WO2021258462A1 - 显示面板及显示装置 - Google Patents

显示面板及显示装置 Download PDF

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Publication number
WO2021258462A1
WO2021258462A1 PCT/CN2020/103161 CN2020103161W WO2021258462A1 WO 2021258462 A1 WO2021258462 A1 WO 2021258462A1 CN 2020103161 W CN2020103161 W CN 2020103161W WO 2021258462 A1 WO2021258462 A1 WO 2021258462A1
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WO
WIPO (PCT)
Prior art keywords
layer
inorganic
signal line
structure layer
display panel
Prior art date
Application number
PCT/CN2020/103161
Other languages
English (en)
French (fr)
Inventor
舒敏
原晶
Original Assignee
武汉华星光电半导体显示技术有限公司
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Application filed by 武汉华星光电半导体显示技术有限公司 filed Critical 武汉华星光电半导体显示技术有限公司
Priority to US16/978,702 priority Critical patent/US11581386B2/en
Publication of WO2021258462A1 publication Critical patent/WO2021258462A1/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
    • G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
    • G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
    • G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
    • G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
    • G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
    • G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
    • G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/40—OLEDs integrated with touch screens

Definitions

  • This application relates to the field of display technology, in particular to a display panel and a display device.
  • DOT Direct on-cell touch
  • DOT technology makes Due to its narrow bezel, lightness, and high transmittance, the display panel of the company has gradually become the mainstream trend of touch technology.
  • the design structure of the bonding area of the display panel is that the pads formed by patterning the metal conductive layer in the DOT overlap the metal circuits in the array substrate.
  • the film structure of the non-metal area between the pads is a direct contact between the organic film layer and the inorganic film layer, the adhesion between the film layers of the non-metal area is poor, which in turn leads to the flexible circuit board and the pad. It is easy to fall off after binding, which greatly reduces the yield of the display panel.
  • the present application provides a display panel and a display device to solve the technical problem that the flexible circuit board is prone to fall off after bonding due to poor adhesion between the film layers in the non-metal area of the bonding area.
  • the present application provides a display panel, which includes a binding area for binding and connecting with a flexible circuit board, and the display panel includes:
  • a thin film transistor functional layer, the part of the thin film transistor functional layer located in the bonding area includes a first inorganic structure layer and a plurality of signal lines arranged on the first inorganic structure layer;
  • a conductive structure layer is arranged on the signal line, the conductive structure layer includes a second inorganic structure layer and a conductive layer arranged in sequence, the second inorganic structure layer is located in the binding area Is partially arranged on the signal line and directly arranged on the first inorganic structure layer, the part of the conductive layer located in the binding area includes a plurality of binding members, and the binding member and the signal
  • the wires are correspondingly arranged and electrically connected; the contact surface between the portion of the second inorganic structure layer located in the binding zone and the first inorganic structure layer is a rough surface.
  • a portion of the second inorganic structure layer corresponding to the signal line is provided with a via hole, the via hole exposes the signal line, and the binding member passes through the The via hole is electrically connected to the signal line.
  • the present application also provides a display panel, which includes a binding area for binding and connecting with a driving device, and the display panel includes:
  • a thin film transistor functional layer, the part of the thin film transistor functional layer located in the bonding area includes a first inorganic structure layer and a plurality of signal lines arranged on the first inorganic structure layer;
  • a conductive structure layer is arranged on the signal line, the conductive structure layer includes a second inorganic structure layer and a conductive layer arranged in sequence, the second inorganic structure layer is located in the binding area Is partially arranged on the signal line and directly arranged on the first inorganic structure layer, the part of the conductive layer located in the binding area includes a plurality of binding members, and the binding member and the signal The wires are correspondingly set and electrically connected.
  • the contact surface between the portion of the second inorganic structure layer located in the binding zone and the first inorganic structure layer is a rough surface.
  • the display panel further includes a display area
  • the portion of the conductive structure layer located in the display area includes a plurality of bridges, the second inorganic structure layer includes a first inorganic layer and a second inorganic layer arranged in sequence, and the bridges are arranged on the first inorganic layer. Between the second inorganic layer and the second inorganic layer, the portion of the conductive layer located in the display area further includes a plurality of first touch electrodes and second touch electrodes arranged in the same layer, and adjacent first touch electrodes The control electrode is electrically connected through the bridge;
  • the binding member and the first touch electrode are arranged in the same layer.
  • the display panel further includes an organic light-emitting device layer and an encapsulation layer sequentially disposed on the thin film transistor functional layer, and the first inorganic layer is disposed on the encapsulation layer.
  • the first inorganic structure layer includes a substrate, a buffer layer, a gate insulating layer, and an interlayer insulating layer that are arranged in sequence, and the second inorganic structure layer is located in the binding area The part covers the interlayer insulating layer.
  • the thin film transistor functional layer includes an active layer, a gate metal layer, a first source/drain metal layer, and a second source/drain metal layer arranged in sequence, and the active layer is arranged at On the buffer layer, the gate insulating layer is disposed on the active layer, the gate metal layer is disposed on the gate insulating layer, and the interlayer insulating layer is disposed on the gate metal Layer, the first source-drain metal layer is disposed on the interlayer insulating layer;
  • the signal line includes a first sub-signal line and a second sub-signal line sequentially arranged on the first inorganic structure layer, the first sub-signal line and the first source-drain metal layer are arranged in the same layer, so The second sub-signal line and the second source-drain metal layer are arranged in the same layer.
  • a portion of the second inorganic structure layer corresponding to the signal line is provided with a via hole, the via hole exposes the signal line, and the binding member passes through the The via hole is electrically connected to the signal line.
  • the display panel further includes conductive glue
  • the driving device includes a plurality of connection terminals
  • the conductive glue is disposed between the connection terminals and the binding member
  • a groove is provided on the binding member, and the connecting terminal includes a convex portion that matches with the groove.
  • the driving device is a flexible circuit board.
  • the present application also provides a display device, which includes a display panel; the display panel includes a binding area, the binding area is used to bind and connect with a driving device, and the display panel further includes:
  • a thin film transistor functional layer, the part of the thin film transistor functional layer located in the bonding area includes a first inorganic structure layer and a plurality of signal lines arranged on the first inorganic structure layer;
  • a conductive structure layer is arranged on the signal line, the conductive structure layer includes a second inorganic structure layer and a conductive layer arranged in sequence, the second inorganic structure layer is located in the binding area Is partially arranged on the signal line and directly arranged on the first inorganic structure layer, the part of the conductive layer located in the binding area includes a plurality of binding members, and the binding member and the signal The wires are correspondingly set and electrically connected.
  • the contact surface between the portion of the second inorganic structure layer located in the binding zone and the first inorganic structure layer is a rough surface.
  • the display panel further includes a display area
  • the portion of the conductive structure layer located in the display area includes a plurality of bridges, the second inorganic structure layer includes a first inorganic layer and a second inorganic layer arranged in sequence, and the bridges are arranged on the first inorganic layer. Between the second inorganic layer and the second inorganic layer, the portion of the conductive layer located in the display area further includes a plurality of first touch electrodes and second touch electrodes arranged in the same layer, and adjacent first touch electrodes The control electrode is electrically connected through the bridge;
  • the binding member and the first touch electrode are arranged in the same layer.
  • the display panel further includes an organic light-emitting device layer and an encapsulation layer sequentially arranged on the thin film transistor functional layer, and the first inorganic layer is arranged on the encapsulation layer.
  • the first inorganic structure layer includes a substrate, a buffer layer, a gate insulating layer, and an interlayer insulating layer that are arranged in sequence, and the second inorganic structure layer is located in the binding area The part covers the interlayer insulating layer.
  • the thin film transistor functional layer includes an active layer, a gate metal layer, a first source/drain metal layer, and a second source/drain metal layer arranged in sequence, and the active layer is arranged at On the buffer layer, the gate insulating layer is disposed on the active layer, the gate metal layer is disposed on the gate insulating layer, and the interlayer insulating layer is disposed on the gate metal Layer, the first source-drain metal layer is disposed on the interlayer insulating layer;
  • the signal line includes a first sub-signal line and a second sub-signal line sequentially arranged on the first inorganic structure layer, the first sub-signal line and the first source-drain metal layer are arranged in the same layer, so The second sub-signal line and the second source-drain metal layer are arranged in the same layer.
  • a portion of the second inorganic structure layer corresponding to the signal line is provided with a via hole, the via hole exposes the signal line, and the binding member passes through the The via hole is electrically connected to the signal line.
  • a portion of the second inorganic structure layer corresponding to the signal line is provided with a via hole, the via hole exposes the signal line, and the binding member passes through the The via hole is electrically connected to the signal line.
  • the driving device is a flexible circuit board.
  • the display panel provided by the present application removes the organic layer in the non-conductive region film layer in the binding area, so that the non-conductive region film layer structure is the second inorganic layer in the conductive structure layer.
  • the direct contact between the structure layer and the first inorganic structure layer in the thin film transistor functional layer, due to the good adhesion between the inorganic film layer and the inorganic film layer, thereby enhancing the adhesion between the film layers in the non-conductive area Therefore, the probability of falling off after the flexible circuit board is bound to the binding member is reduced, and the product yield of the display panel is improved.
  • FIG. 1 is a schematic diagram of a planar structure of a display panel provided by an embodiment of the present application
  • Fig. 2 is a schematic cross-sectional structure view taken along the line AA' in Fig. 1;
  • Fig. 3 is a schematic cross-sectional structure view taken along the line BB' in Fig. 1;
  • FIG. 4 is a schematic diagram of the structure when the driving device and the binding member in the display panel provided by the embodiment of the present application are bound.
  • first and second are only used for descriptive purposes, and cannot be understood as indicating or implying relative importance or implicitly indicating the number of indicated technical features. Therefore, the features defined with “first” and “second” may explicitly or implicitly include one or more of the features. In the description of the present application, "a plurality of" means two or more than two, unless otherwise specifically defined.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, it can be electrical connection or it can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • connection should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection. Connected or integrally connected; it can be mechanically connected, it can be electrical connection or it can communicate with each other; it can be directly connected or indirectly connected through an intermediate medium, it can be the internal communication of two components or the interaction of two components relation.
  • the "above” or “below” of the first feature of the second feature may include direct contact between the first and second features, or may include the first and second features Not in direct contact but through other features between them.
  • “above”, “above” and “above” the second feature of the first feature include the first feature being directly above and obliquely above the second feature, or merely indicating that the level of the first feature is higher than that of the second feature.
  • the “below”, “below” and “below” of the second feature of the first feature include the first feature directly below and obliquely below the second feature, or it simply means that the level of the first feature is smaller than the second feature.
  • the display panel 100 provided by the embodiment of the present application includes a display area 10A, a bending area 10B, and a binding area 10C.
  • the binding area 10C is arranged on a side of the bending area 10B away from the display area 10A.
  • the bonding area 10C is used for bonding and connecting with the driving device 50.
  • the display panel 100 includes a thin film transistor function layer 10, an organic light emitting device layer 20, an encapsulation layer 30, and a conductive structure layer 40 arranged in sequence.
  • the portion of the thin film transistor functional layer 10 located in the bonding region 10C includes a first inorganic structure layer 11 and a plurality of signal lines 12 disposed on the first inorganic structure layer 11.
  • the conductive structure layer 40 is disposed on the signal line 12.
  • the conductive structure layer 40 includes a second inorganic structure layer 41 and a conductive layer 42 arranged in sequence.
  • the portion of the second inorganic structure layer 41 located in the bonding area 10C is disposed on the signal line 12 and directly disposed on the first inorganic structure layer 11.
  • the portion of the conductive layer 42 located in the bonding area 10C includes a plurality of bonding members 421.
  • the binding member 421 is arranged corresponding to the signal line 12 and is electrically connected.
  • the display panel 100 provided by the embodiment of the present application removes the organic layer in the non-conductive region film layer in the bonding area 10C, so that the non-conductive region film layer structure is the second inorganic structure layer 41 in the conductive structure layer 40 Direct contact with the first inorganic structure layer 11 in the thin film transistor functional layer 10, due to the good adhesion between the inorganic film layer and the inorganic film layer, thereby enhancing the adhesion between the film layers in the non-conductive area Therefore, the probability of falling off after the driving device 50 is bound with the binding member 421 is reduced, and the product yield of the display panel is improved.
  • the first inorganic structure layer 11 includes a substrate 111, a buffer layer 112, a first gate insulating layer 114, a second gate insulating layer 116, and an interlayer insulating layer 118 that are sequentially arranged.
  • the second inorganic structure layer 41 is located in the bonding region 10C and partially covers the interlayer insulating layer 118.
  • the thin film transistor functional layer 10 includes an active layer 113, a first gate metal layer 115, a second gate metal layer 117, a first source/drain metal layer 119, a first flat layer 120, and a second source/drain metal layer arranged in sequence. 121 and a second flat layer 122.
  • the active layer 113 is disposed on the buffer layer 112.
  • the first gate insulating layer 114 is disposed on the active layer 113.
  • the first gate metal layer 115 is disposed on the first gate insulating layer 114.
  • the second gate insulating layer 116 is disposed on the first gate metal layer 115.
  • the second gate metal layer 117 is disposed on the second gate insulating layer 116.
  • the interlayer insulating layer 118 is disposed on the second gate metal layer 117.
  • the first source and drain metal layer 119 is disposed on the interlayer insulating layer 118.
  • the signal line 12 includes a first sub-signal line 1201 and a second sub-signal line 1202 that are sequentially disposed on the first inorganic structure layer 11.
  • the first sub-signal line 1201 and the first source-drain metal layer 119 are arranged in the same layer.
  • the second sub-signal line 1202 and the second source-drain metal layer 121 are arranged in the same layer.
  • the first sub-signal line 1201 may be a data wiring
  • the second sub-signal line 1202 may be a high-level signal wiring or a low-level signal wiring.
  • the specific type of the signal line 1202 is not specifically limited.
  • the portion of the first source-drain metal layer 119 located in the display area 10A includes source and drain (not marked in the figure), and the portion of the second source-drain metal layer 121 located in the display area 10A includes The power signal lines (not marked in the figure), the structures of the first source/drain metal layer 119 and the second source/drain metal layer 121 are all schematics, which are used to facilitate the description of the embodiments of the present application, but should not be understood as a limitation of the present application.
  • the "same layer arrangement" in the present application means that in the preparation process, the film layer formed of the same material is patterned to obtain at least two different features, then the at least two different features are arranged in the same layer.
  • the first sub-signal line 1201 and the first source-drain metal layer 119 of this embodiment are obtained by patterning the same conductive film layer, and the first sub-signal line 1201 and the first source-drain metal layer 119 are provided in the same layer. .
  • a flat layer is formed on the thin film transistor functional layer, and then the flat layer is located in the display area and the bending area.
  • the part of the flat layer located in the binding area is exposed to the outside. Since the material of the flat layer is generally an organic photoresist, the part of the flat layer located in the binding area is exposed for a long time, and then it is very susceptible to water vapor intrusion to cause damage to the film.
  • the conductive structure layer is formed on the display area, the bending area and the bonding area, since the inorganic layer in the conductive structure layer in the bonding area is directly in contact with the flat layer, the damage of the flat layer will cause the flat layer and the conductive layer.
  • the adhesion between the inorganic layers in the structural layer is greatly reduced, resulting in poor adhesion between the film layers in the non-conductive area in the binding area, and then when the driving device and the binding member are bound, extremely It is easy to cause the driving device to fall off.
  • the portion of the second flat layer 122 located in the bonding area 10C is removed, so that the film structure in the non-conductive area of the bonding area 10C is the direct contact between the inorganic film layer and the inorganic film layer, which can greatly The adhesion between the film layers in the non-conductive area is enhanced, and the problem of falling off of the driving device 50 after binding is effectively avoided.
  • the portion of the first inorganic structure layer 11 located in the bending area 10B is also provided with a groove (not marked in the figure), and the groove is filled with organic material, which will not be repeated here.
  • the organic light emitting device layer 20 includes an anode layer 201, a pixel definition layer 202, and a light emitting layer 203 which are sequentially arranged.
  • the specific film structure of the encapsulation layer 30 can refer to the prior art, which will not be repeated here.
  • the portion of the conductive structure layer 40 located in the display area 10A includes a plurality of bridges 43.
  • the second inorganic structure layer 41 includes a first inorganic layer 411 and a second inorganic layer 412 sequentially disposed on the encapsulation layer 30.
  • the bridge 43 is disposed between the first inorganic layer 411 and the second inorganic layer 412.
  • the portion of the conductive layer 42 located in the display area 10A further includes a plurality of first touch electrodes 422 and second touch electrodes 423 arranged in the same layer.
  • the adjacent first touch electrodes 422 are electrically connected through the bridge 43.
  • the binding member 421 and the first touch electrode 422 are arranged in the same layer.
  • the first touch electrode 422 is a driving electrode
  • the second touch electrode 423 is a sensing electrode
  • the first touch electrode 422 may also be a sensing electrode
  • the second touch electrode 423 is a driving electrode, which is not limited in this application.
  • the binding member 421 may also be provided on the same layer as the bridge 43, which is not limited in this application.
  • the contact surface between the portion of the second inorganic structure layer 41 located in the binding region 10C and the first inorganic structure layer 11 is a rough surface.
  • an etching process can be used to form a rough structure on the surface of the interlayer insulating layer 118, for example, it can be an uneven microstructure, and then Increasing the contact area between the first inorganic structure layer 11 and the second inorganic structure layer 41 is beneficial to improve the adhesion between the first inorganic structure layer 11 and the second inorganic structure layer 41, and further reduces the binding of the driving device 50. Risk of shedding.
  • the portion of the second inorganic structure layer 41 corresponding to the signal line 12 is provided with a via 41A.
  • the via 41A exposes the signal line 12.
  • the binding member 421 is electrically connected to the signal line 12 through the via 41A.
  • the display panel 100 further includes a conductive adhesive 60, as shown in FIG. 4.
  • the driving device 50 includes a plurality of connection terminals 501.
  • the conductive glue 60 is disposed between the connection terminal 501 and the binding member 421.
  • the binding member 421 is provided with a groove 421A.
  • the connection terminal 501 includes a convex portion 501A.
  • the convex part 501A matches the groove 421A.
  • the conductive adhesive 60 includes a plurality of conductive particles 601.
  • the connecting terminal 501 and the binding member 421 in the driving device 50 are electrically connected through the conductive particles 601.
  • the driving device 50 may be a flexible circuit board or other peripheral circuits.
  • the driving device 50 is a flexible circuit board, and a driving chip (not shown in the figure) is provided on the flexible circuit board.
  • the groove 421A on the binding member 421 is formed by an etching process.
  • the arrangement of the groove 421A can increase the ability of the binding member 421 to capture the conductive particles 601, thereby increasing the stability of the electrical connection between the binding member 421 and the connection terminal 501 during the binding and pressing process.
  • the groove 421A on the binding member 421 is naturally formed in the via 41A on the second inorganic structure layer 41.
  • the portion of the conductive layer 42 located in the binding area 10C can directly form the binding member 421 with a recessed structure in the via 41A. That is, the groove 421A is naturally formed in the binding member 421.
  • the ratio of the projected area of the binding member 421 on the plane where the first inorganic structure layer 11 is located to the projected area of the via 41A on the plane where the first inorganic structure layer 11 is located is in the range of 10:9-10:3, pass The aperture of the via 41A is adjusted so that when the binding member 421 covers the via 41A, the region corresponding to the via 41A naturally forms a groove 421A.
  • the binding member 421 can capture more conductive particles 601, thereby increasing the electrical connection stability between the binding member 421 and the connection terminal 501, thereby improving the flexible circuit board and the binding The stability of the transmission signal between the fixed parts 421.
  • the via 41A corresponds to the middle area of the binding member 421, so that the groove 421A is formed in the middle area of the binding member 421, so that the wall thickness around the groove 421A tends to be balanced, which improves the heat-compression bonding.
  • the portion of the second inorganic structure layer 41 located between the adjacent binding members 421 forms a recessed structure 41B, as shown in FIG. 4 Show.
  • the connecting terminal 501 and the binding member 421 in the flexible circuit board are bound and pressed, the conductive particles 601 located between the adjacent binding members 421 tend to fall into the recessed structure 41B, thereby reducing the adjacent binding.
  • the number of conductive particles 601 between the fixed parts 421 further reduces the risk of short-circuiting between adjacent binding parts 421.
  • the second flat layer 122 in the non-conductive area film layer in the bonding area 10C is removed, so that the non-conductive area film layer structure is the second inorganic structure layer 41 in the conductive structure layer 40
  • the non-conductive area film layer structure is the second inorganic structure layer 41 in the conductive structure layer 40
  • Direct contact with the first inorganic structure layer 11 in the thin film transistor functional layer 10 due to the good adhesion between the inorganic film layer and the inorganic film layer, thereby enhancing the adhesion between the film layers in the non-conductive area Therefore, the probability of falling off after the flexible circuit board is bound with the binding member 421 is reduced, and the product yield of the display panel is improved.
  • the present application also provides a display device, which includes a display panel.
  • a display panel which includes a display panel.
  • the display panel provided by the present application removes the organic layer in the non-conductive region film layer in the binding area, so that the non-conductive region film layer structure is the second inorganic layer in the conductive structure layer.
  • the direct contact between the structure layer and the first inorganic structure layer in the thin film transistor functional layer, due to the good adhesion between the inorganic film layer and the inorganic film layer, thereby enhancing the adhesion between the film layers in the non-conductive area Therefore, the probability of falling off after the flexible circuit board is bound to the binding member is reduced, and the product yield of the display panel is improved.

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Abstract

本申请提供一种显示面板及显示装置，该显示面板包括绑定区、依次设置的薄膜晶体管功能层和导电结构层，薄膜晶体管功能层位于绑定区的部分包括第一无机结构层和多条信号线；导电结构层包括依次设置的第二无机结构层和导电层，第二无机结构层位于绑定区的部分设置在信号线上，且直接设置于第一无机结构层上。

Description

显示面板及显示装置 技术领域
本申请涉及显示技术领域，具体涉及一种显示面板及显示装置。
 背景技术
DOT（触控屏直接嵌入到显示屏上，Direct on-cell touch）是一种直接在封装玻璃表面制作触控线路的内嵌式触控技术，相较于外挂式触控技术，DOT技术制作的显示面板因具有窄边框、轻薄、透过率高等优点，逐渐成为触控技术的主流趋势。
 技术问题
在DOT制程后，显示面板绑定区的设计结构为由DOT中的金属导电层图案化形成的焊盘搭接阵列基板中的金属线路。然而，由于焊盘之间非金属区域的膜层结构为有机膜层与无机膜层的直接接触，使得该非金属区域膜层之间的粘附性较差，进而导致柔性电路板与焊盘绑定后极易发生脱落，从而大大降低了显示面板的良率。
 技术解决方案
本申请提供一种显示面板及显示装置，以解决因绑定区非金属区域膜层之间的粘附性较差而导致柔性电路板在绑定后易发生脱落的技术问题。
本申请提供一种显示面板，其包括绑定区，所述绑定区用于与柔性电路板绑定连接，所述显示面板包括：
一薄膜晶体管功能层，所述薄膜晶体管功能层位于所述绑定区的部分包括第一无机结构层和设置于所述第一无机结构层上的多条信号线；以及
一导电结构层，所述导电结构层设置于所述信号线上，所述导电结构层包括依次设置的第二无机结构层和导电层，所述第二无机结构层位于所述绑定区的部分设置在所述信号线上，且直接设置于所述第一无机结构层上，所述导电层位于所述绑定区的部分包括多个绑定件，所述绑定件与所述信号线对应设置且电性连接；所述第二无机结构层位于所述绑定区的部分与所述第一无机结构层的接触面为粗糙面。
在本申请所述的显示面板中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
本申请还提供一种显示面板，其包括绑定区，所述绑定区用于与驱动器件绑定连接，所述显示面板包括：
一薄膜晶体管功能层，所述薄膜晶体管功能层位于所述绑定区的部分包括第一无机结构层和设置于所述第一无机结构层上的多条信号线；以及
一导电结构层，所述导电结构层设置于所述信号线上，所述导电结构层包括依次设置的第二无机结构层和导电层，所述第二无机结构层位于所述绑定区的部分设置在所述信号线上，且直接设置于所述第一无机结构层上，所述导电层位于所述绑定区的部分包括多个绑定件，所述绑定件与所述信号线对应设置且电性连接。
在本申请所述的显示面板中，所述第二无机结构层位于所述绑定区的部分与所述第一无机结构层的接触面为粗糙面。
在本申请所述的显示面板中，所述显示面板还包括显示区；
所述导电结构层位于所述显示区的部分包括多个架桥，所述第二无机结构层包括依次设置的第一无机层和第二无机层，所述架桥设置于所述第一无机层与所述第二无机层之间，所述导电层位于所述显示区的部分还包括多个同层设置的第一触控电极和第二触控电极，相邻的所述第一触控电极通过所述架桥电性连接；
所述绑定件与所述第一触控电极同层设置。
在本申请所述的显示面板中，所述显示面板还包括依次设置于所述薄膜晶体管功能层上的有机发光器件层和封装层，所述第一无机层设置于所述封装层上。
在本申请所述的显示面板中，所述第一无机结构层包括依次设置的衬底、缓冲层、栅极绝缘层和层间绝缘层，所述第二无机结构层位于所述绑定区的部分覆盖所述层间绝缘层。
在本申请所述的显示面板中，所述薄膜晶体管功能层包括依次设置的有源层、栅极金属层、第一源漏金属层和第二源漏金属层，所述有源层设置于所述缓冲层上，所述栅极绝缘层设置于所述有源层上，所述栅极金属层设置于所述栅极绝缘层上，所述层间绝缘层设置于所述栅极金属层上，所述第一源漏金属层设置于所述层间绝缘层上；
所述信号线包括依次设置在所述第一无机结构层上的第一子信号线和第二子信号线，所述第一子信号线与所述第一源漏金属层同层设置，所述第二子信号线与所述第二源漏金属层同层设置。
在本申请所述的显示面板中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
在本申请所述的显示面板中，所述显示面板还包括导电胶，所述驱动器件包括多个连接端子，所述导电胶设置在所述连接端子与所述绑定件之间；
所述绑定件上设置有凹槽，所述连接端子包括凸部，所述凸部与所述凹槽相匹配。
在本申请所述的显示面板中，所述驱动器件为柔性电路板。
本申请还提供一种显示装置，其包括显示面板；所述显示面板包括绑定区，所述绑定区用于与驱动器件绑定连接，所述显示面板还包括：
一薄膜晶体管功能层，所述薄膜晶体管功能层位于所述绑定区的部分包括第一无机结构层和设置于所述第一无机结构层上的多条信号线；以及
一导电结构层，所述导电结构层设置于所述信号线上，所述导电结构层包括依次设置的第二无机结构层和导电层，所述第二无机结构层位于所述绑定区的部分设置在所述信号线上，且直接设置于所述第一无机结构层上，所述导电层位于所述绑定区的部分包括多个绑定件，所述绑定件与所述信号线对应设置且电性连接。
在本申请所述的显示装置中，所述第二无机结构层位于所述绑定区的部分与所述第一无机结构层的接触面为粗糙面。
在本申请所述的显示装置中，所述显示面板还包括显示区；
所述导电结构层位于所述显示区的部分包括多个架桥，所述第二无机结构层包括依次设置的第一无机层和第二无机层，所述架桥设置于所述第一无机层与所述第二无机层之间，所述导电层位于所述显示区的部分还包括多个同层设置的第一触控电极和第二触控电极，相邻的所述第一触控电极通过所述架桥电性连接；
所述绑定件与所述第一触控电极同层设置。
在本申请所述的显示装置中，所述显示面板还包括依次设置于所述薄膜晶体管功能层上的有机发光器件层和封装层，所述第一无机层设置于所述封装层上。
在本申请所述的显示装置中，所述第一无机结构层包括依次设置的衬底、缓冲层、栅极绝缘层和层间绝缘层，所述第二无机结构层位于所述绑定区的部分覆盖所述层间绝缘层。
在本申请所述的显示装置中，所述薄膜晶体管功能层包括依次设置的有源层、栅极金属层、第一源漏金属层和第二源漏金属层，所述有源层设置于所述缓冲层上，所述栅极绝缘层设置于所述有源层上，所述栅极金属层设置于所述栅极绝缘层上，所述层间绝缘层设置于所述栅极金属层上，所述第一源漏金属层设置于所述层间绝缘层上；
所述信号线包括依次设置在所述第一无机结构层上的第一子信号线和第二子信号线，所述第一子信号线与所述第一源漏金属层同层设置，所述第二子信号线与所述第二源漏金属层同层设置。
在本申请所述的显示装置中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
在本申请所述的显示装置中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
在本申请所述的显示装置中，所述驱动器件为柔性电路板。
 有益效果
相较于现有技术中的显示面板，本申请提供的显示面板通过将绑定区内非导电区域膜层中的有机层去掉，使得非导电区域膜层结构为导电结构层中的第二无机结构层与薄膜晶体管功能层中的第一无机结构层的直接接触，由于无机膜层与无机膜层之间具有良好的粘结性，进而增强了非导电区域内膜层之间的粘附力，从而降低了柔性电路板与绑定件绑定后的脱落几率，提高了显示面板的产品良率。
 附图说明
为了更清楚地说明本申请实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本申请的一些实施例，对于本领域技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是本申请实施例提供的显示面板的平面结构示意图；
图2是图1中沿AA’线的剖面结构示意图；
图3是图1中沿BB’线的剖面结构示意图；
图4是本申请实施例提供的显示面板中驱动器件与绑定件绑定时的结构示意图。
 本发明的实施方式
下面将结合本申请实施例中的附图，对本申请实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本申请一部分实施例，而不是全部的实施例。基于本申请中的实施例，本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本申请保护的范围。
在本申请的描述中，需要理解的是，术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本申请和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本申请的限制。此外，术语“第一”、“第二”仅用于描述目的，而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此，限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个所述特征。在本申请的描述中，“多个”的含义是两个或两个以上，除非另有明确具体的限定。
在本申请的描述中，需要说明的是，除非另有明确的规定和限定，术语“安装”、“相连”、“连接”应做广义理解，例如，可以是固定连接，也可以是可拆卸连接，或一体地连接；可以是机械连接，也可以是电连接或可以相互通讯；可以是直接相连，也可以通过中间媒介间接相连，可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言，可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中，除非另有明确的规定和限定，第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触，也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且，第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方，或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方，或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开，下文中对特定例子的部件和设置进行描述。当然，它们仅仅为示例，并且目的不在于限制本申请。此外，本申请可以在不同例子中重复参考数字和/或参考字母，这种重复是为了简化和清楚的目的，其本身不指示所讨论各种实施方式和/或设置之间的关系。此外，本申请提供了的各种特定的工艺和材料的例子，但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
请参阅图1至图4。本申请实施例提供的显示面板100包括显示区10A、弯折区10B和绑定区10C。绑定区10C设置在弯折区10B远离显示区10A的一侧。绑定区10C用于与驱动器件50绑定连接。显示面板100包括依次设置的薄膜晶体管功能层10、有机发光器件层20、封装层30和导电结构层40。薄膜晶体管功能层10位于绑定区10C的部分包括第一无机结构层11和设置于第一无机结构层11上的多条信号线12。导电结构层40设置于信号线12上。导电结构层40包括依次设置的第二无机结构层41和导电层42。第二无机结构层41位于绑定区10C的部分设置在信号线12上，且直接设置于第一无机结构层11上。导电层42位于绑定区10C的部分包括多个绑定件421。绑定件421与信号线12对应设置且电性连接。
由此，本申请实施例提供的显示面板100通过将绑定区10C内非导电区域膜层中的有机层去掉，使得非导电区域膜层结构为导电结构层40中的第二无机结构层41与薄膜晶体管功能层10中的第一无机结构层11的直接接触，由于无机膜层与无机膜层之间具有良好的粘结性，进而增强了非导电区域内膜层之间的粘附力，从而降低了驱动器件50与绑定件421绑定后的脱落几率，提高了显示面板的产品良率。在本申请实施例中，第一无机结构层11包括依次设置的衬底111、缓冲层112、第一栅极绝缘层114、第二栅极绝缘层116和层间绝缘层118。第二无机结构层41位于绑定区10C的部分覆盖层间绝缘层118。
薄膜晶体管功能层10包括依次设置的有源层113、第一栅极金属层115、第二栅极金属层117、第一源漏金属层119、第一平坦层120、第二源漏金属层121和第二平坦层122。有源层113设置于缓冲层112上。第一栅极绝缘层114设置于有源层113上。第一栅极金属层115设置于第一栅极绝缘层114上。第二栅极绝缘层116设置于第一栅极金属层115上。第二栅极金属层117设置于第二栅极绝缘层116上。层间绝缘层118设置于第二栅极金属层117上。第一源漏金属层119设置于层间绝缘层118上。
进一步的，在本申请实施例中，信号线12包括依次设置在第一无机结构层11上的第一子信号线1201和第二子信号线1202。第一子信号线1201与第一源漏金属层119同层设置。第二子信号线1202与第二源漏金属层121同层设置。
其中，第一子信号线1201可以为数据走线，第二子信号线1202可以为高电平信号走线或低电平信号走线等，本申请对第一子信号线1201及第二子信号线1202的具体类型均不作具体限定。
需要说明的是，在本申请中，第一源漏金属层119位于显示区10A的部分包括源极和漏极（图中未标识），第二源漏金属层121位于显示区10A的部分包括电源信号线（图中未标识），第一源漏金属层119及第二源漏金属层121的结构均为示意，用以方便描述本申请实施例，但不能理解为对本申请的限制。
另外，本申请中的“同层设置”是指在制备工艺中，将相同材料形成的膜层进行图案化处理得到至少两个不同的特征，则所述至少两个不同的特征同层设置。比如，本实施例的第一子信号线1201与第一源漏金属层119由于同一导电膜层进行图案化处理后得到，则第一子信号线1201与第一源漏金属层119同层设置。
可以理解的是，在现有技术中，在形成薄膜晶体管功能层之后，会在薄膜晶体管功能层上形成一层平坦层，然后，在平坦层位于显示区及弯折区的部分上依次进行有机发光器件层和封装层的制备，此时，平坦层位于绑定区的部分是暴露在外面的。由于平坦层的材料一般为有机光阻，平坦层位于绑定区的部分因长时间暴露出来，进而极易受到水汽的入侵而导致膜层受损。当在显示区、弯折区及绑定区上形成导电结构层时，由于绑定区内导电结构层中的无机层是直接与平坦层接触的，平坦层的受损会导致平坦层和导电结构层中无机层之间的粘结性大大降低，从而导致绑定区内非导电区域的膜层之间的粘附性较差，进而当将驱动器件与绑定件进行绑定后，极易造成驱动器件的脱落。
本实施例通过将第二平坦层122位于绑定区10C的部分去除，使得绑定区10C的非导电区域内的膜层结构为无机膜层与无机膜层之间的直接接触，进而可以大大增强非导电区域内膜层之间的粘结性，有效避免了驱动器件50在绑定后发生脱落问题。
需要说明的是，第一无机结构层11位于弯折区10B的部分还开设有一沟槽（图中未标识），沟槽内填充有有机材料，在此不再赘述。
在本申请实施例中，有机发光器件层20包括依次设置的阳极层201、像素定义层202和发光层203。另外，封装层30的具体膜层结构可以参照现有技术，在此不再赘述。
在本申请实施例中，导电结构层40位于显示区10A的部分包括多个架桥43。第二无机结构层41包括依次设置于封装层30上的第一无机层411和第二无机层412。架桥43设置于第一无机层411与第二无机层412之间。导电层42位于显示区10A的部分还包括多个同层设置的第一触控电极422和第二触控电极423。相邻的第一触控电极422通过架桥43电性连接。其中，绑定件421与第一触控电极422同层设置。
需要说明的是，本实施例中的第一触控电极422为驱动电极，第二触控电极423为感应电极。在一些实施例中，第一触控电极422也可以为感应电极，第二触控电极423为驱动电极，本申请对此不作限定。
另外，在一些实施例中，绑定件421也可以与架桥43同层设置，本申请对此不作限定。
进一步的，在一些实施例中，第二无机结构层41位于绑定区10C的部分与第一无机结构层11的接触面为粗糙面。
在形成第一无机结构层11之后，具体的，在形成层间绝缘层118之后，可以采用刻蚀工艺在层间绝缘层118的表面形成粗糙结构，例如，可以为凹凸不平的微结构，进而增加第一无机结构层11与第二无机结构层41的接触面积，从而有利于提高第一无机结构层11与第二无机结构层41的粘结性，进一步降低了驱动器件50绑定后的脱落风险。
在本申请实施例中，第二无机结构层41对应于信号线12的部分上开设有过孔41A。过孔41A裸露出信号线12。绑定件421通过过孔41A与信号线12电性连接。
进一步的，在本申请实施例中，显示面板100还包括导电胶60，如图4所示。驱动器件50包括多个连接端子501。导电胶60设置在连接端子501与绑定件421之间。绑定件421上设置有凹槽421A。连接端子501包括凸部501A。凸部501A与凹槽421A相匹配。
其中，导电胶60包括多个导电粒子601。驱动器件50中的连接端子501和绑定件421通过导电粒子601电性连接。
可选的，驱动器件50可以为柔性电路板或其他外围电路。在本申请实施例中，驱动器件50为柔性电路板，柔性电路板上设置有驱动芯片（图中未示出）。
具体的，在本申请实施例中，绑定件421上的凹槽421A通过刻蚀工艺形成。凹槽421A的设置能够增大绑定件421捕获导电粒子601的能力，从而能够增加绑定件421在绑定压合过程中与连接端子501之间的电连接稳定性。
在一些实施例中，绑定件421上的凹槽421A在第二无机结构层41上的过孔41A内自然形成。
可以理解的是，通过调整过孔41A的孔径与绑定件421大小的比例，能够使导电层42位于绑定区10C的部分在过孔41A内直接形成具有凹陷结构的绑定件421，也即，在绑定件421内自然形成凹槽421A。例如，当绑定件421于第一无机结构层11所在平面的投影面积与过孔41A于第一无机结构层11所在平面的投影面积的比值范围在10:9~10:3内时，通过调整过孔41A的孔径，使得绑定件421在覆盖过孔41A时对应于过孔41A的区域自然形成凹槽421A。当凹槽421A的尺寸足够大时，能够使得绑定件421捕获更多的导电粒子601，从而可以增加绑定件421与连接端子501之间的电连接稳定性，进而提高柔性电路板与绑定件421之间传输信号的稳定性。
进一步的，过孔41A对应于绑定件421的中间区域，以使凹槽421A形成于绑定件421的中间区域，致凹槽421A的四周壁厚趋于均衡，提高进行热压绑定时绑定件421与连接端子501的连接的稳定性。
进一步的，在本实施例中，通过将非导电区域膜层中的有机层去掉，使得第二无机结构层41位于相邻绑定件421之间的部分形成一凹陷结构41B，如图4所示。当柔性电路板中的连接端子501与绑定件421进行绑定压合时，位于相邻绑定件421之间的导电粒子601会趋向于落入凹陷结构41B内，从而可以降低相邻绑定件421之间的导电粒子601的数量，进而降低了相邻绑定件421之间的短接风险。
本申请实施例提供的显示面板100通过将绑定区10C内非导电区域膜层中的第二平坦层122去掉，使得非导电区域膜层结构为导电结构层40中的第二无机结构层41与薄膜晶体管功能层10中的第一无机结构层11的直接接触，由于无机膜层与无机膜层之间具有良好的粘结性，进而增强了非导电区域内膜层之间的粘附力，从而降低了柔性电路板与绑定件421绑定后的脱落几率，提高了显示面板的产品良率。
本申请还提供一种显示装置，其包括显示面板，该显示面板的具体结构可以参见上述实施例中显示面板100的描述，在此不再赘述。
相较于现有技术中的显示面板，本申请提供的显示面板通过将绑定区内非导电区域膜层中的有机层去掉，使得非导电区域膜层结构为导电结构层中的第二无机结构层与薄膜晶体管功能层中的第一无机结构层的直接接触，由于无机膜层与无机膜层之间具有良好的粘结性，进而增强了非导电区域内膜层之间的粘附力，从而降低了柔性电路板与绑定件绑定后的脱落几率，提高了显示面板的产品良率。
以上对本申请实施例进行了详细介绍，本文中应用了具体个例对本申请的原理及实施方式进行了阐述，以上实施例的说明只是用于帮助理解本申请的方法及其核心思想；同时，对于本领域的一般技术人员，依据本申请的思想，在具体实施方式及应用范围上均会有改变之处，综上所述，本说明书内容不应理解为对本申请的限制。

Claims (20)

  1. 一种显示面板，其包括绑定区，所述绑定区用于与柔性电路板绑定连接，其中，所述显示面板包括：
    一薄膜晶体管功能层，所述薄膜晶体管功能层位于所述绑定区的部分包括第一无机结构层和设置于所述第一无机结构层上的多条信号线；以及
    一导电结构层，所述导电结构层设置于所述信号线上，所述导电结构层包括依次设置的第二无机结构层和导电层，所述第二无机结构层位于所述绑定区的部分设置在所述信号线上，且直接设置于所述第一无机结构层上，所述导电层位于所述绑定区的部分包括多个绑定件，所述绑定件与所述信号线对应设置且电性连接；所述第二无机结构层位于所述绑定区的部分与所述第一无机结构层的接触面为粗糙面。
  2. 根据权利要求1所述的显示面板，其中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
  3. 一种显示面板，其包括绑定区，所述绑定区用于与驱动器件绑定连接，其中，所述显示面板包括：
    一薄膜晶体管功能层，所述薄膜晶体管功能层位于所述绑定区的部分包括第一无机结构层和设置于所述第一无机结构层上的多条信号线；以及
    一导电结构层，所述导电结构层设置于所述信号线上，所述导电结构层包括依次设置的第二无机结构层和导电层，所述第二无机结构层位于所述绑定区的部分设置在所述信号线上，且直接设置于所述第一无机结构层上，所述导电层位于所述绑定区的部分包括多个绑定件，所述绑定件与所述信号线对应设置且电性连接。
  4. 根据权利要求3所述的显示面板，其中，所述第二无机结构层位于所述绑定区的部分与所述第一无机结构层的接触面为粗糙面。
  5. 根据权利要求3所述的显示面板，其中，所述显示面板还包括显示区；
    所述导电结构层位于所述显示区的部分包括多个架桥，所述第二无机结构层包括依次设置的第一无机层和第二无机层，所述架桥设置于所述第一无机层与所述第二无机层之间，所述导电层位于所述显示区的部分还包括多个同层设置的第一触控电极和第二触控电极，相邻的所述第一触控电极通过所述架桥电性连接；
    所述绑定件与所述第一触控电极同层设置。
  6. 根据权利要求5所述的显示面板，其中，所述显示面板还包括依次设置于所述薄膜晶体管功能层上的有机发光器件层和封装层，所述第一无机层设置于所述封装层上。
  7. 根据权利要求3所述的显示面板，其中，所述第一无机结构层包括依次设置的衬底、缓冲层、栅极绝缘层和层间绝缘层，所述第二无机结构层位于所述绑定区的部分覆盖所述层间绝缘层。
  8. 根据权利要求7所述的显示面板，其中，所述薄膜晶体管功能层包括依次设置的有源层、栅极金属层、第一源漏金属层和第二源漏金属层，所述有源层设置于所述缓冲层上，所述栅极绝缘层设置于所述有源层上，所述栅极金属层设置于所述栅极绝缘层上，所述层间绝缘层设置于所述栅极金属层上，所述第一源漏金属层设置于所述层间绝缘层上；
    所述信号线包括依次设置在所述第一无机结构层上的第一子信号线和第二子信号线，所述第一子信号线与所述第一源漏金属层同层设置，所述第二子信号线与所述第二源漏金属层同层设置。
  9. 根据权利要求3所述的显示面板，其中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
  10. 根据权利要求9所述的显示面板，其中，所述显示面板还包括导电胶，所述驱动器件包括多个连接端子，所述导电胶设置在所述连接端子与所述绑定件之间；
    所述绑定件上设置有凹槽，所述连接端子包括凸部，所述凸部与所述凹槽相匹配。
  11. 根据权利要求3所述的显示面板，其中，所述驱动器件为柔性电路板。
  12. 一种显示装置，其包括显示面板，所述显示面板包括绑定区，所述绑定区用于与驱动器件绑定连接，其中，所述显示面板还包括：
    一薄膜晶体管功能层，所述薄膜晶体管功能层位于所述绑定区的部分包括第一无机结构层和设置于所述第一无机结构层上的多条信号线；以及
    一导电结构层，所述导电结构层设置于所述信号线上，所述导电结构层包括依次设置的第二无机结构层和导电层，所述第二无机结构层位于所述绑定区的部分设置在所述信号线上，且直接设置于所述第一无机结构层上，所述导电层位于所述绑定区的部分包括多个绑定件，所述绑定件与所述信号线对应设置且电性连接。
  13. 根据权利要求12所述的显示装置，其中，所述第二无机结构层位于所述绑定区的部分与所述第一无机结构层的接触面为粗糙面。
  14. 根据权利要求12所述的显示装置，其中，所述显示面板还包括显示区；
    所述导电结构层位于所述显示区的部分包括多个架桥，所述第二无机结构层包括依次设置的第一无机层和第二无机层，所述架桥设置于所述第一无机层与所述第二无机层之间，所述导电层位于所述显示区的部分还包括多个同层设置的第一触控电极和第二触控电极，相邻的所述第一触控电极通过所述架桥电性连接；
    所述绑定件与所述第一触控电极同层设置。
  15. 根据权利要求14所述的显示装置，其中，所述显示面板还包括依次设置于所述薄膜晶体管功能层上的有机发光器件层和封装层，所述第一无机层设置于所述封装层上。
  16. 根据权利要求12所述的显示装置，其中，所述第一无机结构层包括依次设置的衬底、缓冲层、栅极绝缘层和层间绝缘层，所述第二无机结构层位于所述绑定区的部分覆盖所述层间绝缘层。
  17. 根据权利要求16所述的显示装置，其中，所述薄膜晶体管功能层包括依次设置的有源层、栅极金属层、第一源漏金属层和第二源漏金属层，所述有源层设置于所述缓冲层上，所述栅极绝缘层设置于所述有源层上，所述栅极金属层设置于所述栅极绝缘层上，所述层间绝缘层设置于所述栅极金属层上，所述第一源漏金属层设置于所述层间绝缘层上；
    所述信号线包括依次设置在所述第一无机结构层上的第一子信号线和第二子信号线，所述第一子信号线与所述第一源漏金属层同层设置，所述第二子信号线与所述第二源漏金属层同层设置。
  18. 根据权利要求12所述的显示装置，其中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
  19. 根据权利要求18所述的显示装置，其中，所述第二无机结构层对应于所述信号线的部分上开设有过孔，所述过孔裸露出所述信号线，所述绑定件通过所述过孔与所述信号线电性连接。
  20. 根据权利要求12所述的显示装置，其中，所述驱动器件为柔性电路板。
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