WO2023157798A1 - Dispositif à ondes élastiques - Google Patents

Dispositif à ondes élastiques Download PDF

Info

Publication number
WO2023157798A1
WO2023157798A1 PCT/JP2023/004756 JP2023004756W WO2023157798A1 WO 2023157798 A1 WO2023157798 A1 WO 2023157798A1 JP 2023004756 W JP2023004756 W JP 2023004756W WO 2023157798 A1 WO2023157798 A1 WO 2023157798A1
Authority
WO
WIPO (PCT)
Prior art keywords
piezoelectric layer
electrode
wave device
support substrate
elastic wave
Prior art date
Application number
PCT/JP2023/004756
Other languages
English (en)
Japanese (ja)
Inventor
徹 山路
琢真 葛下
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Publication of WO2023157798A1 publication Critical patent/WO2023157798A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Definitions

  • the present invention relates to elastic wave devices.
  • Patent Document 1 discloses an example of a surface acoustic wave device having a plurality of IDT (Interdigital Transducer) electrodes. This surface acoustic wave device is obtained by dicing a wafer-shaped piezoelectric substrate on which a plurality of surface acoustic wave device precursors are formed.
  • IDT Interdigital Transducer
  • a surface acoustic wave device precursor has a routing electrode and a plurality of probe electrode pads. After testing using the probe electrode pads, the piezoelectric substrate is divided.
  • microcracks may occur when dividing by dicing.
  • the piezoelectric substrate for example, a laminated substrate of a support substrate and a piezoelectric layer is used. In this case, microcracks may occur between the support substrate and the piezoelectric layer.
  • a surface acoustic wave device is flip-chip mounted on a mounting substrate, for example.
  • stress may accumulate at the interface between the support substrate and the piezoelectric layer, causing the piezoelectric layer to peel off. If the peeling of the piezoelectric layer reaches the portion where the IDT electrodes and wiring are provided, the electrical characteristics of the surface acoustic wave device will deteriorate.
  • An object of the present invention is to provide an acoustic wave device capable of suppressing progress of peeling of the piezoelectric layer and suppressing deterioration of electrical characteristics.
  • a supporting substrate a piezoelectric layer provided on the supporting substrate and including a first piezoelectric layer and a second piezoelectric layer, and the first piezoelectric layer.
  • a functional electrode provided thereon; a bump pad provided on the first piezoelectric layer and electrically connected to the functional electrode; and a bump pad provided on the second piezoelectric layer. and an electrode pad, the first piezoelectric layer and the second piezoelectric layer are separated on the support substrate, and the direction from the center of the support substrate to the outer peripheral edge side in plan view is the outer side.
  • the second piezoelectric layer is located outside the first piezoelectric layer.
  • a support substrate a piezoelectric layer provided on the support substrate, a functional electrode provided on the piezoelectric layer, and a functional electrode provided on the piezoelectric layer a bump pad electrically connected to the functional electrode; and an electrode pad provided on the piezoelectric layer.
  • a through hole is provided in the piezoelectric layer in at least part of the portion between the pad.
  • the elastic wave device of the present invention it is possible to suppress the progress of peeling of the piezoelectric layer, and to suppress the deterioration of the electrical characteristics.
  • FIG. 1 is a schematic front cross-sectional view of an elastic wave device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic plan view of the elastic wave device according to the first embodiment of the invention.
  • FIG. 3 is a schematic front cross-sectional view of an acoustic wave device showing an example in which microcracks occur in a conventional piezoelectric substrate.
  • FIG. 4 is a schematic front cross-sectional view of an acoustic wave device showing an example in which microcracks are generated in the piezoelectric substrate according to the first embodiment of the present invention.
  • FIG. 5 is a schematic plan view showing the electrode structure of the elastic wave resonator according to the first embodiment of the invention.
  • FIG. 6 is a schematic cross-sectional view along line II-II in FIG.
  • FIG. 7 is a schematic plan view of an elastic wave device according to a first modification of the first embodiment of the invention.
  • FIG. 8 is a schematic front cross-sectional view of an elastic wave device according to a second modification of the first embodiment of the invention.
  • FIG. 9 is a schematic plan view of an elastic wave device according to a second embodiment of the invention.
  • FIG. 10 is a schematic plan view of an elastic wave device according to a third embodiment of the invention.
  • FIG. 11 is a schematic plan view of an elastic wave device according to a fourth embodiment of the invention.
  • FIG. 12 is a schematic plan view showing part of a substrate that is divided when obtaining an elastic wave device according to a fourth embodiment of the present invention.
  • FIG. 12 is a schematic plan view showing part of a substrate that is divided when obtaining an elastic wave device according to a fourth embodiment of the present invention.
  • FIG. 13 is a schematic plan view of an elastic wave device according to a fifth embodiment of the invention.
  • FIG. 14 is a schematic plan view showing part of a substrate that is divided when obtaining an elastic wave device according to a fifth embodiment of the present invention.
  • 15A to 15C are diagrams showing examples of alignment marks.
  • FIG. 1 is a schematic front cross-sectional view of an elastic wave device according to a first embodiment of the present invention.
  • an elastic wave resonator which will be described later, is shown by a schematic diagram in which two diagonal lines are added to a rectangle. The same applies to the following schematic front cross-sectional views and schematic plan views.
  • the elastic wave device 1 has a piezoelectric substrate 2 .
  • the piezoelectric substrate 2 has a support substrate 3 and a piezoelectric layer 4 .
  • a piezoelectric layer 4 is provided on a support substrate 3 .
  • the piezoelectric layers 4 include a first piezoelectric layer 4A and a plurality of second piezoelectric layers 4B.
  • the first piezoelectric layer 4A and the plurality of second piezoelectric layers 4B are separated on the support substrate 3 .
  • the number of second piezoelectric layers 4B is not limited.
  • the piezoelectric layer 4 may include only one second piezoelectric layer 4B.
  • the first piezoelectric layer 4A has a first main surface 4a and a second main surface 4b.
  • the first main surface 4a and the second main surface 4b face each other.
  • each of the plurality of second piezoelectric layers 4B has a first principal surface 4c and a second principal surface 4d.
  • the first main surface 4c and the second main surface 4d face each other.
  • a plurality of elastic wave resonators 11 are formed on the first main surface 4a of the first piezoelectric layer 4A.
  • a semiconductor such as silicon or ceramics such as aluminum oxide can be used as the material of the support substrate 3.
  • materials for the piezoelectric layer 4 include lithium tantalate, lithium niobate, zinc oxide, aluminum nitride, crystal, and PZT (lead zirconate titanate).
  • FIG. 2 is a schematic plan view of the elastic wave device according to the first embodiment. 1 is a schematic cross-sectional view taken along line II in FIG.
  • the support substrate 3 has a rectangular shape in plan view. Therefore, the peripheral edge of the support substrate 3 has portions corresponding to four sides and four corner portions.
  • the outer peripheral edge is defined as the outer peripheral edge in plan view.
  • the directions in FIG. Downward. Viewing the elastic wave device 1 from above in FIG. 1 is referred to as plan view, and viewing the acoustic wave device 1 from below is referred to as bottom view.
  • the plurality of second piezoelectric layers 4B are located outside the first piezoelectric layers 4A when the direction from the center of the support substrate 3 to the outer peripheral side is defined as the outside.
  • the first piezoelectric layer 4A is surrounded by a plurality of second piezoelectric layers 4B.
  • the first piezoelectric layer 4A does not reach the outer edge of the support substrate 3 in plan view.
  • a portion of the outer peripheral edge of each second piezoelectric layer 4B and a portion of the outer peripheral edge of the support substrate 3 overlap.
  • a portion between the first piezoelectric layer 4 ⁇ /b>A and the second piezoelectric layer 4 ⁇ /b>B is a groove-shaped portion where the support substrate 3 is exposed from the piezoelectric layer 4 .
  • the plurality of second piezoelectric layers 4B are provided so as not to overlap the corners of the outer periphery of the support substrate 3 in plan view. However, the plurality of second piezoelectric layers 4B may be provided so as to overlap the corner portions in plan view.
  • a plurality of functional electrodes, a plurality of functional wirings 6, a plurality of connection wirings 7, a plurality of electrode pads 8, and a plurality of bump pads 9 are provided on the piezoelectric layer 4.
  • each functional electrode is an IDT electrode 5 . More specifically, a plurality of IDT electrodes 5, a plurality of functional wirings 6, and a plurality of bump pads 9 are provided on the first main surface 4a of the first piezoelectric layer 4A.
  • An electrode pad 8 is provided on each first main surface 4c of each second piezoelectric layer 4B. However, the second piezoelectric layer 4B without the electrode pads 8 may be included.
  • a plurality of functional wirings 6 are connected to one of the IDT electrodes 5, respectively. Some of the functional wirings 6 connect the IDT electrodes 5 together. Another functional wiring 6 connects the bump pad 9 and at least one IDT electrode 5 . On the other hand, each of the plurality of connection wirings 7 connects one of the functional wirings 6 and one of the electrode pads 8 .
  • a plurality of insulating layers 13 are provided on a portion of the support substrate 3 where the piezoelectric layer 4 is not provided. More specifically, each of the plurality of insulating layers 13 is provided between the first piezoelectric layer 4A and the second piezoelectric layer 4B. Each of the plurality of connection wires 7 passes over the insulating layer 13 and extends from the first main surface 4a of the first piezoelectric layer 4A to the first main surface 4c of the second piezoelectric layer 4B.
  • the insulating layer 13 is a resin layer. Note that the insulating layer 13 may be an inorganic dielectric layer. However, the plurality of insulating layers 13 may not be provided.
  • the elastic wave device 1 is obtained by dividing a substrate provided with a plurality of elements by dicing. Prior to this dicing, a plurality of electrode pads 8 are used for testing the electrical characteristics of each element. Then, by dicing, a plurality of electrode pads 8 are cut together with the substrate. Therefore, in plan view, a portion of the outer periphery of each electrode pad 8, a portion of the outer periphery of each second piezoelectric layer 4B, and a portion of the outer periphery of the support substrate 3 overlap.
  • selection of non-defective products is performed. Productivity can be improved by advancing the process only for non-defective devices among a plurality of devices.
  • the acoustic wave device 1 is mounted on a mounting substrate as an acoustic wave element chip. More specifically, each bump pad 9 is provided with a bump. The bumps bond the piezoelectric layer 4 to the mounting substrate. Each IDT electrode 5 is electrically connected to the mounting board via the functional wiring 6, the bump pad 9 and the bump.
  • a feature of this embodiment is that the first piezoelectric layer 4A and the second piezoelectric layer 4B are separated on the support substrate 3, and the second piezoelectric layer 4B is positioned outside the first piezoelectric layer 4A. It's in what you're doing. As a result, progress of peeling of the piezoelectric layer 4 can be suppressed, and deterioration of the electrical characteristics of the acoustic wave device 1 can be suppressed. This is explained below.
  • FIG. 3 is a schematic front cross-sectional view of an acoustic wave device, showing an example of microcracks occurring in a conventional piezoelectric substrate.
  • FIG. 4 is a schematic front cross-sectional view of the elastic wave device showing an example in which microcracks are generated in the piezoelectric substrate according to the first embodiment.
  • microcracks M may occur between the support substrate 103 and the piezoelectric layer 104, as shown in FIG. As the microcracks M progress toward the functional electrodes, the piezoelectric layer 104 may be peeled off. Furthermore, when the acoustic wave device as the acoustic wave element chip is mounted on the mounting board, a large stress is applied to the bump pads 109 . At this time, in the piezoelectric substrate 102, the microcracks M are particularly likely to progress, and the peeling of the piezoelectric layer 104 is particularly likely to progress.
  • the second piezoelectric layer 4B is positioned on the outer peripheral edge side of the support substrate 3, as shown in FIG. Therefore, microcracks M are generated between the second piezoelectric layer 4B and the support substrate 3 .
  • the IDT electrode 5 and the functional wiring 6 are not provided on the second piezoelectric layer 4B, but are provided on the first piezoelectric layer 4A. Therefore, even if the second piezoelectric layer 4B is peeled off, the electrical characteristics of the acoustic wave device 1 are unlikely to deteriorate.
  • the second piezoelectric layer 4B is separated from the first piezoelectric layer 4A. Therefore, peeling of the piezoelectric layer 4 progresses only up to the second piezoelectric layer 4B, and hardly reaches the first piezoelectric layer 4A. In this way, progress of peeling of the piezoelectric layer 4 can be suppressed, and deterioration of the electrical characteristics of the acoustic wave device 1 can be suppressed.
  • FIG. 5 is a schematic plan view showing the electrode structure of the elastic wave resonator in the first embodiment.
  • the wiring connected to the elastic wave resonator is omitted.
  • the functional electrode is the IDT electrode 5 in this embodiment.
  • an AC voltage to the IDT electrodes 5
  • elastic waves are excited.
  • a pair of reflectors 12A and 12B are provided on both sides of the IDT electrode 5 in the elastic wave propagation direction on the first main surface 4a of the first piezoelectric layer 4A.
  • the acoustic wave resonator 11 in this embodiment is a surface acoustic wave resonator.
  • the IDT electrode 5 has a first busbar 18A and a second busbar 18B, and a plurality of first electrode fingers 19A and a plurality of second electrode fingers 19B.
  • the first busbar 18A and the second busbar 18B face each other.
  • One end of each of the plurality of first electrode fingers 19A is connected to the first bus bar 18A.
  • One end of each of the plurality of second electrode fingers 19B is connected to the second bus bar 18B.
  • the plurality of first electrode fingers 19A and the plurality of second electrode fingers 19B are interdigitated with each other.
  • the direction in which the plurality of first electrode fingers 19A and the plurality of second electrode fingers 19B extend is perpendicular to the elastic wave propagation direction.
  • the IDT electrode 5, the reflector 12A, and the reflector 12B may be composed of a laminated metal film, or may be composed of a single layer metal film.
  • FIG. 6 is a schematic cross-sectional view along line II-II in FIG. In FIG. 6, the boundaries between the connection wirings 7 and the functional wirings 6 are indicated by dashed lines.
  • connection wiring 7 passes over the insulating layer 13 .
  • the step between the first piezoelectric layer 4A and the second piezoelectric layer 4B can be reduced. Therefore, disconnection of the connection wiring 7 is unlikely to occur.
  • the thickness of the insulating layer 13 is preferably the same as the thickness of the first piezoelectric layer 4A or the thickness of the second piezoelectric layer 4B. As a result, it is possible to effectively suppress the occurrence of a step in the connection wiring 7 and to effectively suppress disconnection of the connection wiring 7 . However, the thickness of the insulating layer 13 may be different from the thickness of the first piezoelectric layer 4A and the thickness of the second piezoelectric layer 4B.
  • the thickness of the connection wiring 7 is thinner than the thickness of the functional wiring 6 .
  • a configuration in which the insulating layer 13 reduces the step is particularly suitable.
  • the connection wiring 7 may be provided integrally with a part of the metal layer of the functional wiring 6 . In this case, productivity can be improved. Note that the relationship between the thickness of the connection wiring 7 and the thickness of the functional wiring 6 is not limited to the above.
  • the insulating layer 13 is provided on a portion of the portion between the first piezoelectric layer 4A and the second piezoelectric layer 4B.
  • the arrangement of the insulating layer 13 is not limited to the above.
  • the insulating layer 13 is provided over the entire portion of the support substrate 3 where the piezoelectric layer 4 is not provided in plan view.
  • the insulating layer 13 is indicated by hatching. In this case, peeling of the first piezoelectric layer 4A and the second piezoelectric layer 4B can be effectively suppressed.
  • the insulating layer 13 may be provided so as to surround the first piezoelectric layer 4A. More specifically, the first piezoelectric layer 4A has side surfaces 4e. The side surface 4e is connected to the first main surface 4a and the second main surface 4b. The insulating layer 13 may be provided over the side surface 4e and the surface of the support substrate 3, and the insulating layer 13 may not be provided in other portions. Also in this case, peeling of the first piezoelectric layer 4A can be effectively suppressed.
  • the piezoelectric layer 4 is provided directly on the support substrate 3 .
  • the configuration of the piezoelectric substrate 2 is not limited to the above.
  • the piezoelectric substrate 22 has a supporting substrate 3, an intermediate layer 25 and a piezoelectric layer 4.
  • An intermediate layer 25 is provided between the support substrate 3 and the piezoelectric layer 4 . That is, the piezoelectric layer 4 is indirectly provided on the support substrate 3 via the intermediate layer 25 .
  • the intermediate layer 25 may be, for example, a single-layer dielectric film or a laminated film.
  • a dielectric such as silicon oxide, silicon nitride, or silicon oxynitride can be used.
  • the intermediate layer 25 is not provided on part of the support substrate 3 . More specifically, it is preferable that a portion of the support substrate 3 where the piezoelectric layer 4 is not provided and a portion where the intermediate layer 25 is not provided overlap when viewed from above. For example, it is preferable that the portion of the intermediate layer 25 laminated with the first piezoelectric layer 4A and the portion laminated with the second piezoelectric layer 4B are separated on the support substrate 3 . As a result, progress of peeling of the piezoelectric layer 4 can be suppressed more reliably.
  • FIG. 9 is a schematic plan view of an elastic wave device according to the second embodiment.
  • This embodiment differs from the first embodiment in that the piezoelectric layer 34 has only one second piezoelectric layer 34B. This embodiment also differs from the first embodiment in that the electrode pads 8 and the functional wirings 6 are not electrically connected. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device 1 of the first embodiment.
  • a frame-shaped groove G is provided between the first piezoelectric layer 34A and the second piezoelectric layer 34B.
  • the support substrate 3 is exposed from the piezoelectric layer 34 at the groove portion G.
  • the configuration of the piezoelectric layer 34 corresponds to a configuration in which frame-shaped through holes are provided in the piezoelectric layer.
  • the outer peripheral edge of the second piezoelectric layer 34B overlaps the entire outer peripheral edge of the support substrate 3 in plan view. However, it is sufficient that at least a portion of the outer peripheral edge of the second piezoelectric layer 34B overlaps with at least a portion of the outer peripheral edge of the support substrate 3 in plan view.
  • a plurality of electrode pads 8 are provided on the second piezoelectric layer 34B. Note that the groove portion G is formed after the inspection using the plurality of electrode pads 8 . When the groove portion G is formed, the wiring connecting the electrode pad 8 and the functional wiring 6 is cut.
  • the groove portion G can be formed by etching, for example.
  • the first piezoelectric layer 34A and the second piezoelectric layer 34B are separated. Therefore, as in the first embodiment, it is possible to suppress the progress of peeling of the piezoelectric layer 34 and suppress deterioration of the electrical characteristics of the elastic wave device.
  • connection wiring 7 shown in FIG. 2 may be provided.
  • the electrode pads 8 and the functional wirings 6 may be connected by the connection wirings 7 .
  • the insulating layer 13 shown in FIG. 2 may be provided in the trench G.
  • the connection wiring 7 may pass over the insulating layer 13 .
  • the connection wiring 7 may be provided after the groove portion G is formed. After that, the above tests may be performed.
  • FIG. 10 is a schematic plan view of an elastic wave device according to the third embodiment.
  • This embodiment differs from the second embodiment in that the piezoelectric layer 44 is not separated on the support substrate 3 . More specifically, in the piezoelectric layer 44, instead of the groove G, a through hole 44f and a through hole 44g are provided. This embodiment also differs from the second embodiment in that it has connection wirings 7 .
  • the connection wiring 7 is provided on the piezoelectric layer 44 and connects the electrode pads 8 and the functional wiring 6 . Except for the above points, the elastic wave device 41 of this embodiment has the same configuration as the elastic wave device of the second embodiment.
  • a feature of this embodiment is that through holes 44f are provided in the piezoelectric layer 44 in at least part of the portion between the outer peripheral edge of the piezoelectric layer 44 and the bump pad 9 in plan view.
  • the stress can be released by providing the through hole 44f in the piezoelectric layer 44 of the acoustic wave device 41 corresponding to the acoustic wave element chip.
  • progress of microcracks can be suppressed. Therefore, it is possible to suppress the peeling of the piezoelectric layer 44 from progressing to the vicinity of the functional wiring 6 and the IDT electrode 5 .
  • progress of peeling from the outer peripheral side of the piezoelectric layer 44 can be suppressed by providing the through holes 44f. Therefore, deterioration of the electrical characteristics of the elastic wave device 41 can be suppressed.
  • the elastic wave device 41 of this embodiment is also manufactured using dicing, like the elastic wave devices of the first and second embodiments. Therefore, in plan view, a part of the outer peripheral edge of the electrode pad 8, the outer peripheral edge of the piezoelectric layer 44, and the outer peripheral edge of the support substrate 3 overlap. However, it is sufficient that a portion of the outer peripheral edge of the electrode pad 8, at least a portion of the outer peripheral edge of the piezoelectric layer 44, and at least a portion of the outer peripheral edge of the support substrate 3 overlap in plan view.
  • the elastic wave device 41 is provided with four bump pads 9 .
  • Each bump pad is arranged so that the shape connecting the centers of adjacent bump pads 9 becomes a rectangle.
  • the shape of the piezoelectric layer 44 in plan view is rectangular.
  • Each bump pad 9 is arranged so as to face each corner portion of the piezoelectric layer 44 in plan view. In plan view, the shape of the portion of the bump pad 9 facing the corner portion is curved.
  • the shape, arrangement and number of bump pads 9 are not limited to the above.
  • the piezoelectric layer 44 is provided with four through holes 44f.
  • Each through hole 44f has a curved shape in plan view.
  • Each through hole 44 f is provided along a portion of each bump pad 9 facing the corner portion of the piezoelectric layer 44 .
  • the stress can be released effectively.
  • the shape of the through hole 44f is not limited to the above.
  • the shape of the through hole 44f in plan view may be, for example, L-shaped, linear, circular, or elliptical.
  • the shape of the through hole 44f may be an appropriate shape connecting curves or connecting a curve and a straight line.
  • the through hole 44f is preferably provided between the bump pad 9 and the portion of the outer peripheral edge of the piezoelectric layer 44 closest to the bump pad 9 or its vicinity. As a result, progress of peeling of the piezoelectric layer 44 can be effectively suppressed.
  • one through hole 44 f is provided between one bump pad 9 and the outer peripheral edge of the piezoelectric layer 44 .
  • a plurality of through holes 44 f may be provided between one bump pad 9 and the outer peripheral edge of the piezoelectric layer 44 .
  • through holes 44f are provided between all the bump pads 9 and the outer periphery of the piezoelectric layer 44, respectively. However, it is sufficient that a through hole 44 f is provided between at least one bump pad 9 and the outer peripheral edge of the piezoelectric layer 44 .
  • through holes 44g are provided along the long sides of the piezoelectric layer 44. As shown in FIG. More specifically, a through hole 44 g is provided between the elastic wave resonator and the outer peripheral edge of the piezoelectric layer 44 . A pair of through holes 44g are provided along each of the pair of long sides. Thereby, warping of the piezoelectric layer 44 can be suppressed.
  • the shape of the through hole 44g in plan view is linear. Note that the shape of the through hole 44g in plan view is not limited to the above.
  • the through hole 44g may have a portion extending along the long side. 44 g of penetration holes should just be provided along at least one of the long sides. However, the through hole 44g may not be provided.
  • the insulating layer 13 shown in FIG. 2 may be provided in at least part of the through hole 44f or the through hole 44g. Thereby, peeling of the piezoelectric layer 44 can be suppressed. In this case, the connection wiring 7 may pass over the insulating layer 13 .
  • FIG. 11 is a schematic plan view of an elastic wave device according to the fourth embodiment.
  • FIG. 12 is a schematic plan view showing a part of the substrate that is divided when obtaining the elastic wave device according to the fourth embodiment.
  • dicing lines and portions removed by dicing are indicated by dashed lines.
  • wiring electrodes 55 and electrode pads 8 connected to the wiring electrodes 55, which will be described later, are indicated by hatching. Since the groove G is formed after the inspection, the groove G is indicated by a dashed line in FIG. 12 .
  • this embodiment differs from the second embodiment in that wiring electrodes 55A are provided on the piezoelectric layer 34 so as to surround the electrode pads 8. As shown in FIG. More specifically, a plurality of wiring electrodes 55A are provided on the second piezoelectric layer 34B. Except for the above points, the elastic wave device of this embodiment has the same configuration as the elastic wave device of the second embodiment.
  • the wiring electrode 55A reaches the outer edge of the second piezoelectric layer 34B. Therefore, the wiring electrode 55A specifically surrounds the electrode pad 8 in three directions.
  • the wiring electrode 55A surrounds the electrode pad 8 together with the outer peripheral edge of the second piezoelectric layer 34B.
  • Each wiring electrode 55A surrounds one electrode pad 8 on the second piezoelectric layer 34B.
  • the wiring electrode 55A may surround a plurality of electrode pads 8. FIG.
  • the first piezoelectric layer 34A and the second piezoelectric layer 34B are separated on the support substrate 3, as in the second embodiment. Therefore, it is possible to suppress the progress of the peeling of the piezoelectric layer 34 and suppress the deterioration of the electrical characteristics of the acoustic wave device.
  • the substrate 56 shown in FIG. 12 is divided by dicing.
  • a wiring electrode 55A shown in FIG. 11 is formed by removing a part of the wiring electrode 55 shown in FIG. 12 by dicing.
  • the wiring electrodes 55 are provided so as to be connected to some of the plurality of electrode pads 8 and not to be connected to other portions. More specifically, the wiring electrode 55 has a portion provided so as to bypass the electrode pad 8 . The wiring electrode 55 is not connected to the electrode pad 8 around which the wiring electrode 55 is routed. On the other hand, the portion of the wiring electrode 55 other than the portion bypassing the electrode pad 8 extends on the dicing line. A portion of the wiring electrode 55A extending on the dicing line is removed by dicing. A portion of the wiring electrode 55 bypassing the electrode pad 8 becomes a wiring electrode 55A after dicing.
  • the plurality of electrode pads 8 are connected to the wiring electrodes 55 and have the same potential.
  • the wiring electrode 55 is connected to ground potential.
  • the electrode pads 8 not connected to the wiring electrodes 55 are connected to the hot potential.
  • the hot potential in this specification refers to a signal potential.
  • the electrode pattern connected to the ground potential is made common by the wiring electrode 55 including the plurality of electrode pads 8 . Thereby, the stability of measurement in inspection can be improved.
  • the pattern of the wiring electrodes 55 is not limited to the above. Another example of the wiring electrode 55 is shown in the following fifth embodiment. In the fifth embodiment, the electrode corresponding to the wiring electrode 55A after dicing is assumed to be the first wiring electrode.
  • FIG. 13 is a schematic plan view of an elastic wave device according to the fifth embodiment.
  • FIG. 14 is a schematic plan view showing a part of the substrate that is divided when obtaining the elastic wave device according to the fifth embodiment.
  • dicing lines and portions removed by dicing are indicated by dashed lines.
  • the wiring electrodes 65 and the electrode pads 8 connected to the wiring electrodes 65 are indicated by hatching. Since the groove G is formed after the inspection, the groove G is indicated by a dashed line in FIG.
  • a first wiring electrode 65A and a second wiring electrode 65B are provided on the piezoelectric layer . More specifically, a plurality of first wiring electrodes 65A and a plurality of second wiring electrodes 65B are provided on the second piezoelectric layer 34B.
  • This embodiment differs from the fourth embodiment in that a second wiring electrode 65B is provided.
  • the second wiring electrode 65B has a portion provided along the bump pad 9 .
  • the second wiring electrode 65B reaches the outer edge of the second piezoelectric layer 34B.
  • the elastic wave device of this embodiment has the same configuration as the elastic wave device of the fourth embodiment.
  • the first piezoelectric layer 34A and the second piezoelectric layer 34B are separated on the support substrate 3, as in the fourth embodiment. Therefore, it is possible to suppress the progress of the peeling of the piezoelectric layer 34 and suppress the deterioration of the electrical characteristics of the acoustic wave device.
  • the first wiring electrode 65A and the second wiring electrode 65B are formed by removing part of the wiring electrode 65 shown in FIG. 14 by dicing. More specifically, the wiring electrode 65 has a portion provided to bypass the electrode pad 8, a portion extending on the dicing line, a portion extending along the bump pad 9, and a portion extending along the dicing line. and a portion extending toward the A portion of the wiring electrode 65 extending on the dicing line is removed by dicing. A portion of the wiring electrode 65 bypassing the electrode pad 8 becomes the first wiring electrode 65A after dicing. A portion of the wiring electrode 65 extending along the bump pad 9 and a portion extending toward the dicing line become the second wiring electrode 65B after dicing.
  • the wiring electrodes 65 are not provided at the portions where the dicing lines intersect. For example, at the intersection C where the dicing lines intersect, alignment marks such as A1 to A3 shown in FIGS. Marks can be placed.
  • the electrode pattern connected to the ground potential is shared by the wiring electrode 65 . This can improve the stability of measurement in inspection.
  • the first wiring electrode 65A or the second wiring electrode 65B is provided on the piezoelectric layer 44.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

L'invention fournit un dispositif à ondes élastiques qui permet d'inhiber la progression du pelage d'une couche piézoélectrique, et qui permet également d'inhiber la dégradation de caractéristiques électriques.　Le dispositif à ondes élastiques (1) de l'invention est équipé : d'un substrat de support (3) ; de la couche piézoélectrique (4) qui est agencée sur le substrat de support (3), et qui contient une première couche piézoélectrique (4A) et une seconde couche piézoélectrique (4B) ; d'une électrode fonctionnelle qui est agencée sur la première couche piézoélectrique (4A) ; d'une plage à bosses (9) qui est agencée sur la première couche piézoélectrique (4A), et qui est électriquement connectée à l'électrode fonctionnelle : et d'une plage d'électrode (8) qui est agencée sur la seconde couche piézoélectrique (4B). Lorsque la première couche piézoélectrique (4A) et la seconde couche piézoélectrique (4B) sont séparées sur le substrat de support (3), et que dans une vue en plan la direction allant du centre du substrat de support (3) vers un côté bord périphérique externe constitue un côté externe, alors la seconde couche piézoélectrique (4B) est positionnée côté externe par rapport à la première couche piézoélectrique (4A).
PCT/JP2023/004756 2022-02-15 2023-02-13 Dispositif à ondes élastiques WO2023157798A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022020993 2022-02-15
JP2022-020993 2022-02-15

Publications (1)

Publication Number Publication Date
WO2023157798A1 true WO2023157798A1 (fr) 2023-08-24

Family

ID=87578182

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2023/004756 WO2023157798A1 (fr) 2022-02-15 2023-02-13 Dispositif à ondes élastiques

Country Status (1)

Country Link
WO (1) WO2023157798A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045437A (ja) * 2008-08-08 2010-02-25 Fujitsu Ltd 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器
JP2010118730A (ja) * 2008-11-11 2010-05-27 Toshiba Corp 圧電デバイス及びその製造方法
JP2014013991A (ja) * 2012-07-04 2014-01-23 Taiyo Yuden Co Ltd ラム波デバイスおよびその製造方法
JP2019021998A (ja) * 2017-07-12 2019-02-07 太陽誘電株式会社 電子部品
JP2022507325A (ja) * 2019-04-04 2022-01-18 中芯集成電路（寧波）有限公司上海分公司 バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010045437A (ja) * 2008-08-08 2010-02-25 Fujitsu Ltd 圧電薄膜共振子及びこれを用いたフィルタあるいは分波器
JP2010118730A (ja) * 2008-11-11 2010-05-27 Toshiba Corp 圧電デバイス及びその製造方法
JP2014013991A (ja) * 2012-07-04 2014-01-23 Taiyo Yuden Co Ltd ラム波デバイスおよびその製造方法
JP2019021998A (ja) * 2017-07-12 2019-02-07 太陽誘電株式会社 電子部品
JP2022507325A (ja) * 2019-04-04 2022-01-18 中芯集成電路（寧波）有限公司上海分公司 バルク音響波共振器及びその製造方法並びにフィルタ、無線周波数通信システム

Similar Documents

Publication Publication Date Title
CN210807199U (zh) 弹性波装置
WO2015098678A1 (fr) Dispositif à ondes élastiques
US10396757B2 (en) Acoustic wave device
JP6963445B2 (ja) 電子部品
JP4033205B2 (ja) 弾性表面波装置及び弾性表面波装置の製造方法
JP2019021998A (ja) 電子部品
JP2019125871A (ja) 弾性波装置
WO2017051874A1 (fr) Élément à ondes acoustiques et dispositif à ondes acoustiques
JP7199195B2 (ja) 弾性波デバイスおよび複合基板
WO2023157798A1 (fr) Dispositif à ondes élastiques
JP7426196B2 (ja) 弾性波デバイスおよびその製造方法、フィルタ及びマルチプレクサ
JP7340344B2 (ja) 弾性波デバイス、フィルタおよびマルチプレクサ
US11765978B2 (en) Acoustic wave device
WO2023153272A1 (fr) Dispositif à ondes élastiques
JP7231368B2 (ja) 弾性波デバイス
US11271542B2 (en) Acoustic wave device and method of fabricating the same
WO2023013694A1 (fr) Appareil à ondes élastiques et procédé de fabrication d'un appareil à ondes élastiques
WO2023017825A1 (fr) Dispositif à ondes élastiques, et procédé de fabrication de celui-ci
WO2023058727A1 (fr) Dispositif à ondes élastiques et son procédé de fabrication
JP7406331B2 (ja) 電子デバイス、モジュールおよびウエハ
US20240048114A1 (en) Acoustic wave device and manufacturing method for acoustic wave device
WO2022080433A1 (fr) Dispositif à ondes élastiques et son procédé de fabrication
WO2022210683A1 (fr) Dispositif à ondes élastiques et son procédé de fabrication
US20240186979A1 (en) Acoustic wave device and method of manufacturing acoustic wave device
WO2023058728A1 (fr) Dispositif à ondes élastiques et son procédé de fabrication

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 23756323

Country of ref document: EP

Kind code of ref document: A1