WO2023139937A1 - 基板搬送システム - Google Patents

基板搬送システム Download PDF

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Publication number
WO2023139937A1
WO2023139937A1 PCT/JP2022/044243 JP2022044243W WO2023139937A1 WO 2023139937 A1 WO2023139937 A1 WO 2023139937A1 JP 2022044243 W JP2022044243 W JP 2022044243W WO 2023139937 A1 WO2023139937 A1 WO 2023139937A1
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WIPO (PCT)
Prior art keywords
substrate
temperature
transfer
processing module
substrate transfer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/044243
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
樹 岡村
紀彦 網倉
正知 北
健弘 新藤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020247026742A priority Critical patent/KR20240137011A/ko
Priority to CN202280088398.1A priority patent/CN118541786A/zh
Priority to JP2023575104A priority patent/JPWO2023139937A1/ja
Publication of WO2023139937A1 publication Critical patent/WO2023139937A1/ja
Priority to US18/605,892 priority patent/US20240222185A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7602—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a robot blade or gripped by a gripper for conveyance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J11/00—Manipulators not otherwise provided for
    • B25J11/0095—Manipulators transporting wafers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J15/00—Gripping heads and other end effectors
    • B25J15/009—Gripping heads and other end effectors with pins for accurately positioning the object on the gripping head
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J19/00—Accessories fitted to manipulators, e.g. for monitoring, for viewing; Safety devices combined with or specially adapted for use in connection with manipulators
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B25—HAND TOOLS; PORTABLE POWER-DRIVEN TOOLS; MANIPULATORS
    • B25J—MANIPULATORS; CHAMBERS PROVIDED WITH MANIPULATION DEVICES
    • B25J19/00—Accessories fitted to manipulators, e.g. for monitoring, for viewing; Safety devices combined with or specially adapted for use in connection with manipulators
    • B25J19/0054—Cooling means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602—Temperature monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06—Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0604—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3302—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3311—Horizontal transfer of a batch of workpieces

Definitions

  • the present disclosure relates to a substrate transfer system.
  • Patent Literature 1 discloses an articulated transfer device that includes a first holding arm that holds a first substrate, a second holding arm that holds a second substrate, and a driving arm whose one end is connected to the first holding arm and the second holding arm via a driving portion.
  • the technology according to the present disclosure improves substrate transfer accuracy using a transfer robot.
  • One aspect of the present disclosure is a substrate transfer system comprising: a substrate processing module; a substrate transfer module connected to the substrate processing module; and at least one controller; the substrate processing module including a substrate processing chamber; a substrate support disposed within the substrate processing chamber; a first temperature sensor configured to measure a temperature of the substrate support;
  • the robot includes a first end effector having a first holding pad capable of holding a substrate processed at a high temperature in the substrate processing module; a second end effector having a second holding pad capable of holding a substrate processed at a low temperature in the substrate processing module; a supply unit, a second temperature sensor configured to measure a temperature within the substrate transfer robot, and a temperature adjustment section configured to adjust the temperature of the cooling gas based on the output of the second temperature sensor, wherein the at least one control section determines whether to transfer the substrate on the substrate support section by the first end effector or the second end effector based on the output of the first temperature sensor; and the output of the at least one deposit detection sensor. determining when to clean in the substrate
  • FIG. 1 is a plan view showing an outline of the configuration of a substrate processing system according to one embodiment;
  • FIG. It is a perspective view showing an outline of composition of a conveying machine concerning one embodiment.
  • It is a sectional view showing an outline of composition of a conveying machine concerning one embodiment.
  • 1 is a cross-sectional view showing the outline of the configuration of an air cooler according to one embodiment;
  • FIG. 4 is an explanatory diagram showing an example of measurement results by a deposit detection sensor;
  • substrate processes such as etching, film formation, and diffusion are performed on a semiconductor substrate (hereinafter simply referred to as "substrate") supported by a substrate support in a processing chamber.
  • a processing chamber for performing this substrate processing is provided adjacent to a transfer chamber for transferring the substrate inside.
  • a holding pad for holding a substrate is arranged on a transfer robot, and if deposits adhere to and accumulate on this holding pad, substrate slippage (slippage of the substrate on the transfer robot in the horizontal direction) may occur.
  • substrate slippage slippage of the substrate on the transfer robot in the horizontal direction
  • the system executes a process in which high-temperature processing and low-temperature processing are mixed, that is, when high-temperature substrates and low-temperature substrates are transported together, if the temperature of the substrate to be transported is out of the above-described appropriate temperature range of the holding pads, the substrate may not be transported appropriately.
  • a drive mechanism such as a motor is incorporated in each axis of the multi-joint transfer robot. If the drive mechanism generates heat due to its operation and the temperature of the transfer robot rises, the transfer accuracy may deteriorate due to this.
  • the plasma processing system includes a plasma processing apparatus 1 and a controller 2 as shown in FIG.
  • a plasma processing system is an example of a substrate processing system and an example of a substrate transport system.
  • the plasma processing apparatus 1 is an example of a substrate processing apparatus.
  • the wafer is an example of the substrate W.
  • FIG. In the plasma processing system the substrate W is subjected to desired processing such as film formation processing and etching processing under a reduced pressure atmosphere (under a vacuum atmosphere). Note that the configuration of the plasma processing system according to the present disclosure is not limited to this, and may be arbitrarily selected.
  • the plasma processing apparatus 1 has a configuration in which an atmosphere section 10 and a decompression section 11 are integrally connected via load lock modules 20a and 20b.
  • the atmospheric part 10 loading/unloading of a later-described FOUP 31 capable of accommodating a plurality of substrates W is carried out under atmospheric pressure, and the substrates W are transported to/from the load lock modules 20a and 20b.
  • the decompression unit 11 the substrate W is subjected to desired processing under a decompressed atmosphere (vacuum atmosphere), and further, the substrate W is transported between the load lock modules 20a and 20b.
  • a stage 21a on which the substrate W is placed is provided inside the load lock module 20a.
  • the load lock module 20a temporarily holds the substrate W on the stage 21a in order to deliver the substrate W transported from the loader module 30 of the atmosphere section 10, which will be described later, to the transfer module 50 of the decompression section 11, which will be described later.
  • the load lock module 20a is connected to a loader module 30, which will be described later, via a gate valve 22a. Also, the load lock module 20a is connected to a transfer module 50, which will be described later, via a gate valve 23a. These gate valves 22a and 23a ensure airtightness and mutual communication between the load lock module 20a and the loader module 30 and transfer module 50 at the same time.
  • An air supply unit (not shown) that supplies gas and an exhaust unit (not shown) that exhausts gas are connected to the load lock module 20a, and the internal atmosphere can be switched between an atmospheric pressure atmosphere and a reduced pressure atmosphere by the air supply unit and the exhaust unit. That is, the load-lock module 20a is configured so that the substrate W can be transferred appropriately between the atmosphere section 10 having an atmospheric pressure atmosphere and the decompression section 11 having a decompression atmosphere.
  • the load lock module 20b has the same configuration as the load lock module 20a. That is, the load lock module 20b has a stage 21b on which the substrate W is placed, a gate valve 22b on the loader module 30 side, and a gate valve 23b on the transfer module 50 side.
  • the load lock module 20b temporarily holds the substrate W on the stage 21b in order to deliver the substrate W transferred from the transfer module 50 of the decompression unit 11, which will be described later, to the loader module 30 of the atmosphere unit 10, which will be described later.
  • the atmospheric part 10 has a loader module 30 equipped with a transport device 40, which will be described later, and a load port 32 on which a FOUP 31 is placed.
  • the FOUP 31 is capable of storing a plurality of substrates W.
  • the loader module 30 may be connected to an orienter module (not shown) for adjusting the horizontal orientation of the substrate W, a buffer module (not shown) for temporarily storing a plurality of substrates W, or the like.
  • the loader module 30 has a rectangular housing, and the inside of the housing is maintained at atmospheric pressure.
  • a plurality of, for example, four load ports 32 are arranged side by side on one side surface that constitutes the long side of the housing of the loader module 30 .
  • Load-lock modules 20 a and 20 b are arranged side by side on the other side surface that constitutes the long side of the housing of the loader module 30 .
  • a transport device 40 capable of transporting the substrate W is provided inside the housing of the loader module 30 .
  • the transport device 40 has a transport arm 41 that supports the substrate W during transport, a turntable 42 that rotatably supports the transport arm 41, and a base 43 on which the turntable 42 is mounted.
  • the decompression unit 11 has a transfer module 50 for transporting the substrate W and a processing module 60 for performing desired processing on the substrate W.
  • the interiors of the transfer module 50 and the processing module 60 are each maintained in a reduced pressure atmosphere.
  • a plurality of, for example, six, processing modules 60 are provided for one transfer module 50 . Note that the number and arrangement of the processing modules 60 are not limited to those of this embodiment, and can be set arbitrarily.
  • a transfer module 50 as a substrate transfer module includes a reduced-pressure transfer chamber 51 as a substrate transfer chamber having a polygonal interior, which in the illustrated example has a square-shaped casing in a plan view. That is, the transfer module 50 is positioned adjacent to the load lock modules 20 a , 20 b and the six processing modules 60 .
  • the transfer module 50 transports the substrate W loaded into the load lock module 20a to one processing module 60, and transports the substrate W subjected to the desired processing in the processing module 60 to the atmospheric part 10 via the load lock module 20b.
  • the processing module 60 includes a processing chamber 61 , a substrate support section 62 , a first temperature sensor 63 and a plasma generation section 64 .
  • the processing chamber 61 has a plasma processing space.
  • the processing chamber 61 also has at least one gas inlet for supplying at least one processing gas to the plasma processing space and at least one gas outlet for exhausting gas from the plasma processing space.
  • the gas supply port is connected to a gas supply section (not shown), and the gas discharge port is connected to an exhaust system (not shown).
  • the substrate support 62 is positioned within the plasma processing space and has a substrate support surface for supporting a substrate.
  • the first temperature sensor 63 measures the temperature of the substrate support 62 , more preferably the temperature of the substrate W supported by the substrate support 62 .
  • the plasma generator 64 is configured to generate plasma from at least one processing gas supplied into the plasma processing space.
  • Plasma formed in the plasma processing space includes capacitively coupled plasma (CCP), inductively coupled plasma (ICP), ECR plasma (Electron-Cyclotron-resonance plasma), helicon wave excited plasma (HWP). lasma), surface wave plasma (SWP: Surface Wave Plasma), or the like.
  • various types of plasma generators may be used, including alternating current (AC) plasma generators and direct current (DC) plasma generators.
  • the AC signal (AC power) used in the AC plasma generator has a frequency within the range of 100 kHz to 10 GHz.
  • AC signals include RF (Radio Frequency) signals and microwave signals.
  • the RF signal has a frequency within the range of 100 kHz-150 MHz.
  • a transport device 70 is provided inside the transfer module 50 .
  • a transport device 70 as a substrate transport robot is configured to hold and transport a substrate W, and transports the substrate W between the load lock modules 20 a and 20 b and each processing module 60 .
  • the transport device 70 is mounted on a stage 71 via a base 101, which will be described later.
  • FIG. 2 is a perspective view schematically showing the outline of the configuration of the conveying device 70 according to this embodiment.
  • FIG. 3 is a vertical cross-sectional view schematically showing the outline of the configuration of the conveying device 70. As shown in FIG.
  • the transport device 70 has a transport arm 100 that holds and moves the substrate W, and a base 101 that supports the transport arm 100 .
  • the transfer arm 100 is a multi-joint type arm, and has a link arm structure in which a plurality of, for example, four arms (first to fourth arms 111 to 114) are connected.
  • the first arm 111 has a base end rotatably connected to the base 101 and a tip end connected to the second arm 112 .
  • the second arm 112 has a proximal end rotatably connected to the first arm 111 and a distal end connected to the third arm 113 and the fourth arm 114 .
  • the base ends of the third arm 113 and the fourth arm 114 are rotatably connected to the second arm 112 .
  • the third arm 113 is provided below the fourth arm 114 .
  • a first joint 121 is provided between the base end of the first arm 111 and the base 101 . Further, inside the first joint 121, a driving mechanism 121a including a rotating member such as a motor is provided. The first arm 111 is configured to be rotatable (rotatable) about the first joint 121 with respect to the base 101 by the drive mechanism 121a.
  • a second joint 122 is provided between the proximal end of the second arm 112 and the distal end of the first arm 111 . Further, inside the second joint 122, a driving mechanism 122a including a rotating member such as a motor is provided. The second arm 112 is configured to be rotatable (rotatable) about the second joint 122 with respect to the first arm 111 by the drive mechanism 122a.
  • each hollow portion Inside each of the first arm 111 and the second arm 112, there is formed a hollow portion of atmospheric atmosphere (white portion in the arm in FIG. 3).
  • Various parts are accommodated in each hollow portion.
  • the rotating members included in the drive mechanisms 121a and 122a described above and the drive mechanisms 123a and 124a described later are housed in this hollow portion as shown in FIG.
  • electric cables (not shown) connected to drive mechanisms 121a, 122a, 123a, and 124a, electric cables (not shown) connected to deposit detection sensors 131a and 141a, which will be described later, or an air tube 160, which will be described later, connected to an air cooler 150, etc. are accommodated.
  • a vibration meter (not shown) for measuring vibration of the transfer arm 100, a second temperature sensor 161 for measuring the internal temperature of the transfer arm 100, and the like are accommodated. These parts are not exposed outside the arm.
  • the third arm 113 has a fork 130 (first end effector) holding the substrate W on its upper surface and a hand 131 supporting the fork 130 .
  • the fork 130 is arranged on the distal end side of the third arm 113 and the hand 131 is arranged on the proximal end side of the third arm 113 .
  • the third arm 113 is arranged below the fourth arm 114 at the same position as the fourth arm 114 in plan view, that is, so as to vertically overlap the fourth arm 114 .
  • the third arm 113 and the fourth arm 114 can simultaneously hold two substrates W so as to overlap vertically, and the fork 130 of the third arm 113 functions as a lower pick of the transfer device 70 .
  • a fork 130 as a substrate holding portion has a bifurcated shape in which the proximal end side is connected to the hand 131 and the distal end side branches into two.
  • a plurality of high temperature pads 130a are provided on the upper surface of the fork 130, and the fork 130 holds the substrate W by suction with these plurality of high temperature pads 130a.
  • the high-temperature pad 130 a is made of a material capable of maintaining the holding force of the substrate W in a temperature range of 0° C. to 300° C., for example, and adsorbs and holds the high-temperature substrate W after being processed by the processing module 60 .
  • fluororesin (fluorororubber) such as D0270 or K8900 can be selected as an example, but the material for the high-temperature pad 130a is not particularly limited as long as the holding force of the substrate W can be maintained in the above temperature range.
  • shape of the fork 130 is not limited to that of the present embodiment, and may be, for example, a flat plate shape.
  • a hand 131 as a sensor arrangement portion is connected at its proximal end to the distal end of the second arm 112 via a third joint 123 to be described later, and is connected to the fork 130 described above at its distal end.
  • a deposit detection sensor 131a is provided on the upper surface of the tip side (fork 130 side) of the hand 131 as a deposit detection sensor for measuring the amount of deposits (reaction products) adhering to the upper surface of the substrate W held by the fork 130 or the upper surface of the high temperature pad 130a on the fork 130.
  • the deposit detection sensor 131a is arranged on the proximal side of the fork 130 (first end effector).
  • Depot detection sensor 131 a is desirably arranged such that the height position of its upper surface substantially coincides with the height position of the upper surface of high temperature pad 130 a provided on fork 130 .
  • a quartz crystal microbalance (QCM) sensor can be used, but the sensor is not limited to this as long as it can detect the deposit amount on the high temperature pad 130a.
  • An electric cable (not shown) connected to the deposit detection sensor 131a is arranged in the hollow portion of the first arm 111 and the hollow portion of the second arm 112 as described above, and further buried inside the third arm 113. Therefore, the electric cable is not exposed outside the arm.
  • a third joint 123 is provided between the proximal end of the third arm 113 and the distal end of the second arm 112 , more specifically, between the proximal end of the hand 131 and the distal end of the second arm 112 . Further, inside the third joint 123, a driving mechanism 123a including a rotating member such as a motor is provided. The third arm 113 is configured to be rotatable (rotatable) about the third joint 123 with respect to the second arm 112 by the drive mechanism 123a.
  • the third arm 113 may further be provided with a substrate sensor (not shown) for detecting the position of the substrate W, a support sensor for detecting the position of the substrate support 62 in the processing module 60, or an atmosphere detection sensor (not shown) for detecting the state of the atmosphere of the transfer module 50 or the processing module 60.
  • a substrate sensor (not shown) for detecting the position of the substrate W
  • a support sensor for detecting the position of the substrate support 62 in the processing module 60
  • an atmosphere detection sensor (not shown) for detecting the state of the atmosphere of the transfer module 50 or the processing module 60.
  • the fourth arm 114 has a fork 140 (second end effector) holding the substrate W on its upper surface and a hand 141 supporting the fork 140 .
  • the fork 140 is arranged on the distal end side of the fourth arm 114 and the hand 141 is arranged on the proximal end side of the fourth arm 114 .
  • the fourth arm 114 is arranged above the third arm 113 so as to vertically overlap the third arm 113 and functions as an upper pick of the transfer device 70 .
  • a fork 140 as a substrate holding portion has a bifurcated shape in which the proximal end side is connected to the hand 141 and the distal end side branches into two.
  • a plurality of low temperature pads 140a are provided on the upper surface of the fork 140, and the fork 140 holds the substrate W by suction with these plurality of low temperature pads 140a.
  • the low-temperature pad 140a is made of a material capable of maintaining the holding force of the substrate W in a temperature range of, for example, about ⁇ 60° C. to room temperature, preferably less than 0° C., and adsorbs and holds the low-temperature substrate W after being processed by the processing module 60.
  • Silicon resin (silicon rubber) can be selected as an example of the material of the low temperature pad 140a, but the material of the low temperature pad 140a is not particularly limited as long as the substrate W can be maintained in the above temperature range.
  • the shape of the fork 140 is not limited to that of the present embodiment, and may be, for example, a flat plate shape.
  • the hand 141 as a sensor arrangement portion has the same configuration as the hand 131 of the third arm 113 described above. That is, the hand 141 has a proximal end connected to the distal end of the second arm 112, a distal end connected to the fork 140, and a deposit detection sensor 141a provided on the upper surface.
  • the deposit detection sensor 141a is arranged on the base end side of the fork 140 (second end effector).
  • a crystal oscillator microbalance sensor can be selected as an example.
  • a fourth joint 124 is provided between the proximal end of the fourth arm 114 and the distal end of the second arm 112 , more specifically, between the proximal end of the hand 141 and the proximal end of the hand 131 of the third arm 113 .
  • the third joint 123 and the fourth joint 124 are provided at the same position in plan view.
  • a driving mechanism 124a including a rotating member such as a motor is provided inside the fourth joint 124.
  • the fourth arm 114 is configured to be rotatable (rotatable) about the fourth joint 124 with respect to the second arm 112 by the drive mechanism 124a.
  • the number of deposit detection sensors arranged in the transport device 70 is not particularly limited. Further, for example, in addition to the hands 131 and 141, the forks 130 and 140 may be further provided with other deposit detection sensors.
  • An air cooler 150 as a cooling gas supply unit is provided below the transfer device 70, more specifically below the transfer module 50, as shown in FIG.
  • the air cooler 150 internally cools the dry air introduced from the inlet side, and supplies it as cooling air to the inside of the conveying device 70, more specifically, to the hollow portions of the first arm 111 and the second arm 112 via the air tube 160 connected to the outlet side.
  • the cooling air supplied to the interior of the conveying device 70 cools the conveying device 70 whose internal temperature has increased due to the operation of the drive mechanisms 121a, 122a, 123a, and 124a, for example.
  • the cooling air used to cool the transfer device 70 is discharged to the outside through an exhaust port 162 formed below the transfer device 70, more specifically, below the transfer module 50, as shown in FIG.
  • FIG. 4 is a cross-sectional view showing the outline of the configuration of the air cooler 150.
  • the air cooler 150 has an air introduction hole 151 , a cooling mechanism 152 , a temperature control valve 153 and an air discharge hole 154 .
  • the air introduction hole 151 introduces dry air into the air cooler 150 as described above. Factory power can be used as an example of the introduced dry air.
  • the cooling mechanism 152 cools the dry air introduced into the air cooler 150 through the air introduction hole 151 .
  • the configuration of the cooling mechanism 152 is not particularly limited as long as it can cool the dry air to a desired temperature.
  • a temperature control valve 153 as a temperature control unit controls the cooling temperature of the dry air by the cooling mechanism 152, that is, the temperature of cooling air discharged through an air discharge hole 154, which will be described later.
  • the operation of the temperature control valve 153 may be manually controlled, or may be automatically controlled by, for example, the controller 2 described later.
  • the operation of the temperature control valve 153 can be controlled, for example, based on the measurement result of the second temperature sensor 161 provided in the hollow portion of the transfer arm described above, that is, the internal temperature of the transfer device 70 .
  • the air discharge hole 154 is connected to the air tube 160 as described above, and supplies cooling air to the hollow portions of the first arm 111 and the second arm 112 through the air tube 160 .
  • the air tube 160 and the second temperature sensor 161 can be arranged in the hollow portion formed inside the transport device 70, more specifically, inside the transport arm 100.
  • One end of the air tube 160 is connected to the air discharge hole 154 of the air cooler 150, and the other end of the air tube 160 is arranged in the hollow portion of the transfer arm 100 near the tip of the transfer arm 100, for example, near the fourth joint 124.
  • the air tube 160 introduces the cooling air from the air cooler 150 into the hollow portion from near the tip of the transfer arm 100 .
  • the supply position of the cooling air is not particularly limited.
  • the cooling air may be supplied toward the vicinity of the tip of the transfer arm 100 as described above, or may be supplied toward the joints (first to fourth joints 121 to 124) of the transfer arm 100 so that the cooling air is directly supplied to each of the drive mechanisms 121a to 124a that generate heat.
  • the second temperature sensor 161 is arranged on each axis of the transfer arm 100 (first to fourth joints 121 to 124 described above), as shown in FIG.
  • the plurality of second temperature sensors 161 temporally monitor the temperature rise of the transfer device 70 caused by the driving mechanisms 121a to 124a arranged in the hollow portion, more specifically, the temperature rise inside the transfer arm 100.
  • the internal temperature of the transfer arm 100 is used for temperature control of the cooling air output from the air cooler 150, for example.
  • the air cooler 150 and the second temperature sensor 161 described above constitute a "temperature control system" according to the technique of the present disclosure.
  • Controller 2 processes computer-executable instructions that cause plasma processing apparatus 1 to perform the various steps described in this disclosure. Controller 2 may be configured to control elements of plasma processing apparatus 1 to perform the various processes described herein. In one embodiment, part or all of the controller 2 may be included in the plasma processing apparatus 1 .
  • the control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented by, for example, a computer 2a. Processing unit 2a1 can be configured to perform various control operations by reading a program from storage unit 2a2 and executing the read program.
  • This program may be stored in the storage unit 2a2 in advance, or may be acquired via a medium when necessary.
  • the acquired program is stored in the storage unit 2a2, read from the storage unit 2a2 and executed by the processing unit 2a1.
  • the medium may be various storage media readable by the computer 2a, or may be a communication line connected to the communication interface 2a3.
  • the processing unit 2a1 may be a CPU (Central Processing Unit).
  • the storage unit 2a2 may include RAM (Random Access Memory), ROM (Read Only Memory), HDD (Hard Disk Drive), SSD (Solid State Drive), or a combination thereof.
  • the communication interface 2a3 may communicate with the plasma processing apparatus 1 via a communication line such as a LAN (Local Area Network).
  • the storage medium may be temporary or non-temporary.
  • the transport device 40 takes out the substrate W from the desired FOUP 31 and carries it into the load lock module 20a. After that, the inside of the load lock module 20a is sealed and the pressure is reduced. After that, the inside of the load lock module 20a and the inside of the transfer module 50 are communicated.
  • the substrate W is held by the transport device 70 and transported from the load lock module 20 a to the transfer module 50 .
  • the substrate W since the temperature of the unprocessed substrate W transported from the load lock module 20a is normal temperature, the substrate W may be held by any of the forks 130 and 140 of the transport device 70, that is, by either the high temperature pad 130a or the low temperature pad 140a.
  • the gate valve 60 a of one processing module 60 is opened, and the substrate W is loaded into the one processing module 60 by the transfer device 70 . After that, the gate valve 60 a is closed, and the substrate W is subjected to desired processing in the processing module 60 .
  • the gate valve 60 a is opened, and the substrate W is unloaded from the processing module 60 by the transfer device 70 . After that, the gate valve 60a is closed.
  • the temperature of the substrate W unloaded from the processing module 60 can be 200° C. or higher, for example. Further, for example, when a low-temperature process is performed on the substrate W, the temperature of the substrate W unloaded from the processing module 60 can be less than 0° C., for example. As described above, the temperature of the substrate W unloaded from the processing module 60 varies greatly depending on the type and conditions of processing performed in the processing module 60 . At this time, if the temperature of the processed substrate W to be transported is out of the proper temperature range of the holding pads provided on the forks of the transport device 70, as described above, the substrate cannot be properly transported due to this.
  • the necessary holding force for the substrate W cannot be ensured by the holding pads, and the substrate may slip.
  • the holding pads may be damaged, making it difficult to hold the substrate W in the first place.
  • the high temperature pad 130a and the low temperature pad 140a are arranged on the two forks 130 and 140 provided in the conveying device 70, respectively.
  • each of the forks 130 and 140 is selectively used as an arm for transporting high-temperature substrates (fork 130 in the embodiment) and an arm for transporting low-temperature substrates (fork 140 in the embodiment).
  • the substrate W can be appropriately unloaded from the processing module 60 regardless of the temperature of the substrate W after processing.
  • the selection of the transfer fork for holding the substrate W may be determined in advance according to, for example, the type of process performed in the processing module 60, that is, according to the process recipe.
  • the transfer fork for holding the substrate W may be selected based on the measurement result of the first temperature sensor 63 in the processing module 60 described above.
  • the transfer fork may be automatically selected based on the temperature of the substrate supporting portion 62 that supports the substrate W, preferably the temperature of the substrate W to be transferred.
  • the transfer fork can be automatically selected based on the actually measured temperature of the substrate W to be transferred, so there is no need to manually change the setting even when the process content is changed.
  • two high-temperature arms and one low-temperature arm are provided to the transport device 70 for transporting high-temperature substrates W, but the number of high-temperature arms and low-temperature arms is not limited.
  • the substrates W are conveyed one by one in the decompression part 11 of the plasma processing apparatus 1, but two or more arms for high temperature and two or more arms for low temperature may be provided so that two or more substrates W can be conveyed at the same time.
  • the transport device 70 next transports the substrate W into the load lock module 20b.
  • the inside of the load lock module 20b is sealed and released to the atmosphere.
  • the substrate W that has become hot or cold due to the processing in the processing module 60 is temporarily held in the load lock module 20b, and the temperature is adjusted to about room temperature. After the temperature of the substrate W is adjusted to about room temperature, the inside of the load lock module 20b and the inside of the loader module 30 are communicated with each other.
  • the substrate W is held by the transport device 40 and returned from the load lock module 20b via the loader module 30 to the desired FOUP 31 to be accommodated. This completes a series of wafer processing in the plasma processing apparatus 1 .
  • the substrate W can be appropriately transported regardless of the temperature of the substrate W after processing in the processing module 60, in other words, regardless of the type and conditions of substrate processing in the processing module 60. More specifically, by holding the high-temperature substrate W after processing with the fork 130 through the high-temperature pad 130a, damage to the holding pad during holding of the high-temperature substrate is suppressed, and as a result, the high-temperature substrate can be conveyed appropriately.
  • the temperature of the substrate W to be transported can be measured in advance by the first temperature sensor 63 before the substrate W is unloaded from the processing module 60 .
  • whether the high-temperature arm or the low-temperature arm should be used to unload the substrate W in the transport device 70 can be appropriately and automatically selected regardless of the type and conditions of substrate processing performed in the processing module 60, in other words, regardless of the temperature of the substrate W to be transported.
  • the selection of the high temperature arm and the low temperature arm can be automatically performed, so that manual recipe change by an operator or the like is not required.
  • the temperature of the transfer device 70 having a multi-joint structure rises due to the heat generated by the operation of the drive mechanisms 121a to 124a provided in the respective shafts (first to fourth joints 121 to 124) of the transfer device 70.
  • the temperature of the transport device 70 rises in this way, there is a risk that the transport accuracy of the substrate W will deteriorate due to this, as described above.
  • dry air for cooling the transport device is supplied to the interior of the transport device, more specifically, the interior of the transport arm, in order to suppress the deterioration of the transport accuracy caused by the temperature rise.
  • dry air is supplied to the interior of the conveying device in this way, it is necessary to reduce the consumption (flow rate) of the dry air from the viewpoint of consideration for the environment.
  • the air cooler 150 for cooling the dry air is arranged on the supply path of the dry air for cooling the conveying device.
  • cooling air cooled by the air cooler 150 is supplied to the inside of the transfer arm 100 of the transfer device 70 instead of supplying dry air at substantially room temperature as in the conventional art.
  • the air cooler 150 can control the temperature of the cooling air supplied into the transfer arm 100 based on the measurement result of the second temperature sensor 161 (see FIG. 3) provided on each axis of the transfer device 70, that is, the internal temperature of the transfer arm 100. Temperature control of the cooling air is realized by the temperature control valve 153 of the air cooler 150, for example. In this way, by monitoring the internal temperature of the transport device 70 with the second temperature sensor 161 and controlling the discharge temperature of the cooling air in accordance with the increase in the internal temperature of the transport device 70, it is possible to suppress excessive cooling of the transport device 70 or insufficient cooling capacity due to the cooling air, and to optimize the consumption of dry air while suppressing the deterioration of the transport accuracy of the substrate W.
  • this temperature control valve 153 may be manually performed based on the measurement result of the second temperature sensor 161, or may be automatically controlled. However, from the viewpoint of optimizing the cooling air temperature and dry air consumption, it is desirable that the operation of the temperature control valve 153 be automatically controlled. In this case, the operation of the temperature control valve 153 can be controlled by the controller 2, for example.
  • the transfer module 50 and the transfer device 70 are cleaned (removal of the attached deposits) in order to suppress the occurrence of substrate slip caused by the attachment of the deposits.
  • the amount of deposits adhering to the transport device 70 varies depending on, for example, the type of substrate processing performed in the processing module 60 and the rate of operation, there is a problem in that it is difficult to properly determine the cleaning timing.
  • deposit detection sensors 131a and 141a for detecting deposit amounts on the forks 130 and 140, more specifically on the high temperature pad 130a and the low temperature pad 140a, are arranged on the hands 131 and 141 of the third and fourth arms 113 and 114.
  • the QCM sensors as the deposit detection sensors 131a and 141a utilize the characteristic that the resonance frequency (vertical axis in FIG. 5) is lowered by deposits adhering to the surface of the quartz plate, thereby detecting the amount of deposits adhering to the deposit detection sensors 131a and 141a.
  • the cleaning timing of the transfer module 50 is controlled based on the resonance frequency (attachment amount of deposit) detected by the deposit detection sensors 131a and 141a.
  • a threshold value dashed line in FIG. 5
  • the start of cleaning of the transfer module 50 may be instructed at the timing (broken line circle portion in FIG. 5) when the detected resonance frequency (deposit amount) falls below the threshold value.
  • the timing of cleaning can be controlled based on the deposit amount visualized by the deposit detection sensors 131a and 141a. Therefore, cleaning can be appropriately performed at the timing when the desired deposit amount is measured, regardless of the type of substrate processing performed in the processing module 60, the operating rate, or the like.
  • the transfer module 50 the substrate W cannot be transferred during this period, and the operation of the plasma processing apparatus 1 must be stopped.
  • the number of cleanings of the transfer module 50 can be minimized, that is, the downtime of the plasma processing apparatus 1 can be minimized.
  • the deposit detection sensors 131a and 141a are arranged on the upper surfaces of the hands 131 and 141 near the forks 130 and 140 on which the high temperature pad 130a and the low temperature pad 140a are arranged. Further, the deposit detection sensors 131a and 141a are arranged so that the upper surfaces of the high temperature pad 130a and the low temperature pad 140a are substantially aligned with each other. According to this embodiment, the deposit detection sensors 131a and 141a are arranged under substantially the same conditions (installation position and height) as the high temperature pad 130a and the low temperature pad 140a.
  • the amount of deposits adhering to the deposit detection sensors 131a and 141a and the amount of deposits adhering to the high temperature pads 130a and the low temperature pads 140a become approximately the same, and the amounts of deposits on the high temperature pads 130a and the low temperature pads 140a that cause substrate slippage can be detected more appropriately.
  • the cleaning timing of the transfer module 50 is controlled based on the deposit amount on the deposit detection sensors 131a and 141a, in other words, the contamination state on the deposit detection sensors 131a and 141a.
  • the deposit amount adhering to the high temperature pad 130a and the low temperature pad 140a can be proportional to the contamination state inside the processing module 60 when the substrate W is transferred.
  • another deposit detection sensor may detect the contamination state (deposit amount) in the processing module 60, and based on the measurement result of the other deposit detection sensor, it may be further determined whether to clean the transfer module 50 (conveying device 70).
  • the transfer device 70 according to the embodiment is arranged in a plasma processing system as a substrate processing system has been described as an example.
  • the type of substrate processing system is not limited to a plasma processing system, and the transfer apparatus 70 according to the embodiment can be arranged in any substrate processing system as long as high temperature processes and low temperature processes are mixed.
  • the module in which the transfer device 70 is arranged does not need to be a vacuum transfer module like the transfer module 50 described above, and may be a module that transfers the substrate W in the atmosphere.

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  • Engineering & Computer Science (AREA)
  • Robotics (AREA)
  • Mechanical Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
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US20240222185A1 (en) 2024-07-04

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