WO2022195947A1 - Substrat céramique ain et élément chauffant pour dispositif de fabrication de semi-conducteur - Google Patents

Substrat céramique ain et élément chauffant pour dispositif de fabrication de semi-conducteur Download PDF

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Publication number
WO2022195947A1
WO2022195947A1 PCT/JP2021/040196 JP2021040196W WO2022195947A1 WO 2022195947 A1 WO2022195947 A1 WO 2022195947A1 JP 2021040196 W JP2021040196 W JP 2021040196W WO 2022195947 A1 WO2022195947 A1 WO 2022195947A1
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ceramic substrate
aln
resistance heating
aln ceramic
heating element
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PCT/JP2021/040196
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English (en)
Japanese (ja)
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啓太 山名
和宏 ▲のぼり▼
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日本碍子株式会社
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Priority to CN202180010171.0A priority Critical patent/CN115606318A/zh
Priority to JP2022510795A priority patent/JP7074944B1/ja
Priority to KR1020227038927A priority patent/KR20220164583A/ko
Publication of WO2022195947A1 publication Critical patent/WO2022195947A1/fr
Priority to US18/046,614 priority patent/US20230138000A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits

Definitions

  • the present invention relates to AlN ceramic substrates and heaters for semiconductor manufacturing equipment.
  • a known heater for a semiconductor manufacturing apparatus includes an AlN ceramic substrate and a resistance heating element embedded inside the AlN ceramic substrate. Such heaters for semiconductor manufacturing equipment are used to heat a wafer mounted on the surface of an AlN ceramic substrate. Further, as a heater for semiconductor manufacturing equipment, as disclosed in Patent Document 2, a heater in which a resistance heating element and an electrostatic electrode are embedded in an AlN ceramic base is also known. In such a heater for a semiconductor manufacturing apparatus, if current leaks from the resistance heating element to the wafer or from the electrostatic electrode to the wafer, the wafer will be damaged. Therefore, it is preferable to control the volume resistivity of the AlN ceramic substrate to a high value.
  • Patent Document 3 as an AlN ceramic substrate, a mixed powder obtained by adding yttrium oxide powder as a sintering aid to AlN raw material powder is granulated, and the granules are used to produce a disk-shaped molded body.
  • a hot press sintering of the compact at 1850 to 1890° C. is disclosed.
  • the volume resistivity of the AlN ceramic substrate at 550° C. is as high as 1 ⁇ 10 9 to 2.6 ⁇ 10 9 ⁇ cm.
  • the leakage current flowing through the AlN ceramic substrate may not be sufficiently blocked.
  • the present invention has been made to solve such problems, and the main object thereof is to provide an AlN ceramic substrate having a higher volume resistivity at high temperatures than conventional ones.
  • the AlN ceramic substrate of the present invention is An AlN ceramic substrate comprising yttrium aluminate, Volume resistivity at 550 ° C. is 3 ⁇ 10 9 ⁇ cm or more, It is.
  • This AlN ceramic substrate has a higher volume resistivity at high temperatures than conventional ones. Therefore, when this AlN ceramic substrate is used as an AlN ceramic substrate in which a resistance heating element of a heater for semiconductor manufacturing equipment is embedded, it is possible to sufficiently prevent leakage current from flowing through the AlN ceramic substrate.
  • a volume resistivity of 5 ⁇ 10 9 ⁇ cm or more is preferable because leakage current can be further suppressed, and a volume resistivity of 1 ⁇ 10 10 ⁇ cm or more is more preferable because the thickness of the ceramic substrate can be further reduced.
  • Examples of yttrium aluminate include Y 4 Al 2 O 9 (YAM) and YAlO 3 (YAL).
  • the average particle size of the AlN sintered particles is preferably 1.5 ⁇ m or more and 2.5 ⁇ m or less, and yttrium aluminate exists in a dispersed state at the grain boundaries between the AlN sintered particles. is preferred. In this way, the yttrium aluminate is finely and uniformly dispersed. Therefore, it is possible to prevent a current path from occurring in the yttrium aluminate and increase the volume resistivity of the AlN ceramic substrate at high temperatures.
  • a heater for semiconductor manufacturing equipment has a resistance heating element embedded in the AlN ceramic substrate described above.
  • the volume resistivity of the AlN ceramic substrate at high temperatures is even higher than before. Therefore, it is possible to sufficiently prevent leakage current from flowing through the AlN ceramic substrate.
  • the resistance heating element is preferably made of Mo
  • the AlN ceramic base includes a first annular layer surrounding the resistance heating element so as to be in contact with the resistance heating element.
  • a second annular layer surrounding the first annular layer and the first annular layer preferably has a higher Y content and a wider layer width than the second annular layer.
  • the first annular layer may continuously surround the resistive heating element and the second annular layer may continuously surround the first annular layer.
  • the second annular layer may have a shape in which a portion of the annular shape has a discontinuous portion, and a shape that forms a single ring (smooth ring) if the discontinuous portion is virtually connected.
  • the average value per unit width of the Y content distributed in the width direction of the first annular layer is larger than the average value per unit width of the Y content distributed in the width direction of the second annular layer good.
  • FIG. 2 is a plan view of the heater 10 for semiconductor manufacturing equipment; AA sectional view of FIG. Sectional drawing of the modification of the 2nd annular layer L2.
  • 4 is a SEM photograph of a cross section containing Mo of the AlN ceramic sintered body 12 of Example 1.
  • FIG. 4 is a schematic diagram of a cross section containing Mo of the AlN ceramic sintered body 12 of Example 1.
  • FIG. 4 is a graph showing the results of EPMA analysis of Example 1.
  • FIG. 4 is a SEM photograph of a cross section containing Mo of the AlN ceramic sintered body of Comparative Example 1.
  • FIG. 4 is a schematic diagram of a cross section containing Mo of the AlN ceramic sintered body of Comparative Example 1.
  • FIG. 4 is a graph showing the results of EPMA analysis of Comparative Example 1.
  • FIG. 1 is a plan view of a heater 10 for semiconductor manufacturing equipment
  • FIG. 2 is a sectional view taken along line AA of FIG. Note that the dashed-dotted lines in FIG. 1 indicate the boundaries of the zones.
  • the inner and outer resistance heating elements 30 and 40 are indicated by hidden lines (dotted lines), but the RF electrode 20 is omitted.
  • a heater 10 for a semiconductor manufacturing apparatus has an RF electrode 20, an inner circumference side resistance heating element 30, and an outer circumference side resistance heating element 40 embedded in a disk-shaped AlN ceramic substrate 12.
  • the AlN ceramic substrate 12 contains yttrium aluminate (for example, YAL or YAM), and has a wafer mounting surface 12a on its upper surface.
  • the volume resistivity of the AlN ceramic substrate 12 at 550° C. is 3 ⁇ 10 9 ⁇ cm or higher, preferably 5 ⁇ 10 9 ⁇ cm or higher, more preferably 1 ⁇ 10 10 ⁇ cm or higher.
  • the AlN ceramic substrate 12 is divided into an inner zone Zin and an outer zone Zout when viewed from above.
  • the inner peripheral zone Zin is a circular zone with a diameter smaller than the diameter of the AlN ceramic substrate 12 .
  • the outer zone Zout is an annular zone surrounding the inner zone Zin.
  • the RF electrode 20 is a circular metal mesh (eg, Mo coil) and is provided substantially parallel to the wafer mounting surface 12a.
  • the RF electrode 20 is buried closer to the wafer mounting surface 12 a than the inner resistance heating element 30 and the outer resistance heating element 40 .
  • the diameter of RF electrode 20 is slightly smaller than the diameter of AlN ceramic substrate 12 .
  • a high-frequency voltage is applied between the RF electrode 20 and a parallel plate electrode (not shown) spaced apart from the wafer mounting surface 12a.
  • the RF electrode 20 is connected to the RF connecting member 22 .
  • the RF connection member 22 has an upper end connected to the lower surface of the RF electrode 20 and a lower end exposed from the lower surface 12 b of the AlN ceramic substrate 12 .
  • the RF connection member 22 is provided so as to pass through the gaps in the wiring pattern of the inner resistance heating element 30 .
  • An RF connecting member 22 is used to apply a high frequency voltage between the RF electrode 20 and the parallel plate electrodes.
  • the inner circumference side resistance heating element 30 is a metal coil (eg, Mo coil) and is provided substantially parallel to the wafer mounting surface 12a.
  • the inner peripheral resistance heating element 30 is wired from one of a pair of terminals 32 and 34 provided near the center of the AlN ceramic substrate 12 to the entire inner peripheral zone Zin in a unicursal manner without crossing. It is provided so as to reach the other of the pair of terminals 32 and 34 .
  • a pair of terminals 32 and 34 are connected to a pair of inner peripheral side connecting members 36 and 38 .
  • the lower ends of the pair of inner peripheral side connecting members 36 and 38 are exposed from the lower surface 12b of the AlN ceramic substrate 12. As shown in FIG.
  • a voltage is applied between the pair of terminals 32 and 34 using the pair of inner peripheral connecting members 36 and 38 .
  • the outer-peripheral-side resistance heating element 40 is a metal coil (for example, a Mo coil) and is provided substantially parallel to the wafer mounting surface 12a.
  • the outer resistance heating element 40 passes through the inner zone Zin from one of a pair of terminals 42 and 44 provided near the center of the AlN ceramic substrate 12 and is led out to the outer zone Zout. , and then pulled back to the inner peripheral zone Zin to reach the other of the pair of terminals 42 and 44 .
  • a pair of terminals 42 and 44 are connected to a pair of outer peripheral side connection members 46 and 48 .
  • the lower ends of the pair of outer peripheral side connecting members 46 and 48 are exposed from the lower surface 12b of the AlN ceramic substrate 12.
  • a voltage is applied between the pair of terminals 42 and 44 using the pair of outer connection members 46 and 48 .
  • the outer resistance heating element 40 is provided on the same plane as the inner resistance heating element 30 .
  • the heater 10 for semiconductor manufacturing equipment is installed in a chamber (not shown).
  • a wafer W is mounted on the wafer mounting surface 12a of the heater 10 for a semiconductor manufacturing apparatus, and an external power source is connected to the connection members 36 and 38 of the inner peripheral resistance heating element 30, so that an electric current is generated between the pair of terminals 32 and 34.
  • an external power source is connected to the connection members 36 and 38 of the inner peripheral resistance heating element 30, so that an electric current is generated between the pair of terminals 32 and 34.
  • another external power supply is connected to the connection members 46 and 48 of the outer resistance heating element 40 to apply a voltage between the pair of terminals 42 and 44 .
  • the inner peripheral resistance heating element 30 and the outer peripheral resistance heating element 40 generate heat to heat the wafer W to a predetermined temperature.
  • the temperature of the inner zone Zin and the outer zone Zout can be individually controlled.
  • a high-frequency voltage is applied between a parallel plate electrode (not shown) and the RF electrode 20 spaced apart above the wafer W, and the wafer W is subjected to various processes necessary for fabricating semiconductor chips.
  • the application of the high frequency voltage to the RF electrode 20 and the application of voltage to the inner and outer resistance heating elements 30 and 40 are terminated, and the wafer W is removed from the wafer mounting surface 12a.
  • AlN raw material powder is prepared.
  • the AlN raw material powder may contain a small amount of O, C, Ti, and Ca.
  • the AlN raw material powder preferably contains 0.65 to 0.90 mass % of O, 220 to 380 mass ppm of C, 95 mass ppm or less of Ti, and 250 mass ppm or less of Ca.
  • the average particle diameter of the AlN raw material powder is preferably set so that the average particle diameter of the AlN sintered particles after firing is 1.5 ⁇ m or more and 2.5 ⁇ m or less, for example, 1.5 ⁇ m or more and 2.0 ⁇ m or less. .
  • Y 2 O 3 powder is added as a sintering aid to the prepared AlN raw material powder and mixed to obtain a mixed powder, which is granulated by spray drying.
  • Y 2 O 3 is added so as to be 4 to 6% by mass with respect to the entire mixed powder.
  • the average particle size of the Y 2 O 3 powder is preferably of submicron order.
  • a mixing method wet mixing using an organic solvent may be employed, or dry mixing such as a ball mill, vibration mill, and dry bag mixing may be employed.
  • the RF electrode 20 and the inner and outer peripheral resistance heating elements 30 and 40 are embedded in the granules and molded to produce a compact.
  • the formed body is fired to obtain an AlN sintered body.
  • the heater 10 for semiconductor manufacturing equipment is obtained.
  • a firing method for example, hot press firing can be used.
  • the maximum temperature (firing temperature) during hot press firing is preferably set in the range of 1650°C or higher and 1750°C or lower, preferably 1670°C or higher and 1730°C or lower.
  • the firing temperature is maintained for 0.5 to 100 hours
  • the press pressure is 5 to 50 MPa
  • the atmosphere is a nitrogen atmosphere or a vacuum atmosphere (for example, 0.13 to 133.3 Pa).
  • the average particle size of the AlN sintered particles is preferably 1.5 ⁇ m or more and 2.5 ⁇ m or less. It is preferable that yttrium aluminate, which is finer than the AlN sintered particles, is present in a dispersed state at grain boundaries between the AlN sintered particles. If the average particle size of the AlN sintered particles is larger than this, the yttrium aluminate exists in a wet state at the grain boundary between the AlN sintered particles, making it easier to form a current path. not high enough.
  • the average particle size of the AlN sintered particles is 1.5 ⁇ m or more and 2.5 ⁇ m or less, yttrium aluminate exists in a state of being dispersed in the grain boundaries between the AlN sintered particles, so a current path is formed. and the volume resistivity at high temperatures is sufficiently high.
  • the AlN ceramic substrate 12 has an inner surface so as to be in contact with the inner resistance heating element 30 as shown in the enlarged view of FIG.
  • a first annular layer L1 continuously (that is, without interruption) surrounding the circumferential resistance heating element 30 and a second annular layer L2 continuously surrounding the first annular layer L1 appear.
  • the first annular layer L1 has a higher Y content and a wider layer width than the second annular layer L2. That is, the first annular layer L1 is a Y-rich layer, and the second annular layer L2 is a Y-poor layer.
  • Such a microstructure is also seen around the outer resistance heating element 40 .
  • the reason why the first annular layer L1 becomes the Y-rich layer is considered as follows.
  • the Y concentration in the region in contact with the Mo inner peripheral resistance heating element 30 decreases.
  • Mo has a high affinity for oxygen and tries to take oxygen from the yttrium aluminate around Mo, whereas the yttrium aluminate around Mo does not want to take oxygen. Therefore, it is considered to move to a position away from Mo.
  • the Y concentration in the region of the AlN ceramic substrate 12 in contact with the Mo inner resistance heating element 30 is considered to decrease. This may be one of the reasons why the volume resistivity at high temperatures is not sufficiently high.
  • the firing temperature when the firing temperature is 1650° C. or higher and 1750° C. or lower, the Y concentration in the region (first annular layer L1) in contact with the Mo inner circumference side resistance heating element 30 becomes relatively high. If the firing temperature is 1750° C. or lower, it is difficult for Mo to deprive the surrounding yttrium aluminate of oxygen. As a result, when the firing temperature is 1650° C. or higher and 1750° C. or lower, the Y concentration in the region (first annular layer L1) of the AlN ceramic substrate 12 that is in contact with the Mo inner peripheral side resistance heating element 30 does not decrease. It is thought that it will become a rich layer. This may be one of the reasons why the volume resistivity at high temperatures is sufficiently high.
  • the volume resistivity of the AlN ceramic substrate 12 at a high temperature (550° C.) is 3 ⁇ 10 9 ⁇ cm or more, which is higher than that of the conventional heater. Therefore, it is possible to sufficiently prevent leakage current from flowing through the AlN ceramic substrate 12 .
  • a volume resistivity of 5 ⁇ 10 9 ⁇ cm or more is preferable because leakage current can be further suppressed, and a volume resistivity of 1 ⁇ 10 10 ⁇ cm or more is more preferable because the thickness of the ceramic substrate can be further reduced.
  • the average particle size of the AlN sintered particles in the AlN ceramic substrate 12 is preferably 1.5 ⁇ m or more and 2.5 ⁇ m or less, and yttrium aluminate exists in a dispersed state at the grain boundary between the AlN sintered particles. is preferred. In this way, the yttrium aluminate is finely and uniformly dispersed. Therefore, it is possible to prevent the occurrence of a current path of yttrium aluminate and increase the volume resistivity of the AlN ceramic substrate 12 at high temperatures.
  • the inner and outer peripheral resistance heating elements 30 and 40 are preferably made of Mo. and a second annular layer L2 that continuously surrounds the first annular layer L2.
  • the first annular layer L1 has a higher Y content than the second annular layer L2 A wide width is preferred.
  • Such structures are believed to contribute in some way to the high volume resistivity at high temperatures. Such a structure is obtained by performing the operation of keeping for at least one hour or more until the maximum temperature is reached (between 1500 ° C. and 10 ° C. below the maximum temperature) when performing hot press firing. , is likely to occur.
  • the heater 10 for a semiconductor manufacturing apparatus includes a mixed powder of AlN powder and Y 2 O 3 powder (the Y 2 O 3 powder is 4% by mass or more and 6% by mass or less of the entire mixed powder), the RF electrode 20 and the inner circumference.
  • the molded body is hot-press fired at a maximum firing temperature of 1650° C. or higher and 1750° C. or lower. It is obtained. Therefore, it is possible to relatively easily manufacture the heater 10 for semiconductor manufacturing equipment, which can sufficiently prevent the leak current from flowing through the AlN ceramic substrate 12 .
  • the RF electrode 20 is embedded in the AlN ceramic substrate 12, but the RF electrode 20 may be omitted, the RF electrode 20 may be replaced with an electrostatic electrode, or the RF electrode 20 may be replaced with an electrostatic electrode. It may also be used as an electrostatic electrode.
  • an electrostatic electrode is provided, the wafer W can be attracted and held on the wafer mounting surface 12a by applying a voltage to the electrostatic electrode.
  • a metal mesh is exemplified as the RF electrode 20, but a metal plate may be employed.
  • the metal coils have been exemplified as the inner and outer peripheral resistance heating elements 30 and 40, metal ribbons and metal meshes may also be employed.
  • the RF electrode 20 and the inner and outer resistance heating elements 30 and 40 may be formed by printing a conductive paste in a predetermined shape or pattern.
  • the inner resistance heating element 30 is embedded in the inner zone Zin and the outer resistance heating element 40 is embedded in the outer zone Zout.
  • a resistance heating element may be embedded in each zone by dividing it. Alternatively, a single resistance heating element may be wired throughout the AlN ceramic substrate 12 without dividing it into a plurality of zones.
  • the inner peripheral side resistance heating element 30 and the outer peripheral side resistance heating element 40 are embedded on the same plane, but they may be embedded on different surfaces.
  • the heater 10 for a semiconductor manufacturing apparatus is illustrated, but the AlN ceramic substrate 12 can be used alone without embedding the RF electrode 20 and the inner and outer peripheral resistance heating elements 30 and 40 in the AlN ceramic substrate 12. can be made with
  • the second annular layer L2 has a shape that continuously surrounds the first annular layer L1, but it is not particularly limited to this.
  • the second annular layer L2 may have a shape that is not continuous but has an annular portion L2a that is interrupted.
  • the second annular layer L2 forms one ring (smooth ring) if the discontinuous portions L2a are virtually connected.
  • Example 1 AlN raw material powder was prepared. 5% by mass of Y 2 O 3 powder was added as a sintering aid to this AlN raw material powder and mixed by a ball mill to obtain a mixed powder, which was granulated by spray drying. Y 2 O 3 was added so as to be 5% by mass with respect to the entire mixed powder. Subsequently, using the granules of the mixed powder, a disk-shaped compact was produced. An RF electrode 20 and inner and outer resistance heating elements 30 and 40 were embedded in the compact. Then, the heater 10 for a semiconductor manufacturing apparatus was produced by hot-press firing the compact.
  • the maximum temperature (firing temperature) during firing was 1720° C.
  • the time to keep the firing temperature was 2 hours
  • the press pressure was 20 MPa
  • the atmosphere was nitrogen atmosphere.
  • the operation of keeping for 1 hour was performed twice or more until the maximum temperature was reached (from 1500° C. to a temperature 10° C. lower than the maximum temperature).
  • the crystal phase contained in the AlN ceramic substrate 12 was identified by X-ray diffraction. About 0.5 g of powder was measured for X-ray diffraction with a Bruker AXS D8 ADVANCE. The measurement conditions were a CuK ⁇ ray source, a tube voltage of 40 kV, and a tube current of 40 mA. Rietveld analysis was performed on the measurement results to identify and quantify the crystal phase. Crystal phases identified from the XRD profile were AlN, YAM, and YAL, and TiN was not confirmed.
  • Comparative Example 1 A heater for a semiconductor manufacturing apparatus was manufactured in the same manner as in Example 1, except that the maximum temperature was set to 1850° C. and the operation to keep the temperature was not performed until the maximum temperature was reached. Also in Comparative Example 1, the crystal phases identified from the XRD profile were AlN, YAM, and YAL, and TiN was not confirmed.
  • the volume resistivity of the AlN ceramic substrate 12 of the heater 10 for semiconductor manufacturing equipment of Example 1 was measured at 550°C. Measurement was performed as follows. A leak current (current flowing between the wafer W and the RF electrode 20) is obtained when a Si wafer W is placed on the wafer mounting surface 12a and a voltage is applied between the wafer W and the RF electrode 20 (metal mesh) at 550°C. ) was measured. The diameter of the RF electrode 20 was ⁇ 355.6 mm, the film thickness of the dielectric layer (the layer between the wafer mounting surface 12a and the RF electrode 20) was 1.02 mm, and the applied voltage was 660V.
  • a plurality of heaters 10 for a semiconductor manufacturing apparatus of Example 1 were produced, and the leak current was measured to be on the order of 40 mA.
  • the volume resistivity of the AlN ceramic substrate 12 at 550° C. was indirectly calculated from the leak current, the average value was 1.2 ⁇ 10 10 ⁇ cm.
  • the leakage current was measured in Comparative Example 1 in the same manner as in Example 1, it was on the order of 280 mA, and the average volume resistivity of the AlN ceramic substrate at 550° C. was 2.4 ⁇ 10 9 ⁇ cm. .
  • Example 1 When the average particle size of the AlN sintered particles was determined from the SEM photograph of the cross section containing Mo of the AlN ceramic sintered body 12 of Example 1, it was 1.9 ⁇ m. Therefore, in Example 1, it was determined that the yttrium aluminate was uniformly dispersed in the grain boundaries between fine AlN sintered particles. When the average particle size of Comparative Example 1 was determined in the same manner, the average particle size was 4.5 ⁇ m, which is larger than that of Example 1. The average particle size is obtained by obtaining a secondary electron image (magnification: 3000), drawing a straight line on the image, measuring the length of each line segment that crosses 40 particles, and calculating the average value thereof. did.
  • a secondary electron image magnification: 3000
  • FIG. 4 is a SEM photograph of a cross section of the AlN ceramic sintered body 12 of Example 1 including Mo (the inner peripheral resistance heating element 30), and FIG. 5 is a schematic diagram thereof.
  • the first annular layer L1 continuously (without interruption) surrounds Mo so as to be in contact with Mo
  • the second annular layer L2 continuously surrounds the first annular layer L1.
  • the first annular layer L1 had a large number of fine white spots (Y derived from yttrium aluminate) dispersed therein, but the second annular layer L2 had almost no such spots and was almost black.
  • FIG. 6 is a graph showing the results of EPMA analysis for Mo and Y along the arrow directions in FIG. In FIG.
  • the portions where the Mo concentration rises sharply and the portions where it falls steeply are regarded as boundaries between the resistance heating element (Mo) and the AlN ceramic sintered body.
  • the Y concentration in the first annular layer L1 was relatively high, but the Y concentration in the second annular layer L2 was almost zero. From this, it was found that the first annular layer L1 was a Y-rich layer and the second annular layer L2 was a Y-poor layer. Also, the layer width of the first annular layer L1 was wider than the layer width of the second annular layer L2.
  • FIG. 7 is a SEM photograph of a cross section containing Mo of the AlN ceramic sintered body of Comparative Example 1
  • FIG. 8 is a schematic diagram thereof.
  • a first layer surrounding Mo so as to be in contact with Mo and a second layer surrounding the first layer were observed.
  • the first layer was almost black with almost no spots, and the second layer had relatively many spots.
  • the second layer was non-continuous and discontinuous.
  • FIG. 9 shows the results of EPMA analysis of Mo and Y along the arrow directions in FIG. In FIG. 9, the portions where the Mo concentration steeply rises and falls are regarded as boundaries between the resistance heating element (Mo) and the AlN sintered body.
  • Mo resistance heating element
  • the Y concentration of the first layer was almost zero and the Y concentration of the second layer was relatively high. From this, it was found that the first layer in Comparative Example 1 was a Y-poor layer and the second layer was a Y-rich layer, that is, contrary to Example 1.
  • the present invention can be used for heaters for semiconductor manufacturing equipment.
  • Heater for semiconductor manufacturing equipment 12 AlN ceramic substrate, 12a Wafer mounting surface, 12b Lower surface, 20 RF electrode, 22 RF connection member, 30 Inner peripheral side resistance heating element, 32, 34 Terminal, 36, 38 Inner peripheral side connection Member, 40 outer resistance heating element, 42, 44 terminals, 46, 48 outer connecting member, L1 first annular layer, L2 second annular layer, W wafer, Zin inner zone, Zout outer zone.

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Resistance Heating (AREA)
  • Surface Heating Bodies (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
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Abstract

Substrat céramique AlN contenant de l'aluminate d'yttrium, la résistivité volumique à 550 °C étant d'au moins３× 109Ω.cｍ.
PCT/JP2021/040196 2021-03-18 2021-11-01 Substrat céramique ain et élément chauffant pour dispositif de fabrication de semi-conducteur WO2022195947A1 (fr)

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Application Number Priority Date Filing Date Title
CN202180010171.0A CN115606318A (zh) 2021-03-18 2021-11-01 AlN陶瓷基体及半导体制造装置用加热器
JP2022510795A JP7074944B1 (ja) 2021-03-18 2021-11-01 半導体製造装置用ヒータ
KR1020227038927A KR20220164583A (ko) 2021-03-18 2021-11-01 AlN 세라믹 기체 및 반도체 제조 장치용 히터
US18/046,614 US20230138000A1 (en) 2021-03-18 2022-10-14 AlN CERAMIC SUBSTRATE AND HEATER FOR SEMICONDUCTOR MANUFACTURING APPARATUS

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JP2003313078A (ja) * 2002-04-18 2003-11-06 Taiheiyo Cement Corp 窒化アルミニウム焼結体およびそれを用いた静電チャック
JP2015514661A (ja) * 2012-02-29 2015-05-21 ハリス，ジョナサン・エイチ 過渡液相、窒化アルミニウム製部品の常圧接合
US10403535B2 (en) * 2014-08-15 2019-09-03 Applied Materials, Inc. Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system

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