WO2022097456A1 - 気相成長装置 - Google Patents

気相成長装置 Download PDF

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Publication number
WO2022097456A1
WO2022097456A1 PCT/JP2021/038355 JP2021038355W WO2022097456A1 WO 2022097456 A1 WO2022097456 A1 WO 2022097456A1 JP 2021038355 W JP2021038355 W JP 2021038355W WO 2022097456 A1 WO2022097456 A1 WO 2022097456A1
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WO
WIPO (PCT)
Prior art keywords
wafer
holder
substrate
susceptor
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/038355
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English (en)
French (fr)
Japanese (ja)
Inventor
佳明 醍醐
義和 森山
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Nuflare Technology Inc
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Nuflare Technology Inc
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Filing date
Publication date
Application filed by Nuflare Technology Inc filed Critical Nuflare Technology Inc
Priority to KR1020237013987A priority Critical patent/KR102669071B1/ko
Priority to JP2022560697A priority patent/JP7440660B2/ja
Priority to EP21889009.3A priority patent/EP4243054A4/en
Publication of WO2022097456A1 publication Critical patent/WO2022097456A1/ja
Priority to US18/136,461 priority patent/US20230257904A1/en
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/32—Carbides
    • C23C16/325—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4585—Devices at or outside the perimeter of the substrate support, e.g. clamping rings, shrouds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
    • C30B23/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B35/00—Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0434—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7614—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of individual support members, e.g. support posts or protrusions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7626—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3444—P-type

Definitions

  • the present invention relates to a vapor phase growth apparatus that supplies a gas to the surface of a substrate to form a film.
  • an epitaxial growth technique for forming a single crystal film by vapor phase growth on the surface of a substrate.
  • the substrate is placed in a holder in a reaction chamber held at normal pressure or reduced pressure.
  • the process gas containing the raw material of the membrane is supplied to the reaction chamber via the buffer chamber at the upper part of the reaction chamber.
  • a thermal reaction of the process gas occurs on the surface of the substrate, and an epitaxial single crystal film is formed on the surface of the substrate.
  • the characteristics of the epitaxial single crystal film formed on the surface of the substrate depend on the temperature of the substrate. Therefore, in order to improve the uniformity of the characteristics of the film formed on the substrate, it is desired to improve the uniformity of the temperature of the surface of the substrate. In particular, in the case of a film formed at a high temperature such as a silicon carbide film, it becomes difficult to maintain the temperature uniformity of the substrate surface.
  • Patent Document 1 describes a vapor phase growth apparatus in which a support portion is provided on a susceptor that supports the substrate in order to uniformly heat the substrate.
  • the problem to be solved by the present invention is to provide a vapor phase growth apparatus capable of improving the temperature uniformity of the substrate.
  • the gas phase growth apparatus is a first reaction chamber, a holder provided in the reaction chamber on which a substrate is placed, and a first holder provided in the reaction chamber and located below the holder.
  • the holder is provided with a second heater provided in the reaction chamber and located above the holder, and the holder surrounds the inner region and the inner region and the substrate is placed on the inner region.
  • the substrate was placed on the holder so that the distance from the inner peripheral end of the region was 6 mm or less, the width of the support portion was 3 mm or more, and the center of the substrate coincided with the center of the holder.
  • the radius of the substrate is defined as R1
  • the radius of the outer peripheral end of the arc portion is R4
  • the distance between the outer peripheral end of the substrate and the inner peripheral end of the outer region facing the arc portion is defined as D1.
  • the schematic sectional view of the vapor phase growth apparatus of 1st Embodiment The schematic diagram of the holder of 1st Embodiment.
  • the schematic diagram of the holder of 1st Embodiment An enlarged schematic cross-sectional view of the holder of the first embodiment.
  • the schematic diagram of the holder of the 1st comparative example The schematic diagram of the holder of the 1st comparative example.
  • Explanatory drawing of the 2nd problem of the holder of the 1st comparative example Explanatory drawing of operation and effect of 1st Embodiment.
  • Explanatory drawing of operation and effect of 1st Embodiment Explanatory drawing of operation and effect of 1st Embodiment.
  • FIG. 6 is an enlarged schematic cross-sectional view of the holder of the fourth embodiment.
  • FIG. 6 is an enlarged schematic cross-sectional view of the holder of the fourth embodiment.
  • FIG. 5 is an enlarged schematic cross-sectional view of the holder of the fifth embodiment.
  • the explanatory view of the operation and effect of the 8th embodiment The explanatory view of the operation and effect of the 8th embodiment.
  • the direction of gravity in a state where the vapor phase growth device is installed so that a film can be formed is defined as "downward", and the opposite direction is defined as “upper”. Therefore, “lower” means the position in the direction of gravity with respect to the reference, and “downward” means the direction of gravity with respect to the reference.
  • the “upper part” means a position in the direction opposite to the gravitational direction with respect to the reference, and the “upper” means the direction opposite to the gravitational direction with respect to the reference.
  • the “vertical direction” is the direction of gravity.
  • the “process gas” is a general term for gases used for forming a film, and includes, for example, a source gas, an assist gas, a dopant gas, a carrier gas, and a mixed gas thereof. It is a concept.
  • the gas phase growth apparatus of the first embodiment includes a reaction chamber, a holder provided in the reaction chamber on which the substrate is placed, and a first heater provided in the reaction chamber and located below the holder.
  • a second heater, provided in the reaction chamber and located above the holder, the holder comprises an inner region and an annular outer region surrounding the inner region and surrounding the substrate when the substrate is placed.
  • the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region is 6 mm or less, including a support portion provided on the inner region and having an annular arc portion capable of supporting the lower surface of the substrate.
  • the holder defines the radius of the film quality guarantee region of the substrate as R2 and the radius of the inner peripheral end of the arc portion as R3, and satisfies the following equations 2 and 3.
  • FIG. 1 is a schematic cross-sectional view of the vapor phase growth apparatus of the first embodiment.
  • the vapor phase growth apparatus 100 of the first embodiment is, for example, a single-wafer type epitaxial growth apparatus in which a single crystal silicon carbide film is epitaxially grown on a single crystal silicon carbide substrate.
  • the vapor phase growth apparatus 100 of the first embodiment includes a reaction chamber 10 and a buffer chamber 13.
  • the reaction chamber 10 includes a susceptor 14 (holder), a rotating body 16, a rotating shaft 18, a rotating drive mechanism 20, a first heater 22, a reflector 28, a support column 30, a fixed base 32, a fixed shaft 34, a hood 40, and a second.
  • the heater 42, the gas discharge port 44, and the gas conduit 53 are provided.
  • the buffer chamber 13 includes a partition plate 39 and a gas supply port 85.
  • the reaction chamber 10 is made of, for example, stainless steel.
  • the reaction chamber 10 has a cylindrical wall.
  • a silicon carbide film is formed on the wafer W in the reaction chamber 10.
  • Wafer W is an example of a substrate.
  • the wafer W is, for example, a semiconductor wafer.
  • the wafer W is, for example, a single crystal silicon carbide wafer.
  • the susceptor 14 is provided in the reaction chamber 10.
  • a wafer W can be placed on the susceptor 14.
  • the susceptor 14 is an example of a holder.
  • the susceptor 14 is formed of a highly heat-resistant material such as silicon carbide or graphite, or graphite coated with silicon carbide, tantalum carbide, pyrolytic graphite or the like.
  • the susceptor 14 is fixed to the upper part of the rotating body 16.
  • the rotating body 16 is fixed to the rotating shaft 18.
  • the susceptor 14 is indirectly fixed to the rotating shaft 18.
  • the rotation shaft 18 can be rotated by the rotation drive mechanism 20. It is possible to rotate the susceptor 14 by rotating the rotating shaft 18. By rotating the susceptor 14, the wafer W placed on the susceptor 14 can be rotated.
  • the wafer W can be rotated at a rotation speed of 300 rpm or more and 3000 rpm or less.
  • the rotation drive mechanism 20 is composed of, for example, a motor and a bearing.
  • the first heater 22 is provided below the susceptor 14.
  • the first heater 22 is provided in the rotating body 16.
  • the first heater 22 heats the wafer W held by the susceptor 14 from below.
  • the first heater 22 is, for example, a resistance heating heater.
  • the first heater 22 has, for example, a disk shape with a comb-shaped pattern.
  • the reflector 28 is provided under the first heater 22.
  • a first heater 22 is provided between the reflector 28 and the susceptor 14.
  • the reflector 28 reflects the heat radiated downward from the first heater 22 to improve the heating efficiency of the wafer W. Further, the reflector 28 prevents the members below the reflector 28 from being heated.
  • the reflector 28 has, for example, a disk shape.
  • the reflector 28 is formed of a highly heat-resistant material such as silicon carbide or graphite, or graphite coated with silicon carbide, tantalum carbide, pyrolytic graphite or the like.
  • the reflector 28 is fixed to the fixing base 32 by, for example, a plurality of support columns 30.
  • the fixed base 32 is supported by, for example, a fixed shaft 34.
  • a push-up pin (not shown) is provided in the rotating body 16 in order to attach / detach the susceptor 14 from the rotating body 16.
  • the push-up pin penetrates, for example, the reflector 28 and the first heater 22.
  • the second heater 42 is provided between the hood 40 and the inner wall of the reaction chamber 10.
  • the second heater 42 is located above the susceptor 14.
  • the second heater 42 heats the wafer W held by the susceptor 14 from above. By heating the wafer W with the second heater 42 in addition to the first heater 22, the wafer W can be heated to a temperature required for the growth of the silicon carbide film, for example, 1500 ° C. or higher. It becomes.
  • the second heater 42 is, for example, a resistance heating heater.
  • the hood 40 has, for example, a cylindrical shape.
  • the hood 40 has a function of preventing the first process gas G1 and the second process gas G2 from coming into contact with the second heater 42.
  • the hood 40 is formed of a highly heat-resistant material such as graphite or graphite coated with silicon carbide.
  • the gas discharge port 44 is provided at the bottom of the reaction chamber 10.
  • the gas discharge port 44 discharges the surplus by-product after the source gas reacts on the surface of the wafer W and the surplus process gas to the outside of the reaction chamber 10.
  • the gas outlet 44 is connected to, for example, a vacuum pump (not shown).
  • the reaction chamber 10 is provided with a susceptor inlet / outlet and a gate valve (not shown).
  • the susceptor 14 on which the wafer W is placed can be carried in or out of the reaction chamber 10 by the susceptor inlet / outlet and the gate valve.
  • the buffer chamber 13 is provided above the reaction chamber 10.
  • the buffer chamber 13 is provided with a gas supply port 85 for introducing the process gas G0.
  • the process gas G0 introduced from the gas supply port 85 is filled in the buffer chamber 13.
  • the process gas G0 is, for example, a silicon (Si) source gas, a carbon (C) source gas, an n-type impurity dopant gas, a p-type impurity dopant gas, an assist gas that suppresses silicon clustering, and a carrier. It is a mixed gas containing gas.
  • the source gas for silicon is, for example, silane (SiH 4 ).
  • the carbon source gas is, for example, propane (C 3 H 8 ).
  • the dopant gas of the n-type impurity is, for example, nitrogen gas.
  • the dopant gas for the p-type impurity is, for example, trimethylaluminum (TMA).
  • the assist gas is, for example, hydrogen chloride (HCl).
  • the carrier gas is, for example, argon gas or hydrogen gas.
  • a plurality of gas conduits 53 are provided between the buffer chamber 13 and the reaction chamber 10.
  • the gas conduit 53 extends from the buffer chamber 13 in the first direction towards the reaction chamber 10.
  • the plurality of gas conduits 53 supply the process gas G0 from the buffer chamber 13 to the reaction chamber 10.
  • FIG. 2 is a schematic diagram of the holder of the first embodiment. 2 (a) is a top view, and FIG. 2 (b) is a cross-sectional view taken along the line AA'of FIG. 2 (a).
  • the susceptor 14 has a center C2 (second center).
  • the center C2 is, for example, the center position of a circle forming the outer edge of the susceptor 14.
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the inner region 50 has a disk shape.
  • the outer region 52 is annular.
  • FIG. 2 shows a case where the support portion 54 has a circular shape. That is, FIG. 2 shows a case where the entire support portion 54 is an arc portion.
  • the annular support portion 54 is provided at a distance from the outer region 52.
  • the support portion 54 can support the lower surface of the wafer W when the wafer W is placed on the susceptor 14.
  • the radius of the inner peripheral end of the support portion 54 is R3.
  • the radius of the outer peripheral end of the support portion 54 is R4.
  • FIG. 3 is a schematic diagram of the holder of the first embodiment.
  • 3A is a top view corresponding to FIG. 2A
  • FIG. 3B is a cross-sectional view corresponding to FIG. 2B.
  • FIG. 3 is a diagram showing a state in which the wafer W is placed on the susceptor 14.
  • FIG. 3 shows a case where the center C1 (first center) of the wafer W and the center C2 (second center) of the susceptor 14 coincide with each other.
  • the wafer W has a film quality guaranteed area Wa and a film quality non-guaranteed area Wb.
  • the film quality is, for example, a film thickness, a carrier concentration, a surface roughness, a defect density, a carrier lifetime, and the like.
  • the film quality guarantee area Wa is an area that guarantees that, for example, the film thickness, the carrier concentration, the surface roughness, the defect density, the carrier lifetime, and the like satisfy specific specifications on the wafer W, and is usually used. Is provided on the center side on the wafer W.
  • the film quality non-guaranteed region Wb is a region that does not guarantee that, for example, the film thickness, carrier concentration, surface roughness, defect density, carrier lifetime, etc., meet specific specifications on the wafer, and is usually a wafer. It is provided on the upper outer peripheral side.
  • the film quality guarantee region Wa may be determined for each film quality such as film thickness, carrier concentration, surface roughness, defect density, and carrier lifetime. Also in the present specification, it is not necessary that the film quality guarantee region Wa is the same for all the film qualities, and it is sufficient that the film quality guarantee region Wa is defined for at least one of the film qualities.
  • the radius of the wafer W be R1.
  • the radius of the film quality guarantee region Wa is R2.
  • the difference between R1 and R2 is, for example, 3 mm or more and 6 mm or less.
  • the distance between the outer peripheral edge of the wafer W and the inner peripheral edge of the outer region 52 (D1 in FIG. 3B) is, for example, 0.5 mm or more and 3 mm or less.
  • the radius R3 of the inner peripheral end of the support portion 54 is, for example, 85% or more of the radius R1 of the wafer W.
  • FIG. 4 is an enlarged schematic cross-sectional view of the holder of the first embodiment.
  • FIG. 4 is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52.
  • FIG. 4A shows a state in which the wafer W is not placed
  • FIG. 4B shows a state in which the center C1 (first center) of the wafer W and the center C2 (second center) of the susceptor 14 coincide with each other. The state in which the wafer W is placed is shown.
  • the position of the upper surface 52s of the outer region 52 is above the position of the upper surface 54s of the support portion 54.
  • the position of the upper surface 52s of the outer region 52 is, for example, above the position of the surface of the wafer W.
  • the inner peripheral end of the outer region 52 (E3 in FIG. 4A) and the support portion 54 are separated from each other.
  • the distance between the outer peripheral end of the support portion 54 (E2 in FIG. 4A) and the inner peripheral end E3 of the outer region 52 (X in FIG. 4A) is, for example, 2 mm or more and 6 mm or less.
  • the width of the support portion 54 (w in FIG. 4A) is, for example, 3 mm or more and 10 mm or less.
  • the width w of the support portion 54 is equal to the difference between the radius R4 of the outer peripheral end E2 of the support portion 54 and the radius R3 of the inner peripheral end (E1 in FIG. 4A) of the support portion 54.
  • the height of the support portion 54 (h in FIG. 4A) is, for example, 0.5 mm or more and 3 mm or less.
  • the height h of the support portion 54 is, for example, equal to or smaller than the width w of the support portion 54.
  • the end portion (Ex in FIG. 4 (b)) of the film quality guarantee region Wa is on the support portion 54.
  • the end portion Ex of the film quality guarantee region Wa is located between the inner peripheral end E1 of the support portion 54 and the outer peripheral end E2 of the support portion 54.
  • the susceptor 14 on which the wafer W is placed is introduced into the reaction chamber 10.
  • the susceptor 14 is placed on the rotating body 16.
  • the wafer W is heated by using the first heater 22 and the second heater 42.
  • the wafer W is heated to 1500 ° C. or higher.
  • the process gas G0 is supplied from the buffer chamber 13 to the reaction chamber 10 via the plurality of gas conduits 53.
  • the rotating body 16 is rotated to rotate the susceptor 14.
  • the wafer W placed on the susceptor 14 rotates together with the susceptor 14.
  • a silicon carbide film is formed on the surface of the rotating wafer W.
  • FIG. 5 is a schematic diagram of the holder of the first comparative example. 5 (a) is a top view, and FIG. 5 (b) is a cross-sectional view taken along the line BB'of FIG. 5 (a).
  • the susceptor 64 of the first comparative example has a center C2.
  • the susceptor 64 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the susceptor 64 of the first comparative example is different from the susceptor 14 of the first embodiment in that the support portion 54 is not provided.
  • FIG. 6 is a schematic diagram of the holder of the first comparative example. 6 (a) is a top view corresponding to FIG. 5 (a), and FIG. 6 (b) is a sectional view corresponding to FIG. 5 (b).
  • FIG. 6 is a diagram showing a state in which the wafer W is placed on the susceptor 64.
  • FIG. 6 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 64 coincide with each other.
  • the entire back surface of the wafer W is in contact with the front surface of the susceptor 64.
  • FIG. 7 is an explanatory diagram of the first problem of the holder of the first comparative example.
  • FIG. 7 is a schematic view of the holder of the first comparative example.
  • 7 (a) is a top view corresponding to FIG. 6 (a)
  • FIG. 6 (b) is a sectional view corresponding to FIG. 6 (b).
  • FIG. 7 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 64 do not match. In other words, FIG. 7 shows a case where the wafer W is displaced from the center C2 of the susceptor 64.
  • the by-product 66 may be formed in the region of the inner region 50 of the susceptor 64 that is not covered by the wafer W.
  • the by-product 66 contains, for example, silicon carbide.
  • the by-product 66 adheres to the back surface of the wafer W. If the by-product 66 adheres to the back surface of the wafer W, the flatness of the back surface of the wafer W is impaired, which may cause a problem in the manufacturing process after forming the silicon carbide film. For example, defocus may occur in the photolithography process.
  • the phenomenon that the wafer W rides on the by-product 66 is that the wafer W shifts on the susceptor during the formation of the silicon carbide film due to the centrifugal force acting on the rotating wafer W, or the transfer varies. This is caused by the mounting position of the wafer W on the susceptor being different between the wafers.
  • FIG. 8 is an explanatory diagram of the second problem of the holder of the first comparative example.
  • FIG. 8 is a schematic view of the holder of the first comparative example. 8 (a) is a top view corresponding to FIG. 6 (a), and FIG. 8 (b) is a sectional view corresponding to FIG. 6 (b).
  • the wafer W When forming a silicon carbide film on the surface of the wafer W, as shown in FIG. 8B, the wafer W may be deformed into a concave shape due to the temperature difference between the front surface and the back surface of the wafer W.
  • the process gas may sneak into the gap formed between the back surface of the wafer W and the surface of the inner region 50 of the susceptor 64, and the by-product 66 may be formed on the surface of the inner region 50 of the susceptor 64.
  • a silicon carbide film may be formed directly on the back surface of the wafer W.
  • the by-product 66 formed on the surface of the inner region 50 of the susceptor 64 adheres to the back surface of the wafer W. If the by-product 66 adheres to the back surface of the wafer W, the flatness of the back surface of the wafer W is impaired, which may cause a problem in the manufacturing process after forming the silicon carbide film. Further, even when the silicon carbide film is directly formed on the back surface of the wafer W, the flatness of the back surface of the wafer W is impaired without forming a flat film, which may cause a problem in the manufacturing process after the silicon carbide film is formed. There is.
  • the back surface of the wafer W and the support portion 54 are in point contact with each other, especially on the center side of the wafer W, and the wafer W does not follow the rotation of the susceptor 64 or the wafer.
  • the central side of the W may be positively heated, which may lead to deterioration of the temperature distribution of the wafer W.
  • FIG. 8 shows an example in which the center C1 of the wafer W and the center C2 of the susceptor 64 coincide with each other. If the center C1 of the wafer W and the center C2 of the susceptor 64 do not match, in other words, even if the wafer W deviates from the center C2 of the susceptor 64, it is the same as when the center C1 of the wafer W and the center C2 of the susceptor 64 match. May cause problems.
  • FIG. 9 is an explanatory diagram of the operation and effect of the first embodiment.
  • FIG. 9 is a schematic view of the holder of the first embodiment.
  • 9 (a) is a top view and
  • FIG. 9 (b) is a cross-sectional view.
  • 9 (b) is a cross-sectional view corresponding to FIG. 3 (b).
  • FIG. 9 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 14 do not match. In other words, FIG. 9 shows a case where the wafer W is displaced from the center C2 of the susceptor 14.
  • the wafer W is supported by the support portion 54. Therefore, even if the by-product 66 is formed in the region of the inner region 50 of the susceptor 64 that is not covered by the wafer W, the by-product 66 and the back surface of the wafer W do not come into contact with each other. Therefore, as in the first comparative example, it is possible to prevent the uniformity of the film quality of the silicon carbide film from being lowered by the wafer W riding on the by-product 66.
  • the by-product 66 since the wafer W rides on the by-product 66, the by-product 66 does not adhere to the back surface of the wafer W. Therefore, it is possible to prevent problems from occurring in the manufacturing process after forming the silicon carbide film.
  • FIG. 10 is an explanatory diagram of the operation and effect of the first embodiment.
  • FIG. 10 is a schematic view of the holder of the first embodiment. 10 (a) is a top view and FIG. 10 (b) is a cross-sectional view. 10 (b) is a cross-sectional view corresponding to FIG. 3 (b).
  • the wafer W When forming the silicon carbide film on the surface of the wafer W, as shown in FIG. 10B, the wafer W may be deformed into a concave shape due to the temperature difference between the front surface and the back surface of the wafer W.
  • the wafer W is supported by the support portion 54. Therefore, a gap around which the process gas circulates is unlikely to occur between the back surface of the wafer W and the susceptor 14. Therefore, even when the wafer W is deformed into a concave shape, it suppresses the wraparound of the process gas between the back surface of the wafer W and the front surface of the susceptor 64 as in the first comparative example.
  • the adhesion of the by-product 66 formed on the back surface of the wafer W is also suppressed. Further, the formation of the silicon carbide film directly on the back surface of the wafer W is also suppressed. Therefore, it is possible to prevent problems from occurring in the manufacturing process after forming the silicon carbide film.
  • FIG. 10 shows an example in which the center C1 of the wafer W and the center C2 of the susceptor 14 coincide with each other. If the center C1 of the wafer W and the center C2 of the susceptor 14 do not match, in other words, even if the wafer W deviates from the center C2 of the susceptor 14, the center C1 of the wafer W and the center C2 of the susceptor 14 match. The effect of is obtained.
  • FIG. 11 is an explanatory diagram of the operation and effect of the first embodiment.
  • FIG. 11 is a schematic view of the holder of the first embodiment. 11 (a) is a top view, and FIG. 11 (b) is a cross-sectional view. 11 (b) is a cross-sectional view corresponding to FIG. 3 (b).
  • FIG. 11 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 14 do not match. In other words, FIG. 11 shows a case where the wafer W is displaced from the center C2 of the susceptor 14. FIG. 11 shows a case where the center C1 of the wafer W is displaced from the center C2 of the susceptor 14 to the right in the figure.
  • FIG. 12 is an explanatory diagram of the operation and effect of the first embodiment.
  • FIG. 12 is a schematic view of the holder of the first embodiment. 12 (a) is a top view, and FIG. 12 (b) is a cross-sectional view. 12 (b) is a cross-sectional view corresponding to FIG. 3 (b).
  • FIG. 12 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 14 do not match.
  • FIG. 12 shows a case where the wafer W is displaced from the center C2 of the susceptor 14.
  • FIG. 12 shows a case where the center C1 of the wafer W is displaced from the center C2 of the susceptor 14 to the left in the figure.
  • Equation 1 even when the center C1 of the wafer W is deviated from the center C2 of the susceptor 14 by D1 in one direction, the end portion of the wafer W opposite to the deviating direction is the outer periphery of the support portion 54. It means that it is located on the outer region 52 side of the end E2. Therefore, as shown in FIGS. 11B and 12B, the upper surface 54s of the support portion 54 is not exposed even when the center C1 of the wafer W deviates from the center C2 of the susceptor 14.
  • heat exchange is performed between the wafer W and the support portion 54 by heat conduction. That is, heat flows in from the wafer W to the support portion 54, or heat flows out from the wafer W to the support portion 54. For example, when the temperature of the wafer W is lower than the temperature of the support portion 54, heat flows from the wafer W to the support portion 54. On the other hand, when the temperature of the wafer W is higher than the temperature of the support portion 54, heat flows out from the wafer W to the support portion 54.
  • the area of the support portion 54 in contact with the back surface of the wafer W changes depending on the position of the wafer W. For example, at the wafer W position near the portion where the upper surface 54s of the support portion 54 is exposed, the degree of heat exchange is lower than at the wafer W position near the portion where the upper surface 54s of the support portion 54 is not exposed.
  • the degree of heat exchange between the wafer W and the support portion 54 varies depending on the position of the wafer W. Therefore, the temperature uniformity of the wafer W is lowered.
  • the susceptor 14 of the first embodiment since the upper surface 54s of the support portion 54 is not exposed, it is possible to suppress a decrease in the temperature uniformity of the wafer W.
  • the susceptor 14 of the first embodiment since the upper surface 54s of the support portion 54 is not exposed, by-products adhere to the upper surface 54s of the support portion 54 when the silicon carbide film is formed on the surface of the wafer W. Can be suppressed. Therefore, by riding the wafer W on the by-product 66, it is possible to prevent the by-product 66 from adhering to the back surface of the wafer W.
  • the vapor phase growth apparatus 100 of the first embodiment includes a second heater 42 and heats the wafer W mounted on the susceptor 14 from above.
  • the second heater 42 heats the wafer W placed on the susceptor 14 from the outer peripheral side of the susceptor 14.
  • the outer region 52 is close to the second heater 42, and the temperature tends to rise during the formation of the silicon carbide film. Therefore, when the center C1 of the wafer W and the center C2 of the susceptor 14 are displaced and the wafer W comes into contact with the outer region 52, the portion in contact with the outer region 52 of the wafer W may have a higher temperature than the other portions. .. In such a case, the temperature in the vicinity of the end Ex of the film quality guarantee region Wa tends to be high in the vicinity of the portion in contact with the outer region 52 of the wafer W. That is, the film quality tends to vary in the vicinity of the end Ex of the film quality guarantee region Wa that has become hot.
  • the distance X between the outer peripheral end E2 of the support portion 54 and the inner peripheral end E3 of the outer region 52 is 6 mm or less.
  • the distance between the portion in contact with the outer region 52 of the wafer W and the support portion 54 is closer than in the case where the distance X is larger than 6 mm, the outer region 52 of the wafer W 52. Heat is likely to flow out from the portion in contact with the wafer W to the support portion 54 in contact with the back surface of the wafer W via the wafer W.
  • the width w of the support portion 54 is 3 mm or more.
  • the susceptor 14 of the first embodiment has a large contact area as compared with the case where the width w of the support portion 54 is less than 3 mm, so that heat exchange is promoted.
  • FIG. 13 is a schematic diagram of the holder of the second comparative example. 13 (a) is a top view and FIG. 13 (b) is a cross-sectional view.
  • FIG. 13 is a diagram showing a state in which the wafer W is placed on the susceptor 74.
  • FIG. 13 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 64 coincide with each other.
  • the susceptor 74 of the second comparative example has the following formulas for the radius R2 of the film quality guarantee region Wa of the wafer W, the radius R3 of the inner peripheral end of the support portion 54, the radius R4 of the outer peripheral end of the support portion 54, and the distance D1. It differs from the susceptor 14 of the first embodiment in that 2 and the formula 3 are not satisfied.
  • the susceptor 74 of the second comparative example satisfies the following equations 2'and 3'.
  • FIG. 14 is an enlarged schematic cross-sectional view of the holder of the second comparative example.
  • FIG. 14 is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52.
  • 14 (a) shows a state in which an arbitrary end of the wafer W is inside, that is, D1 is displaced to the left in the figure
  • FIG. 14 (b) shows an arbitrary end of the wafer W on the outside, that is, to the right in the figure. Indicates a state in which D1 is deviated.
  • the uniformity of the film quality in the plane of the wafer W is lowered. This is because the heat exchange between the support portion 54 and the vicinity of the end portion Ex of the film quality guarantee region Wa is insufficient, so that the temperature in the vicinity of the end portion Ex of the film quality guarantee region Wa tends to vary, and the temperature in the vicinity of the end portion Ex of the film quality guarantee region Wa tends to vary. It is considered that this is because the temperature uniformity is lowered.
  • FIG. 15 is an enlarged schematic cross-sectional view of the holder of the first embodiment.
  • FIG. 15 is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52.
  • 15 (a) shows a state in which an arbitrary end of the wafer W is inside, that is, D1 is displaced to the left in the figure
  • FIG. 15 (b) shows an arbitrary end of the wafer W on the outside, that is, to the right in the figure. Indicates a state in which D1 is deviated.
  • the susceptor 14 of the first embodiment satisfies the following equations 2 and 3.
  • Equation 2 as shown in FIG. 15A, when an arbitrary end of the wafer W is displaced inward by D1 with respect to the susceptor 14, the end of the film quality guarantee region Wa (Ex in FIG. 15) is It means that the support portion 54 is located on the outer peripheral side of the susceptor 14 with respect to the inner peripheral end E1. That is, it means that the end Ex of the film quality guarantee region Wa is on the support portion 54.
  • the end portion Ex of the film quality guarantee region Wa is larger than the outer peripheral end E2 of the support portion 54. It means that it is located on the inner peripheral side of the susceptor 14. That is, it means that the end Ex of the film quality guarantee region Wa is on the support portion 54.
  • the end Ex of the film quality guarantee region Wa is always on the support portion 54 even when the wafer W is displaced with respect to the susceptor 14. Therefore, heat exchange between the support portion 54 and the vicinity of the end portion Ex of the film quality guarantee region Wa is promoted. Therefore, the uniformity of the film quality in the plane of the wafer W is improved.
  • the difference between the radius R1 of the wafer W and the radius R2 of the film quality guarantee region Wa is preferably 3 mm or more and 6 mm or less.
  • the difference is 3 mm or more, it becomes easy to guarantee the film quality of the wafer W.
  • the difference is 6 mm or less, the ratio of the film quality guarantee region Wa in the plane of the wafer W becomes large.
  • the distance D1 between the outer peripheral edge of the wafer W and the inner peripheral edge E3 of the outer region 52 is preferably 0.5 mm or more and 3 mm or less.
  • the distance D1 is 0.5 mm or more, it becomes easy to place the wafer W on the susceptor 14 by using a transfer robot or the like.
  • the process gas wraps around between the outer peripheral end of the wafer W and the inner peripheral end E3 of the outer region 52, and the support portion 54 and the inner peripheral end E3 of the outer region 52 The formation of by-products between them is likely to be suppressed.
  • the by-product when a by-product is formed between the support portion 54 and the inner peripheral end E3 of the outer region 52, the by-product may sublimate and reattach to the back surface of the wafer W. From the viewpoint of suppressing the reattachment of the by-product to the wafer W due to sublimation, it is preferable to suppress the formation of the by-product between the support portion 54 and the inner peripheral end E3 of the outer region 52.
  • the radius R3 of the inner peripheral end E1 of the support portion 54 is preferably 85% or more of the radius R1 of the wafer W.
  • the support portion 54 can hold the back surface of the outer peripheral portion of the wafer W. Therefore, for example, when the wafer W is deformed into a concave shape, it is possible to prevent point contact between the back surface of the wafer W and the support portion 54. Therefore, it is possible to prevent the wafer W from not following the rotation of the susceptor 14. Further, it is possible to suppress deterioration of the temperature distribution in the plane of the wafer W due to the point contact between the back surface of the wafer W and the support portion 54. Further, when the wafer W is deformed into a concave shape, it is possible to prevent the process gas from wrapping around between the back surface of the wafer W and the support portion 54 and forming a by-product.
  • the radius R3 is set to 85% or more of the radius R1, the area of the back surface of the wafer W exposed to the outside of the outer peripheral end E2 of the support portion 54 can be reduced. Therefore, it is possible to suppress the adhesion of by-products due to the wraparound of the process gas on the back surface of the wafer W.
  • the position of the upper surface 52s of the outer region 52 is preferably above the position of the surface of the wafer W, for example. It is possible to prevent the wafer W from coming off the susceptor 14 during the rotation of the susceptor 14.
  • the height h of the support portion 54 is preferably 0.5 mm or more and 3 mm or less.
  • the distance between the wafer W and the inner region is short, so that the temperature distribution in the plane of the wafer W is easily affected by a slight warp of the wafer. That is, the variation in the warp of the wafer W tends to cause a difference in the temperature distribution of the wafer W between the wafers, which tends to cause deterioration of the reproducibility of the film quality. Further, since it is difficult to completely align the center of gravity of the wafer W with the center of rotation, a centrifugal force acts on the wafer W.
  • the susceptor 14 slightly floats to generate vibration, the wafer W comes off the susceptor, and the reproducibility of the film quality is deteriorated. It will be easier.
  • the width w of the support portion 54 is preferably 10 mm or less. By setting the width w to 10 mm or less, when the wafer W is deformed into a concave shape, it becomes easy to suppress the process gas from wrapping around between the back surface of the wafer W and the support portion 54 and forming by-products. ..
  • the temperature uniformity of the substrate can be improved. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the vapor phase growth apparatus of the second embodiment is different from the first embodiment in that the inner region is not a disk shape but an annular shape.
  • the inner region is not a disk shape but an annular shape.
  • FIG. 16 is a schematic diagram of the holder of the second embodiment. 16 (a) is a top view, and FIG. 16 (b) is a cross-sectional view taken along the line CC'of FIG. 16 (a).
  • the susceptor 14 has a central C2.
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the inner region 50 has an annular shape. There is an opening in the center of the inner region 50.
  • the outer region 52 is annular.
  • the uniformity of the temperature of the substrate can be improved as in the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the gas phase growth apparatus of the third embodiment is different from the gas phase growth apparatus of the first embodiment in that it has a plurality of protrusions on the inner peripheral side of the outer region of the holder.
  • some descriptions of the contents overlapping with the first embodiment will be omitted.
  • FIG. 17 is a schematic diagram of the holder of the third embodiment. 17 (a) is a top view, and FIG. 17 (b) is a cross-sectional view taken along the line DD'of FIG. 17 (a).
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the susceptor 14 has a plurality of convex portions 55 on the inner peripheral side of the outer region 52.
  • FIG. 18 is a schematic diagram of the holder of the third embodiment. 18 (a) is a top view corresponding to FIG. 17 (a), and FIG. 18 (b) is a sectional view corresponding to FIG. 17 (b).
  • FIG. 18 is a diagram showing a state in which the wafer W is placed on the susceptor 14.
  • FIG. 18 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 14 coincide with each other.
  • FIG. 19 is an explanatory diagram of the operation and effect of the third embodiment.
  • FIG. 19 is a schematic view of the holder of the third embodiment. 19 (a) is a top view and FIG. 19 (b) is a cross-sectional view. 19 (b) is a cross-sectional view corresponding to FIG. 18 (b).
  • FIG. 19 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 14 do not match. In other words, FIG. 19 shows a case where the wafer W is displaced from the center C2 of the susceptor 14.
  • the outer circumference of the wafer W comes into contact with the outer region 52 at the convex portion 55. Therefore, the contact area between the outer circumference of the wafer W and the outer region 52 is smaller than that of the susceptor 14 of the first embodiment, for example. Therefore, the inflow of heat from the outer region 52 is suppressed, and the temperature uniformity of the wafer W is improved.
  • the uniformity of the temperature of the substrate can be further improved as compared with the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is further improved.
  • the outer region of the holder is provided on the first member containing carbon and the first member, and is separable from the first member, and at least the surface thereof contains silicon carbide. It differs from the gas phase growth apparatus of the first embodiment in that it includes two members. Hereinafter, some descriptions of the contents overlapping with the first embodiment will be omitted.
  • FIG. 20 is a schematic diagram of the holder of the fourth embodiment. 20 (a) is a top view, and FIG. 20 (b) is a cross-sectional view taken along the line EE'of FIG. 20 (a).
  • FIG. 21 is an enlarged schematic cross-sectional view of the holder of the fourth embodiment.
  • FIG. 21 is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52.
  • FIG. 21A shows a state in which the wafer W is not mounted
  • FIG. 21B shows a state in which the wafer W is mounted.
  • the susceptor 14 has a central C2.
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the outer region 52 includes a first member 56 and a second member 58.
  • the second member 58 is placed on the first member 56.
  • the second member 58 has an annular shape.
  • An outer peripheral fixing portion 56a protruding upward is provided at the outer peripheral end of the first member 56.
  • the outer peripheral fixing portion 56a surrounds the second member 58.
  • the outer peripheral fixing portion 56a fixes the second member 58 placed on the first member 56 in the lateral direction.
  • the second member 58 and the first member 56 are separable. It should be noted that the structure may be such that the upper portion of the second member 58 extends toward the first member 56 and the upper portion extending to the outside of the second member is placed on the first member 56.
  • the boundary between the first member 56 and the second member 58 is, for example, below the upper surface of the wafer W. Therefore, when the wafer W is displaced D1 to the outside, a part of the wafer W comes into contact with a part of the second member 58.
  • the first member 56 and the second member 58 are made of different materials.
  • the first member 56 contains carbon (C).
  • the second member 58 contains silicon carbide. At least the surface of the second member 58 contains silicon carbide.
  • the second member 58 is, for example, polycrystalline silicon carbide.
  • the second member 58 is, for example, 3C-SiC.
  • the by-product formed on the upper surface 52s of the outer region 52 may peel off from the upper surface 52s due to the application of stress due to the temperature change of the susceptor 14.
  • the dust in the reaction chamber 10 increases, and the film quality of the formed film tends to deteriorate.
  • the by-product formed on the upper surface 52s of the outer region 52 may generate a large stress on the susceptor 14 and cause the susceptor 14 to warp.
  • the susceptor 14 is warped, the temperature distribution of the wafer W is deteriorated, and the uniformity of the film quality of the formed film tends to be deteriorated.
  • the main component of the by-product formed on the upper surface 52s is silicon carbide. Since the surface of the second member 58 contains silicon carbide, the coefficient of thermal expansion of the second member 58 and the by-product become close to each other. Therefore, the peeling of the by-product from the upper surface 52s is suppressed, and the film quality of the formed film is easily improved. In addition, the warp of the susceptor 14 due to the by-product is also suppressed, and the uniformity of the film quality of the formed film is easily improved.
  • FIG. 22 is an enlarged schematic cross-sectional view of the holder of the fourth embodiment.
  • FIG. 22 is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52.
  • 22 (a) shows a state in which an arbitrary end of the wafer W is shifted inward, that is, D1 shifted to the left in the figure
  • FIG. 22 (b) shows a state in which an arbitrary end of the wafer W is shifted outward, that is, D1 shifted to the right. Indicates the state.
  • the end Ex of the film quality guarantee region Wa is always on the support portion 54 even when the wafer W is displaced with respect to the susceptor 14. Therefore, heat exchange between the support portion 54 and the vicinity of the end portion Ex of the film quality guarantee region Wa is promoted. Therefore, the uniformity of the film quality in the plane of the wafer W is improved.
  • the first member 56 and the second member 58 are made of different materials. Therefore, the boundary between the first member 56 and the second member 58 becomes a thermal resistance. Therefore, when the second member 58 is heated by the second heater 42 and becomes hot, the heat inflow from the second member 58 to the first member 56 is suppressed. Therefore, for example, the temperature of the second member 58 tends to be higher than that of the case where the first member 56 and the second member 58 are made of the same material. Therefore, due to the heat flowing in from the portion of the wafer W in contact with the second member 58, the temperature in the vicinity of the end Ex of the film quality guarantee region Wa tends to be high in the vicinity of the portion of the wafer W in contact with the second member 58.
  • the uniformity of the temperature of the substrate can be improved as in the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the vapor phase growth apparatus of the fifth embodiment is provided with an inner peripheral fixing portion protruding upward at the inner peripheral end of the first member in the outer region of the holder, and the vapor phase growth apparatus of the fourth embodiment is provided. Different from. Hereinafter, some descriptions of the contents overlapping with the first embodiment and the fourth embodiment will be omitted.
  • FIG. 23 is a schematic diagram of the holder of the fifth embodiment.
  • 23 (a) is a top view
  • FIG. 23 (b) is a cross-sectional view taken along the line FF'of FIG. 23 (a).
  • FIG. 24 is an enlarged schematic cross-sectional view of the holder of the fifth embodiment.
  • FIG. 24 is a cross-sectional view of a part of the inner region 50 including the support portion 54 and the outer region 52.
  • FIG. 24A shows a state in which the wafer W is not mounted
  • FIG. 24B shows a state in which the wafer W is mounted.
  • the susceptor 14 has a central C2.
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the outer region 52 includes a first member 56 and a second member 58.
  • the second member 58 is placed on the first member 56.
  • the second member 58 has an annular shape.
  • An outer peripheral fixing portion 56a protruding upward is provided at the outer peripheral end of the first member 56.
  • the outer peripheral fixing portion 56a surrounds the second member 58.
  • an inner peripheral fixing portion 56b protruding upward is provided at the inner peripheral end of the first member 56.
  • the second member 58 surrounds the inner peripheral fixing portion 56b.
  • the second member 58 placed on the first member 56 is laterally fixed by the inner peripheral fixing portion 56b and the outer peripheral fixing portion 56a.
  • the second member 58 and the first member 56 are separable. It should be noted that the structure may be such that the upper portion of the second member 58 extends toward the outer peripheral fixing portion 56a and the upper portion extending to the outside of the second member 58 is placed on the outer peripheral fixing portion 56a.
  • the wafer W does not come into direct contact with the second member 58 even when an arbitrary end of the wafer W is displaced outward by D1. Therefore, even when the second member 58 is heated by the second heater 42 to a high temperature, the inflow of heat from the second member 58 to the wafer W is suppressed. Therefore, the temperature uniformity of the wafer W is maintained as compared with the case where the susceptor 14 of the fourth embodiment is used.
  • the uniformity of the temperature of the substrate can be improved as in the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the vapor deposition apparatus of the sixth embodiment differs from the vapor deposition apparatus of the fourth embodiment in that the holder has a base portion and a separable detachable portion on the base portion.
  • the holder has a base portion and a separable detachable portion on the base portion.
  • FIG. 25 is a schematic diagram of the holder of the sixth embodiment. 25 (a) is a top view, and FIG. 25 (b) is a cross-sectional view taken along the line GG'in FIG. 25 (a).
  • the susceptor 14 has a central C2.
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the susceptor 14 includes a base portion 60 and a detachable portion 62.
  • the detachable portion 62 is provided on the base portion 60.
  • the detachable portion 62 is separable from the base portion 60.
  • a part of the inner region 50 and a part of the outer region 52 are included in the base portion 60. Another portion of the inner region 50 is included in the detachable portion 62.
  • the base portion 60 and the detachable portion 62 are formed of, for example, the same material. Further, the base portion 60 and the detachable portion 62 are formed of different materials, for example.
  • the outer region 52 includes a first member 56 and a second member 58. A part of the second member 58 is placed on the base portion 60. Another part of the second member 58 is placed on the detachable portion 62.
  • the second member 58 has an annular shape.
  • the susceptor 14 of the sixth embodiment has a detachable portion 62 that can be separated from the base portion 60, which facilitates maintenance.
  • the uniformity of the temperature of the substrate can be improved as in the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the substrate has an orientation flat
  • the support portion has a straight portion along the orientation flat when the substrate is placed on the holder, and the outer region facing the straight portion.
  • the inner peripheral end of the above is different from the gas phase growth apparatus of the first embodiment in that it has a linear shape.
  • FIG. 26 is a schematic diagram of the holder of the seventh embodiment. 26 (a) is a top view, and FIG. 26 (b) is a cross-sectional view taken along the line HH'of FIG. 26 (a).
  • FIG. 27 is a schematic diagram of the holder of the seventh embodiment.
  • 27 (a) is a top view corresponding to FIG. 26 (a)
  • FIG. 27 (b) is a sectional view corresponding to FIG. 26 (b).
  • FIG. 27 is a diagram showing a state in which the wafer W is placed on the susceptor 14.
  • FIG. 27 shows a case where the center C1 of the wafer W and the center C2 of the susceptor 14 coincide with each other.
  • Wafer W has an orientation flat OF.
  • the orientation flat OF is a straight line portion provided on the outer periphery of the wafer W to indicate the crystal orientation of the wafer W.
  • the susceptor 14 includes an inner region 50 and an outer region 52.
  • the outer region 52 surrounds the inner region 50.
  • the outer region 52 surrounds the wafer W.
  • the inner region 50 has a disk shape.
  • the outer region 52 is annular.
  • the annular support portion 54 is provided on the inner region 50.
  • the annular support portion 54 includes an arc portion 54a and a straight portion 54b.
  • the support portion 54 can support the lower surface of the wafer W when the wafer W is placed on the susceptor 14.
  • the straight portion 54b is along the orientation flat OF when the wafer W is placed on the susceptor 14.
  • the straight portion 54b supports the lower surface of the wafer W along the orientation flat OF.
  • a part 52b of the inner peripheral end of the outer region 52 facing the straight portion 54b of the support portion 54 has a linear shape.
  • a part 52b of the inner peripheral end of the outer region 52 is along the orientation flat OF when the wafer W is placed on the susceptor 14.
  • the width of the arc portion 54a of the support portion 54 (w1 in FIG. 26A) and the width of the straight portion 54b of the support portion 54 (w2 in FIG. 26A) are, for example, equal.
  • the distance between the straight line portion 54b and a part 52b of the inner peripheral end of the outer region 52 facing the straight line portion 54b is, for example, set to the arc portion 54a and the arc portion 54a. It is equal to the distance (X1 in FIG. 26B) between the inner peripheral end of the facing outer region 52 and another part 52a.
  • the distance between the outer peripheral end of the wafer W and another part 52a of the inner peripheral end of the outer region 52 facing the arc portion 54a is, for example, the outer peripheral end of the wafer W. Is equal to the distance (D2 in FIG. 27B) from the part 52b of the inner peripheral end of the outer region 52 facing the straight line portion 54b.
  • the temperature uniformity of the wafer W is maintained even when the wafer W has the orientation flat OF.
  • the uniformity of the temperature of the substrate can be improved as in the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the distance between the outer peripheral end of the straight line portion and the inner peripheral end of the outer region is larger than the distance between the outer peripheral end of the arc portion and the inner peripheral end of the outer region. It is different from the vapor phase growth apparatus of the seventh embodiment.
  • some descriptions of the contents overlapping with the first embodiment and the seventh embodiment will be omitted.
  • FIG. 28 is a schematic diagram of the holder of the eighth embodiment. 28 (a) is a top view, and FIG. 28 (b) is a cross-sectional view taken along the line II'of FIG. 28 (a).
  • the distance between the straight line portion 54b and a part 52b of the inner peripheral end of the outer region 52 facing the straight line portion 54b is, for example, set to the arc portion 54a and the arc portion 54a. It is larger than the distance (X1 in FIG. 28B) between the inner peripheral end of the facing outer region 52 and another part 52a.
  • the distance X2 is, for example, 1.2 times or more and 3 times or less the distance X1.
  • the distance between the outer peripheral end of the support portion 54 and the inner peripheral end of the outer region 52 is larger in the straight portion 54b than in the arc portion 54a.
  • FIG. 29 is an explanatory diagram of the operation and effect of the eighth embodiment.
  • FIG. 29 is a schematic view of the holder of the seventh embodiment.
  • FIG. 29 is a top view.
  • the susceptor 14 of the seventh embodiment is a distance between the straight line portion 54b and a part 52b of the inner peripheral end of the outer region 52 facing the straight line portion 54b (FIG. X2) in 26 (b) is the distance between the arc portion 54a and another portion 52a of the inner peripheral end of the outer region 52 facing the arc portion 54a (X1 in FIG. 26 (b)). ,equal.
  • the wafer W when the wafer W rotates relative to the susceptor 14, the wafer W may be pinched and fixed between the inner peripheral ends of the outer region 52.
  • compressive stress is applied to the wafer W due to the difference in the coefficient of thermal expansion between the wafer W and the outer region 52, and the wafer W is subjected to compressive stress. May crack.
  • FIG. 30 is an explanatory diagram of the operation and effect of the eighth embodiment.
  • FIG. 30 is a schematic view of the holder of the eighth embodiment.
  • FIG. 30 is a top view.
  • FIG. 30 shows a case where the wafer W placed on the susceptor 14 of the eighth embodiment rotates relative to the susceptor 14.
  • the distance between the straight line portion 54b and a part 52b of the inner peripheral end of the outer region 52 facing the straight line portion 54b (X2 in FIG. 28B) is an arc portion. It is larger than the distance between 54a and another part 52a of the inner peripheral end of the outer region 52 facing the arc portion 54a (X1 in FIG. 28B). Therefore, it is possible to prevent the wafer W from being sandwiched and fixed between the inner peripheral ends of the outer region 52. Therefore, compressive stress is applied to the wafer W, and the wafer W is prevented from cracking.
  • the distance X2 is preferably 1.2 times or more and twice or less the distance X1.
  • the distance X2 is 1.2 times or more the distance X1, it is possible to prevent the wafer W from being sandwiched and fixed between the inner peripheral ends of the outer region 52. Further, when the distance X2 is twice or less the distance X1, it is possible to prevent the process gas from wrapping around the back surface of the wafer W and adhering by-products to the back surface of the wafer W.
  • the uniformity of the temperature of the substrate can be improved as in the first embodiment. Therefore, the uniformity of the characteristics of the film formed on the substrate is improved.
  • the present invention can also be applied to the formation of a polycrystalline or amorphous silicon carbide film. Further, the present invention can be applied to the formation of a film other than the silicon carbide film having a high film forming temperature.
  • the wafer of single crystal silicon carbide has been described as an example of the substrate, but the substrate is not limited to the wafer of single crystal silicon carbide.
  • Reaction chamber 14 Suceptor (holder) 22 First heater 42 Second heater 50 Inner region 52 Outer region 54 Support part 54a Arc part 54b Straight part 56 First member 58 Second member 100 Vapor phase growth device OF Orientation flat W wafer (board) Wa film quality guarantee area X distance w width

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EP21889009.3A EP4243054A4 (en) 2020-11-09 2021-10-18 VAPOR PHASE GROWTH DEVICE
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EP4243054A4 (en) * 2020-11-09 2024-11-13 NuFlare Technology, Inc. VAPOR PHASE GROWTH DEVICE
IT202000028778A1 (it) * 2020-11-27 2022-05-27 St Microelectronics Srl Procedimento di fabbricazione di una fetta di sic con controllo dello stress residuo

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JPWO2022097456A1 (https=) 2022-05-12
CN216947286U (zh) 2022-07-12
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CN114457416B (zh) 2025-02-11

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