WO2022013934A1 - 蛍光ｘ線分析装置 - Google Patents

蛍光ｘ線分析装置 Download PDF

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Publication number
WO2022013934A1
WO2022013934A1 PCT/JP2020/027312 JP2020027312W WO2022013934A1 WO 2022013934 A1 WO2022013934 A1 WO 2022013934A1 JP 2020027312 W JP2020027312 W JP 2020027312W WO 2022013934 A1 WO2022013934 A1 WO 2022013934A1
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WIPO (PCT)
Prior art keywords
sample
fluorescent
rays
layer
derived
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Ceased
Application number
PCT/JP2020/027312
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English (en)
French (fr)
Japanese (ja)
Inventor
祐司 森久
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shimadzu Corp
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Shimadzu Corp
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Publication date
Application filed by Shimadzu Corp filed Critical Shimadzu Corp
Priority to CN202080102888.3A priority Critical patent/CN115867793B/zh
Priority to PCT/JP2020/027312 priority patent/WO2022013934A1/ja
Priority to JP2022536010A priority patent/JP7416254B2/ja
Priority to US18/015,655 priority patent/US12270773B2/en
Priority to EP20945235.8A priority patent/EP4184153A4/en
Priority to TW110117616A priority patent/TWI821667B/zh
Publication of WO2022013934A1 publication Critical patent/WO2022013934A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
    • G01N23/22—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material
    • G01N23/223—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00 by measuring secondary emission from the material by irradiating the sample with X-rays or gamma-rays and by measuring X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/07—Investigating materials by wave or particle radiation secondary emission
    • G01N2223/076—X-ray fluorescence
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2223/00—Investigating materials by wave or particle radiation
    • G01N2223/30—Accessories, mechanical or electrical features

Definitions

  • the present invention relates to a fluorescent X-ray analyzer.
  • the fluorescent X-ray analyzer irradiates a solid sample, a powder sample, or a liquid sample with primary X-rays, and detects fluorescent X-rays excited and emitted by the primary X-rays to detect the elements contained in the sample. It performs qualitative and quantitative analysis.
  • fluorescent X-ray analyzers are widely used as useful analyzers, and their analysis targets range from the metal field to the food field.
  • FIG. 3 is a schematic diagram showing the configuration of a conventional general fluorescent X-ray analyzer.
  • the fluorescent X-ray analyzer 101 includes a sample chamber 20 in which the sample S is arranged, and an apparatus housing 60 in which the X-ray source 10 and the detector 30 are arranged inside.
  • the sample chamber 20 has a quadrangular plate-shaped sample base 21 and a quadrangular tubular upper chamber 22 having a quadrangular plate-shaped upper surface.
  • a circular opening 21a is formed in the central portion of the sample base 21.
  • the upper chamber 22 is rotatably attached to the sample base 21 so that the lower surface of one side wall of the upper chamber 22 and one side of the upper surface side of the sample base 21 are axes.
  • the inside of the upper chamber 22 is connected to a vacuum pump (not shown), and is exhausted to a vacuum by the vacuum pump. According to such a sample chamber 20, by opening the upper chamber 22, the sample S can be arranged so that the analysis surface of the sample S closes the opening 21a, and after the sample S is arranged, the upper chamber 22 is opened.
  • the inside of the upper chamber 22 can be closed and evacuated to a vacuum.
  • the device housing 60 has a square cylinder shape having a quadrangular plate-shaped lower surface, and a peripheral edge portion on the lower surface side of the sample base 21 is attached to the upper surface of the side wall surface of the square cylinder shape.
  • the X-ray source 10 and the detector 30 are arranged inside the apparatus housing 60.
  • the X-ray source 10 is, for example, a point-focus X-ray tube, which has a housing, and has a target (not shown) as an anode and a filament (not shown) as a cathode inside the housing. Have been placed. As a result, by applying a high voltage to the target and a low voltage to the filament, the thermions radiated from the filament collide with the end face of the target, and the primary X-rays generated at the end face of the target are emitted. It is designed to do.
  • the X-ray source 10 is fixedly attached to the lower left of the opening 21a of the sample base 21, and is configured such that the primary X-ray emitted from the X-ray source 10 is incident on the opening 21a at an incident angle ⁇ . ing. Therefore, the analysis surface of the sample S is brought into contact with the sample S so as to close the opening 21a, so that the analysis surface of the sample S is irradiated with the primary X-ray at an incident angle ⁇ .
  • the detector 30 has, for example, a housing in which an introduction window is formed, and a detection element (semiconductor element) for detecting fluorescent X-rays is arranged inside the housing.
  • the detector 30 is fixedly attached to the lower right of the opening 21a of the sample base 21, and is configured so that fluorescent X-rays generated on the analysis surface of the sample S are incident on the introduction window. Therefore, when the analysis surface of the sample S is irradiated with the primary X-rays, the detector 30 detects the fluorescent X-rays generated on the analysis surface of the sample S.
  • the sample S is housed in the sample chamber 20 in order to reduce the risk of the user being exposed to the X-rays that have passed through the sample S.
  • the sample base 21 and the upper chamber 22 constituting the sample chamber 20 are formed of a shielding material. That is, the sample chamber 20 is formed of a shielding material. It is shown in Japanese Patent Application Laid-Open No. 2011-022163 (Patent Document 1) that, for example, iron having a thickness of 3.2 mm is used as a shielding material.
  • FIG. 4 shows the relationship between the thickness of iron and the X-ray transmittance. With reference to FIG.
  • Patent Document 2 Japanese Patent Application Laid-Open No. 2004-197151 (Patent Document 2) is available.
  • the fluorescent X-rays of nickel generated by the X-rays transmitted through the sample S hitting the sample base 21 and the upper chamber 22 of the sample chamber 20 are also described as “impure rays derived from nickel”, and the X-rays transmitted through the sample S are the samples.
  • the fluorescent X-rays of iron generated by hitting the sample base 21 and the upper chamber 22 of the chamber 20 are also referred to as “impure rays derived from iron”.
  • Nickel can be an analysis target in the fluorescent X-ray analyzer 101.
  • the sample S is a drug, food, chemical, or the like
  • a trace amount of nickel can be analyzed for the purpose of measuring impurities in the sample S.
  • the impure wire derived from nickel is considered to be a great obstacle to the trace analysis of nickel in the sample S.
  • An object of the present invention is to reduce the influence of nickel-derived impure rays and iron-derived impure rays on fluorescent X-ray analysis in a fluorescent X-ray analyzer including an iron sample chamber, while reducing the influence of an acid solvent on the inner surface of the sample chamber.
  • the purpose is to suppress the occurrence of darkening.
  • the present invention provides the fluorescent X-ray analyzer shown below.
  • a fluorescent X-ray analyzer in which at least a part of the inner surface thereof is covered with a layer made of aluminum derived from molten aluminum. This makes it possible to reduce the influence of nickel-derived impurities and iron-derived impurities on fluorescent X-ray analysis. Further, it is possible to suppress the generation of darkening on the inner surface of the sample chamber due to the acid solvent.
  • the influence of the nickel-derived impure wire and the iron-derived impure wire on the fluorescent X-ray analysis is reduced, and the surface of the inside of the sample chamber due to the acid solvent is reduced. The occurrence of darkening can be suppressed.
  • FIG. 1 is a schematic view showing an example of a fluorescent X-ray analyzer according to the present invention.
  • FIG. 2 is a schematic view showing another example of the fluorescent X-ray analyzer according to the present invention.
  • FIG. 3 is a schematic view showing an example of a conventional fluorescent X-ray analyzer.
  • FIG. 4 is a diagram showing the relationship between the thickness of iron and the X-ray transmittance.
  • FIG. 5 is a diagram showing the relationship between the thickness of the layer made of aluminum derived from molten aluminum and the X-ray transmittance.
  • FIG. 6 is a diagram showing the relationship between the thickness of the layer made of carbon and the X-ray transmittance.
  • FIG. 1 is a schematic view showing an example of a fluorescent X-ray analyzer according to an embodiment of the present invention.
  • the same reference numerals are given to the configurations common to the above-mentioned conventional fluorescent X-ray analyzer 101.
  • the fluorescent X-ray analyzer 1 includes an X-ray source 10 for irradiating the sample S with X-rays and a detector 30 for detecting the fluorescent X-rays emitted from the sample S by the irradiation of the X-rays. And an iron sample chamber 20 for storing the sample S. At least a part of the inner surface of the sample chamber 20 is covered with a layer 40 made of aluminum derived from molten aluminum. The inner surface of the sample chamber 20 is not nickel-plated.
  • the "layer 40 made of aluminum derived from molten aluminum” is also referred to as "molten aluminum layer 40".
  • the inner surface of the iron sample chamber 20 is not nickel-plated. Therefore, it is considered that the impure wire derived from nickel is not generated. That is, in the fluorescent X-ray analyzer 1 according to the present invention, the generation of nickel-derived impure rays can be suppressed, and the influence of nickel-derived impure rays on fluorescent X-ray analysis can be reduced.
  • the fluorescent X-ray analyzer 1 In the fluorescent X-ray analyzer 1 according to the present invention, at least a part of the inner surface of the iron sample chamber 20 is covered with the molten aluminum layer 40.
  • the X-rays generated from the X-ray source 10 pass through the molten aluminum layer 40 and reach the sample base 21 and the upper chamber 22 of the sample chamber 20. As a result, impure wire derived from iron is generated.
  • the molten aluminum layer 40 attenuates the impure wire derived from iron.
  • the iron-derived impure wire generated from the iron upper chamber 22 is the molten wire coated on the upper chamber 22. It is considered that the material is attenuated when it passes through the aluminum layer 40. That is, in the fluorescent X-ray analyzer 1 according to the present invention, since the generation of iron-derived impure rays is suppressed, the influence of iron-derived impure rays on the fluorescent X-ray analysis can be reduced.
  • the molten aluminum layer 40 covers at least a part of the inner surface of the iron sample chamber 20. This makes it possible to reduce the influence of iron-derived impure rays on fluorescent X-ray analysis as described above.
  • the molten aluminum layer 40 may cover about 10%, about 20%, about 30%, or about 40% of the inner surface of the iron sample chamber 20. % May be coated, about 50% may be coated, about 60% may be coated, about 70% may be coated, or about 80% may be coated. Alternatively, the entire inner surface of the sample chamber 20 may be covered. In the present specification, "covering substantially the entire inner surface of the sample chamber 20" means that 90% or more of the inner surface of the sample chamber 20 is covered.
  • the generated iron-derived impure wire is significantly attenuated by the molten aluminum layer 40, so that the fluorescent X by the iron-derived impure wire
  • the effect on line analysis can be significantly reduced.
  • the molten aluminum layer 40 is superior in corrosion resistance as compared with nickel plating. Therefore, it is expected that the generation of darkening on the inner surface of the sample chamber 20 due to the acid solvent is suppressed by covering at least a part of the inner surface of the iron sample chamber 20 with the molten aluminum layer 40. When substantially the entire inner surface of the sample chamber 20 is covered with the molten aluminum layer 40, it is expected that the occurrence of darkening of the sample chamber 20 due to the acid solvent is significantly suppressed.
  • the fluorescent X-ray analyzer 1 in the fluorescent X-ray analyzer 1 according to the present invention, darkening occurs on the inner surface of the sample chamber 20 due to the acid solvent while the influence of the nickel-derived impure wire and the iron-derived impure wire on the fluorescent X-ray analysis is reduced. Is also suppressed.
  • the molten aluminum layer 40 is a layer made of aluminum derived from molten aluminum.
  • the molten aluminum layer 40 can be formed, for example, by the steps (1) to (4) shown below. (1) Prepare clean steel as a base material for the iron sample chamber 20. (2) Flux treatment is performed on the clean steel as a pretreatment. (3) Prepare a molten aluminum solution kept above the melting point (about 660 ° C.). (4) Immerse the clean steel that has undergone flux treatment in the molten aluminum solution for several minutes.
  • the surface of the steel can be covered with the molten aluminum layer. It is considered that a passivation oxide film is formed on the outermost surface of the molten aluminum layer. It is expected that such an oxide film suppresses the generation of darkening caused by the acid solvent.
  • the thickness of the molten aluminum layer 40 is not particularly limited, but the preferable effect of applying the molten aluminum layer 40 instead of nickel plating (that is, the iron sample chamber has a structure in which the inner surface thereof is nickel-plated). It is desirable that the thickness is such that a damping effect (greater than the damping effect of the impure wire derived from iron obtained) can be obtained.
  • the thickness of the nickel plating is usually 5 to 15 ⁇ m, and it is considered that the impure wire derived from iron can be attenuated to 30 to 67% depending on the thickness. Therefore, it is desirable that the molten aluminum layer 40 has a thickness capable of attenuating the impure wire derived from iron to less than 30%.
  • the impure wire derived from iron that has passed through the molten aluminum layer 40 is about 17.0% as compared with that before passing through the molten aluminum layer 40. It is preferable because it is attenuated to.
  • the thickness of the molten aluminum layer 40 is, for example, 100 ⁇ m
  • the iron-derived impure wire that has passed through the molten aluminum layer 40 is attenuated to about 8.5% as compared with that before passing through the molten aluminum layer 40, which is more preferable. ..
  • the iron-derived impure wire that has passed through the molten aluminum layer 40 is attenuated to about 0.8% as compared with that before passing through the molten aluminum layer 40, which is more preferable. ..
  • the thickness of the molten aluminum layer 40 is less than 25 ⁇ m, there may be room for improvement in the attenuation of the impure wire derived from iron. If the thickness of the molten aluminum layer 40 exceeds 1000 ⁇ m, the formation of the molten aluminum layer 40 itself may become difficult.
  • the thickness of the molten aluminum layer 40 can be 25 ⁇ m or more and less than 1000 ⁇ m.
  • fluorescent X-rays Al—K: 1486eV
  • the influence of the fluorescent X-rays of such aluminum on the fluorescent X-ray analysis results is limited. This is because the fluorescent X-rays of aluminum usually have significantly different energies from the elements to be analyzed by the fluorescent X-ray analyzer.
  • fluorescent X-rays of aluminum are also referred to as "impure rays derived from aluminum”.
  • a coating layer 50 may be further provided on the molten aluminum layer 40.
  • the coating layer 50 is a layer that attenuates the impure wire derived from aluminum. It is considered that the aluminum-derived impure wire generated from the molten aluminum layer 40 is attenuated when passing through the coating layer 50 arranged on the molten aluminum layer 40. This is expected to significantly reduce the effect of aluminum-derived impure rays on fluorescent X-ray analysis.
  • the material constituting the coating layer 50 attenuates the impure rays derived from aluminum, the material itself does not generate fluorescent X-rays that hinder fluorescent X-ray analysis, and the shape of the molten aluminum layer 40 is, for example, a free curved surface. Even in a complicated case such as, there is no particular limitation as long as it can be arranged on the molten aluminum layer 40.
  • the coating layer 50 may be a layer made of carbon, boron nitride (BN), polyimide, polymethylmethacrylate (PMMA), or the like.
  • the coating layer 50 is a layer made of carbon. As shown in FIG. 6, when the thickness of the coating layer 50 made of carbon is 50 ⁇ m, the impure wire derived from aluminum that has passed through the coating layer 50 is about 0.04 as compared with that before passing through the coating layer 50. It is attenuated to%. This significantly reduces the effect of aluminum-derived impure rays on X-ray fluorescence analysis. Even when the coating layer 50 is a layer made of BN, polyimide, or PMMA, it is considered that the impure wire derived from aluminum is attenuated to the same extent as the coating layer 50 made of carbon.
  • the fluorescent X-ray analyzer has an alloy layer made of a material (for example, iron) constituting the sample chamber and aluminum between the inner surface of the sample chamber and the layer made of aluminum derived from molten aluminum. It is preferable to have.
  • the alloy layer preferably has a composition ratio of 5: 1 to 1: 5 between the material constituting the sample chamber and aluminum, and more preferably has a composition ratio of 2: 1 to 1: 2. Most preferably, it has a composition ratio of 1: 1.
  • the fluorescent X-ray analyzer has a layer structure having an alloy layer on the inner surface side of the sample chamber as a molten aluminum layer and an aluminum layer on the alloy layer on the inner surface of the sample chamber. It is desirable that the molten aluminum layer has a thickness capable of attenuating the impure wire derived from iron to less than 30%.
  • the total thickness of the alloy layer and the aluminum layer may be 25 ⁇ m or more and less than 1000 ⁇ m. can.
  • the aluminum layer is preferably 12.5 to 500 ⁇ m, more preferably 25 to 200 ⁇ m, and further preferably 50 to 100 ⁇ m. preferable.
  • 1,101 X-ray fluorescence analyzer 10 X-ray source, 20 sample chamber, 21 sample base, 22 upper chamber, 30 detector, 40 molten aluminum layer, 50 coating layer, 60 device housing, 21a opening, S sample.

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  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • General Health & Medical Sciences (AREA)
  • General Physics & Mathematics (AREA)
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  • Analysing Materials By The Use Of Radiation (AREA)
PCT/JP2020/027312 2020-07-14 2020-07-14 蛍光ｘ線分析装置 Ceased WO2022013934A1 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
CN202080102888.3A CN115867793B (zh) 2020-07-14 2020-07-14 荧光x射线分析装置
PCT/JP2020/027312 WO2022013934A1 (ja) 2020-07-14 2020-07-14 蛍光ｘ線分析装置
JP2022536010A JP7416254B2 (ja) 2020-07-14 2020-07-14 蛍光ｘ線分析装置
US18/015,655 US12270773B2 (en) 2020-07-14 2020-07-14 X ray fluorescence analyzer
EP20945235.8A EP4184153A4 (en) 2020-07-14 2020-07-14 X-ray fluorescence analyzer
TW110117616A TWI821667B (zh) 2020-07-14 2021-05-17 螢光x射線分析裝置

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Application Number Priority Date Filing Date Title
PCT/JP2020/027312 WO2022013934A1 (ja) 2020-07-14 2020-07-14 蛍光ｘ線分析装置

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WO2022013934A1 true WO2022013934A1 (ja) 2022-01-20

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US (1) US12270773B2 (https=)
EP (1) EP4184153A4 (https=)
JP (1) JP7416254B2 (https=)
CN (1) CN115867793B (https=)
TW (1) TWI821667B (https=)
WO (1) WO2022013934A1 (https=)

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150179A (en) * 1977-12-19 1979-04-17 University College Cardiff Hot dip aluminizing of steel strip
JPH06330346A (ja) * 1993-05-24 1994-11-29 Nippon Steel Corp アルミメッキ鋼板
JP2004043882A (ja) * 2002-07-11 2004-02-12 Union Steel Manufacturing Co Ltd アルミニウム合金メッキ鋼板のメッキ方法
JP2004197151A (ja) 2002-12-18 2004-07-15 Lucite Japan Kk 耐食性鉄材の製造方法
JP2011022163A (ja) 2010-10-29 2011-02-03 Shimadzu Corp Ｘ線分析装置
JP2016109502A (ja) * 2014-12-04 2016-06-20 株式会社日立ハイテクサイエンス 蛍光ｘ線分析装置
JP2016114394A (ja) * 2014-12-12 2016-06-23 日鐵住金建材株式会社 放射能汚染物質隔離容器

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2336652A1 (de) * 1973-07-18 1975-01-30 Siemens Ag Schichtsystem zur absorption von roentgenstrahlen
JP3166638B2 (ja) * 1996-11-29 2001-05-14 株式会社島津製作所 蛍光ｘ線分析装置
US6266390B1 (en) 1998-09-21 2001-07-24 Spectramet, Llc High speed materials sorting using x-ray fluorescence
JP4166099B2 (ja) * 2003-02-14 2008-10-15 Ｔｄｋ株式会社 試料容器
JP4854005B2 (ja) * 2006-02-24 2012-01-11 エスアイアイ・ナノテクノロジー株式会社 蛍光ｘ線分析装置
JP2013108726A (ja) * 2011-11-24 2013-06-06 Mitsubishi Electric Corp 検知装置、及び、検知方法
US10175184B2 (en) * 2015-06-22 2019-01-08 Moxtek, Inc. XRF analyzer for light element detection
FR3052259B1 (fr) * 2016-06-02 2023-08-25 Avenisense Capteur, procede de calibration d'un capteur et methode automatisee de suivi en ligne de l'evolution d'un corps liquide
JP6642372B2 (ja) * 2016-10-14 2020-02-05 株式会社島津製作所 Ｘ線分析装置
US10914694B2 (en) * 2017-08-23 2021-02-09 Government Of The United States Of America, As Represented By The Secretary Of Commerce X-ray spectrometer

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4150179A (en) * 1977-12-19 1979-04-17 University College Cardiff Hot dip aluminizing of steel strip
JPH06330346A (ja) * 1993-05-24 1994-11-29 Nippon Steel Corp アルミメッキ鋼板
JP2004043882A (ja) * 2002-07-11 2004-02-12 Union Steel Manufacturing Co Ltd アルミニウム合金メッキ鋼板のメッキ方法
JP2004197151A (ja) 2002-12-18 2004-07-15 Lucite Japan Kk 耐食性鉄材の製造方法
JP2011022163A (ja) 2010-10-29 2011-02-03 Shimadzu Corp Ｘ線分析装置
JP2016109502A (ja) * 2014-12-04 2016-06-20 株式会社日立ハイテクサイエンス 蛍光ｘ線分析装置
JP2016114394A (ja) * 2014-12-12 2016-06-23 日鐵住金建材株式会社 放射能汚染物質隔離容器

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4184153A4

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EP4184153A4 (en) 2024-04-17
CN115867793B (zh) 2025-08-05
US12270773B2 (en) 2025-04-08
JPWO2022013934A1 (https=) 2022-01-20
TW202202835A (zh) 2022-01-16
TWI821667B (zh) 2023-11-11
US20230251214A1 (en) 2023-08-10
EP4184153A1 (en) 2023-05-24
CN115867793A (zh) 2023-03-28
JP7416254B2 (ja) 2024-01-17

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