WO2023058273A1 - 成膜装置およびこれを用いた結晶性半導体膜の成膜方法 - Google Patents
成膜装置およびこれを用いた結晶性半導体膜の成膜方法 Download PDFInfo
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- WO2023058273A1 WO2023058273A1 PCT/JP2022/025860 JP2022025860W WO2023058273A1 WO 2023058273 A1 WO2023058273 A1 WO 2023058273A1 JP 2022025860 W JP2022025860 W JP 2022025860W WO 2023058273 A1 WO2023058273 A1 WO 2023058273A1
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- rubber
- substrate
- raw material
- forming apparatus
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- 238000000034 method Methods 0.000 title claims abstract description 40
- 239000004065 semiconductor Substances 0.000 title claims abstract description 39
- 239000003595 mist Substances 0.000 claims abstract description 39
- 239000012159 carrier gas Substances 0.000 claims abstract description 31
- 239000007789 gas Substances 0.000 claims abstract description 30
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000002156 mixing Methods 0.000 claims abstract description 10
- 239000000758 substrate Substances 0.000 claims description 97
- 239000002994 raw material Substances 0.000 claims description 80
- -1 polyethylene Polymers 0.000 claims description 43
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- 239000005060 rubber Substances 0.000 claims description 24
- 239000000203 mixture Substances 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 17
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 claims description 16
- 239000011347 resin Substances 0.000 claims description 14
- 229920005989 resin Polymers 0.000 claims description 14
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 13
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 13
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- 239000011521 glass Substances 0.000 claims description 11
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 10
- BZHJMEDXRYGGRV-UHFFFAOYSA-N Vinyl chloride Chemical compound ClC=C BZHJMEDXRYGGRV-UHFFFAOYSA-N 0.000 claims description 10
- 239000005388 borosilicate glass Substances 0.000 claims description 10
- 239000004696 Poly ether ether ketone Substances 0.000 claims description 9
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- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims description 9
- 229920002492 poly(sulfone) Polymers 0.000 claims description 9
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- DHKHKXVYLBGOIT-UHFFFAOYSA-N 1,1-Diethoxyethane Chemical compound CCOC(C)OCC DHKHKXVYLBGOIT-UHFFFAOYSA-N 0.000 claims description 8
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- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 claims description 8
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 claims description 8
- 229920000122 acrylonitrile butadiene styrene Polymers 0.000 claims description 8
- 238000001816 cooling Methods 0.000 claims description 8
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- 238000000889 atomisation Methods 0.000 claims description 6
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 claims description 6
- 229920001973 fluoroelastomer Polymers 0.000 claims description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 3
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- 239000013078 crystal Substances 0.000 abstract description 16
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- BMYNFMYTOJXKLE-UHFFFAOYSA-N 3-azaniumyl-2-hydroxypropanoate Chemical compound NCC(O)C(O)=O BMYNFMYTOJXKLE-UHFFFAOYSA-N 0.000 description 4
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- 238000010586 diagram Methods 0.000 description 3
- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 3
- 229910001873 dinitrogen Inorganic materials 0.000 description 3
- 229910001195 gallium oxide Inorganic materials 0.000 description 3
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- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical class C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 3
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- ZVYYAYJIGYODSD-LNTINUHCSA-K (z)-4-bis[[(z)-4-oxopent-2-en-2-yl]oxy]gallanyloxypent-3-en-2-one Chemical compound [Ga+3].C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O.C\C([O-])=C\C(C)=O ZVYYAYJIGYODSD-LNTINUHCSA-K 0.000 description 2
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- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
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- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
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- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 1
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Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
Definitions
- the present invention relates to a film forming apparatus and a method for forming a crystalline semiconductor film using the same.
- Mist Chemical Vapor Deposition is known as a method capable of forming various thin films on a substrate at a low temperature and in an atmospheric pressure atmosphere. In particular, it has attracted attention because it can form a crystalline semiconductor thin film useful for electronic device applications.
- Patent Document 1 a raw material solution in which a gallium acetylacetonate complex is dissolved in a mixed solution of hydrochloric acid and water is misted and supplied to a sapphire substrate installed in a narrow space (fine channel) provided in a reactor, A method of forming an ⁇ -Ga 2 O 3 film on the substrate held at 350° C. to 500° C. is described.
- Patent Document 2 a raw material solution obtained by adding hydrobromic acid to an aqueous solution of gallium bromide is turned into a mist, and supplied to a sapphire substrate kept at 550° C. on a hot plate to form an ⁇ -Ga 2 O 3 film. Examples are given.
- Patent document 3 describes a method of epitaxial growth on a ⁇ -Ga 2 O 3 film substrate heated to 750° C. using an aqueous solution in which gallium chloride and ammonium fluoride are dissolved as raw materials.
- JP 2013-028480 A JP 2020-107636 A Japanese Patent Application Laid-Open No. 2020-188170
- crystal thin film growth by mist CVD is characterized by supplying raw materials as droplets to a substrate kept at a high temperature.
- a large temperature gradient is generated in the thickness direction of the substrate.
- a method of alleviating the temperature gradient is generally adopted by reducing the amount of mist supplied or the flow rate of the carrier gas, etc.
- this reduces the growth rate of the film, making it difficult to improve productivity.
- the present invention has been made to solve the above-described problems, and provides a film forming apparatus capable of forming a crystalline semiconductor film having good crystal orientation with stability and high productivity, and a film forming apparatus for forming a crystalline semiconductor film.
- the purpose is to provide a method.
- the present invention provides a film forming apparatus, atomization means for atomizing the raw material solution to generate a raw material mist; carrier gas supply means for conveying the raw material mist; mist supply means for supplying a mixture of the raw material mist and the carrier gas to the substrate surface; a stage on which the substrate is placed; heating means for heating the substrate; Exhaust means piped directly or indirectly to the stage;
- the substrate can be stably held, so that the film forming apparatus can form a crystalline semiconductor film having good crystal orientation with high productivity and stability. can.
- the piping that directly or indirectly connects the stage and the exhaust means may be polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile-butadiene-styrene resin, acrylic resin, or polyamide.
- polyimide polyamideimide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber , styrene rubber, still rubber, ethylene/propylene rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluorine rubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, nickel alloy, stainless steel Any one or a combination thereof is preferable.
- the harmful substances contained in the exhaust gas can be removed, so the degree of vacuum inside the pipe can be maintained stably.
- the piping connecting the exhaust means and the abatement means is polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile butadiene styrene resin, acrylic resin, polyamide, polyimide, Polyamideimide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber, styrene rubber , still rubber, ethylene/propylene rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluororubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, nickel alloy, stainless steel,
- the gas contact portion of the exhaust means is polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile butadiene styrene resin, acrylic resin, polyamide, polyimide, polyamideimide, nylon, acetal.
- Resin polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber, styrene rubber, still rubber, ethylene propylene Rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluororubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, nickel alloy, or any combination thereof It is preferable that there is
- the substrate can be stably fixed, so that the apparatus can be made to be capable of stably forming a film and having high productivity.
- a pipe that directly or indirectly connects the stage and the exhaust means is further provided with cooling means for cooling the pipe.
- the degree of freedom in the apparatus configuration and process conditions can be increased, so that the apparatus can be made capable of stably forming a higher quality crystalline semiconductor film.
- the present invention also provides a method for forming a crystalline semiconductor film using the film forming apparatus, comprising: placing the substrate on the stage; a step of fixing the substrate to the stage by vacuum-sucking the substrate with the evacuation means; heating the substrate; atomizing the raw material solution; mixing the atomized raw material solution and the carrier gas to form the mixture;
- a method for forming a crystalline semiconductor film comprising the step of supplying the mixed gas to the substrate to form a film on the substrate.
- the raw material solution has a pH of 0.4 or more and 4.0 or less.
- a substrate having a main surface area of 15 cm 2 or more it is preferable to use a substrate having a main surface area of 15 cm 2 or more.
- the degree of vacuum in the pipe it is preferable to set the degree of vacuum in the pipe to 80 kPa or less.
- a highly productive film deposition apparatus capable of stably forming a crystalline semiconductor film having a large area and excellent crystal orientation can be obtained. Further, according to the present invention, a crystalline semiconductor film having a large area and excellent crystal orientation can be stably formed with high productivity.
- FIG. 1 is a schematic diagram showing one form of a substrate holding means according to the present invention
- FIG. 4 is a schematic diagram showing another form of substrate holding means according to the present invention
- the inventors of the present invention have found that if the stage on which the substrate is placed is provided with an exhaust means that is directly or indirectly pipe-connected, stable and high productivity and good crystal orientation can be achieved.
- the inventors have found that the film forming apparatus can form a highly crystalline semiconductor film, and completed the present invention.
- the present invention is a film forming apparatus, atomization means for atomizing the raw material solution to generate a raw material mist; carrier gas supply means for conveying the raw material mist; mist supply means for supplying a mixture of the raw material mist and the carrier gas to the substrate surface; a stage on which the substrate is placed; heating means for heating the substrate; Exhaust means piped directly or indirectly to the stage; It is a film forming apparatus comprising:
- the film forming apparatus of the present invention comprises atomization means, carrier gas supply means, mist supply means, a stage on which a substrate is placed, heating means, and exhaust means connected directly or indirectly to the stage by piping. and a film forming apparatus. Details will be described below.
- FIG. 1 is a diagram for explaining one form of the configuration of a film forming apparatus suitably used in the present invention.
- a film forming apparatus 100 preferably used in the present invention includes atomizing means 123 in contact with a raw material container 120 for atomizing a raw material solution 121 to generate a raw material mist 122, a film forming chamber 131 for forming a film on the substrate 131, an abatement means 137 for treating the exhaust gas discharged from the film forming chamber 131 connected by a pipe 136, a stage 135 for mounting the substrate 130, the substrate 130 and the stage A heating means 132 for heating the substrate 135, an evacuation means 142 such as a pump directly connected to the stage 135 for fixing the substrate 130 by reduced pressure suction (vacuum adsorption), and an evacuation means 142 for processing the evacuation of the evacuation means 142.
- the film forming apparatus 100 further includes carrier gas supply means 111 , and the carrier gas supply means 111 , source container 120 and film forming chamber 131 are connected by pipes 113 and 124 .
- Carrier gas 151 and raw material mist 122 are mixed in raw material container 120 to form mixture 152 , which is supplied to deposition chamber 131 by mist supply means 160 .
- the raw material solution 121 is not particularly limited as long as it can be misted, and a metal in the form of a complex or a salt dissolved or dispersed in water or an organic solvent can be used.
- an acid such as hydrochloric acid, hydrobromic acid, or hydroiodic acid or an alkali such as ammonia to the solvent to adjust the pH of the solvent.
- the atomization means 123 for the raw material solution 121 is not particularly limited as long as it can atomize or dropletize the raw material solution 121, and may be any known means. is preferred.
- the mist or droplets obtained using ultrasonic waves have an initial velocity of zero and are preferable because they float in the air. Since it is a possible mist, there is no damage due to collision energy, so it is very suitable.
- the droplet size is not particularly limited, and may be droplets of several millimeters, preferably 50 ⁇ m or less, more preferably 0.1 to 10 ⁇ m.
- a plurality of raw material containers 120 may be provided depending on the material to be deposited. Further, in this case, the gas mixture 152 supplied from the plurality of raw material containers 120 to the film forming chamber 131 may be independently supplied to the film forming chamber 131, or may be supplied to the pipe 124 or a container for mixing (unnecessary). (illustration) may be separately provided and mixed.
- the raw material container 120 may further include temperature control means (not shown) for directly or indirectly controlling the temperature of the raw material solution 121 .
- the temperature of the raw material solution 121 is not particularly limited as long as it can be atomized. By doing so, the temperature drop on the film formation surface of the substrate 130 is alleviated, and better film formation becomes possible. If the temperature is 90° C. or less, the vaporization of the raw material mist 122 is effectively suppressed, the yield in film formation can be stably maintained, and the introduction of defects on the film surface can be more stably suppressed.
- the raw material container 120 may further comprise means for replenishing the raw material solution 121 (not shown).
- the means for replenishing the raw material solution 121 may further include means for directly or indirectly detecting the weight or liquid level of the raw material solution 121 .
- Carrier gas supply means 111 supplies carrier gas 151 .
- the type of the carrier gas 151 is not particularly limited, and in addition to inert gases such as nitrogen and argon, reducing gases such as air, oxygen, ozone, hydrogen and forming gas can be used. can also be used.
- the flow rate of the carrier gas may be appropriately set depending on the size of the substrate and the size of the film forming chamber, and can be set to, for example, about 0.01 to 100 L/min.
- the carrier gas supply means 111 may be an air compressor, various gas cylinders, a nitrogen gas separator, or the like, and may also be provided with a mechanism for controlling the gas supply flow rate.
- the film forming chamber 131 is provided with a supply pipe 134 that is connected to the pipe 124 and that supplies the air-fuel mixture 152 into the film forming chamber 131 .
- a supply pipe 134 for example, quartz, glass, or a resin tube or the like can be used.
- the exhaust gas outlet 133 may be provided at a position that does not affect mist supply from the supply pipe 134 .
- the exhaust port 133 may be connected to a harm removing means 137 via a pipe 136 .
- the piping 136 or the abatement means 137 may further include means for adjusting the flow rate of exhaust gas or the amount of outside air introduced.
- the abatement means 137 is not particularly limited as long as it can remove harmful substances contained in the exhaust gas, and known techniques such as mist traps, wet scrubbers, combustion abatement devices, and bag filters can be widely applied. .
- the structure and material of the film forming chamber 131 are not particularly limited.
- metal such as aluminum and stainless steel, soda glass, and borosilicate glass may be used.
- a stage 135 is installed at the bottom of the film formation chamber 131 , and the substrate 130 is placed on the stage 135 .
- the stage 135 has a heating means 132, and the substrate 130 is heated by heating the stage 135.
- the heating of the substrate 130 is appropriately adjusted depending on the raw material mist 122 to be used and film forming conditions, but generally can be in the range of 120.degree. C. to 800.degree.
- the mist supply means 160 is not particularly limited as long as it supplies the air-fuel mixture 152 to the surface of the substrate 130 .
- the pipe 124 and the supply pipe 134 can be combined to form the mist supply means 160 .
- heating means A known heating means can be applied to the heating means 132, and resistance heating, electromagnetic induction heating, or lamp heating is preferably used.
- the material of the stage 135 may be appropriately selected according to the process conditions such as the acidity of the raw material used for film formation and the heating temperature.
- Aluminum oxide, aluminum nitride, and quartz are preferable, and silicon carbide, aluminum oxide, aluminum nitride, and quartz are more preferable when higher corrosion resistance to the raw material solution is desired.
- Nickel alloy refers to an alloy containing 50% or more of nickel.
- the stage 135 may have a replaceable structure according to the type of raw material solution and process conditions.
- the stage may have a laminated structure of a pedestal and an upper plate placed on the pedestal, and the substrate may be placed on the upper plate.
- the base body and the upper plate may be attached to the pedestal by suction at the same time through the through holes provided in the upper plate.
- the stage 135 may further include a mechanism for transporting or rotating the substrate.
- the substrate mounting portion of the stage 135 is formed with a single or a plurality of suction holes 135a connecting the substrate mounting surface of the stage 135 and its back surface. , are connected by pipes 141 and 144 .
- the substrate 130 is fixed on the stage 135 by reducing the pressure inside the suction holes 135a and the pipes 141 by the exhaust means 142 .
- the substrate mounting surface of the stage 135 may have a shape suitable for the shape of the substrate 130, and may be flat, have a curved portion, or have an uneven shape.
- the pipes 113 and 124 are not particularly limited as long as they have sufficient stability against the raw material solution 121 and the temperature inside and outside the film forming chamber 131, and are made of quartz, polyethylene, polypropylene, vinyl chloride, silicon resin, urethane. Common resin pipes such as resin and fluororesin can be widely used.
- a pipe from the carrier gas supply means 111 that does not pass through the raw material container 120 is separately connected to the pipe 124, and a diluent gas is further added to the mixture 152 so that the raw material mist 122 and the carrier gas 151 are mixed. It is also possible to adjust the proportions.
- the flow rate of the diluent gas may be appropriately set, and may be, for example, 0.1 to 20 times/minute of the carrier gas.
- the diluent gas may be supplied to the downstream side of the raw material container 120, for example.
- the same diluent gas as the carrier gas 151 may be used, or a different one may be used.
- the pipes 141 and 144 are appropriately selected depending on the type of raw material solution 121 and the operating temperature of the stage 135, but at least some of them are made of polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile butadiene styrene resin.
- acrylic resin acrylic resin, polyamide, polyimide, polyamideimide, nylon, acetal resin, polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, Natural rubber, butadiene rubber, styrene rubber, still rubber, ethylene/propylene rubber, nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluorine rubber, soda glass, borosilicate glass, quartz glass, silicon carbide, aluminum nitride, aluminum oxide, It is preferably made of nickel alloy, stainless steel, or a combination thereof. By doing so, the piping is not damaged even when a highly reactive raw material solution is used for film formation, so that the substrate can be continuously and stably fixed.
- the stage 135 When the stage 135 is at a high temperature of 300° C. or higher, it is preferable to use a heat-resistant material such as quartz glass, aluminum oxide, silicon carbide, aluminum nitride, nickel alloy, or stainless steel for at least the connecting portion of the pipe 141 to the stage 135 . preferable. By doing so, it becomes possible to insulate the stage 135 and the piping 141 or to dissipate the heat from the stage 135, so that the degree of freedom of usable piping materials can be increased and the variety of the piping materials can be increased. device design becomes possible.
- a heat-resistant material such as quartz glass, aluminum oxide, silicon carbide, aluminum nitride, nickel alloy, or stainless steel
- cooling means In order to more positively promote the heat dissipation of the pipe 141, as shown in FIG. A widely known cooling method can be applied to the cooling means 238, and it may be air-cooled or water-cooled. Also, a metal block or heat radiating fins may be used together, or the length and shape of the pipe 241 made of the heat-resistant material may be adjusted to promote heat radiation.
- exhaust means An ejector or a vacuum pump is preferably used as the exhaust means 142 .
- the gas-contacting portion of the exhaust means 142 is made of polyethylene, polypropylene, vinyl chloride, polystyrene, polyvinyl acetate, urethane resin, fluororesin, acrylonitrile-butadiene-styrene resin, acrylic resin, polyamide, polyimide, polyamide-imide, nylon, acetal resin, Polycarbonate, polyphenylene ether, polyester, polyethylene terephthalate, polybutylene terephthalate, polyolefin, polyphenylene sulfide, polysulfone, polyether sulfone, polyarylate, polyether ether ketone, natural rubber, butadiene rubber, styrene rubber, still rubber, ethylene propylene rubber, Nitrile rubber, acrylic rubber, urethane rubber, silicone rubber, fluororubber, soda glass, borosilicate glass
- the ultimate vacuum degree by the exhaust means 142 is not particularly limited as long as it is within a range where the substrate 130 can be stably fixed. be.
- the pipes 141 and 242 may be equipped with pressure gauges (not shown). Further, in this case, the pressure gauge may be capable of outputting a signal corresponding to the measured value to an external instrument.
- the abatement means 143 is not particularly limited as long as it can remove harmful substances contained in the exhaust gas sucked from the stage 135.
- a known mist trap, wet scrubber, combustion abatement device, bag filter, or the like can be used. The technology can be widely applied. As a result, harmful substances contained in the exhaust gas can be removed, so that the degree of vacuum in the pipe can be stably maintained.
- the film forming apparatus 100 of FIG. 1 shows a mode in which the abatement means 137 and 143 are provided separately, the present invention is not limited to this, and the abatement means 137 and 143 are the same means and collectively used. It can also be in a processed form.
- FIG. 1 and 2 show an example in which the abatement means 143 treats the exhaust from the exhaust means 142, but the present invention is not limited to this, and as shown in FIG. 341a and pipe 341b (pipe 341) may be provided between the stage 135 and the exhaust means 142, and the gas treated by the detoxification means 143 may be sucked by the exhaust means.
- pipe 341b pipe 341
- a method for forming a crystalline semiconductor film using a film forming apparatus comprising: placing the substrate on the stage; heating the substrate; atomizing the raw material solution; mixing the atomized raw material solution and the carrier gas to form the mixture;
- a method for forming a crystalline semiconductor film comprising the step of supplying air to the substrate to form a film on the substrate.
- a raw material solution is made into a mist, and the raw material solution that has been made into a mist (raw material mist) is adsorbed and fixed on a stage of the film forming apparatus.
- a method for forming a crystalline semiconductor film characterized in that the crystalline semiconductor film is formed on the substrate by supplying the crystalline semiconductor film to the substrate.
- the substrate 130 is not particularly limited as long as it can support the crystalline semiconductor film to be formed.
- the shape of the substrate 130 is preferably plate-like, such as a flat plate or disc, but is not limited to this, and may be rod-like, columnar, prismatic, tubular, ring-like, or the like.
- the material of the substrate 130 is also not particularly limited, and may be a known material, an organic compound, or an inorganic compound.
- single crystals are particularly preferable, and single crystals of GaN, SiC, lithium tantalate, lithium niobate, silicon, sapphire, and ⁇ -type gallium oxide are used to form crystalline semiconductor films with better crystal orientation. Since it becomes easy to obtain, it is preferable.
- the method of mounting the substrate on the stage is not particularly limited, and a known method can be used.
- the substrate 130 is placed on the substrate mounting surface of the stage 135, and a vacuum is formed in the adsorption holes 135a blocked by the substrate 130 by the exhaust means 142, thereby fixing the substrate 130 to the stage 135. do.
- the degree of vacuum at this time is appropriately adjusted according to the film formation conditions and the properties of the substrate, but it is generally 80 kPa or less, more preferably 40 kPa or less. If the pressure is 80 kPa or less, warping due to thermal stress occurring in the substrate 130 can be sufficiently suppressed, and the substrate will not crack.
- the lower limit of the degree of vacuum is not particularly limited, it can be, for example, 5 kPa or more.
- the heating method is not particularly limited, and a known method can be used, but it is particularly preferable to heat the stage. Also, the heating temperature is not particularly limited.
- the method of atomizing the raw material solution is not particularly limited, and a known method can be used, preferably using ultrasonic waves.
- a metal dissolved or dispersed in an organic solvent or water in the form of a complex or salt can be used.
- an acid such as hydrochloric acid, hydrobromic acid or hydroiodic acid, or an alkali such as ammonia is added to a solvent such as the organic solvent or water to adjust the pH of the solvent.
- the pH of the raw material solution is preferably 0.4 to 4.0, more preferably 0.8 to 2.0. If the pH is 0.4 or higher, detachment of the metal element is not dominant and the film growth is not inhibited. Therefore, defects caused by the precipitates are not introduced into the grown film and the quality of the film is not deteriorated.
- salt forms include halide salts such as metal chloride salts, metal bromide salts, and metal iodide salts.
- a salt solution in which the metal is dissolved in hydrogen halide such as hydrochloric acid, hydrobromic acid, or hydroiodic acid can also be used.
- the form of the complex includes, for example, an acetylacetone complex, a carbonyl complex, an ammine complex, a hydride complex and the like.
- An acetylacetonate complex can also be formed by mixing acetylacetone with the salt solution.
- the content of metal in the raw material solution is not particularly limited, and can be set appropriately according to the purpose. It is preferably 0.001 mol/L or more and 2 mol/L or less, and more preferably 0.01 mol/L or more and 0.7 mol/L or less.
- the raw material solution may contain a dopant.
- the dopants may be n-type dopants such as tin, silicon, germanium, titanium, zirconium, vanadium or niobium, or p-type dopants such as copper, silver, cobalt, iridium, rhodium, magnesium, nickel, etc. A type dopant or the like is used.
- the method of mixing the atomized raw material solution and the carrier gas to form the mixture is not particularly limited, and is a known method. can be used.
- the type of carrier gas is not particularly limited, and in addition to inert gases such as nitrogen and argon, reducing gases such as air, oxygen, ozone, hydrogen and forming gas can also be used, and a plurality of these gases can be mixed and used. can also
- the flow rate of the carrier gas may be appropriately set depending on the size of the substrate and the size of the film forming chamber, and can be set to, for example, about 0.01 to 100 L/min.
- the method of supplying the mixture to the substrate to form a film are not particularly limited, and known methods can be used.
- Example 1 [Device]
- a nitrogen cylinder was used as a carrier gas supply means 111, and a raw material container 120 made of borosilicate glass was connected with a pipe 113 made of PFA.
- a quartz deposition chamber 131 was prepared, and a supply pipe 134 made of quartz and a raw material container 120 were connected to the raw material container by a pipe 124 made of PFA.
- the exhaust port 133 of the film formation chamber 131 was connected to a scrubber (abatement means 137) through a pipe 136 made of vinyl chloride.
- the stage 135 is made of silicon carbide, and a resistance heater is installed below the stage 135 as a heating means 132 for the stage 135 .
- stage 135 and a pump (Chemker 410 manufactured by Rocker Co.) having a PFA exhaust means 142 in contact with the gas are connected by a Hastelloy pipe 141, and a mist trap with a PFA membrane filter is used as an exhaust abatement means 143 for the pump exhaust.
- a pipe 144 made of PFA was connected to the pump.
- a c-plane sapphire substrate having a diameter of about 10 cm and a thickness of 0.7 mm was placed on a stage and fixed by adsorption with a pump. When the pressure inside the pipe 141 at this time was measured, it was 28 kPa.
- a solution having a gallium concentration of 0.05 mol/L was prepared by dissolving gallium acetylacetonate in an acid solution obtained by mixing hydrochloric acid and pure water, and used as a raw material solution 121 .
- the pH of this solution was measured and found to be 0.9.
- the raw material container 120 was filled with the raw material solution 121, and the raw material solution 121 was atomized by applying ultrasonic vibration of 2.4 MHz.
- Nitrogen gas was introduced from a nitrogen cylinder into the raw material container 120 at 5 L/min, and the generated mixture was supplied to the film forming chamber 131 to form a film. After that, the same procedure was repeated to prepare a total of 10 samples. Measurement by XRD (Rigaku SmartLab) confirmed that the film formed on the substrate was ⁇ -phase Ga 2 O 3 . After that, rocking curves were further measured for all the samples, and half widths were evaluated.
- Example 1 A film was formed in the same manner as in Example 1, except that the substrate was not fixed by suction. After that, the same procedure was repeated to form films a total of 10 times, and the substrate was cracked 4 times. XRD measurement confirmed that the films formed on the substrates of the remaining six substrates were ⁇ -phase Ga 2 O 3 . After that, the rocking curves of the 6 samples thus produced were further measured to evaluate the half-value width.
- Example 2 [Pipe cooling]
- the piping from the stage to the pump has the configuration shown in FIG. Film formation and evaluation were performed in the same manner as in Example 1 except for the above.
- Table 1 shows the average values of the rocking curve half-value widths of the films obtained in Examples 1 and 2 and Comparative Example 1.
- a crystalline semiconductor film having a high crystal orientation was stably obtained, whereas in the crystalline semiconductor film of the comparative example, the crystal orientation was remarkably lowered.
- the substrate since the substrate was not fixed, the heating of the substrate was insufficient, and the temperature of the film forming surface was lowered.
- a hydrochloric acid aqueous solution having a pH of 0.9 was prepared by mixing only hydrochloric acid with pure water.
- the raw material container 120 of the film forming apparatus used in Example 1 was filled with the hydrochloric acid aqueous solution, and then atomized.
- a sapphire substrate having a diameter of about 10 cm and a thickness of 0.7 mm was placed on the stage 135 and fixed by suction with a pump.
- nitrogen gas was introduced into the raw material container 120 at 5 L/min, and the generated gas mixture was supplied to the film forming chamber 131 . This state was maintained for an accumulated 1000 hours, and the pressure in the pipe 141 during this period was measured and found to be constant at 28 ⁇ 2 kPa.
- Reference example 2 The experiment and the pressure measurement in the pipe 141 were performed in the same manner as in Reference Example 1, except that the stage 135 and the pump were connected by an iron pipe 141 .
- the pressure inside the pipe 141 increased to 84 kPa after 800 hours. Corrosion was found in the pipe 141 .
- the present invention is not limited to the above embodiments.
- the above-described embodiment is an example, and any device having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same effect is the present invention. included in the technical scope of
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Abstract
Description
原料溶液を霧化して原料ミストを発生させる霧化手段と、
前記原料ミストを搬送するキャリアガス供給手段と、
前記原料ミストと前記キャリアガスが混合された混合気を基体表面に供給するミスト供給手段と、
前記基体を載置するステージと、
前記基体を加熱する加熱手段と、
前記ステージに直接または間接的に配管接続された排気手段と、
を具備するものである成膜装置を提供する。
前記基体を前記ステージに載置するステップと、
前記排気手段によって前記基体を真空吸着することにより前記ステージに固定するステップと、
前記基体を加熱するステップと、
前記原料溶液を霧化するステップと、
前記霧化された原料溶液と前記キャリアガスを混合させて前記混合気を形成するステップと、
前記混合気を前記基体に供給して前記基体上に成膜を行うステップを含む
ことを特徴とする結晶性半導体膜の成膜方法を提供する。
原料溶液を霧化して原料ミストを発生させる霧化手段と、
前記原料ミストを搬送するキャリアガス供給手段と、
前記原料ミストと前記キャリアガスが混合された混合気を基体表面に供給するミスト供給手段と、
前記基体を載置するステージと、
前記基体を加熱する加熱手段と、
前記ステージに直接または間接的に配管接続された排気手段と、
を具備するものである成膜装置である。
本発明の成膜装置は、霧化手段と、キャリアガス供給手段と、ミスト供給手段と、基体を載置するステージと、加熱手段と、前記ステージに直接または間接的に配管接続された排気手段と、を具備するものである成膜装置である。以下詳細について説明する。
原料溶液121はミスト化が可能であれば特に限定されず、金属を錯体または塩の形態で、水や有機溶媒である溶媒に溶解あるいは分散させたものを用いることができる。
原料溶液121の霧化手段123は、原料溶液121を霧化または液滴化できさえすれば特に限定されず、公知の手段であってよいが、本発明においては、超音波を用いる霧化手段が好ましい。超音波を用いて得られたミストまたは液滴は、初速度がゼロであり、空中に浮遊するので好ましく、例えば、スプレーのように吹き付けるのではなく、空間に浮遊してガスとして搬送することが可能なミストであるので衝突エネルギーによる損傷がないため非常に好適である。液滴サイズは、特に限定されず、数mm程度の液滴であってもよいが、好ましくは50μm以下であり、より好ましくは0.1~10μmである。
また、原料容器120は、成膜する材料などに応じて複数台を備えていても良い。またこの場合、複数の原料容器120から成膜室131へ供給される混合気152は、それぞれ独立して成膜室131に供給されても良いし、配管124中、あるいは混合用の容器(不図示)などを別途設けて混合しても良い。
キャリアガス供給手段111は、キャリアガス151を供給する。キャリアガス151の種類は特に限定されず、窒素やアルゴンといった不活性ガスの他、空気、酸素、オゾン、あるいは水素やフォーミングガスといった還元ガスを用いることもできるし、これらのガスを複数混合して用いることもできる。キャリアガスの流量は、基体サイズや成膜室の大きさにより適宜設定すればよく、例えば0.01~100L/分程度とすることができる。
成膜室131には、配管124に連結され、混合気152を成膜室131内に供給する供給管134が設置されている。供給管134は、たとえば石英やガラス、あるいは樹脂製のチューブ等を使用することができる。また供給管134からのミスト供給に影響を及ぼさない位置に排気ガスの排気口133を設けていて良い。また排気口133は配管136を介して除害手段137に接続されていてもよい。また配管136または除害手段137は、排気流量や外気導入量を調節する手段をさらに備えていて良い。除害手段137は、排気ガスに含まれる有害物質を除去できるものであれば特に限定されず、例えばミストトラップ、ウェットスクラバー、燃焼除害装置、バグフィルターといった公知の技術を広く適用することができる。
ミスト供給手段160は、混合気152を基体130表面に供給するものであれば特に限定されない。例えば、配管124と供給管134を合わせてミスト供給手段160とすることができる。
加熱手段132には公知の加熱手段が適用でき、抵抗加熱、電磁誘導加熱、あるいはランプ加熱などが好適に用いられる。
ステージ135の材料は、成膜に用いる原料の酸性度や加熱温度などのプロセス条件に応じて適宜選択されれば良いが、特にステージ135の表面の少なくとも一部がニッケル合金、グラファイト、炭化ケイ素、酸化アルミ、窒化アルミ、石英であるのが良く、原料溶液に対してより高い耐蝕性を求める場合には、炭化ケイ素、酸化アルミ、窒化アルミ、石英であるのがより好ましい。尚、ニッケル合金とはニッケルを50%以上含む合金を指す。
配管113、124は原料溶液121や成膜室131内外における温度などに対して十分な安定性を持つものであれば特に限定されず、石英の他、ポリエチレン、ポリプロピレン、塩化ビニル、シリコン樹脂、ウレタン樹脂、フッ素樹脂などといった一般的な樹脂製の配管を広く用いることができる。
配管141の放熱をより積極的に促す場合には、図2に示すように、ステージ135と排気手段142を接続する配管241の任意の箇所に冷却手段238を備えていてもよい。冷却手段238は公知の冷却方法が広く適用でき、空冷でも良いし水冷でも良い。また金属ブロックや放熱フィンを併用しても良いし、上記耐熱材で構成した配管241の長さや形状を調整して放熱を促すようにしたものでもよい。
排気手段142は、エジェクターあるいは真空ポンプが好適に用いられる。また、排気手段142の接ガス部が、ポリエチレン、ポリプロピレン、塩化ビニル、ポリスチレン、ポリ酢酸ビニル、ウレタン樹脂、フッ素樹脂、アクリロニトリルブタジエンスチレン樹脂、アクリル樹脂、ポリアミド、ポリイミド、ポリアミドイミド、ナイロン、アセタール樹脂、ポリカーボネート、ポリフェニレンエーテル、ポリエステル、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリオレフィン、ポリフェニレンサルファイド、ポリサルフォン、ポリエーテルサルフォン、ポリアリレート、ポリエーテルエーテルケトン、天然ゴム、ブタジエンゴム、スチレンゴム、スチルゴム、エチレン・プロピレンゴム、ニトリルゴム、アクリルゴム、ウレタンゴム、シリコーンゴム、フッ素ゴム、ソーダガラス、ホウ珪酸ガラス、石英ガラス、炭化シリコン、窒化アルミニウム、酸化アルミニウム、ニッケル合金のいずれか、またはこれらの組合せで構成されているとよい。このようにすることで、成膜に反応性の高い原料溶液を用いた場合でも機器が損傷を受けることがなくなるので、継続して安定的に基体の固定が可能になる。
上述のように、前記排気手段に配管接続された除害手段143を備えることが好ましい。この場合除害手段143は、ステージ135から吸引された排気ガスに含まれる有害物質を除去できるものであれば特に限定されず、例えばミストトラップ、ウェットスクラバー、燃焼除害装置、バグフィルターといった公知の技術を広く適用することができる。これにより、排気ガスに含まれる有害物質を除去できるため、配管内の真空度を安定して維持できるものとなる。
また、本発明では、成膜装置を用いた結晶性半導体膜の成膜方法であって、前記基体を前記ステージに載置するステップと、前記排気手段によって前記基体を真空吸着することにより前記ステージに固定するステップと、前記基体を加熱するステップと、前記原料溶液を霧化するステップと、前記霧化された原料溶液と前記キャリアガスを混合させて前記混合気を形成するステップと、前記混合気を前記基体に供給して前記基体上に成膜を行うステップを含む結晶性半導体膜の成膜方法を提供する。即ち、本発明の上記成膜装置を用いた結晶性半導体膜の成膜方法であって、原料溶液をミスト化し、ミスト化された原料溶液(原料ミスト)を前記成膜装置のステージに吸着固定された基体に供給して前記基体上に成膜を行うことを特徴とする結晶性半導体膜の成膜方法である。
[装置]
図1の成膜装置において、キャリアガス供給手段111に窒素ボンベを用い、ホウ珪酸ガラス製の原料容器120をPFA製の配管113で接続した。また石英製の成膜室131を用意し、石英製の供給管134と原料容器120をPFA製の配管124で原料容器に接続した。また成膜室131の排気口133を塩化ビニル製の配管136でスクラバー(除害手段137)に接続した。ステージ135は炭化ケイ素製であり、ステージ135の下部にステージ135の加熱手段132として抵抗加熱ヒーターを設置した。またステージ135と接ガス部がPFAの排気手段142であるポンプ(Rocker社製Chemker410)をハステロイ製の配管141で接続し、さらにポンプの排気の除害手段143としてPFAメンブレンフィルター付きのミストトラップをPFA製の配管144でポンプに接続した。
直径約10cm、厚さ0.7mmのc面サファイア基体をステージに載置してポンプで吸着固定した後、ヒーターでステージを加熱してステージ温度を500℃に保った。この時の配管141内の圧力を測定したところ、28kPaであった。
塩酸と純水を混合した酸溶液にガリウムアセチルアセトナートを溶解してガリウム濃度0.05mol/Lの溶液を用意し、原料溶液121とした。この溶液のpHを測定したところ、0.9であった。
次に、原料容器120に原料溶液121を充填し、原料溶液121に2.4MHzの超音波振動を加えて霧化した。
窒素ボンベから窒素ガスを5L/分で原料容器120に導入し、生成された混合気を成膜室131に供給して成膜をおこなった。
この後、同様の手順を繰り返し、合計10枚の試料を作製した。
XRD(Rigaku SmartLab)による測定により、基体上に形成された膜はα相のGa2O3であることが確認された。
この後、全試料についてさらにロッキングカーブを測定し、半値幅を評価した。
基板の吸着固定を行わなかったことを除き、実施例1と同様に成膜をおこなった。
この後、同様の手順を繰り返し、合計10回成膜を行ったが、このうち4回は基体が割れた。
割れずに残った6枚については、XRD測定により、基体上に形成された膜がα相のGa2O3であることが確認された。
この後、作製した6枚の試料についてさらにロッキングカーブを測定し、半値幅を評価した。
図1の成膜装置において、ステージからポンプまでの配管を図2の構成とし、ハステロイ製の配管241aにヒートシンクを取り付け、さらにPFA製の配管241bで配管241aとポンプを接続した。
以上の他は実施例1と同様に成膜と評価を行った。
純水に塩酸のみを混合してpH0.9の塩酸水溶液を用意した。
次に該塩酸水溶液を実施例1で使用した成膜装置の原料容器120に充填し、さらに霧化した。
次に、直径約10cm、厚さ0.7mmのサファイア基板をステージ135に載置してポンプで吸着固定した後、ヒーターでステージを加熱してステージ温度を500℃に保った。
次に窒素ガスを5L/分で原料容器120に導入し、生成された混合気を成膜室131に供給した。
この状態を積算1000時間保持し、この間における配管141内の圧力を測定したところ、28±2kPaで一定であった。
ステージ135とポンプを鉄製の配管141で接続した他は、参考例1と同様に実験と配管141内の圧力測定を行った。配管141内の圧力は800時間後に84kPaまで上昇した。配管141には腐食が認められた。
Claims (10)
- 成膜装置であって、
原料溶液を霧化して原料ミストを発生させる霧化手段と、
前記原料ミストを搬送するキャリアガス供給手段と、
前記原料ミストと前記キャリアガスが混合された混合気を基体表面に供給するミスト供給手段と、
前記基体を載置するステージと、
前記基体を加熱する加熱手段と、
前記ステージに直接または間接的に配管接続された排気手段と、
を具備するものであることを特徴とする成膜装置。 - 前記ステージと前記排気手段を直接または間接的に前記配管接続する配管が、ポリエチレン、ポリプロピレン、塩化ビニル、ポリスチレン、ポリ酢酸ビニル、ウレタン樹脂、フッ素樹脂、アクリロニトリルブタジエンスチレン樹脂、アクリル樹脂、ポリアミド、ポリイミド、ポリアミドイミド、ナイロン、アセタール樹脂、ポリカーボネート、ポリフェニレンエーテル、ポリエステル、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリオレフィン、ポリフェニレンサルファイド、ポリサルフォン、ポリエーテルサルフォン、ポリアリレート、ポリエーテルエーテルケトン、天然ゴム、ブタジエンゴム、スチレンゴム、スチルゴム、エチレン・プロピレンゴム、ニトリルゴム、アクリルゴム、ウレタンゴム、シリコーンゴム、フッ素ゴム、ソーダガラス、ホウ珪酸ガラス、石英ガラス、炭化シリコン、窒化アルミニウム、酸化アルミニウム、ニッケル合金、ステンレスのいずれか、またはこれらの組合せで構成されているものであることを特徴とする請求項1に記載の成膜装置。
- 更に、前記排気手段に配管接続された除害手段を具備するものであることを特徴とする請求項1または請求項2に記載の成膜装置。
- 前記排気手段と前記除害手段を前記配管接続する配管が、ポリエチレン、ポリプロピレン、塩化ビニル、ポリスチレン、ポリ酢酸ビニル、ウレタン樹脂、フッ素樹脂、アクリロニトリルブタジエンスチレン樹脂、アクリル樹脂、ポリアミド、ポリイミド、ポリアミドイミド、ナイロン、アセタール樹脂、ポリカーボネート、ポリフェニレンエーテル、ポリエステル、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリオレフィン、ポリフェニレンサルファイド、ポリサルフォン、ポリエーテルサルフォン、ポリアリレート、ポリエーテルエーテルケトン、天然ゴム、ブタジエンゴム、スチレンゴム、スチルゴム、エチレン・プロピレンゴム、ニトリルゴム、アクリルゴム、ウレタンゴム、シリコーンゴム、フッ素ゴム、ソーダガラス、ホウ珪酸ガラス、石英ガラス、炭化シリコン、窒化アルミニウム、酸化アルミニウム、ニッケル合金、ステンレスのいずれか、またはこれらの組合せで構成されているものであることを特徴とする請求項3に記載の成膜装置。
- 前記排気手段の接ガス部が、ポリエチレン、ポリプロピレン、塩化ビニル、ポリスチレン、ポリ酢酸ビニル、ウレタン樹脂、フッ素樹脂、アクリロニトリルブタジエンスチレン樹脂、アクリル樹脂、ポリアミド、ポリイミド、ポリアミドイミド、ナイロン、アセタール樹脂、ポリカーボネート、ポリフェニレンエーテル、ポリエステル、ポリエチレンテレフタレート、ポリブチレンテレフタレート、ポリオレフィン、ポリフェニレンサルファイド、ポリサルフォン、ポリエーテルサルフォン、ポリアリレート、ポリエーテルエーテルケトン、天然ゴム、ブタジエンゴム、スチレンゴム、スチルゴム、エチレン・プロピレンゴム、ニトリルゴム、アクリルゴム、ウレタンゴム、シリコーンゴム、フッ素ゴム、ソーダガラス、ホウ珪酸ガラス、石英ガラス、炭化シリコン、窒化アルミニウム、酸化アルミニウム、ニッケル合金のいずれか、またはこれらの組合せで構成されているものであることを特徴とする請求項1から請求項4のいずれか1項に記載の成膜装置。
- 前記ステージと前記排気手段を直接または間接的に前記配管接続する配管に、該配管を冷却する冷却手段をさらに具備するものであることを特徴とする請求項1から請求項5のいずれか1項に記載の成膜装置。
- 請求項1から請求項6のいずれか1項に記載の成膜装置を用いた結晶性半導体膜の成膜方法であって、
前記基体を前記ステージに載置するステップと、
前記排気手段によって前記基体を真空吸着することにより前記ステージに固定するステップと、
前記基体を加熱するステップと、
前記原料溶液を霧化するステップと、
前記霧化された原料溶液と前記キャリアガスを混合させて前記混合気を形成するステップと、
前記混合気を前記基体に供給して前記基体上に成膜を行うステップを含む
ことを特徴とする結晶性半導体膜の成膜方法。 - 更に、前記原料溶液のpHを0.4以上4.0以下とすることを特徴とする請求項7に記載の結晶性半導体膜の成膜方法。
- 前記基体として主表面積が15cm2以上のものを用いることを特徴とする請求項7または請求項8に記載の結晶性半導体膜の成膜方法。
- 前記ステージに固定するステップにおいて、配管内の真空度を80kPa以下とすることを特徴とする請求項7から請求項9のいずれか1項に記載の結晶性半導体膜の成膜方法。
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JP2020107636A (ja) | 2018-12-26 | 2020-07-09 | 株式会社Flosfia | 結晶性酸化物膜 |
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JPH07245265A (ja) * | 1994-03-03 | 1995-09-19 | Fujitsu Ltd | 気相成長装置 |
JP2004158554A (ja) * | 2002-11-05 | 2004-06-03 | Rorze Corp | 薄板状物スピン装置およびこれを用いた薄板状物処理システム |
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JP2020188170A (ja) | 2019-05-15 | 2020-11-19 | トヨタ自動車株式会社 | ミスト生成装置及び成膜装置 |
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