WO2022044834A1 - 基板を処理する装置、及び基板を処理する方法 - Google Patents

基板を処理する装置、及び基板を処理する方法 Download PDF

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Publication number
WO2022044834A1
WO2022044834A1 PCT/JP2021/029759 JP2021029759W WO2022044834A1 WO 2022044834 A1 WO2022044834 A1 WO 2022044834A1 JP 2021029759 W JP2021029759 W JP 2021029759W WO 2022044834 A1 WO2022044834 A1 WO 2022044834A1
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WIPO (PCT)
Prior art keywords
substrate
chamber
wafer
stage
magnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2021/029759
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English (en)
French (fr)
Japanese (ja)
Inventor
博充 阪上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to KR1020237008815A priority Critical patent/KR102785462B1/ko
Priority to CN202512035566.9A priority patent/CN121908843A/zh
Priority to CN202180050414.3A priority patent/CN115916673B/zh
Priority to CN202512035570.5A priority patent/CN121908844A/zh
Priority to KR1020257005057A priority patent/KR20250029269A/ko
Priority to US18/021,157 priority patent/US12512354B2/en
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to KR1020257005056A priority patent/KR102914542B1/ko
Publication of WO2022044834A1 publication Critical patent/WO2022044834A1/ja
Anticipated expiration legal-status Critical
Priority to US19/360,854 priority patent/US20260047386A1/en
Priority to US19/360,847 priority patent/US20260047385A1/en
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3204—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations using magnetic elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B65—CONVEYING; PACKING; STORING; HANDLING THIN OR FILAMENTARY MATERIAL
    • B65G—TRANSPORT OR STORAGE DEVICES, e.g. CONVEYORS FOR LOADING OR TIPPING, SHOP CONVEYOR SYSTEMS OR PNEUMATIC TUBE CONVEYORS
    • B65G54/00—Non-mechanical conveyors not otherwise provided for
    • B65G54/02—Non-mechanical conveyors not otherwise provided for electrostatic, electric, or magnetic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0441—Apparatus for sealing, encapsulating, glassing, decapsulating or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0462—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the processing chambers, e.g. modular processing chambers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0464—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the construction of the transfer chamber
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/33—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations into and out of processing chamber
    • H10P72/3308—Vertical transfer of a single workpiece
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7612—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by lifting arrangements, e.g. lift pins
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7618—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating carrousel
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present disclosure relates to an apparatus for processing a substrate and a method for processing the substrate.
  • the wafer is transferred between a carrier that accommodates the wafer and a wafer processing chamber in which processing is executed. .. Wafer transfer mechanisms having various configurations are used to transfer wafers.
  • Patent Document 1 includes a transport table that floats and travels on a transport path while maintaining a non-contact state with respect to a track and a partition wall by the action of a magnetic force from a magnetic pole to transport an object to be transported such as a semiconductor wafer.
  • a magnetic levitation transfer device is described.
  • the present disclosure provides a technique for transporting a substrate by utilizing magnetic levitation while suppressing an increase in the footprint of the equipment to be arranged.
  • the apparatus for processing a substrate is an apparatus for processing a substrate.
  • a substrate transfer chamber having a floor surface provided with a first magnet, and A stage on which the substrate is placed, a traveling plate arranged on the lower side of the stage, and a second magnet in which a repulsive force acts between the first magnet and the second magnet are provided, and the repulsive force is used.
  • a substrate transfer module configured to be movable in the substrate transfer chamber by magnetic levitation, An opening provided on the upper surface side of the substrate transfer chamber for processing the substrate and having a size capable of passing at least a part of the stage on which the substrate is placed is a substrate transfer. Equipped with a substrate processing room that opens toward the room, By moving the substrate transfer module upward, the stage on which the substrate is placed is inserted into the substrate processing chamber through the opening, and the substrate is closed by the traveling plate. Is processed.
  • the substrate can be conveyed by using magnetic levitation while suppressing an increase in the footprint of the equipment to be arranged.
  • FIGS. 1 to 3 show a multi-chamber type wafer processing apparatus 100 provided with a plurality of wafer processing chambers 110 which are substrate processing chambers for processing wafers W.
  • the wafer processing apparatus 100 includes a load port 141, an atmospheric transfer chamber 140, a load lock chamber 130, a vacuum transfer chamber 120, and a plurality of wafer processing chambers 110.
  • the direction in which the load port 141 is provided is the front side.
  • the load port 141, the atmospheric transport chamber 140, the load lock chamber 130, and the vacuum transport chamber 120 are arranged in this order from the front side in the front-rear direction. Further, the plurality of wafer processing chambers 110 are provided side by side on the upper surface side of the vacuum transfer chamber 120.
  • the load port 141 is configured as a mounting table on which the carrier C accommodating the wafer W to be processed is placed.
  • the carrier C for example, FOUP (Front Opening Unified Pod) or the like can be used.
  • the atmosphere transport chamber 140 has an atmospheric pressure atmosphere, and for example, a downflow of clean air is formed. Further, inside the atmospheric transport chamber 140, a wafer transfer mechanism (not shown) for transporting the wafer W is provided. The wafer transfer mechanism in the atmospheric transfer chamber 140 transfers the wafer W between the carrier C and the load lock chamber 130.
  • the load lock chamber 130 is provided between the vacuum transport chamber 120 and the atmospheric transport chamber 140.
  • the load lock chamber 130 has a stage 131 on which the carried-in wafer W is placed.
  • the load lock chamber 130 is configured to be able to switch between an atmospheric pressure atmosphere and a vacuum atmosphere.
  • the load lock chamber 130 and the atmosphere transport chamber 140 are connected via a gate valve 133.
  • the load lock chamber 130 and the vacuum transfer chamber 120 are connected via a gate valve 132.
  • the load lock chamber 130 is provided with a wafer transport mechanism 160 for transporting the wafer W to and from the vacuum transport chamber 120, and the configuration thereof will be described later.
  • the vacuum transfer chamber 120 is decompressed to a vacuum atmosphere by a vacuum exhaust mechanism (not shown). Further, inside the vacuum transfer chamber 120, a wafer transfer module 20 for transporting the wafer W between the stage 131 and each wafer processing chamber 110 is provided. The detailed configuration of the wafer transfer module 20 will be described later.
  • the vacuum transfer chamber 120 corresponds to the substrate transfer chamber of the present embodiment.
  • the vacuum transfer chamber 120 is composed of a rectangular housing that is long in the front-rear direction and has a plan view.
  • a total of eight wafer processing chambers 110 are provided on the upper surface side of the vacuum transfer chamber 120. These wafer processing chambers 110 are divided into two rows on the left and right when viewed from the front side, and four wafer processing chambers 110 are arranged side by side.
  • Each wafer processing chamber 110 is depressurized to a vacuum atmosphere by a vacuum exhaust mechanism (not shown), and a predetermined process is performed on the wafer W inside the vacuum atmosphere.
  • the treatment to be performed on the wafer W include an etching treatment, a film forming treatment, a cleaning treatment, and an ashing treatment.
  • the wafer processing chamber 110 is provided with a processing gas supply unit 112 including a shower head or the like (FIGS. 2 and 3).
  • each wafer processing chamber 110 is connected to the upper surface of the vacuum transfer chamber 120, a circular shape that penetrates the ceiling portion of the vacuum transfer chamber 120 and communicates with the internal space of the vacuum transfer chamber 120.
  • the opening 111 is formed.
  • a gate valve or the like for opening and closing the opening 111 is not provided between each wafer processing chamber 110 and the vacuum transfer chamber 120.
  • the wafer processing chamber 110 corresponds to the substrate processing chamber of the present embodiment.
  • the wafer transfer module 20 is configured to be movable in the vacuum transfer chamber 120 by magnetic levitation. Further, the wafer transfer module 20 not only executes the transfer of the wafer W, but also has a function of being connected to the wafer processing chamber 110 during the processing period of the wafer W and supporting the wafer W carried into the wafer processing chamber 110. It is equipped with.
  • the configuration of the equipment related to the transfer and processing of the wafer W using the wafer transfer module 20 will be described in detail.
  • the wafer transfer module 20 includes a stage 21 on which the wafer W is placed and a traveling plate 22 arranged on the lower side of the stage 21.
  • the stage 21 is formed in the shape of a flat disk, and the upper surface thereof is a mounting surface for mounting the wafer W to be transported / processed.
  • the diameter of the stage 21 is smaller than the above-mentioned opening 111 formed on the wafer processing chamber 110 side, and the stage 21 can be inserted into the wafer processing chamber 110 through the opening 111.
  • the diameter of the opening 111 may be larger than the diameter of the wafer W, as long as a part of the stage 21 on which the wafer W is placed can be inserted into the opening 111.
  • a heating unit 31 for heating the wafer W placed on the stage 21 may be provided inside the stage 21 when the processing is performed. Power is supplied to the heating unit 31 from the battery 32, which is a heating power supply unit provided in the wafer transfer module 20, to generate heat in the stage 21.
  • the power supply control unit (not shown) provided in the wafer transfer module 20 controls the increase / decrease and supply / stop of the electric power supplied to the heating unit 31.
  • the power supply control unit may be configured to acquire a control signal related to power supply control by wireless communication with the control unit 150 described later.
  • the heating unit 31 in the stage 21 may not be provided.
  • a disk-shaped traveling plate 22 arranged so as to support the stage 21 from the lower surface side is provided.
  • the diameter of the traveling plate 22 is larger than the diameter of the stage 21, and the opening 111 of the wafer processing chamber 110 can be closed.
  • An O-ring 23 is provided on the upper surface of the traveling plate 22 so as to surround the stage 21 (opening 111 on the wafer processing chamber 110 side).
  • the O-ring 23 plays a role of keeping the inside of the wafer processing chamber 110 airtight in a state where the above-mentioned opening 111 is closed by the traveling plate 22.
  • the alignment pin 33 may be provided on the upper surface of the traveling plate 22.
  • the wafer transfer module 20 is aligned so that the alignment pin 33 is inserted into the alignment hole 34 provided on the ceiling surface side of the vacuum transfer chamber 120, and then the stage 21 is subjected to wafer processing. Insert into the chamber 110.
  • the wafer W can be processed at a preset correct position.
  • the traveling plate 22 is not limited to the example in which the traveling plate 22 is composed of a plate-shaped member that supports the stage 21 from the lower surface side.
  • the traveling plate 22 may be configured by providing an annular member so as to spread like a flange from the side peripheral surface on the lower side of the stage 21.
  • a plurality of floor surface side coils 15 are arranged in the floor surface portion 10 of the vacuum transfer chamber 120.
  • the floor side coil 15 generates a magnetic field by being supplied with electric power from a power supply unit (not shown). From this point of view, the floor surface side coil 15 corresponds to the first magnet of the present embodiment.
  • a plurality of module-side coils 35 are also arranged inside the wafer transfer module 20.
  • a repulsive force acts on the module-side coil 35 with the magnetic field generated by the floor-side coil 15.
  • the wafer transfer module 20 can be magnetically levitated with respect to the floor surface portion 10.
  • the wafer transfer module 20 can be moved in a desired direction on the floor surface portion 10, the floating amount can be adjusted, and the wafer transfer module 20 can be moved.
  • the orientation can be adjusted.
  • a permanent magnet may be additionally provided inside the wafer transfer module 20.
  • the module-side coil 35 provided in the wafer transfer module 20 corresponds to the second magnet of the present embodiment. Power is supplied to the module-side coil 35 from the battery 32, which is a magnet power supply unit provided in the wafer transfer module 20, and functions as an electromagnet.
  • FIGS. 6 and 7 have a configuration in which power is supplied to the module-side coil 35 by using the same battery 32 that supplies power to the heating unit 31 described above. Unlike this example, the heating power supply unit and the magnet power supply unit may be configured by different batteries 32. Further, instead of the module-side coil 35, only a permanent magnet may be provided in the wafer transfer module 20 to form a second magnet.
  • each module-side coil 35 is controlled to increase or decrease the power supplied to the module-side coil 35 and to control supply / stop by a power supply control unit (not shown) provided in the wafer transfer module 20.
  • the power supply control unit may be configured to acquire a control signal related to power supply control by wireless communication with the control unit 150 described later.
  • a plurality of elevating mechanisms 4 for executing an operation of inserting the stage 21 into the wafer processing chamber 110 via the opening 111 are provided in the vacuum transfer chamber 120 in association with each wafer processing chamber 110.
  • the elevating mechanism 4 is arranged on the lower surface side of the floor surface portion 10 and the support plate 41 that supports the wafer transfer module 20 from the bottom surface side, and moves up and down along a rail (not shown). It includes a base portion 45 provided with a slider 44, and a support portion 42 that supports the support plate 41 and is connected to the slider 44 through the vacuum transfer chamber 120.
  • a stretchable bellows 43 is provided so as to surround the support column portion 42 penetrating the floor surface portion 10. The bellows 43 suppresses the ingress of gas from the outside atmosphere, and keeps the inside of the vacuum transfer chamber 120 airtight.
  • the support plate 41 is raised, and the stage 21 is inserted into the wafer processing chamber 110, and the lower side thereof is placed on the lower side thereof.
  • the wafer transfer module 20 is configured to have a movable height.
  • a cleaning chamber 123 is connected to the rear end side of the vacuum transfer chamber 120 via a gate valve 124.
  • the cleaning chamber 123 is configured to accommodate the wafer transfer module 20. Then, the wafer transfer module 20 to which the reaction product or the like adheres to the stage 21 is moved into the cleaning chamber 123 along with the processing of the wafer W, and the cleaning gas is supplied toward the stage 21. As a result, cleaning is performed to remove the reaction products.
  • the wafer transfer module exchange chamber in which either or both of the wafer transfer modules 20 and the stage 21 or both are stocked, or the stage exchange chamber may be connected to the vacuum transfer chamber 120.
  • a closing module 50 for closing the opening 111 of the wafer processing chamber 110 during the period during which the wafer W is not processed is provided inside the vacuum transfer chamber 120.
  • the closing module 50 is configured in the same manner as the wafer transfer module 20 described above, except that the stage 21 is not provided. That is, the closing module 50 is provided with a module-side coil 35 in the traveling plate 22, and magnetically levitates using the repulsive force acting between the floor-side coil 15 and the floor-side coil 15 of the floor surface portion 10, and moves in the vacuum transfer chamber 120. Possible to be configured.
  • the closing module 50 moves up and down using the elevating mechanism 4 described above, and the traveling plate 22 comes into contact with the ceiling surface of the vacuum transfer chamber 120 in which the opening 111 of the wafer processing chamber 110 is formed.
  • the opening 111 is closed.
  • the O-ring 23 and the alignment pin 33 described above may be provided on the upper surface of the traveling plate 22.
  • the number of closing modules 50 arranged in the vacuum transfer chamber 120 may be smaller than the number of wafer processing chambers 110 provided on the upper surface side of the vacuum transfer chamber 120.
  • a sufficient number of closing modules 50 are arranged to keep the opening 111 of the wafer processing chamber 110 closed. You just have to.
  • an evacuation chamber 121 for retracting the closed module 50 may be connected to the rear end side of the vacuum transfer chamber 120 while the closed module 50 is not in use.
  • the evacuation chamber 121 is not particularly limited in its configuration as long as it has a space for accommodating the retracted closing module 50.
  • the internal space between the closing module 50 and the vacuum transfer chamber 120 may be in a state of communication at all times, and it is not an essential requirement that both internal spaces can be separated by using a gate valve or the like. ..
  • the ceiling of the load lock chamber 130 is provided with a wafer transfer mechanism 160 that transfers the wafer W between the stage 131 in the load lock chamber 130 and the stage 21 on the wafer transfer module 20 side.
  • the wafer transfer mechanism 160 of this example has an arm portion 162 configured to be rotatable, elevating, and expanding / contracting around a central axis, and an end effector 163 provided on the tip end side of the arm portion 162. And prepare.
  • a Bernoulli chuck 161 capable of lifting and transporting the wafer W in a non-contact state is provided on the lower surface of the end effector 163.
  • the end effector 163 may be provided with an edge clamp (not shown) in place of the Bernoulli chuck 161 so that the edge clamp is brought into contact with the side surface of the wafer W to hold the wafer W in between.
  • the wafer transfer mechanism 160 corresponds to a substrate transfer mechanism provided outside the vacuum transfer chamber 120.
  • the stage 21 of the wafer transfer module 20 is configured to be freely retractable from the upper surface of the stage 21 which is a mounting surface.
  • a plurality of elevating pins 241 are provided.
  • an elevating mechanism for elevating and elevating the elevating pin 241 is provided in order to execute the retracting operation.
  • the elevating mechanism of the elevating pin 241 includes an elevating coil 242, which is a third magnet in which a repulsive force acts between the elevating mechanism and the magnetic field generated by the floor surface side coil 15 provided on the floor surface portion 10. Then, the elevating pin 241 is moved up and down by changing the amount of levitation of the magnetic levitation using the repulsive force. By this operation, the elevating pin 241 is recessed from the stage 21, and the wafer W is transferred to and from the wafer transfer mechanism 160.
  • the stage 21 is provided with a battery (not shown) that supplies electric power to the elevating coil 242 and a power supply control unit that controls the power supply of the electric power, as in the case of the module-side coil 35 described above. be.
  • the method for realizing the elevating operation of the elevating pin 241 is not limited to the case of using magnetic levitation.
  • a mechanical elevating mechanism may be provided in the stage 21 and the elevating pin 241 may be elevated by using a motor or the like.
  • the wafer processing device 100 having the above configuration includes a control unit 150 that controls each floor surface side coil 15, an elevating mechanism 4, a wafer processing chamber 110, and the like.
  • the control unit 150 is composed of a computer including a CPU and a storage unit, and controls each unit of the floor surface unit 10 and the like.
  • a program in which a group of steps (instructions) for controlling the operation of the wafer transfer module 20 and the wafer processing chamber 110 is recorded is recorded in the storage unit.
  • the program is stored on a storage medium such as a hard disk, compact disk, magnetic optical disk, memory card, etc., from which it is installed in the computer.
  • the wafer W is taken out from the carrier C by a wafer transfer mechanism (not shown) in the atmospheric transfer chamber 140.
  • the gate valve 133 is opened, the wafer transfer mechanism enters the load lock chamber 130 and places the wafer W on the stage 131.
  • the gate valve 133 is closed and the inside of the load lock chamber 130 is switched from the atmospheric pressure atmosphere to the vacuum atmosphere.
  • the gate valve 132 is opened and the wafer W is conveyed into the vacuum transfer chamber 120 by the wafer transfer mechanism 160.
  • one wafer transfer module 20 stands by in the vicinity of the connection position of the load lock chamber 130.
  • the magnetic field generated by the floor surface side coil 15 provided on the floor surface portion 10 is used to raise the elevating pin 241 by magnetic levitation.
  • the module side coil 35 is turned off so as not to be affected by the magnetic field generated for executing the elevating operation of the elevating pin 241. Therefore, the wafer transfer module 20 is placed on the upper surface of the floor surface portion 10 of the vacuum transfer chamber 120.
  • the tip of the elevating pin 241 projects above the mounting surface of the wafer W, and the wafer W is delivered from the wafer transfer mechanism 160 to the elevating pin 241.
  • the wafer W is placed on a predetermined mounting surface by lowering the elevating pin 241 and passing the wafer W from the elevating pin 241 to the stage 21.
  • the gate valve 132 is closed.
  • the module-side coil 35 provided in the wafer transfer module 20 is turned on, and the wafer processing chamber 110 in which the wafer W is processed by magnetic levitation is performed.
  • the wafer transfer module 20 is moved toward.
  • the wafer processing chamber 110 which is the transfer destination of the wafer W, processes the wafer W following the processing of the other wafer W
  • the support plate 41 of the elevating mechanism 4 is lowered to process the preceding wafer W.
  • the other wafer transfer module 20 used in the above is removed from the wafer processing chamber 110.
  • the other wafer transfer module 20 transfers the processed wafer W to the transfer position with the load lock chamber 130.
  • the support plate 41 is lowered and the closing module 50 is removed from the wafer processing chamber 110. ..
  • the closing module 50 moves to the evacuation chamber 121.
  • the wafer transfer module 20 that has received the new wafer W moves from the position where the wafer W is received from the load lock chamber 130 to the lower side of the wafer processing chamber 110 in which the wafer W is processed. After that, it stops at a predetermined position on the support plate 41, adjusts the direction, and then turns off the module side coil 35. As a result, the magnetic levitation state is released, and the wafer transfer module 20 is placed on the support plate 41.
  • the support plate 41 is raised and the stage 21 is inserted into the wafer processing chamber 110, so that the wafer W is carried into the wafer processing chamber 110.
  • the opening 111 of the wafer processing chamber 110 is closed by the traveling plate 22, and an airtight processing space is formed in the wafer processing chamber 110 (FIG. 7).
  • the wafer W is heated by the stage 21, the temperature is raised to a preset temperature, and the processing gas is supplied from the processing gas supply unit 112 into the wafer processing chamber 110. In this way, the desired processing on the wafer W is executed.
  • the heating of the wafer W is stopped and the supply of the processing gas is stopped. Further, the wafer W may be cooled by supplying a cooling gas into the wafer processing chamber 110 as needed. After that, the support plate 41 is lowered and the wafer W is carried out from the wafer processing chamber 110.
  • the next wafer W may be carried into the wafer processing chamber 110 after the wafer W has been carried out by using another wafer transfer module 20, and the processing may be executed.
  • the opening 111 may be closed by using the closing module 50 to enter a standby state. During the standby state, the inside of the wafer processing chamber 110 may be cleaned.
  • the wafer transfer module 20 turns on the module side coil 35 and moves by magnetic levitation to the transfer position of the wafer W to the load lock chamber 130. After that, the processed wafer W is delivered to the load lock chamber 130 and the atmospheric transport chamber 140 in the reverse order of the delivery, and is carried into the carrier C for accommodating the processed wafer W.
  • the wafer transfer module 20 moves to the cleaning chamber 123 after each wafer W processing or after a predetermined number of wafer W processings have been performed. .. In the cleaning chamber 123, cleaning is performed, reaction products and the like are removed, and the stage 21 is in a clean state. The wafer transfer module 20 moves to the vacuum transfer chamber 120 and transfers the wafer W again.
  • the wafer processing chamber 110 is provided on the upper surface side of the vacuum transfer chamber 120. Therefore, as compared with the case where the wafer processing chamber 110 is connected to the side surface of the vacuum transfer chamber 120, for example, it is possible to suppress an increase in the footprint of the wafer processing apparatus 100. Further, the wafer W is conveyed by using magnetic levitation. Therefore, a telescopic arm type wafer transfer mechanism is provided in the vacuum transfer chamber 120 to suppress an increase in the footprint and height of the vacuum transfer chamber 120 itself as compared with the case where the wafer W is carried in and out. You can also.
  • the stage 21 of the present embodiment is provided in the wafer transfer module 20 which is movable by magnetic levitation. Therefore, as compared with the case where the stage 21 is fixedly provided in the wafer processing chamber 110, the cleaning chamber 123 can be used to independently clean the stage 21. As a result, the stage 21 that is in direct contact with the wafer W can be kept in a clean state at all times, and the occurrence of contamination of the wafer W due to the generation of particles or the like can be suppressed.
  • the ascending movement of the wafer transfer module 20 when the stage 21 is inserted into the wafer processing chamber 110 is not limited to the example in which the elevating mechanism 4 is used as described above.
  • the wafer transfer module 20 may be moved upward by increasing the amount of magnetic levitation.
  • a support mechanism 36 may be provided on the ceiling surface of the vacuum transfer chamber 120 to support the wafer transfer module 20.
  • the support mechanism 36 has a support position (position shown in FIG. 9) in which the traveling plate 22 is supported from the lower surface side with the stage 21 inserted in the wafer processing chamber 110, and a retracted position retracted from the support position (position shown in FIG. 9).
  • a support member 361 that can be moved to and from the position shown in FIG. 8) is provided.
  • the support member 361 enters the notch portion 362 formed on the lower surface of the traveling plate 22 and supports the traveling plate 22 from the lower surface side.
  • the function of the support mechanism 36 may be provided on the wafer transfer module 20 side.
  • the wafer transfer module 20 has a disk-shaped traveling plate 22 having a diameter larger than that of the stage 21 on the lower side of the disk-shaped stage 21. It has an arranged configuration.
  • the wafer transfer module 20a may be configured by forming the stage 21 and the traveling plate 22 as an integral body. At this time, the phrase "formed as an integral body" can be exemplified as a case where the entire wafer transfer module 20a is configured without distinguishing between the stage 21 and the traveling plate 22.
  • an O-ring 23 is provided on the upper surface of the wafer transfer module 20a, while a recess into which the upper side of the wafer transfer module 20a can be inserted is provided on the lower surface of the opening 111 on the wafer processing chamber 110 side. It may be provided.
  • the upper side of the wafer transfer module 20a is inserted into the recess forming a part of the wafer processing chamber 110, and the O-ring 23 provided on the upper surface of the wafer transfer module 20a is brought into contact with the upper surface of the recess to form a wafer.
  • the inside of the processing chamber 110 can be kept airtight.
  • the number and layout of the wafer processing chambers 110 arranged on the upper surface side of the vacuum transfer chamber 120 are not limited to the examples shown in FIGS. 1 to 3.
  • the number of wafer processing chambers 110 arranged may be increased or decreased as needed.
  • the case where only one wafer processing chamber 110 is provided on the upper surface of the vacuum transfer chamber 120 is also included in the technique of the present disclosure.
  • the arrangement of the vacuum transfer chamber 120 is not limited to the case where the long side of the vacuum transfer chamber 120 having a rectangular planar shape is arranged in the front-rear direction as shown in FIG.
  • the vacuum transfer chamber 120 may be arranged with the long side facing left and right when viewed from the load port 141 side.
  • the planar shape of the vacuum transfer chamber 120 various shapes may be adopted depending on the shape of the area in which the wafer processing device 100 is arranged. For example, it may be a square, a polygon having a pentagon or more, a circle, or an ellipse.
  • the substrate transfer chamber in which the wafer W is transferred to the wafer processing chamber 110 by using the wafer transfer module 20 is not limited to the case where the substrate transfer chamber is configured by the vacuum transfer chamber 120 having a vacuum atmosphere inside.
  • the wafer transfer module 20 of the present disclosure can also be applied to a wafer processing apparatus having a wafer processing chamber 110 provided on the upper surface side of the substrate transfer chamber having an atmospheric pressure atmosphere inside. In this case, it is not an essential requirement to provide the load lock chamber 130 for the wafer processing apparatus, and the wafer W taken out from the carrier C to the atmospheric transport chamber 140 may be directly carried into the substrate transport chamber. ..

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  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Non-Mechanical Conveyors (AREA)
PCT/JP2021/029759 2020-08-24 2021-08-12 基板を処理する装置、及び基板を処理する方法 Ceased WO2022044834A1 (ja)

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CN202512035566.9A CN121908843A (zh) 2020-08-24 2021-08-12 对基板进行处理的装置和对基板进行处理的方法
CN202180050414.3A CN115916673B (zh) 2020-08-24 2021-08-12 对基板进行处理的装置和对基板进行处理的方法
CN202512035570.5A CN121908844A (zh) 2020-08-24 2021-08-12 对基板进行处理的装置和对基板进行处理的方法
KR1020257005057A KR20250029269A (ko) 2020-08-24 2021-08-12 기판을 처리하는 장치 및 기판을 처리하는 방법
US18/021,157 US12512354B2 (en) 2020-08-24 2021-08-12 Substrate processing apparatus and substrate processing method
KR1020237008815A KR102785462B1 (ko) 2020-08-24 2021-08-12 기판을 처리하는 장치 및 기판을 처리하는 방법
KR1020257005056A KR102914542B1 (ko) 2020-08-24 2021-08-12 기판을 처리하는 장치 및 기판을 처리하는 방법
US19/360,854 US20260047386A1 (en) 2020-08-24 2025-10-16 Substrate processing device and substrate processing method
US19/360,847 US20260047385A1 (en) 2020-08-24 2025-10-16 Substrate processing device and substrate processing method

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US20260047386A1 (en) 2026-02-12
CN115916673A (zh) 2023-04-04
KR102785462B1 (ko) 2025-03-21
CN115916673B (zh) 2026-02-03
US12512354B2 (en) 2025-12-30
KR20250029986A (ko) 2025-03-05
KR20250029269A (ko) 2025-03-04
US20230317488A1 (en) 2023-10-05
CN121908844A (zh) 2026-04-21
US20260047385A1 (en) 2026-02-12
CN121908843A (zh) 2026-04-21
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