WO2022193332A1 - 显示面板、其制作方法及显示装置 - Google Patents

显示面板、其制作方法及显示装置 Download PDF

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Publication number
WO2022193332A1
WO2022193332A1 PCT/CN2021/082203 CN2021082203W WO2022193332A1 WO 2022193332 A1 WO2022193332 A1 WO 2022193332A1 CN 2021082203 W CN2021082203 W CN 2021082203W WO 2022193332 A1 WO2022193332 A1 WO 2022193332A1
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Prior art keywords
layer
away
annular
area
base substrate
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PCT/CN2021/082203
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English (en)
French (fr)
Inventor
胡勇
张则瑞
李大利
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京东方科技集团股份有限公司
绵阳京东方光电科技有限公司
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Priority to CN202180000534.2A priority Critical patent/CN115349183A/zh
Publication of WO2022193332A1 publication Critical patent/WO2022193332A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/60—OLEDs integrated with inorganic light-sensitive elements, e.g. with inorganic solar cells or inorganic photodiodes
    • H10K59/65—OLEDs integrated with inorganic image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/20—Changing the shape of the active layer in the devices, e.g. patterning
    • H10K71/231—Changing the shape of the active layer in the devices, e.g. patterning by etching of existing layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates

Definitions

  • the present disclosure relates to the field of display technology, and in particular, to a display panel, a manufacturing method thereof, and a display device.
  • a first aspect of the embodiments of the present disclosure provides a method for fabricating a display panel, wherein the display panel includes a display area, at least one area to be drilled surrounded by the display area, and a location between the area to be drilled and the area to be drilled.
  • the annular isolation area between the display areas; the manufacturing method includes:
  • a filling layer is formed on the side of the encapsulation layer in the to-be-drilled area and the annular isolation area away from the electroluminescent layer;
  • the encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer, and an organic encapsulation layer arranged in layers; the organic encapsulation layer includes a first organic encapsulation layer part and a second organic encapsulation layer part, and the first organic encapsulation layer
  • An organic encapsulation layer portion covers the area to be dug, located between the first inorganic encapsulation layer and the second inorganic encapsulation layer corresponding to the area to be dug; the second organic encapsulation layer covers the area
  • the display area is located between the first inorganic encapsulation layer and the second inorganic encapsulation layer corresponding to the display area.
  • the thickness of the first organic encapsulation layer portion is smaller than the height of the annular retaining wall.
  • the organic encapsulation layer is fabricated by an inkjet printing method.
  • the method before forming the annular retaining wall, the method further includes:
  • the forming the annular retaining wall on the base substrate includes:
  • the annular blocking wall is formed while the driving circuit layer is formed on the side of the flexible substrate facing away from the base substrate.
  • forming the annular retaining wall while forming the driving circuit layer on the side of the flexible substrate away from the base substrate includes:
  • a first annular retaining wall surrounding the to-be-drilled area and a second annular retaining wall surrounding the first annular retaining wall are formed in the annular isolation region on the side of the flexible substrate away from the substrate substrate , a plurality of second annular partitions located between the first annular retaining wall and the second annular retaining wall and surrounding the second annular retaining wall.
  • the forming a driving circuit layer on the side of the flexible substrate away from the base substrate includes:
  • a planarization layer is formed on the side of the source-drain metal layer away from the interlayer insulating layer.
  • the annular isolation portion is an annular isolation column, and the method further includes:
  • the annular spacer is formed at the same time as the patterning of the source-drain metal layer.
  • the annular isolation portion is an annular isolation groove, and the method further includes:
  • the flexible substrate, the buffer layer, the gate insulating layer and the interlayer insulating layer formed in the annular isolation region are etched to form the annular isolation trench. ;
  • the forming an electroluminescent layer on the base substrate and the annular retaining wall includes:
  • the orthographic projection of the pattern of the pixel defining layer on the base substrate partially overlaps the orthographic projection of the pattern of the first electrode layer on the base substrate;
  • the first annular retaining wall and the second annular retaining wall are in the same layer as at least one film layer among the planarization layer, the pixel defining layer and the support portion.
  • an orthographic projection of the filling layer on the base substrate and an orthographic projection of the second organic encapsulation layer portion on the base substrate have an overlapping area.
  • the second organic encapsulation layer partially covers the second annular isolation column and a sidewall of the second annular retaining wall on a side away from the first annular retaining wall.
  • a surface of the filling layer on a side away from the base substrate is higher than a surface of the encapsulation layer in the display region at a side away from the base substrate.
  • it also includes:
  • the touch function layer includes patterns of touch electrodes, and the orthographic projection of the pattern of the touch electrodes on the base substrate and the orthographic projection of the filling layer on the base substrate do not overlap with each other.
  • forming a touch function layer on a side of the barrier layer away from the base substrate includes:
  • the first metal layer includes a pattern of a first touch electrode connection portion
  • the second metal layer includes a pattern of a first touch electrode, a second touch electrode and a second touch electrode connection portion
  • the orthographic projection of the first touch electrode connection portion on the base substrate does not overlap with the orthographic projection of the filling layer on the base substrate.
  • it also includes:
  • Drilling is performed on the area to be drilled in the peeled display panel.
  • a second aspect of the embodiments of the present disclosure provides a display panel fabricated by any of the foregoing fabrication methods
  • the display panel includes:
  • the flexible substrate including a display area surrounding at least one punched-out area, and an annular isolation area between the display area and the punched-out area;
  • a driving circuit layer located on the flexible substrate
  • an electroluminescent layer located on the side of the driving circuit layer away from the flexible substrate;
  • an encapsulation layer located on the side of the electroluminescent layer away from the flexible substrate;
  • a filling layer located on the side of the encapsulation layer away from the electroluminescent layer, the filling layer is located in the annular isolation;
  • the touch function layer is located on the side of the barrier layer away from the encapsulation layer; wherein,
  • the surface of the filling layer facing away from the flexible substrate is higher than the surface of the packaging layer in the display area facing away from the flexible substrate;
  • the touch function layer includes patterns of touch electrodes, and the orthographic projection of the pattern of the touch electrodes on the flexible substrate and the orthographic projection of the filling layer on the flexible substrate do not overlap with each other.
  • it also includes:
  • a protective layer located on the side of the touch function layer and the barrier layer away from the encapsulation layer;
  • the driving circuit layer includes:
  • an active layer located on the side of the buffer layer away from the flexible substrate
  • a gate insulating layer located on the side of the active layer and the buffer layer away from the flexible substrate;
  • a gate metal layer located on the side of the gate insulating layer away from the active layer;
  • an interlayer insulating layer located on the side of the gate metal layer away from the gate insulating layer;
  • a source-drain metal layer located on the side of the interlayer insulating layer away from the gate metal layer;
  • planarization layer located on the side of the source-drain metal layer away from the interlayer insulating layer;
  • the electroluminescent layer includes:
  • a first electrode layer located on the side of the planarization layer away from the source-drain metal layer, the first electrode layer includes a plurality of first electrodes;
  • a pixel definition layer located on the side of the planarization layer away from the source-drain metal layer, the pixel definition layer is located at a spaced position between each of the first electrodes;
  • a support part located on a side of the pixel defining layer away from the planarization layer;
  • a light-emitting layer located on the side of the first electrode away from the planarization layer;
  • a second electrode layer located on the side of the light emitting layer and the pixel defining layer away from the first electrode layer;
  • the encapsulation layer includes:
  • a first inorganic encapsulation layer located on the side of the second electrode layer away from the light-emitting layer
  • an organic encapsulation layer located on the side of the first inorganic encapsulation layer away from the second electrode layer;
  • the second inorganic encapsulation layer is located on the side of the organic encapsulation layer away from the first encapsulation layer;
  • the orthographic projection of the first inorganic encapsulation layer and the second inorganic encapsulation layer on the flexible substrate covers the display area and the annular isolation area; the orthographic projection of the organic encapsulation layer on the flexible substrate within said display area;
  • the touch function layer includes:
  • a first metal layer located on the side of the barrier layer away from the encapsulation layer
  • a touch insulating layer located on the side of the first metal layer away from the barrier layer;
  • the second metal layer is located on the side of the touch insulating layer away from the first metal layer;
  • the first metal layer includes a pattern of a first touch electrode connection portion
  • the second metal layer includes a pattern of a first touch electrode, a second touch electrode and a second touch electrode connection portion, the first touch electrode
  • the touch electrode connecting portion is electrically connected to the first touch electrode through the via hole of the touch insulating layer;
  • the orthographic projection of the pattern of the first touch electrode connection portion on the flexible substrate does not overlap with the orthographic projection of the filling layer on the flexible substrate.
  • the annular isolation region includes:
  • annular retaining wall arranged around the digging area
  • At least one second annular partition is arranged around the annular retaining wall; wherein,
  • the annular retaining wall is disposed on the same layer as at least one of the flat layer, the pixel defining layer and the support column.
  • the organic encapsulation layer covers the second annular isolation portion and a sidewall of the annular baffle wall facing the display area.
  • the orthographic projection of the filling layer on the flexible substrate and the orthographic projection of the organic encapsulation layer on the flexible substrate have an overlapping area.
  • the filling layer covers the annular retaining wall, and an edge of the filling layer on a side close to the display area does not exceed an edge of the second annular partition portion closest to the display area.
  • first annular isolation portion and the second annular isolation portion are both annular isolation columns
  • the annular isolation column and the source-drain metal layer are arranged in the same layer.
  • first annular isolation portion and the second annular isolation portion are both annular isolation grooves
  • the annular isolation groove penetrates through the buffer layer, the gate insulating layer and the interlayer insulating layer, and forms an annular groove on the flexible substrate.
  • a third aspect of the embodiments of the present disclosure provides a display device including the above-mentioned display panel.
  • FIG. 1 is a schematic plan view of a display panel according to an embodiment of the present disclosure
  • FIG. 2 is a flowchart of a method for fabricating a display panel provided by an embodiment of the present disclosure
  • Fig. 3 is the cross-sectional structure schematic diagram of I-I' region in Fig. 1;
  • FIG. 4 is one of the schematic cross-sectional structural diagrams of the display panel in the area to be drilled according to an embodiment of the present disclosure
  • FIG. 5 is the second schematic diagram of the cross-sectional structure of the display panel in the area to be drilled according to an embodiment of the present disclosure
  • FIG. 6 is one of the schematic cross-sectional structural diagrams of the display panel provided by the embodiment of the present disclosure.
  • FIG. 7 is a second schematic diagram of a cross-sectional structure of a display panel according to an embodiment of the present disclosure.
  • FIG. 8 is the third schematic diagram of the cross-sectional structure of the display panel in the area to be drilled according to an embodiment of the present disclosure
  • FIG. 9 is a fourth schematic diagram of a cross-sectional structure of a display panel in an area to be drilled according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic cross-sectional structure diagram of a touch function layer provided by an embodiment of the present disclosure.
  • FIG. 11 is one of the schematic cross-sectional structural diagrams of the display panel provided in the embodiment of the present disclosure in the hole-digging region;
  • FIG. 12 is the second schematic diagram of the cross-sectional structure of the display panel provided in the embodiment of the present disclosure in the hole-digging region.
  • OLED Organic Light-emitted Diode
  • Flexible displays are usually fabricated on rigid substrates, and then the flexible displays are peeled off from the rigid substrates.
  • the current display screen will dig holes in the screen to install functional devices. Since the film layer at the hole digging position is relatively weak compared with other areas, it is necessary to peel off or remove the display screen. When bending, the film layer at the digging position is easy to be separated and separated, resulting in the phenomenon of rainbow pattern.
  • FIG. 1 is a schematic plan view of a display panel according to an embodiment of the present disclosure.
  • the display panel can be divided into: a display area AA, a to-be-drilled area H, an annular isolation area VA1 and a peripheral area VA2.
  • the display area AA occupies most of the area of the display panel and is used for image display; the peripheral area VA2 is arranged around the display area AA, and the peripheral area VA2 is used for wiring and connecting driving elements.
  • the display area AA is provided with at least one area H to be dug, and the area H to be dug will be processed after the display panel is fabricated, so that the display panel forms a through hole in the display area AA. through hole.
  • the through holes formed in the display panel are used to set at least one of the image acquisition structure, the camera, the earpiece, and the light sensor.
  • a ring-shaped isolation area VA1 is provided between the hole-digging area H and the display area AA surrounding the area to be drilled.
  • the ring-shaped isolation area VA1 surrounds the area to be drilled H, and serves as a function of isolating the display area AA at the hole-digging position. effect.
  • FIG. 2 is a flowchart of a method for fabricating a display panel according to an embodiment of the present disclosure.
  • the manufacturing method of the display panel includes:
  • the encapsulation layer includes a first inorganic encapsulation layer, a second inorganic encapsulation layer and an organic encapsulation layer arranged in layers;
  • the organic encapsulation layer includes a first organic encapsulation layer part and a second organic encapsulation layer part, and the first organic encapsulation layer part covers
  • the area to be dug is located between the first inorganic encapsulation layer and the second inorganic encapsulation layer corresponding to the area to be dug;
  • the second organic encapsulation layer partially covers the display area and is located between the first inorganic encapsulation layer and the second inorganic encapsulation layer corresponding to the display area between the encapsulation layers.
  • the display panel provided by the embodiment of the present disclosure may be a flexible display panel. Therefore, before forming the first annular barrier wall, the method further includes: forming a flexible substrate on the substrate substrate.
  • the method further includes: forming a driving circuit layer on the side of the flexible substrate away from the base substrate, and at the side of the flexible substrate away from the substrate An annular retaining wall is formed in the annular isolation area on one side of the substrate.
  • Fig. 3 is a schematic cross-sectional structure diagram of the I-I' region in Fig. 1 .
  • the display panel manufactured by the manufacturing method of the display panel provided by the embodiment of the present disclosure includes: a base substrate 11 , a driving circuit layer 12 , an electroluminescence layer 13 and an encapsulation layer 14 .
  • the base substrate 11 is located at the bottom of the display panel and has the function of supporting and carrying.
  • the base substrate 11 can be a glass substrate or the like, which is not limited here.
  • a layer of flexible substrate 10 will be provided on the base substrate 11 to serve as the substrate of the flexible display panel. After the fabrication is completed, the flexible substrate 10 and the base substrate 11 are peeled off to obtain a flexible display panel.
  • the driving circuit layer 12 is located above the base substrate 11, and the driving circuit layer 12 includes a plurality of metal layers and a plurality of insulating layers, and each metal layer includes a set pattern, thereby forming a thin film transistor (Thin Film Transistor, TFT for short) structures such as capacitors, resistors, and signal lines are used to drive the electroluminescent layer 13 to emit light.
  • TFT Thin Film Transistor
  • the orthographic projection of the to-be-drilled area H on the base substrate 11 and the driving circuit layer 12 The orthographic projection of the metal layer on the base substrate 11 does not have an overlapping area.
  • the annular isolation area VA1 is used to separate the position where the through hole is provided and the display area AA by a certain distance, so as to avoid the influence on the display area AA caused by digging holes in the display screen.
  • a plurality of annular blocking walls may be arranged in the annular isolation area VA1 to prevent the through holes from transmitting water vapor and oxygen to the display area AA to cause damage to the display device in the display area AA.
  • the above-mentioned annular retaining wall at least includes a first annular retaining wall d1, and the first annular retaining wall d1 defines the range of the area H to be dug.
  • the first annular retaining wall will be The area H surrounded by the wall d1 is cut out to form the above-mentioned through hole.
  • the annular retaining walls arranged in the annular isolation region VA1 are all formed by at least one corresponding film layer in the driving circuit layer using the same patterning process.
  • the electroluminescent layer 13 is located on the base substrate 11 and the first annular blocking wall d1.
  • the display panel provided by the embodiment of the present disclosure may be an OLED panel, the electroluminescent layer 13 includes a plurality of organic light emitting diode devices, and the organic light emitting diode devices include a first electrode connected to the driving circuit layer 12, and an electrode disposed opposite to the first electrode.
  • the second electrode, and the organic light-emitting layer between the first electrode and the second electrode by applying a voltage to the first electrode and the second electrode, electrons and holes can be driven to generate excitons in the organic light-emitting layer, and the excitons are accepted by the organic light-emitting layer. Excitation, to realize the exit of light.
  • the orthographic projection of the electroluminescent layer 13 on the base substrate 11 covers the area H to be dug, the annular isolation area VA1 and the entire area where the display area AA is located. After the display panel is fabricated, the region H to be drilled will be completely removed, so there is no electroluminescent layer 13 in the finally formed through hole.
  • the encapsulation layer 14 is located on the side of the electroluminescent layer 13 away from the base substrate 11 .
  • the organic light-emitting materials and organic functional materials in the electroluminescent layer 13 will be destroyed when encountering water and oxygen, thereby seriously affecting the service life.
  • an encapsulation layer 14 is provided on the side of the electroluminescent layer 13 away from the base substrate 11 .
  • the encapsulation layer 14 usually includes an inorganic encapsulation layer and an organic encapsulation layer 142 that are alternately stacked, wherein the inorganic encapsulation layer can be made of materials such as silicon oxide or silicon nitride, which has a good function of isolating water and oxygen, and Disposing the organic encapsulation layer 142 between the inorganic encapsulation layers can increase the flexibility of the encapsulation layer 14 , which is suitable for flexible display panels.
  • the inorganic encapsulation layer can be formed by a chemical vapor deposition process, and the organic encapsulation layer can be formed by an inkjet printing process.
  • the encapsulation layer 14 may include two inorganic encapsulation layers and one organic encapsulation layer 142, the inorganic encapsulation layers are a first inorganic encapsulation layer 141a and a second inorganic encapsulation layer 141b, and the organic encapsulation layer 142 is located between the first inorganic encapsulation layer 141a and the second inorganic encapsulation layer 141a. between the inorganic encapsulation layers 141b.
  • the inorganic encapsulation layers 141a and 141b cover all areas of the display panel, including the area to be dug hole H, the annular isolation area VA1 and the display area AA in FIG. 3 , while the organic encapsulation layer 142 only covers the area where the display area AA is located. area.
  • FIG. 4 is one of the schematic diagrams of the cross-sectional structure of the display panel in the area to be drilled according to an embodiment of the present disclosure.
  • a filling layer 15 is further provided on the side of the annular isolation region VA1 and the encapsulation layer 14 of the to-be-drilled region H away from the base substrate 11 .
  • the orthographic projection of the filling layer 15 on the base substrate 11 is located within the range of the orthographic projection of the to-be-drilled area H and the annular isolation area VA1 on the base substrate 11 .
  • the filling layer 15 is used to fill the gap formed between the area H to be dug and the display area AA, so as to enhance the strength in the area H to be dug.
  • the flexible substrate 10 is peeled off from the base substrate 11 , which can effectively reduce the problem of film separation.
  • the filling layer 15 can be made of an organic material, for example, an organic resin material, with a thickness of 2 ⁇ m-4 ⁇ m.
  • the organic material usually has a relatively large thickness, and can fill the film layer fault formed in the area H to be dug.
  • the current display panels all have a touch function.
  • a Multi-Layer Integrated Touch Flexible Multi-Layer On Cell, FMLOC for short
  • FMLOC Flexible Multi-Layer On Cell
  • the filling layer 15 is usually made of organic materials.
  • the organic material will shrink during the baking process, and the thickness of the filling layer 15 is the largest in the area H to be dug. Therefore, during the shrinking process of the filling layer 15, a large pulling force will be generated on the underlying film layer in the area to be dug H, which may still lead to the separation of the film layer, thereby causing the problem of rainbow patterns.
  • FIG. 5 is a second schematic diagram of a cross-sectional structure of a display panel in an area to be drilled according to an embodiment of the present disclosure.
  • an organic encapsulation layer is formed in the area H to be dug in the embodiment of the present disclosure, thereby reducing the amount of time the filling layer 15 is dug up.
  • the thickness of the hole area H reduces the pulling effect of the film layer below the hole area H to be dug during the shrinking process of the filling layer 15, thereby completely avoiding the rainbow pattern problem caused by the separation of the film layer.
  • the organic encapsulation layer in the encapsulation layer is divided into two parts, namely a first organic encapsulation layer part 142a and a second organic encapsulation layer part 142b; wherein, the first organic encapsulation layer part 142a covers the area H to be dug , located between the first inorganic encapsulation layer 141a and the second inorganic encapsulation layer 141b corresponding to the area H to be dug; the second organic encapsulation layer 142b covers the display area AA, and is located between the first inorganic encapsulation layer 141a and between the second inorganic encapsulation layers 141b.
  • the first organic encapsulation layer 142a and the second organic encapsulation layer 142b are formed in one process, and the organic encapsulation layer can be formed in the area to be dug hole H and the display area AA by using inkjet printing technology.
  • the thickness of the filling layer 15 in the area H to be dug can be effectively reduced when the filling layer 15 is formed, and the filling layer 15 will not directly contact when shrinking.
  • the underlying inorganic encapsulation layers 141a and 141b will not cause separation between the film layers and avoid the phenomenon of rainbow patterns.
  • a plurality of film layers in the driving circuit layer 12 can be used to form stacking, so that the first annular retaining wall d1 has a certain height, then when inkjet printing the material of the organic packaging layer,
  • the liquid of the organic encapsulation layer can be limited within the range of the first annular retaining wall d1, so that the height of the first annular retaining wall d1 is greater than the thickness of the organic encapsulation layer, thereby preventing the liquid material of the organic encapsulation layer from overflowing into the annular isolation area.
  • the organic encapsulation layer is prevented from generating a passage extending to the display area AA, thereby preventing water and oxygen from entering the display area AA.
  • a first annular retaining wall surrounding the area to be dug holes is formed, and at the same time a second annular retaining wall surrounding the first annular retaining wall is also formed
  • a retaining wall, a plurality of annular partitions located between the first annular retaining wall and the second annular retaining wall and surrounding the second annular retaining wall, in order to distinguish the partitions at different positions, the embodiment of the present disclosure will be located in the first annular retaining wall
  • the annular partition part with the second annular blocking wall is called the first annular partition part
  • the annular partition part surrounding the second annular partition wall is called the second annular partition part.
  • the annular isolation area VA1 further includes: a second annular blocking wall d2 , at least one first annular isolation portion c1 and at least one second annular isolation portion c2 .
  • the second annular retaining wall d2 is arranged to surround the first annular retaining wall d1.
  • the first annular retaining wall d1 and the second annular retaining wall d2 may be concentric structures, and the first annular retaining wall d1 and the second annular retaining wall d2 are separated by a set distance.
  • At least one first annular partition c1 is further provided between the first annular blocking wall d1 and the second annular blocking wall d2; and at least one second annular partition c2 is also provided surrounding the second annular blocking wall d2.
  • the organic encapsulation layer needs to be cut off in the annular isolation area VA1 to avoid forming a passage so that external water and oxygen can enter the display area AA.
  • the first annular retaining wall d1 is used to define the first organic encapsulation layer portion 142a in the area H to be dug in the first annular retaining wall d1
  • the second annular retaining wall d2 is used to define the second organic packaging layer portion 142b. It is defined in the display area AA, so as to isolate the organic encapsulation layer in the annular isolation area VA1.
  • At least one first annular partition c1 is arranged between the first annular retaining wall d1 and the second annular retaining wall d2, and at least one second annular partition c2 is arranged outside the second annular retaining wall d2, which can act as a barrier Water and oxygen, prevent crack extension, and cut off the role of electroluminescent layer 13 .
  • the driving circuit layer is formed on the side of the flexible substrate away from the base substrate, including:
  • a planarization layer is formed on the side of the source-drain metal layer away from the interlayer insulating layer.
  • FIG. 6 is one of the schematic cross-sectional structural diagrams of the display panel provided by the embodiment of the present disclosure
  • FIG. 7 is the second schematic cross-sectional structural schematic diagram of the display panel provided by the embodiment of the present disclosure.
  • FIGS. 6 and 7 only show the structures of the annular retaining wall and the annular isolation column on one side of the area H to be dug.
  • the driving circuit layer 12 includes:
  • the buffer layer 121 is located on the base substrate 11 .
  • the buffer layer 121 can match the stress between the base substrate 11 and the upper film layer, and can also improve the sealing performance of the display panel.
  • the buffer layer 121 can be made of inorganic materials, which is not limited herein.
  • the active layer 122 is located on the side of the buffer layer 121 away from the base substrate 11 .
  • the active layer 122 is a functional film layer for fabricating thin film transistors, and the active layer 122 has a predetermined pattern.
  • the active layer 122 includes a source region and a drain region formed by doping N-type ions or P-type ions, and a region between the source region and the drain region is an undoped channel region.
  • the gate insulating layer 123 is located on the side of the active layer 122 away from the buffer layer 121 .
  • the gate insulating layer 123 is used to insulate the metal layer above the active layer 122 .
  • the material of the gate insulating layer 123 can be silicon oxide, silicon nitride or the like, which is not limited herein.
  • the gate metal layer 124 is located on the side of the gate insulating layer 123 away from the active layer 122 .
  • the gate metal layer 124 has a pattern including gate electrodes and gate lines.
  • the gate metal layer 124 may adopt a single-layer or multi-layer metal stack structure, which is not limited herein.
  • the interlayer insulating layer 125 is located on the side of the gate metal layer 124 away from the gate insulating layer 123 .
  • the interlayer insulating layer 125 is used to insulate the metal layer above the gate metal layer 124 .
  • the material of the gate insulating layer 125 can be silicon oxide, silicon nitride or the like, which is not limited herein.
  • the source-drain metal layer 126 is located on the side of the interlayer insulating layer 125 away from the gate metal layer 124 .
  • the source-drain metal layer 126 has a pattern including source electrodes, drain electrodes and data lines.
  • the source-drain metal layer 126 may adopt a single-layer or multi-layer metal stack structure, which is not limited herein.
  • the active layer, the gate electrode, the source electrode and the drain electrode constitute the thin film transistor structure.
  • the planarization layer 127 is located on the side of the source-drain metal layer 126 away from the interlayer insulating layer 125 .
  • the planarization layer 127 is used for insulating the source-drain metal layer 126 , and at the same time, the surface of the film layer is planarized, which is beneficial for forming other devices on the planarization layer 127 .
  • the planarization layer 127 can be made of inorganic material or organic material, which is not limited herein.
  • the surface of the planarization layer 127 has via holes exposing the drain electrodes.
  • an electroluminescent layer 13 is formed on the driving circuit layer 12 .
  • forming an electroluminescent layer on the base substrate and the first annular retaining wall includes:
  • a second electrode layer is formed on the side of the light-emitting layer facing away from the first electrode layer.
  • the electroluminescent layer 13 specifically includes:
  • the first electrode layer 131 is located on the side of the planarization layer 127 away from the source-drain metal layer 126 .
  • the first electrode layer 131 includes a plurality of first electrodes separated from each other, and each first electrode is electrically connected to the drain of the underlying thin film transistor through a via hole of the planarization layer 127 to transmit a driving signal to the first electrode.
  • the material of the first electrode layer 131 may be a transparent conductive material such as indium tin oxide, which is not limited herein.
  • the pixel defining layer 132 is located on the side of the planarization layer 127 away from the source-drain metal layer 126 and is located at a space between the first electrodes.
  • the pixel defining layer 132 is used to separate the regions where the first electrodes are located, and has a larger thickness than the first electrode layer 131 and other organic functional film layers.
  • the support portion (not shown in the figure) is located on the side of the pixel defining layer 132 away from the planarization layer 127 .
  • the support portion is used to support other components above the display panel.
  • the light emitting layer 133 is located on the side of the first electrode away from the planarization layer 127 .
  • the light emitting layers 133 formed on different first electrodes may use the same material or different materials.
  • the light-emitting layer 133 may use organic light-emitting materials that emit different colors, and the light-emitting layer is only formed on the corresponding first electrodes; or, the light-emitting layer 133 may also use organic light-emitting materials that emit white light.
  • the light-emitting layer is arranged in the whole layer, and then the color filter substrate is arranged to realize the emission of light of different colors.
  • the second electrode layer 134 is located on the side of the light emitting layer 133 , the pixel defining layer 132 , and the support portion away from the planarization layer 127 .
  • the second electrode layer 134 is provided in the whole layer, and the material of the second electrode layer 134 can be a conductive material such as metallic silver, which is not limited herein.
  • the first annular retaining wall d1 and the second annular retaining wall d2 may be fabricated by using at least one film layer among the planarization layer 127 , the pixel defining layer 132 and the support portion.
  • the first annular spacer c1 and the second annular spacer c2 may take the form of annular spacer columns.
  • the annular isolation column can be made of the source-drain metal layer 126, and the source-drain metal layer 126 is usually made of laminated metal, so that it can be made of titanium/aluminum/titanium three-layer metal, so the annular isolation column can also be made of titanium/aluminum/titanium. Made of aluminum/titanium three-layer metal.
  • the annular spacer can play the role of cutting off the electroluminescent layer 13 , so that the electroluminescence in the display area AA and the annular spacer VA1 is enhanced. Layer 13 is disconnected.
  • the first annular isolation portion c1 and the second annular isolation portion c2 may also be in the form of annular isolation grooves.
  • the annular isolation trench is formed by etching the above-mentioned film layers after the flexible substrate 10 , the buffer layer 121 , the gate insulating layer 123 and the interlayer insulating layer 125 are formed to form the annular isolation trench.
  • the annular isolation groove has a larger depth, then when the electroluminescent layer 13 is formed, the annular isolation groove can disconnect the electroluminescent layer 13, so that the display area AA and the electroluminescent layer 13 in the annular isolation area VA1 are disconnected open.
  • the orthographic projection of the filling layer 15 on the base substrate 11 and the orthographic projection of the second organic encapsulation layer portion 142 b on the base substrate 11 have an overlapping area.
  • the filling layer 15 is used to fill the area H to be dug and the annular isolation area VA1 with the film layer, thereby increasing the strength of the film layer originally compared to the thin area.
  • the thickness in this area can avoid the problem of film separation caused when the flexible substrate 10 is peeled off from the base substrate 11 .
  • the second annular retaining wall d2 can limit the inkjet printing range of the organic packaging material when the second organic packaging layer portion 142b is formed, so as to prevent the organic packaging material from overflowing the second annular retaining wall d2. Therefore, in the embodiment of the present disclosure, the second annular retaining wall d2
  • the organic encapsulation layer portion 142b may cover the second annular isolation column c2 and the sidewall of the second annular retaining wall d2 on the side away from the first annular retaining wall d1, without exceeding the range of the second annular retaining wall d2.
  • the manufacturing method of the display panel provided by the embodiment of the present disclosure further includes:
  • the touch function layer includes patterns of touch electrodes, and the orthographic projection of the patterns of the touch electrodes on the base substrate and the orthographic projection of the filling layer on the base substrate do not overlap with each other.
  • the filling layer 15 is made of organic materials, the filling layer 15 usually has a relatively large thickness. As shown in FIG. 5 , the surface of the filling layer 15 on the side away from the base substrate 11 is higher than that of the encapsulation layer 14 in the display area AA. The surface on the side of the base substrate 11 . Then, the edge of the filling layer 15 will have a sharper edge, and when the touch functional layer is formed, the touch electrodes in the touch functional layer may be cut off.
  • FIG. 8 is the third schematic diagram of the cross-sectional structure of the display panel in the area to be drilled according to the embodiment of the present disclosure
  • FIG. 9 is the fourth schematic diagram of the cross-sectional structure of the display panel in the area to be drilled according to the embodiment of the present disclosure.
  • the barrier layer 16 is located on the side of the encapsulation layer 14 and the filling layer 15 away from the base substrate 11 .
  • the blocking layer 16 plays a blocking role between the electroluminescent layer 13 and the touch electrodes.
  • the barrier layer 16 can be made of inorganic materials, which is not limited herein.
  • the touch function layer 17 is located on the side of the barrier layer 16 away from the base substrate 11 .
  • the touch function layer 17 includes touch electrodes t.
  • the touch function layer 17 usually includes a plurality of metal layers, and patterns of touch electrodes are fabricated on the metal layers to realize the touch function.
  • the protective layer 18 is located on the side of the touch functional layer 17 away from the blocking layer 16 .
  • the protective layer 18 is used to insulate and protect the touch function layer 17 and has the function of planarization.
  • the protective layer 18 can be made of an organic material, for example, an organic resin material, which is not limited herein.
  • the orthographic projection of the touch electrodes t on the base substrate 11 and the orthographic projection of the filling layer 15 on the base substrate 11 do not overlap with each other.
  • the range of the filling layer 15 is indented toward the annular isolation area VA1, and the pattern of the touch electrode t and the filling layer 15 are prevented from overlapping each other, so that the touch electrode t can be prevented from being cut by the edge of the filling layer 15, and the touch control is ensured.
  • the signal of electrode t is connected to the signal.
  • forming the touch function layer on the side of the barrier layer away from the base substrate includes:
  • the first metal layer includes the pattern of the first touch electrode connection portion
  • the second metal layer includes the pattern of the first touch electrode, the second touch electrode and the second touch electrode connection portion
  • the orthographic projection of the first touch electrode connection portion on the base substrate and the orthographic projection of the filling layer on the base substrate do not overlap with each other.
  • FIG. 10 is a schematic cross-sectional structure diagram of a touch electrode layer according to an embodiment of the present disclosure.
  • the touch function layer 17 includes:
  • the first metal layer 171 is located on the side of the barrier layer 16 away from the base substrate 11 .
  • the first metal layer includes the pattern of the first touch electrode connecting portion a1.
  • the touch insulating layer 172 is located on the side of the first metal layer 171 away from the barrier layer 16 .
  • the touch insulating layer 172 is used to insulate the metal layer, and can generally be made of an inorganic material, which is not limited herein.
  • the second metal layer 173 is located on the side of the touch insulating layer 172 away from the first metal layer 171 .
  • the second metal layer 173 includes the patterns of the first touch electrodes a2 , the second touch electrodes (not shown in the figure) and the second touch electrode connecting portions b1 ; the first touch electrodes located on the first metal layer 171 are connected to The part a1 is connected to the first touch electrode a2 located in the second metal layer through the via hole of the touch insulating layer 172 .
  • the orthographic projection of the first touch electrode connecting portion a1 on the base substrate 11 and the orthographic projection of the filling layer 15 on the base substrate 11 do not overlap with each other.
  • the first touch electrode and the second touch electrode usually adopt a metal mesh structure.
  • the to-be-drilled area H and the annular isolation area VA1 will be hollowed out. Therefore, in the to-be-drilled area There is no metal network pattern in H and annular isolation region VA1.
  • the manufacturing method of the display panel provided by the embodiment of the present disclosure further includes:
  • Drilling is performed on the area to be drilled in the peeled display panel.
  • an organic encapsulation layer is formed in the area to be dug, thereby reducing the thickness of the filling layer in the area to be dug, and reducing the amount of time the filling layer is treated in the shrinking process.
  • the pulling effect of the lower film layer in the digging area completely avoids the rainbow pattern problem caused when the flexible substrate is peeled off.
  • the cutting line is located between the first annular retaining wall d1 and the first annular partition c1 adjacent to it, so when digging the display panel After that, the first organic encapsulation layer portion 141a and the first annular blocking wall d1 surrounding the first organic encapsulation layer portion between the two dotted lines in FIG. 8 and FIG. 9 are excavated.
  • an embodiment of the present disclosure also provides a display panel, which is fabricated by using any of the foregoing fabrication methods.
  • a display panel which is fabricated by using any of the foregoing fabrication methods.
  • an organic encapsulation layer is formed in the area to be dug, thereby reducing the thickness of the filling layer in the area to be dug, and reducing the thickness of the filling layer in the area to be dug.
  • the pulling action of the lower film layer in the area to be dug is used to completely avoid the rainbow pattern problem caused by peeling off the flexible substrate.
  • FIG. 11 is one of the schematic cross-sectional structural diagrams of the display panel provided in the embodiment of the present disclosure in the hole-digging region.
  • the display panel includes: a flexible substrate 10 , a driving circuit layer 12 , an electroluminescent layer 13 , an encapsulation layer 14 , a filling layer 15 , a barrier layer 16 , a touch function layer 17 and a protective layer 18 .
  • the flexible substrate 10 includes a display area AA, the display area AA surrounds at least one digging area H', and an annular isolation area VA1 located between the display area AA and the digging area H'.
  • the driving circuit layer 12 is located on the flexible substrate 10; the electroluminescent layer 13 is located on the side of the driving circuit layer 12 away from the flexible substrate 10; the encapsulation layer 14 is located on the side of the electroluminescent layer 13 away from the flexible substrate 10; The layer 15 is located on the side of the encapsulation layer 14 away from the electroluminescent layer 13; the barrier layer 16 is located on the side of the encapsulation layer 14 and the filling layer 15 away from the electroluminescent layer 13; the touch functional layer 17 is located on the barrier layer 16 away from the encapsulation layer 14 The protective layer 18 is located on the side of the touch function layer 17 and the barrier layer 16 away from the encapsulation layer 14 .
  • the filling layer 15 in the display panel fabricated by the above manufacturing method is located in the annular isolation VA1, and the surface of the filling layer 15 on the side away from the flexible substrate 10 is higher than that in the display area AA.
  • the filling layer 15 in the embodiment of the present disclosure is indented in a direction away from the display area AA during fabrication, and the width of the touch components adjacent to the filling layer 15 in the touch functional layer can be reduced, Therefore, the patterns of the filling layer 15 and the touch electrodes do not overlap with each other.
  • the annular isolation area VA1 also includes:
  • the annular retaining wall d2 is set around the digging area H';
  • At least one second annular partition c2 is arranged around the annular blocking wall d2.
  • the encapsulation layer 14 When the electroluminescent layer 13 is encapsulated, the encapsulation layer 14 includes a first inorganic encapsulation layer 141a, a second inorganic encapsulation layer 141b and an organic encapsulation layer 142 located between the first inorganic encapsulation layer 141a and the second inorganic encapsulation layer 141b .
  • the annular blocking wall d2 may confine the material of the organic encapsulation layer 142 within the display area AA.
  • the organic encapsulation layer 142 covers the second annular partition c2 and the sidewall of the annular retaining wall d2 facing the display area AA, but does not exceed the range defined by the annular retaining wall d2 .
  • the first annular isolation part c1 and the second annular isolation part c2 are used to cut off the electroluminescent layer 13, so that the electroluminescent layer in the display area AA and the annular isolation area VA1 can be disconnected, and the water and oxygen transmission path can be blocked, The entry of water and oxygen into the organic light emitting diode device of the display area AA is avoided.
  • the orthographic projection of the filling layer 15 on the flexible substrate 10 and the orthographic projection of the organic encapsulation layer 142 on the flexible substrate 10 have an overlapping area.
  • the filling layer 15 covers the annular retaining wall d2, but the edge of the filling layer 15 on the side close to the display area AA does not exceed the edge of the second annular isolation portion c2 closest to the display area AA.
  • the edge of the filling layer 15 is limited within the range of the second annular isolation portion c2 closest to the display area AA.
  • the first annular spacer c1 and the second annular spacer c2 may take the form of annular spacer columns.
  • the annular isolation column can be made of a source-drain metal layer, and the source-drain metal layer is usually made of laminated metal, so that it can be made of titanium/aluminum/titanium three-layer metal, so the annular isolation column can also be made of titanium/aluminum/titanium Made of titanium three-layer metal. Since the edge and corner of the annular spacer away from the flexible substrate 10 is relatively sharp, the annular spacer can play the role of cutting off the electroluminescent layer 13, so that the electroluminescence in the display area AA and the annular spacer VA1 is enhanced. Layer 13 is disconnected.
  • the first annular isolation portion c1 and the second annular isolation portion c2 may also be in the form of annular isolation grooves.
  • the annular isolation trench is formed by etching the above-mentioned film layers after the flexible substrate 10, the buffer layer, the gate insulating layer and the interlayer insulating layer are formed, thereby forming the annular isolation trench.
  • the annular isolation groove has a larger depth, then when the electroluminescent layer 13 is formed, the annular isolation groove can disconnect the electroluminescent layer 13, so that the display area AA and the electroluminescent layer 13 in the annular isolation area VA1 are disconnected open.
  • an embodiment of the present disclosure further provides an apparatus including any of the above-mentioned display panels. Since the principle of solving the problem of the display device is similar to that of the above-mentioned display panel, the implementation of the display device can refer to the implementation of the above-mentioned display panel, and the repetition will not be repeated.

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Abstract

本公开提供一种显示面板、其制作方法及显示装置，显示面板包括显示区，显示区中设置有至少一个待挖孔区域；环形隔离区，包围待挖孔区域设置，位于待挖孔区域与包围待挖孔区域的显示区之间；环形隔离区包括包围待挖孔区域设置的第一环形挡墙；显示面板包括：衬底基板，电致发光层，封装层，以及填充层。封装层包括叠层设置的第一无机封装层、第二无机封装层和有机封装层；有机封装层包括第一有机封装层部和第二有机封装层部，第一有机封装层部覆盖待挖孔区域，第二有机封装层部覆盖显示区。填充层在衬底基板的正投影位于待挖孔区域和环形隔离区在衬底基板的正投影的范围之内。

Description

显示面板、其制作方法及显示装置
本申请要求在2021年3月15日提交的申请号为PCT/CN2021/080752、申请名称为“显示面板、其制作方法及显示装置”的专利申请的优先权，其全部内容通过引用结合在本申请中。
技术领域
本公开涉及显示技术领域，尤其涉及一种显示面板、其制作方法及显示装置。
背景技术
近年来，随着显示技术的不断发展，为了提高显示屏的屏占比，通常不会在显示屏的边缘来设置功能器件，而是将显示屏的整面设置为显示区，并且在屏内挖孔以安装相应的功能器件。然而挖孔位置的膜层相比其它区域来说相对较薄弱，因此在对显示屏进行剥离或弯折时，挖孔位置的膜层容易出再分离而产生彩虹纹的现象。
发明内容
本公开实施例的第一方面提供一种显示面板的制作方法，其中，所述显示面板包括显示区，所述显示区包围的至少一个待挖孔区域，以及位于所述待挖孔区域与所述显示区之间的环形隔离区；所述制作方法包括：
在衬底基板上的所述环形隔离区内形成包围所述待挖孔区域的环形挡墙；
在所述衬底基板和所述环形挡墙之上形成电致发光层；
在所述电致发光层背离所述衬底基板的一侧形成封装层；
在所述待挖孔区域和所述环形隔离区内的所述封装层背离所述电致发光层的一侧形成填充层；
其中，所述封装层包括叠层设置的第一无机封装层、第二无机封装层和 有机封装层；所述有机封装层包括第一有机封装层部和第二有机封装层部，所述第一有机封装层部覆盖所述待挖孔区域，位于所述待挖孔区域对应的所述第一无机封装层和所述第二无机封装层之间；所述第二有机封装层部覆盖所述显示区，位于所述显示区对应的所述第一无机封装层和所述第二无机封装层之间。
本公开一些实施例中，所述第一有机封装层部的厚度小于所述环形挡墙的高度。
本公开一些实施例中，所述有机封装层采用喷墨打印法进行制作。
本公开一些实施例中，在形成所述环形挡墙之前，还包括：
在所述衬底基板上形成柔性衬底；
所述在衬底基板上形成所述环形挡墙，包括：
在所述柔性衬底背离所述衬底基板的一侧形成驱动线路层的同时形成所述环形挡墙。
本公开一些实施例中，所述在所述柔性衬底背离所述衬底基板的一侧形成驱动线路层的同时形成所述环形挡墙，包括：
在所述柔性衬底背离所述衬底基板一侧的所述环形隔离区内形成包围所述待挖孔区域的第一环形挡墙、包围所述第一环形挡墙的第二环形挡墙、位于所述第一环形挡墙和所述第二环形挡墙之间以及包围所述第二环形挡墙的多个第二环形隔离部。
本公开一些实施例中，所述在所述柔性衬底背离所述衬底基板的一侧形成驱动线路层，包括：
在所述衬底基板上形成缓冲层；
在所述缓冲层背离所述衬底基板的一侧形成有源层的图形；
在所述有源层背离所述缓冲层的一侧形成栅极绝缘层；
在所述栅极绝缘层背离所述有源层的一侧形成栅极金属层的图形；
在所述栅极金属层背离所述栅极绝缘层的一侧形成层间绝缘层；
在所述层间绝缘层背离所述栅极金属层的一侧形成源漏金属层的图形；
在所述源漏金属层背离所述层间绝缘层的一侧形成平坦化层。
本公开一些实施例中，所述环形隔离部为环形隔离柱，所述方法还包括：
在形成所述源漏金属层的图形的同时形成所述环形隔离柱。
本公开一些实施例中，所述环形隔离部为环形隔离槽，所述方法还包括：
对形成在所述环形隔离区内的所述柔性衬底、所述缓冲层、所述栅极绝缘层及所述层间绝缘层进行刻蚀，形成所述环形隔离槽。；
本公开一些实施例中，所述在所述衬底基板和所述环形挡墙之上形成电致发光层，包括：
在所述平坦化层背离所述源漏金属层的一侧形成第一电极层的图形；
在所述平坦化层背离所述源漏金属层的一侧形成像素界定层的图形；
在所述像素界定层背离所述平坦化层的一侧形成支撑部的图形；
在所述第一电极层背离所述平坦化层的一侧形成发光层；
在所述发光层背离所述第一电极层的一侧形成第二电极层；
其中，所述像素界定层的图形在所述衬底基板的正投影与所述第一电极层的图形在所述衬底基板的正投影部分交叠；
所述第一环形挡墙和所述第二环形挡墙与所述平坦化层、所述像素界定层以及所述支撑部中的至少一个膜层同层。
本公开一些实施例中，所述填充层在所述衬底基板的正投影与所述第二有机封装层部在所述衬底基板的正投影存在交叠区域。
本公开一些实施例中，所述第二有机封装层部覆盖所述第二环形隔离柱以及所述第二环形挡墙背离所述第一环形挡墙一侧的侧壁。
本公开一些实施例中，所述填充层背离所述衬底基板一侧的表面高于所述显示区内的所述封装层背离所述衬底基板一侧的表面。
本公开一些实施例中，还包括：
在所述填充层和所述封装层背离所述衬底基板的一侧形成阻挡层；
在所述阻挡层背离所述衬底基板的一侧形成触控功能层；
在所述触控功能层背离所述阻挡层的一侧形成保护层；
其中，所述触控功能层包括触控电极的图形，所述触控电极的图形在所述衬底基板的正投影与所述填充层在所述衬底基板的正投影互不交叠。
本公开一些实施例中，在所述阻挡层背离所述衬底基板的一侧形成触控功能层，包括：
在所述阻挡层背离所述衬底基板的一侧形成第一金属层；
在所述第一金属层背离所述阻挡层的一侧形成触控绝缘层；
在所述触控绝缘层背离所述第一金属层的一侧形成第二金属层；
其中，所述第一金属层包括第一触控电极连接部的图形，所述第二金属层包括第一触控电极、第二触控电极以及第二触控电极连接部的图形；
所述第一触控电极连接部在所述衬底基板的正投影与所述填充层在所述衬底基板的正投影互不交叠。
本公开一些实施例中，还包括：
将所述柔性衬底在所述衬底基板上剥离；
对剥离后的显示面板中的所述待挖孔区域进行挖孔。
本公开实施例的第二方面提供一种显示面板，采用上述任一制作方法制作而成；
所述显示面板包括：
柔性衬底，所述柔性衬底包括显示区，所述显示区包围至少一个挖孔区域，以及位于所述显示区和所述挖孔区域之间的环形隔离区；
驱动线路层，位于所述柔性衬底之上；
电致发光层，位于所述驱动线路层背离所述柔性衬底的一侧；
封装层，位于所述电致发光层背离所述柔性衬底的一侧；
填充层，位于所述封装层背离所述电致发光层的一侧，所述填充层位于所述环形隔离内；
阻挡层，位于所述封装层和所述填充层背离所述电致发光层的一侧；和
触控功能层，位于所述阻挡层背离所述封装层的一侧；其中，
所述填充层背离所述柔性衬底一侧的表面高于所述显示区内的所述封装 层背离所述柔性衬底一侧的表面；
所述触控功能层包括触控电极的图形，所述触控电极的图形在所述柔性衬底的正投影与所述填充层在所述柔性衬底的正投影互不交叠。
本公开一些实施例中，还包括：
保护层，位于所述触控功能层和所述阻挡层背离所述封装层的一侧；其中，
所述驱动线路层包括：
缓冲层，位于所述柔性衬底之上；
有源层，位于所述缓冲层背离所述柔性衬底的一侧；
栅极绝缘层，位于所述有源层和所述缓冲层背离所述柔性衬底的一侧；
栅极金属层，位于所述栅极绝缘层背离所述有源层的一侧；
层间绝缘层，位于所述栅极金属层背离所述栅极绝缘层的一侧；
源漏金属层，位于所述层间绝缘层背离所述栅极金属层的一侧；
平坦化层，位于所述源漏金属层背离所述层间绝缘层的一侧；
所述电致发光层包括：
第一电极层，位于所述平坦化层背离所述源漏金属层的一侧，所述第一电极层包括多个第一电极；
像素界定层，位于所述平坦化层背离所述源漏金属层的一侧，所述像素界定层位于各所述第一电极之间的间隔位置；
支撑部，位于所述像素界定层背离所述平坦化层的一侧；
发光层，位于所述第一电极背离所述平坦化层的一侧；
第二电极层，位于所述发光层和所述像素界定层背离所述第一电极层的一侧；
所述封装层包括：
第一无机封装层，位于所述第二电极层背离所述发光层的一侧；
有机封装层，位于所述第一无机封装层背离所述第二电极层的一侧；
第二无机封装层，位于所述有机封装层背离所述第一封装层的一侧；其 中，
所述第一无机封装层和所述第二无机封装层在所述柔性衬底的正投影覆盖所述显示区和所述环形隔离区；所述有机封装层在所述柔性衬底的正投影位于所述显示区内；
所述触控功能层包括：
第一金属层，位于所述阻挡层背离所述封装层的一侧；
触控绝缘层，位于所述第一金属层背离所述阻挡层的一侧；
第二金属层，位于所述触控绝缘层背离所述第一金属层的一侧；其中，
所述第一金属层包括第一触控电极连接部的图形，所述第二金属层包括第一触控电极、第二触控电极以及第二触控电极连接部的图形，所述第一触控电极连接部通过所述触控绝缘层的过孔与所述第一触控电极电连接；
所述第一触控电极连接部的图形在所述柔性衬底的正投影与所述填充层在所述柔性衬底的正投影互不交叠。
本公开一些实施例中，所述环形隔离区包括：
环形挡墙，包围所述挖孔区域设置；
至少一个第一环形隔离部，被所述环形挡墙包围设置；
至少一个第二环形隔离部，包围所述环形挡墙设置；其中，
所述环形挡墙与所述平坦层、所述像素界定层和所述支撑柱中的至少一层同层设置。
本公开一些实施例中，所述有机封装层覆盖所述第二环形隔离部以及所述环形挡墙面向所述显示区一侧的侧壁。
本公开一些实施例中，所述填充层在所述柔性衬底的正投影与所述有机封装层在所述柔性衬底的正投影存在交叠区域。
本公开一些实施例中，所述填充层覆盖所述环形挡墙，所述填充层靠近所述显示区一侧的边缘不超过距离所述显示区最近的所述第二环形隔离部的边缘。
本公开一些实施例中，所述第一环形隔离部和所述第二环形隔离部均为 环形隔离柱；
所述环形隔离柱与所述源漏金属层同层设置。
本公开一些实施例中，所述第一环形隔离部和所述第二环形隔离部均为环形隔离槽；
所述环形隔离槽贯穿所述缓冲层、所述栅极绝缘层和所述层间绝缘层，在所述柔性衬底上形成环形凹槽。
本公开实施例的第三方面提供一种显示装置，包括上述显示面板。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对本公开实施例中所需要使用的附图作简单地介绍，显而易见地，下面所介绍的附图仅仅是本公开的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1为本公开实施例提供的显示面板的平面结构示意图；
图2为本公开实施例提供的显示面板的制作方法的流程图；
图3为图1中I-I’区域的截面结构示意图；
图4为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之一；
图5为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之二；
图6为本公开实施例提供的显示面板的截面结构示意图之一；
图7为本公开实施例提供的显示面板的截面结构示意图之二；
图8为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之三；
图9为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之四；
图10为本公开实施例提供的触控功能层的截面结构示意图；
图11为本公开实施例提供的显示面板在挖孔区域的截面结构示意图之一；
图12为本公开实施例提供的显示面板在挖孔区域的截面结构示意图之二。
具体实施方式
为使本公开的上述目的、特征和优点能够更为明显易懂，下面将结合附图和实施例对本公开做进一步说明。然而，示例实施方式能够以多种形式实施，且不应被理解为限于在此阐述的实施方式；相反，提供这些实施方式使得本公开更全面和完整，并将示例实施方式的构思全面地传达给本领域的技术人员。在图中相同的附图标记表示相同或类似的结构，因而将省略对它们的重复描述。本公开中所描述的表达位置与方向的词，均是以附图为例进行的说明，但根据需要也可以做出改变，所做改变均包含在本公开保护范围内。本公开的附图仅用于示意相对位置关系不代表真实比例。
随着显示技术的发展，有机发光二极管(Organic Light-emitted Diode，简称OLED)显示技术展现出了巨大的潜力。OLED优良的显示性能使得其具有广泛的应用空间。与此同时，OLED显示面板具有自发光的特性，因此更加适应于制作成柔性显示屏。与常规的显示屏相比，柔性显示屏具有可弯曲、柔韧性佳的特性，提高了显示设备的便携性。
柔性显示屏通常会在刚性衬底上进行制作，然而再将柔性显示屏从刚性衬底上剥离。而为了提高显示屏的屏占比，目前的显示屏会在屏内挖孔以安装功能器件，由于挖孔位置的膜层相比其它区域来说相对较薄弱，因此在对显示屏进行剥离或弯折时，挖孔位置的膜层容易出再分离而产生彩虹纹的现象。
有鉴于此，本公开实施例提供一种显示面板的制作方法。图1为本公开实施例提供的显示面板的平面结构示意图。
如图1所示，显示面板可以划分为：显示区AA、待挖孔区域H和环形隔离区VA1和周边区VA2。
其中，显示区AA占据显示面板大部分区域，用于进行图像显示；周边 区VA2围绕显示区AA设置，周边区VA2用于布线以及连接驱动元件。
如图1所示，显示区AA中设置有至少一个待挖孔区域H，该待挖孔区域H在显示面板制作完成之后会进行挖孔处理，以使显示面板在显示区AA内形成贯穿的通孔。
显示面板形成的通孔用于设置图像采集结构、摄像头、听筒、光线传感器中的至少一种。
在挖孔区域H和包围该待挖孔区域H的显示区AA之间设置有环形隔离区VA1，该环形隔离区VA1包围待挖孔区域H设置，在挖孔位置起到隔离显示区AA的作用。
图2为本公开实施例提供的显示面板的制作方法的流程图。
如图2所示，本公开实施例提供的显示面板的制作方法，包括：
S10、在衬底基板上的环形隔离区内形成包围待挖孔区域的环形挡墙；
S20、在衬底基板和环形挡墙之上形成电致发光层；
S30、在电致发光层背离衬底基板的一侧形成封装层；
S40、在待挖孔区域和环形隔离区内的封装层背离电致发光层的一侧形成填充层。
其中，封装层包括叠层设置的第一无机封装层、第二无机封装层和有机封装层；有机封装层包括第一有机封装层部和第二有机封装层部，第一有机封装层部覆盖待挖孔区域，位于待挖孔区域对应的第一无机封装层和第二无机封装层之间；第二有机封装层部覆盖显示区，位于显示区对应的第一无机封装层和第二无机封装层之间。
而本公开实施例提供的显示面板可以为柔性显示面板，因此在形成第一环形挡墙之前，还包括：在衬底基板上形成柔性衬底。
除此之外，在衬底基板上形成柔性衬底之后，在形成电致发光层之前，还包括：在柔性衬底背离衬底基板的一侧形成驱动线路层，在柔性衬底背离衬底基板一侧的环形隔离区内形成环形挡墙。
图3为图1中I-I’区域的截面结构示意图。
如图3所示，采用本公开实施例提供的显示面板的制作方法制作而成的显示面板包括：衬底基板11、驱动线路层12、电致发光层13和封装层14。
衬底基板11，位于显示面板的底部，具有支撑和承载作用。衬底基板11可以采用玻璃基板等，在此不做限定。
在制作柔性显示面板时，会在衬底基板11上设置一层柔性衬底10，用于作为柔性显示面板的衬底，此时衬底基板11在制作过程中起到支撑作用，待显示面板制作完成之后，将柔性衬底10与衬底基板11剥离，即可得到柔性显示面板。
驱动线路层12，位于衬底基板11之上，驱动线路层12中包括多个金属层和多个绝缘层，每个金属层均包括设定的图形，由此构成薄膜晶体管(Thin Film Transistor，简称TFT)电容、电阻以及信号线等结构，用于驱动电致发光层13进行出射光线。
由于待挖孔区域H最终会被挖除，因此待挖孔区域之上并不会形成驱动线路层12的图形，待挖孔区域H在衬底基板11的正投影与驱动线路层12中的金属层在衬底基板11的正投影不存在交叠区域。
环形隔离区VA1用于将设置通孔的位置与显示区AA相隔一定的距离，以避免对显示屏进行挖孔造成对显示区AA的影响。在环形隔离区VA1可以设置多个环形挡墙，用于阻隔通孔向显示区AA传递水汽和氧气以造成显示区AA内显示器件的损坏。
如图3所示，上述的环形挡墙至少包括第一环形挡墙d1，该第一环形挡墙d1限定了待挖孔区域H的范围，在最终的挖孔阶段，会将第一环形挡墙d1包围的区域H挖除，以形成上述通孔。
环形隔离区VA1内设置的环形挡墙均采用驱动线路层中的至少一个相应膜层采用相同的构图工艺形成。
电致发光层13，位于衬底基板11以及第一环形挡墙d1之上。本公开实施例提供的显示面板可以为OLED面板，电致发光层13中包含多个有机发光二极管器件，有机发光二极管器件包括与驱动线路层12连接的第一电极，与 第一电极相对设置的第二电极，以及位于第一电极和第二电极之间的有机发光层，通过向第一电极和第二电极施加电压，可以驱动电子和空穴在有机发光层中产生激子，激子受激发射，实现光线的出射。
如图3所示，电致发光层13在衬底基板11的正投影覆盖待挖孔区域H、环形隔离区VA1以及显示区AA所在的全部区域。而在显示面板制作完成之后，会将待挖孔区域H全部挖除，因此在最终形成的通孔内不存在电致发光层13。
封装层14，位于电致发光层13背离衬底基板11的一侧。电致发光层13中有机发光材料以及有机功能材料遇水氧会被破坏，进而严重影响使用寿命。为了避免有机材料与水氧接触在电致发光层13背离衬底基板11的一侧设置封装层14。
如图3所示，封装层14通常包括叠层交替设置的无机封装层和有机封装层142，其中无机封装层可以采用氧化硅或氮化硅等材料，具有良好的隔绝水氧的作用，而在无机封装层之间设置有机封装层142则可以增加封装层14的柔韧性，适用于柔性显示面板。其中，无机封装层可以采用化学气相沉积工艺形成，有机封装层可以采用喷墨打印工艺形成。
封装层14可以包括两层无机封装层和一层有机封装层142，无机封装层为第一无机封装层141a和第二无机封装层141b，有机封装层142位于第一无机封装层141a和第二无机封装层141b之间。
通常情况下，无机封装层141a和141b会覆盖显示面板的所有区域，包括图3中的待挖孔区域H、环形隔离区VA1以及显示区AA，而有机封装层142仅覆盖显示区AA所在的区域。
在这种情况下，由于在待挖孔区域H内相较于其它位置的膜层较少，因此在将柔性衬底10与衬底基板11进行剥离时，待挖孔区域H内的强度差，该区域内的膜层受外力拉扯时容易相互分离，从而使得该区域容易形成彩虹纹的问题。
图4为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之 一。
为了避免上述问题，如图4所示，本公开实施例在环形隔离区VA1以及待挖孔区域H的封装层14背离衬底基板11的一侧还会设置一层填充层15。
如图4所示，填充层15在衬底基板11的正投影位于待挖孔区域H和环形隔离区VA1在衬底基板11的正投影的范围之内。填充层15用于填充待挖孔区域H与显示区AA之间形成的断差，起到增强待挖孔区域H内强度的作用。在待挖孔区域H形成填充层15之后，再将柔性衬底10与衬底基板11进行剥离，可以有效降低膜层分离的问题产生。
填充层15可以采用有机材料进行制作，例如可以采用有机树脂材料，厚度为2μm-4μm。有机材料通常具有较大的厚度，可以填充待挖孔区域H形成的膜层断差。
然而目前的显示面板均具有触控功能，对于OLED面板来说，可以在制作完成封装层14之后，采用多层一体化触控(Flexible Multi-Layer On Cell，简称FMLOC)技术在封装层14上制作金属网格触控电极层，无需外挂触控板。该工艺可以减小屏幕厚度，进而有利于折叠；同时没有贴合公差，可减小边框宽度。
在进行FMLOC工艺之前，需要对显示面板进行烘烤，填充层15通常采用有机材料进行制作，有机材料在进行烘烤过程中会收缩，而在待挖孔H区域内填充层15的厚度最大，因此填充层15在收缩过程中会对待挖孔H区域内的底层膜层产生较大的拉力，仍然可能导致膜层的分离，进而产生彩虹纹的问题。
图5为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之二。
为了避免上述问题，如图5所示，在对电致发光层13进行封装层时，本公开实施例在待挖孔区域H内一并形成有机封装层，从而减小填充层15在待挖孔区域H的厚度，减小填充层15在收缩过程中对待挖孔区域H内下方膜层的拉扯作用，从而完全避免膜层分离而造成的彩虹纹问题。
本公开实施例将封装层中的有机封装层分为两部分，分别为第一有机封装层部142a和第二有机封装层部142b；其中，第一有机封装层部142a覆盖待挖孔区域H，位于待挖孔区域H对应的第一无机封装层141a和第二无机封装层141b之间；第二有机封装层部142b覆盖显示区AA，位于显示区AA对应的第一无机封装层141a和第二无机封装层141b之间。
第一有机封装层部142a和第二有机封装层142b采用一次工艺形成，有机封装层可以采用喷墨打印技术形成在待挖孔区域H和显示区AA内。第一有机封装层部142a注入到待挖孔区域H之后，再形成填充层15时可以有效减小填充层15在待挖孔区域H的厚度，且填充层15在收缩时，不会直接接触下方的无机封装层141a和141b，因此不会造成膜层之间的分离，避免彩虹纹的现象产生。
在制作第一环形挡墙d1时，可以采用驱动线路层12中的多个膜层堆叠形成，以使第一环形挡墙d1具有一定的高度，那么在喷墨打印有机封装层的材料时，可以使有机封装层的液体被限制在第一环形挡墙d1的范围之内，使第一环形挡墙d1的高度大于有机封装层的厚度，从而避免有机封装层的液体材料溢出到环形隔离区VA1中，避免有机封装层产生向显示区AA延伸的通路，从而阻隔水氧进入到显示区AA内。
在本公开实施例中，在柔性衬底背离衬底基板一侧的环形隔离区内形成包围待挖孔区域的第一环形挡墙的同时，还会形成包围第一环形挡墙的第二环形挡墙、位于第一环形挡墙和第二环形挡墙之间以及包围第二环形挡墙的多个环形隔离部，为了区别不同位置的隔离部，本公开实施例将位于第一环形挡墙和第二环形挡墙之间的环形隔离部称之为第一环形隔离部，将包围第二环形挡墙的环形隔离部称之为第二环形隔离部。
如图5所示，在本公开实施例提供的显示面板中，在环形隔离区VA1内还包括：第二环形挡墙d2，至少一个第一环形隔离部c1和至少一个第二环形隔离部c2。
第二环形挡墙d2，包围第一环形挡墙d1设置。第一环形挡墙d1和第二 环形挡墙d2可以为同心结构，且第一环形挡墙d1与第二环形挡墙d2之间相距设定的距离。
在第一环形挡墙d1与第二环形挡墙d2之间还设置有至少一个第一环形隔离部c1；包围第二环形挡墙d2还设置有至少一个第二环形隔离部c2。
如上所述，在环形隔离区VA1内需要隔断有机封装层，以避免形成通路使外界水氧可以进入到显示区AA。第一环形挡墙d1用于将第一有机封装层部142a限定在第一环形挡墙d1内的待挖孔区域H，而第二环形挡墙d2则用于将第二有机封装层部142b限定在显示区AA内，从而将有机封装层在环形隔离区VA1隔断。
而在第一环形挡墙d1和第二环形挡墙d2之间设置至少一个第一环形隔离部c1，在第二环形挡墙d2的外侧设置至少一个第二环形隔离部c2，可以起到阻隔水氧，防止裂纹延伸，以及割断电致发光层13的作用。
具体地，在柔性衬底背离衬底基板的一侧形成驱动线路层，包括：
在衬底基板上形成缓冲层；
在缓冲层背离衬底基板的一侧形成有源层的图形；
在有源层背离缓冲层的一侧形成栅极绝缘层；
在栅极绝缘层背离有源层的一侧形成栅极金属层的图形；
在栅极金属层背离栅极绝缘层的一侧形成层间绝缘层；
在层间绝缘层背离栅极金属层的一侧形成源漏金属层的图形；
在源漏金属层背离层间绝缘层的一侧形成平坦化层。
图6为本公开实施例提供的显示面板的截面结构示意图之一，图7为本公开实施例提供的显示面板的截面结构示意图之二。为了便于说时，图6和图7仅示出了待挖孔区域H一侧的环形挡墙和环形隔离柱的结构。
如图6和图7所示，驱动线路层12包括：
缓冲层121，位于衬底基板11之上。缓冲层121可以对衬底基板11和上方膜层之间的应力进行匹配，也可以提高显示面板的密封性能。缓冲层121可以采用无机材料进行制作，在此不做限定。
有源层122，位于缓冲层121背离衬底基板11的一侧。有源层122为用于制作薄膜晶体管的一个功能性膜层，有源层122具有预设的图形。有源层122包括通过掺杂N型离子或P型离子而形成的源极区域和漏极区域，在源极区域和漏极区域之间的区域是不进行掺杂的沟道区。
栅极绝缘层123，位于有源层122背离缓冲层121的一侧。栅极绝缘层123用于对有源层122上方金属层进行绝缘。栅极绝缘层123的材料可以采用氧化硅、氮化硅等，在此不做限定。
栅极金属层124，位于栅极绝缘层123背离有源层122的一侧。栅极金属层124具有包括栅极以及栅线的图形。栅极金属层124可以采用单层或多层金属的叠层结构，在此不做限定。
层间绝缘层125，位于栅极金属层124背离栅极绝缘层123的一侧。层间绝缘层125用于对栅极金属层124上方金属层进行绝缘。栅极绝缘层125的材料可以采用氧化硅、氮化硅等，在此不做限定。
源漏金属层126，位于层间绝缘层125背离栅极金属层124的一侧。源漏金属层126具有包括源极、漏极和数据线的图形。源漏金属层126可以采用单层或多层金属的叠层结构，在此不做限定。
有源层、栅极、源极和漏极构成薄膜晶体管结构。
平坦化层127，位于源漏金属层126背离层间绝缘层125的一侧。平坦化层127用于源漏金属层126进行绝缘，同时将膜层表面平整化，有利于在平坦化层127之上再形成其它器件。平坦化层127可以采用无机材料或有机材料进行制作，在此不做限定。平坦化层127的表面具有暴露出漏极的过孔。
在衬底基板11之上形成上述驱动线路层12之后，在驱动线路层12之上再制作电致发光层13。
具体地，在衬底基板和第一环形挡墙之上形成电致发光层，包括：
在平坦化层背离源漏金属层的一侧形成第一电极层的图形；
在平坦化层背离源漏金属层的一侧形成像素界定层的图形；
在像素界定层背离平坦化层的一侧形成支撑部的图形；
在第一电极层背离平坦化层的一侧形成发光层；
在发光层背离第一电极层的一侧形成第二电极层。
如图6和图7所示，电致发光层13具体包括：
第一电极层131，位于平坦化层127背离源漏金属层126的一侧。第一电极层131包括多个相互分立的第一电极，每个第一电极通过平坦化层127的过孔与下方的薄膜晶体管的漏极电连接，以向第一电极传输驱动信号。第一电极层131的材料可以采用氧化铟锡等透明导电材料，在此不做限定。
像素界定层132，位于平坦化层127背离源漏金属层126的一侧，且位于各第一电极之间的间隔位置。像素界定层132用于将各第一电极所在的区域分隔开，相较于第一电极层131以及其它有机功能膜层具有较大的厚度。
支撑部(图中未示出)，位于像素界定层132背离平坦化层127的一侧。支撑部用于对显示面板上方的其它部件进行支撑。
发光层133，位于第一电极背离平坦化层127的一侧。形成在不同第一电极之上的发光层133可以采用相同的材料或不同的材料。本公开实施例提供的显示面板中，发光层133可以采用出射不同颜色的有机发光材料，发光层仅形成在对应的第一电极之上；或者，发光层133也可以采用出射白光的有机发光材料，发光层整层设置，再通过设置彩膜基板，以实现不同颜色光线的出射。
第二电极层134，位于发光层133、像素界定层132、支撑部背离平坦化层127的一侧。第二电极层134整层设置，第二电极层134的材料可以采用金属银等导电材料，在此不做限定。
其中，第一环形挡墙d1和第二环形挡墙d2可以采用平坦化层127、像素界定层132以及支撑部中的至少一个膜层进行制作。
在一些实施例中，如图6所示，第一环形隔离部c1和第二环形隔离部c2可以采用环形隔离柱的形式。环形隔离柱可以采用源漏金属层126进行制作，源漏金属层126通常采用叠层金属进行制作，使如可以采用钛/铝/钛三层金属进行制作，因此环形隔离柱也可以采用钛/铝/钛三层金属进行制作。由于环形 隔离柱背离衬底基板11一侧的边缘边角较锐利，因此环形隔离柱可以起到割断电致发光层13的作用，从而使得显示区AA与环形隔离区VA1内的电致发光层13断开。
在一些实施例中，如图7所示，第一环形隔离部c1和第二环形隔离部c2还可以采用环形隔离槽的形式。环形隔离槽是在形成了柔性衬底10、缓冲层121、栅极绝缘层123和层间绝缘层125之后，对上述膜层进行刻蚀，从而形成环形隔离槽的结构。环形隔离槽具有较大的深度，那么在形成电致发光层13时，环形隔离槽可以使电致发光层13断开，从而使得显示区AA与环形隔离区VA1内的电致发光层13断开。
如图5所示，填充层15在衬底基板11的正投影与第二有机封装层部142b在衬底基板11的正投影存在交叠区域。
填充层15用于对待挖孔区域H和环形隔离区VA1进行膜层填充，从而增加膜层原本较薄膜区域的强度，将填充层15覆盖待挖孔区域H和环形隔离区VA1可以增强这两个区域内的厚度，避免在将柔性衬底10与衬底基板11剥离时造成的膜层分离问题。
而第二环形挡墙d2可以在形成第二有机封装层部142b时限定有机封装材料的喷墨打印范围，避免有机封装材料溢出第二环形挡墙d2，因此在本公开实施例中，第二有机封装层部142b可以覆盖第二环形隔离柱c2以及第二环形挡墙d2背离第一环形挡墙d1一侧的侧壁，而不会超出第二环形挡墙d2的范围。
在形成了封装层14和填充层15之后，本公开实施例提供的显示面板的制作方法，还包括：
在填充层和封装层背离衬底基板的一侧形成阻挡层；
在阻挡层背离衬底基板的一侧形成触控功能层；
在触控功能层背离阻挡层的一侧形成保护层；
其中，触控功能层包括触控电极的图形，触控电极的图形在衬底基板的正投影与填充层在衬底基板的正投影互不交叠。
由于填充层15采用有机材料进行制作，因此填充层15通常具有较大的厚度，如图5所示，填充层15背离衬底基板11一侧的表面高于显示区AA内的封装层14背离衬底基板11一侧的表面。那么填充层15的边缘会产生较锐利的边缘，在形成之后触控功能层时，可能会将触控功能层中的触控电极割断。
图8为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之三，图9为本公开实施例提供的显示面板在待挖孔区域的截面结构示意图之四。
为了避免上述问题，如图8和图9所示，阻挡层16，位于封装层14和填充层15背离衬底基板11的一侧。阻挡层16起到电致发光层13与触控电极之间的阻隔作用。阻挡层16可以采用无机材料进行制作，在此不做限定。
触控功能层17，位于阻挡层16背离衬底基板11的一侧。触控功能层17包括触控电极t。触控功能层17通常包括多个金属层，在金属层制作触控电极的图形，从而实现触控功能。
保护层18，位于触控功能层17背离阻挡层16的一侧。保护层18用于对触控功能层17绝缘保护，同时具有平坦化的作用。保护层18可以采用有机材料进行制作，例如可以采用有机树脂材料进行制作，在此不做限定。
如图6所示，触控电极t在衬底基板11的正投影与填充层15在衬底基板11的正投影互不交叠。将填充层15的范围向环形隔离区VA1缩进，并且避免触控电极t的图形与填充层15相互交叠，由此可以避免触控电极t被填充层15的边缘割开，保证触控电极t的信号连通信号。
具体地，在阻挡层背离衬底基板的一侧形成触控功能层，包括：
在阻挡层背离衬底基板的一侧形成第一金属层；
在第一金属层背离阻挡层的一侧形成触控绝缘层；
在触控绝缘层背离第一金属层的一侧形成第二金属层；
其中，第一金属层包括第一触控电极连接部的图形，第二金属层包括第一触控电极、第二触控电极以及第二触控电极连接部的图形；
第一触控电极连接部在衬底基板的正投影与填充层在衬底基板的正投影互不交叠。
图10为本公开实施例提供的触控电极层的截面结构示意图。
如图10所示，触控功能层17包括：
第一金属层171，位于阻挡层16背离衬底基板11的一侧。第一金属层包括第一触控电极连接部a1的图形。
触控绝缘层172，位于第一金属层171背离阻挡层16的一侧。触控绝缘层172用于对金属层进行绝缘，通常可以采用无机材料进行制作，在此不做限定。
第二金属层173，位于触控绝缘层172背离第一金属层171的一侧。第二金属层173包括第一触控电极a2、第二触控电极(图中未示出)以及第二触控电极连接部b1的图形；位于第一金属层171的第一触控电极连接部通a1过触控绝缘层172的过孔与位于第二金属层的第一触控电极a2连接。
其中，第一触控电极连接部a1在衬底基板11的正投影与填充层15在衬底基板11的正投影互不交叠。第一触控电极、第二触控电极通常采用金属网格结构，在形成第二金属层173的图形时会对待挖孔区域H和环形隔离区VA1进行挖空设计，因此在待挖孔区域H和环形隔离区VA1不存在金属网络的图形。
在形成了上述显示面板之后，本公开实施例提供的显示面板的制作方法，还包括：
将柔性衬底在衬底基板上剥离；
对剥离后的显示面板中的待挖孔区域进行挖孔。
本公开实施例在对电致发光层进行封装层时，在待挖孔区域内一并形成有机封装层，从而减小填充层在待挖孔区域的厚度，减小填充层在收缩过程中对待挖孔区域内下方膜层的拉扯作用，从而完全避免在对柔性衬底进行剥离时而造成的彩虹纹问题。
如图8和图9所示，在对显示面板进行挖孔时，切割线位于第一环形挡 墙d1和与之相邻的第一环形隔离部c1之间，因此在对显示屏进行挖孔之后，如图8和图9中的两条虚线之间第一有机封装层部141a和包围第一有机封装层部的第一环形挡墙d1均被挖除。
基于同一发明构思，本公开实施例还提供一种显示面板，该显示面板采用上述任一制作方法制作而成。本公开实施例提供的显示面板在对电致发光层进行封装层时，在待挖孔区域内一并形成有机封装层，从而减小填充层在待挖孔区域的厚度，减小填充层在收缩过程中对待挖孔区域内下方膜层的拉扯作用，从而完全避免在对柔性衬底进行剥离时而造成的彩虹纹问题。
图11为本公开实施例提供的显示面板在挖孔区域的截面结构示意图之一。
如图11所示，显示面板包括：柔性衬底10、驱动线路层12、电致发光层13、封装层14、填充层15、阻挡层16、触控功能层17和保护层18。
其中，柔性衬底10包括显示区AA，显示区AA包围至少一个挖孔区域H’，以及位于显示区AA和挖孔区域H’之间的环形隔离区VA1。
驱动线路层12位于柔性衬底10之上；电致发光层13位于驱动线路层12背离柔性衬底10的一侧；封装层14位于电致发光层13背离柔性衬底10的一侧；填充层15位于封装层14背离电致发光层13的一侧；阻挡层16位于封装层14和填充层15背离电致发光层13的一侧；触控功能层17位于阻挡层16背离封装层14的一侧；保护层18位于触控功能层17和阻挡层16背离封装层14的一侧。
如图11和图12所示，采用上述制作方法制作而成的显示面板中的填充层15位于环形隔离VA1内，且填充层15背离柔性衬底10一侧的表面高于显示区AA内的封装层14背离柔性衬底10一侧的表面；那么在制作触控功能层17时，填充层15形成的边缘可能会将触控功能层中的触控电极割断。
为了避免上述问题，本公开实施例中的填充层15在制作时向远离显示区AA的方向缩进，并且可以将触控功能层中与填充层15相邻的触控部件的宽度减小，从而使得填充层15与触控电极的图形互不交叠。
本公开实施例提供的上述显示面板中各膜层的具体结构可以参见上述详 细介绍，在此不做赘述。
如图11和图12所示，在环形隔离区VA1内还包括：
环形挡墙d2，包围挖孔区域H’设置；
至少一个第一环形隔离部c1，被环形挡墙d2包围设置；
至少一个第二环形隔离部c2，包围环形挡d2墙设置。
在对电致发光层13进行封装时，封装层14包括第一无机封装层141a、第二无机封装层141b和位于第一无机封装层141a和第二无机封装层141b之间的有机封装层142。环形挡墙d2可以将有机封装层142的材料限制在显示区AA内。
如图11和图12所示，有机封装层142覆盖第二环形隔离部c2以及环形挡墙d2面向显示区AA一侧的侧壁，但不超过环形挡墙d2限定的范围。
第一环形隔离部c1和第二环形隔离部c2用于将电致发光层13割断，从而可以将显示区AA内与环形隔离区VA1的电致发光层断开，阻断水氧传输路径，避免水氧进入到显示区AA的有机发光二极管器件中。
如图11和图12所示，填充层15在柔性衬底10的正投影与有机封装层142在柔性衬底10的正投影存在交叠区域。填充层15覆盖环形挡墙d2，但填充层15靠近显示区AA一侧的边缘不超过距离显示区AA最近的第二环形隔离部c2的边缘。
为了避免填充层15对显示区AA内器件的影响，并且避免填充层15对触控电极图形的破坏，将填充层15的边缘限制在最近显示区AA最近的第二环形隔离部c2的范围之内。
如图11所示，第一环形隔离部c1和第二环形隔离部c2可以采用环形隔离柱的形式。环形隔离柱可以采用源漏金属层进行制作，源漏金属层通常采用叠层金属进行制作，使如可以采用钛/铝/钛三层金属进行制作，因此环形隔离柱也可以采用钛/铝/钛三层金属进行制作。由于环形隔离柱背离柔性衬底10一侧的边缘边角较锐利，因此环形隔离柱可以起到割断电致发光层13的作用，从而使得显示区AA与环形隔离区VA1内的电致发光层13断开。
如图12所示，第一环形隔离部c1和第二环形隔离部c2还可以采用环形隔离槽的形式。环形隔离槽是在形成了柔性衬底10、缓冲层、栅极绝缘层和层间绝缘层之后，对上述膜层进行刻蚀，从而形成环形隔离槽的结构。环形隔离槽具有较大的深度，那么在形成电致发光层13时，环形隔离槽可以使电致发光层13断开，从而使得显示区AA与环形隔离区VA1内的电致发光层13断开。
本公开实施例提供的显示面板的具体结构可以参见其制作方法部分的实施，重复之处不再赘述。
另一方面，本公开实施例还提供一种装置，包括上述任一显示面板。由于该显示装置解决问题的原理与上述显示面板相似，因此该显示装置的实施可以参见上述显示面板的实施，重复之处不再赘述。
尽管已描述了本公开的优选实施例，但本领域内的技术人员一旦得知了基本创造性概念，则可对这些实施例作出另外的变更和修改。所以，所附权利要求意欲解释为包括优选实施例以及落入本公开范围的所有变更和修改。
显然，本领域的技术人员可以对本公开实施例进行各种改动和变型而不脱离本公开实施例的精神和范围。这样，倘若本公开实施例的这些修改和变型属于本公开权利要求及其等同技术的范围之内，则本公开也意图包含这些改动和变型在内。

Claims (24)

  1. 一种显示面板的制作方法，其中，所述显示面板包括显示区，所述显示区包围的至少一个待挖孔区域，以及位于所述待挖孔区域与所述显示区之间的环形隔离区；所述制作方法包括：
    在衬底基板上的所述环形隔离区内形成包围所述待挖孔区域的环形挡墙；
    在所述衬底基板和所述环形挡墙之上形成电致发光层；
    在所述电致发光层背离所述衬底基板的一侧形成封装层；
    在所述待挖孔区域和所述环形隔离区内的所述封装层背离所述电致发光层的一侧形成填充层；
    其中，所述封装层包括叠层设置的第一无机封装层、第二无机封装层和有机封装层；所述有机封装层包括第一有机封装层部和第二有机封装层部，所述第一有机封装层部覆盖所述待挖孔区域，位于所述待挖孔区域对应的所述第一无机封装层和所述第二无机封装层之间；所述第二有机封装层部覆盖所述显示区，位于所述显示区对应的所述第一无机封装层和所述第二无机封装层之间。
  2. 如权利要求1所述的制作方法，其中，所述第一有机封装层部的厚度小于所述环形挡墙的高度。
  3. 如权利要求2所述的制作方法，其中，所述有机封装层采用喷墨打印法进行制作。
  4. 如权利要求1-3所述的制作方法，其中，在形成所述环形挡墙之前，还包括：
    在所述衬底基板上形成柔性衬底；
    所述在衬底基板上形成所述环形挡墙，包括：
    在所述柔性衬底背离所述衬底基板的一侧形成驱动线路层的同时形成所述环形挡墙。
  5. 如权利要求4所述的制作方法，其中，所述在所述柔性衬底背离所述 衬底基板的一侧形成驱动线路层的同时形成所述环形挡墙，包括：
    在所述柔性衬底背离所述衬底基板一侧的所述环形隔离区内形成包围所述待挖孔区域的第一环形挡墙、包围所述第一环形挡墙的第二环形挡墙、位于所述第一环形挡墙和所述第二环形挡墙之间以及包围所述第二环形挡墙的多个环形隔离部。
  6. 如权利要求5所述的制作方法，其中，所述在所述柔性衬底背离所述衬底基板的一侧形成驱动线路层，包括：
    在所述衬底基板上形成缓冲层；
    在所述缓冲层背离所述衬底基板的一侧形成有源层的图形；
    在所述有源层背离所述缓冲层的一侧形成栅极绝缘层；
    在所述栅极绝缘层背离所述有源层的一侧形成栅极金属层的图形；
    在所述栅极金属层背离所述栅极绝缘层的一侧形成层间绝缘层；
    在所述层间绝缘层背离所述栅极金属层的一侧形成源漏金属层的图形；
    在所述源漏金属层背离所述层间绝缘层的一侧形成平坦化层。
  7. 如权利要求6所述的制作方法，其中，所述环形隔离部为环形隔离柱，所述方法还包括：
    在形成所述源漏金属层的图形的同时形成所述环形隔离柱。
  8. 如权利要求6所述的制作方法，其中，所述环形隔离部为环形隔离槽，所述方法还包括：
    对形成在所述环形隔离区内的所述柔性衬底、所述缓冲层、所述栅极绝缘层及所述层间绝缘层进行刻蚀，形成所述环形隔离槽。
  9. 如权利要求6-8任一项所述的制作方法，其中，所述在所述衬底基板和所述环形挡墙之上形成电致发光层，包括：
    在所述平坦化层背离所述源漏金属层的一侧形成第一电极层的图形；
    在所述平坦化层背离所述源漏金属层的一侧形成像素界定层的图形；
    在所述像素界定层背离所述平坦化层的一侧形成支撑部的图形；
    在所述第一电极层背离所述平坦化层的一侧形成发光层；
    在所述发光层背离所述第一电极层的一侧形成第二电极层；
    其中，所述像素界定层的图形在所述衬底基板的正投影与所述第一电极层的图形在所述衬底基板的正投影部分交叠；
    所述第一环形挡墙和所述第二环形挡墙与所述平坦化层、所述像素界定层以及所述支撑部中的至少一个膜层同层。
  10. 如权利要求1-9所述的制作方法，其中，所述填充层在所述衬底基板的正投影与所述第二有机封装层部在所述衬底基板的正投影存在交叠区域。
  11. 如权利要求10所述的制作方法，其中，所述第二有机封装层部覆盖所述第二环形隔离柱以及所述第二环形挡墙背离所述第一环形挡墙一侧的侧壁。
  12. 如权利要求1-11任一项所述的制作方法，其中，所述填充层背离所述衬底基板一侧的表面高于所述显示区内的所述封装层背离所述衬底基板一侧的表面。
  13. 如权利要求12所述的制作方法，还包括：
    在所述填充层和所述封装层背离所述衬底基板的一侧形成阻挡层；
    在所述阻挡层背离所述衬底基板的一侧形成触控功能层；
    在所述触控功能层背离所述阻挡层的一侧形成保护层；
    其中，所述触控功能层包括触控电极的图形，所述触控电极的图形在所述衬底基板的正投影与所述填充层在所述衬底基板的正投影互不交叠。
  14. 如权利要求13所述的制作方法，其中，在所述阻挡层背离所述衬底基板的一侧形成触控功能层，包括：
    在所述阻挡层背离所述衬底基板的一侧形成第一金属层；
    在所述第一金属层背离所述阻挡层的一侧形成触控绝缘层；
    在所述触控绝缘层背离所述第一金属层的一侧形成第二金属层；
    其中，所述第一金属层包括第一触控电极连接部的图形，所述第二金属层包括第一触控电极、第二触控电极以及第二触控电极连接部的图形；
    所述第一触控电极连接部在所述衬底基板的正投影与所述填充层在所述 衬底基板的正投影互不交叠。
  15. 如权利要求4-14任一项所述的制作方法，还包括：
    将所述柔性衬底在所述衬底基板上剥离；
    对剥离后的显示面板中的所述待挖孔区域进行挖孔。
  16. 一种显示面板，包括：
    柔性衬底，所述柔性衬底包括显示区，所述显示区包围至少一个挖孔区域，以及位于所述显示区和所述挖孔区域之间的环形隔离区；
    驱动线路层，位于所述柔性衬底之上；
    电致发光层，位于所述驱动线路层背离所述柔性衬底的一侧；
    封装层，位于所述电致发光层背离所述柔性衬底的一侧；
    填充层，位于所述封装层背离所述电致发光层的一侧，所述填充层位于所述环形隔离内；
    阻挡层，位于所述封装层和所述填充层背离所述电致发光层的一侧；和
    触控功能层，位于所述阻挡层背离所述封装层的一侧；其中，
    所述填充层背离所述柔性衬底一侧的表面高于所述显示区内的所述封装层背离所述柔性衬底一侧的表面；
    所述触控功能层包括触控电极的图形，所述触控电极的图形在所述柔性衬底的正投影与所述填充层在所述柔性衬底的正投影互不交叠。
  17. 如权利要求16所述的显示面板，还包括：
    保护层，位于所述触控功能层和所述阻挡层背离所述封装层的一侧；其中，
    所述驱动线路层包括：
    缓冲层，位于所述柔性衬底之上；
    有源层，位于所述缓冲层背离所述柔性衬底的一侧；
    栅极绝缘层，位于所述有源层和所述缓冲层背离所述柔性衬底的一侧；
    栅极金属层，位于所述栅极绝缘层背离所述有源层的一侧；
    层间绝缘层，位于所述栅极金属层背离所述栅极绝缘层的一侧；
    源漏金属层，位于所述层间绝缘层背离所述栅极金属层的一侧；
    平坦化层，位于所述源漏金属层背离所述层间绝缘层的一侧；
    所述电致发光层包括：
    第一电极层，位于所述平坦化层背离所述源漏金属层的一侧，所述第一电极层包括多个第一电极；
    像素界定层，位于所述平坦化层背离所述源漏金属层的一侧，所述像素界定层位于各所述第一电极之间的间隔位置；
    支撑部，位于所述像素界定层背离所述平坦化层的一侧；
    发光层，位于所述第一电极背离所述平坦化层的一侧；
    第二电极层，位于所述发光层和所述像素界定层背离所述第一电极层的一侧；
    所述封装层包括：
    第一无机封装层，位于所述第二电极层背离所述发光层的一侧；
    有机封装层，位于所述第一无机封装层背离所述第二电极层的一侧；
    第二无机封装层，位于所述有机封装层背离所述第一封装层的一侧；其中，
    所述第一无机封装层和所述第二无机封装层在所述柔性衬底的正投影覆盖所述显示区和所述环形隔离区；所述有机封装层在所述柔性衬底的正投影位于所述显示区内；
    所述触控功能层包括：
    第一金属层，位于所述阻挡层背离所述封装层的一侧；
    触控绝缘层，位于所述第一金属层背离所述阻挡层的一侧；
    第二金属层，位于所述触控绝缘层背离所述第一金属层的一侧；其中，
    所述第一金属层包括第一触控电极连接部的图形，所述第二金属层包括第一触控电极、第二触控电极以及第二触控电极连接部的图形，所述第一触控电极连接部通过所述触控绝缘层的过孔与所述第一触控电极电连接；
    所述第一触控电极连接部的图形在所述柔性衬底的正投影与所述填充层 在所述柔性衬底的正投影互不交叠。
  18. 如权利要求17所述的显示面板，其中，所述环形隔离区包括：
    环形挡墙，包围所述挖孔区域设置；
    至少一个第一环形隔离部，被所述环形挡墙包围设置；
    至少一个第二环形隔离部，包围所述环形挡墙设置；其中，
    所述环形挡墙与所述平坦层、所述像素界定层和所述支撑柱中的至少一层同层设置。
  19. 如权利要求18所述的显示面板，其中，所述有机封装层覆盖所述第二环形隔离部以及所述环形挡墙面向所述显示区一侧的侧壁。
  20. 如权利要求19所述的显示面板，其中，所述填充层在所述柔性衬底的正投影与所述有机封装层在所述柔性衬底的正投影存在交叠区域。
  21. 如权利要求20所述的显示面板，其中，所述填充层覆盖所述环形挡墙，所述填充层靠近所述显示区一侧的边缘不超过距离所述显示区最近的所述第二环形隔离部的边缘。
  22. 如权利要求18-21任一项所述的显示面板，其中，所述第一环形隔离部和所述第二环形隔离部均为环形隔离柱；
    所述环形隔离柱与所述源漏金属层同层设置。
  23. 如权利要求18-21任一项所述的显示面板，其中，所述第一环形隔离部和所述第二环形隔离部均为环形隔离槽；
    所述环形隔离槽贯穿所述缓冲层、所述栅极绝缘层和所述层间绝缘层，在所述柔性衬底上形成环形凹槽。
  24. 一种显示装置，包括如权利要求16-23任一项所述的显示面板。
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