WO2023058273A1 - 成膜装置およびこれを用いた結晶性半導体膜の成膜方法 - Google Patents

成膜装置およびこれを用いた結晶性半導体膜の成膜方法 Download PDF

Info

Publication number
WO2023058273A1
WO2023058273A1 PCT/JP2022/025860 JP2022025860W WO2023058273A1 WO 2023058273 A1 WO2023058273 A1 WO 2023058273A1 JP 2022025860 W JP2022025860 W JP 2022025860W WO 2023058273 A1 WO2023058273 A1 WO 2023058273A1
Authority
WO
WIPO (PCT)
Prior art keywords
rubber
substrate
raw material
forming apparatus
stage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2022/025860
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
洋 橋上
宗之 小嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Chemical Co Ltd
Shin Etsu Engineering Co Ltd
Original Assignee
Shin Etsu Chemical Co Ltd
Shin Etsu Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Chemical Co Ltd, Shin Etsu Engineering Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to EP22878146.4A priority Critical patent/EP4415028A4/en
Priority to US18/693,599 priority patent/US20240234140A1/en
Priority to KR1020247011095A priority patent/KR20240067080A/ko
Priority to CN202280067456.2A priority patent/CN118120047A/zh
Publication of WO2023058273A1 publication Critical patent/WO2023058273A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a film forming apparatus and a method for forming a crystalline semiconductor film using the same.
  • Mist Chemical Vapor Deposition is known as a method capable of forming various thin films on a substrate at a low temperature and in an atmospheric pressure atmosphere. In particular, it has attracted attention because it can form a crystalline semiconductor thin film useful for electronic device applications.
  • Patent Document 1 a raw material solution in which a gallium acetylacetonate complex is dissolved in a mixed solution of hydrochloric acid and water is misted and supplied to a sapphire substrate installed in a narrow space (fine channel) provided in a reactor, A method of forming an ⁇ -Ga 2 O 3 film on the substrate held at 350° C. to 500° C. is described.
  • Patent Document 2 a raw material solution obtained by adding hydrobromic acid to an aqueous solution of gallium bromide is turned into a mist, and supplied to a sapphire substrate kept at 550° C. on a hot plate to form an ⁇ -Ga 2 O 3 film. Examples are given.
  • Patent document 3 describes a method of epitaxial growth on a ⁇ -Ga 2 O 3 film substrate heated to 750° C. using an aqueous solution in which gallium chloride and ammonium fluoride are dissolved as raw materials.
  • JP 2013-028480 A JP 2020-107636 A Japanese Patent Application Laid-Open No. 2020-188170
  • crystal thin film growth by mist CVD is characterized by supplying raw materials as droplets to a substrate kept at a high temperature.
  • a large temperature gradient is generated in the thickness direction of the substrate.
  • a method of alleviating the temperature gradient is generally adopted by reducing the amount of mist supplied or the flow rate of the carrier gas, etc.
  • this reduces the growth rate of the film, making it difficult to improve productivity.
  • the present invention has been made to solve the above-described problems, and provides a film forming apparatus capable of forming a crystalline semiconductor film having good crystal orientation with stability and high productivity, and a film forming apparatus for forming a crystalline semiconductor film.
  • the purpose is to provide a method.
  • the present invention provides a film forming apparatus, atomization means for atomizing the raw material solution to generate a raw material mist; carrier gas supply means for conveying the raw material mist; mist supply means for supplying a mixture of the raw material mist and the carrier gas to the substrate surface; a stage on which the substrate is placed; heating means for heating the substrate; Exhaust means piped directly or indirectly to the stage;
  • the substrate can be stably held, so that the film forming apparatus can form a crystalline semiconductor film having good crystal orientation with high productivity and stability. can.
  • the piping that directly or indirectly connects the stage and the exhaust means may be polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile-butadiene-styrene resin, acrylic resin, or polyamide.
  • polyimide polyamideimide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber , styrene rubber, still rubber, ethylene/propylene rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluorine rubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, nickel alloy, stainless steel Any one or a combination thereof is preferable.
  • the harmful substances contained in the exhaust gas can be removed, so the degree of vacuum inside the pipe can be maintained stably.
  • the piping connecting the exhaust means and the abatement means is polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile butadiene styrene resin, acrylic resin, polyamide, polyimide, Polyamideimide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber, styrene rubber , still rubber, ethylene/propylene rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluororubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, nickel alloy, stainless steel,
  • the gas contact portion of the exhaust means is polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile butadiene styrene resin, acrylic resin, polyamide, polyimide, polyamideimide, nylon, acetal.
  • Resin polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber, styrene rubber, still rubber, ethylene propylene Rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluororubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, nickel alloy, or any combination thereof It is preferable that there is
  • the substrate can be stably fixed, so that the apparatus can be made to be capable of stably forming a film and having high productivity.
  • a pipe that directly or indirectly connects the stage and the exhaust means is further provided with cooling means for cooling the pipe.
  • the degree of freedom in the apparatus configuration and process conditions can be increased, so that the apparatus can be made capable of stably forming a higher quality crystalline semiconductor film.
  • the present invention also provides a method for forming a crystalline semiconductor film using the film forming apparatus, comprising: placing the substrate on the stage; a step of fixing the substrate to the stage by vacuum-sucking the substrate with the evacuation means; heating the substrate; atomizing the raw material solution; mixing the atomized raw material solution and the carrier gas to form the mixture;
  • a method for forming a crystalline semiconductor film comprising the step of supplying the mixed gas to the substrate to form a film on the substrate.
  • the raw material solution has a pH of 0.4 or more and 4.0 or less.
  • a substrate having a main surface area of 15 cm 2 or more it is preferable to use a substrate having a main surface area of 15 cm 2 or more.
  • the degree of vacuum in the pipe it is preferable to set the degree of vacuum in the pipe to 80 kPa or less.
  • a highly productive film deposition apparatus capable of stably forming a crystalline semiconductor film having a large area and excellent crystal orientation can be obtained. Further, according to the present invention, a crystalline semiconductor film having a large area and excellent crystal orientation can be stably formed with high productivity.
  • FIG. 1 is a schematic diagram showing one form of a substrate holding means according to the present invention
  • FIG. 4 is a schematic diagram showing another form of substrate holding means according to the present invention
  • the inventors of the present invention have found that if the stage on which the substrate is placed is provided with an exhaust means that is directly or indirectly pipe-connected, stable and high productivity and good crystal orientation can be achieved.
  • the inventors have found that the film forming apparatus can form a highly crystalline semiconductor film, and completed the present invention.
  • the present invention is a film forming apparatus, atomization means for atomizing the raw material solution to generate a raw material mist; carrier gas supply means for conveying the raw material mist; mist supply means for supplying a mixture of the raw material mist and the carrier gas to the substrate surface; a stage on which the substrate is placed; heating means for heating the substrate; Exhaust means piped directly or indirectly to the stage; It is a film forming apparatus comprising:
  • the film forming apparatus of the present invention comprises atomization means, carrier gas supply means, mist supply means, a stage on which a substrate is placed, heating means, and exhaust means connected directly or indirectly to the stage by piping. and a film forming apparatus. Details will be described below.
  • FIG. 1 is a diagram for explaining one form of the configuration of a film forming apparatus suitably used in the present invention.
  • a film forming apparatus 100 preferably used in the present invention includes atomizing means 123 in contact with a raw material container 120 for atomizing a raw material solution 121 to generate a raw material mist 122, a film forming chamber 131 for forming a film on the substrate 131, an abatement means 137 for treating the exhaust gas discharged from the film forming chamber 131 connected by a pipe 136, a stage 135 for mounting the substrate 130, the substrate 130 and the stage A heating means 132 for heating the substrate 135, an evacuation means 142 such as a pump directly connected to the stage 135 for fixing the substrate 130 by reduced pressure suction (vacuum adsorption), and an evacuation means 142 for processing the evacuation of the evacuation means 142.
  • the film forming apparatus 100 further includes carrier gas supply means 111 , and the carrier gas supply means 111 , source container 120 and film forming chamber 131 are connected by pipes 113 and 124 .
  • Carrier gas 151 and raw material mist 122 are mixed in raw material container 120 to form mixture 152 , which is supplied to deposition chamber 131 by mist supply means 160 .
  • the raw material solution 121 is not particularly limited as long as it can be misted, and a metal in the form of a complex or a salt dissolved or dispersed in water or an organic solvent can be used.
  • an acid such as hydrochloric acid, hydrobromic acid, or hydroiodic acid or an alkali such as ammonia to the solvent to adjust the pH of the solvent.
  • the atomization means 123 for the raw material solution 121 is not particularly limited as long as it can atomize or dropletize the raw material solution 121, and may be any known means. is preferred.
  • the mist or droplets obtained using ultrasonic waves have an initial velocity of zero and are preferable because they float in the air. Since it is a possible mist, there is no damage due to collision energy, so it is very suitable.
  • the droplet size is not particularly limited, and may be droplets of several millimeters, preferably 50 ⁇ m or less, more preferably 0.1 to 10 ⁇ m.
  • a plurality of raw material containers 120 may be provided depending on the material to be deposited. Further, in this case, the gas mixture 152 supplied from the plurality of raw material containers 120 to the film forming chamber 131 may be independently supplied to the film forming chamber 131, or may be supplied to the pipe 124 or a container for mixing (unnecessary). (illustration) may be separately provided and mixed.
  • the raw material container 120 may further include temperature control means (not shown) for directly or indirectly controlling the temperature of the raw material solution 121 .
  • the temperature of the raw material solution 121 is not particularly limited as long as it can be atomized. By doing so, the temperature drop on the film formation surface of the substrate 130 is alleviated, and better film formation becomes possible. If the temperature is 90° C. or less, the vaporization of the raw material mist 122 is effectively suppressed, the yield in film formation can be stably maintained, and the introduction of defects on the film surface can be more stably suppressed.
  • the raw material container 120 may further comprise means for replenishing the raw material solution 121 (not shown).
  • the means for replenishing the raw material solution 121 may further include means for directly or indirectly detecting the weight or liquid level of the raw material solution 121 .
  • Carrier gas supply means 111 supplies carrier gas 151 .
  • the type of the carrier gas 151 is not particularly limited, and in addition to inert gases such as nitrogen and argon, reducing gases such as air, oxygen, ozone, hydrogen and forming gas can be used. can also be used.
  • the flow rate of the carrier gas may be appropriately set depending on the size of the substrate and the size of the film forming chamber, and can be set to, for example, about 0.01 to 100 L/min.
  • the carrier gas supply means 111 may be an air compressor, various gas cylinders, a nitrogen gas separator, or the like, and may also be provided with a mechanism for controlling the gas supply flow rate.
  • the film forming chamber 131 is provided with a supply pipe 134 that is connected to the pipe 124 and that supplies the air-fuel mixture 152 into the film forming chamber 131 .
  • a supply pipe 134 for example, quartz, glass, or a resin tube or the like can be used.
  • the exhaust gas outlet 133 may be provided at a position that does not affect mist supply from the supply pipe 134 .
  • the exhaust port 133 may be connected to a harm removing means 137 via a pipe 136 .
  • the piping 136 or the abatement means 137 may further include means for adjusting the flow rate of exhaust gas or the amount of outside air introduced.
  • the abatement means 137 is not particularly limited as long as it can remove harmful substances contained in the exhaust gas, and known techniques such as mist traps, wet scrubbers, combustion abatement devices, and bag filters can be widely applied. .
  • the structure and material of the film forming chamber 131 are not particularly limited.
  • metal such as aluminum and stainless steel, soda glass, and borosilicate glass may be used.
  • a stage 135 is installed at the bottom of the film formation chamber 131 , and the substrate 130 is placed on the stage 135 .
  • the stage 135 has a heating means 132, and the substrate 130 is heated by heating the stage 135.
  • the heating of the substrate 130 is appropriately adjusted depending on the raw material mist 122 to be used and film forming conditions, but generally can be in the range of 120.degree. C. to 800.degree.
  • the mist supply means 160 is not particularly limited as long as it supplies the air-fuel mixture 152 to the surface of the substrate 130 .
  • the pipe 124 and the supply pipe 134 can be combined to form the mist supply means 160 .
  • heating means A known heating means can be applied to the heating means 132, and resistance heating, electromagnetic induction heating, or lamp heating is preferably used.
  • the material of the stage 135 may be appropriately selected according to the process conditions such as the acidity of the raw material used for film formation and the heating temperature.
  • Aluminum oxide, aluminum nitride, and quartz are preferable, and silicon carbide, aluminum oxide, aluminum nitride, and quartz are more preferable when higher corrosion resistance to the raw material solution is desired.
  • Nickel alloy refers to an alloy containing 50% or more of nickel.
  • the stage 135 may have a replaceable structure according to the type of raw material solution and process conditions.
  • the stage may have a laminated structure of a pedestal and an upper plate placed on the pedestal, and the substrate may be placed on the upper plate.
  • the base body and the upper plate may be attached to the pedestal by suction at the same time through the through holes provided in the upper plate.
  • the stage 135 may further include a mechanism for transporting or rotating the substrate.
  • the substrate mounting portion of the stage 135 is formed with a single or a plurality of suction holes 135a connecting the substrate mounting surface of the stage 135 and its back surface. , are connected by pipes 141 and 144 .
  • the substrate 130 is fixed on the stage 135 by reducing the pressure inside the suction holes 135a and the pipes 141 by the exhaust means 142 .
  • the substrate mounting surface of the stage 135 may have a shape suitable for the shape of the substrate 130, and may be flat, have a curved portion, or have an uneven shape.
  • the pipes 113 and 124 are not particularly limited as long as they have sufficient stability against the raw material solution 121 and the temperature inside and outside the film forming chamber 131, and are made of quartz, polyethylene, polypropylene, vinyl chloride, silicon resin, urethane. Common resin pipes such as resin and fluororesin can be widely used.
  • a pipe from the carrier gas supply means 111 that does not pass through the raw material container 120 is separately connected to the pipe 124, and a diluent gas is further added to the mixture 152 so that the raw material mist 122 and the carrier gas 151 are mixed. It is also possible to adjust the proportions.
  • the flow rate of the diluent gas may be appropriately set, and may be, for example, 0.1 to 20 times/minute of the carrier gas.
  • the diluent gas may be supplied to the downstream side of the raw material container 120, for example.
  • the same diluent gas as the carrier gas 151 may be used, or a different one may be used.
  • the pipes 141 and 144 are appropriately selected depending on the type of raw material solution 121 and the operating temperature of the stage 135, but at least some of them are made of polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile butadiene styrene resin.
  • acrylic resin acrylic resin, polyamide, polyimide, polyamideimide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, Natural rubber, butadiene rubber, styrene rubber, still rubber, ethylene/propylene rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluorine rubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, It is preferably made of nickel alloy, stainless steel, or a combination thereof. By doing so, the piping is not damaged even when a highly reactive raw material solution is used for film formation, so that the substrate can be continuously and stably fixed.
  • the stage 135 When the stage 135 is at a high temperature of 300° C. or higher, it is preferable to use a heat-resistant material such as quartz glass, aluminum oxide, silicon carbide, aluminum nitride, nickel alloy, or stainless steel for at least the connecting portion of the pipe 141 to the stage 135 . preferable. By doing so, it becomes possible to insulate the stage 135 and the piping 141 or to dissipate the heat from the stage 135, so that the degree of freedom of usable piping materials can be increased and the variety of the piping materials can be increased. device design becomes possible.
  • a heat-resistant material such as quartz glass, aluminum oxide, silicon carbide, aluminum nitride, nickel alloy, or stainless steel
  • cooling means In order to more positively promote the heat dissipation of the pipe 141, as shown in FIG. A widely known cooling method can be applied to the cooling means 238, and it may be air-cooled or water-cooled. Also, a metal block or heat radiating fins may be used together, or the length and shape of the pipe 241 made of the heat-resistant material may be adjusted to promote heat radiation.
  • exhaust means An ejector or a vacuum pump is preferably used as the exhaust means 142 .
  • the gas-contacting portion of the exhaust means 142 is made of polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile-butadiene-styrene resin, acrylic resin, polyamide, polyimide, polyamide-imide, nylon, acetal resin, Polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber, styrene rubber, still rubber, ethylene propylene rubber, Nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluororubber, soda glass, borosilicate glass
  • the ultimate vacuum degree by the exhaust means 142 is not particularly limited as long as it is within a range where the substrate 130 can be stably fixed. be.
  • the pipes 141 and 242 may be equipped with pressure gauges (not shown). Further, in this case, the pressure gauge may be capable of outputting a signal corresponding to the measured value to an external instrument.
  • the abatement means 143 is not particularly limited as long as it can remove harmful substances contained in the exhaust gas sucked from the stage 135.
  • a known mist trap, wet scrubber, combustion abatement device, bag filter, or the like can be used. The technology can be widely applied. As a result, harmful substances contained in the exhaust gas can be removed, so that the degree of vacuum in the pipe can be stably maintained.
  • the film forming apparatus 100 of FIG. 1 shows a mode in which the abatement means 137 and 143 are provided separately, the present invention is not limited to this, and the abatement means 137 and 143 are the same means and collectively used. It can also be in a processed form.
  • FIG. 1 and 2 show an example in which the abatement means 143 treats the exhaust from the exhaust means 142, but the present invention is not limited to this, and as shown in FIG. 341a and pipe 341b (pipe 341) may be provided between the stage 135 and the exhaust means 142, and the gas treated by the detoxification means 143 may be sucked by the exhaust means.
  • pipe 341b pipe 341
  • a method for forming a crystalline semiconductor film using a film forming apparatus comprising: placing the substrate on the stage; heating the substrate; atomizing the raw material solution; mixing the atomized raw material solution and the carrier gas to form the mixture;
  • a method for forming a crystalline semiconductor film comprising the step of supplying air to the substrate to form a film on the substrate.
  • a raw material solution is made into a mist, and the raw material solution that has been made into a mist (raw material mist) is adsorbed and fixed on a stage of the film forming apparatus.
  • a method for forming a crystalline semiconductor film characterized in that the crystalline semiconductor film is formed on the substrate by supplying the crystalline semiconductor film to the substrate.
  • the substrate 130 is not particularly limited as long as it can support the crystalline semiconductor film to be formed.
  • the shape of the substrate 130 is preferably plate-like, such as a flat plate or disc, but is not limited to this, and may be rod-like, columnar, prismatic, tubular, ring-like, or the like.
  • the material of the substrate 130 is also not particularly limited, and may be a known material, an organic compound, or an inorganic compound.
  • single crystals are particularly preferable, and single crystals of GaN, SiC, lithium tantalate, lithium niobate, silicon, sapphire, and ⁇ -type gallium oxide are used to form crystalline semiconductor films with better crystal orientation. Since it becomes easy to obtain, it is preferable.
  • the method of mounting the substrate on the stage is not particularly limited, and a known method can be used.
  • the substrate 130 is placed on the substrate mounting surface of the stage 135, and a vacuum is formed in the adsorption holes 135a blocked by the substrate 130 by the exhaust means 142, thereby fixing the substrate 130 to the stage 135. do.
  • the degree of vacuum at this time is appropriately adjusted according to the film formation conditions and the properties of the substrate, but it is generally 80 kPa or less, more preferably 40 kPa or less. If the pressure is 80 kPa or less, warping due to thermal stress occurring in the substrate 130 can be sufficiently suppressed, and the substrate will not crack.
  • the lower limit of the degree of vacuum is not particularly limited, it can be, for example, 5 kPa or more.
  • the heating method is not particularly limited, and a known method can be used, but it is particularly preferable to heat the stage. Also, the heating temperature is not particularly limited.
  • the method of atomizing the raw material solution is not particularly limited, and a known method can be used, preferably using ultrasonic waves.
  • a metal dissolved or dispersed in an organic solvent or water in the form of a complex or salt can be used.
  • an acid such as hydrochloric acid, hydrobromic acid or hydroiodic acid, or an alkali such as ammonia is added to a solvent such as the organic solvent or water to adjust the pH of the solvent.
  • the pH of the raw material solution is preferably 0.4 to 4.0, more preferably 0.8 to 2.0. If the pH is 0.4 or higher, detachment of the metal element is not dominant and the film growth is not inhibited. Therefore, defects caused by the precipitates are not introduced into the grown film and the quality of the film is not deteriorated.
  • salt forms include halide salts such as metal chloride salts, metal bromide salts, and metal iodide salts.
  • a salt solution in which the metal is dissolved in hydrogen halide such as hydrochloric acid, hydrobromic acid, or hydroiodic acid can also be used.
  • the form of the complex includes, for example, an acetylacetone complex, a carbonyl complex, an ammine complex, a hydride complex and the like.
  • An acetylacetonate complex can also be formed by mixing acetylacetone with the salt solution.
  • the content of metal in the raw material solution is not particularly limited, and can be set appropriately according to the purpose. It is preferably 0.001 mol/L or more and 2 mol/L or less, and more preferably 0.01 mol/L or more and 0.7 mol/L or less.
  • the raw material solution may contain a dopant.
  • the dopants may be n-type dopants such as tin, silicon, germanium, titanium, zirconium, vanadium or niobium, or p-type dopants such as copper, silver, cobalt, iridium, rhodium, magnesium, nickel, etc. A type dopant or the like is used.
  • the method of mixing the atomized raw material solution and the carrier gas to form the mixture is not particularly limited, and is a known method. can be used.
  • the type of carrier gas is not particularly limited, and in addition to inert gases such as nitrogen and argon, reducing gases such as air, oxygen, ozone, hydrogen and forming gas can also be used, and a plurality of these gases can be mixed and used. can also
  • the flow rate of the carrier gas may be appropriately set depending on the size of the substrate and the size of the film forming chamber, and can be set to, for example, about 0.01 to 100 L/min.
  • the method of supplying the mixture to the substrate to form a film are not particularly limited, and known methods can be used.
  • Example 1 [Device]
  • a nitrogen cylinder was used as a carrier gas supply means 111, and a raw material container 120 made of borosilicate glass was connected with a pipe 113 made of PFA.
  • a quartz deposition chamber 131 was prepared, and a supply pipe 134 made of quartz and a raw material container 120 were connected to the raw material container by a pipe 124 made of PFA.
  • the exhaust port 133 of the film formation chamber 131 was connected to a scrubber (abatement means 137) through a pipe 136 made of vinyl chloride.
  • the stage 135 is made of silicon carbide, and a resistance heater is installed below the stage 135 as a heating means 132 for the stage 135 .
  • stage 135 and a pump (Chemker 410 manufactured by Rocker Co.) having a PFA exhaust means 142 in contact with the gas are connected by a Hastelloy pipe 141, and a mist trap with a PFA membrane filter is used as an exhaust abatement means 143 for the pump exhaust.
  • a pipe 144 made of PFA was connected to the pump.
  • a c-plane sapphire substrate having a diameter of about 10 cm and a thickness of 0.7 mm was placed on a stage and fixed by adsorption with a pump. When the pressure inside the pipe 141 at this time was measured, it was 28 kPa.
  • a solution having a gallium concentration of 0.05 mol/L was prepared by dissolving gallium acetylacetonate in an acid solution obtained by mixing hydrochloric acid and pure water, and used as a raw material solution 121 .
  • the pH of this solution was measured and found to be 0.9.
  • the raw material container 120 was filled with the raw material solution 121, and the raw material solution 121 was atomized by applying ultrasonic vibration of 2.4 MHz.
  • Nitrogen gas was introduced from a nitrogen cylinder into the raw material container 120 at 5 L/min, and the generated mixture was supplied to the film forming chamber 131 to form a film. After that, the same procedure was repeated to prepare a total of 10 samples. Measurement by XRD (Rigaku SmartLab) confirmed that the film formed on the substrate was ⁇ -phase Ga 2 O 3 . After that, rocking curves were further measured for all the samples, and half widths were evaluated.
  • Example 1 A film was formed in the same manner as in Example 1, except that the substrate was not fixed by suction. After that, the same procedure was repeated to form films a total of 10 times, and the substrate was cracked 4 times. XRD measurement confirmed that the films formed on the substrates of the remaining six substrates were ⁇ -phase Ga 2 O 3 . After that, the rocking curves of the 6 samples thus produced were further measured to evaluate the half-value width.
  • Example 2 [Pipe cooling]
  • the piping from the stage to the pump has the configuration shown in FIG. Film formation and evaluation were performed in the same manner as in Example 1 except for the above.
  • Table 1 shows the average values of the rocking curve half-value widths of the films obtained in Examples 1 and 2 and Comparative Example 1.
  • a crystalline semiconductor film having a high crystal orientation was stably obtained, whereas in the crystalline semiconductor film of the comparative example, the crystal orientation was remarkably lowered.
  • the substrate since the substrate was not fixed, the heating of the substrate was insufficient, and the temperature of the film forming surface was lowered.
  • a hydrochloric acid aqueous solution having a pH of 0.9 was prepared by mixing only hydrochloric acid with pure water.
  • the raw material container 120 of the film forming apparatus used in Example 1 was filled with the hydrochloric acid aqueous solution, and then atomized.
  • a sapphire substrate having a diameter of about 10 cm and a thickness of 0.7 mm was placed on the stage 135 and fixed by suction with a pump.
  • nitrogen gas was introduced into the raw material container 120 at 5 L/min, and the generated gas mixture was supplied to the film forming chamber 131 . This state was maintained for an accumulated 1000 hours, and the pressure in the pipe 141 during this period was measured and found to be constant at 28 ⁇ 2 kPa.
  • Reference example 2 The experiment and the pressure measurement in the pipe 141 were performed in the same manner as in Reference Example 1, except that the stage 135 and the pump were connected by an iron pipe 141 .
  • the pressure inside the pipe 141 increased to 84 kPa after 800 hours. Corrosion was found in the pipe 141 .
  • the present invention is not limited to the above embodiments.
  • the above-described embodiment is an example, and any device having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same effect is the present invention. included in the technical scope of

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
PCT/JP2022/025860 2021-10-07 2022-06-29 成膜装置およびこれを用いた結晶性半導体膜の成膜方法 Ceased WO2023058273A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP22878146.4A EP4415028A4 (en) 2021-10-07 2022-06-29 FILM FORMING APPARATUS AND METHOD FOR FORMING CRYSTALLINE SEMICONDUCTIVE FILM INVOLVING THIS APPARATUS
US18/693,599 US20240234140A1 (en) 2021-10-07 2022-06-29 Film forming apparatus and method of forming crystalline semiconductor film using the same
KR1020247011095A KR20240067080A (ko) 2021-10-07 2022-06-29 성막장치 및 이를 이용한 결정성 반도체막의 성막방법
CN202280067456.2A CN118120047A (zh) 2021-10-07 2022-06-29 成膜装置及使用有该成膜装置的结晶性半导体膜的成膜方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021165618A JP2023056328A (ja) 2021-10-07 2021-10-07 成膜装置およびこれを用いた結晶性半導体膜の成膜方法
JP2021-165618 2021-10-07

Publications (1)

Publication Number Publication Date
WO2023058273A1 true WO2023058273A1 (ja) 2023-04-13

Family

ID=85804091

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2022/025860 Ceased WO2023058273A1 (ja) 2021-10-07 2022-06-29 成膜装置およびこれを用いた結晶性半導体膜の成膜方法

Country Status (7)

Country Link
US (1) US20240234140A1 (https=)
EP (1) EP4415028A4 (https=)
JP (1) JP2023056328A (https=)
KR (1) KR20240067080A (https=)
CN (1) CN118120047A (https=)
TW (1) TW202315968A (https=)
WO (1) WO2023058273A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025158494A1 (ja) * 2024-01-22 2025-07-31 株式会社ニコン ミスト成膜装置、及びミスト成膜方法
JP7731648B1 (ja) * 2024-03-06 2025-09-01 株式会社Tmeic 基材表面処理装置

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245265A (ja) * 1994-03-03 1995-09-19 Fujitsu Ltd 気相成長装置
JP2004158554A (ja) * 2002-11-05 2004-06-03 Rorze Corp 薄板状物スピン装置およびこれを用いた薄板状物処理システム
JP2012119591A (ja) * 2010-12-02 2012-06-21 Fuji Electric Co Ltd 吸着装置および吸着方法
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP2020107636A (ja) 2018-12-26 2020-07-09 株式会社Flosfia 結晶性酸化物膜
JP2020174153A (ja) * 2019-04-12 2020-10-22 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法
JP2020188170A (ja) 2019-05-15 2020-11-19 トヨタ自動車株式会社 ミスト生成装置及び成膜装置
JP6925548B1 (ja) * 2020-07-08 2021-08-25 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法及び成膜装置

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3714248B2 (ja) * 1993-12-22 2005-11-09 東京エレクトロン株式会社 処理装置及び処理方法
JP3264096B2 (ja) * 1994-05-20 2002-03-11 ソニー株式会社 横型気相成長装置および横型熱処理装置
JP2001085335A (ja) * 1999-09-10 2001-03-30 Fuji Xerox Co Ltd 半導体気相成長装置
JP2002025909A (ja) * 2000-06-30 2002-01-25 Sony Corp 成膜装置用除害装置及びこれを用いた成膜装置における除害方法
JP4686157B2 (ja) * 2004-09-29 2011-05-18 株式会社東芝 成膜装置のクリーニング方法
JP2013004777A (ja) * 2011-06-17 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法および成膜装置
JP6857641B2 (ja) * 2018-12-19 2021-04-14 信越化学工業株式会社 成膜方法及び成膜装置
JP6994694B2 (ja) * 2020-02-27 2022-01-14 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245265A (ja) * 1994-03-03 1995-09-19 Fujitsu Ltd 気相成長装置
JP2004158554A (ja) * 2002-11-05 2004-06-03 Rorze Corp 薄板状物スピン装置およびこれを用いた薄板状物処理システム
JP2012119591A (ja) * 2010-12-02 2012-06-21 Fuji Electric Co Ltd 吸着装置および吸着方法
JP2013028480A (ja) 2011-07-27 2013-02-07 Kochi Univ Of Technology ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP2020107636A (ja) 2018-12-26 2020-07-09 株式会社Flosfia 結晶性酸化物膜
JP2020174153A (ja) * 2019-04-12 2020-10-22 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法
JP2020188170A (ja) 2019-05-15 2020-11-19 トヨタ自動車株式会社 ミスト生成装置及び成膜装置
JP6925548B1 (ja) * 2020-07-08 2021-08-25 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法及び成膜装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4415028A4

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025158494A1 (ja) * 2024-01-22 2025-07-31 株式会社ニコン ミスト成膜装置、及びミスト成膜方法
JP7731648B1 (ja) * 2024-03-06 2025-09-01 株式会社Tmeic 基材表面処理装置
WO2025186929A1 (ja) * 2024-03-06 2025-09-12 株式会社Tmeic 基材表面処理装置

Also Published As

Publication number Publication date
US20240234140A1 (en) 2024-07-11
EP4415028A4 (en) 2026-02-18
JP2023056328A (ja) 2023-04-19
KR20240067080A (ko) 2024-05-16
EP4415028A1 (en) 2024-08-14
CN118120047A (zh) 2024-05-31
TW202315968A (zh) 2023-04-16

Similar Documents

Publication Publication Date Title
TWI490368B (zh) Preparation method of oxide crystal film
JP7492621B2 (ja) 成膜装置
CN1992168A (zh) 第iii族氮化物晶体物质的制造方法和制造装置
JP7289357B2 (ja) 半導体膜
WO2021079571A1 (ja) ガリウム前駆体の製造方法およびこれを用いた積層体の製造方法
WO2023058273A1 (ja) 成膜装置およびこれを用いた結晶性半導体膜の成膜方法
JP2024040219A (ja) 酸化ガリウム半導体膜の製造方法及び酸化ガリウム半導体膜
JP6233959B2 (ja) 酸化物結晶薄膜の製造方法
JP2014047097A (ja) 窒化物半導体結晶の製造方法
CN116018260A (zh) 层叠结构体
JP7614336B2 (ja) 積層体の製造方法、積層体の製造装置、積層体及び半導体装置
TWI891832B (zh) 成膜用摻雜原料溶液之製造方法、層積體之製造方法、成膜用摻雜原料溶液及半導體膜
JP7011207B2 (ja) 成膜用ドーピング原料溶液の製造方法、積層体の製造方法、成膜用ドーピング原料溶液及び半導体膜
US20250354260A1 (en) Film forming method and film forming apparatus
TWI911390B (zh) 製膜方法及製膜裝置
JP4859868B2 (ja) 水晶薄膜
JP6774593B2 (ja) 結晶性酸化物膜
JPS63188933A (ja) 窒化ガリウム系化合物半導体の気相成長方法
TW202346666A (zh) 成膜方法、成膜裝置、及積層體
WO2024043134A1 (ja) 成膜方法、成膜装置、サセプター、及びα－酸化ガリウム膜
JP2021163947A (ja) 結晶膜の製造方法
JP2004315364A (ja) 水晶薄膜

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 22878146

Country of ref document: EP

Kind code of ref document: A1

WWE Wipo information: entry into national phase

Ref document number: 18693599

Country of ref document: US

WWE Wipo information: entry into national phase

Ref document number: 202447024409

Country of ref document: IN

ENP Entry into the national phase

Ref document number: 20247011095

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 202280067456.2

Country of ref document: CN

WWE Wipo information: entry into national phase

Ref document number: 2022878146

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: DE

ENP Entry into the national phase

Ref document number: 2022878146

Country of ref document: EP

Effective date: 20240507