WO2022166080A1 - 光掩膜版的形成方法及光掩膜版 - Google Patents

光掩膜版的形成方法及光掩膜版 Download PDF

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WO2022166080A1
WO2022166080A1 PCT/CN2021/101940 CN2021101940W WO2022166080A1 WO 2022166080 A1 WO2022166080 A1 WO 2022166080A1 CN 2021101940 W CN2021101940 W CN 2021101940W WO 2022166080 A1 WO2022166080 A1 WO 2022166080A1
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sub
marks
group
mark
groups
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PCT/CN2021/101940
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English (en)
French (fr)
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朱中钦
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长鑫存储技术有限公司
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Priority to US17/477,822 priority Critical patent/US20220244632A1/en
Publication of WO2022166080A1 publication Critical patent/WO2022166080A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/42—Alignment or registration features, e.g. alignment marks on the mask substrates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
    • G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P40/00—Technologies relating to the processing of minerals
    • Y02P40/50—Glass production, e.g. reusing waste heat during processing or shaping
    • Y02P40/57—Improving the yield, e-g- reduction of reject rates

Definitions

  • the present application relates to the technical field of semiconductor manufacturing, and in particular, to a method for forming a photomask and a photomask.
  • Marking plays a vital role in the semiconductor manufacturing process. By measuring various marks, the quality of the process can be monitored to ensure product yield. In order to improve the utilization of silicon wafers, marks are usually placed in the Scribe Line. With the continuous shrinking of semiconductor process technology nodes, the width of the dicing line is also developing in a smaller and smaller direction, which brings an unfriendly side to the arrangement of marks on the dicing line. For example, for a 90 ⁇ m wide dicing lane, using the traditional mark arrangement method, a set of marks can be placed symmetrically on both sides of the outer ring dicing lane to meet the measurement requirements. However, when the width of the dicing line is reduced to 60 ⁇ m, the traditional two-sided symmetrical arrangement is no longer applicable, for example, during the exposure process, the problem of overlapping marks will be brought about.
  • Embodiments of the present application provide a method for forming a photomask and a photomask, which are used to solve the problem that marks cannot be placed in a scribe line with a narrow width in the prior art.
  • one aspect of the present application provides a method for forming a photomask, comprising the following steps:
  • a first group of marks is formed in the first scribe line, and a second group of marks is formed in the second scribe line, and the first group of marks includes first scribe lines alternately arranged along the extending direction of the first scribe line A sub-mark group and a first space, the second group of marks includes a second sub-mark group and a second space alternately arranged along the extending direction of the second cutting lane, the first sub-mark group and the first sub-mark group The two spaces are aligned and arranged, and the second sub-marker group is aligned with the first space.
  • the present application further provides a photomask, including:
  • the substrate includes a chip area, and a first dicing lane and a second dicing lane located on opposite sides of the chip area;
  • first group of marks located in the first cutting lane, the first set of marks including a first sub-marking group and a first interval alternately arranged along the extending direction of the first cutting lane;
  • a second group of marks is formed in the second cutting lane, the second set of marks includes a second sub-marking group and a second space alternately arranged along the extending direction of the second cutting lane, the first sub-marking The marking group is aligned with the second interval, and the second sub-marking group is aligned with the first interval.
  • the first group of marks and the second group of marks are respectively formed in the first scribe line and the second scribe line on opposite sides of the chip area, and so that the first set of marks includes first sub-mark groups and first intervals alternately arranged along the extending direction of the first cutting lane, and the second set of marks includes alternating along the extending direction of the second cutting lane
  • a second sub-mark group and a second space are arranged, the first sub-mark group is aligned with the second space, and the second sub-mark group is aligned with the first space, Even if the width of the scribe line is narrow, it can meet the requirements of forming a set of marks in the scribe lines on opposite sides of the chip area, and ensure that no mark overlap occurs when the photomask is used for the photolithography process on the wafer. The problem.
  • FIG. 1 is a flowchart of a method for forming a photomask in an embodiment of the present application
  • 2A-2E are schematic diagrams of steps for forming a photomask in an embodiment
  • FIG. 2F is a schematic diagram of the exposure unit (shown by the solid line) and the adjacent exposure unit (shown by the dotted line) obtained by exposing the photomask in this embodiment.
  • FIG. 2G is a schematic diagram of superposition of the first group of marks and the second group of marks obtained by exposing the photomask in this embodiment.
  • FIG. 2H is a schematic diagram of superposition of the first group of marks and the second group of marks obtained by exposing the photomask in another embodiment.
  • FIG. 2I is a schematic diagram of superposition of the first group of marks and the second group of marks obtained by exposing the photomask in another embodiment.
  • FIG. 3 is a schematic diagram of a photomask in an embodiment of the present application.
  • FIG. 1 is a flowchart of the method for forming a photomask in this embodiment
  • FIGS. 2A-2E are the formation of a photomask in this embodiment. Schematic diagram of the steps. As shown in FIG. 1, FIG. 2A-FIG. 2E, the method for forming a photomask provided in this embodiment includes the following steps:
  • step S11 a substrate is provided, and the substrate has a chip region 33 , and a first dicing line 31 and a second dicing line 32 located on opposite sides of the chip region 33 .
  • the base can be a glass substrate required for making a photomask
  • the glass substrate can be rectangular or square
  • the X axis and the Y axis can be the center point of the glass substrate or the glass substrate. Any vertex of the substrate is the X-axis and the Y-axis obtained from the rectangular coordinate system established by the coordinate origin, and the X-axis and the Y-axis may be parallel to the adjacent two sides of the rectangle or square, respectively.
  • first dicing line 31 and the second dicing line 32 located on opposite sides of the chip region 33 along the X-axis direction as an example.
  • the extending directions of the first dicing lane 31 and the second dicing lane 32 are parallel, and the first dicing lane 31 or the second dicing lane 32 may be adjacent to a single chip area 33 or separated by multiple chip areas.
  • the first dicing line 31 and the second dicing line 32 both extend along the Y direction, and there are three chip areas 33 between the first dicing line 31 and the second dicing line 32 .
  • the width of the first scribe line 31 and the second scribe line 32 along the X-axis direction may be less than or equal to 60 ⁇ m.
  • Step S12 forming a first group of marks in the first cutting lane 31 and forming a second group of marks in the second cutting lane 32 , the first group of marks including marks along the first cutting lane 31 .
  • the first sub-mark groups and the first spaces 25 are alternately arranged in the extending direction
  • the second group of marks includes the second sub-mark groups and the second spaces 26 alternately arranged along the extending direction of the second cutting lane 32
  • the first sub-mark group is aligned with the second spacer 26
  • the second sub-mark group is aligned with the first spacer 25 .
  • the first group of marks and the second group of marks are both overlay marks (OVL marks), and the overlay marks are used for detecting the alignment deviation of the upper and lower layers in the photolithography process.
  • the alignment arrangement can be understood as the projection of the first sub-mark group and the second interval 26 on the extending direction of the first cutting line 31 or the second cutting line 32 at least partially coincident, for example, the The projection of the first sub-mark group on the extending direction of the first cutting lane 31 or the second cutting lane 32 completely falls within the projection of the second interval 26 on the extending direction of the first cutting lane 31 or the second cutting lane 32 , or the projection of the first interval 26 on the extending direction of the first cutting lane 31 or the second cutting lane 32 completely falls within the first sub-marking group on the first cutting lane 31 or the second cutting lane 32 in the projection in the extension direction.
  • the center of a sub-mark group and the center of the second spacer 26 are at the same position on the Y-axis.
  • the first sub-mark group and the second spacer 26 are located along the first cutting line 31 and the second space, respectively.
  • a rectangle extending from the second cutting lane 32 has a bottom edge, a fixed edge and a center. Both the first cutting lane 31 and the second cutting lane 32 extend along the Y-axis.
  • the projection of the second sub-mark group and the first space 25 on the extending direction of the first cutting line 31 or the second cutting line 32 at least partially overlap.
  • the second sub-marking group is in the first The projection on the extending direction of a cutting lane 31 or the second cutting lane 32 completely falls within the projection of the first interval 25 on the extending direction of the first cutting lane 31 or the second cutting lane 32, or the first The projection of the interval 25 in the extending direction of the first cutting line 31 or the second cutting line 32 completely falls within the projection of the second sub-mark group in the extending direction of the first cutting line 31 or the second cutting line 32 .
  • the center of the two sub-marking groups and the center of the first spacer 25 are at the same position on the Y-axis.
  • the second sub-marking group and the first spacer 25 are located along the second cutting line 32 and 25, respectively.
  • the rectangle extending from the first cutting lane 31 has a bottom edge, a top edge and a center, and both the second cutting lane 32 and the first cutting lane 31 extend along the Y-axis. As shown in FIG. 2E , the dotted frame on the first cutting lane 31 in FIG.
  • the first group of marks includes three first sub-mark groups and a first space 25 arranged at intervals, and the first sub-mark groups are respectively (211, 212, 213) group, (214, 215, 216) group, and (217, 218) group;
  • the second group of markers includes three second sub-marker groups and a second space 26 arranged at intervals, and the second sub-marker groups are respectively (231, 232, 233) group, (234, 235, 236) group and (237, 238) group; wherein, (211, 212, 213) group, (214, 215, 216) group and (217, 218) group are respectively associated with three second intervals 26 in the Y direction
  • the projections on the (231, 232, 233) groups, (234, 235, 236) and (237, 238) groups respectively overlap with the projections of the three first intervals 25
  • the specific steps of forming a first group of marks in the first cutting lane 31 and forming a second group of marks in the second cutting lane 32 include:
  • a first group of initial marks and a second group of initial marks are provided, the first group of initial marks includes a plurality of first sub-marks continuously arranged along the extending direction of the first cutting lane 31, and the second group of initial marks The mark includes a plurality of second sub-marks continuously arranged along the extending direction of the second cutting lane 32;
  • the first group of marks is formed in the first scribe line 31, and the second group of marks is formed in the second scribe line 32, so that the first sub-mark group is paired with the second spacer alignment, and the second sub-marker group is aligned with the first spacer, as shown in FIG. 2E .
  • the first group of initial marks includes 8 first sub-marks
  • the second group of initial marks includes 8 second sub-marks.
  • the first group of initial marks includes 8 first sub-marks (respectively indicated by reference numerals 211 , 212 , 213 , 214 , 215 , 216 , 217 , and 218 ).
  • Group initial marks to form a plurality of first sub-mark groups (respectively indicated by reference numerals 221, 222, and 223). As shown in FIG.
  • the second group of initial marks also includes 8 second sub-marks (respectively indicated by reference numerals 231, 232, 233, 234, 235, 236, 237, and 238).
  • Two groups of initial marks form a plurality of second sub-mark groups (respectively indicated by reference numerals 241 , 242 and 243 ).
  • the first cutting lane 31 and the second cutting lane 32 are parallel to each other, and both extend along the Y-axis direction.
  • a plurality of first spaces 25 are provided, and a plurality of the first sub-mark groups and a plurality of first spaces 25 are combined to form first sub-mark groups and
  • the first set of indicia of the first space 25 is shown in Figure 2C.
  • a plurality of second spaces 26 are provided, and a plurality of the second sub-marking groups and a plurality of second spaces 26 are combined to form second sub-marking groups and The second set of markings for the second space 26 are shown in Figure 2D.
  • the first group of marks is formed in the first scribe line 31, and the second group of marks is formed in the second scribe line 32, so that the first sub-mark group and the second The spaces are aligned, and the second sub-marker group is aligned with the first spaces, as shown in Figure 2E.
  • the first interval 25 is a blank area between two adjacent first sub-mark groups
  • the second interval 26 is a blank area between two adjacent second sub-mark groups.
  • FIG. 2F shows a schematic diagram of an exposure unit (shown by a solid line) and an adjacent exposure unit (shown by a dotted line) obtained by exposing the photomask in this embodiment. Since the first sub-mark group is aligned with the second space and the second sub-mark group is aligned with the first space, that is, the first sub-mark group and the second sub-mark group The misplaced settings, therefore, resulted in an overlay as shown in Figure 2G, and the problem of overlapping of the first set of markers with the second set of markers did not occur.
  • the first group of initial marks is the same as the second group of initial marks.
  • those skilled in the art can also set the shape of the first sub-mark in the first group of initial marks and the shape of the second sub-mark in the second group of initial marks according to actual needs, so that the The first set of initial marks is different from the second set of initial marks.
  • the number of the first sub-marks in any two of the first sub-marker groups is the same; or, there are two first sub-marker groups in which the number of the first sub-markers is different.
  • the number of the first sub-marks in the plurality of first sub-mark groups may be set to be the same or different according to actual needs.
  • the number of the second sub-marks in the plurality of second sub-mark groups may be set to be the same or different according to actual needs.
  • the eight first sub-marks are divided into three first sub-mark groups, wherein the two first sub-mark groups (respectively indicated by reference numerals 221 and 222 ) each include three first sub-marks sub-marks, and another first sub-mark group (represented by reference numeral 223 ) includes two first sub-marks.
  • the eight second sub-markers are divided into three second sub-marker groups, wherein the two second sub-marker groups (respectively indicated by reference numerals 241 and 242 ) each include three second sub-markers, and the other
  • the two-sub-marker group (shown at 243) includes two second sub-markers.
  • the relative positional relationship with the second group of marks (for example, the alignment relationship between the first sub-mark group and the second interval, and the alignment relationship between the second sub-mark group and the first interval).
  • each first sub-marker group may include one or two first sub-markers
  • each second sub-marker group may include one or two second sub-markers.
  • each first sub-marker group includes one first sub-marker (that is, there is a first interval between two adjacent first sub-markers)
  • each second sub-marker group includes one first submarker second sub-marks (that is, there is a second interval between two adjacent second sub-marks); as shown in FIG.
  • each first sub-mark group includes two first sub-marks (that is, every interval two Each of the first sub-marks is set with a first interval), and each second sub-mark group includes two second sub-marks (that is, a second interval is set every two second sub-marks).
  • the shapes of the first sub-marks in any two of the first sub-mark groups are different.
  • the length of one of the first sub-marking groups along the extending direction of the first cutting lane 31 is less than or equal to the length of one of the second spaces 26 aligned with it along the extending direction of the second cutting lane 35 . length;
  • the length of one of the second sub-marking groups along the extending direction of the second cutting lane 32 is less than or equal to the length of the first space 25 aligned with the extending direction of the first cutting lane 31 .
  • the length of one of the first sub-marker groups along the Y-axis direction is less than or equal to the length of one of the second spaces 26 aligned therewith along the Y-axis direction, and the length of one of the second sub-marker groups along the Y-axis direction
  • the length in the axial direction is less than or equal to the length in the Y-axis direction of one of the first spaces 25 aligned therewith, so as to further avoid overlapping of the first set of marks and the second set of marks during the photolithography process The problem.
  • the width of the first sub-mark, the width of the first interval 25, the width of the second sub-mark are equal.
  • the width of the first sub-mark, the width of the first interval 25 , the width of the second sub-mark and the width of the second interval 26 are all equal. While simplifying the manufacturing process, it also helps to improve the accuracy of exposure.
  • the number and shape of the first sub-marks in each of the first sub-mark groups are the same as the number and shape of the second sub-marks in the corresponding second sub-mark group.
  • the number of the first sub-marker group and the first space 25 is the same as the number of the second space 26 and the second sub-mark group, respectively, and the number of the first sub-marks in each of the first sub-mark groups is equal to
  • the shape is the same as the number and shape of the second sub-marks of the second sub-mark group corresponding thereto.
  • the second sub-mark group corresponding to the first sub-mark group can be understood as that the first sub-mark group corresponds to the second sub-mark group aligned with its adjacent first space 25 . Specifically, as shown in FIG.
  • the first sub-marks in the first sub-mark group (respectively labeled 211 , 212 , 213 ) are aligned with the second sub-mark group where the adjacent first space 25 below them is aligned.
  • the number and shape of the second sub-marks (respectively marked 231, 232, 233) are the same.
  • the first sub-mark group and the second sub-mark group both contain 3 sub-marks, and the first sub-marks 211, 212, and 213 are respectively Bar-in-Bar, AIM, Box-in-Box overlay marks, correspondingly, the second sub-marks 231, 232, 233 are respectively Bar-in-Bar, AIM, Box-in-Box overlay marks;
  • the first sub-marks (respectively referenced as 214 , 215 , 216 ) in a sub-mark group are aligned with the second sub-marks (respectively referenced as 234 , 234 , 234 , 234 , 234 , 234 , 234 , 234 , 234 , 234 , 234 , 234 , 234 , 216 , respectively) of the second sub-marker group in which the first sub-marks (resp.
  • the first sub-marks (respectively 217, 218) in the first sub-mark group are aligned with the first sub-marks in the second sub-mark group with the adjacent first space 25 below them.
  • the two sub-marks (respectively 237, 238) are the same in number and shape. This arrangement can ensure that during exposure, the detection conditions of adjacent exposure units are as consistent as possible, and the detection deviation caused by the placement of the overlay marks can be reduced.
  • FIG. 3 is a schematic diagram of the photomask in the embodiment of the present application.
  • the marks in the photomask provided in this embodiment may be formed by the method shown in FIG. 1 and FIG. 2A- FIG. 2E .
  • the photomask provided in this embodiment includes:
  • a photomask which has a chip area 33 and a first dicing line 31 and a second dicing line 32 on opposite sides of the chip area 33;
  • a first group of marks formed in the first cutting lane 31 , the first set of marks including a first sub-marking group and a first interval 25 alternately arranged along the extending direction of the first cutting lane 31 ;
  • a second group of marks is formed in the second cutting lane 32 , and the second set of marks includes a second sub-marking group and a second interval 26 alternately arranged along the extending direction of the second cutting lane 32 .
  • the first sub-mark group is aligned with the second spacer 26
  • the second sub-mark group is aligned with the first spacer 25 .
  • the first group of marks includes a plurality of first sub-mark groups, and each of the first sub-mark groups includes several first sub-marks;
  • the number of the first sub-marks in any two of the first sub-marker groups is the same; or, there are two first sub-marker groups in which the number of the first sub-markers is different.
  • the shapes of the first sub-marks in any two of the first sub-mark groups are different.
  • the length of one of the first sub-marking groups along the extending direction of the first cutting lane 31 is less than or equal to the length of one of the second spaces 26 aligned along the extending direction of the second cutting lane 32 . length;
  • the length of one of the second sub-marking groups along the extending direction of the second cutting lane 32 is less than or equal to the length of the first space 25 aligned with the extending direction of the first cutting lane 31 .
  • the first group of marks includes a plurality of first sub-mark groups, and each of the first sub-mark groups has several first sub-marks;
  • the second set of marks includes a plurality of second sub-marks, and each of the second sub-marks has several second sub-marks;
  • the width of the first sub-mark, the width of the first space 25, the width of the second sub-mark and the second The widths of the spaces 26 are all equal.
  • the number and shape of the first sub-marks in at least one of the first sub-mark groups are the same as the number and shape of the second sub-marks in one of the second sub-mark groups.
  • the number and shape of the first sub-marks in each of the first sub-mark groups are the same as the number and shape of the second sub-marks in the corresponding second sub-mark group.
  • the first group of marks and the second group of marks are respectively formed in the first scribe line and the second scribe line on opposite sides of a chip area
  • the first set of marks includes first sub-mark groups and first spaces alternately arranged along the extending direction of the first cutting lane
  • the second set of marks includes alternating rows along the extending direction of the second cutting lane
  • a second sub-mark group and a second space of the cloth, the first sub-mark group and the second space are aligned and arranged, and the second sub-mark group and the first space are aligned and arranged such that Even if the width of the scribe line is narrow, it can meet the requirement of forming a set of marks in each of the scribe lines on opposite sides of the chip area. Moreover, it is ensured that the problem of mark overlap does not occur when the photolithography process is performed on the wafer using the photomask.

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Abstract

一种光掩膜版的形成方法及光掩膜版。光掩膜版的形成方法包括如下步骤：提供基底，基底具有芯片区域(33)、以及位于芯片区域(33)相对两侧的第一切割道(31)和第二切割道(32)；于第一切割道(31)中形成第一组标记、并于第二切割道(32)中形成第二组标记，第一组标记包括沿第一切割道(31)的延伸方向交替排布的第一子标记组和第一间隔(25)，第二组标记包括沿第二切割道(32)的延伸方向交替排布的第二子标记组和第二间隔(26)，第一子标记组与第二间隔(26)对准排布、且第二子标记组与第一间隔(25)对准排布。光掩膜版的形成方法及光掩膜版，在切割道宽度较窄的情况下也能够满足在芯片区域(33)相对两侧的切割道中各形成一组标记的要求。

Description

光掩膜版的形成方法及光掩膜版
相关申请引用说明
本申请要求于2021年2月2日递交的中国专利申请号202110141604.8、申请名为“光掩膜版的形成方法及光掩膜版”的优先权，其全部内容以引用的形式附录于此。
技术领域
本申请涉及半导体制造技术领域，尤其涉及一种光掩膜版的形成方法及光掩膜版。
背景技术
标记在半导体制程过程中扮演着至关重要的角色，通过测量各种标记实现对工艺质量的监测以保证产品良率。为了提高硅片的利用率，标记通常被摆放在切割道(Scribe Line)中。随着半导体制程技术节点的不断缩小，切割道的宽度也在朝着越来越小的方向发展，对于标记在切割道上的排布带来了不友好的一面。例如，对于90μm宽度的切割道，采用传统的标记排布方法，可以在外圈切割道的两边对称的各摆放一组标记，以满足量测要求。但是，当切割道的宽度缩小到60μm时，传统的两侧对称的摆放方式则不再适用，例如在曝光过程中，会带来标记重叠的问题。
因此，如何在宽度较窄的切割道中排布标记以提高硅片利用率，是当前亟待解决的技术问题。
发明内容
本申请的实施例提供一种光掩膜版的形成方法及光掩膜版，用于解决现有技术中无法在宽度较窄的切割道中摆放标记的问题。
根据一些实施例，本申请一方面提供了一种光掩膜版的形成方法，包括如下步骤：
提供基底，所述基底具有芯片区域、以及位于所述芯片区域相对两侧的第一切割道和第二切割道；
于所述第一切割道中形成第一组标记、并于所述第二切割道中形成第二组标记，所述第一组标记包括沿所述第一切割道的延伸方向交替排布的第一子标记组和第一间隔，所述第二组标记包括沿所述第二切割道的延伸方向交替排布 的第二子标记组和第二间隔，所述第一子标记组与所述第二间隔对准排布、且所述第二子标记组与所述第一间隔对准排布。
根据一些实施例，本申请另一方面还提供了一种光掩膜版，包括：
基底，所述基底包括芯片区域、以及位于所述芯片区域相对两侧的第一切割道和第二切割道；
第一组标记，位于所述第一切割道中，所述第一组标记包括沿所述第一切割道的延伸方向交替排布的第一子标记组和第一间隔；
第二组标记，形成于所述第二切割道中，所述第二组标记包括沿所述第二切割道的延伸方向交替排布的第二子标记组和第二间隔，所述第一子标记组与所述第二间隔对准排布、且所述第二子标记组与所述第一间隔对准排布。
本申请的实施例提供的光掩膜版的形成方法及光掩膜版，通过在芯片区域相对两侧的第一切割道和第二切割道中分别形成第一组标记和第二组标记，且使得所述第一组标记包括沿所述第一切割道的延伸方向交替排布的第一子标记组和第一间隔，所述第二组标记包括沿所述第二切割道的延伸方向交替排布的第二子标记组和第二间隔，所述第一子标记组与所述第二间隔对准排布、且所述第二子标记组与所述第一间隔对准排布，使得即便是切割道的宽度较窄，也能够满足在芯片区域相对两侧的切割道中各形成一组标记的要求，保证利用光掩膜版在晶圆上进行光刻工艺时不会产生标记重叠的问题。
附图说明
附图1是本申请实施例中光掩膜版的形成方法流程图；
附图2A-2E是一实施例中光掩膜版的形成步骤示意图；
附图2F是本实施例中光掩模版进行曝光得到的曝光单元(实线所示)与相邻的曝光单元(虚线所示)的示意图。
附图2G是本实施例中光掩模版进行曝光得到的第一组标记和第二组标记的叠加示意图。
附图2H是另一实施例中光掩模版进行曝光得到的第一组标记和第二组标记的叠加示意图。
附图2I是又一实施例中光掩模版进行曝光得到的第一组标记和第二组标记的叠加示意图。
附图3是本申请的一实施例中光掩膜版的示意图。
具体实施例
下面结合附图对本申请的实施例提供的光掩膜版的形成方法及光掩膜版做详细说明。
本申请实施例提供了一种光掩膜版的形成方法，附图1是本实施例中光掩膜版的形成方法流程图，附图2A-2E是本实施例中光掩膜版的形成步骤示意图。如图1、图2A-图2E所示，本实施例提供的光掩膜版的形成方法，包括如下步骤：
步骤S11，提供基底，所述基底具有芯片区域33、以及位于所述芯片区域33相对两侧的第一切割道31和第二切割道32。
如图2E所示，在所述基底上形成多条切割道，多条所述切割道分别沿X轴方向和Y轴方向延伸，从而将所述基底划分为多个芯片区域33。具体的，基底可以为制作光掩膜版所需的玻璃基板，所述玻璃基板可以为矩形或正方形，所述X轴和所述Y轴可以为以所述玻璃基板的中心点或所述玻璃基板的任一顶点为坐标原点建立的直角坐标系得到的所述X轴和所述Y轴，所述X轴和所述Y轴可以与所述矩形的或正方形的相邻两边分别平行。本实施例以位于所述芯片区域33沿X轴方向相对两侧的所述第一切割道31和所述第二切割道32为例进行说明。第一切割道31和第二切割道32的延伸方向平行，所述第一切割道31或所述第二切割道32可以与单个所述芯片区域33相邻，也可以相隔多个芯片区域。本实施例中，第一切割道31和第二切割道32均沿Y方向延伸，且第一切割道31和第二切割道32之间相隔三个芯片区域33。所述第一切割道31和所述第二切割道32沿X轴方向的宽度可以小于或者等于60μm。
步骤S12，于所述第一切割道31中形成第一组标记、并于所述第二切割道32中形成第二组标记，所述第一组标记包括沿所述第一切割道31的延伸方向交替排布的第一子标记组和第一间隔25，所述第二组标记包括沿所述第二切割道32的延伸方向交替排布的第二子标记组和第二间隔26，所述第一子标记组与所述第二间隔26对准排布、且所述第二子标记组与所述第一间隔25对准排布。在一示例中，所述第一组标记和所述第二组标记均为套刻标记(OVL mark)，所述套刻标记用于光刻工艺中上下层对准偏差的检测。所述对准排布 可以理解为，所述第一子标记组和所述第二间隔26在第一切割道31或第二切割道32的延伸方向上的投影至少部分重合，例如，所述第一子标记组在第一切割道31或第二切割道32的延伸方向上的投影完全落入所述第二间隔26在第一切割道31或第二切割道32的延伸方向上的投影中，或者所述第一间隔26在第一切割道31或第二切割道32的延伸方向上的投影完全落入所述第一子标记组在第一切割道31或第二切割道32的延伸方向上的投影中。进一步的，所述第一子标记组的底边和所述第二间隔26的底边、或所述第一子标记组的顶边和所述第二间隔26的顶边、或所述第一子标记组的中心和所述第二间隔26的中心在Y轴上的位置相同，具体的，所述第一子标记组和所述第二间隔26均为分别沿第一切割道31和第二切割道32延伸的矩形，所述矩形具有底边、定边和中心，所述第一切割道31和第二切割道32均沿Y轴延伸。同样的，所述第二子标记组和所述第一间隔25在第一切割道31或第二切割道32的延伸方向上的投影至少部分重合，例如，所述第二子标记组在第一切割道31或第二切割道32的延伸方向上的投影完全落入所述第一间隔25在第一切割道31或第二切割道32的延伸方向上的投影中，或者所述第一间隔25在第一切割道31或第二切割道32的延伸方向上的投影完全落入所述第二子标记组在第一切割道31或第二切割道32的延伸方向上的投影中。进一步的，所述第二子标记组的底边和所述第一间隔25的底边、或所述第二子标记组的顶边和所述第一间隔25的顶边、或所述第二子标记组的中心和所述第一间隔25的中心在Y轴上的位置相同，具体的，所述第二子标记组和所述第一间隔25均为分别沿第二切割道32和第一切割道31延伸的矩形，所述矩形具有底边、顶边和中心，第二切割道32和第一切割道31均沿Y轴延伸。如图2E所示，图2E中所述第一切割道31上的虚线框中为所述第一组标记，所述第二切割道32上的虚线框中为所述第二组标记，第一切割道31和第二切割道32均沿Y方向延伸。所述第一组标记包括3个间隔排布的第一子标记组和第一间隔25，第一子标记组分别为(211，212，213)组、(214，215，216)组、和(217，218)组；所述第二组标记包括3个间隔排布的第二子标记组和第二间隔26，第二子标记组分别为(231，232，233)组、(234，235，236)组和(237，238)组；其中，(211，212，213)组、(214，215，216)组和(217，218)组分别与3个第 二间隔26在Y方向上的投影相互重叠，(231，232，233)组、(234，235，236)组和(237，238)组分别与3个第一间隔25在Y轴上的投影相互重叠。图2E中仅为示意性的表示第一组标记和第二组标记的相对位置关系，在实际的工艺中，所述第一组标记位于所述第一切割道31内部、所述第二组标记位于所述第二切割道32内部。
可选的，于所述第一切割道31中形成第一组标记、并于所述第二切割道32中形成第二组标记的具体步骤包括：
提供第一组初始标记和第二组初始标记，所述第一组初始标记中包括沿所述第一切割道31的延伸方向连续排布的多个第一子标记，所述第二组初始标记包括沿所述第二切割道32的延伸方向连续排布的多个第二子标记；
拆分所述第一组初始标记，形成多个第一子标记组，每一所述第一子标记组中包括若干所述第一子标记，如图2A所示；
组合多个所述第一子标记组与多个第一间隔25，形成包括沿所述第一切割道31的延伸方向交替排布的第一子标记组和第一间隔25的所述第一组标记，如图2C所示；
拆分所述第二组初始标记，形成多个第二子标记组，每一所述第二子标记组中包括若干所述第二子标记，如图2B所示；
组合多个所述第二子标记组与多个第二间隔26，形成包括沿所述第二切割道32的延伸方向交替排布的第二子标记组和第二间隔26的所述第二组标记，如图2D所示；
形成所述第一组标记于所述第一切割道31中、并形成所述第二组标记于所述第二切割道32中，使得所述第一子标记组与所述第二间隔对准、且所述第二子标记组与所述第一间隔对准，如图2E所示。
本实施例中所述的多个是指两个及两个以上。以下以所述第一组初始标记包括8个第一子标记、所述第二组初始标记包括8个第二子标记为例进行说明。如图2A所示，所述第一组初始标记包括8个第一子标记(分别为标号211、212、213、214、215、216、217、218所示)，通过拆分所述第一组初始标记，形成多个第一子标记组(分别为标号221、222、223所示)。如图2B所示，所述第二组初始标记也包括8个第二子标记(分别为标号231、232、233、234、 235、236、237、238所示)，通过拆分所述第二组初始标记，形成多个第二子标记组(分别为标号241、242、243所示)。所述第一切割道31与所述第二切割道32相互平行，且均沿Y轴方向延伸。提供多个第一间隔25，并组合多个所述第一子标记组与多个第一间隔25，形成包括沿所述第一切割道31的延伸方向交替排布的第一子标记组和第一间隔25的所述第一组标记，如图2C所示。提供多个第二间隔26，并组合多个所述第二子标记组与多个第二间隔26，形成包括沿所述第二切割道32的延伸方向交替排布的第二子标记组和第二间隔26的所述第二组标记，如图2D所示。最后，形成所述第一组标记于所述第一切割道31中、并形成所述第二组标记于所述第二切割道32中，使得所述第一子标记组与所述第二间隔对准、且所述第二子标记组与所述第一间隔对准，如图2E所示。所述第一间隔25为相邻两个所述第一子标记组之间的空白区域，所述第二间隔26为相邻两个所述第二子标记组之间的空白区域。
附图2F表示本实施例中光掩模版进行曝光得到的曝光单元(实线所示)与相邻的曝光单元(虚线所示)的示意图。由于所述第一子标记组与所述第二间隔对准、且所述第二子标记组与所述第一间隔对准，即所述第一子标记组与所述第二子标记组错位设置，因此，得到的叠加图如图2G所示，不会发生第一组标记与第二组标记重叠的问题。
可选的，所述第一组初始标记与所述第二组初始标记相同。
在其他实施例中，本领域技术人员还可以根据实际需要设置所述第一组初始标记中第一子标记的形状、以及所述第二组初始标记中第二子标记的形状，使得所述第一组初始标记与所述第二组初始标记不同。
可选的，任意两个所述第一子标记组中所述第一子标记的数量相同；或者，存在两个所述第一子标记组中所述第一子标记的数量不同。
具体来说，在拆分所述第一组初始标记的过程中，可以根据实际需要将多个第一子标记组中所述第一子标记的数量设置为相同或者不同。同样的，在拆分所述第二组初始标记的过程中，可以根据实际需要将多个第二子标记组中所述第二子标记的数量设置为相同或者不同。本实施例中是以将8个所述第一子标记分为三个第一子标记组，其中两个第一子标记组(分别为标号221、222所示)中均包括三个第一子标记，另外一个第一子标记组(标号为223所示) 中包括两个第一子标记。将8个所述第二子标记分为三个第二子标记组，其中两个第二子标记组(分别为标号241、242所示)中均包括三个第二子标记，另外一个第二子标记组(标号为243所示)中包括两个第二子标记。所述第一子标记组或所述第二子标记组的数量越少，则相应的所述第一间隔25或第二间隔26的数量越少，越有助于控制所述第一组标记与所述第二组标记的相对位置关系(例如所述第一子标记组与所述第二间隔的对准关系、所述第二子标记组与所述第一间隔的对准关系)。
在其他实施例中，也可以使得每个第一子标记组中包括一个或者两个第一子标记，每个第二子标记组中包括一个或者两个第二子标记。如图2H所示，每个第一子标记组中包括一个第一子标记(即两个相邻的第一子标记之间具有一个第一间隔)，每个第二子标记组中包括一个第二子标记(即两个相邻的第二子标记之间具有一个第二间隔)；如图2I所示，每个第一子标记组中包括两个第一子标记(即每间隔两个所述第一子标记设置一个第一间隔)，每个第二子标记组中包括两个第二子标记(即每间隔两个所述第二子标记设置一个第二间隔)。
可选的，任意两个所述第一子标记组内的所述第一子标记的形状均不同。
可选的，一个所述第一子标记组沿所述第一切割道31延伸方向上的长度小于或者等于与其对准的一个所述第二间隔26沿所述第二切割道35延伸方向上的长度；
一个所述第二子标记组沿所述第二切割道32延伸方向上的长度小于或者等于与其对准的一个所述第一间隔25沿所述第一切割道31延伸方向上的长度。
具体来说，一个所述第一子标记组沿Y轴方向的长度小于或者等于与其对准的一个所述第二间隔26沿Y轴方向的长度，且一个所述第二子标记组沿Y轴方向上的长度小于或者等于与其对准的一个所述第一间隔25沿Y轴方向上的长度，从而进一步避免在光刻过程中发生所述第一组标记与所述第二组标记重叠的问题。
可选的，在沿所述第一切割道31指向所述第二切割道32的方向上，所述第一子标记的宽度、所述第一间隔25的宽度、所述第二子标记的宽度和所述 第二间隔26的宽度均相等。
具体来说，在沿X轴方向上，所述第一子标记的宽度、所述第一间隔25的宽度、所述第二子标记的宽度和所述第二间隔26的宽度均相等，在简化制程工艺的同时，也有助于提高曝光的精准度。
可选的，每一所述第一子标记组中的所述第一子标记的数量和形状与对应的所述第二子标记组中的所述第二子标记的数量和形状均相同。具体的，第一子标记组和第一间隔25的数量分别与第二间隔26和第二子标记组的数量相同，且每一所述第一子标记组中的第一子标记的数量和形状与其对应的所述第二子标记组的第二子标记的数量和形状均相同。所述第一子标记组对应的所述第二子标记组可以理解为，所述第一子标记组与其相邻的第一间隔25所对准的第二子标记组相对应。具体的，如图2E所示，第一子标记组中的第一子标记(分别为标号211、212、213)与其下方相邻的第一间隔25所对准的第二子标记组中的第二子标记(分别为标号231、232、233)的数量和形状相同，例如，第一子标记组和第二子标记组均包含3个子标记，第一子标记211、212、213分别为Bar-in-Bar、AIM、Box-in-Box套刻标记，对应的，第二子标记231、232、233也分别为Bar-in-Bar、AIM、Box-in-Box套刻标记；第一子标记组中的第一子标记(分别为标号214、215、216)与其下方相邻的第一间隔25所对准的第二子标记组中的第二子标记(分别为标号234、235、236)的数量和形状相同；第一子标记组中的第一子标记(分别为标号217、218)与其下方相邻的第一间隔25所对准的第二子标记组中的第二子标记(分别为标号237、238)的数量和形状相同。如此设置，可以保证曝光时，相邻曝光单元的检测条件尽量一致，减少因为套刻标记摆放位置带来的检测偏差。
不仅如此，本实施例还提供了一种光掩膜版，附图3是本申请的实施例中光掩膜版的示意图。本实施例中提供的光掩膜版中的标记可以采用如图1、图2A-图2E所示的方法形成。如图3所示，本实施例提供的光掩膜版，包括：
光掩膜版，所述光掩膜版上具有芯片区域33、以及位于所述芯片区域33相对两侧的第一切割道31和第二切割道32；
第一组标记，形成于所述第一切割道31中，所述第一组标记包括沿所述第一切割道31的延伸方向交替排布的第一子标记组和第一间隔25；
第二组标记，形成于所述第二切割道32中，所述第二组标记包括沿所述第二切割道32的延伸方向交替排布的第二子标记组和第二间隔26，所述第一子标记组与所述第二间隔26对准排布、且所述第二子标记组与所述第一间隔25对准排布。
可选的，所述第一组标记包括多个第一子标记组，每一所述第一子标记组中包括若干第一子标记；
任意两个所述第一子标记组中所述第一子标记的数量相同；或者，存在两个所述第一子标记组中所述第一子标记的数量不同。
可选的，任意两个所述第一子标记组内的所述第一子标记的形状均不同。
可选的，一个所述第一子标记组沿所述第一切割道31延伸方向上的长度小于或者等于与其对准的一个所述第二间隔26沿所述第二切割道32延伸方向上的长度；
一个所述第二子标记组沿所述第二切割道32延伸方向上的长度小于或者等于与其对准的一个所述第一间隔25沿所述第一切割道31延伸方向上的长度。
可选的，所述第一组标记中包括多个第一子标记组，每一所述第一子标记组中具有若干第一子标记；
所述第二组标记中包括多个第二子标记组，每一所述第二子标记组中具有若干第二子标记；
在沿所述第一切割道指向所述第二切割道的方向上，所述第一子标记的宽度、所述第一间隔25的宽度、所述第二子标记的宽度和所述第二间隔26的宽度均相等。
可选的，至少存在一个所述第一子标记组中的所述第一子标记的数量和形状与一个所述第二子标记组中的所述第二子标记的数量和形状相同。
可选的，每一所述第一子标记组中的所述第一子标记的数量和形状与对应的所述第二子标记组中的所述第二子标记的数量和形状均相同。
本实施例提供的光掩膜版的形成方法及光掩膜版，通过在一芯片区域相对两侧的第一切割道和第二切割道中分别形成第一组标记和第二组标记，且使得所述第一组标记包括沿所述第一切割道的延伸方向交替排布的第一子标记组 和第一间隔，所述第二组标记包括沿所述第二切割道的延伸方向交替排布的第二子标记组和第二间隔，所述第一子标记组与所述第二间隔对准排布、且所述第二子标记组与所述第一间隔对准排布，使得即便是切割道的宽度较窄，也能够满足在芯片区域相对两侧的切割道中各形成一组标记的要求。而且，保证利用光掩膜版在晶圆上进行光刻工艺时不会产生标记重叠的问题。
以上所述仅是本申请的一些实施例，应当指出，对于本技术领域的普通技术人员，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (15)

  1. 一种光掩膜版的形成方法，包括：
    提供基底，所述基底具有芯片区域、以及位于所述芯片区域相对两侧的第一切割道和第二切割道；
    于所述第一切割道中形成第一组标记、并于所述第二切割道中形成第二组标记，所述第一组标记包括沿所述第一切割道的延伸方向交替排布的第一子标记组和第一间隔，所述第二组标记包括沿所述第二切割道的延伸方向交替排布的第二子标记组和第二间隔，所述第一子标记组与所述第二间隔对准排布、且所述第二子标记组与所述第一间隔对准排布。
  2. 根据权利要求1所述的光掩膜版的形成方法，其中，于所述第一切割道中形成第一组标记、并于所述第二切割道中形成第二组标记的具体步骤包括：
    提供第一组初始标记和第二组初始标记，所述第一组初始标记中包括沿所述第一切割道的延伸方向连续排布的多个第一子标记，所述第二组初始标记包括沿所述第二切割道的延伸方向连续排布的多个第二子标记；
    拆分所述第一组初始标记，形成多个第一子标记组，每一所述第一子标记组中包括若干所述第一子标记；
    组合多个所述第一子标记组与多个第一间隔，形成包括沿所述第一切割道的延伸方向交替排布的第一子标记组和第一间隔的所述第一组标记；
    拆分所述第二组初始标记，形成多个第二子标记组，每一所述第二子标记组中包括若干所述第二子标记；
    组合多个所述第二子标记组与多个第二间隔，形成包括沿所述第二切割道的延伸方向交替排布的第二子标记组和第二间隔的所述第二组标记；
    形成所述第一组标记于所述第一切割道中、并形成所述第二组标记于所述第二切割道中，使得所述第一子标记组与所述第二间隔对准、且所述第二子标记组与所述第一间隔对准。
  3. 根据权利要求2所述的光掩膜版的形成方法，其中，任意两个所述第一子标记组中所述第一子标记的数量相同；或者，存在两个所述第一子标记组中所述第一子标记的数量不同。
  4. 根据权利要求2所述的光掩膜版的形成方法，其中，任意两个所述第一子标记组内的所述第一子标记的形状均不同。
  5. 根据权利要求2所述的光掩膜版的形成方法，其中，一个所述第一子标记组沿所述第一切割道延伸方向上的长度小于或者等于与其对准的一个所述第二间隔沿所述第二切割道延伸方向上的长度；
    一个所述第二子标记组沿所述第二切割道延伸方向上的长度小于或者等于与其对准的一个所述第一间隔沿所述第一切割道延伸方向上的长度。
  6. 根据权利要求2所述的光掩膜版的形成方法，其中，在沿所述第一切割道指向所述第二切割道的方向上，所述第一子标记的宽度、所述第一间隔的宽度、所述第二子标记的宽度和所述第二间隔的宽度均相等。
  7. 根据权利要求2所述的光掩膜版的形成方法，其中，所述第一组初始标记与所述第二组初始标记相同。
  8. 根据权利要求2所述的光掩膜版，其中，每一所述第一子标记组中的所述第一子标记的数量和形状与对应的所述第二子标记组中的所述第二子标记的数量和形状均相同。
  9. 一种光掩膜版，包括：
    基底，所述基底包括芯片区域、以及位于所述芯片区域相对两侧的第一切割道和第二切割道；
    第一组标记，位于所述第一切割道中，所述第一组标记包括沿所述第一切割道的延伸方向交替排布的第一子标记组和第一间隔；
    第二组标记，形成于所述第二切割道中，所述第二组标记包括沿所述第二切割道的延伸方向交替排布的第二子标记组和第二间隔，所述第一子标记组与所述第二间隔对准排布、且所述第二子标记组与所述第一间隔对准排布。
  10. 根据权利要求9所述的光掩膜版，其中，所述第一组标记包括多个第一子标记组，每一所述第一子标记组中包括若干第一子标记；
    任意两个所述第一子标记组中所述第一子标记的数量相同；或者，存在两个所述第一子标记组中所述第一子标记的数量不同。
  11. 根据权利要求10所述的光掩膜版，其中，任意两个所述第一子标记组内的所述第一子标记的形状均不同。
  12. 根据权利要求9所述的光掩膜版，其中，一个所述第一子标记组沿所述第一切割道延伸方向上的长度小于或者等于与其对准的一个所述第二间隔沿所述第二切割道延伸方向上的长度；
    一个所述第二子标记组沿所述第二切割道延伸方向上的长度小于或者等于与其对准的一个所述第一间隔沿所述第一切割道延伸方向上的长度。
  13. 根据权利要求9所述的光掩膜版，其中，所述第一组标记中包括多个第一子标记组，每一所述第一子标记组中具有若干第一子标记；
    所述第二组标记中包括多个第二子标记组，每一所述第二子标记组中具有若干第二子标记；
    在沿所述第一切割道指向所述第二切割道的方向上，所述第一子标记的宽度、所述第一间隔的宽度、所述第二子标记的宽度和所述第二间隔的宽度均相等。
  14. 根据权利要求13所述的光掩膜版，其中，至少存在一个所述第一子标记组中的所述第一子标记的数量和形状与一个所述第二子标记组中的所述第二子标记的数量和形状相同。
  15. 根据权利要求14所述的光掩膜版，其中，每一所述第一子标记组中的所述第一子标记的数量和形状与对应的所述第二子标记组中的所述第二子标记的数量和形状均相同。
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