WO2022239696A1 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
WO2022239696A1
WO2022239696A1 PCT/JP2022/019513 JP2022019513W WO2022239696A1 WO 2022239696 A1 WO2022239696 A1 WO 2022239696A1 JP 2022019513 W JP2022019513 W JP 2022019513W WO 2022239696 A1 WO2022239696 A1 WO 2022239696A1
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WO
WIPO (PCT)
Prior art keywords
electrode
semiconductor device
thickness direction
joint
bonding layer
Prior art date
Application number
PCT/JP2022/019513
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
沢水 神田
Original Assignee
ローム株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ローム株式会社 filed Critical ローム株式会社
Priority to DE112022002169.1T priority Critical patent/DE112022002169T5/de
Priority to JP2023520990A priority patent/JPWO2022239696A1/ja
Priority to CN202280033824.1A priority patent/CN117280452A/zh
Publication of WO2022239696A1 publication Critical patent/WO2022239696A1/ja
Priority to US18/469,351 priority patent/US20240006368A1/en

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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Definitions

  • the present disclosure relates to semiconductor devices.
  • FIG. 34 is a cross-sectional view taken along line XXXIV-XXXIV of FIG. 33.
  • FIG. 35 is a cross-sectional view taken along line XXXV-XXXV of FIG. 33.
  • FIG. FIG. 36 is a partially enlarged plan view of a modification of the semiconductor device shown in FIG. 33, which is transparent through the sealing resin.
  • FIG. 37 is a partially enlarged plan view of the semiconductor device according to the seventh embodiment of the present disclosure, enlarging the first element and its surroundings and seeing through the sealing resin. 38 is a cross-sectional view taken along line XXXVIII-XXXVIII of FIG. 37.
  • the support member 10 is composed of the same lead frame together with the plurality of terminal leads 13 .
  • the lead frame is copper (Cu) or a copper alloy.
  • the composition of the support member 10 and the plurality of terminal leads 13 includes copper (ie, these members contain copper).
  • the support member 10 has electrical conductivity.
  • the support member 10 includes a first die pad 10A and a second die pad 10B spaced apart from each other in the first direction x, as shown in FIGS.
  • Support member 10 has a main surface 101 and a back surface 102 .
  • the main surface 101 faces the thickness direction z.
  • Main surface 101 is covered with sealing resin 50 .
  • a semiconductor element 21 is mounted on the main surface 101 . Therefore, the back surface 102 faces the side opposite to the side where the semiconductor element 21 is located in the thickness direction z.
  • the rear surface 102 is exposed from the sealing resin 50 .
  • Back surface 102 is plated with tin (Sn), for example.
  • the sealing resin 50 is applied to the semiconductor element 21, the conductive member 30, and a portion of the support member 10 (a portion of each of the first die pad 10A and the second die pad 10B). ) and Furthermore, the sealing resin 50 partially covers each of the plurality of terminal leads 13 .
  • the sealing resin 50 has electrical insulation.
  • Sealing resin 50 is made of a material containing, for example, black epoxy resin.
  • the dimension L1 of the sealing resin 50 in the first direction x is longer than the dimension L2 of the sealing resin 50 in the second direction y.
  • the sealing resin 50 has a top surface 51 , a bottom surface 52 , a pair of first side surfaces 53 , a second side surface 54 , a third side surface 55 , a plurality of recesses 56 and grooves 57 .
  • the plurality of terminal leads 13 are positioned on one side of the support member 10 in the second direction y, as shown in FIG. A plurality of terminal leads 13 are electrically connected to the semiconductor element 21 . A plurality of terminal leads 13 are arranged along the first direction x.
  • the plurality of terminal leads 13 includes a first input terminal 14 , an output terminal 15 , a second input terminal 16 , a first gate terminal 171 , a second gate terminal 172 , a first sense terminal 181 and a second sense terminal 182 .
  • the output terminal 15 includes a portion extending along the second direction y and is connected to the second die pad 10B. Therefore, the output terminal 15 is electrically connected to the second electrode 212 of the second element 21B through the second die pad 10B.
  • the AC power converted by the semiconductor element 21 is output from the output terminal 15 .
  • the output terminal 15 has a covered portion 15A and an exposed portion 15B.
  • the covering portion 15A is connected to the second die pad 10B and covered with the sealing resin 50. As shown in FIG. When viewed in the first direction x, the covering portion 15A is bent in the same manner as the covering portion 14A of the first input terminal 14 . As shown in FIGS.
  • the conduction member 30 forms a conduction path in the semiconductor device A10 together with the support member 10 and the plurality of terminal leads 13.
  • the composition of the conducting member 30 contains copper.
  • Conductive member 30 is a metal clip.
  • conductive member 30 includes a first conductive member 31 and a second conductive member 32, as shown in FIGS.
  • the second joint portion 313 is joined to the first bearing surface 103 of the second die pad 10B.
  • the second joint portion 313 extends in the second direction y. At least part of the second joint portion 313 is housed in a region defined by the first seat surface 103 and the first standing surface 104 of the second die pad 10B.
  • the second joint portion 313 is connected to the body portion 311 .
  • the second joint portion 313 is located on the opposite side of the first joint portion 312 with the body portion 311 interposed therebetween.
  • the fourth joint portion 323 is joined to the second seating surface 16C of the second input terminal 16. As shown in FIG. The fourth joint portion 323 extends in the first direction x. At least part of the fourth joint portion 323 is accommodated in a region defined by the second seat surface 16C and the second upright surface 16D of the second input terminal 16. As shown in FIG. The fourth joint portion 323 is connected to the body portion 321 . The fourth joint portion 323 is located on the side opposite to the third joint portion 322 with the body portion 321 interposed therebetween.
  • the semiconductor device A10 further includes a third bonding layer 35, as shown in FIGS. In FIG. 14, the third bonding layer 35 is indicated by a plurality of points.
  • the third bonding layer 35 is interposed between the first electrode 211 of the second element 21B and the third bonding portion 322 .
  • the third bonding layer 35 bonds the first electrode 211 of the second element 21B and the third bonding portion 322 .
  • the third bonding layer 35 has conductivity.
  • the third bonding layer 35 is solder.
  • the thickness t of the third bonding portion 322 is 0.1 mm or more and twice the maximum thickness T max of the third bonding layer 35 or less.
  • the maximum thickness T max of the third bonding layer 35 is greater than the thickness of the second element 21B.
  • the semiconductor device A10 further includes a fourth bonding layer 36, as shown in FIGS.
  • the fourth bonding layer 36 is interposed between the second seating surface 16 ⁇ /b>C of the second input terminal 16 and the fourth bonding portion 323 .
  • the fourth joint layer 36 joins the covering portion 16A of the second input terminal 16 and the fourth joint portion 323 .
  • the fourth bonding layer 36 has conductivity.
  • the fourth bonding layer 36 is solder.
  • the first restrictor 37A faces the first bonding layer 33 in the first direction x.
  • the first restricting body 37A is in contact with the first bonding layer 33 and the end surface 312B of the first bonding portion 312 of the first conduction member 31 .
  • the first restricting body 37A includes a first portion 371 and a second portion 372 that are separated from each other in the second direction y. A portion of the first bonding layer 33 is located between the first portion 371 and the second portion 372 .
  • the second restrictor 37B faces the third bonding layer 35 in the first direction x.
  • the second restrictor 37B is in contact with the third bonding layer 35 and the end surface 322B of the third bonding portion 322 of the second conduction member 32 .
  • the second restrictor 37B includes a first portion 371 and a second portion 372 that are separated from each other in the second direction y. A portion of the third bonding layer 35 is located between the first portion 371 and the second portion 372 .
  • the pair of detection wires 42 includes the second electrodes 212 of the first element 21A and the second element 21B, the covering portion 181A of the first detecting terminal 181, and the covering portion 182A of the second detecting terminal 182. and are joined separately.
  • the first detection terminal 181 is electrically connected to the second electrode 212 of the first element 21A.
  • the second detection terminal 182 is electrically connected to the second electrode 212 of the second element 21B.
  • the composition of the pair of sensing wires 42 includes gold.
  • the composition of the pair of detection wires 42 may contain copper or aluminum.
  • the semiconductor device A10 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conduction member 30 (first conduction member 31) having a first joint portion 312 facing the semiconductor element 21, and a first electrode 211. 211 and a bonding layer (first bonding layer 33 ) interposed between the first bonding portion 312 .
  • the semiconductor device A10 further includes a regulating body 37 (first regulating body 37A) joined to the first electrode 211 .
  • the regulator 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z.
  • the first joint portion 312 of the conducting member 30 has an end face 312B facing the first direction x.
  • the end surface 312B is in contact with the restrictor 37.
  • the first bonding portion 312 is bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33 , the first bonding portion 312 is positioned in the first direction x to the gate electrode 213 of the semiconductor element 21 .
  • the end face 312B comes into contact with the regulating body 37. Therefore, the end face 312B serves as means for bringing the first joint portion 312 into contact with the restricting body 37 more reliably.
  • the regulating body 37 includes a first portion 371 and a second portion 372 positioned apart from each other in the second direction y. As a result, it is possible to reduce the volume of the regulation body 37 while suppressing the displacement of the conductive member 30 with respect to the first electrode 211 of the semiconductor element 21 . Furthermore, the regulator 37 contains a metal element. The metal element is aluminum. As a result, the regulating body 37 becomes a conductive path between the first electrode 211 of the semiconductor element 21 and the first joint portion 312 of the conductive member 30 . In addition, the liquid repellency of the melted first bonding layer 33 with respect to the regulator 37 is improved. Therefore, the regulating body 37 can more effectively block the melted first bonding layer 33 .
  • the sealing resin 50 has a plurality of recesses 56 recessed from the third side surface 55 in the second direction y. With this configuration, any two terminal leads 13 among the plurality of terminal leads 13 (excluding the first gate terminal 171 and the first detection terminal 181 and the second gate terminal 172 and the second detection terminal 182). A longer creepage distance of the sealing resin 50 between is ensured. Thereby, the withstand voltage of the semiconductor device A10 can be improved.
  • the sealing resin 50 has a groove portion 57 recessed from the bottom surface 52 and dividing the rear surface 102 of the first die pad 10A and the rear surface 102 of the second die pad 10B when viewed in the thickness direction z.
  • This configuration ensures a longer creeping distance of the sealing resin 50 between the first die pad 10A and the second die pad 10B. This makes it possible to further improve the withstand voltage of the semiconductor device A10.
  • thermal strain in the first direction x of the sealing resin 50 can be dispersed. As a result, concentration of thermal strain on the pair of first side surfaces 53 of the sealing resin 50 can be alleviated.
  • FIGS. 16 and 18 are transparent through the sealing resin 50 for convenience of understanding.
  • the position in FIG. 16 is the same as the position in FIG. 12 of the semiconductor device A10.
  • the position in FIG. 18 is the same as the position in FIG. 14 of the semiconductor device A10.
  • the semiconductor device A20 differs from the semiconductor device A10 in the configuration of the regulator 37.
  • the first restricting body 37A is joined to the joint surface 312A of the first joint portion 312 of the first conducting member 31. As shown in FIGS. The first restrictor 37A is in contact with the first electrode 211 of the first element 21A. Therefore, like the first bonding layer 33, the first restricting body 37A is interposed between the first electrode 211 of the first element 21A and the bonding surface 312A. In the semiconductor device A20, the first restricting body 37A is formed by bonding a metal block to the bonding surface 312A by wire bonding.
  • FIG. 20 is transparent through the sealing resin 50 for convenience of understanding.
  • the position of FIG. 20 is the same as the position of FIG.
  • the configuration of this modification includes not only the relationship between the first electrode 211 of the first element 21A and the first conductive member 31 shown below, but also the relationship between the first electrode 211 of the second element 21B shown in FIGS. , the relationship with the second conductive member 32 .
  • the first electrode 211 of the first element 21A has an extension 211B.
  • the extended portion 211B is located on the side opposite to the first joint portion 312 with the tip portion 314 interposed therebetween.
  • the first bonding layers 33 are positioned on both sides of the first restrictor 37A in the first direction x.
  • the first bonding layer 33 is in contact with the extended portion 211B of the first electrode 211 of the first element 21A and the distal end portion 314 of the first conductive member 31 .
  • the second restricting body 37B is also sandwiched between the first electrode 211 of the second element 21B and the joint surface 322A of the third joint portion 322 of the second conductive member 32. As shown in FIG. With this configuration, the maximum thickness T max of the third bonding layer 35 can be made equal (or substantially equal) to the thickness of the second restrictor 37B. Therefore, it becomes easy to manage the maximum thickness T max of the third bonding layer 35 .
  • the conduction member 30 of the semiconductor device A21 has a tip portion 314 connected to the first joint portion 312 .
  • the distal end portion 314 is formed on the joint surface of the first joint portion 312 in a direction away from the first electrode 211 of the semiconductor element 21 in the thickness direction z as it becomes farther from the first joint portion 312 in the direction orthogonal to the thickness direction z. It is tilted with respect to 312A.
  • the first electrode 211 when viewed in the thickness direction z, has an extended portion 211B located on the opposite side of the first joint portion 312 with the tip portion 314 interposed therebetween.
  • the first bonding layer 33 is in contact with the extended portion 211B, and the first bonding layer 33 crawls up along the tip portion 314 . Thereby, a fillet having a relatively large volume is formed in the first bonding layer 33 . Therefore, it is possible to improve the bonding strength of the conductive member 30 to the first electrode 211 and allow a larger current to flow through the conductive member 30 .
  • the inclination angle ⁇ of the tip portion 314 with respect to the joint surface 312A is preferably 30° or more and 60° or less. When the inclination angle ⁇ is set within this range, the formation of the fillet of the first bonding layer 33 is promoted and the concentration of thermal stress at the interface between the extension portion 211B and the first bonding layer 33 is reduced.
  • the regulator 37 contains a metal element.
  • the metal element is aluminum.
  • the regulating body 37 becomes a conductive path between the first electrode 211 of the semiconductor element 21 and the first joint portion 312 of the conductive member 30 .
  • the liquid repellency of the melted first bonding layer 33 with respect to the regulator 37 is improved.
  • the reaction force that the regulation body 37 receives from the first bonding layer 33 is increased. Therefore, the effect of restraining the displacement of the conducting member 30 by the restricting body 37 is improved.
  • the first joint portion 312 of the first conduction member 31 includes two regions that are separated from each other in the second direction y. As shown in FIG. 25, one of the two regions is bonded to the top electrode 221 of the first diode 22A via the first bonding layer 33. As shown in FIG. Thereby, the upper surface electrode 221 of the first diode 22A is electrically connected to the first electrode 211 of the first element 21A through the first conduction member 31. As shown in FIG.
  • the regulator 37 of the semiconductor device A40 includes a third regulator 37C joined to the upper electrode 221 of the first diode 22A and a fourth regulator 37D joined to the upper electrode 221 of the second diode 22B.
  • the semiconductor device A50 differs from the semiconductor device A10 in the configuration of the conductive member 30.
  • the convex portion 38 protrudes in the thickness direction z from the joint surface 312A of the third joint portion 322 toward the first electrode 211 of the second element 21B.
  • the convex portion 38 is in contact with the first electrode 211 of the second element 21B and the third bonding layer 35 .
  • the dimension d of the convex portion 38 in the thickness direction z is smaller than the dimension h of the second restricting body 37B in the thickness direction z.
  • the projection 38 has a circular shape when viewed in the thickness direction z.
  • the projection 38 may have a polygonal shape such as a square shape when viewed in the thickness direction z.
  • the convex portion 38 of the first conduction member 31 includes a first convex portion 381 and a second convex portion 382 that are positioned apart from each other in the first direction x.
  • the shape and size of the first protrusion 381 and the second protrusion 382 are equal to each other.
  • FIG. 32 is transparent through the sealing resin 50 for convenience of understanding.
  • the position of FIG. 32 is the same as the position of FIG.
  • the configuration of this modification can be applied not only to the first conduction member 31 described below, but also to the second conduction member 32 shown in FIGS.
  • the convex portion 38 of the first conduction member 31 includes a first convex portion 381 and a second convex portion 382 that are positioned apart from each other in the second direction y.
  • the first protrusion 381 and the second protrusion 382 extend in the first direction x. That is, the first protrusion 381 and the second protrusion 382 extend in a direction orthogonal to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 separate from each other.
  • the dimension a in the first direction x is larger than the dimension b in the second direction y.
  • the first protrusion 381 and the second protrusion 382 of the protrusion 38 are orthogonal to the thickness direction z and the direction in which the first protrusion 381 and the second protrusion 382 are separated from each other. extending in the direction
  • the first bonding portion 312 of the conductive member 30 is bonded to the first electrode 211 of the semiconductor element 21 via the first bonding layer 33, the first bonding portion 312 moves in the first direction x and in the first direction. Rotational displacement around each of the two directions y can be suppressed.
  • FIG. 33 is transparent through the sealing resin 50 for convenience of understanding.
  • the position in FIG. 33 is the same as the position in FIG. 27 of the semiconductor device A50.
  • the configuration of the present embodiment includes not only the relationship between the first electrode 211 of the first element 21A and the first conductive member 31 described below, but also the relationship between the first electrode 211 of the second element 21B and the relationship shown in FIGS. , the relationship with the second conductive member 32 .
  • the first electrode 211 of the first element 21A includes two regions separated from each other in the first direction x.
  • the first conducting member 31 has two first joints 312 spaced apart from each other in the first direction x.
  • One side of the two first joint portions 312 in the second direction y is connected to the body portion 311 of the first conduction member 31 .
  • the convex portion 38 protrudes in the thickness direction z from the joint surfaces 312A of the two first joint portions 312 toward the first electrode 211 of the first element 21A.
  • the convex portion 38 is in contact with the first electrode 211 of the first element 21A and the first bonding layer 33 .
  • the convex portion 38 includes a first convex portion 381 and a second convex portion 382 spaced apart from each other in the first direction x.
  • the first convex portion 381 is provided on one first joint portion 312 of the two first joint portions 312 .
  • the second convex portion 382 is provided on the other first joint portion 312 of the two first joint portions 312 . As shown in FIG.
  • the semiconductor device A60 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conduction member 30 (first conduction member 31) having a first joint portion 312 facing the semiconductor element 21, and a first electrode 211. 211 and a bonding layer (first bonding layer 33 ) interposed between the first bonding portion 312 .
  • the semiconductor device A50 further includes a regulating body 37 (first regulating body 37A) joined to the first electrode 211 .
  • the regulator 37 faces the first bonding layer 33 in a direction perpendicular to the thickness direction z.
  • the semiconductor device A60 can also suppress the displacement of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21.
  • FIG. since the semiconductor device A60 has the same configuration as the semiconductor device A10, the semiconductor device A60 also exhibits the effects of the configuration.
  • the conducting member 30 of the semiconductor device A60 has the projections 38 provided on the two first joints 312 .
  • the convex portion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21 .
  • the protrusion 38 is in contact with the first electrode 211 . Therefore, since the semiconductor device A60 can also control the maximum thickness T max of the first bonding layer 33 shown in FIG. 34, it is possible to improve the durability of the semiconductor device A60 against temperature cycles and power cycles. . Furthermore, the generation of voids in the first bonding layer 33 can be suppressed.
  • FIG. 37 is transparent through the sealing resin 50 for convenience of understanding.
  • the position in FIG. 37 is the same as the position in FIG. 16 of the semiconductor device A20.
  • the configuration of this embodiment is not limited to the relationship between the first conducting member 31 and the first restricting body 37A described below, but also the relationship between the second conducting member 32 and the second restricting body 37B shown in FIGS. can also be applied.
  • the semiconductor device A70 differs from the semiconductor device A20 in the configuration of the conductive member 30 and the restrictor 37.
  • the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first joint portion 312 toward the first electrode 211 of the first element 21A.
  • the upper surface 312D faces the side opposite to the joint surface 312A of the first joint portion 312 in the thickness direction z and is connected to the end surface 312B of the first joint portion 312 .
  • the shape of the recessed portion 39 approximates the shape of the convex portion 38 when viewed in the thickness direction z.
  • the recessed portion 39 overlaps the convex portion 38 when viewed in the thickness direction z. In this case, the dimension d in the thickness direction z of the convex portion 38 is equal to or less than the thickness t of the first joint portion 312 .
  • the conducting member 30 of the semiconductor device A70 has a convex portion 38 provided on the first joint portion 312 .
  • the convex portion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21 .
  • the protrusion 38 is in contact with the first electrode 211 . Therefore, since the semiconductor device A70 can also control the maximum thickness T max of the first bonding layer 33 shown in FIG. 38, it is possible to improve the durability of the semiconductor device A70 against temperature cycles and power cycles. . Furthermore, the generation of voids in the first bonding layer 33 can be suppressed.
  • the dimension d in the thickness direction z of the protrusion 38 shown in FIG. 38 is larger than the dimension h in the thickness direction z of the restricting body 37.
  • FIGS. A semiconductor device A80 according to the eighth embodiment of the present disclosure will be described as shown in FIGS.
  • elements identical or similar to those of the semiconductor device A10 described above are denoted by the same reference numerals, and overlapping descriptions are omitted.
  • FIG. 39 is transparent through the sealing resin 50 for convenience of understanding.
  • the position in FIG. 39 is the same as the position in FIG. 22 of the semiconductor device A30.
  • the configuration of this embodiment can be applied not only to the first conducting member 31 described below, but also to the second conducting member 32 shown in FIG.
  • the semiconductor device A80 differs from the semiconductor device A30 in the configuration of the conducting member 30.
  • the first conducting member 31 has a convex portion 38 and an indented portion 39. As shown in FIG. The convex portion 38 and the recessed portion 39 are provided at the first joint portion 312 of the first conducting member 31 . The convex portion 38 and the recessed portion 39 can be formed by pressing the first joint portion 312 .
  • the recessed portion 39 is recessed in the thickness direction z from the upper surface 312D of the first joint portion 312 toward the first electrode 211 of the first element 21A.
  • the upper surface 312D faces the side opposite to the joint surface 312A of the first joint portion 312 in the thickness direction z and is connected to the end surface 312B of the first joint portion 312 .
  • the shape of the recessed portion 39 approximates the shape of the convex portion 38 when viewed in the thickness direction z.
  • the recessed portion 39 overlaps the convex portion 38 when viewed in the thickness direction z. In this case, the dimension d in the thickness direction z of the convex portion 38 is equal to or less than the thickness t of the first joint portion 312 .
  • the semiconductor device A80 includes a semiconductor element 21 (first element 21A) having a first electrode 211, a conduction member 30 (first conduction member 31) having a first joint portion 312 facing the semiconductor element 21, and a first electrode 211. 211 and a bonding layer (first bonding layer 33 ) interposed between the first bonding portion 312 .
  • the first electrode 211 has a first recess 211A recessed in a direction orthogonal to the thickness direction z.
  • the first joint portion 312 has a second concave portion 312C that is concave in a direction orthogonal to the thickness direction z. When viewed in the thickness direction z, the second recess 312C overlaps the first recess 211A.
  • the semiconductor device A80 can also allow the positional deviation of the conductive member 30 with respect to the electrode (first electrode 211) of the semiconductor element 21.
  • FIG. since the semiconductor device A80 has the same configuration as the semiconductor device A10, the semiconductor device A80 also exhibits the effects of the configuration.
  • the conductive member 30 of the semiconductor device A80 has a convex portion 38 provided on the first joint portion 312 .
  • the convex portion 38 protrudes in the thickness direction z toward the first electrode 211 of the semiconductor element 21 .
  • the protrusion 38 is in contact with the first electrode 211 . Therefore, since the semiconductor device A80 can also control the maximum thickness T max of the first bonding layer 33 shown in FIG. 40, it is possible to improve the durability of the semiconductor device A80 against temperature cycles and power cycles. . Furthermore, the generation of voids in the first bonding layer 33 can be suppressed.
  • the conductive member has a tip portion connected to the first joint portion, The tip portion is inclined with respect to the joint surface in a direction away from the first electrode in the thickness direction as the distance from the first joint portion increases in a direction orthogonal to the thickness direction, 8.
  • Appendix 9. The semiconductor device according to any one of appendices 1 to 8, wherein the regulator is in contact with the bonding layer.
  • the semiconductor element has a gate electrode positioned on the same side as the first electrode in the thickness direction, 10.
  • a semiconductor element having a first electrode; a conductive member having a first joint facing the first electrode; a bonding layer interposed between the first electrode and the first bonding portion; the first electrode has a first recess recessed in a direction perpendicular to the thickness direction of the semiconductor element, The first joint has a second recess recessed in a direction orthogonal to the thickness direction, The semiconductor device, wherein the second recess overlaps the first recess when viewed in the thickness direction.
  • the semiconductor element has a gate electrode positioned on the same side as the first electrode in the thickness direction, 12.
  • Appendix 13. further comprising a support member located on the opposite side of the semiconductor element from the first joint portion in the thickness direction; 13.
  • Appendix 14. 14 The semiconductor device according to appendix 13, further comprising a sealing resin that covers the semiconductor element, the conduction member, and part of the support member.
  • Appendix 15. further comprising a plurality of terminal leads electrically connected to the semiconductor element; 15.
  • the semiconductor device according to appendix 14 wherein a part of each of the plurality of terminal leads is covered with the sealing resin.
  • Appendix 16. The support member has conductivity, The semiconductor element has a second electrode facing the support member, The second electrode is joined to the support member, 16.
  • the semiconductor device according to appendix 15, wherein one of the plurality of terminal leads is connected to the support member.
  • Appendix 17. The conducting member has a main body portion to which the first joint portion is connected, and a second joint portion connected to the main body portion and positioned apart from the first joint portion, 17.
  • the conducting member has a convex portion provided at the first joint portion and protruding in the thickness direction toward the first electrode; 18.
  • Appendix 19 The conductive member has a recessed portion provided in the first joint portion and recessed in the thickness direction toward the first electrode, 19.
  • the convex portion includes a first convex portion and a second convex portion positioned apart from each other in a direction perpendicular to the thickness direction, The first convex portion and the second convex portion extend in a direction orthogonal to the thickness direction and the direction in which the first convex portion and the second convex portion separate from each other. 21.

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CN202280033824.1A CN117280452A (zh) 2021-05-14 2022-05-02 半导体装置
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Citations (5)

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Publication number Priority date Publication date Assignee Title
JP2011249395A (ja) * 2010-05-24 2011-12-08 Mitsubishi Electric Corp 半導体装置
WO2012169044A1 (ja) * 2011-06-09 2012-12-13 三菱電機株式会社 半導体装置
JP2017050441A (ja) * 2015-09-03 2017-03-09 ローム株式会社 半導体装置
JP2017054877A (ja) * 2015-09-08 2017-03-16 株式会社村田製作所 半導体モジュール
WO2019171795A1 (ja) * 2018-03-08 2019-09-12 住友電気工業株式会社 半導体モジュール

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* Cited by examiner, † Cited by third party
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JP2011249395A (ja) * 2010-05-24 2011-12-08 Mitsubishi Electric Corp 半導体装置
WO2012169044A1 (ja) * 2011-06-09 2012-12-13 三菱電機株式会社 半導体装置
JP2017050441A (ja) * 2015-09-03 2017-03-09 ローム株式会社 半導体装置
JP2017054877A (ja) * 2015-09-08 2017-03-16 株式会社村田製作所 半導体モジュール
WO2019171795A1 (ja) * 2018-03-08 2019-09-12 住友電気工業株式会社 半導体モジュール

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