WO2022193058A1 - 显示基板、其制作方法及显示装置 - Google Patents
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- WO2022193058A1 WO2022193058A1 PCT/CN2021/080752 CN2021080752W WO2022193058A1 WO 2022193058 A1 WO2022193058 A1 WO 2022193058A1 CN 2021080752 W CN2021080752 W CN 2021080752W WO 2022193058 A1 WO2022193058 A1 WO 2022193058A1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
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- H10K59/1201—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/40—OLEDs integrated with touch screens
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K2102/301—Details of OLEDs
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- H10K59/65—OLEDs integrated with inorganic image sensors
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- H10K59/875—Arrangements for extracting light from the devices
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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Definitions
- the present disclosure relates to the field of display technology, and in particular, to a display substrate, a manufacturing method thereof, and a display device.
- one of the current solutions is to open holes (AA Hole) in the display area.
- AA Hole open holes
- holes can be drilled in the display area to reserve positions for functional modules (eg, camera modules), and the functional modules can be combined with the display area of the display screen to maximize the display area.
- Embodiments of the present disclosure provide a display substrate, a manufacturing method thereof, and a display device, and the specific solutions are as follows:
- an embodiment of the present disclosure provides a display substrate, including:
- a base substrate comprising an opening area, a display area located around the opening area, and an isolation area located between the display area and the opening area; wherein the opening area is configured to install a light extraction module;
- At least one ring of blocking walls is arranged around the opening area in the isolation area;
- an encapsulation layer located on the side of the layer where the barrier wall is located away from the base substrate, and the orthographic projection of the encapsulation layer on the base substrate completely covers the display area;
- a first protective layer located on the side of the encapsulation layer away from the base substrate, and the first protective layer at least completely covers the at least one circle of the barrier wall;
- a filling layer located on the side of the first protective layer away from the base substrate, and the filling layer is located in the isolation region, the filling layer completely covers the at least one circle of barrier walls and is connected with the encapsulation layer at least partially overlap.
- the encapsulation layer includes an organic encapsulation layer, and the organic encapsulation layer includes a first organic encapsulation portion located in the display area and a first organic encapsulation portion located in the isolation area.
- the at least one circle of barrier walls includes a second barrier wall close to the display area and a first barrier wall away from the display area, the The second organic encapsulation part covers the second barrier wall, the maximum width of the second barrier wall in the direction away from the display area is A, and the second organic encapsulation part covers the covering part of the second barrier wall
- the maximum width in the direction away from the display area is B, and B ⁇ 0.85A.
- a portion of the filling layer covering the second barrier wall has a portion with constant thickness, and the portion with constant thickness is vertically
- the thickness in the direction of the base substrate is C.
- the thickness of the filling layer gradually increases to D from the portion with constant thickness along the direction away from the display area.
- the ratio of the D to the C is between 2.5-3.
- the above-mentioned display substrate provided by the embodiments of the present disclosure further comprises: a second protective layer on the side of the filling layer away from the base substrate, the second protective layer at least completely covers the The filling layer is formed, and the second protective layer is on the filling layer, from a side close to the display area to a side away from the display area, gradually inclining in a direction close to the base substrate.
- the slope of the inclination of the second protective layer is between 0.01-0.02.
- the first protective layer further includes a film layer covering at least part of the display area, and has a first opening corresponding to the opening area .
- the second protective layer further includes a film layer covering at least part of the display area, and has a second opening corresponding to the opening area .
- the first opening and the second opening are coincident.
- the first protective layer and the second protective layer are in direct contact at least in the display area.
- the first protective layer and the second protective layer are also in direct contact with each other in the isolation region adjacent to the display region.
- the thickness of the second protective layer is the same as the material of the first protective layer.
- the thickness of the second protective layer is greater than 600 ⁇ m.
- the encapsulation layer includes a first inorganic encapsulation layer located between the organic encapsulation layer and the at least one ring of barrier walls, and a first inorganic encapsulation layer located on the a second inorganic encapsulation layer between the organic encapsulation layer and the first protective layer;
- the orthographic projection of the first inorganic encapsulation layer on the base substrate substantially coincides with the orthographic projection of the second inorganic encapsulation layer on the base substrate, and the second inorganic encapsulation layer covers the Organic encapsulation layer.
- the second inorganic encapsulation layer is in direct contact with the first protective layer at least in the isolation region.
- the second inorganic encapsulation layer further includes a film layer covering at least part of the display area, and has a third layer corresponding to the opening area. Open your mouth.
- the first opening and the third opening are coincident.
- the filling layer has a fourth opening corresponding to the opening region.
- the first opening and the fourth opening are coincident.
- the distance from the first barrier wall to the display area is smaller than the distance from the first barrier wall to the aperture area.
- the above-mentioned display substrate provided by the embodiments of the present disclosure further includes a light-emitting functional layer located between the layer where the barrier wall is located and the first inorganic encapsulation layer;
- the light-emitting functional layer has openings corresponding to the opening regions.
- the above-mentioned display substrate provided by the embodiments of the present disclosure further includes: an isolation layer located between the base substrate and the layer where the at least one ring of barrier walls is located, the isolation layer including at least one a circle of first isolation structures and/or at least one circle of second isolation structures; wherein,
- the at least one circle of first isolation structures is located in the isolation area between the at least one circle of blocking walls and the opening area; the at least one circle of second isolation structures is located between the at least one circle of blocking walls and the opening area. the isolation area between the display areas;
- the light-emitting functional layer at the second isolation structure and the light-emitting functional layer between the second isolation structure disconnect.
- the first protective layer in the isolation region between the at least one ring of blocking walls and the opening region, is in the isolation region. There is an opening at or between the first isolation structures;
- the first inorganic package In the isolation area between the at least one ring of blocking walls and the display area, the first inorganic package has an opening at the second isolation structure or between the second isolation structures.
- the isolation layer is a first inorganic insulating layer, the first isolation structure is a first isolation trench, and the second isolation structure is a second isolation layer. isolation tank;
- the first protective layer has an opening corresponding to the first isolation groove
- the first inorganic encapsulation layer has an opening corresponding to the second isolation groove
- the isolation layer is a source-drain metal layer
- the first isolation structure is a first isolation column
- the second isolation structure is a second isolation column
- the first protective layer is in direct contact with the second inorganic encapsulation layer at the first isolation pillars, and the first protective layer has openings between the first isolation pillars, the first inorganic encapsulation layer The encapsulation layer has openings between the corresponding second isolation pillars.
- the source-drain metal layer includes a first metal layer, a second metal layer, and a third metal layer that are stacked and arranged;
- Both the first isolation pillar and the second isolation pillar include: a first isolation part located in the first metal layer, a second isolation part located in the second metal layer, and a third metal layer The third isolation portion; wherein, the orthographic projection of the first isolation portion on the base substrate is greater than the orthographic projection of the second isolation portion on the base substrate, and is substantially equal to the first isolation portion The orthographic projection of the part on the base substrate.
- a bridge layer located on a side of the second protective layer away from the base substrate includes a floating electrode, the floating electrode
- the orthographic projection of the electrode on the base substrate covers at least part of the orthographic projection of the second isolation structure on the base substrate.
- the floating electrode has a closed-loop shape, and the orthographic projection of the floating electrode on the base substrate completely covers the at least one circle an orthographic projection of the second isolation structure on the base substrate.
- the above-mentioned display substrate provided by the embodiments of the present disclosure further includes: an etching barrier layer located on the side of the base substrate facing the at least one circle of barrier walls, and the etching barrier layer in direct contact with the base substrate;
- the materials of the first protective layer and the second protective layer are the same as those of the etch stop layer.
- the distance between the surface of the filling layer facing away from the base substrate and the base substrate is greater than the distance between the encapsulation layer facing away from the base substrate The distance between the surface and the base substrate.
- the above-mentioned display substrate provided by the embodiments of the present disclosure further includes: a second inorganic insulating layer and a touch electrode layer sequentially located on the side of the bridging layer away from the base substrate; wherein,
- the bridging layer further includes a plurality of bridging electrodes located in the display area;
- the touch electrode layer includes a plurality of first touch electrodes extending along a first direction in the display area, and a plurality of second touch electrodes extending along a second direction, and the plurality of second touch electrodes
- the electrodes or the plurality of first touch electrodes and the plurality of bridge electrodes are electrically connected through openings passing through the second inorganic insulating layer, and the first direction and the second direction intersect each other.
- the above-mentioned display substrate provided by the embodiments of the present disclosure further includes: a third protective layer on the side of the touch electrode layer away from the base substrate, the third protective layer is located on the side of the touch electrode layer away from the base substrate. the display area and the isolation area.
- an embodiment of the present disclosure provides a display device, including the above-mentioned display substrate, and a light extraction module; wherein, the light extraction module is installed in an opening area of the display substrate.
- an embodiment of the present disclosure provides a method for fabricating the above-mentioned display substrate, including:
- a base substrate is provided, the base substrate includes an opening area, a display area located around the opening area, and an isolation area located between the display area and the opening area; wherein the opening area The hole area is configured to install the light extraction module;
- At least one circle of blocking walls is formed on the base substrate, and the at least one circle of blocking walls is arranged around the opening area in the isolation area;
- first protective layer on the encapsulation layer, the first protective layer at least completely covering the at least one circle of barrier walls;
- a filling layer is formed on the first protective layer, the filling layer is located in the isolation region, and the filling layer completely covers the at least one circle of barrier walls and at least partially overlaps with the encapsulation layer.
- the method while forming at least one circle of blocking walls on the base substrate, the method further includes: forming at least one circle of blocking dams in the opening area.
- a first inorganic encapsulation layer, an organic encapsulation layer, and a second inorganic encapsulation layer are sequentially formed on the layer where the at least one circle of barrier walls is located; wherein, the first inorganic encapsulation layer is formed at least between the at least one circle of barrier walls and the The isolation area between the display areas has an opening, and the second inorganic encapsulation layer has an opening in the isolation area between the at least one ring of blocking walls and the opening area;
- the organic encapsulation layer While forming the organic encapsulation layer, it also includes:
- a reinforcing pad is formed in the opening area, and the reinforcing pad is located on a side of the at least one ring of blocking dams away from the isolation area.
- forming a first protective layer on the encapsulation layer specifically includes:
- the inorganic material layer is patterned to form a first protective layer, the first protective layer only has openings in the isolation region, and in the isolation region, the openings of the first protective layer and the second inorganic layer conduction between the openings of the encapsulation layer.
- the method further includes: forming a second protective layer provided on the entire surface on the filling layer.
- the method further includes:
- each film layer in the opening area is removed, so that the opening area forms a through hole passing through the display substrate; each film layer in the opening area at least includes the base substrate , the at least one ring barrier dam, the light-emitting functional layer, the second inorganic encapsulation layer, the reinforcing pad, the first protective layer, the filling layer and the second protective layer.
- FIG. 1 is a schematic structural diagram of a display substrate provided by an embodiment of the present disclosure
- Fig. 2 is a kind of sectional structure schematic diagram along line I-II in Fig. 1;
- Fig. 3 is another kind of cross-sectional structure schematic diagram along line I-II in Fig. 1;
- Fig. 4 is another kind of cross-sectional structure schematic diagram along line I-II in Fig. 1;
- Fig. 5 is another kind of cross-sectional structure schematic diagram along line I-II in Fig. 1;
- FIG. 6 is a schematic structural diagram of a display substrate in an area where a second barrier wall is located according to an embodiment of the present disclosure
- FIG. 7 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
- FIG. 8 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
- Fig. 9 is a schematic cross-sectional structure along line III-IV in Fig. 1;
- FIG. 10 is another schematic structural diagram of a display substrate provided by an embodiment of the present disclosure.
- FIG. 11 to FIG. 30 are respectively schematic structural diagrams of the display substrate shown in FIG. 2 during the manufacturing process.
- the film layer in the aperture area is relatively weak compared with other display areas, the strength of the aperture area is poor, and cracks are prone to occur, resulting in poor display due to package failure, affecting user usage. Therefore, it is urgent to improve the hole strength to improve the yield of products using the display area opening technology.
- a layer of filling layer (OCB) in the opening area can effectively relieve the damage of stress and external force to the opening position, thereby improving the hole strength.
- a Flexible Multi-Layer On Cell (FMLOC) process is performed to realize the fabrication of the touch functional layer (TSP).
- TSP touch functional layer
- the occurrence rate of reliable detection of poor touch was 100%.
- the manufacturing process of the filling layer includes wet processes such as water washing and development. During this process, the water absorption of the organic layer produced by the previous process increases. In the high temperature reliability test, the evaporation of the organic layer causes the touch function layer to peel off. (Peeling) and cause poor touch control.
- an embodiment of the present disclosure provides a display substrate, as shown in FIG. 1 to FIG. 5 , which may include:
- a base substrate 101 the base substrate 101 has an opening area HA, a display area AA located around the opening area HA, and an isolation area QA located between the display area AA and the opening area HA; wherein the opening area HA is configured to install a light extraction module;
- At least one circle of blocking walls 102 is arranged around the opening area HA in the isolation area QA;
- the encapsulation layer 103 is located on the side of the layer where the barrier wall 102 is located away from the base substrate 101, and the orthographic projection of the encapsulation layer 103 on the base substrate 101 completely covers the display area AA;
- the first protective layer 104 is located on the side of the encapsulation layer 103 away from the base substrate 101 , and the first protective layer 104 at least completely covers all the blocking walls 102 ;
- the filling layer 105 is located on the side of the first protective layer 104 away from the base substrate 101 , and is located in the isolation region QA, wherein the filling layer 105 completely covers the barrier wall 102 and at least partially overlaps the encapsulation layer 103 .
- the filling layer 105 may be an organic material such as insulating glue (OCB).
- the first protective layer 104 completely covers the organic layer where the barrier wall 102 is located, so that the During the process of fabricating the filling layer 105 , the barrier wall 102 cannot be exposed to moisture due to the isolation of the first protective layer 104 , thus preventing poor touch control caused by water absorption by the organic layer where the barrier wall 102 is located.
- the encapsulation layer 103 may include an organic encapsulation layer b.
- the layer b includes a first organic encapsulation part b 1 located in the display area AA and a second organic encapsulation part b 2 located in the isolation area QA.
- the thickness h' in the direction 103 of the base substrate gradually decreases.
- the second organic encapsulation portion b 2 covers the second barrier wall D 2 , the maximum width of the second barrier wall D 2 in the direction away from the display area AA is A , the maximum width of the covering portion of the second organic encapsulation portion b 2 covering the second barrier wall D 2 in the direction away from the display area AA is B, and B ⁇ 0.85A.
- the filling layer 105 in order to facilitate maintaining the shape of the opening area HA, as shown in FIG. 6 , the filling layer 105 has a section on the part covering the second barrier wall D2 For the portion m with constant thickness, the thickness of the portion with constant thickness in the direction perpendicular to the base substrate 101 is C.
- the filling layer 105 starts from a portion m with a constant thickness, and along the direction away from the display area AA, the thickness gradually increases to D, and the ratio of D to C is between 2.5-3.
- the display substrate in order to avoid damage to the filling layer 105 caused by the fabrication of subsequent film layers (eg, bridge layers), as shown in FIG. 2 and FIG. 6 , it may further include: The second protective layer 106 located on the side of the filling layer 105 away from the base substrate 101, the second protective layer 106 at least completely covers the filling layer 105, and the second protective layer 106 is on the filling layer 105, from the side close to the display area AA On the far side, it is gradually inclined in the direction of approaching the base substrate 101 . In some embodiments, the slope of the inclination of the second protective layer 106 is between 0.01-0.02.
- the inventors found that metal particles are precipitated in the front-end process before the filling layer 105, and the filling layer 105 has high adhesion to the metal particles and cannot be fully developed, resulting in the filling layer 105 remaining. In the high temperature reliability test, the residual filling layer 105 expands, which may also lead to peeling of the touch functional layer and cause poor touch control.
- the first protective layer 104 may further include a film layer covering at least part of the display area AA, and has a corresponding opening area HA (ie, the first protective layer 104 corresponding to the opening area HA is removed).
- the first protective layer 104 covering at least part of the display area AA separates the filling layer 105 from the metal particles of the lower film layer, so that the development process of the filling layer 105 can be fully carried out, thereby avoiding the filling layer 105 remaining, and solving the problem of filling The problem of poor touch control caused by residual expansion of the layer 105 .
- the first opening of the first protective layer 104 in the opening area HA can increase the light transmittance of the opening area HA.
- the second protective layer 106 may further include a film layer covering at least part of the display area AA, and having corresponding openings The second opening of the hole area HA (ie, the second protective layer 106 corresponding to the hole area HA is removed).
- the second protective layer 106 covers part or all of the display area AA, so as to avoid damage to the encapsulation layer 103 caused by the fabrication of subsequent film layers (eg, bridge layers).
- the second opening of the second protective layer 106 in the opening area HA can increase the light transmittance of the opening area HA.
- the first opening of the first protective layer 104 in the opening area HA may overlap with the second opening of the second protective layer 106 in the opening area HA, so as to increase the light transmittance of the opening area HA.
- the first protective layer 104 and the second protective layer 106 are in direct contact at least in the display area AA.
- the first protective layer 104 and the second protective layer 106 arranged in this way can, on the one hand, be used to carry the touch function layer formed in the display area AA later, and on the other hand, can avoid the touch function layer in the process of forming the touch function layer. damage to the encapsulation layer 103, thereby ensuring a good encapsulation effect.
- the first protective layer 104 and the second protective layer 106 may also be directly in the isolation area adjacent to the display area AA. touch. In this way, the first protective layer 104, the second protective layer 106 and the filling layer 105 can form a sandwich structure in the isolation area QA, and the sandwich structure has a good wrapping effect on the filling layer 105 on the side adjacent to the display area AA.
- the second protective layer 106 in the above-mentioned display substrate provided by the embodiments of the present disclosure, in the direction perpendicular to the base substrate 101 , the second protective layer 106 may have the same thickness and the same material as the first protective layer 104 , so that The production of the first protective layer 104 and the second protective layer 106 can be achieved respectively by using the same process parameters, which simplifies the production process.
- the thicknesses of the first protective layer 104 and the second protective layer 106 may also be different, which may be flexibly set according to actual needs, which is not limited herein.
- the thickness of the second protective layer 106 in a direction perpendicular to the base substrate 101 , the thickness of the second protective layer 106 may be greater than 600 ⁇ m.
- the maximum damage (Loss) to the second protective layer 106 is 600 ⁇ m. Therefore, by setting the thickness of the second protective layer 106 to be greater than 600 ⁇ m, the filling layer 105 can be effectively avoided. produce damage.
- the sum of the thicknesses of the first protective layer 104 and the second protective layer 106 may be about 2000 ⁇ m.
- the encapsulation layer 103 may include an organic encapsulation layer b and at least A first inorganic encapsulation layer a between a circle of barrier walls 102 , and a second inorganic encapsulation layer c located between the organic encapsulation layer b and the first protective layer 104 ; wherein the first inorganic encapsulation layer a is on the base substrate 101 and the orthographic projection of the second inorganic encapsulation layer c on the base substrate 101 approximately coincides, and the second inorganic encapsulation layer c covers the organic encapsulation layer b.
- the orthographic projection of the first inorganic encapsulation layer a on the base substrate 101 and the orthographic projection of the second inorganic encapsulation layer c on the base substrate 101 may be Completely overlapping, that is, the orthographic projections of the first inorganic encapsulation layer a and the second inorganic encapsulation layer c on the base substrate 101 are both located in the display area AA and the isolation area QA; or, the second inorganic encapsulation layer c is on the base substrate 101
- the orthographic projection of the first inorganic encapsulation layer a is slightly larger than the orthographic projection of the first inorganic encapsulation layer a on the base substrate 101.
- the orthographic projection of the second inorganic encapsulation layer c on the base substrate 101 is located in the display The area AA and the isolation area QA, the orthographic projection of the first inorganic encapsulation layer a on the base substrate 101 is located in the display area AA, and the isolation area QA between the barrier wall 102 and the display area AA.
- the second inorganic encapsulation layer c is in direct contact with the first protective layer 104 at least in the isolation region QA. 2 to 5 specifically show that the second inorganic encapsulation layer c is in direct contact with the first protective layer 104 in both the display area AA and the isolation area QA.
- the first protective layer 104 protects the encapsulation layer 103 from damage, thereby ensuring a good encapsulation effect.
- the second inorganic encapsulation layer c may further include a film layer covering at least part of the display area AA, and having a film corresponding to The third opening of the opening area HA is used to improve the light transmittance of the opening area HA.
- the first opening of the first protective layer 104 in the opening area HA coincides with the third opening of the second inorganic encapsulation layer c in the opening area HA, so as to increase the light transmittance of the opening area HA.
- the first opening of the first protective layer 104 in the opening area HA may coincide with the fourth opening of the filling layer 105 in the opening area HA.
- the at least one circle of barrier walls 102 may include: a first circle adjacent to the display area AA and sequentially arranged in the isolation area QA. A barrier wall D 1 and a second barrier wall D 2 .
- the first barrier wall D1 and the second barrier wall D2 can prevent the organic encapsulation layer b of the display area AA from passing over the second barrier wall D2, thereby ensuring that water vapor does not extend to the display area AA along the organic encapsulation layer b.
- the at least one circle of barrier walls 102 may also include only the first barrier wall D 1 .
- a first barrier wall D1 may be provided to the display area AA.
- the distance is smaller than the distance from the first blocking wall D1 to the opening area HA.
- the above-mentioned display substrate provided by the embodiments of the present disclosure may further include a light-emitting functional layer 108 located between the layer where the barrier wall 102 is located and the first inorganic encapsulation layer a ;
- the light-emitting functional layer 108 has an opening corresponding to the opening area HA, which greatly improves the light transmittance of the opening area HA, which is beneficial to improve the imaging effect.
- the light emitting functional layer 108 may include, but is not limited to, a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting material layer, a hole blocking layer, an electron transport layer, and an electron injection layer.
- the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: an isolation layer 109 located between the base substrate 101 and the layer where the barrier wall 102 is located.
- the layer 109 includes at least one circle of the first isolation structure H 1 and/or at least one circle of the second isolation structure H 2 ; wherein all the first isolation structures H 1 are located in the isolation between the first barrier wall D 1 and the opening area HA area QA; all of the second isolation structures H 2 are located in the isolation area QA between the second barrier wall D 2 and the display area AA;
- the light-emitting functional layer 108 at the first isolation structure H1 and the light-emitting functional layer 108 between the first isolation structure H1 are disconnected;
- the light emitting functional layer 108 at the second isolation structure H 2 is disconnected from the light emitting functional layer 108 between the second isolation structure H 2 .
- first isolation structure H1 and the second isolation structure H2 can block the film layer of the light emitting functional layer 108, water vapor can be effectively prevented from entering the display area AA along the light emitting functional layer 108 to affect the display effect.
- the first protection The layer 104 has openings at or between the first isolation structures H1 ; in the isolation area QA between the second barrier wall D1 and the display area AA, the first inorganic package a is in the second isolation There is an opening at the structure H2 or between the second isolation structures H2 .
- FIG. 2 and FIG. 5 in the isolation area QA between the first barrier wall D1 and the opening area HA, the first protection The layer 104 has openings at or between the first isolation structures H1 ; in the isolation area QA between the second barrier wall D1 and the display area AA, the first inorganic package a is in the second isolation There is an opening at the structure H2 or between the second isolation structures H2 .
- the isolation layer 109 may be a first inorganic insulating layer, the first isolation structure H1 is a first isolation trench, and the second isolation structure H1 is a second isolation trench;
- the first protective layer 104 has openings at the first isolation trenches (ie, the first isolation structures H 1 ), and the first inorganic encapsulation layer a has openings corresponding to the second isolation trenches (ie, the second isolation structures H 2 ).
- the first inorganic encapsulation layer a has openings at the second isolation trenches (ie, the second isolation structures H 2 ), and is in direct contact with the light emitting functional layer 108 between the second isolation trenches (ie, the second isolation structures H 2 ).
- the filling layer 105 can be embedded in the first isolation trenches (ie, the first isolation structures H 1 ) through the openings, As a result, the adhesion of the filling layer 105 is increased, and the effect of improving the strength of the filling layer 105 on the opening area HA and the stress on the opening area HA are effectively relieved.
- the organic encapsulation layer b can be embedded in the second isolation trenches (ie the second isolation structures H 1 ) through the openings ), thereby increasing the adhesion of the organic encapsulation layer b and ensuring the encapsulation effect of the organic encapsulation layer b on the display area AA.
- the first isolation trench (ie, the first isolation structure H 1 ) and the second isolation trench (ie, the second isolation structure H 2 ) may be through holes penetrating the first inorganic insulating layer (ie, the isolation layer 109 ). , or blind holes that do not penetrate the first inorganic insulating layer (ie, the isolation layer 109 ).
- the first isolation trench (ie, the first isolation structure H 1 ) and the second isolation trench (ie, the second isolation structure H 2 ) are shown as penetrating the first inorganic insulating layer (ie, the isolation layer 109 ) The structure diagram of the through hole.
- a first isolation trench (ie, isolation trench) may also be provided in the base substrate 101 under the first inorganic insulating layer (ie, the isolation layer 109 ). That is, the first isolation structure H 1 ) and the second isolation trench (that is, the second isolation structure H 2 ) are vertically facing blind holes.
- the first inorganic insulating layer 109 ′ may include: an active layer and a gate electrode of the transistor TFT (disposed in the same layer as the first electrode of the storage capacitor)
- the gate insulating layer e between, the first interlayer dielectric layer f between the gate of the transistor TFT and the second electrode of the storage capacitor Cst and the second electrode of the storage capacitor Cst and the source/drain of the transistor TFT
- the second interlayer dielectric layer g between them.
- the first inorganic insulating layer 109 ′ may also include a direct contact with the base substrate 101 . Etch stop layer 110 in contact.
- the isolation layer 109 may be a source-drain metal layer, and the first isolation structure H 1 is a first isolation column, so The second isolation structure H 2 is a second isolation column;
- the first protective layer 104 is in direct contact with the second inorganic encapsulation layer c at the first isolation pillar (ie, the first isolation structure H 1 ), and the first protection layer 104 is in direct contact with the first isolation pillar (ie, the first isolation structure H 1 ). There are openings therebetween, and the first inorganic encapsulation layer b has openings between the second isolation pillars (ie, the second isolation structures H 2 ).
- the area between the first isolation pillars (ie, the first isolation structure H 1 ) is equivalent to a groove. Therefore, openings opposite to the grooves are provided in the first protective layer 104 , so that the filling layer 105 can be embedded in the first protective layer 104 through the openings.
- the grooves between the isolation pillars ie, the first isolation structures H 1 ), thereby increasing the adhesion of the filling layer 105 , ensuring the effect of improving the strength of the filling layer 105 on the opening area HA and the effect on the opening area Effective relief of stress on HA.
- the organic encapsulation layer b can be embedded in the second isolation pillars (ie the second isolation structures H 2 ) through the openings
- the groove between the two isolation structures H 2 increases the adhesion of the organic encapsulation layer b and ensures the encapsulation effect of the organic encapsulation layer b on the display area AA.
- the source/drain metal layer may include a first metal layer (eg, a titanium Ti metal layer), a second metal layer (eg, an aluminum Al metal layer), and a third metal layer (eg, a titanium Ti metal layer) that are stacked.
- a first metal layer eg, a titanium Ti metal layer
- a second metal layer eg, an aluminum Al metal layer
- a third metal layer eg, a titanium Ti metal layer
- Both the first isolation column (ie the first isolation structure H 1 ) and the second isolation column (ie the second isolation structure H 2 ) may include: a first isolation part located in the first metal layer, a first isolation part located in the second metal layer Two isolation parts, and a third isolation part located in the third metal layer; wherein, the orthographic projection of the first isolation part on the base substrate is greater than the orthographic projection of the second isolation part on the base substrate, and is approximately equal to the first isolation part
- the orthographic projection of the part on the base substrate makes each isolation column have an "I" shape, so as to improve the isolation effect on the light-emitting functional layer 108 .
- the first isolation column (ie, the first isolation structure H 1 ) and the second isolation column (ie, the second isolation structure H 2 ) may also have other shapes (eg, a trapezoid with a wide upper part and a narrow lower part). No specific limitation is made.
- the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: a bridging layer on the side of the second protective layer 106 away from the base substrate 101 , the bridging layer The floating electrode 111 is included, and the orthographic projection of the floating electrode 111 on the base substrate 101 covers at least part of the orthographic projection of the second isolation structure H 2 on the base substrate 101 .
- the floating electrode 111 can cover the encapsulation layer 103 at the second isolation structure H 2 to prevent the encapsulation layer 103 from falling off; at the same time, the floating electrode 111 is used to cover the trench area of the barrier wall 102 to improve the flatness here and prevent the
- the second insulating layer (TLD) 112 is wrinkled and broken here; in addition, the floating electrode 111 can also block the emission light of the light emitting device 102 in the display area AA from irradiating the opening area HA, so as to avoid the influence of the emission light of the light emitting device 102 camera.
- the floating electrode 111 has a closed-loop shape, and the orthographic projection of the floating electrode 111 on the base substrate 101 completely covers the entire second isolation structure H 2 on the substrate Orthographic projection on substrate 101 .
- the material of the first protective layer 104 and the second protective layer 106 is the same as the material of the etch stop layer 110 .
- the materials of the first protective layer 104 , the second protective layer 106 and the etch stop layer 110 may be silicon nitride, silicon oxide, silicon oxynitride, or the like.
- the distance between the surface of the filling layer 105 away from the base substrate 101 and the base substrate 101 is greater than the distance between the encapsulation layer 103 away from the base substrate 101 The distance between the surface and the base substrate 101 .
- the film layer around the opening area HA can be thicker, which is favorable for maintaining the shape of the opening area HA.
- the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: a second inorganic insulating layer 112 sequentially located on the side of the bridge layer 111 away from the base substrate 101 .
- the bridge layer 111 further includes a plurality of bridge electrodes 111' located in the display area AA;
- the touch electrode layer 113 includes a plurality of first touch electrodes extending along the first direction Y in the display area AA 1131, and a plurality of second touch electrodes 1132 extending along the second direction X, the first touch electrodes 1131 and the second touch electrodes 1132 have a grid shape, and the plurality of second touch electrodes 1132 or the first touch electrodes 1132
- the control electrode 1131 and the plurality of bridge electrodes 111 ′ are electrically connected through openings passing through the second inorganic insulating layer 112 , and the first direction Y and the second direction X cross each other. In this way, there is no need for an external touch control module (TSP), so that the thickness of the screen can be reduced, which is conducive to folding; at the same time, there is no fit tolerance, which can reduce the width of the frame.
- TSP external touch control module
- a plurality of signal lines T x and R x electrically connected to the touch electrode layer 113 may be arranged in the frame area BB around the display area AA.
- the signal lines Tx and Rx can be double-layered on the bridge layer 111 and the touch electrode layer 113 respectively, and the double-layered wiring of the same signal line Tx or Rx can pass through the second inorganic insulation The openings of layer 112 are electrically connected.
- the resistance of the signal lines T x and R x of the double-layer wiring design is relatively small, which greatly reduces the signal delay (RC delay).
- the above-mentioned display substrate provided by the embodiments of the present disclosure may further include: a third touch electrode layer 113 on a side away from the base substrate 101 .
- the protective layer 114, the third protective layer 114 is located in the display area AA and the isolation area QA.
- the third protective layer 114 inside the dotted line M ie, the side away from the display area AA
- the material of the third protective layer 114 may be OC insulating glue.
- the above-mentioned display substrate provided by the embodiment of the present disclosure may further include: a flat layer 102 ′, a pixel defining layer 115 , a supporting layer 116 , an anode 117 , a cathode 118 , and a signal line T x
- the flexible circuit board FPC that is bound and connected to R x
- the driver chip IC that is bound and connected to signal lines such as data lines of the display area AA.
- the barrier wall 102 may be made of the same layer and material as at least one of the planarization layer 102 ′, the pixel defining layer 115 , and the support layer 116 .
- the light-emitting device is of the top emission type
- the transistor TFT is of the top gate type as an example for description.
- the light emitting device may also be of bottom emission type
- the transistor TFT may also be of bottom gate type, which is not limited herein.
- a base substrate is provided, the base substrate includes an opening area, a display area located around the opening area, and an isolation area located between the display area and the opening area; wherein the opening area is configured to install a light extraction mode Group;
- At least one circle of blocking walls is formed on the base substrate, and at least one circle of blocking walls is arranged around the opening area in the isolation area;
- An encapsulation layer is formed on the layer where at least one circle of barrier walls is located, and the orthographic projection of the encapsulation layer on the base substrate completely covers the display area;
- a first protective layer is formed on the encapsulation layer, and the first protective layer at least completely covers at least one barrier wall;
- a filling layer is formed on the first protective layer, the filling layer is located in the isolation region, the filling layer completely covers the at least one circle of barrier walls and at least partially overlaps with the encapsulation layer.
- the manufacturing process is as follows:
- the active layer and gate of the TFT included in the pixel driving circuit, the first and second electrodes of the storage capacitor Cst, and the etching barrier layer are formed on the base substrate 101 110.
- the AA has a contact hole, and the contact hole is used to realize the electrical connection between the active layer and the source/drain of the transistor TFT.
- the base substrate 101 is provided with blind vias that are vertically opposite to the first isolation trench (ie, the first isolation structure H 1 ) and the second isolation trench (ie, the second isolation structure H 2 ).
- the source/drain of the transistor TFT, the flat layer 102 ′, the first barrier wall D 1 , and the second barrier are formed wall D 2 , the first blocking dam D 3 and the second blocking dam D 4 ; wherein the first blocking wall D 1 and the second blocking wall D 2 constitute the blocking wall 102 located in the isolation area QA, and the first blocking dam D 3 and the second blocking dam D 4 constitute the blocking dam 119 located in the opening area HA; and the first blocking wall D 1 , the second blocking wall D 2 , the first blocking dam D 3 and the second blocking dam D 4 may be combined with
- the flat layer 102' is made of the same layer and the same material.
- the first barrier wall D 1 and the second barrier wall D 2 can prevent the organic encapsulation layer b formed in the display area AA from passing over the first barrier wall D 1 , thereby ensuring an excellent encapsulation effect. Subsequently, a reinforcement pad 107 of the same material as the organic encapsulation layer b will be formed at the center of the opening area HA, and the first barrier dam D3 and the second barrier dam D4 can prevent the reinforcement pad 107 from overflowing over the second barrier dam D4 To the isolation area QA, the water vapor is effectively prevented from extending to the display area AA along the overflowing reinforcement pad 107 material.
- the bonding area BD of the driver chip IC has a data line SD of the same layer and the same material as the source/drain of the transistor TFT, and there is a flat surface made of organic material between the adjacent data lines SD. layer 102 ′, so that the insulation between adjacent data lines SD is achieved by the flat layer 102 ′.
- the thickness of the first barrier dam D 3 is smaller than the thickness of the second barrier dam D 4 . 3 points in the direction of the second blocking dam D 4 , forming a low-to-high dam, thereby increasing the blocking effect on the reinforcing pad 107 .
- the thickness of the first barrier dam D3 may be equal to the thickness of the second barrier dam D4 .
- the thickness of the first blocking wall D1 is greater than the thickness of the second blocking wall D2, thereby forming a low-to-high embankment in the direction from the second blocking wall D2 to the first blocking wall D1.
- the blocking effect on the organic encapsulation layer b is increased.
- the thickness of the first barrier wall D1 may be equal to the thickness of the second barrier dam D4 .
- an anode 117 , a pixel defining layer 115 , a light-emitting functional layer 108 , a spacer layer 116 and a cathode 118 are formed on the flat layer 102 ′, and the light-emitting functional layer 108 is fabricated
- the light-emitting functional layer 108 in the hole area HA is excavated, and the light-emitting functional layer 108 is removed due to the existence of the first isolation trench (ie, the first isolation structure H 1 ) and the second isolation trench (ie, the second isolation structure H 2 ).
- the fracture occurs at the first isolation trench (ie, the first isolation structure H 1 ) and the second isolation trench (ie, the second isolation structure H 2 ).
- a first inorganic encapsulation layer a, an organic encapsulation layer b and a second inorganic encapsulation layer c are sequentially formed on the cathode 118 , and an organic encapsulation layer b is formed in the opening area HA. Reinforcing pads 107 of the same layer and material.
- the first inorganic encapsulation layer a, the organic encapsulation layer b and the second inorganic encapsulation layer c are stacked to form the encapsulation layer 103 , and the first inorganic encapsulation layer a is located between the display area AA, and the second barrier wall D2 and the display area AA
- the isolation area QA, the second inorganic encapsulation layer c is located in the display area AA, the isolation area QA and the opening area HA; and the first inorganic encapsulation layer a has an opening at the second isolation trench (ie the second isolation structure H 2 ),
- the second inorganic encapsulation layer c has openings at the first isolation trenches (ie, the first isolation structures H 1 ).
- the reinforcing pad 107 is configured to reduce the film layer difference between the display area AA and the via area HA during the process, and prevent the subsequent touch function layer from peeling off (peeling).
- the fifth step as shown in FIG. 20 to FIG. 22 , an inorganic material layer is formed on the entire surface of the encapsulation layer 103, and the inorganic material layer is patterned to form a first protective layer 104.
- the first protective layer 104 only has openings in the isolation area QA , and in the isolation region QA, the opening of the first protective layer 104 and the opening of the second inorganic encapsulation layer are conductive, and the opening of the first protective layer 104 is connected to the first isolation trench (ie, the first isolation structure H 1 ) Right to the setting. And it can be seen from FIG.
- the first protective layer 104 completely covers the binding area BD, so that the The flat layer 102 ′ in the bonding area BD is isolated from the filling layer 105 to be fabricated later, so as to avoid the flat layer 102 ′ absorbing water vapor during the process of fabricating the filling layer 105 , thereby avoiding the high temperature condition of the reliability test.
- the water vapor evaporates under it, causing the subsequent touch layer to fall off.
- an organic insulating layer 105 ′ is formed on the entire surface of the first protective layer 104 , and the organic insulating layer 105 ′ is patterned to form a filling layer 105 , and the filling layer 105 is located in the opening area HA and Quarantine QA.
- a second protective layer 106 is formed on the filling layer 105 on the entire surface.
- a through opening is formed in the first protective layer 104 and the second protective layer 106 above the data line SD to expose the data line SD, so as to facilitate the subsequent binding of the data line SD and the driver chip IC connect.
- a bridge layer, a second inorganic insulating layer 112 , a touch electrode layer 113 and a third protective layer 114 provided on the entire surface are sequentially formed on the second protective layer 106 ; wherein, the bridge layer includes a plurality of bridge electrodes 111 ′ located in the display area AA, and a floating electrode 111 covering the second isolation trench (ie, the second isolation structure H 2 ); the touch electrode layer 113 is included along the display area AA A plurality of first touch electrodes 1131 extending in the first direction Y, a plurality of second touch electrodes 1132 extending in the second direction X, and a plurality of second touch electrodes 1132 or a plurality of first touch electrodes 1131
- the plurality of bridge electrodes 111 ′ are electrically connected through openings penetrating the second inorganic insulating layer 112 , and the first direction Y and the second direction X cross each other.
- a plurality of signal lines T x and R x electrically connected to the touch electrode layer 113 are disposed in the frame area BB around the display area AA.
- the signal lines Tx and Rx are double-layered on the bridge layer 111 and the touch electrode layer 113 respectively, and the double-layered wirings of the same signal line Tx or Rx are electrically connected through openings through the second inorganic insulating layer 112 .
- the present disclosure also provides a display device, including the above-mentioned display substrate provided by the embodiment of the present disclosure, and a light extraction module; wherein the light extraction module is installed in the opening area of the display substrate.
- the display substrate may be an OLED display substrate
- the light extraction module may be a camera module. Since the principle of solving the problem of the display device is similar to the principle of solving the problem of the above-mentioned display substrate, the implementation of the display device may refer to the embodiment of the above-mentioned display substrate, and the repetition will not be repeated.
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Abstract
Description
Claims (40)
- 一种显示基板,其中,包括:衬底基板,所述衬底基板包括开孔区、位于所述开孔区周围的显示区、以及位于所述显示区与所述开孔区之间的隔离区;其中,所述开孔区被配置为安装取光模组;至少一圈阻挡墙,在所述隔离区内环绕所述开孔区设置;封装层,位于所述阻挡墙所在层背离所述衬底基板的一侧,且所述封装层在所述衬底基板上的正投影完全覆盖所述显示区;第一保护层,位于所述封装层背离所述衬底基板的一侧,且所述第一保护层至少完全覆盖所述至少一圈阻挡墙;填充层,位于所述第一保护层背离所述衬底基板的一侧,且所述填充层位于所述隔离区,所述填充层完全覆盖所述至少一圈阻挡墙且与所述封装层至少部分重叠。
- 如权利要求1所述的显示基板,其中,所述封装层包括有机封装层,所述有机封装层包括位于所述显示区的第一有机封装部分和位于隔离区的第二有机封装部分,所述第一有机封装部分在垂直于衬底基板方向上的厚度h满足下述公式:h=0.017x+4.5(x≤441微米);h=12微米(x>441微米),其中,x为测量位置距离参考点的距离,所述参考点为所述至少一圈阻挡墙中的最靠近所述显示区一侧的点;所述第二有机封装部分完全被所述填充层覆盖,且所述第二有机封装部分从靠近所述显示区的一侧到远离的方向上,在垂直于所述衬底基板方向上的厚度逐渐变小。
- 如权利要求2所述的显示基板,其中,所述至少一圈阻挡墙包括靠近所述显示区的第二阻挡墙和远离所述显示区的第一阻挡墙,所述第二有机封装部分覆盖所述第二阻挡墙,所述第二阻挡墙在远离所述显示区方向上的最大宽度为A,所述第二有机封装部分覆盖所述第二阻挡墙的覆盖部分在远离所述显示区方向上的最大宽度为B,B≤0.85A。
- 如权利要求3所述的显示基板,其中,所述填充层在覆盖所述第二阻挡墙的部分上存在一段厚度不变的部分,所述厚度不变部分在垂直于所述衬底基板方向上的厚度为C。
- 如权利要求3所述的显示基板,其中,所述填充层从所述厚度不变的部分开始,沿着远离所述显示区的方向上,厚度逐级变大为D,所述D与所述C的比值在2.5-3之间。
- 如权利要求1所述的显示基板,其中,还包括:位于所述填充层背离所述衬底基板一侧的第二保护层,所述第二保护层至少完全覆盖所述填充层,且所述第二保护层在所述填充层上,从靠近所述显示区的一侧到远离的一侧,逐渐向靠近所述衬底基板的方向上倾斜。
- 如权利要求6所述的显示基板,其中,所述第二保护层倾斜的斜率在0.01-0.02之间。
- 如权利要求6所述的显示基板,其中,所述第一保护层还包括至少覆盖部分所述显示区的膜层,且具有对应于所述开孔区的第一开口。
- 如权利要求8所述的显示基板,其中,所述第二保护层还包括至少覆盖部分所述显示区的膜层,且具有对应于所述开孔区的第二开口。
- 如权利要求9所述的显示基板,其中,所述第一开口和所述第二开口重合。
- 如权利要求6-10任一项所述的显示基板,其中,所述第一保护层和所述第二保护层至少在所述显示区内直接接触。
- 如权利要求6-11任一项所述的显示基板,其中,所述第一保护层和所述第二保护层还在邻近所述显示区的所述隔离区内直接接触。
- 如权利要求6-12任一项所述的显示基板,其中,所述第二保护层与所述第一保护层的材料相同。
- 如权利要求6-13任一项所述的显示基板,其中,在垂直于所述衬底基板的方向上,所述第二保护层的厚度大于600μm。
- 如权利要求8-14任一项所述的显示基板,其中,所述封装层还包括 位于所述有机封装层与所述至少一圈阻挡墙之间的第一无机封装层、以及位于所述有机封装层与所述第一保护层之间的第二无机封装层;其中,所述第一无机封装层在所述衬底基板上的正投影与所述第二无机封装层在所述衬底基板上的正投影大致重合,且所述第二无机封装层包覆所述有机封装层。
- 如权利要求15所述的显示基板,其中,所述第二无机封装层至少在所述隔离区与所述第一保护层直接接触。
- 如权利要求15所述的显示基板,其中,所述第二无机封装层还包括至少覆盖部分所述显示区的膜层,且具有对应于所述开孔区的第三开口。
- 如权利要求17所述的显示基板,其中,所述第一开口和所述第三开口重合。
- 如权利要求8-18任一所述的显示基板,其中,所述填充层具有对应于所述开孔区的第四开口。
- 如权利要求19所述的显示基板,其中,所述第一开口和所述第四开口重合。
- 如权利要求3所述的显示基板,其中,所述第一阻挡墙到所述显示区的距离,小于所述第一阻挡墙到所述开孔区的距离。
- 如权利要求1-21任一项所述的显示基板,其中,还包括位于所述至少一圈阻挡墙所在层与所述封装层之间的发光功能层;所述发光功能层具有对应所述开孔区的开口。
- 如权利要求22所述的显示基板,其中,还包括:位于所述衬底基板与所述至少一圈阻挡墙所在层之间的隔离层,所述隔离层包括至少一圈第一隔离结构和/或至少一圈第二隔离结构;其中,所述至少一圈第一隔离结构位于所述至少一圈阻挡墙与所述开孔区之间的所述隔离区;所述至少一圈第二隔离结构位于所述至少一圈阻挡墙与所述显示区之间的所述隔离区;在所述至少一圈阻挡墙与所述开孔区之间的所述隔离区内,所述第一隔 离结构处的所述发光功能层与所述第一隔离结构之间的所述发光功能层断开;在所述至少一圈阻挡墙与所述显示区之间的所述隔离区内,所述第二隔离结构处的所述发光功能层与所述第二隔离结构之间的所述发光功能层断开。
- 如权利要求23所述的显示基板,其中,在所述至少一圈阻挡墙与所述开孔区之间的所述隔离区内,所述第一保护层在所述第一隔离结构处或所述第一隔离结构之间具有开口;在所述至少一圈阻挡墙与所述显示区之间的所述隔离区内,所述第一无机封装在所述第二隔离结构处或所述第二隔离结构之间具有开口。
- 如权利要求24所述的显示基板,其中,所述隔离层为第一无机绝缘层,所述第一隔离结构为第一隔离槽,所述第二隔离结构为第二隔离槽;所述第一保护层在对应所述第一隔离槽处具有开口,所述第一无机封装层在对应所述第二隔离槽处具有开口。
- 如权利要求24所述的显示基板,其中,所述隔离层为源漏金属层,所述第一隔离结构为第一隔离柱,所述第二隔离结构为第二隔离柱;所述第一保护层在所述第一隔离柱处与所述第二无机封装层直接接触,且所述第一保护层在对应所述第一隔离柱之间具有开口,所述第一无机封装层在对应所述第二隔离柱之间具有开口。
- 如权利要求26所述的显示基板,其中,所述源漏金属层包括层叠设置的第一金属层、第二金属层和第三金属层;所述第一隔离柱和所述第二隔离柱均包括:位于所述第一金属层的第一隔离部、位于所述第二金属层的第二隔离部、及位于所述第三金属层的第三隔离部;其中,所述第一隔离部在所述衬底基板上的正投影大于所述第二隔离部在所述衬底基板上的正投影,且大致等于所述第一隔离部在所述衬底基板上的正投影。
- 如权利要求23-27任一所述的显示基板,其中,还包括:位于所述第 二保护层背离所述衬底基板一侧的桥接层,所述桥接层包括浮空电极,所述浮空电极在所述衬底基板上的正投影覆盖至少部分所述第二隔离结构在所述衬底基板上的正投影。
- 如权利要求28所述的显示基板,其中,所述浮空电极具有闭环形状,且所述浮空电极在所述衬底基板上的正投影完全覆盖所述至少一圈第二隔离结构在所述衬底基板上的正投影。
- 如权利要求6-21任一项所述的显示基板,其中,还包括:位于所述衬底基板面向所述至少一圈阻挡墙一侧的刻蚀阻挡层,且所述刻蚀阻挡层与所述衬底基板直接接触;所述第一保护层和所述第二保护层的材料与所述刻蚀阻挡层的材料相同。
- 如权利要求1-30任一项所述的显示基板,其中,所述填充层背离所述衬底基板的表面与所述衬底基板的距离,大于所述封装层背离所述衬底基板的表面与所述衬底基板的距离。
- 如权利要求28所述的显示基板,其中,还包括:依次位于所述桥接层背离所述衬底基板一侧的第二无机绝缘层和触控电极层;其中,所述桥接层还包括位于所述显示区的多个桥接电极;所述触控电极层包括在所述显示区沿第一方向延伸的多个第一触控电极、以及沿第二方向延伸的多个第二触控电极,并且所述多个第二触控电极或所述多个第一触控电极与所述多个桥接电极通过贯穿所述第二无机绝缘层的开口电连接,所述第一方向与所述第二方向相互交叉。
- 如权利要求32所述的显示基板,其中,还包括:位于所述触控电极层背离所述衬底基板一侧的第三保护层,所述第三保护层位于所述显示区和所述隔离区。
- 一种显示装置,其中,包括如权利要求1-33任一项所述的显示基板,以及取光模组;其中,所述取光模组安装于所述显示基板的开孔区。
- 一种如权利要求1-33任一项所述显示基板的制作方法,其中,包括:提供一个衬底基板,所述衬底基板包括开孔区、位于所述开孔区周围的显示区、以及位于所述显示区与所述开孔区之间的隔离区;其中,所述开孔区被配置为安装取光模组;在所述衬底基板上形成至少一圈阻挡墙,所述至少一圈阻挡墙在所述隔离区内环绕所述开孔区设置;在所述至少一圈阻挡墙所在层上形成封装层,所述封装层在所述衬底基板上的正投影完全覆盖所述显示区;在所述封装层上形成第一保护层,所述第一保护层至少完全覆盖所述至少一圈阻挡墙;在所述第一保护层上形成填充层,所述填充层位于所述隔离区,所述填充层完全覆盖所述至少一圈阻挡墙且与所述封装层至少部分重叠。
- 如权利要求35所述的制作方法,其中,在所述衬底基板上形成至少一圈阻挡墙的同时,还包括:在所述开孔区形成至少一圈阻挡坝。
- 如权利要求36所述的制作方法,其中,在所述至少一圈阻挡墙所在层上形成封装层,具体包括:在所述至少一圈阻挡墙所在层上依次形成第一无机封装层、有机封装层、第二无机封装层;其中,所述第一无机封装层至少在所述至少一圈阻挡墙与所述显示区之间的所述隔离区具有开口,所述第二无机封装层在所述至少一圈阻挡墙与所述开孔区之间的所述隔离区具有开口;在形成所述有机封装层的同时,还包括:形成位于所述开孔区的增强垫,所述增强垫位于所述至少一圈阻挡坝远离所述隔离区的一侧。
- 如权利要求37所述的制作方法,其中,在所述封装层上形成第一保护层,具体包括:在所述封装层上整面形成无机材料层;对所述无机材料层构图形成第一保护层,所述第一保护层仅在所述隔离区具有开口,且在所述隔离区内,所述第一保护层的开口与所述第二无机封 装层的开口之间导通。
- 如权利要求37所述的制作方法,其中,在所述第一保护层上形成填充层之后,还包括:在所述填充层上形成整面设置的第二保护层。
- 如权利要求39所述的制作方法,其中,在所述填充层上形成整面设置的第二保护层之后,还包括:采用激光切割的方式,将所述开孔区的各膜层去除,使得所述开孔区形成贯穿所述显示基板的通孔;所述开孔区的各膜层至少包括所述衬底基板、所述至少一圈阻挡坝、所述发光功能层、所述第二无机封装层、所述增强垫、所述第一保护层、所述填充层和所述第二保护层。
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PCT/CN2021/080752 WO2022193058A1 (zh) | 2021-03-15 | 2021-03-15 | 显示基板、其制作方法及显示装置 |
CN202180000534.2A CN115349183A (zh) | 2021-03-15 | 2021-03-22 | 显示面板、其制作方法及显示装置 |
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Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3276463A1 (en) * | 2016-07-29 | 2018-01-31 | Samsung Display Co., Ltd. | Display device |
CN110021635A (zh) * | 2017-12-11 | 2019-07-16 | 乐金显示有限公司 | 具有集成触摸屏的显示设备 |
CN110265583A (zh) * | 2019-07-26 | 2019-09-20 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
CN110854304A (zh) * | 2019-11-20 | 2020-02-28 | 云谷(固安)科技有限公司 | 显示面板的制备方法 |
CN210516729U (zh) * | 2019-10-31 | 2020-05-12 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
CN111162195A (zh) * | 2020-01-02 | 2020-05-15 | 合肥维信诺科技有限公司 | 显示面板和显示装置 |
CN111244112A (zh) * | 2020-01-20 | 2020-06-05 | 京东方科技集团股份有限公司 | 显示面板、显示装置和显示面板的制作方法 |
CN111725257A (zh) * | 2019-03-21 | 2020-09-29 | 三星显示有限公司 | 显示面板 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN201516729U (zh) * | 2009-09-12 | 2010-06-30 | 孙荣华 | 用弹性胶体件固定的墨盒 |
KR102431788B1 (ko) * | 2017-12-13 | 2022-08-10 | 엘지디스플레이 주식회사 | 표시장치 |
KR20200091050A (ko) * | 2019-01-21 | 2020-07-30 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
KR20210000383A (ko) * | 2019-06-25 | 2021-01-05 | 엘지디스플레이 주식회사 | 전계 발광 표시 장치 |
CN111384069B (zh) * | 2020-03-25 | 2022-12-27 | 京东方科技集团股份有限公司 | 显示基板及其制备方法、显示面板 |
CN111525044A (zh) * | 2020-04-27 | 2020-08-11 | 京东方科技集团股份有限公司 | 一种显示面板、显示装置和显示装置的制作方法 |
CN111740028B (zh) * | 2020-06-29 | 2024-01-02 | 京东方科技集团股份有限公司 | 显示面板及其制作方法 |
CN112271199B (zh) * | 2020-10-23 | 2024-02-27 | 京东方科技集团股份有限公司 | 显示装置及其显示面板、显示面板的制作方法 |
CN112349867B (zh) * | 2020-10-27 | 2024-04-23 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
-
2021
- 2021-03-15 GB GB2216389.3A patent/GB2610500A/en active Pending
- 2021-03-15 CN CN202180000491.8A patent/CN115428160B/zh active Active
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- 2021-03-22 WO PCT/CN2021/082203 patent/WO2022193332A1/zh unknown
- 2021-03-22 CN CN202180000534.2A patent/CN115349183A/zh active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3276463A1 (en) * | 2016-07-29 | 2018-01-31 | Samsung Display Co., Ltd. | Display device |
CN110021635A (zh) * | 2017-12-11 | 2019-07-16 | 乐金显示有限公司 | 具有集成触摸屏的显示设备 |
CN111725257A (zh) * | 2019-03-21 | 2020-09-29 | 三星显示有限公司 | 显示面板 |
CN110265583A (zh) * | 2019-07-26 | 2019-09-20 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法、显示装置 |
CN210516729U (zh) * | 2019-10-31 | 2020-05-12 | 云谷(固安)科技有限公司 | 显示面板及显示装置 |
CN110854304A (zh) * | 2019-11-20 | 2020-02-28 | 云谷(固安)科技有限公司 | 显示面板的制备方法 |
CN111162195A (zh) * | 2020-01-02 | 2020-05-15 | 合肥维信诺科技有限公司 | 显示面板和显示装置 |
CN111244112A (zh) * | 2020-01-20 | 2020-06-05 | 京东方科技集团股份有限公司 | 显示面板、显示装置和显示面板的制作方法 |
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