KR20240138083A - 고체 촬상 소자, 전자 기기 - Google Patents

고체 촬상 소자, 전자 기기 Download PDF

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Publication number
KR20240138083A
KR20240138083A KR1020247026518A KR20247026518A KR20240138083A KR 20240138083 A KR20240138083 A KR 20240138083A KR 1020247026518 A KR1020247026518 A KR 1020247026518A KR 20247026518 A KR20247026518 A KR 20247026518A KR 20240138083 A KR20240138083 A KR 20240138083A
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KR
South Korea
Prior art keywords
light
gap
state imaging
pixel
solid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
KR1020247026518A
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English (en)
Korean (ko)
Inventor
히로타카 구츠카케
료 다카하시
고스케 오자키
마사시 오우라
스구루 모리야마
Original Assignee
소니 세미컨덕터 솔루션즈 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 소니 세미컨덕터 솔루션즈 가부시키가이샤 filed Critical 소니 세미컨덕터 솔루션즈 가부시키가이샤
Publication of KR20240138083A publication Critical patent/KR20240138083A/ko
Pending legal-status Critical Current

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Classifications

    • H01L27/14623—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H01L27/14621—
    • H01L27/14625—
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
KR1020247026518A 2022-02-03 2023-01-05 고체 촬상 소자, 전자 기기 Pending KR20240138083A (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022015503 2022-02-03
JPJP-P-2022-015503 2022-02-03
PCT/JP2023/000103 WO2023149154A1 (ja) 2022-02-03 2023-01-05 固体撮像素子、電子機器

Publications (1)

Publication Number Publication Date
KR20240138083A true KR20240138083A (ko) 2024-09-20

Family

ID=87552276

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020247026518A Pending KR20240138083A (ko) 2022-02-03 2023-01-05 고체 촬상 소자, 전자 기기

Country Status (8)

Country Link
US (1) US20250113637A1 (cg-RX-API-DMAC7.html)
EP (1) EP4475188A4 (cg-RX-API-DMAC7.html)
JP (1) JPWO2023149154A1 (cg-RX-API-DMAC7.html)
KR (1) KR20240138083A (cg-RX-API-DMAC7.html)
CN (1) CN118435353A (cg-RX-API-DMAC7.html)
DE (1) DE112023000807T5 (cg-RX-API-DMAC7.html)
TW (1) TW202333488A (cg-RX-API-DMAC7.html)
WO (1) WO2023149154A1 (cg-RX-API-DMAC7.html)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190157329A1 (en) 2017-11-20 2019-05-23 Samsung Electronics Co., Ltd. Image sensor and method of fabricating the same

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758306A (ja) * 1993-08-11 1995-03-03 Nec Corp 光センサ素子
JP2001237405A (ja) * 2000-02-24 2001-08-31 Victor Co Of Japan Ltd 固体撮像装置および固体撮像装置の製造方法
JP2009164385A (ja) * 2008-01-08 2009-07-23 Fujifilm Corp 裏面照射型撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
JP6192379B2 (ja) * 2013-06-18 2017-09-06 キヤノン株式会社 固体撮像装置
JP6262496B2 (ja) * 2013-11-08 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
US20220068991A1 (en) * 2018-12-27 2022-03-03 Sony Semiconductor Solutions Corporation Imaging element and manufacturing method of imaging element
KR102691365B1 (ko) * 2019-09-02 2024-08-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US20220406832A1 (en) * 2019-11-21 2022-12-22 Sony Semiconductor Solutions Corporation Image sensor and imaging device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190157329A1 (en) 2017-11-20 2019-05-23 Samsung Electronics Co., Ltd. Image sensor and method of fabricating the same

Also Published As

Publication number Publication date
EP4475188A1 (en) 2024-12-11
JPWO2023149154A1 (cg-RX-API-DMAC7.html) 2023-08-10
TW202333488A (zh) 2023-08-16
US20250113637A1 (en) 2025-04-03
DE112023000807T5 (de) 2024-11-28
WO2023149154A1 (ja) 2023-08-10
CN118435353A (zh) 2024-08-02
EP4475188A4 (en) 2025-08-27

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