WO2023095616A1 - 半導体集積回路装置 - Google Patents

半導体集積回路装置 Download PDF

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Publication number
WO2023095616A1
WO2023095616A1 PCT/JP2022/041730 JP2022041730W WO2023095616A1 WO 2023095616 A1 WO2023095616 A1 WO 2023095616A1 JP 2022041730 W JP2022041730 W JP 2022041730W WO 2023095616 A1 WO2023095616 A1 WO 2023095616A1
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WO
WIPO (PCT)
Prior art keywords
transistors
transistor
wiring
power supply
integrated circuit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/041730
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
寿雄 日野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Socionext Inc
Original Assignee
Socionext Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Socionext Inc filed Critical Socionext Inc
Priority to JP2023563604A priority Critical patent/JPWO2023095616A1/ja
Priority to CN202280078935.4A priority patent/CN118318295A/zh
Publication of WO2023095616A1 publication Critical patent/WO2023095616A1/ja
Priority to US18/668,988 priority patent/US20240304629A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H10D84/859—Complementary IGFETs, e.g. CMOS comprising both N-type and P-type wells, e.g. twin-tub
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/20—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits characterised by logic function, e.g. AND, OR, NOR, NOT circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs
    • H10D84/0165—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs the components including complementary IGFETs, e.g. CMOS devices
    • H10D84/0186—Manufacturing their interconnections or electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/90—Masterslice integrated circuits
    • H10D84/903—Masterslice integrated circuits comprising field effect technology
    • H10D84/907—CMOS gate arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
    • H10W20/41—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their conductive parts
    • H10W20/427—Power or ground buses

Definitions

  • the contact 261 connecting the metal wiring 251 corresponding to the input node A and the gate wiring 231 is located at the grid line g1.
  • a contact 262 connecting metal wiring 252 corresponding to input node B and gate wiring 232 is located at grid line g2.
  • a contact 263 connecting the metal wiring 253 corresponding to the input node C and the gate wiring 233 is located at the grid line g1.

Landscapes

  • Engineering & Computer Science (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Design And Manufacture Of Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
PCT/JP2022/041730 2021-11-29 2022-11-09 半導体集積回路装置 Ceased WO2023095616A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2023563604A JPWO2023095616A1 (https=) 2021-11-29 2022-11-09
CN202280078935.4A CN118318295A (zh) 2021-11-29 2022-11-09 半导体集成电路装置
US18/668,988 US20240304629A1 (en) 2021-11-29 2024-05-20 Semiconductor integrated circuit device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021193046 2021-11-29
JP2021-193046 2021-11-29

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US18/668,988 Continuation US20240304629A1 (en) 2021-11-29 2024-05-20 Semiconductor integrated circuit device

Publications (1)

Publication Number Publication Date
WO2023095616A1 true WO2023095616A1 (ja) 2023-06-01

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PCT/JP2022/041730 Ceased WO2023095616A1 (ja) 2021-11-29 2022-11-09 半導体集積回路装置

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US (1) US20240304629A1 (https=)
JP (1) JPWO2023095616A1 (https=)
CN (1) CN118318295A (https=)
WO (1) WO2023095616A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021075540A1 (ja) * 2019-10-18 2021-04-22 株式会社ソシオネクスト 半導体集積回路装置

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154756A (ja) * 1996-11-26 1998-06-09 Hitachi Ltd セルライブラリおよび半導体装置
JP2005259905A (ja) * 2004-03-10 2005-09-22 Oki Electric Ind Co Ltd 半導体集積回路及びその修正方法
JP2009088370A (ja) * 2007-10-02 2009-04-23 Renesas Technology Corp 半導体装置の設計方法および半導体装置
JP2010039817A (ja) * 2008-08-06 2010-02-18 Nec Electronics Corp 信頼性検証用ライブラリ生成方法及びそのプログラム
JP2011049477A (ja) * 2009-08-28 2011-03-10 Sony Corp 半導体集積回路
WO2017145906A1 (ja) * 2016-02-25 2017-08-31 株式会社ソシオネクスト 半導体集積回路装置
WO2017191799A1 (ja) * 2016-05-06 2017-11-09 株式会社ソシオネクスト 半導体集積回路装置
JP2018067693A (ja) * 2016-10-21 2018-04-26 株式会社ソシオネクスト 半導体装置
JP2019114641A (ja) * 2017-12-22 2019-07-11 ルネサスエレクトロニクス株式会社 半導体装置
WO2021111604A1 (ja) * 2019-12-05 2021-06-10 株式会社ソシオネクスト 半導体装置

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10154756A (ja) * 1996-11-26 1998-06-09 Hitachi Ltd セルライブラリおよび半導体装置
JP2005259905A (ja) * 2004-03-10 2005-09-22 Oki Electric Ind Co Ltd 半導体集積回路及びその修正方法
JP2009088370A (ja) * 2007-10-02 2009-04-23 Renesas Technology Corp 半導体装置の設計方法および半導体装置
JP2010039817A (ja) * 2008-08-06 2010-02-18 Nec Electronics Corp 信頼性検証用ライブラリ生成方法及びそのプログラム
JP2011049477A (ja) * 2009-08-28 2011-03-10 Sony Corp 半導体集積回路
WO2017145906A1 (ja) * 2016-02-25 2017-08-31 株式会社ソシオネクスト 半導体集積回路装置
WO2017191799A1 (ja) * 2016-05-06 2017-11-09 株式会社ソシオネクスト 半導体集積回路装置
JP2018067693A (ja) * 2016-10-21 2018-04-26 株式会社ソシオネクスト 半導体装置
JP2019114641A (ja) * 2017-12-22 2019-07-11 ルネサスエレクトロニクス株式会社 半導体装置
WO2021111604A1 (ja) * 2019-12-05 2021-06-10 株式会社ソシオネクスト 半導体装置

Also Published As

Publication number Publication date
JPWO2023095616A1 (https=) 2023-06-01
CN118318295A (zh) 2024-07-09
US20240304629A1 (en) 2024-09-12

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