WO2022185571A1 - 接合用導電性組成物及びこれを用いた接合構造及びその製造方法 - Google Patents
接合用導電性組成物及びこれを用いた接合構造及びその製造方法 Download PDFInfo
- Publication number
- WO2022185571A1 WO2022185571A1 PCT/JP2021/032627 JP2021032627W WO2022185571A1 WO 2022185571 A1 WO2022185571 A1 WO 2022185571A1 JP 2021032627 W JP2021032627 W JP 2021032627W WO 2022185571 A1 WO2022185571 A1 WO 2022185571A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- conductive composition
- copper
- bonding
- mass
- carboxylic acid
- Prior art date
Links
- 239000000203 mixture Substances 0.000 title claims abstract description 111
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000002245 particle Substances 0.000 claims abstract description 189
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 161
- 229910052802 copper Inorganic materials 0.000 claims abstract description 122
- 239000010949 copper Substances 0.000 claims abstract description 122
- 230000001186 cumulative effect Effects 0.000 claims abstract description 21
- 238000009826 distribution Methods 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005245 sintering Methods 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 23
- 150000001735 carboxylic acids Chemical class 0.000 claims description 21
- YPIFGDQKSSMYHQ-UHFFFAOYSA-N 7,7-dimethyloctanoic acid Chemical compound CC(C)(C)CCCCCC(O)=O YPIFGDQKSSMYHQ-UHFFFAOYSA-N 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 8
- 239000007788 liquid Substances 0.000 claims description 8
- 238000005304 joining Methods 0.000 claims description 6
- 125000001931 aliphatic group Chemical group 0.000 claims description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 abstract description 38
- 238000002156 mixing Methods 0.000 abstract description 15
- 238000000034 method Methods 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 17
- 238000000576 coating method Methods 0.000 description 17
- 230000000052 comparative effect Effects 0.000 description 16
- 239000002612 dispersion medium Substances 0.000 description 15
- 235000011837 pasties Nutrition 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 238000004898 kneading Methods 0.000 description 10
- 238000003756 stirring Methods 0.000 description 9
- 239000011164 primary particle Substances 0.000 description 8
- 230000009467 reduction Effects 0.000 description 8
- 238000011049 filling Methods 0.000 description 7
- 229940068886 polyethylene glycol 300 Drugs 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 5
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 230000001603 reducing effect Effects 0.000 description 4
- 229920006395 saturated elastomer Polymers 0.000 description 4
- 229940116411 terpineol Drugs 0.000 description 4
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- -1 aromatic carboxylic acids Chemical class 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000005388 borosilicate glass Substances 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- MHPUGCYGQWGLJL-UHFFFAOYSA-N dimethyl pentanoic acid Natural products CC(C)CCCC(O)=O MHPUGCYGQWGLJL-UHFFFAOYSA-N 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 150000002763 monocarboxylic acids Chemical class 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000012798 spherical particle Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PUPZLCDOIYMWBV-UHFFFAOYSA-N (+/-)-1,3-Butanediol Chemical compound CC(O)CCO PUPZLCDOIYMWBV-UHFFFAOYSA-N 0.000 description 2
- XDOFQFKRPWOURC-UHFFFAOYSA-N 16-methylheptadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCCCC(O)=O XDOFQFKRPWOURC-UHFFFAOYSA-N 0.000 description 2
- SVTBMSDMJJWYQN-UHFFFAOYSA-N 2-methylpentane-2,4-diol Chemical compound CC(O)CC(C)(C)O SVTBMSDMJJWYQN-UHFFFAOYSA-N 0.000 description 2
- OAOABCKPVCUNKO-UHFFFAOYSA-N 8-methyl Nonanoic acid Chemical compound CC(C)CCCCCCC(O)=O OAOABCKPVCUNKO-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 239000002202 Polyethylene glycol Substances 0.000 description 2
- 150000001298 alcohols Chemical class 0.000 description 2
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 229910001431 copper ion Inorganic materials 0.000 description 2
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 150000002170 ethers Chemical class 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- KQNPFQTWMSNSAP-UHFFFAOYSA-N isobutyric acid Chemical compound CC(C)C(O)=O KQNPFQTWMSNSAP-UHFFFAOYSA-N 0.000 description 2
- UODXCYZDMHPIJE-UHFFFAOYSA-N menthanol Chemical compound CC1CCC(C(C)(C)O)CC1 UODXCYZDMHPIJE-UHFFFAOYSA-N 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920001223 polyethylene glycol Polymers 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002002 slurry Substances 0.000 description 2
- 238000004381 surface treatment Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000001124 (E)-prop-1-ene-1,2,3-tricarboxylic acid Substances 0.000 description 1
- GYSCBCSGKXNZRH-UHFFFAOYSA-N 1-benzothiophene-2-carboxamide Chemical compound C1=CC=C2SC(C(=O)N)=CC2=C1 GYSCBCSGKXNZRH-UHFFFAOYSA-N 0.000 description 1
- ZONJATNKKGGVSU-UHFFFAOYSA-N 14-methylpentadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCC(O)=O ZONJATNKKGGVSU-UHFFFAOYSA-N 0.000 description 1
- VUAXHMVRKOTJKP-UHFFFAOYSA-N 2,2-dimethylbutyric acid Chemical compound CCC(C)(C)C(O)=O VUAXHMVRKOTJKP-UHFFFAOYSA-N 0.000 description 1
- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 1
- LCZVSXRMYJUNFX-UHFFFAOYSA-N 2-[2-(2-hydroxypropoxy)propoxy]propan-1-ol Chemical compound CC(O)COC(C)COC(C)CO LCZVSXRMYJUNFX-UHFFFAOYSA-N 0.000 description 1
- WLAMNBDJUVNPJU-UHFFFAOYSA-N 2-methylbutyric acid Chemical compound CCC(C)C(O)=O WLAMNBDJUVNPJU-UHFFFAOYSA-N 0.000 description 1
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 1
- OEOIWYCWCDBOPA-UHFFFAOYSA-N 6-methyl-heptanoic acid Chemical compound CC(C)CCCCC(O)=O OEOIWYCWCDBOPA-UHFFFAOYSA-N 0.000 description 1
- XZOYHFBNQHPJRQ-UHFFFAOYSA-N 7-methyloctanoic acid Chemical compound CC(C)CCCCCC(O)=O XZOYHFBNQHPJRQ-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- JIPTZBYHWFNYFB-UHFFFAOYSA-N Anteisomyristic acid Chemical compound CCC(C)CCCCCCCCCC(O)=O JIPTZBYHWFNYFB-UHFFFAOYSA-N 0.000 description 1
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical compound [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 1
- 239000005751 Copper oxide Substances 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 241001466538 Gymnogyps Species 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229940091181 aconitic acid Drugs 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000000889 atomisation Methods 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 description 1
- 239000012461 cellulose resin Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- GTZCVFVGUGFEME-IWQZZHSRSA-N cis-aconitic acid Chemical compound OC(=O)C\C(C(O)=O)=C\C(O)=O GTZCVFVGUGFEME-IWQZZHSRSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000011231 conductive filler Substances 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 229910001956 copper hydroxide Inorganic materials 0.000 description 1
- 229910000431 copper oxide Inorganic materials 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(I) oxide Inorganic materials [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 1
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 1
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 1
- 229940112669 cuprous oxide Drugs 0.000 description 1
- 238000010908 decantation Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004993 emission spectroscopy Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229940051250 hexylene glycol Drugs 0.000 description 1
- 229930195733 hydrocarbon Natural products 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- FGKJLKRYENPLQH-UHFFFAOYSA-N isocaproic acid Chemical compound CC(C)CCC(O)=O FGKJLKRYENPLQH-UHFFFAOYSA-N 0.000 description 1
- SIOLDWZBFABPJU-UHFFFAOYSA-N isotridecanoic acid Chemical compound CC(C)CCCCCCCCCC(O)=O SIOLDWZBFABPJU-UHFFFAOYSA-N 0.000 description 1
- GWYFCOCPABKNJV-UHFFFAOYSA-N isovaleric acid Chemical compound CC(C)CC(O)=O GWYFCOCPABKNJV-UHFFFAOYSA-N 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002609 medium Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 239000002105 nanoparticle Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 235000005985 organic acids Nutrition 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- IUGYQRQAERSCNH-UHFFFAOYSA-N pivalic acid Chemical compound CC(C)(C)C(O)=O IUGYQRQAERSCNH-UHFFFAOYSA-N 0.000 description 1
- 229920005668 polycarbonate resin Polymers 0.000 description 1
- 239000004431 polycarbonate resin Substances 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920001451 polypropylene glycol Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000006228 supernatant Substances 0.000 description 1
- UAXOELSVPTZZQG-UHFFFAOYSA-N tiglic acid Natural products CC(C)=C(C)C(O)=O UAXOELSVPTZZQG-UHFFFAOYSA-N 0.000 description 1
- GTZCVFVGUGFEME-UHFFFAOYSA-N trans-aconitic acid Natural products OC(=O)CC(C(O)=O)=CC(O)=O GTZCVFVGUGFEME-UHFFFAOYSA-N 0.000 description 1
- 150000003628 tricarboxylic acids Chemical class 0.000 description 1
- ZFZQOKHLXAVJIF-UHFFFAOYSA-N zinc;boric acid;dihydroxy(dioxido)silane Chemical compound [Zn+2].OB(O)O.O[Si](O)([O-])[O-] ZFZQOKHLXAVJIF-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/052—Metallic powder characterised by the size or surface area of the particles characterised by a mixture of particles of different sizes or by the particle size distribution
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/1003—Use of special medium during sintering, e.g. sintering aid
- B22F3/1007—Atmosphere
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/062—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts
- B22F7/064—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools involving the connection or repairing of preformed parts using an intermediate powder layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/06—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools
- B22F7/08—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite workpieces or articles from parts, e.g. to form tipped tools with one or more parts not made from powder
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/02—Making metallic powder or suspensions thereof using physical processes
- B22F9/04—Making metallic powder or suspensions thereof using physical processes starting from solid material, e.g. by crushing, grinding or milling
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/04—Interconnection of layers
- B32B7/12—Interconnection of layers using interposed adhesives or interposed materials with bonding properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/005—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
- B32B9/007—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B9/00—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
- B32B9/04—Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising such particular substance as the main or only constituent of a layer, which is next to another layer of the same or of a different material
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2201/00—Treatment under specific atmosphere
- B22F2201/02—Nitrogen
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2301/00—Metallic composition of the powder or its coating
- B22F2301/10—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/05—Submicron size particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2304/00—Physical aspects of the powder
- B22F2304/10—Micron size particles, i.e. above 1 micrometer up to 500 micrometer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2998/00—Supplementary information concerning processes or compositions relating to powder metallurgy
- B22F2998/10—Processes characterised by the sequence of their steps
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F2999/00—Aspects linked to processes or compositions used in powder metallurgy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2250/00—Layers arrangement
- B32B2250/02—2 layers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/06—Coating on the layer surface on metal layer
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2255/00—Coating on the layer surface
- B32B2255/26—Polymeric coating
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/10—Inorganic particles
- B32B2264/105—Metal
- B32B2264/1055—Copper or nickel
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2264/00—Composition or properties of particles which form a particulate layer or are present as additives
- B32B2264/30—Particles characterised by physical dimension
- B32B2264/302—Average diameter in the range from 100 nm to 1000 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/20—Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
- B32B2307/202—Conductive
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2400/00—Presence of inorganic and organic materials
- C09J2400/10—Presence of inorganic materials
- C09J2400/16—Metal
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/29294—Material of the matrix with a principal constituent of the material being a liquid not provided for in groups H01L2224/292 - H01L2224/29291
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/83053—Bonding environment
- H01L2224/83054—Composition of the atmosphere
- H01L2224/83065—Composition of the atmosphere being reducing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
- H01L2224/83192—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8338—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/83399—Material
- H01L2224/834—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/83438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/83447—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49503—Lead-frames or other flat leads characterised by the die pad
- H01L23/49513—Lead-frames or other flat leads characterised by the die pad having bonding material between chip and die pad
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
Definitions
- the present invention relates to a conductive composition for bonding, a bonding structure using the same, and a manufacturing method thereof.
- Patent Document 1 for the purpose of improving oxidation resistance, sinterability, conductivity, etc., a copper filler having an average aggregate particle size of 0.5 to 20 ⁇ m and a copper filler having an average aggregate particle size of 50 to 200 nm
- a conductive filler comprising nanoparticles and an aliphatic carboxylic acid is disclosed.
- Patent Document 2 contains copper-containing particles and fatty acids for the purpose of improving the productivity of conductors, and the content of fatty acids is 0.1 parts by mass to 5.8 parts by mass with respect to 100 parts by mass of copper-containing particles.
- a conductor-forming composition is disclosed which is
- Patent Documents 1 and 2 Both of the compositions disclosed in Patent Documents 1 and 2 are sintered and used as a bonding material for conductors, and the bonding layer obtained has sufficient both conductivity and bonding strength. However, there was room for further improvement. In particular, the techniques described in Patent Documents 1 and 2 do not provide sufficient bonding strength when bonding without pressure.
- the present invention relates to a conductive composition for bonding that can achieve both high conductivity and high bonding strength.
- the present invention comprises a mixture of copper powder and carboxylic acid, the carboxylic acid has a branched carbon chain in its structure,
- the copper powder is composed of first copper particles having a volume cumulative particle size D of 0.11 ⁇ m or more and less than 1 ⁇ m at a cumulative volume of 50 % by volume in a particle size distribution of less than 1 ⁇ m in a particle size distribution measured by a scanning electron microscope, Cupric particles having a volume cumulative particle diameter D50 of 1 ⁇ m or more and 10 ⁇ m or less in a cumulative volume of 50% by volume in a region of 1 ⁇ m or more in a particle size distribution measured by a microscope, It relates to the conductive composition for bonding, wherein the content of the carboxylic acid is 6 parts by mass or more and 24 parts by mass or less with respect to 100 parts by mass of the copper powder.
- the present invention relates to a composition for bonding electronic component materials such as conductors, that is, a conductive composition for bonding.
- This conductive composition is used for bonding electronic component materials together under no pressure or under pressure. It is suitable for joining materials under pressure.
- the conductive composition for bonding is simply referred to as the conductive composition.
- the conductive composition is a mixture of copper powder and carboxylic acid.
- the copper powder contains at least two types of copper particles, first copper particles and second copper particles.
- Both the first copper particles and the second copper particles are composed of the copper element and do not contain other elements other than the copper element except for inevitable impurities. That is, the first copper particles and the second copper particles each independently inevitably contain trace amounts of other elements other than the copper element, or the surface of each copper particle is inevitably slightly oxidized. , it is permissible to unavoidably contain a small amount of oxygen element.
- the content of elements other than the copper element in each copper particle is independently 5% by mass or less. The content of these elements can be measured by, for example, ICP emission spectrometry or inert gas fusion/non-dispersive infrared absorption method.
- the copper powder contained in the conductive composition has at least one peak in a particle size range of 0.11 ⁇ m or more and less than 1 ⁇ m in a volume-based particle size distribution measured by a scanning electron microscope, and has a particle size of 1 ⁇ m. It is preferable to have at least one peak in the region of 10 ⁇ m or more.
- the particle diameters of the first copper particles and the second copper particles constituting the copper powder are less than 1 ⁇ m in the particle size distribution of the copper powder in the conductive composition measured by a scanning electron microscope. It is calculated from the volume cumulative particle size D50 of the cumulative volume of 50% by volume in each region, divided into regions and regions having a particle diameter of 1 ⁇ m or more. Specifically, after adding 10 times the equivalent amount (mass) of 2-propanol to the conductive composition to be measured and sufficiently stirring, only the supernatant liquid is removed while leaving the solid content (cake). Repeat the washing procedure to remove. Next, the obtained cake is allowed to stand still at room temperature to dry sufficiently, and then the dried product is examined with a scanning electron microscope.
- the particle diameter Heywood diameter
- the particle diameter was measured by randomly selecting those in which the outline of the particle was observed. , to calculate the particle size distribution.
- the obtained particle size distribution is divided into a region with a particle size of less than 1 ⁇ m and a region with a particle size of 1 ⁇ m or more. is measured and taken as the particle diameter of the first copper particles.
- the volume cumulative particle size D50 at a cumulative volume of 50 % by volume is measured from the particle size distribution in the region where the particle size is 1 ⁇ m or more, and this is taken as the particle size of the cupric particles.
- the particle size of the particles to be measured is calculated by measuring at least 50 points in each of the areas of less than 1 ⁇ m and 1 ⁇ m or more.
- the cumulative volume in the region of less than 1 ⁇ m in the particle size distribution measured by a scanning electron microscope is 50% by volume.
- the volume cumulative particle diameter D50 of the cuprous particles is preferably 0.11 ⁇ m or more.
- the volume cumulative particle size D50 of the cuprous particles is preferably less than 1 ⁇ m, more preferably 0.8 ⁇ m or less, and even more preferably 0.6 ⁇ m or less. , more preferably 0.4 ⁇ m or less.
- the cumulative volume in the region of 1 ⁇ m or more in the particle size distribution measured by a scanning electron microscope is 50% by volume.
- the volume cumulative particle size D 50 of the particles is preferably 1 ⁇ m or more.
- the volume cumulative particle size D50 of the second copper particles is preferably 10 ⁇ m or less, more preferably 8 ⁇ m or less, and even more preferably 8 ⁇ m or less. is 6 ⁇ m or less.
- first copper particles and the second copper particles there are no particular restrictions on the shape of the first copper particles and the second copper particles, and they may independently have various shapes such as spherical, flake-like (flaky), polyhedral, dendrite-like (dendritic), and columnar. can be adopted. Both the first copper particles and the second copper particles are preferably spherical from the viewpoint of enhancing the filling property of the particles and sufficiently exhibiting the bonding strength even in bonding under no pressure.
- Whether or not the copper particles are spherical can be determined by calculating the circularity coefficient 4 ⁇ S/L 2 from the area S and perimeter L of each particle randomly selected by the above-described particle size measurement method, and further calculating the arithmetic Calculate the average value.
- a copper particle is defined as spherical when the arithmetic mean value of the circularity coefficient is 0.85 or more.
- the ratio of the first copper particles to the total mass of the first copper particles and the second copper particles in the conductive composition is preferably 20% by mass or more and 95% by mass or less, more preferably 25% by mass or more and 90% by mass or less, More preferably, it is 30% by mass or more and 80% by mass or less.
- the ratio of the second copper particles to the total mass of the first copper particles and the second copper particles is preferably 5% by mass or more and 80% by mass or less, more preferably 10% by mass or more and 75% by mass or less, still more preferably It is 20 mass % or more and 70 mass % or less. With such a blending ratio, it is possible to improve the filling property of the particles and sufficiently develop the bonding strength even in bonding under no pressure.
- the conductive composition contains carboxylic acid.
- Carboxylic acids are organic acids that are liquid or solid at 1 atm and 20°C.
- Carboxylic acids contained in the conductive composition include aliphatic or aromatic carboxylic acids having straight carbon chains or branched carbon chains (hereinafter also simply referred to as branched chains).
- the carboxylic acid contained in the conductive composition is preferably a branched aliphatic carboxylic acid.
- Carboxylic acids contained in the conductive composition include branched primary carboxylic acids, secondary carboxylic acids, and tertiary carboxylic acids, preferably secondary or tertiary carboxylic acids. acid, more preferably tertiary carboxylic acid.
- carboxylic acid By using such a carboxylic acid, the bulkiness of the molecular structure of the carboxylic acid makes it possible to appropriately maintain the dispersibility of the particles and improve the handleability of the conductive composition.
- the sinterability of the conductive composition can be sufficiently enhanced to easily obtain a bonding layer having both high levels of conductivity and bonding strength between other members.
- carboxylic acid may be monovalent or polyvalent.
- carboxylic acid may be a saturated carboxylic acid or an unsaturated carboxylic acid.
- the carboxylic acid contained in the conductive composition preferably has 4 to 18 carbon atoms, more preferably 5 to 15 carbon atoms, still more preferably 6 to 13 carbon atoms, from the viewpoint of improving handleability. It is below.
- carboxylic acids suitable for the present invention include, for example, isobutyric acid, pivalic acid, 2,2-methylbutyric acid, isopentanoic acid, isohexanoic acid, isoheptanoic acid, isooctanoic acid, isononanoic acid, isodecanoic acid, neodecanoic acid, Branched and aliphatic saturated monocarboxylic acids such as isotridecanic acid, isotetradecanoic acid, isopalmitic acid, isostearic acid; branched chain aliphatic unsaturated monocarboxylic acids such as methacrylic acid; unsaturated tricarboxylic acids such as aconitic acid. and the like. These can be used alone or in combination.
- a carboxylic acid that is liquid at 1 atm and 20° C. is preferably used.
- the carboxylic acid itself functions as a dispersion medium without using a separate dispersion medium, which will be described later. Therefore, a conductive composition in which each copper particle is uniformly dispersed can be obtained with high productivity. can be done.
- the copper particles can be easily dispersed and maintained in that state. It is possible to easily obtain a bonding layer in which high bonding strength between members is compatible.
- Examples of carboxylic acids that are liquid at 1 atm and 20° C. include branched and aliphatic saturated monocarboxylic acids having 4 to 18 carbon atoms.
- a tertiary saturated aliphatic monocarboxylic acid that is liquid at 1 atm and 20°C is more preferable from the viewpoint of having both conductivity and bonding strength at a high level.
- Such carboxylic acids include 2,2-dimethylbutyric acid and neodecanoic acid, with neodecanoic acid being particularly preferred.
- the content of the carboxylic acid in the conductive composition is preferably 6 parts by mass or more and 24 parts by mass or less, more preferably 6 parts by mass or more and 20 parts by mass or less with respect to 100 parts by mass of the copper powder.
- Examples of the form of the conductive composition described above include conductive slurry, conductive ink, and conductive paste.
- the carboxylic acid contains a solid carboxylic acid at 1 atm and 20°C, it preferably further contains a dispersion medium from the viewpoint of improving the uniform dispersibility of the copper particles and the carboxylic acid and improving the dispersibility of the copper particles.
- Dispersion media that can be used in the conductive composition include, for example, water, alcohols, ketones, esters, ethers, hydrocarbons, binder resins, and the like.
- binder resins include at least one of acrylic resins, epoxy resins, polyester resins, polycarbonate resins, cellulose resins, and the like.
- alcohols such as propylene glycol, ethylene glycol, hexylene glycol, diethylene glycol, 1,3-butanediol, 1,4-butanediol, dipropylene glycol, tripropylene glycol, terpineol and dihydroterpineol, and ethyl carbitol and ethers such as butyl carbitol.
- the content of the dispersion medium in the conductive composition is preferably 20 parts by mass or less, more preferably 15 parts by mass or less, with respect to 100 parts by mass of the copper powder. Preferably, it is 10 parts by mass or less.
- the conductive composition is used as a sintering aid for the purpose of obtaining a dense bonding layer by increasing the filling property of the conductive composition and preventing unintended oxidation of copper particles during sintering by a high reducing action. It is also preferred to further contain an agent.
- the sintering aid may be used alone or in combination.
- Sintering aids with a high reducing action include polyethers such as polyethylene glycol and polypropylene glycol. These polyethers are excluded from the dispersion media mentioned above.
- the number average molecular weight is preferably 120 or more and 400 or less, more preferably 180 or more and 400 or less.
- the content of the sintering aid in the conductive composition is preferably 20 parts by mass or less, more preferably 15 parts by mass with respect to 100 parts by mass of the copper powder. parts or less, more preferably 10 parts by mass or less.
- the total content of the sintering aids should satisfy the above range. By setting the content of the sintering aid within this range, it is possible to prevent the bonding strength of the bonding structure from being lowered when the conductive composition is sintered.
- each of the copper particles described above does not have to be subjected to any special surface treatment.
- each copper particle constituting the copper powder may be coated or surface-treated with an organic substance or an inorganic substance as long as the effects of the present invention are exhibited.
- first copper particles, the second copper particles and the carboxylic acid are included, the first copper particles and the second copper particles are produced separately, and then the first copper particles and the second copper particles are produced.
- a known mixing device such as a roll mill can be used for mixing the raw materials.
- Various methods such as a wet reduction method, an atomization method, and an electric field reduction method can be adopted as the method for producing each copper particle.
- a wet reduction method or an atomizing method spherical particles are likely to be obtained.
- the electrolytic reduction method dendrite-like or columnar particles are likely to be obtained. Flake-like particles are obtained, for example, by applying a mechanical external force to spherical particles to plastically deform them.
- wet reduction method for both the production of cuprous particles and cupric particles, it is preferable to adopt a wet reduction method from the viewpoint of achieving both ease of particle size control and ease of obtaining spherical particles.
- the wet reduction method for example, the methods described in JP-A-2003-34802, JP-A-2015-168878 or JP-A-2017-179555 can be employed.
- a liquid medium containing water and preferably a monohydric alcohol having 1 to 5 carbon atoms is added with copper chloride, copper acetate, copper hydroxide, copper sulfate, copper oxide, cuprous oxide, or the like.
- a reaction solution containing a monovalent or divalent copper source is prepared. This reaction solution and hydrazine are mixed so that the ratio is preferably 0.5 mol or more and 50 mol or less per 1 mol of copper, and the copper ions derived from the copper source are reduced to obtain the desired first Copper particles or cupric particles are obtained.
- the obtained copper particles may be washed by a washing method such as a decantation method or a rotary filter method, if necessary.
- Each copper particle obtained by this method is either a slurry containing an aggregate of particles or a dry powder comprising the aggregate.
- the obtained copper particles may be further subjected to the surface treatment or coating treatment described above.
- the wet reduction method in order to control the average primary particle size of copper particles, it can be easily adjusted by changing conditions such as the concentration of copper ions contained in the reaction solution and the temperature of the reaction solution. Thereby, the first copper particles and the second copper particles having different particle sizes can be obtained. After that, the first copper particles and the second copper particles may be mixed so that the target copper powder has the particle size distribution and mass ratio described above.
- the average of the first copper particles used in the production of the conductive composition The primary particle size is preferably 0.11 ⁇ m or more and less than 1 ⁇ m, more preferably 0.11 ⁇ m or more and 0.8 ⁇ m or less. From the same point of view, the average primary particle size of the cupric particles used in the production of the conductive composition is preferably 1 ⁇ m or more and 10 ⁇ m or less, more preferably 1 ⁇ m or more and 8 ⁇ m or less.
- the average primary particle size of the first copper particles and the second copper particles used in the production of the conductive composition is, for example, from a scanning electron microscope image of the copper particles at a magnification of 1000 times to 100,000 times, and the particles do not overlap each other. 50 or more particles are randomly selected and the particle size (Heywood diameter) is measured, and the volume average particle size converted to spheres is calculated from these measured values.
- the conductive composition obtained through the above steps is, for example, applied to the surface of an object to be applied by a predetermined means to form a coating film, and after that, the coating film is applied under no pressure.
- the conductive film may be formed by heating under pressure.
- the conductive composition of the present invention is suitably used as a conductive bonding material such as a die bonding material for bonding electronic component materials such as various conductors.
- a conductive bonding material such as a die bonding material for bonding electronic component materials such as various conductors.
- it can also be used as a material for filling vias in a printed wiring board, or as an adhesive for surface-mounting an electronic device on a printed wiring board.
- the conductive composition of the present invention can exhibit sufficient bonding strength in bonding under no pressure.
- Materials for electronic parts as objects to be joined include, for example, spacers and heat sinks made of various conductive metals such as gold, silver, or copper, metal wires, substrates having such metals on their surfaces, and conductive materials such as semiconductor chips. Body is preferred.
- the method includes disposing a conductive composition between two electrical conductors and sintering the bonding conductive composition.
- a conductive composition is applied to the surface of the first conductor to form a coating film.
- the coating film to be formed may be formed over the entire surface of the first conductor, or may be formed discontinuously on the surface of the first conductor. From the viewpoint of developing a higher bonding strength, it is preferable that the coating film is formed over the entire area in which the second conductors are to be arranged, which will be described later.
- the thickness of the coating film to be formed is preferably set to 1 ⁇ m or more and 500 ⁇ m or less, more preferably 5 ⁇ m or more and 300 ⁇ m or less, immediately after coating, from the viewpoint of forming a joint structure having high joint strength stably. .
- first conductor and the second conductor may be of the same type of material or may be of different types of material.
- the conductive member is heat-treated under no pressure or under pressure to heat the coating film and sinter the contained copper powder, thereby joining the first conductor and the second conductor. do. This makes it possible to obtain a conductive joint structure in which a joint site derived from the conductive composition is formed.
- the atmosphere during sintering is preferably a reducing gas atmosphere such as hydrogen or formic acid, or an inert gas atmosphere such as nitrogen or argon.
- the sintering temperature is preferably less than 300°C, more preferably 150°C or more and less than 300°C, still more preferably 200°C or more and less than 300°C, still more preferably 230°C or more and less than 300°C.
- the sintering time is preferably 20 minutes or more, more preferably 20 minutes or more and 60 minutes or less, still more preferably 30 minutes or more and 60 minutes or less, provided that the sintering temperature is within the above range.
- the pressure is preferably 0.001 MPa or more, more preferably 0.001 MPa or more and 20 MPa or less, and still more preferably 0.01 MPa or more and 15 MPa or less.
- the sintering conditions in which an inert gas atmosphere and the above-mentioned sintering temperature conditions are adopted are moderate conditions in which the sintering of particles does not proceed well in the conventional technology and it is difficult to develop bonding strength.
- bonding is performed under no pressure, it is difficult for the meltability of copper particles and the formation of necking between particles to be sufficient. Voids are likely to occur in
- the presence of a carboxylic acid having a branched chain ensures high dispersibility between copper particles, and each copper Since the surface activity of the particles is maintained at a high level, sintering of the copper particles proceeds favorably, and high bonding strength can be developed.
- the second copper particles with a large particle size play a role like an aggregate, and the first copper particles with a small particle size serve as a filler that fills the gaps between the copper particles. Since it plays such a role, the filling property can be improved.
- the resulting sintered body has a dense structure, voids are less likely to occur, and high bonding strength can be exhibited.
- the thickness of the coating film becomes uniform, and unintended inclination of the object to be joined and defective joining are less likely to occur.
- bonding without pressure has the advantage of being able to simultaneously bond a plurality of objects with different heights, and the advantage of reducing manufacturing costs because there is no need to provide a separate pressure device. be.
- the generation of voids caused by volatile components derived from the dispersion medium can be further reduced, so that sintering proceeds well and a higher bonding strength can be achieved.
- the joining portion formed through the above steps is formed by sintering the conductive composition.
- the joint site is a sintered body of copper particles that constitute the conductive composition, and has electrical conductivity.
- a bonding structure having such a bonding portion can be used for various electronic circuits, electronic circuits used in environments exposed to high temperatures, such as in-vehicle electronic circuits, It is suitably used for electronic circuits in which power devices are mounted.
- As the carboxylic acid neodecanoic acid (Versatic 10 manufactured by Hexion; a branched and tertiary saturated aliphatic monocarboxylic acid that is liquid at 1 atm and 20° C.
- Example 2 To the conductive composition prepared in Example 1, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this example.
- a sintering aid polyethylene glycol 300 (PEG300)
- Example 4 To the conductive composition prepared in Example 3, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this example.
- a sintering aid polyethylene glycol 300 (PEG300)
- Example 6 To the conductive composition prepared in Example 5, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this example.
- a sintering aid polyethylene glycol 300 (PEG300)
- Example 8 To the conductive composition prepared in Example 7, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this example.
- a sintering aid polyethylene glycol 300 (PEG300)
- Comparative Example 4 To the conductive composition prepared in Comparative Example 3, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this comparative example.
- a sintering aid polyethylene glycol 300 (PEG300)
- Example 5 As a carboxylic acid, 11.11 parts by mass of decanoic acid (primary saturated carboxylic acid with a linear carbon chain, 10 carbon atoms, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.) was added to 100 parts by mass of the copper powder, and used as a dispersion medium. A paste-like conductive composition was prepared in the same manner as in Example 5, except that 7.41 parts by mass of terpineol was added to 100 parts by mass of the copper powder.
- decanoic acid primary saturated carboxylic acid with a linear carbon chain, 10 carbon atoms, manufactured by FUJIFILM Wako Pure Chemical Industries, Ltd.
- Example 9 to 11 and Comparative Example 6 Preliminary kneading, pasting, and dispersive mixing were performed in the same manner as in Example 5 except that the amount of neodecanoic acid was added to 100 parts by mass of the copper powder in the amount shown in Table 1 below, and a paste was obtained. A bonding conductive composition was prepared.
- Example 12 instead of the cuprous particles used in Example 5, spherical cuprous particles (CH-0200, manufactured by Mitsui Kinzoku Mining Co., Ltd.) having an average primary particle size of 0.16 ⁇ m were used. Preliminary kneading, pasting, and dispersive mixing were performed in the same manner to prepare a pasty conductive composition for bonding.
- CH-0200 manufactured by Mitsui Kinzoku Mining Co., Ltd.
- Example 13 To the conductive composition prepared in Example 12, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this example.
- a sintering aid polyethylene glycol 300 (PEG300)
- Comparative Example 8 To the conductive composition prepared in Comparative Example 7, 1 part by mass of a sintering aid (polyethylene glycol 300 (PEG300)) was further added to 100 parts by mass of the copper powder, and a rotation / revolution vacuum manufactured by Thinky Co., Ltd. Using a mixer ARE-500, one cycle of a stirring mode (1000 rpm ⁇ 1 minute) and a defoaming mode (2000 rpm ⁇ 30 seconds) was performed to prepare a pasty conductive composition for bonding of this comparative example.
- a sintering aid polyethylene glycol 300 (PEG300)
- a coating film was formed by applying the conductive composition of Examples or Comparative Examples by screen printing onto a chip mounting portion of a copper lead frame (thickness: 2.0 mm). The coating film was formed in a 5 mm square. The thickness of the coating film was 100 ⁇ m. Next, a 2 mm square SiC chip (thickness 0.37 mm) was placed on the coating film, and the thickness of the coating film was adjusted to 50 ⁇ m with a digimatic indicator (manufactured by Mitutoyo Corporation). Then, sintering was performed in a nitrogen atmosphere at 260° C. for 30 minutes to produce a joint structure in which a sintered body of the conductive composition was formed between the copper plate and the SiC chip.
- breaking strength is a value defined by breaking load (N)/joint area (mm 2 ).
- breaking load N
- joint area mm 2
- bonding strength was not evaluated. The results are shown in Table 1 below.
- the electrically conductive composition for joining which can exhibit high electroconductivity and high joining strength is provided.
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Physics & Mathematics (AREA)
- Dispersion Chemistry (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
Abstract
Description
前記カルボン酸はその構造中に分枝炭素鎖を有し、
前記銅粉は、走査型電子顕微鏡によって測定した粒度分布のうち1μm未満の領域における累積体積50容量%の体積累積粒径D50が0.11μm以上1μm未満の第1銅粒子と、走査型電子顕微鏡によって測定した粒度分布のうち1μm以上の領域における累積体積50容量%の体積累積粒径D50が1μm以上10μm以下の第2銅粒子とを含み、
前記カルボン酸の含有量が、前記銅粉100質量部に対して6質量部以上24質量部以下である、接合用導電性組成物に関する。
具体的には、測定対象となる導電性組成物に対して、10倍等量(質量)の2-プロパノールを添加して充分に撹拌した後、固形分(ケーク)を残しながら上澄み液のみを除去する洗浄操作を繰り返す。次いで、得られたケークを常温で静置して十分に乾燥させた後、その乾燥物を走査型電子顕微鏡にて確認する。
同様に、第1銅粒子及び第2銅粒子の合計質量に対する第2銅粒子の割合は、好ましくは5質量%以上80質量%以下、より好ましくは10質量%以上75質量%以下、更に好ましくは20質量%以上70質量%以下である。
このような配合割合となっていることによって、粒子の充填性を高めて、無加圧下での接合においても接合強度を十分に発現させることができる。
これらのうち、導電性組成物に含まれるカルボン酸は、分枝鎖の脂肪族カルボン酸であることが好ましい。これによって、カルボン酸が有する分枝鎖に起因する立体障害によって、銅粒子どうしが適度な距離を取ることができるため、導電性組成物中の粒子の分散性が向上するとともに、該組成物の印刷性も向上する。
このようなカルボン酸を用いることによって、カルボン酸の分子構造の嵩高さによって粒子どうしの分散性を適度に維持することができ、導電性組成物の取り扱い性を良好にすることができる。これに加えて、導電性組成物の焼結性を十分に高めて、導電性と、他の部材どうしの接合強度とが高いレベルで両立した接合層を容易に得ることができる。
1気圧、20℃で液体のカルボン酸としては、例えば、炭素数が4以上18以下の分枝鎖且つ脂肪族飽和モノカルボン酸が挙げられる。
カルボン酸として1気圧、20℃で固体のカルボン酸を含む場合、銅粒子及びカルボン酸の均一分散性を高めるとともに、銅粒子どうしの分散性を高める観点から、分散媒を更に含むことが好ましい。
これらの中でも、プロピレングリコール、エチレングリコール、へキシレングリコール、ジエチレングリコール、1,3-ブタンジオール、1,4-ブタンジオール、ジプロピレングリコール、トリプロピレングリコール、ターピネオール及びジヒドロターピネオール等のアルコール、並びにエチルカルビトール及びブチルカルビトール等のエーテルのうち少なくとも一種が好ましい。
高い還元作用を有する焼結助剤としては、ポリエチレングリコール及びポリプロピレングリコールなどのポリエーテルが挙げられる。これらのポリエーテルは、上述した分散媒からは除外される。上述した有機高分子化合物のうち、ポリエチレングリコールを用いる場合、その数平均分子量は、120以上400以下であることが好ましく、180以上400以下であることが更に好ましい。
同様の観点から、導電性組成物の製造に用いる第2銅粒子の平均一次粒子径は、1μm以上10μm以下であることが好ましく、1μm以上8μm以下であることがより好ましい。
第1の導電体及び第2の導電体はそれぞれ、同種の材料であってもよく、あるいは異種の材料であってもよい。
焼結時間は、焼結温度が前記範囲であることを条件として、好ましくは20分以上、より好ましくは20分以上60分以下、更に好ましくは30分以上60分以下である。
更に、分散媒を非含有とした場合には、分散媒に由来する揮発成分に起因するボイドの発生を更に低減できるので、焼結が良好に進行しつつ、一層高い接合強度を発現できる点でも有利である。
銅粉として、平均一次粒子径が0.14μmの球状の第1銅粒子(CH-0200L1、三井金属鉱業社製)と、平均一次粒子径が2.2μmの球状の第2銅粒子(CS20、三井金属鉱業社製)とを用い、質量比として、第1銅粒子:第2銅粒子=90:10の割合で混合したものを用いた。カルボン酸としてネオデカン酸(ヘキシオン社製バーサティック10;1気圧、20℃で液体の分枝鎖且つ第三級飽和脂肪族モノカルボン酸、炭素数10)を用いた。
ネオデカン酸を、銅粉100質量部に対して12.99質量部添加し、ヘラで予備混練した後、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)を1サイクルとした処理を2サイクル行い、ペースト化した。このペーストを、更に3本ロールミルを用いて処理することで更に分散混合を行い、ペースト状の接合用導電性組成物を調製した。
実施例1で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)とを1サイクル実施し、本実施例のペースト状の接合用導電性組成物を調製した。
第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=70:30の割合とし、ネオデカン酸の添加量を銅粉100質量部に対して11.11質量部とした。これら以外は、実施例1と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
実施例3で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)を1サイクル実施し、本実施例のペースト状の接合用導電性組成物を調製した。
第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=50:50の割合とし、ネオデカン酸の添加量を銅粉100質量部に対して11.11質量部とした。これら以外は、実施例1と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
実施例5で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)を1サイクル実施し、本実施例のペースト状の接合用導電性組成物を調製した。
第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=30:70の割合とし、ネオデカン酸の添加量を銅粉100質量部に対して8.11質量部とした。これら以外は、実施例1と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
実施例7で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)を1サイクル実施し、本実施例のペースト状の接合用導電性組成物を調製した。
第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=10:90の割合とした以外は、実施例3と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=10:90の割合とした以外は、実施例4と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
カルボン酸を非含有とし、第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=50:50の割合とし、分散媒としてターピネオールを銅粉100質量部に対して11.11質量部添加した。それ以外は、実施例1と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
比較例3で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)とを1サイクル実施し、本比較例のペースト状の接合用導電性組成物を調製した。
カルボン酸としてデカン酸(直鎖炭素鎖の第一級飽和カルボン酸、炭素数10、富士フイルム和光純薬社製)を銅粉100質量部に対して11.11質量部添加し、分散媒としてターピネオールを銅粉100質量部に対して7.41質量部添加した以外は実施例5と同様にして、ペースト状の導電性組成物を調製した。
ネオデカン酸の添加量を銅粉100質量部に対して、以下の表1に示す量で添加した以外は、実施例5と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
実施例5で用いた第1銅粒子に代えて、平均一次粒子径が0.16μmの球状の第1銅粒子(CH-0200、三井金属鉱業社製)を用いた以外は、実施例5と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
実施例12で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)とを1サイクル実施し、本実施例のペースト状の接合用導電性組成物を調製した。
カルボン酸を非含有とし、第1銅粒子と第2銅粒子の質量比を第1銅粒子:第2銅粒子=50:50の割合とし、分散媒としてターピネオールを銅粉100質量部に対して11.11質量部添加した。それ以外は、実施例12と同様に予備混錬、ペースト化及び分散混合を行って、ペースト状の接合用導電性組成物を調製した。
比較例7で作製した導電性組成物に、銅粉100質量部に対して1質量部の焼結助剤(ポリエチレングリコール300(PEG300))を更に添加し、株式会社シンキー製の自転・公転真空ミキサーARE-500を用いて、攪拌モード(1000rpm×1分間)と脱泡モード(2000rpm×30秒間)とを1サイクル実施し、本比較例のペースト状の接合用導電性組成物を調製した。
実施例及び比較例の導電性組成物をそれぞれガラス板上に10mm×20mmの寸法で塗布し、次いで、260℃で30分間焼結を行い、導電性組成物の焼結体である導電膜を製造した。この導電膜について、三菱アナリテック社製の四探針法比抵抗測定装置であるロレスタMCP-T600を用い、比抵抗(μΩ・cm)を測定した。なお、比較例5の導電性組成物に関しては、経時変化により固体化してしまい、ガラス板に印刷を行なうことができなかったため、導電性の評価は実施しなかった。結果を以下の表1に示す。
銅製のリードフレーム(厚み2.0mm)のチップ搭載部上に、スクリーン印刷によって、実施例又は比較例の導電性組成物を塗布して塗膜を形成した。塗膜は、5mm四方の正方形に形成した。塗膜の厚みは100μmであった。
次いで、塗膜の上に、2mm四方の正方形のSiCチップ(厚み0.37mm)を載置し、塗膜の厚みが50μmとなるようにデジマチックインジケータ(ミツトヨ社製)で調整した。そして、窒素雰囲気下に260℃で30分間焼結を行い、銅板とSiCチップとの間に導電性組成物の焼結体が形成された接合構造を製造した。
上述の方法で得られた接合構造について、それぞれ破断強度を測定した。測定にはXYZTEC社製のボンドテスター Condor Sigmaを用いた。破断強度(MPa)は、破断荷重(N)/接合面積(mm2)で定義される値である。なお、比較例5の導電性組成物に関しては、上述のとおり固体化したため、接合強度の評価は実施しなかった。結果を以下の表1に示す。
Claims (7)
- 銅粉とカルボン酸とが混合されてなり、
前記カルボン酸はその構造中に分枝炭素鎖を有し、
前記銅粉は、走査型電子顕微鏡によって測定した粒度分布のうち1μm未満の領域における累積体積50容量%の体積累積粒径D50が0.11μm以上1μm未満の第1銅粒子と、走査型電子顕微鏡によって測定した粒度分布のうち1μm以上の領域における累積体積50容量%の体積累積粒径D50が1μm以上10μm以下の第2銅粒子とを含み、
前記カルボン酸の含有量が、前記銅粉100質量部に対して6質量部以上24質量部以下である、接合用導電性組成物。 - 前記カルボン酸は、炭素数4以上18以下の脂肪族一価カルボン酸である、請求項1に記載の接合用導電性組成物。
- 前記カルボン酸は第三級カルボン酸である、請求項1又は2に記載の接合用導電性組成物。
- 前記カルボン酸は、1気圧、20℃で液体である、請求項1~3のいずれか一項に記載の接合用導電性組成物。
- 前記カルボン酸はネオデカン酸である、請求項1~4のいずれか一項に記載の接合用導電性組成物。
- 第1の導電体、第2の導電体、並びに第1の導電体と第2の導電体とを接合する接合部位を備え、
前記接合部位が請求項1~5のいずれか一項に記載の接合用導電性組成物の焼結体からなる、接合構造。 - 請求項1~5のいずれか一項に記載の接合用導電性組成物を2つの導電体の間に配し、前記接合用導電性組成物を焼結させる工程を有する、接合構造の製造方法。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP21929139.0A EP4302904A1 (en) | 2021-03-04 | 2021-09-06 | Conductive composition for bonding, bonding structure using same, and manufacturing method thereof |
KR1020237025976A KR20230151101A (ko) | 2021-03-04 | 2021-09-06 | 접합용 도전성 조성물 및 이것을 사용한 접합 구조및 그 제조 방법 |
CN202180092639.5A CN116745048A (zh) | 2021-03-04 | 2021-09-06 | 接合用导电性组合物及使用其的接合结构及其制造方法 |
JP2023503348A JPWO2022185571A1 (ja) | 2021-03-04 | 2021-09-06 | |
US18/275,891 US20240116104A1 (en) | 2021-03-04 | 2021-09-06 | Conductive composition for bonding, bonding structure using same, and manufacturing method thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2021-034019 | 2021-03-04 | ||
JP2021034019 | 2021-03-04 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2022185571A1 true WO2022185571A1 (ja) | 2022-09-09 |
Family
ID=83155281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2021/032627 WO2022185571A1 (ja) | 2021-03-04 | 2021-09-06 | 接合用導電性組成物及びこれを用いた接合構造及びその製造方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20240116104A1 (ja) |
EP (1) | EP4302904A1 (ja) |
JP (1) | JPWO2022185571A1 (ja) |
KR (1) | KR20230151101A (ja) |
CN (1) | CN116745048A (ja) |
TW (1) | TW202236308A (ja) |
WO (1) | WO2022185571A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023190080A1 (ja) * | 2022-03-30 | 2023-10-05 | 三井金属鉱業株式会社 | 接合体の製造方法及び被接合体の接合方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003034802A (ja) | 2001-07-25 | 2003-02-07 | Mitsui Mining & Smelting Co Ltd | 銅粉、その銅粉の製造方法、その銅粉を用いた銅ペースト、及びその銅ペーストを用いたプリント配線板 |
WO2010032841A1 (ja) | 2008-09-19 | 2010-03-25 | 旭硝子株式会社 | 導電性フィラー、導電性ペーストおよび導電膜を有する物品 |
JP2015168878A (ja) | 2014-03-10 | 2015-09-28 | 三井金属鉱業株式会社 | 銅粉 |
JP2017179555A (ja) | 2016-03-31 | 2017-10-05 | 三井金属鉱業株式会社 | 銀コート銅粉 |
JP2017204371A (ja) | 2016-05-11 | 2017-11-16 | 日立化成株式会社 | 導体形成組成物、導体の製造方法、めっき層の製造方法、導体、積層体及び装置 |
JP2019087553A (ja) * | 2017-11-01 | 2019-06-06 | デュポンエレクトロニクスマテリアル株式会社 | 接合用の導電性ペーストおよびこれを用いた電子デバイスの製造方法 |
JP2020020015A (ja) * | 2018-08-02 | 2020-02-06 | 日立化成株式会社 | 接合用金属ペースト、接合体及び接合体の製造方法 |
JP2020035965A (ja) * | 2018-08-31 | 2020-03-05 | 日立化成株式会社 | パワーモジュール |
-
2021
- 2021-09-06 CN CN202180092639.5A patent/CN116745048A/zh active Pending
- 2021-09-06 JP JP2023503348A patent/JPWO2022185571A1/ja active Pending
- 2021-09-06 KR KR1020237025976A patent/KR20230151101A/ko unknown
- 2021-09-06 US US18/275,891 patent/US20240116104A1/en active Pending
- 2021-09-06 EP EP21929139.0A patent/EP4302904A1/en active Pending
- 2021-09-06 WO PCT/JP2021/032627 patent/WO2022185571A1/ja active Application Filing
- 2021-09-16 TW TW110134565A patent/TW202236308A/zh unknown
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003034802A (ja) | 2001-07-25 | 2003-02-07 | Mitsui Mining & Smelting Co Ltd | 銅粉、その銅粉の製造方法、その銅粉を用いた銅ペースト、及びその銅ペーストを用いたプリント配線板 |
WO2010032841A1 (ja) | 2008-09-19 | 2010-03-25 | 旭硝子株式会社 | 導電性フィラー、導電性ペーストおよび導電膜を有する物品 |
JP2015168878A (ja) | 2014-03-10 | 2015-09-28 | 三井金属鉱業株式会社 | 銅粉 |
JP2017179555A (ja) | 2016-03-31 | 2017-10-05 | 三井金属鉱業株式会社 | 銀コート銅粉 |
JP2017204371A (ja) | 2016-05-11 | 2017-11-16 | 日立化成株式会社 | 導体形成組成物、導体の製造方法、めっき層の製造方法、導体、積層体及び装置 |
JP2019087553A (ja) * | 2017-11-01 | 2019-06-06 | デュポンエレクトロニクスマテリアル株式会社 | 接合用の導電性ペーストおよびこれを用いた電子デバイスの製造方法 |
JP2020020015A (ja) * | 2018-08-02 | 2020-02-06 | 日立化成株式会社 | 接合用金属ペースト、接合体及び接合体の製造方法 |
JP2020035965A (ja) * | 2018-08-31 | 2020-03-05 | 日立化成株式会社 | パワーモジュール |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2023190080A1 (ja) * | 2022-03-30 | 2023-10-05 | 三井金属鉱業株式会社 | 接合体の製造方法及び被接合体の接合方法 |
Also Published As
Publication number | Publication date |
---|---|
US20240116104A1 (en) | 2024-04-11 |
EP4302904A1 (en) | 2024-01-10 |
JPWO2022185571A1 (ja) | 2022-09-09 |
CN116745048A (zh) | 2023-09-12 |
KR20230151101A (ko) | 2023-10-31 |
TW202236308A (zh) | 2022-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI516556B (zh) | Metal nano-particle paste, and the use of metal nano-particles paste electronic parts assembly, LED module and printed circuit board circuit formation method | |
KR102158290B1 (ko) | 접합재료, 접합체, 및 접합방법 | |
JP5181434B2 (ja) | 微小銅粉及びその製造方法 | |
JPWO2002035554A1 (ja) | 導電性金属ペースト及びその製造方法 | |
JPWO2007037440A1 (ja) | 導電粉およびその製造方法、導電粉ペースト、導電粉ペーストの製造方法 | |
KR20180059490A (ko) | 도전성 페이스트 및 도전막 | |
JP5039514B2 (ja) | 低抵抗導電性ペースト | |
JP2015004122A (ja) | 金属ナノ粒子ペースト、それを含有する接合材料、およびそれを用いた半導体装置 | |
WO2014155834A1 (ja) | フレーク状の微小粒子 | |
WO2020032161A1 (ja) | 接合用組成物、並びに導電体の接合構造及びその製造方法 | |
JP2023027058A (ja) | 分散体並びにこれを用いた導電性パターン付構造体の製造方法及び導電性パターン付構造体 | |
KR20150064054A (ko) | 은 하이브리드 구리분과 그의 제조법, 상기 은 하이브리드 구리분을 함유하는 도전성 페이스트, 도전성 접착제, 도전성 막 및 전기 회로 | |
JP2016069710A (ja) | ニッケル粒子組成物、接合材及び接合方法 | |
JP4922793B2 (ja) | 混合導電粉及びその製造方法並びに導電ペースト及びその製造方法 | |
CN103137243B (zh) | 导电糊剂以及导电糊剂的制备方法 | |
WO2022185571A1 (ja) | 接合用導電性組成物及びこれを用いた接合構造及びその製造方法 | |
JP6562196B2 (ja) | 銅微粒子焼結体と導電性基板の製造方法 | |
TWI729373B (zh) | 導電性膠及燒結體 | |
JP6722679B2 (ja) | 導電性ペースト | |
KR20130060364A (ko) | 은입자 함유 조성물, 분산액 및 페이스트, 및 이들 각각의 제조 방법 | |
WO2021125161A1 (ja) | 銀ペースト及びその製造方法並びに接合体の製造方法 | |
JP6233792B2 (ja) | 導電性ペースト | |
JP6463195B2 (ja) | ニッケル粒子組成物、接合材及びそれを用いた接合方法 | |
JP6947280B2 (ja) | 銀ペースト及びその製造方法並びに接合体の製造方法 | |
JP6060225B1 (ja) | 銅粉及びその製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 21929139 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2023503348 Country of ref document: JP Kind code of ref document: A |
|
WWE | Wipo information: entry into national phase |
Ref document number: 202180092639.5 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 18275891 Country of ref document: US |
|
WWE | Wipo information: entry into national phase |
Ref document number: 11202305932W Country of ref document: SG |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2021929139 Country of ref document: EP |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
ENP | Entry into the national phase |
Ref document number: 2021929139 Country of ref document: EP Effective date: 20231004 |