WO2022259442A1 - 高周波スイッチ - Google Patents

高周波スイッチ Download PDF

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Publication number
WO2022259442A1
WO2022259442A1 PCT/JP2021/022011 JP2021022011W WO2022259442A1 WO 2022259442 A1 WO2022259442 A1 WO 2022259442A1 JP 2021022011 W JP2021022011 W JP 2021022011W WO 2022259442 A1 WO2022259442 A1 WO 2022259442A1
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WO
WIPO (PCT)
Prior art keywords
switching element
input
output terminal
frequency switch
switching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/022011
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English (en)
French (fr)
Japanese (ja)
Inventor
研人 齋木
由文 河村
宏治 山中
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
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Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to PCT/JP2021/022011 priority Critical patent/WO2022259442A1/ja
Priority to JP2023526740A priority patent/JP7442740B2/ja
Publication of WO2022259442A1 publication Critical patent/WO2022259442A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors

Definitions

  • the present disclosure relates to high frequency switches.
  • a high-frequency switch is a switch that switches the path of a high-frequency signal in a device that uses a high-frequency signal.
  • high-frequency switches there is an SPDT (Single-Pole Double-Throw) switch using a switching element, as described in Non-Patent Document 1, for example, as a high-frequency switch for switching between two paths of transmission and reception in wireless communication equipment.
  • the SPDT switch of Non-Patent Document 1 uses a transistor as a switching element, and the first input/output terminal and the second input/output terminal are connected via the switching element. and an output terminal are connected via a switching element. By controlling the voltage applied to each switching element, the SPDT switch turns on one of the switching elements and turns off the other switching element, thereby switching either input or output. Switch to conduct between terminals.
  • An object of the present disclosure is to solve the above problems, and to provide a high-frequency switch that suppresses deterioration of isolation between input and output terminals whose switching elements are in the OFF state.
  • a high-frequency switch of the present disclosure is connected between a first input/output terminal, a second input/output terminal, a third input/output terminal, and between the first input/output terminal and the second input/output terminal,
  • a first switching element for switching between conduction and non-conduction between the terminal and the second input/output terminal is connected between the first input/output terminal and the third input/output terminal, and the switching element is connected between the first input/output terminal and the third input/output terminal.
  • a second switching element that switches between conduction and non-conduction with the output terminal; a third switching element that has one end connected to the second input/output terminal and is connected in parallel with the first switching element; a fourth switching element connected to the output terminal and connected in parallel with the second switching element; and an impedance having one end connected to the other end of the third switching element and the other end connected to the other end of the fourth switching element a transformer;
  • FIG. 1 is a diagram showing a circuit configuration of a high frequency switch according to Embodiment 1;
  • FIG. 2A and 2B are diagrams for explaining an example of the operation of the high-frequency switch shown in FIG. 1;
  • FIG. FIG. 10 is a diagram showing a circuit configuration of a high frequency switch according to Embodiment 2;
  • FIG. 10 is a diagram showing a circuit configuration of a high frequency switch according to Embodiment 3;
  • FIG. 11 is a diagram showing a circuit configuration of a high frequency switch according to Embodiment 4;
  • FIG. 13 is a diagram showing a circuit configuration of a high frequency switch according to Embodiment 5;
  • FIG. 1 is a diagram showing the circuit configuration of a high frequency switch 1 according to Embodiment 1.
  • a high-frequency switch 1 shown in FIG. Switching element 24 , first high resistance element 31 , second high resistance element 32 , third high resistance element 33 , fourth high resistance element 34 , first control terminal 41 , second control terminal 42 , and impedance transformer 51 , provided.
  • Each of the first switching element 21, the second switching element 22, the third switching element 23, and the fourth switching element 24 is composed of a transistor. In the following description, a field effect transistor will be described as a specific example of the transistor.
  • each switching element may be a switching element composed of various transistors other than a field effect transistor, and may be a switching element that can be realized within a range that does not hinder the technical idea of the invention described in each embodiment. Just do it.
  • the electrodes between the electrodes that are conductive in the conductive state are also referred to as "one end" and “the other end", respectively.
  • the switching elements shown in FIG. 1 are field effect transistors.
  • the switching element turns on between one end and the other end in a state in which a voltage higher than a pinch-off voltage (hereinafter also referred to as a “threshold voltage”) is applied to the gate electrode G.
  • a voltage lower than the pinch-off voltage is applied to the electrode G, it is turned off between one end and the other end.
  • the first switching element 21 is connected between the first input/output terminal 11 and the second input/output terminal 12, and switches between conduction and non-conduction between the first input/output terminal 11 and the second input/output terminal 12. .
  • the first switching element 21 shown in FIG. 1 has one end connected to the first input/output terminal 11 and the other end connected to the second input/output terminal 12. is connected to the first control terminal 41 via the .
  • the second switching element 22 is connected between the first input/output terminal 11 and the third input/output terminal 13, and switches between conduction and non-conduction between the first input/output terminal 11 and the third input/output terminal 13. .
  • the second switching element 22 shown in FIG. 1 has one end connected to the first input/output terminal 11 and the other end connected to the third input/output terminal 13. is connected to the second control terminal 42 via the .
  • the third switching element 23 is connected in parallel with the first switching element 21 .
  • the third switching element 23 shown in FIG. 1 has one end connected to the second input/output terminal 12 and the first switching element 21, and the other end connected to one end of the impedance transformer 51.
  • the gate electrode G is connected to the second control terminal 42 via the third high-resistance element 33 .
  • the fourth switching element 24 is connected in parallel with the second switching element 22 .
  • the fourth switching element 24 shown in FIG. 1 has one end connected to the third input/output terminal 13 and the second switching element 22, and the other end connected to the other end of the impedance transformer 51.
  • the gate electrode G is connected to the first control terminal 41 via the fourth high resistance element 34 .
  • An impedance transformer 51 is connected between the third switching element 23 and the fourth switching element 24 .
  • the impedance transformer 51 shown in FIG. 1 has one end connected to the other end of the third switching element 23 and the other end connected to the other end of the fourth switching element 24 .
  • Impedance transformer 51 matches the impedance of the circuit including first switching element 21 and third switching element 23 with the impedance of the circuit including second switching element 22 and fourth switching element 24 .
  • FIG. 2 is a diagram explaining an example of the operation of the high frequency switch 1 shown in FIG.
  • the state in which the first input/output terminal 11 and the third input/output terminal 13 are electrically connected is switched to the state in which the first input/output terminal 11 and the second input/output terminal 12 are electrically connected. indicates the case.
  • a control signal having a voltage V1 higher than the threshold voltages of the first switching element 21 and the fourth switching element 24 is applied from a control device (not shown) to the first control terminal 41, and the first switching element 21 and the fourth switching element 24 turn on.
  • a control signal having a voltage V2 lower than the threshold voltages of the second switching element 22 and the third switching element 23 is applied to the second control terminal 42 from a control device (not shown). 23 are turned off.
  • the terminal (the other end) of the fourth switching element 24 to which the impedance transformer 51 is connected forms a virtual short-circuit point due to the function of the impedance transformer 51 .
  • the third input/output terminal 13 connected to one end of the fourth switching element 24 is in a nearly short-circuited state. This improves the isolation of the circuit on the third input/output terminal 13 side.
  • the terminal (the other end) of the third switching element 23 to which the impedance transformer 51 is connected forms a virtual open point due to the function of the impedance transformer 51 .
  • the effect of the capacitive component of the switching element is reduced, and the passing loss of the signal passing between the first input/output terminal 11 and the second input/output terminal 12 is improved.
  • a control signal having a voltage higher than the threshold voltages of the second switching element 22 and the third switching element 23 is applied to the second control terminal 42 from a control device (not shown), and the second switching element 22 and the third switching element 23 are applied. are turned on respectively.
  • a terminal (the other end) of the third switching element 23 to which the impedance transformer 51 is connected forms a virtual short-circuit point due to the function of the impedance transformer 51 .
  • the second input/output terminal 12 connected to one end of the third switching element 23 is in a nearly short-circuited state. This improves the isolation of the circuit on the second input/output terminal 12 side.
  • the terminal (the other end) of the fourth switching element 24 to which the impedance transformer 51 is connected forms a virtual open point due to the function of the impedance transformer 51 .
  • the influence of the capacitive component of the switching element is reduced, and the passing loss of the signal passing between the first input/output terminal 11 and the third input/output terminal 13 is improved.
  • the effect of the high-frequency switch according to the present disclosure works more effectively as the impedance of the circuit or element connected to each input/output terminal becomes lower.
  • the high-frequency switch of the present disclosure can improve the isolation on the side of the circuit that has been switched to the off state by the configuration as described above. Moreover, the high-frequency switch can improve the passage loss of the signal passing through the circuit side switched to the ON state by the configuration as described above.
  • the SPDT switch of Non-Patent Document 1 another switching element is connected in parallel with the switching element connected to the second input/output terminal. Further switching elements are connected in parallel. However, each of these switching elements has its source electrode grounded. In this case, since each input/output terminal is affected by the capacitive component of the switching element, the isolation on the side of the circuit switched to the off state deteriorates, and the side of the circuit switched to the on state Passage loss of the signal passing through becomes worse. As the isolation deteriorates, the SPDT switch of Non-Patent Document 1, for example, allows the signal passing between the first input/output terminal and the second input/output terminal in the ON state to be the third input/output terminal. There is a problem that it leaks to the terminal. In contrast, the high-frequency switch according to the present disclosure can suppress the occurrence of such problems by adopting the above configuration.
  • the high-frequency switch in the present disclosure is connected between a first input/output terminal, a second input/output terminal, a third input/output terminal, and between the first input/output terminal and the second input/output terminal,
  • a first switching element for switching between conduction and non-conduction between the terminal and the second input/output terminal is connected between the first input/output terminal and the third input/output terminal, and the switching element is connected between the first input/output terminal and the third input/output terminal.
  • a second switching element that switches between conduction and non-conduction with the output terminal; a third switching element that has one end connected to the second input/output terminal and is connected in parallel with the first switching element; a fourth switching element connected between the output terminal and connected in parallel with the second switching element, one end of which is connected to the other end of the third switching element, and the other end of which is connected to the other end of the fourth switching element; and an impedance transformer.
  • FIG. 3 is a diagram showing the circuit configuration of the high frequency switch 2 according to the second embodiment.
  • the same reference numerals as in FIG. 1 denote the same circuit configurations as in FIG. 1, and detailed description thereof will be omitted.
  • the impedance transformer 51 is configured using a ⁇ /4 line (1/4 wavelength line) 52 .
  • ⁇ indicates the wavelength of the input/output signal passing between the input/output terminals.
  • the ⁇ /4 line 52 has an electrical length that is an integral multiple of 1/4 the wavelength of the signal input and output from the first input/output terminal, the second input/output terminal, or the third input/output terminal. It is a transmission line with
  • the impedance transformer 51 may be configured to absorb the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 in addition to the ⁇ /4 line 52 .
  • the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 is obtained in advance, and the impedance transformer 51 shortens or extends the electrical length of the ⁇ /4 line 52 according to the parasitic component. configuration.
  • the impedance transformer 51 can absorb the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 .
  • the high-frequency switch 2 having this impedance transformer 51 can improve the isolation of the circuit switched to the off state while suppressing deterioration of electrical characteristics caused by parasitic components. In addition, it is possible to improve the passage loss of the signal passing through the circuit side switched to the ON state.
  • the impedance transformer further converts the signal input and output from the first input/output terminal, the second input/output terminal, or the third input/output terminal It is composed of a transmission line having an electrical length that is an integer multiple of 1/4 the wavelength.
  • the impedance transformer is further configured to absorb the parasitic component of the third switching element or the parasitic capacitance of the fourth switching element. As a result, it is possible to provide a high-frequency switch that suppresses deterioration of electrical characteristics caused by parasitic components.
  • FIG. 4 is a diagram showing the circuit configuration of the high frequency switch 3 according to the third embodiment.
  • the high-frequency switch 3 shown in FIG. 4 is configured by using an impedance transformation circuit 53 instead of the impedance transformer 51 of the high-frequency switch 1 shown in FIG.
  • the impedance transformation circuit 53 shown in FIG. 4 is a circuit configured by combining inductors and capacitors.
  • the impedance transformation circuit 53 is a transmission line having an electrical length that is an integral multiple of 1/4 the wavelength of the signal input or output from the first input/output terminal, the second input/output terminal, or the third input/output terminal. is a circuit having a pass phase equal to that of .
  • the impedance transformation circuit 53 shown in FIG. 4 has an inductor and two capacitors. One end of the inductor is connected to the other end of the third switching element 23 and the other end of the inductor is connected to the other end of the fourth switching element 24 . One of the two capacitors has one end connected between the other end of the third switching element 23 and the inductor, and the other end grounded. The other of the two capacitors has one end connected between the other end of the fourth switching element 24 and the inductor, and the other end grounded.
  • the impedance transformer may be configured to absorb the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 in addition to the impedance transforming circuit 53 described above.
  • the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 is obtained in advance, and the impedance transformation circuit 53 is used to convert the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 into Configure to absorb.
  • the impedance transformation circuit 53 can absorb the parasitic component of the third switching element 23 or the parasitic component of the fourth switching element 24 .
  • the impedance transformation circuit 53 shown in FIG. 4 is an example, and the impedance transforming circuit 53 is a quarter of the wavelength of the signal input or output from the first input/output terminal, the second input/output terminal, or the third input/output terminal. Any configuration combining inductors, capacitors, or transmission lines can be considered as long as the circuit has a passing phase equal to that of a transmission line having an electrical length that is an integral multiple of .
  • the high-frequency switch 3 having the impedance transforming circuit 53 can be configured without using transmission lines such as the ⁇ /4 line 52, so that especially low-frequency band signals can be processed. It is possible to prevent an increase in circuit size in the high-frequency switch for input/output.
  • the impedance transformer further has a wavelength of a signal input or output from the first input/output terminal, the second input/output terminal, or the third input/output terminal
  • it is configured to use a circuit configured by combining inductors and capacitors, which has the same pass phase as the pass phase of a transmission line having an electrical length that is an integral multiple of 1/4.
  • the impedance transformer is further configured to absorb the parasitic component of the third switching element and the parasitic component of the fourth switching element. As a result, it is possible to provide a high-frequency switch that suppresses deterioration of electrical characteristics caused by parasitic components.
  • Embodiment 4 describes a mode for stabilizing the operation of the switching element in the high frequency switch.
  • FIG. 5 is a diagram showing the circuit configuration of the high frequency switch 4 according to the fourth embodiment.
  • the high frequency switch 4 shown in FIG. 5 includes a first DC bias high resistance element 61 and a second DC bias high resistance element 62 .
  • the first DC bias high-resistance element 61 and the second DC bias high-resistance element 62 are elements that have high impedance with respect to input/output signals.
  • the first DC bias high resistance element 61 is connected in parallel with the third switching element 23 . Specifically, one end of the first DC bias high resistance element 61 shown in FIG. ing.
  • the second DC bias high resistance element 62 is connected in parallel with the fourth switching element 24 .
  • the second DC bias high resistance element 62 shown in FIG. 5 has one end connected to one end of the fourth switching element 24 and the other end connected to the other end of the fourth switching element 24. ing.
  • the high-frequency switch 4 shown in FIG. becomes electric potential.
  • the high-frequency switch 4 can ensure that the switching element performs the switching operation, and stabilizes the operation of the switching element.
  • FIG. 5 shows a high frequency switch 4 obtained by adding a first DC bias high resistance element 61 and a second DC bias high resistance element 62 to the high frequency switch 1 of FIG.
  • the high-frequency switch 3 shown in FIG. 3 or the high-frequency switch 3 shown in FIG. may be provided in the same manner as described above.
  • the impedance transformer in the high-frequency switch 4 in FIG. 5 may be configured with an element that allows direct current to pass.
  • either the first DC bias high resistance element 61 or the second DC bias high resistance element 62 can be omitted.
  • Any one or more input/output terminals from the first input/output terminal 11 to the third input/output terminal 13 may be applied with an arbitrary DC voltage or grounded in a DC manner. Thereby, in the high frequency switch 4, the voltage applied to the first control terminal 41 and the second control terminal 42 can be arbitrarily determined.
  • the first DC bias high voltage switch has one end connected to one end of the third switching element and the other end connected to the other end of the third switching element. and a second DC bias high resistance element having one end connected to one end of the fourth switching element and the other end connected to the other end of the fourth switching element.
  • Embodiment 5 describes a mode for stabilizing the operation of the switching element in the high frequency switch.
  • FIG. 6 is a diagram showing the circuit configuration of the high frequency switch 5 according to the fifth embodiment. In the description of FIG. 6, the same reference numerals as in FIG. 1 denote the same circuit configurations as in FIG. 1, and detailed description thereof will be omitted.
  • the high frequency switch 5 shown in FIG. 6 further includes a third DC bias high resistance element 71 and a DC bias terminal 72 .
  • the third DC bias high resistance element 71 is an element that becomes high impedance with respect to input/output signals.
  • the third DC bias high resistance element 71 shown in FIG. 6 has one end connected to the impedance transformer and the other end connected to the DC bias terminal 72 .
  • the third DC bias high resistance element 71 may be connected to a position where a DC voltage can be applied to the other end of the third switching element 23 and the other end of the fourth switching element 24. It may be connected at any position between the other end of the switching element 23 and the other end of the fourth switching element 24 .
  • the high-frequency switch of the present disclosure further includes a third DC bias high-resistance element connected between the other end of the third switching element and the other end of the fourth switching element. configured to be ready. As a result, it is possible to further provide a high-frequency switch in which the operation of the switching element is stable.
  • a high-frequency switch according to the present disclosure is a device that needs to switch the path of a high-frequency signal, and is suitable for use in wireless communication devices, for example.

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  • Electronic Switches (AREA)
  • Waveguide Switches, Polarizers, And Phase Shifters (AREA)
PCT/JP2021/022011 2021-06-10 2021-06-10 高周波スイッチ Ceased WO2022259442A1 (ja)

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PCT/JP2021/022011 WO2022259442A1 (ja) 2021-06-10 2021-06-10 高周波スイッチ
JP2023526740A JP7442740B2 (ja) 2021-06-10 2021-06-10 高周波スイッチ

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05199094A (ja) * 1992-01-21 1993-08-06 Sharp Corp 高周波スイッチ回路
JP2002271103A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 高周波用スイッチ回路

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08321738A (ja) * 1995-05-24 1996-12-03 Matsushita Electric Ind Co Ltd 二周波数帯域通過フィルタ及び二周波数分波器及び二周波数合成器

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05199094A (ja) * 1992-01-21 1993-08-06 Sharp Corp 高周波スイッチ回路
JP2002271103A (ja) * 2001-03-07 2002-09-20 Toshiba Corp 高周波用スイッチ回路

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JP7442740B2 (ja) 2024-03-04

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