WO2022151115A1 - 一种led发光装置及其制造方法 - Google Patents

一种led发光装置及其制造方法 Download PDF

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Publication number
WO2022151115A1
WO2022151115A1 PCT/CN2021/071627 CN2021071627W WO2022151115A1 WO 2022151115 A1 WO2022151115 A1 WO 2022151115A1 CN 2021071627 W CN2021071627 W CN 2021071627W WO 2022151115 A1 WO2022151115 A1 WO 2022151115A1
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WIPO (PCT)
Prior art keywords
light
substrate
transmitting unit
led
adhesive layer
Prior art date
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PCT/CN2021/071627
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English (en)
French (fr)
Inventor
林秋霞
李达诚
黄森鹏
余长治
徐宸科
Original Assignee
泉州三安半导体科技有限公司
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Application filed by 泉州三安半导体科技有限公司 filed Critical 泉州三安半导体科技有限公司
Priority to PCT/CN2021/071627 priority Critical patent/WO2022151115A1/zh
Priority to JP2022547133A priority patent/JP7480313B2/ja
Priority to CN202180002108.2A priority patent/CN113557609B/zh
Publication of WO2022151115A1 publication Critical patent/WO2022151115A1/zh
Priority to US18/109,128 priority patent/US20230207754A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H01L33/486—Containers adapted for surface mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Definitions

  • the present invention relates to the field of semiconductor devices, in particular, to an LED light-emitting device and a manufacturing method thereof.
  • LED chips have developed rapidly because of their excellent performance. Among them, the huge application value of ultraviolet LEDs, especially deep ultraviolet LEDs, especially in the application of sterilization and disinfection, has attracted great attention and has become a new research hotspot.
  • the packaging form of substrate and quartz glass is usually adopted.
  • the silica glass is attached to the substrate by an adhesive, and this packaging form faces many problems.
  • the adhesiveness of the adhesive is usually poor, and the air tightness of the product cannot be guaranteed;
  • the amount of binder is too large, or the binder enters the functional area of the product, which affects the LED
  • the quartz glass material itself is relatively hard and brittle, it is easy to cause glass chipping and damage during production operations, and it will also reduce the air tightness and reliability of the product.
  • the object of the present invention is to provide an LED light-emitting device and a method for manufacturing the same.
  • the side wall of the device is flush as a whole, which is conducive to the better positioning of the product in the braided vibration plate, and better improvement of the packaging yield.
  • an LED light-emitting device comprising:
  • the substrate has a first surface and a second surface arranged oppositely, and a functional area is formed on the first surface of the substrate;
  • the LED chip is fixed on the functional area on the first surface of the substrate;
  • the light-transmitting unit is disposed above the first surface of the substrate and covers the LED chip;
  • an adhesive material layer connecting the substrate and the light-transmitting unit, and the adhesive material layer is located above the substrate outside the functional area;
  • the side wall of the LED light-emitting device is flush as a whole.
  • the substrate is a plane substrate
  • a metal plating layer higher than the first surface is disposed on the first surface of the substrate
  • the metal plating layer is formed on the functional area and the substrate outside the functional area and the metal plating layer forms metal strips surrounding the functional area on the substrate outside the functional area, and the metal strips are spaced apart from the functional area.
  • the substrate is a bracket with a cup
  • the functional area is formed inside the cup
  • the LED chip is located in the cup.
  • the thickness of the adhesive material layer ranges from 35 ⁇ m to 150 ⁇ m.
  • the layer of bonding material includes a first portion overlying the metal strip outside the functional area, and a second portion over at least a portion of the substrate outside the metal strip.
  • the thickness of the first part of the adhesive material layer is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second part is between 50 ⁇ m and 150 ⁇ m.
  • the light-transmitting unit is a flat plate structure
  • the flat-plate structure includes a mounting seat located at the periphery and a light-transmitting area located in the middle part, and the light-transmitting unit is connected to the side wall of the bracket through the mounting seat .
  • the light-transmitting unit is a lens structure
  • the lens structure includes a convex lens and a mounting seat formed around the convex lens, wherein,
  • a cavity is formed between the mounting seat and the convex lens, and the light-transmitting unit is connected to the substrate through the mounting seat;
  • the LED chip is located in the cavity.
  • the convex lens is a hemispherical convex lens, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.
  • the convex lens is a semi-ellipsoid convex lens in the long axis direction, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.
  • the vertical distance between the highest point and the lowest surface of the lens structure is between 3.00-3.50mm
  • the height of the mounting seat of the lens structure is between 0.3-0.7mm
  • the maximum width of the convex lens is between 3.00 ⁇ 3.50mm.
  • the light-transmitting unit is quartz glass.
  • the offset distance between the center of the light-transmitting unit and the center of the LED chip is less than 100 ⁇ m.
  • the light-transmitting unit and the substrate have the same width, and the sidewall of the light-transmitting unit is flush with the sidewall of the substrate.
  • the adhesive material layer includes a first adhesive layer on the substrate and a second adhesive layer on the sidewall of the light-transmitting unit, and the sidewall of the adhesive material layer is The side walls of the base plate are flush.
  • the adhesive material layer includes a first adhesive layer on the substrate, a second adhesive layer on the sidewall of the light-transmitting unit, and at least part of the sidewall of the substrate
  • the third adhesive layer on the adhesive material layer is flush with the sidewall of the substrate.
  • the present invention also provides a manufacturing method of the LED light-emitting device, comprising the following steps:
  • the substrate has a first surface and a second surface arranged oppositely, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;
  • Cutting is performed to align the cutting area of the substrate until the substrate is cut through, so as to form the light emitting device.
  • the substrate is a flat substrate or a bracket with a cup, wherein,
  • a metal plating layer higher than the first surface is disposed on the first surface of the substrate, and the metal plating layer forms the functional area and a part of the substrate outside the functional area.
  • a metal strip the metal strip surrounds the functional area and is spaced apart from the functional area, and a groove is formed between the adjacent metal strips;
  • the substrate is a bracket with a cup
  • the functional area is formed inside the cup, and the LED chip is located in the cup.
  • covering the light-transmitting plate on the substrate further includes the following steps:
  • quartz glass including a plurality of light-transmitting units, each light-transmitting unit including a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;
  • each light-transmitting unit of the quartz glass correspond to the LED chips one-to-one.
  • the light-transmitting unit when the substrate is a flat substrate, the light-transmitting unit is formed as a lens structure, wherein the light-transmitting area is a convex lens; when the substrate is a bracket with a cup, the light-transmitting unit is formed It is a lens structure or a flat plate structure, and when the light-transmitting unit is a lens structure, the light-transmitting area is a convex lens.
  • the thickness of the adhesive material layer is between 35 ⁇ m and 150 ⁇ m.
  • the adhesive material layer when the substrate is a planar substrate, includes a first portion formed on the metal strip and a second portion formed in the groove, the thickness of the first portion being The thickness of the second portion is between 50 ⁇ m and 150 ⁇ m.
  • a second adhesive layer of the adhesive material layer is formed in the first trench.
  • a first cut is performed to cut the light-transmitting plate and at least part of the substrate to form a first groove above the cut area, and to form a second groove in the substrate, the second groove a groove communicates with the first groove;
  • a second adhesive layer of the adhesive material layer is formed in the first trench.
  • Another embodiment of the present invention also provides an LED lighting device, comprising:
  • the substrate has a first surface and a second surface arranged oppositely, and a functional area is formed on the first surface of the substrate;
  • the LED chip is fixed on the functional area on the first surface of the substrate;
  • the light-transmitting unit is disposed above the first surface of the substrate and covers the LED chip;
  • an adhesive material layer connecting the substrate and the light-transmitting unit comprising: a first adhesive layer located on the first surface of the substrate and above the substrate outside the functional area, and a second adhesive layer located on the sidewall of the light-transmitting unit, the adhesive material layer forms a continuous structure in the LED lighting device.
  • the adhesive material layer further includes a third adhesive layer formed on at least part of the sidewall of the substrate.
  • the substrate is a plane substrate
  • a metal plating layer higher than the first surface is provided on the first surface of the substrate
  • the metal plating layer is formed on the functional area and the outer side of the functional area.
  • the metal plating layer forms metal strips surrounding the functional area on the substrate outside the functional area, and the metal strips are spaced apart from the functional area.
  • the substrate is a bracket with a cup
  • the functional area is formed inside the cup
  • the LED chip is located in the cup.
  • a step is formed on the substrate in a peripheral region outside the functional area, and the third adhesive layer is formed on the surface and sidewall of the step.
  • the thickness of the first adhesive layer ranges from 35 ⁇ m to 150 ⁇ m.
  • the thickness of the second adhesive layer ranges from 200 ⁇ m to 400 ⁇ m.
  • the first adhesive layer includes a first portion over the metal strip outside the functional area, and a second portion on the substrate outside the metal strip.
  • the thickness of the first portion of the first adhesive layer is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second portion is between 50 ⁇ m and 150 ⁇ m.
  • the thickness of the third adhesive layer is greater than or equal to 1/3 of the thickness of the substrate, and less than or equal to the thickness of the substrate.
  • the thickness of the third adhesive layer is greater than or equal to 1/2 of the thickness of the side wall of the bracket , less than or equal to the thickness of the side wall of the bracket.
  • the light-transmitting unit is a flat plate structure
  • the flat-plate structure includes a mounting seat at the periphery and a light-transmitting area in the middle part, the light-transmitting unit is connected to the side wall of the bracket through the mounting seat .
  • a step is formed on the side wall of the cup holder near the functional area, the first adhesive layer is formed on the surface of the step, and the second adhesive layer is formed on the surface of the step.
  • the thickness of the second adhesive layer is greater than 1/2 of the thickness of the light-transmitting unit, and less than or equal to the thickness of the light-transmitting unit.
  • the light-transmitting unit is a lens structure
  • the lens structure includes a convex lens and a mounting seat formed around the convex lens, wherein,
  • a cavity is formed between the mounting seat and the convex lens, and the quartz glass plate is connected to the substrate through the mounting seat;
  • the LED chip is located in the cavity.
  • the convex lens is a hemispherical convex lens, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.
  • the convex lens is a semi-ellipsoid convex lens in the long axis direction, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.
  • the vertical distance between the highest point and the lowest surface of the lens structure is between 3.00-3.50mm
  • the height of the mounting seat of the lens structure is between 0.3-0.7mm
  • the maximum width of the convex lens is between 3.00 ⁇ 3.50mm.
  • the light-transmitting unit is quartz glass.
  • the adhesive material layer further includes a fourth adhesive layer, and the fourth adhesive layer covers a part of the upper surface of the light-transmitting unit.
  • Yet another embodiment of the present invention provides a method for manufacturing an LED light-emitting device, comprising the following steps:
  • the substrate has a first surface and a second surface arranged oppositely, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;
  • the second cutting is performed, and the light-transmitting plate and the substrate are cut along the cutting area where the second adhesive layer is aligned with the substrate, until the substrate is cut through, so as to form the light-emitting device.
  • the depth of the groove is greater than or equal to 35 ⁇ m.
  • the substrate is a flat substrate or a bracket with a cup, wherein,
  • a metal plating layer higher than the first surface is disposed on the first surface of the substrate, and the metal plating layer forms the functional area and a part of the substrate outside the functional area.
  • a metal strip the metal strip surrounds the functional area and is spaced apart from the functional area, and a groove is formed between the adjacent metal strips;
  • the substrate is a bracket with a cup
  • the functional area is formed inside the cup, and the LED chip is located in the cup.
  • covering the light-transmitting plate on the substrate further includes the following steps:
  • quartz glass including a plurality of light-transmitting units, each light-transmitting unit including a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;
  • the quartz glass is attached to the substrate, the mounting seat of each light-transmitting unit is connected to the substrate through the first adhesive layer, and the light-transmitting area of each light-transmitting unit of the quartz glass is connected to the substrate.
  • the LED chips are in one-to-one correspondence.
  • covering the light-transmitting plate on the substrate further includes the following steps:
  • each light-transmitting unit includes a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;
  • a plurality of light-transmitting units are attached to the substrate, the mounting seat of each light-transmitting unit is connected to the substrate through the first adhesive layer, and the light-transmitting area of each light-transmitting unit is one with the LED chip.
  • the mounting seats of the adjacent light-transmitting units form the first grooves.
  • the light-transmitting unit when the substrate is a flat substrate, the light-transmitting unit is formed as a lens structure, wherein the light-transmitting area is a convex lens; when the substrate is a bracket with a cup, the light-transmitting unit is formed It is a lens structure or a flat plate structure, and when the light-transmitting unit is a lens structure, the light-transmitting area is a convex lens.
  • the first adhesive layer when the substrate is a planar substrate, includes a first portion formed on the metal strip and a second portion formed in the groove, the first portion of which is The thickness is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second part is between 50 ⁇ m and 150 ⁇ m.
  • forming the first groove above the cutting area includes: performing a first cut, cutting the quartz glass to cut through the adjacent light-transmitting cells to space the adjacent light-transmitting cells to form the first groove.
  • the first cutting further includes: after spacing the adjacent light-transmitting units, continuing to cut at least part of the substrate to form a second groove in the substrate.
  • the method further includes performing a first cutting, cutting at least part of the substrate to form a second trench in the substrate.
  • the manufacturing method further includes forming a third adhesive layer in the second trench.
  • the cutting width of the second cutting is smaller than the cutting width of the first cutting.
  • the thickness of the third adhesive layer is greater than or equal to 1/3 of the thickness of the substrate, and less than or equal to the thickness of the substrate.
  • the thickness of the third adhesive layer is greater than or equal to 1/2 of the thickness at the side wall of the bracket, less than or equal to the thickness at the side wall of the bracket.
  • the base plate when the base plate is a bracket with a cup, it also includes:
  • a step is formed on one side of the side wall of the bracket close to the functional area
  • the second adhesive layer is formed on the sidewall of the step and the upper surface of at least part of the sidewall.
  • a fourth adhesive layer is formed on a part of the upper surface of the light-transmitting unit, and the fourth adhesive layer and the second adhesive layer form a continuous structure.
  • An embodiment of the present invention also provides an LED lighting device, including:
  • the substrate has a first surface and a second surface disposed opposite to each other, a functional area and a strip structure are formed on the first surface of the substrate, and the strip structure is located at the periphery of the functional area and surrounds the a functional area and is spaced apart from the functional area, the strip structure is higher than the first surface of the substrate;
  • the LED chip is fixed on the functional area on the first surface of the substrate;
  • the light-transmitting unit is disposed above the first surface of the substrate and covers the LED chip;
  • An adhesive material layer connects the substrate and the light-transmitting unit, and the adhesive material layer is located above the strip structure.
  • the substrate is a flat substrate
  • a metal plating layer higher than the first surface is provided on the first surface of the substrate, and the metal plating layer forms the functional area and the strip structure.
  • the thickness of the adhesive material layer ranges from 35 ⁇ m to 150 ⁇ m.
  • the adhesive material layer is further formed on at least part of the substrate outside the metal strip, the adhesive material layer above the strip structure is the first part, and at least part of the outer side of the metal strip is the first part
  • the layer of adhesive material on the substrate is the second part.
  • the thickness of the first part of the adhesive material layer is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second part is between 50 ⁇ m and 150 ⁇ m.
  • the light-transmitting unit is a lens structure
  • the lens structure includes a convex lens and a mounting seat formed around the convex lens, wherein,
  • a cavity is formed between the mounting seat and the convex lens, and the quartz glass plate is connected to the substrate through the mounting seat;
  • the LED chip is located in the cavity.
  • the thickness of the LED chip ranges from 200 ⁇ m to 750 ⁇ m.
  • the depth of the cavity of the light-transmitting unit ranges from 100 ⁇ m to 900 ⁇ m, and the distance between the inner wall of the inner cavity and the top of the LED chip is based on 10 ⁇ m to 100 ⁇ m.
  • the height of the strip structure ranges from 35 ⁇ m to 100 ⁇ m.
  • the convex lens is a hemispherical convex lens, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.
  • the convex lens is a semi-ellipsoid convex lens in the long axis direction, and the spherical center of the convex lens is located between the upper surface of the LED chip and the inner surface of the convex lens.
  • the vertical distance between the highest point and the lowest surface of the lens structure is between 3.00-3.50mm
  • the height of the mounting seat of the lens structure is between 0.3-0.7mm
  • the maximum width of the convex lens is between 3.00 ⁇ 3.50mm.
  • the light-transmitting unit is quartz glass.
  • Another embodiment of the present invention also provides a manufacturing method of an LED light-emitting device, comprising the following steps:
  • a substrate is provided, the substrate has a first surface and a second surface disposed opposite to each other, a functional area and a strip structure are formed on the first surface, and the strip structure is located at the periphery of the functional area to surround the function area, and the functional area is spaced apart from each other, and a cutting area is formed between adjacent strip structures;
  • Cutting is performed to align the cutting area of the substrate until the substrate is cut through, so as to form the light emitting device.
  • the substrate is a plane substrate, and a metal plating layer higher than the first surface is provided on the first surface of the substrate, and the metal plating layer forms the functional area and the strip structure, adjacent to each other.
  • a groove is formed between the strip structures.
  • covering the light-transmitting plate on the substrate further includes the following steps:
  • quartz glass including a plurality of light-transmitting units, each light-transmitting unit including a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;
  • each light-transmitting unit is connected to the substrate through the adhesive material, and the light-transmitting area of each light-transmitting unit of the quartz glass corresponds to the LED chip one-to-one.
  • covering the light-transmitting plate on the substrate further includes the following steps:
  • each light-transmitting unit includes a mounting seat located around the light-transmitting unit and a light-transmitting area located in the middle of the mounting seat;
  • each light-transmitting unit attaching a plurality of light transmissive units to the substrate such that a portion of the adhesive material is formed over the strip structure to form a first portion of the adhesive material layer, leaving the bond in the groove
  • the material layer forms the second part
  • the mounting seat of each light-transmitting unit is connected to the substrate through the adhesive material, and the light-transmitting areas of each light-transmitting unit correspond to the LED chips one-to-one.
  • the light-transmitting unit is formed as a lens structure, wherein the light-transmitting area is a convex lens, a cavity is formed between the mounting seat and the convex lens, and the quartz glass plate is connected to the the substrate, and the LED chip is located in the cavity.
  • the thickness of the adhesive material layer is between 35 ⁇ m and 150 ⁇ m.
  • the thickness of the first portion is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second portion is between 50 ⁇ m and 150 ⁇ m.
  • the depth of the cavity of the light-transmitting unit ranges from 100 ⁇ m to 900 ⁇ m, and the distance between the inner wall of the inner cavity and the top of the LED chip is based on 10 ⁇ m to 100 ⁇ m.
  • the height of the strip structure ranges from 35 ⁇ m to 100 ⁇ m.
  • the LED light-emitting device and the manufacturing method thereof provided by the present invention have at least the following beneficial technical effects:
  • the LED light-emitting device of the present invention comprises: a substrate, an LED chip arranged in a functional area of the substrate, a light-transmitting unit overlying the substrate and covering the LED chip, and an adhesive material layer connecting the substrate and the light-transmitting unit.
  • the sidewall of the LED light-emitting device of the present invention is flush as a whole, which is conducive to better positioning of the product in the tape vibration plate and better packaging yield.
  • the first part of the adhesive layer is uniformly and completely filled between the metal strip and the lens unit, without air bubbles or gaps, which can significantly increase the air tightness of the device.
  • the second part formed on at least part of the substrate outside the metal strip can further block water vapor from entering the device, especially when the second part fills the gap between the substrate outside the metal strip and the light-transmitting unit, it can Further improve the air tightness of the device.
  • the adhesive material layer between the substrate and the light-transmitting unit includes: a first surface on the first surface of the substrate and above the substrate outside the functional area.
  • An adhesive layer, and a second adhesive layer located on the sidewall of the light-transmitting unit, the adhesive material layer forms a continuous structure in the LED lighting device.
  • the above-mentioned adhesive material forms a structure similar to "L" as a whole, and the adhesive material of this structure can fully bond the substrate and the light-transmitting unit, enhance the bonding force between the two, and improve the reliability of the product.
  • the adhesive material layer fully fills the gap between the substrate and the light-transmitting unit, and is also formed on the sidewall of the light-transmitting unit, which effectively improves the sealing between the substrate and the light-transmitting unit, and improves the air tightness of the product. and reliability.
  • the above-mentioned adhesive material layer in the light-emitting device of the present invention may further include a third adhesive layer formed on at least part of the sidewall of the substrate, for example, a step is formed on the sidewall of the substrate, and the third adhesive layer is formed on the surface and side walls of the step.
  • the layer of adhesive material including this third adhesive layer forms a continuous structure like a "T” or a "Z".
  • the structure forms a cladding structure between and around the substrate and the light-transmitting unit, which can further improve the air tightness and reliability of the product.
  • the above-mentioned adhesive material layer may also include a fourth adhesive layer formed on a part of the upper surface of the light-transmitting unit.
  • the fourth adhesive layer is formed on at least part of the upper surface of the mounting seat of the light-transmitting unit. , thereby further increasing the bonding area of the bonding material, increasing the bonding force between the light-transmitting unit and the substrate, and further enhancing the air tightness and reliability of the product.
  • the above-mentioned adhesive material layer preferably has one or more of the following characteristics: good adhesion, certain fluidity, and a certain reflection effect on the light emitted by the LED chip, for example, silica gel, white glue, fluororesin, etc. can be selected, In this way, the airtightness of the product can be improved, and the light extraction effect of the product can also be improved.
  • the manufacturing method of the light-emitting device of the present invention can adopt the method of covering a whole piece of quartz glass plate including a plurality of light-transmitting units on the whole substrate, or use a plurality of independent light-transmitting units formed of quartz glass to be attached to the whole piece way on the substrate.
  • the entire quartz glass plate or the independent light-transmitting unit and the substrate are positioned through the corresponding positioning components on each fixture to ensure that the light-transmitting area of the light-transmitting unit coincides with the center of the LED chip on the substrate.
  • This process It can effectively improve the offset of the quartz glass plate or the light-transmitting unit, and avoid the offset of the central light-emitting angle of the LED chip; the mounting seat of the light-transmitting unit is aligned with the area outside the functional area coated with the first adhesive layer on the substrate, In a vacuum lamination device, the quartz glass and the first adhesive layer on the substrate are contacted and pressed to achieve close contact between the two. Further, a first groove can be formed between the light-transmitting units, and the first groove can be filled with adhesive material to fill the first groove to form a second adhesive layer. The adhesive layer is cut to obtain a light-emitting device, thereby forming a light-emitting device including an adhesive material layer similar to an "L"-shaped structure.
  • the method can ensure the airtightness and reliability of the light-emitting device, and the entire process can effectively improve the deflection of the quartz glass.
  • the above-mentioned manufacturing method while forming the above-mentioned first groove, part of the substrate is cut along the first groove, a second groove is formed on the first substrate, and the above-mentioned third adhesive layer is formed in the second groove.
  • the above-mentioned "T"-like adhesive material layer is formed, which further improves the airtightness and reliability of the device.
  • the above-mentioned substrate can be a flat substrate or a bracket substrate with a cup
  • the light-transmitting unit can be a lens structure or a flat plate structure.
  • the method for manufacturing the light-emitting device of the present invention is varied in manner, has strong applicability, can manufacture light-emitting devices in various forms, and at the same time can ensure good air tightness and reliability of the device.
  • FIG. 1a is a schematic diagram of an LED light-emitting device according to Embodiment 1 of the present invention.
  • FIG. 1b is a flow chart of a manufacturing method of the LED lighting device shown in FIG. 1 .
  • FIG. 1c shows a schematic structural diagram of the substrate provided in the method shown in FIG. 1b.
  • FIG. 1d is a schematic top view of the substrate shown in FIG. 1c.
  • Fig. 1e is a schematic diagram showing the structure of coating the adhesive material on the substrate shown in Fig. d.
  • FIG. 1f is a schematic structural diagram of placing the substrate shown in FIG. 1e in a first fixture.
  • FIG. 1g shows a schematic diagram of placing the quartz glass in the second jig.
  • FIG. 1h shows a schematic diagram of placing the second jig on the first jig.
  • Figure 1i shows a schematic diagram of the bonding of quartz glass to a substrate.
  • Figure 1j shows a schematic diagram of the structure of the bonding material formed on the metal strip.
  • Figure 1k shows a schematic diagram of the structure after the substrate is covered with quartz glass.
  • FIG. 2 a shows a schematic diagram of the LED light-emitting device provided in the second embodiment of the present invention.
  • FIG. 2b is a schematic diagram of an LED lighting device provided by an alternative embodiment of Embodiment 2 of the present invention.
  • FIG. 2c is a schematic diagram of an LED lighting device provided by an alternative embodiment of Embodiment 2 of the present invention.
  • FIG. 3 is a schematic diagram showing the light-emitting angle of the LED lighting device shown in FIG. 2 a and FIG. 2 b .
  • FIG. 4a shows a schematic diagram of an LED lighting device provided for alternative embodiments of the first and second embodiments.
  • FIG. 4b is a schematic diagram showing the light-emitting angle of the LED light-emitting device shown in FIG. 4a.
  • FIG. 5 is a schematic flowchart of a manufacturing method of an LED light-emitting device according to Embodiment 2 of the present invention.
  • FIG. 6a is a schematic view of the structure after providing the substrate and fixing the LED chips on the substrate as described in FIG. 5 .
  • FIG. 6b and FIG. 6c are schematic diagrams showing different arrangements of LED chips on the substrate.
  • FIG. 7a is a schematic diagram showing the structure of forming a first adhesive layer on the substrate shown in FIG. 6a.
  • FIG. 7b shows a schematic structural diagram of forming a first adhesive layer on the substrate shown in FIG. 6a in another alternative embodiment.
  • FIG. 8a is a schematic diagram showing the structure of placing the substrate shown in FIG. 7a in the first jig.
  • Figure 8b shows a schematic diagram of placing the quartz glass in the second fixture.
  • FIG. 8c shows a schematic diagram of placing the second jig on the first jig.
  • FIG. 8d shows a schematic diagram of attaching quartz glass to a substrate.
  • Figure 8e shows a schematic diagram of the structure after the substrate is covered with quartz glass.
  • FIG. 9 is a schematic diagram showing the structure of forming a first trench between adjacent light-transmitting units of the quartz glass shown in FIG. 8e.
  • FIG. 10 is a schematic diagram showing the structure of forming the second adhesive layer in the first trench shown in FIG. 9 .
  • FIG. 11a is a schematic diagram showing the structure of forming the first trench in another alternative embodiment of the second embodiment.
  • FIG. 11b is a schematic structural diagram of a first fixture for fixing the substrate shown in FIG. 11a.
  • FIG. 11c is a schematic structural diagram of a second fixture for fixing the plurality of light-transmitting units shown in FIG. 11a.
  • FIG. 12a is a schematic structural diagram of an LED light-emitting device provided in Embodiment 3 of the present invention.
  • FIG. 12b is a schematic structural diagram of an LED lighting device in an alternative embodiment of the third embodiment.
  • FIG. 12c is a schematic structural diagram of an LED lighting device in another alternative embodiment of the third embodiment.
  • FIG. 13 is a schematic diagram showing the structure of forming the second trench in the manufacturing method of the LED light-emitting device provided in the third embodiment.
  • FIG. 14 is a schematic diagram showing the structure of forming the second and third adhesive layers in the structure shown in FIG. 13 .
  • FIG. 15 is a schematic structural diagram of forming a second trench in another alternative embodiment of the third embodiment.
  • FIG. 16a is a schematic diagram showing the structure of the LED light-emitting device according to the fourth embodiment of the present invention.
  • FIG. 16b is a schematic structural diagram of an LED light-emitting device according to Embodiment 5 of the present invention.
  • FIG. 17a is a schematic structural diagram of an LED light-emitting device provided by Embodiment 6 of the present invention.
  • FIG. 17b is a schematic structural diagram of an LED light-emitting device provided by Embodiment 7 of the present invention.
  • FIG. 18a is a schematic structural diagram of an LED light-emitting device according to Embodiment 8 of the present invention.
  • FIG. 18b is a schematic structural diagram of an LED light-emitting device provided by an alternative embodiment of Embodiment 8 of the present invention.
  • FIG. 19 is a schematic diagram showing the structure of the substrate provided in the manufacturing method of the LED light-emitting device according to the eighth embodiment and the structure of fixing the LED chip on the substrate.
  • FIG. 20 is a schematic diagram showing the structure of forming the first adhesive layer on the substrate shown in FIG. 19 .
  • FIG. 21 is a schematic diagram showing the structure of covering the substrate shown in FIG. 20 with quartz glass.
  • FIG. 22 is a schematic diagram showing a structure of forming a first trench in the structure shown in FIG. 21 .
  • FIG. 23 is a schematic diagram showing the structure of forming the second adhesive layer in the structure shown in FIG. 22 .
  • FIG. 24 is a schematic diagram showing the structure of forming the first trench in an alternative embodiment of the eighth embodiment.
  • FIG. 25a is a schematic structural diagram of an LED light-emitting device according to Embodiment 9 of the present invention.
  • FIG. 25b shows a schematic structural diagram of an LED lighting device provided for an alternative embodiment of the ninth embodiment.
  • FIG. 26 is a schematic diagram showing the structure of forming the second trench in the manufacturing method of the LED light-emitting device of the ninth embodiment.
  • FIG. 27 is a schematic diagram showing the structure of forming the second and third adhesive layers in the structure shown in FIG. 26 .
  • FIG. 28 is a schematic diagram showing the structure of forming the second trench in an alternative embodiment of the ninth embodiment.
  • FIG. 29 is a comparison diagram of He gas leakage of the LED light-emitting devices shown in FIG. 1 , FIG. 2 b and FIG. 12 a .
  • FIG. 30 is a schematic structural diagram of an LED light-emitting device according to Embodiment 10 of the present invention.
  • FIG. 31 is a schematic structural diagram of an LED light-emitting device according to Embodiment 11 of the present invention.
  • FIG. 32 is a schematic structural diagram of an LED light-emitting device according to Embodiment 12 of the present invention.
  • FIG. 33 is a schematic diagram showing the structure of the LED light-emitting device provided in the thirteenth embodiment of the present invention.
  • the LED lighting device 100-1 of this embodiment includes a substrate 101, an LED chip 103 disposed on the substrate, and a light-transmitting unit covering the LED chip and connected to the substrate. 102 , connecting the substrate 101 and the adhesive material layer 1051 of the light-transmitting unit 102 .
  • the substrate 101 may be any suitable substrate such as a ceramic substrate, a printed circuit board, or the like. This embodiment is described by taking a flat ceramic substrate as an example.
  • the substrate 101 includes a first surface and a second surface disposed opposite to each other. As shown in FIG. 1 a , the first surface of the substrate 101 is provided with a functional area 1011 , and the second surface is provided with an electrode pad 1013 that communicates with the functional area 1011 .
  • the functional area 1011 is formed as a die bonding area for fixing the LED chips, and the LED chips 103 are disposed in the functional area 1011, for example, they can be connected to the functional area by gold wires or directly welded to the functional area.
  • the above-mentioned functional area is formed by a metal plating layer formed on the first surface of the substrate 101, and the metal plating layer forms a positive and negative electrode area in the functional area respectively connected to the electrodes of the LED chip, and the electrode pads 1013 will be arranged on The electrodes of the LED chips in the functional area are drawn out.
  • the light-transmitting unit 102 includes a mounting seat 1021 and a light-transmitting area 1022 , a cavity 104 is formed between the mounting seat and the light-transmitting area, and the LED chip 103 is located in the cavity 104 .
  • the light-transmitting unit is connected to the substrate 101 through an adhesive material layer 1051 over the substrate outside the functional area.
  • the outer area of the above non-functional area is defined as the non-functional area 1012, and this definition is only used to explain the present invention and should not be construed as a limitation of the present invention.
  • the LED chip 103 can be any type of LED chip.
  • it can be an ultraviolet or deep ultraviolet LED chip with a wavelength of less than 400 nm, especially a wavelength between 220 nm and 385 nm. In this embodiment, the wavelength is between 220 nm and 385 nm.
  • the thickness of the ultraviolet LED chip ranges from 200 ⁇ m to 750 ⁇ m, preferably, about 250 to 500 ⁇ m, for example, it can be 450 ⁇ m.
  • the LED chip 103 may include a substrate, a semiconductor layer formed on the surface of the substrate, the semiconductor layer including a first semiconductor layer, an active layer and an active layer that may be sequentially formed on the surface of the substrate.
  • the second semiconductor layer, the LED chip 103 further includes electrode structures connected to the first and second semiconductor layers, respectively, the electrode structure of the LED chip 103 is connected to the functional area 1011 of the substrate, for example, it can be connected by welding, eutectic, etc. Thereby, fixing of the LED chip 103 is realized.
  • the electrode structure of the LED chip is drawn out through the electrode pad 1013 on the backside of the substrate.
  • the above substrate can be a sapphire substrate
  • the first semiconductor layer can be an N-type A1GaN layer
  • an AlN buffer layer and an A1N/A1GaN superstructure can also be formed between the N-type A1GaN layer and the sapphire substrate.
  • the lattice layer is used to reduce the lattice mismatch rate between the N-type AlGaN layer and the sapphire substrate.
  • the active layer is an AlGaN multi-quantum well layer, and the AlGaN multi-quantum well layer is disposed on the side of the N-type AlGaN layer away from the substrate; the second semiconductor layer is a P-type AlGaN layer, and the P-type The AlGaN layer is disposed on the side of the AlGaN quantum well layer away from the substrate.
  • the light-transmitting unit 102 includes a mounting seat 1021 and a light-transmitting area 1022.
  • the light-transmitting unit 102 is a lens structure formed of quartz glass, the light-transmitting area forms a convex lens, and the mounting seat is located below the convex lens .
  • the mount is connected to the non-functional area 1012 of the substrate, and the light-transmitting area is located above the LEDs.
  • a cavity 104 is formed between the mounting seat and the light-transmitting area, the LED chip 103 is located in the cavity 104, and the depth of the cavity is about 100-900 ⁇ m.
  • the center line of the LED chip coincides with the center line of the light-transmitting area (convex lens) 1022 .
  • the non-functional area 1012 of the substrate 101 is also formed with a metal plating layer, and the metal plating layer of the non-functional area is formed as a metal strip 1012-1 surrounding the functional area, and the metal strip 1012-1 is spaced from the functional area.
  • the metal plating layers of the metal strips forming the functional area and the non-functional area may be the same metal material or different metal materials. When the same metal material is used, the metal plating layers of the functional area and the non-functional area can be formed at the same time.
  • the thickness of the metal plating layer is between 30 and 100 ⁇ m, preferably about 50 ⁇ m. Since the metal plating layer has the above-mentioned thickness, the substrate 101 forms grooves 106 between adjacent metal strips (see FIG. 1d).
  • the adhesive layer 1051 includes a first portion 1051-1 over the metal strip of the non-functional area and a second portion 1051-2 on at least a portion of the substrate outside the metal strip 1012-1.
  • FIG. 1a shows that in the LED lighting device, the second part 1051-2 of the adhesive layer is formed on a part of the substrate outside the metal strip 1012-1. It can be understood that the second part 1051-2 can be formed on the metal strip On all substrates outside the strip 1012-1, and fill the gap between the mounting seat of the light-transmitting unit and the substrate outside the metal strip.
  • the distance between the light-transmitting unit and the substrate is increased, and the inner wall of the inner cavity 104 of the light-transmitting unit and the LEDs are correspondingly increased.
  • the distance between the tops of the chips can ensure that the LED chips will not be squeezed by the light-transmitting unit and protect the LED chips from damage.
  • the distance between the top of the LED chip and the inner wall of the light-transmitting unit cavity 104 can be adjusted by adjusting the height of the metal strip, so that the distance is less than 100 ⁇ m, preferably, the distance is greater than 10 ⁇ m. On the premise that the LED chip is not squeezed, the light-emitting effect of the LED chip is guaranteed.
  • This embodiment is described by taking forming a metal strip as an example. It can be understood that any material that can increase the distance between the light-transmitting unit and the substrate without affecting the optoelectronic performance of the LED chip can be used to form the strip structure.
  • it can be a stripe structure formed of insulating materials such as silicon oxide and aluminum oxide formed by deposition.
  • the thickness of the adhesive layer 1051 ranges from 35 ⁇ m to 150 ⁇ m.
  • the thickness of the first portion 1051-1 is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second portion 1051-2 is between 50 ⁇ m and 150 ⁇ m.
  • the above-mentioned adhesive layer 1051 can be selected from, for example, silica gel, white glue, fluororesin, etc., and preferably has one or more of the following characteristics: good adhesion, certain fluidity, and certain reflection effect on the light emitted by the LED chip. Therefore, while improving the airtightness of the product, the service life of the product can also be increased.
  • the above-mentioned light-transmitting unit 102 forms a lens structure, wherein the convex lens in the light-transmitting area 1022 is formed as a hemispherical convex lens.
  • the spherical diameter of the hemispherical convex lens is between 2.00mm-3.50mm, preferably 3.20mm, and the height of the entire light-transmitting unit is between 1.50mm-2.30mm, preferably 2.10mm.
  • the light-emitting angle of the LED light-emitting device is about 60°.
  • the light-emitting angle of the LED lighting device can also be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light-transmitting area. For example, when there is no filling material around the LED chip, that is, when the cavity 104 is filled with air or nitrogen, the light-emitting angle of the LED light-emitting device is between 55° and 80°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic When using reflective materials such as glue, the light-emitting angle of the LED light-emitting device 100-2 is between 80° and 120°.
  • the light-transmitting unit is also formed as a lens structure, including a mounting seat 1021 and a light-transmitting area 1022, the difference is that the light-transmitting area is formed into a semi-ellipsoid shape, And it is a semi-ellipsoid shape in the long axis direction.
  • the height of the light-transmitting unit with the semi-ellipsoidal light-transmitting area (ie, the vertical distance between the highest point and the lowest surface of the lens structure) H1 is about 3.00-3.50mm
  • the mounting seat height H2 is 0.30-0.70mm
  • the maximum width W of the convex lens is between 2.00 and 3.50 mm. As shown in FIG.
  • the light-emitting angle of the light-emitting device having the light-transmitting unit with the semi-ellipsoidal light-transmitting area is about 35°.
  • the light-emitting angle of the light-emitting device with the semi-ellipsoid light-transmitting unit can be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light-transmitting area. For example, when there is no filling material around the LED chip, that is, the cavity 104 is filled with air or nitrogen, the light-emitting angle of the light-emitting device is about 25° to 55°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic glue, etc. When the material is reflective, the light-emitting angle of the light-emitting device is between 55° and 75°.
  • any light-transmitting unit can be selected according to the requirements of the light-emitting angle.
  • the above-mentioned light-transmitting unit is a quartz glass lens, and may also be a plastic lens or the like.
  • the side wall of the substrate of the light-emitting device 100-1 of this embodiment is flush with the side wall of the lens, which is beneficial to the better positioning of the product in the braided vibration plate and better enhancement of packaging Yield.
  • the first portion 1051-1 of the adhesive layer 1051 is uniformly and completely filled between the metal strip and the lens unit without air bubbles or gaps, which can significantly increase the air tightness of the device.
  • the second part 1051-2 formed on at least part of the substrate outside the metal strip can further block water vapor and the like from entering the device, especially when the second part fills the gap between the substrate outside the metal strip and the light-transmitting unit , the airtightness of the device can be further improved.
  • This embodiment also provides a manufacturing method of the light-emitting device, as shown in FIG. 1b, the manufacturing method includes the following steps:
  • S101 Provide a substrate, the substrate has a first surface and a second surface disposed opposite to each other, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;
  • S102 Provide an LED chip, and fix the LED chip on the functional area on the first surface of the substrate;
  • a substrate 101 is first provided, and the substrate may be any suitable substrate such as a ceramic substrate, a printed circuit board, or the like.
  • the substrate 101 includes a first surface and a second surface disposed opposite to each other, a functional area 1011 is formed on the first surface, and electrode pads 1013 (refer to FIG. 1a ) that communicate with the functional area 1011 are disposed on the second surface.
  • the functional area 1011 is formed as a die bonding area for fixing the LED chip, and a cutting area 1018 is formed between adjacent functional areas.
  • an area other than the functional area 1011 is defined as a non-functional area 1012 .
  • the method further includes forming metal strips 1012-1 surrounding the functional area on a substrate outside the functional area, and the metal strips are spaced apart from the functional area.
  • the non-functional area 1012 is also formed with a metal plating layer. Specifically, the metal plating layer of the non-functional area is formed in the area outside the cutting area, and the metal plating layer is formed in the non-functional area to surround the functional area.
  • Metal strip 1012-1, the metal strip and the functional area are spaced apart from each other.
  • the above-mentioned metal strips of the functional area and the non-functional area can be formed by forming a metal plating layer on the first surface of the substrate 101 .
  • the above-mentioned metal plating layer can be formed on the first surface of the substrate 101 through processes such as etching and deposition.
  • the thickness of the metal plating layer is between 30 ⁇ m and 100 ⁇ m, preferably about 50 ⁇ m. Since the metal plating layer has the above thickness, as shown in FIG.
  • an LED chip 103 is provided.
  • the LED chip can be any type of LED chip, for example, the wavelength can be less than 400 nm, especially the wavelength is between 220 nm and 220 nm. Ultraviolet or deep ultraviolet LED chips between 385nm, in this embodiment, an ultraviolet LED chip with a wavelength between 220nm and 385nm is taken as an example.
  • the LED chip 103 is fixed to the functional area 1011 of the substrate 101 .
  • the fixing of the LED chip can be realized by various processes such as wire bonding, bonding, and welding. As shown in FIG.
  • a flip-chip LED is used as an example, and the LED chip is bonded to the functional area 1011 .
  • the electrode structure of the LED chip is drawn out through the electrode pad 1013 located on the second surface of the substrate which communicates with the functional area 1011 .
  • the LED chips are fixed on the substrate and can be arranged in different ways. 6b and 6c, the LED chips shown in FIG. 6b can be arranged side-to-side with the substrate, the side of the LED chip is parallel to the side of the substrate, and the two are basically parallel to each other.
  • the LED chips can also be arranged in the form of opposite sides of the corners of the substrate as shown in FIG. 6c , and the four corners of the LED chips are respectively opposite to the four side walls of the substrate.
  • the arrangement shown in Fig. 6c can make full use of the substrate space and improve the utilization rate of the substrate.
  • the arrangement of the LEDs can be flexibly selected according to the size of the LED chip and the size of the substrate.
  • S103 Cover the substrate with a light-transmitting plate, connect the light-transmitting plate to the substrate through an adhesive material layer on the substrate outside the functional area, and cover the LED chip.
  • the above-mentioned light-transmitting plate is made of quartz glass as an example.
  • the grooves 106 between the metal strips of the non-functional areas are first filled with adhesive material.
  • the thickness of the adhesive material filled in the grooves 106 is greater than the thickness of the metal plating layer forming the functional area and the non-functional area.
  • the bonding material is about 50 ⁇ m to 200 ⁇ m higher than the metal plating layer.
  • the bonding material may be a bonding material such as silica gel, white glue or fluororesin.
  • the quartz glass is then covered on the substrate.
  • the quartz glass is a whole piece of quartz glass with a plurality of light-transmitting units, wherein the light-transmitting units are the lens structures shown in FIG. 1a. Then follow the process shown in Figure 1f to Figure 1j to complete the process of covering the quartz glass:
  • the substrate 101 on which the adhesive material is formed and the LED chips are fixed as shown in FIG. 1d is placed in the first jig 1015 , the first jig 1015 has a slot for accommodating the substrate 101 (not shown).
  • the substrate 101 is placed in the card slot to realize the fixation of the substrate.
  • the top of the side wall of the first fixture 1015 has a positioning member.
  • the positioning member is a positioning spring 1016, and the number of positioning springs is at least two, which can be set according to actual needs. number of positioning parts. Of course, it can also be any other positioning components that can realize positioning and separation.
  • the quartz glass is placed in the second jig 1024.
  • the quartz glass is a whole piece of quartz glass 1020 including a plurality of light-transmitting units 102.
  • the light-transmitting unit 1020 includes a light-transmitting area 1022 and a mounting seat 1021 located at the periphery of the light-transmitting area.
  • the second fixture 1024 has a chamber for accommodating the quartz glass 1020.
  • the top end of the side wall of the second fixture 1024 also has a positioning member 1025 , and the positioning member 1025 cooperates with the positioning member 1016 of the first fixture 1015 .
  • the positioning member of the first fixture is the positioning spring 1016
  • the positioning of the second fixture may be the positioning hole 1025 .
  • the positioning parts of the first jig and the second jig can be interchanged, whichever can achieve positioning and separation.
  • the second jig on which the quartz glass 1020 is fixed is turned over so that the quartz glass faces the substrate 101 .
  • the positioning of the first jig and the second jig is realized by the positioning spring 1016 and the positioning hole 1025 . Through this positioning, each light-transmitting unit is aligned with the LED chip on the substrate, and preferably, the center lines of the two are coincident. As shown in FIG. 1h , at this time, the positioning spring 1016 is in contact with the positioning hole 1025 , but the quartz glass 1020 is not in contact with the substrate 101 .
  • the quartz glass is first bonded to the first jig on the substrate.
  • Layer 1051 contacts. Since a cavity 104 is formed between the mounting seat 1021 of the light-transmitting unit and the light-transmitting area (convex lens) 1022 (refer to FIG.
  • the mounting seat 1021 in the light-transmitting area first contacts the first adhesive layer on the substrate, and the LED chip Then, it is accommodated in the cavity 104 and will not be in contact with the light-transmitting area or be pressed by the light-transmitting area, thereby ensuring the performance of the LED chip.
  • the adhesive material in the groove is squeezed to flow on the surrounding metal strip, such as As shown in Figure 1j, the amount of bonding material in the grooves decreases, and the bonding material on the metal strip gradually increases.
  • the adhesive material can continue to flow to the position of the metal strip until the position where the adhesive material is lacking on the side of the metal strip is made up, covering the entire metal strip to form the first part 1051- of the adhesive layer 1051- 1, thereby realizing the tight combination of the quartz glass and the substrate.
  • the remaining bonding material in the groove forms the second part 1051-2 of the bonding layer 1051, and the second part forms a continuous structure with the first part on the metal strip, which further enhances the bonding force between the substrate and the quartz glass and enhances the device's performance.
  • Air tightness In the process of lamination and vacuuming, the adhesive layer is heated and baked to promote its flow during the heating process, and the baking process realizes its curing. At the same time, during the heating process, the pyrolytic adhesive film attached to the inner wall of the chamber of the second fixture will decompose and lose its bonding effect, so as to realize the separation of the quartz glass and the second fixture.
  • the adhesive material in the grooves flows toward the metal strip, and the adhesive material in the grooves becomes less and does not fill the grooves.
  • the amount of the adhesive material filled in the groove can be adjusted so that after the lamination is evacuated, the metal strip is evenly covered with the adhesive material, and the groove is still filled with the adhesive material. This can further improve the airtightness of the device.
  • the first jig and the second jig are removed.
  • first remove the vacuum at this time, under the action of the restoring force of the positioning spring 1016, the first jig and the second jig are initially separated, and then the second jig and the first jig are separated, and the result shown in FIG. 1k is obtained.
  • a structure covered with quartz glass 1020 is shown.
  • the silica glass is covered by the above method, and the adhesive material in the groove flows from the groove to the metal plating layer of the non-functional area, and will not flow to the functional area and will not cause pollution to the functional area.
  • it can ensure that the deviation between the center position of the lens and the center position of the chip is less than 100 ⁇ m, and the left and right deviation of the center light-emitting angle is less than ⁇ 3°.
  • S104 Perform cutting, aligning the cutting area of the substrate, and perform cutting until the substrate is cut through, so as to form the light-emitting device.
  • the cutting area 1018 of the alignment substrate 101 is cut along the direction indicated by the arrow A1 to obtain the LED light-emitting device shown in FIG. 1a .
  • a whole piece of quartz glass including a plurality of light-transmitting units is covered on the substrate, and the LED light-emitting device is obtained by cutting, so as to ensure that the sidewall of the obtained light-emitting device is flush, that is, the LED chip is perpendicular to the LED chip.
  • the light-transmitting unit and the substrate have the same width, and the sidewall of the light-transmitting unit is flush with the sidewall of the substrate.
  • Such a structure is conducive to better positioning of the product in the braided vibration plate, and better improvement of the packaging yield.
  • the LED light-emitting device 100-2' includes a substrate 101, an LED chip 103 disposed on the first surface of the substrate, covering the LED chip 103 and disposed on the substrate 101
  • the light-transmitting unit 102 is connected to the substrate 101 and the adhesive material layer of the light-transmitting unit 102 .
  • the substrate 101 , the LED chip 103 and the light-transmitting unit 102 are all the same as the substrate, the LED chip and the light-transmitting unit in the first embodiment, which will not be repeated here. The differences are:
  • the adhesive material layer includes a first adhesive layer 1051 located between the non-functional area 1011 and the mounting seat and a second adhesive layer 1052 located on the sidewall of the mounting seat.
  • the first adhesive layer 1051 and the second adhesive layer 1052 located on the same sidewall of the LED light-emitting device form a continuous structure, as shown in FIG. 2a, forming an “L”-like structure.
  • the thickness t1 of the first adhesive layer 1051 is between 50 ⁇ m and 150 ⁇ m
  • the thickness t2 of the second adhesive layer is between 200 ⁇ m and 400 ⁇ m.
  • the non-functional area 1012 of the substrate 101 of the LED light emitting device 100-2 is also formed with a metal plating layer.
  • the metal plating layer of the non-functional area is formed on the The area outside the cutting area 1018'.
  • the metal plating layers of the functional area and the non-functional area can be formed at the same time, and the metal plating layers of the functional area 1011 and the non-functional area 1012 are spaced apart from each other.
  • the thickness of the metal plating layer is between 30 and 100 ⁇ m, preferably about 50 ⁇ m. Since the metal plating layer has the above-mentioned thickness, the substrate 101 forms grooves 106 between adjacent non-functional regions (see FIG. 6a ).
  • the first adhesive layer 1051 includes a first part 1051-1 located above the metal plating layer of the non-functional area and a second part 1051-2 located in the peripheral area.
  • the thickness of the first portion 1051-1 is between 35 ⁇ m and 50 ⁇ m
  • the thickness of the second portion 1051-2 is between 50 ⁇ m and 150 ⁇ m.
  • the first adhesive layer and the second adhesive layer also form an "L"-like structure.
  • the adhesive material layer with the "L"-shaped structure forms a covering structure for the non-functional area of the device and the mounting seat, and the above-mentioned adhesive material layer is fully formed between the mounting seat and the substrate, and there is no problem caused by the lack of the bonding material. Air bubbles or gaps can significantly improve the air tightness and reliability of the product.
  • first adhesive layer 1051 and the second adhesive layer 1052 can be formed of the same material or different materials, such as silica gel, white glue, fluororesin, etc., and preferably have one or more of the following characteristics: It is a material with good performance, certain fluidity, and a certain reflection effect on the light emitted by the LED chip, which can improve the air tightness of the product and also improve the service life of the product.
  • the above-mentioned light-transmitting unit 102 forms a lens structure, wherein the convex lens in the light-transmitting area 1022 is formed as a hemispherical convex lens.
  • the spherical diameter of the hemispherical convex lens is between 2.00mm-3.50mm, preferably 3.20mm, and the height of the entire light-transmitting unit is between 1.50mm-2.30mm, preferably 2.10mm.
  • the light-emitting angle of the LED light-emitting device is about 60°.
  • the light-emitting angle of the LED lighting device can also be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light-transmitting area. For example, when there is no filling material around the LED chip, that is, when the cavity 104 is filled with air or nitrogen, the light-emitting angle of the LED light-emitting device is between 55° and 80°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic When using reflective materials such as glue, the light-emitting angle of the LED light-emitting device 100-2 is between 80° and 120°.
  • the light-transmitting unit is also formed as a lens structure, including a mounting seat 1021 and a light-transmitting area 1022, the difference is that the light-transmitting area is formed as a semi-ellipsoid , and it is a semi-ellipsoid in the long axis direction.
  • the height of the light-transmitting unit with the semi-ellipsoidal light-transmitting area (ie, the vertical distance between the highest point and the lowest surface of the lens structure) H1 is about 3.00-3.50mm
  • the mounting seat height H2 is 0.30-0.70mm
  • the maximum width W of the convex lens is between 2.00 and 3.50 mm.
  • the light-emitting angle of the light-emitting device having the light-transmitting unit with the semi-ellipsoidal light-transmitting area is about 35°.
  • the light-emitting angle of the light-emitting device with the semi-ellipsoid light-transmitting unit can be adjusted by adjusting the filling material in the cavity 104 between the mounting seat and the light-transmitting area. For example, when there is no filling material around the LED chip, that is, the cavity 104 is filled with air or nitrogen, the light-emitting angle of the light-emitting device is about 25° to 55°; if the surrounding of the LED chip, that is, the cavity 104 is filled with inorganic glue, etc. When the material is reflective, the light-emitting angle of the light-emitting device is between 55° and 75°.
  • any light-transmitting unit can be selected according to the requirements of the light-emitting angle.
  • the light-transmitting unit is a quartz glass lens, and may also be a plastic lens or the like.
  • This embodiment also provides a manufacturing method of the light-emitting device. As shown in FIG. 5 , the manufacturing method includes the following steps:
  • S201 Provide a substrate, the substrate has a first surface and a second surface disposed opposite to each other, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;
  • S202 Provide an LED chip, and fix the LED chip on the functional area on the first surface of the substrate;
  • a substrate 101 is first provided, and the substrate may be any suitable substrate such as a ceramic substrate, a printed circuit board, or the like.
  • This embodiment takes a flat ceramic substrate as an example for description.
  • the substrate 101 includes a first surface and a second surface disposed opposite to each other, a functional area 1011 and a non-functional area 1012 are formed on the first surface, and an electrode pad 1013 that communicates with the functional area 1011 is disposed on the second surface (refer to FIG. 2a and Figure 2b).
  • the functional area 1011 is formed as a die bonding area for fixing the LED chip, and a cutting area 1018' is formed between adjacent functional areas.
  • an area other than the functional area 1011 is defined as a non-functional area 1012 . .
  • the non-functional area 1012 is also formed with a metal plating layer.
  • the metal plating layer of the non-functional area is formed in an area other than the cutting area 1018 ′.
  • the metal plating layers of the functional area and the non-functional area can be formed at the same time, and the metal plating layers of the functional area 1011 and the non-functional area 1012 are spaced apart from each other.
  • the above-mentioned metal plating layer can be formed on the first surface of the substrate 101 through processes such as etching and deposition.
  • the thickness of the metal plating layer is between 30 and 100 ⁇ m, preferably about 50 ⁇ m. Since the metal plating layer has the above thickness, the substrate 101 forms a groove 106 in the cutting area 1018 (see FIG. 6a ).
  • an LED chip 103 is provided.
  • the LED chip can be any type of LED chip, for example, it can be an ultraviolet light with a wavelength of less than 400 nm, especially a wavelength between 220 nm and 385 nm. Or a deep ultraviolet LED chip. In this embodiment, an ultraviolet LED chip with a wavelength between 220 nm and 385 nm is used as an example.
  • the LED chip 103 is fixed to the functional area 1011 of the substrate 101 .
  • the fixing of the LED chip can be realized by various processes such as wire bonding, bonding, and welding. As shown in FIG.
  • a flip-chip LED is used as an example, and the LED chip is bonded to the functional area 1011 .
  • the electrode structure of the LED chip is drawn out through the electrode pad 1013 located on the second surface of the substrate which communicates with the functional area 1011 .
  • the LED chips are fixed on the substrate and can be arranged in different ways. As shown in Figures 6b and 6c, the LED chips and the substrate shown in Figure 6b can be arranged edge-to-edge, the sides of the LED chips are parallel to the sides of the substrate, and the two are basically parallel to each other.
  • the LED chips can also be arranged in the form of opposite sides of the corners of the substrate as shown in FIG. 6c , and the four corners of the LED chips are respectively opposite to the four side walls of the substrate.
  • the arrangement shown in FIG. 6c can make full use of the substrate space and improve the utilization rate of the substrate.
  • the arrangement of LEDs can be flexibly selected according to the size of the LED chip and the size of the substrate.
  • S203 Cover the substrate with a light-transmitting plate, connect the light-transmitting plate to the substrate through a first adhesive layer on the substrate outside the functional area, and cover the LED chip with the light-transmitting plate .
  • a light-transmitting plate is covered on the substrate to realize the packaging of the LED chips.
  • the above-mentioned light-transmitting plate is made of quartz glass as an example.
  • a first adhesive layer 1051 is formed on the surface of the non-functional area of the substrate 101 .
  • the first adhesive layer 1051 may be an adhesive material with certain fluidity, such as silica gel, white glue, or fluororesin.
  • a first part 1051-1 of the first adhesive layer is formed above the metal plating layer of the non-functional area 1012, and its thickness is controlled between 35 ⁇ m and 100 ⁇ m, for example, about 50 ⁇ m.
  • the quartz glass is then covered on the substrate.
  • the quartz glass is a whole piece of quartz glass with a plurality of light-transmitting units, wherein the light-transmitting units are the lens structures shown in FIG. 2 .
  • the specific process of covering the quartz glass is shown in Figures 8a to 8e:
  • the first fixture 1015 has a slot for accommodating the substrate 101 ( (not shown in detail), the substrate 101 is placed in the card slot to realize the fixation of the substrate.
  • the top of the side wall of the first fixture 1015 has a positioning member.
  • the positioning member is a positioning spring 1016, and the number of positioning springs is at least two, which can be set according to actual needs. number of positioning parts. Of course, it can also be any other positioning components that can realize positioning and separation.
  • the quartz glass is placed in the second jig 1024.
  • the quartz glass is a whole piece of quartz glass 1020 including a plurality of light-transmitting units 102.
  • the light-transmitting unit 1020 includes a light-transmitting area 1022 and a mounting seat 1021 located at the periphery of the light-transmitting area.
  • the second fixture 1024 has a chamber for accommodating the quartz glass 1020.
  • the top end of the side wall of the second fixture 1024 also has a positioning member 1025 , and the positioning member 1025 cooperates with the positioning member 1016 of the first fixture 1015 .
  • the positioning member of the first fixture is the positioning spring 1016
  • the positioning of the second fixture may be the positioning hole 1025 .
  • the positioning parts of the first jig and the second jig can be interchanged, whichever can achieve positioning and separation.
  • the second jig on which the quartz glass 1020 is fixed is turned over so that the quartz glass faces the substrate 101 .
  • the positioning of the first jig and the second jig is realized by the positioning spring 1016 and the positioning hole 1025 . Through this positioning, each light-transmitting unit is aligned with the LED chip on the substrate, and preferably, the center lines of the two are coincident. As shown in FIG. 8 c , at this time, the positioning spring 1016 is in contact with the positioning hole 1025 , and the quartz glass 1020 is not in contact with the substrate 101 .
  • the mounting seat 1021 of the light-transmitting unit is formed between the mounting seat 1021 of the light-transmitting unit and the light-transmitting area (convex lens) 1022 , during the lamination process, the mounting seat 1021 of the light-transmitting area is firstly bonded to the first substrate on the substrate
  • the LED chip is accommodated in the cavity 104 and will not be in contact with the light-transmitting area or be pressed by the light-transmitting area, thereby ensuring the performance of the LED chip.
  • the first adhesive layer is heated and baked to achieve its curing.
  • the pyrolysis adhesive film attached to the inner wall of the chamber of the second fixture will decompose and lose its bonding effect, and the quartz glass will be separated from the second fixture.
  • the first jig and the second jig are removed.
  • first remove the vacuum at this time, under the action of the restoring force of the positioning spring 1016, the first jig and the second jig are initially separated, and then the second jig and the first jig are separated, and the result shown in FIG. 8e is obtained.
  • a structure covered with quartz glass 1020 is shown.
  • the quartz glass by covering the quartz glass by the above method, it can ensure that the deviation between the center position of the lens and the center position of the chip is less than 100 ⁇ m, and the left and right deviation of the center light-emitting angle is less than ⁇ 3°.
  • the difference from the first bonding layer shown in FIG. 7 a is that, as shown in FIG. 7 b , the first bonding layer is formed on the The first adhesive layer 1051 is filled in the groove 106 between the metal plating layers.
  • the thickness of the first adhesive layer 1051 in the groove 106 is greater than the thickness of the metal plating layer forming the functional area and the non-functional area.
  • the first adhesive layer 1051 is about 50 ⁇ m ⁇ 200 ⁇ m higher than the metal plating layer.
  • first jig and the second jig into the lamination equipment that can be evacuated as a whole, so that the quartz glass is first contacted with the first adhesive layer 1051 in the groove, and then during the lamination process, the high The metal coating bonding material in the non-functional area is extruded to flow on the surrounding metal coating, so that the amount of bonding material in the groove position of the original filled silica gel is reduced, and the metal coating in the non-functional area is covered with bonding material. Quartz glass fit. Then vacuumize, while maintaining the vacuum, the adhesive material in the groove higher than the metal coating will form an irregular disguised flow, and flow again to the metal coating in the non-functional area, making up for the groove and the non-functional area.
  • the adhesive material in the groove flows to the metal plating layer of the non-functional area through the groove, and will not flow to the functional area and will not cause pollution to the functional area. It can also ensure that the deviation between the center position of the lens and the center position of the chip is less than 100 ⁇ m, and the left and right deviation of the center light-emitting angle is less than ⁇ 3°.
  • the adhesive material in the grooves at this time forms the second portion 1051-2 of the first adhesive layer 1051, and the adhesive material over the metal plating layer of the non-functional area forms the first portion 1051-1 of the first adhesive layer.
  • a first groove 1023 is formed between adjacent light-transmitting units and above the cutting area, and the first groove 1023 communicates with the groove 106 above the cutting area on the substrate.
  • the first trenches 1023 are filled with adhesive material to form second adhesive layers 1052 , respectively.
  • the second adhesive layer may be the same material as the first adhesive layer or a different material. It can also be selected from silica gel, white glue or fluororesin. Taking silica gel as an example, after filling the groove and the first groove with silica gel to form a second adhesive layer, the silica gel is baked to be cured. As shown in FIG. 10 , when the groove 106 is not filled with the first adhesive layer, the adhesive material filled into the first groove will flow into and fill the groove 106 to form the second adhesive layer of the first adhesive layer. Section 1051-2.
  • the thickness of the first adhesive layer is between 35 ⁇ m and 150 ⁇ m
  • the thickness of the second adhesive layer is greater than that of the first adhesive layer
  • the thickness of the second adhesive layer is greater than that of the first adhesive layer.
  • the thickness of the layer is about 200 ⁇ m to 400 ⁇ m. More specifically, along the light emitting direction of the LED light-emitting device, the thickness of the first part of the first adhesive layer is between 35 ⁇ m and 50 ⁇ m, and the thickness of the second part is between 50 ⁇ m and 150 ⁇ m.
  • S206 Perform a second cutting, aligning the cutting area and cutting until the substrate is cut through, so as to form the light-emitting device.
  • the second adhesive layer is formed.
  • the product is cut along the direction shown by the arrow A12 in FIG. 10, and the second adhesive layer 1052 and the substrate 101 are cut in turn, The substrate 101 is cut through to obtain the LED lighting device shown in FIG. 2b.
  • the width of the second cutting is smaller than the width of the first cutting, thereby ensuring that the sidewall of the formed LED light-emitting device retains A layer of adhesive material of a certain width.
  • the width of the first cutting is twice the cutting width of the second cutting, and the thickness of the adhesive material layer remaining on the sidewall of the LED lighting device is 1 times the cutting width of the second cutting. /2.
  • the sidewall of the LED light-emitting device is generally flat, that is, the sidewall of the second adhesive layer, the sidewall of the first adhesive layer and the sidewall of the substrate are flush, which is beneficial to the product in the The position of the tape vibration plate is better placed, and the packaging yield is better improved.
  • the provided quartz glass is a plurality of individual light-transmitting units 102 , and the light-transmitting units are also lens structures, including mounting seats 1021 and a light-transmitting area 1022 in the form of a convex lens.
  • the light-transmitting unit 102 may be an independent light-transmitting unit obtained by cutting a whole piece of quartz glass, or may be an independent light-transmitting unit formed separately.
  • the substrate 101 on which the first adhesive layer is formed and the LED chips are fixed is also placed in the first jig 1015. The difference from FIG. 8a is that the first jig 1015 shown in FIG.
  • the top of the side wall of the 100 has a plurality of positioning components, for example, in this embodiment, the positioning components are positioning springs 1016, and the number of the positioning springs corresponds to the number of positioning components of the second fixture to be described below. Of course, it can also be any other positioning components that can realize positioning and separation.
  • the second fixture 1024 has a plurality of cavities for accommodating light-transmitting units, the top of the side wall of the second fixture 1024 and the top of the side wall of the adjacent cavity are provided
  • the positioning part 1025 cooperates with the positioning part 1016 of the first fixture 1015 .
  • the positioning member of the first fixture is the positioning spring 1016
  • the positioning of the second fixture may be the positioning hole 1025 .
  • the positioning parts of the first jig and the second jig can be interchanged, whichever can achieve positioning and separation. Subsequent steps are the same as those shown in FIG. 8c to FIG. 8e, and are not repeated here.
  • the first grooves 1023 are formed between the light-transmitting units without first cutting. After the structure shown in FIG. 11a is obtained, the subsequent steps are still performed as shown in FIG. 10, and finally the LED light-emitting device shown in FIG. 2b is also obtained.
  • the adhesive material layer of the LED lighting device 100-2" further includes a fourth adhesive layer 1054 formed on the upper surface of the partially light-transmitting unit.
  • the fourth adhesive layer is formed on at least part of the upper surface of the mount of the light-transmitting unit.
  • the fourth adhesive layer is formed on the light-transmitting unit part of the mount on the upper surface. It is understood that the fourth adhesive layer may be formed on the entire upper surface of the mount.
  • the fourth adhesive layer and the second adhesive layer form a continuous structure, and the fourth adhesive layer can be formed simultaneously with the formation of the second adhesive layer.
  • the thickness of the fourth adhesive layer is about 10 ⁇ m ⁇ 200 ⁇ m.
  • the above-formed adhesive material layer wraps the light-transmitting unit, which can further improve the airtightness of the device, and at the same time increase the bonding firmness of the light-transmitting unit and the substrate.
  • This embodiment also provides an LED light-emitting device, and the similarities with the second embodiment will not be repeated, but the differences are:
  • the adhesive material layer connecting the substrate 101 and the light-transmitting unit 102 includes a first adhesive layer between the non-functional area 1012 and the mounting seat, in addition to In addition to the layer 1051 and the second adhesive layer 1052 on the sidewalls of the mount, it also includes a third adhesive layer 1053 on at least part of the sidewalls of the substrate 101 .
  • the third adhesive layer forms a continuous structure with the first adhesive layer and the second adhesive layer, forming a "T"-like structure.
  • a step 1017 is formed on the sidewall of the substrate 101, and a third adhesive layer is formed on the surface and sidewall of the step 1017, and is connected with the second adhesive layer.
  • the above-mentioned "T"-shaped adhesive material layer wraps the light-transmitting unit and part of the substrate, which can further improve the airtightness of the product.
  • This embodiment also provides the manufacturing method of the LED light-emitting device shown in FIG. 12a, and the difference between this method and the manufacturing method of the LED light-emitting device provided in the second embodiment is:
  • the above-mentioned first cutting is continued along the direction indicated by the arrow A11 to cut part of the substrate 101 , and A second trench 1014 is formed in the substrate 101 .
  • the second trench forms a continuous structure with the groove 106 and the first trench 1023 .
  • the second trench 1014 and the first trench 1023 are filled with an adhesive material to form a third adhesive layer 1053 and a second adhesive layer 1052 in sequence. Then, as shown in FIG.
  • FIG. 12 a is obtained.
  • LED lighting device shown.
  • FIG. 11 after a plurality of independent light-transmitting units are covered on the substrate 101 and first grooves 1023 are formed between adjacent light-transmitting units, As shown in FIG. 15 , along the direction indicated by the arrow A11 , the substrate is first cut through the first groove 1023 , a part of the substrate 101 is cut, and the second groove 1014 is formed on the substrate 101 .
  • the substrate when the first cutting is performed to form the second groove, the substrate is partially cut, and the thickness of the cut substrate, that is, the depth of the second groove formed is about 1% of the overall thickness of the substrate. /3 to 2/3, so as to ensure the strength of the substrate itself while forming the second groove.
  • the second trench 1014 and the first trench 1023 are filled with an adhesive material to form a third adhesive layer 1053 and a second adhesive layer 1052 in sequence.
  • a second cutting is performed along the direction indicated by the arrow A12 , and the second adhesive layer 1052 , the third adhesive layer 1053 and the substrate 101 are cut in sequence until the substrate is cut through, and FIG. 12 a is obtained.
  • LED lighting device shown. As shown in FIG. 12a, in the light-emitting device 100-3, along the light-emitting direction of the LED light-emitting device, that is, the direction indicated by the arrow O in FIG.
  • the thickness t1 of the first adhesive layer 1051 is between 35 ⁇ m and 150 ⁇ m, wherein, The thickness of the first part 1051-1 is between 35 ⁇ m and 50 ⁇ m, the thickness of the second part 1051-2 is between 50 ⁇ m and 150 ⁇ m, the thickness t2 of the second adhesive layer is between 200 ⁇ m and 400 ⁇ m; the thickness t3 of the third adhesive layer is about It is about 1/3 to 2/3 of the overall thickness of the substrate.
  • a third adhesive layer 1053 is formed on the entire sidewall of the substrate to wrap the sidewall.
  • the adhesive material layer formed by the first adhesive layer 1051 , the second adhesive layer 1052 and the third adhesive layer 1053 forms a wrapping effect on the lens 102 and the substrate 101 , which can further improve the Airtightness of the device.
  • the difference between the manufacturing method of the LED light-emitting device shown in FIG. 12b and the manufacturing method shown in FIG. 12a is that it is basically placed on a jig capable of fixing the substrate, for example, the substrate can be adhered to an adhesive film superior.
  • the substrate is then cut and completely cut through the substrate to form a second trench that runs through the entire substrate.
  • a third adhesive layer covering the entire sidewall of the substrate as shown in FIG. 12b is formed in the second trench. Subsequent steps are the same as the steps of forming the LED light-emitting device of FIG. 12a, and are not repeated here.
  • the adhesive material layer of the LED lighting device 100-4' further includes a fourth adhesive layer 1054 formed on the upper surface of the partially transparent unit.
  • the fourth adhesive layer is formed on at least part of the upper surface of the mounting seat of the light-transmitting unit.
  • the fourth adhesive layer is formed on a part of the upper surface of the mount of the light-transmitting unit. It is understood that the fourth adhesive layer may be formed on the entire upper surface of the mount.
  • the fourth adhesive layer and the second adhesive layer form a continuous structure, and the fourth adhesive layer can be formed simultaneously with the formation of the second adhesive layer.
  • the thickness t4 of the fourth adhesive layer is about 10 ⁇ m ⁇ 200 ⁇ m.
  • the above-formed adhesive material layer wraps the light-transmitting unit, which can further improve the airtightness of the device, and at the same time increase the bonding firmness of the light-transmitting unit and the substrate.
  • the LED light-emitting device 200-1 includes a substrate 201, an LED chip 203 disposed on the first surface of the substrate, covering the LED chip 203 disposed on the substrate 201.
  • the light-transmitting unit 102 is connected to the substrate 201 and the adhesive material layer of the light-transmitting unit 202 .
  • the light-transmitting unit 102 is the same as the light-transmitting unit 102 in the first embodiment
  • the LED chip 203 is the same as the LED chip 103 in the first embodiment
  • the adhesive material layer in this embodiment is also the same as that in the second embodiment.
  • the material layers are the same and will not be repeated here. The difference from the second embodiment is:
  • the base plate 201 is a bracket having a bowl-cup structure.
  • the substrate 201 also includes functional regions 2011 and non-functional regions 2012 formed on the first surface, and electrode pads 2013 provided on the second surface and communicating with the functional regions 2011 .
  • the functional area 2011 is formed on the bottom surface of the bowl-cup structure
  • the non-functional area is the upper surface of the side wall 2010 of the substrate
  • the non-functional area includes a cutting area 2018'.
  • the functional area can also be formed by a metal plating layer formed on the bottom surface of the bowl-cup structure, and the thickness of the metal plating layer is between 35 ⁇ m-100 ⁇ m, preferably about 50 ⁇ m.
  • the upper surface of the sidewall 2010 is directly used as the non-functional area.
  • the adhesive material layer of the LED light-emitting device of this embodiment also forms a structure similar to an "L" shape, so the air tightness and reliability of the device can be improved.
  • the LED light-emitting device 200-1' includes a substrate 201, an LED chip 203 disposed on the first surface of the substrate, covering the LED chip 203 and disposed on the substrate 201
  • the light-transmitting unit 102 is connected to the substrate 201 and the adhesive material layer of the light-transmitting unit 202 .
  • the light-transmitting unit 102 of the LED light-emitting device is a lens structure, and the inner side of the lens structure is The surface, that is, the surface close to the side of the LED chip, is a plane structure, and the light-transmitting unit 102 does not form the cavity shown in FIG. 16a, but is flush with the lower surface of the mounting seat.
  • the light-transmitting unit reduces the distance between the lens structure and the LED chip, can provide better transmittance, and improve the light-emitting effect of the device on the basis of improving the air-tightness of the device.
  • the LED light-emitting device 200-2 includes a substrate 201, an LED chip 203 disposed on the first surface of the substrate, covering the LED chip 203 disposed on the substrate 201.
  • the light-transmitting unit 102 is connected to the substrate 201 and the adhesive material layer of the light-transmitting unit 202 .
  • the adhesive material layer includes In addition to the first adhesive layer 2051 between the non-functional area 2012 and the mount 1021 and the second adhesive layer 2052 on the sidewall of the mount, a third adhesive layer on at least part of the sidewall of the substrate 201 is included. Junction layer 2053.
  • the third adhesive layer forms a continuous structure with the first adhesive layer and the second adhesive layer, forming a "T"-like structure.
  • the adhesive material layer of the LED light-emitting device of this embodiment also forms a structure similar to a "T" shape, so the airtightness and reliability of the device can be improved.
  • the LED light-emitting device 200-2' includes a substrate 201, and an LED chip 203 disposed on the first surface of the substrate, covering the LED chip 203 and disposed on the substrate 201
  • the light-transmitting unit 102 is connected to the substrate 201 and the adhesive material layer of the light-transmitting unit 202 .
  • the light-transmitting unit 102 of the LED light-emitting device is a lens structure, and the inner side of the lens structure is The surface, that is, the surface on the side close to the LED chip, is a planar structure, and the light-transmitting unit 102 does not form the cavity shown in FIG. 17a, but is flush with the lower surface of the mounting seat.
  • the light-transmitting unit reduces the distance between the lens structure and the LED chip, can provide better transmittance, and improve the light-emitting effect of the device on the basis of improving the air-tightness of the device.
  • the LED light-emitting device 200-3 includes a substrate 201, an LED chip 203 disposed on the first surface of the substrate, covering the LED chip 203 disposed on the substrate 201.
  • the light-transmitting unit 102 is connected to the substrate 201 and the adhesive material layer of the light-transmitting unit 202 .
  • the above-mentioned base plate 201 is the same as the base plate of the fourth embodiment, and both are brackets with cups.
  • the LED chip 203 is fixed in the cup provided with the functional area 2011 , and the upper surface of the side wall 2010 of the bracket serves as the non-functional area 2012 .
  • the light-transmitting unit 202 has a planar structure, for example, a flat quartz glass or plastic.
  • a plane quartz glass is used as an example for description.
  • the thickness of the plane quartz glass plate is smaller than the thickness of the LED chip and smaller than the height of the side wall of the cup holder.
  • the thickness of the quartz glass is about 350 ⁇ m
  • the thickness of the chip is about 500 ⁇ m
  • the thickness of the side wall of the cup holder is greater than 1000 ⁇ m.
  • the light-transmitting unit 202 also includes a mounting seat 2021 and a light-transmitting area 2022.
  • the mounting seat is attached to the upper surface of the side wall 2010 of the substrate 201 through an adhesive material layer.
  • LED chips As shown in FIG. 18a, the side walls of the LED lighting device 200-1 are flush, that is, the side walls of the light-transmitting unit, the side walls of the adhesive material layer 1051, and the side walls of the cup holder are flush. Such a structure is conducive to better positioning of the product in the braided vibration plate, and better improvement of the packaging yield.
  • the present embodiment also provides a method for manufacturing the LED light-emitting device shown in FIG. 18a .
  • the method also includes the following steps:
  • S101 Provide a substrate, the substrate has a first surface and a second surface disposed opposite to each other, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;
  • S102 Provide an LED chip, and fix the LED chip on the functional area on the first surface of the substrate;
  • a base plate 201 is provided first, and the base plate is a bracket with a cup.
  • the substrate 201 includes a first surface and a second surface disposed opposite to each other, a functional area 2011 is formed on the first surface, an electrode pad 2013 connected to the functional area 2011 is disposed on the second surface, and the functional area is formed on the inner surface of the cup superior.
  • the above-mentioned functional region can be formed by forming a metal plating layer on the first surface of the substrate 201 , and the thickness of the metal plating layer is between 30 ⁇ m and 100 ⁇ m, preferably about 50 ⁇ m.
  • the above-mentioned functional region 2011 can be formed on the first surface of the substrate 201 through processes such as etching and deposition.
  • a part of the upper surface of the side wall 2010 is directly used as the non-functional area 2012 , and the cutting area 2018 of the non-functional area is formed on the upper surface of the side wall 2010 of the bracket.
  • an LED chip 203 is provided.
  • the LED chip can be any type of LED chip, for example, can be an ultraviolet or deep ultraviolet LED with a wavelength of less than 385 nm, especially a wavelength between 220 nm and 385 nm.
  • an ultraviolet LED chip with a wavelength between 220 nm and 385 nm is used as an example.
  • the LED chip 203 is fixed on the functional area 2011 of the substrate 201 and fixed in the bowl.
  • the fixing of the LED chip can be realized by various processes such as wire bonding, bonding, and welding. As shown in FIG.
  • a flip-chip LED is used as an example, and the LED chip is bonded to the functional area 2011 .
  • the electrode structure of the LED chip is drawn out through the electrode pad 2013 located on the second surface of the substrate which communicates with the functional area 2011 .
  • S103 Cover the substrate with a light-transmitting plate, and connect the light-transmitting plate to the substrate through an adhesive layer on the substrate outside the functional area, and the light-transmitting plate covers the LED chips;
  • a light-transmitting plate is covered on the substrate to realize the packaging of the LED chips.
  • the above-mentioned light-transmitting plate is made of quartz glass as an example.
  • an adhesive layer 2051 is formed on the upper surface of the sidewall 2010 of the substrate 201 .
  • the adhesive layer 2051 can be silica gel, white glue or fluororesin.
  • the adhesive layer has certain fluidity, and its thickness is controlled to be less than 50 ⁇ m. Quartz glass is then overlaid on the substrate and attached to the adhesive layer.
  • the quartz glass is a whole piece of quartz glass 2020 with a plurality of light-transmitting units, wherein the light-transmitting units are the flat-plate light-transmitting units 202 shown in FIG. 18a.
  • the process of FIGS. 8 a to 8 d can be used to cover the quartz glass 2020 on the substrate 201 , and the process will not be described in detail here, and reference may be made to the description of the first embodiment.
  • each light-transmitting unit corresponds to each LED chip one-to-one.
  • the quartz glass by covering the quartz glass by the above method, it can ensure that the deviation between the center position of the lens and the center position of the chip is less than 100 ⁇ m, and the left and right deviation of the center light-emitting angle is less than ⁇ 3°.
  • S104 Perform cutting, aligning the cutting area of the substrate, and perform cutting until the substrate is cut through, so as to form the light-emitting device.
  • the cutting area of the side wall of the bracket is aligned and cut until the substrate 201 is cut to obtain the LED light-emitting device shown in FIG. 18a.
  • the adhesive material layer includes a first adhesive layer 2051 on the surface of the side wall and a first adhesive layer 2051 on the light-transmitting unit.
  • the above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, forming a structure similar to an "L" shape, which forms a wrapping effect on the light-transmitting unit, thereby greatly improving the adhesion between the light-transmitting unit and the substrate. properties and airtightness of the device.
  • forming the light-emitting device shown in FIG. 18b also includes the following steps:
  • S201 Provide a substrate, the substrate has a first surface and a second surface disposed opposite to each other, a functional area is formed on the first surface, and a cutting area is formed between adjacent functional areas;
  • S202 Provide an LED chip, and fix the LED chip on the functional area on the first surface of the substrate;
  • S203 covering the substrate with a light-transmitting plate, and connecting the light-transmitting plate to the substrate through a first adhesive layer on the substrate outside the functional area, and the light-transmitting plate covers the LED chips;
  • steps S201-S203 are the same as the steps S101-S103 of forming the light-emitting device of FIG. 18a, and are not repeated here.
  • the first trench 2023 is filled with an adhesive material to form a second adhesive layer 2052 .
  • the second adhesive layer may be the same material as the first adhesive layer or a different material. It can also be selected from silica gel, white glue or fluororesin. Taking silica gel as an example, after the second adhesive layer 2052 is formed by filling the first groove with silica gel, the silica gel is baked to be cured.
  • the thickness of the first adhesive layer is smaller than the thickness of the second adhesive layer, and the thickness of the first adhesive layer is about 35 ⁇ m ⁇ 150 ⁇ m, and the thickness of the second adhesive layer is about 200 ⁇ m ⁇ 400 ⁇ m .
  • S206 Perform a second cutting, cutting along the second adhesive layer until the substrate is cut through, so as to form the light-emitting device.
  • the product is cut along the direction indicated by the arrow A22 in FIG. 23, and the second adhesive layer 2052, the first adhesive layer 2052, the first The adhesive layer 2051 and the substrate 201 are cut through the substrate 201 to obtain the LED light-emitting device shown in FIG. 18b.
  • the width of the second cutting is smaller than the width of the first cutting, thereby ensuring that the sidewalls of the formed LED light-emitting device remain with A layer of adhesive material of a certain width.
  • the width of the first cutting is twice the cutting width of the second cutting, and the thickness of the adhesive material layer remaining on the sidewall of the LED lighting device is 2 times the cutting width of the second cutting. times.
  • the sidewall of the LED light-emitting device is generally flat, that is, the sidewall of the second adhesive layer, the sidewall of the first adhesive layer and the sidewall of the substrate are flush. At the same time of air tightness, it is beneficial to better position the product in the tape vibration plate, and better improve the packaging yield.
  • the provided quartz glass is a plurality of individual light-transmitting units 202 , and the light-transmitting units are also flat quartz glass, and the light-transmitting units are It includes a mounting seat 2021 and a light-transmitting area 2022 .
  • the light-transmitting unit 202 may be an independent light-transmitting unit obtained by cutting a whole piece of quartz glass, or may be an independent light-transmitting unit formed separately.
  • a plurality of light-transmitting units are covered on the substrate through the processes shown in FIGS. 8 a to 8 d to obtain the structure shown in FIG. 24 .
  • the first grooves 2023 are formed between the light-transmitting units without first cutting. After the structure shown in FIG. 24 is obtained, the subsequent steps are still performed as shown in FIG. 23 , and finally the LED light-emitting device shown in FIG. 18 is also obtained.
  • This embodiment also provides an LED light-emitting device, and the similarities with the eighth embodiment will not be repeated, but the differences are:
  • the adhesive material layer connecting the substrate 201 and the light-transmitting unit 202 in the LED lighting device 200-4 of the present embodiment includes a first adhesive layer located between the side wall surface of the cup holder and the mounting seat.
  • a third adhesive layer 2053 located on a part of the sidewall of the substrate 201 it also includes a third adhesive layer 2053 located on a part of the sidewall of the substrate 201 .
  • the third adhesive layer forms a continuous structure with the first adhesive layer and the second adhesive layer, forming a "T"-like structure.
  • a step 2017 is formed on the side wall of the substrate 201 (and the side wall of the side wall 2010), and the third adhesive layer is formed on the surface and side wall of the step 2017, and is connected with the third adhesive layer and the third adhesive layer.
  • Two adhesive layers are connected.
  • the above-mentioned "T"-shaped adhesive material layer wraps the light-transmitting unit and part of the substrate, which can further improve the airtightness of the product.
  • This embodiment also provides the manufacturing method of the LED light-emitting device shown in FIG. 25a.
  • the difference between this method and the manufacturing method of the LED light-emitting device provided in the first embodiment is:
  • FIG. 26 after the first groove 1023 is formed by cutting through the quartz glass 2020 through the first cutting shown in FIG. 22 , the above-mentioned first cutting is continued along the direction shown by the arrow A21 to cut part of the substrate 201 , a second trench 2014 is formed in the substrate 201 .
  • the second trench and the first trench 2023 form a continuous structure.
  • the second trench 2014 and the first trench 2023 are filled with an adhesive material to form a third adhesive layer 2053 and a second adhesive layer 20523 in sequence.
  • the second cutting is performed along the direction indicated by the arrow A22, and the third adhesive layer 2053, the second adhesive layer 2052 and the substrate 201 are cut in sequence until the substrate is cut through, and FIG. 25a is obtained.
  • the substrate is first cut through the first trench 2023 , and part of the substrate 201 is cut to form the second trench 2014 on the substrate 201 .
  • the second cutting is performed to partially cut the substrate, and the thickness of the cut substrate, that is, the depth of the second groove formed is about 1% of the thickness of the sidewall of the substrate (thickness along the cutting direction). /2 or so, preferably less than 1/2 of the thickness of the sidewall, so as to ensure the strength of the substrate itself while forming the second groove.
  • the second trench 2014 and the first trench 2023 are filled with an adhesive material to form a third adhesive layer 2053 and a second adhesive layer 2052 in sequence.
  • the second cutting is performed along the direction indicated by the arrow A22, and the second adhesive layer 2052, the third adhesive layer 2053 and the substrate 201 are cut in sequence until the substrate is cut through, and FIG. 25a is obtained.
  • the LED light-emitting device in the prior art and the LED light-emitting device including the adhesive material layers with different structures in the present invention were subjected to He gas leakage test, and the drawing of the present invention was selected. 1.
  • the LED light-emitting devices 100-1, 100-2 and 100-3 shown in FIG. 2b and FIG. 12a are used as test objects, wherein the adhesive material layer of the light-emitting device 100-1 only includes the non-functional area and the light-transmitting unit.
  • the adhesive material layer of the light emitting device 100-2 includes the above-mentioned first adhesive layer and the second adhesive layer located on the sidewall of the light-transmitting unit, and the adhesive material layer forms "L" type structure;
  • the adhesive material layer of the light-emitting device 100-3 includes the first adhesive layer, the second adhesive layer and the third material layer located on a part of the sidewall of the substrate, and the adhesive material layer forms a "T" shape structure.
  • the air tightness test results of the above light-emitting devices are shown in FIG. 29 . It can be seen from FIG. 29 that the light-emitting device 100-1 of the present application has a significantly reduced helium leak rate compared to the light-emitting device in the prior art.
  • the helium leak rate of the light-emitting devices in the technology is all above 9.0 ⁇ 10-9Pa ⁇ m2/s, while the helium leak rate of the light-emitting device 100-1 of the present application is significantly lower than 9.0 ⁇ 10-9Pa ⁇ m2/s, Most of them are concentrated at 6.0 ⁇ 10-9Pa ⁇ m2/s. It can be seen that, compared with the light-emitting device in the prior art, the light-emitting device 100-1 of the present application has significantly improved airtightness and thus significantly improved reliability.
  • the He gas leakage rates of the light-emitting device 100-2 and the light-emitting device 100-3 are all less than 3.5 ⁇ 10-9Pa ⁇ m2/s, and 80% of the light-emitting devices 100-2 have He gas leak rates less than 5.0 ⁇ 10-9Pa ⁇ m2/s. From the above, it can be seen that the airtightness of the light-emitting device having the adhesive material layer of the "L" type or the "T" type structure can be further improved, and the reliability can also be significantly improved.
  • a third adhesive layer 2053 is formed on the entire sidewall of the substrate to wrap the sidewall .
  • the adhesive material layer formed by the first adhesive layer 2051 , the second adhesive layer 2052 and the third adhesive layer 2053 forms a wrapping effect on the lens 202 and the substrate 201 , which can further improve the Airtightness of the device.
  • the difference between the manufacturing method of the LED light-emitting device shown in FIG. 25b and the manufacturing method shown in FIG. 25a is that it is basically placed on a jig capable of fixing the substrate, for example, the substrate can be adhered to an adhesive film superior.
  • the substrate is then cut and completely cut through the substrate to form a second trench that runs through the entire substrate.
  • a third adhesive layer covering the entire sidewall of the substrate as shown in FIG. 25b is formed in the second trench. Subsequent steps are the same as the steps of forming the LED light emitting device of FIG. 25a, and are not repeated here.
  • the present invention only illustrates that the third adhesive layer can be formed on the entire side wall of the substrate having the bowl with the LED lighting device shown in FIG. 25b. It can be understood that, in the LED light-emitting device shown in FIG. 17a and FIG. 17b, the third adhesive layer can also be formed on the entire sidewall of the substrate, which will not be described in detail here.
  • This embodiment also provides an LED light-emitting device, and the similarities with the eighth embodiment will not be repeated, but the differences are:
  • a step 207 is formed on the upper surface of the bracket side wall 2010 of the substrate 201 of the LED lighting device 200 - 5 , and the step 207 is formed on the bracket side wall 2010 near the cup (and the functional area) side.
  • the light-transmitting unit 202 is arranged on the step 207 .
  • the first adhesive layer 2051 of the adhesive material layer is located between the surface of the step 207 and the mounting seat 2021 of the light-transmitting unit, and the second adhesive layer 2052 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202 .
  • first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, and also form a structure similar to an "L" shape, forming a wrapping effect on the light-transmitting unit, thereby greatly improving the adhesion between the light-transmitting unit and the substrate robustness and airtightness of the device.
  • This embodiment also provides an LED light-emitting device, and the similarities with the tenth embodiment will not be repeated, but the differences are:
  • the second adhesive layer 2052 of the LED lighting device 200 - 6 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202 , and is also formed on the side wall of the bracket 2010 . part on the upper surface.
  • the above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, and also form a structure similar to the "Z" type.
  • This embodiment also provides an LED light-emitting device, and the similarities with the eleventh embodiment will not be repeated, but the differences are:
  • the second adhesive layer 2052 of the LED lighting device 200 - 7 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202 , and is also formed on the side wall of the bracket 2010 . All on the surface.
  • the above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, and also form a structure similar to the "Z" type.
  • the LED light-emitting device 200 of this embodiment In -7, the contact area between the second adhesive layer and the substrate 201 and the light-transmitting unit 202 is further increased, thereby further increasing the connection firmness of the substrate and the light-transmitting unit, and further improving the air tightness of the device.
  • This embodiment also provides an LED light-emitting device, and the same points with the twelfth embodiment will not be repeated, but the differences are:
  • the second adhesive layer 2052 of the LED lighting device 200 - 8 is located between the side wall of the step 207 and the side wall of the light-transmitting unit 202 , and is also formed on the side wall of the bracket 2010 .
  • the upper surface of the second adhesive layer 2052 is flush with the upper surface of the light-transmitting unit 202 .
  • the upper surface of the second adhesive layer is slightly higher than the upper surface of the light-transmitting unit 202, and the second adhesive layer is formed on the upper surface of the partially light-transmitting unit, specifically, formed on the upper surface of the mounting seat on the surface.
  • the above-mentioned first adhesive layer 2051 and second adhesive layer 2052 form a continuous structure, and also form a similar "Z"-shaped structure.
  • the LED light-emitting device 200 of this embodiment In -7 the upper surface of the second adhesive layer is flush with the upper surface of the light-transmitting unit, and wraps the entire sidewall of the light-transmitting unit; alternatively, the second adhesive layer can be formed on part of the upper surface of the light-transmitting unit , forming a package for the light-transmitting unit.
  • the LED light-emitting device of this embodiment further increases the contact area between the second adhesive layer and the substrate 201 and the light-transmitting unit 202 , thereby further increasing the connection firmness of the substrate and the light-transmitting unit, and further improving the air quality of the device. tightness.
  • the LED light-emitting device and the manufacturing method thereof provided by the present invention have at least the following beneficial technical effects:
  • the LED light-emitting device of the present invention comprises: a substrate, an LED chip arranged in a functional area of the substrate, a light-transmitting unit overlying the substrate and covering the LED chip, and an adhesive material layer connecting the substrate and the light-transmitting unit.
  • the sidewall of the LED light-emitting device of the present invention is flush as a whole, which is conducive to better positioning of the product in the tape vibration plate and better packaging yield.
  • the first part of the adhesive layer is uniformly and completely filled between the metal strip and the lens unit, without air bubbles or gaps, which can significantly increase the air tightness of the device.
  • the second part formed on at least part of the substrate outside the metal strip can further block water vapor and the like from entering the inside of the device, especially when the second part fills the gap between the substrate outside the metal strip and the light-transmitting unit, it can Further improve the air tightness of the device.
  • the adhesive material layer between the substrate and the light-transmitting unit includes: a first surface on the first surface of the substrate and above the substrate outside the functional area.
  • An adhesive layer, and a second adhesive layer located on the sidewall of the light-transmitting unit, the adhesive material layer forms a continuous structure in the LED lighting device.
  • the above-mentioned adhesive material forms a structure similar to "L" as a whole, and the adhesive material of this structure can fully bond the substrate and the light-transmitting unit, enhance the bonding force between the two, and improve the reliability of the product.
  • the adhesive material layer fully fills the gap between the substrate and the light-transmitting unit, and is also formed on the sidewall of the light-transmitting unit, which effectively improves the sealing between the substrate and the light-transmitting unit, and improves the air tightness of the product. and reliability.
  • the above-mentioned adhesive material layer in the light-emitting device of the present invention may further include a third adhesive layer formed on at least part of the sidewall of the substrate, for example, a step is formed on the sidewall of the substrate, and the third adhesive layer is formed on the surface and side walls of the step.
  • the layer of adhesive material including this third adhesive layer forms a continuous structure like a "T” or a "Z".
  • the structure forms a cladding structure between and around the substrate and the light-transmitting unit, which can further improve the air tightness and reliability of the product.
  • the above-mentioned adhesive material layer may also include a fourth adhesive layer formed on a part of the upper surface of the light-transmitting unit.
  • the fourth adhesive layer is formed on at least part of the upper surface of the mounting seat of the light-transmitting unit. , thereby further increasing the bonding area of the bonding material, increasing the bonding force between the light-transmitting unit and the substrate, and further enhancing the air tightness and reliability of the product.
  • the above-mentioned adhesive material layer preferably has one or more of the following characteristics: good adhesion, certain fluidity, and a certain reflection effect on the light emitted by the LED chip, for example, silica gel, white glue, fluororesin, etc. can be selected, In this way, the airtightness of the product can be improved, and the light extraction effect of the product can also be improved.
  • the manufacturing method of the light-emitting device of the present invention can adopt the method of covering the whole quartz glass plate including a plurality of light-transmitting units on the whole substrate, or use a plurality of independent light-transmitting units formed of quartz glass to be attached to the whole sheet way on the substrate.
  • the entire piece of quartz glass plate or the independent light-transmitting unit and the substrate are positioned through the corresponding positioning components on each fixture to ensure that the light-transmitting area of the light-transmitting unit coincides with the center of the LED chip on the substrate.
  • This process It can effectively improve the offset of the quartz glass plate or the light-transmitting unit, and avoid the offset of the central light-emitting angle of the LED chip; the mounting seat of the light-transmitting unit is aligned with the area outside the functional area coated with the first adhesive layer on the substrate, In a vacuum lamination device, the quartz glass and the first adhesive layer on the substrate are contacted and pressed to achieve close contact between the two. Further, a first groove can be formed between the light-transmitting units, and the first groove can be filled with adhesive material to fill the first groove to form a second adhesive layer. The adhesive layer is cut to obtain a light-emitting device, thereby forming a light-emitting device including an adhesive material layer of an "L"-like structure.
  • the method can ensure the airtightness and reliability of the light-emitting device, and the entire process can effectively improve the deflection of the quartz glass.
  • the above-mentioned manufacturing method while forming the above-mentioned first groove, part of the substrate is cut along the first groove, a second groove is formed on the first substrate, and the above-mentioned third adhesive layer is formed in the second groove.
  • the above-mentioned "T"-like adhesive material layer is formed, which further improves the airtightness and reliability of the device.

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Abstract

本发明提供一种LED发光装置及其制造方法，LED发光装置包括基板，设置在基板的功能区的LED芯片，覆盖在基板上方并覆盖LED芯片的透光单元以及连接基板与透光单元的粘结材料层。上述LED发光装置的侧壁整体上齐平，粘结层的第一部分均匀且完全填充在金属条带和透镜单元之间，无气泡或间隙，能够显著增加器件的气密性。另外，形成在金属条带外侧的至少部分基板上的第二部分能够进一步阻挡水汽等进入器件内部，尤其当第二部分填满金属条带外侧的基板和透光单元之间的空隙时，能够进一步提高器件的气密性。

Description

一种LED发光装置及其制造方法 技术领域
本发明涉及半导体器件领域，具体地，涉及一种LED发光装置及其制造方法。
背景技术
LED芯片因为其优良的性能得到快速发展。其中的紫外光LED特别是深紫外光LED的巨大的应用价值，尤其是在杀菌消毒方面的应用，引起了人们的高度关注，成为了新的研究热点。
随着深紫外LED的需求量越来越大，深紫外LED的结构也越来越多样化。目前通常采用基板加石英玻璃的封装形式。通过粘结剂将石英玻璃贴合至基板上，然后这样的封装形式面临着诸多问题。例如，由于基板和石英玻璃材质不同，通常会导致粘结剂的粘结性差，无法保证产品的气密性；其次，贴合过程中无法精确掌握粘结剂用量，粘结剂用量少，容易造成产品周围缺少粘结剂，粘结剂不能充分填充基板和石英玻璃之间的空隙，造成产品气密性问题；粘结剂用量多，或造成粘结剂进入产品的功能区，影响LED的发光效果；因为石英玻璃材质本身比较硬且比较脆，在生产作业中容易造成玻璃崩边和破损的情况，也会导致产品的气密性和可靠性降低。
基于LED封装，尤其是UV LED封装面临的诸多问题，急需能够解决发光装置出光率以及提高发光装置可靠性的方案。
发明内容
鉴于以上所述现有技术的缺点，本发明的目的在于提供一种LED发光装置及其制造方法，本发明的发光装置中，透光单元通过粘结材料连接至基板，并且本发明提供的发光装置的侧壁整体上是齐平的，有利于产品在编带震动盘内更好的摆好位置，更好地提升包装良率。
为实现上述目的及其它相关目的，本发明提供了一种LED发光装置，包括：
基板，所述基板具有相对设置的第一表面和第二表面，所述基板的第一表面上形成有功能区；
LED芯片，所述LED芯片固定在所述基板的第一表面的所述功能区；
透光单元，所述透光单元设置在所述基板的第一表面上方，并且覆盖所述LED芯片；
粘结材料层，连接所述基板与所述透光单元，所述粘结材料层位于所述功能区外侧的基板上方；
其中，在所述LED芯片的出光方向上，所述LED发光装置的侧壁整体齐平。
可选地，所述基板为平面基板，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成在所述功能区及所述功能区外侧的基板上，并且所述金属镀层在所述功能区外侧的基板上形成环绕所述功能区的金属条带，所述金属条带与所述功能区间隔分布。
可选地，所述基板为具有碗杯的支架，所述功能区形成在所述碗杯内侧，所述LED芯片位于所述碗杯中。
可选地，在所述LED芯片的出光方向上，所述粘结材料层的厚度介于35μm～150μm。
可选地，所述粘结材料层包括位于所述功能区外侧的所述金属条带上方的第一部分，以及位于所述金属条带外侧的至少部分基板上的第二部分。
可选地，在所述LED芯片的出光方向上，所述粘结材料层的所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
可选地，所述透光单元为平板结构，所述平板结构包括位于外围的安装座以及位于中间部分为透光区，所述透光单元通过所述安装座连接至所述支架的侧墙。
可选地，所述透光单元为透镜结构，所述透镜结构包括凸透镜以及形成在所述凸透镜周围的安装座，其中，
所述安装座与所述凸透镜之间形成空腔，所述透光单元通过所述安装座连接至所述基板；
所述LED芯片位于所述空腔中。
可选地，所述凸透镜为半球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
可选地，所述凸透镜为长轴方向上的半椭球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
可选地，所述透镜结构的最高点与最低的表面之间的垂直距离介于3.00～3.50mm，所述透镜结构的安装座高度介于0.3～0.7mm，所述凸透镜的最大宽度介于3.00～3.50mm。
可选地，所述透光单元为石英玻璃。
可选地，所述透光单元的中心与所述LED芯片的中心的偏移距离小于100μm。
可选地，在垂直于所述LED芯片的出光方向的方向上，所述透光单元与所述基板具有相同的宽度，所述透光单元的侧壁与所述基板的侧壁齐平。
可选地，所述粘结材料层包括位于所述基板上的第一粘结层以及位于所述透光单元的侧壁上的第二粘结层，所述粘结材料层的侧壁与所述基板的侧壁齐平。
可选地，所述粘结材料层包括位于所述基板上的第一粘结层，位于所述透光单元的侧壁上的第二粘结层，以及位于所述基板的至少部分侧壁上的第三粘结层，所述粘结材料层的侧壁与所述基板的侧壁齐平。
本发明还提供一种LED发光装置的制造方法，包括以下步骤：
提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；
提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
在所述基板上覆盖透光板，在所述功能区的外侧的基板上通过粘结材料层将所述透光板连接至所述基板，所述透光板覆盖所述LED芯片；
进行切割，对齐所述基板的切割区进行切割，直至将所述基板切穿，以形成所述发光装置。
可选地，所述基板为平面基板或者具有碗杯的支架，其中，
当所述基板为平面基板时，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成所述功能区以及所述功能区外侧的部分基板上的金属条带，所述金属条带环绕所述功能区并且与所述功能区间隔分布，相邻的所述金属条带之间形成凹槽；
当所述基板为具有碗杯的支架时，所述功能区形成在所述碗杯内侧，所述LED芯片位于所述碗杯中。
可选地，当所述基板为平面基板时，在所述基板上覆盖透光板还包括以下步骤：
提供包括多个透光单元的石英玻璃，每一个透光单元均包括位于所述透光单元四周的安装座以及位于所述安装座中间的透光区；
在所述凹槽中填充粘结材料；
将所述石英玻璃贴合至所述基板，使得部分所述粘结材料形成至所述金属条带上方，每一个透光单元的安装座通过所述第一粘结层连接至所述基板，所述石英玻璃的每一个透光单元的透光区与所述LED芯片一一对应。
可选地，当所述基板为平面基板时，所述透光单元形成为透镜结构，其中所述透光区为凸透镜；当所述基板为具有碗杯的支架时，所述透光单元形成为透镜结构或者平板结构，当所述透光单元为透镜结构时，所述透光区为凸 透镜。
可选地，所述粘结材料层的厚度介于35μm～150μm。
可选地，当所述基板为平面基板时，所述粘结材料层包括形成在所述金属条带上的第一部分以及形成在所述凹槽中的第二部分，所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
可选地，在进行切割之前，还包括：
进行第一次切割，对所述透光板进行切割，以在所述切割区上方形成第一沟槽；
在所述第一沟槽中形成粘结材料层的第二粘结层。
可选地，在进行切割之前，还包括：
进行第一次切割，对所述透光板及至少部分所述基板进行切割，以在所述切割区上方形成第一沟槽，并且在所述基板中形成第二沟槽，所述第二沟槽与所述第一沟槽连通；
在所述第二沟槽中形成所述粘结材料层的第三粘结层；
在所述第一沟槽中形成所述粘结材料层的第二粘结层。
本发明的另一实施例还提供了一种LED发光装置，包括：
基板，所述基板具有相对设置的第一表面和第二表面，所述基板的第一表面上形成有功能区；
LED芯片，所述LED芯片固定在所述基板的第一表面的所述功能区；
透光单元，所述透光单元设置在所述基板的第一表面上方，并且覆盖所述LED芯片；
粘结材料层，连接所述基板与所述透光单元，所述粘结材料层包括：位于所述基板的第一表面上的所述功能区之外的基板上方的第一粘结层，以及位于所述透光单元的侧壁上的第二粘结层，所述粘结材料层在所述LED发光装置中形成连续结构。
可选地，所述粘结材料层还包括形成在所述基板的至少部分侧壁上的第三粘结层。
可选地，所述基板为平面基板，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成在所述功能区及所述功能区的外侧的基板上，并且所述金属镀层在所述功能区外侧的基板上形成环绕所述功能区的金属条带，所述金属条带与所述功能区间隔分布。
可选地，所述基板为具有碗杯的支架，所述功能区形成在所述碗杯内侧所述LED芯片位于所述碗杯中。
可选地，所述基板在所述功能区的外侧的外围区域形成台阶，所述第三粘结层形成在所述台阶的表面及侧壁上。
可选地，在所述LED芯片的出光方向上，所述第一粘结层的厚度介于35μm～150μm。
可选地，在所述LED芯片的出光方向上，所述第二粘结层的厚度介于200μm～400μm。
可选地，所述第一粘结层包括位于所述功能区外侧的所述金属条带上方的第一部分，以及位于所述金属条带外侧的基板上的第二部分。
可选地，在所述LED芯片的出光方向上，所述第一粘结层的所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
可选地，当所述基板为平面基板时，在所述LED芯片的出光方向上，所述第三粘结层的厚度大于等于所述基板厚度的1/3，小于等于所述基板的厚度。
可选地，当所述基板为具有碗杯的支架时，在所述LED芯片的出光方向上，所述第三粘结层的厚度大于等于所述支架的侧墙处的厚度的1/2，小于等于所述支架的侧墙处的厚度。
可选地，所述透光单元为平板结构，所述平板结构包括位于外围的安装座以及位于中间部分为透光区，所述透光单元通过所述安装座连接至所述支架的侧墙。
可选地，所述碗杯支架的侧墙在靠近所述功能区的一侧形成有台阶，所述第一粘结层形成在所述台阶的表面上，所述第二粘结层形成在所述台阶的侧壁以及至少部分所述侧墙的上表面。
可选地，沿所述LED芯片的出光方向，所述第二粘结层的厚度大于所述透光单元厚度的1/2，小于等于所述透光单元的厚度。
可选地，所述透光单元为透镜结构，所述透镜结构包括凸透镜以及形成在所述凸透镜周围的安装座，其中，
所述安装座与所述凸透镜之间形成空腔，所述石英玻璃板通过所述安装座连接至所述基板；
所述LED芯片位于所述空腔中。
可选地，所述凸透镜为半球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
可选地，所述凸透镜为长轴方向上的半椭球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
可选地，所述透镜结构的最高点与最低的表面之间的垂直距离介于3.00～3.50mm，所述透镜结构的安装座高度介于0.3～0.7mm，所述凸透镜的最大宽度介于3.00～3.50mm。
可选地，所述透光单元为石英玻璃。
可选地，所述粘结材料层还包括第四粘结层，所述第四粘结层覆盖所述透光单元的部分上表面。
本发明的又一实施例提供了一种LED发光装置的制造方法，包括以下步骤：
提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；
提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
在所述基板上覆盖透光板，在所述功能区的外侧的基板上通过第一粘结层将所述透光板连接至所述基板，所述透光板覆盖所述LED芯片；
在所述切割区上方形成第一沟槽；
在所述第一沟槽中形成第二粘结层，所述第二粘结层与所述第一粘结层形成连续结构；
进行第二次切割，沿所述第二粘结层对齐所述基板的切割区对所述透光板及基板进行切割，直至将所述基板切穿，以形成所述发光装置。
可选地，所述凹槽的深度大于等于35μm。
可选地，所述基板为平面基板或者具有碗杯的支架，其中，
当所述基板为平面基板时，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成所述功能区以及所述功能区外侧的部分基板上的金属条带，所述金属条带环绕所述功能区并且与所述功能区间隔分布，相邻的所述金属条带之间形成凹槽；
当所述基板为具有碗杯的支架时，所述功能区形成在所述碗杯内侧，所述LED芯片位于所述碗杯中。
可选地，在所述基板上覆盖透光板还包括以下步骤：
提供包括多个透光单元的石英玻璃，每一个透光单元均包括位于所述透光单元四周的安装座以及位于所述安装座中间的透光区；
在所述功能区外侧的基板上方形成第一粘结层；
将所述石英玻璃贴合至所述基板，每一个透光单元的安装座通过所述第一粘结层连接至所述基板，所述石英玻璃的每一个透光单元的透光区与所述LED芯片一一对应。
可选地，在所述基板上覆盖透光板还包括以下步骤：
提供多个由石英玻璃形成的独立的透光单元，每一个透光单元均包括位于所述透光单元四周的安装座以及位于所述安装座中间的透光区；
在所述功能区外侧的基板上方形成第一粘结层；
将多个透光单元贴合至所述基板，每一个透光单元的安装座通过所述第一粘结层连接至所述基板，每一个透光单元的透光区与所述LED芯片一一对应，相邻的所述透光单元的安装座形成所述第一沟槽。
可选地，当所述基板为平面基板时，所述透光单元形成为透镜结构，其中所述透光区为凸透镜；当所述基板为具有碗杯的支架时，所述透光单元形成为透镜结构或者平板结构，当所述透光单元为透镜结构时，所述透光区为凸透镜。
可选地，当所述基板为平面基板时，所述第一粘结层包括形成在所述金属条带上的第一部分以及形成在所述凹槽中的第二部分，所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
可选地，在所述切割区上方形成第一沟槽包括：进行第一次切割，切割所述石英玻璃切穿以间隔相邻的透光单元，形成所述第一沟槽。
可选地，进行第一次切割还包括：间隔相邻的透光单元之后，继续切割至少部分所述基板以在所述基板中形成第二沟槽。
可选地，形成所述第一沟槽之后，还包括进行第一次切割，切割至少部分所述基板以在所述基板中形成第二沟槽。
可选地，所述制造方法还包括，在所述第二沟槽中形成第三粘结层。
可选地，在垂直于所述LED芯片的出光方向的方向上，所述第二次切割的切割宽度小于所述第一次切割的切割宽度。
可选地，当所述基板为平面基板时，沿所述LED芯片的出光方向，所述第三粘结层的厚度大于等于所述基板厚度的1/3，小于等于所述基板的厚度。
可选地，当所述基板为具有碗杯的支架时，沿所述LED芯片的出光方向，所述第三粘结层的厚度大于等于所述支架的侧墙处的厚度的1/2，小于等于所述支架的侧墙处的厚度。
可选地，当所述基板为具有碗杯的支架时，还包括：
在所述支架的侧墙靠近所述功能区的一侧形成台阶；
在所述台阶的表面上形成所述第一粘结层；
在所述台阶的侧壁以及至少部分所述侧墙的上表面形成所述第二粘结层。
可选地，在所述透光单元的部分上表面上形成第四粘结层，所述第四粘结层与所述第二粘结层形成连续结构。
本发明的一实施例还提供了一种LED发光装置，包括：
基板，所述基板具有相对设置的第一表面和第二表面，所述基板的第一表面上形成有功能区及条带结构，所述条带结构位于在所述功能区的外围环绕所述功能区，并且与所述功能区相互间隔，所述条带结构高于所述基板的第一表面；
LED芯片，所述LED芯片固定在所述基板的第一表面的所述功能区；
透光单元，所述透光单元设置在所述基板的第一表面上方，并且覆盖所述LED芯片；
粘结材料层，连接所述基板与所述透光单元，所述粘结材料层位于所述条带结构的上方。
可选地，所述基板为平面基板，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形 成所述功能区及所述条带结构。
可选地，在所述LED芯片的出光方向上，所述粘结材料层的厚度介于35μm～150μm。
可选地，所述粘结材料层还形成在所述金属条带外侧的至少部分基板上，位于所述条带结构上方的粘结材料层为第一部分，所述金属条带外侧的至少部分基板上的粘结材料层为第二部分。
可选地，在所述LED芯片的出光方向上，所述粘结材料层的所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
可选地，所述透光单元为透镜结构，所述透镜结构包括凸透镜以及形成在所述凸透镜周围的安装座，其中，
所述安装座与所述凸透镜之间形成空腔，所述石英玻璃板通过所述安装座连接至所述基板；
所述LED芯片位于所述空腔中。
可选地，所述LED芯片的厚度介于200μm～750μm。
可选地，所述透光单元的所述空腔的深度介于100μm～900μm，所述内腔的内壁与LED芯片顶部之间的间距基于10μm～100μm。
可选地，所述条带结构的高度介于35μm～100μm。
可选地，所述凸透镜为半球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
可选地，所述凸透镜为长轴方向上的半椭球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
可选地，所述透镜结构的最高点与最低的表面之间的垂直距离介于3.00～3.50mm，所述透镜结构的安装座高度介于0.3～0.7mm，所述凸透镜的最大宽度介于3.00～3.50mm。
可选地，所述透光单元为石英玻璃。
本发明的另一实施例还提供了一种LED发光装置的制造方法，包括以下步骤：
提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区及条带结构，所述条带结构位于在所述功能区的外围环绕所述功能区，并且与所述功能区相互间隔，相邻条带结构之间形成切割区；
提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
在所述基板上覆盖透光板，在所述功能区的外侧的基板上通过粘结材料层将所述透光板连接至所述基板，所述透光板覆盖所述LED芯片；
进行切割，对齐所述基板的切割区进行切割，直至将所述基板切穿，以形成所述发光装置。
可选地，所述基板为平面基板，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成所述功能区以及所述条带结构，相邻的所述条带结构之间形成凹槽。
可选地，在所述基板上覆盖透光板还包括以下步骤：
提供包括多个透光单元的石英玻璃，每一个透光单元均包括位于所述透光单元四周的安装座以及位于所述安装座中间的透光区；
在所述凹槽中填充粘结材料；
将所述石英玻璃贴合至所述基板，使得部分所述粘结材料形成至所述条带结构上方以形成所述粘结材料层的第一部分，保留在所述凹槽中的粘结材料层形成第二部分，每一个透光单元的安装座通过所述粘结材料连接至所述基板，所述石英玻璃的每一个透光单元的透光区与所述LED芯片一一对应。
可选地，在所述基板上覆盖透光板还包括以下步骤：
提供多个由石英玻璃形成的独立的透光单元，每一个透光单元均包括位于所述透光单元四周的安装座以及位于所述安装座中间的透光区；
在所述凹槽中填充粘结材料；
将多个透光单元贴合至所述基板，使得部分所述粘结材料形成至所述条带结构上方以形成所述粘结材料层的第一部分，保留在所述凹槽中的粘结材料层形成第二部分，每一个透光单元的安装座通过所述粘结材料连接至所述基板，并且每一个透光单元的透光区与所述LED芯片一一对应。
可选地，所述透光单元形成为透镜结构，其中所述透光区为凸透镜，所述安装座与所述凸透镜之间形成空腔，所述石英玻璃板通过所述安装座连接至所述基板，所述LED芯片位于所述空腔中。
可选地，所述粘结材料层的厚度介于35μm～150μm。
可选地，所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
可选地，所述透光单元的所述空腔的深度介于100μm～900μm，所述内腔的内壁与LED芯片顶部之间的间距基于10μm～100μm。
可选地，所述条带结构的高度介于35μm～100μm。
如上所述，本发明提供的LED发光装置及其制造方法，至少具备如下有益技术效果：
本发明的LED发光装置包括：基板，设置在基板的功能区的LED芯片，覆盖在基板上方并覆盖LED芯片的透光单元以及连接所述基板与所述透光单元的粘结材料层。在所述LED芯片的出光方向上，本发明的LED发光装置的侧壁整体上齐平，有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。粘结层的第一部分均匀且完全填充在金属条带和透镜单元之间，无气泡或间隙，能够显著增加器件的气密性。另外，形成在金属条带外侧的至少部分基板上的第二部分能够进一步阻挡水汽等进入器件内部，尤其当第二部分填满金属条带外侧的基板和透光单元之间的空隙时，能够进一步提高器件的气密性。
本发明的另一实施例中的LED发光装置中，基板和透光单元之间的所述粘结材料层包括：位于所述基板的第一表面上的所述功能区外侧的基板上方的第一粘结层，以及位于所述透光单元的侧壁上的第二粘结层，所述粘结材料层在所述LED发光装置中形成连续结构。上述粘结材料整体形成类似“L”型的结构，这一结构的粘结材料能能够充分粘结基板和透光单元，增强二者之间的结合力，提高产品的可靠性。同时粘结材料层充分填充基板和透光单元之间的空隙，同时还形成在在透光单元的侧壁上，有效提高基板和透光单元之间的密封性，挺高产品的气密性及可靠性。
另外，本发明的发光装置中的上述粘结材料层还可以包括形成在基板的至少部分侧壁上的第三粘结层，例如，在基板侧壁上形成台阶，该第三粘结层形成在该台阶的表面及侧壁上。包括该第三粘结层的粘结材料层形成类似“T”或者“Z”型的连续结构。该结构在基板、透光单元之间及二者周围形成包覆结构，能够进一步提高产品的气密性及可靠性。
进一步地，上述粘结材料层还可以包括形成在透光单元的部分上表面的第四粘结层，具体的，该第四粘结层形成在透光单元的安装座的至少部分上表面上，由此进一步增大粘结材料的粘结面积，增大透光单元与基板的结合力，进一步增强产品的气密性及可靠性。
上述粘结材料层优选具有下面一个或者多个特性：粘结性较好、有一定的流动性、对LED芯片发出的光具有一定的反射作用，例如可以选择硅胶、白胶、氟树脂等，由此能够在提高产品气密性的同时，也能够提高产品的出光效果。
本发明的发光装置的制造方法，可以采用整片基板上覆盖包含多个透光单元的整片石英玻璃板的方式，或者采 用石英玻璃形成的多个独立的透光单元贴合至在整片基板上的方式。首先将整片石英玻璃板或独立的透光单元和基板通过各自治具上对应的定位部件实现二者的定位，保证透光单元的透光区与基板上的LED芯片的中心重合，该过程可以有效改善石英玻璃板或透光单元的偏移，避免LED芯片的中心发光角的偏移；透光单元的安装座与基板上涂覆有第一粘结层的功能区外侧的区域对齐，在有抽真空的层压设备中使石英玻璃与基板上的第一粘结层接触并挤压实现二者的紧密贴合。进一步地，可以在透光单元之间形成第一沟槽，在第一沟槽中填充粘结材料，使其充满第一沟槽形成第二粘结层，经烘烤固化后，沿第三粘结层切割，得到发光装置，由此形成包括类似“L”型结构的粘结材料层的发光装置。该方法可以保证发光装置的气密性及可靠性，并且整个过程能够有效改善石英玻璃的偏移。上述制造方法在形成上述第一沟槽的同时，沿第一沟槽切割部分基板，第基板上形成第二沟槽，在第二沟槽中形成上述第三粘结层。由此形成上述类似“T”型的粘结材料层，进一步提高装置的气密性及可靠性。
本发明中，上述基板可以是平面基板也可以是带有碗杯的支架基板，透光单元可以是透镜结构也可以是平板结构。本发明的发光装置制造方法方式多变，适用性强，可以制造多种形式的发光装置，同时能够保证器件的良好的气密性和可靠性。
附图说明
图1a显示为本发明实施例一提供的LED发光装置的示意图。
图1b显示为图1中所示的LED发光装置的制造方法流程图。
图1c显示为图1b所示方法中提供的基板的结构示意图。
图1d显示为图1c所示基板的俯视示意图。
图1e显示为在图d所示的基板上涂覆粘结材料的结构示意图。
图1f显示为将图1e所示的基板置于的第一治具中的结构示意图。
图1g显示为将石英玻璃置于第二治具中的示意图。
图1h显示为将第二治具放置于第一治具上的示意图。
图1i显示为将石英玻璃贴合至基板的示意图。
图1j显示为粘结材料形成至金属条带上的结构示意图。
图1k显示为在基板上覆盖石英玻璃后的结构示意图。
图2a显示为本发明实施例二提供的LED发光装置的示意图。
图2b显示为本发明实施例二的一可选实施例提供的LED发光装置的示意图。
图2c显示为本发明实施例二的一可选实施例提供的LED发光装置的示意图。
图3显示为图2a和图2b所示的LED发光装置的出光角的示意图。
图4a显示为实施例一和二的可选实施例提供的LED发光装置的示意图。
图4b显示为图4a所示的LED发光装置的出光角的示意图。
图5显示为本发明实施例二提供的LED发光装置的制造方法的流程示意图。
图6a显示为图5所述的提供基板并在基板上固定LED芯片之后的结构示意图。
图6b和图6c显示为LED芯片在基板上的不同排布方式的示意图。
[根据细则91更正 15.07.2021]　
图7a显示为在图6a所示的基板上形成第一粘结层的结构示意图。
[根据细则91更正 15.07.2021]　
图7b显示为另一可选实施例中在图6a所示的基板上形成第一粘结层的结构示意图。
[根据细则91更正 15.07.2021]　
图8a显示为将图7a所示的基板置于的第一治具中的结构示意图。
图8b显示为将石英玻璃置于第二治具中的示意图。
图8c显示为将第二治具放置于第一治具上的示意图。
图8d显示为将石英玻璃贴合至基板的示意图。
图8e显示为在基板上覆盖石英玻璃后的结构示意图。
图9显示为在图8e所示的石英玻璃的相邻透光单元之间形成第一沟槽的结构示意图。
图10显示为在图9所示的第一沟槽中形成第二粘结层的结构示意图。
图11a显示为实施例二的另一可选实施例中形成第一沟槽的结构示意图。
图11b显示为固定图11a所示的基板的第一治具的结构示意图。
图11c显示为固定图11a所示的多个透光单元的第二治具的结构示意图。
图12a显示为本发明实施例三提供的LED发光装置的结构示意图。
图12b显示为实施例三的一可选实施例中LED发光装置的结构示意图。
图12c显示为实施例三的另一可选实施例中LED发光装置的结构示意图。
图13显示为实施例三提供的LED发光装置的制造方法中形成第二沟槽的结构示意图。
图14显示为在图13所示的结构中形成第二及第三粘结层的结构示意图。
图15显示为实施例三的另一可选实施例中形成第二沟槽的结构示意图。
图16a显示为本发明实施例四提供的LED发光装置的结构示意图。
图16b显示为本发明实施例五提供的LED发光装置的结构示意图。
图17a显示为本发明实施例六提供的LED发光装置的结构示意图。
图17b显示为本发明实施例七提供的LED发光装置的结构示意图。
图18a示为本发明实施例八提供的LED发光装置的结构示意图。
图18b显示为本发明实施例八的一可选实施例提供的LED发光装置的结构示意图。
图19显示为实施例八的LED发光装置的制造方法中提供的基板及在基板上固定LED芯片的结构示意图。
图20显示为在图19所示的基板上形成第一粘结层的结构示意图。
图21显示为在图20所示的基板上覆盖石英玻璃的结构示意图。
图22显示为在图21所示的结构中形成第一沟槽的结构示意图。
图23显示为在图22所示的结构中形成第二粘结层的结构示意图。
图24显示为实施例八的一可选实施例中形成第一沟槽的结构示意图。
图25a显示为本发明实施例九提供的LED发光装置的结构示意图。
图25b显示为实施例九的一可选实施例提供的LED发光装置的结构示意图。
图26显示为实施例九的LED发光装置的制造方法中形成第二沟槽的结构示意图。
图27显示为在图26所示的结构中形成第二及第三粘结层的结构示意图。
图28显示为实施例九的一可选实施例中形成第二沟槽的结构示意图。
图29显示为图1、图2b及图12a所示的LED发光装置的He气泄漏对比图。
图30显示为本发明实施例十提供的LED发光装置的结构示意图。
图31显示为本发明实施例十一提供的LED发光装置的结构示意图。
图32显示为本发明实施例十二提供的LED发光装置的结构示意图。
图33显示为本发明实施例十三提供的LED发光装置的结构示意图。
[根据细则91更正 15.07.2021]　
附图标记:100-1：LED发光装置；101：基板；1011：功能区；1012：非功能区；1012-1：金属条带；1013：电极焊盘；1014：第二沟槽；1015：第一治具；1016：定位弹簧；1017：基板侧壁上的台阶；1018′：非功能区的外围区域；1018：切割区；102：透光单元；1020：石英玻璃；1021：安装座；1022：透光区；1023：第一沟槽；1024：第二治具；1025：定位孔；103：LED芯片；104：透镜结构形成的空腔；1051：第一粘结层；1052：第二粘结层；1053：第三粘结层；1054：第四粘结层；106：凹槽；100-2，100-2′，100-2′′，100-3，100-4，200-1，200-1′，200-2，200-2′，200-3，200-4，200-4′，200-5，200-6，200-7，200-8：LED发光装置；201：基板；2011：功能区；2012：非功能区；2013：电极焊盘；2014：第二沟槽；2015：第一治具；2016：定位弹簧；2017：基板侧壁上的台阶；2018′：非功能区的外围区域；2018：切割区；202：透光单元；2020：石英玻璃；2021：安装座；2022：透光区；2023：第一沟槽；2024：第二治具；2025：定位孔；203：LED芯片；204：透镜结构形成的空腔；2051：第一粘结层；2052：第二粘结层；2053：第三粘结层；2054：第四粘结层；206：凹槽；207：台阶。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式，本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其它优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用，本说明书中的各项细节也可以基于不同观点与应用，在没有背离本发明的精神下进行各种修饰或改变。
需要说明的是，本实施例中所提供的图示仅以示意方式说明本发明的基本构想，虽图示中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制，其实际实施时各组件的形态、数量、位置关系及比例可在实现本方技术方案的前提下随意改变，且其组件布局形态也可能更为复杂。
实施例一
本实施例提供一种LED发光装置，如图1a所示，本实施例的LED发光装置100-1包括基板101，设置在基板上的LED芯片103以及覆盖LED芯片并连接至基板的透光单元102，连接基板101及透光单元102的粘结材料层1051。
本实施例中，基板101可以是陶瓷基板、印刷电路板等任意适合的基板。本实施例以平面陶瓷基板为例进行说明。该基板101包括相对设置的第一表面和第二表面，如图1a所示，基板101第一表面上设置有功能区1011，第二表面设置有连通功能区1011的电极焊盘1013。功能区1011形成为用于固定LED芯片的固晶区，LED芯片103设置在功能区1011，例如可以通过金线连接或者直接焊接至功能区。在可选实施例中，上述功能区由形成在基板101的第一表面上的金属镀层形成，金属镀层在功能区形成分别连接LED芯片的电极的正负电极区，电极焊盘1013将设置在功能区的LED芯片的电极引出。透光单元102包括安装座1021及透光区1022，安装座和透光区之间形成有空腔104，LED芯片103位于该空腔104中。透光单元通过位于功能区外侧的基板上方的粘结材料层1051连接至基板101。在本发明中，为了便于描述，将上述非功能区的外侧区域定义为非功能区1012，该定义仅用于解释说明本发明，不能理解为对本发明的限定。
LED芯片103可以是任意类型的LED芯片，例如，可以是波长小于400nm，尤其是波长介于220nm～385nm之间的紫外或深紫外LED芯片，本实施例中，以波长介于220nm～385nm之间的紫外LED芯片为例。该紫外LED芯片的厚度介于200μm～750μm，优选地，大约为250～500μm，例如可以为450μm。虽然未详细示出，但是可以理解的是，LED芯片103可以包括衬底，形成在衬底表面的半导体层，该半导体层包括可以依次形成在衬底表面的第一半导体层、有源层以及第二半导体层，LED芯片103还包括分别与上述第一、第二半导体层连接的电极结构，LED芯片103的电极结构连接至基板的功能区1011，例如可以通过焊接、共晶等方式连接，由此实现LED芯片103 的固定。LED芯片的电极结构通过基板背面的电极焊盘1013引出。
在紫外LED芯片中，上述衬底可以选择蓝宝石衬底，第一半导体层可以为N型A1GaN层，在该N型A1GaN层和蓝宝石衬底之间还可以形成有AlN缓冲层和A1N/A1GaN超晶格层，以降低N型A1GaN层与蓝宝石衬底的晶格失配率。有源层为AlGaN多量子阱层，所述AlGaN多量子阱层设置于所述N型AlGaN层远离所述衬底的一侧；所述第二半导体层为P型A1GaN层，所述P型AlGaN层设置于所述AlGaN量子阱层远离所述衬底的一侧。
同样参照图1a，该透光单元102包括安装座1021及透光区1022，在本实施例中，透光单元102为石英玻璃形成的透镜结构，透光区形成凸透镜，安装座位于凸透镜的下方。安装座连接至基板的非功能区1012，透光区位于LED上方。安装座和透光区之间形成有空腔104，LED芯片103位于该空腔104中，该空腔的深度大约为100～900μm。可以理解的是，虽然在本实施例中未图示，但是空腔104中还可以形成有反射层、封装胶或者含有荧光粉的封装胶等结构。为了提高LED发光装置的出光效果，优选地，LED芯片的中心线与透光区(凸透镜)1022的中心线重合。
同样参照图1a，基板101的非功能区1012同样形成有金属镀层，非功能区的金属镀层形成为环绕功能区的金属条带1012-1，并且该金属条带1012-1与功能区间隔分布。形成功能区和非功能区的金属条带的金属镀层可以是相同的金属材料也可以是不同的金属材料。采用相同的金属材料时，可以同时形成功能区和非功能区的金属镀层。该金属镀层的厚度介于30～100μm之间，优选在50μm左右。由于金属镀层具有上述厚度，因此基板101在相邻的金属条带之间形成凹槽106(可参见附图1d)。如图1a所示，粘结层1051包括位于非功能区的金属条带上方的第一部分1051-1以及位于金属条带1012-1外侧的至少部分基板上的第二部分1051-2。图1a示出了LED发光装置中，粘结层的第二部分1051-2形成在金属条带1012-1外侧的部分基板上，可以理解的是，第二部分1051-2可以形成在金属条带1012-1外侧的全部基板上，并且填满透光单元的安装座与金属条带的外侧的基板之间的间隙。
由于上述金属条带的存在，在透光单元通过粘结材料粘附到基板上时，增加了透光单元与基板之间的间距，相应地增加了透光单元的内腔104的内壁与LED芯片顶部之间间距，由此可以保证LED芯片不会被透光单元挤压，保护LED芯片不受损伤。另外，可以通过调整金属条带的高度来调整LED芯片顶部与透光单元内腔104的内壁之间的间距，使该间距小于100μm，优选地，使的该间距大于为10μm，由此在保证LED芯片不被挤压的前提下，保证LED芯片的出光效果。
本实施例以形成金属条带为例进行说明，可以理解的是，任意能够实现增加透光单元与基板之间距离并且不影响LED芯片光电性能的材料均可用于形成该条带结构。例如，可以是沉积形成的氧化硅、氧化铝等绝缘材料形成的条带结构。
在LED发光装置的出光方向上，即在图1a的箭头O所示的方向上，粘结层1051的厚度介于35μm～150μm。其中，第一部分1051-1的厚度介于35μm～50μm，第二部分1051-2的厚度介于50μm～150μm。
上述粘结层1051例如可以选择硅胶、白胶、氟树脂等，优选具有下面一个或者多个特性：粘结性较好、有一定的流动性、对LED芯片发出的光具有一定的反射作用的材料，由此能够在提高产品气密性的同时，也能够提高产品的使用寿命。
仍然参照图1a，本实施例中上述透光单元102形成透镜结构，其中透光区1022的凸透镜形成为半球型凸透镜。该半球形凸透镜的球直径介于2.00mm-3.50mm，优选3.20mm，整个透光单元的高度介于1.50mm-2.30mm，优选为2.10mm。在该凸透镜的作用下，如图3所示，LED发光装置的出光角在60°左右。LED发光装置的出光角度还可以通过调整安装座和透光区之间的空腔104中的填充材料来调节。例如，当LED芯片周围无任何填充材料，即腔体104内为空气或氮气时，LED发光装置的出光角在55°～80°之间；如果LED芯片周围，即空腔104中填充有无机胶等反射材料时，LED发光装置100-2的出光角在80°～120°之间。
参照图4a，在本实施例的另一可选实施例中，透光单元同样形成为透镜结构，包括安装座1021和透光区1022，不同的是，透光区形成为半椭球型，并且为长轴方向上的半椭球型。具有该半椭球型透光区的透光单元的高度(即透镜结构的最高点与最低的表面之间的垂直距离)H1约为3.00～3.50mm，安装座高度H2介于0.30～0.70mm，所述凸透镜的最大宽度W介于2.00～3.50mm。如图4b所示，具有该半椭球型透光区的透光单元的发光装置的出光角在35°左右。同样可以通过调整安装座和透光区之间的空腔104中的填充材料来调节具有半椭球型透光单元的发光装置的出光角。例如，当LED芯片周围无任何填充材料，即空腔104内为空气或氮气时，发光装置的出光角约为25°～55°；如果LED芯片周围，即空腔104中填充有无机胶等反射材料时，发光装置的出光角在55°～75°之间。
实际应用中，可以根据出光角的要求选择任意透光单元。本实施例中，上述透光单元为石英玻璃透镜，也可以是塑料透镜等。
如图1a所示，本实施例的发光装置100-1的基板的侧壁与透镜的侧壁是齐平的，有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。粘结层1051的第一部分1051-1均匀且完全填充在金属条带和透镜单元之间，无气泡或间隙，能够显著增加器件的气密性。另外，形成在金属条带外侧的至少部分基板上的第二部分1051-2能够进一步阻挡水汽等进入器件内部，尤其当第二部分填满金属条带外侧的基板和透光单元之间的空隙时，能够进一步提高器件的气密性。
本实施例还同时提供了发光装置的制造方法，如图1b所示，该制造方法包括以下步骤：
S101：提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；
S102：提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
参照图1c和图1d，首先提供基板101，该基板可以是陶瓷基板、印刷电路板等任意适合的基板。本实施例以平面陶瓷基板为例进行说明。该基板101包括相对设置的第一表面和第二表面，在第一表面上形成功能区1011，第二表面设置有连通功能区1011的电极焊盘1013(可参照图1a)。功能区1011形成为用于固定LED芯片的固晶区，相邻的功能区之间形成切割区1018。在本实施例中，将功能区1011之外的区域定义为非功能区1012。
在本实施例的可选实施例中，还包括在所述功能区的外侧的基板上形成环绕所述功能区的金属条带1012-1，所述金属条带与所述功能区间隔分布。如图1c和图1d所示，非功能区1012同样形成有金属镀层，具体地，非功能区的金属镀层形成在切割区之外的区域，并且金属镀层在非功能区形成为环绕功能区的金属条带1012-1，金属条带与功能区相互间隔。可以通过在基板101的第一表面形成金属镀层的方式形成上述功能区以及非功能区的金属条带。例如可以通过刻蚀、沉积等工艺在基板101的第一表面上形成上述金属镀层。该金属镀层的厚度介于30μm至100μm之间，优选在50μm左右，由于金属镀层具有上述厚度，因此，如图1c所示，基板101在切割区1018形成凹槽106。
在基板101上形成上述功能区和非功能区中的金属条带之后，提供LED芯片103，该LED芯片可以是任意类型的LED芯片，例如，可以是波长小于400nm，尤其是波长介于220nm～385nm之间的紫外或深紫外LED芯片，本实施例中，以波长介于220nm～385nm之间的紫外LED芯片为例。将LED芯片103固定至基板101的功能区1011上。例如可以通过打线、键合、焊接等多种工艺实现LED芯片的固定。如图1d所示，本实施例以倒装LED为例，将LED芯片键合至功能区1011。LED芯片的电极结构通过与功能区1011连通的位于基板第二表面的电极焊盘1013引出。
LED芯片固定到基板上，可以有不同的排布方式。参照图6b和图6c，可以采用图6b所示的LED芯片与基板边对边的形式排布，LED芯片的侧边与基板的侧边平行，二者基本呈相互平行状态。还可以采用图6c所示的LED芯片与基板角对边的形式排布，LED芯片的四个角与基板的四个侧壁分别相对。尤其在LED芯片尺寸比较大的时 候，采用图6c所示的排布方式，能够充分利用基板空间，提高基板利用率。在实际应用中，可以根据LED芯片的尺寸以及基板的尺寸，灵活选用LED的排布方式。
S103：在所述基板上覆盖透光板，在所述功能区的外侧的基板上通过粘结材料层将所述透光板连接至所述基板，所述透光板覆盖所述LED芯片。
在基板101上固定好LED芯片103之后，在基板上覆盖透光板，实现对LED芯片的封装。在本实施例中，上述透光板以石英玻璃为例。如图1e所示，首先在非功能区的金属条带之间的凹槽106中填充粘结材料。优选地，填充在凹槽106中的粘结材料的厚度大于形成功能区和非功能区的金属镀层的厚度。在一优选实施例中，粘结材料高出金属镀层大约50μm～200μm。该粘结材料可以是硅胶、白胶或者氟树脂等粘结材料。然后将石英玻璃覆盖在基板上。本实施例中，该石英玻璃为具有多个透光单元的整片石英玻璃，其中透光单元为图1a所示的透镜结构。然后按照图1f～图1j所示的过程完成覆盖石英玻璃的过程：
首先，如图1f所示，将图1d所示形成了粘结材料、固定有LED芯片的基板101置于第一治具1015中，该第一治具1015具有容纳基板101的卡槽(未具体图示)，将基板101放置在该卡槽中，实现基板的固定。同样参照图1f，该第一治具1015的侧壁顶端具有定位部件，例如，在本实施例中该定位部件为定位弹簧1016，定位弹簧的数量至少为两个，可以根据实际需要设置所需数量的定位部件。当然也可以是其他能够实现定位及分离的任意定位部件。
然后如图1g所示，将石英玻璃放置在第二治具1024中。如图1g所示，在本实施例中，石英玻璃为包括多个透光单元102的整片石英玻璃1020，透光单元1020包括透光区1022以及位于透光区外围的安装座1021。第二治具1024具有容纳石英玻璃1020的腔室，为了容纳并固定石英玻璃1020，在第二治具1024的腔室内壁上贴附一层热解胶膜，然后将整片石英玻璃1020放在该热解胶膜上，以将石英玻璃容纳并固定在第二治具1024中。同样如图1g所示，第二治具1024的侧壁的顶端同样具有定位部件1025，该定位部件1025与第一治具1015的定位部件1016相互配合。例如当第一治具的定位部件为定位弹簧1016时，第二治具的该定位可以是定位孔1025。第一治具和第二治具的定位部件可以互换，以能够实现定位和分离为准。
之后，如图1h所示，将固定有石英玻璃1020的第二治具翻转，使得石英玻璃面向基板101。通过定位弹簧1016和定位孔1025实现第一治具和第二治具的定位。通过该定位实现每一个透光单元与基板上的LED芯片对齐，优选地，使二者的中心线重合。如图1h所示，此时，定位弹簧1016与定位孔1025接触，而石英玻璃1020与基板101并未接触。
然后，将定位好的第一治具和第二治具整体放入可以抽真空的层压设备中，如图1i所示，在层压的过程中石英玻璃首先与基板上的第一粘结层1051接触。由于透光单元的安装座1021和透光区(凸透镜)1022之间形成空腔104(参照图1a)，透光区的安装座1021首先与基板上的第一粘结层接触，而LED芯片则容纳在该空腔104中，不会与透光区接触或者被透光区挤压，由此保证LED芯片的性能。在层压以及抽真空的过程中，由于凹槽中填充的粘结材料的高度高于金属条带的高度，因此凹槽内的粘结材料被挤压向周围的金属条带上流动，如图1j所示，凹槽中的粘结材料量变少，金属条带上的粘结材料慢慢变多。在抽真空的作用下，可以使粘结材料继续向金属条带的位置流动，直至补足金属条带边侧缺少粘结材料的位置，覆盖整个金属条带形成粘结层1051的第一部分1051-1，由此实现石英玻璃与基板的紧密结合。凹槽内剩余的粘结材料形成粘结层1051的第二部分1051-2，该第二部分与金属条带上的第一部分形成连续结构，进一步增强基板和石英玻璃的结合力，增强器件的气密性。在层压及抽真空过程中，对粘结层进行加热烘烤，在加热过程中促进其流动，烘烤过程实现其固化。同时在加热过程中贴合在第二治具的腔室内壁上的热解胶膜会分解失去粘结作用，实现石英玻璃与第二治具分离。
如图1j所示，凹槽中的粘结材料流向金属条带，凹槽内的粘结材料变少未填满凹槽。在可选实施例中，可以通过调整凹槽中填充的粘结材料的量使得层压抽真空之后，金属条带上均匀覆盖粘结材料，凹槽内仍然填满粘结材料。这样能够进一步提高器件的气密性。
之后，如图1k所示，去除第一治具和第二治具。例如，首先去掉抽真空，此时在定位弹簧1016的恢复力作用下，第一治具和第二治具实现初步分离，然后将第二治具以及第一治具分离出来，得到图1k所示的覆盖有石英玻璃1020的结构。本实施例，经上述方法覆盖石英玻璃，凹槽内的粘结材料自凹槽流向非功能区的金属镀层上，不会流向功能区，不会对功能区造成污染。同时可以保证透镜中心位置与芯片中心位置偏移小于100μm，中心发光角度左右偏移小于±3°。
S104：进行切割，对齐所述基板的切割区进行切割，直至将所述基板切穿，以形成所述发光装置。
如图1k所示，对齐基板101的切割区1018沿箭头A1所示的方向进行切割，得到图1a所示的LED发光装置。本实施例中在基板上覆盖包括多个透光单元的整片石英玻璃，通过切割获得LED发光装置，这样可以保证得到的发光装置的侧壁是齐平的，即在垂直于所述LED芯片的出光方向的方向上，所述透光单元与所述基板具有相同的宽度，透光单元的侧壁和基板的侧壁齐平。这样的结构有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。
实施例二
本实施例提供一种LED发光装置，如图2a所示，该LED发光装置100-2′包括基板101，设置在基板第一表面上的LED芯片103，覆盖在LED芯片103设置在基板101上的透光单元102，连接基板101及透光单元102的粘结材料层。
本实施例中，基板101、LED芯片103以及透光单元102均与实施例一中基板、LED芯片和透光单元相同，在此不再赘述，不同之处在于：
如图2a所示，本实施例中，粘结材料层包括位于非功能区1011和安装座之间的第一粘结层1051以及位于安装座侧壁上的第二粘结层1052。在一优选实施例中，位于LED发光装置的同一侧壁上的上述第一粘结层1051和第二粘结层1052形成连续结构，如图2a所示，形成类似“L”型的结构。在LED发光装置的出光方向上，即图2a的箭头O所示的方向上，第一粘结层1051的厚度t1介于50μm～150μm，第二粘结层的厚度t2介于200μm～400μm。
在本实施例的另一可选实施例中，如图2b所示，LED发光装置100-2的基板101的非功能区1012同样形成有金属镀层，具体地，非功能区的金属镀层形成在切割区域1018′之外的区域。可以同时形成功能区和非功能区的金属镀层，功能区1011和非功能区1012的金属镀层相互间隔分布。该金属镀层的厚度介于30～100μm之间，优选在50μm左右。由于金属镀层具有上述厚度，因此基板101在相邻的非功能区之间形成凹槽106(可参见附图6a)。如图2b所示，此时，第一粘结层1051包括位于非功能区的金属镀层上方的第一部分1051-1以及位于外围区域的第二部分1051-2。在LED发光装置的出光方向上，及在图2b的箭头O所示的方向上，第一部分1051-1的厚度介于35μm～50μm，第二部分1051-2的厚度介于50μm～150μm。在发光装置100-2中，第一粘结层和第二粘结层同样形成类似“L”型结构。
具有该“L”型结构的粘结材料层对器件的非功能区、安装座形成包覆结构，在安装座和基板之间充分形成上述粘结材料层，不存在因缺少粘结材料造成的气泡或者缝隙，能够显著提高产品的气密性及可靠性。另外，上述第一粘结层1051和第二粘结层1052可以由相同的材料或者不同的材料形成，例如可以选择硅胶、白胶、氟树脂等，优选具有下面一个或者多个特性：粘结性较好、有一定的流动性、对LED芯片发出的光具有一定的反射作用的材料，由此能够在提高产品气密性的同时，也能够提高产品的使用寿命。
仍然参照图2a和图2b，本实施例中上述透光单元102形成透镜结构，其中透光区1022的凸透镜形成为半球型凸透镜。该半球形凸透镜的球直径介于2.00mm-3.50mm，优选3.20mm，整个透光单元的高度介于1.50mm-2.30mm，优选为2.10mm。在该凸透镜的作用下，如图3所示，LED发光装置的出光角在60°左右。LED发光装置的出光角度还可以通过调整安装座和透光区之间的空腔104中的填充材料来调节。例如，当LED芯片周围无任何填充材料，即腔体104内为空气或氮气时，LED发光装置的出光角在55°～80°之间；如果LED芯片周围，即空腔104中填充有无机胶等反射材料时，LED发光装置100-2的出光角在80°～120°之间。
如图4a所示，在本实施例的另一可选实施例中，透光单元同样形成为透镜结构，包括安装座1021和透光区1022，不同的是，透光区形成为半椭球型，并且为长轴方向上的半椭球型。具有该半椭球型透光区的透光单元的高度(即透镜结构的最高点与最低的表面之间的垂直距离)H1约为3.00～3.50mm，安装座高度H2介于0.30～0.70mm，所述凸透镜的最大宽度W介于2.00～3.50mm。如图4b所示，具有该半椭球型透光区的透光单元的发光装置的出光角在35°左右。同样可以通过调整安装座和透光区之间的空腔104中的填充材料来调节具有半椭球型透光单元的发光装置的出光角。例如，当LED芯片周围无任何填充材料，即空腔104内为空气或氮气时，发光装置的出光角约为25°～55°；如果LED芯片周围，即空腔104中填充有无机胶等反射材料时，发光装置的出光角在55°～75°之间。
实际应用中，可以根据出光角的要求选择任意透光单元。本实施例中，上述透光单元为石英玻璃透镜，也可以是塑料透镜等。
本实施例还同时提供了发光装置的制造方法，如图5所示，该制造方法包括以下步骤：
S201：提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；
S202：提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
参照图6a，首先提供基板101，该基板可以是陶瓷基板、印刷电路板等任意适合的基板。本实施例以平面陶瓷基板为例进行说明。该基板101包括相对设置的第一表面和第二表面，第一表面上形成有功能区1011和非功能区1012，第二表面设置有连通功能区1011的电极焊盘1013(可参照图2a和图2b)。功能区1011形成为用于固定LED芯片的固晶区，相邻的功能区之间形成切割区1018′。在本实施例中，将功能区1011之外的区域定义为非功能区1012。。
在本实施例的可选实施例中，如图6a所示，非功能区1012同样形成有金属镀层，具体地，非功能区的金属镀层形成在切割区1018′之外的区域。可以同时形成功能区和非功能区的金属镀层，功能区1011和非功能区1012的金属镀层相互间隔。例如可以通过刻蚀、沉积等工艺在基板101的第一表面上形成上述金属镀层。该金属镀层的厚度介于30～100μm之间，优选在50μm左右，由于金属镀层具有上述厚度，因此基板101在切割区1018形成凹槽106(可参见附图6a)。
在基板101上形成上述功能区和非功能区之后，提供LED芯片103，该LED芯片可以是任意类型的LED芯片，例如，可以是波长小于400nm，尤其是波长介于220nm～385nm之间的紫外或深紫外LED芯片，本实施例中，以波长介于220nm～385nm之间的紫外LED芯片为例。将LED芯片103固定至基板101的功能区1011上。例如可以通过打线、键合、焊接等多种工艺实现LED芯片的固定。如图6a所示，本实施例以倒装LED为例，将LED芯片键合至功能区1011。LED芯片的电极结构通过与功能区1011连通的位于基板第二表面的电极焊盘1013引出。
LED芯片固定到基板上，可以有不同的排布方式。如图6b和图6c所示，可以采用图6b所示的LED芯片与基板边对边的形式排布，LED芯片的侧边与基板的侧边平行，二者基本呈相互平行状态。还可以采用图6c所示的LED芯片与基板角对边的形式排布，LED芯片的四个角与基板的四个侧壁分别相对。尤其在LED芯片尺寸比较大的时候，采用图6c所示的排布方式，能够充分利用基板空间，提高基板利用率。在实际应用中，可以根据LED芯片的 尺寸以及基板的尺寸，灵活选用LED的排布方式。
S203：在所述基板上覆盖透光板，在所述功能区的外侧的基板上通过第一粘结层将所述透光板连接至所述基板，所述透光板覆盖所述LED芯片。
在基板101上固定好LED芯片103之后，在基板上覆盖透光板，实现对LED芯片的封装。在本实施例中，上述透光板以石英玻璃为例。首先在基板101的非功能区的表面上形成第一粘结层1051。该第一粘结层1051可以是硅胶、白胶或者氟树脂等具有一定的流动性的粘结材料。在本实施例中，如图7a所示，首先在非功能区1012的金属镀层上方形成第一粘结层的第一部分1051-1，其厚度控制在35μm～100μm之间，例如50μm左右。然后将石英玻璃覆盖在基板上。本实施例中，该石英玻璃为具有多个透光单元的整片石英玻璃，其中透光单元为图2所示的透镜结构。覆盖石英玻璃的过程具体如图8a～8e所示：
首先，如图8a所示，将图7a所示形成第一粘结层、固定有LED芯片的基板101置于第一治具1015中，该第一治具1015具有容纳基板101的卡槽(未具体图示)，将基板101放置在该卡槽中，实现基板的固定。同样参照图8a，该第一治具1015的侧壁顶端具有定位部件，例如，在本实施例中该定位部件为定位弹簧1016，定位弹簧的数量至少为两个，可以根据实际需要设置所需数量的定位部件。当然也可以是其他能够实现定位及分离的任意定位部件。
然后如图8b所示，将石英玻璃放置在第二治具1024中。如图8b所示，在本实施例中，石英玻璃为包括多个透光单元102的整片石英玻璃1020，透光单元1020包括透光区1022以及位于透光区外围的安装座1021。第二治具1024具有容纳石英玻璃1020的腔室，为了容纳并固定石英玻璃1020，在第二治具1024的腔室内壁上贴附一层热解胶膜，然后将整片石英玻璃1020放在该热解胶膜上，以将石英玻璃容纳并固定在第二治具1024中。同样如图8b所示，第二治具1024的侧壁的顶端同样具有定位部件1025，该定位部件1025与第一治具1015的定位部件1016相互配合。例如当第一治具的定位部件为定位弹簧1016时，第二治具的该定位可以是定位孔1025。第一治具和第二治具的定位部件可以互换，以能够实现定位和分离为准。
之后，如图8c所示，将固定有石英玻璃1020的第二治具翻转，使得石英玻璃面向基板101。通过定位弹簧1016和定位孔1025实现第一治具和第二治具的定位。通过该定位实现每一个透光单元与基板上的LED芯片对齐，优选地，使二者的中心线重合。如图8c所示，此时，定位弹簧1016与定位孔1025接触，并且石英玻璃1020与基板101并未接触。
然后，将定位好的第一治具和第二治具整体放入可以抽真空的层压设备中，如图8d所示，在层压的过程中抽真空使石英玻璃首先与基板上的第一粘结层1051接触。由于透光单元的安装座1021和透光区(凸透镜)1022之间形成空腔104(参照图2)，在层压过程中，透光区的安装座1021首先与基板上的第一粘结层接触，而LED芯片则容纳在该空腔104中，不会与透光区接触或者被透光区挤压，由此保证LED芯片的性能。在层压过程中，对第一粘结层进行加热烘烤实现其固化。同时在加热过程中贴合在第二治具的腔室内壁上的热解胶膜会分解失去粘结作用，石英玻璃与第二治具分离。
最后，如图8e所示，去除第一治具和第二治具。例如，首先去掉抽真空，此时在定位弹簧1016的恢复力作用下，第一治具和第二治具实现初步分离，然后将第二治具以及第一治具分离出来，得到图8e所示的覆盖有石英玻璃1020的结构。
本实施例，经上述方法覆盖石英玻璃，可以保证透镜中心位置与芯片中心位置偏移小于100μm，中心发光角度左右偏移小于±3°。
在本实施例的另一可选实施例中，与图7a所示的首先在非功能区的金属镀层上形成第一粘结层不同的是，如 图7b所示，首先在非功能区的金属镀层之间的凹槽106中填充第一粘结层1051。凹槽106中的第一粘结层1051的厚度大于形成功能区和非功能区的金属镀层的厚度。在优选实施例中，第一粘结层1051高出金属镀层大约50μm～200μm。然后同样按照图8a～图8e所示的过程完成覆盖石英玻璃的过程。将定位好的第一治具和第二治具整体放入可以抽真空的层压设备中，使石英玻璃首先与凹槽中的第一粘结层1051接触，然后在层压过程中，高于非功能区的金属镀层粘结材料被挤压向周围的金属镀层上流动，使原填充硅胶的凹槽位置的粘结材料量变少，非功能区的金属镀层上覆盖满粘结材料并且与石英玻璃贴合。然后进行抽真空，在保持真空的情况下，凹槽内高于金属镀层的粘结材料会形成不规则的变相流动，再次向非功能区的金属镀层上流动，补足非功能区的凹槽和/或金属镀层上缺少粘结材料的位置。经烘烤后，再次提高产品的气密性。上述过程中，凹槽内的粘结材料走凹槽流向非功能区的金属镀层上，不会流向功能区，不会对功能区造成污染。同样可以保证透镜中心位置与芯片中心位置偏移小于100μm，中心发光角度左右偏移小于±3°。
此时在凹槽中的粘结材料形成第一粘结层1051的第二部分1051-2，非功能区的金属镀层上方的粘结材料形成第一粘结层的第一部分1051-1。
S204：在所述切割区上方形成第一沟槽；
如图9所示，在图8e的结构基础上，沿着图9中箭头A11所示的方向，在相邻的透光单元之间对石英玻璃进行第一次切割，将石英玻璃切穿，由此在相邻的透光单元之间，切割区的上方，形成第一沟槽1023，该第一沟槽1023与基板上切割区上方的凹槽106连通。
S205：在所述第一沟槽中形成第二粘结层；
如图10所示，向第一沟槽1023中填充粘结材料分别形成第二粘结层1052。该第二粘结层可以是与第一粘结层相同的材料也可以是不同的材料。同样可以选自硅胶、白胶或者氟树脂。以硅胶为例，在凹槽和第一沟槽中填充硅胶形成第二粘结层之后，对硅胶进行烘烤，使其固化。如图10所示，当凹槽106中未被第一粘结层填充时，向第一沟槽中填充的粘结材料会流入并填充该凹槽106，形成第一粘结层的第二部分1051-2。
在本实施例中，沿LED发光装置的出光方向上，第一粘结层的厚度介于35μm～150μm，第二层粘结层的厚度大于第一粘结层的厚度，并且第二粘结层的厚度大约200μm～400μm。更具体地，沿LED发光装置的出光方向，第一粘结层的第一部分的厚度介于35μm～50μm，第二部分的厚度介于50μm～150μm。
S206：进行第二次切割，对齐所述切割区进行切割，直至将所述基板切穿，以形成所述发光装置。
同样参照图10，形成第二粘结层，在第二粘结层的位置处，沿图10的箭头A12所示的方向，对产品进行切割，依次切割第二粘结层1052以及基板101，将基板101切穿以获得图2b所示的LED发光装置。本实施例中，在垂直于切割方向(箭头A11及A12)的方向上，第二次切割的宽度小于所述第一次切割的宽度，由此保证形成的LED发光装置的侧壁上保留有一定宽度的粘结材料层。在优选实施例中，第一次切割的宽度为第二次切割的切割宽度的2倍，在LED发光装置的侧壁上保留的粘结材料层的厚度是第二次切割的切割宽度的1/2。
如图2所示，LED发光装置的侧壁整体是平面的，即，第二粘结层的侧壁、第一粘结层的侧壁和基板的侧壁是齐平的，有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。
如图11a所示，在本实施例的另一可选实施例中，在步骤S103，提供的石英玻璃为多个单独的透光单元102，该透光单元同样为透镜结构，包括安装座1021和凸透镜形式的透光区1022。该透光单元102可以是在整片石英玻璃上切割得到的独立的透光单元，也可以是单独成型的独立的透光单元。此时，如图11b所示，形成第一粘结层、固定有LED芯片的基板101同样置于第一治具1015中，与图8a不同的是，图11b所示的第一治具1015的侧壁顶端具有多个定位部件，例如，在本实施例中该定位部件为定位弹簧1016，定位弹簧的数量与下面将要描述的第二治 具的定位部件的数量相对应。当然也可以是其他能够实现定位及分离的任意定位部件。
然后如图11c所示，将多个透光单元102放置在第二治具1024中。如图11c所示，在本实施例中，第二治具1024具有容纳透光单元的多个腔室，第二治具1024的侧壁的顶端，以及相邻腔室的侧壁的顶端设置定位部件1025，该定位部件与第一治具1015的定位部件1016相互配合。例如当第一治具的定位部件为定位弹簧1016时，第二治具的该定位可以是定位孔1025。第一治具和第二治具的定位部件可以互换，以能够实现定位和分离为准。后续步骤与图8c～图8e所示过程相同，在此不再赘述。
由于透光单元是独立的单元，因此在透光单元之间即形成有第一沟槽1023，无需通过第一次切割。得到图11a所示的结构之后仍然如图10所示进行后续步骤，最终也同样获得图2b所示的LED发光装置。
在本实施例的另一可选实施例中，如图2c所示，LED发光装置100-2″的粘结材料层还包括形成在部分透光单元的上表面的第四粘结层1054。具体地，该第四粘结层形成在透光单元的安装座的至少部分上表面上。在图2c所示的LED发光装置100-2″中，该第四粘结层形成在透光单元的安装座的部分上表面上。可以理解的是，第四粘结层可以形成在安装座的整个上表面上。第四粘结层与第二粘结层形成连续结构，可以在形成第二粘结层的同时，形成该第四粘结层。在LED发光装置的出光方向上，即图2c中箭头O所示的方向上，第四粘结层的厚度大约为10μm～200μm。如上形成的粘结材料层对透光单元形成包裹，能够进一步提高器件的气密性，同时增加透光单元与基板的结合牢固性。
实施例三
本实施例同样提供一种LED发光装置，与实施例二的相同之处不再赘述，不同之处在于：
如图12a和图12b所示，本实施例的LED发光装置100-3中连接基板101及透光单元102的粘结材料层除了包括位于非功能区1012和安装座之间的第一粘结层1051以及位于安装座侧壁上的第二粘结层1052之外，还包括位于基板101的至少部分侧壁上的第三粘结层1053。该第三粘结层与第一粘结层、第二粘结层形成连续结构，形成类似“T”型的结构。
参照图12a，基板101的侧壁上形成台阶1017，第三粘结层形成在该台阶1017的表面及侧壁上，并且与第二粘结层连接。本实施例中上述“T”型的粘结材料层包裹透光单元和部分基板，能够进一步提高产品的气密性。
本实施例同样提供图12a所示的LED发光装置的制造方法，该方法与实施例二所提供的LED发光装置的制造方法的不同之处在于：
如图13所示，在经图9所示的第一次切割将透镜切穿形成第一沟槽1023之后，沿箭头A11所示的方向继续进行上述第一次切割，切割部分基板101，在基板101中形成第二沟槽1014。该第二沟槽与凹槽106、第一沟槽1023形成连贯结构。之后，如图14所示，在第二沟槽1014以及第一沟槽1023中填充粘结材料依次形成第三粘结层1053、第二粘结层1052。然后，同样如图14所示，沿箭头A12所示的方向进行第二次切割，依次切割第二粘结层1052、第三粘结层1053以及基板101，直至将基板切穿，获得图12a所示的LED发光装置。
在本实施例的另一可选实施例中，如图11所示，在将多个独立的透光单元覆盖在基板101上，在相邻透光单元之间形成第一沟槽1023之后，如图15所述，沿箭头A11所示的方向，经第一沟槽1023对基板进行第一次切割，切割部分基板101，在基板101上形成第二沟槽1014。
如上所述，在本实施例中，进行第一次切割形成第二沟槽时，对基板进行部分切割，切割的基板的厚度，即形成的第二沟槽的深度大约为基板整体厚度的1/3～2/3左右，以便在形成第二沟槽的同时保证基板自身的强度。
之后，同样如图14所示，在第二沟槽1014以及第一沟槽1023中填充粘结材料依次形成第三粘结层1053、第二粘结层1052。然后，同样如图14所示，沿箭头A12所示的方向进行第二次切割，依次切割第二粘结层1052、第 三粘结层1053以及基板101，直至将基板切穿，获得图12a所示的LED发光装置。如图12a所示，在发光装置100-3中，沿LED发光装置的出光方向，即图12a中箭头O所示的方向，第一粘结层1051的厚度t1介于35μm～150μm，其中，第一部分1051-1的厚度介于35μm～50μm，第二部分1051-2的厚度介于50μm～150μm，第二粘结层的厚度t2介于200μm～400μm；第三粘结层的厚度t3约为基板整体厚度的1/3～2/3左右。
在本实施例的另一可选实施例中，如图12b所示，在LED发光装置中第三粘结层1053形成在基板的整个侧壁上，对侧壁起到包裹作用。在该可选实施例中，有第一粘结层1051、第二粘结层1052、第三粘结层1053形成的粘结材料层对透镜102和基板101形成包裹作用，由此能够进一步提高器件的气密性。
图12b所示的LED发光装置的制造方法与图12a所示的制造方法的不同之处在于：将基本放置在能够固定基板的治具上，例如可以将基板粘附在具有粘结性的薄膜上。然后对基板进行切割，并且将基板完全切穿，形成贯穿整个基板的第二沟槽。然后在第二沟槽形成图12b所示的覆盖整个基板侧壁的第三粘结层。后续步骤与形成图12a的LED发光装置的步骤相同，在此不再赘述。
在本实施例的另一可选实施例中，如图12c所示，LED发光装置100-4′的粘结材料层还包括形成在部分透光单元的上表面的第四粘结层1054。具体地，该第四粘结层形成在透光单元的安装座的至少部分上表面上。在图12c所示的LED发光装置200-4′中，该第四粘结层形成在透光单元的安装座的部分上表面上。可以理解的是，第四粘结层可以形成在安装座的整个上表面上。第四粘结层与第二粘结层形成连续结构，可以在形成第二粘结层的同时，形成该第四粘结层。在LED发光装置的出光方向上，即图12c中箭头O所示的方向上，第四粘结层的厚度t4大约为10μm～200μm。如上形成的粘结材料层对透光单元形成包裹，能够进一步提高器件的气密性，同时增加透光单元与基板的结合牢固性。
实施例四
本实施例同样提供一种LED发光装置，如图16a所示，该LED发光装置200-1包括基板201，设置在基板第一表面上的LED芯片203，覆盖LED芯片203设置在基板201上的透光单元102，连接基板201及透光单元202的粘结材料层。
本实施例中上述透光单元102与实施例一的透光单元102相同，LED芯片203与实施例一的LED芯片103相同，以及本实施例的粘结材料层也与实施例二的粘结材料层相同，在此均不再赘述。与实施例二的不同之处在于：
本实施例中，基板201为具有碗杯结构的支架。该基板201同样包括形成在第一表面的功能区2011和非功能区2012，以及设置在第二表面设置的连通功能区2011的电极焊盘2013。功能区2011形成在碗杯结构的底面上，非功能区为基板的侧墙2010的上表面，非功能区包括切割区2018′。在可选实施例中，功能区同样可以由形成在碗杯结构的底面的金属镀层形成，该金属镀层的厚度介于35μm-100μm之间，优选在50μm左右。本实施例中，如图16a所示，以侧墙2010的上表面直接作为非功能区。
本实施例的LED发光装置的粘结材料层同样形成类似“L”型的结构，因此能够提高器件的气密性及可靠性。
实施例五
本实施例同样提供一种LED发光装置，如图16b所示，该LED发光装置200-1′包括基板201，设置在基板第一表面上的LED芯片203，覆盖LED芯片203设置在基板201上的透光单元102，连接基板201及透光单元202的粘结材料层。
本实施例中与实施例四的相同之处不再赘述，不同之处在于，如图16b所示，在本实施例中，LED发光装置的透光单元102为透镜结构，该透镜结构的内侧表面，即靠近LED芯片的一侧的表面，为平面结构，透光单元102不形成图16a所示的空腔，而是与安装座的下表面平齐。该透光单元减小了透镜结构与LED芯片之间的距离，能 够提供更好的透射率，在提高器件气密性的基础上，提高器件的出光效果。
实施例六
本实施例同样提供一种LED发光装置，如图17a所示，该LED发光装置200-2包括基板201，设置在基板第一表面上的LED芯片203，覆盖LED芯片203设置在基板201上的透光单元102，连接基板201及透光单元202的粘结材料层。
本实施例中与实施例四的相同之处不再赘述，不同之处在于：本实施例中，如图17a所示，本实施例的LED发光装置200-2中，粘结材料层除了包括位于非功能区2012和安装座1021之间的第一粘结层2051以及位于安装座侧壁上的第二粘结层2052之外，还包括位于基板201的至少部分侧壁上的第三粘结层2053。该第三粘结层与第一粘结层、第二粘结层形成连续结构，形成类似“T”型的结构。
本实施例的LED发光装置的粘结材料层同样形成类似“T”型的结构，因此能够提高器件的气密性及可靠性。
实施例七
本实施例同样提供一种LED发光装置，如图17b所示，该LED发光装置200-2′包括基板201，设置在基板第一表面上的LED芯片203，覆盖LED芯片203设置在基板201上的透光单元102，连接基板201及透光单元202的粘结材料层。
本实施例中与实施例六的相同之处不再赘述，不同之处在于，如图17b所示，在本实施例中，LED发光装置的透光单元102为透镜结构，该透镜结构的内侧表面，即靠近LED芯片的一侧的表面，为平面结构，透光单元102不形成图17a所示的空腔，而是与安装座的下表面平齐。该透光单元减小了透镜结构与LED芯片之间的距离，能够提供更好的透射率，在提高器件气密性的基础上，提高器件的出光效果。
实施例八
本实施例同样提供一种LED发光装置，如图18a所示，该LED发光装置200-3包括基板201，设置在基板第一表面上的LED芯片203，覆盖LED芯片203设置在基板201上的透光单元102，连接基板201及透光单元202的粘结材料层。
如图18a所示，在本实施例中，上述基板201与实施例四的基板相同，均为带有碗杯的支架。LED芯片203固定在设置有功能区2011的碗杯中，支架侧墙2010的上表面作为非功能区2012。
同样参照图18a，本实施例中，透光单元202为平面结构，例如可以是平板石英玻璃或者塑料等。在此以平面石英玻璃为例进行说明，在本实施例中，该平面石英玻璃板的厚度小于LED芯片的厚度小于碗杯支架的侧墙的高度。例如，石英玻璃的厚度在350μm左右，芯片的厚度大约为500μm，碗杯支架的侧墙的稿度大于1000μm。该透光单元202同样包括安装座2021以及透光区2022，安装座通过粘结材料层贴合至基板201的侧墙2010的上表面，透光区覆盖碗杯区域，即，覆盖碗杯中的LED芯片。如图18a所示，LED发光装置200-1的侧壁是齐平的，即透光单元的侧壁、粘结材料层1051的侧壁以及碗杯支架的侧壁是齐平的。这样的结构有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。
本实施例还提供了图18a所示的LED发光装置的制造方法，同样参照图1c，该方法同样包括如下步骤：
S101：提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；
S102：提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
参照图19，首先提供一基板201，该基板为带有碗杯的支架。该基板201包括相对设置的第一表面和第二表面，第一表面上形成有功能区2011，第二表面设置有连通功能区2011的电极焊盘2013，上述功能区形成在碗杯的内侧 表面上。同样可以通过在基板201的第一表面上形成金属镀层进而形成上述功能区，该金属镀层的厚度介于30μm～100μm之间，优选在50μm左右。例如可以通过刻蚀、沉积等工艺在基板201的第一表面上形成上述功能区2011。本实施例中，如图19所示，以侧墙2010的部分上表面直接作为非功能区2012，非功能区的切割区2018形成在支架的侧墙2010的上表面上。
在基板201上形成上述功能区之后，提供LED芯片203，该LED芯片可以是任意类型的LED芯片，例如，可以是波长小于385nm，尤其是波长介于220nm～385nm之间的紫外或深紫外LED芯片，本实施例中，以波长介于220nm～385nm之间的紫外LED芯片为例。将LED芯片203固定至基板201的功能区2011上，及固定在碗杯中。例如可以通过打线、键合、焊接等多种工艺实现LED芯片的固定。如图19所示，本实施例以倒装LED为例，将LED芯片键合至功能区2011。LED芯片的电极结构通过与功能区2011连通的位于基板第二表面的电极焊盘2013引出。
S103：在所述基板上覆透光板，在所述功能区的外侧的基板上通过粘结层将所述透光板连接至所述基板所述透光板覆盖所述LED芯片；
在基板201上固定好LED芯片203之后，在基板上覆盖透光板，实现对LED芯片的封装。在本实施例中，上述透光板以石英玻璃为例。如图20所示，首先在基板201的基板的侧墙2010的上表面形成粘结层2051。该粘结层2051可以是硅胶、白胶或者氟树脂。粘结层具有一定的流动性，其厚度控制在小于50μm。然后将石英玻璃覆盖在基板上，连接至粘结层。本实施例中，该石英玻璃为具有多个透光单元的整片石英玻璃2020，其中透光单元为图18a所示的平板式的透光单元202。同样可以采用图8a～8d的过程在基板201上覆盖石英玻璃2020，在此不再详细描述该过程，可参照实施例一的描述。
最后，如图21所示，形成基板201上覆盖有石英玻璃2020的结构，其中每一个透光单元与每一个LED芯片一一对应。
本实施例，经上述方法覆盖石英玻璃，可以保证透镜中心位置与芯片中心位置偏移小于100μm，中心发光角度左右偏移小于±3°。
S104：进行切割，对齐所述基板的切割区进行切割，直至将所述基板切穿，以形成所述发光装置。
形成图21所示的结构之后，对准支架侧墙的切割区进行切割，直至切穿基板201，得到图18a所示的LED发光装置。
在本实施例的另一可选实施例中，如图18b所示，发光装置200-3′中，粘结材料层包括位于侧墙上表面的第一粘结层2051以及位于透光单元的侧壁上的第二粘结层2052。上述第一粘结层2051、第二粘结层2052形成连续结构，形成类似“L”型的结构，对透光单元形成包裹的效果，由此能够大大提高透光单元与基板的粘附牢固性以及器件的气密性。
同样参照图5，形成图18b所示的发光装置同样包括如下步骤：
S201：提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；
S202：提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；
S203：在所述基板上覆透光板，在所述功能区的外侧的基板上通过第一粘结层将所述透光板连接至所述基板所述透光板覆盖所述LED芯片；
S204：在所述切割区上方形成第一沟槽；
上述步骤S201～S203与形成图18a的发光装置的步骤S101～S103相同，在此不再赘述。
经上述步骤S201～S203形成图21所示的结构之后，如图22所示，在图21的结构基础上，沿着图22中箭头A21所示的方向，在相邻的透光单元之间对石英玻璃进行第一次切割，将石英玻璃切穿，由此在相邻的透光单元之间形成第一沟槽2023。
S205：在所述第一沟槽中形成第二粘结层，所述第二粘结层与所述第一粘结层形成连续结构；
如图23所示，向第一沟槽2023中填充粘结材料形成第二粘结层2052。该第二粘结层可以是与第一粘结层相同的材料也可以是不同的材料。同样可以选自硅胶、白胶或者氟树脂。以硅胶为例，在第一沟槽中填充硅胶形成第二粘结层2052之后，对硅胶进行烘烤，使其固化。
在本实施例中，第一层粘结层的厚度小于第二粘结层的厚度，并且第一粘结层的厚度大约在35μm～150μm，第二层粘结层的厚度大约在200μm～400μm。
S206：进行第二次切割，沿所述第二粘结层切割直至将所述基板切穿，以形成所述发光装置。
同样参照图23，形成第二粘结层之后，在第二粘结层的位置处，沿图23的箭头A22所示的方向，对产品进行切割，依次切割第二粘结层2052、第一粘结层2051以及基板201，将基板201切穿以获得图18b所示的LED发光装置。本实施例中，在垂直于切割方向(箭头A21及A22)的方向上，第二次切割的宽度小于所述第一次切割的宽度，由此保证形成的LED发光装置的侧壁上保留有一定宽度的粘结材料层。在优选实施例中，第一次切割的宽度为第二次切割的切割宽度的2倍，在LED发光装置的侧壁上保留的粘结材料层的厚度是第二次切割的切割宽度的2倍。
如图18b所示，LED发光装置的侧壁整体是平面的，即，第二粘结层的侧壁、第一粘结层的侧壁和基板的侧壁是齐平的，在提高器件的气密性的同时，有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。
如图24所示，在本实施例的另一可选实施例中，在步骤S103，提供的石英玻璃为多个单独的透光单元202，该透光单元同样为平板石英玻璃，透光单元包括安装座2021和透光区2022。该透光单元202可以是在整片石英玻璃上切割得到的独立的透光单元，也可以是单独成型的独立的透光单元。同样通过图8a～图8d所示的过程将多个透光单元覆盖在基板上，得到图24所示的结构。由于透光单元是独立的单元，因此在透光单元之间即形成有第一沟槽2023，无需通过第一次切割。得到图24所示的结构之后仍然如图23所示进行后续步骤，最终也同样获得图18所示的LED发光装置。
实施例九
本实施例同样提供一种LED发光装置，与实施例八的相同之处不再赘述，不同之处在于：
如图25a所示，本实施例的LED发光装置200-4中连接基板201及透光单元202的粘结材料层除了包括位于碗杯支架的侧墙上表面和安装座之间的第一粘结层2051、位于安装座侧壁上的第二粘结层2052之外，还包括位于基板201的部分侧壁上的第三粘结层2053。该第三粘结层与第一粘结层、第二粘结层形成连续结构，形成类似“T”型的结构。
同样参照图25a，基板201的侧壁(及侧墙2010的侧壁)上形成台阶2017，第三粘结层形成在该台阶2017的表面及侧壁上，并且与第三粘结层和第二粘结层连接。本实施例中上述“T”型的粘结材料层包裹透光单元和部分基板，能够进一步提高产品的气密性。
本实施例同样提供图25a所示的LED发光装置的制造方法，该方法与实施例一所提供的LED发光装置的制造方法的不同之处在于：
如图26所示，在经图22所示的第一次切割将石英玻璃2020切穿形成第一沟槽1023之后，沿箭头A21所示的方向继续进行上述第一次切割，切割部分基板201，在基板201中形成第二沟槽2014。该第二沟槽与第一沟槽2023 形成连贯结构。之后，如图27所示，在第二沟槽2014以及第一沟槽2023中填充粘结材料依次形成第三粘结层2053、第二粘结层20523。然后，同样如图27所示，沿箭头A22所示的方向进行第二次切割，依次切割第三粘结层2053、第二粘结层2052以及基板201，直至将基板切穿，获得图25a所示的LED发光装置。
在本实施例的另一可选实施例中，如图24所示，在将多个独立的透光单元覆盖在基板201上，在相邻透光单元之间形成第一沟槽2023之后，如图28所述，沿箭头A21所示的方向，经第一沟槽2023对基板进行第一次切割，切割部分基板201，在基板201上形成第二沟槽2014。在本实施例中，进行第二次切割对基板进行部分切割，切割的基板的厚度，即形成的第二沟槽的深度大约为基板的侧墙的厚度(沿切割方向上的厚度)的1/2左右，优选地小于侧墙厚度的1/2，以便在形成第二沟槽的同时保证基板自身的强度。
之后，同样如图27所示，在第二沟槽2014以及第一沟槽2023中填充粘结材料依次形成第三粘结层2053、第二粘结层2052。然后，同样如图27所示，沿箭头A22所示的方向进行第二次切割，依次切割第二粘结层2052、第三粘结层2053以及基板201，直至将基板切穿，获得图25a所示的LED发光装置。
为了验证本发明的LED发光装置的气密性，将现有技术中的LED发光装置，以及本发明中包括具有不同结构的粘结材料层的LED发光装置进行He气泄漏试验，选取本发明图1、图2b及图12a所示的LED发光装置100-1、100-2及100-3作为测试对象，其中发光装置100-1的粘结材料层仅包括形成在非功能区和透光单元之间的第一粘结层；发光装置100-2的粘结材料层包括上述第一粘结层以及位于透光单元侧壁上的第二粘结层，该粘结材料层形成“L”型结构；发光装置100-3的粘结材料层包括上述第一粘结层、第二粘结层以及位于基板的部分侧壁上的第三材料层，该粘结材料层形成“T”型结构。上述各发光装置的气密性测试结果如图29所示，由图29可以看出，本申请的发光装置100-1相对于现有技术中的发光装置，氦气泄漏速率显著降低，现有技术中的发光装置氦气泄漏速率都在9.0×10-9Pa·m2/s以上，而本申请的发光装置100-1的氦气泄漏速率显著均低于9.0×10-9Pa·m2/s，大多集中在6.0×10-9Pa·m2/s。可见，本申请的发光装置100-1相对于现有技术中的发光装置，气密性显著提高，可靠性也由此显著提高。
进而比较本申请的发光装置100-1、100-2及100-3，同样由图29可知，相比于发光装置100-1，发光装置100-2以及发光装置100-3的He气泄漏速率进一步减小。具体地，发光装置100-3的He气泄漏速率均小于3.5×10-9Pa·m2/s，80％的发光装置100-2的He气泄漏速率小于5.0×10-9Pa·m2/s。综上可以看出，具有“L”型或者“T”型结构的粘结材料层的发光装置的气密性能够进一步提高，可靠性也能够显著提高。
在本实施例的另一可选实施例中，如图25b所示，在LED发光装置200-4′中第三粘结层2053形成在基板的整个侧壁上，对侧壁起到包裹作用。在该可选实施例中，有第一粘结层2051、第二粘结层2052及第三粘结层2053形成的粘结材料层对透镜202和基板201形成包裹作用，由此能够进一步提高器件的气密性。
图25b所示的LED发光装置的制造方法与图25a所示的制造方法的不同之处在于：将基本放置在能够固定基板的治具上，例如可以将基板粘附在具有粘结性的薄膜上。然后对基板进行切割，并且将基板完全切穿，形成贯穿整个基板的第二沟槽。然后在第二沟槽形成图25b所示的覆盖整个基板侧壁的第三粘结层。后续步骤与形成图25a的LED发光装置的步骤相同，在此不再赘述。
本发明仅以图25b所示的LED发光装置说明了第三粘结层可以形成在具有碗杯的基板的整个侧壁上。可以理解的是，在图17a和图17b所示的LED发光装置中，第三粘结层同样可以形成在基板的整个侧壁上，在此不再详细描述。
实施例十
本实施例同样提供一种LED发光装置，与实施例八的相同之处不再赘述，不同之处在于：
如图30所示，本实施例中，LED发光装置200-5的基板201的支架侧墙2010的上表面形成有台阶207，该台阶207形成在支架侧墙2010靠近碗杯(及功能区)的一侧。透光单元202设置在该台阶207上。粘结材料层的第一粘结层2051位于台阶207的表面与透光单元的安装座2021之间，第二粘结层2052位于台阶207的侧壁与透光单元202的侧壁之间。上述第一粘结层2051和第二粘结层2052形成连续结构，同样形成类似“L”型的结构，对透光单元形成包裹的效果，由此能够大大提高透光单元与基板的粘附牢固性以及器件的气密性。
实施例十一
本实施例同样提供一种LED发光装置，与实施例十的相同之处不再赘述，不同之处在于：
如图31所示，本实施例中，LED发光装置200-6的第二粘结层2052位于台阶207的侧壁与透光单元202的侧壁之间，同时还形成在支架侧墙2010的部分上表面上。上述第一粘结层2051和第二粘结层2052形成连续结构，同样形成类似“Z”型的结构，相对于实施例十的LED发光装置200-5，本实施例的LED发光装置200-6中，第二粘结层与基板201和透光单元202的接触面积增大，由此进一步增大了基板和透光单元的连接牢固性，进一步提高器件的气密性。
实施例十二
本实施例同样提供一种LED发光装置，与实施例十一的相同之处不再赘述，不同之处在于：
如图32所示，本实施例中，LED发光装置200-7的第二粘结层2052位于台阶207的侧壁与透光单元202的侧壁之间，同时还形成在支架侧墙2010的全部上表面上。上述第一粘结层2051和第二粘结层2052形成连续结构，同样形成类似“Z”型的结构，相对于实施例十一的LED发光装置200-6，本实施例的LED发光装置200-7中，进一步增大了第二粘结层与基板201和透光单元202的接触面积，由此进一步增大了基板和透光单元的连接牢固性，进一步提高器件的气密性。
实施例十三
本实施例同样提供一种LED发光装置，与实施例十二的相同之处不再赘述，不同之处在于：
如图33所示，本实施例中，LED发光装置200-8的第二粘结层2052位于台阶207的侧壁与透光单元202的侧壁之间，同时还形成在支架侧墙2010的全部上表面上，并且在LED发光装置的出光方向上，第二粘结层2052的上表面与透光单元202的上表面齐平。可以理解的是，第二粘结层的上表面略高于透光单元202的上表面，并且第二粘结层形成在部分透光单元的上表面上，具体地，形成在安装座的上表面上。上述第一粘结层2051和第二粘结层2052形成连续结构，同样形成类似“Z”型的结构，相对于实施例十一的LED发光装置200-7，本实施例的LED发光装置200-7中，第二粘结层的上表面与透光单元的上表面齐平，对透光单元的整个侧壁形成包裹；或者，第二粘结层可以形成在透光单元的部分上表面上，对透光单元形成包裹。本实施例的LED发光装置进一步增大了第二粘结层与基板201和透光单元202的接触面积，形成由此进一步增大了基板和透光单元的连接牢固性，进一步提高器件的气密性。
如上所述，本发明提供的LED发光装置及其制造方法，至少具备如下有益技术效果：
本发明的LED发光装置包括：基板，设置在基板的功能区的LED芯片，覆盖在基板上方并覆盖LED芯片的透光单元以及连接所述基板与所述透光单元的粘结材料层。在所述LED芯片的出光方向上，本发明的LED发光装置的侧壁整体上齐平，有利于产品在编带震动盘内更好的摆好位置，更好的提升包装良率。粘结层的第一部分均匀且完全填充在金属条带和透镜单元之间，无气泡或间隙，能够显著增加器件的气密性。另外，形成在金属条带外侧的至少部分基板上的第二部分能够进一步阻挡水汽等进入器件内部，尤其当第二部分填满金属条带外侧的基板和透光单元之间的空隙时，能够进一步提高器件的气密性。
本发明的另一实施例中的LED发光装置中，基板和透光单元之间的所述粘结材料层包括：位于所述基板的第一表面上的所述功能区外侧的基板上方的第一粘结层，以及位于所述透光单元的侧壁上的第二粘结层，所述粘结材料层在所述LED发光装置中形成连续结构。上述粘结材料整体形成类似“L”型的结构，这一结构的粘结材料能能够充分粘结基板和透光单元，增强二者之间的结合力，提高产品的可靠性。同时粘结材料层充分填充基板和透光单元之间的空隙，同时还形成在在透光单元的侧壁上，有效提高基板和透光单元之间的密封性，挺高产品的气密性及可靠性。
另外，本发明的发光装置中的上述粘结材料层还可以包括形成在基板的至少部分侧壁上的第三粘结层，例如，在基板侧壁上形成台阶，该第三粘结层形成在该台阶的表面及侧壁上。包括该第三粘结层的粘结材料层形成类似“T”或者“Z”型的连续结构。该结构在基板、透光单元之间及二者周围形成包覆结构，能够进一步提高产品的气密性及可靠性。
进一步地，上述粘结材料层还可以包括形成在透光单元的部分上表面的第四粘结层，具体的，该第四粘结层形成在透光单元的安装座的至少部分上表面上，由此进一步增大粘结材料的粘结面积，增大透光单元与基板的结合力，进一步增强产品的气密性及可靠性。
上述粘结材料层优选具有下面一个或者多个特性：粘结性较好、有一定的流动性、对LED芯片发出的光具有一定的反射作用，例如可以选择硅胶、白胶、氟树脂等，由此能够在提高产品气密性的同时，也能够提高产品的出光效果。
本发明的发光装置的制造方法，可以采用整片基板上覆盖包含多个透光单元的整片石英玻璃板的方式，或者采用石英玻璃形成的多个独立的透光单元贴合至在整片基板上的方式。首先将整片石英玻璃板或独立的透光单元和基板通过各自治具上对应的定位部件实现二者的定位，保证透光单元的透光区与基板上的LED芯片的中心重合，该过程可以有效改善石英玻璃板或透光单元的偏移，避免LED芯片的中心发光角的偏移；透光单元的安装座与基板上涂覆有第一粘结层的功能区外侧的区域对齐，在有抽真空的层压设备中使石英玻璃与基板上的第一粘结层接触并挤压实现二者的紧密贴合。进一步地，可以在透光单元之间形成第一沟槽，在第一沟槽中填充粘结材料，使其充满第一沟槽形成第二粘结层，经烘烤固化后，沿第三粘结层切割，得到发光装置，由此形成包括类似“L”型结构的粘结材料层的发光装置。该方法可以保证发光装置的气密性及可靠性，并且整个过程能够有效改善石英玻璃的偏移。上述制造方法在形成上述第一沟槽的同时，沿第一沟槽切割部分基板，第基板上形成第二沟槽，在第二沟槽中形成上述第三粘结层。由此形成上述类似“T”型的粘结材料层，进一步提高装置的气密性及可靠性。
上述实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。

Claims (24)

  1. 一种LED发光装置，其特征在于，包括：基板，所述基板具有相对设置的第一表面和第二表面，所述基板的第一表面上形成有功能区；LED芯片，所述LED芯片固定在所述基板的第一表面的所述功能区；透光单元，所述透光单元设置在所述基板的第一表面上方，并且覆盖所述LED芯片；粘结材料层，连接所述基板与所述透光单元，所述粘结材料层位于所述功能区外侧的基板上方；其中，在所述LED芯片的出光方向上，所述LED发光装置的侧壁整体齐平。
  2. 根据权利要求1所述的LED发光装置，其特征在于，所述基板为平面基板，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成在所述功能区及所述功能区外侧的基板上，并且所述金属镀层在所述功能区外侧的基板上形成环绕所述功能区的金属条带，所述金属条带与所述功能区间隔分布。
  3. 根据权利要求1所述的LED发光装置，其特征在于，所述基板为具有碗杯的支架，所述功能区形成在所述碗杯内侧，所述LED芯片位于所述碗杯中。
  4. 根据权利要求1所述的LED发光装置，其特征在于，在所述LED芯片的出光方向上，所述粘结材料层的厚度介于35μm～150μm。
  5. 根据权利要求2所述的LED发光装置，其特征在于，所述粘结材料层包括位于所述功能区外侧的所述金属条带上方的第一部分，以及位于所述金属条带外侧的至少部分基板上的第二部分。
  6. 根据权利要求5所述的LED发光装置，其特征在于，在所述LED芯片的出光方向上，所述粘结材料层的所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
  7. 根据权利要求3所述的LED发光装置，其特征在于，所述透光单元为平板结构，所述平板结构包括位于外围的安装座以及位于中间部分为透光区，所述透光单元通过所述安装座连接至所述支架的侧墙。
  8. 根据权利要求2或3所述的LED发光装置，其特征在于，所述透光单元为透镜结构，所述透镜结构包括凸透镜以及形成在所述凸透镜周围的安装座，其中，所述安装座与所述凸透镜之间形成空腔，所述透光单元通过所述安装座连接至所述基板；所述LED芯片位于所述空腔中。
  9. 根据权利要求8所述的LED发光装置，其特征在于，所述凸透镜为半球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
  10. 根据权利要求8所述的LED发光装置，其特征在于，所述凸透镜为长轴方向上的半椭球型凸透镜，所述凸透镜的球心位于所述LED芯片的上表面与所述凸透镜的内表面之间。
  11. 根据权利要求10所述的LED发光装置，其特征在于，所述透镜结构的最高点与最低的表面之间的垂直距离介于3.00～3.50mm，所述透镜结构的安装座高度介于0.3～0.7mm，所述凸透镜的最大宽度介于3.00～3.50mm。
  12. 根据权利要求1所述的LED发光装置，其特征在于，所述透光单元为石英玻璃。
  13. 根据权利要求1～12中任意一项所述的LED发光装置，其特征在于，所述透光单元的中心与所述LED芯片的中心的偏移距离小于100μm。
  14. 根据权利要求1所述的LED发光装置，其特征在于，在垂直于所述LED芯片的出光方向的方向上，所述透光单元与所述基板具有相同的宽度，所述透光单元的侧壁与所述基板的侧壁齐平。
  15. 根据权利要求1所述的LED发光装置，其特征在于，所述粘结材料层包括位于所述基板上的第一粘结层以及位于所述透光单元的侧壁上的第二粘结层，所述粘结材料层的侧壁与所述基板的侧壁齐平。
  16. 根据权利要求1所述的LED发光装置，其特征在于，所述粘结材料层包括位于所述基板上的第一粘结层，位于所述透光单元的侧壁上的第二粘结层，以及位于所述基板的至少部分侧壁上的第三粘结层，所述粘结材料层的侧壁与所述基板的侧壁齐平。
  17. 一种LED发光装置的制造方法，其特征在于，包括以下步骤：提供基板，所述基板具有相对设置的第一表面和第二表面，在所述第一表面上形成功能区，相邻功能区之间形成切割区；提供LED芯片，并将所述LED芯片固定在所述基板的第一表面的所述功能区上；在所述基板上覆盖透光板，在所述功能区的外侧的基板上通过粘结材料层将所述透光板连接至所述基板，所述透光板覆盖所述LED芯片；进行切割，对齐所述基板的切割区进行切割，直至将所述基板切穿，以形成所述发光装置。
  18. 根据权利要求17所述的制造方法，其特征在于，所述基板为平面基板或者具有碗杯的支架，其中，当所述基板为平面基板时，所述基板的第一表面上设置有高于所述第一表面的金属镀层，所述金属镀层形成所述功能区以及所述功能区外侧的部分基板上的金属条带，所述金属条带环绕所述功能区并且与所述功能区间隔分布，相邻的所述金属条带之间形成凹槽；当所述基板为具有碗杯的支架时，所述功能区形成在所述碗杯内侧，所述LED芯片位于所述碗杯中。
  19. 根据权利要求18所述的制造方法，其特征在于，当所述基板为平面基板时，在所述基板上覆盖透光板还包括以下步骤：提供包括多个透光单元的石英玻璃，每一个透光单元均包括位于所述透光单元四周的安装座以及位于所述安装座中间的透光区；在所述凹槽中填充粘结材料；将所述石英玻璃贴合至所述基板，使得部分所述粘结材料形成至所述金属条带上方，每一个透光单元的安装座通过所述粘结材料连接至所述基板，所述石英玻璃的每一个透光单元的透光区与所述LED芯片一一对应。
  20. 根据权利要求19所述的制造方法，其特征在于，当所述基板为平面基板时，所述透光单元形成为透镜结构，其中所述透光区为凸透镜；当所述基板为具有碗杯的支架时，所述透光单元形成为透镜结构或者平板结构，当所述透光单元为透镜结构时，所述透光区为凸透镜。
  21. 根据权利要求17所述的制造方法，其特征在于，所述粘结材料层的厚度介于35μm～150μm。
  22. 根据权利要求19所述的制造方法，其特征在于，当所述基板为平面基板时，所述粘结材料层包括形成在所述金属条带上的第一部分以及形成在所述凹槽中的第二部分，所述第一部分的厚度介于35μm～50μm，所述第二部分的厚度介于50μm～150μm。
  23. 根据权利要求17所述的制造方法，其特征在于，在进行切割之前，还包括：进行第一次切割，对所述透光板进行切割，以在所述切割区上方形成第一沟槽；在所述第一沟槽中形成粘结材料层的第二粘结层。
  24. 根据权利要求17所述的制造方法，其特征在于，在进行切割之前，还包括：进行第一次切割，对所述透光板及至少部分所述基板进行切割，以在所述切割区上方形成第一沟槽，并且在所述基板中形成第二沟槽，所述第二沟槽与所述第一沟槽连通；在所述第二沟槽中形成所述粘结材料层的第三粘结层；在所述第一沟槽中形成所述粘结材料层的第二粘结层。
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