WO2022219937A1 - シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法 - Google Patents

シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法 Download PDF

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WO2022219937A1
WO2022219937A1 PCT/JP2022/007392 JP2022007392W WO2022219937A1 WO 2022219937 A1 WO2022219937 A1 WO 2022219937A1 JP 2022007392 W JP2022007392 W JP 2022007392W WO 2022219937 A1 WO2022219937 A1 WO 2022219937A1
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cleaning
silicon wafer
oxide film
thickness
natural oxide
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PCT/JP2022/007392
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English (en)
French (fr)
Japanese (ja)
Inventor
康太 藤井
達夫 阿部
健作 五十嵐
剛 大槻
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信越半導体株式会社
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Priority to KR1020237033916A priority Critical patent/KR20230169118A/ko
Priority to CN202280026918.6A priority patent/CN117136428A/zh
Publication of WO2022219937A1 publication Critical patent/WO2022219937A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/06—Silicon
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon

Definitions

  • the present invention relates to a method for cleaning a silicon wafer and a method for manufacturing a silicon wafer with a natural oxide film.
  • RCA cleaning is a cleaning method in which SC1 (Standard Cleaning 1) cleaning, SC2 (Standard Cleaning 2) cleaning, and DHF (Diluted Hydrofluoric Acid) cleaning are combined according to the purpose.
  • SC1 cleaning mixes ammonia water and hydrogen peroxide water in an arbitrary ratio, lifts off adhering particles by etching the silicon wafer surface with an alkaline cleaning liquid, and further utilizes electrostatic repulsion between the silicon wafer and the particles. This cleaning method removes particles while suppressing redeposition to the silicon wafer.
  • SC2 cleaning is a cleaning method of dissolving and removing metal impurities on the surface of a silicon wafer with a cleaning liquid obtained by mixing hydrochloric acid and hydrogen peroxide water in an arbitrary ratio.
  • DHF cleaning is a cleaning method for removing a native oxide film on the surface of a silicon wafer with dilute hydrofluoric acid.
  • Ozone water cleaning which has a strong oxidizing power, may also be used to remove organic matter adhering to the silicon wafer surface and to form a natural oxide film on the silicon wafer surface after DHF cleaning.
  • the particle quality of silicon wafers after cleaning is important, and these cleanings are combined according to the purpose.
  • Semiconductor elements such as MOS (Metal Oxide Semiconductor) capacitors and transistors are formed on the surface of a semiconductor silicon wafer. Insulating films such as gate oxide films formed in these semiconductor elements are used under high electric field strength, and silicon oxide films are often used as such insulating films because they are easy to form.
  • MOS Metal Oxide Semiconductor
  • Dense silicon oxide films with high insulating properties are produced by thermally oxidizing silicon wafers, but in general, from the viewpoint of particle adhesion, etc., silicon wafers at the time of shipment have a natural oxide film formed during cleaning. . For this reason, thermal oxidation is often applied to silicon wafers on which a natural oxide film is formed. At this time, it is known that the thickness of the thermal oxide film is affected by the film quality (film thickness and structure) of the natural oxide film before thermal oxidation.
  • the thermal oxide film is desired to be thin, the natural oxide film should also be thin, and if the thermal oxide film is to be thick, the natural oxide film should also be thick. Therefore, in recent years, it is especially demanded to control the thickness of the native oxide film within a predetermined range with good reproducibility and high accuracy.
  • Patent Document 1 a silicon wafer that has not been cleaned with hydrofluoric acid (simply referred to as “DHF cleaning” or “HF cleaning”) is SC1 cleaned, and then cleaned with an oxidizing cleaning liquid (ozone water or peroxide A cleaning method is described in which the thickness of the natural oxide film is increased by cleaning with hydrogen water).
  • DHF cleaning is not performed in Patent Document 1
  • particles not removed by SC1 cleaning may remain on the wafer surface, degrading the particle quality.
  • the film thickness of all of the natural oxide films described in the examples is 1.0 nm, and it cannot be said that the film thickness of the natural oxide film can be controlled within a predetermined range.
  • Patent Document 2 after SC1 cleaning, particles not removed by SC1 cleaning are removed by HF cleaning, and then ozone water cleaning is performed to suppress reattachment of particles and reduce surface roughness of the wafer. It describes a cleaning method that However, when the bare surface is cleaned with ozone water, the oxidation progresses rapidly. Therefore, although it is possible to form an oxide film with a uniform thickness with good reproducibility, the rapid oxidation reaction results in the formation of a natural oxide film. It was difficult to change and control the thickness within a predetermined range.
  • An object of the present invention is to provide a method for cleaning a wafer.
  • the present invention has been made to achieve the above objects, and is a method for cleaning a silicon wafer, comprising: a first cleaning step of cleaning the silicon wafer with hydrofluoric acid; a second cleaning step of cleaning the silicon wafer with ozone water; a third cleaning step of cleaning the silicon wafer cleaned with the ozone water with an SC1 cleaning liquid; and cleaning the silicon wafer cleaned with the SC1 cleaning liquid with the ozone water. and a fourth cleaning step.
  • the cleaning method can control the natural oxide film thickness with good reproducibility and high accuracy.
  • the cleaning time of the fourth cleaning step can be adjusted to control the thickness of the natural oxide film formed on the surface of the silicon wafer.
  • a method of cleaning a silicon wafer may be provided in which a relationship is obtained and the cleaning time of the fourth cleaning step is set based on the correlation.
  • the cleaning time can be set more easily.
  • the cleaning time of the fourth cleaning process is set so that the thickness of the natural oxide film formed on the surface of the silicon wafer in the second cleaning process is equal to the thickness of the natural oxide film.
  • a method for cleaning a silicon wafer can be set.
  • the thickness of the native oxide film that has been thinned by the etching of the SC1 cleaning can be made equal to the thickness before the SC1 cleaning.
  • the silicon wafer cleaning method may include an SC2 cleaning step of cleaning the silicon wafer with an SC2 cleaning liquid after the third cleaning step and before the fourth cleaning step.
  • the metal impurities on the surface of the silicon wafer can be dissolved and removed, and the quality of the silicon wafer can be improved.
  • it can be a method for manufacturing a silicon wafer with a natural oxide film, which manufactures a silicon wafer with a natural oxide film by the above-described method for cleaning a silicon wafer.
  • the silicon wafer cleaning method of the present invention particle quality can be improved by performing both HF cleaning and SC1 cleaning. Further, by performing the fourth cleaning step, the cleaning method can control the thickness of the natural oxide film with good reproducibility and high accuracy. As a result, even when a thermal oxide film is formed, it is possible to obtain a silicon wafer in which the film thickness of the thermal oxide film can be easily controlled with high precision.
  • FIG. 1 is a flow chart showing an example of a silicon wafer cleaning method according to the present invention. The difference in the thickness of the native oxide film formed on the silicon wafer surface due to cleaning conditions is shown. The difference in the thickness of the thermal oxide film formed by thermal oxidation depending on the cleaning conditions is shown.
  • the present inventors diligently studied whether it is possible to vary the thickness of the natural oxide film within a predetermined range and control it with high accuracy for silicon wafers that have been subjected to HF cleaning for improving particle quality. did.
  • the present inventors found a method for cleaning a silicon wafer, comprising a first cleaning step of cleaning the silicon wafer with hydrofluoric acid and a second cleaning step of cleaning the silicon wafer cleaned with hydrofluoric acid with ozone water. a cleaning step of cleaning the silicon wafer cleaned with the ozone water with an SC1 cleaning liquid; and a fourth cleaning step of cleaning the silicon wafer cleaned with the SC1 cleaning liquid with the ozone water.
  • FIG. 1 is a flow chart showing an example of a silicon wafer cleaning method according to the present invention.
  • the silicon wafer to be cleaned in the present invention is not particularly limited, and examples thereof include polished silicon wafers, epitaxial wafers, SOI wafers, and the like. In particular, it can be suitably applied to cleaning silicon wafers after polishing to which abrasive grains and the like used for polishing have adhered.
  • a silicon wafer is cleaned with hydrofluoric acid (HF cleaning).
  • HF cleaning hydrofluoric acid
  • concentration of HF in the hydrofluoric acid to be used is 0.3 to 3.0% by weight
  • the temperature is 10 to 30° C.
  • the washing time is 60 to 360 seconds.
  • abrasive grains remaining in the polishing process particles strongly associated with the natural oxide film, and metals in the natural oxide film can be removed together with the natural oxide film.
  • the load of SC1 cleaning in the third cleaning step (S3) described later increases, and for example, particles strongly adhered to the native oxide film are difficult to be removed by SC1 cleaning. Particles remain.
  • the "first cleaning step” may be simply referred to as "S1".
  • ozone water used has an ozone concentration of 3 to 25 ppm, a temperature of 10 to 30° C., and a washing time of 60 to 360 seconds.
  • the surface of the silicon wafer becomes a hydrophobic surface, and particles tend to adhere to it. Therefore, reattachment of particles can be suppressed by forming a natural oxide film on the surface of the silicon wafer in a short time by washing with ozone water to make it a hydrophilic surface.
  • the "second cleaning step” may be simply referred to as "S2".
  • the mixing ratio (volume ratio) of the SC1 cleaning solution is, for example, ammonia water (28% by weight):hydrogen peroxide solution (30% by weight):water 1:1:10, temperature is 30 to 80° C., cleaning time is 90 to 360. Seconds are preferred. In addition, it is better to reduce the etching amount of SC1 within a range in which the particle quality can be sufficiently secured.
  • the "third cleaning step” may be simply referred to as "S3".
  • SC2 washing process Further, after SC1 cleaning in S3 and before ozone water cleaning in S4 to be described later, cleaning with SC2 cleaning liquid can be performed. Although metal impurities are removed to some extent by the HF cleaning of S1, SC2 cleaning is effective in further reducing the concentration of metal contaminants, and can be performed as necessary.
  • the silicon wafer that has been cleaned with the SC1 cleaning liquid in S3 and preferably further SC2 cleaned is cleaned with ozone water.
  • This cleaning with ozone water increases the film thickness of the natural oxide film.
  • the "fourth cleaning step” may be simply referred to as "S4".
  • ozone water cleaning of S4 a natural oxide film is already formed on the surface of the silicon wafer. Therefore, compared with the case where the bare surface is oxidized by washing with ozone water, the progress of oxidation is slowed down, and the film thickness of the natural oxide film can be controlled with good reproducibility and high precision.
  • the thickness of the natural oxide film formed on the surface of the silicon wafer is preferable to adjust the thickness of the natural oxide film formed on the surface of the silicon wafer by adjusting the cleaning time. This is because the cleaning time adjustment is the simplest and has the highest controllability and accuracy. At this time, the concentration and temperature can be the same as in S2.
  • Fig. 2 shows the relationship between the cleaning conditions (cleaning process) and the thickness of the native oxide film formed.
  • Silicon wafer after S1, S2 cleaning (S1 ⁇ S2)
  • Silicon wafer after S1, S2, S3 cleaning (S1 ⁇ S2 ⁇ S3)
  • S1, S2, S3, after S4 cleaning (S1 ⁇ S2 ⁇ S3 ⁇ S4)
  • S1 ⁇ S2 ⁇ S3 ⁇ S4 shows the respective natural oxide film thicknesses of silicon wafers that have been subjected to ozone water cleaning for 3 minutes, 12 minutes, and 30 minutes. It can be seen that the thickness of the oxide film formed in S1 ⁇ S2 is reduced by performing SC1 cleaning in S3. This is because the SC1 cleaning (S3) for improving the particle quality etches the natural oxide film. The subsequent S4 cleaning increases the thickness of the natural oxide film.
  • the thickness of the natural oxide film depends on the cleaning time of the ozone water cleaning, and the longer the cleaning time, the thicker the natural oxide film thickness. It is understood that Therefore, by adjusting the cleaning time of S4, it is possible to thicken the natural oxide film thinned by the SC1 cleaning of S3 within a predetermined range.
  • a plurality of silicon wafers on which a natural oxide film is formed such as the silicon wafers after cleaning in S1, S2, and S3, are prepared in advance, and are cleaned by changing the ozone water cleaning time in S4. It is also preferable to investigate and determine the correlation with the increasing natural oxide film thickness, and to set the cleaning time of S4 to achieve the desired thickness based on this correlation. By using such a correlation, the cleaning time can be set more easily.
  • the cleaning time of the fourth cleaning process so that the natural oxide film has the same thickness as the natural oxide film formed in the second cleaning process of S2.
  • the thickness of the natural oxide film thinned by etching in the SC1 cleaning (S3) can be made equal to the thickness before the SC1 cleaning.
  • FIG. 3 shows the oxide film thickness after thermal oxidation with a target thickness of 5.1 nm using a wafer of the same level as the silicon wafer shown in FIG. Comparing the levels, the cleaning levels S1, S2 and S3, which have the thinnest natural oxide film, also have the thinnest thermal oxide film. It can be seen that the thickness of the thermally oxidized film is the thickest at the level of 30 minutes of ozone water cleaning time in S4. Further, from FIG. 3, for example, when the target thickness of the thermal oxide film is 5.09 nm, this can be achieved by setting the ozone cleaning time in S4 to 3 minutes.
  • the cleaning time of S4 is set to 12 minutes in order to improve the electrical characteristics of the oxide film
  • the natural oxide film thickness (FIG. 2) can be obtained equivalent to that of the cleaning levels of S1 and S2.
  • the thickness of the thermal oxide film (FIG. 3) can be the same as that of the cleaning levels S1 and S2.
  • the thickness of the native oxide film can be controlled within a predetermined range with high accuracy.
  • Example 1 A polished silicon wafer was prepared.
  • the prepared silicon wafer was subjected to HF cleaning (S1), then ozone water cleaning (S2), further SC1 cleaning (S3), and finally ozone water cleaning (S4) (Examples 1 and 3). , 5, 7). Further, standards (Examples 2, 4, 6, and 8) were also prepared in which the SC2 cleaning was performed after the SC1 cleaning in S3, and then the ozone water cleaning in S4 was performed.
  • the HF cleaning of S1 had an HF concentration of 0.5% by weight and a cleaning time of 3 minutes.
  • the ozone concentration was 20 ppm and the cleaning time was 3 minutes.
  • the SC1 cleaning of S3 was performed using a mixture of ammonia water (28% by weight):hydrogen peroxide solution (30% by weight):water at a ratio of 1:1:10, a liquid temperature of 70° C., and cleaning time of 3 minutes.
  • SC2 cleaning was performed using a mixture of hydrochloric acid:hydrogen peroxide:water of 1:1:100, and cleaning time was 3 minutes.
  • the ozone concentration was 20 ppm and the cleaning time was 3, 6, 12 and 30 minutes.
  • the quality of particles on the surface of the wafer after cleaning was evaluated with a particle size of 19 nm or more using a particle counter SP5 manufactured by KLA, and the thickness of the natural oxide film was measured according to J. Phys. A. It was evaluated with a spectroscopic ellipsometry M-2000V manufactured by Woollam.
  • Table 1 shows the wafer cleaning conditions, the natural oxide film thickness, and the number of particles in the example.
  • the number of particles detected was 15 to 23 pcs, which was good compared to 72 pcs of the level without HF cleaning (Comparative Example 1), which will be described later. It is considered that the particle quality became good by performing both the HF cleaning of S1 and the SC1 cleaning of S3. The longer the ozone cleaning time in S4 is, the thicker the natural oxide film becomes.
  • Comparative example 1 In Comparative Example 1, the silicon wafer after polishing was prepared in the same manner as in Example, and after SC1 and SC2 cleanings were performed, ozone water cleaning was performed. SC1 and SC2 were performed under the same conditions as in the example, and the cleaning with ozone water was performed at a concentration of 20 ppm for 3 minutes under the same conditions as in S2 of the example. As in the example, the particle quality of the wafer after cleaning was evaluated with a particle counter, and the natural oxide film thickness was evaluated with spectroscopic ellipsometry.
  • Table 2 shows the wafer cleaning conditions, the natural oxide film thickness, and the number of particles in the comparative example.
  • Comparative Example 1 As shown in Table 2, the particle quality in Comparative Example 1 was 72 pcs, which was higher than in Examples 1-8. This is because in Comparative Example 1, only SC1 cleaning was performed without HF cleaning. The thickness of the natural oxide film was the same as in Examples 1 and 2. This is because the ozone water cleaning time is the same as S4 in the first and second embodiments.
  • Comparative Examples 2 and 3 In Comparative Examples 2 and 3, the prepared silicon wafer was subjected to HF cleaning (S1), then ozone water cleaning (S2) for 3 minutes (Comparative Example 2) and 12 minutes (Comparative Example 3), and SC1 cleaning (S3). and SC2 washes. HF cleaning, SC1 cleaning, and SC2 cleaning are the same conditions as in the example. As a result, as shown in Table 2, the particle quality of the resulting natural oxide film was equivalent to that of the example. On the other hand, the thickness of the natural oxide film was 1.022 nm in Comparative Example 2 in which the ozone cleaning time of S2 was 3 minutes, and 1.034 nm in Comparative Example 3 in which the ozone cleaning time was 12 minutes.
  • Comparative Examples 4 and 5 In Comparative Examples 4 and 5, after the silicon wafer was SC1 cleaned, HF cleaning was performed, and ozone water cleaning was performed for 3 minutes (Comparative Example 4) and 12 minutes (Comparative Example 5). SC1 cleaning and HF cleaning are performed under the same conditions as in the example. As shown in Table 2, the particle quality was 25 pcs in Comparative Example 4 and 21 pcs in Comparative Example 5, which were equivalent to those of the example. On the other hand, the natural oxide film thickness was 1.201 nm in Comparative Example 4 in which the ozone cleaning time was 3 minutes, and 1.213 nm in Comparative Example 5 in which the ozone cleaning time was 12 minutes.
  • the natural oxide film thickness can be controlled with high reproducibility and high accuracy while improving the quality of the particles.
  • the present invention is not limited to the above embodiments.
  • the above-described embodiment is an example, and any device having substantially the same configuration as the technical idea described in the claims of the present invention and exhibiting the same effect is the present invention. included in the technical scope of

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PCT/JP2022/007392 2021-04-13 2022-02-22 シリコンウェーハの洗浄方法及び自然酸化膜付きシリコンウェーハの製造方法 WO2022219937A1 (ja)

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KR1020237033916A KR20230169118A (ko) 2021-04-13 2022-02-22 실리콘 웨이퍼의 세정방법 및 자연산화막이 부착된 실리콘 웨이퍼의 제조방법
CN202280026918.6A CN117136428A (zh) 2021-04-13 2022-02-22 硅晶圆的清洗方法及带自然氧化膜的硅晶圆的制造方法

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CN116759295A (zh) * 2023-08-14 2023-09-15 天府兴隆湖实验室 一种硅片清洗方法及硅片清洗设备

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JP2024071899A (ja) * 2022-11-15 2024-05-27 株式会社Sumco シリコンウェーハの洗浄方法、シリコンウェーハの製造方法、及びシリコンウェーハ

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JP2003173998A (ja) * 2001-12-04 2003-06-20 Wacker Nsce Corp 半導体基板の洗浄方法
JP2019021746A (ja) * 2017-07-14 2019-02-07 信越半導体株式会社 シリコンエピタキシャルウェーハの製造方法及びシリコンエピタキシャルウェーハ
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Publication number Priority date Publication date Assignee Title
CN116759295A (zh) * 2023-08-14 2023-09-15 天府兴隆湖实验室 一种硅片清洗方法及硅片清洗设备
CN116759295B (zh) * 2023-08-14 2023-11-14 天府兴隆湖实验室 一种硅片清洗方法及硅片清洗设备

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