CN115669271A - 显示面板及其制造方法、显示装置 - Google Patents
显示面板及其制造方法、显示装置 Download PDFInfo
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- CN115669271A CN115669271A CN202180000990.7A CN202180000990A CN115669271A CN 115669271 A CN115669271 A CN 115669271A CN 202180000990 A CN202180000990 A CN 202180000990A CN 115669271 A CN115669271 A CN 115669271A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 239000010410 layer Substances 0.000 claims abstract description 430
- 239000000758 substrate Substances 0.000 claims abstract description 185
- 238000002955 isolation Methods 0.000 claims abstract description 134
- 230000002093 peripheral effect Effects 0.000 claims abstract description 49
- 238000005538 encapsulation Methods 0.000 claims abstract description 20
- 239000012044 organic layer Substances 0.000 claims abstract description 15
- 125000006850 spacer group Chemical group 0.000 claims description 94
- 239000000084 colloidal system Substances 0.000 claims description 40
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- 238000009413 insulation Methods 0.000 claims description 15
- 239000002346 layers by function Substances 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 15
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- 239000010936 titanium Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 238000002347 injection Methods 0.000 claims description 4
- 239000007924 injection Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 238000005520 cutting process Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000000694 effects Effects 0.000 description 24
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 18
- 229910052760 oxygen Inorganic materials 0.000 description 18
- 239000001301 oxygen Substances 0.000 description 18
- XNMARPWJSQWVGC-UHFFFAOYSA-N 2-[3-[11-[[5-(dimethylamino)naphthalen-1-yl]sulfonylamino]undecanoylamino]propoxy]-4-[(5,5,8,8-tetramethyl-6,7-dihydronaphthalene-2-carbonyl)amino]benzoic acid Chemical compound CC1(C)CCC(C)(C)C=2C1=CC(C(=O)NC=1C=C(C(=CC=1)C(O)=O)OCCCNC(=O)CCCCCCCCCCNS(=O)(=O)C1=C3C=CC=C(C3=CC=C1)N(C)C)=CC=2 XNMARPWJSQWVGC-UHFFFAOYSA-N 0.000 description 10
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- 102100030704 Interleukin-21 Human genes 0.000 description 4
- 102100021596 Interleukin-31 Human genes 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 108010074108 interleukin-21 Proteins 0.000 description 4
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- 238000000926 separation method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000012780 transparent material Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- HRHKULZDDYWVBE-UHFFFAOYSA-N indium;oxozinc;tin Chemical compound [In].[Sn].[Zn]=O HRHKULZDDYWVBE-UHFFFAOYSA-N 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920000123 polythiophene Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
- H10K59/80523—Multilayers, e.g. opaque multilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/871—Self-supporting sealing arrangements
- H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
- H10K59/8731—Encapsulations multilayered coatings having a repetitive structure, e.g. having multiple organic-inorganic bilayers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
显示面板，包括：衬底基板(11)，包括显示区(111)和围绕显示区(111)的周边区(112)；隔离件(12)，位于周边区(112)，包括至少部分围绕显示区(111)的至少一个隔离部(121)，每个隔离部(121)包括依次叠置在衬底基板(11)上的第一隔离层(1211)和第二隔离层(1212)，第一隔离层(1211)在衬底基板(11)上的第一正投影(1211’)位于第二隔离层(1212)在衬底基板(11)上的第二正投影(12121)之内；阴极(13)，包括：第一阴极部(131)，位于隔离件(12)靠近显示区(111)的一侧，和第二阴极部(132)，位于隔离件(12)远离显示区(111)的一侧且与第一阴极部(131)间隔开；和封装层(16)，位于阴极(13)远离衬底基板(11)的一侧，包括第一无机层(161)和第二无机层(162)、以及位于第一无机层(161)和第二无机层(162)之间的有机层(163)，第一无机层(161)、有机层(163)和第二无机层(162)在衬底基板(11)上的正投影的边缘重叠。还提供一种显示面板的制造方法和显示装置。
Description
PCT国内申请，说明书已公开。
Claims (28)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/091175 WO2022226939A1 (zh) | 2021-04-29 | 2021-04-29 | 显示面板及其制造方法、显示装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115669271A true CN115669271A (zh) | 2023-01-31 |
Family
ID=83846604
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180000990.7A Pending CN115669271A (zh) | 2021-04-29 | 2021-04-29 | 显示面板及其制造方法、显示装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240049569A1 (zh) |
| CN (1) | CN115669271A (zh) |
| GB (1) | GB2614833A (zh) |
| WO (1) | WO2022226939A1 (zh) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20160006861A (ko) * | 2014-07-09 | 2016-01-20 | 삼성디스플레이 주식회사 | 디스플레이 장치 |
| KR101763616B1 (ko) * | 2015-07-29 | 2017-08-02 | 삼성디스플레이 주식회사 | 유기 발광 표시 장치 |
| CN209071332U (zh) * | 2018-10-31 | 2019-07-05 | 云谷（固安）科技有限公司 | 显示面板、显示屏和显示终端 |
| CN109802052B (zh) * | 2019-01-25 | 2021-05-07 | 上海天马微电子有限公司 | 一种有机发光显示面板及其制作方法 |
| CN109935601B (zh) * | 2019-04-04 | 2021-01-26 | 京东方科技集团股份有限公司 | 一种显示面板及其制备方法 |
| AU2019279976B1 (en) * | 2019-08-01 | 2020-11-19 | Boe Technology Group Co., Ltd. | Display substrate and display device |
-
2021
- 2021-04-29 WO PCT/CN2021/091175 patent/WO2022226939A1/zh active Application Filing
- 2021-04-29 CN CN202180000990.7A patent/CN115669271A/zh active Pending
- 2021-04-29 GB GB2305014.9A patent/GB2614833A/en active Pending
- 2021-04-29 US US17/640,530 patent/US20240049569A1/en active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| GB2614833A (en) | 2023-07-19 |
| WO2022226939A1 (zh) | 2022-11-03 |
| US20240049569A1 (en) | 2024-02-08 |
| GB202305014D0 (en) | 2023-05-17 |
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