WO2020210939A1 - 触控显示基板及其制作方法、显示装置 - Google Patents

触控显示基板及其制作方法、显示装置 Download PDF

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Publication number
WO2020210939A1
WO2020210939A1 PCT/CN2019/082655 CN2019082655W WO2020210939A1 WO 2020210939 A1 WO2020210939 A1 WO 2020210939A1 CN 2019082655 W CN2019082655 W CN 2019082655W WO 2020210939 A1 WO2020210939 A1 WO 2020210939A1
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WIPO (PCT)
Prior art keywords
touch
electrode
insulating layer
signal line
inorganic insulating
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PCT/CN2019/082655
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English (en)
French (fr)
Inventor
武新国
王凤国
郭志轩
刘弘
马波
李凯
田亮
宋室成
Original Assignee
京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Application filed by 京东方科技集团股份有限公司, 鄂尔多斯市源盛光电有限责任公司 filed Critical 京东方科技集团股份有限公司
Priority to PCT/CN2019/082655 priority Critical patent/WO2020210939A1/zh
Priority to US16/763,105 priority patent/US20200348784A1/en
Priority to CN201980000498.2A priority patent/CN112352316A/zh
Publication of WO2020210939A1 publication Critical patent/WO2020210939A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G06F3/04164—Connections between sensors and controllers, e.g. routing lines between electrodes and connection pads
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes

Definitions

  • the present disclosure relates to the field of display technology, in particular to a touch display substrate, a manufacturing method thereof, and a display device.
  • the common electrodes of the touch display substrate are multiplexed as touch electrodes, and the common electrode lines of the touch display substrate are multiplexed as touch signal lines.
  • An organic resin layer is spaced between the control electrodes, and the touch signal line is connected to the touch electrode through a via hole penetrating the organic resin layer to realize the touch function.
  • the touch electrode is located at the bottom of the via hole and overlaps with the touch signal line. Because the thickness of the organic resin layer is generally relatively large, it leads to the overlap resistance between the touch electrode and the touch signal at the via hole. It is relatively large.
  • organic resins are prone to produce volatile matter under high temperature or plasma environment. The volatile matter will also be connected to the electrical connection at the via hole. This will cause a common voltage on the touch electrode when the touch display substrate is displayed. Uneven signal loading and abnormal common voltage signal affect the uniformity of the display.
  • the embodiments of the present disclosure provide a touch display substrate, a manufacturing method thereof, and a display device.
  • a touch display substrate in one aspect, includes a common electrode and a common electrode line connected to the common electrode, and further includes a touch electrode and a touch signal line connected to the touch electrode, so The common electrode of the touch display substrate is multiplexed as the touch electrode, the common electrode line of the touch display substrate is multiplexed as the touch signal line, and the method further includes: The inorganic insulating layer between the control signal lines, the touch electrode is electrically connected to the touch signal line through the via hole penetrating the inorganic insulating layer, the touch electrode, the inorganic insulating layer and the touch The control signal lines are stacked in sequence.
  • the touch display substrate includes a plurality of touch signal lines
  • the touch electrode includes a plurality of sub-touch electrodes independent of each other
  • the touch signal line and the sub-touch electrode are one by one
  • each of the sub touch electrodes is connected to the corresponding touch signal line.
  • the thickness of the inorganic insulating layer is not greater than 1000 nanometers.
  • the inorganic insulating layer is located on a side of the touch electrode away from the base substrate of the touch display substrate, and the touch signal line is located on a side of the inorganic insulating layer away from the touch electrode. side.
  • the touch display substrate specifically includes:
  • a thin film transistor array located on the base substrate
  • the touch electrode located on the flat layer
  • the pixel electrode of the touch display substrate and the touch signal line located on the inorganic insulating layer passes through a via hole penetrating the flat layer and the inorganic insulating layer and the drain of the thin film transistor Connected, the touch signal line is connected to the touch electrode through a via hole penetrating the inorganic insulating layer.
  • the touch display substrate further includes:
  • a conductive protection pattern located in the via hole and in direct contact with the touch electrode, the touch signal line is in direct contact with the conductive protection pattern, and is electrically connected to the touch electrode through the conductive protection pattern,
  • the conductive protection pattern and the pixel electrode are formed through the same patterning process.
  • the embodiment of the present disclosure also provides a display device, including the touch display substrate as described above.
  • the embodiment of the present disclosure also provides a method for manufacturing a touch display substrate.
  • the touch display substrate includes a common electrode and a common electrode line connected to the common electrode, and also includes a touch electrode and a touch electrode connected to the touch electrode.
  • the common electrodes are multiplexed as the touch electrodes, and the common electrode lines are multiplexed as the touch signal lines.
  • the manufacturing method includes:
  • the other one of the touch electrode and the touch signal line is formed, and the touch electrode is electrically connected to the touch signal line through a via hole penetrating the inorganic insulating layer.
  • the thickness of the inorganic insulating layer is not greater than 1000 nanometers.
  • the manufacturing method specifically includes:
  • a touch signal line is formed on the inorganic insulating layer, and the touch signal line is connected to the touch electrode through the via hole.
  • the manufacturing method further includes:
  • the formation of the touch electrode specifically includes:
  • the manufacturing method further includes:
  • a pixel electrode of the touch display substrate is formed on the inorganic insulating layer, and the pixel electrode is connected to the drain of the thin film transistor through a via hole penetrating the flat layer and the inorganic insulating layer.
  • the manufacturing method further includes:
  • Forming the touch signal line includes:
  • the touch signal line is formed on the inorganic insulating layer on which the pixel electrode and the conductive protection pattern are formed, and the touch signal line is in direct contact with the conductive protection pattern.
  • the touch electrodes are electrically connected.
  • FIG. 1 is a schematic diagram of the structure of a conventional touch display substrate
  • FIG. 2 is a schematic diagram of the distance between the touch electrode and the pixel electrode in the conventional touch display substrate
  • FIG. 3 is a schematic diagram of the connection between touch electrodes and touch signal lines in an embodiment of the disclosure.
  • FIG. 4 is a schematic plan view of a touch display substrate according to an embodiment of the disclosure.
  • FIG. 5 is a schematic cross-sectional view of a touch display substrate according to an embodiment of the disclosure.
  • the existing touch display substrate sequentially includes: a base substrate 1, a light shielding layer 2 located on the base substrate 1, and a light shielding layer 2
  • the organic resin layer 8 is the touch electrode 9 located on the organic resin layer 8.
  • the touch electrode 9 is connected to the touch signal line 12 through the through hole penetrating the organic resin layer 8; the passivation layer 10 covering the touch electrode 9,
  • the pixel electrode 11 is located on the passivation layer 10.
  • the pixel electrode 11 is connected to the drain of the thin film transistor through a via hole penetrating the passivation layer 10, the organic resin layer 8 and the planarization layer 7.
  • the touch electrode 9 It is also multiplexed as a common electrode, the touch signal line 12 is also multiplexed as a common electrode line, where the touch electrode 9 is multiplexed as a common electrode, that is, the touch electrode 9 is also used as a common electrode, and the touch signal line 12 is multiplexed as The common electrode line, that is, the touch signal line 12 is also used as a common electrode line.
  • the touch signal line 12 is arranged between the touch electrode 9 and the base substrate 1. Since the touch electrode 9 needs to be formed on a flat surface, The organic resin layer 8 needs to be provided on the touch signal line 12 to provide a flat surface for the subsequent formation of the touch electrode 9. In addition, in order to insulate the pixel electrode 11 from the touch electrode 9, it is also necessary to provide a covering touch electrode 9 ⁇ Passivation layer 10.
  • the touch electrode 9 is located at the bottom of the through hole and overlaps the touch signal line 12. Since the thickness of the organic resin layer 8 is generally relatively large, for example, the thickness is 1.5 um ⁇ 3.0um, resulting in a relatively large overlap resistance between the touch electrode 9 and the touch signal line 12 at the via hole, so that the common voltage signal on the touch electrode 9 will be caused when the touch display substrate performs display Uneven loading and abnormal common voltage signal affect the uniformity of the display.
  • the pixel electrode 11 is located on the side of the touch electrode 9 away from the touch signal line 12.
  • the distance between the touch electrode 9 and the pixel electrode 11 is D1 is much larger than the distance D2 between the touch electrode 9 and the pixel electrode 11 in other areas, so when the touch display substrate performs display, the driving electric field formed between the touch electrode 9 and the pixel electrode 11 at the via hole is weak.
  • the liquid crystal control ability is insufficient, and the color display is prone to be abnormal, and the macroscopic appearance is oblique Mura (bright spot).
  • the embodiments of the present disclosure provide a touch display substrate, a manufacturing method thereof, and a display device, which can improve the display effect of the touch display substrate.
  • An embodiment of the present disclosure provides a touch display substrate, the touch display substrate includes a common electrode and a common electrode line connected to the common electrode, and also includes a touch electrode and a touch signal line connected to the touch electrode ,
  • the common electrode is multiplexed as the touch electrode
  • the common electrode line is multiplexed as the touch signal line, further comprising: inorganic insulation between the touch electrode and the touch signal line Layer, the touch electrode is electrically connected to the touch signal line through a via hole penetrating the inorganic insulating layer, and the touch electrode, the inorganic insulating layer and the touch signal line are stacked in sequence.
  • the common electrode is multiplexed as touch electrodes, that is, the common electrodes are used as touch electrodes at the same time, and the common electrode lines are multiplexed as touch signal lines, that is, the common electrode lines are used as touch signal lines at the same time.
  • the touch electrode is electrically connected to the touch signal line through a via hole penetrating the inorganic insulating layer.
  • the thickness of the inorganic insulating layer is smaller.
  • the lap resistance between the wires is relatively small, and the inorganic insulating layer will not produce volatile matter under high temperature or plasma environment to affect the electrical connection at the via hole, which can improve the touch control when the touch display substrate performs display.
  • the uniformity of the common voltage signal loaded on the electrode improves the display effect of the touch display substrate; and when the touch display substrate performs touch detection, the uniformity of the touch signal loaded on the touch electrode can also be improved to ensure the touch Control the touch effect of the display substrate.
  • the thickness of the inorganic insulating layer is relatively small, the distance between the touch electrode and the pixel electrode at the through hole of the inorganic insulating layer is not much different from the distance between the touch electrode and the pixel electrode in other regions, so When the touch display substrate performs display, it can ensure the strength of the driving electric field formed between the touch electrode and the pixel electrode at the via hole, ensure the liquid crystal control ability, avoid color display abnormalities, and solve the oblique mura problem.
  • the thickness of the inorganic insulating layer is not greater than 1000 nanometers, and can be tens of nanometers or hundreds of nanometers, so that the overlap resistance between the touch electrode and the touch signal line at the through hole of the inorganic insulating layer is relatively small
  • the uniformity of the common voltage signal loaded on the touch electrode can be improved, and the display effect of the touch display substrate can be improved; and when the touch display substrate performs touch detection, the touch The uniformity of the touch signal loaded on the control electrode ensures the touch effect of the touch display substrate. If the thickness of the inorganic insulating layer is too small, it will affect the insulation between the touch electrode and the touch signal line.
  • the thickness of the inorganic insulating layer is too large, it will cause the touch electrode and the touch signal at the through hole of the inorganic insulating layer.
  • the overlap resistance between the wires is relatively large.
  • the thickness of the inorganic insulating layer may be 50-500 nanometers.
  • the thickness of the inorganic insulating layer is not limited to be less than 1000 nanometers. If the thickness of the inorganic insulating layer is equal to 1000 nanometers, or slightly greater than 1000 nanometers, as long as the thickness is smaller than the existing organic resin layer, Both can improve the overlap resistance between the touch electrode and the touch signal line at the via hole, and thus can improve the uniformity of the common voltage signal loaded on the touch electrode when the touch display substrate performs display.
  • the touch display substrate includes a plurality of touch signal lines
  • the touch electrodes include a plurality of sub-touch electrodes independent of each other
  • the touch signal lines correspond to the sub-touch electrodes one-to-one
  • Each of the sub touch electrodes is connected to the corresponding touch signal line.
  • the inorganic insulating layer may be located on a side of the touch electrode away from the base substrate of the touch display substrate, and the touch signal line may be located on a side of the inorganic insulating layer away from the touch electrode.
  • the inorganic insulating layer is not limited to be located on the side of the touch electrode away from the base substrate of the touch display substrate, and may also be located on the side of the touch electrode close to the base substrate, and the touch signal line is located on the inorganic The insulating layer is close to the side of the base substrate.
  • the arrangement sequence of the inorganic insulating layer, the touch electrode, and the touch signal line is: touch electrode, inorganic insulating layer, touch Signal line.
  • touch electrodes need to be formed on a flat surface, a flat layer covering the thin film transistor array is provided on the touch display substrate. According to the above arrangement sequence, the touch electrodes can be formed on the touch display substrate. On the flat layer.
  • touch electrode and touch signal line is: touch signal line, inorganic insulating layer, touch electrode, then the touch signal line is formed on the flat layer, and then the inorganic insulating layer is formed , And the touch electrode is formed on the inorganic insulating layer. Due to the small thickness of the inorganic insulating layer, the flatness requirement of the touch electrode may not be met.
  • the touch display substrate specifically includes:
  • a thin film transistor array located on the base substrate
  • the touch electrode located on the flat layer
  • the pixel electrode of the touch display substrate and the touch signal line located on the inorganic insulating layer passes through a via hole penetrating the flat layer and the inorganic insulating layer and the drain of the thin film transistor Connected, the touch signal line is connected to the touch electrode through a via hole penetrating the inorganic insulating layer.
  • the positions of the pixel electrode and the touch signal line do not conflict, that is, the orthographic projection of the pixel electrode on the base substrate and the touch
  • the orthographic projection of the control signal line on the base substrate does not overlap, so that the pixel electrode and the touch signal line can be insulated without layering the pixel electrode and the touch signal line.
  • the pixel electrode and the touch signal line can be They are all arranged on the inorganic insulating layer, so that the inorganic insulating layer can isolate the pixel electrode and the touch electrode, as well as the touch electrode and the touch signal line, eliminating the need for an insulating film layer that separates the pixel electrode and the touch signal line. It can simplify the structure of the touch display substrate, reduce the number of patterning processes for manufacturing the touch display substrate, and reduce the manufacturing cost of the touch display substrate.
  • the touch display substrate further includes:
  • a conductive protection pattern located in the via hole and in direct contact with the touch electrode, the touch signal line is in direct contact with the conductive protection pattern, and is electrically connected to the touch electrode through the conductive protection pattern,
  • the conductive protection pattern and the pixel electrode are formed through the same patterning process.
  • the pixel electrode is formed before forming the touch signal line, when the pixel electrode is etched, the etching solution of the pixel electrode is likely to damage the touch electrode exposed at the via hole.
  • the pixel electrode is formed At the same time, the material of the pixel electrode is used to form a conductive protection pattern that directly contacts the touch electrode at the via hole.
  • the conductive protection pattern can protect the touch electrode exposed at the via hole so that the etching solution forming the pixel electrode will not Contact with the touch electrode to avoid damage to the touch electrode exposed at the via hole, and to ensure the electrical connection state of the touch signal line and the touch electrode.
  • the embodiment of the present disclosure also provides a display device, including the touch display substrate as described above.
  • the display device may be any product or component with a display function such as LCD TV, LCD, digital photo frame, mobile phone, tablet computer, etc., wherein the display device also includes flexible circuit board, printed circuit board, backplane, radio frequency Unit, network module, audio output unit, input unit, sensor, display unit, user input unit, interface unit, memory, processor, power supply and other components.
  • the structure of the above display device does not constitute a limitation on the display device, and the display device may include more or less of the above components, or combine some components, or arrange different components.
  • the embodiment of the present disclosure also provides a method for manufacturing a touch display substrate.
  • the touch display substrate includes a common electrode and a common electrode line connected to the common electrode, and also includes a touch electrode and a touch electrode connected to the touch electrode.
  • the common electrodes are multiplexed as the touch electrodes, and the common electrode lines are multiplexed as the touch signal lines.
  • the manufacturing method includes:
  • the other one of the touch electrode and the touch signal line is formed, and the touch electrode is electrically connected to the touch signal line through a via hole penetrating the inorganic insulating layer.
  • the common electrode is multiplexed as touch electrodes, that is, the common electrodes are used as touch electrodes at the same time, and the common electrode lines are multiplexed as touch signal lines, that is, the common electrode lines are used as touch signal lines at the same time.
  • the touch electrode is electrically connected to the touch signal line through a via hole penetrating the inorganic insulating layer.
  • the thickness of the inorganic insulating layer is smaller.
  • the lap resistance between the wires is relatively small, and the inorganic insulating layer will not produce volatile matter under high temperature or plasma environment to affect the electrical connection at the via hole, which can improve the touch control when the touch display substrate performs display.
  • the uniformity of the common voltage signal loaded on the electrode improves the display effect of the touch display substrate; and when the touch display substrate performs touch detection, the uniformity of the touch signal loaded on the touch electrode can also be improved to ensure the touch Control the touch effect of the display substrate.
  • the manufacturing method specifically includes:
  • a touch signal line is formed on the inorganic insulating layer, and the touch signal line is connected to the touch electrode through the via hole.
  • the thickness of the inorganic insulating layer is relatively small, the distance between the touch electrode and the pixel electrode at the through hole of the inorganic insulating layer is not much different from the distance between the touch electrode and the pixel electrode in other regions, so When the touch display substrate performs display, it can ensure the strength of the driving electric field formed between the touch electrode and the pixel electrode at the via hole, ensure the liquid crystal control ability, avoid color display abnormalities, and solve the oblique mura problem.
  • the thickness of the inorganic insulating layer is not greater than 1000 nanometers, and can be tens of nanometers or hundreds of nanometers, so that the overlap resistance between the touch electrode and the touch signal line at the through hole of the inorganic insulating layer is relatively small
  • the uniformity of the common voltage signal loaded on the touch electrode can be improved, and the display effect of the touch display substrate can be improved; and when the touch display substrate performs touch detection, the touch The uniformity of the touch signal loaded on the control electrode ensures the touch effect of the touch display substrate. If the thickness of the inorganic insulating layer is too small, it will affect the insulation between the touch electrode and the touch signal line.
  • the thickness of the inorganic insulating layer is too large, it will cause the touch electrode and the touch signal at the through hole of the inorganic insulating layer.
  • the overlap resistance between the wires is relatively large.
  • the thickness of the inorganic insulating layer may be 50-500 nanometers.
  • the thickness of the inorganic insulating layer is not limited to be less than 1000 nanometers. If the thickness of the inorganic insulating layer is equal to 1000 nanometers, or slightly greater than 1000 nanometers, as long as the thickness is smaller than the existing organic resin layer, Both can improve the overlap resistance between the touch electrode and the touch signal line at the via hole, and thus can improve the uniformity of the common voltage signal loaded on the touch electrode when the touch display substrate performs display.
  • the inorganic insulating layer may be located on a side of the touch electrode away from the base substrate of the touch display substrate, and the touch signal line may be located on a side of the inorganic insulating layer away from the touch electrode.
  • the inorganic insulating layer is not limited to be located on the side of the touch electrode away from the base substrate of the touch display substrate, and may also be located on the side of the touch electrode close to the base substrate, and the touch signal line is located on the inorganic The insulating layer is close to the side of the base substrate.
  • the arrangement sequence of the inorganic insulating layer, the touch electrode, and the touch signal line is: touch electrode, inorganic insulating layer, touch Signal line.
  • touch electrodes need to be formed on a flat surface, a flat layer covering the thin film transistor array is provided on the touch display substrate. According to the above arrangement sequence, the touch electrodes can be formed on the touch display substrate. On the flat layer.
  • touch electrode and touch signal line is: touch signal line, inorganic insulating layer, touch electrode, then the touch signal line is formed on the flat layer, and then the inorganic insulating layer is formed , And the touch electrode is formed on the inorganic insulating layer. Due to the small thickness of the inorganic insulating layer, the flatness requirement of the touch electrode may not be met.
  • the manufacturing method further includes:
  • the formation of the touch electrode specifically includes:
  • the manufacturing method further includes:
  • a pixel electrode of the touch display substrate is formed on the inorganic insulating layer, and the pixel electrode is connected to the drain of the thin film transistor through a via hole penetrating the flat layer and the inorganic insulating layer.
  • the positions of the pixel electrode and the touch signal line do not conflict, that is, the orthographic projection of the pixel electrode on the base substrate and the touch
  • the orthographic projection of the control signal line on the base substrate does not overlap, so that the pixel electrode and the touch signal line can be insulated without layering the pixel electrode and the touch signal line.
  • the pixel electrode and the touch signal line can be They are all arranged on the inorganic insulating layer, so that the inorganic insulating layer can isolate the pixel electrode and the touch electrode, as well as the touch electrode and the touch signal line, eliminating the need for an insulating film layer that separates the pixel electrode and the touch signal line. It can simplify the structure of the touch display substrate, reduce the number of patterning processes for manufacturing the touch display substrate, and reduce the manufacturing cost of the touch display substrate.
  • the manufacturing method further includes:
  • Forming the touch signal line includes:
  • the touch signal line is formed on the inorganic insulating layer on which the pixel electrode and the conductive protection pattern are formed, and the touch signal line is in direct contact with the conductive protection pattern.
  • the touch electrodes are electrically connected.
  • the pixel electrode is formed before forming the touch signal line, when the pixel electrode is etched, the etching solution of the pixel electrode is likely to damage the touch electrode exposed at the via hole.
  • the pixel electrode is formed At the same time, the material of the pixel electrode is used to form a conductive protection pattern that directly contacts the touch electrode at the via hole.
  • the conductive protection pattern can protect the touch electrode exposed at the via hole so that the etching solution forming the pixel electrode will not Contact with the touch electrode to avoid damage to the touch electrode exposed at the via hole, and to ensure the electrical connection state of the touch signal line and the touch electrode.
  • the manufacturing method of the touch display substrate of this embodiment includes the following steps:
  • Step 1 Provide a base substrate 1 and form a light-shielding layer 2 on the base substrate 1;
  • the base substrate 1 may be a glass substrate or a quartz substrate.
  • the light shielding layer 2 can be made of opaque metal or light shielding insulating material to shield the active layer of the thin film transistor.
  • the orthographic projection of the active layer of the thin film transistor on the base substrate 1 falls into the light shielding layer 2 on the base substrate.
  • the light shielding layer 2 can prevent the light emitted by the backlight module from irradiating the active layer of the thin film transistor, which affects the performance of the thin film transistor.
  • Step 2 Form a buffer layer 3;
  • the buffer layer 3 can be made of inorganic insulating materials, and the inorganic insulating materials can be oxides, nitrides or oxynitride compounds.
  • the buffer layer 3 can prevent the metal ions in the base substrate 1 from moving into the thin film transistors and affect the performance of the thin film transistors.
  • Step 3 Form the active layer 4;
  • a layer of semiconductor material can be deposited on the buffer layer 3, the semiconductor material can be a-Si, a layer of photoresist is coated on the semiconductor material, and a mask is used to expose the photoresist to make the photoresist Forming a photoresist unreserved area and a photoresist fully reserved area, wherein the photoresist fully reserved area corresponds to the area where the pattern of the active layer is located, and the unreserved photoresist area corresponds to the area outside the pattern of the active layer; After the development process, the photoresist in the unreserved area of the photoresist is completely removed, the thickness of the photoresist in the completely reserved area of the photoresist remains unchanged, and the semiconductor material in the unreserved area of the photoresist is completely etched by the etching process , Forming the pattern of the active layer 4, which serves as the active layer of the thin film transistor switch in the pixel area and the GOA area.
  • Step 4 Form a gate insulating layer 5;
  • a plasma-enhanced chemical vapor deposition (PECVD) method can be used to deposit a thickness of
  • the gate insulating layer 5 can be selected from oxides, nitrides or oxynitride compounds, and the corresponding reaction gas is SiH 4 , NH 3 , N 2 or SiH 2 Cl 2 , NH 3 , N 2 .
  • Step 5 Form a gate metal layer pattern 15;
  • the gate metal layer can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and other metals and alloys of these metals.
  • the gate metal layer can be a single layer structure or multiple layers Structure, multilayer structure such as Cu ⁇ Mo, Ti ⁇ Cu ⁇ Ti, Mo ⁇ Al ⁇ Mo, etc.
  • the photoresist Coat a layer of photoresist on the gate metal layer, and use a mask to expose the photoresist so that the photoresist forms a photoresist unreserved area and a photoresist reserved area, where the photoresist reserved area corresponds to In the area where the gate metal layer pattern 15 is located, the unreserved area of the photoresist corresponds to the area other than the above pattern; the development process is performed, the photoresist in the unreserved area of the photoresist is completely removed, and the photoresist in the remaining area of the photoresist The thickness remains unchanged; the gate metal film in the unreserved area of the photoresist is completely etched by an etching process, and the remaining photoresist is stripped to form a gate metal layer pattern 15, which includes a gate line and a gate electrode, It can control the conduction of thin film transistors.
  • Step 6 Form an interlayer insulating layer 6;
  • the interlayer insulating layer 6 can be selected from oxides, nitrides or oxynitride compounds, and the corresponding reaction gases are SiH 4 , NH 3 , N 2 or SiH 2 Cl 2 , NH 3 , N 2 .
  • the interlayer insulating layer 6 is used to achieve insulation between the gate metal pattern 15 and the source/drain metal layer 13.
  • Step 7 Form source and drain metal layer patterns 13;
  • the source and drain metal layers can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and other metals and alloys of these metals.
  • the source/drain metal layer may be a single-layer structure or a multilayer structure, such as Cu ⁇ Mo, Ti ⁇ Cu ⁇ Ti, Mo ⁇ Al ⁇ Mo, etc.
  • the unreserved photoresist area corresponds to the area other than the above pattern; the development process is performed, the photoresist in the unreserved photoresist area is completely removed, and the photoresist in the remaining area is completely removed.
  • the thickness of the resist remains unchanged; the source and drain metal layers in the unreserved areas of the photoresist are completely etched by the etching process, and the remaining photoresist is stripped to form a source and drain metal layer pattern 13, which includes leakage Electrode, source electrode and data line.
  • Step 8 Form a flat layer 7;
  • a layer of organic resin can be coated on the base substrate 1 after step 7 as the flat layer 7, and the flat layer formed by the organic resin has better flatness.
  • Step 9 Form touch electrodes 9;
  • the deposition thickness on the flat layer 7 by sputtering or thermal evaporation is about
  • the transparent conductive layer can be ITO, IZO or other transparent metal oxides
  • a layer of photoresist is coated on the transparent conductive layer, and the photoresist is exposed with a mask to form the photoresist
  • the photoresist unreserved area and the photoresist reserved area where the photoresist reserved area corresponds to the area where the touch electrode 9 is located, and the photoresist unreserved area corresponds to the area outside the above pattern; the development process is performed, and the photoresist The photoresist in the unreserved area is completely removed, and the thickness of the photoresist in the reserved area of the photoresist remains unchanged; the transparent conductive layer film in the unreserved area of the photoresist is completely etched by the etching process, and the remaining photoresist is stripped Glue is used to form touch electrodes 9, which are
  • Step 10 Form a passivation layer 10
  • the passivation layer can be selected from oxides, nitrides or oxynitride compounds.
  • the passivation layer material can be SiNx, SiOx or Si(ON)x, and the passivation layer can also be Al 2 O 3 .
  • the passivation layer can be a single-layer structure or a two-layer structure composed of silicon nitride and silicon oxide.
  • the reaction gas corresponding to the silicon oxide may be SiH 4 , N 2 O; the corresponding gas of the nitride or oxygen nitrogen compound may be SiH 4 , NH 3 , N 2 or SiH 2 Cl 2 , NH 3 , N 2 .
  • the passivation layer 10 and the flat layer 7 are patterned to form pixel electrode via holes exposing the drain electrode and touch electrode via holes exposing the touch electrode.
  • Step 11 Form the pixel electrode 11 and the conductive protection pattern 16;
  • the deposition thickness on the base substrate 1 after step 10 is about
  • the transparent conductive layer the transparent conductive layer can be ITO, IZO or other transparent metal oxides
  • a layer of photoresist is coated on the transparent conductive layer, and the photoresist is exposed by a mask to form the photoresist
  • the photoresist unreserved area and the photoresist reserved area wherein the photoresist reserved area corresponds to the area where the pattern of the pixel electrode 11 and the conductive protection pattern 16 are located, and the photoresist unreserved area corresponds to the area other than the aforementioned pattern;
  • the photoresist in the unreserved area of the photoresist is completely removed, and the thickness of the photoresist in the reserved area of the photoresist remains unchanged;
  • the transparent conductive layer film in the unreserved area of the photoresist is completely etched by the etching process , Peeling off the remaining photoresist to form patterns of the
  • Step 12 forming a touch signal line 12.
  • the metal layer can be Cu, Al, Ag, Mo, Cr, Nd, Ni, Mn, Ti, Ta, W and other metals and alloys of these metals.
  • the metal layer can be a single-layer structure or a multilayer structure, such as Cu ⁇ Mo, Ti ⁇ Cu ⁇ Ti, Mo ⁇ Al ⁇ Mo, etc.
  • the unreserved photoresist area corresponds to the area other than the above-mentioned pattern; the development process is performed, the photoresist in the unreserved photoresist area is completely removed, and the photoresist remaining area is photoetched The thickness of the glue remains unchanged; the metal layer in the unreserved area of the photoresist is completely etched by the etching process, and the remaining photoresist is stripped to form the touch signal line 12, which is connected to the touch signal line through the conductive protection pattern 16
  • the control electrode 9 is electrically connected.
  • each touch signal line 12 is connected to one sub touch electrode, and each touch signal line 12 can be connected to one sub touch electrode through a plurality of touch electrode vias 14.
  • the touch display substrate of this embodiment sequentially includes: a base substrate 1, a light shielding layer 2 on the base substrate 1, and The buffer layer 3 located on the light shielding layer 2, the active layer 4 located on the buffer layer 3, the gate insulating layer 5, the interlayer insulating layer 6, the flat layer 7, the touch electrode 9 located on the flat layer 7, covering the touch
  • the passivation layer 10 of the electrode 9 that is, the above-mentioned inorganic insulating layer
  • the pixel electrode 11 and the conductive protection pattern 16 on the passivation layer 10
  • the touch electrode is electrically connected to the touch signal line through the via hole penetrating the passivation layer.
  • the thickness of the passivation layer is relatively small, generally less than 1 micron, ranging from tens of nanometers to hundreds of nanometers.
  • the uniformity of the common voltage signal loaded on the touch electrode can be improved, and the display effect of the touch display substrate can be improved; and when the touch display substrate performs touch detection, it can also improve The uniformity of the touch signal loaded on the touch electrode ensures the touch effect of the touch display substrate.
  • the thickness of the passivation layer is relatively small, the distance between the touch electrode and the pixel electrode at the via hole of the passivation layer is not much different from the distance between the touch electrode and the pixel electrode in other regions, so that When the touch display substrate performs display, it can ensure the strength of the driving electric field formed between the touch electrode and the pixel electrode at the via hole, ensure the liquid crystal control ability, avoid color display abnormalities, and solve the oblique mura problem.

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Abstract

一种触控显示基板及其制作方法、显示装置，属于显示技术领域。其中，触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极（9）和与所述触控电极（9）连接的触控信号线（12），所述触控显示基板的公共电极复用为触控电极（9），所述触控显示基板的公共电极线复用为触控信号线（12），所述触控显示基板还包括：位于所述触控电极（9）和所述触控信号线（12）之间的无机绝缘层（10），所述触控电极（9）通过贯穿所述无机绝缘层（10）的过孔与所述触控信号线（12）电连接，所述触控电极（9）、所述无机绝缘层（10）和所述触控信号线（12）依次层叠设置，能够改善触控显示基板的显示效果。

Description

触控显示基板及其制作方法、显示装置 技术领域
本公开涉及显示技术领域，特别是指一种触控显示基板及其制作方法、显示装置。
背景技术
现有触控显示基板中，为了简化结构，触控显示基板的公共电极复用为触控电极，触控显示基板的公共电极线复用为触控信号线，其中，触控信号线与触控电极之间间隔有机树脂层，触控信号线通过贯穿有机树脂层的过孔与触控电极连接，实现触控功能。在过孔处，触控电极位于过孔的底部与触控信号线搭接，由于有机树脂层的厚度一般都比较大，导致在过孔处触控电极与触控信号之间的搭接电阻比较大，另外有机树脂在高温或等离子环境下，易产生挥发物，挥发物也会应该过孔处的电连接状况，这样在触控显示基板进行显示时，会导致触控电极上的公共电压信号加载不均，公共电压信号异常，影响显示的均一性。
发明内容
本公开实施例提供了一种触控显示基板及其制作方法、显示装置。
本公开的实施例提供技术方案如下：
一方面，提供一种触控显示基板，所述触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极和与所述触控电极连接的触控信号线，所述触控显示基板的公共电极复用为所述触控电极，所述触控显示基板的公共电极线复用为所述触控信号线，还包括：位于所述触控电极和所述触控信号线之间的无机绝缘层，所述触控电极通过贯穿所述无机绝缘层的过孔与所述触控信号线电连接，所述触控电极、所述无机绝缘层和所述触控信号线依次层叠设置。
可选地，所述触控显示基板包括有多条触控信号线，所述触控电极包括多个相互独立的子触控电极，所述触控信号线与所述子触控电极一一对应， 每一所述子触控电极与对应的所述触控信号线连接。
可选地，所述无机绝缘层的厚度不大于1000纳米。
可选地，所述无机绝缘层位于所述触控电极远离所述触控显示基板的衬底基板的一侧，所述触控信号线位于所述无机绝缘层远离所述触控电极的一侧。
可选地，所述触控显示基板具体包括：
衬底基板；
位于所述衬底基板上的薄膜晶体管阵列；
覆盖所述薄膜晶体管阵列的平坦层；
位于所述平坦层上的所述触控电极；
覆盖所述触控电极的无机绝缘层；
位于所述无机绝缘层上的所述触控显示基板的像素电极和所述触控信号线，所述像素电极通过贯穿所述平坦层和所述无机绝缘层的过孔与薄膜晶体管的漏极连接，所述触控信号线通过贯穿所述无机绝缘层的过孔与所述触控电极连接。
可选地，所述触控显示基板还包括：
位于所述过孔内、与所述触控电极直接接触的导电保护图形，所述触控信号线与所述导电保护图形直接接触，通过所述导电保护图形与所述触控电极电连接，所述导电保护图形与所述像素电极通过同一次构图工艺形成。
本公开实施例还提供了一种显示装置，包括如上所述的触控显示基板。
本公开实施例还提供了一种触控显示基板的制作方法，所述触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极和与所述触控电极连接的触控信号线，所述公共电极复用为所述触控电极，所述公共电极线复用为所述触控信号线，所述制作方法包括：
形成所述触控电极和所述触控信号线中的任一者；
形成无机绝缘层，对所述无机绝缘层进行构图形成过孔；
形成所述触控电极和所述触控信号线中的另一者，所述触控电极通过贯穿所述无机绝缘层的过孔与所述触控信号线电连接。
可选地，所述无机绝缘层的厚度不大于1000纳米。
可选地，所述制作方法具体包括：
形成所述触控电极；
形成覆盖所述触控电极的无机绝缘层，对所述无机绝缘层进行构图，形成暴露出所述触控电极的所述过孔；
在所述无机绝缘层上形成触控信号线，所述触控信号线通过所述过孔与所述触控电极连接。
可选地，形成所述触控电极之前，所述制作方法还包括：
提供一衬底基板，在所述衬底基板上形成薄膜晶体管阵列；
形成覆盖所述薄膜晶体管阵列的平坦层；
形成所述触控电极具体为：
在所述平坦层上形成所述触控电极；
形成所述无机绝缘层之后，在所述无机绝缘层上形成触控信号线之前，所述制作方法还包括：
在所述无机绝缘层上形成所述触控显示基板的像素电极，所述像素电极通过贯穿所述平坦层和所述无机绝缘层的过孔与薄膜晶体管的漏极连接。
可选地，在形成所述像素电极的同一次构图工艺中，所述制作方法还包括：
形成位于所述过孔内、与所述触控电极直接接触的导电保护图形；
形成所述触控信号线包括：
在形成有所述像素电极和所述导电保护图形的无机绝缘层上形成所述触控信号线，所述触控信号线与所述导电保护图形直接接触，通过所述导电保护图形与所述触控电极电连接。
附图说明
图1为现有触控显示基板的结构示意图；
图2为现有触控显示基板中，触控电极与像素电极之间的距离示意图；
图3为本公开实施例触控电极与触控信号线连接的示意图；
图4为本公开实施例触控显示基板的平面示意图；
图5为本公开实施例触控显示基板的截面示意图。
附图标记
1 衬底基板
2 遮光层
3 缓冲层
4 有源层
5 栅绝缘层
6 层间绝缘层
7 平坦层
8 有机树脂层
9 触控电极
10 钝化层
11 像素电极
12 触控信号线
13 源漏金属层图形
14 触控电极过孔
15 栅金属层图形
16 导电保护图形
具体实施方式
为使本公开的实施例要解决的技术问题、技术方案和优点更加清楚，下面将结合附图及具体实施例进行详细描述。
现有技术中，为了在液晶显示面板的基础上实现内嵌式的触控面板，需要在液晶显示面板的阵列基板的基础上增加新的膜层，利用多次构图工艺来制作触控显示基板，图1为现有触控显示基板的结构示意图，如图1所示，现有的触控显示基板依次包括：衬底基板1，位于衬底基板1上的遮光层2，位于遮光层2上的缓冲层3，位于缓冲层3上的有源层4，栅绝缘层5，层间绝缘层6，平坦层7，位于平坦层7上的触控信号线12，覆盖触控信号线12的有机树脂层8，位于有机树脂层8上的触控电极9，触控电极9通过贯穿有机树脂层8的过孔与触控信号线12连接；覆盖触控电极9的钝化层10，位 于钝化层10上的像素电极11，像素电极11通过贯穿钝化层10、有机树脂层8和平坦层7的过孔与薄膜晶体管的漏极连接，其中，为了简化结构，触控电极9还复用为公共电极，触控信号线12还复用为公共电极线，其中，触控电极9复用为公共电极即触控电极9还作为公共电极使用，触控信号线12复用为公共电极线即触控信号线12还作为公共电极线使用。
由图1可以看出，现有的触控显示基板中，将触控信号线12设置在触控电极9和衬底基板1之间，由于触控电极9需要形成在平坦的表面上，因此，在触控信号线12上需要设置有机树脂层8，来为后续形成触控电极9提供平坦的表面，另外，为了使像素电极11与触控电极9绝缘，还需要设置覆盖触控电极9的钝化层10。
如图2所示，在有机树脂层8的过孔处，触控电极9位于过孔的底部与触控信号线12搭接，由于有机树脂层8的厚度一般都比较大，比如厚度为1.5um～3.0um，导致在过孔处触控电极9与触控信号线12之间的搭接电阻比较大，这样在触控显示基板进行显示时，会导致触控电极9上的公共电压信号加载不均，公共电压信号异常，影响显示的均一性。
进一步地，如图2所示，像素电极11位于触控电极9远离触控信号线12的一侧，在有机树脂层8的过孔处，触控电极9与像素电极11之间的距离为D1，远远大于其他区域触控电极9与像素电极11之间的距离D2，这样在触控显示基板进行显示时，过孔处触控电极9与像素电极11之间形成的驱动电场微弱，液晶控制能力不足，易出现颜色显示异常，宏观上表现为斜向Mura(亮斑)。
本公开的实施例针对上述问题，提供一种触控显示基板及其制作方法、显示装置，能够改善触控显示基板的显示效果。
本公开的实施例提供一种触控显示基板，所述触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极和与所述触控电极连接的触控信号线，所述公共电极复用为所述触控电极，所述公共电极线复用为所述触控信号线，还包括：位于所述触控电极和所述触控信号线之间的无机绝缘层，所述触控电极通过贯穿所述无机绝缘层的过孔与所述触控信号线电连接，所述触控电极、所述无机绝缘层和所述触控信号线依次层叠设置。
其中，公共电极复用为触控电极即公共电极同时作为触控电极使用，公共电极线复用为触控信号线即公共电极线同时作为触控信号线使用。
本实施例中，触控电极通过贯穿无机绝缘层的过孔与触控信号线电连接，相比有机树脂层，无机绝缘层的厚度比较小，这样在过孔处触控电极与触控信号线之间的搭接电阻比较小，并且无机绝缘层在高温或等离子环境下也不会产生挥发物来影响过孔处的电连接状况，进而在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信号的均一性，改善触控显示基板的显示效果；并且在触控显示基板进行触控检测时，也能够提高触控电极上加载的触控信号的均一性，保证触控显示基板的触控效果。
进一步地，由于无机绝缘层的厚度比较小，在无机绝缘层的过孔处，触控电极与像素电极之间的距离与其他区域触控电极与像素电极之间的距离相差不大，这样在触控显示基板进行显示时，能够保证过孔处触控电极与像素电极之间形成的驱动电场的强度，保证液晶控制能力，避免出现颜色显示异常，解决斜向Mura问题。
可选地，所述无机绝缘层的厚度不大于1000纳米，可以为几十纳米或几百纳米，这样在无机绝缘层过孔处触控电极与触控信号线之间的搭接电阻比较小，在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信号的均一性，改善触控显示基板的显示效果；并且在触控显示基板进行触控检测时，也能够提高触控电极上加载的触控信号的均一性，保证触控显示基板的触控效果。如果无机绝缘层的厚度过小，会影响触控电极与触控信号线之间的绝缘性，如果无机绝缘层的厚度过大，会使得在无机绝缘层过孔处触控电极与触控信号线之间的搭接电阻比较大，优选地，无机绝缘层的厚度可以为50-500纳米。
当然，本公开的技术方案中，并不限定无机绝缘层的厚度必须小于1000纳米，如果无机绝缘层的厚度等于1000纳米，或者稍大于1000纳米，只要比现有的有机树脂层的厚度小，都可以改善过孔处触控电极与触控信号线之间的搭接电阻，进而在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信号的均一性。
进一步地，所述触控显示基板包括有多条触控信号线，所述触控电极包 括多个相互独立的子触控电极，所述触控信号线与所述子触控电极一一对应，每一所述子触控电极与对应的所述触控信号线连接。这样在触控显示基板进行显示时，可以通过触控信号线向对应的子触控电极加载公共电压信号，使得子触控电极与像素电极之间形成驱动液晶分子偏转的驱动电场；在触控显示基板进行显示时，可以通过触控信号线向对应的子触控电极加载触控信号，并根据触控信号线检测得到的电信号实现触摸位置的定位。
所述无机绝缘层可以位于所述触控电极远离所述触控显示基板的衬底基板的一侧，所述触控信号线位于所述无机绝缘层远离所述触控电极的一侧。当然，无机绝缘层并不局限于位于所述触控电极远离所述触控显示基板的衬底基板的一侧，还可以位于触控电极靠近衬底基板的一侧，触控信号线位于无机绝缘层靠近衬底基板的一侧。
优选地，从靠近触控显示基板的衬底基板到远离衬底基板的方向上，无机绝缘层、触控电极以及触控信号线的排布顺序为：触控电极、无机绝缘层、触控信号线。因为触控电极需要形成在平坦度较高的平面上，在触控显示基板上设置有覆盖薄膜晶体管阵列的平坦层，按照上述排布顺序的话，可以将触控电极形成在触控显示基板的平坦层上。如果无机绝缘层、触控电极以及触控信号线的排布顺序为：触控信号线、无机绝缘层、触控电极，则是将触控信号线形成在平坦层上，之后形成无机绝缘层，并将触控电极形成在无机绝缘层上，由于无机绝缘层的厚度较小，可能不能满足触控电极对平坦度的要求。
一具体实施例中，所述触控显示基板具体包括：
衬底基板；
位于所述衬底基板上的薄膜晶体管阵列；
覆盖所述薄膜晶体管阵列的平坦层；
位于所述平坦层上的所述触控电极；
覆盖所述触控电极的无机绝缘层；
位于所述无机绝缘层上的所述触控显示基板的像素电极和所述触控信号线，所述像素电极通过贯穿所述平坦层和所述无机绝缘层的过孔与薄膜晶体管的漏极连接，所述触控信号线通过贯穿所述无机绝缘层的过孔与所述触控 电极连接。
由于像素电极的位置在像素区域，触控信号线的位置位于相邻像素区域之间，因此，像素电极与触控信号线的位置不冲突，即像素电极在衬底基板上的正投影与触控信号线在衬底基板上的正投影不重合，这样无需将像素电极和触控信号线分层设置也可以实现像素电极与触控信号线之间的绝缘，像素电极和触控信号线可以都设置在无机绝缘层上，这样无机绝缘层既可以隔离像素电极和触控电极，还可以隔离触控电极和触控信号线，省去了隔离像素电极和触控信号线的绝缘膜层，能够简化触控显示基板的结构，减少制作触控显示基板的构图工艺的次数，降低触控显示基板的制作成本。
可选地，所述触控显示基板还包括：
位于所述过孔内、与所述触控电极直接接触的导电保护图形，所述触控信号线与所述导电保护图形直接接触，通过所述导电保护图形与所述触控电极电连接，所述导电保护图形与所述像素电极通过同一次构图工艺形成。
如果在形成触控信号线之前形成像素电极，则在对像素电极进行刻蚀时，像素电极的刻蚀液容易损害过孔处暴露出的触控电极，本实施例中，在形成像素电极的同时，利用像素电极的材料在过孔处形成与触控电极直接接触的导电保护图形，导电保护图形能够对过孔处暴露出的触控电极进行保护，使得形成像素电极的刻蚀液不会与触控电极接触，避免过孔处暴露出的触控电极受到损害，保证触控信号线与触控电极的电连接状态。
本公开实施例还提供了一种显示装置，包括如上所述的触控显示基板。所述显示装置可以为：液晶电视、液晶显示器、数码相框、手机、平板电脑等任何具有显示功能的产品或部件，其中，所述显示装置还包括柔性电路板、印刷电路板、背板、射频单元、网络模块、音频输出单元、输入单元、传感器、显示单元、用户输入单元、接口单元、存储器、处理器、以及电源等部件。本领域技术人员可以理解，上述显示装置的结构并不构成对显示装置的限定，显示装置可以包括上述更多或更少的部件，或者组合某些部件，或者不同的部件布置。
本公开实施例还提供了一种触控显示基板的制作方法，所述触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极和与所述 触控电极连接的触控信号线，所述公共电极复用为所述触控电极，所述公共电极线复用为所述触控信号线，所述制作方法包括：
形成所述触控电极和所述触控信号线中的任一者；
形成无机绝缘层，对所述无机绝缘层进行构图形成过孔；
形成所述触控电极和所述触控信号线中的另一者，所述触控电极通过贯穿所述无机绝缘层的过孔与所述触控信号线电连接。
其中，公共电极复用为触控电极即公共电极同时作为触控电极使用，公共电极线复用为触控信号线即公共电极线同时作为触控信号线使用。
本实施例中，触控电极通过贯穿无机绝缘层的过孔与触控信号线电连接，相比有机树脂层，无机绝缘层的厚度比较小，这样在过孔处触控电极与触控信号线之间的搭接电阻比较小，并且无机绝缘层在高温或等离子环境下也不会产生挥发物来影响过孔处的电连接状况，进而在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信号的均一性，改善触控显示基板的显示效果；并且在触控显示基板进行触控检测时，也能够提高触控电极上加载的触控信号的均一性，保证触控显示基板的触控效果。
可选地，所述制作方法具体包括：
形成所述触控电极；
形成覆盖所述触控电极的无机绝缘层，对所述无机绝缘层进行构图，形成暴露出所述触控电极的所述过孔；
在所述无机绝缘层上形成触控信号线，所述触控信号线通过所述过孔与所述触控电极连接。
进一步地，由于无机绝缘层的厚度比较小，在无机绝缘层的过孔处，触控电极与像素电极之间的距离与其他区域触控电极与像素电极之间的距离相差不大，这样在触控显示基板进行显示时，能够保证过孔处触控电极与像素电极之间形成的驱动电场的强度，保证液晶控制能力，避免出现颜色显示异常，解决斜向Mura问题。
可选地，所述无机绝缘层的厚度不大于1000纳米，可以为几十纳米或几百纳米，这样在无机绝缘层过孔处触控电极与触控信号线之间的搭接电阻比较小，在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信 号的均一性，改善触控显示基板的显示效果；并且在触控显示基板进行触控检测时，也能够提高触控电极上加载的触控信号的均一性，保证触控显示基板的触控效果。如果无机绝缘层的厚度过小，会影响触控电极与触控信号线之间的绝缘性，如果无机绝缘层的厚度过大，会使得在无机绝缘层过孔处触控电极与触控信号线之间的搭接电阻比较大，优选地，无机绝缘层的厚度可以为50-500纳米。
当然，本公开的技术方案中，并不限定无机绝缘层的厚度必须小于1000纳米，如果无机绝缘层的厚度等于1000纳米，或者稍大于1000纳米，只要比现有的有机树脂层的厚度小，都可以改善过孔处触控电极与触控信号线之间的搭接电阻，进而在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信号的均一性。
所述无机绝缘层可以位于所述触控电极远离所述触控显示基板的衬底基板的一侧，所述触控信号线位于所述无机绝缘层远离所述触控电极的一侧。当然，无机绝缘层并不局限于位于所述触控电极远离所述触控显示基板的衬底基板的一侧，还可以位于触控电极靠近衬底基板的一侧，触控信号线位于无机绝缘层靠近衬底基板的一侧。
优选地，从靠近触控显示基板的衬底基板到远离衬底基板的方向上，无机绝缘层、触控电极以及触控信号线的排布顺序为：触控电极、无机绝缘层、触控信号线。因为触控电极需要形成在平坦度较高的平面上，在触控显示基板上设置有覆盖薄膜晶体管阵列的平坦层，按照上述排布顺序的话，可以将触控电极形成在触控显示基板的平坦层上。如果无机绝缘层、触控电极以及触控信号线的排布顺序为：触控信号线、无机绝缘层、触控电极，则是将触控信号线形成在平坦层上，之后形成无机绝缘层，并将触控电极形成在无机绝缘层上，由于无机绝缘层的厚度较小，可能不能满足触控电极对平坦度的要求。
可选地，形成所述触控电极之前，所述制作方法还包括：
提供一衬底基板，在所述衬底基板上形成薄膜晶体管阵列；
形成覆盖所述薄膜晶体管阵列的平坦层；
形成所述触控电极具体为：
在所述平坦层上形成所述触控电极；
形成所述无机绝缘层之后，在所述无机绝缘层上形成触控信号线之前，所述制作方法还包括：
在所述无机绝缘层上形成所述触控显示基板的像素电极，所述像素电极通过贯穿所述平坦层和所述无机绝缘层的过孔与薄膜晶体管的漏极连接。
由于像素电极的位置在像素区域，触控信号线的位置位于相邻像素区域之间，因此，像素电极与触控信号线的位置不冲突，即像素电极在衬底基板上的正投影与触控信号线在衬底基板上的正投影不重合，这样无需将像素电极和触控信号线分层设置也可以实现像素电极与触控信号线之间的绝缘，像素电极和触控信号线可以都设置在无机绝缘层上，这样无机绝缘层既可以隔离像素电极和触控电极，还可以隔离触控电极和触控信号线，省去了隔离像素电极和触控信号线的绝缘膜层，能够简化触控显示基板的结构，减少制作触控显示基板的构图工艺的次数，降低触控显示基板的制作成本。
可选地，在形成所述像素电极的同一次构图工艺中，所述制作方法还包括：
形成位于所述过孔内、与所述触控电极直接接触的导电保护图形；
形成所述触控信号线包括：
在形成有所述像素电极和所述导电保护图形的无机绝缘层上形成所述触控信号线，所述触控信号线与所述导电保护图形直接接触，通过所述导电保护图形与所述触控电极电连接。
如果在形成触控信号线之前形成像素电极，则在对像素电极进行刻蚀时，像素电极的刻蚀液容易损害过孔处暴露出的触控电极，本实施例中，在形成像素电极的同时，利用像素电极的材料在过孔处形成与触控电极直接接触的导电保护图形，导电保护图形能够对过孔处暴露出的触控电极进行保护，使得形成像素电极的刻蚀液不会与触控电极接触，避免过孔处暴露出的触控电极受到损害，保证触控信号线与触控电极的电连接状态。
下面结合附图以及具体的实施例对本公开的触控显示基板进行进一步介绍，本实施例的触控显示基板的制作方法包括以下步骤：
步骤1、提供一衬底基板1，在衬底基板1上形成遮光层2；
其中，衬底基板1可为玻璃基板或石英基板。
遮光层2可以采用不透光金属或者遮光绝缘材料制成，对薄膜晶体管的有源层进行遮挡，薄膜晶体管的有源层在衬底基板1上的正投影落入遮光层2在衬底基板1上的正投影内，遮光层2能够防止背光模组发出的光照射到薄膜晶体管的有源层上，影响薄膜晶体管的性能。
步骤2、形成缓冲层3；
缓冲层3可以采用无机绝缘材料制作，无机绝缘材料可以选用氧化物、氮化物或者氧氮化合物，缓冲层3可以防止衬底基板1中的金属离子移动到薄膜晶体管中，影响薄膜晶体管的性能。
步骤3、形成有源层4；
具体地，可以在缓冲层3上沉积一层半导体材料，半导体材料可以采用a-Si，在半导体材料上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶完全保留区域，其中，光刻胶完全保留区域对应于有源层的图形所在区域，光刻胶未保留区域对应于有源层的图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶完全保留区域的光刻胶厚度保持不变，通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的半导体材料，形成有源层4的图形，作为像素区域及GOA区薄膜晶体管开关的有源层。
步骤4、形成栅绝缘层5；
具体地，可以采用等离子体增强化学气相沉积(PECVD)方法在完成步骤3的衬底基板1上沉积厚度为
Figure PCTCN2019082655-appb-000001
的栅绝缘层5，栅绝缘层5可以选用氧化物、氮化物或者氧氮化合物，对应的反应气体是SiH 4、NH 3、N 2或SiH 2Cl 2、NH 3、N 2。
步骤5、形成栅金属层图形15；
具体地，可以采用溅射或热蒸发的方法在完成步骤4的衬底基板1上沉积厚度约为
Figure PCTCN2019082655-appb-000002
的栅金属层，栅金属层可以是Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金，栅金属层可以为单层结构或者多层结构，多层结构比如Cu\Mo,Ti\Cu\Ti，Mo\Al\Mo等。在栅金属层上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光 刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于栅金属层图形15所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的栅金属薄膜，剥离剩余的光刻胶，形成栅金属层图形15，栅金属层图形15包括栅线和栅电极，能够控制薄膜晶体管的导通。
步骤6、形成层间绝缘层6；
具体地，可以采用等离子体增强化学气相沉积方法在完成步骤5的衬底基板1上沉积厚度为
Figure PCTCN2019082655-appb-000003
的层间绝缘层6，层间绝缘层6可以选用氧化物、氮化物或者氧氮化合物，对应的反应气体是SiH 4、NH 3、N 2或SiH 2Cl 2、NH 3、N 2。层间绝缘层6用以实现栅金属图形15和源漏金属层13的绝缘。
步骤7、形成源漏金属层图形13；
具体地，可以在完成步骤6的衬底基板1上采用磁控溅射、热蒸发或其它成膜方法沉积一层厚度约为
Figure PCTCN2019082655-appb-000004
的源漏金属层，源漏金属层可以是Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金。源漏金属层可以是单层结构或者多层结构，多层结构比如Cu\Mo，Ti\Cu\Ti，Mo\Al\Mo等。在源漏金属层上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于源漏金属层图形13所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的源漏金属层，剥离剩余的光刻胶，形成源漏金属层图形13，源漏金属层图形13包括漏电极、源电极以及数据线。
步骤8、形成平坦层7；
具体地，可以在经过步骤7的衬底基板1上涂覆一层有机树脂作为平坦层7，采用有机树脂形成的平坦层具有较好的平整度。
步骤9、形成触控电极9；
具体地，在平坦层7上通过溅射或热蒸发的方法沉积厚度约为
Figure PCTCN2019082655-appb-000005
Figure PCTCN2019082655-appb-000006
的透明导电层，透明导电层可以是ITO、IZO或者其他的透明金属氧化物， 在透明导电层上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于触控电极9所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的透明导电层薄膜，剥离剩余的光刻胶，形成触控电极9，触控电极9同时复用为触控显示基板的公共电极，如图5所示，触控电极9包括多个独立的子触控电极。
步骤10、形成钝化层10；
具体地，可以在完成步骤9的衬底基板1上采用磁控溅射、热蒸发、PECVD或其它成膜方法沉积厚度为
Figure PCTCN2019082655-appb-000007
的钝化层，钝化层可以选用氧化物、氮化物或者氧氮化合物，具体地，钝化层材料可以是SiNx，SiOx或Si(ON)x，钝化层还可以使用Al 2O 3。钝化层可以是单层结构，也可以是采用氮化硅和氧化硅构成的两层结构。其中，硅的氧化物对应的反应气体可以为SiH 4，N 2O；氮化物或者氧氮化合物对应气体可以是SiH 4，NH 3，N 2或SiH 2Cl 2，NH 3，N 2。对钝化层10以及平坦层7进行构图，形成暴露出漏电极的像素电极过孔和暴露出触控电极的触控电极过孔。
步骤11、形成像素电极11和导电保护图形16；
具体地，在完成步骤10的衬底基板1上通过溅射或热蒸发的方法沉积厚度约为
Figure PCTCN2019082655-appb-000008
的透明导电层，透明导电层可以是ITO、IZO或者其他的透明金属氧化物，在透明导电层上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于像素电极11和导电保护图形16的图形所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的透明导电层薄膜，剥离剩余的光刻胶，形成像素电极11和导电保护图形16的图形，像素电极11通过像素电极过孔与漏电极连接，导电保护图形16通过触控电极过孔与触控电极9连接。
步骤12、形成触控信号线12。
具体地，可以在完成步骤11的衬底基板1上采用磁控溅射、热蒸发或其 它成膜方法沉积一层厚度约为
Figure PCTCN2019082655-appb-000009
的金属层，金属层可以是Cu，Al，Ag，Mo，Cr，Nd，Ni，Mn，Ti，Ta，W等金属以及这些金属的合金。金属层可以是单层结构或者多层结构，多层结构比如Cu\Mo，Ti\Cu\Ti，Mo\Al\Mo等。在金属层上涂覆一层光刻胶，采用掩膜板对光刻胶进行曝光，使光刻胶形成光刻胶未保留区域和光刻胶保留区域，其中，光刻胶保留区域对应于触控信号线12的图形所在区域，光刻胶未保留区域对应于上述图形以外的区域；进行显影处理，光刻胶未保留区域的光刻胶被完全去除，光刻胶保留区域的光刻胶厚度保持不变；通过刻蚀工艺完全刻蚀掉光刻胶未保留区域的金属层，剥离剩余的光刻胶，形成触控信号线12，触控信号线12通过导电保护图形16与触控电极9电连接。
如图5所示，每一条触控信号线12与一个子触控电极连接，每一条触控信号线12可以通过多个触控电极过孔14与一个子触控电极连接。
经过上述步骤1-12即可得到如图3和图4所示的触控显示基板，本实施例的触控显示基板依次包括：衬底基板1，位于衬底基板1上的遮光层2，位于遮光层2上的缓冲层3，位于缓冲层3上的有源层4，栅绝缘层5，层间绝缘层6，平坦层7，位于平坦层7上的触控电极9，覆盖触控电极9的钝化层10(即上述无机绝缘层)，位于钝化层10上的像素电极11和导电保护图形16；位于导电保护图形16上的触控信号线12。
本实施例中，触控电极通过贯穿钝化层的过孔与触控信号线电连接，相比有机树脂层，钝化层的厚度比较小，一般小于1微米，为几十纳米-几百纳米厚，这样在过孔处触控电极与触控信号线之间的搭接电阻比较小，并且无机绝缘层在高温或等离子环境下也不会产生挥发物来影响过孔处的电连接状况，进而在触控显示基板进行显示时，能够提高触控电极上加载的公共电压信号的均一性，改善触控显示基板的显示效果；并且在触控显示基板进行触控检测时，也能够提高触控电极上加载的触控信号的均一性，保证触控显示基板的触控效果。
进一步地，由于钝化层的厚度比较小，在钝化层的过孔处，触控电极与像素电极之间的距离与其他区域触控电极与像素电极之间的距离相差不大，这样在触控显示基板进行显示时，能够保证过孔处触控电极与像素电极之间 形成的驱动电场的强度，保证液晶控制能力，避免出现颜色显示异常，解决斜向Mura问题。
需要说明，本说明书中的各个实施例均采用递进的方式描述，各个实施例之间相同相似的部分互相参见即可，每个实施例重点说明的都是与其他实施例的不同之处。尤其，对于实施例而言，由于其基本相似于产品实施例，所以描述得比较简单，相关之处参见产品实施例的部分说明即可。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
在上述实施方式的描述中，具体特征、结构、材料或者特点可以在任何的一个或多个实施例或示例中以合适的方式结合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。

Claims (12)

  1. 一种触控显示基板，所述触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极和与所述触控电极连接的触控信号线，所述公共电极复用为所述触控电极，所述公共电极线复用为所述触控信号线，其中，还包括：位于所述触控电极和所述触控信号线之间的无机绝缘层，所述触控电极通过贯穿所述无机绝缘层的过孔与所述触控信号线电连接，所述触控电极、所述无机绝缘层和所述触控信号线依次层叠设置。
  2. 根据权利要求1所述的触控显示基板，其中，所述触控显示基板包括有多条触控信号线，所述触控电极包括多个相互独立的子触控电极，所述触控信号线与所述子触控电极一一对应，每一所述子触控电极与对应的所述触控信号线连接。
  3. 根据权利要求1所述的触控显示基板，其中，所述无机绝缘层的厚度不大于1000纳米。
  4. 根据权利要求1所述的触控显示基板，其中，所述无机绝缘层位于所述触控电极远离所述触控显示基板的衬底基板的一侧，所述触控信号线位于所述无机绝缘层远离所述触控电极的一侧。
  5. 根据权利要求4所述的触控显示基板，其中，所述触控显示基板具体包括：
    衬底基板；
    位于所述衬底基板上的薄膜晶体管阵列；
    覆盖所述薄膜晶体管阵列的平坦层；
    位于所述平坦层上的所述触控电极；
    覆盖所述触控电极的无机绝缘层；
    位于所述无机绝缘层上的所述触控显示基板的像素电极和所述触控信号线，所述像素电极通过贯穿所述平坦层和所述无机绝缘层的过孔与薄膜晶体管的漏极连接，所述触控信号线通过贯穿所述无机绝缘层的过孔与所述触控电极连接。
  6. 根据权利要求5所述的触控显示基板，其中，所述触控显示基板还包 括：
    位于所述过孔内、与所述触控电极直接接触的导电保护图形，所述触控信号线与所述导电保护图形直接接触，通过所述导电保护图形与所述触控电极电连接，所述导电保护图形与所述像素电极通过同一次构图工艺形成。
  7. 一种显示装置，其中，包括如权利要求1-6中任一项所述的触控显示基板。
  8. 一种触控显示基板的制作方法，所述触控显示基板包括公共电极和与公共电极连接的公共电极线，还包括触控电极和与所述触控电极连接的触控信号线，所述公共电极复用为所述触控电极，所述公共电极线复用为所述触控信号线，其中，所述制作方法包括：
    形成所述触控电极和所述触控信号线中的任一者；
    形成无机绝缘层，对所述无机绝缘层进行构图形成过孔；
    形成所述触控电极和所述触控信号线中的另一者，所述触控电极通过贯穿所述无机绝缘层的过孔与所述触控信号线电连接。
  9. 根据权利要求8所述的触控显示基板的制作方法，其中，所述无机绝缘层的厚度不大于1000纳米。
  10. 根据权利要求8所述的触控显示基板的制作方法，其中，所述制作方法具体包括：
    形成所述触控电极；
    形成覆盖所述触控电极的无机绝缘层，对所述无机绝缘层进行构图，形成暴露出所述触控电极的所述过孔；
    在所述无机绝缘层上形成触控信号线，所述触控信号线通过所述过孔与所述触控电极连接。
  11. 根据权利要求10所述的触控显示基板的制作方法，其中，形成所述触控电极之前，所述制作方法还包括：
    提供一衬底基板，在所述衬底基板上形成薄膜晶体管阵列；
    形成覆盖所述薄膜晶体管阵列的平坦层；
    形成所述触控电极具体为：
    在所述平坦层上形成所述触控电极；
    形成所述无机绝缘层之后，在所述无机绝缘层上形成触控信号线之前，所述制作方法还包括：
    在所述无机绝缘层上形成所述触控显示基板的像素电极，所述像素电极通过贯穿所述平坦层和所述无机绝缘层的过孔与薄膜晶体管的漏极连接。
  12. 根据权利要求11所述的触控显示基板的制作方法，其中，在形成所述像素电极的同一次构图工艺中，所述制作方法还包括：
    形成位于所述过孔内、与所述触控电极直接接触的导电保护图形；
    形成所述触控信号线包括：
    在形成有所述像素电极和所述导电保护图形的无机绝缘层上形成所述触控信号线，所述触控信号线与所述导电保护图形直接接触，通过所述导电保护图形与所述触控电极电连接。
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