WO2023017825A1 - Dispositif à ondes élastiques, et procédé de fabrication de celui-ci - Google Patents

Dispositif à ondes élastiques, et procédé de fabrication de celui-ci Download PDF

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Publication number
WO2023017825A1
WO2023017825A1 PCT/JP2022/030446 JP2022030446W WO2023017825A1 WO 2023017825 A1 WO2023017825 A1 WO 2023017825A1 JP 2022030446 W JP2022030446 W JP 2022030446W WO 2023017825 A1 WO2023017825 A1 WO 2023017825A1
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WO
WIPO (PCT)
Prior art keywords
wave device
elastic wave
resin
electrode
piezoelectric layer
Prior art date
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PCT/JP2022/030446
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English (en)
Japanese (ja)
Inventor
毅 山根
真理 佐治
Original Assignee
株式会社村田製作所
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Publication of WO2023017825A1 publication Critical patent/WO2023017825A1/fr

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present invention relates to an elastic wave device and its manufacturing method.
  • Patent Literature 1 discloses an example of an elastic wave device.
  • a supporting substrate a high acoustic velocity film, a low acoustic velocity film and a piezoelectric thin film are laminated.
  • An IDT (Interdigital Transducer) electrode is provided on the piezoelectric thin film.
  • Such a laminated structure is intended to confine surface acoustic waves to the piezoelectric thin film side.
  • materials for the support substrate include Si.
  • An object of the present invention is to provide an elastic wave device and a method of manufacturing the same in which the energy of elastic waves can be confined on the piezoelectric layer side and deterioration of conductance is less likely to occur.
  • An acoustic wave device includes a mounting board, a resin member provided on the mounting board and having an opening, and a resin member provided on the mounting board and arranged in the opening of the resin member. and a piezoelectric film member including a piezoelectric layer; an acoustic wave element having a functional electrode provided on the piezoelectric layer; and a lid member closing the opening of the resin member. and a hollow portion is provided between the lid member and the piezoelectric film member.
  • a method for manufacturing an elastic wave device according to the present invention is a method for manufacturing an elastic wave device according to the present invention, comprising: providing the piezoelectric film member on a support substrate; a step of obtaining a wave element; a step of bonding the acoustic wave element to the mounting board; and forming a sealing resin on the mounting board so as to seal the acoustic wave element.
  • a step of obtaining an intermediate body having the acoustic wave element, the supporting substrate, and the sealing resin a transporting step of transporting the intermediate body; and after exposing the supporting substrate from the sealing resin, forming the resin member by removing the support substrate to form the opening extending to the piezoelectric film member; a step of providing a lid member, performing a step of forming the resin member after the conveying step, and performing a step of providing the lid member on the resin member immediately after the step.
  • an elastic wave device and a method of manufacturing the same, in which the energy of the elastic wave can be confined on the piezoelectric layer side and the conductance is less likely to deteriorate.
  • FIG. 1 is a front cross-sectional view of an elastic wave device according to a first embodiment of the invention.
  • FIG. 2 is a bottom view for explaining the IDT electrodes in the first embodiment of the invention.
  • FIGS. 3(a) to 3(e) are for explaining an example of steps up to mounting an acoustic wave element on a mounting board in the method of manufacturing the acoustic wave device according to the first embodiment of the present invention.
  • It is a front sectional view.
  • 4(a) and 4(b) are front cross-sectional views for explaining an example of steps up to formation of a resin member in the method of manufacturing the elastic wave device according to the first embodiment of the present invention. be.
  • FIG. 1 is a front cross-sectional view of an elastic wave device according to a first embodiment of the invention.
  • FIG. 2 is a bottom view for explaining the IDT electrodes in the first embodiment of the invention.
  • FIGS. 3(a) to 3(e) are for explaining an example of steps up to mounting
  • FIG. 5 is a front cross-sectional view of an elastic wave device according to a first modification of the first embodiment of the invention.
  • FIG. 6 is a front cross-sectional view of an acoustic wave device according to a second modification of the first embodiment of the invention.
  • FIG. 7 is a front cross-sectional view of an elastic wave device according to a third modification of the first embodiment of the invention.
  • FIG. 8 is a front cross-sectional view of an acoustic wave device according to a fourth modification of the first embodiment of the invention.
  • FIG. 9 is a front cross-sectional view of an elastic wave device according to a second embodiment of the invention.
  • FIG. 1 is a front cross-sectional view of an elastic wave device according to the first embodiment of the present invention.
  • the acoustic wave device 10 has a mounting substrate 12, a resin member 13, and an acoustic wave element 1.
  • the acoustic wave device 1 and the resin member 13 are provided on the mounting board 12 .
  • the elastic wave device 1 has a WLP (Wafer Level Package) structure.
  • the resin member 13 is provided with an opening 13a.
  • the elastic wave element 1 is arranged inside the opening 13 a of the resin member 13 .
  • the resin member 13 is a member for protecting the acoustic wave element 1 from the outside.
  • a lid member 14 is provided on the resin member 13 .
  • the lid member 14 closes the opening 13 a of the resin member 13 .
  • the resin member 13 and the lid member 14 are joined together at a joining portion A.
  • the joint portion A is a portion where the resin member 13 and the lid member 14 are joined with the material that constitutes the resin member 13 or the lid member 14 . Therefore, the joint portion A is not a member other than the resin member 13 and the lid member 14 .
  • the joint portion A may be, for example, a resin layer made of a material other than the material forming the resin member 13 and the material forming the lid member 14 .
  • the acoustic wave device 1 has a piezoelectric film member 2.
  • the piezoelectric film member 2 includes a piezoelectric layer 3 .
  • the piezoelectric layer 3 has a first main surface 3a and a second main surface 3b.
  • the first main surface 3a and the second main surface 3b face each other.
  • the first main surface 3a is the main surface on the mounting board 12 side.
  • a dielectric film 4 is provided on the second main surface 3 b of the piezoelectric layer 3 .
  • the piezoelectric film member 2 is a laminated film of a piezoelectric layer 3 and a dielectric film 4 .
  • the piezoelectric film member 2 may be composed of only the piezoelectric layer 3 .
  • An IDT electrode 5 as a functional electrode is provided on the first principal surface 3 a of the piezoelectric layer 3 . By applying an AC voltage to the IDT electrodes 5, elastic waves are excited.
  • a pair of reflectors 6A and 6B are provided on both sides of the IDT electrode 5 on the first main surface 3a in the elastic wave propagation direction.
  • the feature of this embodiment is that the lid member 14 is provided on the resin member 13 and the hollow portion O is provided between the lid member 14 and the piezoelectric film member 2 .
  • the energy of the elastic wave can be confined on the piezoelectric layer 3 side, and deterioration of conductance is less likely to occur. This is explained below.
  • a laminated structure including a support substrate and a piezoelectric layer has been adopted in order to confine the energy of elastic waves in the piezoelectric layer.
  • the support substrate is made of silicon or the like, electrical carriers may occur on the surface of the support substrate. Electrical characteristics such as conductance may deteriorate due to the influence of these electrical carriers.
  • the piezoelectric film member 2 is not laminated with a supporting substrate or the like. That is, the elastic wave device 10 does not have a so-called support substrate such as a silicon substrate, which is included in conventional elastic wave devices.
  • the elastic wave device 10 does not have a so-called support substrate such as a silicon substrate, which is included in conventional elastic wave devices.
  • electrical characteristics such as conductance are not affected by the electrical carriers described above. Therefore, in the elastic wave device 10, degradation of conductance can be suppressed.
  • the piezoelectric film member 2 faces the cavity O, the energy of the elastic wave can be effectively confined to the piezoelectric layer 3 side.
  • the direction viewed from above in FIG. 1 is defined as a plan view, and the direction viewed from below is defined as a bottom view.
  • FIG. 2 is a bottom view for explaining the IDT electrodes in the first embodiment.
  • the IDT electrode 5 has a first busbar 18a and a second busbar 18b, and a plurality of first electrode fingers 19a and a plurality of second electrode fingers 19b.
  • the first busbar 18a and the second busbar 18b face each other.
  • One end of each of the plurality of first electrode fingers 19a is connected to the first bus bar 18a.
  • One end of each of the plurality of second electrode fingers 19b is connected to the second bus bar 18b.
  • the plurality of first electrode fingers 19a and the plurality of second electrode fingers 19b are interdigitated with each other.
  • the first electrode finger 19a and the second electrode finger 19b may be simply referred to as electrode fingers.
  • electrode pads 16 are provided on the first main surface 3a of the piezoelectric layer 3. As shown in FIG. The electrode pads 16 are electrically connected to the IDT electrodes 5 . Furthermore, a support member 7 is provided on the first main surface 3 a so as to surround the IDT electrode 5 . More specifically, the support member 7 has an opening 7a. The IDT electrode 5 is positioned within the opening 7a. Note that the support member 7 covers at least a portion of the electrode pad 16 .
  • a cover member 8 is provided on the support member 7 so as to cover the opening 7a. Thereby, a hollow portion surrounded by the cover member 8, the support member 7 and the piezoelectric layer 3 is provided. An IDT electrode 5 is arranged in this hollow portion.
  • a through electrode 9 is provided so as to penetrate through the cover member 8 and the support member 7 .
  • One end of the through electrode 9 is connected to the electrode pad 16 .
  • a bump 15 is joined to the other end of the through electrode 9 .
  • a plurality of electrode pads 16, through electrodes 9, and bumps 15 are provided.
  • mounting terminals 17 are provided on the mounting board 12 .
  • the bumps 15 are joined to the mounting terminals 17 .
  • the acoustic wave device 1 is mounted on the mounting board 12 .
  • the acoustic wave device 1 may have conductive bonding members other than the bumps 15 .
  • the acoustic wave element 1 may be joined to the mounting substrate 12 by the conductive joining member.
  • the IDT electrodes 5 are electrically connected to the mounting board 12 via electrode pads 16 , through electrodes 9 and bumps 15 .
  • Acoustic wave device 1 including IDT electrodes 5 is electrically connected to other devices through mounting substrate 12 .
  • the thickness of the piezoelectric layer 3 is 1 ⁇ or less.
  • the electrode finger pitch is the center-to-center distance between the adjacent first electrode fingers 19a and second electrode fingers 19b, and the wavelength ⁇ is twice the center-to-center distance defined above. be.
  • materials for the piezoelectric layer 3 include lithium niobate, lithium tantalate, zinc oxide, aluminum nitride, crystal, and PZT (lead zirconate titanate).
  • the dielectric film 4 is a low sound velocity film.
  • a low sound velocity membrane is a relatively low sound velocity membrane. More specifically, the acoustic velocity of the bulk wave propagating through the low velocity film is lower than the acoustic velocity of the bulk wave propagating through the piezoelectric layer 3 .
  • the material of the low sound velocity film for example, glass, silicon oxide, silicon oxynitride, lithium oxide, tantalum pentoxide, or a material whose main component is a compound obtained by adding fluorine, carbon, or boron to silicon oxide can be used. can.
  • the acoustic wave element 1 is provided inside the opening 13a of the resin member 13. More specifically, the portion corresponding to the side surface of the acoustic wave element 1 is joined to the resin member 13 .
  • the portions corresponding to the side surfaces of the acoustic wave element 1 refer to the outer peripheral surfaces of the piezoelectric film member 2, the support member 7, and the cover member 8 in plan view.
  • the side surfaces of the piezoelectric layer 3 in the piezoelectric film member 2 are surfaces connected to the first main surface 3a and the second main surface 3b.
  • the dielectric film 4 as a low-temperature film is mainly composed of silicon oxide. Thereby, the bonding strength between the resin member 13 and the dielectric film 4 can be easily increased. Therefore, the arrangement of the acoustic wave elements 1 can be stabilized, and damage to the acoustic wave device 10 is less likely to occur.
  • the main component means a component that occupies more than 50% of a certain member.
  • the lid member 14 is made of resin. More preferably, the material of the lid member 14 and the material of the resin member 13 are the same. Thereby, the resin member 13 and the lid member 14 can be easily joined.
  • the lid member 14 closes the opening 13 a of the resin member 13 .
  • the portion of the resin member 13 surrounding the hollow portion O can be fixed. Therefore, deformation of the resin member 13 toward the acoustic wave element 1 can be suppressed. Therefore, the stress applied to the acoustic wave element 1 from the resin member 13 side can be reduced. Therefore, the elastic wave device 1 is less likely to be damaged.
  • 3(a) to 3(e) are front sectional views for explaining an example of steps up to mounting an acoustic wave element on a mounting board in the method of manufacturing the acoustic wave device 10 according to the first embodiment. It is a diagram. 4A and 4B are front cross-sectional views for explaining an example of steps up to formation of a resin member in the method of manufacturing the elastic wave device 10 according to the first embodiment.
  • a dielectric film 4 is formed on a piezoelectric substrate 23, as shown in FIG. 3(a). More specifically, the piezoelectric substrate 23 has a first main surface 23a and a second main surface 23b. Dielectric film 4 is formed on second main surface 23b. The dielectric film 4 can be formed by, for example, a sputtering method or a vacuum deposition method. Next, a support substrate 26 is provided on the dielectric film 4 . Note that the dielectric film 4 may be provided on the support substrate 26 and the piezoelectric substrate 23 may be provided on the dielectric film 4 . A laminate of the support substrate 26, the dielectric film 4 and the piezoelectric substrate 23 may be formed.
  • the thickness of the piezoelectric substrate 23 is reduced.
  • the thickness of the piezoelectric substrate 23 may be reduced by using an ion slicing method or the like.
  • the piezoelectric layer 3 is formed as shown in FIG. 3(b). In this manner, the piezoelectric film member 2 is provided on the support substrate 26 .
  • an IDT electrode 5, a pair of reflectors 6A and 6B, electrode pads 16, and respective wirings are formed on the first main surface 3a of the piezoelectric layer 3.
  • the IDT electrode 5, the pair of reflectors 6A and 6B, the electrode pad 16, and each wiring can be formed by, for example, a sputtering method or a vacuum deposition method.
  • the support member 7 is formed on the first main surface 3a of the piezoelectric layer 3. As shown in FIG. More specifically, the support member 7 is formed so as to surround the IDT electrode 5, the pair of reflectors 6A and 6B, and cover at least a portion of the electrode pad 16. As shown in FIG. The support member 7 can be formed by, for example, a photolithographic method. Next, a cover member 8 is formed on the support member 7 so as to cover the opening 7a.
  • through holes are provided in the support member 7 and the cover member 8 so as to reach the electrode pads 16.
  • through electrodes 9 are provided in the through holes.
  • the through-holes can be formed, for example, by irradiation with laser light.
  • the through electrodes 9 can be formed by, for example, a plating method.
  • bumps 15 are provided so as to be joined to the through electrodes 9. Acoustic wave device 1 is thus obtained. Then, the bumps 15 are joined to the mounting terminals 17 on the mounting board 12 . As a result, the acoustic wave device 1 is bonded to the mounting board 12 . That is, the acoustic wave device 1 is mounted on the mounting board 12 .
  • a sealing resin 25 is formed on the mounting substrate 12 so as to seal the acoustic wave device 1 and the support substrate 26. Then, as shown in FIG. The sealing resin 25 is formed by resin molding. Intermediate 20 is thus obtained. Note that the intermediate body 20 has the mounting substrate 12 , the acoustic wave element 1 , the supporting substrate 26 and the sealing resin 25 .
  • the opening 13a shown in FIG. 4(b) is formed in the sealing resin 25.
  • the support substrate 26 is exposed from the sealing resin 25 by grinding the sealing resin 25 .
  • the support substrate 26 is removed by etching or the like.
  • the resin member 13 is formed by forming the opening 13a so as to reach the piezoelectric film member 2.
  • the lid member 14 shown in FIG. 1 is provided on the resin member 13 so as to close the opening 13a. At this time, the resin member 13 and the lid member 14 may be joined by the resin forming the resin member 13 .
  • the elastic wave device 10 is obtained.
  • the piezoelectric film member 2 is supported by the support substrate 26 from the process shown in FIG. 3A to the process shown in FIG. 4A. Therefore, transportation can be easily performed, and the piezoelectric film member 2 and the like are less likely to be damaged during transportation.
  • the transporting step is performed. It is preferable that the transporting step after obtaining the intermediate 20 is performed before forming the opening 13a shown in FIG. 4(b). In this case, the elastic wave element 1 is supported by the support substrate 26 and the entirety of the elastic wave element 1 is covered with the sealing resin 25 .
  • the elastic wave element 1 is less likely to be damaged. It is preferable that the step of forming the resin member 13 is performed after the step of conveying the intermediate 20, and the step of providing the lid member 14 on the resin member 13 is performed immediately after the step. As a result, damage to the acoustic wave element 1 can be suppressed more reliably. Note that "immediately after” refers to performing the next process without performing the transport process after a certain process.
  • the joint A is not a member other than the resin member 13 and the lid member 14.
  • a first variant and a second variant of the first embodiment are shown, differing from the first embodiment only in the joints. Modifications other than the first modification and the second modification are also shown below.
  • the energy of elastic waves can be confined on the piezoelectric layer side, and deterioration of conductance is less likely to occur.
  • the joint B is a resin layer separate from the resin member 13 and the lid member 14 .
  • materials for the resin layer include epoxy resin and polyethylene resin.
  • the joint portion B may be a laminate.
  • the joint portion B may be a laminate including the resin layer of this modified example.
  • the joint C is a metal layer. At least one metal selected from the group consisting of Sn, Ag, Cu, Au, Al, Ge and Ti is preferably used for the metal layer. Thereby, the resin member 13 and the lid member 14 can be suitably joined.
  • the joint portion C may be, for example, a laminate including the metal layer of this modified example.
  • the dielectric film in the piezoelectric film member 2 may be provided in multiple layers.
  • the piezoelectric film member 22 has dielectric films 24A, 24B and 24C. More specifically, a dielectric film 24A is provided on the second main surface 3b of the piezoelectric layer 3. As shown in FIG. A dielectric film 24B is provided on the dielectric film 24A. A dielectric film 24C is provided on the dielectric film 24B. Note that the number of layers of the dielectric film is not particularly limited.
  • the lid member 14 is made of resin.
  • the lid member 14 may be made of a material other than resin.
  • the lid member 24 is a silicon substrate. Since the silicon substrate has high thermal conductivity, it is possible to improve the heat dissipation in the acoustic wave device. Furthermore, the coefficient of linear expansion of the silicon substrate is smaller than the coefficient of linear expansion of the resin. Therefore, deformation of the lid member 24 due to temperature change is small. Therefore, when the temperature changes, the resin member 13 can be restrained by the lid member 24, and deformation of the resin member 13 can be suppressed. Thereby, the stress applied to the acoustic wave element 1 from the resin member 13 side can be reduced. Therefore, damage to the acoustic wave element 1 due to temperature change can be suppressed.
  • FIG. 9 is a front cross-sectional view of an elastic wave device according to the second embodiment.
  • This embodiment differs from the first embodiment in that the piezoelectric film member consists of only the piezoelectric layer 3 and in the configuration of the functional electrodes. Furthermore, the wiring connected to the functional electrodes is also different from that of the first embodiment. Except for the above points, the elastic wave device 30 of this embodiment has the same configuration as the elastic wave device 10 of the first embodiment.
  • the functional electrodes are the first electrode 35A and the second electrode 35B.
  • a first electrode 35A is provided on the first principal surface 3a of the piezoelectric layer 3 .
  • a second electrode 35B is provided on the second main surface 3b.
  • the first electrode 35A and the second electrode 35B face each other with the piezoelectric layer 3 interposed therebetween.
  • a region where the first electrode 35A and the second electrode 35B face each other is an excitation region. Elastic waves are excited in this excitation region.
  • the first electrode 35A is connected to the electrode pad 16. More specifically, the first electrode 35A is connected to the electrode pad 16 by a wiring electrode provided on the first main surface 3a. In this embodiment, the first electrode 35A, the wiring electrode and the electrode pad 16 are integrally provided.
  • an electrode pad 36 is provided on the second main surface 3b of the piezoelectric layer 3. As shown in FIG. A second electrode 35B is connected to the electrode pad 36 . More specifically, the second electrode 35B is connected to the electrode pad 36 by a wiring electrode provided on the second main surface 3b. In this embodiment, the second electrode 35B, the wiring electrode and the electrode pad 36 are integrally provided.
  • the electrode pads 16 are connected to the through electrodes 9 as in the first embodiment. Therefore, the first electrodes 35A are electrically connected to the mounting board 12 via the electrode pads 16, the through electrodes 9 and the bumps 15. As shown in FIG. On the other hand, the electrode pads 36 on the second main surface 3b of the piezoelectric layer 3 are connected to through-electrodes 39 .
  • the through electrode 39 penetrates the cover member 8 , the support member 7 and the piezoelectric layer 3 .
  • a bump 15 is joined to the through electrode 39 . Therefore, the second electrodes 35B are electrically connected to the mounting board 12 via the electrode pads 36, the through electrodes 39 and the bumps 15. As shown in FIG.
  • the piezoelectric film member in the elastic wave device 30 consists of the piezoelectric layer 3 only. However, even when the second electrode 35B is provided on the second main surface 3b of the piezoelectric layer 3, at least one layer of dielectric film may be provided on the second main surface 3b. .
  • the lid member 14 is provided on the resin member 13, and the hollow portion O is provided between the lid member 14 and the piezoelectric film member. Therefore, as in the first embodiment, the energy of the elastic wave can be confined on the piezoelectric layer 3 side, and deterioration of conductance is less likely to occur.
  • the first electrode 35A can be formed by, for example, a sputtering method or a vacuum deposition method, like the IDT electrode 5 in the first embodiment.
  • the second electrodes 35B and the electrode pads 36 may be formed on the second main surface 3b after the piezoelectric layer 3 is formed.
  • the second electrodes 35B and the electrode pads 36 can be formed by, for example, sputtering or vacuum deposition.
  • the through electrode 39 may be formed in the step of forming the through electrode 9 . At this time, through holes are formed through the cover member 8, the support member 7, and the piezoelectric layer 3 by, for example, laser light irradiation. After that, the through electrode 39 may be formed by, for example, a plating method.

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  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention fournit un dispositif à ondes élastiques qui permet de confiner l'énergie d'ondes élastiques côté couche piézoélectrique, et qui est peu susceptible de présenter une dégradation de conductance. L'invention fournit également un procédé de fabrication de ce dispositif à ondes élastiques.　Le dispositif à ondes élastiques (10) de l'invention est équipé : d'un substrat de montage (12) ; d'un élément résine (13) agencé sur le substrat de montage (12), et possédant une partie ouverture (13a) ; d'un élément à ondes élastiques (1) qui possède d'une part un élément film piézoélectrique (2) agencé sur le substrat de montage (12), disposé à l'intérieur de la partie ouverture (13a) de l'élément résine (13) et contenant une couche piézoélectrique (3), et d'une autre part une électrode fonctionnelle (électrode IDT (5)) agencée sur la couche piézoélectrique (3) ; et d'un élément couvercle (14) qui obstrue la partie ouverture (13a) de l'élément résine (13). Une partie cavité (O) est agencée entre l'élément couvercle (14) et l'élément film piézoélectrique (2).
PCT/JP2022/030446 2021-08-11 2022-08-09 Dispositif à ondes élastiques, et procédé de fabrication de celui-ci WO2023017825A1 (fr)

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JP2021-131357 2021-08-11

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283289A (ja) * 2002-03-25 2003-10-03 Kyocera Corp 弾性表面波装置
JP2004254287A (ja) * 2003-01-28 2004-09-09 Fujitsu Media Device Kk 弾性表面波デバイス及びその製造方法
JP2004297693A (ja) * 2003-03-28 2004-10-21 Fujitsu Media Device Kk 弾性表面波デバイスの製造方法及び弾性表面波デバイス
JP2018201083A (ja) * 2017-05-26 2018-12-20 太陽誘電株式会社 電子部品
JP2019125871A (ja) * 2018-01-12 2019-07-25 株式会社村田製作所 弾性波装置
JP2020102768A (ja) * 2018-12-21 2020-07-02 株式会社村田製作所 弾性波装置、及び電子部品モジュール

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003283289A (ja) * 2002-03-25 2003-10-03 Kyocera Corp 弾性表面波装置
JP2004254287A (ja) * 2003-01-28 2004-09-09 Fujitsu Media Device Kk 弾性表面波デバイス及びその製造方法
JP2004297693A (ja) * 2003-03-28 2004-10-21 Fujitsu Media Device Kk 弾性表面波デバイスの製造方法及び弾性表面波デバイス
JP2018201083A (ja) * 2017-05-26 2018-12-20 太陽誘電株式会社 電子部品
JP2019125871A (ja) * 2018-01-12 2019-07-25 株式会社村田製作所 弾性波装置
JP2020102768A (ja) * 2018-12-21 2020-07-02 株式会社村田製作所 弾性波装置、及び電子部品モジュール

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