WO2022001983A1 - 陶瓷覆铜板及制备陶瓷覆铜板的方法 - Google Patents

陶瓷覆铜板及制备陶瓷覆铜板的方法 Download PDF

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WO2022001983A1
WO2022001983A1 PCT/CN2021/102841 CN2021102841W WO2022001983A1 WO 2022001983 A1 WO2022001983 A1 WO 2022001983A1 CN 2021102841 W CN2021102841 W CN 2021102841W WO 2022001983 A1 WO2022001983 A1 WO 2022001983A1
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Prior art keywords
copper
ceramic
clad laminate
oxide layer
copper material
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PCT/CN2021/102841
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English (en)
French (fr)
Inventor
周维
徐强
谢偲偲
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比亚迪股份有限公司
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Application filed by 比亚迪股份有限公司 filed Critical 比亚迪股份有限公司
Priority to JP2023500002A priority Critical patent/JP2023534163A/ja
Priority to US18/003,866 priority patent/US20230269879A1/en
Priority to EP21831763.4A priority patent/EP4175425A4/en
Priority to KR1020237002863A priority patent/KR20230027290A/ko
Publication of WO2022001983A1 publication Critical patent/WO2022001983A1/zh

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/022—Processes for manufacturing precursors of printed circuits, i.e. copper-clad substrates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/38—Improvement of the adhesion between the insulating substrate and the metal
    • H05K3/382—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal
    • H05K3/385—Improvement of the adhesion between the insulating substrate and the metal by special treatment of the metal by conversion of the surface of the metal, e.g. by oxidation, whether or not followed by reaction or removal of the converted layer
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/122—Metallic interlayers based on refractory metals
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C04B2237/126—Metallic interlayers wherein the active component for bonding is not the largest fraction of the interlayer
    • C04B2237/127—The active component for bonding being a refractory metal
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/40—Metallic
    • C04B2237/407—Copper
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
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    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/52—Pre-treatment of the joining surfaces, e.g. cleaning, machining
    • C04B2237/525—Pre-treatment of the joining surfaces, e.g. cleaning, machining by heating
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/54—Oxidising the surface before joining
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C22/00—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals
    • C23C22/05—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions
    • C23C22/06—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6
    • C23C22/48—Chemical surface treatment of metallic material by reaction of the surface with a reactive liquid, leaving reaction products of surface material in the coating, e.g. conversion coatings, passivation of metals using aqueous solutions using aqueous acidic solutions with pH less than 6 not containing phosphates, hexavalent chromium compounds, fluorides or complex fluorides, molybdates, tungstates, vanadates or oxalates
    • C23C22/52—Treatment of copper or alloys based thereon
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/07—Treatments involving liquids, e.g. plating, rinsing
    • H05K2203/0779—Treatments involving liquids, e.g. plating, rinsing characterised by the specific liquids involved
    • H05K2203/0786—Using an aqueous solution, e.g. for cleaning or during drilling of holes
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/11—Treatments characterised by their effect, e.g. heating, cooling, roughening
    • H05K2203/1105—Heating or thermal processing not related to soldering, firing, curing or laminating, e.g. for shaping the substrate or during finish plating

Definitions

  • the application relates to the technical field of ceramic copper clad laminates, in particular to a ceramic copper clad laminate and a method for preparing the ceramic copper clad laminate.
  • Ceramic CCL refers to a special process board that is metallized on the surface of a ceramic substrate. Among them, alumina ceramic CCL with low thermal conductivity is gradually difficult to meet packaging requirements, while on nitride ceramic substrates such as aluminum nitride with high thermal conductivity Copper cladding is more suitable for the manufacture of high-power electronic modules.
  • nitride ceramics cannot be metallized by Direct Bonding Copper (DBC). Active metal solder is used to weld copper and nitride ceramics together to form nitride ceramic copper clad laminates for packaging.
  • DBC Direct Bonding Copper
  • the AMB process is generally carried out under a high vacuum condition of 750-1000 ° C, but during this process, the copper material will grow rapidly due to secondary crystallization. Large copper grains will affect the recognition of the circuit pattern (copper layer) on the ceramic copper-clad substrate by the subsequent charge-coupled device (CCD), which in turn affects automated packaging such as chip bonding and wire bonding. Therefore, in the AMB process, it is very important to control the growth of the crystal grains of the copper material.
  • the present application provides a method for preparing a ceramic copper clad laminate.
  • the copper crystal grain size of the ceramic copper clad laminate obtained by the method is suitable and has a high CCD recognition rate.
  • a first aspect of the present application provides a method for preparing a ceramic copper clad laminate, comprising the following steps: providing a copper material; chemically oxidizing the copper material to form a copper oxide layer on the surface of the copper material; The copper material after chemical oxidation treatment is heat-treated to diffuse oxygen atoms in the copper material; the copper oxide layer on the heat-treated copper material is removed; the copper material and the ceramic substrate after removing the copper oxide layer are removed Soldering is performed to obtain a ceramic copper clad laminate.
  • the copper material is chemically oxidized to form a copper oxide layer on the surface of the copper material, and then the chemically oxidized copper material is heat-treated to diffuse the copper material inside the copper material. Oxygen atoms; then the copper oxide layer is removed to obtain copper material with oxygen atoms diffused, and then the copper material with oxygen atoms diffused is welded to the ceramic substrate.
  • the oxygen atoms in the copper material can hinder the growth of copper grains and can The grain size of copper in the obtained ceramic copper clad laminate is controlled, and the ceramic copper clad laminate with high CCD recognition rate is obtained.
  • a method for preparing a ceramic copper clad laminate comprising the following steps: providing a copper material; forming a copper oxide layer on the surface of the copper material; heat treatment to diffuse oxygen atoms in the copper material; remove the copper oxide layer on the heat-treated copper material; and weld the copper material after removing the copper oxide layer to the ceramic substrate to obtain a ceramic copper clad laminate.
  • a copper oxide layer is formed on the surface of the copper material, and then the copper material on which the copper oxide layer is formed is heat-treated to diffuse oxygen atoms in the copper material; The copper oxide layer is removed to obtain a copper material with oxygen atoms diffused, and then the copper material with oxygen atoms diffused is welded to the ceramic substrate.
  • the oxygen atoms in the copper material can hinder the growth of copper crystal grains, which can make the obtained ceramic coating
  • the grain size of copper in the copper plate is controlled, and a ceramic copper clad plate with high CCD recognition rate is obtained.
  • a second aspect of the present application provides a ceramic copper clad laminate, which is prepared by using the above method for preparing a ceramic copper clad laminate. Therefore, the ceramic copper clad laminate has all the features and advantages of the preparation method of the ceramic copper clad laminate, which will not be repeated here.
  • a ceramic copper clad laminate is provided, and the ceramic copper clad laminate is prepared by using the above-mentioned method for preparing a ceramic copper clad laminate. Therefore, the ceramic copper clad laminate has all the features and advantages of the method for preparing the ceramic copper clad laminate, which will not be repeated here.
  • a third aspect of the present application provides a ceramic copper clad laminate, comprising a ceramic substrate, an active metal welding layer and a copper layer that are stacked in sequence, wherein the copper layer contains oxygen, and the mass of the oxygen accounts for the proportion of the copper layer 0.002-0.005% of mass.
  • the copper layer of the ceramic copper clad laminate contains the above content of oxygen, which can pin the copper crystal grains, improve the merging resistance of the interface between the copper crystal grains, and thus have a strong effect on the growth process of the secondary crystal grains. Inhibition to achieve the purpose of controlling the grain size, so that the ceramic copper clad laminate has a high CCD recognition rate.
  • a ceramic copper clad laminate which includes a ceramic substrate, an active metal welding layer and a copper layer that are stacked in sequence, wherein the copper layer contains oxygen element.
  • the copper layer of the ceramic copper clad laminate contains oxygen element, which can pin the copper grains, improve the merging resistance of the interface between the copper grains, and thus have a strong inhibitory effect on the growth of the secondary crystal grains. , to achieve the purpose of controlling the grain size, so that the ceramic copper clad laminate has a high CCD recognition rate.
  • the present application aims to solve one of the technical problems in the related art to a certain extent.
  • a first aspect of the present application provides a method for preparing a ceramic copper clad laminate, comprising the following steps: providing a copper material; chemically oxidizing the copper material to form a copper oxide layer on the surface of the copper material; The copper material after the chemical oxidation treatment is heat-treated to diffuse oxygen atoms in the copper material; the copper oxide layer on the heat-treated copper material is removed; the copper material after the removal of the copper oxide layer and the ceramic The substrate is welded to obtain a ceramic copper clad laminate.
  • the copper material is chemically oxidized to form a copper oxide layer on the surface of the copper material, and then the chemically oxidized copper material is heat-treated to diffuse the copper material inside the copper material.
  • the oxygen atoms in the copper material can hinder the growth of copper grains, which can The grain size of copper in the obtained ceramic copper clad laminate is controlled, and the ceramic copper clad laminate with high CCD recognition rate is obtained.
  • a method for preparing a ceramic copper clad laminate comprising the following steps: providing a copper material; forming a copper oxide layer on the surface of the copper material; heat treatment to diffuse oxygen atoms in the copper material; remove the copper oxide layer on the heat-treated copper material; and weld the copper material after removing the copper oxide layer to the ceramic substrate to obtain a ceramic copper clad laminate.
  • a copper oxide layer is formed on the surface of the copper material, and then the copper material on which the copper oxide layer is formed is heat-treated to diffuse oxygen atoms in the copper material; The copper oxide layer is removed to obtain a copper material with oxygen atoms diffused, and then the copper material with oxygen atoms diffused is welded to the ceramic substrate.
  • the oxygen atoms in the copper material can hinder the growth of copper crystal grains, which can make the obtained ceramic coating
  • the grain size of copper in the copper plate is controlled, and a ceramic copper clad plate with high CCD recognition rate is obtained.
  • the copper material before the chemical oxidation treatment is performed on the copper material, the copper material is also cleaned to remove oil stains, natural oxide layers, etc. on the surface of the copper material, which is conducive to copper oxidation during the chemical oxidation treatment. adhesion of the layer and increase the controllability of the copper oxide layer.
  • the reagent used in the cleaning treatment includes, but is not limited to, at least one of sodium hydroxide, sulfuric acid, sodium citrate, acetone, and ethanol.
  • the copper material includes raw materials in the form of copper sheets, copper foils, and the like.
  • the copper material is oxygen-free copper material.
  • forming the copper oxide layer includes chemically oxidizing the copper material.
  • the chemical oxidation treatment is carried out by at least one of the following methods: (1) using a mixed solution of hypochlorite and strong alkali to treat the copper material; (2) using a mixture of strong acid and hydrogen peroxide The copper material is treated with the solution; (3) the copper material is treated with a persulfate solution.
  • chemical oxidation treatment is performed on the copper material, and the chemical oxidation treatment is performed by at least one of the following methods:
  • the operation of the chemical oxidation treatment is simple, convenient, and easy to implement, and the copper oxide layer can be efficiently formed on the surface of the copper material.
  • the concentration of hypochlorite is 50-120g/L
  • the concentration of strong alkali is 10-40g/L
  • the oxidation temperature is 40-70°C
  • the oxidation temperature is 40-70°C.
  • the time is 10-30min.
  • the concentration of the strong acid is 30-130 g/L
  • the concentration of H 2 O 2 is 20-120 g/L
  • the oxidation temperature is 40-70° C.
  • the oxidation time is 10-30min.
  • the concentration of persulfate is 50-120 g/L
  • the oxidation temperature is 40-70° C.
  • the oxidation time is 10-30 min.
  • the hypochlorite may include sodium hypochlorite (NaClO 2 ) and/or potassium hypochlorite (KClO 2 );
  • the strong base may include potassium hydroxide (KOH) and/or sodium hydroxide (NaOH);
  • the strong acid may include sulfuric acid (H 2 SO 4 );
  • the persulfate may include sodium persulfate and/or potassium persulfate.
  • the thickness of the copper oxide layer is 0.5-3 ⁇ m. This thickness can ensure that the subsequent heat treatment can diffuse the oxygen in the copper oxide layer into the copper material, so that oxygen atoms exist at the interface (copper grain boundary) between the copper crystal grains in the copper material.
  • the material of the copper oxide layer includes at least one of copper oxide and cuprous oxide.
  • the copper material after the chemical oxidation treatment is subjected to heat treatment the temperature of the heat treatment is 400-900° C., and the time of the heat treatment is 5-100 min.
  • the temperature of the thermal oxidation treatment may be 400, 450, 500, 550, 600, 700, 800 or 900° C., and the time of the thermal oxidation treatment may be 5, 10, 20, 40, 60, 80, 90 or 100 minutes.
  • the oxygen in the copper oxide layer can be diffused into the copper grain boundaries of the copper material, and the resistance of the grain boundary merging can be improved through the pinning effect of oxygen atoms on the copper grains, thereby reducing the secondary crystal grains.
  • the growth process has a strong inhibitory effect to achieve the purpose of controlling the grain size. Specifically, the temperature of the heat treatment is 600-800° C., and the time of the heat treatment is 5-30 min.
  • the heat treatment is performed under vacuum or inert gas conditions.
  • the heat treatment can be carried out in any heating equipment capable of controlling the atmosphere content, such as vacuum furnaces, box furnaces, tunnel furnaces, rotary atmosphere furnaces, bell furnaces, chain furnaces, tube furnaces, shuttle furnaces furnace or push-plate kiln;
  • the inert gas is at least one of nitrogen, helium and argon.
  • the copper oxide layer on the heat-treated copper material is removed, which can prevent oxidation of the solder used for welding and affect the welding quality.
  • the removal of the copper oxide layer can be performed by pickling or grinding (eg, sanding, CMP chemical mechanical polishing (CMP) grinding).
  • pickling or grinding eg, sanding, CMP chemical mechanical polishing (CMP) grinding.
  • the method for removing the copper oxide layer is pickling.
  • the thermally oxidized copper material can be contacted with the acid solution used for a period of time, and then taken out, washed with water and dried for subsequent welding; Short (such as 2-10s), high removal efficiency, convenient operation, and very little loss of copper thickness.
  • the acid used for the pickling includes at least one of sulfuric acid, hydrochloric acid, and phosphoric acid.
  • the concentration of the acid solution used in the pickling may be below 10 wt %, for example, 1-10 wt %.
  • the mass of oxygen element accounts for 0.001-0.01% of the mass of the copper material. Therefore, the copper material contains the above-mentioned oxygen content, and through the pinning effect of oxygen atoms on the copper grains, the resistance of grain boundary merger can be improved, so as to have a strong inhibitory effect on the process of secondary crystal grain growth, and achieve The purpose of controlling grain size. Specifically, in the copper material after removing the copper oxide layer, the mass of oxygen element accounts for 0.002-0.005% of the quality of the copper material.
  • the copper material after removing the copper oxide layer is welded to the ceramic substrate.
  • the welding is active metal welding. Active metal welding is generally carried out in a high temperature and high vacuum environment. Untreated copper will become coarser due to secondary crystallization during this process.
  • the copper material is chemically oxidized, a copper oxide layer is formed on the surface of the copper material, and then the chemically oxidized copper material is heat-treated to make the copper material Oxygen atoms are diffused inside; then the copper oxide layer is removed before the copper material and the ceramic substrate are welded, so as not to affect the welding quality; during the welding process, the pinning effect of oxygen atoms in the copper material increases its grain boundary merger Therefore, the secondary crystallization of copper grains is suppressed, the grain size of the ceramic copper clad laminate is controlled in an appropriate range, the recognition rate of the CCD on the copper material is improved, and the bonding strength of the copper material and the ceramic substrate is improved.
  • the welding is active metal welding
  • the step of active metal welding includes: disposing active metal solder on the surface of the ceramic substrate; covering the copper material after removing the copper oxide layer on the on the active metal solder; welding in a vacuum environment to form a copper layer on the ceramic substrate to obtain a ceramic copper clad laminate
  • the method for disposing the active metal solder on the surface of the ceramic substrate includes: printing on the surface of the ceramic substrate Active metal solder.
  • the step of active metal welding includes: printing active metal solder on the surface of the ceramic substrate; covering the copper material after removing the copper oxide layer on the active metal solder; in a vacuum environment Then, welding is performed to form a copper layer on the ceramic substrate to obtain a ceramic copper clad laminate.
  • the crystal grains of copper on the side away from the ceramic substrate are 10-200 ⁇ m. It can not only avoid the adverse effect of excessively large copper grains on CCD positioning, improve the automatic recognition rate, and not affect the subsequent automatic packaging processes such as chip welding and wire bonding, but also avoid excessive copper grains affecting the welding layer and copper. Bonding strength; it can also avoid the problems of low copper plasticity and insufficient thermal stress release in ceramic copper clad laminates caused by too small copper grains.
  • the grain size of the copper on the side away from the ceramic substrate in the copper material is 10-200 ⁇ m.
  • the thickness of the ceramic substrate is 0.2-2 mm.
  • the ceramic substrate includes a nitride ceramic plate, an oxide ceramic plate or a boride ceramic plate. Specifically, the ceramic substrate is a nitride ceramic.
  • a second aspect of the present application further provides a ceramic copper clad laminate, which is prepared by using the preparation method of the ceramic copper clad laminate described in the first aspect of the present application. Therefore, the ceramic copper clad laminate has all the features and advantages of the preparation method of the ceramic copper clad laminate, which will not be repeated here.
  • a ceramic copper clad laminate is provided, and the ceramic copper clad laminate is prepared by using the above-mentioned method for preparing a ceramic copper clad laminate. Therefore, the ceramic copper clad laminate has all the features and advantages of the method for preparing the ceramic copper clad laminate, which will not be repeated here.
  • a third aspect of the present application provides a ceramic copper clad laminate, comprising a ceramic matrix, an active metal welding layer, and a copper layer that are stacked in sequence, wherein the copper layer contains oxygen, and the mass of the oxygen accounts for the proportion of the copper 0.002-0.005% of layer mass.
  • the copper layer of the ceramic copper clad laminate contains the above content of oxygen, which can pin the copper crystal grains, improve the merging resistance of the interface between the copper crystal grains, and thus have a strong effect on the growth process of the secondary crystal grains. Inhibition to achieve the purpose of controlling the grain size, so that the ceramic copper clad laminate has a high CCD recognition rate.
  • a ceramic copper clad laminate which includes a ceramic substrate, an active metal welding layer and a copper layer that are stacked in sequence, wherein the copper layer contains oxygen element.
  • the copper layer of the ceramic copper clad laminate contains oxygen element, which can pin the copper grains, improve the merging resistance of the interface between the copper grains, and thus have a strong inhibitory effect on the growth of the secondary crystal grains. , to achieve the purpose of controlling the grain size, so that the ceramic copper clad laminate has a high CCD recognition rate.
  • the mass of the oxygen element in the copper layer accounts for 0.002-0.005% of the mass of the copper layer.
  • the copper layer of the ceramic copper clad laminate contains the above content of oxygen, the copper crystal grains can be pinned, the merging resistance of the interface between the copper crystal grains can be improved, and the process of secondary crystal grain growth can be improved.
  • the strong inhibitory effect achieves the purpose of controlling the grain size, so that the ceramic copper clad laminate has a high CCD recognition rate.
  • the grain size of copper in the copper layer at least on the side away from the active metal solder layer is 10-200 ⁇ m. It can not only avoid the adverse effect of excessively large copper grains on CCD positioning, improve the automatic recognition rate, and not affect the subsequent automatic packaging processes such as chip welding and wire bonding, but also avoid excessive copper grains affecting the welding layer and copper. Bonding strength; it can also avoid the problems of low copper plasticity and insufficient thermal stress release in ceramic copper clad laminates caused by too small copper grains.
  • the grain size of copper in the copper layer on the side away from the active metal solder layer is 10-200 ⁇ m.
  • the ceramic matrix includes a nitride ceramic plate, an oxide ceramic plate, or a boride ceramic plate.
  • the ceramic substrate is a nitride ceramic.
  • a preparation method of a ceramic copper clad laminate comprising:
  • step (4) Active metal welding is performed between the copper sheet obtained in step (4) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is silk-screened on one surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • a preparation method of a ceramic copper clad laminate comprising:
  • step (4) Active metal welding is performed between the copper sheet obtained in step (4) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is silk-screened on one surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • step (4) Active metal welding is performed between the copper sheet obtained in step (4) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is silk-screened on one surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • a preparation method of a ceramic copper clad laminate comprising:
  • step (4) Active metal welding is performed between the copper sheet obtained in step (4) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is silk-screened on one surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • a preparation method of a ceramic copper clad laminate comprising:
  • step (4) Active metal welding is performed between the copper sheet obtained in step (4) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is silk-screened on one surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • a preparation method of a ceramic copper clad laminate comprising:
  • step (2) Active metal welding is performed between the copper sheet obtained in step (1) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is screen-printed on a surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • a preparation method of a ceramic copper clad laminate comprising:
  • step (3) Active metal welding is performed between the copper sheet obtained in step (3) and the silicon nitride ceramic substrate with a thickness of 0.32 mm, specifically, the active metal solder containing Ti is silk-screened on one surface of the aluminum nitride ceramic substrate, and the copper sheet is covered. On the active metal solder, solder at 850° C. in a vacuum environment to obtain a ceramic copper clad laminate.
  • Grain size Observe the size of the copper grains in the copper layer of the ceramic CCL through a crystal phase microscope.
  • the specific method for calculating the grain size is the cross-section method. Samples are taken from multiple places on the copper surface, and a straight line of a certain length is drawn on it. The number of grains passing through the scribe line is counted, and the grain size is obtained by dividing the number of grains by the length of the scribe line.
  • Test results Test the performance of the ceramic copper clad laminates of Examples 1-5 and Comparative Examples 1-2 respectively, and the test results are shown in Table 1:

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Abstract

提出了一种制备陶瓷覆铜板的方法，包括以下步骤：提供铜材；在铜材表面形成铜氧化物层；对形成有铜氧化物层的铜材进行热处理，以使铜材内扩散有氧原子；去除热处理后的铜材上的铜氧化物层；将去除铜氧化物层后的铜材与陶瓷基板进行焊接，得到陶瓷覆铜板。

Description

陶瓷覆铜板及制备陶瓷覆铜板的方法
相关申请的交叉引用
本申请请求2020年6月29日向中国国家知识产权局提交的、专利申请号为202010605357.8的专利申请的优先权和权益，并且通过参照将其全文并入此处。
技术领域
本申请涉及陶瓷覆铜板技术领域，具体涉及一种陶瓷覆铜板及制备陶瓷覆铜板的方法。
背景技术
在电力电子领域中，功率模块所产生的热量主要是通过陶瓷覆铜板传导到外壳而散发到外界，因此陶瓷覆铜板是功率模块封装不可或缺的关键材料。陶瓷覆铜板是指在陶瓷基板表面进行金属化的特殊工艺板，其中，导热率较低的氧化铝陶瓷覆铜板渐渐难以满足封装要求，而在高导热性的氮化铝等氮化物陶瓷基板上覆铜更适合大功率电子模块的制造。
不同于氧化铝陶瓷，氮化物陶瓷不能通过直接铜结合技术(Direct Bonding Copper，DBC)进行金属化，其常通过活性金属焊接工艺(Active Metal Brazing，AMB)来实现与铜片的结合，主要通过活性金属焊料来将铜材与氮化物陶瓷焊接在一起，制成封装用的氮化物陶瓷覆铜板。
其中，为了避免活性金属焊料的氧化，AMB工艺一般是在750-1000℃的高真空条件下进行，但在该工艺过程中，铜材会由于二次结晶而导致铜晶粒迅速长大，过大的铜晶粒会影响后续电荷耦合器件(CCD)对陶瓷覆铜基板上电路图案(铜层)的识别，进而影响芯片焊接、绑线等自动化封装。因此，在AMB工艺下，控制铜材的晶粒的长大非常重要。
申请内容
为解决上述技术问题，本申请提供一种制备陶瓷覆铜板的方法，该方法得到的陶瓷覆铜板的铜晶粒尺寸合适，具有较高的CCD识别率。
本申请第一方面，提供一种陶瓷覆铜板的制备方法，包括以下步骤：提供铜材；对所述铜材进行化学氧化处理，以在所述铜材表面形成铜氧化物层；对所述化学氧化处理后的铜材进行热处理，以使所述铜材内扩散有氧原子；去除所述热处理后的铜材上的铜氧化物层；将去除铜氧化物层后的铜材与陶瓷基板进行焊接，得到陶瓷覆铜板。
本申请在将铜材与陶瓷基板进行焊接之前，通过对铜材进行化学氧化处理，在铜材表面形成铜氧化物层，然后对化学氧化处理后的铜材进行热处理，使铜材内扩散有氧原子； 之后将该铜氧化层去除，得到扩散有氧原子的铜材，再将扩散有氧原子的铜材与陶瓷基板的焊接，铜材内的氧原子能够阻碍铜晶粒的生长，可使得到的陶瓷覆铜板中铜的晶粒尺寸得到控制，得到CCD识别率高的陶瓷覆铜板。
在本申请的一个方面，提供一种制备陶瓷覆铜板的方法，包括以下步骤：提供铜材；在所述铜材表面形成铜氧化物层；对形成有所述铜氧化物层的铜材进行热处理，以使所述铜材内扩散有氧原子；去除所述热处理后的铜材上的铜氧化物层；将去除铜氧化物层后的铜材与陶瓷基板进行焊接，得到陶瓷覆铜板。本申请在将铜材与陶瓷基板进行焊接之前，在铜材表面形成铜氧化物层，然后对形成有所述铜氧化物层的铜材进行热处理，使铜材内扩散有氧原子；之后将该铜氧化层去除，得到扩散有氧原子的铜材，再将扩散有氧原子的铜材与陶瓷基板的焊接，铜材内的氧原子能够阻碍铜晶粒的生长，可使得到的陶瓷覆铜板中铜的晶粒尺寸得到控制，得到CCD识别率高的陶瓷覆铜板。
本申请第二方面提供一种陶瓷覆铜板，该陶瓷覆铜板采用上述陶瓷覆铜板的制备方法制备得到。由此，该陶瓷覆铜板具有陶瓷覆铜板的制备方法的全部特征和优点，在此不再一一赘述。
在本申请的又一个方面，提供一种陶瓷覆铜板，该陶瓷覆铜板采用上述制备陶瓷覆铜板的方法制备得到。由此，该陶瓷覆铜板具有制备陶瓷覆铜板的方法的全部特征和优点，在此不再一一赘述。
本申请第三方面提供一种陶瓷覆铜板，包括依次层叠设置的陶瓷基体、活性金属焊接层和铜层，其中，所述铜层中含有氧元素，所述氧元素的质量占所述铜层质量的0.002-0.005％。该陶瓷覆铜板的铜层中含有上述含量的氧，能够对铜晶粒起到钉扎作用，提高铜晶粒之间界面的合并阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的，使得陶瓷覆铜板具有较高的CCD识别率。
在本申请的又一个方面，提供一种陶瓷覆铜板，包括依次层叠设置的陶瓷基板、活性金属焊接层和铜层，其中，所述铜层中含有氧元素。该陶瓷覆铜板的铜层中含有氧元素，能够对铜晶粒起到钉扎作用，提高铜晶粒之间界面的合并阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的，使得陶瓷覆铜板具有较高的CCD识别率。
具体实施方式
下面详细描述本申请的实施例，所述实施例的示例在附图中示出，其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描 述的实施例是示例性的，仅用于解释本申请，而不能理解为对本申请的限制。
本申请旨在一定程度上解决相关技术中的技术问题之一。
为了使本申请所解决的技术问题、技术方案及有益效果更加清楚明白，以下结合实施例，对本申请进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本申请，并不用于限定本申请。
本申请的第一方面，提供一种陶瓷覆铜板的制备方法，包括以下步骤：提供铜材；对所述铜材进行化学氧化处理，以在所述铜材表面形成铜氧化物层；对所述化学氧化处理后的铜材进行热处理，以使所述铜材内扩散有氧原子；去除所述热处理后的铜材上的铜氧化物层；将去除铜氧化物层后的铜材与陶瓷基板进行焊接，得到陶瓷覆铜板。本申请在将铜材与陶瓷基板进行焊接之前，通过对铜材进行化学氧化处理，在铜材表面形成铜氧化物层，然后对化学氧化处理后的铜材进行热处理，使铜材内扩散有氧原子；之后将该铜氧化层去除，得到扩散有氧原子的铜材，再将扩散有氧原子的铜材与陶瓷基板的焊接，铜材内的氧原子能够阻碍铜晶粒的生长，可使得到的陶瓷覆铜板中铜的晶粒尺寸得到控制，得到CCD识别率高的陶瓷覆铜板。
在本申请的一个方面，提供一种制备陶瓷覆铜板的方法，包括以下步骤：提供铜材；在所述铜材表面形成铜氧化物层；对形成有所述铜氧化物层的铜材进行热处理，以使所述铜材内扩散有氧原子；去除所述热处理后的铜材上的铜氧化物层；将去除铜氧化物层后的铜材与陶瓷基板进行焊接，得到陶瓷覆铜板。本申请在将铜材与陶瓷基板进行焊接之前，在铜材表面形成铜氧化物层，然后对形成有所述铜氧化物层的铜材进行热处理，使铜材内扩散有氧原子；之后将该铜氧化层去除，得到扩散有氧原子的铜材，再将扩散有氧原子的铜材与陶瓷基板的焊接，铜材内的氧原子能够阻碍铜晶粒的生长，可使得到的陶瓷覆铜板中铜的晶粒尺寸得到控制，得到CCD识别率高的陶瓷覆铜板。
在本申请的一些实施例中，对所述铜材进行化学氧化处理前，还包括对铜材进行清洗处理，以除去铜材表面的油污、自然氧化层等，有利于化学氧化处理时铜氧化物层的附着及增加该铜氧化物层的可控性。
具体地，所述清洗处理采用的试剂包括但不局限于氢氧化钠、硫酸、柠檬酸钠、丙酮、乙醇中的至少一种。具体地，所述铜材包括铜片、铜箔等形式的原材料。具体地，所述铜材为无氧铜材。
在本申请的一些实施例中，形成所述铜氧化层包括对所述铜材进行化学氧化处理。具体地，所述化学氧化处理是通过以下至少之一的方法进行的：(1)采用次氯酸盐和强碱的混合液对所述铜材进行处理；(2)采用强酸和双氧水的混合溶液对所述铜材进行处理；(3) 采用过硫酸盐溶液对所述铜材进行处理。
在本申请的一些实施例中，对所述铜材进行化学氧化处理，所述化学氧化处理是通过以下至少之一的方法进行的：
(1)在30-100℃条件下，采用包含10-200g/L的次氯酸盐和10-100g/L的强碱的氧化液氧化5-100min；
(2)在30-80℃条件下，采用包含10-200g/L的强酸和10-150g/L的H 2O 2的氧化液氧化5-40min；
(3)在30-80℃，PH＜4条件下，采用包含30-150g/L过硫酸盐氧化液氧化5-40min。
由此，该化学氧化处理的操作简单、方便，易于实现，且可以高效的在铜材表面形成铜氧化物层。
采用包含次氯酸盐和强碱的氧化液时，具体地，次氯酸盐的浓度为50-120g/L，强碱的浓度为10-40g/L，氧化温度为40-70℃，氧化时间为10-30min。
采用包含强酸和H 2O 2的氧化液时，具体地，强酸的浓度为30-130g/L，H 2O 2的浓度为20-120g/L，氧化温度为40-70℃，氧化时间为10-30min。
采用包含过硫酸盐的氧化液时，具体地，过硫酸盐的浓度为50-120g/L，氧化温度为40-70℃，氧化时间为10-30min。
在本申请的一些实施例中，所述次氯酸盐可以包括次氯酸钠(NaClO 2)和/或次氯酸钾(KClO 2)；所述强碱可以包括氢氧化钾(KOH)和/或氢氧化钠(NaOH)；所述强酸可以包括硫酸(H 2SO 4)；过硫酸盐可以包括过硫酸钠和/或过硫酸钾。
在本申请的一些实施例中，所述铜氧化物层的厚度为0.5-3μm。该厚度可以保证后续热处理能够将铜氧化物层中的氧扩散至铜材内，使铜材中铜晶粒之间的界面(铜晶界)处存在氧原子。具体地，所述铜氧化层的材质包括氧化铜和氧化亚铜中的至少一种。
在本申请的一些实施例中，对所述化学氧化处理后的铜材进行热处理，所述热处理的温度为400-900℃，所述热处理的时间为5-100min。在本申请的一些实施例中，所述热氧化处理的温度可以为400、450、500、550、600、700、800或900℃，所述热氧化处理的时间可以为5、10、20、40、60、80、90或100min。通过上述热处理过程，能够将铜氧化物层中的氧扩散至铜材的铜晶界中，通过氧原子对铜晶粒的钉扎作用，提升晶界合并的阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的。具体地，所述热处理的温度为600-800℃，所述热处理的时间为5-30min。
在本申请的一些实施例中，所述热处理真空或惰性气体条件下进行。具体地，所述热处理可以在任何能在控制气氛含量的加热设备中进行，如真空炉、箱式炉、隧道炉、旋转 式气氛炉、钟罩炉、链式炉、管式炉、梭式炉或推板窑等；所述惰性气体为氮气、氦气和氩气中的至少一种。
在本申请的一些实施例中，在所述铜材热处理后，与陶瓷基板的焊接前，去除热处理后的铜材上的铜氧化物层，能够防止焊接所用焊料的氧化，影响焊接质量。
具体地，去除铜氧化物层可以通过酸洗或打磨(如砂纸打磨、CMP化学机械抛光工艺(CMP)打磨)来进行。
具体地，去除铜氧化物层的方式为酸洗。在酸洗去除铜氧化物层时，可以将所述热氧化处理后的铜材与所用酸溶液接触一段时间，再取出后水洗、干燥，以便后续焊接；通过酸洗去除铜氧化物层用时较短(如2-10s)、去除效率较高、操作便捷，且铜材的厚度损失极少。具体地，所述酸洗采用的酸包括硫酸、盐酸、磷酸中的至少一种。具体地，所述酸洗采用的酸溶液的浓度可以在10wt％以下，例如在1-10wt％。
在本申请的一些实施例中，所述去除铜氧化物层后的铜材中，氧元素的质量占铜材质量的0.001-0.01％。由此，铜材中含有上述含量的氧，通过氧原子对铜晶粒的钉扎作用，能够提升晶界合并的阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的。具体地，所述去除铜氧化物层后的铜材中，氧元素的质量占铜材质量的0.002-0.005％。
在本申请的一些实施例中，将所述去除铜氧化物层后的铜材与陶瓷基板进行焊接。具体地，所述焊接为活性金属焊接。活性金属焊接一般是在高温、高真空环境下进行，未做处理的铜材在此工艺过程中会由于二次结晶，晶粒变得粗大。本申请提供的陶瓷覆铜板的制备方法，在将铜材焊接前，对铜材进行化学氧化，在铜材表面形成铜氧化物层，然后对化学氧化处理后的铜材进行热处理，使铜材内扩散有氧原子；之后在铜材与陶瓷基板焊接之前去除该铜氧化物层，以免影响焊接质量；在焊接过程中，通过氧原子在铜材内的钉扎作用，增大其晶界合并的阻力，从而抑制铜晶粒的二次结晶，实现控制陶瓷覆铜板的晶粒大小在合适范围，提高CCD对铜材的识别率，并提升铜材与陶瓷基板的结合强度。
在本申请的一些实施例中，所述焊接为活性金属焊接，所述活性金属焊接的步骤包括：在陶瓷基板的表面设置活性金属焊料；将所述去除铜氧化物层后的铜材覆盖于所述活性金属焊料上；在真空环境下进行焊接，以在所述陶瓷基板上形成铜层，得到陶瓷覆铜板，其中在陶瓷基板的表面设置活性金属焊料的方法包括：在陶瓷基板的表面印刷活性金属焊料。
在本申请的一些实施例中，活性金属焊接的步骤包括：在陶瓷基板的表面印刷活性金属焊料；将所述去除铜氧化物层后的铜材覆盖于所述活性金属焊料上；在真空环境下进行焊接，以在所述陶瓷基板上形成铜层，得到陶瓷覆铜板。
在本申请的一些实施例中，所述陶瓷覆铜板的铜层中，至少远离所述陶瓷基板一侧的铜的晶粒为10-200μm。既能避免过大的铜晶粒对于CCD定位的不利影响，提高自动识别率，不影响后续芯片焊接、绑线等自动化封装工艺，又可避免过大的铜晶粒影响焊层与铜材的结合强度；还可避免过小的铜晶粒所导致的铜材塑性较低及陶瓷覆铜板中热应力释放不充分的问题。
在本申请的一些实施例中，所述焊接后，所述铜材中远离所述陶瓷基板一侧的铜的晶粒尺寸为10-200μm。
在本申请的一些实施例中，所述陶瓷基板的厚度为0.2-2mm。所述陶瓷基板包括氮化物陶瓷板、氧化物陶瓷板或硼化物陶瓷板。具体地，所述陶瓷基板为氮化物陶瓷。
本申请第二方面还提供了一种陶瓷覆铜板，该陶瓷覆铜板采用本申请第一方面所述陶瓷覆铜板的制备方法制备得到。由此，该陶瓷覆铜板具有陶瓷覆铜板的制备方法的全部特征和优点，在此不再一一赘述。
在本申请的又一个方面，提供一种陶瓷覆铜板，该陶瓷覆铜板采用上述制备陶瓷覆铜板的方法制备得到。由此，该陶瓷覆铜板具有制备陶瓷覆铜板的方法的全部特征和优点，在此不再一一赘述。
本申请的第三方面提供一种陶瓷覆铜板，包括依次层叠设置的陶瓷基体、活性金属焊接层和铜层，其中，所述铜层中含有氧元素，所述氧元素的质量占所述铜层质量的0.002-0.005％。该陶瓷覆铜板的铜层中含有上述含量的氧，能够对铜晶粒起到钉扎作用，提高铜晶粒之间界面的合并阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的，使得陶瓷覆铜板具有较高的CCD识别率。
在本申请的又一个方面，提供一种陶瓷覆铜板，包括依次层叠设置的陶瓷基板、活性金属焊接层和铜层，其中，所述铜层中含有氧元素。该陶瓷覆铜板的铜层中含有氧元素，能够对铜晶粒起到钉扎作用，提高铜晶粒之间界面的合并阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的，使得陶瓷覆铜板具有较高的CCD识别率。
在本申请的一些实施例中，所述铜层中所述氧元素的质量占所述铜层质量的0.002-0.005％。当该陶瓷覆铜板的铜层中含有上述含量的氧时，能够对铜晶粒起到钉扎作用，提高铜晶粒之间界面的合并阻力，从而对二次结晶晶粒生长的过程有较强的抑制作用，达到控制晶粒大小的目的，使得陶瓷覆铜板具有较高的CCD识别率。
在本申请的一些实施例中，至少在远离所述活性金属焊接层的一侧的铜层中铜的晶粒为10-200μm。既能避免过大的铜晶粒对于CCD定位的不利影响，提高自动识别率，不影 响后续芯片焊接、绑线等自动化封装工艺，又可避免过大的铜晶粒影响焊层与铜材的结合强度；还可避免过小的铜晶粒所导致的铜材塑性较低及陶瓷覆铜板中热应力释放不充分的问题。
在本申请的一些实施例中，远离所述活性金属焊接层的一侧的铜层中铜的晶粒尺寸为10-200μm。
在本申请的一些实施例中，所述陶瓷基体包括氮化物陶瓷板、氧化物陶瓷板或硼化物陶瓷板。具体地，所述陶瓷基体为氮化物陶瓷。
下面通过具体的实施例对本申请的方案进行说明，需要说明的是，下面的实施例仅用于说明本申请，而不应视为限定本申请的范围。实施例中未注明具体技术或条件的，按照本领域内的文献所描述的技术或条件或者按照产品说明书进行。所用试剂或仪器未注明生产厂商者，均为可以通过市购获得的常规产品。
实施例1
陶瓷覆铜板的制备方法，包括：
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将清洗、干燥后的铜片置于含有60g/L的NaClO 2和20g/L的NaOH的氧化液中，在50℃下进行化学氧化处理20min，以在铜片的相对设置的两个侧面均形成厚度为1μm的铜氧化物层；
(3)将化学氧化处理后的铜材置于链式炉中，通入氮气作保护气体，在700℃下进行热处理10min，以使所述铜材内扩散有氧原子；
(4)使用硫酸对上述热处理后的铜片进行表面酸洗，以去除铜氧化物层，之后进行水洗、烘干，得到氧元素质量百分含量为0.002％的铜片；
(5)将步骤(4)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
实施例2
陶瓷覆铜板的制备方法，包括：
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将清洗、干燥后的铜片置于含有60g/L的NaClO 2和20g/L的NaOH的氧化液中，在70℃下进行化学氧化处理30min，以在铜片的相对设置的两个侧面均形成厚度为2μm的 铜氧化物层；
(3)将化学氧化处理后的铜材置于链式炉中，通入氮气作保护气体，在700℃下进行热处理10min，以使所述铜材内扩散有氧原子；
(4)使用硫酸对上述热处理后的铜片进行表面酸洗，以去除铜氧化物层，之后进行水洗、烘干，得到氧元素质量百分含量为0.003％的铜片；
(5)将步骤(4)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
实施例3
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将清洗、干燥后的铜片置于含有80g/L的H 2SO 4和100g/L的H 2O 2的氧化液中，在60℃下进行化学氧化处理20min，以在铜片的相对设置的两个侧面均形成厚度为1μm的铜氧化物层；
(3)将化学氧化处理后的铜材置于链式炉中，通入氮气作保护气体，在700℃下进行热处理10min，以使所述铜材内扩散有氧原子；
(4)使用硫酸对上述热处理后的铜片进行表面酸洗，以去除铜氧化物层，之后进行水洗、烘干，得到氧元素质量百分含量为0.002％的铜片；
(5)将步骤(4)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
实施例4
陶瓷覆铜板的制备方法，包括：
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将清洗、干燥后的铜片置于含有60g/L的NaClO 2和20g/L的NaOH的氧化液中，在50℃下进行化学氧化处理20min，以在铜片的相对设置的两个侧面均形成厚度为1μm的铜氧化物层；
(3)将化学氧化处理后的铜材置于链式炉中，通入氮气作保护气体，在600℃下进行热处理30min，以使所述铜材内扩散有氧原子；
(4)使用硫酸对上述热处理后的铜片进行表面酸洗，以去除铜氧化物层，之后进行水 洗、烘干，得到氧元素质量百分含量为0.002％的铜片；
(5)将步骤(4)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
实施例5
陶瓷覆铜板的制备方法，包括：
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将清洗、干燥后的铜片置于含有60g/L的NaClO 2和20g/L的NaOH的氧化液中，在50℃下进行化学氧化处理20min，以在铜片的相对设置的两个侧面均形成厚度为1μm的铜氧化物层；
(3)将化学氧化处理后的铜材置于链式炉中，通入氮气作保护气体，在800℃下进行热处理15min，以使所述铜材内扩散有氧原子；
(4)使用硫酸对上述热处理后的铜片进行表面酸洗，以去除铜氧化物层，之后进行水洗、烘干，得到氧元素质量百分含量为0.003％的铜片；
(5)将步骤(4)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
对比例1
陶瓷覆铜板的制备方法，包括：
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将步骤(1)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
对比例2
陶瓷覆铜板的制备方法，包括：
(1)提供厚度为0.5mm无氧铜片(铜含量为99.999％)，进行表面清洗，具体为：先采用稀NaOH溶液清洗掉表面油污，再在乙醇中进行超声清洗，并干燥；
(2)将清洗、干燥后的铜片置于含有60g/L的NaClO 2和20g/L的NaOH的氧化液中，在50℃下进行化学氧化处理20min，以在铜片的相对设置的两个侧面均形成厚度为1μm的 铜氧化物层；
(3)使用硫酸对上述化学处理后的铜片进行表面酸洗，以去除铜氧化物层，之后进行水洗、烘干片；
(4)将步骤(3)得到的铜片与厚0.32mm氮化硅陶瓷基板进行活性金属焊接，具体是在氮化铝陶瓷基板的一表面丝印含Ti的活性金属焊料，将上述铜片覆盖于所述活性金属焊料上，在真空环境下于850℃下焊接，得到陶瓷覆铜板。
性能测试
晶粒尺寸：通过晶相显微镜观察陶瓷覆铜板铜层中铜晶粒尺寸大小，计算晶粒尺寸的具体方法为截线法，在铜面多处取样，并在其上画一定长度的直线，统计经过该划线处的晶粒个数，通过划线长度除于晶粒个数即为晶粒尺寸。
测试结果：分别测试实施例1-5和对比例1-2的陶瓷覆铜板的性能，测试结果如表1所示：
表1
  晶粒尺寸(μm)
实施例1 50
实施例2 42
实施例3 40
实施例4 100
实施例5 30
对比例1 500
对比例2 500
由表1的测试结果可知，相较于对比例1-2制备得到的陶瓷覆铜板，本申请实施例1-5的制备得到的陶瓷覆铜板的铜晶粒尺寸较小，更有利于CCD定位，提高后续在陶瓷覆铜板上进行芯片焊接、绑线等自动化封装工艺的质量。
以上所述实施例仅表达了本申请的几种实施方式，其描述较为具体和详细，但并不能因此而理解为对本申请专利范围的限制。应当指出的是，对于本领域的普通技术人员来说，在不脱离本申请构思的前提下，还可以做出若干变形和改进，这些都属于本申请的保护范围。因此，本申请专利的保护范围应以所附权利要求为准。
在本申请的描述中，术语“上”、“下”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请而不是要求本申请必须以特定的方位构造和操作，因此不能理解为对本申请的限制。
在本说明书的描述中，参考术语“一个实施例”、“另一个实施例”等的描述意指结合该实施例描述的具体特征、结构、材料或者特点包含于本申请的至少一个实施例中。在本说明书中，对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且，描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外，在不相互矛盾的情况下，本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。

Claims (18)

  1. 一种制备陶瓷覆铜板的方法，其中，包括以下步骤：
    提供铜材；
    在所述铜材表面形成铜氧化物层；
    对形成有所述铜氧化物层的铜材进行热处理，以使所述铜材内扩散有氧原子；
    去除所述热处理后的铜材上的铜氧化物层；
    将去除铜氧化物层后的铜材与陶瓷基板进行焊接，得到陶瓷覆铜板。
  2. 如权利要求1所述的方法，其中，形成所述铜氧化层包括对所述铜材进行化学氧化处理。
  3. 如权利要求2所述的方法，其中，所述化学氧化处理是通过以下至少之一的方法进行的：
    (1)采用次氯酸盐和强碱的混合液对所述铜材进行处理；
    (2)采用强酸和双氧水的混合溶液对所述铜材进行处理；
    (3)采用酸性过硫酸盐溶液对所述铜材进行处理。
  4. 如权利要求3所述的方法，其中，所述化学氧化处理是通过以下至少之一的方法进行的：
    (1)在30-100℃条件下，采用包含10-200g/L的次氯酸盐和10-100g/L的强碱的氧化液氧化5-100min；
    (2)在30-80℃条件下，采用包含10-200g/L的强酸和10-150g/L的H 2O 2的氧化液氧化5-40min；
    (3)在30-80℃，PH＜4条件下，采用包含30-150g/L过硫酸盐氧化液氧化5-40min。
  5. 如权利要求1所述的方法，其中，所述铜氧化物层的厚度为0.5-3μm。
  6. 如权利要求1所述的方法，其中，所述热处理的温度为400-900℃，所述热处理的时间为5-100min。
  7. 如权利要求1所述的方法，其中，所述热处理在真空或惰性气体条件下进行。
  8. 如权利要求1所述的方法，其中，所述去除铜氧化物层后的铜材中，氧元素的质量占铜材质量的0.001-0.01％。
  9. 如权利要求1所述的方法，其中，所述焊接为活性金属焊接，所述活性金属焊接的步骤包括：
    在陶瓷基板的表面设置活性金属焊料；
    将所述去除铜氧化物层后的铜材覆盖于所述活性金属焊料上；
    在真空环境下进行焊接，以在所述陶瓷基板上形成铜层，得到陶瓷覆铜板。
  10. 如权利要求1所述的方法，其中，所述焊接后，所述铜材中远离所述陶瓷基板一侧的铜的晶粒尺寸为10-200μm。
  11. 如权利要求1所述的方法，其中，所述陶瓷基板包括氮化物陶瓷。
  12. 如权利要求1所述的方法，其中，进一步包括：在所述铜材表面形成铜氧化物层前，对所述铜材进行清洗处理。
  13. 如权利要求12所述的方法，其中，所述清洗处理采用的试剂包括氢氧化钠、硫酸、柠檬酸钠、丙酮、乙醇中的至少一种。
  14. 一种陶瓷覆铜板，其中，采用如权利要求1-13所述的方法制备得到。
  15. 一种陶瓷覆铜板，其中，包括依次层叠设置的陶瓷基体、活性金属焊接层和铜层，其中，所述铜层中含有氧元素。
  16. 如权利要求15所述的陶瓷覆铜板，其中，所述铜层中所述氧元素的质量占所述铜层质量的0.002-0.005％。
  17. 如权利要求15所述的陶瓷覆铜板，其中，远离所述活性金属焊接层的一侧的铜层中铜的晶粒尺寸为10-200μm。
  18. 如权利要求15所述的陶瓷覆铜板，其中，所述陶瓷基体为氮化物陶瓷。
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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115124362A (zh) * 2022-06-20 2022-09-30 昆明冶金研究院有限公司北京分公司 陶瓷覆铜板及其制备方法
CN116001387A (zh) * 2022-12-31 2023-04-25 江苏富乐华半导体科技股份有限公司 一种dcb增加铜厚的方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108367994A (zh) * 2015-12-07 2018-08-03 阿鲁比斯斯托尔伯格股份有限公司 铜陶瓷基板、制备铜陶瓷基板的铜半成品及制备铜陶瓷基板的方法
WO2019105814A1 (de) * 2017-11-29 2019-06-06 Rogers Germany Gmbh Verfahren zur herstellung eines metallhalbzeugs, verfahren zur herstellung eines metall-keramik-substrats und metall-keramik-substrat
CN110734295A (zh) * 2019-09-17 2020-01-31 昆山市柳鑫电子有限公司 一种氮化铝陶瓷覆铜板的制备方法
CN110843272A (zh) * 2018-08-21 2020-02-28 比亚迪股份有限公司 陶瓷覆铜板及其制备工艺和应用
CN110937912A (zh) * 2018-09-25 2020-03-31 比亚迪股份有限公司 一种氮化硅陶瓷覆铜基板及其制备方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07114316B2 (ja) * 1989-09-28 1995-12-06 電気化学工業株式会社 銅回路を有する窒化アルミニウム基板の製造方法
JP2816042B2 (ja) * 1992-02-04 1998-10-27 川崎製鉄株式会社 銅板とアルミナあるいはＡｌＮ基板の接合方法
CN1139117C (zh) * 1995-03-20 2004-02-18 株式会社东芝 氮化硅电路板
TW200927481A (en) * 2007-12-18 2009-07-01 Wen-Jung Jiang Method of producing ceramic-copper foil laminated board
TWI572582B (zh) * 2013-09-30 2017-03-01 三菱綜合材料股份有限公司 銅／陶瓷接合體，銅／陶瓷接合體之製造方法及電力模組用基板
CN103819215B (zh) * 2014-03-20 2015-04-15 李磊 氮化铝基陶瓷覆铜板的制备方法
WO2020105734A1 (ja) * 2018-11-22 2020-05-28 デンカ株式会社 セラミックス－銅複合体、セラミックス－銅複合体の製造方法、セラミックス回路基板およびパワーモジュール

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108367994A (zh) * 2015-12-07 2018-08-03 阿鲁比斯斯托尔伯格股份有限公司 铜陶瓷基板、制备铜陶瓷基板的铜半成品及制备铜陶瓷基板的方法
WO2019105814A1 (de) * 2017-11-29 2019-06-06 Rogers Germany Gmbh Verfahren zur herstellung eines metallhalbzeugs, verfahren zur herstellung eines metall-keramik-substrats und metall-keramik-substrat
CN110843272A (zh) * 2018-08-21 2020-02-28 比亚迪股份有限公司 陶瓷覆铜板及其制备工艺和应用
CN110937912A (zh) * 2018-09-25 2020-03-31 比亚迪股份有限公司 一种氮化硅陶瓷覆铜基板及其制备方法
CN110734295A (zh) * 2019-09-17 2020-01-31 昆山市柳鑫电子有限公司 一种氮化铝陶瓷覆铜板的制备方法

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP4175425A4 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115124362A (zh) * 2022-06-20 2022-09-30 昆明冶金研究院有限公司北京分公司 陶瓷覆铜板及其制备方法
CN115124362B (zh) * 2022-06-20 2023-07-18 昆明冶金研究院有限公司北京分公司 陶瓷覆铜板及其制备方法
CN116001387A (zh) * 2022-12-31 2023-04-25 江苏富乐华半导体科技股份有限公司 一种dcb增加铜厚的方法

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