JP2023056328A - 成膜装置およびこれを用いた結晶性半導体膜の成膜方法 - Google Patents

成膜装置およびこれを用いた結晶性半導体膜の成膜方法 Download PDF

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JP2023056328A
JP2023056328A JP2021165618A JP2021165618A JP2023056328A JP 2023056328 A JP2023056328 A JP 2023056328A JP 2021165618 A JP2021165618 A JP 2021165618A JP 2021165618 A JP2021165618 A JP 2021165618A JP 2023056328 A JP2023056328 A JP 2023056328A
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rubber
substrate
raw material
forming apparatus
film forming
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JP2021165618A
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Japanese (ja)
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JP2023056328A5 (https=
Inventor
洋 橋上
Hiroshi Hashigami
宗之 小嶋
Muneyuki KOJIMA
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Shin Etsu Chemical Co Ltd
Shin Etsu Engineering Co Ltd
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Shin Etsu Chemical Co Ltd
Shin Etsu Engineering Co Ltd
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Application filed by Shin Etsu Chemical Co Ltd, Shin Etsu Engineering Co Ltd filed Critical Shin Etsu Chemical Co Ltd
Priority to JP2021165618A priority Critical patent/JP2023056328A/ja
Priority to EP22878146.4A priority patent/EP4415028A4/en
Priority to US18/693,599 priority patent/US20240234140A1/en
Priority to KR1020247011095A priority patent/KR20240067080A/ko
Priority to CN202280067456.2A priority patent/CN118120047A/zh
Priority to PCT/JP2022/025860 priority patent/WO2023058273A1/ja
Priority to TW111126451A priority patent/TW202315968A/zh
Publication of JP2023056328A publication Critical patent/JP2023056328A/ja
Publication of JP2023056328A5 publication Critical patent/JP2023056328A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45512—Premixing before introduction in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3434—Deposited materials, e.g. layers characterised by the chemical composition being oxide semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Dispersion Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP2021165618A 2021-10-07 2021-10-07 成膜装置およびこれを用いた結晶性半導体膜の成膜方法 Pending JP2023056328A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2021165618A JP2023056328A (ja) 2021-10-07 2021-10-07 成膜装置およびこれを用いた結晶性半導体膜の成膜方法
EP22878146.4A EP4415028A4 (en) 2021-10-07 2022-06-29 FILM FORMING APPARATUS AND METHOD FOR FORMING CRYSTALLINE SEMICONDUCTIVE FILM INVOLVING THIS APPARATUS
US18/693,599 US20240234140A1 (en) 2021-10-07 2022-06-29 Film forming apparatus and method of forming crystalline semiconductor film using the same
KR1020247011095A KR20240067080A (ko) 2021-10-07 2022-06-29 성막장치 및 이를 이용한 결정성 반도체막의 성막방법
CN202280067456.2A CN118120047A (zh) 2021-10-07 2022-06-29 成膜装置及使用有该成膜装置的结晶性半导体膜的成膜方法
PCT/JP2022/025860 WO2023058273A1 (ja) 2021-10-07 2022-06-29 成膜装置およびこれを用いた結晶性半導体膜の成膜方法
TW111126451A TW202315968A (zh) 2021-10-07 2022-07-14 成膜裝置及使用此成膜裝置的結晶性半導體膜的成膜方法

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JP2021165618A JP2023056328A (ja) 2021-10-07 2021-10-07 成膜装置およびこれを用いた結晶性半導体膜の成膜方法

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JP2023056328A true JP2023056328A (ja) 2023-04-19
JP2023056328A5 JP2023056328A5 (https=) 2024-03-27

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US (1) US20240234140A1 (https=)
EP (1) EP4415028A4 (https=)
JP (1) JP2023056328A (https=)
KR (1) KR20240067080A (https=)
CN (1) CN118120047A (https=)
TW (1) TW202315968A (https=)
WO (1) WO2023058273A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025158494A1 (ja) * 2024-01-22 2025-07-31 株式会社ニコン ミスト成膜装置、及びミスト成膜方法
JP7731648B1 (ja) * 2024-03-06 2025-09-01 株式会社Tmeic 基材表面処理装置

Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07245265A (ja) * 1994-03-03 1995-09-19 Fujitsu Ltd 気相成長装置
JPH07321056A (ja) * 1994-05-20 1995-12-08 Sony Corp 横型気相成長装置
JP2001085335A (ja) * 1999-09-10 2001-03-30 Fuji Xerox Co Ltd 半導体気相成長装置
JP2002025909A (ja) * 2000-06-30 2002-01-25 Sony Corp 成膜装置用除害装置及びこれを用いた成膜装置における除害方法
JP2002305188A (ja) * 1993-12-22 2002-10-18 Tokyo Electron Ltd 処理装置及び処理方法
JP2004158554A (ja) * 2002-11-05 2004-06-03 Rorze Corp 薄板状物スピン装置およびこれを用いた薄板状物処理システム
JP2006100589A (ja) * 2004-09-29 2006-04-13 Toshiba Corp 成膜装置のクリーニング方法および成膜装置
JP2012119591A (ja) * 2010-12-02 2012-06-21 Fuji Electric Co Ltd 吸着装置および吸着方法
JP2013004777A (ja) * 2011-06-17 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法および成膜装置
JP2020174153A (ja) * 2019-04-12 2020-10-22 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法
JP2021101482A (ja) * 2018-12-19 2021-07-08 信越化学工業株式会社 半導体膜、成膜方法及び成膜装置
JP6925548B1 (ja) * 2020-07-08 2021-08-25 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法及び成膜装置
JP2021136445A (ja) * 2020-02-27 2021-09-13 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置並びに半導体膜

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5793732B2 (ja) 2011-07-27 2015-10-14 高知県公立大学法人 ドーパントを添加した結晶性の高い導電性α型酸化ガリウム薄膜およびその生成方法
JP7315137B2 (ja) 2018-12-26 2023-07-26 株式会社Flosfia 結晶性酸化物膜
JP2020188170A (ja) 2019-05-15 2020-11-19 トヨタ自動車株式会社 ミスト生成装置及び成膜装置

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002305188A (ja) * 1993-12-22 2002-10-18 Tokyo Electron Ltd 処理装置及び処理方法
JPH07245265A (ja) * 1994-03-03 1995-09-19 Fujitsu Ltd 気相成長装置
JPH07321056A (ja) * 1994-05-20 1995-12-08 Sony Corp 横型気相成長装置
JP2001085335A (ja) * 1999-09-10 2001-03-30 Fuji Xerox Co Ltd 半導体気相成長装置
JP2002025909A (ja) * 2000-06-30 2002-01-25 Sony Corp 成膜装置用除害装置及びこれを用いた成膜装置における除害方法
JP2004158554A (ja) * 2002-11-05 2004-06-03 Rorze Corp 薄板状物スピン装置およびこれを用いた薄板状物処理システム
JP2006100589A (ja) * 2004-09-29 2006-04-13 Toshiba Corp 成膜装置のクリーニング方法および成膜装置
JP2012119591A (ja) * 2010-12-02 2012-06-21 Fuji Electric Co Ltd 吸着装置および吸着方法
JP2013004777A (ja) * 2011-06-17 2013-01-07 Renesas Electronics Corp 半導体装置の製造方法および成膜装置
JP2021101482A (ja) * 2018-12-19 2021-07-08 信越化学工業株式会社 半導体膜、成膜方法及び成膜装置
JP2020174153A (ja) * 2019-04-12 2020-10-22 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法
JP2021136445A (ja) * 2020-02-27 2021-09-13 信越化学工業株式会社 成膜用霧化装置及びこれを用いた成膜装置並びに半導体膜
JP6925548B1 (ja) * 2020-07-08 2021-08-25 信越化学工業株式会社 酸化ガリウム半導体膜の製造方法及び成膜装置

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WO2023058273A1 (ja) 2023-04-13
US20240234140A1 (en) 2024-07-11
EP4415028A4 (en) 2026-02-18
KR20240067080A (ko) 2024-05-16
EP4415028A1 (en) 2024-08-14
CN118120047A (zh) 2024-05-31
TW202315968A (zh) 2023-04-16

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