WO2022137550A1 - 積層板及び配線基板の製造方法 - Google Patents
積層板及び配線基板の製造方法 Download PDFInfo
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- WO2022137550A1 WO2022137550A1 PCT/JP2020/048895 JP2020048895W WO2022137550A1 WO 2022137550 A1 WO2022137550 A1 WO 2022137550A1 JP 2020048895 W JP2020048895 W JP 2020048895W WO 2022137550 A1 WO2022137550 A1 WO 2022137550A1
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- Prior art keywords
- layer
- copper
- resin layer
- laminated board
- less
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 23
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 123
- 229910052802 copper Inorganic materials 0.000 claims abstract description 98
- 239000010949 copper Substances 0.000 claims abstract description 98
- 229920005989 resin Polymers 0.000 claims abstract description 68
- 239000011347 resin Substances 0.000 claims abstract description 68
- 238000007747 plating Methods 0.000 claims abstract description 17
- 238000010521 absorption reaction Methods 0.000 claims abstract description 16
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 16
- 239000004020 conductor Substances 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- 239000011342 resin composition Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 12
- 229920001187 thermosetting polymer Polymers 0.000 claims description 11
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 claims description 9
- 238000012360 testing method Methods 0.000 claims description 9
- 239000000945 filler Substances 0.000 claims description 8
- 239000000377 silicon dioxide Substances 0.000 claims description 8
- 230000003449 preventive effect Effects 0.000 claims description 6
- 239000004744 fabric Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 claims description 2
- 239000011889 copper foil Substances 0.000 description 26
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- 230000003647 oxidation Effects 0.000 description 5
- 238000007254 oxidation reaction Methods 0.000 description 5
- 230000005540 biological transmission Effects 0.000 description 4
- 238000007772 electroless plating Methods 0.000 description 4
- 238000012545 processing Methods 0.000 description 4
- 239000003054 catalyst Substances 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000009713 electroplating Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 150000007524 organic acids Chemical class 0.000 description 3
- 229910052763 palladium Inorganic materials 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000005065 mining Methods 0.000 description 2
- 238000010295 mobile communication Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 150000001879 copper Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229920006015 heat resistant resin Polymers 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000000016 photochemical curing Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229920005992 thermoplastic resin Polymers 0.000 description 1
- -1 triazole compound Chemical class 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/108—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern by semi-additive methods; masks therefor
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/181—Printed circuits structurally associated with non-printed electric components associated with surface mounted components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/04—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material
- B32B15/08—Layered products comprising a layer of metal comprising metal as the main or only constituent of a layer, which is next to another layer of the same or of a different material of synthetic resin
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B15/00—Layered products comprising a layer of metal
- B32B15/20—Layered products comprising a layer of metal comprising aluminium or copper
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/1601—Process or apparatus
- C23C18/1633—Process of electroless plating
- C23C18/1646—Characteristics of the product obtained
- C23C18/165—Multilayered product
- C23C18/1653—Two or more layers with at least one layer obtained by electroless plating and one layer obtained by electroplating
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2311/00—Metals, their alloys or their compounds
- B32B2311/12—Copper
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2457/00—Electrical equipment
- B32B2457/08—PCBs, i.e. printed circuit boards
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0213—Electrical arrangements not otherwise provided for
- H05K1/0237—High frequency adaptations
- H05K1/024—Dielectric details, e.g. changing the dielectric material around a transmission line
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/02—Fillers; Particles; Fibers; Reinforcement materials
- H05K2201/0203—Fillers and particles
- H05K2201/0206—Materials
- H05K2201/0209—Inorganic, non-metallic particles
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0338—Layered conductor, e.g. layered metal substrate, layered finish layer or layered thin film adhesion layer
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/03—Conductive materials
- H05K2201/0332—Structure of the conductor
- H05K2201/0335—Layered conductors or foils
- H05K2201/0358—Resin coated copper [RCC]
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10431—Details of mounted components
- H05K2201/10553—Component over metal, i.e. metal plate in between bottom of component and surface of PCB
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/13—Moulding and encapsulation; Deposition techniques; Protective layers
- H05K2203/1377—Protective layers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
Definitions
- the present disclosure relates to a laminated board provided with a copper layer having a thickness of 5 ⁇ m or less and a method for manufacturing a wiring board using the laminated board.
- 5G 5th generation mobile communication system
- 4G 4th generation mobile communication system
- high-frequency electric signals have a characteristic of being greatly attenuated (transmission loss), and circuit boards for high frequencies are required to keep transmission loss low.
- Patent Document 1 discloses an invention relating to a roughened copper foil, a copper-clad laminated board, and a printed wiring board. According to Patent Document 1, the roughened copper foil described therein can significantly improve the heat-resistant peel strength against a thermoplastic resin having a low dielectric constant.
- the present disclosure provides a laminated board useful for improving the reliability of a wiring board and a method for manufacturing a wiring board using the laminated board.
- This laminated board includes a copper layer having a thickness of 5 ⁇ m or less and a resin layer provided on the surface of the copper layer, and after being placed in an environment at a temperature of 130 ° C. and a relative humidity of 85% for 200 hours, the resin is used.
- the water absorption rate of the layer is 1% or less.
- "after being placed in an environment with a temperature of 130 ° C. and a relative humidity of 85% for 200 hours” will be referred to as "after a highly accelerated life test” in some cases.
- the "highly accelerated life test” may be referred to as HAST (Highly Accelerated Stress Test).
- the fine wiring of the wiring board is formed through the process of processing this copper layer. Since the generation of rust in the copper layer is suppressed, the fine wiring can maintain the performance to be exhibited for a sufficiently long period of time.
- the 90 ° peel strength at the interface between the copper layer and the resin layer satisfies the following conditions. -The 90 ° peel strength at the interface between the copper layer and the resin layer is 0.4 N / mm or more. After the high acceleration life test, the 90 ° peel strength at the interface between the copper layer and the resin layer is 0.25 N / mm or more. -The rate of change in 90 ° peel strength before and after the advanced accelerated life test is -30 to 0%.
- the laminated board may further include a rust preventive layer between the resin layer and the copper layer.
- the rust preventive layer suppresses oxidation of the copper layer and the fine wiring formed by processing the copper layer.
- One aspect of the present disclosure relates to a method for manufacturing a wiring board.
- This manufacturing method includes the following steps.
- a copper layer having a thickness of 5 ⁇ m or less, a resin layer, and a support substrate are provided in this order, and the water absorption rate of the resin layer is 1 after being placed in an environment with a temperature of 130 ° C. and a relative humidity of 85% for 200 hours.
- % The process of preparing a laminated board that is less than or equal to%.
- the method for manufacturing a wiring board according to the present disclosure may be to manufacture a multilayer wiring board including a via hole and a conductive material filled therein.
- This method for manufacturing a wiring board includes the following steps. A copper layer having a thickness of 5 ⁇ m or less, a resin layer, and a support substrate are provided in this order, and the water absorption rate of the resin layer is 1 after being placed in an environment with a temperature of 130 ° C. and a relative humidity of 85% for 200 hours. % The process of preparing a laminated board that is less than or equal to%. -A step of forming a first opening that penetrates the copper layer and the resin layer and reaches the surface of the support substrate.
- -A step of forming a seed layer by electroless copper plating on the surface of the copper layer and the side surface of the first opening -A step of forming a resist pattern having a second opening communicating with the first opening on the surface of the seed layer.
- a laminated board useful for manufacturing a wiring board having excellent reliability and a method for manufacturing a wiring board using the laminated board are provided.
- FIG. 1 is a cross-sectional view schematically showing an embodiment of a laminated board according to the present disclosure.
- 2 (a) to 2 (c) are cross-sectional views schematically showing a manufacturing process of a wiring board.
- 3A to 3C are cross-sectional views schematically showing a manufacturing process of a wiring board.
- 4 (a) to 4 (c) are cross-sectional views schematically showing a manufacturing process of a wiring board.
- FIG. 5 is a cross-sectional view schematically showing another embodiment of the laminated board according to the present disclosure.
- the term “layer” includes not only a structure having a shape formed on the entire surface but also a structure having a shape partially formed when observed as a plan view.
- a or B may include either A or B, and may include both.
- the term "process” is included in this term not only as an independent process but also as long as the intended action of the process is achieved even if it cannot be clearly distinguished from other processes. .. Further, the numerical range indicated by using "-" indicates a range including the numerical values before and after "-" as the minimum value and the maximum value, respectively.
- the content of each component in the composition is the total amount of the plurality of substances present in the composition when a plurality of substances corresponding to each component are present in the composition, unless otherwise specified. means.
- the exemplary materials may be used alone or in combination of two or more unless otherwise specified.
- the upper limit value or the lower limit value of the numerical range of one step may be replaced with the upper limit value or the lower limit value of the numerical range of another step.
- the upper limit value or the lower limit value of the numerical range may be replaced with the value shown in the examples.
- FIG. 1 is a cross-sectional view schematically showing a laminated board according to this embodiment.
- the laminated plate 5 shown in this figure includes a copper layer 1 having a thickness of 5 ⁇ m or less and a resin layer 3 provided on the surface of the copper layer 1.
- the laminated board 10 is used for manufacturing a wiring board for high frequencies having a frequency of 1 to 50 GHz (more preferably 10 to 50 GHz).
- the thickness of the copper layer 1 is 5 ⁇ m or less, and may be 3 ⁇ m or less. Since the thickness of the copper layer 1 is 5 ⁇ m or less, the etching time for forming the fine wiring can be shortened after the formation of the conductive portion 9a, and the etching amount can be suppressed (FIGS. 3 (c) and 4 (FIG. 4). a) See).
- a copper foil can be used as the copper layer 1 having a thickness of 5 ⁇ m or less.
- the lower limit of the thickness of the copper foil is, for example, 1.5 ⁇ m from the viewpoint of handleability.
- Copper foil of such a thickness is available on the market in a state of being laminated on a copper foil called a carrier via a release layer.
- Micro Thin (trademark) manufactured by Mitsui Mining & Smelting Co., Ltd. uses a copper foil with a thickness of 1.5 to 5 ⁇ m, a release layer, and a copper foil (carrier) with a thickness of 18 ⁇ m. It is configured.
- the copper layer 1 may be formed by electroless plating.
- the thickness range of the copper layer 1 that can be easily manufactured by electroless plating is, for example, 50 to 500 nm.
- the copper layer 1 can be formed by electroless plating.
- an acidic cleaner for example, MCD (trade name) manufactured by C. Uyemura & Co., Ltd.
- the surface is pickled with an aqueous sulfuric acid solution at 25 ° C.
- the surface is immersed in a predip solution (for example, MDP (table product name) manufactured by C. Uyemura & Co., Ltd.).
- the surface is immersed in an activator solution (manufactured by C. Uyemura & Co., Ltd., trade name: MAT) to attach a palladium catalyst.
- an activator solution manufactured by C. Uyemura & Co., Ltd., trade name: MAT
- the palladium catalyst is reduced using a reducer solution (for example, MAB (trade name) manufactured by C. Uyemura & Co., Ltd.).
- an accelerator solution for example, MEL (trade name) manufactured by C. Uyemura & Co., Ltd.
- an electroless copper plating solution for example, PEAV2 (trade name) manufactured by C. Uyemura & Co., Ltd.
- PEAV2 electroless copper plating solution
- the electroless copper plating layer formed as described above may be used as a seed layer, and a copper layer may be formed by electrolytic plating on the surface of the electroless copper plating layer. Electroless plating and electrolytic plating may be used in combination to form, for example, a copper layer 1 having a thickness of 1 to 5 ⁇ m.
- the resin layer 3 is provided in contact with the surface of the copper layer 1.
- the resin layer 3 has a water absorption rate of 1% or less after a highly accelerated life test (after being placed in an environment having a temperature of 130 ° C. and a relative humidity of 85% for 200 hours, hereinafter simply referred to as “after HAST”). ..
- a highly accelerated life test (after being placed in an environment having a temperature of 130 ° C. and a relative humidity of 85% for 200 hours, hereinafter simply referred to as “after HAST”).
- HAST water absorption rate of the resin layer 3 after HAST is 1% or less, it is possible to suppress the oxidation (generation of rust) of the copper layer 1 by the water contained in the resin layer 3.
- the water absorption rate of the resin layer 3 after HAST is preferably 0.5% or less, more preferably 0.2% or less.
- the lower limit of the water absorption rate is, for example, 0.2%.
- the material constituting the resin layer 3 preferably satisfies the following conditions for the 90 ° peel strength at the interface between the copper layer 1 and the resin layer 3 from the viewpoint of further improving the reliability of the wiring board having fine wiring.
- the 90 ° peel strength is measured for a sample prepared by cutting the laminated board 10 to a predetermined size.
- the 90 ° peel strength at the interface between the copper layer 1 and the resin layer 3 is 0.4 N / mm or more (for example, 0.5 to 1.2 N / mm).
- the 90 ° peel strength at the interface between the copper layer 1 and the resin layer 3 is 0.25 N / mm or more (for example, 0.4 to 1.2 N / mm).
- the rate of change in 90 ° peel strength before and after HAST is ⁇ 30 to 0% (more preferably ⁇ 10 to 0%).
- the adhesion (90 ° peel strength) at the interface between the copper layer 1 and the resin layer 3 roughens the surface of the copper layer 1 (the side in contact with the resin layer 3) to the extent that the high frequency transmission performance is not impaired, for example. It can be improved by doing so.
- an organic acid-based microetching agent manufactured by MEC Co., Ltd.
- the roughening treatment with a chemical the surface of the copper layer 1 (the side in contact with the resin layer 3) is appropriately exposed by irradiation with plasma using, for example, oxygen, argon or nitrogen as a gas type, or irradiation with ultraviolet rays. It may be roughened.
- the resin layer 3 preferably satisfies the following conditions from the viewpoint of suppressing the transmission loss of the wiring board for high frequencies.
- -The relative permittivity of the resin layer 3 at 10 GHz is 4.5 or less (more preferably 3.5 to 2.5).
- -The dielectric loss tangent of the resin layer 3 at 10 GHz is 0.05 or less (more preferably 0.04 to 0.03).
- the resin layer 3 is mainly composed of a resin composition, and may be composed of, for example, a resin composition and a glass cloth impregnated with this resin composition.
- the resin composition may be, for example, one having thermosetting property, thermoplasticity or photocuring property.
- the resin composition preferably contains a thermosetting resin composition.
- the resin layer 3 may contain a heat resistant resin (for example, an epoxy resin).
- the resin layer 3 is a thermosetting resin composition
- the resin layer 3 contains a silica filler.
- the content of the silica filler is, for example, 65% by mass or less, and may be 65 to 53% by mass.
- the content of the silica filler is, for example, 85% by volume or less, and may be 60 to 80% by volume, based on the total volume of the solid content contained in the thermosetting resin composition.
- the content of the silica filler is 80% by volume or less, the side wall of the via after laser via processing tends to be smoother and the via connection reliability tends to be improved as compared with the case where the content exceeds 80% by volume, while 60 volumes.
- it is% or more the warp of the wiring board tends to be suppressed as compared with the case where it is less than 60% by volume.
- prepregs E-705G, E-770G, HS-200 and LW-910G manufactured by Showa Denko Materials Co., Ltd. can be used as the resin layer 3. These prepregs are in a semi-cured state (B stage) and undergo a heat treatment to be in a cured state (C stage).
- the laminated board 5 is manufactured, for example, through the following steps. -A step of preparing the copper layer 1 laminated on the carrier via the release layer. -A step of preparing the resin layer 3 (for example, prepreg). -A step of peeling off the carrier after attaching the copper layer 1 to the surface of the resin layer 3.
- a method of manufacturing a wiring board according to the present embodiment will be described with reference to the drawings.
- the wiring board 20 shown in FIG. 4C is manufactured through the following steps.
- (A) A step of preparing a laminated board 10 including a copper layer 1, a resin layer 3, and a support substrate 7 in this order (see FIG. 2A).
- the laminated board 10 may be manufactured by preparing a laminated board 5 including a copper layer 1 and a resin layer 3 in advance and laminating the support substrate 7 on the laminated board 5, or the resin layer 3 and the support substrate.
- a laminated board provided with 7 may be prepared in advance, and the copper layer 1 may be laminated on the laminated board.
- a copper-clad laminate can be used, and a copper layer 7a is provided on the surface thereof.
- the opening H1 can be formed, for example, by irradiation with a laser. If a residue is found in the opening H1, a desmear treatment may be performed after the step (B).
- C A step of forming a seed layer 8 by electroless copper plating on the surface of the copper layer 1 and the side surface of the opening H1 (see FIG. 2C).
- the seed layer 8 is a feeding layer for performing electrolytic plating in the following step (E).
- a resist pattern 11 having an opening H2 (second opening) communicating with the opening H1 and a plurality of grooves G extending to the surface of the seed layer 8 is formed on the surface of the seed layer 8. Step (see FIG. 3A).
- (F) A step of peeling off the resist pattern 11 (see FIG. 3C).
- (G) A step of removing the seed layer 8 exposed by peeling the resist pattern 11 and removing the copper layer 1 exposed by removing the seed layer 8 (see FIG. 4A). By removing unnecessary portions of the seed layer 8 and the copper layer 1 by etching, for example, fine wiring is formed by the conductive portion 9a, the remaining portion 8a of the seed layer 8, and the remaining portion 1a of the copper layer 1.
- Ru. (H) A step of forming the resin layer 12 so as to cover the surface of the copper layer 7a, the fine wiring, and the conductive portion 9b (see FIG. 4B).
- the wiring board is completed by filling the via holes with a conductive material and finishing the surface.
- the present invention is not limited to the above embodiments.
- the aspect in which the copper layer 1 and the resin layer 3 are in direct contact with each other is exemplified, but a rust preventive layer may be provided between these layers.
- a rust preventive layer 2 is formed at the interface between the copper layer 1 and the resin layer 3.
- the rust preventive layer 2 can be formed by using, for example, a triazole compound or a silane coupling agent (see paragraph [0028] of Patent Document 1).
- the amount (% by mass) of the silica filler is a value based on the total mass of the resins contained in the thermosetting resin composition.
- the amount of silica filler shown in Table 1 is the amount (volume part) when the total volume of solids contained in the thermosetting resin composition is 100 parts by volume.
- Example 1 A single prepreg E-705G was laminated on the surface of the double-sided copper-clad laminate (MCL-E705G). Next, the prepreg and the microthin copper foil were bonded so that the surface of the prepreg and the surface of the ultrathin copper foil were in contact with each other. The laminated plate thus obtained was sandwiched between end plates and pressed. The pressing conditions were temperature: 200 ° C., pressure: 3.0 MPa, and time: 70 minutes. Then, only the carrier layer of the microthin copper foil was peeled off to obtain a laminated plate according to Example 1 having an ultrathin copper foil (thickness: 3 ⁇ m) as the outermost layer.
- Example 2 to 4 Except for the fact that E-770G, HS-200 or LW-910G was used as the prepreg instead of E-705G, the laminated boards according to Examples 2 to 4 were produced in the same manner as in Example 1.
- Example 5 The surface of the ultrathin copper foil of the microsin copper foil was treated with an organic acid-based microetching agent (CZ-8401, manufactured by MEC Co., Ltd.). The processing conditions were as follows. ⁇ Temperature: 25 °C ⁇ Time: 30 seconds
- one prepreg E-705G was laminated on the surface of the double-sided copper-clad laminate (MCL-E705G).
- the prepreg and the microthin copper foil were bonded so that the surface of the prepreg and the surface to be treated of the ultrathin copper foil were in contact with each other.
- the laminated plate thus obtained was sandwiched between end plates and pressed.
- the pressing conditions were temperature: 200 ° C., pressure: 3.0 MPa, and time: 70 minutes.
- only the carrier layer of the microthin copper foil was peeled off to obtain a laminated plate according to Example 5 having an ultrathin copper foil (thickness: 3 ⁇ m) as the outermost layer.
- Example 2 except that the surface of the ultrathin copper foil of the microthin copper foil was treated with an organic acid-based microetching agent (CZ-8401, manufactured by MEC Co., Ltd.) in the same manner as in Example 4. Laminated plates according to Examples 6 to 8 were produced in the same manner as in 4 to 4.
- CZ-8401 organic acid-based microetching agent
- Adhesion was evaluated for the laminated board according to the example as follows. That is, using a desktop peel tester (EZ-FX, manufactured by Shimadzu Corporation), the peel strength at the interface between the ultrathin copper foil and the prepreg can be determined under the conditions of a peel width of 10 mm, a peel angle of 90 °, and a peel speed of 10 mm / min. It was measured. Adhesion was evaluated for the laminated boards before and after the following moisture absorption heat treatment. The results are shown in Tables 2 and 3. (Hygroscopic heat treatment) The laminated board was put into an advanced accelerated life test device (EHS-222MD, manufactured by Espec Co., Ltd.) and treated at a temperature of 130 ° C.
- EHS-222MD advanced accelerated life test device
- a laminated board useful for manufacturing a wiring board having excellent reliability and a method for manufacturing a wiring board using the laminated board are provided.
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Abstract
Description
・銅層と樹脂層の界面の90°ピール強度が0.4N/mm以上である。
・高度加速寿命試験後において、銅層と樹脂層の界面の90°ピール強度が0.25N/mm以上である。
・高度加速寿命試験の前後における90°ピール強度の変化率が-30~0%である。
・厚さ5μm以下の銅層と、樹脂層と、支持基板とをこの順序で備え、温度130℃、相対湿度85%の環境に200時間にわたって置かれた後において、樹脂層の吸水率が1%以下である積層板を準備する工程。
・上記銅層の表面上に、無電解銅めっきによってシード層を形成する工程。
・上記シード層の表面上に、当該シード層の表面にまで至る溝部を有するレジストパターンを形成する工程。
・電解銅めっきによって、上記溝部に銅を含む導電材を充填する工程。
・厚さ5μm以下の銅層と、樹脂層と、支持基板とをこの順序で備え、温度130℃、相対湿度85%の環境に200時間にわたって置かれた後において、樹脂層の吸水率が1%以下である積層板を準備する工程。
・銅層及び樹脂層を貫通して支持基板の表面にまで至る第一の開口部を形成する工程。
・銅層の表面及び第一の開口部の側面に、無電解銅めっきによってシード層を形成する工程。
・シード層の表面上に、第一の開口部に連通する第二の開口部を有するレジストパターンを形成する工程。
・電解銅めっきによって、第一の開口部及び第二の開口部に銅を含む導電材を充填する工程。
図1は本実施形態に係る積層板を模式的に示す断面図である。この図に示す積層板5は、厚さ5μm以下の銅層1と、銅層1の表面上に設けられた樹脂層3とを備える。積層板10は、周波数1~50GHz(より好ましくは10~50GHz)の高周波向けの配線基板の製造に用いられるものである。
銅層1の厚さは、上記のとおり、5μm以下であり、3μm以下であってもよい。銅層1の厚さが5μm以下であることで、導電部9aの形成後、微細配線形成のためのエッチング時間が短時間で済み、エッチング量も抑制できる(図3(c)及び図4(a)参照)。厚さ5μm以下の銅層1として、例えば、銅箔を使用できる。銅箔の厚さの下限は、取り扱い性の観点から、例えば、1.5μmである。このような厚さの銅箔は、剥離層を介してキャリアと呼ばれる銅箔に積層された状態で市場から入手可能である。例えば、三井金属鉱業株式会社製のマイクロ・シン(Micro Thin(トレードマーク))は、厚さが1.5~5μmの銅箔と、剥離層と、厚さ18μmの銅箔(キャリア)とによって構成されている。
本実施形態において、樹脂層3は、銅層1の表面に接した状態で設けられている。樹脂層3は、高度加速寿命試験後(温度130℃、相対湿度85%の環境に200時間にわたって置かれた後、以下、単に「HAST後」という。)において、吸水率が1%以下である。HAST後の樹脂層3の吸水率が1%以下であることで、樹脂層3に含まれる水分による銅層1の酸化(錆の発生)を抑制することができる。銅層1の酸化をより一層高度の抑制する観点から、樹脂層3のHAST後における吸水率は、好ましくは0.5%以下であり、より好ましくは0.2%以下である。なお、この吸水率の下限値は、例えば、0.2%である。
・銅層1と樹脂層3の界面の90°ピール強度が0.4N/mm以上(例えば、0.5~1.2N/mm)である。
・HAST後において、銅層1と樹脂層3の界面の90°ピール強度が0.25N/mm以上(例えば、0.4~1.2N/mm)である。
・HASTの前後における90°ピール強度の変化率が-30~0%(より好ましくは-10~0%)である。
・樹脂層3の10GHzでの比誘電率が4.5以下(より好ましくは3.5~2.5)であること。
・樹脂層3の10GHzでの誘電正接が0.05以下(より好ましくは0.04~0.03)であること。
積層板5は、例えば、以下の工程を経て製造される。
・剥離層を介してキャリアに積層された銅層1を準備する工程。
・樹脂層3(例えば、プリプレグ)を準備する工程。
・樹脂層3の表面に銅層1を貼り付けた後、キャリアを剥離する工程。
図面を参照しながら、本実施形態に係る配線基板の製造方法について説明する。図4(c)に示す配線基板20は以下の工程を経て製造される。
(A)銅層1と、樹脂層3と、支持基板7とをこの順序で備える積層板10を準備する工程(図2(a)参照)。この積層板10は、銅層1と樹脂層3とを備える積層板5を先に準備し、積層板5に支持基板7を積層させることによって作製してもよいし、樹脂層3と支持基板7とを備える積層板を先に準備し、この積層板に銅層1を積層させることによって作製してもよい。支持基板7として、例えば、銅張積層板を使用することができ、その表面に銅層7aを有する。
(B)銅層1及び樹脂層3を貫通して支持基板7の表面(銅層7a)にまで至る開口部H1(第一の開口部)を形成する工程(図2(b)参照)。開口部H1は、例えば、レーザの照射によって形成することができる。開口部H1に残渣が認められる場合は、(B)工程後にデスミア処理を実施すればよい。
(C)銅層1の表面及び開口部H1の側面に、無電解銅めっきによってシード層8を形成する工程(図2(c)参照)。シード層8は、以下の(E)工程において電解めっきを実施するための給電層である。
(D)シード層8の表面上に、開口部H1に連通する開口部H2(第二の開口部)と、シード層8の表面にまで至る複数の溝部Gとを有するレジストパターン11を形成する工程(図3(a)参照)。
(E)電解銅めっきによって開口部H2及び溝部Gに銅を含む導電材を充填する工程(図3(b)参照)。
電解銅めっきによって溝部Gに銅を含む導電材が充填されることで、微細配線の一部を構成する導電部9aが形成される。電解銅めっきによって開口部H1,H2に銅を含む導電材が充填されることで、導電部9b(層間の導通部の一部)が形成される。
(G)レジストパターン11の剥離によって露出したシード層8を除去するとともに、シード層8の除去によって露出した銅層1を除去する工程(図4(a)参照)。
シード層8及び銅層1の不要部分をそれぞれ、例えば、エッチングで除去することで、導電部9aと、シード層8の残存部8aと、銅層1の残存部1aとによって微細配線が構成される。
(H)銅層7aの表面、微細配線及び導電部9bを覆うように樹脂層12を形成する工程(図4(b)参照)。
(I)樹脂層12に導電部9bにまで至る開口部H3(第三の開口部)を形成する工程(図4(c)参照)。
開口部H1,H2,H3によってビアホールが形成される。ビアホールに導電材を充填するとともに表面の仕上げ加工などを経て配線基板が完成する。
・マイクロシン銅箔(三井金属鉱業株式会社製)
極薄銅箔の厚さ:3μm
キャリア層の厚さ:18μm
・両面銅張積層板:MCL-E705G(昭和電工マテリアルズ株式会社製)
銅層の厚さ:12μm
樹脂層の厚さ:25μm
銅層の厚さ:12μm
・表1に示す四種のプリプレグ(いずれも昭和電工マテリアルズ株式会社製)
吸水率(%)=100×[(HAST後の質量)-(HAST前の質量)]/(HAST前の質量)
上記両面銅張積層板(MCL-E705G)の表面に、一枚のプリプレグE-705Gを重ねた。次いで、このプリプレグの表面と、上記極薄銅箔の表面とが接するように、プリプレグとマイクロシン銅箔を貼り合わせた。このようにして得た積層板を鏡板で挟んだ状態で、プレス加工をした。プレス条件は、温度:200℃、圧力:3.0MPa、時間:70分とした。その後、マイクロシン銅箔のキャリア層のみを剥離し、最外層に極薄銅箔(厚さ:3μm)を有する実施例1に係る積層板を得た。
プリプレグとして、E-705Gの代わりに、E-770G、HS-200又はLW-910Gを使用したことの他は、実施例1と同様にして実施例2~4に係る積層板をそれぞれ作製した。
上記マイクロシン銅箔の極薄銅箔の表面を有機酸系マイクロエッチング剤(CZ-8401、メック株式会社製)によって処理した。処理条件は、以下のとおりとした。
・温度:25℃
・時間:30秒
マイクロシン銅箔の極薄銅箔の表面に対し、実施例4と同様にして、有機酸系マイクロエッチング剤(CZ-8401、メック株式会社製)による処理を施したことの他は実施例2~4と同様にして実施例6~8に係る積層板をそれぞれ作製した。
(吸湿加熱処理)
高度加速寿命試験装置(EHS-222MD、エスペック株式会社製)に積層板を投入し、温度130℃、相対湿度85%で100時間処理した。以下の式により、HAST前後の密着性の変化率を算出した。
90°ピール強度の変化率(%)=100×[(HAST後のピール強度)-(HAST前のピール強度)]/(HAST前のピール強度)
Claims (12)
- 厚さ5μm以下の銅層と、
前記銅層の表面上に設けられた樹脂層と、
を備え、
温度130℃、相対湿度85%の環境に200時間にわたって置かれた後において、前記樹脂層の吸水率が1%以下である、積層板。 - 前記銅層と前記樹脂層の界面の90°ピール強度が0.4N/mm以上である、請求項1に記載の積層板。
- 温度130℃、相対湿度85%の環境に200時間にわたって置かれた後において、前記銅層と前記樹脂層の界面の90°ピール強度が0.25N/mm以上である、請求項1又は2に記載の積層板。
- 温度130℃、相対湿度85%の環境に200時間にわたって当該積層板の試料を置いて実施される高度加速寿命試験の前後における90°ピール強度の変化率が-30~0%である、請求項1~3のいずれか一項に記載の積層板。
- 前記樹脂層と銅層との間に、防錆層を更に備える、請求項1~4のいずれか一項に記載の積層板。
- 前記樹脂層の10GHzでの比誘電率が4.5以下である、請求項1~5のいずれか一項に記載の積層板。
- 前記樹脂層の10GHzでの誘電正接が0.05以下である、請求項1~6のいずれか一項に記載の積層板。
- 前記樹脂層が熱硬化性樹脂組成物を含む、請求項1~7のいずれか一項に記載の積層板。
- 前記樹脂層は、前記熱硬化性樹脂組成物が含浸したガラスクロスを含む、請求項8に記載の積層板。
- 前記熱硬化性樹脂組成物がシリカフィラを含み、
前記熱硬化性樹脂組成物に含まれる樹脂の合計質量を基準として、前記シリカフィラの含有量が65質量%以下である、請求項8又は9に記載の積層板。 - 厚さ5μm以下の銅層と、樹脂層と、支持基板とをこの順序で備え、温度130℃、相対湿度85%の環境に200時間にわたって置かれた後において、前記樹脂層の吸水率が1%以下である積層板を準備する工程と、
前記銅層の表面上に、無電解銅めっきによってシード層を形成する工程と、
前記シード層の表面上に、前記シード層の表面にまで至る溝部を有するレジストパターンを形成する工程と、
電解銅めっきによって、前記溝部に銅を含む導電材を充填する工程と、
を含む、配線基板の製造方法。 - 厚さ5μm以下の銅層と、樹脂層と、支持基板とをこの順序で備え、温度130℃、相対湿度85%の環境に200時間にわたって置かれた後において、前記樹脂層の吸水率が1%以下である積層板を準備する工程と、
前記銅層及び前記樹脂層を貫通して前記支持基板の表面にまで至る第一の開口部を形成する工程と、
前記銅層の表面及び前記第一の開口部の側面に、無電解銅めっきによってシード層を形成する工程と、
前記シード層の表面上に、前記第一の開口部に連通する第二の開口部を有するレジストパターンを形成する工程と、
電解銅めっきによって、前記第一の開口部及び前記第二の開口部に銅を含む導電材を充填する工程と、
を含む、配線基板の製造方法。
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CN101472407B (zh) * | 2007-12-25 | 2012-01-25 | 日本特殊陶业株式会社 | 布线基板及其制造方法 |
JP5580135B2 (ja) * | 2010-08-03 | 2014-08-27 | 三井金属鉱業株式会社 | プリント配線板の製造方法及びプリント配線板 |
JP5938948B2 (ja) * | 2012-02-29 | 2016-06-22 | 日立化成株式会社 | 半導体チップ搭載用基板及びその製造方法 |
JP6455036B2 (ja) * | 2014-09-10 | 2019-01-23 | 日立化成株式会社 | 半導体装置の製造方法 |
JP6950732B2 (ja) * | 2015-08-07 | 2021-10-13 | 味の素株式会社 | 樹脂組成物 |
JP2018160636A (ja) * | 2017-03-24 | 2018-10-11 | 住友金属鉱山株式会社 | 高周波基板 |
JP6934638B2 (ja) * | 2017-12-21 | 2021-09-15 | パナソニックIpマネジメント株式会社 | 半導体パッケージ及びプリント回路板 |
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JP2000136995A (ja) * | 1998-10-30 | 2000-05-16 | Fujitsu Ltd | 樹脂回路基板の信頼性評価方法 |
WO2015141719A1 (ja) * | 2014-03-20 | 2015-09-24 | 日本ゼオン株式会社 | 感放射線樹脂組成物及び電子部品 |
JP2017101152A (ja) * | 2015-12-02 | 2017-06-08 | 株式会社プリンテック | 変性ポリイミド樹脂組成物およびその製造方法、並びにそれを用いたプリプレグおよび積層板 |
JP2019067980A (ja) * | 2017-10-03 | 2019-04-25 | 信越化学工業株式会社 | 半導体装置及びその製造方法、並びに積層体 |
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