TWI408836B - 發光二極體裝置 - Google Patents

發光二極體裝置 Download PDF

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Publication number
TWI408836B
TWI408836B TW099122183A TW99122183A TWI408836B TW I408836 B TWI408836 B TW I408836B TW 099122183 A TW099122183 A TW 099122183A TW 99122183 A TW99122183 A TW 99122183A TW I408836 B TWI408836 B TW I408836B
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light
circuit board
emitting diode
light emitting
top wall
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TW099122183A
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TW201203615A (en
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賴光柱
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良盟塑膠股份有限公司
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Priority to TW099122183A priority Critical patent/TWI408836B/zh
Priority to US13/040,964 priority patent/US8342703B2/en
Publication of TW201203615A publication Critical patent/TW201203615A/zh
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21SNON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
    • F21S8/00Lighting devices intended for fixed installation
    • F21S8/08Lighting devices intended for fixed installation with a standard
    • F21S8/085Lighting devices intended for fixed installation with a standard of high-built type, e.g. street light
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V29/00Protecting lighting devices from thermal damage; Cooling or heating arrangements specially adapted for lighting devices or systems
    • F21V29/50Cooling arrangements
    • F21V29/70Cooling arrangements characterised by passive heat-dissipating elements, e.g. heat-sinks
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21VFUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
    • F21V9/00Elements for modifying spectral properties, polarisation or intensity of the light emitted, e.g. filters
    • F21V9/30Elements containing photoluminescent material distinct from or spaced from the light source
    • F21V9/32Elements containing photoluminescent material distinct from or spaced from the light source characterised by the arrangement of the photoluminescent material
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21WINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO USES OR APPLICATIONS OF LIGHTING DEVICES OR SYSTEMS
    • F21W2111/00Use or application of lighting devices or systems for signalling, marking or indicating, not provided for in codes F21W2102/00 – F21W2107/00
    • F21W2111/02Use or application of lighting devices or systems for signalling, marking or indicating, not provided for in codes F21W2102/00 – F21W2107/00 for roads, paths or the like
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2105/00Planar light sources
    • F21Y2105/10Planar light sources comprising a two-dimensional array of point-like light-generating elements
    • FMECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21LIGHTING
    • F21YINDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
    • F21Y2115/00Light-generating elements of semiconductor light sources
    • F21Y2115/10Light-emitting diodes [LED]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50Wavelength conversion elements
    • H01L33/507Wavelength conversion elements the elements being in intimate contact with parts other than the semiconductor body or integrated with parts other than the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements

Description

發光二極體裝置
本發明有關一種照明裝置,尤其有關一種發光二極體作為光源的發光二極體裝置。
由於發光二極體具有節能的優勢,在許多照明用途上,已逐漸地取代各式的傳統燈炮作為新一代的光源。目前來說,不論在各種室內或室外用燈上,皆已看到應用發光二極體作為照明光源的實例。
作為照明主力的白光發光二極體元件,其封裝過程大多是先在基座上安置發光晶片,並在發光晶片的表面上形成可轉換光線波長的螢光層,然後在螢光層以及發光晶片上覆蓋液態封裝材料,並對液態封裝材料進行固化,以將螢光層以及發光晶片封裝起來。並且,在封裝材料上會形成具有特定曲率的透鏡形狀,藉此可控制發光晶片的光線發散角度。
傳統上,螢光層的製作大多採用以點膠、或塗佈的方式將液態的螢光膠覆蓋於發光晶片的頂面以及側面上,然後再將液態螢光膠固化而成。然而,液態的螢光膠表面會受到表面張力的作用而形成弧狀,難以在發光晶片的頂面以及側面上形成均一的厚度,導致發光二極體無法在各個方向上發出光色均勻的白光。
此外,由於單顆封裝好的發光二極體元件所能提供的亮度有限,必須依據實際所需的照明亮度,將多顆封裝好的發光二極體元件共同安裝於一電路 板上,方可提供足夠的照明亮度。然而,為了外型美觀,避免電路板上的線路或電子元件外露,通常會以一透光外罩裝設在電路板上並蓋住線路及電子元件,但實際應用時,透光外罩會至少部分地吸收或反射發光二極體元件所發出之光線,導致光線使用率降低,此外,還會增加製造成本。
有鑑於此,本發明之目的在於提供一種發光二極體裝置,可有效地克服液態螢光膠表面受到的表面張力作用,並可在結構上省去透光外罩,有效簡化結構。
為達上述目的,本發明之發光二極體裝置,包含一電路板、至少一發光二極體晶片、一透鏡罩,以及一螢光層。發光二極體晶片設置於該電路板上。透鏡罩具有一環繞設置於該電路板之周緣的周壁、一位於該周壁之頂緣的頂壁,以及一由該頂壁朝該發光二極體晶片延伸的導光柱。該導光柱具有一形成有一凹部的端面。該端面之外緣頂抵於該電路板,該凹部則對應容置該發光二極體晶片。螢光層設置於該凹部與該發光二極體晶片之間。
本發明藉由該導光柱之凹部搭配該發光二極體晶片共同限制該螢光層的形狀,使螢光層在厚度上達到一致,以使白光光色均勻。並藉由一體成型的該透鏡罩,以其周壁及頂壁對該電路板進行封裝,避免電路板外露,更以其導光柱對各該發光二極體晶片進行封裝,毋需額外的透光外罩,在結構上較習知技術而言大幅簡化。
10‧‧‧電路板
11‧‧‧定位孔
12‧‧‧金屬底板
13‧‧‧絕緣層
14‧‧‧電路圖案
20‧‧‧發光二極體晶片
30‧‧‧透鏡罩
31‧‧‧周壁
32‧‧‧頂壁
33‧‧‧導光柱
331‧‧‧端面
332‧‧‧凹部
34‧‧‧定位柱
35‧‧‧弧狀凸部
36‧‧‧插孔
40‧‧‧螢光層
50‧‧‧矽膠層
第一圖為本發明發光二極體裝置之立體圖;第二圖為本發明發光二極體裝置之局部分解圖;以及第三圖為本發明發光二極體裝置之剖視圖。
有關本發明之技術內容、詳細說明,以及功效,現配合圖式說明如下:如第一圖及第二圖所示,本發明的發光二極體裝置主要包含一電路板10、複數個發光二極體晶片20、一透鏡罩30,以及複數個螢光層40。
該電路板10大致為一矩形,其具有複數個分散在其上表面的定位孔11。該電路板30具有一可幫助發光二極體晶片20散熱的金屬底板12,一覆蓋於該金屬底板12上的絕緣層13,以及設置於該絕緣層13上的電路圖案14。該定位孔11的數量不以圖示為限,實際實施時為至少一個即可。
該等發光二極體晶片20彼此間隔地設置於該電路板10上,並與電路圖案14電連接,在本實施例中,該電路圖案14係以串聯方式電連接該等發光二極體晶片20,實際實施則不以此串聯方式為限。此外,發光二極體晶片20的數量亦不以圖示為限,實際實施時為至少一個即可。
如第二圖及第三圖所示,該透鏡罩30具有一環繞設置於該電路板10之周緣的周壁31、一位於該周壁31之頂緣的頂壁32、複數個由該頂壁32分別朝各該發光二極體晶片20延伸的導光柱33,以及一由該頂壁32延伸並緊配合地嵌設於該定位孔11內的定位柱34。
該導光柱33具有一形成有一凹部332的端面331,該端面331之外緣頂抵於該電路板10,該凹部332則對應容置該發光二極體晶片20。值得注意的是,該導光柱33之直徑由該頂壁部32朝該端面331呈現由大漸小的變化,藉以使該發光二極體晶片20側向所發出之大角度光線可向光軸收斂,以提高出光效率。導光柱33的數量亦不以圖示為限,實際實施時其數量對應該發光二極體晶片20,為至少一個即可。
此外,該頂壁32更具有一位於該導光柱33的相反側並用以匯聚光線的弧狀 凸部35,亦用收斂光線,提高出光效率。另外,為了方便該電路板10與外部電路電連接,該透鏡罩30形成有至少一插孔36。
需特別說明的是,該透鏡罩30之該周壁31、該頂壁32、該導光柱33,以及該定位柱34係由塑膠材質一體射出成型,藉此,可將元件數量減少,達到節省成本及縮短組裝時間的功效。
該等螢光層40用以轉換部分發光二極體晶片20所發出之光線以形成白光。該等螢光層40分別設置於各該凹部332與各該對應的發光二極體晶片20之間。此外,各該螢光層40與各該發光二極體晶片20之間,更具有一用以黏著該螢光層40與各該發光二極體晶片20的矽膠層50。
藉此,該螢光層40的形狀受到該凹部332以及該發光二極體晶片20的限制,可在厚度上達到一致,以使白光光色均勻。不會如習知之液態螢光層表面會受到表面張力作用而形成弧狀,而導致白光光色不均的情形發生。
綜上所述,本發明之發光二極體裝置,藉由該導光柱33之凹部332搭配該發光二極體晶片20共同限制該螢光層40的形狀,可使螢光層40在厚度上達到一致,以使白光光色均勻。
此外,更藉由一體成型的該透鏡罩30,不僅以其周壁31及頂壁32對該電路板10進行封裝,避免電路板10上的線路或電子元件外露,更以其導光柱33對各該發光二極體晶片20進行封裝,毋需額外的透光外罩,在結構上較習知技術而言大幅簡化,確實達成本發明之功效。
惟以上所述者僅為本發明之較佳實施例,並非用以限定本發明之實施範圍。凡依本發明申請專利範圍所作之等效變化與修飾,皆仍屬本發明專利所涵蓋範圍之內。
10‧‧‧電路板
20‧‧‧發光二極體晶片
30‧‧‧透鏡罩
31‧‧‧周壁
32‧‧‧頂壁
33‧‧‧導光柱
34‧‧‧定位柱
35‧‧‧弧狀凸部
40‧‧‧螢光層
50‧‧‧矽膠層

Claims (7)

  1. 一種發光二極體裝置,包含:一電路板;至少一發光二極體晶片,設置於該電路板上;一透鏡罩,具有一環繞設置於該電路板之周緣的周壁,一位於該周壁之頂緣的頂壁,以及一由該頂壁朝該發光二極體晶片延伸的導光柱,該導光柱具有一形成有一凹部的端面,該端面之外緣頂抵於該電路板,該凹部則對應容置該發光二極體晶片,其中該透鏡罩之形成有至少一供外部電路與該電路板連接的插孔;以及一螢光層,設置於該凹部與該發光二極體晶片之間。
  2. 如申請專利範圍第1項所述之發光二極體裝置,其中,該導光柱之直徑由該頂壁部朝該端面呈現由大漸小的變化。
  3. 如申請專利範圍第1項所述之發光二極體裝置,其中,該頂壁更具有一位於該導光柱的相反側並用以匯聚光線的凸部。
  4. 如申請專利範圍第3項所述之發光二極體裝置的製作方法,其中該透鏡罩之該周壁、該頂壁、該導光柱、該定位柱,以及該凸部係一體成型。
  5. 如申請專利範圍第1項所述之發光二極體裝置,更包含一位於該螢光層與該發光二極體晶片之間的矽膠層。
  6. 如申請專利範圍第1項所述之發光二極體裝置,其中該電路板具有一金屬底板,一覆蓋於該金屬底板上的絕緣層,以及設置於該絕緣層上的電路圖案。
  7. 如申請專利範圍第1項所述之發光二極體裝置,其中該電路板具有至少一定位孔,且該透鏡罩更具有一由該頂壁延伸並緊配合地嵌設於該定位孔 內的定位柱。
TW099122183A 2010-07-06 2010-07-06 發光二極體裝置 TWI408836B (zh)

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US13/040,964 US8342703B2 (en) 2010-07-06 2011-03-04 Light emitting apparatus

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