TW202333488A - 固態攝像元件及電子機器 - Google Patents

固態攝像元件及電子機器 Download PDF

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Publication number
TW202333488A
TW202333488A TW111150098A TW111150098A TW202333488A TW 202333488 A TW202333488 A TW 202333488A TW 111150098 A TW111150098 A TW 111150098A TW 111150098 A TW111150098 A TW 111150098A TW 202333488 A TW202333488 A TW 202333488A
Authority
TW
Taiwan
Prior art keywords
light
solid
state imaging
gap
imaging element
Prior art date
Application number
TW111150098A
Other languages
English (en)
Chinese (zh)
Inventor
沓掛博高
高橋了
尾崎光祐
大浦雅史
森山卓
Original Assignee
日商索尼半導體解決方案公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商索尼半導體解決方案公司 filed Critical 日商索尼半導體解決方案公司
Publication of TW202333488A publication Critical patent/TW202333488A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
TW111150098A 2022-02-03 2022-12-27 固態攝像元件及電子機器 TW202333488A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022-015503 2022-02-03
JP2022015503 2022-02-03

Publications (1)

Publication Number Publication Date
TW202333488A true TW202333488A (zh) 2023-08-16

Family

ID=87552276

Family Applications (1)

Application Number Title Priority Date Filing Date
TW111150098A TW202333488A (zh) 2022-02-03 2022-12-27 固態攝像元件及電子機器

Country Status (8)

Country Link
US (1) US20250113637A1 (cg-RX-API-DMAC7.html)
EP (1) EP4475188A4 (cg-RX-API-DMAC7.html)
JP (1) JPWO2023149154A1 (cg-RX-API-DMAC7.html)
KR (1) KR20240138083A (cg-RX-API-DMAC7.html)
CN (1) CN118435353A (cg-RX-API-DMAC7.html)
DE (1) DE112023000807T5 (cg-RX-API-DMAC7.html)
TW (1) TW202333488A (cg-RX-API-DMAC7.html)
WO (1) WO2023149154A1 (cg-RX-API-DMAC7.html)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0758306A (ja) * 1993-08-11 1995-03-03 Nec Corp 光センサ素子
JP2001237405A (ja) * 2000-02-24 2001-08-31 Victor Co Of Japan Ltd 固体撮像装置および固体撮像装置の製造方法
JP2009164385A (ja) * 2008-01-08 2009-07-23 Fujifilm Corp 裏面照射型撮像素子
JP5430387B2 (ja) * 2009-12-22 2014-02-26 キヤノン株式会社 固体撮像装置及び固体撮像装置の製造方法
JP6192379B2 (ja) * 2013-06-18 2017-09-06 キヤノン株式会社 固体撮像装置
JP6262496B2 (ja) * 2013-11-08 2018-01-17 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
KR102506837B1 (ko) * 2017-11-20 2023-03-06 삼성전자주식회사 이미지 센서 및 그 제조 방법
US20220068991A1 (en) * 2018-12-27 2022-03-03 Sony Semiconductor Solutions Corporation Imaging element and manufacturing method of imaging element
KR102691365B1 (ko) * 2019-09-02 2024-08-05 에스케이하이닉스 주식회사 이미지 센싱 장치
US20220406832A1 (en) * 2019-11-21 2022-12-22 Sony Semiconductor Solutions Corporation Image sensor and imaging device

Also Published As

Publication number Publication date
EP4475188A1 (en) 2024-12-11
JPWO2023149154A1 (cg-RX-API-DMAC7.html) 2023-08-10
US20250113637A1 (en) 2025-04-03
DE112023000807T5 (de) 2024-11-28
WO2023149154A1 (ja) 2023-08-10
CN118435353A (zh) 2024-08-02
EP4475188A4 (en) 2025-08-27
KR20240138083A (ko) 2024-09-20

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