CN118435353A - 固态成像元件和电子设备 - Google Patents

固态成像元件和电子设备 Download PDF

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Publication number
CN118435353A
CN118435353A CN202380015411.5A CN202380015411A CN118435353A CN 118435353 A CN118435353 A CN 118435353A CN 202380015411 A CN202380015411 A CN 202380015411A CN 118435353 A CN118435353 A CN 118435353A
Authority
CN
China
Prior art keywords
light
solid
state imaging
imaging element
incident
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202380015411.5A
Other languages
English (en)
Chinese (zh)
Inventor
沓挂博高
高桥了
尾崎光祐
大浦雅史
森山卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Semiconductor Solutions Corp
Original Assignee
Sony Semiconductor Solutions Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Semiconductor Solutions Corp filed Critical Sony Semiconductor Solutions Corp
Publication of CN118435353A publication Critical patent/CN118435353A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
CN202380015411.5A 2022-02-03 2023-01-05 固态成像元件和电子设备 Pending CN118435353A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022-015503 2022-02-03
JP2022015503 2022-02-03
PCT/JP2023/000103 WO2023149154A1 (ja) 2022-02-03 2023-01-05 固体撮像素子、電子機器

Publications (1)

Publication Number Publication Date
CN118435353A true CN118435353A (zh) 2024-08-02

Family

ID=87552276

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202380015411.5A Pending CN118435353A (zh) 2022-02-03 2023-01-05 固态成像元件和电子设备

Country Status (8)

Country Link
US (1) US20250113637A1 (cg-RX-API-DMAC7.html)
EP (1) EP4475188A4 (cg-RX-API-DMAC7.html)
JP (1) JPWO2023149154A1 (cg-RX-API-DMAC7.html)
KR (1) KR20240138083A (cg-RX-API-DMAC7.html)
CN (1) CN118435353A (cg-RX-API-DMAC7.html)
DE (1) DE112023000807T5 (cg-RX-API-DMAC7.html)
TW (1) TW202333488A (cg-RX-API-DMAC7.html)
WO (1) WO2023149154A1 (cg-RX-API-DMAC7.html)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758306A (ja) * 1993-08-11 1995-03-03 Nec Corp 光センサ素子
JP2001237405A (ja) * 2000-02-24 2001-08-31 Victor Co Of Japan Ltd 固体撮像装置および固体撮像装置の製造方法
JP2009164385A (ja) * 2008-01-08 2009-07-23 Fujifilm Corp 裏面照射型撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
JP6192379B2 (ja) * 2013-06-18 2017-09-06 キヤノン株式会社 固体撮像装置
JP6262496B2 (ja) * 2013-11-08 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20220068991A1 (en) * 2018-12-27 2022-03-03 Sony Semiconductor Solutions Corporation Imaging element and manufacturing method of imaging element
KR102691365B1 (ko) * 2019-09-02 2024-08-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US20220406832A1 (en) * 2019-11-21 2022-12-22 Sony Semiconductor Solutions Corporation Image sensor and imaging device

Also Published As

Publication number Publication date
EP4475188A1 (en) 2024-12-11
JPWO2023149154A1 (cg-RX-API-DMAC7.html) 2023-08-10
TW202333488A (zh) 2023-08-16
US20250113637A1 (en) 2025-04-03
DE112023000807T5 (de) 2024-11-28
WO2023149154A1 (ja) 2023-08-10
EP4475188A4 (en) 2025-08-27
KR20240138083A (ko) 2024-09-20

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