WO2022156133A1 - 封装基板以及封装结构 - Google Patents
封装基板以及封装结构 Download PDFInfo
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- WO2022156133A1 WO2022156133A1 PCT/CN2021/100847 CN2021100847W WO2022156133A1 WO 2022156133 A1 WO2022156133 A1 WO 2022156133A1 CN 2021100847 W CN2021100847 W CN 2021100847W WO 2022156133 A1 WO2022156133 A1 WO 2022156133A1
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Definitions
- the present application relates to the field of semiconductor technology, and in particular, to a package substrate and a package structure.
- Packaging plays an important role in chips used in various integrated circuits.
- the package substrate applied to the chip package plays the role of placing, fixing, sealing, protecting the chip and enhancing the electrothermal performance. At the same time, it is also a bridge between the chip and the external circuit.
- the quality of packaging technology also directly affects the performance of the chip itself and the design and manufacture of the printed circuit board (PCB) connected to it, so it is very important.
- a plating bar is provided on the top of the substrate to connect a plurality of associated signal lines for providing signals for the chip.
- This design greatly occupies the area on the top of the substrate, so that each power supply line on the top of the substrate needs to be arranged to avoid the plating strips.
- the power cables are usually longer in length and thinner in width, resulting in higher DC resistance, which may lead to the problem of excessive DC voltage drop.
- a package substrate and a package structure are provided.
- the present application provides a packaging substrate, which is applied to chip packaging, including:
- the power line is used to supply power to the chip
- the signal line is used to provide a signal to the chip
- a second conductive layer located at the bottom of the substrate, includes a first pad and a local interconnection line, the first pad is electrically connected to the signal line correspondingly, and a plurality of the first pads pass through the local The interconnection wires are electrically connected.
- the first pad on the bottom of the substrate is electrically connected to the signal line on the top of the substrate.
- a plurality of associated signal lines are connected by connecting the associated first pads with local interconnect lines, so that the top of the substrate no longer needs to be provided with plating strips.
- FIG. 1 is a schematic structural diagram of a package structure provided in an embodiment
- FIG. 2 is a schematic cross-sectional view of a package structure provided in an embodiment
- FIG. 3 is a schematic structural diagram of a package substrate provided in an embodiment at an angle
- FIG. 4 is a schematic structural diagram of a package substrate provided in an embodiment from another angle
- FIG. 5 is a schematic diagram of a partial plane structure of a second conductive layer provided in an embodiment
- FIG. 6 is a cross-sectional partial structural schematic diagram of a package substrate provided in an embodiment
- FIG. 7 is a schematic diagram of a planar structure of a package substrate of a conventional technology.
- first conductive plug is replaced with a second conductive plug, and similarly, the second conductive plug can be replaced with a first conductive plug.
- Spatial relational terms such as “under”, “below”, “below”, “under”, “above”, “above”, etc., in This may be used to describe the relationship of one element or feature to other elements or features shown in the figures. It should be understood that in addition to the orientation shown in the figures, the spatially relative terms encompass different orientations of the device in use and operation. For example, if the device in the figures is turned over, elements or features described as “below” or “beneath” or “beneath” other elements or features would then be oriented “above” the other elements or features. Thus, the exemplary terms “below” and “under” can encompass both an orientation of above and below. In addition, the device may also include additional orientations (e.g., rotated 90 degrees or other orientations) and the spatial descriptors used herein interpreted accordingly.
- additional orientations e.g., rotated 90 degrees or other orientations
- the present application proposes a package substrate and a package structure that can prevent the problem of excessive DC voltage drop.
- a package structure including a chip 100 , a package substrate 200 and leads 300 .
- the lead 300 may be a metal wire or the like, one end of which is connected to the chip 100 and the other end is connected to the package substrate 200 .
- the chip 100 may be a chip applied to various integrated circuits. On the same package structure, the number of chips 100 may be one or more.
- the multiple chips 100 can be stacked and arranged to improve the integration density of the package structure.
- the encapsulation structure further includes the adhesive film layer 400 .
- the adhesive film 400 connects two adjacent chips 100 and the package substrate 200 and the chips 100. Please refer to FIG. 2 , between the package substrate 200 and the bottommost chip 200 and between two adjacent chips 100 are connected by an adhesive film 400 .
- a plurality of chips can also be arranged in a staggered stack, and two adjacent chips 100 are electrically connected to the packaging substrate 200 through leads 300 on opposite sides respectively.
- the first chip, the third chip and the fifth chip are connected to the package via the leads 300 on the left side of the chip.
- the substrate 200 is electrically connected, and the second chip, the fourth chip, and the sixth chip are electrically connected to the packaging substrate 200 on the right side of the chip through the leads 300 .
- the wire density can be effectively reduced, thereby reducing the difficulty of the wire process.
- the reduction in lead density can effectively prevent mutual interference between the leads, thereby improving the reliability of the package structure.
- the encapsulation structure may further include a plastic encapsulation layer 500 .
- the plastic encapsulation layer 500 covers the chip 100, so that the chip can be isolated from the outside, so as to prevent impurities in the air from corroding the circuit of the chip and thereby reducing the electrical performance of the chip.
- the chip encapsulated by the plastic encapsulation layer 500 is also more convenient for installation and transportation.
- the package substrate 200 includes a base 210 , a first conductive layer 220 and a second conductive layer 230 .
- the first conductive layer 220 is located on top of the substrate 210 .
- the second conductive layer 230 is located at the bottom of the substrate 210 .
- the first conductive layer 220 and the second conductive layer 230 may be, but not limited to, metal layers.
- the first conductive layer 220 includes power lines 221 and signal lines 222 .
- the power line 221 is used to supply power to the chip 100 .
- the power line 221 may include various types of power lines 221 that provide power voltages such as VDDQ, VPP, VDD, and the like.
- the signal lines 222 are used to provide signals to the chip 100 .
- the signal line 222 may include various types of signal lines that transmit DQ, DQS and other signals.
- the second conductive layer 230 includes first pads 231 .
- First solder balls (not shown) may be formed on the first pads 231 to be electrically connected to external circuits.
- the first solder balls may be, but are not limited to, solder balls.
- the first pad 231 is electrically connected to the signal line 222 correspondingly, so as to provide a signal for the signal line 222 .
- the second conductive layer 230 further includes local interconnect lines 232 .
- Local interconnect lines 232 connect the plurality of associated first pads 231.
- first pads 231 are electrically connected to the signal lines 222 , connecting a plurality of associated first pads 231 can realize the connection of a plurality of associated signal wires 222 .
- a plurality of associated signal lines means “a plurality of signal lines of the same type that need to be electrically connected together", and "a plurality of associated first pads” means “electrically connected to a plurality of associated signal lines” multiple first pads”.
- a plurality of associated signal lines 222 are connected by means of the local interconnect lines 232 connecting the associated first pads 231, so that the top of the substrate 210 no longer needs a plating bar (ie, the plating bar 10). set up.
- this embodiment can effectively widen the line width of the power line and effectively increase the cross-section, thereby effectively reducing the DC resistance impedance of the power line, thereby effectively preventing the problem that the DC voltage drop exceeds the standard.
- the first pads 231 and the corresponding signal lines 222 are electrically connected through local interconnect lines 232 . That is, one end of the local interconnection line 232 is electrically connected to the signal line 222 , and the other end is electrically connected to the first pad 231 , thereby realizing the electrical connection between the first pad 231 and the corresponding signal line 222 . At this time, flexible arrangement of the first pads 231 can be facilitated.
- the manner in which the first pad 231 is electrically connected to the signal line 222 is not limited to this.
- the first pad 231 can also be directly connected to the signal line 222 through a corresponding conductive plug.
- the second conductive layer 230 includes a wiring layer and a pad layer.
- the local interconnection lines 232 are located at the wiring layer, and the first pads 231 are located at the pad layer. And, the pad layer is formed on the wiring layer.
- the local interconnect lines 232 and the first pads 231 are formed in different layers. Also, the pad layer is formed before the wiring layer is formed.
- the local interconnect lines 232 and the first pads 231 may be formed through different processes according to the actual requirements of the local interconnect lines 232 and the first pads 231 .
- the local interconnect lines 232 formed under the first pads 231 connect a plurality of associated different first pads 231 . Therefore, it has a portion covered by the first pad 231 and a portion not covered by the first pad 231.
- a portion of the local interconnection line 232 not covered by the first pad 231 may have a bent corner.
- the bending angle may be set to be an obtuse angle, thereby preventing signal emission of the local interconnection line 232 at the bending position, thereby affecting the transmission of electrical signals.
- the wiring layer may be formed through an electroplating process.
- the local interconnection line 232 may include a lead-in end 2321 and at least two interconnection lines 2322 connected to the lead-in end 2321 .
- the electroplating solution is introduced from the position of the lead-in end 2321 and flows to the position of each interconnection line 2312 , thereby forming the local interconnection line 232 including the lead-in end 2321 and the interconnection line 2322 .
- the wiring layer is not necessarily formed by the above-mentioned electroplating process.
- the disposition form of the second conductive layer 230 may not be limited to the form including a wiring layer and a pad layer.
- the local interconnect line 232 and the first pad 231 may also be formed on the same conductive film layer.
- the first pad 231 and the corresponding signal line 222 may also be electrically connected through the local interconnection line 232 .
- the first pad 231 can also be directly electrically connected to the corresponding signal line 222 through a corresponding conductive plug or the like.
- the second conductive layer 230 may include more conductive functional film layers, which are not limited in the present application.
- the first conductive layer 220 further includes a first solder joint 223 and a second solder joint 224 .
- the first solder joints 223 and the second solder joints 224 are both electrically connected to the chip 100 through the leads 300 .
- first pad 223 is connected to the signal line 222, so that the signal line 222 provides a signal for the chip.
- the second solder joint 224 is connected to the power line 221 so that the power line 221 supplies power to the chip.
- first solder joint 223 and the second solder joint 224 are conductive areas for connecting with the lead 300 .
- chip pads corresponding to the first pads 223 and the second pads 224 are usually provided on the chip 100 for connecting with the leads 300 .
- Each lead 300 is usually connected to the die pad of the chip and the first pad 223 or the second pad 223 through a wire bonding process, respectively.
- the arrangement of the first solder joints 223 and the second solder joints 224 may facilitate the connection of the leads 300 .
- the arrangement form of the first conductive layer 220 in the present application is not limited thereto.
- the lead 300 may be directly connected to the power line 221 without disposing the second pad 224 .
- different leads 300 can also be electrically connected to the power lines in different ways. Specifically, part of the lead wires 300 may be arranged to be connected to the second pads 224 and then electrically connected to the power supply line 221 , and part of the lead wires 300 may be directly connected to the power supply line 221 .
- the same power line 221 may be configured to be connected to a plurality of second pads 224 .
- the same type of power lines 221 connected to the plurality of second solder joints 224 can be formed into a complete plane on the top of the substrate 210 , thereby further reducing the impedance of the power lines 221 and simplifying the structure of the first conductive layer 220 , so as to facilitate its processing and formation.
- the power cord 221 includes a cord body 2211 and a connecting portion 2212 .
- the connecting portion 2212 connects the wire body 2211 and the second pad 224 .
- the power line 221 by dividing the power line 221 into a line body 2211 and a connecting portion 2212, it is convenient to set the line width of the line body relatively wide, thereby reducing the DC impedance. Meanwhile, the arrangement of the connecting portion 2212 is convenient for arranging the first solder joints 223 and the second solder joints 224 in a row when the same power line 221 is connected to a plurality of the second solder joints 224 , thereby facilitating processing.
- the package substrate 200 further includes a third conductive layer 240 and a first conductive plug 250 .
- the third conductive layer may be, but is not limited to, a metal layer.
- the third conductive layer 240 is located between the first conductive layer 220 and the second conductive layer 230 .
- the third conductive layer 240 includes the first connection line 241 .
- the first connection lines 241 are respectively electrically connected to the signal lines 222 and the first pads 231 through the first conductive plugs 250 , so that the signal lines 222 are electrically connected to the corresponding first pads 231 .
- first connection line 241 one end thereof is electrically connected to the signal line 222 through the first conductive plug 250 between the first conductive layer 220 and the third conductive layer 240;
- the first conductive plug 250 between the layer 230 and the third conductive layer 240 is electrically connected to the first pad 231 .
- the arrangement of the third conductive layer 240 can make the first pads 231 connected to the signal lines 222 freely and flexibly arranged without being affected by the positions of the signal lines 222 .
- first pad 231 and the corresponding signal line 222 are electrically connected through the local interconnection line 232 , more specifically, for the same first connection line 241 , one end thereof passes between the first conductive layer 220 and the third conductive layer 240
- the first conductive plug 250 is electrically connected to the signal line 222; at the same time, the other end thereof is electrically connected to the local interconnection line 232 through the first conductive plug 250 between the second conductive layer 230 and the third conductive layer 240 (please Refer to FIG. 5 at the same time, so as to realize the electrical connection with the first pad 231 .
- each signal line 222 can be directly connected to the corresponding first pad 231 through the first conductive plug 250 .
- the second conductive layer 230 further includes a second pad 233 .
- Second solder balls (not shown) may be formed on the second pads 233 to be electrically connected to external circuits.
- the second solder balls may be, but are not limited to, solder balls, which may be formed in the same process as the first solder balls.
- the second pad 233 is electrically connected to the power line 221 so as to supply power to the power line 221 .
- the second conductive layer 230 includes a wiring layer and a pad layer
- the second pad 233 and the first pad 231 can be located on the pad layer at the same time (that is, the two can be formed in the same layer), and the local interconnect lines 232 on the trace layer.
- the package substrate may further include a second conductive plug 260 , so that the second pad 233 and the power line 221 can be easily electrically connected through the second conductive plug 260 .
- the package substrate includes a third conductive layer 240 located between the first conductive layer 220 and the second conductive layer 230 .
- the third conductive layer 240 includes a second connection line 242 .
- the second connection line 242 is electrically connected to the power line 221 and the second pad 233 through the second conductive plug 260 , respectively.
- one end thereof is electrically connected to the power line 221 through the second conductive plug 260 between the first conductive layer 220 and the third conductive layer 240;
- the second conductive plug 260 between the layer 230 and the third conductive layer 240 is electrically connected to the second pad 233 .
- the other end of the second connection line 242 is electrically connected to the second pad 233 through the second conductive plug 260 between the second conductive layer 230 and the third conductive layer 240, and the second conductive plug 260 may be directly connected to the second pad 233.
- the second pad 233 is connected, or the second conductive plug 260 is connected to the second pad 233 through other conductive structures, which is not limited in the present application.
- the arrangement of the third conductive layer 240 can make the second pads 233 connected to the power lines 221 freely and flexibly arranged without being affected by the position of the power lines 221 .
- the first pads 231 and the second pads 233 may be further arranged in an array at the bottom of the base 210 , so that the space at the bottom of the base 210 can be effectively utilized and the reliability of the packaging substrate can be improved.
- the first pads 231 and the second pads 233 may be arranged in multiple arrays at the bottom of the substrate 210 (four arrays are arranged in FIG. 4 ).
- the local interconnect lines 232 can be arranged in the blank areas between the multiple arrays, so that the arrangement space of the local interconnect lines 232 is larger, so that the local interconnect lines 232 can be laid out on the second conductive layer 230 more freely and flexibly .
- the part of the first conductive plugs 250 that connect the local interconnect lines 232 may also be disposed in the array.
- the blank area between them is convenient for the layout setting of the first conductive plugs 250 .
- the first connection line 241 and the second connection line 242 may be provided on the third conductive layer 240 at the same time.
- the first connection lines 241 are electrically connected to the signal lines 222 and the first pads 231 respectively through the first conductive plugs 250 .
- the second connection lines 242 are respectively electrically connected to the power lines 221 and the second pads 233 through the second conductive plugs 260 , so that the first pads 231 and the second pads 233 are arranged in an array at the bottom of the substrate 210 .
- the same power line 221 is provided to connect a plurality of second conductive plugs 260, so that the connection can be effectively increased Through hole area, form better return flow and reduce DC voltage drop.
- a plurality of second conductive plugs 260 may be provided along the length direction and the width direction of the power line 221, so that better reflow can be formed, and the DC voltage drop can be further reduced.
- the same power line 221 may be connected to the second connection lines 242 of the third conductive layer 240 through a plurality of second conductive plugs 260 .
- the same power line 221 may be connected to the plurality of second pads 233 of the second conductive layer 230 through the plurality of second conductive plugs 260 .
- the first pad on the bottom of the substrate is electrically connected to the signal line on the top of the substrate.
- a plurality of associated signal lines are connected by connecting the associated first pads with local interconnect lines, so that the top of the substrate no longer needs to be provided with a plating bar.
- the present application can effectively widen the line width and increase the cross section of the power line, thereby effectively reducing the DC resistance impedance of the power line, thereby effectively preventing the problem that the DC voltage drop exceeds the standard.
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Geometry (AREA)
- Structure Of Printed Boards (AREA)
- Semiconductor Integrated Circuits (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
Description
Claims (17)
- 一种封装基板,应用于芯片封装,包括:第一导电层,位于基底的顶部,包括电源线以及信号线,所述电源线用于为芯片供电,所述信号线用于为所述芯片提供信号;第二导电层,位于所述基底的底部,包括第一焊盘以及局部互连线,所述第一焊盘与所述信号线对应电连接,多个相关联的所述第一焊盘通过所述局部互连线电连接。
- 根据权利要求1所述的封装基板,其中,所述第一焊盘与对应的所述信号线通过所述局部互连线电连接。
- 根据权利要求2所述的封装基板,其中,所述第二导电层包括走线层与焊盘层,所述局部互连线位于所述走线层,所述第一焊盘位于所述焊盘层,所述焊盘层形成于所述走线层上,所述局部互连线的未被所述第一焊盘覆盖的部分具有弯折角,所述弯折角为钝角。
- 根据权利要求1所述的封装基板,其中,所述第一导电层还包括第一焊点以及第二焊点,所述第一焊点以及所述第二焊点均用于与所述芯片电连接,所述信号线连接所述第一焊点,所述电源线连接所述第二焊点。
- 根据权利要求4所述的封装基板,其中,同一所述电源线连接多个所述第二焊点。
- 根据权利要求5所述的封装基板,其中,所述电源线包括线本体以及连接部,所述连接部连接所述线本体与所述第二焊点。
- 根据权利要求1所述的封装基板,其中,所述封装基板还包括第三导电层以及第一导电插塞,所述第三导电层位于所述第一导电层与所述第二导电层之间,且包括第一连接线,所述第一连接线通过第一导电插塞分别与所述信号线以及所述第一焊盘电连接。
- 根据权利要求1所述的封装基板,其中,所述第二导电层还包括第二焊盘,所述第二焊盘与所述电源线对应电连接。
- 根据权利要求8所述的封装基板,其中,所述封装基板还包括第二导 电插塞,所述第二焊盘与所述电源线通过所述第二导电插塞电连接。
- 根据权利要求9所述的封装基板,其中,所述封装基板还包括第三导电层,所述第三导电层位于所述第一导电层与所述第二导电层之间,且包括第二连接线,所述第二连接线通过第二导电插塞分别与所述电源线以及所述第二焊盘电连接。
- 根据权利要求9所述的封装基板,其中,同一所述电源线连接多个第二导电插塞。
- 根据权利要求11所述的封装基板,其中,沿所述电源线的长度方向以及宽度方向均设置多个第二导电插塞。
- 根据权利要求10所述的封装基板,其中,所述第一焊盘以及所述第二焊盘在所述基底的底部阵列排布。
- 一种封装结构,包括芯片、引线以及权利要求1所述的封装基板,所述引线一端连接所述芯片,且另一端连接所述封装基板。
- 根据权利要求14所述的封装结构,其中,所述芯片的数量为多个,多个所述芯片堆叠设置,所述封装结构还包括胶粘膜层,所述胶粘膜层连接相邻两个所述芯片以及所述封装基板与所述芯片。
- 根据权利要求15所述的封装结构,其中,多个所述芯片交错堆叠,相邻两个所述芯片分别在相对的两侧通过所述引线与所述封装基板电连接。
- 根据权利要求14所述的封装结构,其中,所述封装结构还包括塑封层,所述塑封层覆盖所述芯片。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/439,915 US20230087325A1 (en) | 2021-01-21 | 2021-06-18 | Package substrate and package structure |
JP2022547937A JP2023514986A (ja) | 2021-01-21 | 2021-06-18 | パッケージ基板及びパッケージ構造 |
KR1020227029994A KR20220133992A (ko) | 2021-01-21 | 2021-06-18 | 패키지 기판 및 패키지 구조물 |
EP21895916.1A EP4060729A4 (en) | 2021-01-21 | 2021-06-18 | ENCAPSULATING SUBSTRATE AND ENCAPSULATING STRUCTURE |
Applications Claiming Priority (2)
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CN202110082929.3A CN112885808B (zh) | 2021-01-21 | 2021-01-21 | 封装基板以及封装结构 |
CN202110082929.3 | 2021-01-21 |
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WO2022156133A1 true WO2022156133A1 (zh) | 2022-07-28 |
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PCT/CN2021/100847 WO2022156133A1 (zh) | 2021-01-21 | 2021-06-18 | 封装基板以及封装结构 |
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Country | Link |
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US (1) | US20230087325A1 (zh) |
EP (1) | EP4060729A4 (zh) |
JP (1) | JP2023514986A (zh) |
KR (1) | KR20220133992A (zh) |
CN (1) | CN112885808B (zh) |
WO (1) | WO2022156133A1 (zh) |
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CN112885808B (zh) * | 2021-01-21 | 2022-03-08 | 长鑫存储技术有限公司 | 封装基板以及封装结构 |
CN113782498B (zh) * | 2021-07-27 | 2024-05-17 | 华为数字能源技术有限公司 | 电源模块及功率器件 |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101419956A (zh) * | 2007-10-23 | 2009-04-29 | 松下电器产业株式会社 | 半导体装置 |
CN104851862A (zh) * | 2014-02-19 | 2015-08-19 | 瑞萨电子株式会社 | 电子设备 |
CN110112116A (zh) * | 2018-02-01 | 2019-08-09 | 爱思开海力士有限公司 | 半导体封装件和形成半导体封装件的方法 |
CN110767636A (zh) * | 2018-07-25 | 2020-02-07 | 三星电子株式会社 | 半导体封装 |
CN110970413A (zh) * | 2018-09-28 | 2020-04-07 | 三星电子株式会社 | 半导体封装件 |
US20200176406A1 (en) * | 2018-12-03 | 2020-06-04 | SK Hynix Inc. | Semiconductor packages |
CN112885808A (zh) * | 2021-01-21 | 2021-06-01 | 长鑫存储技术有限公司 | 封装基板以及封装结构 |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8031484B2 (en) * | 2006-06-16 | 2011-10-04 | Hong Kong Applied Science And Technology Research Institute Co., Ltd. | IC packages with internal heat dissipation structures |
US8018037B2 (en) * | 2009-04-16 | 2011-09-13 | Mediatek Inc. | Semiconductor chip package |
JP2010278318A (ja) * | 2009-05-29 | 2010-12-09 | Renesas Electronics Corp | 半導体装置 |
KR101686553B1 (ko) * | 2010-07-12 | 2016-12-14 | 삼성전자 주식회사 | 반도체 패키지 및 패키지 온 패키지 |
CN207166845U (zh) * | 2017-07-06 | 2018-03-30 | 新华三技术有限公司 | 一种电路板及电路板组件 |
CN110313881B (zh) * | 2018-03-30 | 2021-10-26 | 上海微创医疗机器人(集团)股份有限公司 | 焊盘转接结构及电子内窥镜头端结构 |
CN111739807B (zh) * | 2020-08-06 | 2020-11-24 | 上海肇观电子科技有限公司 | 布线设计方法、布线结构以及倒装芯片 |
CN112242375A (zh) * | 2020-10-19 | 2021-01-19 | Oppo广东移动通信有限公司 | 芯片和电子设备 |
-
2021
- 2021-01-21 CN CN202110082929.3A patent/CN112885808B/zh active Active
- 2021-06-18 US US17/439,915 patent/US20230087325A1/en not_active Abandoned
- 2021-06-18 WO PCT/CN2021/100847 patent/WO2022156133A1/zh unknown
- 2021-06-18 JP JP2022547937A patent/JP2023514986A/ja active Pending
- 2021-06-18 EP EP21895916.1A patent/EP4060729A4/en not_active Withdrawn
- 2021-06-18 KR KR1020227029994A patent/KR20220133992A/ko not_active Application Discontinuation
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101419956A (zh) * | 2007-10-23 | 2009-04-29 | 松下电器产业株式会社 | 半导体装置 |
CN104851862A (zh) * | 2014-02-19 | 2015-08-19 | 瑞萨电子株式会社 | 电子设备 |
CN110112116A (zh) * | 2018-02-01 | 2019-08-09 | 爱思开海力士有限公司 | 半导体封装件和形成半导体封装件的方法 |
CN110767636A (zh) * | 2018-07-25 | 2020-02-07 | 三星电子株式会社 | 半导体封装 |
CN110970413A (zh) * | 2018-09-28 | 2020-04-07 | 三星电子株式会社 | 半导体封装件 |
US20200176406A1 (en) * | 2018-12-03 | 2020-06-04 | SK Hynix Inc. | Semiconductor packages |
CN112885808A (zh) * | 2021-01-21 | 2021-06-01 | 长鑫存储技术有限公司 | 封装基板以及封装结构 |
Non-Patent Citations (1)
Title |
---|
See also references of EP4060729A4 * |
Also Published As
Publication number | Publication date |
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US20230087325A1 (en) | 2023-03-23 |
EP4060729A4 (en) | 2023-07-12 |
KR20220133992A (ko) | 2022-10-05 |
CN112885808A (zh) | 2021-06-01 |
CN112885808B (zh) | 2022-03-08 |
JP2023514986A (ja) | 2023-04-12 |
EP4060729A1 (en) | 2022-09-21 |
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