WO2022032765A1 - 触控显示面板及其制备方法 - Google Patents

触控显示面板及其制备方法 Download PDF

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Publication number
WO2022032765A1
WO2022032765A1 PCT/CN2020/113480 CN2020113480W WO2022032765A1 WO 2022032765 A1 WO2022032765 A1 WO 2022032765A1 CN 2020113480 W CN2020113480 W CN 2020113480W WO 2022032765 A1 WO2022032765 A1 WO 2022032765A1
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WIPO (PCT)
Prior art keywords
electrode
layer
insulating layer
display panel
touch display
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PCT/CN2020/113480
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English (en)
French (fr)
Inventor
黄东晨
郑净远
Original Assignee
惠州市华星光电技术有限公司
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Priority to US16/982,254 priority Critical patent/US11747937B2/en
Publication of WO2022032765A1 publication Critical patent/WO2022032765A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to the field of display technology, and in particular, to a touch display panel in the form of active light-emitting LEDs and a preparation method thereof.
  • An object of the present invention is to provide a touch display panel that integrates Mini LED, Micro A new touch display panel with LED combined with touch.
  • the present invention provides a touch display panel, comprising: a substrate, including a main display area and a non-display area;
  • a plurality of first electrodes are arranged on the substrate and correspond to the main display area; a plurality of second electrodes are arranged on the substrate and correspond to the main display area, the first electrodes and the second electrodes
  • the electrodes are arranged at intervals in sequence; a first insulating layer is arranged on the substrate and covers the first electrode and the second electrode, and a through hole is arranged above the first insulating layer corresponding to the first electrode, so The through hole extends to the upper surface of the first electrode; a connection layer is arranged on the first insulating layer and located in the through hole, and the connection layer is connected to the first electrode; LED is arranged on the first electrode
  • the first insulating layer corresponds to the first electrode and the second electrode; and a thin film transistor is disposed in the non-display area of the substrate.
  • the thin film transistor includes: a gate electrode disposed on the substrate; a second insulating layer disposed on the substrate and covering the gate electrode; an active layer disposed on the second insulating layer ; The source-drain electrode layer is arranged on the active layer and the second insulating layer.
  • the LEDs include MicroLEDs or Mini LEDs.
  • the material of the first electrode includes copper or molybdenum; and/or, the material of the second electrode includes copper or molybdenum; and/or the material of the connection layer includes copper or molybdenum; and/or,
  • the first insulating layer includes SiNx and SiO2.
  • the gate, the first electrode and the second electrode are arranged in the same layer; and/or, the second insulating layer and the first insulating layer are arranged in the same layer; and/or, the The source-drain electrode layer and the connection layer are arranged in the same layer.
  • the first electrode forms a first electrode pattern in the display area; the second electrode forms a second electrode pattern in the display area; the first electrode pattern is arranged laterally, and the second electrode pattern Horizontally arranged, the first electrode pattern and the second electrode pattern are not connected to each other.
  • the source-drain electrode layer includes a source electrode and a drain stage, and the source electrode and the drain stage are connected to the active layer.
  • the thin film transistor includes a low temperature polysilicon thin film transistor or an oxide thin film transistor.
  • the present invention also provides a preparation method of a touch display panel, including: providing a substrate and an LED, the substrate includes a main display area and a non-display area; forming a first metal layer on the substrate, the first metal layer The layer includes the first electrode, the second electrode and the gate electrode which are arranged at intervals in sequence, the first electrode and the second electrode are arranged in the main display area, and the gate electrode is arranged in the non-display area; forming An insulating layer is on the substrate, the insulating layer includes a first insulating layer and a second insulating layer, the first insulating layer is arranged in the display area and covers the first electrode and the second electrode, so The second insulating layer is arranged on the non-display area and covers the gate; an active layer is formed on the second insulating layer, and a through hole is opened in the first insulating layer corresponding to the first electrode , the through hole extends to the upper surface of the first electrode; a second metal layer is formed on the insulating layer
  • the step of forming an active layer on the second insulating layer and opening a through hole in the first insulating layer corresponding to the first electrode includes: depositing a layer of active material on on the insulating layer; the active material is patterned by photolithography to form a through hole pattern and the active layer; the through hole is opened in the first insulating layer in the area of the through hole pattern, and the through hole is formed in the first insulating layer.
  • a hole extends to the upper surface of the first electrode.
  • the present invention provides a touch display panel, a novel touch display panel combining Mini LED and Micro LED with touch in the form of active light emission.
  • the invention arranges the thin film transistors and the touch electrodes on the substrate, so that the MicroLED or Mini LED can realize three-color display.
  • the present invention also provides a preparation method of a touch display panel. During preparation, the touch electrode structure in the display area and the thin film transistor structure in the non-display area are prepared together, which can improve the preparation efficiency.
  • FIG. 1 is a schematic structural diagram of a touch display panel provided by the present invention.
  • FIG. 2 is a plan view of a first electrode and a second electrode pattern provided by the present invention.
  • FIG. 3 is a schematic structural diagram of step S1 of the manufacturing method of the touch display panel provided by the present invention.
  • FIG. 4 is a schematic structural diagram of step S201 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 5 is a schematic structural diagram of step S202 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 6 is a schematic structural diagram of step S203 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 7 is a schematic structural diagram of step S401 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 8 is a schematic structural diagram of step S402 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 9 is a schematic structural diagram of step S403 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 10 is a schematic structural diagram of step S403 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 11 is a schematic structural diagram of step S5 of the method for fabricating a touch display panel provided by the present invention.
  • FIG. 12 is a schematic structural diagram of step S7 of the method for fabricating a touch display panel provided by the present invention.
  • substrate 10 first electrode 1011; second electrode 1012;
  • protective layer 107 main display area 110; non-display area 120;
  • Source-drain electrode layer 1032 first metal layer 101; second metal layer 103;
  • the first connection line 113 The first connection line 113 ; the second connection line 114 .
  • a feature defined as “first” or “second” may expressly or implicitly include one or more of that feature.
  • plural means two or more.
  • the term “comprising” and any variations thereof are intended to cover non-exclusive inclusion.
  • the terms “installed”, “connected” and “connected” should be understood in a broad sense, for example, it may be a support connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements.
  • installed should be understood in a broad sense, for example, it may be a support connection or a detachable connection Connection, or integral connection; can be mechanical connection, can also be electrical connection; can be directly connected, can also be indirectly connected through an intermediate medium, can be internal communication between two elements.
  • the present invention provides a touch display panel 100 including: a substrate 10 , a plurality of first electrodes 1011 , a plurality of second electrodes 1012 , a first insulating layer 1021 , a connection layer 1031 , LEDs 106 , and thin film transistors and the protective layer 107 .
  • the substrate 10 includes a main display area 110 and a non-display area 120 .
  • the first electrode 1011 is disposed on the substrate 10 and corresponds to the main display area 110 , and the first electrode 1011 is a receiving electrode (Rx).
  • the second electrode 1012 is disposed on the substrate 10 and corresponds to the main display area 110 , the first electrode 1011 and the second electrode 1012 are spaced in sequence, and the second electrode 1012 is a transmission electrode (Tx ).
  • the first insulating layer 1021 is disposed on the substrate 10 and covers the first electrode 1011 and the second electrode 1012 .
  • the first insulating layer 1021 defines a through hole 104 above the first electrode 1011 , the through hole 104 extends to the upper surface of the first electrode 1011 .
  • connection layer 1031 is disposed on the first insulating layer 1021 and in the through hole 104 , and the connection layer 1031 connects the plurality of the first electrodes 1011 .
  • the LED 106 is disposed on the first insulating layer 1021 and corresponds to the first electrode 1011 and the second electrode 1012 .
  • the LEDs 106 include MicroLEDs or Mini LEDs.
  • the thin film transistor is disposed in the non-display area 120 of the substrate 10 .
  • the thin film transistor includes: a gate electrode 1013 , a second insulating layer 1022 , an active layer 105 and a source-drain electrode layer 1032 .
  • the gate 1013 is disposed on the substrate 10 .
  • the gate 1013 , the first electrode 1011 and the second electrode 1012 are disposed in the same layer, and are specifically disposed in the first metal layer 101 .
  • the second insulating layer 1022 is disposed on the substrate 10 and covers the gate electrode 1013 .
  • the second insulating layer 1022 is disposed in the same layer as the first insulating layer 1021, and is specifically disposed in the insulating layer.
  • the active layer 105 is disposed on the second insulating layer 1022 .
  • the source-drain electrode layer 1032 is disposed on the active layer 105 and the second insulating layer 1022 .
  • the source-drain electrode layer 1032 and the connection layer 1031 are disposed in the same layer, and are specifically disposed in the second metal layer 103 .
  • the source-drain electrode layer 1032 includes a source electrode and a drain stage, and the source electrode and the drain stage are connected to the active layer 105 .
  • the protective layer 107 is disposed on the substrate 10 to cover the devices in the main display area 110 and the non-display area 120 , and the protective layer 107 can also be an encapsulation layer.
  • the material of the first electrode 1011 includes copper or molybdenum; and/or the material of the second electrode 1012 includes copper or molybdenum; and/or the material of the connection layer 1031 includes copper or Molybdenum; and/or, the material of the insulating layer includes SiNx and SiO2.
  • the first electrode 1011 forms a first electrode pattern 111 in the display area; the second electrode 1012 forms a second electrode pattern 112 in the display area; the The first electrode patterns 111 are arranged laterally, the second electrode patterns 112 are arranged laterally, and the first electrode patterns 111 and the second electrode patterns 112 are not connected to each other.
  • the adjacent first electrode patterns 111 are connected by the first connection line 113 (the connection layer 1031 in FIG. 1 ), which needs to be wired across the membrane layer; the adjacent second electrode patterns 112 are connected by the second connection line 114, The adjacent second electrode patterns 112 are patterned on the first metal layer 101 together with the second connection lines 114 .
  • the first electrode pattern 111 and the second electrode pattern 112 can realize three-color display of the LED 106 of the touch display panel 100 .
  • the present invention provides a touch display panel 100, which is a novel touch display panel 100 that combines Mini LED and Micro LED with touch in the form of active light emission.
  • the thin film transistors and the touch electrodes are arranged on the substrate 10, so that the MicroLED or Mini LED can realize three-color display.
  • the present invention also provides a preparation method of a touch display panel for preparing the touch display panel 100 , and the preparation method of the touch display panel specifically includes the following steps.
  • the substrate 10 includes a main display area 110 and a non-display area 120, and the LEDs 106 include Micro LEDs or Mini LEDs.
  • a first metal layer 101 is formed on the substrate 10.
  • the first metal layer 101 includes the first electrode 1011, the second electrode 1012 and the gate electrode 1013 which are arranged at intervals in sequence.
  • the first electrode 1011 and the gate electrode 1013 The second electrode 1012 is disposed in the main display area 110 , and the gate electrode 1013 is disposed in the non-display area 120 .
  • step S2 includes the following steps S201 to S203.
  • S202 coat photoresist on the first metal layer 101, and use a mask to expose and develop the photoresist to form an electrode pattern 201 (including the first electrode and the second electrode of the main display area 110). the electrode pattern 112, and the gate pattern of the non-display area 120).
  • the first metal layer 101 is patterned by photolithography to form the first electrode 1011 , the second electrode 1012 and the gate electrode 1013 .
  • an insulating layer is formed on the substrate 10, the insulating layer includes a first insulating layer 1021 and the second insulating layer 1022, and the first insulating layer 1021 is disposed in the display area And cover the first electrode 1011 and the second electrode 1012 , the second insulating layer 1022 is disposed in the non-display area 120 and covers the gate electrode 1013 .
  • an insulating material such as SiNx and SiO2 is deposited on the substrate 10 by chemical vapor deposition.
  • the step of forming the active layer 105 on the second insulating layer 1022 and opening the through hole 104 in the first insulating layer 1021 corresponding to the first electrode 1011 specifically includes the following steps S401 - S403 .
  • S402 coat a layer of photoresist 202 on the surface of the active metal material, and then expose and develop through a mask to form a photoresist pattern ( 203 and 204 ), and the photoresist pattern includes a display area through hole pattern 203 and active layer pattern 204 of the non-display area 120 .
  • the active metal material is patterned according to the photoresist pattern to form the active layer 105 , and the active layer 105 is formed between the first insulating layer 1021 and the second insulating layer 1022 A gap is formed by etching.
  • a through hole 104 is formed in the first insulating layer 1021 in the through hole pattern area, and the through hole 104 extends to the upper surface of the first electrode 1011 .
  • a second metal layer 103 is formed on the insulating layer and the active layer 105.
  • the second metal layer 103 includes a connection layer 1031 and a source and drain layer.
  • the connection layer 1031 On the first insulating layer 1021 and in the through hole 104, the connection layer 1031 connects the first electrode 1011, the source-drain electrode layer 1032 is provided on the active layer 105 and on the second insulating layer 1022 .
  • step S5 specifically includes the following steps S501-S502.
  • the first electrode patterns 111 are arranged laterally, the second electrode patterns 112 are arranged laterally, and the first electrode patterns 111 and the second electrode patterns 112 are not connected to each other.
  • the LED 106 is punched and disposed on the insulating layer, and the LED 106 corresponds to the first electrode 1011 and the second electrode 1012 .
  • the present invention provides a preparation method of a touch display panel.
  • the LED and the thin film transistor are combined to form the touch display panel 100 in the form of active light emission.
  • the touch electrode structure in the display area and the thin film transistor structure in the non-display area 120 are prepared together, which can improve the preparation efficiency.

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Abstract

一种触控显示面板（100）及其制备方法，该触控显示面板（100）为通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板（100）。将薄膜晶体管与触控电极在基板（10）上进行排布，可以使MicroLED或Mini LED实现三色的显示。

Description

触控显示面板及其制备方法 技术领域
本发明涉及显示技术领域，尤其涉及一种主动发光的形式LED的触控显示面板及其制备方法。
 背景技术
在现今的信息社会下，许多信息产品已由传统的键盘或鼠标等输入装置，转变为使用触控面板(touch sensing panel)作为输入装置，其中同时具有触控与显示功能的触控显示面板更是成为现今最流行的产品之一。
 技术问题
随着当前Mini LED及Micro LED和大尺寸触控的快速发展，急需要具有主动发光的大尺寸触控显示。
 技术解决方案
本发明一目的是提供一种触控显示面板，以主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板。
本发明提供一种触控显示面板，包括：基板，包括主显示区以及非显示区；
多个第一电极，设于所述基板上且对应所述主显示区；多个第二电极，设于所述基板上且对应所述主显示区，所述第一电极与所述第二电极依次间隔设置；第一绝缘层，设于所述基板上且覆盖所述第一电极以及所述第二电极，所述第一绝缘层对应所述第一电极的上方设置有通孔，所述通孔延伸至所述第一电极的上表面；连接层，设于所述第一绝缘层上位于所述通孔中，所述连接层连接所述第一电极；LED，设于所述第一绝缘层上且对应所述第一电极以及所述第二电极；以及薄膜晶体管，设于所述基板的非显示区。
进一步地，所述薄膜晶体管包括：栅极，设于所述基板上；第二绝缘层，设于所述基板上且覆盖所述栅极；有源层，设于所述第二绝缘层上；源漏电极层，设于所述有源层以及所述第二绝缘层上。
进一步地，所述LED包括MicroLED或Mini LED。
进一步地，所述第一电极的材料包括铜或钼；和/或，所述第二电极的材料包括铜或钼；和/或，所述连接层的材料包括铜或钼；和/或，所述第一绝缘层包括SiNx及SiO2。
进一步地，所述栅极、所述第一电极与所述第二电极同层设置；和/或，所述第二绝缘层与所述第一绝缘层同层设置；和/或，所述源漏电极层与所述连接层同层设置。
进一步福，所述第一电极在所述显示区形成第一电极图案；所述第二电极在所述显示区形成第二电极图案；所述第一电极图案横向设置，所述第二电极图案横向设置，所述第一电极图案与所述第二电极图案互不连接。
进一步地，所述源漏电极层包括源极以及漏级，所述源极以及所述漏级连接所述有源层。
进一步地，所述薄膜晶体管包括低温多晶硅薄膜晶体管或氧化物薄膜晶体管。
本发明还提供一种触控显示面板的制备方法，包括：提供一基板以及LED，所述基板包括主显示区以及非显示区；形成第一金属层于所述基板上，所述第一金属层包括述依次间隔设置的第一电极、第二电极以及栅极，所述第一电极以及所述第二电极设于所述主显示区，所述栅极设于所述非显示区；形成绝缘层于所述基板上，所述绝缘层包括第一绝缘层以及第二绝缘层，所述第一绝缘层设于所述显示区且覆盖所述第一电极以及所述第二电极，所述第二绝缘层设于所述非显示区且覆盖所述栅极；形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔，所述通孔延伸至所述第一电极的上表面；形成第二金属层于所述绝缘层以及所述有源层上，所述第二金属层包括连接层以及源漏极层，所述连接层位于所述第一绝缘层上且设于所述通孔中，所述连接层将所述第一电极进行连接，所述源漏电极层设于所述有源层以及所述第二绝缘层上；对所述第一电极以及所述第二电极图形化形成第一电极图案以及第二电极图案；将所述LED打件及设于所述绝缘层上，所述LED对应所述第一电极以及所述第二电极。
进一步地，在所述形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔的步骤中，包括：沉积一层有源材料于所述绝缘层上；光刻所述有源材料图案化形成通孔图案以及所述有源层；在所述通孔图案的区域对所述第一绝缘层开设所述通孔，所述通孔延伸至所述第一电极的上表面。
 有益效果
本申请的有益效果为：本发明一方面提供一种触控显示面板，通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板。本发明将薄膜晶体管与触控电极在基板上进行排布，可以使MicroLED或Mini LED实现三色的显示。本发明还提供一种触控显示面板的制备方法，在制备的时候，显示区的触控电极结构与非显示区的薄膜晶体管结构一同制备，可以提高制备的效率。
 附图说明
下面结合附图，通过对本申请的具体实施方式详细描述，将使本申请的技术方案及其它有益效果显而易见。
图1为本发明提供的触控显示面板的结构示意图。
图2为本发明提供第一电极以及第二电极图案的平面图。
图3为本发明提供的触控显示面板制备方法步骤S1的结构示意图。
图4为本发明提供的触控显示面板制备方法步骤S201的结构示意图。
图5为本发明提供的触控显示面板制备方法步骤S202的结构示意图。
图6为本发明提供的触控显示面板制备方法步骤S203的结构示意图。
图7为本发明提供的触控显示面板制备方法步骤S401的结构示意图。
图8为本发明提供的触控显示面板制备方法步骤S402的结构示意图。
图9为本发明提供的触控显示面板制备方法步骤S403的结构示意图。
图10为本发明提供的触控显示面板制备方法步骤S403的结构示意图。
图11为本发明提供的触控显示面板制备方法步骤S5的结构示意图。
图12为本发明提供的触控显示面板制备方法步骤S7的结构示意图。
触控显示面板100；
基板10；第一电极1011；第二电极1012；
第一绝缘层1021；连接层1031；LED106；
保护层107；主显示区110；非显示区120；
栅极1013；第二绝缘层1022；有源层105；
源漏电极层1032；第一金属层101；第二金属层103；
第一电极图案111；第二电极图案112；通孔104；
第一连接线113；第二连接线114。
 本发明的实施方式
这里所公开的具体结构和功能细节仅仅是代表性的，并且是用于描述本申请的示例性实施例的目的。但是本申请可以通过许多替换形式来具体实现，并且不应当被解释成仅仅受限于这里所阐述的实施例。
在本申请的描述中，需要理解的是，术语“中心”、“横向”、“上”、“下”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个该特征。在本申请的描述中，除非另有说明，“多个”的含义是两个或两个以上。另外，术语“包括”及其任何变形，意图在于覆盖不排他的包含。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是支撑连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通。对于本领域的普通技术人员而言，可以具体情况理解上述术语在本申请中的具体含义。
这里所使用的术语仅仅是为了描述具体实施例而不意图限制示例性实施例。除非上下文明确地另有所指，否则这里所使用的单数形式“一个”、“一项”还意图包括复数。还应当理解的是，这里所使用的术语“包括”和/或“包含”规定所陈述的特征、整数、步骤、操作、单元和/或组件的存在，而不排除存在或添加一个或更多其他特征、整数、步骤、操作、单元、组件和/或其组合。
如图1所示，本发明提供一种触控显示面板100，包括：基板10、多个第一电极1011、多个第二电极1012、第一绝缘层1021、连接层1031、LED106、薄膜晶体管以及保护层107。
所述基板10包括主显示区110以及非显示区120。
所述第一电极1011设于所述基板10上且对应所述主显示区110，所述第一电极1011为接受电极（Rx）。
所述第二电极1012设于所述基板10上且对应所述主显示区110，所述第一电极1011与所述第二电极1012依次间隔设置，所述第二电极1012为传输电极（Tx）。
所述第一绝缘层1021设于所述基板10上且覆盖所述第一电极1011以及所述第二电极1012，所述第一绝缘层1021对应所述第一电极1011的上方开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。
所述连接层1031设于所述第一绝缘层1021上且设于所述通孔104中，所述连接层1031连接多个所述第一电极1011。
所述LED106设于所述第一绝缘层1021上且对应所述第一电极1011以及所述第二电极1012。所述LED106包括MicroLED或Mini LED。
所述薄膜晶体管设于所述基板10的非显示区120。
所述薄膜晶体管包括：栅极1013、第二绝缘层1022、有源层105以及源漏电极层1032。
所述栅极1013设于所述基板10上。所述栅极1013、所述第一电极1011与所述第二电极1012同层设置，具体设置在第一金属层101中。
所述第二绝缘层1022设于所述基板10上且覆盖所述栅极1013。所述第二绝缘层1022与所述第一绝缘层1021同层设置，具体设置在绝缘层中。
所述有源层105设于所述第二绝缘层1022上。
所述源漏电极层1032设于所述有源层105以及所述第二绝缘层1022上。所述源漏电极层1032与所述连接层1031同层设置，具体设置在第二金属层103中。
所述源漏电极层1032包括源极以及漏级，所述源极以及所述漏级连接所述有源层105。
所述保护层107设于基板10上，覆盖主显示区110以及非显示区120的器件，所述保护层107也可为封装层。
在一实施例中，所述第一电极1011的材料包括铜或钼；和/或，所述第二电极1012的材料包括铜或钼；和/或，所述连接层1031的材料包括铜或钼；和/或，所述绝缘层的材料包括SiNx及SiO2。
如图2所示，在一实施例中，所述第一电极1011在所述显示区形成第一电极图案111；所述第二电极1012在所述显示区形成第二电极图案112；所述第一电极图案111横向设置，所述第二电极图案112横向设置，所述第一电极图案111与所述第二电极图案112互不连接。
相邻的第一电极图案111通过第一连接线113（图1中连接层1031）进行连接，需要进行跨膜层进行布线；相邻的第二电极图案112通过第二连接线114进行连接，相邻的第二电极图案112的与第二连接线114一同在第一金属层101图案化。第一电极图案111以及第二电极图案112可以实现触控显示面板100的LED106的三色的显示。
本发明提供一种触控显示面板100，通过主动发光的形式将Mini LED、Micro LED结合触控的新型触控显示面板100。本发明将薄膜晶体管与触控电极在基板10上进行排布，可以使MicroLED或Mini LED实现三色的显示。
本发明还提供一种触控显示面板的制备方法，用以制备得到所述触控显示面板100，所述触控显示面板的制备方法具体包括如下步骤。
S1、如图3所示，提供一基板10以及LED106，所述基板10包括主显示区110以及非显示区120，所述LED106包括MicroLED或Mini LED。
S2、形成第一金属层101于所述基板10上，所述第一金属层101包括述依次间隔设置的第一电极1011、第二电极1012以及栅极1013，所述第一电极1011以及所述第二电极1012设于所述主显示区110，所述栅极1013设于所述非显示区120。
具体地，步骤S2包括如下步骤S201~S203。
S201、如图4所示，沉积一金属材料于所述基板10上形成第一金属层101。
S202、如图5所示，涂覆光刻胶于所述第一金属层101上，采用掩膜板对光刻胶曝光显影形成电极图案201（包括主显示区110的第一电极和第二电极图案112，以及非显示区120的栅极图案）。
S203、如图6所示，根据所述电极图案，光刻所述第一金属层101图案化形成所述第一电极1011、所述第二电极1012以及所述栅极1013。
S3、如图7所示，形成绝缘层于所述基板10上，所述绝缘层包括第一绝缘层1021以及所述第二绝缘层1022，所述第一绝缘层1021设于所述显示区且覆盖所述第一电极1011以及所述第二电极1012，所述第二绝缘层1022设于所述非显示区120且覆盖所述栅极1013。
具体地，通过化学气相沉积一SiNx、SiO2等绝缘材料于所述基板10上。
S4、形成有源层105于所述第二绝缘层1022上，并在所述第一绝缘层1021对应所述第一电极1011处开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。
所述形成有源层105于所述第二绝缘层1022上，并在所述第一绝缘层1021对应所述第一电极1011处开设通孔104的步骤中，具体包括如下步骤S401~S403。
S401、如图7所示，沉积一层有源材料于所述绝缘层上，沉积的方法采用化学气相沉积的方法。
S402、如图8所示，在有源金属材料表面涂覆一层光刻胶202，然后通过掩膜板曝光显影形成光刻胶图案（203及204），所述光刻胶图案包括显示区的通孔图案203以及非显示区120的有源层图案204。
S403、如图9以及图10所示，根据所述光刻胶图案光刻有源金属材料图案化形成有源层105，并在所述第一绝缘层1021与所述第二绝缘层1022之间刻蚀形成一间隙。
在所述通孔图案区域对所述第一绝缘层1021开设通孔104，所述通孔104延伸至所述第一电极1011的上表面。
S5、如图11所示，形成第二金属层103与所述绝缘层以及所述有源层105上，所述第二金属层103包括连接层1031以及源漏极层，所述连接层1031设于所述第一绝缘层1021上且位于所述通孔104中，所述连接层1031将所述第一电极1011进行连接，所述源漏电极层1032设于所述有源层105以及所述第二绝缘层1022上。
具体地，步骤S5具体包括如下步骤S501~S502。
S501、沉积一金属材料于所述基板10上形成第二金属层103。
S502、光刻所述第二金属层103化形成所述连接层1031以及源漏极层。
S6、对所述第一电极1011以及所述第二电极1012图形化形成第一电极图案111以及第二电极图案112。
所述第一电极图案111横向设置，所述第二电极图案112横向设置，所述第一电极图案111与所述第二电极图案112互不连接。
S7、如图12所示，将所述LED106打件及设于所述绝缘层上，所述LED106对应所述第一电极1011以及所述第二电极1012。
本发明提供一种触控显示面板的制备方法，通过将触控电极、Mini LED、Micro LED以及薄膜晶体管结合形成主动发光的形式的触控显示面板100。
在制备的时候，显示区的触控电极结构与非显示区120的薄膜晶体管结构一同制备，可以提高制备的效率。
综上所述，虽然本申请已以优选实施例揭露如上，但上述优选实施例并非用以限制本申请，本领域的普通技术人员，在不脱离本申请的精神和范围内，均可作各种更动与润饰，因此本申请的保护范围以权利要求界定的范围为准。

Claims (15)

  1. 一种触控显示面板，其中，包括：
    基板，包括主显示区以及非显示区；
    多个第一电极，设于所述基板上且对应所述主显示区；
    多个第二电极，设于所述基板上且对应所述主显示区，所述第一电极与所述第二电极依次间隔设置；
    第一绝缘层，设于所述基板上且覆盖所述第一电极以及所述第二电极，所述第一绝缘层对应所述第一电极的上方设置有通孔，所述通孔延伸至所述第一电极的上表面；
    连接层，设于所述第一绝缘层上且位于所述通孔中，所述连接层连接所述第一电极；
    LED，设于所述第一绝缘层上且对应所述第一电极以及所述第二电极；以及
    薄膜晶体管，设于所述基板的非显示区。
  2. 如权利要求1所述的触控显示面板，其中，
    所述薄膜晶体管包括：
    栅极，设于所述基板上；
    第二绝缘层，设于所述基板上且覆盖所述栅极；
    有源层，设于所述第二绝缘层上；
    源漏电极层，设于所述有源层以及所述第二绝缘层上。
  3. 如权利要求1所述的触控显示面板，其中，
    所述LED包括MicroLED或Mini LED。
  4. 如权利要求1所述的触控显示面板，其中，
    所述第一电极的材料包括铜或钼。
  5. 如权利要求1所述的触控显示面板，其中，
    所述第二电极的材料包括铜或钼。
  6. 如权利要求1所述的触控显示面板，其中，
    所述连接层的材料包括铜或钼。
  7. 如权利要求1所述的触控显示面板，其中，
    所述第一绝缘层包括SiNx及SiO2。
  8. 如权利要求2所述的触控显示面板，其中，
    所述栅极、所述第一电极与所述第二电极同层设置。
  9. 如权利要求2所述的触控显示面板，其中，
    所述第二绝缘层与所述第一绝缘层同层设置。
  10. 如权利要求2所述的触控显示面板，其中，
    所述源漏电极层与所述连接层同层设置。
  11. 如权利要求1所述的触控显示面板，其中，
    所述第一电极在所述显示区形成第一电极图案；
    所述第二电极在所述显示区形成第二电极图案；
    所述第一电极图案横向设置，所述第二电极图案横向设置，所述第一电极图案与所述第二电极图案互不连接。
  12. 如权利要求2所述的触控显示面板，其中，
    所述源漏电极层包括源极以及漏级，所述源极以及所述漏级连接所述有源层。
  13. 如权利要求1所述的触控显示面板，其中，
    所述薄膜晶体管包括低温多晶硅薄膜晶体管或氧化物薄膜晶体管。
  14. 一种触控显示面板的制备方法，其中，包括：
    提供一基板以及LED，所述基板包括主显示区以及非显示区；
    形成第一金属层于所述基板上，所述第一金属层包括述依次间隔设置的第一电极、第二电极以及栅极，所述第一电极以及所述第二电极设于所述主显示区，所述栅极设于所述非显示区；
    形成绝缘层于所述基板上，所述绝缘层包括第一绝缘层以及第二绝缘层，所述第一绝缘层设于所述显示区且覆盖所述第一电极以及所述第二电极，所述第二绝缘层设于所述非显示区且覆盖所述栅极；
    形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔，所述通孔延伸至所述第一电极的上表面；
    形成第二金属层于所述绝缘层以及所述有源层上，所述第二金属层包括连接层以及源漏极层，所述连接层设于所述第一绝缘层上且位于所述通孔中，所述连接层将所述第一电极进行连接，所述源漏电极层设于所述有源层以及所述第二绝缘层上；
    对所述第一电极以及所述第二电极图形化形成第一电极图案以及第二电极图案；
    将所述LED打件及设于所述绝缘层上，所述LED对应所述第一电极以及所述第二电极。
  15. 如权利要求14所述的触控显示面板的制备方法，其中，
    在所述形成有源层于所述第二绝缘层上，并在所述第一绝缘层对应所述第一电极处开设通孔的步骤中，包括：
    沉积一层有源材料于所述绝缘层上；
    光刻所述有源材料图案化形成通孔图案以及所述有源层；
    在所述通孔图案的区域对所述第一绝缘层开设所述通孔，所述通孔延伸至所述第一电极的上表面。
PCT/CN2020/113480 2020-08-11 2020-09-04 触控显示面板及其制备方法 WO2022032765A1 (zh)

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