtung - Google Patents

Festkörperbildgebungselement und elektronische einrichtung Download PDF

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Publication number
DE112023000807T5
DE112023000807T5 DE112023000807.8T DE112023000807T DE112023000807T5 DE 112023000807 T5 DE112023000807 T5 DE 112023000807T5 DE 112023000807 T DE112023000807 T DE 112023000807T DE 112023000807 T5 DE112023000807 T5 DE 112023000807T5
Authority
DE
Germany
Prior art keywords
light
cavity
solid
state imaging
imaging element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE112023000807.8T
Other languages
German (de)
English (en)
Inventor
Hirotaka Kutsukake
Ryo Takahashi
Kosuke Ozaki
Masashi OHURA
Suguru Moriyama
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of DE112023000807T5 publication Critical patent/DE112023000807T5/de
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
DE112023000807.8T 2022-02-03 2023-01-05 Festkörperbildgebungselement und elektronische einrichtung Pending DE112023000807T5 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-015503 2022-02-03
JP2022015503 2022-02-03
PCT/JP2023/000103 WO2023149154A1 (ja) 2022-02-03 2023-01-05 固体撮像素子、電子機器

Publications (1)

Publication Number Publication Date
DE112023000807T5 true DE112023000807T5 (de) 2024-11-28

Family

ID=87552276

Family Applications (1)

Application Number Title Priority Date Filing Date
DE112023000807.8T Pending DE112023000807T5 (de) 2022-02-03 2023-01-05 Festkörperbildgebungselement und elektronische einrichtung

Country Status (8)

Country Link
US (1) US20250113637A1 (cg-RX-API-DMAC7.html)
EP (1) EP4475188A4 (cg-RX-API-DMAC7.html)
JP (1) JPWO2023149154A1 (cg-RX-API-DMAC7.html)
KR (1) KR20240138083A (cg-RX-API-DMAC7.html)
CN (1) CN118435353A (cg-RX-API-DMAC7.html)
DE (1) DE112023000807T5 (cg-RX-API-DMAC7.html)
TW (1) TW202333488A (cg-RX-API-DMAC7.html)
WO (1) WO2023149154A1 (cg-RX-API-DMAC7.html)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758306A (ja) * 1993-08-11 1995-03-03 Nec Corp 光センサ素子
JP2001237405A (ja) * 2000-02-24 2001-08-31 Victor Co Of Japan Ltd 固体撮像装置および固体撮像装置の製造方法
JP2009164385A (ja) * 2008-01-08 2009-07-23 Fujifilm Corp 裏面照射型撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
JP6192379B2 (ja) * 2013-06-18 2017-09-06 キヤノン株式会社 固体撮像装置
JP6262496B2 (ja) * 2013-11-08 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20220068991A1 (en) * 2018-12-27 2022-03-03 Sony Semiconductor Solutions Corporation Imaging element and manufacturing method of imaging element
KR102691365B1 (ko) * 2019-09-02 2024-08-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US20220406832A1 (en) * 2019-11-21 2022-12-22 Sony Semiconductor Solutions Corporation Image sensor and imaging device

Also Published As

Publication number Publication date
EP4475188A1 (en) 2024-12-11
JPWO2023149154A1 (cg-RX-API-DMAC7.html) 2023-08-10
TW202333488A (zh) 2023-08-16
US20250113637A1 (en) 2025-04-03
WO2023149154A1 (ja) 2023-08-10
CN118435353A (zh) 2024-08-02
EP4475188A4 (en) 2025-08-27
KR20240138083A (ko) 2024-09-20

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R079 Amendment of ipc main class

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Ipc: H10F0039180000