WO2022007584A1 - 一种led显示屏 - Google Patents

一种led显示屏 Download PDF

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Publication number
WO2022007584A1
WO2022007584A1 PCT/CN2021/099402 CN2021099402W WO2022007584A1 WO 2022007584 A1 WO2022007584 A1 WO 2022007584A1 CN 2021099402 W CN2021099402 W CN 2021099402W WO 2022007584 A1 WO2022007584 A1 WO 2022007584A1
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Prior art keywords
layer
emitting chip
display screen
led light
light
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PCT/CN2021/099402
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English (en)
French (fr)
Inventor
林义
刘凌俊
刘世良
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深圳市洲明科技股份有限公司
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Publication of WO2022007584A1 publication Critical patent/WO2022007584A1/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H01L33/54—Encapsulations having a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Definitions

  • the invention relates to the technical field of LED display screen packaging, in particular to an LED display screen.
  • Mini LED light-emitting chips has promoted the development of LED displays below P1.0, and also promoted the development of COB integrated packaging technology.
  • COB integrated packaging technology can achieve higher luminous density, reliability and lower packaging cost of LED display through a one-time overall packaging solution.
  • the LED display unit of the integrated packaging scheme still faces the problem of the consistency of ink color on the surface of different display modules and the problem of moisture absorption of the packaging layer.
  • the main purpose of the present invention is to provide an LED display screen, which aims to solve the problem of moisture absorption and ink color consistency of the existing COB-packaged LED display screen.
  • the present invention provides an LED display screen
  • the LED display screen includes a PCB substrate and a plurality of LED light-emitting chip components evenly distributed on the front surface of the PCB substrate, the front surface of the PCB substrate and the
  • the outer surfaces of several LED light-emitting chip assemblies are covered with moisture-proof nano-film layers, the light gap formed between two LED light-emitting chip assemblies is covered with a black ink layer, and the upper surface of the LED light-emitting chip assemblies is also covered with light diffusion.
  • the black ink layer and the light diffusion layer are both located on the moisture-proof nano-film layer, and the upper surfaces of the black ink layer and the light diffusion layer are covered with a transparent encapsulation layer.
  • the LED display screen provided by the present invention, by adding a moisture-proof nano-film layer between the outer surface of the LED light-emitting chip assembly and the transparent packaging layer, it can effectively avoid the phenomenon of water vapor entering the LED light-emitting chip circuit, resulting in electrochemical migration and other phenomena, causing The problem of short circuit of the light-emitting chip and the broken gold wire.
  • adding a black ink layer on the lamp slit can effectively improve the contrast of the LED display, and adding a light diffusion layer on the upper surface of the LED light-emitting chip assembly can effectively improve the LED chip. excellent light-emitting effect, reducing the moiré problem. It can be seen that this technical solution can effectively solve the problems of moisture absorption and ink color consistency of the existing COB packaged LED display screen.
  • FIG. 1 is a schematic structural diagram of an LED display screen according to an embodiment of the present invention.
  • an embodiment of the present invention provides an LED display screen 100 .
  • the LED display screen 100 includes a PCB substrate 110 and a plurality of LED light-emitting chip assemblies 120 evenly distributed on the front surface of the PCB substrate 110 .
  • the outer surfaces of the plurality of LED light-emitting chip assemblies 120 are covered with moisture-proof nano-film layers 130, the lamp gap formed between the two LED light-emitting chip assemblies 120 is covered with a black ink layer 140, and the upper surface of the LED light-emitting chip assemblies 120 is also covered with light.
  • the diffusion layer 150, the black ink layer 140 and the light diffusion layer 150 are all located on the moisture-proof nano-film layer 130, and the upper surfaces of the black ink layer 140 and the light diffusion layer 150 are covered with a transparent encapsulation layer 160.
  • the PCB substrate 110 is preferably an FR-4 substrate board.
  • the LED light-emitting chip assembly 120 includes a red Mini LED light-emitting chip, a green Mini LED light-emitting chip, and a blue Mini LED light-emitting chip. type arrangement, and is attached to the front surface of the PCB substrate 110 through a die-bonding wire structure.
  • the moisture-proof nanomembrane layer 130 includes a silicon oxide layer, a titanium oxide layer, an aluminum oxide layer, a silicon nitride layer, a fluorosilane layer, an oxysilane layer, a polyurethane layer, a modified phenolic resin layer, a modified silicone resin layer, and a polyamide layer
  • the thickness of the moisture-proof nano-film layer 130 is preferably 0.5 ⁇ m-10 ⁇ m.
  • the upper surface of the black ink layer 140 is lower than the upper surface of the LED light-emitting chip assembly 120 , and the thickness of the black ink layer is preferably 10 ⁇ m-50 ⁇ m, which can better improve the contrast of the LED display screen without affecting the LED light-emitting chip assembly 120 .
  • Luminous brightness is preferably 10 ⁇ m-50 ⁇ m, which can better improve the contrast of the LED display screen without affecting the LED light-emitting chip assembly 120 .
  • the light diffusing layer 150 is a modified silicone resin layer doped with a light diffusing agent or an epoxy resin layer doped with a light diffusing agent, and the doping ratio is 1/1,000 to 5/1,000, that is, modified silicone
  • the resin layer or epoxy resin layer is doped with a light diffusing agent of one thousandth to five thousandths, and the thickness of the light diffusing layer is preferably 5 ⁇ m-20 ⁇ m, so as to effectively improve the light emitting effect of the LED chip and reduce the moiré problem.
  • the transparent encapsulation layer 160 is preferably a transparent modified epoxy resin layer, which is encapsulated on the lamp surface of the LED display screen 100 by a COB integrated encapsulation process.
  • the encapsulation process of the transparent modified epoxy resin layer It can be molding, potting machining, silicone or epoxy prepreg pressing.
  • the driving IC components 170 are attached to the back of the PCB substrate 110 , and the driving IC components 170 are mainly attached to the back of the PCB substrate by the SMD (Surface Mounted Devices) process, so as to drive several LED light-emitting chip components 120 to work. .
  • SMD Surface Mounted Devices
  • the LED display screen of the embodiment of the present invention by adding a moisture-proof nano-film layer between the outer surface of the LED light-emitting chip assembly and the transparent packaging layer, the phenomenon of water vapor entering the LED light-emitting chip circuit and causing electrochemical migration can be effectively avoided. , causing the short circuit of the light-emitting chip and the breakage of the gold wire.
  • adding a black ink layer on the lamp slit can effectively improve the contrast of the LED display, and adding a light diffusion layer on the upper surface of the LED light-emitting chip assembly can effectively improve the The light-emitting effect of the LED chip reduces the moiré problem.
  • the problem of moisture absorption and ink color consistency of the existing COB-packaged LED display screen can be effectively solved. Therefore, it has industrial applicability.

Abstract

本发明公开一种LED显示屏，包括PCB基板（110）以及均匀分布在PCB基板（110）的正面上的若干LED发光芯片组件（120），PCB基板（110）的正面及若干LED发光芯片组件（120）的外表面均覆有防潮纳米膜层（130），两两LED发光芯片组件（120）之间形成的灯缝覆有黑色油墨层（140），LED发光芯片组件（120）的上表面覆有光扩散层（150），且黑色油墨层（140）及光扩散层（150）均位于防潮纳米膜层130之上，黑色油墨层（140）及光扩散层（150）的上表面覆有透明封装层（160）。本技术方案，其可有效解决现有COB封装的LED显示屏的吸潮问题及墨色一致性问题。

Description

一种LED显示屏 技术领域
本发明涉及LED显示屏封装技术领域，特别涉及一种LED显示屏。
 背景技术
Mini LED发光芯片的量产推动了LED显示屏往P1.0以下发展，同时也推动了COB集成封装技术的发展。COB集成封装技术通过一次性整体封装的方案，能够实现LED显示屏更高的发光密度、可靠性和更低的封装成本。但是集成封装方案的LED显示单元仍然面临不同显示模组表面的墨色一致性问题以及封装层吸潮的问题。
 技术问题
本发明的主要目的在于提出一种 LED显示屏，其旨在解决现有COB封装的LED显示屏的吸潮问题及墨色一致性问题。
 技术解决方案
为实现上述目的，本发明提供了一种LED显示屏，所述LED显示屏包括PCB基板以及均匀分布在所述PCB基板的正面上的若干LED发光芯片组件，所述PCB基板的正面及所述若干LED发光芯片组件的外表面均覆有防潮纳米膜层，两两所述LED发光芯片组件之间形成的灯缝覆有黑色油墨层，所述LED发光芯片组件的上表面还覆有光扩散层，且所述黑色油墨层及所述光扩散层均位于所述防潮纳米膜层之上，所述黑色油墨层及所述光扩散层的上表面覆有透明封装层。
 有益效果
本发明提供的LED显示屏，通过在LED发光芯片组件的外表面与透明封装层之间增加一层防潮纳米膜层，能够有效避免出现水汽进入LED发光芯片电路导致产生电化学迁移等现象、造成发光芯片短路及金线断裂的问题，同时在灯缝上增加黑色油墨层，能够有效提高LED显示屏的对比度，且在LED发光芯片组件的上表面增加一层光扩散层，能够有效改善LED芯片的出光效果，减弱摩尔纹问题。可见，本技术方案，其可有效解决现有COB封装的LED显示屏的吸潮问题及墨色一致性问题。
 附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动性的前提下，还可以根据这些附图获得其他的附图。
图1为本发明实施例LED显示屏的结构示意图。
 本发明的实施方式
下面结合附图对本发明的具体实施方式作进一步说明。在此需要说明的是，对于这些实施方式的说明用于帮助理解本发明，但并不构成对本发明的限定。此外，下面所描述的本发明各个实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互组合。
如图1所示，本发明实施例提供一种LED显示屏100，LED显示屏100包括PCB基板110以及均匀分布在PCB基板110的正面上的若干LED发光芯片组件120，PCB基板110的正面及若干LED发光芯片组件120的外表面均覆有防潮纳米膜层130，两两LED发光芯片组件120之间形成的灯缝覆有黑色油墨层140， LED发光芯片组件120的上表面还覆有光扩散层150，且黑色油墨层140及光扩散层150均位于防潮纳米膜层130之上，黑色油墨层140及光扩散层150的上表面覆有透明封装层160。
在本实施例中，如图1所示，PCB基板110优选为FR-4基材板。LED发光芯片组件120包括红色Mini LED发光芯片、绿色Mini LED发光芯片以及蓝色Mini LED发光芯片，红色Mini LED发光芯片、绿色Mini LED发光芯片以及蓝色Mini LED发光芯片呈一字型或品字型排列，并通过固晶焊线结构贴合在PCB基板110的正面。防潮纳米膜层130包括氧化硅层、氧化钛层、氧化铝层、氮化硅层、氟硅烷层、氧硅烷层、聚氨酯层、改性酚醛树脂层、改性有机硅树脂层、聚酰胺层中的任意一种或任意几种，防潮纳米膜层130的厚度优选为0.5µm-10µm，通过这样设置的防潮纳米膜层130，可更好地避免出现水汽进入Mini LED发光芯片电路导致产生电化学迁移等现象、造成发光芯片短路及金线断裂的问题。
黑色油墨层140的上表面低于LED发光芯片组件120的上表面，黑色油墨层的厚度优选为10µm-50µm，能够更好地提高LED显示屏的对比度的同时，不影响LED发光芯片组件120的发光亮度。光扩散层150为掺杂光扩散剂的改性有机硅树脂层或者为掺杂光扩散剂的环氧树脂层，且掺杂比例为千分之一至千分之五，即改性有机硅树脂层或环氧树脂层掺杂有千分之一至千分之五的光扩散剂，光扩散层的厚度优选为5µm-20µm，以有效改善LED芯片的出光效果，减弱摩尔纹问题。
另外，如图1所示，透明封装层160优选为透明改性环氧树脂层，采用COB一体式封装工艺封装在LED显示屏100的灯面上，该透明改性环氧树脂层的封装工艺可以是模压方式、灌封机械加工方式、硅胶或环氧半固化片压合方式。PCB基板110的背面贴合有驱动IC元器件170，该驱动IC元器件170主要由SMD（Surface Mounted Devices，表面贴装器件）工艺贴合在PCB基板背面，以驱动若干LED发光芯片组件120工作。
以上结合附图对本发明的实施方式作了详细说明，但本发明不限于所描述的实施方式。对于本领域的技术人员而言，在不脱离本发明原理和精神的情况下，对这些实施方式进行多种变化、修改、替换和变型，仍落入本发明的保护范围内。
 工业实用性
本发明实施例中的LED显示屏，通过在LED发光芯片组件的外表面与透明封装层之间增加一层防潮纳米膜层，能够有效避免出现水汽进入LED发光芯片电路导致产生电化学迁移等现象、造成发光芯片短路及金线断裂的问题，同时在灯缝上增加黑色油墨层，能够有效提高LED显示屏的对比度，且在LED发光芯片组件的上表面增加一层光扩散层，能够有效改善LED芯片的出光效果，减弱摩尔纹问题。从而有效解决现有COB封装的LED显示屏的吸潮问题及墨色一致性问题。因此，具有工业实用性。

Claims (14)

  1. 一种LED显示屏，包括PCB基板以及均匀分布在所述PCB基板的正面上的若干LED发光芯片组件，所述PCB基板的正面及所述若干LED发光芯片组件的外表面均覆有防潮纳米膜层，两两所述LED发光芯片组件之间形成的灯缝覆有黑色油墨层，所述LED发光芯片组件的上表面还覆有光扩散层，且所述黑色油墨层及所述光扩散层均位于所述防潮纳米膜层之上，所述黑色油墨层及所述光扩散层的上表面覆有透明封装层。
  2. 根据权利要求1所述的LED显示屏，其中，所述LED发光芯片组件包括红色Mini LED发光芯片、绿色Mini LED发光芯片以及蓝色Mini LED发光芯片， 所述红色Mini LED发光芯片、所述绿色Mini LED发光芯片以及所述蓝色Mini LED发光芯片呈一字型或品字型排列，并通过固晶焊线结构贴合在所述PCB基板的正面。
  3. 根据权利要求1所述的LED显示屏，其中，所述防潮纳米膜层包括氧化硅层、氧化钛层、氧化铝层、氮化硅层、氟硅烷层、氧硅烷层、聚氨酯层、改性酚醛树脂层、改性有机硅树脂层、聚酰胺层中的任意一种或任意几种。
  4. 根据权利要求1所述的LED显示屏，其中，所述防潮纳米膜层的厚度为0.5µm-10µm。
  5. 根据权利要求1所述的LED显示屏，其中，所述黑色油墨层的上表面低于所述LED发光芯片组件的上表面。
  6. 根据权利要求1所述的LED显示屏，其中，所述黑色油墨层的厚度为10µm-50µm。
  7. 根据权利要求1所述的LED显示屏，其中，所述光扩散层为掺杂光扩散剂的改性有机硅树脂层或者为掺杂光扩散剂的环氧树脂层，且掺杂比例为千分之一至千分之五。
  8. 根据权利要求1所述的LED显示屏，其中，所述光扩散层的厚度为5µm-20µm。
  9. 根据权利要求1所述的LED显示屏，其中，所述透明封装层为透明改性环氧树脂层。
  10. 根据权利要求1所述的LED显示屏，其中，所述PCB基板的背面贴合有驱动IC元器件。
  11. 根据权利要求10所述的LED显示屏，其中，所述LED发光芯片组件包括红色Mini LED发光芯片、绿色Mini LED发光芯片以及蓝色Mini LED发光芯片， 所述红色Mini LED发光芯片、所述绿色Mini LED发光芯片以及所述蓝色Mini LED发光芯片呈一字型或品字型排列，并通过固晶焊线结构贴合在所述PCB基板的正面。
  12. 根据权利要求10所述的LED显示屏，其中，所述防潮纳米膜层包括氧化硅层、氧化钛层、氧化铝层、氮化硅层、氟硅烷层、氧硅烷层、聚氨酯层、改性酚醛树脂层、改性有机硅树脂层、聚酰胺层中的任意一种或任意几种。
  13. 根据权利要求10所述的LED显示屏，其中，所述光扩散层为掺杂光扩散剂的改性有机硅树脂层或者为掺杂光扩散剂的环氧树脂层，且掺杂比例为千分之一至千分之五。
  14. 根据权利要求10所述的LED显示屏，其中，所述透明封装层为透明改性环氧树脂层。
PCT/CN2021/099402 2020-07-09 2021-06-10 一种led显示屏 WO2022007584A1 (zh)

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